semiconductor lasers

Abstract

This disclosure provides a semiconductor laser, comprising: a substrate; an epitaxial assembly disposed on the substrate and configured to generate laser light, wherein a channel is formed by etching downwards at both ends of the epitaxial assembly in a lateral direction; and a ridge waveguide assembly, comprising: two first electrode waveguides respectively disposed within the channel and forming an ohmic contact with an ohmic contact layer of the epitaxial assembly, wherein the refractive index of the first electrode waveguides is lower than the refractive index of the ohmic contact layer to limit the spread of the lateral light field and improve the confinement factor of the fundamental mode; a lower electrode disposed on the substrate on a side opposite to the epitaxial assembly; and an upper electrode disposed on the ridge waveguide assembly and forming an ohmic contact with the ohmic contact layer and the ridge waveguide assembly, adapted to cooperate with the lower electrode to form an electron injection channel.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to a wide-ridge single-sided mode anti-waveguide semiconductor laser. Background Technology

[0002] In many industrial applications of semiconductor lasers, such as communications and pumping, it is desirable for lasers to have single-mode and high brightness characteristics.

[0003] To achieve single-mode operation in a ridge waveguide semiconductor laser, both a transverse mode and a side mode are required. Since the transverse direction of a ridge waveguide semiconductor laser corresponds to the direction of its material growth, the size of its active region can be maintained in the range of a few nanometers to tens of nanometers, thus easily achieving a transverse mode. However, to achieve a single mode in the side direction, the laser stripe width is typically no more than 7 μm, resulting in a relatively small active gain region, leading to low laser output power, a small near-field in the side mode, and a often large horizontal far-field divergence angle.

[0004] Theoretically, the wide ridges formed by shallow etching can also form single-side modes. However, because the refractive index difference between the ridge and the side etched parts is too small, the light field is weakly confined, resulting in a small base-side mode confinement factor and excessive loss. As a result, the laser usually does not lases or has a high threshold current and low power. Summary of the Invention

[0005] To address at least one of the technical problems in the prior art, a semiconductor laser is provided that can improve the ability to confine the light field and reduce light field leakage.

[0006] As one aspect of this disclosure, a semiconductor laser is provided, including a substrate, an epitaxial assembly, a ridge waveguide assembly, a lower electrode, and an upper electrode. The epitaxial assembly is disposed on the substrate and configured to generate laser light, wherein a channel is formed by etching downwards at both lateral ends of the epitaxial assembly. The ridge waveguide assembly includes two first electrode waveguides, each disposed within the channel and forming an ohmic contact with an ohmic contact layer of the epitaxial assembly, wherein the refractive index of the first electrode waveguides is lower than that of the ohmic contact layer to limit the spread of the lateral optical field and improve the confinement factor of the fundamental mode. The lower electrode is disposed on the substrate on the side opposite to the epitaxial assembly. The upper electrode is disposed on the ridge waveguide assembly, forming an ohmic contact with the ohmic contact layer and the ridge waveguide assembly, and is adapted to cooperate with the lower electrode to form an electron injection channel.

[0007] According to an embodiment of this disclosure, an epitaxial component located between two first electrode waveguides is etched downward to form a trench. The ridge waveguide component further includes a second electrode waveguide disposed within the trench. The refractive index of the second electrode waveguide is lower than that of the ohmic contact layer to form an anti-waveguide structure and extend the lateral distribution of the optical field.

[0008] According to embodiments of this disclosure, at least one of the first electrode waveguide and the second electrode waveguide is an electrode material transparent to lasing wavelength, and the electrode material includes one of indium tin oxide, zinc oxide, indium oxide, tin oxide, and indium zinc oxide.

[0009] According to embodiments of this disclosure, the epitaxial assembly includes a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. The lower confinement layer is disposed on the substrate, the lower waveguide layer is disposed on the lower confinement layer, the active layer is disposed on the lower waveguide layer and is adapted to provide gain for laser generation, the upper waveguide layer is disposed on the active layer, and the upper confinement layer is adapted to cooperate with the lower confinement layer to provide lateral mode confinement for the laser, confining the laser between the upper and lower waveguide layers. The ohmic contact layer is disposed on the upper confinement layer.

[0010] According to an embodiment of this disclosure, the etching depth of the trench is less than the distance between the top surface of the epitaxial component and the bottom surface of the upper waveguide layer.

[0011] According to embodiments of this disclosure, the two first electrode waveguides and the second electrode waveguide form ohmic contacts with the upper confinement layer and the upper electrode, respectively.

[0012] According to embodiments of this disclosure, the semiconductor laser further includes an insulating layer disposed on the upper confinement layer, adapted to electrically isolate the upper confinement layer from the upper electrode.

[0013] According to embodiments of this disclosure, the distance between the opposite sides of the two first electrode waveguides ranges from 10 μm to 100 μm.

[0014] According to embodiments of this disclosure, the substrate is N-type or P-type, and the substrate material includes one of gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride.

[0015] According to embodiments of this disclosure, the active layer is a single quantum well, multiple quantum wells, or a superlattice.

[0016] According to the semiconductor laser of the present disclosure, by setting a ridge waveguide assembly, two first electrode waveguides are respectively disposed in the channel of the epitaxial assembly, and the refractive index of the first electrode waveguides is lower than the refractive index of the ohmic contact layer, the expansion of the lateral optical field is restricted, the confinement factor of the fundamental mode is improved, the ability to confine the optical field is improved, and the leakage of the optical field is reduced. Attached Figure Description

[0017] Figure 1 A schematic cross-sectional view of a semiconductor laser according to an embodiment of the present disclosure is shown;

[0018] Figure 2A The refractive index distribution of a comparative structure according to an embodiment of the present disclosure is illustrated schematically.

[0019] Figure 2B The refractive index distribution of comparative structure two according to the present disclosure is illustrated schematically;

[0020] Figure 2C A schematic diagram illustrating the refractive index distribution of comparative structure three according to an embodiment of this disclosure is shown.

[0021] Figure 3A The near field of the fundamental mode of the comparative structure one of the embodiments of this disclosure is schematically shown;

[0022] Figure 3B The near field of the fundamental mode of the comparative structure two of the present disclosure embodiments is illustrated schematically;

[0023] Figure 3C The near field of the fundamental mode of the comparative structure three of the embodiments of this disclosure is schematically shown;

[0024] Figure 4A The near field of the first-order mode of the comparative structure one of the embodiments of this disclosure is schematically shown;

[0025] Figure 4B The near field of the first-order mode of the comparative structure two in the embodiment of this disclosure is schematically shown;

[0026] Figure 4C The near field of the first-order mode of the comparative structure three in the embodiments of this disclosure is schematically shown;

[0027] Figure 5A The schematic diagram illustrates the horizontal far-field divergence angle corresponding to the fundamental mode of the comparative structure one of the embodiments of this disclosure;

[0028] Figure 5B The schematic diagram illustrates the horizontal far-field divergence angle corresponding to the fundamental mode of the comparative structure two in this embodiment of the present disclosure; and

[0029] Figure 5C The schematic diagram illustrates the horizontal far-field divergence angle corresponding to the fundamental mode of the comparative structure three in the embodiments of this disclosure.

[0030] Explanation of reference numerals in the attached figures:

[0031] 1-Substrate;

[0032] 2-Epipolar components;

[0033] 21-Ohmic contact layer;

[0034] 22-Lower constraint layer;

[0035] 23-Lower waveguide layer;

[0036] 24-Active Layer;

[0037] 25 - Upper waveguide layer;

[0038] 26 - Upper constraint layer;

[0039] 3- Ridge waveguide assembly;

[0040] 31-First electrode waveguide;

[0041] 32-Second electrode waveguide;

[0042] 4-Lower electrode;

[0043] 5-Upper electrode; and

[0044] 6-Insulation layer. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings. However, this disclosure can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. In the accompanying drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated, and the same reference numerals denote the same elements throughout.

[0046] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0047] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0048] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0049] To facilitate understanding of the technical solutions disclosed herein by those skilled in the art, the following technical terms are explained.

[0050] When using expressions such as "at least one of A, B, and C," the expression should generally be interpreted in accordance with the meaning commonly understood by a person skilled in the art (e.g., "a system having at least one of A, B, and C" should include, but is not limited to, systems having A alone, having B alone, having C alone, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.). When using expressions such as "at least one of A, B, or C," the expression should generally be interpreted in accordance with the meaning commonly understood by a person skilled in the art (e.g., "a system having at least one of A, B, or C" should include, but is not limited to, systems having A alone, having B alone, having C alone, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0051] Figure 1 A schematic cross-sectional view of a semiconductor laser according to an embodiment of the present disclosure is shown.

[0052] like Figure 1 As shown, the y-direction represents the transverse direction of the semiconductor laser provided in this disclosure, and the y-direction is also the epitaxial direction of the semiconductor laser; the x-direction represents the lateral direction of the semiconductor laser.

[0053] As one aspect of this disclosure, a semiconductor laser is provided, such as... Figure 1As shown, the device includes a substrate 1, an epitaxial assembly 2, a ridge waveguide assembly 3, a lower electrode 4, and an upper electrode 5. The epitaxial assembly 2 is disposed on the substrate 1 and configured to generate laser light. A channel is formed by etching downwards at both ends of the epitaxial assembly 2 along its sides. The ridge waveguide assembly 3 includes two first electrode waveguides 31, each disposed within the channel and forming an ohmic contact with the ohmic contact layer 21 of the epitaxial assembly 2. The refractive index of the first electrode waveguides 31 is lower than that of the ohmic contact layer 21 to limit the spread of the lateral optical field and improve the confinement factor of the fundamental mode. The lower electrode 4 is disposed on the substrate 1 on the side opposite to the epitaxial assembly 2. The upper electrode 5 is disposed on the ridge waveguide assembly 3, forming an ohmic contact with the ohmic contact layer 21 and the ridge waveguide assembly 3, and is adapted to cooperate with the lower electrode 4 to form an electron injection channel.

[0054] According to the semiconductor laser of the present disclosure, by setting the ridge waveguide assembly 3, two first electrode waveguides 31 are respectively disposed in the channel of the epitaxial assembly 2, and the refractive index of the first electrode waveguides 31 is lower than the refractive index of the ohmic contact layer 21, the expansion of the lateral (x direction) light field is restricted, the confinement factor of the fundamental mode is improved, the ability to confine the light field is improved, and the leakage of the light field is reduced.

[0055] According to an embodiment of this disclosure, substrate 1 is used to support a semiconductor laser chip and form an ohmic contact with the lower electrode 4.

[0056] According to embodiments of this disclosure, such as Figure 1 As shown, the epitaxial component 2 located between the two first electrode waveguides 31 is etched downward to form a trench. The ridge waveguide component 3 also includes a second electrode waveguide 32, which is disposed in the trench. The refractive index of the second electrode waveguide 32 is lower than that of the ohmic contact layer 21 to form an anti-waveguide structure and extend the lateral (x-direction) distribution of the light field.

[0057] According to embodiments of this disclosure, by introducing a second electrode waveguide 32 and setting the refractive index of the second electrode waveguide 32 to be lower than that of the ohmic contact layer 21, the second electrode waveguide 32 and the epitaxial component 2 located between the two first electrode waveguides 31 form an anti-waveguide structure, which can expand the lateral distribution of the optical field and thereby reduce the horizontal far-field divergence angle.

[0058] In one illustrative embodiment, the second electrode waveguide 32 is disposed at the center of the ridge waveguide assembly.

[0059] According to embodiments of this disclosure, such as Figure 1 As shown, at least one of the first electrode waveguide 31 and the second electrode waveguide 32 is an electrode material that is transparent to the lasing wavelength, and the electrode material includes one of indium tin oxide, zinc oxide, indium oxide, tin oxide and indium zinc oxide.

[0060] According to embodiments of this disclosure, the transparent electrode material possesses excellent conductivity and high transmittance for visible and near-infrared light. Compared to conventional low-refractive-index materials such as silicon dioxide and silver, it neither reduces the area of ​​the active region 24 nor causes high absorption loss. This ensures stable single-side-mode operation of the semiconductor laser while maintaining a large waveguide width. The wide waveguide ensures sufficient gain area for the semiconductor laser, thereby achieving higher output power. Furthermore, a wide waveguide typically corresponds to a narrow horizontal divergence angle. Therefore, the semiconductor laser provided by this disclosure can achieve high-power, single-side-mode, narrow horizontal divergence angle, and high-brightness semiconductor laser output.

[0061] According to embodiments of this disclosure, such as Figure 1 As shown, the epitaxial component 2 includes a lower confinement layer 22, a lower waveguide layer 23, an active layer 24, an upper waveguide layer 25, and an upper confinement layer 26. The lower confinement layer 22 is disposed on the substrate 1, the lower waveguide layer 23 is disposed on the lower confinement layer 22, the active layer 24 is disposed on the lower waveguide layer 23 and is suitable for providing gain to generate laser light, the upper waveguide layer 25 is disposed on the active layer 24, and the upper confinement layer 26 is suitable for cooperating with the lower confinement layer 22 to provide transverse (y-direction) mode confinement for the laser light, confining the laser light between the upper waveguide layer 25 and the lower waveguide layer 23. An ohmic contact layer 21 is disposed on the upper confinement layer 26.

[0062] According to embodiments of this disclosure, the upper confinement layer 26 and the lower confinement layer 22 cooperate to provide confinement of the longitudinal and transverse modes of the semiconductor laser, thereby enabling the output of the fundamental transverse mode in the longitudinal and transverse (y-direction) directions of the semiconductor laser.

[0063] According to embodiments of this disclosure, a high-refractive-index waveguide (with a refractive index higher than that of the first electrode waveguide 31 and the second electrode waveguide 32) formed by an ohmic contact layer 21 and a portion of an upper confinement layer 26 located between the two first electrode waveguides 31 is used to form the main local confinement of the optical field.

[0064] According to an embodiment of this disclosure, the etching depth of the trench is less than the distance between the top surface of the epitaxial component 2 and the bottom surface of the upper waveguide layer 25.

[0065] In one illustrative embodiment, such as Figure 1 As shown, the trench is etched into part of the upper confinement layer 26.

[0066] According to embodiments of this disclosure, such as Figure 1 As shown, the two first electrode waveguides 31 and the second electrode waveguide 32 form ohmic contacts with the upper confinement layer 26 and the upper electrode 5, respectively.

[0067] According to embodiments of this disclosure, such as Figure 1As shown, the semiconductor laser also includes an insulating layer 6 disposed on the upper limiting layer 26, which is suitable for electrically isolating the upper limiting layer 26 from the upper electrode 5.

[0068] According to embodiments of this disclosure, the insulating layer 6 is disposed between the upper confinement layer 26 and the partial ohmic contact layer 21 and the upper electrode 5, and can be used for electrical isolation to limit the injection area of ​​electrons.

[0069] According to embodiments of this disclosure, the distance between the opposite sides of the two first electrode waveguides 31, that is, the total width of the ridge region, ranges from 10 μm to 100 μm.

[0070] In one illustrative embodiment, the total width of the ridge waveguide assembly 3 can be 10 μm, 15 μm, 20 μm, 50 μm, 80 μm, or 100 μm.

[0071] According to embodiments of this disclosure, substrate 1 is N-type or P-type, and the material of substrate 1 includes, but is not limited to, gallium arsenide (GaAs), indium phosphide (InP), gallium antimonide (GaSb), and gallium nitride (GaN).

[0072] According to embodiments of the invention, the active region 24 of the semiconductor laser can be a single quantum well, multiple quantum wells, or a superlattice, and the materials include, but are not limited to, GaAs, InGaAs, InGaAsP, AlGaInP, AlGaAsP, and AlGaN.

[0073] Figure 2A The refractive index distribution of a comparative structure according to an embodiment of this disclosure is schematically shown. Figure 2B The refractive index distribution of comparative structure two according to an embodiment of this disclosure is schematically shown. Figure 2C The refractive index distribution of comparative structure three according to the present disclosure is illustrated schematically.

[0074] like Figures 2A to 2C As shown, the horizontal axis represents the spatial position of the semiconductor laser in the lateral direction x, with units of μm, and the vertical axis represents the spatial position of the semiconductor laser in the epitaxial direction y, with units of μm. The chromaticity in the figure represents the magnitude of the refractive index.

[0075] In one illustrative embodiment, three semiconductor lasers are provided, each with a lasing wavelength of 960 nm. For example... Figures 2A to 2C As shown, the semiconductor lasers include:

[0076] Substrate 1 has a thickness of 0.5 μm and a refractive index of 3.5063;

[0077] The lower confinement layer 22 has a thickness of 2 μm and a refractive index of 3.3837;

[0078] The lower waveguide layer 23 has a thickness of 0.75 μm and a refractive index of 3.4315;

[0079] The active region 24 has a thickness of 0.027 μm and a refractive index of 3.6248.

[0080] The upper waveguide layer 25 has a thickness of 0.45 μm and a refractive index of 3.4315;

[0081] The upper confinement layer 26 has a thickness of 0.8 μm and a refractive index of 3.2131; and

[0082] The ohmic contact layer 21 has a thickness of 0.15 μm and a refractive index of 3.5063.

[0083] Figure 2A The width of the ridge region (the portion of the epitaxial component located between the channels) is 25 μm, and the ridge height is 0.75 μm. Figure 2B and Figure 2C The width of the ridge region (the portion of the epitaxial component located between the channels and the ridge waveguide component 3) is 25 μm, and the ridge height is 0.75 μm. Figure 2B The two first electrode waveguides 31 have a width of 4 μm, a height of 0.85 μm, and a refractive index of 1.6655. Figure 2C The ridge waveguide assembly 3 is in Figure 2B A second electrode waveguide 32 is added to the basic structure. The second electrode waveguide 32 is located at the center of the ridge waveguide assembly 3, with a width of 4 μm, a height of 0.75 μm, and a refractive index of 1.6655.

[0084] According to an embodiment of this disclosure, as shown in the figure Figures 2A to 2C As shown, the active region 24 has the highest refractive index.

[0085] Figure 3A The near field of the fundamental mode of the comparative structure 1 according to an embodiment of this disclosure is schematically shown. Figure 3B The near field of the fundamental mode of the comparative structure two of the embodiments of this disclosure is schematically shown. Figure 3C The near field of the fundamental mode of the comparative structure three of the present disclosure embodiments is schematically shown.

[0086] like Figures 3A-3C As shown in the figure, the horizontal axis represents the spatial position of the semiconductor laser in the lateral direction x, the vertical axis represents the spatial position of the semiconductor laser in the epitaxial direction y, the chromaticity in the figure represents the magnitude of the mode field intensity, and the value of the fundamental mode confinement factor Γ0 for each structure is given in the upper left corner.

[0087] Figures 3A-3CIn the comparison, the constraint factors for Comparative Structure 1, Comparative Structure 2, and Comparative Structure 3 are 0.759%, 0.815%, and 0.784%, respectively. It can be seen that Comparative Structure 1 has the smallest fundamental mode constraint factor.

[0088] like Figure 3A As shown, a significant leakage light field can be observed on the outer side of the ridge; as Figure 3B As shown, the introduction of the two first electrode waveguides 31 effectively suppresses fundamental mode leakage and improves the fundamental mode confinement factor; Figure 3C As shown, the introduction of the second electrode waveguide 32 reduces the fundamental mode confinement factor, but the leakage of the fundamental mode field is still greatly improved compared with the first comparative structure.

[0089] Figure 4A The near field of the first-order mode of the comparative structure one of the embodiments of this disclosure is schematically shown. Figure 4B The near field of the first-order mode of the comparative structure two in the embodiment of this disclosure is schematically shown. Figure 4C The near field of the first-order mode of the comparative structure three of the present disclosure is illustrated schematically.

[0090] like Figures 4A-4C As shown in the figure, the horizontal axis represents the spatial position of the semiconductor laser in the lateral direction x, the vertical axis represents the spatial position of the semiconductor laser in the epitaxial direction y, the chromaticity in the figure represents the magnitude of the mode field intensity, and the value of the first-order mode confinement factor Γ1 for each structure is given in the upper left corner. Here, the first-order mode mainly refers to the first-order side mode.

[0091] Figures 4A-4C In the comparison, the first-order mode confinement factors of comparative structure one, comparative structure two, and the semiconductor laser provided in this embodiment are 0.456%, 0.066%, and 0.065%, respectively. It can be seen that the first-order mode confinement factor of comparative structure one is the largest, with a confinement factor ratio of 1.66 to its fundamental mode, which is less than 2. Therefore, this structure will exhibit multi-mode lasing during operation. After introducing two first electrode waveguides 31, the first-order mode confinement factor of comparative structure two is very small, with most of the mode field distributed outside the ridge waveguide. The confinement factor ratio to the fundamental mode is 12.34. Therefore, comparative structure two can ensure good single-mode characteristics during operation. After introducing the second electrode waveguide 32, the first-order mode of comparative structure three does not change significantly compared to comparative structure two. Its confinement factor is also very small, with a confinement factor ratio to the fundamental mode of 12.06. It can also ensure stable single-mode output.

[0092] Figure 5A The schematic diagram illustrates the horizontal far-field divergence angle corresponding to the fundamental mode of the comparative structure one of the embodiments of this disclosure. Figure 5B The schematic diagram illustrates the horizontal far-field divergence angle corresponding to the fundamental mode of the comparative structure two in this embodiment of the present disclosure. Figure 5CThe schematic diagram illustrates the horizontal far-field divergence angle corresponding to the fundamental mode of the comparative structure three in the embodiments of this disclosure.

[0093] like Figures 5A-5C As shown in the figure, the horizontal axis represents angle in degrees, and the vertical axis represents the relative intensity of the far-field distribution in units of 1. The figure also shows the full width at half maximum (FWHM). x The divergence angle at ) and 95% energy (FWHM) 95% The size of the divergence angle at point ().

[0094] Figures 5A-5C In the comparison, the horizontal far-field divergence angles of the fundamental mode of the semiconductor lasers provided in Comparative Structure 1, Comparative Structure 2, and the embodiments of this disclosure are 1.32°, 1.55°, and 1.29°, respectively. It can be seen that introducing two first electrode waveguides 31 into Comparative Structure 1 increases the horizontal far-field divergence angle, while introducing a second electrode waveguide 32 into Comparative Structure 2 reduces the horizontal far-field divergence angle, even lower than that of Comparative Structure 1.

[0095] Therefore, it can be seen that in the above illustrative embodiments, the second comparative structure, formed by introducing two first electrode waveguides 31 on the basis of the first comparative structure, has a very high fundamental mode confinement factor and a very high confinement factor ratio, which can ensure that the wide-ridge semiconductor laser has high-power, single-side-mode laser output. The third comparative structure, formed by introducing a second electrode waveguide 32 on the basis of the second comparative structure, has a high fundamental mode confinement factor and a high confinement factor ratio, while also having the smallest horizontal far-field divergence angle among the three structures. Therefore, the semiconductor laser provided in this embodiment can provide high-power, stable single-side-mode, narrow horizontal divergence angle, and high-brightness laser output.

[0096] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding this disclosure, and the shapes and dimensions of the components in the drawings do not reflect actual size and proportion, but are only schematic representations of the embodiments of this disclosure.

[0097] Unless otherwise stated, the numerical parameters in this specification and the appended claims are approximate values ​​and can be varied according to desired characteristics derived from the content of this disclosure. Specifically, all figures used in the specification and claims to indicate composition, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. Generally, this means that a specific amount may vary by ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments.

[0098] The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify the corresponding elements does not imply that the element has any ordinal number, nor does it represent the order of one element with another element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a named element to be clearly distinguished from another element with the same name.

[0099] Furthermore, unless specifically described or required to occur in a specific order, the order of the above steps is not limited to those listed above and can be varied or rearranged according to the desired design. Moreover, the above embodiments can be used in combination with each other or with other embodiments based on design and reliability considerations; that is, technical features from different embodiments can be freely combined to form more embodiments.

[0100] The specific embodiments described above further illustrate the purpose, technical solutions, and beneficial effects of this disclosure. It should be understood that the above descriptions are merely specific embodiments of this disclosure and are not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A semiconductor laser, characterized in that, include: Substrate (1); An epitaxial component (2) is disposed on the substrate (1) and configured to generate laser light, wherein a channel is formed by etching downward along both ends of the epitaxial component in the lateral direction; Ridge waveguide assembly (3), comprising: Two first electrode waveguides (31) are respectively disposed in the channel and form an ohmic contact with the ohmic contact layer (21) of the epitaxial component (2), wherein the refractive index of the first electrode waveguide (31) is lower than the refractive index of the ohmic contact layer (21) to limit the spread of the lateral optical field and improve the confinement factor of the fundamental mode. The lower electrode (4) is disposed on the side of the substrate (1) opposite to the epitaxial assembly (2); and The upper electrode (5) is disposed on the ridge waveguide assembly (3) and forms an ohmic contact with the ohmic contact layer (21) and the ridge waveguide assembly (3), and is suitable for cooperating with the lower electrode (4) to form an electron injection channel; An epitaxial assembly located between the two first electrode waveguides (31) is etched downward to form a trench, and the ridge waveguide assembly (3) further includes: The second electrode waveguide (32) is disposed in the trench. The refractive index of the second electrode waveguide (32) is lower than that of the ohmic contact layer (21) to form an anti-waveguide structure and extend the lateral distribution of the optical field.

2. The semiconductor laser according to claim 1, characterized in that, At least one of the first electrode waveguide (31) and the second electrode waveguide (32) is an electrode material that is transparent to the lasing wavelength, and the electrode material includes one of indium tin oxide, zinc oxide, indium oxide, tin oxide and indium zinc oxide.

3. The semiconductor laser according to claim 1, characterized in that, The epitaxial component (2) includes: A lower limiting layer (22) is disposed on the substrate (1); The lower waveguide layer (23) is disposed on the lower confinement layer (22); An active layer (24) is disposed on the lower waveguide layer (23) and is suitable for providing gain to generate laser light; The upper waveguide layer (25) is disposed on the active layer (24); and The upper confinement layer (26) is adapted to cooperate with the lower confinement layer (22) to provide lateral mode confinement for the laser, confining the laser between the upper waveguide layer (25) and the lower waveguide layer (23); The ohmic contact layer (21) is disposed on the upper limiting layer (26).

4. The semiconductor laser according to claim 3, characterized in that, The etching depth of the trench is less than the distance between the top surface of the epitaxial component and the bottom surface of the upper waveguide layer (25).

5. The semiconductor laser according to claim 3, characterized in that, The two first electrode waveguides (31) and the second electrode waveguide (32) form ohmic contacts with the upper confinement layer (26) and the upper electrode (5), respectively.

6. The semiconductor laser according to claim 3, characterized in that, Also includes: An insulating layer (6) is disposed on the upper limiting layer (26) and is adapted to electrically isolate the upper limiting layer (26) from the upper electrode (5).

7. The semiconductor laser according to claim 1, characterized in that, The distance between the two opposite sides of the first electrode waveguides (31) ranges from 10 μm to 100 μm.

8. The semiconductor laser according to claim 1, characterized in that, The substrate (1) is N-type or P-type, and the material of the substrate (1) includes gallium arsenide, indium phosphide, gallium antimonide and gallium nitride.

9. The semiconductor laser according to claim 3, characterized in that, The active layer (24) is a single quantum well, multiple quantum wells, or a superlattice.

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