A gas supply device, a gas supply method and a processing device thereof for a deposition process

Abstract

The present invention discloses a gas supply device, a gas supply method and a processing device thereof for a deposition process. The gas supply device includes: a carrier gas source, which is connected to a precursor source through a pipeline and is used to send the precursor source into a reaction chamber so that the precursor source is deposited on the surface of a wafer; and a first gas switching device, whose input end is connected to a reaction gas source and a first protective gas source, and whose output end is connected to the reaction chamber. Wherein, when the precursor source is deposited on the surface of the wafer, the first gas switching device passes a first protective gas into the reaction chamber, and after the deposition operation of the precursor source on the surface of the wafer is completed, it switches the reaction gas source and the first protective gas source and passes a reaction gas into the reaction chamber to perform subsequent steps of the deposition process. Through the above gas supply device, not only can the reverse flow situation occurring instantaneously during gas switching be avoided, but also the partial pressure of the precursor source can be increased in the deposition process, thereby increasing the deposition rate of the precursor source and improving the process productivity of the entire deposition process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and specifically relates to a gas supply device for a deposition process, a gas supply method for a deposition process, a processing device for a deposition process, and a computer-readable storage medium. Background Art

[0002] The semiconductor manufacturing process can include thin film deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD), etc., to form various thin films on a wafer or a substrate to fabricate semiconductor devices.

[0003] In the prior art, when performing a thin film deposition process by ALD technology, during the entire deposition process, including the reaction gas being constantly in a flowing state, this results in a very small partial pressure of the carrier gas carrying the precursor source in the reaction chamber at the first step of the deposition process, thus affecting the deposition rate of the precursor source on the wafer surface. Moreover, the reaction gas introduced during the deposition of the precursor source also affects the quality of the deposited precursor source thin film.

[0004] In order to solve the above problems existing in the prior art, there is an urgent need in the art for a gas supply technology for a deposition process, which can not only avoid the reverse flow situation during the instant of gas switching, but also increase the partial pressure of the precursor source in the deposition process, thereby increasing the deposition rate of the precursor source and improving the process productivity of the entire deposition process. Summary of the Invention

[0005] A brief overview of one or more aspects is given below to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to a more detailed description given later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a gas supply device for a deposition process, a gas supply method for a deposition process, a processing device for a deposition process, and a computer-readable storage medium, which can not only avoid the reverse flow situation during the instant of gas switching, but also increase the partial pressure of the precursor source in the deposition process, thereby increasing the deposition rate of the precursor source and improving the process productivity of the entire deposition process.

[0007] Specifically, the gas supply device for the deposition process provided by the first aspect of the present invention includes: a carrier gas source connected to the precursor source through a pipeline for sending the precursor source into the reaction chamber so that the precursor source is deposited on the surface of the wafer; and a first gas switching device, whose input end is connected to the reaction gas source and the first protective gas source, and the output end is connected to the reaction chamber. When the precursor source is deposited on the surface of the wafer, the first protective gas is introduced into the reaction chamber by the first gas switching device, and after the deposition operation of the precursor source on the surface of the wafer is completed, the reaction gas source and the first protective gas source are switched, and the reaction gas is introduced into the reaction chamber to perform the subsequent steps of the deposition process.

[0008] Further, in some embodiments of the present invention, the flow rate of the introduced first protective gas is less than the flow rate of the introduced reaction gas.

[0009] Further, in some embodiments of the present invention, the first protective gas includes any one of inert gases such as argon, nitrogen, and helium.

[0010] Further, in some embodiments of the present invention, it further includes: a mass flow controller located between the carrier gas source and the precursor source for controlling the flow rate of the carrier gas introduced into the reaction chamber.

[0011] Further, in some embodiments of the present invention, it further includes: a second gas switching device disposed at the front end of the precursor source, whose input end is connected to the carrier gas source and the second protective gas source, and the output end leads to the reaction chamber, for switching the carrier gas source and the second protective gas source after the deposition operation of the precursor source on the surface of the wafer is completed, and introducing the second protective gas to purge the rear end of the precursor source.

[0012] Further, in some embodiments of the present invention, the second protective gas and the carrier gas are the same gas.

[0013] Further, in some embodiments of the present invention, the flow rate of the introduced second protective gas is greater than the flow rate of the carrier gas.

[0014] In addition, the gas supply method for the deposition process provided by the second aspect of the present invention includes the following steps: when introducing the precursor source into the reaction chamber, introducing the first protective gas simultaneously so that the precursor source performs a deposition operation on the surface of the wafer; and in response to the completion of the deposition operation of the precursor source on the surface of the wafer, switching the reaction gas source and the first protective gas source, and introducing the reaction gas into the reaction chamber to perform the subsequent steps of the deposition process.

[0015] Further, in some embodiments of the present invention, the step of continuously introducing the reaction gas into the reaction chamber in response to the completion of the deposition operation of the precursor source on the wafer surface to perform other steps of the deposition process includes: after the deposition operation of the precursor source is completed on the wafer surface, switching the carrier gas source and the second protective gas source, and introducing the second protective gas to purge the rear end of the precursor source.

[0016] In addition, the processing apparatus for the deposition process provided in the third aspect of the present invention includes: a reaction chamber for performing the deposition process; a memory; and a processor, the processor being connected to the memory and configured to implement the gas supply method for the deposition process provided in the second aspect of the present invention.

[0017] In addition, a computer-readable storage medium is further provided according to the fourth aspect of the present invention, on which computer instructions are stored. When the computer instructions are executed by a processor, the gas supply method for the deposition process provided in the second aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components having similar relevant characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 FIG. shows a schematic structural diagram of a gas supply device for a deposition process provided according to some embodiments of the present invention;

[0020] Figure 2 FIG. shows a schematic structural diagram of a gas supply device for a deposition process provided according to some other embodiments of the present invention;

[0021] Figure 3 FIG. shows a flowchart of a gas supply method for a deposition process provided according to some embodiments of the present invention; and

[0022] Figure 4 FIG. shows a structural block diagram of a gas supply device for a deposition process provided according to some embodiments of the present invention.

[0023] REFERENCE NUMERALS:

[0024] 100, 200 Gas supply devices for the deposition process;

[0025] 110 Carrier gas source;

[0026] 111 Mass flow controller;

[0027] 120 Precursor source;

[0028] Valves 121, 122, 123;

[0029] Reaction chamber 130;

[0030] First gas switching device 140;

[0031] Reaction gas source 150;

[0032] First protective gas source 160;

[0033] Air pumps 170, 171;

[0034] Second protective gas source 180;

[0035] Second gas switching device 210;

[0036] Steps S310 - S330;

[0037] Gas supply device for deposition process 400;

[0038] Memory 410; and

[0039] Processor 420. Detailed implementation manners

[0040] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0041] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0042] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the relevant drawings. Such relative terms are only for convenience of description and do not represent that the devices described need to be manufactured or operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0043] It is understood that although terms such as "first", "second", "third", etc. may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0044] As described above, in the prior art, during the thin film deposition process by ALD technology, throughout the deposition process, including the reaction gas being in a continuously introduced state, this results in a very small partial pressure of the carrier gas carrying the precursor source in the reaction chamber at the first step of the deposition process, thus affecting the deposition rate of the precursor source on the wafer surface. Moreover, the reaction gas introduced during the deposition process of the precursor source also affects the quality of the deposited precursor source film.

[0045] To solve the above problems existing in the prior art, the present invention provides a gas supply device for a deposition process, a gas supply method for a deposition process, a processing device for a deposition process, and a computer-readable storage medium, which can not only avoid the reverse flow situation during the instant of gas switching, but also increase the partial pressure of the precursor source during the deposition process, thereby increasing the deposition rate of the precursor source and improving the process productivity of the entire deposition process.

[0046] In some non-limiting embodiments, the above-mentioned gas supply device for the deposition process provided by the first aspect of the present invention can be used to implement the above-mentioned gas supply method for the deposition process provided by the second aspect of the present invention.

[0047] The working principle of the above-mentioned gas supply device for the deposition process will be described below in combination with some embodiments of the gas supply method for the deposition process. Those skilled in the art can understand that these embodiments of the gas supply method for the deposition process are only some non-limiting implementation manners provided by the present invention, aiming to clearly show the main concept of the present invention and provide some specific solutions convenient for the public to implement, rather than limiting all working modes or all functions of the gas supply device for the deposition process. Similarly, the gas supply device for the deposition process is also only a non-limiting implementation manner provided by the present invention and does not limit the implementation subject of each step in these gas supply methods for the deposition process.

[0048] First, please refer to Figure 1 , Figure 1 which shows a schematic structural diagram of a gas supply device for a deposition process provided according to some embodiments of the present invention.

[0049] As Figure 1 shown, in some embodiments of the present invention, the gas supply device 100 for the deposition process may include a carrier gas source 110 and a first gas switching device 140. Specifically, the carrier gas source 110 may be connected to the precursor source 120 through a pipeline to send the precursor source into the reaction chamber 130, so that the precursor source is deposited on the surface of the wafer in the reaction chamber 130. The input end of the first gas switching device 140 may be connected to the reaction gas source 150 and the first protective gas source 160, and its output end may be connected to the reaction chamber 130.

[0050] The working process of the first gas switching device 140 may include that during the process of the precursor source being carried into the reaction chamber 130 by the carrier gas and the deposition reaction of the precursor source on the surface of the wafer, the first gas switching device 140 may switch to the first protective gas source 160 to simultaneously introduce the first protective gas into the reaction chamber 130 to completely isolate the reaction gas. Since the pressure in the gas supply device 100 for the deposition process, especially in the reaction chamber 130, is kept constant, when the reaction gas is cut off and the total gas flow rate decreases, the pressure of the remaining gas, for example, the carrier gas carrying the precursor source, can be increased to balance the pressure, thereby increasing the deposition rate of the precursor source in the reaction chamber 130 and making the deposition reaction more complete.

[0051] And when the deposition operation of the precursor source on the surface of the wafer in the reaction chamber 130 is completed, the first gas switching device 140 may switch the reaction gas source 150 and the first protective gas source 160, that is, it may switch to the reaction gas source 150 to introduce the reaction gas into the reaction chamber 130 to perform the subsequent steps of the deposition process. Continuously introducing the first protective gas can avoid the problem that when a vacuum region is formed in the equipment pipeline for a moment during the gas switching, the air pressure in some pipelines flows back to the vacuum region, resulting in a counterflow with the switched gas. It can be understood that continuously introducing the first protective gas can prevent the formation of a reverse flow vacuum region in the equipment pipeline.

[0052] Furthermore, in some preferred embodiments, the flow rate of the first protective gas introduced may be less than the flow rate of the reaction gas introduced. By setting a smaller flow rate of the first protective gas introduced, the pressure of the carrier gas carrying the precursor source can be further increased, which is beneficial to accelerating the deposition rate of the precursor source.

[0053] In some alternative embodiments, different gases may be selected for the reaction gas and the first protective gas. For example, the reaction gas may be oxygen, and the first protective gas may include, but is not limited to, any one of inert gases such as argon, nitrogen, and helium. As long as the first protective gas does not participate in the deposition reaction, it is acceptable.

[0054] For example, in some non-limiting embodiments of the present invention, the deposition reaction may include an ALD cyclic deposition reaction, that is, a reaction in which a material is deposited layer by layer on the surface of a substrate in the form of a single atomic film based on chemical vapor. The precursor source may be a silicon (Si) source, and the reaction gas may be oxygen. During the ALD cyclic deposition reaction, first, the silicon source is introduced into the wafer in the reaction chamber 130, and a deposition reaction occurs on the surface of the wafer to form a silicon film. In the present invention, in this step, the first gas switching device 140 is switched to the first protective gas source 160, so that the carrier gas carrying the silicon source is introduced into the reaction chamber 130 in an oxygen-isolated manner under the shielding protection of the first protective gas, so as to accelerate the rate of the deposition reaction between the silicon source and the surface of the wafer and quickly form a silicon film. Then, the gas supply device 100 for the deposition process and the remaining gas in the reaction chamber 130 are flushed with an inert gas to prevent excess silicon source from depositing on other places such as the inner wall of the pipeline of the device. After that, oxygen can be introduced into the reaction chamber 130, and through radio frequency (RF) reaction in the reaction chamber 130, an oxygen film is deposited on the silicon film on the surface of the wafer. Finally, the excess gas is flushed away by an inert gas, thus completing one atomic layer deposition (ALD) cycle. Further, due to the increased deposition rate, the number of cycles required to deposit to the corresponding film thickness can be reduced, so the total cycle time of the entire ALD cyclic deposition will also be correspondingly reduced.

[0055] In addition, as Figure 1 shown, in some preferred embodiments, the output end of the first gas switching device 140 may also be connected to a gas pump 170. During the process of switching between the first protective gas source 160 and the reaction gas source 150 by the first gas switching device 140, pumping can also be performed through the gas pump 170, so as to further avoid the problem that when a vacuum area appears in the equipment pipeline for a moment during the gas switching, the air pressure in some pipelines flows back to the vacuum area, resulting in a counterflow with the switched gas.

[0056] Further, as Figure 1As described above, the gas supply device 100 of the deposition process may further include a Mass Flow Controller (MFC) 111. The mass flow controller 111 may be disposed between the carrier gas source 110 and the precursor source 120 to control the flow rate of the carrier gas introduced into the reaction chamber 130. Specifically, when the valves 121 and 122 are in the open state and the valve 123 is in the closed state, the mass flow controller 111 may reduce the flow rate of the carrier gas so that the carrier gas is introduced into the precursor source 120 at a relatively stable rate and carries the precursor source smoothly into the reaction chamber 130, thereby performing a stable deposition reaction. When the valves 121 and 122 are in the closed state and the valve 123 is in the open state, the mass flow controller 111 may increase the flow rate of the carrier gas so that the carrier gas flows rapidly through the rear end of the precursor source 120, including the pipeline and the reaction chamber 130, to perform a rapid purging operation and improve the purging efficiency.

[0057] Next, please refer to Figure 2 , Figure 2 which shows a schematic structural diagram of a gas supply device for a deposition process provided according to some other embodiments of the present invention.

[0058] As Figure 2 shown, in some other embodiments of the present invention, the gas supply device 200 of the deposition process and the gas supply device 100 of the deposition process in the above embodiments have mostly the same structure, and the component structures of the same parts will not be described again

[0059] The gas supply device 200 of the deposition process may further include a second gas switching device 210. The second gas switching device 210 may be disposed at the front end of the precursor source 120, and its input end may be connected to the carrier gas source 110 and the second protective gas source 180, and the output end may lead to the reaction chamber 130. After the deposition operation of the precursor source is completed on the surface of the wafer in the reaction chamber 130, the second gas switching device 210 may switch the carrier gas source 110 and the second protective gas source 180, that is, switch to the second protective gas source 180, and introduce the second protective gas to purge the rear end of the precursor source 120.

[0060] Specifically, after the deposition operation of the precursor source is completed on the surface of the wafer in the reaction chamber 130, the valves 121 and 122 may be closed, the valve 123 may be opened, and the second gas switching device 210 may be switched to the second protective gas source 180, so as to ensure that the second protective gas for purging introduced into the gas supply device 200 of the deposition process has not contacted the precursor source and the second protective gas is completely clean, thereby improving the cleanliness of the purging. After the purging step in the ALD cycle reaction process is completed, the second gas switching device 210 may be switched back to the carrier gas source 110 to continue to carry the precursor source into the reaction chamber 130.

[0061] In the prior art, in the traditional ALD cycle deposition reaction, it is still common to use a carrier gas as a purge gas to purge the inside of the equipment. Since the opening and closing of valves 121, 122, and 123 are controlled by a controller, there is inevitably a certain delay in the control signal, so the cleanliness of the carrier gas used for purging cannot be guaranteed. If the carrier gas is mixed with a precursor source, then during the process of purging the equipment with the carrier gas, the precursor source mixed in the carrier gas may still deposit on places such as the inner wall of the pipeline, causing problems such as pipeline blockage and equipment failure.

[0062] Furthermore, in some embodiments of the present invention, the second protective gas and the carrier gas are the same gas. By providing two input pipelines, namely the carrier gas source 110 and the second protective gas source 180, the carrier gas can maintain a constant flow rate in the gas supply device 200 of the deposition process, which is beneficial to the stability of the reaction conditions. Moreover, the flow rate of the second protective gas introduced can be greater than the flow rate of the carrier gas introduced. In this embodiment, during the purging stage, a large flow rate of the second protective gas is used for purging, which can improve the purging efficiency. Correspondingly, the purging time can be shortened, and the purging time within a single cycle is correspondingly reduced. Therefore, the total cycle time of the entire ALD cycle deposition will also be reduced.

[0063] Optionally, as Figure 2 shown, in some preferred embodiments, the output end of the second gas switching device 210 can also be connected to a gas pump 171. During the process of switching between the carrier gas source 110 and the second protective gas source 180 by the second gas switching device 210, the gas pump 171 can also be used for pumping air, so as to further avoid the problem that when a vacuum region appears in the equipment pipeline for a moment during the gas switching process, the air pressure in some pipelines flows back towards the vacuum region, resulting in a counterflow with the switched gas.

[0064] Next, please refer to Figure 3 , Figure 3 which shows a flowchart of a gas supply method for a deposition process according to some embodiments of the present invention.

[0065] As Figure 3 shown, in some embodiments of the present invention, the gas supply method for the deposition process may include the following step S310: When introducing a precursor source into the reaction chamber, a first protective gas is introduced simultaneously, so that the precursor source performs a deposition operation on the surface of the wafer.

[0066] Specifically, it can be combined with Figure 1Referring together, in some alternative embodiments, the deposition reaction may include an ALD cycle deposition reaction. The precursor source may be a silicon (Si) source, and the reaction gas may be oxygen. During the ALD cycle deposition reaction, a carrier gas may first be introduced into the precursor source 120 to carry the silicon source into the wafer in the reaction chamber 130, where a deposition reaction occurs on the wafer surface to form a silicon film. In this step, the first gas switching device 140 is switched to the first protective gas source 160, so that the carrier gas carrying the silicon source can be introduced into the reaction chamber 130 under the shielding protection of the first protective gas, isolating oxygen, to accelerate the rate of the deposition reaction between the silicon source and the wafer surface and quickly form a silicon film. Since the gas supply device 100 for the deposition process, especially in the reaction chamber 130, maintains a constant pressure, when the reaction gas is cut off and the total gas flow rate decreases, the partial pressure of the remaining gas, such as the carrier gas carrying the precursor source, can be increased to balance the pressure, increasing the partial pressure of the precursor source (silicon source) in the reaction chamber 130, enhancing the deposition rate of the precursor source, and enabling the deposition reaction to be more complete.

[0067] Moreover, in this step, continuously introducing the first protective gas can prevent the problem that when a vacuum region is formed in the equipment pipeline for an instant during gas switching, the air pressure in some pipelines flows back to the vacuum region, resulting in a counterflow with the switched gas. It can be understood that continuously introducing the first protective gas can prevent the formation of a reverse-flow vacuum region in the equipment pipeline.

[0068] Continuing as Figure 3 shown, the gas supply method for the deposition process provided by the present invention may further include step S320: in response to the completion of the deposition operation of the precursor source on the wafer surface, switching the reaction gas source and the first protective gas source, and introducing the reaction gas into the reaction chamber to perform the subsequent steps of the deposition process.

[0069] Specifically, continuing to refer together Figure 1 Referring together, in the above embodiment of the ALD cycle deposition reaction, after the deposition operation of the silicon source on the wafer surface in the reaction chamber 130 is completed, the first gas switching device 140 can switch the reaction gas source 150 and the first protective gas source 160, that is, it can be switched to the reaction gas source 150, and the reaction gas is introduced into the reaction chamber 130 to perform the subsequent steps of the deposition process. The subsequent steps may include purging the precursor source (silicon source), radio-frequency depositing an oxygen film, and purging the remaining reactants.

[0070] Furthermore, as Figure 2As shown, in some preferred embodiments, the gas supply device 200 of the deposition process may further include a second gas switching device 210. After the deposition operation of the silicon source is completed on the wafer surface, the carrier gas source and the second protective gas source can be switched through the second gas switching device 210, that is, switched to the second protective gas source 180, and the second protective gas is introduced to purge the rear end of the precursor source 120 to perform the purging work of the precursor source (silicon source), so as to avoid the deposition of excess silicon source on other places such as the inner wall of the equipment pipeline.

[0071] Specifically, after the deposition operation of the precursor source is completed on the wafer surface in the reaction chamber 130, the valves 121 and 122 can be closed, the valve 123 can be opened, and the second gas switching device 210 can be switched to the second protective gas source 180, so as to ensure that the second protective gas for purging work introduced into the gas supply device 200 of the deposition process has not contacted the precursor source and the second protective gas is completely clean, thereby improving the cleanliness of the purging. After completing the purging step in the ALD cycle reaction process, the second gas switching device 210 can be switched back to the carrier gas source 110 to continue to carry the precursor source into the reaction chamber 130.

[0072] After that, the carrier gas and the reaction gas oxygen can be normally introduced into the reaction chamber 130, and through radio frequency (RF) reaction in the reaction chamber 130, an oxygen film is deposited on the upper layer of the silicon film on the wafer surface. Finally, the excess gas is flushed away by the carrier gas (inert gas), thus completing one atomic layer deposition (ALD) cycle. Since the deposition rate increases, the number of cycles required to deposit to the corresponding film thickness decreases, so the total cycle time of the entire ALD cycle deposition will also be correspondingly reduced.

[0073] Those skilled in the art can understand that the above solution using the silicon source as the precursor source and oxygen as the reaction gas is only a non-restrictive implementation manner provided by the present invention, aiming to clearly show the main concept of the present invention and provide a specific solution convenient for the public to implement, rather than limiting the protection scope of the present invention. Optionally, in some other embodiments, those skilled in the art can also adopt other precursor sources, reaction gases and / or carrier gases and / or purge gases based on the concept of the present invention to deposit different thin films to achieve the same technical effects.

[0074] Although the above methods are illustrated and described as a series of actions to simplify the explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or occur concurrently with other actions shown and described herein or not shown and described herein but understood by those skilled in the art.

[0075] So far, the gas supply device for the deposition process provided in the first aspect of the present invention and the gas supply method for the deposition process provided in the second aspect have been introduced. In addition, the gas supply method for the deposition process provided in the second aspect of the present invention can be implemented by the gas supply device for the deposition process provided in the third aspect of the present invention.

[0076] Please refer to Figure 4 , Figure 4 which shows a structural block diagram of a gas supply device for a deposition process provided according to some embodiments of the present invention.

[0077] As Figure 4 shown, in some non-limiting embodiments of the present invention, the processing device 400 for the deposition process may include: a reaction chamber for performing the deposition process, a memory 410, and a processor 420. The memory 410 may include, but is not limited to, the above-mentioned computer-readable storage medium provided in the fourth aspect of the present invention, on which computer instructions are stored. The processor 420 may be connected to the memory 410 and is configured to execute the computer instructions stored on the memory 410 to implement the above-mentioned gas supply method for the deposition process provided in the second aspect of the present invention.

[0078] In summary, the present invention provides a gas supply device for a deposition process, a gas supply method for a deposition process, a processing device for a deposition process, and a computer-readable storage medium, which can not only avoid the reverse flow situation during the instant gas switching, but also increase the partial pressure of the precursor source in the deposition process, thereby increasing the deposition rate of the precursor source and improving the process productivity of the entire deposition process.

[0079] The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas supply device for a deposition process, characterized in that: include: a carrier gas source connected to the precursor source through a pipeline, for delivering the precursor source into the reaction chamber so that the precursor source is deposited on the wafer surface; as well as a first gas switching device, the input end of which is connected to the reaction gas source and the first protective gas source, and the output end of which is connected to the reaction chamber; The first shielding gas source, when the carrier gas carries the precursor source into the reaction chamber to deposit the precursor source on the wafer surface, passes the first shielding gas from the reaction gas pipeline into the reaction chamber via the first gas switching device, and the flow rate of the first shielding gas is less than the flow rate of the reaction gas; The reaction gas source, after completing the deposition operation of the precursor source on the wafer surface, switches the first protective gas source to the reaction gas source via the first gas switching device, and passes the reaction gas into the reaction chamber to perform subsequent steps of the deposition process; as well as The second protective gas source is used to switch the carrier gas source and the second protective gas source through a second gas switching device after the deposition operation of the precursor source is completed on the surface of the wafer, and to introduce the second protective gas to purge the rear end of the precursor source, wherein the second gas switching device is arranged at the front end of the precursor source, the input end of which is connected to the carrier gas source and the second protective gas source, and the output end leads to the reaction chamber.

2. The air supply device according to claim 1, wherein: The first protective gas includes any one of argon, nitrogen and helium inert gases.

3. The air supply device according to claim 1, wherein: Also includes: A mass flow controller is located between the carrier gas source and the precursor source, and is used to control the flow rate of the carrier gas entering the reaction chamber.

4. The air supply device according to claim 1, wherein: The second protective gas and the carrier gas are the same gas.

5. The air supply device according to claim 1, wherein: The inlet flow rate of the second protective gas is greater than the inlet flow rate of the carrier gas.

6. A gas supply method for a deposition process, the gas supply method being performed by the gas supply apparatus for a deposition process according to any one of claims 1 to 5, the gas supply method comprising the following steps: When the precursor source carried by the carrier gas is introduced into the reaction chamber, a first protective gas is introduced at the same time to enable the precursor source to be deposited on the wafer surface, wherein the flow rate of the first protective gas is less than the flow rate of the reaction gas; In response to the completion of the deposition operation of the precursor source on the wafer surface, switching the reaction gas source and the first protective gas source, and passing the reaction gas into the reaction chamber to perform subsequent steps of the deposition process; and After the deposition operation of the precursor source is completed on the wafer surface, the carrier gas source and the second protective gas source are switched, and the second protective gas is introduced to purge the rear end of the precursor source.

7. A processing device for a deposition process, characterized in that: include: a reaction chamber for performing the deposition process; Memory; as well as A processor is connected to the memory and is configured to implement a gas supply method for a deposition process performed by the gas supply device for a deposition process according to any one of claims 1 to 5.

8. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the gas supply method for the deposition process as claimed in claim 6 is implemented.

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