A control method, device, semiconductor device, and computer-readable storage medium

Abstract

Embodiments of the present specification provide a control method, device, semiconductor equipment and computer readable storage medium. The control method controls a valve group corresponding to a target parallel chamber group to open in response to a pumping instruction carrying target chamber group information, and controls the pumping pump to perform vacuumizing operation on each of the transition chambers in the target parallel chamber group. In this process, since at least two of the transition chambers in the target parallel chamber group correspond to the same valve group, the situation that the vacuumizing start time is different due to different transition chambers being controlled by different valve groups is avoided, and the problem that the chamber pressure difference between different transition chambers is too large is avoided, thereby reducing the situation that particles in the pumping pipeline blow into the transition chamber with smaller pressure due to the chamber pressure difference between different transition chambers being too large, and the purpose of reducing transition chamber pollution is achieved.

Description

Technical Field

[0001] This specification relates to the field of semiconductor technology, specifically to device scheduling technology in the field of semiconductor technology, and more specifically to a control method, apparatus, semiconductor device and computer-readable storage medium. Background Technology

[0002] Semiconductor equipment is widely used in semiconductor wafer manufacturing. It can include modules such as an alignment module, a robotic arm, a loadlock (also known as a vacuum lock or locking container), a loadport, and multiple process chambers. Semiconductor equipment enables automated wafer processing and transfer.

[0003] The transition chamber can switch between atmospheric conditions (or normal pressure conditions) and vacuum conditions. During the state switching process, the transition chamber needs to be evacuated. Currently, the evacuation operation of the transition chamber is prone to causing contamination problems. Summary of the Invention

[0004] This specification provides a control method, apparatus, semiconductor device, and computer-readable storage medium to reduce contamination in transition chambers.

[0005] To achieve the above technical objectives, the embodiments of this specification provide the following technical solutions:

[0006] In a first aspect, one embodiment of this specification provides a control method applied to a semiconductor device, the semiconductor device including a vacuum pump, at least one parallel chamber group, and at least one valve group, each of the parallel chamber groups including at least two transition chambers, each parallel chamber group corresponding to the same valve group, and the transition chambers in each parallel chamber group being connected to the vacuum pump through the corresponding same valve group, the control method including:

[0007] In response to a vacuuming command carrying information about the target chamber group, the valve group corresponding to the target parallel chamber group is opened, and the vacuuming pump is controlled to perform vacuuming operation on each of the transition chambers in the target parallel chamber group.

[0008] The target chamber group information is used to characterize the target parallel chamber group.

[0009] Secondly, one embodiment of this specification provides a semiconductor device, including: a controller, a vacuum pump, at least one parallel chamber group and at least one valve group, each of the parallel chamber groups including at least two of the transition chambers, each of the parallel chamber groups corresponding to the same valve group, and the transition chambers in each of the parallel chamber groups being connected to the vacuum pump through the corresponding same valve group.

[0010] The controller includes a processor and a memory; wherein the memory is connected to the processor and is used to store computer programs; the processor is used to implement the control method as described above by running the computer programs stored in the memory.

[0011] Thirdly, embodiments of this specification provide a control device, including: a processor and a memory;

[0012] The memory is connected to the processor and is used to store computer programs;

[0013] The processor is configured to implement the control method described above by running a computer program stored in the memory.

[0014] Fourthly, embodiments of this specification provide a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the control method described above.

[0015] Fifthly, embodiments of this specification provide a computer program product or computer program, the computer program product including a computer program stored in a computer-readable storage medium; the processor of the computer device reads the computer program from the computer-readable storage medium, and the processor executes the computer program to implement the steps of the control method described above.

[0016] As can be seen from the above technical solution, the control method provided in this specification responds to a pumping command carrying information about the target chamber group by controlling the valve group corresponding to the target parallel chamber group to open, and controlling the pumping pump to perform a vacuuming operation on each of the transition chambers in the target parallel chamber group. During this process, since at least two of the transition chambers in the target parallel chamber group correspond to the same valve group, the difference in vacuuming start time caused by different transition chambers being controlled by different valve groups is avoided. This avoids the problem of excessive pressure difference between different transition chambers, thereby reducing the possibility of particles in the pumping pipeline being blown into the transition chamber with lower pressure due to excessive pressure difference between different transition chambers, and achieving the goal of reducing contamination of the transition chambers. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments or prior art of this specification, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this specification. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0018] Figure 1 A schematic diagram of the structure of a semiconductor device provided for one embodiment of this specification;

[0019] Figure 2 This is a schematic diagram showing the connection relationship between a parallel chamber assembly and a dry pump in a related technology.

[0020] Figure 3 A flowchart illustrating a control method provided for one embodiment of this specification;

[0021] Figure 4 A schematic diagram illustrating the connection relationship between a parallel chamber assembly and a vacuum pump, provided for one embodiment of this specification;

[0022] Figure 5 A wafer offset diagram provided for one embodiment of this specification at a conversion pressure of 600 torr;

[0023] Figure 6 Wafer offset diagram provided for one embodiment of this specification at a conversion pressure of 400 torr;

[0024] Figure 7 Wafer offset diagram provided for one embodiment of this specification at a conversion pressure of 200 torr;

[0025] Figure 8 A schematic diagram of the pumping time curve provided for one embodiment of this specification;

[0026] Figure 9 This is a schematic diagram showing the correspondence between the peak chamber pressure difference of each transition chamber in the target parallel chamber group and the transition pressure when the conversion pressure is 200 torr.

[0027] Figure 10 This is a schematic diagram showing the correspondence between the peak chamber pressure difference of each transition chamber in the target parallel chamber group and the transition pressure when the conversion pressure is 100 torr.

[0028] Figure 11 This is a schematic diagram showing the correspondence between the peak chamber pressure difference of each transition chamber in the target parallel chamber group and the transition pressure when the conversion pressure is 50 torr.

[0029] Figure 12 A schematic diagram of the monitoring curve for the number of particles in the transition chamber when the switching pressure is 200 torr;

[0030] Figure 13 A schematic diagram of the monitoring curve for the number of particles in the transition chamber when the switching pressure is 100 torr;

[0031] Figure 14 A schematic diagram of the monitoring curve for the number of particles in the transition chamber when the switching pressure is 50 torr;

[0032] Figure 15 A schematic diagram of a control device provided for one embodiment of this specification;

[0033] Figure 16 A schematic diagram of another semiconductor device provided for one embodiment of this specification;

[0034] Figure 17 This is a schematic diagram of the structure of a computing device provided for one embodiment of this specification. Detailed Implementation

[0035] Unless otherwise defined, the technical or scientific terms used in the embodiments of this specification shall have the ordinary meaning understood by one of ordinary skill in the art to which this specification pertains. The terms "first," "second," and similar terms used in the embodiments of this specification do not indicate any order, quantity, or importance, but are merely used to avoid confusion of constituent elements.

[0036] Unless the context otherwise requires, throughout this specification, "a plurality of" means "at least two," and "including" is interpreted as open-ended or encompassing, that is, "including, but not limited to." In the description of this specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this specification. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example.

[0037] The technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this specification.

[0038] Overview

[0039] refer to Figure 1 , Figure 1 A schematic diagram of a semiconductor device is shown. The device may include a first robotic arm 10, a second robotic arm 20, a vacuum lock 30, a wafer loading / unloading station 21, a calibration module 22, and multiple processing modules 11; wherein,

[0040] Each wafer loading / unloading position 21 can hold one wafer box, and each wafer box can hold multiple wafers.

[0041] The calibration module 22 may include a slot, and the calibration module 22 can calibrate the wafer placed in the slot.

[0042] The second robotic arm 20 can be a single-arm robotic arm with a slot for placing a wafer. The second robotic arm is responsible for moving the wafer between the wafer loading / unloading position 21, the calibration module 22 and the transition chamber 30.

[0043] Processing Module 11: Each processing module 11 has a slot that can hold a wafer for processing.

[0044] The first robotic arm 10 can be a dual-arm robotic arm. The two arms of the dual-arm robotic arm can be at a 180° angle and remain fixed. Each arm has a slot, and each slot can hold a wafer. Under normal circumstances, the two arms cannot perform wafer picking and placing operations at the same time. The first robotic arm 10 is responsible for transporting wafers between the transition chamber 30 and multiple process modules 11.

[0045] The transition chamber 30 (LoadLock) can have two slots. Figure 1 (For convenience, it is represented by two slots on the left and right). Each slot can hold one wafer. The transition chamber 30 can switch between atmospheric and vacuum states. When the transition chamber 30 is in atmospheric state, the wafer located on the second robotic arm side can be sent into the transition chamber 30. When the transition chamber 30 is in vacuum state, the wafer located on the first robotic arm side can be sent into the transition chamber 30.

[0046] The transition chamber 30 can be divided into a loading transition chamber and an unloading transition chamber depending on its purpose. The transition chamber is equipped with an exhaust port, which is connected to an exhaust pump through an exhaust pipe to create a non-vacuum or vacuum environment for wafer transfer.

[0047] Currently, for semiconductor devices such as PEALD (Plasma-Enhanced Atomic Layer Deposition) and PECVD (Plasma-Enhanced Chemical Vapor Deposition), the transition chambers 30 are mostly multi-chamber structures. That is, these devices have multiple transition chambers 30, each physically isolated and with independent hardware (each with its own individually controlled evacuation). (Reference) Figure 2 Taking four transition chambers 30 as an example, these four transition chambers 30 can be divided into upper and lower layers. During wafer transfer, the two transition chambers 30 of each layer are used simultaneously (simultaneously for gas filling, gas extraction, or wafer entry / exit, etc.). The gas extraction pipeline of each transition chamber 30 is controlled by its corresponding valve group in the pneumatic valve group. The end of the gas extraction pipeline (i.e., the pipeline between the pneumatic valve group and the dry pump) converges into a pipeline (Forline) leading to the dry pump. During operation, since the two transition chambers of each layer are used simultaneously, the transition chambers in each layer can be referred to as a parallel chamber group. At the same time, the transition chambers in the same parallel chamber group are in the same state.

[0048] However, during use, it was found that because the air extraction process of each transition chamber in the same parallel chamber group is controlled by its own corresponding pneumatic valve, the differences in valve angle, response time, and software control time can easily create a pressure difference between two transition chambers in the same parallel chamber group. This pressure difference can lead to backflow, that is, gas in the transition chamber with higher pressure flows through the extraction pipeline to the transition chamber with lower pressure. During this process, particles in the extraction pipeline (especially the forline) will enter the transition chamber with lower pressure along with the backflow, causing contamination of that transition chamber.

[0049] To address this issue, research has shown that the same parallel chamber group can be paired with the same valve group. This means that the same valve group controls the vacuuming process of multiple transition chambers within the same parallel chamber group. This alleviates the large pressure difference between the multiple transition chambers within the same parallel chamber group caused by differences in valve group angles, valve group response time, and software control valve timing. Consequently, it reduces the likelihood of particles in the evacuation pipeline entering the transition chambers due to backflow, thus minimizing contamination of the transition chambers during the vacuuming process.

[0050] Furthermore, further research revealed that to improve vacuuming efficiency, the vacuuming process for a specific transition chamber can be divided into a slow evacuation process and a fast evacuation process. In related technologies, each transition chamber is controlled by two evacuation valves (referred to as a slow evacuation valve and a fast evacuation valve, respectively) controlling the slow and fast evacuation processes. That is, a valve group includes two evacuation valves, which control the slow and fast evacuation processes respectively. During both the slow and fast evacuation processes, only one valve in the valve group is open. Specifically, during the slow evacuation process, the slow evacuation valve opens, pumping the chamber pressure in the transition chamber to a certain value, after which the fast evacuation valve opens, thereby increasing the evacuation rate. For example, in... Figure 2 In this diagram, LA, LB, LC, and LD represent four transition chambers. LA and LB are on the same level, belonging to a parallel chamber group, while LC and LD are on the same level. In the pneumatic valve group, XXSP represents a slow-release valve that controls the slow release of transition chamber XX, and XXFP represents a fast-release valve that controls the fast release of transition chamber XX. XX = LA / LB / LC / LD. For example, LDSP represents a slow-release valve that controls the slow release of LD, LDFP represents a fast-release valve that controls the fast release of LD, LBSP represents a slow-release valve that controls the slow release of LB, and LBFP represents a fast-release valve that controls the fast release of LB.

[0051] During the switching process, inappropriate conversion pressure (i.e., the chamber pressure when the slow-pump valve is closed and the fast-pump valve is opened for rapid evacuation) may lead to problems such as wafer shifting or excessive pressure differences between transition chambers in the same parallel chamber group. Therefore, based on the principle of corresponding the same parallel chamber group with the same valve group (i.e., the same valve group controlling the vacuuming process of multiple transition chambers in the same parallel chamber group), this manual further optimizes the conversion pressure during the transition from slow to fast evacuation, thereby solving the aforementioned problems. It also proposes a method for monitoring the chamber pressure difference between transition chambers in the same parallel chamber group during evacuation. When the monitored chamber pressure difference is large, an alarm message can be issued to alert personnel for action.

[0052] Based on the above-described inventive concept, this specification provides a control method, which will be described exemplarily below with reference to the accompanying drawings.

[0053] Exemplary methods

[0054] One embodiment of this specification provides a control method applied to a semiconductor device. The semiconductor device includes a vacuum pump, at least one parallel chamber group, and at least one valve group. Each parallel chamber group includes at least two transition chambers. Each parallel chamber group corresponds to the same valve group. The transition chambers in each parallel chamber group are connected to the vacuum pump through the corresponding same valve group. Figure 3As shown, the control method includes:

[0055] S301: In response to the evacuation command carrying information about the target chamber group, control the valve group corresponding to the target parallel chamber group to open, and control the evacuation pump to perform evacuation operation on each transition chamber in the target parallel chamber group.

[0056] Target chamber group information is used to characterize the target parallel chamber group.

[0057] Figure 3 The paper also illustrates a feasible application scenario for the control method. During the operation of a semiconductor device, the controller of the semiconductor device can execute step S301 to control the transition chamber. The controller can be a lower-level device of the semiconductor device, specifically a device with computing and communication capabilities, such as a computer.

[0058] Each parallel chamber group corresponding to the same valve group means that the evacuation control nodes of all transition chambers in each parallel chamber group are controlled by the same valve group. This valve group can control the opening and closing of the evacuation control node, thereby achieving the purpose of evacuation control of multiple transition chambers using a single valve group. The evacuation control node can include fast evacuation control nodes and slow evacuation control nodes for all transition chambers in a parallel chamber group. It is easy to understand that by controlling the opening and closing of the fast evacuation control node, the fast evacuation function of all transition chambers in the parallel chamber group can be enabled or disabled; similarly, by controlling the opening and closing of the slow evacuation control node, the slow evacuation function of all transition chambers in the parallel chamber group can be enabled or disabled.

[0059] Each parallel chamber group corresponds to the same valve group, which can also mean that the evacuation lines of all transition chambers in each parallel chamber group are controlled by the same valve group. Only one evacuation valve in a valve group is open at any given time. The open evacuation valve controls the slow or fast evacuation process of each transition chamber in the parallel chamber group. For example, refer to... Figure 4 The air extraction pipeline of the transition chamber 311 may include a first air extraction pipeline 312 and a second air extraction pipeline 313. The first air extraction pipeline 312 can be a slow extraction pipeline, which can be used when the air pump 330 slowly extracts the parallel chamber group 31. The second air extraction pipeline 313 can be a fast extraction pipeline, which can be used when the air pump 330 quickly extracts the parallel chamber group 31. The valve group can switch between fast and slow extraction by controlling the opening and closing of the first air extraction pipeline 312 and the second air extraction pipeline 313.

[0060] It should be noted that the multiple transition chambers belonging to the same parallel chamber group in this application may be located on the same layer or on different layers, and this is not limited here.

[0061] When the controller of the semiconductor device is controlling other modules, if it receives a vacuuming command carrying information about the target chamber group, it can control the valve group corresponding to the target parallel chamber group to open. This avoids problems such as command transmission delay and response time differences between valve groups that may be caused by sending vacuuming commands to the valve groups corresponding to the transition chambers in the target parallel chamber group. It also avoids the situation where the vacuuming start time is different due to different transition chambers being controlled by different valve groups, and avoids the problem of excessive pressure difference between different transition chambers. This reduces the possibility of particles in the vacuuming pipeline being blown into the transition chamber with lower pressure due to excessive pressure difference between different transition chambers, thus achieving the goal of reducing contamination of the transition chambers.

[0062] To achieve the switching control of fast and slow pumping of a parallel chamber group 31, one embodiment of this specification provides a feasible implementation method, still referring to... Figure 4 The valve assembly 320 includes a first valve 321 and a second valve 322. The transition chamber 311 includes a first suction port and a second suction port. The first suction port is connected to the suction pump 330 through a first suction pipe 312, and the first valve 321 is disposed in the first suction pipe 312. The second suction port is connected to the suction pump 330 through a second suction pipe 313, and the second valve 322 is disposed in the second suction pipe 313. The side of the valve assembly 320 away from the transition chamber 311 can be connected to the suction pump 330 through a suction pipe 331. In the preceding text, the suction pipe 331 can be referred to as a forline pipe. In some embodiments, both the first valve 321 and the second valve 322 can be pneumatic valves. However, this specification does not limit the specific types of the first valve 321 and the second valve 322. They can also be other valves whose opening degree is controlled by electrical signals, depending on the actual situation.

[0063] In response to a evacuation command carrying information about the target chamber group, the valve group corresponding to the target parallel chamber group is opened, and the evacuation pump is controlled to perform a vacuuming operation on each transition chamber in the target parallel chamber group, including:

[0064] In response to the evacuation command, the first valve in the valve group corresponding to the target parallel chamber group is opened at a first opening value and the second valve is closed, so as to control the evacuation pump to perform evacuation operation on each transition chamber in the target parallel chamber group at a first rate.

[0065] When the chamber pressure of multiple transition chambers in the target parallel chamber group is less than or equal to the preset conversion pressure, the second valve in the valve group corresponding to the target parallel chamber group is opened at the second opening value, and the first valve is closed, so as to control the vacuum pump to perform vacuuming operation on each transition chamber in the target parallel chamber group at the second rate; wherein, the first opening value is less than the second opening value, and the first rate is less than the second rate.

[0066] In this embodiment, by controlling the opening and closing of the first extraction pipeline, which is connected to multiple transition chambers in the parallel chamber group, through the first valve, slow extraction control of multiple transition chambers in the parallel chamber group can be achieved. By controlling the opening and closing of the second extraction pipeline, which is connected to multiple transition chambers in the parallel chamber group, through the second valve, fast extraction control of multiple transition chambers in the parallel chamber group can be achieved. When switching the extraction process of the parallel chamber group from slow extraction to fast extraction, it is only necessary to switch the opening and closing states of the first and second valves in the valve group. This avoids the differences in command issuance time and command response time of each valve group that may be caused by each transition chamber being controlled and switched by an independent valve group. It is beneficial to reduce the difference in chamber pressure between each transition chamber in the parallel chamber group, and prevent particles in the extraction pipeline 331 from entering the transition chamber with lower pressure through the extraction pipeline due to excessive chamber pressure differences, thereby avoiding the problem of particle contamination in a certain transition chamber.

[0067] In related technologies, the switching pressure for the transition from slow to fast drawing is generally set based on production capacity or wafer offset. However, the inventors of this solution have found that during the switching process from slow to fast drawing, different switching pressures can lead to different instantaneous pressure differences between the transition chambers in the parallel chamber group. A large instantaneous pressure difference can also cause particulate contamination in the transition chambers.

[0068] Therefore, to avoid the possibility of pressure fluctuations in the transition chambers during valve group state switching due to an inappropriate preset switching pressure, which could lead to excessive pressure differences between transition chambers in the same parallel chamber group, in one embodiment of this specification, the preset switching pressure corresponds to the target parallel chamber group, and the process of determining the preset switching pressure includes:

[0069] Based on the wafer offset relationship of each transition chamber in the target parallel chamber group, the upper pressure limit of the target parallel chamber group is determined; the wafer offset relationship includes the correspondence between different conversion pressures and wafer offsets, and the upper pressure limit is the conversion pressure corresponding to the wafer offset equal to the preset offset threshold; the conversion pressure is the chamber pressure when the second valve in the valve group corresponding to the transition chamber is opened with the second opening value and the first valve is closed.

[0070] Based on the evacuation time curves of each transition chamber in the target parallel chamber group, the lower pressure limit of the target parallel chamber group is determined. The evacuation time curves include the correspondence between different conversion pressures and evacuation time. The evacuation time represents the time required to evacuate the transition chamber to the target pressure under the corresponding conversion pressure. The lower pressure limit is the conversion pressure corresponding to the evacuation time equal to the preset time threshold.

[0071] Based on the peak pressure curve of the target parallel chamber group, the preset switching pressure is determined; the peak pressure curve includes the correspondence between different switching pressures and the peak chamber pressure difference of each transition chamber in the target parallel chamber group between the upper and lower pressure limits; the preset switching pressure is the switching pressure corresponding to the minimum peak chamber pressure difference.

[0072] When the switching pressure is too high when the valve group switches from the first state (i.e., the first valve in the valve group is open with the first opening value and the second valve is closed) to the second state (i.e., the second valve in the valve group is open with the second opening value and the first valve is closed), the sudden change in pumping speed can easily cause large airflow disturbances, resulting in large displacement of the wafer during the vacuuming process. Therefore, it is necessary to determine a maximum value of the switching pressure by obtaining the wafer offset relationship during multiple wafer transfers to avoid the problem of large wafer offset caused by exceeding this maximum value.

[0073] To determine the maximum value of the switching pressure, in one specific embodiment, reference is made to... Figures 5-7 , Figures 5-7 A graph showing wafer offset under different shift pressures. Figure 5 This is a wafer offset diagram when the conversion pressure is 600 torr. Figure 6 This is a wafer offset diagram when the conversion pressure is 400 torr. Figure 7 This is a wafer offset diagram when the conversion pressure is 200 torr. When the preset offset threshold is 1, it can be seen that at a conversion pressure of 200 torr, the wafer offset is approximately equal to the preset offset threshold. Therefore, the upper limit of the pressure can be set to 200 torr. This upper limit represents the maximum value that the preset conversion pressure can be set to. When the preset conversion pressure exceeds this maximum value, a large wafer offset may occur.

[0074] Furthermore, considering production efficiency, the preset conversion pressure should not be set too low, as an excessively low preset conversion pressure will cause the slow extraction process to take too long, resulting in low production efficiency. Therefore, refer to... Figure 8 , Figure 8An example of a pumping time curve is shown, which illustrates the shift (slow to fast pumping) pressure, i.e., the conversion pressure, and the pumping time (Pump time, which includes the time required for slow pumping + fast pumping). The pumping time curve (y = -0.0253x + 9.2655) was fitted by sampling points. By combining this pumping time curve with production efficiency requirements, the lower limit of pressure can be determined.

[0075] After determining the upper and lower pressure limits, multiple peak pressure curves can be identified between these limits. Based on these peak pressure curves, a suitable preset switching pressure can then be determined. (Reference) Figures 9-11 , Figures 9-11 They are respectively the conversion pressure (in) Figures 9-11 The figure shows the correspondence between the peak chamber pressure difference (LA / B pressure difference) of each transition chamber in the target parallel chamber group when the switching pressure (LB Shift Pre) is 200 torr, 100 torr, and 50 torr, in torr. Figures 12-14 The figure shows monitoring curves of the number of particles in the transition chamber when the switching pressure is 200 torr, 100 torr, and 50 torr. Figures 9-14 In this example, we will take the target parallel chamber group, which includes the transition chamber LA and the transition chamber LB, as an example. Figures 9-11 In the graph, the horizontal axis represents time (seconds), and the vertical axis represents the pressure difference between chambers LA and LB (LA / B pressure difference), with the unit being torr. Figures 12-14 In the figure, the particle monitoring curve is for the transition chamber LB. The horizontal axis represents time (seconds), and the vertical axis represents the number of particles in the transition chamber LB, in particles. `spec` can represent the threshold of particles entering the transition chamber; in one embodiment, `sepc` ≤ 6 particles. Figures 12-14 It can be seen that the number of particles in the transition chamber is minimal when the conversion pressure is 100 torr, in conjunction with the reference... Figures 9-11 When the switching pressure is 100 torr, the chamber pressure difference between LA and LB is also the smallest.

[0076] In summary, the above method comprehensively considers factors such as wafer offset, pumping time, and peak chamber pressure difference between different transition chambers when setting the preset conversion pressure. This ensures that the preset pressure difference is set to minimize the peak chamber pressure difference between the transition chambers in the same parallel chamber group during fast-slow pumping transitions, while preventing significant wafer offset and excessively long pumping time. This avoids chamber pressure fluctuations in the transition chambers during valve group state switching, which could lead to excessively large chamber pressure differences between the transition chambers in the same parallel chamber group. Furthermore, it prevents particles from entering the transition chambers due to excessive chamber pressure differences.

[0077] In one feasible implementation, in order to take into account the various transition chambers in the same parallel chamber group and make the determination of the preset switching pressure more reasonable, the upper limit value of the pressure of the target parallel chamber group is determined according to the wafer offset relationship of each transition chamber in the target parallel chamber group, including:

[0078] Based on the wafer offset relationship of each transition chamber, determine the upper pressure limit value corresponding to each transition chamber;

[0079] The minimum pressure limit value among the corresponding pressure limits of each transition chamber is determined as the pressure limit value of the target parallel chamber group.

[0080] This avoids the problem of the wafer offset in the transition chamber being too large when the upper pressure limit of the target parallel chamber group exceeds the upper pressure limit of a certain transition chamber.

[0081] Based on the evacuation time curves of each transition chamber in the target parallel chamber group, the lower pressure limit of the target parallel chamber group is determined as follows:

[0082] Based on the evacuation time curves of each transition chamber, determine the lower pressure limit corresponding to each transition chamber;

[0083] The maximum value among the lower pressure limits corresponding to each transition chamber is determined as the lower pressure limit of the target parallel chamber group.

[0084] This avoids the problem that the lower pressure limit of the target parallel chamber group is lower than the lower pressure limit of a certain transition chamber, which would result in a longer slow pumping process in that transition chamber and a longer time consumption.

[0085] In related technologies, during the vacuuming operation of the transition chamber, the pressure difference between multiple transition chambers in the same parallel chamber group is not monitored or alarmed. Timely detection of the pressure difference between multiple transition chambers in the same parallel chamber group is crucial for timely detection of whether the transition chamber is contaminated by particles. Therefore, in one embodiment of this specification, the control method further includes:

[0086] During the vacuuming operation, the chamber pressure difference between each transition chamber in each parallel chamber group is obtained;

[0087] When the pressure difference between any two chambers exceeds the pressure difference threshold, an alarm message is issued. The alarm message is used to indicate that there is an excessive pressure difference between the transition chambers in the parallel chamber group.

[0088] Alarm information can be issued by the controller, and when the semiconductor device includes a host computer, the alarm information can be displayed on the host computer.

[0089] This alarm message can indicate that there may be an excessive pressure difference between the transition chambers in a parallel chamber group, prompting management personnel to conduct inspections or repairs.

[0090] Optionally, in order to make the pressure difference threshold setting more reasonable, in one embodiment of this specification, the pressure difference threshold is a preset multiple of the preset switching pressure, and the preset multiple is greater than 1; the preset switching pressure is the maximum chamber pressure of each transition chamber when the second valve in the valve group corresponding to the parallel chamber group is opened with a second opening value and the first valve is closed.

[0091] The preset multiplier can be 1.1, 1.2, 1.3, etc., but this manual does not limit it and the specific multiplier depends on the actual situation.

[0092] The specific method for setting the preset conversion pressure can be determined based on the relevant description above, and will not be repeated here.

[0093] In one specific implementation, before the parallel chamber group is put into use, the controller can determine the preset conversion pressure and other parameters corresponding to each parallel chamber group by performing the above-mentioned preset conversion pressure determination process.

[0094] This process can specifically include:

[0095] 1. Determine the valve opening degree corresponding to fast and slow pumping (e.g., the opening degree of the first valve, the opening degree of the second valve, etc.);

[0096] 2. Before applying the new parallel chamber group, the control nodes of the transition chambers in the same parallel chamber group are controlled by a valve group to eliminate the asynchronous phenomenon in software and hardware control (difference between valve control and valve response time).

[0097] 3. Determine the maximum value P1 (i.e., the upper limit of pressure) of the switching pressure when switching from the first valve to the second valve based on the wafer offset relationship of multiple wafer transfers;

[0098] 4. The controller automatically matches the switching pressure when switching from the first valve to the second valve, and performs multiple venting and evacuation operations on the transition chambers in the same parallel chamber group. It records the time curves of the evacuation process (which can be the process from one atmosphere of 760 torr to the allowable vacuum transfer pressure of 0.2 torr) under different switching pressures (the slowest transition chamber can be used as the standard); based on the production capacity requirements, it gives the slowest allowable evacuation time, and determines the corresponding switching pressure according to the above time curve, which is the minimum allowable switching pressure P2 (i.e., the lower limit of pressure) for production capacity.

[0099] 5. The controller automatically matches the switching pressure between the first valve and the second valve of the transition chamber in the same parallel chamber group between P1 and P2. It performs multiple venting and evacuation operations on the transition chamber in the same parallel chamber group and monitors the peak pressure curve in real time (the pressure of transition chamber LA is defined as PA, the pressure of transition chamber LB is defined as PB, the pressure difference between LA and LB during evacuation is defined as PAB = PA - PB, the pressure of transition chamber LC is defined as PC, the pressure of transition chamber LD is defined as PD, the pressure difference between LC and LD during evacuation is defined as PCD = PC - PD). It determines the minimum peak values ​​of PAB and PCD under different switching pressures, PABmin and PCDmin, and the corresponding optimal switching pressures are defined as PshiftAB and PshiftCD, i.e., PshiftAB = PABmin and PshiftCD = PCDmin.

[0100] 6. Set the switching pressures from the first valve to the second valve in the transition chamber of the same parallel chamber group as PshiftAB and PshiftCD; after assigning a certain tolerance to the minimum peak values ​​of the evacuation pressure difference of the transition chamber in the same parallel chamber group as PABmin and PCDmin, set them as the alarm upper limit for excessive pressure difference.

[0101] 7. After the above steps, the new parallel chamber group is put into use, and the suction pressure difference curve is monitored in real time. If the suction pressure difference of the transition chamber in the same parallel chamber group exceeds the limit and alarm occurs, the operation is stopped immediately, and the parallel chamber group is troubleshooted and particle testing is carried out to ensure product yield.

[0102] Exemplary devices and equipment

[0103] In one exemplary embodiment of this specification, a control device is also provided, applied to a semiconductor device. The semiconductor device includes a vacuum pump, at least one parallel chamber group, and at least one valve group. Each parallel chamber group includes at least two transition chambers. Each parallel chamber group corresponds to the same valve group. The transition chambers in each parallel chamber group are connected to the vacuum pump through the corresponding same valve group. Figure 15 As shown, the control device includes:

[0104] The vacuum control module 1501 is used to respond to the evacuation command carrying the target chamber group information, control the valve group corresponding to the target parallel chamber group to open, and control the evacuation pump to perform evacuation operation on each transition chamber in the target parallel chamber group.

[0105] Target chamber group information is used to characterize the target parallel chamber group.

[0106] For specific limitations regarding the control device, please refer to the limitations regarding the control method above, which will not be repeated here. Each module in the aforementioned control device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in hardware or independently of the processor in the computer device, or stored in software in the memory of the computer device, so that the processor can call and execute the operations corresponding to each module.

[0107] like Figure 16 As shown, in an exemplary embodiment of this specification, a semiconductor device 100 is also provided, including: a controller 40, a vacuum pump, at least one parallel chamber group and at least one valve group, each parallel chamber group including at least two transition chambers 30, each parallel chamber group corresponding to the same valve group, and the transition chambers 30 in each parallel chamber group being connected to the vacuum pump through the corresponding same valve group.

[0108] The controller is configured to: in response to a vacuuming command carrying information about the target chamber group, control the valve group corresponding to the target parallel chamber group to open, and control the vacuum pump to perform vacuuming operation on each transition chamber in the target parallel chamber group;

[0109] Target chamber group information is used to characterize the target parallel chamber group.

[0110] Optionally, the semiconductor device 100 may also include a first robotic arm 10 and multiple processing modules 11;

[0111] The controller 40 can collect information from the controlled module 50 and control the controlled module 50 to work collaboratively. The controlled module 50 may include some or all of the above-mentioned air pump, at least one parallel chamber group, at least one valve group, first robot arm 10, controller 40, and multiple processing modules 11. In some embodiments, the controlled module 50 may also include a second robot arm 20, a calibration module 22, and a wafer loading / unloading position 21, etc.

[0112] In some embodiments, the controller 40 is, for example, a lower-level device of the semiconductor device 100. This specification does not limit this, and it depends on the actual situation.

[0113] Another embodiment of this application provides another control device, which can be a computing device, see [link to previous document]. Figure 17As shown, the computing device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program performing the steps of the control method according to various embodiments of this specification as described in the above embodiments.

[0114] The internal structure of the computing device can be as follows: Figure 17 As shown, the computing device includes a processor, memory, network interface, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it follows the steps of the control methods according to various embodiments of this specification as described in the above embodiments.

[0115] The processor may include the main processor, as well as baseband chips, modems, etc.

[0116] The memory stores a program that executes the technical solution of this invention, and may also store an operating system and other critical business functions. Specifically, the program may include program code, which includes computer operation instructions. More specifically, the memory may include read-only memory (ROM), other types of static storage devices capable of storing static information and instructions, random access memory (RAM), other types of dynamic storage devices capable of storing information and instructions, disk storage, flash memory, etc.

[0117] The processor can be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits used to control the execution of the program of the present invention. It can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0118] Input devices may include devices that receive data and information input by the user, such as keyboards, mice, cameras, scanners, light pens, voice input devices, touch screens, pedometers, or gravity sensors.

[0119] Output devices may include devices that allow information to be output to the user, such as displays, printers, speakers, etc.

[0120] The communication interface may include any transceiver-like device for communicating with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0121] The processor executes programs stored in memory and calls other devices, which can be used to implement various steps of any of the control methods provided in the above embodiments of this application.

[0122] The computing device may also include a display component and a voice component. The display component may be a liquid crystal display screen or an e-ink display screen. The input device of the computing device may be a touch layer covering the display component, or a button, trackball or touchpad set on the casing of the computing device, or an external keyboard, touchpad or mouse, etc.

[0123] Those skilled in the art will understand that Figure 17 The structures shown are merely block diagrams of some structures related to the solutions in this specification and do not constitute a limitation on the computing devices on which the solutions in this specification are applied. Specific computing devices may include more or fewer components than those shown in the figures, or combine certain components, or have different component arrangements.

[0124] Exemplary computer program products and storage media

[0125] In addition to the methods and devices described above, the control methods provided in the embodiments of this specification can also be computer program products, which include computer program instructions that, when executed by a processor, cause the processor to perform the steps in the control methods according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0126] The computer program product described herein can be written in any combination of one or more programming languages ​​to perform the operations of the embodiments described herein. These programming languages ​​include object-oriented programming languages ​​such as Java and C++, as well as conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0127] Furthermore, embodiments of this specification also provide a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor of the steps in the control methods according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0128] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this specification can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0129] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0130] The embodiments described above are merely illustrative of several implementation methods outlined in this specification. While the descriptions are specific and detailed, they should not be construed as limiting the scope of the solutions provided in this specification. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this specification, and these all fall within the scope of protection of this specification. Therefore, the scope of protection for this patent should be determined by the appended claims.

Claims

1. A control method, characterized in that, The method is applied to semiconductor equipment, which includes a vacuum pump, at least one parallel chamber group, and at least one valve group. Each parallel chamber group includes at least two transition chambers. Each parallel chamber group corresponds to the same valve group. Each transition chamber in the same parallel chamber group is connected to the vacuum pump through the same valve group. The transition chambers in the parallel chamber group are used simultaneously during operation. "Each parallel chamber group corresponds to the same valve group" means that the vacuum control nodes of all transition chambers in each parallel chamber group are controlled by the same valve group. This valve group controls the opening and closing of the vacuum control nodes. The control method includes: In response to a vacuuming command carrying information about the target chamber group, the valve group corresponding to the target parallel chamber group is opened, and the vacuuming pump is controlled to perform vacuuming operation on each of the transition chambers in the target parallel chamber group. The target chamber group information is used to characterize the target parallel chamber group.

2. The method according to claim 1, characterized in that, The valve group includes a first valve and a second valve; each of the transition chambers includes a first air extraction port and a second air extraction port, the first air extraction port is connected to the air extraction pump through a first air extraction pipeline, the first valve is disposed in the first air extraction pipeline, the second air extraction port is connected to the air extraction pump through a second air extraction pipeline, and the second valve is disposed in the second air extraction pipeline. The step of responding to a vacuuming command carrying information about the target chamber group, controlling the valve group corresponding to the target parallel chamber group to open, and controlling the vacuum pump to perform a vacuuming operation on each of the transition chambers in the target parallel chamber group includes: In response to the evacuation command, the first valve in the valve group corresponding to the target parallel chamber group is controlled to open at a first opening value, and the second valve is controlled to close, so as to control the evacuation pump to perform evacuation operation on each of the transition chambers in the target parallel chamber group at a first rate; When the chamber pressure of multiple transition chambers in the target parallel chamber group is less than or equal to the preset conversion pressure, the second valve in the valve group corresponding to the target parallel chamber group is controlled to open at a second opening value, and the first valve is closed, so as to control the vacuum pump to perform vacuuming operation on each transition chamber in the target parallel chamber group at a second rate. Wherein, the first opening value is less than the second opening value, and the first speed is less than the second speed.

3. The method according to claim 2, characterized in that, The preset switching pressure corresponds to the target parallel chamber group, and the process of determining the preset switching pressure includes: Based on the wafer offset relationship of each transition chamber in the target parallel chamber group, the upper pressure limit of the target parallel chamber group is determined; the wafer offset relationship includes the correspondence between different conversion pressures and wafer offsets, and the upper pressure limit is the conversion pressure corresponding to a wafer offset equal to a preset offset threshold; the conversion pressure is the chamber pressure when the second valve in the valve group corresponding to the transition chamber is opened with a second opening value and the first valve is closed. Based on the evacuation time curves of each transition chamber in the target parallel chamber group, the lower pressure limit of the target parallel chamber group is determined; the evacuation time curve includes the correspondence between different conversion pressures and evacuation time, and the evacuation time represents the time required to evacuate the transition chamber to the target pressure under the corresponding conversion pressure; the lower pressure limit is the conversion pressure corresponding to the evacuation time equal to the preset time threshold. The preset switching pressure is determined based on the peak pressure curve of the target parallel chamber group; the peak pressure curve includes the correspondence between different switching pressures and the peak chamber pressure difference of each transition chamber in the target parallel chamber group between the upper pressure limit and the lower pressure limit.

4. The method according to claim 3, characterized in that, The preset conversion pressure is the conversion pressure corresponding to the minimum peak chamber pressure difference.

5. The method according to claim 3, characterized in that, The step of determining the upper pressure limit of the target parallel chamber group based on the wafer offset relationship of each transition chamber in the target parallel chamber group includes: Based on the wafer offset relationship of each transition chamber, determine the upper pressure limit value corresponding to each transition chamber; The minimum pressure limit value among the pressure limits corresponding to each of the transition chambers is determined as the pressure limit value of the target parallel chamber group.

6. The method according to claim 3, characterized in that, The step of determining the lower pressure limit of the target parallel chamber group based on the evacuation time curve of each transition chamber in the target parallel chamber group includes: Based on the evacuation time curves of each transition chamber, determine the lower pressure limit value corresponding to each transition chamber; The maximum value among the lower pressure limits corresponding to each of the transition chambers is determined as the lower pressure limit of the target parallel chamber group.

7. The method according to any one of claims 1 to 6, characterized in that, Also includes: During the vacuuming operation, the chamber pressure difference between each transition chamber in each of the parallel chamber groups is obtained; When the pressure difference between any of the chambers exceeds the pressure difference threshold, an alarm message is issued. The alarm message is used to indicate that there is an excessive pressure difference between the transition chambers in the parallel chamber group.

8. The method according to claim 7, characterized in that, The valve group includes a first valve and a second valve; the pressure difference threshold is a preset multiple of the preset switching pressure, and the preset multiple is greater than 1; the preset switching pressure is the maximum chamber pressure of each transition chamber when the second valve in the valve group corresponding to the parallel chamber group is opened with a second opening value and the first valve is closed.

9. A semiconductor device, characterized in that, include: The system includes a controller, a vacuum pump, at least one parallel chamber group, and at least one valve group. Each parallel chamber group includes at least two transition chambers. Each parallel chamber group corresponds to the same valve group. The transition chambers in each parallel chamber group are connected to the vacuum pump through the same valve group. The transition chambers in the parallel chamber group are used simultaneously during operation. Each parallel chamber group corresponding to the same valve group means that the vacuum control nodes of all transition chambers in each parallel chamber group are controlled by the same valve group, which controls the opening and closing of the vacuum control nodes. The controller includes a processor and a memory; wherein the memory is connected to the processor and is used to store computer programs; the processor is used to implement the control method as described in any one of claims 1-8 by running the computer programs stored in the memory.

10. A control device, characterized in that, include: Processor and memory; The memory is connected to the processor and is used to store computer programs; The processor is configured to implement the control method as described in any one of claims 1-8 by running a computer program stored in the memory.

11. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, which, when executed by a processor, implements the control method as described in any one of claims 1-8.

Images