Display panel and method for manufacturing the same

Abstract

The present application provides a display panel and a method for manufacturing the same. In the present application, an isolation structure is provided so that sub-pixels can be electrically connected to each other, thereby facilitating the cathode uniformity of the sub-pixels; further, the width of the cross section of the isolation structure in a direction perpendicular to the pixel definition layer is gradually reduced, and the positive projection of the isolation structure on the pixel definition layer is located within the surface where the pixel definition layer and the isolation structure contact, so that when the contact area between the isolation structure and the pixel definition layer remains unchanged, the end of the isolation structure away from the pixel definition layer will not block the vertical light (i.e., the light perpendicular to the pixel definition layer) emitted by the sub-pixel, thereby facilitating improving the light extraction efficiency of the sub-pixel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for preparing the same. Background Art

[0002] In order to achieve high resolution and colorization of OLED (Organic Light-Emitting Diode) and better solve the problems of low cathode template resolution and low device yield, a cathode isolation column structure was introduced in actual research. That is, no metal mask plate is used in device preparation. Instead, an insulating partition is made on the substrate before evaporating the organic film and the metal cathode, ultimately separating the different pixels of the device and realizing a pixel array.

[0003] The cathode isolation column structure includes a conductive structure overlapping the cathode and an insulating structure shielding the conductive structure. However, the structural design of the insulating structure in the cathode isolation column structure will affect the aperture ratio of the pixel, thereby reducing the light extraction efficiency of the OLED. Summary of the invention

[0004] The main technical problem solved by the present application is to provide a display panel and a method for preparing the same, so as to solve the problem in the prior art that the pixel aperture ratio is affected by the introduction of a cathode isolation column structure.

[0005] In order to solve the above technical problems, the first technical solution provided by the present application is: to provide a display panel, which includes:

[0006] a pixel definition layer having a plurality of pixel openings;

[0007] An isolation structure protrudes from the pixel definition layer and surrounds the pixel opening;

[0008] A plurality of sub-pixels are arranged in the pixel opening in a one-to-one correspondence; the sub-pixels are electrically connected to each other through the isolation structure;

[0009] An encapsulation layer, covering the sub-pixel and located on a side of the isolation structure;

[0010] Among them, the width of the cross-section of the isolation structure in the direction perpendicular to the pixel definition layer gradually decreases, and the orthographic projection of the isolation structure on the pixel definition layer is located within the surface of the pixel definition layer in contact with the isolation structure; the top surface of the encapsulation layer is arranged flush with the surface of the side of the isolation structure away from the pixel definition layer; the top surface of the encapsulation layer is configured as the side of the encapsulation layer away from the pixel definition layer and the surface in contact with the isolation structure.

[0011] Wherein, the isolation structure includes a conductive layer, the side wall of the conductive layer has a trapezoidal cross-section in a direction perpendicular to the plane of the pixel definition layer, and the angle between the side wall of the conductive layer and the upper surface of the pixel definition layer covered by the corresponding conductive layer is less than 90 degrees; the top surface of the encapsulation layer is flush with the surface of the conductive layer on the side away from the pixel definition layer.

[0012] Among them, the isolation structure includes a conductive layer and an insulating layer arranged on the upper surface of the conductive layer; the orthographic projection of the insulating layer on the conductive layer is located within the conductive layer; the top surface of the encapsulation layer is arranged flush with the surface of the insulating layer on one side away from the pixel definition layer.

[0013] Wherein, the encapsulation layer is disposed close to the side wall of the isolation structure and in contact with the side wall of the isolation structure.

[0014] The display panel further includes an encapsulation layer, which covers the isolation structure and the encapsulation layer, and a surface of the encapsulation layer close to the pixel definition layer is in contact with a surface of the isolation structure away from the pixel definition layer.

[0015] The sub-pixel includes an anode, a light-emitting layer and a cathode which are stacked in sequence. The cathode is arranged between the light-emitting layer and the encapsulation layer, and is in contact with and conductive to the isolation structure.

[0016] In order to solve the above technical problems, the second technical solution provided by the present application is: to provide a method for preparing a display panel, which is used to prepare the above display panel; wherein, the method comprises:

[0017] A substrate to be packaged is provided, the substrate to be packaged comprises a pixel definition layer, a plurality of sub-pixels, a main body structure, an eaves structure and an etching protection layer; the pixel definition layer has a plurality of pixel openings; a plurality of sub-pixels are arranged in the pixel openings in a one-to-one correspondence; the main body structure is arranged protruding from the pixel definition layer and surrounds the pixel openings; the eaves structure is arranged on the upper surface of the main body structure and shields the main body structure, and extends out of the main body structure in a plane direction parallel to the pixel definition layer; the etching protection layer covers the eaves structure, the sub-pixels and the side walls of the main body structure;

[0018] The eaves structure is removed, and the etching protection layer is partially etched to form the encapsulation layer, and the main structure is partially etched to form an isolation structure; wherein the encapsulation layer covers the sub-pixel and is located on the side of the isolation structure; the top surface of the encapsulation layer is flush with the surface of the side of the isolation structure away from the pixel definition layer; the top surface of the encapsulation layer is configured as a side of the encapsulation layer away from the pixel definition layer and a surface that is in contact with the isolation structure.

[0019] Wherein, the step of removing the eaves structure, partially etching the etching protection layer to form the encapsulation layer, and partially etching the main structure to form an isolation structure further comprises:

[0020] A packaging layer is prepared on a side of the isolation structure away from the pixel definition layer, and the packaging layer covers the isolation structure and the encapsulation layer.

[0021] The main structure includes a conductive portion, the sidewall of the conductive portion has a trapezoidal cross section in a direction perpendicular to the plane of the pixel definition layer, and the angle between the sidewall of the conductive portion and the upper surface of the pixel definition layer covered by the conductive portion is less than 90 degrees;

[0022] The step of removing the eaves structure, partially etching the etching protection layer to form the encapsulation layer, and partially etching the main structure to form an isolation structure comprises:

[0023] The eaves structure is removed, and the etching protection layer is partially etched to form the encapsulation layer, and the conductive part is partially etched to form the isolation structure; wherein the isolation structure includes a conductive layer, and the top surface of the encapsulation layer is flush with the surface of the side of the conductive layer away from the pixel definition layer.

[0024] The main structure includes a conductive portion and an insulating portion disposed on the upper surface of the conductive portion, the insulating portion has a trapezoidal cross section in a direction perpendicular to the plane of the pixel definition layer, and an angle between a side wall of the insulating portion and an upper surface of the conductive portion covered by the insulating portion is less than 90 degrees;

[0025] The step of removing the eaves structure, partially etching the etching protection layer to form the encapsulation layer, and partially etching the main structure to form an isolation structure comprises:

[0026] The eaves structure is removed, and the etching protection layer is partially etched to form the encapsulation layer, and the insulating portion of the main structure is partially etched to form the isolation structure; wherein the isolation structure comprises a conductive layer and an insulating layer arranged on the upper surface of the conductive layer; the top surface of the encapsulation layer is arranged flush with the surface of the side of the insulating layer away from the pixel definition layer.

[0027] Beneficial effects of the present application: Different from the prior art, the present application provides a display panel and a method for preparing the same, wherein the display panel includes a pixel definition layer, an isolation structure, a plurality of sub-pixels and an encapsulation layer. The pixel definition layer has a plurality of pixel openings. The isolation structure is arranged protruding from the pixel definition layer and surrounds the pixel opening. A plurality of sub-pixels are arranged in the pixel opening in a one-to-one correspondence. The sub-pixels are electrically connected to each other through the isolation structure. The encapsulation layer covers the sub-pixels and is located on the side of the isolation structure. The width of the cross section of the isolation structure in a direction perpendicular to the pixel definition layer gradually decreases, and the orthographic projection of the isolation structure on the pixel definition layer is located within the surface of the pixel definition layer in contact with the isolation structure. The top surface of the encapsulation layer is arranged flush with the surface of the side of the isolation structure away from the pixel definition layer. The top surface of the encapsulation layer is configured as a side of the encapsulation layer away from the pixel definition layer and a surface in contact with the isolation structure. In the present application, an isolation structure is provided so that the sub-pixels can be electrically connected to each other, which is beneficial to the cathode uniformity of the sub-pixels; further, the width of the cross-section of the isolation structure in the direction perpendicular to the pixel definition layer is gradually reduced, and the positive projection of the isolation structure on the pixel definition layer is located within the surface where the pixel definition layer and the isolation structure are in contact, so that when the contact area between the isolation structure and the pixel definition layer remains unchanged, the end of the isolation structure away from the pixel definition layer will not block the vertical light emitted by the sub-pixel (i.e., the light perpendicular to the pixel definition layer), which is beneficial to improving the light output efficiency of the sub-pixel. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0029] Figure 1 is a schematic cross-sectional structure diagram of a first embodiment of a display panel provided by the present application;

[0030] Figure 2 is a schematic cross-sectional structure diagram of a second embodiment of a display panel provided by the present application;

[0031] Figure 3 It is a schematic flow chart of an embodiment of a method for manufacturing a display panel provided in the present application;

[0032] Figure 4 yes Figure 3 A schematic structural diagram corresponding to an implementation method of steps S10 to S30;

[0033] Figure 5 yes Figure 3 A structural schematic diagram corresponding to another implementation method of steps S10 to S30.

[0034] Description of Figure Numbers:

[0035] 10. Pixel definition layer; 11. Pixel opening; 20. Isolation structure; 21. Conductive layer; 22. Insulating layer; 30. Sub-pixel; 31. Anode; 32. Light-emitting layer; 33. Cathode; 40. Encapsulation layer; 50. Packaging layer; 51. First packaging layer; 52. Second packaging layer; 60. Main structure; 61. Conductive part; 62. Insulating part; 70. Eaves structure; 80. Etching protection layer; 90. Driving substrate. DETAILED DESCRIPTION

[0036] The scheme of the embodiment of the present application is described in detail below in conjunction with the drawings of the specification.

[0037] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0038] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] The terms "first", "second", "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] See also Figure 1 , Figure 1 It is a schematic diagram of the cross-sectional structure of the first embodiment of the display panel provided in the present application.

[0042] The present application provides a display panel, which includes a pixel definition layer 10, an isolation structure 20, a plurality of sub-pixels 30 and an encapsulation layer 40. The pixel definition layer 10 has a plurality of pixel openings 11. The isolation structure 20 is arranged protruding from the pixel definition layer 10 and surrounds the pixel opening 11. The plurality of sub-pixels 30 are arranged in the pixel opening 11 in a one-to-one correspondence. The sub-pixels 30 are electrically connected to each other through the isolation structure 20. The encapsulation layer 40 covers the sub-pixels 30 and is located on the side of the isolation structure 20. The width of the cross section of the isolation structure 20 in the direction perpendicular to the pixel definition layer 10 gradually decreases, and the orthographic projection of the isolation structure 20 on the pixel definition layer 10 is located on the surface of the pixel definition layer 10 in contact with the isolation structure 20. The top surface of the encapsulation layer 40 is arranged flush with the surface of the isolation structure 20 on the side away from the pixel definition layer 10. The top surface of the encapsulation layer 40 is configured as a side of the encapsulation layer 40 away from the pixel definition layer 10 and a surface in contact with the isolation structure 20.

[0043] In the present application, an isolation structure 20 is provided so that the sub-pixels 30 can be electrically connected to each other, which is beneficial to the uniformity of the cathode 33 of the sub-pixel 30; further, the width of the cross section of the isolation structure 20 in the direction perpendicular to the pixel definition layer 10 is gradually reduced, and the positive projection of the isolation structure 20 on the pixel definition layer 10 is located within the surface where the pixel definition layer 10 and the isolation structure 20 contact, so that when the contact area between the isolation structure 20 and the pixel definition layer 10 remains unchanged, the end of the isolation structure 20 away from the pixel definition layer 10 will not block the vertical light emitted by the sub-pixel 30 (i.e., the light perpendicular to the pixel definition layer 10), which is beneficial to improve the light output efficiency of the sub-pixel 30.

[0044] The pixel definition layer 10 is used to define the position of the sub-pixel 30. A plurality of pixel openings 11 are arranged at intervals. The material and height of the pixel definition layer 10 are not limited here and can be selected according to actual needs.

[0045] One sub-pixel 30 is disposed in one pixel opening 11. That is, a plurality of sub-pixels 30 are disposed at intervals. One sub-pixel 30 corresponds to one color. The color corresponding to the sub-pixel 30 and the arrangement of the sub-pixels 30 are not limited here and can be selected according to actual needs.

[0046] In this embodiment, the display panel includes three-color sub-pixels 30. The three-color sub-pixels 30 are red pixels, blue pixels, and green pixels. The sub-pixels 30 are arranged in a matrix.

[0047] It should be understood that in other embodiments, the display panel may include sub-pixels 30 of one color, two colors, or four or more colors. The sub-pixels 30 may also be arranged in other ways.

[0048] The sub-pixel 30 includes an anode 31, a light-emitting layer 32, and a cathode 33 which are stacked in sequence. The cathode 33 is disposed between the light-emitting layer 32 and the encapsulation layer 40, and is disposed in contact with and is connected to the isolation structure 20. The cathode 33 of the sub-pixel 30 is disposed in contact with and is connected to the adjacent isolation structure 20, thereby realizing mutual electrical connection between the cathodes 33 of the sub-pixels 30, thereby realizing a mesh connection of the cathodes 33 of the sub-pixels 30, which is beneficial to the uniformity of the cathodes 33 of the sub-pixels 30.

[0049] The top surface of the encapsulation layer 40 is flush with the surface of the isolation structure 20 away from the pixel definition layer 10 . It can be understood that the top surface of the encapsulation layer 40 and the surface of the isolation structure 20 away from the pixel definition layer 10 are located in the same plane.

[0050] The isolation structure 20 surrounds at least one pixel opening 11. That is, one isolation structure 20 can surround one pixel opening 11, that is, one isolation structure 20 surrounds one sub-pixel 30. One isolation structure 20 can also surround two or more pixel openings 11, that is, one isolation structure 20 surrounds multiple sub-pixels 30. The number of pixel openings 11 surrounded by the isolation structure 20 is not limited here.

[0051] In this embodiment, one isolation structure 20 surrounds one pixel opening 11 .

[0052] The width of the cross section of the isolation structure 20 in the direction perpendicular to the pixel definition layer 10 is gradually reduced, and the orthographic projection of the isolation structure 20 on the pixel definition layer 10 is located within the surface where the pixel definition layer 10 and the isolation structure 20 are in contact, so that when the contact area between the isolation structure 20 and the pixel definition layer 10 remains unchanged, the end of the isolation structure 20 away from the pixel definition layer 10 will not block the vertical light emitted by the sub-pixel 30, which is beneficial to improving the light output efficiency of the sub-pixel 30.

[0053] Specifically, in the present embodiment, the isolation structure 20 includes a conductive layer 21, the cross section of the side wall of the conductive layer 21 in the direction perpendicular to the plane of the pixel definition layer 10 is a trapezoid, and the angle between the side wall of the conductive layer 21 and the upper surface of the pixel definition layer 10 covered by the corresponding conductive layer 21 is less than 90 degrees. The top surface of the encapsulation layer 40 is flush with the surface of the side of the conductive layer 21 away from the pixel definition layer 10.

[0054] Setting the angle between the side wall of the conductive layer 21 and the upper surface of the pixel definition layer 10 covered by the corresponding conductive layer 21 to be less than 90 degrees can facilitate the overlap of the cathode 33 of the sub-pixel 30 with the side wall of the conductive layer 21 to ensure good electrical connection between the sub-pixel 30 and the conductive layer 21. Secondly, the top surface of the encapsulation layer 40 is flush with the surface of the side of the conductive layer 21 away from the pixel definition layer 10, so that the height of the conductive layer 21 in the direction perpendicular to the pixel definition layer 10 is determined by the height of the encapsulation layer 40 and the height of the sub-pixel 30, which limits the height of the isolation structure 20. Since the height of the encapsulation layer 40 is not too thick, the height of the conductive layer 21 in the direction perpendicular to the pixel definition layer 10 will not be too large, which can further improve the light extraction efficiency of the sub-pixel 30.

[0055] It should be understood that since the conductive layer 21 includes a metal material, the light transmission performance is poor. The higher the height of the conductive layer 21 in the direction perpendicular to the pixel definition layer 10, the better the shielding effect of the non-vertical light emitted by the sub-pixel 30, making the light extraction efficiency of the sub-pixel 30 worse. That is, limiting the height of the conductive layer 21 is conducive to improving the light extraction efficiency of the sub-pixel 30.

[0056] The encapsulation layer 40 is used to protect the sub-pixel 30 from etching when the sub-pixel 30 is evaporated. The encapsulation layer 40 covers the sub-pixel 30, and the encapsulation layer 40 is arranged close to the side wall of the isolation structure 20 and in contact with the side wall of the isolation structure 20, further sealing the sub-pixel 30 to better protect the sub-pixel 30 from etching and water and oxygen. There is no restriction on the height and material of the encapsulation layer 40, which can be selected according to actual needs.

[0057] It should be noted that the encapsulation layer 40 in the present application is an etching protection layer 80 evaporated on the upper surface of the sub-pixel 30 in the prior art (see Figure 4 ), it can be understood that the encapsulation layer 40 of the present application selects the portion where the etching protection layer 80 covers the sub-pixel 30 and is located on the side of the isolation structure 20.

[0058] The display panel further includes an encapsulation layer 50, which covers the isolation structure 20 and the encapsulation layer 40, and a surface of the encapsulation layer 50 close to the pixel definition layer 10 is in contact with a surface of the isolation structure 20 away from the pixel definition layer 10. A surface of the encapsulation layer 50 close to the pixel definition layer 10 is also in contact with a surface of the encapsulation layer 40 away from the pixel definition layer 10. The material and height of the encapsulation layer 50 are not limited here, and are selected according to actual needs.

[0059] In this embodiment, the encapsulation layer 50 includes a first encapsulation layer 51 and a second encapsulation layer 52 which are stacked in sequence in a direction away from the pixel definition layer 10. The height of the first encapsulation layer 51 is greater than the height of the second encapsulation layer 52. The first encapsulation layer 51 is generally an organic material, and the second encapsulation layer 52 is generally an inorganic material.

[0060] The present application further includes a driving substrate 90 for driving the sub-pixel 30 to emit light. The driving substrate 90 is disposed on a side of the pixel definition layer 10 away from the isolation structure 20. The structure of the driving substrate 90 is not restricted too much here and is selected according to actual needs.

[0061] See also Figure 2 , Figure 2 It is a schematic diagram of the cross-sectional structure of the second embodiment of the display panel provided in the present application.

[0062] The structure of the second embodiment of the display panel provided in the present application is basically similar to that of the first embodiment of the display panel provided in the present application, except that the isolation structure 20 includes a conductive layer 21 and an insulating layer 22 disposed on the upper surface of the conductive layer 21 .

[0063] In this embodiment, the isolation structure 20 includes a conductive layer 21 and an insulating layer 22 disposed on the upper surface of the conductive layer 21. The orthographic projection of the insulating layer 22 on the conductive layer 21 is located inside the conductive layer 21. The top surface of the encapsulation layer 40 is flush with the surface of the insulating layer 22 away from the pixel definition layer 10.

[0064] The orthographic projection of the insulating layer 22 on the conductive layer 21 is located inside the conductive layer 21 , so that the insulating layer 22 will not block the vertical light emitted by the sub-pixel 30 , which is beneficial to improving the light extraction efficiency of the sub-pixel 30 .

[0065] The top surface of the encapsulation layer 40 is flush with the surface of the insulating layer 22 away from the pixel definition layer 10 , further limiting the height of the isolation structure 20 in a direction perpendicular to the plane of the pixel definition layer 10 , thereby further improving the light extraction efficiency of the sub-pixel 30 .

[0066] It should be understood that the light transmission effect of the insulating layer 22 is not good. The higher the height of the insulating layer 22 in the direction perpendicular to the pixel definition layer 10, the better the shielding effect of the non-vertical light emitted by the sub-pixel 30, making the light extraction efficiency of the sub-pixel 30 worse. That is, limiting the height of the isolation structure 20 is conducive to improving the light extraction efficiency of the sub-pixel 30.

[0067] The cathode 33 of the sub-pixel 30 overlaps the side wall of the conductive layer 21 to achieve mutual electrical connection between the sub-pixels 30. The encapsulation layer 40 covers the sub-pixel 30 and extends along the side wall of the isolation structure 20 to cover the side wall of the isolation structure 20. Specifically, the encapsulation layer 40 covers the side wall of the conductive layer 21 and the side wall of the insulating layer 22, and also covers a portion of the surface of the conductive layer 21 away from the pixel definition layer 10.

[0068] Compared with the first embodiment of the display panel provided in the present application, this embodiment can also improve the light extraction efficiency of the sub-pixel 30 .

[0069] See also Figures 3 to 5 , Figure 3 is a schematic flow chart of an embodiment of a method for preparing a display panel provided in the present application, Figure 4 yes Figure 3 A schematic structural diagram corresponding to an implementation method of steps S10 to S30 in FIG. Figure 5 yes Figure 3 A structural schematic diagram corresponding to another implementation method of steps S10 to S30.

[0070] The present application provides a method for preparing a display panel, which is used to prepare the above-mentioned display panel. The specific steps of the method for preparing the display panel are as follows:

[0071] S10: Provide a substrate to be packaged, the substrate to be packaged includes a pixel definition layer, multiple sub-pixels, a main structure, an eaves structure and an etching protection layer; the pixel definition layer has multiple pixel openings; multiple sub-pixels are arranged in the pixel openings in a one-to-one correspondence; the main structure protrudes from the pixel definition layer and surrounds the pixel openings; the eaves structure is arranged on the upper surface of the main structure and covers the main structure, and extends out of the main structure in a planar direction parallel to the pixel definition layer; the etching protection layer covers the eaves structure, the sub-pixels and the side walls of the main structure.

[0072] Specifically, a substrate to be packaged is provided. The substrate to be packaged includes a pixel definition layer 10, a plurality of sub-pixels 30, a main structure 60, an eaves structure 70, and an etching protection layer 80. The pixel definition layer 10 has a plurality of pixel openings 11. A plurality of sub-pixels 30 are arranged in the pixel openings 11 in a one-to-one correspondence. The main structure 60 is arranged protruding from the pixel definition layer 10 and surrounds the pixel openings 11. The eaves structure 70 is arranged on the upper surface of the main structure 60 and shields the main structure 60, and extends out of the main structure 60 in a plane direction parallel to the pixel definition layer 10. The etching protection layer 80 covers the eaves structure 70, the sub-pixels 30, and the sidewalls of the main structure 60.

[0073] The main structure 60 serves to isolate the sub-pixels 30 ; at the same time, the cathode 33 of the sub-pixel 30 overlaps with the adjacent main structure 60 to achieve electrical connection between the sub-pixel 30 and the adjacent main structure 60 , thereby achieving mutual electrical connection between the sub-pixels 30 .

[0074] The orthographic projection of the eaves structure 70 on the pixel definition layer 10 covers the orthographic projection of the main structure 60 on the pixel definition layer 10, and the edge of the eaves structure 70 is suspended relative to the main structure 60, so that when the sub-pixel 30 is evaporated, the evaporation angle of the sub-pixel 30 can be adjusted through the edge of the eaves structure 70, so that the cathode 33 of the sub-pixel 30 can cover the light-emitting layer 32 of the sub-pixel 30 and have a good overlap with the main structure 60, thereby achieving a good electrical connection between the sub-pixel 30 and the main structure 60.

[0075] The etching protection layer 80 is used to protect the sub-pixel 30 during the process of preparing the display panel. The etching protection layer 80 includes a non-conductive inorganic material. Specifically, the etching protection layer 80 includes a silicon-containing inorganic material, such as a SiNx inorganic material, where x is a non-zero natural number. The thickness of the etching protection layer 80 is not limited here and is selected according to actual needs.

[0076] It should be noted that the sub-pixel 30 in the present application is evaporated by removing the metal mask plate, mainly isolating the sub-pixel 30 through the main structure 60 and electrically connecting the sub-pixels 30 to each other through the main structure 60, and adjusting the evaporation angle of the sub-pixel 30 through the eaves structure 70 to achieve good electrical connection between the sub-pixel 30 and the main structure 60.

[0077] The main structure 60 surrounds at least one pixel opening 11. One main structure 60 may surround one pixel opening 11 or may surround a plurality of pixel openings 11.

[0078] In this embodiment, one main structure 60 surrounds one pixel opening 11 .

[0079] It should be noted that the substrate to be packaged further includes a driving substrate 90 . The driving substrate 90 is disposed on a side of the pixel definition layer 10 away from the main structure 60 , and is used to drive the sub-pixels 30 to emit light.

[0080] like Figure 4 As shown, in one embodiment, the main structure 60 includes a conductive portion 61, the side wall of the conductive portion 61 has a trapezoidal cross section in a direction perpendicular to the plane of the pixel definition layer 10, and the angle between the side wall of the conductive portion 61 and the upper surface of the pixel definition layer 10 covered by the corresponding conductive portion 61 is less than 90 degrees. The structural design of the conductive portion 61 is conducive to the attachment of the etching protection layer 80 to the side wall of the conductive portion 61, so that the etching protection layer 80 can better seal the sub-pixel 30; secondly, it is also conducive to the overlap of the cathode 33 of the sub-pixel 30 and the conductive portion 61, thereby facilitating a good electrical connection between the sub-pixel 30 and the conductive portion 61.

[0081] like Figure 5 As shown, in another embodiment, the main structure 60 includes a conductive portion 61 and an insulating portion 62 disposed on the upper surface of the conductive portion 61, the cross section of the insulating portion 62 in the plane direction perpendicular to the pixel definition layer 10 is a trapezoid, and the angle between the side wall of the insulating portion 62 and the upper surface of the conductive portion 61 covered by the corresponding insulating portion 62 is less than 90 degrees. The positive projection of the insulating portion 62 on the conductive portion 61 is located inside the conductive portion 61. Compared with the structural design in which the main structure 60 only includes the conductive portion 61, the height of the conductive portion 61 of the main structure 60 in the plane direction perpendicular to the pixel definition layer 10 can be relatively small. Similarly, the structural design of the insulating portion 62 can also facilitate the attachment of the etching protection layer 80 to the side wall of the insulating portion 62.

[0082] It should be understood that the main structure 60 needs to meet a certain height so that the cathode 33 of the sub-pixel 30 can be attached to the side wall of the main structure 60, and the etching protection layer 80 can be attached to the side wall of the main structure 60. When the main structure 60 includes the conductive layer 21 and the insulating portion 62, the insulating portion 62 can share a part of the height of the conductive layer 21, so that the height of the conductive layer 21 can be smaller.

[0083] S20: removing the eaves structure, and partially etching the protective layer to form an encapsulation layer, and partially etching the main structure to form an isolation structure; wherein the encapsulation layer covers the sub-pixels and is located on the side of the isolation structure; the top surface of the encapsulation layer is flush with the surface of the side of the isolation structure away from the pixel definition layer; the top surface of the encapsulation layer is configured as a side of the encapsulation layer away from the pixel definition layer and a surface that is in contact with the isolation structure.

[0084] Specifically, the eaves structure 70 is removed, and the protective layer 80 is partially etched to form the encapsulation layer 40, and the main structure 60 is partially etched to form the isolation structure 20. The encapsulation layer 40 covers the sub-pixel 30 and is located on the side of the isolation structure 20. The top surface of the encapsulation layer 40 is flush with the surface of the side of the isolation structure 20 away from the pixel definition layer 10. The top surface of the encapsulation layer 40 is configured as a side of the encapsulation layer 40 away from the pixel definition layer 10 and a surface that is in contact with the isolation structure 20.

[0085] That is to say, in the process of preparing the display panel, the present application realizes the isolation of the sub-pixels 30 and the mutual electrical connection between the sub-pixels 30 through the main structure 60 and the eaves structure 70, and then removes the eaves structure 70, and retains the conductive part in the main structure 60 so as not to affect the mutual electrical connection between the sub-pixels 30. This preparation method not only realizes the isolation of the sub-pixels 30, but also realizes the mutual electrical connection between the sub-pixels 30. At the same time, it avoids the eaves structure 70 from blocking the vertical light emitted by the sub-pixels 30, and reduces the height of the main structure 60 in the direction perpendicular to the pixel definition layer 10, which is conducive to improving the light extraction efficiency of the sub-pixels 30.

[0086] It should be understood that since the edge of the eaves structure 70 extends beyond the main structure 60 in a direction parallel to the pixel definition layer 10 , the eaves structure 70 will block part of the vertical light emitted by the sub-pixel 30 , thereby reducing the light output efficiency of the sub-pixel 30 .

[0087] In a specific embodiment, yellow light coating is used to block the light-emitting area of ​​the sub-pixel 30, and dry etching, wet etching and cleaning processes are used to partially etch the etching protection layer 80 to retain a portion of the etching protection layer 80 located on the side of the main structure 60 and covering the sub-pixel 30 to form an encapsulation layer 40; and the eaves structure 70 is completely removed, and the end of the main structure 60 in contact with the eaves structure 70 is partially etched to form an isolation structure 20, and the top surface of the encapsulation layer 40 is flush with the surface of the side of the isolation structure 20 away from the pixel definition layer 10.

[0088] It should be understood that other methods may also be used to etch the main structure 60 , the etching protection layer 80 and the eaves structure 70 .

[0089] The encapsulation layer 40 is disposed in contact with the sidewall of the isolation structure 20 to ensure that the encapsulation layer 40 can completely cover the sub-pixel 30 .

[0090] like Figure 4As shown, in one embodiment, the main structure 60 includes a conductive portion 61, the cross-section of the conductive portion 61 in a direction perpendicular to the plane of the pixel definition layer 10 is trapezoidal, and the angle between the side wall of the conductive portion 61 and the upper surface of the pixel definition layer 10 covered by the corresponding conductive portion 61 is less than 90 degrees.

[0091] The specific steps of removing the eaves structure in step S20, partially etching the protective layer to form an encapsulation layer, and partially etching the main structure to form an isolation structure include:

[0092] Step S21: removing the eaves structure, and partially etching the protective layer to form an encapsulation layer, and partially etching the conductive part to form an isolation structure; wherein the isolation structure includes a conductive layer, and the top surface of the encapsulation layer is flush with the surface of the conductive layer away from the pixel definition layer.

[0093] Specifically, the eaves structure 70 is removed, and the protective layer 80 is partially etched to form the encapsulation layer 40, and the conductive portion 61 is partially etched to form the isolation structure 20. The isolation structure 20 includes a conductive layer 21, and the top surface of the encapsulation layer 40 is flush with the surface of the conductive layer 21 away from the pixel definition layer 10.

[0094] like Figure 5 As shown, in another embodiment, the main structure 60 includes a conductive part 61 and an insulating part 62 arranged on the upper surface of the conductive part 61, the insulating part 62 has a trapezoidal cross-section in a direction perpendicular to the plane of the pixel definition layer 10, and the angle between the side wall of the insulating part 62 and the upper surface of the conductive part 61 covered by the corresponding insulating part 62 is less than 90 degrees.

[0095] The specific steps of removing the eaves structure in step S20, partially etching the protective layer to form an encapsulation layer, and partially etching the main structure to form an isolation structure include:

[0096] S22: removing the eaves structure, and partially etching the protective layer to form an encapsulation layer, and partially etching the insulating portion of the main structure to form an isolation structure; wherein the isolation structure includes a conductive layer and an insulating layer arranged on the upper surface of the conductive layer; the top surface of the encapsulation layer is arranged flush with the surface of the insulating layer on one side away from the pixel definition layer.

[0097] Specifically, the eaves structure 70 is removed, and the protective layer 80 is partially etched to form the encapsulation layer 40, and the insulating portion 62 of the main structure 60 is partially etched to form the isolation structure 20. The isolation structure 20 includes a conductive layer 21 and an insulating layer 22 disposed on the upper surface of the conductive layer 21. The top surface of the encapsulation layer 40 is flush with the surface of the insulating layer 22 away from the pixel definition layer 10.

[0098] In step S20, the eaves structure is removed, and the protective layer is partially etched to form an encapsulation layer, and the main structure is partially etched to form an isolation structure, and then the following steps are further included:

[0099] S30: preparing an encapsulation layer on a side of the isolation structure away from the pixel definition layer, wherein the encapsulation layer covers the isolation structure and the encapsulation layer.

[0100] Specifically, the encapsulation layer 50 is prepared on a side of the isolation structure 20 away from the pixel definition layer 10 , and the encapsulation layer 50 covers the isolation structure 20 and the encapsulation layer 40 .

[0101] In one embodiment, the encapsulation layer 50 includes a first encapsulation layer 51 and a second encapsulation layer 52 which are sequentially stacked in a direction away from the pixel definition layer 10. The height of the first encapsulation layer 51 is greater than the height of the second encapsulation layer 52. The first encapsulation layer 51 is generally an organic material, and the second encapsulation layer 52 is generally an inorganic material.

[0102] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0103] The above are only implementation methods of the present application, and are not intended to limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A display panel, characterized in that: include: a pixel definition layer having a plurality of pixel openings; An isolation structure protrudes from the pixel definition layer and surrounds the pixel opening; A plurality of sub-pixels are disposed in the pixel opening in a one-to-one correspondence; The sub-pixels are electrically connected to each other through the isolation structure; An encapsulation layer, covering the sub-pixel and located on a side of the isolation structure; The width of the cross section of the isolation structure in the direction perpendicular to the pixel definition layer gradually decreases, and the orthographic projection of the isolation structure on the pixel definition layer is located within the surface of the pixel definition layer in contact with the isolation structure; the top surface of the encapsulation layer is flush with the surface of the side of the isolation structure away from the pixel definition layer; the top surface of the encapsulation layer is configured as the side of the encapsulation layer away from the pixel definition layer and the surface in contact with the isolation structure; The display panel further includes an encapsulation layer, which covers the isolation structure and the encapsulation layer, and a surface of the encapsulation layer close to the pixel definition layer is in contact with a surface of the isolation structure away from the pixel definition layer.

2. The display panel according to claim 1, characterized in that: The isolation structure includes a conductive layer, the side wall of the conductive layer has a trapezoidal cross-section in a direction perpendicular to the plane of the pixel definition layer, and the angle between the side wall of the conductive layer and the upper surface of the pixel definition layer covered by the corresponding conductive layer is less than 90 degrees; the top surface of the encapsulation layer is flush with the surface of the conductive layer on the side away from the pixel definition layer.

3. The display panel according to claim 1, characterized in that: The isolation structure includes a conductive layer and an insulating layer arranged on the upper surface of the conductive layer; the orthographic projection of the insulating layer on the conductive layer is located within the conductive layer; the top surface of the encapsulation layer is arranged flush with the surface of the insulating layer on one side away from the pixel definition layer.

4. The display panel according to claim 1, characterized in that: The encapsulation layer is disposed close to and in contact with the sidewall of the isolation structure.

5. The display panel according to claim 1, characterized in that: The sub-pixel includes an anode, a light-emitting layer and a cathode which are stacked in sequence. The cathode is arranged between the light-emitting layer and the encapsulation layer, and is in contact with and conductive to the isolation structure.

6. A method for preparing a display panel, used for preparing the display panel according to any one of claims 1 to 5; characterized in that: include: Providing a substrate to be packaged, the substrate to be packaged comprising a pixel definition layer, a plurality of sub-pixels, a main body structure, an eaves structure and an etching protection layer; The pixel definition layer has a plurality of pixel openings; A plurality of sub-pixels are arranged in the pixel opening in a one-to-one correspondence; the main structure is arranged to protrude from the pixel definition layer and surround the pixel opening; the eaves structure is arranged on the upper surface of the main structure and covers the main structure, and extends out of the main structure in a plane direction parallel to the pixel definition layer; the etching protection layer covers the eaves structure, the sub-pixels and the sidewalls of the main structure; The eaves structure is removed, and the etching protection layer is partially etched to form the encapsulation layer, and the main structure is partially etched to form an isolation structure; wherein the encapsulation layer covers the sub-pixel and is located on the side of the isolation structure; the top surface of the encapsulation layer is flush with the surface of the side of the isolation structure away from the pixel definition layer; the top surface of the encapsulation layer is configured as the side of the encapsulation layer away from the pixel definition layer and the surface contacting the isolation structure; A packaging layer is prepared on a side of the isolation structure away from the pixel definition layer, and the packaging layer covers the isolation structure and the encapsulation layer.

7. The method for preparing a display panel according to claim 6, characterized in that: The main structure includes a conductive portion, the side wall of the conductive portion has a trapezoidal cross section in a direction perpendicular to the plane of the pixel definition layer, and the angle between the side wall of the conductive portion and the upper surface of the pixel definition layer covered by the corresponding conductive portion is less than 90 degrees; The step of removing the eaves structure, partially etching the etching protection layer to form the encapsulation layer, and partially etching the main structure to form an isolation structure comprises: The eaves structure is removed, and the etching protection layer is partially etched to form the encapsulation layer, and the conductive part is partially etched to form the isolation structure; wherein the isolation structure includes a conductive layer, and the top surface of the encapsulation layer is flush with the surface of the side of the conductive layer away from the pixel definition layer.

8. The method for preparing a display panel according to claim 6, characterized in that: The main structure comprises a conductive portion and an insulating portion disposed on an upper surface of the conductive portion, wherein a cross section of the insulating portion in a direction perpendicular to a plane of the pixel definition layer is a trapezoid, and an angle between a side wall of the insulating portion and an upper surface of the conductive portion covered by the insulating portion is less than 90 degrees; The step of removing the eaves structure, partially etching the etching protection layer to form the encapsulation layer, and partially etching the main structure to form an isolation structure comprises: The eaves structure is removed, and the etching protection layer is partially etched to form the encapsulation layer, and the insulating portion of the main structure is partially etched to form the isolation structure; wherein the isolation structure comprises a conductive layer and an insulating layer arranged on the upper surface of the conductive layer; the top surface of the encapsulation layer is arranged flush with the surface of the side of the insulating layer away from the pixel definition layer.

Images