Pumping assembly, thin film deposition equipment and method, storage medium

Abstract

The present invention provides an exhaust assembly, a thin film deposition device and method, and a computer-readable storage medium. The exhaust assembly includes a lower exhaust ring and an upper exhaust ring. The lower exhaust ring is located below a process chamber, and exhaust holes are provided thereunder, so as to perform annular exhaust through a plurality of first air holes arranged along the circumference of the lower exhaust ring. The upper exhaust ring is located above the lower exhaust ring, and its height is not higher than a wafer tray. A plurality of second air holes are provided along the circumference of the upper exhaust ring, so as to evenly exhaust air from above the wafer tray under the action of the annular exhaust.

Description

Technical Field

[0001] The present invention relates to the field of thin film deposition technology, and in particular to an exhaust component, a thin film deposition device, a thin film deposition method, and a computer-readable storage medium. Background Art

[0002] During the thin film deposition process, a spray plate is used to spray reaction gases from top to bottom onto the wafer placed on the heating plate for thin film deposition reaction. Usually, a vacuum ring is required in the process chamber to extract excess reaction gases in the process chamber to ensure stable and uniform thin film deposition.

[0003] Existing thin film deposition equipment mainly uses the side or bottom of the chamber to pump gas through the gas distribution holes on the pumping ring to pump the reacted gas to the tail gas treatment equipment. However, due to the influence of the single eccentric pumping hole, the gas distribution in the reaction chamber cannot be evenly distributed when the reacted gas flows out, resulting in uneven film on the wafer surface, affecting the quality of wafer film deposition.

[0004] In order to overcome the above-mentioned defects of the prior art, the art is in urgent need of a vacuum assembly and a thin film deposition technology for eliminating the influence of eccentric vacuum pumping of the vacuum ring, so as to improve the uniformity of gas distribution in the reaction chamber when the post-reaction gas is discharged through the vacuum hole, thereby improving the uniformity of the film thickness on the wafer surface. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to solve the above-mentioned defects existing in the prior art, the present invention provides a vacuum assembly, a thin film deposition device, a thin film deposition method, and a computer-readable storage medium, which can eliminate the influence of eccentric vacuum pumping of the vacuum ring to improve the uniformity of gas distribution in the reaction chamber when the post-reaction gas is discharged through the vacuum hole, thereby improving the uniformity of the film thickness on the wafer surface.

[0007] Specifically, the exhaust assembly provided according to the first aspect of the present invention includes a lower exhaust ring and an upper exhaust ring. The lower exhaust ring is located below the process chamber, and is provided with exhaust holes below it, so as to perform annular exhaust through a plurality of first air holes arranged along the circumference of the lower exhaust ring. The upper exhaust ring is located above the lower exhaust ring, and its height is not higher than the wafer tray. A plurality of second air holes are arranged along the circumference of the upper exhaust ring, which are used to evenly exhaust air from above the wafer tray under the action of the annular exhaust.

[0008] Further, in some embodiments of the present invention, the exhaust hole is eccentrically arranged on one side of the lower part of the process chamber. The distribution density and / or aperture of the plurality of first air holes decreases as they are away from the exhaust hole. The plurality of second air holes have the same aperture and are evenly distributed along the circumference of the upper exhaust ring.

[0009] Furthermore, in some embodiments of the present invention, the vacuum assembly further includes a lifting mechanism for adjusting the height of the upper vacuum ring to adjust the gas concentration distribution above the wafer tray.

[0010] Furthermore, in some embodiments of the present invention, the lifting mechanism is configured to: detect gas concentrations in the central area and edge area above the wafer tray; increase the height of the upper vacuum ring in response to the gas concentration in the central area above the wafer tray being lower than the gas concentration in the edge area; and reduce the height of the upper vacuum ring in response to the gas concentration in the central area above the wafer tray being higher than the gas concentration in the edge area.

[0011] Furthermore, in some embodiments of the present invention, the exhaust assembly further includes a film thickness detection module. The film thickness detection module is configured to: detect the film thickness of the central area and the edge area of ​​the wafer that has undergone the thin film deposition process; in response to the film thickness of the central area being less than the film thickness of the edge area, determine that the gas concentration in the central area above the wafer tray is less than the gas concentration in the edge area; and in response to the film thickness of the central area being greater than the film thickness of the edge area, determine that the gas concentration in the central area above the wafer tray is greater than the gas concentration in the edge area.

[0012] Further, in some embodiments of the present invention, a plurality of ejector pin holes are respectively provided on the bottom surface of the process chamber and the lower pumping ring, and the lifting mechanism includes a driving device, a C-shaped frame and a plurality of ejector pins. The plurality of ejector pins are respectively provided on the upper surface of the C-shaped frame, and pass through the plurality of ejector pin holes on the process chamber and the lower pumping ring to connect to the upper pumping ring. The C-shaped frame is connected to the driving device, and under the drive of the driving device, the plurality of ejector pins are used to drive the upper pumping ring to be lifted and lowered.

[0013] Furthermore, in some embodiments of the present invention, the driving device includes a motor and a ball screw. The first end of the ball screw is connected to the motor, and the second end of the ball screw is connected to the C-shaped frame, so as to convert the rotational motion output by the motor into the lifting motion of the C-shaped frame.

[0014] Furthermore, in some embodiments of the present invention, the lifting mechanism further comprises a bellows and / or a vacuum bolt. The bellows is located between the C-shaped frame and the process chamber, surrounding the ejector pin and the ejector pin through hole on the bottom surface of the process chamber to improve the air tightness of the process chamber. The ejector pin is connected to the upper pumping ring via the vacuum bolt.

[0015] In addition, the thin film deposition equipment provided according to the second aspect of the present invention includes: a process chamber, which includes a wafer tray and an exhaust hole, wherein the wafer tray is used to carry the wafer to be processed for thin film deposition reaction, and the exhaust hole is eccentrically arranged at the lower part of the process chamber, and is used to exhaust gas from the process chamber; and the exhaust component as described in the first aspect of the present invention is used to first perform annular exhaust through a plurality of first exhaust holes arranged along the circumference of the lower exhaust ring, and then under the action of the annular exhaust, evenly exhaust gas from above the wafer tray through a plurality of second exhaust holes arranged along the circumference of the upper exhaust ring.

[0016] In addition, the thin film deposition method provided according to the third aspect of the present invention includes the following steps: providing reaction gas to the top of the wafer tray inside the process chamber to perform a thin film deposition reaction on the wafers on the wafer tray; and through the exhaust assembly as described in the first aspect of the present invention, first performing annular exhaust through a plurality of first air holes arranged along the circumference of the lower exhaust ring, and then under the action of the annular exhaust, evenly exhausting from above the wafer tray through a plurality of second air holes arranged along the circumference of the upper exhaust ring.

[0017] Furthermore, in some embodiments of the present invention, the thin film deposition method also includes the following steps: detecting the gas concentrations in the central area and the edge area above the wafer tray; in response to the gas concentration in the central area above the wafer tray being lower than the gas concentration in the edge area, increasing the height of the upper pumping ring; and in response to the gas concentration in the central area above the wafer tray being higher than the gas concentration in the edge area, reducing the height of the upper pumping ring.

[0018] Furthermore, in some embodiments of the present invention, the step of detecting the gas concentration in the central area and the edge area above the wafer tray includes: detecting the film thickness in the central area and the edge area of ​​the wafer that has undergone a thin film deposition process; in response to the film thickness in the central area being smaller than the film thickness in the edge area, determining that the gas concentration in the central area above the wafer tray is smaller than the gas concentration in the edge area; and in response to the film thickness in the central area being larger than the film thickness in the edge area, determining that the gas concentration in the central area above the wafer tray is larger than the gas concentration in the edge area.

[0019] In addition, the computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions, which, when executed by a processor, implement the thin film deposition method according to the third aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0021] Figure 1 A schematic diagram of the split structure of a thin film deposition device provided according to some embodiments of the present invention is shown.

[0022] Figure 2 A schematic diagram of the overall structure of a thin film deposition device provided according to some embodiments of the present invention is shown.

[0023] Figure 3 A schematic structural diagram of a lower air pumping ring provided according to some embodiments of the present invention is shown.

[0024] Figure 4 A schematic structural diagram of an upper air pumping ring provided according to some embodiments of the present invention is shown.

[0025] Figure 5 A schematic structural diagram of a C-shaped frame provided according to some embodiments of the present invention is shown.

[0026] Figure 6 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown.

[0027] Figure 7 A schematic diagram of a gas flow path of a gas extraction assembly provided according to some embodiments of the present invention is shown.

[0028] Reference numerals:

[0029] 10 Process Chamber

[0030] 101 Wafer Tray

[0031] 102 Ejector pin via

[0032] 20 Lower pumping ring

[0033] 201 First air hole

[0034] 202 Ejector pin via

[0035] 30 Upper pumping ring

[0036] 301 Second air hole

[0037] 40 Lifting mechanism

[0038] 401 Drive unit

[0039] 402 C-shaped frame

[0040] 403 Multiple Ejectors DETAILED DESCRIPTION

[0041] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0042] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0044] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0045] As shown above, the existing thin film deposition equipment uses the side or bottom extraction of the chamber to extract the reacted gas to the tail gas treatment equipment through the gas distribution holes on the exhaust ring. However, due to the influence of the single eccentric exhaust hole, when the reacted gas flows out, the gas distribution in the reaction chamber cannot be evenly distributed, resulting in uneven film on the wafer surface, affecting the quality of wafer thin film deposition.

[0046] In order to overcome the above-mentioned defects of the prior art, the present invention provides a vacuum assembly, a thin film deposition device, a thin film deposition method, and a computer-readable storage medium, which can eliminate the influence of eccentric vacuuming of a vacuum ring to improve the uniformity of gas distribution in the reaction chamber when the post-reaction gas is discharged through the vacuum hole, thereby improving the uniformity of the film thickness on the wafer surface.

[0047] In some non-limiting embodiments, the thin film deposition method provided by the third aspect of the present invention can be implemented via the thin film deposition device provided by the second aspect of the present invention, and the exhaust assembly provided by the first aspect of the present invention can be configured in the thin film deposition device provided by the second aspect of the present invention. Specifically, the thin film deposition device provided by the second aspect of the present invention can be configured with a memory and a processor. The memory includes but is not limited to the computer-readable storage medium provided by the fourth aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the thin film deposition method provided by the third aspect of the present invention.

[0048] Please refer to Figure 1 to Figure 4 . Figure 1 A schematic diagram of the split structure of a thin film deposition device provided according to some embodiments of the present invention is shown. Figure 2 A schematic diagram of the overall structure of a thin film deposition device provided according to some embodiments of the present invention is shown. Figure 3 A schematic structural diagram of a lower air pumping ring provided according to some embodiments of the present invention is shown. Figure 4 A schematic structural diagram of an upper air pumping ring provided according to some embodiments of the present invention is shown.

[0049] like Figure 1 and Figure 2As shown, the thin film deposition equipment includes a process chamber 10 and an exhaust assembly. In some non-limiting embodiments, the process chamber 10 includes a wafer tray 101 and an exhaust hole. The wafer tray 101 is used to carry the wafer to be processed for thin film deposition reaction. The exhaust hole is eccentrically arranged at the lower part of the process chamber 10 for exhausting gas from the process chamber 10.

[0050] Furthermore, if Figure 3 and Figure 4 As shown, the above-mentioned exhaust assembly includes a lower exhaust ring 20 and an upper exhaust ring 30. The lower exhaust ring 20 is located below the upper exhaust ring 30 and above the exhaust holes in the process chamber 10, and its ring body is provided with a plurality of first air holes 201, so that the eccentrically arranged exhaust holes can perform annular exhaust through the plurality of first air holes 201. The upper exhaust ring 30 is located above the lower exhaust ring 20, and its height is not higher than the wafer tray 101, wherein a plurality of second air holes 301 are provided along the circumference of the upper exhaust ring 30, which are used to evenly exhaust air from above the wafer tray 101 under the action of the annular exhaust of the lower exhaust ring 20. By adopting a double-layer exhaust ring structure, the present invention can form two layers of flow chambers in the exhaust assembly, so that the reaction gas flowing on the surface of the wafer is more uniform, thereby ensuring the uniformity of the reaction gas flow above the wafer.

[0051] Further, in some non-limiting embodiments, the exhaust hole can be eccentrically arranged on one side of the lower part of the process chamber 10. The distribution density and / or aperture of the plurality of first through-holes 201 arranged on the lower exhaust ring 20 can decrease as they are away from the exhaust hole to improve the uniformity of the annular exhaust. Correspondingly, the plurality of second through-holes 301 arranged on the upper exhaust ring 30 can have the same aperture and be evenly distributed along the circumference of the upper exhaust ring 30, thereby avoiding the uneven distribution density and / or aperture size of the through-holes, which affects the plasma intensity distribution and / or electric field intensity distribution in the reaction area above the wafer tray.

[0052] In addition, please refer to Figure 5 . Figure 5 A schematic structural diagram of a C-shaped frame provided according to some embodiments of the present invention is shown.

[0053] like Figure 1 to Figure 5As shown, the exhaust assembly may further include a lifting mechanism 40. The lifting mechanism 40 may include a driving device 401, a C-shaped frame 402, and a plurality of ejector pins 403. The plurality of ejector pins 403 may be respectively disposed on the upper surface of the C-shaped frame 402, and sequentially pass through a plurality of ejector pin holes 102 disposed on the bottom surface of the process chamber 10, and a plurality of ejector pin holes 202 disposed on the exhaust ring 20, so as to connect to the upper exhaust ring 30. The C-shaped frame 402 is connected to the driving device 401, and can be driven by the driving device 401 to drive the upper exhaust ring 30 to be lifted and lowered via the plurality of ejector pins 403, so as to adjust the height of the reaction area between the wafer tray 101 and the shower head 50, thereby adjusting the concentration of the reaction gas in the reaction area.

[0054] In some embodiments, the driving device 401 may include a motor and a ball screw. The first end of the ball screw is connected to the motor, and the second end of the ball screw is connected to the C-shaped frame 402, for converting the rotational motion output by the motor into the lifting motion of the C-shaped frame 402.

[0055] In addition, in some embodiments, the lifting mechanism 40 may further include a bellows and / or a vacuum bolt. The bellows is located between the C-shaped frame 402 and the process chamber 10, surrounding the ejector pins and the ejector pin through hole 102 on the bottom surface of the process chamber 10, so as to improve the airtightness of the process chamber 10. The plurality of ejector pins 403 may be connected to the upper pumping ring 30 via vacuum bolts respectively.

[0056] The following will describe the working principle of the above-mentioned thin film deposition equipment and in conjunction with some embodiments of the thin film deposition method. Those skilled in the art will understand that these embodiments of the thin film deposition method are only some non-limiting implementation methods provided by the present invention, and are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the thin film deposition equipment. Similarly, the thin film deposition method is also only some non-limiting implementation methods provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these thin film deposition methods.

[0057] Please refer to Figure 1 , Figure 2 , Figure 6 and Figure 7 . Figure 6 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown. Figure 7 A schematic diagram of a gas flow path of a gas extraction assembly provided according to some embodiments of the present invention is shown.

[0058] like Figure 1 , Figure 2 and Figure 6As shown, during the thin film deposition process, the thin film deposition equipment can first provide reaction gas to the top of the wafer tray 101 inside the process chamber 10, and then evenly extract gas from the top of the wafer tray 101 through the exhaust component to promote the continuous flow of reaction gas on the wafer surface, thereby performing a continuous thin film deposition reaction on the wafer on the wafer tray 101. At this time, Figure 7 As shown, the exhaust holes eccentrically arranged at the bottom of the process chamber 10 can first perform annular exhaust through a plurality of first air holes 201 arranged circumferentially along the lower exhaust ring 20, and then, under the action of the annular exhaust, exhaust is uniformly extracted from above the wafer tray 101 through a plurality of second air holes 301 arranged circumferentially along the upper exhaust ring 30, thereby improving the uniformity of gas distribution in the reaction chamber when the reacted gas is discharged through the exhaust holes, so as to improve the uniformity of the film thickness on the wafer surface.

[0059] Furthermore, based on the hardware configuration of the above-mentioned lifting mechanism 40, the thin film deposition equipment can preferably detect the gas concentration in the central area and the edge area above the wafer tray 101 during the thin film deposition process, and adjust the height of the upper vacuum ring 30 according to the gas concentration in the central area and the edge area above the wafer tray 101.

[0060] Specifically, in some embodiments, the gas concentration can be realized by detecting the film thickness of the central area and the edge area of ​​the wafer that has undergone the thin film deposition process. In response to the detection result that the film thickness of the central area is less than the film thickness of the edge area, the thin film deposition device can determine that the gas concentration of the central area above the wafer tray 101 is less than the gas concentration of the edge area. Conversely, in response to the detection result that the film thickness of the central area is greater than the film thickness of the edge area, the thin film deposition device can determine that the gas concentration of the central area above the wafer tray 101 is greater than the gas concentration of the edge area.

[0061] Afterwards, in response to the gas concentration in the central area above the wafer tray 101 being lower than the gas concentration in the edge area, the thin film deposition device can increase the height of the upper exhaust ring 30 via the above-mentioned lifting mechanism 40 to reduce the gas concentration in the edge area above the wafer tray 101. Conversely, in response to the gas concentration in the central area above the wafer tray 101 being higher than the gas concentration in the edge area, the thin film deposition device can reduce the height of the upper exhaust ring 30 via the above-mentioned lifting mechanism 40 to increase the gas concentration in the edge area above the wafer tray 101. In this way, the present invention can adjust the gas concentration in the central area above the wafer tray 101 to be lower than the gas concentration in the edge area by adjusting the height of the upper exhaust ring 30 without affecting the uniformity of exhaust, thereby further improving the uniformity of the film thickness on the wafer surface.

[0062] Those skilled in the art will understand that the above-mentioned embodiment of determining the gas concentration in the central area and the edge area above the wafer tray 101 by detecting the film thickness is only a non-limiting implementation mode provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a preferred solution for preventing plasma from affecting the measurement accuracy of the gas concentration sensor and preventing the gas concentration sensor from affecting the plasma distribution, but is not intended to limit the scope of protection of the present invention.

[0063] Optionally, in other embodiments that do not involve extreme reaction conditions such as plasma, the thin film deposition equipment can also directly detect the gas concentration in the central area and edge area above the wafer tray 101 via multiple gas concentration sensors arranged above the wafer tray 101, so as to achieve the same technical effect of gas concentration detection and height adjustment of the upper vacuum ring 30.

[0064] In summary, the above-mentioned vacuum assembly, thin film deposition equipment, thin film deposition method, and computer-readable storage medium provided by the present invention can eliminate the influence of eccentric vacuuming of the vacuum ring to improve the uniformity of gas distribution in the reaction chamber when the post-reaction gas is discharged through the vacuum hole, thereby improving the uniformity of the film thickness on the wafer surface.

[0065] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0066] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vacuum assembly, characterized in that: include: A lower pumping ring is located below the process chamber and is provided with pumping holes thereunder, so as to perform annular pumping through a plurality of first air holes arranged along the circumference of the lower pumping ring; an upper air pumping ring, located above the lower air pumping ring, and having a height no higher than the wafer tray, wherein a plurality of second air holes are provided along the circumference of the upper air pumping ring, for uniformly pumping air from above the wafer tray under the action of the annular air pumping; and The lifting mechanism is used to adjust the height of the upper air pumping ring to adjust the gas concentration distribution above the wafer tray, comprising a driving device, a C-shaped frame and a plurality of ejector pins, wherein a plurality of ejector pin through-holes are respectively provided on the bottom surface of the process chamber and the lower air pumping ring, the plurality of ejector pins are respectively provided on the upper surface of the C-shaped frame, pass through the plurality of ejector pin through-holes on the process chamber and the lower air pumping ring to connect to the upper air pumping ring, the C-shaped frame is connected to the driving device, and driven by the driving device, the upper air pumping ring is driven to be lifted and lowered via the plurality of ejector pins, the lifting mechanism is configured to: detect the gas concentrations in the central area and the edge area above the wafer tray; in response to the gas concentration in the central area above the wafer tray being less than the gas concentration in the edge area, increase the height of the upper air pumping ring; and in response to the gas concentration in the central area above the wafer tray being greater than the gas concentration in the edge area, reduce the height of the upper air pumping ring.

2. The air extraction assembly according to claim 1, characterized in that: The exhaust hole is eccentrically arranged on one side of the lower part of the process chamber, the distribution density and / or aperture of the plurality of first air holes decreases as they move away from the exhaust hole, and the plurality of second air holes have the same aperture and are evenly distributed along the circumference of the upper exhaust ring.

3. The air extraction assembly according to claim 1, characterized in that: The device further comprises a film thickness detection module, wherein the film thickness detection module is configured as follows: Detect the film thickness in the center and edge areas of the wafer after the thin film deposition process; In response to the film thickness in the central region being smaller than the film thickness in the edge region, determining that the gas concentration in the central region above the wafer tray is smaller than the gas concentration in the edge region; and In response to the film thickness in the central area being greater than the film thickness in the edge area, it is determined that the gas concentration in the central area above the wafer tray is greater than the gas concentration in the edge area.

4. The air extraction assembly according to claim 1, characterized in that: The driving device includes a motor and a ball screw, wherein the first end of the ball screw is connected to the motor, and the second end of the ball screw is connected to the C-shaped frame, so as to convert the rotational motion output by the motor into the lifting motion of the C-shaped frame.

5. The air extraction assembly according to claim 1, characterized in that: The lifting mechanism also includes a bellows and / or a vacuum bolt, wherein: The bellows is located between the C-shaped frame and the process chamber, surrounding the ejector pin and the ejector pin through hole on the bottom surface of the process chamber to improve the airtightness of the process chamber. The ejector pin is connected to the upper pumping ring via the vacuum bolt.

6. A thin film deposition device, characterized in that: include: A process chamber, comprising a wafer tray and an exhaust hole, wherein the wafer tray is used to carry wafers to be processed for thin film deposition reaction, and the exhaust hole is eccentrically arranged at the lower part of the process chamber for exhausting gas from the process chamber; as well as The exhaust assembly as described in any one of claims 1 to 5 is used to first perform annular exhaust through a plurality of first air holes arranged along the circumference of the lower exhaust ring, and then, under the action of the annular exhaust, evenly exhaust air from above the wafer tray through a plurality of second air holes arranged along the circumference of the upper exhaust ring.

7. A thin film deposition method, characterized in that: The following steps are involved: Providing a reaction gas above a wafer tray in a process chamber to perform a thin film deposition reaction on the wafer on the wafer tray; Through the exhaust assembly according to any one of claims 1 to 6, annular exhaust is first performed through a plurality of first air holes circumferentially arranged along the lower exhaust ring of the exhaust assembly, and then, under the action of the annular exhaust, air is uniformly exhausted from above the wafer tray through a plurality of second air holes circumferentially arranged along the upper exhaust ring of the exhaust assembly; Detecting gas concentrations in a central area and an edge area above the wafer tray; In response to the gas concentration in the central area above the wafer tray being lower than the gas concentration in the edge area, increasing the height of the upper pumping ring; and In response to the gas concentration in the central area above the wafer tray being greater than the gas concentration in the edge area, the height of the upper pumping ring is reduced.

8. The thin film deposition method according to claim 7, characterized in that: The step of detecting the gas concentration in the central area and the edge area above the wafer tray comprises: Detect the film thickness in the center and edge areas of the wafer after the thin film deposition process; In response to the film thickness in the central region being smaller than the film thickness in the edge region, determining that the gas concentration in the central region above the wafer tray is smaller than the gas concentration in the edge region; and In response to the film thickness in the central area being greater than the film thickness in the edge area, it is determined that the gas concentration in the central area above the wafer tray is greater than the gas concentration in the edge area.

9. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the thin film deposition method according to claim 7 or 8 is implemented.

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