Intelligent power modules and electronic devices

Abstract

The present invention discloses an intelligent power module and an electronic device, wherein the intelligent power module comprises: a driving pad, wherein the driving pad comprises a high-voltage side driving pad, and a high-voltage driving chip is arranged on the high-voltage side driving pad; a high-side driving suspension power supply voltage pin; a high-side driving chip power supply voltage pin, wherein the high-side driving chip power supply voltage pin is arranged along the periphery of the high-voltage side driving pad, and a bootstrap pad is arranged on the high-side driving chip power supply voltage pin; a bootstrap chip, wherein the bootstrap chips are three and arranged in a bootstrap pad, and the substrates of the three bootstrap chips are constructed into an integral part, so that the three adjacent bootstrap chips are close to each other and integrated into one. Thus, not only the reliability and robustness of the bootstrap chip can be improved, but also the total area of ​​the three bootstrap chips can be reduced, which is beneficial to the miniaturization of the intelligent power module, and the number of dicing processes and the number of core loading can be reduced, so as to improve the operation efficiency and reduce the cost.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an intelligent power module and electronic equipment. Background Art

[0002] Intelligent power modules containing boost diodes usually use N-type semiconductor materials as substrates, and a P-type semiconductor material layer is set on the front to form a boost diode in the intelligent power module. The N substrate is welded on the pin pad used to connect the high-side driver floating supply voltage, and the P pole is connected to the pin used to connect the high-side driver chip supply voltage through a wire.

[0003] In the prior art, the setting of the boost diode makes the chip position close to the edge of the product plastic package module. When subjected to stress and thermal stress, the chip and the module bootstrap pad are prone to delamination, affecting the robustness and reliability of the product. In addition, the pad position where the boost diode is mounted needs to be welded to the electrode wire of the driver chip connected to the high-side drive suspension supply voltage. The solder overflow of the boost diode will affect the wire bonding effect. Usually, a groove is designed between the bootstrap diode connection position and the wire bonding position to block the solder overflow, increasing the manufacturing cost of the bootstrap pad. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide an intelligent power module that is not only more robust and reliable, but also can be miniaturized and has higher production and packaging efficiency.

[0005] The present invention further provides an electronic device.

[0006] According to an embodiment of the present invention, an intelligent power module includes: a driving pad, the driving pad includes a high-voltage side driving pad, a high-voltage driving chip is arranged on the high-voltage side driving pad; a high-side driving floating power supply voltage pin, the high-side driving floating power supply voltage pin and the high-voltage side driving pad are arranged at intervals in the first direction, and the high-side driving floating power supply voltage pin is used to connect the high-side driving floating power supply voltage; a high-side driving chip power supply voltage pin, the high-side driving chip power supply voltage pin is arranged at intervals between the high-voltage side driving pad and the high-side driving floating power supply voltage pin in the first direction, the high-side driving chip power supply voltage pin is extended along the periphery of the high-voltage side driving pad and is used to connect the high-side driving chip power supply voltage, and a bootstrap pad is arranged on the high-side driving chip power supply voltage pin; a bootstrap chip, the bootstrap chips are three and arranged in one bootstrap pad, and the substrates of the three bootstrap chips are constructed as an integrated piece, so that the three adjacent bootstrap chips are close to each other and integrated into one.

[0007] Therefore, by setting a bootstrap pad on the power supply voltage pin of the high-side driver chip, there are three bootstrap chips and they are set in one bootstrap pad, and the substrates of the three bootstrap chips are constructed into an integrated piece, so that the three adjacent bootstrap chips are close to each other and integrated into one. This can not only improve the reliability and robustness of the bootstrap chip, but also reduce the total area of ​​the three bootstrap chips, which is conducive to the miniaturization of the intelligent power module, and can also reduce the number of dicing processes and the number of core loading times, thereby improving operating efficiency and reducing costs.

[0008] In some examples of the present invention, three adjacent bootstrap chips are not cut through the substrates between them, but are attached to each other and integrated into one.

[0009] In some examples of the present invention, the bootstrap chip includes a P-type anode layer and an N-type cathode layer, the P-type anode layer is the substrate of the bootstrap chip, the P-type anode layers of the three bootstrap chips are constructed as an integral piece and welded to the bootstrap pad, and the N-type cathode layer is arranged on the side of the P-type anode layer away from the bootstrap pad.

[0010] In some examples of the present invention, a guard ring is provided between the N-type cathode layers of the three adjacent bootstrap chips.

[0011] In some examples of the present invention, the guard ring is a P-type guard ring.

[0012] In some examples of the present invention, the ion doping concentration of the P-type guard ring is higher than the ion doping concentration of the P-type anode layer.

[0013] In some examples of the present invention, a surface of the guard ring facing away from the substrate is flush with a surface of the N-type cathode layer facing away from the substrate.

[0014] In some examples of the present invention, the bootstrap chip further includes a resistor, and the resistor is disposed on a side of the N-type cathode layer away from the P-type anode layer.

[0015] In some examples of the present invention, the three bootstrap chips are arranged in the second direction, the length of the resistor in the second direction is smaller than the N-type cathode layer, and the two ends of the resistor in the second direction are respectively spaced apart from the guard rings on both sides of the N-type cathode layer in the second direction, wherein the second direction and the first direction are perpendicular to each other.

[0016] An electronic device according to an embodiment of the present invention includes: the above-mentioned intelligent power module.

[0017] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0019] Figure 1 is a partial schematic diagram of an intelligent power module according to an embodiment of the present invention;

[0020] Figure 2 yes Figure 1 Schematic diagram of area A in the middle;

[0021] Figure 3 is a schematic diagram of partial connection between a single bootstrap chip and a bootstrap pad according to an embodiment of the present invention;

[0022] Figure 4 is a schematic diagram of three bootstrap chips integrated into one according to an embodiment of the present invention;

[0023] Figure 5 is a circuit connection diagram of an intelligent power module according to an embodiment of the present invention.

[0024] Reference numerals:

[0025] 100. Intelligent power module;

[0026] 10. Driving pad; 11. High-voltage side driving pad; 12. High-voltage driving chip; 13. Low-voltage side driving pad; 14. Low-voltage driving chip;

[0027] 20. High-side drive floating supply voltage pin;

[0028] 30. High-side driver chip supply voltage pin; 31. Bootstrap pad; 311. Frame;

[0029] 40. Bootstrap chip; 41. P-type anode layer; 42. N-type cathode layer; 43. Guard ring; 44. Resistor;

[0030] 50. High-side drive floating power supply ground pin;

[0031] 60. Solder;

[0032] 70. Power pad; 71. High-voltage side power pad; 72. High-voltage power chip; 73. Low-voltage side power pad; 74. Low-voltage power chip;

[0033] 80. Power side pin. DETAILED DESCRIPTION

[0034] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0035] Reference below Figure 1-Figure 5 The intelligent power module 100 according to the embodiment of the present invention is described. The intelligent power module 100 can be applied to electronic devices.

[0036] Combination Figure 1 , Figure 2 and Figure 5 As shown, the intelligent power module 100 according to the present invention may mainly include: a driving pad 10 , a high-side driving floating supply voltage pin 20 , a high-side driving chip supply voltage pin 30 and a bootstrap chip 40 .

[0037] Combination Figure 1 and Figure 2 As shown, the driving pad 10 may include a high-voltage side driving pad 11, on which a high-voltage driving chip 12 is arranged, a high-side driving floating supply voltage pin 20 and the high-voltage side driving pad 11 are spaced apart in the first direction, a high-side driving chip supply voltage pin 30 is located between the high-voltage side driving pad 11 and the high-side driving floating supply voltage pin 20 in the first direction, and the high-side driving chip supply voltage pin 30 is extended along the periphery of the high-voltage side driving pad 11.

[0038] Specifically, the driving pad 10 mainly provides a welding position for the driving chip on the intelligent power module 100 to ensure the reliability of the setting of the driving chip on the intelligent power module 100. The driving pad 10 may include a high-voltage side driving pad 11 and a low-voltage side driving pad 13 arranged at intervals in the first direction. The high-voltage side driving pad 11 is provided with a high-voltage driving chip 12, and the low-voltage side driving pad 13 is provided with a low-voltage driving chip 14, so that the basic structure of the intelligent power module 100 can be formed, and the normal operation of the intelligent power module 100 can be ensured. In addition, in order to ensure the robustness and reliability of the high-voltage driving chip 12, the high-voltage side driving pad 11 can be set in the middle position of the intelligent power module 100. The high-side driving suspension supply voltage pin 20 can be used to connect the high-side driving suspension supply voltage, so as to facilitate the connection of the intelligent power module 100 with the external circuit. The high-side driving chip supply voltage pin 30 can be used to connect the high-side driving chip supply voltage, so as to facilitate the connection of the intelligent power module 100 with the external circuit.

[0039] Furthermore, the high-side drive floating supply voltage pin 20 and the high-voltage side drive pad 11 are spaced apart in the first direction, and the high-side drive chip supply voltage pin 30 is spaced apart in the first direction between the high-voltage side drive pad 11 and the high-side drive floating supply voltage pin 20. This not only facilitates the setting of the high-side drive floating supply voltage pin 20, the high-side drive chip supply voltage pin 30 and the high-voltage side drive pad 11, but also ensures that the high-side drive floating supply voltage pin 20, the high-side drive chip supply voltage pin 30 and the high-voltage side drive pad 11 are independent of each other in the intelligent power module 100, ensures that the circuits in the intelligent power module 100 are normally connected, prevents short circuits in the intelligent power module 100, and ensures that the intelligent power module 100 operates normally.

[0040] Furthermore, the high-side driver chip power supply voltage pin 30 is extended along the periphery of the high-voltage side driver pad 11. In this way, the high-side driver chip power supply voltage pin 30 can be extended from between the high-voltage side driver pad 11 and the high-side driver floating power supply voltage pin 20 to the edge while improving the compactness of the arrangement between the high-side driver chip power supply voltage pin 30 and the high-voltage side driver pad 11, thereby facilitating the high-side driver chip power supply voltage pin 30 to connect to the high-side driver chip power supply voltage.

[0041] Combination Figure 1 , Figure 2 and Figure 5 As shown, a bootstrap pad 31 is provided on the high-side driver chip power supply voltage pin 30, there are three bootstrap chips 40 and they are arranged in one bootstrap pad 31, and the substrates of the three bootstrap chips 40 are constructed as an integral part so that the three adjacent bootstrap chips 40 are close to each other and integrated into one.

[0042] Specifically, by setting a bootstrap pad 31 on the high-side driver chip power supply voltage pin 30, the bootstrap pad 31 can provide a stable and reliable setting position for the three bootstrap chips 40, so that the bootstrap chip 40 is set between the high-voltage side driver pad 11 and the high-side driver floating power supply voltage pin 20. In this way, the bootstrap chip 40 is electrically connected to the high-voltage side driver pad 11 and the high-side driver floating power supply voltage pin 20 at the same time, so that the high-voltage driver chip 12 can realize the bootstrap boosting function through the setting of the bootstrap chip 40. The bootstrap chip 40 can be set close to the high-voltage side driver pad 11, so that the bootstrap chip 40 can be set close to the middle in the intelligent power module 100. Compared with the prior art in which the boost diode is set to make the chip position close to the edge of the product plastic package module, the bootstrap chip is delaminated with the bootstrap pad when subjected to stress and thermal stress. In this way, the structural reliability of the bootstrap chip 40 on the intelligent power module 100 can be improved, and the robustness of the bootstrap chip 40 in the intelligent power module 100 can be improved.

[0043] Among them, there are three high-side drive floating power supply voltage pins 20, which are defined perpendicular to the second direction and perpendicular to the first direction. The three high-side drive floating power supply voltage pins 20 are arranged at intervals in the second direction and correspond to the U phase, V phase and W phase of the high-side drive floating power supply voltage respectively. The three high-side drive floating power supply voltage pins 20 are respectively electrically connected to the three bootstrap chips 40 through wires, and the three high-side drive floating power supply voltage pins 20 are all electrically connected to the high-voltage drive chip 12 through wires.

[0044] In addition, the intelligent power module 100 is also provided with a plurality of high-side drive suspension power supply ground pins 50, and the plurality of high-side drive suspension power supply ground pins 50 and the three high-side drive suspension power supply voltage pins 20 are sequentially arranged in a second direction and spaced apart to form the basic structure of the intelligent power module 100, and the plurality of high-side drive suspension power supply ground pins 50 are electrically connected to the high-voltage drive chip 12 through wires to ensure that the intelligent power module 100 functions normally. The shape of the high-side drive suspension power supply ground pin 50 on the intelligent power module 100 corresponds to the shape change of the high-side drive suspension power supply voltage pin 20 to improve the structural compactness of the intelligent power module 100.

[0045] Combination Figure 1 As shown, the intelligent power module 100 may also include a power pad 70, which is arranged on a side of the driving pad 10 in the second direction away from the bootstrap pad 31. The power pad 70 mainly provides a welding position for the power chip on the intelligent power module 100 to ensure the reliability of the setting of the power chip on the intelligent power module 100. The power pad 70 may include a high-voltage side power pad 71 and a low-voltage side power pad 73. The high-voltage side power pad 71 and the low-voltage side power pad 73 are spaced apart in the first direction. A high-voltage power chip 72 is arranged on the high-voltage side power pad 71, and a low-voltage power chip 74 is arranged on the low-voltage side power pad 73.

[0046] Among them, there is one high-voltage side power pad 71, three high-voltage power chips 72, the three high-voltage power chips 72 are all arranged on the high-voltage side power pad 71 and are arranged at intervals in the first direction, and the three high-voltage power chips 72 are all electrically connected to the high-voltage driver chip 12. And, there are three low-voltage side power pads 73, the three low-voltage side power pads 73 are arranged at intervals in the first direction, there are three low-voltage power chips 74, the three low-voltage power chips 74 correspond to the three low-voltage side power pads 73 one by one, and the three low-voltage power chips 74 are all electrically connected to the low-voltage driver chip 1414.

[0047] Furthermore, the intelligent power module 100 is also provided with power side pins 80, which are spaced apart on the side of the power pad 70 away from the driving pad 10 in the second direction, and there are multiple power side pins 80, and the multiple power side pins 80 are spaced apart in the first direction, and the multiple power side pins 80 are electrically connected to the low voltage power chip 74 and the high voltage power chip 72 respectively.

[0048] In this way, the basic structure of the intelligent power module 100 can be formed, and the normal operation of the intelligent power module 100 can be ensured.

[0049] Furthermore, by setting the number of bootstrap pads 31 on the high-side driver chip power supply voltage pin 30 to one, and making the substrates of the three bootstrap chips 40 into an integral piece, the three adjacent bootstrap chips 40 are abutted against each other and integrated into one. In this way, on the one hand, while facilitating packaging, the total area of ​​the three bootstrap chips 40 can be reduced, and the miniaturization of the intelligent power module 100 can be facilitated. On the other hand, not only in the packaging process, the number of dicing processes can be reduced, but also in the core-on process, the number of bootstrap pads 31 can be matched with the integrated bootstrap chip 40, and the number of core-on times can be saved from three times to one, thereby improving operating efficiency and reducing costs.

[0050] Therefore, by setting a bootstrap pad 31 on the high-side driver chip power supply voltage pin 30, there are three bootstrap chips 40 and they are set in one bootstrap pad 31, and the substrates of the three bootstrap chips 40 are constructed as an integrated part, so that the three adjacent bootstrap chips 40 are close to each other and integrated into one. This can not only improve the reliability and robustness of the bootstrap chip 40, but also reduce the total area of ​​the three bootstrap chips 40, which is conducive to the miniaturization of the intelligent power module 100, and can also reduce the number of dicing processes and the number of core loading times, thereby improving operating efficiency and reducing costs.

[0051] Combination Figure 4 As shown, three adjacent bootstrap chips 40 are attached to each other and integrated into one by not cutting the substrates between them. Specifically, by not cutting the substrates between the three adjacent bootstrap chips 40, that is, the three adjacent bootstrap chips 40 are attached to each other, so that the three adjacent bootstrap chips 40 can be integrated into one, and the integration of the three adjacent bootstrap chips 40 can be made simpler and convenient for production and manufacturing, while reducing the total area of ​​the three bootstrap chips 40 and the number of dicing processes and the number of core loading.

[0052] Combination Figure 3 and Figure 4As shown, the bootstrap chip 40 may mainly include a P-type anode layer 41 and an N-type cathode layer 42, the P-type anode layer 41 is the substrate of the bootstrap chip 40, the P-type anode layers 41 of the three bootstrap chips 40 are constructed as an integral part and welded to the bootstrap pad 31, and the N-type cathode layer 42 is arranged on the side of the P-type anode layer 41 away from the bootstrap pad 31.

[0053] Specifically, the bootstrap chip 40 may mainly include a P-type anode layer 41 and an N-type cathode layer 42, the P-type anode layer 41 and the N-type cathode layer 42 are in contact to form a PN junction, and the normal operation of the bootstrap chip 40 can be ensured by electrically connecting the P-type anode layer 41 to the high-side driver chip power supply voltage pin 30 and connecting the N-type cathode layer 42 to the high-side driver suspension power supply voltage pin 20. Among them, the P-type anode layer 41 is composed of a P-type semiconductor material, and the N-type cathode layer 42 is composed of an N-type semiconductor material.

[0054] In the prior art, the boost diode uses N-type semiconductor material as the substrate and is welded at the pad position on the edge of the intelligent power module package. It is easy to delaminate when affected by stress or thermal stress. In order to ensure the structural reliability of the bootstrap chip on the intelligent power module, it is necessary to open a through hole at the end of the high-side drive floating power supply voltage pin that is away from the bootstrap chip in the first direction. In addition, a wire needs to be welded on the high-side drive floating power supply voltage pin. The wire is used to connect the high-side drive floating power supply voltage and the driver chip, but the solder overflow between the N-type substrate and the pad is likely to affect the welding effect of the wire. It is necessary to open a separation groove on the high-side drive floating power supply voltage pin to block the solder from the chip welding area from flowing to the wire connection area. The provision of through holes and separation grooves will increase the production cost of the intelligent power module.

[0055] By setting the P-type anode layer 41 as the substrate of the bootstrap chip 40, the P-type anode layers 41 of the three bootstrap chips 40 are constructed into an integral part, the bootstrap pad 31 may include a frame 311, the P-type anode layer 41 is set on the frame 311, the anode electrode on the side of the P-type anode layer 41 is welded to the frame 311 through the solder 60, and the N-type cathode layers 42 of the three bootstrap chips 40 are spaced apart and arranged on the side of the P-type anode layer 41 away from the bootstrap pad 31, so that the N-type cathode layers 42 of the three bootstrap chips 40 are respectively electrically connected to the corresponding high-side drive floating power supply voltage pins 20 In this way, three bootstrap chips 40 with P-type substrate boost diodes can be arranged in the intelligent power module 100. Under the premise of ensuring that the three bootstrap chips 40 operate normally and independently and the intelligent power module 100 operates normally, it is not necessary to open a through hole on the high-side driving floating power supply voltage pin 20 or to open a separation groove on the high-side driving floating power supply voltage pin 20 in the manufacturing process of the intelligent power module 100, thereby reducing the production cost of the intelligent power module 100 and improving the structural reliability of the intelligent power module 100.

[0056] Among them, silver paste can be applied as solder 60 between the frame 311 and the anode electrode on the side of the P-type anode layer 41, which is used to reduce the contact resistance between the anode electrode on the side of the P-type anode layer 41 and the frame 311, which is conducive to ensuring that the bootstrap chip 40 has good contact in the intelligent power module 100. It should be noted that solder 60 such as solder paste, tin sheet, tin wire, etc. can also be provided between the frame 311 and the anode electrode on the side of the P-type anode layer 41, which is not specifically limited here. And, the N-type cathode layer 42 is arranged on the side of the P-type anode layer 41 away from the bootstrap pad 31, so that the N-type cathode layer 42 can be prevented from being directly electrically connected to the bootstrap pad 31.

[0057] Combination Figure 4 As shown, a guard ring 43 is provided between the N-type cathode layers 42 of the three adjacent bootstrap chips 40. Specifically, after the N-type cathode layer 42 is provided on the side of the P-type anode layer 41 away from the bootstrap pad 31, a guard ring 43 can be provided around the N-type cathode layer 42, so that the guard ring 43 can have an isolation effect on the adjacent bootstrap chips 40, so that the three adjacent bootstrap chips 40 can operate independently. In addition, when the bootstrap chip 40 is soldered to the bootstrap pad 31, the guard ring 43 blocks the solder 60, which can prevent the solder 60 from climbing up the side wall of the bootstrap chip 40, causing the N-type cathode layer 42 and the P-type anode layer 41 to be conductive, thereby improving the structural reliability of the bootstrap chip 40, ensuring the normal operation of the three bootstrap chips 40, and improving the reliability of the intelligent power module 100.

[0058] Furthermore, considering that three adjacent bootstrap chips 40 are close to each other and integrated into one, at least part of the protection ring 43 is located between the N-type cathode layers 42 of the three adjacent bootstrap chips 40, that is, the N-type cathode layers 42 of two adjacent bootstrap chips 40 can share the protection ring 43, thereby saving the area of ​​the protection ring 43 and reducing the total area of ​​the three bootstrap chips 40, which can facilitate the miniaturization of the bootstrap chip 40 and even the intelligent power module 100.

[0059] The guard ring 43 is a P-type guard ring. Specifically, the guard ring 43 can be set as a P-type guard ring, which can separate the N-type cathode layer 42 of the adjacent bootstrap chips 40 under the premise of preventing the N-type cathode layer 42 and the P-type anode layer 41 from being connected through the solder 60, and has an isolation effect on the adjacent bootstrap chips 40, thereby ensuring the independent operation of the three bootstrap chips 40 and improving the reliability of the intelligent power module 100.

[0060] Furthermore, the ion doping concentration of the P-type guard ring is higher than the ion doping concentration of the P-type anode layer 41. Specifically, by setting the ion doping concentration of the P-type guard ring higher than the ion doping concentration of the P-type anode layer 41, the P-type guard ring with high ion doping concentration can enhance the isolation effect on the adjacent bootstrap chips 40, and the area between the adjacent chips is only doped with P-type ions, avoiding the formation of PN junctions in the area between the adjacent chips and causing the three bootstrap chips 40 to be turned on, thereby further ensuring the independent operation of the three bootstrap chips 40 and improving the reliability of the intelligent power module 100.

[0061] Combination Figure 4 As shown, the surface of the guard ring 43 facing away from the substrate is flush with the surface of the N-type cathode layer 42 facing away from the substrate. Specifically, by setting the surface of the guard ring 43 facing away from the substrate and the surface of the N-type cathode layer 42 facing away from the substrate to be flush with each other, that is, setting the size of the guard ring 43 in the direction away from the bootstrap pad 31 to be the same as the size of the N-type cathode layer 42 in the direction away from the bootstrap pad 31, it is possible to avoid the guard ring 43 being too small in the direction away from the bootstrap pad 31, resulting in the guard ring 43 being unable to completely shield the N-type cathode layer 42, and it is possible to avoid the guard ring 43 being too large in the direction away from the bootstrap pad 31, resulting in material waste and increased volume. In this way, the structural design of the bootstrap chip 40 can be optimized, and the shielding effect of the guard ring 43 on the N-type cathode layer 42 is ensured while avoiding material waste and ensuring miniaturization, and effectively and reliably preventing the solder 60 from conducting the N-type cathode layer 42 and the P-type anode layer 41, and the reliability of the bootstrap chip 40 can be further improved.

[0062] Combination Figure 3 and Figure 4 As shown, the bootstrap chip 40 may further include a resistor 44, which is disposed on a side of the N-type cathode layer 42 away from the P-type anode layer 41. Specifically, after the P-type anode layer 41 and the N-type cathode layer 42 form a PN junction, the bootstrap chip 40 may be formed in combination with the resistor 44. The resistor 44 may limit current, change working state, affect voltage characteristics, and improve stability in the bootstrap chip 40, thereby ensuring the working reliability of the bootstrap chip 40 in the intelligent power module 100.

[0063] Furthermore, combined with Figure 4As shown, three bootstrap chips 40 are arranged in the second direction, the length of the resistor 44 in the second direction is smaller than the N-type cathode layer 42, and the two ends of the resistor 44 in the second direction are spaced apart from the guard rings 43 on both sides of the second direction of the N-type cathode layer 42, wherein the second direction and the first direction are perpendicular to each other. Such a setting can effectively prevent the two ends of the resistor 44 in the second direction from contacting the guard rings 43 on both sides of the second direction of the N-type cathode layer 42, thereby affecting the normal operation of the resistor 44, thereby further improving the working reliability of the bootstrap chip 40.

[0064] The electronic device according to the present invention may mainly include: the above-mentioned intelligent power module 100. The electronic device equipped with the intelligent power module 100 of the embodiment of the present invention can not only improve reliability and robustness, but also improve the degree of miniaturization, and can also improve production and packaging efficiency, reduce costs, thereby improving the product competitiveness of the electronic device.

[0065] In the embodiment of the present invention, the intelligent power module 100 includes but is not limited to a copper frame product and a copper frame product combined with a heat sink. The copper frame includes but is not limited to a direct copper-clad ceramic substrate, and the heat sink includes but is not limited to a heat-dissipating copper sheet, which can ensure the heat dissipation performance of the high-voltage driver chip 12 in the intelligent power module 100 during operation. The frame of the intelligent power module 100 is partially silver-plated to reduce the contact resistance between the chip and the frame and ensure good contact between the chip. The intelligent power module 100 contains power chips such as insulated gate bipolar transistors, metal-oxide semiconductor field effect transistors, fast recovery diodes and boost diodes. The driver chips include but are not limited to full-bridge driver chips, half-bridge driver chips, high-voltage driver chips 12 and low-voltage driver chips 14. In the present invention, the solder used inside the intelligent power module 100 includes but is not limited to solder paste and silver paste, which is conducive to reducing the contact resistance between the internal structures of the intelligent power module 100 and improving the electrical connection reliability of the intelligent power module 100.

[0066] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0067] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0068] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. An intelligent power module, characterized in that: include: A driving pad (10), the driving pad (10) comprising a high-voltage side driving pad (11), and a high-voltage driving chip (12) is arranged on the high-voltage side driving pad (11); A high-side drive suspension power supply voltage pin (20), the high-side drive suspension power supply voltage pin (20) and the high-voltage side drive pad (11) are arranged at intervals in a first direction, and the high-side drive suspension power supply voltage pin (20) is used to connect a high-side drive suspension power supply voltage; a high-side driver chip power supply voltage pin (30), the high-side driver chip power supply voltage pin (30) being arranged between the high-side driver pad (11) and the high-side driver suspension power supply voltage pin (20) at intervals in the first direction, the high-side driver chip power supply voltage pin (30) extending along the periphery of the high-side driver pad (11) and being used to connect the high-side driver chip power supply voltage, and a bootstrap pad (31) being arranged on the high-side driver chip power supply voltage pin (30); A bootstrap chip (40), wherein the bootstrap chips (40) are three and are arranged in one bootstrap pad (31), the substrates of the three bootstrap chips (40) are constructed as an integral piece, so that the three adjacent bootstrap chips (40) are attached to each other and integrated into one, and the bootstrap chip 40 is arranged near the middle of the intelligent power module 100; The bootstrap chip (40) comprises a P-type anode layer (41) and an N-type cathode layer (42); the P-type anode layer (41) is a substrate of the bootstrap chip (40); the P-type anode layers (41) of the three bootstrap chips (40) are constructed as an integral part and welded to the bootstrap pad (31); and the N-type cathode layer (42) is arranged on a side of the P-type anode layer (41) away from the bootstrap pad (31); A guard ring (43) is provided between the N-type cathode layers (42) of the three adjacent bootstrap chips (40), the guard ring (43) being a P-type guard ring, the ion doping concentration of the P-type guard ring being higher than the ion doping concentration of the P-type anode layer (41); The bootstrap chip (40) further comprises a resistor (44), wherein the resistor (44) is arranged on a side of the N-type cathode layer (42) away from the P-type anode layer (41), and the three bootstrap chips (40) are arranged in a second direction, and the length of the resistor (44) in the second direction is smaller than that of the N-type cathode layer (42), and both ends of the resistor (44) in the second direction are respectively spaced from the guard rings (43) on both sides of the N-type cathode layer (42) in the second direction, wherein the second direction and the first direction are perpendicular to each other.

2. The intelligent power module according to claim 1, characterized in that: The three adjacent bootstrap chips (40) are not cut through the substrates between them, but are abutted against each other and integrated into one.

3. The intelligent power module according to claim 1, characterized in that: The surface of the protection ring (43) facing away from the substrate is flush with the surface of the N-type cathode layer (42) facing away from the substrate.

4. An electronic device, characterized in that: include: The intelligent power module (100) according to any one of claims 1 to 3.

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