A deposition apparatus and a deposition method

Abstract

The application discloses a deposition device and a deposition method. The deposition device comprises a reaction cavity in which a wafer is placed; a shower plate arranged on the top of the reaction cavity to input process gas into the reaction cavity; and a gas extraction assembly comprising at least one pair of gas extraction ports and a gas extraction ring connected to the shower plate. The gas extraction ring covers the upper surface of the wafer in the form of a cover in combination with the shower plate. The gas extraction ring comprises a plurality of gas extraction holes with internal threads to adjust the aperture size of the gas extraction holes by cooperating with screws. The at least one pair of gas extraction ports are symmetrically arranged in the interior of the reaction cavity to symmetrically extract the process gas in the gas extraction ring after the deposition process is completed. Through the deposition device, the flow field distribution in the reaction cavity can be adjusted to improve the gas extraction efficiency and optimize the uniformity of the deposited film, and the process adjustment window can be increased to save the cost of hardware modification.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a deposition process, a deposition method, and a computer-readable storage medium. Background Art

[0002] At present, in the semiconductor processing process, the atomic layer deposition (ALD) reaction is difficult to control as a whole. The ideal ALD reaction is that the precursor reacts on the surface of the base, rather than in the space above the base. Therefore, in the ALD reaction, the first precursor must be completely removed from the chamber before the second precursor pulse is injected into the reaction chamber. If the first precursor is not completely removed, the first precursor that is partially retained in the transmission pipeline and the upper space of the chamber will react with the second precursor that is subsequently introduced, forming compounds on the chamber and pipeline walls, thereby contaminating the substrate surface, introducing impurities, and forming impurity particles. At the same time, it is also easy for unnecessary chemical vapor deposition (CVD) reactions to occur, affecting the quality of the ALD film.

[0003] A large flow of purge gas and an efficient pumping rate are important methods for completely removing the precursors trapped in the transmission pipeline and the upper space of the chamber. However, the current problems are that, first, the hardware of the deposition device itself may be difficult to achieve, and second, it needs to be solved in combination with the deposition process. In the prior art, there are only exhaust holes on one side of the reaction chamber, which can easily lead to excessive airflow velocity at the exhaust port and uneven airflow distribution in the reaction chamber. In addition, the ALD process window in the reaction chamber is small, which is prone to problems such as process instability, poor repeatability, poor film quality, and poor film uniformity. It is usually necessary to solve this problem through a lot of hardware design modifications.

[0004] In order to solve the above-mentioned problems existing in the prior art, this field urgently needs an improved deposition technology that can not only cooperate with the deposition process, adjust the flow field distribution in the reaction chamber, and improve the pumping efficiency, thereby optimizing the uniformity of the deposited film, but also increase the process adjustment window and save the cost of hardware modification. Summary of the Invention

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a deposition device, a deposition method, and a computer-readable storage medium, which can not only cooperate with the deposition process, adjust the flow field distribution in the reaction chamber, improve the pumping efficiency, and thus optimize the uniformity of the deposited film, but also increase the process adjustment window, saving the cost of hardware modification.

[0007] Specifically, the above-mentioned deposition device provided according to the first aspect of the present invention includes: a reaction chamber, in which a wafer is placed; a spray plate, arranged at the top of the reaction chamber to input process gas into the reaction chamber; and a vacuum assembly, including at least one pair of vacuum ports and a vacuum ring, the vacuum ring being connected to the spray plate, the vacuum ring being combined with the spray plate to cover the upper surface of the wafer in the form of a buckle cover, and the vacuum ring including a plurality of vacuum holes with internal threads for cooperating with screws to adjust the aperture size of the vacuum holes, the at least one pair of vacuum ports being symmetrically arranged inside the reaction chamber for symmetrically extracting the process gas in the vacuum ring after the deposition process is completed.

[0008] Furthermore, in some embodiments of the present invention, the external thread of the screw cooperates with the internal thread of the air extraction hole, so that the screw can be completely screwed into the air extraction hole to block the air extraction hole.

[0009] Furthermore, in some embodiments of the present invention, the screw is a hole screw, and its head includes a hand grip portion.

[0010] Furthermore, in some embodiments of the present invention, the process gas includes a first precursor gas and a second precursor gas, which are uniformly input into the reaction chamber through the shower plate to perform an atomic layer deposition process.

[0011] Furthermore, in some embodiments of the present invention, the reaction chamber is connected to a first carrier gas source, a first purge gas source, and a first precursor source, so as to provide a first carrier gas through the first carrier gas source to carry the first precursor gas into the reaction chamber, and after completing the first deposition process of the first precursor gas, introduce the first purge gas to purge the reaction chamber, and the reaction chamber is connected to a second carrier gas source, a second purge gas source, and a second precursor source, so as to provide a second carrier gas through the second carrier gas source to carry the second precursor gas into the reaction chamber after the first purge gas has purged the reaction chamber, and after completing the second deposition process of the second precursor gas, introduce the second purge gas to purge the reaction chamber.

[0012] Furthermore, in some embodiments of the present invention, the first precursor gas includes nitrogen chloride gas, and the second precursor gas includes ammonia gas.

[0013] Furthermore, in some embodiments of the present invention, the external connection of the at least one pair of air extraction ports includes an air extraction system of an air extraction pump.

[0014] In addition, according to the above-mentioned deposition method provided by the second aspect of the present invention, the above-mentioned deposition device provided by the first aspect of the present invention is used to perform a thin film deposition process, and the deposition process includes the following steps: in response to the completion of the first deposition process performed according to the first precursor gas, the reaction chamber is evacuated for the first time to remove the residual first precursor gas; in response to the completion of purging the deposition device by the first purge gas, the reaction chamber is evacuated for the second time to remove the gas in the reaction chamber; in response to the completion of the second deposition process performed according to the second precursor gas, the reaction chamber is evacuated for the third time to remove the residual second precursor gas; and in response to the completion of purging the deposition device by the second purge gas, the reaction chamber is evacuated for the fourth time to remove the gas in the reaction chamber.

[0015] Furthermore, in some embodiments of the present invention, before the step of evacuating the reaction chamber for the first time to remove residual first precursor gas in response to completion of the first deposition process performed according to the first precursor gas, the step also includes: introducing a first carrier gas for a first time length into the reaction chamber; carrying the first precursor gas into the reaction chamber via the first carrier gas to perform a first deposition process; and in response to completion of the first deposition process, stopping the introduction of the first precursor gas and continuing to introduce the first carrier gas.

[0016] Furthermore, in some embodiments of the present invention, before the step of evacuating the reaction chamber for a third time to remove residual second precursor gas in response to completion of the second deposition process performed according to the second precursor gas, the step also includes: introducing a second carrier gas for a second duration into the reaction chamber; carrying the second precursor gas into the reaction chamber via the second carrier gas to perform a second deposition process; and in response to completion of the second deposition process, stopping the introduction of the second precursor gas and continuing to introduce the second carrier gas.

[0017] Furthermore, in some embodiments of the present invention, after the step of evacuating the reaction chamber for the fourth time to remove the gas in the reaction chamber in response to completing the purging of the deposition device with the second purge gas, the method further includes: detecting the thickness of the deposited film; terminating the deposition process in response to the thickness of the deposited film reaching the target thickness; and continuing to introduce the first carrier gas for a first time length into the reaction chamber in response to the thickness of the deposited film not reaching the target thickness, so as to circulate the deposition method.

[0018] In addition, according to the third aspect of the present invention, there is also provided a computer-readable storage medium having computer instructions stored thereon, wherein when the computer instructions are executed by a processor, the above-mentioned deposition method provided by the second aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0020] Figure 1 A schematic structural diagram of a deposition device provided according to some embodiments of the present invention is shown;

[0021] Figure 2 A schematic structural diagram of a deposition device provided according to some other embodiments of the present invention is shown;

[0022] Figure 3 A flow chart of a deposition method provided according to some embodiments of the present invention is shown;

[0023] Figure 4 A flow chart of performing a first deposition process according to some embodiments of the present invention is shown; and

[0024] Figure 5 A flow chart of performing a second deposition process according to some embodiments of the present invention is shown.

[0025] Reference numerals:

[0026] 100 deposition device;

[0027] 110 reaction chamber;

[0028] 111 wafer tray;

[0029] 120 spray plate;

[0030] 130 exhaust assembly;

[0031] 131 air extraction port;

[0032] 132 pumping ring;

[0033] 1320 exhaust hole;

[0034] 140 vacuum pump;

[0035] 211 first carrier gas source;

[0036] 212 second carrier gas source;

[0037] 221 first purge gas source;

[0038] 222 second purge gas source;

[0039] 231 first precursor source;

[0040] 232 Second precursor source;

[0041] 240 mass flow controller;

[0042] 250 filled tanks;

[0043] Steps S310 to S340;

[0044] Steps S311 to S313; and

[0045] Steps S331~S333. DETAILED DESCRIPTION

[0046] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0047] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0048] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0049] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0050] As mentioned above, in an ALD reaction, the first precursor must be completely removed from the chamber before the second precursor is pulsed into the reaction chamber. If this is not done, any remaining precursor in the transfer lines and upper chamber volume will react with the second precursor introduced later, forming compounds in the chamber and on the piping walls. This can contaminate the substrate surface, introduce impurities, and form foreign particles. This can also easily lead to unwanted chemical vapor deposition (CVD) reactions, compromising ALD film quality.

[0051] A large flow of purge gas and an efficient pumping rate are important methods for completely removing the precursors trapped in the transmission pipeline and the upper space of the chamber. However, the current problems are that, first, the hardware of the deposition device itself may be difficult to achieve, and second, it needs to be solved in combination with the deposition process. In the prior art, there are only exhaust holes on one side of the reaction chamber, which can easily lead to excessive airflow velocity at the exhaust port and uneven airflow distribution in the reaction chamber. In addition, the ALD process window in the reaction chamber is small, which is prone to problems such as process instability, poor repeatability, poor film quality, and poor film uniformity. It is usually necessary to solve this problem through a lot of hardware design modifications.

[0052] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a deposition device, a deposition method, and a computer-readable storage medium, which can not only cooperate with the deposition process, adjust the flow field distribution in the reaction chamber, improve the exhaust efficiency, and thus optimize the uniformity of the deposited film, but also increase the process adjustment window, saving the cost of hardware modification.

[0053] In some non-limiting embodiments, the deposition apparatus provided in the first aspect of the present invention can be used to implement the deposition method provided in the second aspect of the present invention. Specifically, in some non-limiting embodiments, the third aspect of the present invention provides a computer-readable storage medium on which computer instructions can be stored. When the computer instructions are executed by a processor, the deposition method provided in the second aspect of the present invention can be implemented.

[0054] The following describes the operating principles of the above-mentioned deposition apparatus in conjunction with several examples of deposition methods. Those skilled in the art will appreciate that these examples of deposition methods are merely non-limiting embodiments of the present invention, intended to clearly illustrate the main concepts of the present invention and provide specific solutions that facilitate implementation by the public, and are not intended to limit the full operating methods or functions of the deposition apparatus. Similarly, the deposition apparatus is merely a non-limiting embodiment of the present invention and does not constitute a limitation on the implementation of the various steps in these deposition methods.

[0055] First, see Figure 1 , Figure 1 A schematic structural diagram of a deposition device provided according to some embodiments of the present invention is shown.

[0056] like Figure 1 As shown, in some embodiments of the present invention, the deposition apparatus 100 may include a reaction chamber 110, which may be provided with a wafer tray 111 for placing wafers. Optionally, the wafer tray 111 may include an adsorption device for adsorbing and fixing the wafers. The wafer tray 111 may also include a heating device for heating the wafers supported thereon. The ceiling of the reaction chamber 110 may be provided with a shower plate 120, which includes a plurality of shower holes for inputting process gases into the reaction chamber 110.

[0057] like Figure 1 As shown, the reaction chamber 110 of the deposition apparatus 100 may further include a gas extraction assembly 130. The gas extraction assembly 130 may include at least one pair of gas extraction ports 131 and a gas extraction ring 132. The at least one pair of gas extraction ports 131 may be symmetrically arranged inside the reaction chamber 110, for example, on the left and right sides, and the outsides of the at least one pair of gas extraction ports 131 may be connected to a gas extraction system including a gas extraction pump 140, so as to symmetrically extract process gases from the reaction chamber 110 after the deposition process is completed.

[0058] Compared with the prior art in which only one exhaust port is provided in the reaction chamber, it is easy to cause the air flow velocity near the exhaust port to be too fast, and the gas flow velocity in other areas far away from the exhaust port is not only slower than the flow velocity at the exhaust port, but also the gas in other areas has obvious uneven distribution problems. In the present invention, at least one pair of exhaust ports 131 are symmetrically provided inside the reaction chamber 110. For example, two pairs of exhaust ports 131 (i.e., 4 exhaust ports 131) can be symmetrically provided, which can effectively prevent the air flow from gathering at a single exhaust port and causing the problem of biased air flow distribution, thereby achieving uniform air flow distribution in the reaction chamber 110, which is beneficial to optimizing the uniformity of the deposited film.

[0059] Optionally, the at least one pair of gas extraction ports 131 may be directly disposed in the reaction chamber 110 in the form of gas extraction ports, or may be disposed in the reaction chamber 110 in combination with a gas extraction pipeline. Those skilled in the art will appreciate that the configuration of the at least one pair of gas extraction ports 131 is merely a non-limiting embodiment of the present invention, intended to clearly illustrate the main concept of the present invention and to provide a specific solution that is convenient for the public to implement, and is not intended to limit the scope of protection of the present invention.

[0060] Please continue to see Figure 1 The vacuum ring 132 in the deposition apparatus 100 can be connected to the shower plate 120. Optionally, the vacuum ring 132 and the shower plate 120 can be integrated. The vacuum ring 132 can be combined with the shower plate 120 to form a snap-on cover covering the upper surface of the wafer on the wafer tray 111, thereby reducing the reaction space within the reaction chamber 110 and reducing the impact of the flow field on the reaction film formation.

[0061] Specifically, it can be understood that the air pumping ring 132 and the spray plate 120 can form an inverted cup structure, and the spray plate 120 is equivalent to the bottom of the cup structure, which includes a plurality of spray holes ( Figure 1 The exhaust ring 132 is equivalent to the side wall of the cup structure and includes a plurality of exhaust holes 1320. At least one pair of exhaust ports 131 is symmetrically arranged on the side of the cup structure.

[0062] Continue as Figure 1 As shown, in some embodiments of the present invention, the pumping ring 132 may include a plurality of pumping holes 1320 with internal threads. The pumping holes 1320 may be distributed around the pumping ring 132 and may be used to fit screws with external threads ( Figure 1 The diameter of the pumping holes 1320 can be adjusted by using a screw thread (not shown). Furthermore, on the pumping ring 132, the external thread of the screw can also mate with the internal thread of the pumping hole 1320 to completely screw the screw into the pumping hole 1320, that is, to adjust the pumping hole 1320 to a diameter of 0. This can block multiple pumping holes 1320 on the pumping ring 132 according to the current gas flow distribution and gas flow rate within the reaction chamber 110 to achieve a uniform gas flow rate and distribution.

[0063] In an embodiment of the present invention, the presence and diameter of the pumping holes 1320 in the pumping ring 132 are adjustable. This allows the gas field distribution within the reaction chamber 110 to be adjusted, thereby aligning the flow field distribution with the deposition process and optimizing film uniformity. For example, if the deposited film at the 12 o'clock position within the pumping ring 132 is relatively thick, the diameter of the pumping holes 1320 at the 12 o'clock position within the pumping ring 132, as well as the sparseness of the pumping holes 1320 in this area, can be adjusted with a screw to optimize film uniformity.

[0064] Furthermore, the adjustable apertures 1320 in the pumping ring 132 can also increase the process window of the deposition process. Increasing the process window can be understood as increasing the adjustable range of process parameters. For example, with conventional deposition apparatuses, the adjustable airflow is limited to a range of 1000 sccm to 1500 sccm. If the adjustable airflow rate is continuously increased in conventional deposition apparatuses, the increased airflow rate will affect the uniformity of the resulting film. In the embodiments of the present invention, however, since the pumping holes 1320 in the pumping ring 132 of the deposition apparatus 100 can be plugged or resized with screws, the adjustable airflow range can be increased without relying heavily on hardware improvements. For example, the adjustable airflow range can reach 500 sccm to 2000 sccm, thereby expanding the adjustable process window. This also avoids the need for significant structural modifications and costly recasting of the pumping ring 132 during the initial development of the tool.

[0065] In the present invention, the exhaust assembly 130 including at least a pair of exhaust ports 131 and the above-mentioned exhaust ring 132 can make the optimized airflow field distribution symmetrical around the center of the wafer, so that the formed film will not be eccentric, and the uniformity of the film formation can be significantly improved.

[0066] In some optional embodiments, the screw that cooperates with the exhaust hole 1320 can be a hole-shaped screw, the head of which includes a hand-grip portion for easy installation and use by hand without using tools.

[0067] For further information, please see Figure 1The process gas introduced into the deposition apparatus 100 may include a first precursor gas and a second precursor gas. The first precursor gas and the second precursor gas may be uniformly introduced into the reaction chamber 110 via the shower plate 120 for performing an atomic layer deposition process. Alternatively, in some embodiments, the first precursor gas may be titanium chloride (TiCl4) gas, and the second precursor gas may be ammonia (NH3) gas, for performing an atomic layer deposition reaction in the reaction chamber 110 to form a titanium nitride (TiN) thin film.

[0068] Specifically, see Figure 2 , Figure 2 A schematic structural diagram of a deposition device provided according to some other embodiments of the present invention is shown.

[0069] like Figure 2 As shown, in some embodiments, the reaction chamber 110 of the deposition apparatus 100 can be connected to a first carrier gas source 211, a first purge gas source 221, and a first precursor source 231, so that the first carrier gas is provided through the first carrier gas source 211 to carry the first precursor gas into the reaction chamber 110, and after completing a first deposition process using the first precursor gas, the first purge gas is introduced to purge the reaction chamber. The reaction chamber 110 can also be connected to a second carrier gas source 212, a second purge gas source 222, and a second precursor source 232, so that after purging the reaction chamber 110 with the first purge gas, the second carrier gas source 212 is provided to carry the second precursor gas into the reaction chamber 110, and after completing a second deposition process using the second precursor gas, the second purge gas is introduced to purge the reaction chamber 110.

[0070] Alternatively, in some embodiments, the first carrier gas, the second carrier gas, the first purge gas, and the second purge gas may be inert gases, such as nitrogen. The first precursor gas may be titanium chloride, and the second precursor gas may be ammonia.

[0071] Continue as Figure 2 As shown, in some optional embodiments, the output end of each chemical source (including the first carrier gas source 211, the first purge gas source 221, the first precursor source 231, and the second carrier gas source 212, the second purge gas source 222, and the second precursor source 232) can be provided with a mass flow controller (MFC) to adjust the output flow rate of each chemical source gas.

[0072] Furthermore, in some preferred embodiments, a filling tank 250 for pressurization may be provided at the output ends of the first purge gas source 221, the first precursor source 231, and the second precursor source 223 of the second purge gas source 222, so as to provide a large flow of purge gas in a short time and provide a large amount of pulsed precursor gas for the deposition process.

[0073] Since the above-mentioned deposition device 100 provided in the first aspect of the present invention has an additional exhaust assembly 130 (exhaust ring 132 and at least one pair of exhaust ports 131), it is possible that the purge airflow during the process will be slowed down, thereby reducing the exhaust efficiency. Therefore, the deposition process performed by the deposition device 100 also needs to be improved to a certain extent.

[0074] Specifically, see Figure 3 , Figure 3 A flow chart of a deposition method according to some embodiments of the present invention is shown.

[0075] like Figure 3 As shown, in some embodiments of the present invention, the deposition method may include step S310: in response to completing the first deposition process performed according to the first precursor gas, performing a first evacuation on the reaction chamber to remove residual first precursor gas.

[0076] Furthermore, if Figure 4 As shown, before executing step S310 , the step of performing the first deposition process may further include steps S311 to S313 .

[0077] First, optionally, the reaction chamber 110 and the wafer to be processed may be pre-treated, for example, by heating the wafer to a temperature of 400-600° C. and maintaining the chamber pressure in the reaction chamber 110 within a range of 1-20 Torr.

[0078] Then, step S311 can be performed: the first carrier gas for a first time length is introduced into the reaction chamber 110. By introducing the first carrier gas into the reaction chamber 110 in advance, the various pipelines in the deposition device 100 are pretreated, purged, and the gas flow is adjusted by the first carrier gas. Afterwards, step S312 can be performed: the first precursor gas (TiCl4) is carried into the reaction chamber 110 via the first carrier gas to perform the first deposition process. Specifically, the first precursor gas (TiCl4) can be mixed with the first carrier gas that has been stabilized in the above step S311 in a pulsed manner and introduced into the reaction chamber 110, and the first deposition process is performed on the wafer surface. Afterwards, step S313 can be performed: in response to the completion of the first deposition process, the first precursor gas (TiCl4) can be stopped from being introduced, and the first carrier gas can be continuously introduced to continue purging the pipelines in the deposition device 100 to reduce the residue of the first precursor gas (TiCl4) in the pipelines.

[0079] After completing step S313 , step S310 may be formally executed to perform a first evacuation of the reaction chamber 110 to remove residual first precursor gas (TiCl 4 ).

[0080] Please continue to return Figure 3 The deposition method provided by the present invention may further include step S320: in response to completing the purge of the deposition apparatus with the first purge gas, performing a second evacuation of the reaction chamber to remove gas from the reaction chamber. Specifically, a large amount of the first purge gas (N2) may be introduced into the reaction chamber 110 to purge the pipelines in the deposition apparatus 100 and the reaction chamber 110.

[0081] Those skilled in the art will appreciate that the order and / or frequency of the first gas extraction action in step S310 and the purging action using the first purge gas in step S320 may vary depending on the circumstances. Those skilled in the art may also adopt other orders and / or frequencies to remove the residual first precursor gas (TiCl4) based on the concept of the present invention.

[0082] Continue as Figure 3 As shown, the deposition method provided by the present invention may further include step S330: in response to the completion of the second deposition process performed according to the second precursor gas (NH3), the reaction chamber is evacuated for a third time to remove residual second precursor gas.

[0083] Furthermore, if Figure 5 As shown, before executing step S310 , the step of performing the second deposition process may further include steps S331 to S333 .

[0084] First, step S331 can be performed: a second carrier gas of a second length of time is introduced into the reaction chamber 110. By introducing the second carrier gas into the reaction chamber 110 in advance, the various pipelines in the deposition device 100 are pre-treated, purged, and the gas flow is adjusted to a steady state by the second carrier gas. Thereafter, step S332 can be performed: a second precursor gas (NH3) is carried into the reaction chamber 110 via the second carrier gas to perform a second deposition process. Specifically, the second precursor gas (NH3) can be mixed with the second carrier gas that has been stabilized in the above step S331 in a pulsed manner and introduced into the reaction chamber 110, and a second deposition process is performed on the wafer surface. Thereafter, step S333 can be performed: in response to the completion of the second deposition process, the introduction of the second precursor gas (NH3) can be stopped, and the second carrier gas can be continuously introduced to continue purging the pipelines in the deposition device 100 to reduce the residue of the second precursor gas (NH3) in the pipelines.

[0085] After step S313 is completed, step S330 may be formally executed to pump down the reaction chamber 110 for the third time to remove the residual second precursor gas (NH 3 ).

[0086] Please continue to return Figure 3 The deposition method provided by the present invention may further include step S340: in response to completing the purge of the deposition apparatus with the second purge gas, performing a fourth evacuation of the reaction chamber to remove gas from the reaction chamber. Specifically, a large amount of the second purge gas (N2) may be introduced into the reaction chamber 110 to purge the pipelines in the deposition apparatus 100 and the reaction chamber 110.

[0087] Similarly, those skilled in the art will understand that the order and / or number of the third pumping action in the above-mentioned step S330 and the purging action through the second purge gas in S340 may depend on the circumstances. Those skilled in the art may also adopt other orders and / or times to remove the residual second precursor gas (NH3) based on the concept of the present invention.

[0088] Furthermore, in some preferred embodiments, after executing step S340, the thickness of the deposited film may be detected. When it is detected that the thickness of the deposited film has reached the target thickness, the deposition process may be terminated. However, if it is detected that the thickness of the deposited film has not reached the target thickness, the first carrier gas may continue to be introduced into the reaction chamber 110 for the first duration, thereby cyclically repeating steps S310 to S340 of the above-described deposition method.

[0089] In the above-mentioned embodiment of the deposition process of the present invention, by inserting the step of vacuum pumping by the exhaust component 130 between the various process steps including the step of pulse-feeding the first precursor gas (TiCl4) and the second precursor gas (NH3) into the reaction chamber 110 and the step of purging with the first purge gas (N2) and the second purge gas (N2), the retention amount of the first precursor gas and the second precursor gas in the chamber of the reaction chamber 110 and in the pipeline of the deposition device 100 can be reduced, thereby reducing or avoiding the compounds formed by unnecessary CVD reactions, which is beneficial to reducing the maintenance cycle of the machine and improving the quality of the deposited film.

[0090] In addition, in the embodiment of the above-mentioned deposition process of the present invention, by simultaneously pulse-inputting the first precursor gas (TiCl4) and the second precursor gas (NH3) and the corresponding carrier gas commonly used in the existing deposition process into the chamber, and simultaneously stopping entering the chamber, it is improved to the carrier gas (first carrier gas and second carrier gas) entering the chamber first, and the precursor (first precursor gas and second precursor gas) entering the chamber later, and the precursor stopping entering the chamber first, and the carrier gas (first carrier gas and second carrier gas) stopping entering the chamber later, thereby not only reducing the residual precursor in the pipeline, but also making the precursor more stable each time it pulses into the chamber.

[0091] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0092] In summary, the present invention provides a deposition device, a deposition method, and a computer-readable storage medium, which can not only cooperate with the deposition process, adjust the flow field distribution in the reaction chamber, improve the pumping efficiency, and thus optimize the uniformity of the deposited film, but also increase the process adjustment window and save the cost of hardware modification.

[0093] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A deposition device, characterized in that: include: A reaction chamber, in which a wafer is placed, wherein the output ends of the first purge gas source, the first precursor source, the second purge gas source and the second precursor source connected to the reaction chamber are respectively provided with filling tanks for pressurization; a shower plate, disposed on the top of the reaction chamber to input process gas into the reaction chamber; as well as The exhaust assembly includes at least one pair of exhaust ports and an exhaust ring, wherein the exhaust ring is connected to the spray plate, and the exhaust ring is combined with the spray plate to cover the upper surface of the wafer in the form of a buckle cover, and the exhaust ring includes a plurality of exhaust holes with internal threads for cooperating with screws to adjust the aperture size of the exhaust holes. The at least one pair of exhaust ports is symmetrically arranged inside the reaction chamber to symmetrically extract the process gas in the exhaust ring after the deposition process is completed.

2. The deposition device according to claim 1, wherein: The external thread of the screw matches the internal thread of the air extraction hole so that the screw can be completely screwed into the air extraction hole to block the air extraction hole.

3. The deposition device according to claim 1, wherein: The screw is a screw with a hole, and the head thereof includes a hand grip portion.

4. The deposition device according to claim 1, wherein: The process gas includes a first precursor gas and a second precursor gas, which are uniformly input into the reaction chamber through the shower plate to perform an atomic layer deposition process.

5. The deposition device according to claim 4, wherein: The reaction chamber is connected to a first carrier gas source, a first purge gas source, and a first precursor source, and is configured to provide a first carrier gas through the first carrier gas source to carry the first precursor gas into the reaction chamber, and after completing a first deposition process of the first precursor gas, introduce the first purge gas to purge the reaction chamber. The reaction chamber is connected to a second carrier gas source, a second purge gas source, and a second precursor source, so that after the first purge gas has purged the reaction chamber, the second carrier gas is provided through the second carrier gas source to carry the second precursor gas into the reaction chamber, and after the second deposition process of the second precursor gas is completed, the second purge gas is introduced to purge the reaction chamber.

6. The deposition device according to claim 5, wherein: The first precursor gas includes titanium chloride gas, and the second precursor gas includes ammonia gas.

7. The deposition apparatus according to claim 1, wherein: The external connection of the at least one pair of air extraction ports includes an air extraction system of an air extraction pump.

8. A deposition method, characterized in that: A thin film deposition process is performed using the deposition apparatus according to any one of claims 1 to 7, wherein the deposition process comprises the following steps: In response to completion of the first deposition process performed according to the first precursor gas, performing a first evacuation of the reaction chamber to remove residual first precursor gas; In response to completion of purging the deposition device with the first purge gas, pumping the reaction chamber for a second time to remove gas from the reaction chamber; In response to completion of the second deposition process performed according to the second precursor gas, pumping the reaction chamber for a third time to remove residual second precursor gas; and In response to the completion of purging the deposition device with the second purge gas, the reaction chamber is evacuated for the fourth time to remove gas in the reaction chamber.

9. The deposition method according to claim 8, wherein: Before the step of pumping the reaction chamber for the first time to remove residual first precursor gas in response to the completion of the first deposition process performed according to the first precursor gas, the method further includes: introducing a first carrier gas for a first time period into the reaction chamber; carrying a first precursor gas into the reaction chamber via the first carrier gas to perform a first deposition process; and In response to the completion of the first deposition process, the introduction of the first precursor gas is stopped, and the introduction of the first carrier gas is continued.

10. The deposition method according to claim 8, wherein: Before the step of pumping the reaction chamber for a third time to remove residual second precursor gas in response to the completion of the second deposition process performed according to the second precursor gas, the method further includes: introducing a second carrier gas for a second time period into the reaction chamber; carrying a second precursor gas into the reaction chamber via the second carrier gas to perform a second deposition process; and In response to the completion of the second deposition process, the introduction of the second precursor gas is stopped, and the introduction of the second carrier gas is continued.

11. The deposition method according to claim 8, wherein: After the step of pumping the reaction chamber for the fourth time to remove the gas in the reaction chamber in response to the completion of purging the deposition device with the second purge gas, the method further includes: Detect the thickness of the deposited film; In response to the thickness of the deposited thin film reaching a target thickness, ending the deposition process; and In response to the thickness of the deposited thin film not reaching the target thickness, the first carrier gas is continuously introduced into the reaction chamber for a first time period to cycle the deposition method.

12. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the deposition method according to any one of claims 8 to 11 is implemented.

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