Electron beam splitting module and method for manufacturing an electron beam splitting module

Abstract

The application discloses an electron beam splitting module and a preparation method thereof. The electron beam splitting module comprises a splitting module body, a reflective layer is arranged on one side surface of the splitting module body, a fluorescent powder layer is arranged on the reflective layer, and the fluorescent powder layer is formed by depositing cathode ray fluorescent powder. When the electron beam emitted by an electron gun hits the surface of the electron beam splitting module, the energy of the high-speed moving electron can be converted into light energy by using the characteristic that the cathode ray fluorescent powder emits light under electron bombardment, and the light emitted by the cathode ray fluorescent powder is reflected to the wall surface around the vacuum cavity by using the reflective layer, so that the heat of the partial electron beam splitting module is transmitted to the wall surface around the vacuum cavity, the energy absorbed by the electron beam splitting module is reduced, the thermal effect generated by the electron beam splitting module is reduced, and the problem that the thermal deformation of the electron beam splitting module affects the pattern precision of the whole electron beam column body can be solved.

Description

Technical Field

[0001] This invention relates to the field of electron beam technology, and in particular to an electron beam splitting module and a method for preparing the electron beam splitting module. Background Technology

[0002] Electron beam lithography machines use high-energy electron beams to bombard photoresist and etch data patterns, playing an irreplaceable role in the fabrication of high-resolution, high-precision masks. However, with the continuous reduction in chip feature sizes, the low yield of single-electron-beam lithography machines limits their industrial application. Multi-electron-beam lithography machines, developed in recent years, use a large array of electron beams for exposure, significantly improving mask fabrication efficiency. However, the electron beam splitter module, a key component for generating the array electron beam, relies on an array of apertures to generate the beam. The electron beam from the electron gun passes through the aperture array to form the desired array, but most electrons from the electron gun are trapped in areas of the splitter module without apertures. Therefore, during operation, the electron beam splitter module intercepts most of the electrons from the electron gun. These high-energy electrons impact the splitter module, generating a severe thermal effect. This causes distortion of the apertures under thermal stress, affecting the beam spot shape formed by the electron beam passing through the apertures on the photomask, leading to decreased pattern accuracy and severely impacting the performance of multi-electron beam lithography machines. Due to the special structure of the beam splitter module (multi-aperture structure) and the vacuum-sealed environment it operates in, it is difficult to dissipate heat through external cooling structures (such as air cooling or liquid cooling). This severely restricts the choice of heat dissipation methods for the beam splitter module, limiting existing methods to surface radiation and heat conduction through surrounding components. This heat dissipation effect is not ideal. Therefore, finding a new and effective heat dissipation technology to reduce the thermal effect of the beam splitter module during operation, thereby improving its stability, accuracy, and consistency, is of paramount importance. Summary of the Invention

[0003] This invention provides an electron beam splitter module and a method for preparing the electron beam splitter module, in order to alleviate the problem that electron beam splitter modules in the prior art are prone to thermal effects during operation, which can lead to distortion.

[0004] According to a first aspect of the present invention, an electron beam splitter module is provided, comprising a beam splitter module body, a reflective layer disposed on one side surface of the beam splitter module body, and a phosphor layer disposed on the reflective layer, the phosphor layer being formed by cathode ray phosphor deposition.

[0005] The electron beam splitter module of this invention has a phosphor layer and a reflective layer on one side. When the electron beam emitted from the electron gun strikes the phosphor surface of the electron beam splitter module, the phosphor emits light when bombarded by electrons, converting the energy of the high-speed electrons into light energy. The reflective layer then reflects the light emitted by the phosphor onto the walls of the vacuum cavity. This transfers a portion of the electron beam energy irradiating the splitter module to the walls of the vacuum cavity. Thus, this embodiment of the invention achieves heat dissipation of the electron beam splitter module in a vacuum environment without relying on conventional external heat dissipation structures. This effectively reduces the energy of the electron beam absorbed by the splitter module, significantly reduces the thermal effect generated by the module, and effectively alleviates the problem of thermal deformation affecting the overall pattern accuracy of the electron beam beam.

[0006] In some embodiments, the beam splitter module body includes a first substrate and a second substrate, the first substrate and the second substrate being combined to form the beam splitter module body, and the reflective layer being disposed on the side of the first substrate away from the second substrate.

[0007] Therefore, this configuration allows for the combination of the structures of the first and second substrates, fully leveraging their respective functions. The first substrate is used to coat the phosphor layer and reflective layer. Due to limitations in the manufacturing process, the first substrate is relatively thin, resulting in low mechanical strength and susceptibility to breakage. In contrast, the second substrate is thicker than the first substrate, has higher mechanical strength, and can provide support and fixation. The combination of the two can prevent the first substrate from breaking and effectively utilize the phosphor layer and reflective layer on the first substrate to disperse heat from the beam splitter module, reducing the thermal effect and ensuring the image accuracy of the electron beam column.

[0008] In some embodiments, the phosphor layer has a thickness of 9 μm.

[0009] Therefore, this design ensures that the phosphor layer is not too thin, thus guaranteeing that the phosphor layer has a high light conversion efficiency for the electron beam and effectively reducing the thermal effect of the electron beam; it also ensures that the phosphor layer is not too thick, thereby reducing the fabrication difficulty and reducing the weight of the phosphor layer, ensuring that it does not affect the structural strength of the overall beam splitting module and guaranteeing the service life of the beam splitting module.

[0010] In some embodiments, the reflective layer has a thickness of 1 μm.

[0011] The reflective layer's function is to reflect light emitted from the phosphor layer towards the substrate, thereby improving the phosphor layer's energy conversion efficiency and effectively reducing the thermal effect of electron beam bombardment of the substrate. This design ensures the reflective layer isn't too thin, guaranteeing its reflective effect on the phosphor layer and preventing the emitted light from being converted back into heat on the substrate. It also prevents the reflective layer from being too thick, reducing fabrication difficulty and weight, ensuring the overall structural strength of the beam splitter module is not compromised, and guaranteeing the module's lifespan.

[0012] In some embodiments, the thickness of the first substrate is 20 μm and the thickness of the second substrate is 500 μm.

[0013] Therefore, this configuration ensures the structural strength of the resulting beam-splitting module body. Simultaneously, setting the first substrate thickness to 20 μm reduces the fabrication difficulty of the phosphor and reflective layers using a mold, ensuring the mold's structural strength and the structural quality of the first substrate and the phosphor and reflective layers on it. It also prevents bridging of the phosphor layer above the aperture during phosphor layer fabrication, ensuring the phosphor layer does not block the aperture and does not affect its size or shape. Setting the second substrate thickness to 500 μm avoids additional special processing requirements, thereby reducing fabrication costs.

[0014] According to a second aspect of the present invention, a method for fabricating an electron beam splitter module is provided, comprising the following steps:

[0015] A first substrate and a second substrate are prepared on a single-crystal silicon wafer;

[0016] The first substrate is fitted with a pre-prepared mold to obtain a first assembly. The mold includes a base plate and columns protruding from the base plate that correspond to the aperture holes on the first substrate. The number, distribution, size, and shape of the columns are the same as the number, distribution, size, and shape of the aperture holes on the beam splitting module to be prepared.

[0017] A reflective layer is prepared on the side of the first substrate away from the mold using a vacuum coating process to obtain the second assembly;

[0018] A phosphor layer is coated on the reflective layer of the second assembly to obtain a third assembly, wherein the phosphor layer is formed of cathode ray phosphor;

[0019] The mold is removed from the third assembly to obtain the fourth assembly;

[0020] The second substrate is stacked with the first substrate in the fourth assembly to obtain the electron beam splitter module.

[0021] The electron beam splitter module fabrication method of the present invention involves segmenting the electron beam splitter module and simultaneously using a mold to fabricate the reflective layer and phosphor layer on the electron beam splitter module. The use of the mold ensures the precise position of the phosphor layer and reflective layer on the substrate, avoiding the problem of the phosphor layer and reflective layer blocking the aperture during the fabrication process. This ensures that the size and shape of the aperture will not change due to the obstruction of the phosphor layer and reflective layer, thereby ensuring the beam spot shape and accuracy of the electron beam passing through the aperture. Finally, it ensures that the reflective layer and phosphor layer on the electron beam splitter module do not affect the normal working performance of the electron beam splitter module. When the prepared electron beam splitter module is in operation, the blocked electron beam first strikes the phosphor layer, converting the energy of the high-speed electrons into light energy. Then, the reflective layer reflects the light emitted by the cathode phosphor onto the walls of the vacuum cavity. This transfers part of the electron beam energy irradiating the splitter module to the walls of the vacuum cavity, reducing the energy absorbed by the electron beam splitter module and lowering the thermal effect generated by the module. This effectively alleviates the problem of thermal deformation of the electron beam splitter module affecting the overall pattern accuracy of the electron beam column.

[0022] In some embodiments, the height of the mold column is greater than the height of the fourth assembly to be prepared.

[0023] Therefore, by setting it up in this way, it can be ensured that the height of the phosphor layer will not be higher than the height of the column when preparing the fourth assembly, thereby ensuring the effectiveness of the finally prepared electron beam splitter module during operation.

[0024] In some embodiments, the thickness of the upper base plate of the mold is 465 μm, and the height of the upper column of the mold is 35 μm.

[0025] Therefore, this design ensures that the overall height of the mold is 500μm, guaranteeing the structural strength of the mold during use and reducing the difficulty of mold processing.

[0026] In some embodiments, the first substrate, the second substrate, and the mold are all fabricated using MEMS technology.

[0027] Therefore, this setup ensures the processing accuracy of the first and second substrates, thereby improving the accuracy of the final beam-splitting module body.

[0028] In some embodiments, before obtaining the second assembly, the reflective layer on the side of the first substrate away from the mold is prepared using a vacuum coating process, and the process further includes:

[0029] The side of the first substrate furthest from the mold was cleaned in sequence with acetone, anhydrous ethanol, and deionized water.

[0030] Therefore, this setup ensures that no dust or other impurities will contaminate the reflective layer during its preparation, improving the flatness of the resulting reflective layer and guaranteeing the reflective effect. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. The actual dimensions of the mold base plate and column are not reproduced in the drawings, but are only schematic diagrams of the structure.

[0032] Figure 1 This is a schematic diagram of the overall structure of an electron beam splitting module according to an embodiment of the present invention;

[0033] Figure 2 This is a flowchart illustrating a method for preparing an electron beam splitter module according to an embodiment of the present invention.

[0034] Figure 3 This is a schematic diagram of the structure of a mold pre-prepared in the method for preparing an electron beam splitting module according to an embodiment of the present invention.

[0035] Figure 4 This is a schematic diagram of the structure of the first assembly prepared in step S12 in the method for preparing an electron beam splitting module according to an embodiment of the present invention.

[0036] Figure 5 This is a flowchart of the preparation steps of an electron beam splitter module preparation method according to another embodiment of the present invention;

[0037] Figure 6 This is a schematic diagram of the structure of the second assembly prepared in step S13 in the method for preparing an electron beam splitting module according to an embodiment of the present invention.

[0038] Figure 7 This is a flowchart illustrating the electron beam splitting module of one embodiment of the present invention during the preparation of a phosphor layer;

[0039] Figure 8 This is a schematic diagram of the structure in step S33 of the preparation method of the electron beam splitting module according to an embodiment of the present invention, in which phosphor adhesive is dropped onto the reflective layer during the preparation of the third assembly.

[0040] Figure 9This is a schematic diagram of the structure of the third assembly prepared in step S14 in the method for preparing an electron beam splitting module according to an embodiment of the present invention.

[0041] Figure 10 This is a schematic diagram of the structure of the fourth assembly prepared in step S15 in the method for preparing an electron beam splitting module according to an embodiment of the present invention.

[0042] Figure 11 This is a schematic diagram of the structure of the second substrate prepared in the method for preparing an electron beam splitting module according to an embodiment of the present invention;

[0043] Reference numerals in the attached figures: 1. Beam splitter module body; 11. First substrate; 12. Second substrate; 13. Aperture; 2. Reflective layer; 3. Phosphor layer; 31. Phosphor adhesive; 4. Mold; 41. Base plate; 42. Column; 5. First assembly; 6. Second assembly; 7. Third assembly; 8. Fourth assembly. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0045] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other.

[0046] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising" or "including" include not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0047] The present invention will now be described in further detail with reference to the accompanying drawings.

[0048] Figure 1 The overall structure of an electron beam splitter module according to an embodiment of the present invention is illustrated schematically, with reference to... Figure 1The electron beam splitting module of the present invention includes a beam splitting module body 1 and an emitting layer disposed on one side of the beam splitting module body 1. A phosphor layer 3 is also disposed on the reflective layer 2. It is understood that the beam splitting module body 1 has a plurality of apertures 13, which allow a portion of the electron beam emitted by the electron gun to pass through and intercept the remaining portion, thereby forming an array electron beam after the electron beam emitted by the electron gun passes through the beam splitting module body 1. The phosphor layer 3 is formed of cathode ray phosphor, which is a material that emits light under cathode ray excitation. Its material is a doped crystalline phosphor such as sulfides, oxides, and silicates, generally having high luminous efficiency, such as P47, (Zn,Cd)S:Ag, ZnS:Cu, Y2O2S:Eu3+, etc. The reflective layer 2 is generally formed of aluminum. When the electron beam emitted by the electron gun strikes the electron beam splitting module of this invention, the portion of the electron beam that is intercepted first collides with the phosphor layer 3. Since the cathode phosphor emits light when bombarded by electrons, it can convert the energy of the high-speed electrons into light energy. Thus, the phosphor layer 3 first converts a portion of the energy of the electron beam colliding with the main body 1 of the splitting module into light energy. After being converted into light energy, it is reflected towards the outside of the electron beam splitting module under the action of the reflective layer 2, illuminating the walls around the vacuum chamber with the light emitted by the cathode phosphor. This reduces the energy of the electron beam absorbed by the splitting module, lowers its heating effect, and effectively alleviates the problem of thermal deformation.

[0049] For the beam splitter module body 1, in some embodiments it can be divided into a first substrate 11 and a second substrate 12, wherein the first substrate 11 is the portion of the beam splitter module closer to the electron gun when the electron beam splitter module is installed, and the second substrate 12 is the portion of the beam splitter module further away from the electron gun when the electron beam splitter module is installed. For example, referring to... Figure 1As shown, the beam splitter module body 1 consists of a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are generally made of monocrystalline silicon. During the fabrication of the beam splitter module, the first substrate 11 acts as the substrate for the reflective layer 2 and the phosphor layer 3, while the second substrate 12 mainly serves to support and fix the components. The reflective layer 2 and the phosphor layer 3 are both disposed on the side of the first substrate 11 away from the second substrate 12. By combining the first substrate 11 and the second substrate 12, an integrated electron beam splitter module can be formed. Specifically, the first substrate 11 can be set to a thickness of approximately 20 μm, and the second substrate 12 can be set to a thickness of approximately 500 μm. This setting ensures the structural strength of the resulting beam-splitting module body 1. Simultaneously, setting the thickness of the first substrate 11 to 20 μm reduces the fabrication difficulty when preparing the phosphor layer 3 and reflective layer 2 using the mold 4, ensuring the structural strength of the mold 4 and the structural quality during the fabrication of the first substrate 11 and the phosphor layer 3 and reflective layer 2 on it. This prevents bridging of the phosphor adhesive 31 above the aperture 13 during the fabrication of the phosphor layer 3, ensuring that the phosphor layer 3 does not block the aperture 13 and does not affect its size and shape. Setting the thickness of the second substrate 12 to 500 μm avoids additional special processing requirements, thereby reducing fabrication costs.

[0050] For the reflective layer 2 and phosphor layer 3 disposed on the first substrate 11, the thickness of the reflective layer 2 can be designed to be about 1 μm, and the thickness of the phosphor layer 3 can be designed to be about 9 μm. This ensures that the phosphor layer 3 is not too thin, guaranteeing that its light conversion efficiency for the electron beam is not too low, thus reducing the heating effect of the electron beam. This also ensures that the reflective layer 2 is not too thin, guaranteeing its reflective effect on the phosphor layer 3 and preventing the light emitted by the phosphor layer 3 from being converted back into heat energy on the substrate. Simultaneously, the thickness of the phosphor layer 3 and reflective layer 2 is not too thick, effectively reducing the fabrication difficulty and the weight of the fabricated phosphor layer 3 and reflective layer 2, ensuring that the overall structural strength of the beam splitter module is not affected, and guaranteeing the lifespan of the beam splitter module.

[0051] According to another aspect of the invention, Figure 2 The flowchart illustrating the fabrication method of an electron beam splitter module according to an embodiment of the present invention is shown in the diagram. Figure 2 As shown, the method for preparing the electron beam splitter module of the present invention includes the following steps:

[0052] Step S11: A first substrate 11 and a second substrate 12 are prepared on a single-crystal silicon wafer;

[0053] Step S12: Fit the first substrate 11 with the pre-prepared mold 4 to obtain the first assembly 5, wherein the mold 4 includes a base plate 41 and pillars 42 protruding from the base plate 41 corresponding to the aperture holes 13 on the first substrate 11. The number, distribution, size and shape of the pillars 42 are the same as the number, distribution, size and shape of the aperture holes 13 on the beam splitting module to be prepared.

[0054] Step S13: A reflective layer 2 is prepared on the side of the first substrate 11 on the first assembly 5 away from the mold 4 using a vacuum coating process to obtain the second assembly 6;

[0055] Step S14: Coat the reflective layer 2 of the second assembly 6 with a phosphor layer 3 to obtain the third assembly 7, wherein the phosphor layer 3 is formed of cathode ray phosphor;

[0056] Step S15: Remove the mold 4 from the third assembly 7 to obtain the fourth assembly 8;

[0057] Step S16: Stack the second substrate 12 with the first substrate 11 in the fourth assembly 8 to obtain the electron beam splitter module.

[0058] In step S11, a first substrate 11 and a second substrate 12 for forming the beam splitter module body 1 are first prepared. The first substrate 11 and the second substrate 12 can be prepared simultaneously in this step. In another embodiment, the second substrate 12 can also be prepared after the reflective layer 2 and phosphor layer 3 on the first substrate 11 are prepared. This is because the preparation of the second substrate 12 does not affect the preparation of the reflective layer 2 and phosphor layer 3, and the second substrate 12 only needs to be prepared and stacked with the first substrate 11 to form the overall electron beam splitter module. Specifically, the first substrate 11 and the second substrate 12 are prepared using MEMS technology and are processed according to the size of the beam splitter module to be prepared, as well as the number, distribution, size, and shape of the apertures 13 on the beam splitter module. The specific steps for preparing the first substrate 11 and the second substrate 12 using MEMS technology can be implemented according to the relevant steps in the prior art, and will not be elaborated in this invention. Figure 11 The diagram illustrates the structure of the second substrate 12 prepared in the fabrication method of the electron beam splitter module according to an embodiment of the present invention. The thickness of the prepared first substrate 11 can be 20 μm, and the thickness of the prepared second substrate 12 can be 500 μm.

[0059] In step S12, the first substrate 11 needs to be fitted with the pre-prepared mold 4 to obtain the first assembly 5. The pre-prepared mold 4 includes a base plate 41 and pillars 42 protruding from the base plate 41 corresponding to the apertures 13 on the first substrate 11. The correspondence to the apertures 13 on the first substrate 11 means that the number, distribution, size, and shape of the apertures 13 on the first substrate 11 correspond, thus ensuring that the apertures 13 on the first substrate 11 are not blocked or obstructed during the subsequent fabrication of the reflective layer 2 and the phosphor layer 3. The pre-prepared mold 4 is also fabricated using single-crystal silicon. It is also fabricated using MEMS technology. For example, Figure 3 The diagram schematically illustrates the structure of the mold 4 pre-prepared in the fabrication method of the electron beam splitter module according to an embodiment of the present invention, with reference to... Figure 3 As shown, the mold 4 includes a base plate 41 and a column 42. The thickness of the base plate 41 of the prepared mold 4 can be about 465 μm, and the height of the column 42 is about 35 μm. Figure 3 The actual dimensions of the base plate 41 and column 42 of mold 4 are not reproduced in the diagram, but are only schematic representations of the structure. This allows the overall height to be approximately 500 μm, consistent with the dimensions of commonly available monocrystalline silicon, reducing processing difficulty and ensuring the structural strength of column 42 in subsequent fabrication processes. It is understandable that the thickness of the first substrate 11 is 20 μm, limited by the height of column 42 (35 μm) on mold 4. Considering the thickness of the phosphor layer 3 (9 μm) and reflective layer 2 (1 μm) above the first substrate 11, a certain height margin (5 μm) must be left in the height direction of column 42. This prevents the phosphor layer 3 from exceeding the thickness of column 42 and covering its top surface during fabrication, and also avoids bridging of the phosphor layer 3 above the aperture 13, ensuring that the phosphor layer 3 does not block the aperture 13 and does not affect its size and shape. Figure 4 The diagram illustrates the structure of the first assembly 5 prepared in step S12 of the electron beam splitting module preparation method according to an embodiment of the present invention. The first assembly 5 is an integral form formed by embedding the first substrate 11 into the mold 4 according to the correspondence between the aperture 13 and the column 42 on the mold 4.

[0060] Next, step S13 can be executed, in which the reflective layer 2 needs to be further prepared. Specifically, the reflective layer 2 is prepared on the side of the first substrate 11 on the first assembly 5 away from the mold 4. Since the height of the pillar 42 on the mold 4 is greater than the thickness of the first substrate 11, the reflective layer 2 can be prepared with a hole corresponding to the aperture 13 on the first substrate 11 due to the obstruction of the pillar 42 on the mold 4, so that the aperture 13 on the first substrate 11 will not be blocked or blocked.

[0061] In some embodiments, the first substrate 11 may be cleaned before performing step S13. Specifically, refer to... Figure 5 As shown, Figure 5 The diagram schematically illustrates the fabrication steps of an electron beam splitter module fabrication method according to another embodiment of the present invention. Figure 5 In the embodiment shown, before step S13, the following is also included:

[0062] Step S21: Clean the side of the first substrate 11 away from the mold 4 in sequence with acetone, anhydrous ethanol and deionized water.

[0063] Step S21 is mainly used to clean the first substrate 11 and the mold 4, thereby avoiding dust contamination during the preparation of the reflective layer 2 and / or phosphor layer 3. This ensures the purity and flatness of the first substrate 11 during the preparation of the reflective layer 2 and / or phosphor layer 3, ensuring that the first substrate 11 is free of oxides, which is beneficial for the adhesion of the reflective layer 2 and ensures the flatness of the prepared reflective layer 2 and / or phosphor layer 3. After cleaning, the first assembly 5 can be placed in a dry and ventilated environment to air dry, avoiding contamination from dust and other impurities during this period.

[0064] When preparing the reflective layer 2 in step S13, the prepared reflective layer 2 can be an aluminum film reflective layer 2. The aluminum film reflective layer 2 can be prepared using a vacuum deposition process. Specifically, the preparation process can be implemented as follows: First, the first assembly 5 is placed in a vacuum chamber, and then the surface of the second substrate 12 to be deposited with the aluminum film is exposed. Afterwards, when the vacuum level in the chamber reaches a certain requirement (≤10⁻⁴ Torr), the vacuum chamber is closed and evacuated, and a heating device is used to heat the first assembly 5, raising the temperature of the first substrate 11 to prepare for subsequent aluminum film deposition. Then, aluminum wire is placed in an evaporator, and the aluminum wire is heated using a laser or electron beam to vaporize it. In a vacuum environment, gaseous aluminum will deposit on the exposed surface of the first substrate 11, gradually forming an aluminum film. The thickness of the deposited aluminum film is controlled by adjusting the amount of aluminum wire and the deposition time. After reaching the required thickness, the reflective layer 2 is cooled. After cooling, the aluminum film deposition is completed, forming the reflective layer 2. The surface of the deposited aluminum film should have a smooth, bright white color. This invention uses a vacuum deposition process to prepare the reflective layer 2, which not only ensures the quality of the deposition but also guarantees the precise position of the deposited reflective layer 2, preventing it from affecting the size and shape of the aperture 13, ensuring uniform thickness of the reflective layer 2, and guaranteeing energy conversion efficiency. Figure 6 The following is an exemplary schematic diagram of the structure of the second assembly 6 prepared in step S13 of the method for preparing an electron beam splitting module according to an embodiment of the present invention. After the reflective layer 2 is completed, the second assembly 6 is obtained. The second assembly 6 is an integral part including the mold 4, the first substrate 11 embedded in the mold 4, and the reflective layer 2 formed on the first substrate 11.

[0065] After the reflective layer 2 is prepared, step S14 can be executed. In step S14, the phosphor layer 3 needs to be further prepared. Specifically, the phosphor layer 3 is prepared on the reflective layer 2 on the second assembly 6. Since the height of the pillar 42 on the mold 4 is greater than the thickness of the first substrate 11 with the reflective layer 2, the phosphor layer 3 can also have a hole corresponding to the aperture 13 on the first substrate 11 due to the obstruction of the pillar 42 on the mold 4 during preparation, so that the aperture 13 on the first substrate 11 will not be blocked or blocked.

[0066] In some embodiments, the reflective layer 2 can also be cleaned before performing step S14. The specific cleaning steps can be the same as in step S21, which involves sequentially cleaning the surface of the reflective layer 2 with acetone, anhydrous ethanol, and deionized water. After cleaning, the second assembly 6 can be placed in a dry and ventilated environment to air dry, avoiding contamination from dust and other impurities during this process.

[0067] Figure 7The schematic diagram illustrates the process of preparing phosphor layer 3 using the electron beam splitting module of one embodiment of the present invention, with reference to... Figure 7 As shown, in Figure 7 In the embodiment shown, when preparing the phosphor layer 3 in step S14, the preparation process can be implemented by including the following steps:

[0068] Step S31: Grind the cathode ray phosphor to obtain cathode ray phosphor particles;

[0069] Step S32: Prepare phosphor particles into phosphor paste 31;

[0070] Step S33: The phosphor adhesive 31 is dropped onto the reflective layer 2 on the second assembly 6 in a dotted distribution, and the second assembly 6 is rotated at high speed to use centrifugal force to spread the phosphor adhesive 31 evenly.

[0071] Step S34: Dry and cure the phosphor adhesive 31 that has been spread on the second assembly 6 to obtain the phosphor layer 3.

[0072] In step S31, the cathode ray phosphor to be used to prepare phosphor layer 3 is first ground to ensure that the particle size of the cathode ray phosphor meets the required specifications. Specifically, in step S31, a ball mill can be used to grind the cathode ray phosphor to control the particle size of the cathode ray phosphor particles obtained after grinding to be around 1 μm.

[0073] After grinding the cathode ray phosphor to obtain cathode ray phosphor particles, step S32 can be performed to prepare the cathode ray phosphor particles into phosphor paste 31, in preparation for preparing the phosphor layer 3 on the reflective layer 2 of the second assembly 6. Specifically, in step S32, when preparing the cathode ray phosphor particles into phosphor paste 31, the ground cathode ray phosphor particles can be mixed with adhesive, thickener, etc. in a certain proportion to form phosphor paste 31. The specific proportion can be referred to in relevant literature in the prior art, and will not be elaborated in this invention.

[0074] After preparing the phosphor adhesive 31, step S33 can be executed to spread the phosphor adhesive 31 evenly on the reflective layer 2 of the second assembly 6. Specifically, when spreading the phosphor adhesive 31 evenly on the reflective layer 2 of the second assembly 6, the phosphor adhesive 31 can be first dripped onto the reflective layer 2 in a dotted distribution, specifically, the phosphor adhesive 31 can be dripped between each column 42 of the second assembly 6. Figure 8 This exemplarily illustrates a structural diagram of the electron beam splitter module fabrication method according to an embodiment of the present invention, in which phosphor adhesive 31 is dropped onto the reflective layer 2 during the preparation of the third assembly 7 in step S33. (Refer to...) Figure 8As shown, when the phosphor adhesive 31 is dotted onto the reflective layer 2, it can be dotted intermittently, thereby reducing the amount of phosphor adhesive 31 used and ensuring that the phosphor adhesive 31 is evenly distributed on the reflective layer 2. Then, the second assembly 6 with the phosphor adhesive 31 is placed on a high-speed rotating table and rotated, causing the phosphor adhesive 31 to spread evenly on the surface of the reflective layer 2 under centrifugal force. This ensures the flatness of the phosphor adhesive 31 on the reflective layer 2, ensures the uniform thickness of the phosphor layer 3, and guarantees energy conversion efficiency.

[0075] Finally, step S34 is executed to dry and cure the phosphor adhesive 31 on the second assembly 6 to obtain the phosphor layer 3, forming a third assembly 7 on the mold 4 with the first substrate 11, the reflective layer 2 and the phosphor layer 3 arranged in sequence. Figure 9 The diagram schematically illustrates the structure of the third assembly 7 prepared in step S14 of the electron beam splitting module preparation method according to an embodiment of the present invention, with reference to... Figure 9 As shown, in the formed third assembly 7, the first substrate 11, the reflective layer 2, and the phosphor layer 3 are all on the mold 4. The phosphor layer 3 is located on the top layer to collide with the electron beam and convert the energy of the electron beam into light energy. The reflective layer 2 is below the phosphor layer 3, which can effectively reflect the light and reduce the energy of the electron beam received by the first substrate 11.

[0076] After the third assembly 7 is prepared, step S15 is executed. In step S15, the mold 4 of the third assembly 7 can be disassembled and removed to obtain the fourth assembly 8 formed by the combination of the first substrate 11, the reflective layer 2 and the phosphor layer 3. Figure 10 The diagram schematically illustrates the structure of the fourth assembly 8 prepared in step S15 of the electron beam splitting module preparation method according to an embodiment of the present invention, with reference to... Figure 10 As shown, the fourth assembly 8 consists only of a first substrate 11, a reflective layer 2, and a phosphor layer 3, which are stacked sequentially from bottom to top.

[0077] Finally, step S16 is executed. In step S16, the prepared second substrate 12 is simply stacked and combined with the fourth assembly 8 formed by the combination of the first substrate 11, the reflective layer 2 and the phosphor layer 3 to form the electron beam splitting module of the present invention.

[0078] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. An electron beam splitter module, characterized in that, It includes a beam splitter module body, a reflective layer is provided on one side of the beam splitter module body, and a phosphor layer is provided on the reflective layer, the phosphor layer being formed of cathode ray phosphor.

2. The electron beam splitter module according to claim 1, characterized in that, The beam splitter module body includes a first substrate and a second substrate, which are combined to form the beam splitter module body. The reflective layer is disposed on the side of the first substrate away from the second substrate.

3. The electron beam splitter module according to claim 1, characterized in that, The phosphor layer has a thickness of 9 μm.

4. The electron beam splitter module according to claim 1, characterized in that, The thickness of the reflective layer is 1 μm.

5. The electron beam splitter module according to claim 2, characterized in that, The thickness of the first substrate is 20 μm, and the thickness of the second substrate is 500 μm.

6. A method for fabricating an electron beam splitter module, characterized in that, Includes the following steps: A first substrate and a second substrate are prepared on a single-crystal silicon wafer; The first substrate is fitted with a pre-prepared mold to obtain a first assembly. The mold includes a base plate and columns protruding from the base plate that correspond to the aperture holes on the first substrate. The number, distribution, size, and shape of the columns are the same as the number, distribution, size, and shape of the aperture holes on the beam splitting module to be prepared. A reflective layer is prepared on the side of the first substrate away from the mold on the first assembly to obtain the second assembly; A phosphor layer is coated on the reflective layer of the second assembly to obtain a third assembly, wherein the phosphor layer is formed of cathode ray phosphor; The mold is removed from the third assembly to obtain the fourth assembly; The second substrate is stacked with the first substrate in the fourth assembly to obtain the electron beam splitter module.

7. The preparation method according to claim 6, characterized in that, The height of the mold column is greater than the height of the fourth assembly to be prepared.

8. The preparation method according to claim 7, characterized in that, The mold is fabricated using MEMS technology, wherein the thickness of the base plate is 465 μm and the height of the column is 35 μm.

9. The preparation method according to claim 6, characterized in that, The first substrate, the second substrate, and the mold were all fabricated using MEMS technology.

10. The preparation method according to claim 7, characterized in that, Before obtaining the second assembly, the method further includes: Preparing a reflective layer on the side of the first substrate away from the mold using a vacuum coating process; The side of the first substrate furthest from the mold was cleaned in sequence with acetone, anhydrous ethanol, and deionized water.

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