A semiconductor silicon wafer coating device and method thereof

Abstract

The present invention relates to the field of semiconductor processing technology, and specifically to a semiconductor silicon wafer coating device and method thereof, comprising a reaction chamber and a reaction cover connected to the reaction chamber, wherein multiple groups of partition blocks are installed inside the reaction chamber, and the multiple groups of partition blocks are used to divide the reaction chamber into an air flow channel that is connected to an air inlet pipe, and an air storage chamber is installed at the center of the air flow channel and at the bottom of the reaction cover, and an air storage device is arranged inside the air storage chamber, and multiple groups of exhaust pipes are annularly distributed on the inner wall of the reaction chamber in the air flow channel, and a quartz boat seat is rotatably installed outside the multiple groups of exhaust pipes, and an air outlet mechanism is connected to the bottom of the air storage chamber. The reacted gas is sequentially introduced into the multiple groups of quartz boat seats in the air flow channel through the air outlet mechanism, and the loading capacity is large, so that the reacted gas continuously contacts the surface of the silicon wafer to react chemically to form a deposit, and gradually grows on both sides of the silicon wafer to form a thin film, and the film is coated after two different degrees of contact with the silicon wafer, and there is no need to flip it, so that the thickness of the film on the surface of the silicon wafer is uniform.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a semiconductor silicon wafer coating device and method thereof. Background Art

[0002] Semiconductor silicon wafer coating is the process of coating a thin film on the surface of the silicon wafer, aiming to change the surface properties of the silicon wafer or increase its functionality. Currently, the thin film can be prepared mainly by chemical vapor deposition. One or more pre-reaction gases are introduced into the reaction chamber, and the required species are generated through chemical reactions. Then a deposition reaction occurs on the substrate surface, thereby forming a thin film on the base plate or substrate.

[0003] The coating device in the prior art 202211370731.6 includes a silicon wafer flipping device and a silicon wafer placing mechanism. The silicon wafer placing mechanism includes a placing frame and a flipping frame. By arranging the flipping frame, the flipping mechanism and the limiting mechanism on the placing frame, the silicon wafer placed on the flipping frame can be flipped through the flipping mechanism. The flipping mechanism provides power during flipping, and the two work together to flip the silicon wafer without moving the placing frame out of the processing chamber to the conversion chamber.

[0004] The above structure requires flipping the silicon wafer to ensure the molding effect after coating. However, flipping the semiconductor silicon wafer during coating can easily lead to chaotic airflow. The internal gas flows during the reaction, resulting in insufficient contact with the silicon wafer, which in turn leads to uneven uniformity of the thin film grown on the silicon wafer, affecting the coating effect. Summary of the invention

[0005] In view of this, the purpose of the present invention is to propose a semiconductor silicon wafer coating device and method to solve the problem that the internal gas flows during the reaction, resulting in insufficient contact with the silicon wafer, which in turn causes uneven uniformity of the thin film grown on the silicon wafer, affecting the coating effect.

[0006] Based on the above purpose, the present invention provides a semiconductor silicon wafer coating device, comprising a reaction chamber and a reaction cover connected to the reaction chamber, wherein both sides of the reaction chamber are provided with air inlet pipes, and one side of the reaction cover is connected to a gas tank for storing protective gas.

[0007] The reaction chamber is provided with a plurality of partition blocks, which are used to partition the reaction chamber into air flow channels that are connected to the air inlet pipe, and a resistance heater is also provided inside the partition blocks;

[0008] An air storage chamber is installed at the center of the air flow channel and at the bottom of the reaction cover;

[0009] The gas tank is connected to the top of the reaction cover through a connecting pipe, and the ends of the connecting pipe are respectively connected to the gas storage chamber and the reaction chamber;

[0010] Air inlets corresponding to the air inlet pipe are provided on both sides of the air storage chamber, and an air storage device is provided inside the air storage chamber, and the air storage device is used to react the gas input from the air inlet pipe and the connecting pipe in the air storage chamber;

[0011] The airflow channel has multiple groups of exhaust pipes distributed in an annular manner on the inner wall of the reaction chamber, and a quartz boat seat is rotatably mounted on the outside of the multiple groups of exhaust pipes, and a trapezoidal groove for clamping a silicon wafer is provided inside the quartz boat seat;

[0012] The bottom of the gas storage chamber is connected with a gas outlet mechanism, which is used to sequentially introduce the reacted gas into the multiple groups of quartz boat seats in the gas flow channel.

[0013] Preferably, the air storage device includes a rotating rod rotatably installed inside the air storage chamber, a fan blade is installed on the outside of the rotating rod, a metal rod is installed on the bottom of the fan blade, a magnet is arranged on the outside of the metal rod, and the magnet is installed in the air storage chamber.

[0014] Preferably, the tops of the gas storage chamber and the reaction chamber are both trapezoidal structures, and the magnet is an annular U-shaped structure.

[0015] Preferably, the air outlet mechanism includes a turntable clamped at the end of the rotating rod, a positioning column is installed at the bottom of the turntable, and an annular sleeve 1 and an annular sleeve 2 are simultaneously sleeved on the outside of the positioning column, and air outlet pipe 1 and air outlet pipe 2 are respectively installed on both sides of the annular sleeve 1 and the annular sleeve 2, and the air outlet pipe 1 and the air outlet pipe 2 slide inside the reaction chamber, and the air outlet pipe 1 and the air outlet pipe 2 are connected to the bottom of the air storage chamber through a hose.

[0016] Preferably, the insides of the annular sleeve 1 and the annular sleeve 2 are provided with sliding holes corresponding to the positioning columns, and the annular sleeve 1 and the annular sleeve 2 are arranged parallel to each other in the upper and lower parts.

[0017] Preferably, the air outlet pipe 1 and the air outlet pipe 2 have the same length, and the air outlet pipe 1 and the air outlet pipe 2 are both arranged corresponding to the quartz boat seat.

[0018] Preferably, an opening and closing piece is provided inside the exhaust pipe, the opening and closing piece is electrically connected to the gas storage device, and the opening and closing piece is used to control the outlet size of the exhaust pipe in the reaction chamber.

[0019] Preferably, the opening and closing member includes an electromagnet arranged inside the exhaust pipe, the electromagnet is electrically connected to the metal rod, a baffle is installed at the bottom end of the electromagnet, the baffle is slidably installed in the exhaust pipe, and the baffle is provided with a magnetic block with the same magnetic pole as the electromagnet.

[0020] Preferably, the baffle is arranged in a semicircular structure, a spring is connected between the baffle and the exhaust pipe, and the current generated by the metal rod is used to control the electromagnet to push the baffle.

[0021] The present specification also provides a method for the semiconductor silicon wafer coating device, comprising the following steps:

[0022] Pre-treat the silicon wafer in advance, place the silicon wafer to be deposited with thin film in a quartz boat, place the quartz boat in the reaction chamber, close the reaction cover, and then use a vacuum pump to evacuate the interior. The vacuum environment in the reaction chamber is first established to ensure accurate gas control.

[0023] An appropriate amount of reaction gas and carrying gas are introduced into the reaction chamber through the air inlet pipe, and protective gas is filled into the reaction chamber and the gas storage chamber through the gas tank, and the reaction chamber is heated through the resistance heater and the partition block;

[0024] During the process of introducing gas, part of the reaction gas reacts directly in the air flow channel in the reaction chamber, and then initially contacts the silicon wafer of the quartz boat seat to form a deposit. The other part enters the gas storage chamber through the air inlet. After the gas contacts the fan blade through the air inlet, it drives the fan blade and the rotating rod to rotate, increasing the internal gas mixing and reacting, avoiding turbulence in the flow of multiple gases and causing insufficient contact.

[0025] When the intake pipe introduces a proper amount of reaction gas and carrying gas into the reaction chamber, the fan blades rotate to drive the metal rod to rotate. The metal rod rotates inside the magnet and moves in the magnetic field, cutting the magnetic flux lines to generate current. When the electromagnet is connected to the current, it pushes the baffle to close the exhaust pipe and maintain the internal air flow mixing time.

[0026] When the gas is stored in the gas storage chamber, the fan blades push the gas in the reaction process in the gas storage chamber to be discharged through the hose and the first and second air outlet pipes. When the gas is discharged, the rotating rod drives the turntable to rotate. During the rotation process, the positioning column at the bottom drives the first and second annular sleeves to move continuously, so that the first and second air outlet pipes on both sides of the first and second annular sleeves are close to the multiple groups of quartz boat seats in turn along the rotation direction to discharge the gas.

[0027] After the reaction, the gas is introduced into multiple groups of quartz boats in the air flow channel in sequence, and continuously contacts the surface of the silicon wafer to produce chemical reactions to form deposits, which gradually grow on both sides of the silicon wafer to form thin films. After two different degrees of contact with the silicon wafer, the coating is carried out;

[0028] When the intake pipe stops taking in air and the fan blades can no longer drive the metal rod to rotate, the current generated by the metal rod disappears. When the electromagnet current disappears, the internal magnetic field disappears, driving the baffle to contract and allowing the exhaust pipe to evacuate air. At the same time, after the thin film deposition is completed, the silicon wafer needs to be cooled and subsequent processing is carried out to complete the coating.

[0029] The beneficial effects of the present invention are as follows: an appropriate amount of reaction gas and carrying gas are introduced into the reaction chamber through the air inlet pipe, and at the same time, a protective gas is charged into the reaction chamber and the gas storage chamber by using a gas tank. In the process of introducing the gas, part of the reaction gas reacts directly in the air flow channel in the reaction chamber, and initially contacts with the silicon wafer of the quartz boat seat to form a deposit, and the other part enters the gas storage chamber through the air inlet, and reacts inside the gas storage chamber through the gas storage device, thereby avoiding turbulence in the flow of multiple gases and causing insufficient contact;

[0030] During the reaction process, the reacted gas is introduced into multiple groups of quartz boats in the air flow channel through the gas outlet mechanism in sequence. The loading capacity is large, so that the reacted gas continuously contacts the surface of the silicon wafer to produce a chemical reaction, forming a sediment, and gradually grows on both sides of the silicon wafer to form a thin film. After two different degrees of contact with the silicon wafer for coating, there is no need to flip it, so that the thickness uniformity of the thin film on the surface of the silicon wafer is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0032] Figure 1 It is a schematic diagram of the overall three-dimensional structure of the present invention;

[0033] Figure 2 Schematic diagram of the internal structure of the reaction chamber of the present invention;

[0034] Figure 3 It is a schematic diagram of a half-section three-dimensional structure of the present invention as a whole;

[0035] Figure 4 It is a schematic diagram of a half-section planar structure of the present invention as a whole;

[0036] Figure 5 For the present invention Figure 4 A schematic diagram of the enlarged structure of part A;

[0037] Figure 6 It is a schematic diagram of the three-dimensional structure of the quartz boat seat of the present invention;

[0038] Figure 7 It is a schematic diagram of the internal cross-sectional structure of the quartz boat seat of the present invention;

[0039] Figure 8 It is a rear view structural schematic diagram of the whole present invention;

[0040] Fig. 9 It is a schematic diagram of the cross-sectional structure at BB of the present invention.

[0041] The markings in the figure are: 1. reaction chamber; 2. reaction cover; 3. air inlet pipe; 4. gas tank; 5. gas storage device; 51. rotating rod; 52. fan blade; 53. metal rod; 54. magnet; 6. air outlet mechanism; 61. turntable; 62. positioning column; 63. annular sleeve one; 64. air outlet pipe one; 65. annular sleeve two; 66. air outlet pipe two; 7. quartz boat seat; 8. trapezoidal groove; 9. gas storage chamber; 10. partition block; 11. air inlet; 12. exhaust pipe; 13. resistance heater; 14. connecting pipe; 15. opening and closing member; 16. electromagnet; 17. baffle. DETAILED DESCRIPTION

[0042] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0043] like Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 and Fig. 9 As shown, a semiconductor silicon wafer coating device comprises a reaction chamber 1 and a reaction cover 2 connected to the reaction chamber 1, both sides of the reaction chamber 1 are provided with an air inlet pipe 3, and one side of the reaction cover 2 is connected to a gas tank 4 for storing protective gas;

[0044] A plurality of partition blocks 10 are installed inside the reaction chamber 1. The plurality of partition blocks 10 are used to divide the reaction chamber 1 into air flow channels that are connected to the air inlet pipe 3. A resistance heater 13 is also arranged inside the partition blocks 10.

[0045] An air storage chamber 9 is installed at the center of the air flow channel and at the bottom of the reaction cover 2;

[0046] The gas tank 4 is connected to the top of the reaction cover 2 through a connecting pipe 14, and the ends of the connecting pipe 14 are connected to the gas storage chamber 9 and the reaction chamber 1 respectively;

[0047] Air inlets 11 corresponding to the air inlet pipe 3 are provided on both sides of the air storage chamber 9. A gas storage device 5 is provided inside the air storage chamber 9. The gas storage device 5 is used to react the gas input from the air inlet pipe 3 and the connecting pipe 14 in the air storage chamber 9.

[0048] In the air flow channel, multiple groups of exhaust pipes 12 are distributed in an annular manner on the inner wall of the reaction chamber 1. A quartz boat seat 7 is rotatably mounted outside the multiple groups of exhaust pipes 12. A trapezoidal groove 8 for clamping a silicon wafer is provided inside the quartz boat seat 7.

[0049] The bottom of the gas storage chamber 9 is connected to a gas outlet mechanism 6, which is used to sequentially introduce the reacted gas into the multiple groups of quartz boat seats 7 of the gas flow channel;

[0050] In this embodiment, an appropriate amount of reaction gas and carrying gas are introduced into the reaction chamber 1 through the air inlet pipe 3, and at the same time, the protective gas is filled into the reaction chamber 1 and the gas storage chamber 9 by using the gas tank 4. In the process of introducing the gas, part of the reaction gas directly reacts in the air flow channel in the reaction chamber 1, and initially contacts with the silicon wafer of the quartz boat seat 7 to form a deposit, and the other part enters the gas storage chamber 9 through the air inlet 11, and reacts inside the gas storage chamber 9 through the gas storage device 5, so as to avoid turbulence in the flow of multiple gases and cause insufficient contact;

[0051] During the reaction process, the reacted gas is introduced into the multiple groups of quartz boat seats 7 in the air flow channel through the gas outlet mechanism 6 in sequence. The loading capacity is large, so that the reacted gas continuously contacts the surface of the silicon wafer to produce a chemical reaction, forming a sediment, and gradually grows on both sides of the silicon wafer to form a thin film. After two different degrees of contact with the silicon wafer for coating, there is no need to flip it, so that the thickness of the thin film on the surface of the silicon wafer is uniform.

[0052] As an implementation method, Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, the gas storage device 5 includes a rotating rod 51 rotatably installed inside the gas storage chamber 9, a fan blade 52 is installed on the outside of the rotating rod 51, a metal rod 53 is installed at the bottom of the fan blade 52, a magnet 54 is arranged on the outside of the metal rod 53, and the magnet 54 is installed in the gas storage chamber 9.

[0053] Among them, the tops of the gas storage chamber 9 and the reaction chamber 1 are both trapezoidal structures, and the magnet 54 is an annular U-shaped structure. The trapezoidal structure of the gas storage chamber 9 is used to make the gas quickly converge at the top. At the same time, the trapezoidal structure of the reaction chamber 1 is combined with the gas storage chamber 9, so that when the protective gas in the gas tank 4 is filled, it is dispersed into the air flow channel.

[0054] In this embodiment, an appropriate amount of reaction gas and carrying gas are introduced into the reaction chamber 1 through the air inlet pipe 3, and at the same time, the protective gas is filled into the reaction chamber 1 and the gas storage chamber 9 by using the gas tank 4. In the process of introducing the gas, part of the reaction gas enters the gas storage chamber 9 through the air inlet 11. After the gas contacts the fan blade 52 through the air inlet 11, the fan blade 52 and the rotating rod 51 are driven to rotate, thereby increasing the mixing of the internal gas and storing it.

[0055] At the same time, the fan blade 52 rotates to drive the metal rod 53 to rotate. The metal rod 53 rotates inside the magnet 54 and moves in the magnetic field, cutting the magnetic flux lines to generate current.

[0056] As an implementation method, Figure 3 , Figure 4 , Figure 6 , Fig. 9As shown, the air outlet mechanism 6 includes a turntable 61 clamped at the end of the rotating rod 51, a positioning column 62 is installed at the bottom of the turntable 61, and an annular sleeve 1 63 and an annular sleeve 2 65 are simultaneously sleeved on the outside of the positioning column 62, and an air outlet pipe 1 64 and an air outlet pipe 2 66 are respectively installed on both sides of the annular sleeve 1 63 and the annular sleeve 2 65, and the air outlet pipe 1 64 and the air outlet pipe 2 66 slide inside the reaction chamber 1, and the air outlet pipe 1 64 and the air outlet pipe 2 66 are connected to the bottom of the air storage chamber 9 through a hose.

[0057] The inside of the annular sleeve 1 63 and the annular sleeve 2 65 is provided with sliding holes corresponding to the positioning column 62 , and the annular sleeve 1 63 and the annular sleeve 2 65 are vertically and horizontally arranged.

[0058] The air outlet pipe 1 64 and the air outlet pipe 2 66 have the same length, and the air outlet pipe 1 64 and the air outlet pipe 2 66 are both arranged corresponding to the quartz boat seat 7 .

[0059] In this embodiment, when gas is stored inside the gas storage chamber 9, the gas in the reaction process is pushed by the gas storage device 5 to be discharged through the hose and the air outlet pipe 1 64 and the air outlet pipe 2 66. When the gas is discharged, the rotating rod 51 drives the turntable 61 to rotate. During the rotation process, the positioning column 62 at the bottom drives the annular sleeve 1 63 and the annular sleeve 2 65 to continuously move, so that the air outlet pipes 1 64 and the air outlet pipes 2 66 on both sides of the annular sleeve 1 63 and the annular sleeve 2 65 are close to the multiple groups of quartz boat seats 7 in turn along the rotation direction for gas discharge. At this time, the gas discharged is the post-reaction gas, which can continuously contact the surface of the silicon wafer to undergo a chemical reaction and maintain full contact.

[0060] As an implementation method, Figure 6 , Figure 7 As shown, an opening and closing member 15 is disposed inside the exhaust pipe 12 . The opening and closing member 15 is electrically connected to the gas storage device 5 . The opening and closing member 15 is used to control the outlet size of the exhaust pipe 12 in the reaction chamber 1 .

[0061] Preferably, the opening and closing member 15 includes an electromagnet 16 arranged inside the exhaust pipe 12, the electromagnet 16 is electrically connected to the metal rod 53, a baffle 17 is installed at the bottom end of the electromagnet 16, the baffle 17 is slidably installed in the exhaust pipe 12, and the baffle 17 is provided with a magnetic block with the same magnetic pole as the electromagnet 16.

[0062] The baffle 17 is a semicircular structure, a spring is connected between the baffle 17 and the exhaust pipe 12 , and the current generated by the metal rod 53 is used to control the electromagnet 16 to push the baffle 17 .

[0063] In this embodiment, when the inlet pipe 3 introduces a proper amount of reaction gas and carrying gas into the reaction chamber 1, the fan blade 52 rotates to drive the metal rod 53 to rotate. The metal rod 53 rotates inside the magnet 54 and moves in the magnetic field to cut the magnetic flux lines to generate current, so that the electromagnet 16 is connected to the current and pushes the baffle 17 to close the exhaust pipe 12 and maintain the internal air flow mixing time.

[0064] When the air intake pipe 3 stops taking in air and the fan blade 52 cannot drive the metal rod 53 to rotate, the current generated by the metal rod 53 disappears, and the internal magnetic field of the electromagnet 16 disappears, driving the baffle 17 to contract, so that the exhaust pipe 12 is evacuated.

[0065] As an implementation method, Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 As shown, a method for coating a semiconductor silicon wafer includes:

[0066] Pre-treat the silicon wafer in advance, place the silicon wafer on which the thin film is to be deposited in the quartz boat 7, place the quartz boat 7 in the reaction chamber 1, and then close the reaction cover 2 and use a vacuum pump to evacuate the interior. The vacuum environment in the reaction chamber 1 is first established to ensure accurate gas control;

[0067] An appropriate amount of reaction gas and carrier gas are introduced into the reaction chamber 1 through the gas inlet pipe 3, and protective gas is charged into the reaction chamber 1 and the gas storage chamber 9 through the gas tank 4, and the reaction chamber 1 is heated through the resistance heater 13 and the partition block 10;

[0068] During the process of introducing the gas, part of the reaction gas reacts directly in the air flow channel in the reaction chamber 1, and then initially contacts the silicon wafer of the quartz boat seat 7 to form a deposit, and the other part enters the gas storage chamber 9 through the air inlet 11. After the gas contacts the fan blade 52 through the air inlet 11, the fan blade 52 and the rotating rod 51 are driven to rotate, thereby increasing the mixing of the internal gases and reacting, thereby avoiding turbulence in the flow of multiple gases and causing insufficient contact;

[0069] When the inlet pipe 3 introduces a proper amount of reaction gas and carrying gas into the reaction chamber 1, the fan blade 52 rotates to drive the metal rod 53 to rotate. The metal rod 53 rotates inside the magnet 54 and moves in the magnetic field to cut the magnetic flux lines to generate current, so that the electromagnet 16 is connected to the current and pushes the baffle 17 to close the exhaust pipe 12 and maintain the internal air flow mixing time;

[0070] When the gas is stored in the gas storage chamber 9, the fan blades 52 push the gas in the reaction process in the gas storage chamber 9 to be discharged through the hose and the air outlet pipe 1 64 and the air outlet pipe 2 66. When the gas is discharged, the rotating rod 51 drives the rotating disk 61 to rotate, and the positioning column 62 at the bottom drives the annular sleeve 1 63 and the annular sleeve 2 65 to move continuously during the rotation process, so that the air outlet pipes 1 64 and the air outlet pipes 2 66 on both sides of the annular sleeve 1 63 and the annular sleeve 2 65 are close to the multiple groups of quartz boat seats 7 in turn along the rotation direction for gas discharge;

[0071] The reacted gas is sequentially introduced into the multiple quartz boat seats 7 of the gas flow channel, and continuously contacts the surface of the silicon wafer to undergo chemical reactions to form deposits, and gradually grows on both sides of the silicon wafer to form a thin film, and contacts the silicon wafer twice to different degrees for coating;

[0072] When the air intake pipe 3 stops taking in air, and the fan blade 52 cannot drive the metal rod 53 to rotate, the current generated by the metal rod 53 disappears. After the current of the electromagnet 16 disappears, the internal magnetic field disappears, driving the baffle 17 to contract, so that the exhaust pipe 12 is evacuated. At the same time, after the thin film deposition is completed, the silicon wafer needs to be cooled and subsequent processing is carried out to complete the coating.

[0073] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present invention (including the claims) is limited to these examples. Under the concept of the present invention, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity.

[0074] The present invention is intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A semiconductor silicon wafer coating device, comprising a reaction chamber (1) and a reaction cover (2) connected to the reaction chamber (1), wherein both sides of the reaction chamber (1) are provided with air inlet pipes (3), and one side of the reaction cover (2) is connected to a gas tank (4) for storing protective gas, characterized in that: A plurality of groups of partition blocks (10) are installed inside the reaction chamber (1), and the plurality of groups of partition blocks (10) are used to partition the reaction chamber (1) into air flow channels that are connected to the air inlet pipe (3), and a resistance heater (13) is also arranged inside the partition blocks (10); An air storage chamber (9) is installed at the center of the air flow channel and at the bottom of the reaction cover (2); The gas tank (4) is connected to the top end of the reaction cover (2) via a connecting pipe (14), and the ends of the connecting pipe (14) are respectively connected to the gas storage chamber (9) and the reaction chamber (1); Air inlets (11) corresponding to the air inlet pipe (3) are provided on both sides of the air storage chamber (9), and an air storage device (5) is provided inside the air storage chamber (9). The air storage device (5) is used to react the gas input from the air inlet pipe (3) and the connecting pipe (14) in the air storage chamber (9); A plurality of exhaust pipes (12) are annularly distributed on the inner wall of the reaction chamber (1) in the air flow channel, a quartz boat seat (7) is rotatably mounted outside the plurality of exhaust pipes (12), and a trapezoidal groove (8) for clamping a silicon wafer is provided inside the quartz boat seat (7); The bottom of the gas storage chamber (9) is connected to a gas outlet mechanism (6), and the gas outlet mechanism (6) is used to sequentially introduce the reacted gas into the multiple groups of quartz boat seats (7) in the gas flow channel.

2. A semiconductor silicon wafer coating device according to claim 1, characterized in that: The gas storage device (5) comprises a rotating rod (51) rotatably mounted inside the gas storage chamber (9), a fan blade (52) is mounted outside the rotating rod (51), a metal rod (53) is mounted at the bottom of the fan blade (52), a magnet (54) is arranged outside the metal rod (53), and the magnet (54) is mounted inside the gas storage chamber (9).

3. A semiconductor silicon wafer coating device according to claim 2, characterized in that: The tops of the gas storage chamber (9) and the reaction chamber (1) are both trapezoidal structures, and the magnet (54) is an annular U-shaped structure.

4. A semiconductor silicon wafer coating device according to claim 2, characterized in that: The gas outlet mechanism (6) comprises a rotating disk (61) clamped at the end of the rotating rod (51), a positioning column (62) is installed at the bottom of the rotating disk (61), and an annular sleeve (63) and an annular sleeve (65) are sleeved on the outside of the positioning column (62), and an air outlet pipe (64) and an air outlet pipe (66) are installed on both sides of the annular sleeve (63) and the annular sleeve (65), respectively, and the air outlet pipe (64) and the air outlet pipe (66) slide inside the reaction chamber (1), and the air outlet pipe (64) and the air outlet pipe (66) are connected to the bottom of the gas storage chamber (9) through a hose.

5. A semiconductor silicon wafer coating device according to claim 4, characterized in that: The annular sleeve 1 (63) and the annular sleeve 2 (65) are provided with sliding holes corresponding to the positioning posts (62) inside, and the annular sleeve 1 (63) and the annular sleeve 2 (65) are arranged parallel to each other in the upper and lower parts.

6. A semiconductor silicon wafer coating device according to claim 4, characterized in that: The air outlet pipe 1 (64) and the air outlet pipe 2 (66) have the same length, and the air outlet pipe 1 (64) and the air outlet pipe 2 (66) are both arranged corresponding to the quartz boat seat (7).

7. The semiconductor silicon wafer coating device according to claim 4, characterized in that: An opening and closing member (15) is provided inside the exhaust pipe (12); the opening and closing member (15) is electrically connected to the gas storage device (5); and the opening and closing member (15) is used to control the size of the outlet of the exhaust pipe (12) in the reaction chamber (1).

8. The semiconductor silicon wafer coating device according to claim 7, characterized in that: The opening and closing member (15) comprises an electromagnet (16) arranged inside the exhaust pipe (12), the electromagnet (16) being electrically connected to the metal rod (53), a baffle (17) being installed at the bottom end of the electromagnet (16), the baffle (17) being slidably installed inside the exhaust pipe (12), and the baffle (17) being provided with a magnetic block having the same magnetic pole as the electromagnet (16).

9. A semiconductor silicon wafer coating device according to claim 8, characterized in that: The baffle (17) is arranged in a semicircular structure, a spring is connected between the baffle (17) and the exhaust pipe (12), and the current generated by the metal rod (53) is used to control the electromagnet (16) to push the baffle (17).

10. The method of a semiconductor silicon wafer coating device according to claim 8, characterized in that: The steps include: Pre-treat the silicon wafer in advance, place the silicon wafer on which the thin film is to be deposited in a quartz boat seat (7), place the quartz boat seat (7) in the reaction chamber (1), close the reaction cover (2), and then use a vacuum pump to evacuate the interior. The vacuum environment in the reaction chamber (1) is first established to ensure accurate gas control; An appropriate amount of reaction gas and carrying gas are introduced into the reaction chamber (1) through the gas inlet pipe (3), and at the same time, a protective gas is charged into the reaction chamber (1) and the gas storage chamber (9) using a gas tank (4), and the reaction chamber (1) is heated through a resistance heater (13) and a partition block (10); During the process of introducing the gas, part of the reaction gas directly reacts in the air flow channel in the reaction chamber (1) and initially contacts the silicon wafer of the quartz boat seat (7) to form a deposit, and the other part enters the gas storage chamber (9) through the air inlet (11). After the gas contacts the fan blade (52) through the air inlet (11), the fan blade (52) and the rotating rod (51) are driven to rotate, thereby increasing the mixing of the internal gases and reacting, thereby avoiding turbulence in the flow of multiple gases and causing insufficient contact; When the air inlet pipe (3) introduces an appropriate amount of reaction gas and carrier gas into the reaction chamber (1), the fan blade (52) rotates to drive the metal rod (53) to rotate. The metal rod (53) rotates inside the magnet (54) and moves in the magnetic field, cutting the magnetic flux lines to generate current, so that the electromagnet (16) is connected to the current and pushes the baffle (17), so that the exhaust pipe (12) is closed, and the internal air flow mixing time is maintained; When gas is stored in the gas storage chamber (9), the fan blades (52) push the gas in the reaction process in the gas storage chamber (9) to be discharged through the hose and the first air outlet pipe (64) and the second air outlet pipe (66). When the gas is discharged, the rotating rod (51) drives the rotating disk (61) to rotate, and the positioning column (62) at the bottom drives the first annular sleeve (63) and the second annular sleeve (65) to continuously move during the rotation process, so that the first air outlet pipe (64) and the second air outlet pipe (66) on both sides of the first annular sleeve (63) and the second annular sleeve (65) are close to the multiple groups of quartz boat seats (7) in the rotation direction to discharge gas; The reacted gas is sequentially introduced into a plurality of quartz boat seats (7) in the gas flow channel, and continuously contacts the surface of the silicon wafer to cause chemical reactions to form deposits, and gradually grows on both sides of the silicon wafer to form a thin film, and contacts the silicon wafer twice to different degrees to perform coating; When the air intake pipe (3) stops taking in air, and the fan blade (52) is unable to drive the metal rod (53) to rotate, the current generated by the metal rod (53) disappears, and the internal magnetic field disappears after the current of the electromagnet (16) disappears, driving the baffle (17) to contract, so that the exhaust pipe (12) is evacuated. At the same time, after the thin film deposition is completed, the silicon wafer needs to be cooled and subsequent processing is performed to complete the coating.

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