Gallium nitride voltage regulator circuit with wide supply voltage range

Abstract

The application discloses a wide power voltage range gallium nitride voltage stabilizing circuit and belongs to the field of voltage stabilizing circuits, which comprises a power supply VCC, a ground GND, a bias unit and an output unit. The wide power voltage range voltage stabilizing circuit realized by the enhancement mode gallium nitride HEMT can provide stable power voltage for the internal circuit module of a chip.

Description

Technical Field

[0001] This invention relates to the field of voltage regulator circuit technology, and in particular to a gallium nitride voltage regulator circuit with a wide power supply voltage range. Background Technology

[0002] Gallium nitride (GaN) is a recognized third-generation power semiconductor material. Compared with traditional silicon, it has greater electron mobility, higher critical breakdown electric field, and lower thermal conductivity. Therefore, GaN power devices are characterized by high speed, high reliability, low loss, and high temperature resistance. When applied to power conversion systems, they can significantly improve the switching speed, conversion efficiency, and power density of the system.

[0003] With advancements in gallium nitride (GaN) technology, GaN high- and low-voltage integration technology allows designers to integrate GaN low-voltage circuits and GaN high-voltage power devices onto a single substrate. In power systems, compared to board-level interconnects of silicon driver circuits, silicon control circuits, and GaN power devices, fully integrated GaN chips can reduce system area and cost, lower internal parasitic parameters, and improve power system reliability.

[0004] Because gallium nitride (GaN) process technology is not yet fully mature, P-type GaN transistors have low electron mobility and lack practical application value. Furthermore, commonly used GaN fully integrated processes cannot integrate PN junction diodes. Therefore, among currently available commercial GaN active devices, only N-type GaN HEMTs are available for designers. Although both enhancement-mode and depletion-mode N-type GaN HEMTs are available, using only enhancement-mode GaN devices in circuit design offers the advantage of lower manufacturing costs. Currently, the gate-source breakdown voltage of enhancement-mode GaN HEMTs is relatively low, around 6V. To accommodate a wider chip supply voltage range, an internal voltage regulator circuit is typically required to provide a power supply voltage of approximately 6V to power the internal circuitry of the GaN chip. Since GaN high- and low-voltage integrated processes lack common PN junction diodes and Zener diodes, implementing a voltage regulator circuit is difficult, and an external Zener diode is usually needed to assist in generating a stable power supply voltage. However, the bias current provided by this simple voltage regulator circuit to the Zener diode varies greatly with the change of the circuit supply voltage, causing the voltage across the Zener diode to become unstable. Summary of the Invention

[0005] This invention provides a gallium nitride (GaN) voltage regulator circuit with a wide power supply voltage range, overcoming the problems of narrow operating power supply voltage range and weak noise immunity of traditional GaN voltage regulator circuits, improving the reliability of integrated circuits based on GaN technology, and providing stable output VREG to GaN integrated circuits over a wide power supply voltage range.

[0006] This invention provides a gallium nitride voltage regulator circuit with a wide power supply voltage range, including: power supply VCC, ground GND, bias unit (315) and output unit (375);

[0007] The bias unit includes a first gallium nitride HEMT (325), a second gallium nitride HEMT (330), a third gallium nitride HEMT (335), a fourth gallium nitride HEMT (355), a first gallium nitride resistive device (360), a second gallium nitride resistive device (365), and a Zener diode (320). The connections are as follows: the anode of the Zener diode (320) is connected to ground (GND), the cathode is connected to the first gallium nitride HEMT (325), the second gallium nitride HEMT (330), and the source of the third gallium nitride HEMT (335); the gate and drain of the first gallium nitride HEMT (325) are connected to the fourth gallium nitride HEMT (355). The source of the gallium nitride HEMT (355), the gate and drain of the fourth gallium nitride HEMT (355) are connected to one end of the first gallium nitride resistive device (360) and one end of the second gallium nitride resistive device (365), the other end of the second gallium nitride resistive device (365) is connected to the power supply VCC, the gate and drain of the second gallium nitride HEMT (330) are connected to the other end of the first gallium nitride resistive device (360), the gate of the third gallium nitride HEMT (335) is connected to the gate and drain of the third gallium nitride HEMT (330), and the drain of the third gallium nitride HEMT (335) is connected to the power supply VCC;

[0008] The output unit includes a fifth gallium nitride HEMT (390), a third gallium nitride resistive device (380), and a gallium nitride process capacitor (385). The connection relationship is as follows: the drain of the fifth gallium nitride HEMT (390) is connected to the power supply VCC, the gate is connected to the drain and gate of the second gallium nitride HEMT (330), the source is connected to one end of the third gallium nitride resistive device (380) and one end of the gallium nitride process capacitor (385), the other end of the third gallium nitride resistive device (380) is connected to ground GND, the other end of the gallium nitride process capacitor 385 is connected to ground GND, and the source of the fifth gallium nitride HEMT (390) outputs a stable voltage VREG.

[0009] In one embodiment of the present invention, in the bias unit (315), a layer consisting of the first gallium nitride HEMT (325), the second gallium nitride HEMT (330), and the third gallium nitride HEMT (335) is replicated and superimposed on the layer. The replica transistor of the first gallium nitride HEMT (325) is the sixth gallium nitride HEMT (340), the replica transistor of the second gallium nitride HEMT (330) is the seventh gallium nitride HEMT (345), and the replica transistor of the third gallium nitride HEMT (335) is the eighth gallium nitride HEMT (350). After superposition, the gate and drain of the first gallium nitride HEMT (325) are connected to the source of the sixth gallium nitride HEMT (340). The gate and drain of the sixth gallium nitride HEMT (340) are connected to the source of the fourth gallium nitride HEMT (355), the gate and drain of the second gallium nitride HEMT (330) are connected to the source of the seventh gallium nitride HEMT (345), the gate and drain of the seventh gallium nitride HEMT (345) are connected to one end of the first gallium nitride resistive device (360), the drain of the third gallium nitride HEMT (335) is connected to the source of the eighth gallium nitride HEMT (350), the gate of the source of the eighth gallium nitride HEMT (350) is connected to the gate and drain of the seventh gallium nitride HEMT (345), and the drain of the eighth gallium nitride HEMT (350) is connected to the power supply VCC.

[0010] In one embodiment of the present invention, all gallium nitride HEMTs are enhancement-mode gallium nitride HEMTs.

[0011] In one embodiment of the present invention, the Zener diode (320) is an external Zener diode.

[0012] The gallium nitride voltage regulator circuit with a wide power supply voltage range according to the embodiments of the present invention has the following advantages and significant effects:

[0013] 1. When the power supply voltage changes, the reverse breakdown current of the Zener diode in this invention changes little, and this invention can provide a stable output voltage over a wide power supply voltage range.

[0014] 2. This invention has a stronger ability to suppress noise on the power supply.

[0015] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0017] Figure 1 This is a block diagram of a gallium nitride voltage regulator circuit.

[0018] Figure 2 This is a circuit diagram of a traditional gallium nitride voltage regulator circuit;

[0019] Figure 3 This is a first embodiment of a gallium nitride voltage regulator circuit with a wide power supply voltage range provided according to an embodiment of the present invention;

[0020] Figure 4 This is a second embodiment of a gallium nitride voltage regulator circuit with a wide power supply voltage range provided according to an embodiment of the present invention;

[0021] Figure 5 The wide power supply voltage range gallium nitride voltage regulator circuit provided according to the embodiments of the present invention differs from conventional gallium nitride voltage regulator circuits in I... Z -VCC characteristic curve. Detailed Implementation

[0022] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0023] Figure 1 The diagram shows the basic structure of a gallium nitride (GaN) voltage regulator circuit. A stable voltage is obtained through the bias unit 115 and connected to the gate of the enhanced GaN HEMT 190 in the output unit 175, ultimately resulting in a stable voltage VREG with a certain driving capability.

[0024] Figure 2 This is a traditional gallium nitride (GaN) voltage regulator circuit. It includes enhancement-mode gallium nitride (HEMT) devices 225 and 290, gallium nitride (GaN) resistive devices 230 and 280, a gallium nitride process capacitor 285, and an external Zener diode 220. Compared to the GaN resistive device 230, when the HEMT 225 is turned on, a small voltage change across it can generate a relatively large current change. Therefore, the change in power supply voltage mainly affects the GaN resistive device 230. The reverse breakdown current 265 of the Zener diode is approximately linearly related to the power supply voltage. The bias circuit output is greatly affected by the power supply voltage, and this circuit cannot operate over a wide power supply voltage range.

[0025] To address the aforementioned issues, this invention proposes a gallium nitride voltage regulator circuit with a wide power supply voltage range.

[0026] like Figure 3As shown, this wide power supply voltage range gallium nitride (GaN) regulator circuit includes: power supply VCC, ground GND, bias unit 315, and output unit 375. The drain and gate of the GaN HEMT 330 in bias unit 315 are connected to the gate of the GaN HEMT 390 in output unit 375, and output unit 375 outputs a stable voltage VREG from the source of GaN HEMT 390.

[0027] The bias unit includes a first gallium nitride (GaN) HEMT 325, a second GaN HEMT 330, a third GaN HEMT 335, a fourth GaN HEMT 355, a first GaN resistive device 360, a second GaN resistive device 365, and a Zener diode 320. The connections are as follows: the anode of the Zener diode 320 is connected to ground (GND), and the cathode is connected to the sources of the first GaN HEMT 325, the second GaN HEMT 330, and the third GaN HEMT 335. The gate and drain of the first GaN HEMT 325 are connected to the source of the fourth GaN HEMT 355. The gate and drain of the fourth GaN HEMT 355 are connected to one end of the first GaN resistive device 360 ​​and one end of the second GaN resistive device 365. The other end of the second GaN resistive device 365 is connected to the power supply VCC. The gate and drain of 330 are connected to the other end of the first gallium nitride resistive device 360, the gate of the third gallium nitride HEMT 335 is connected to the gate and drain of the third gallium nitride HEMT 330, and the drain of the third gallium nitride HEMT 335 is connected to the power supply VCC.

[0028] The output unit includes a fifth gallium nitride HEMT 390, a third gallium nitride resistive device 380, and a gallium nitride process capacitor 385. The connection relationship is as follows: the drain of the fifth gallium nitride HEMT 390 is connected to the power supply VCC, the gate is connected to the drain and gate of the second gallium nitride HEMT 330, the source is connected to one end of the third gallium nitride resistive device 380 and one end of the gallium nitride process capacitor 385, the other end of the third gallium nitride resistive device 380 is connected to ground GND, the other end of the gallium nitride process capacitor 385 is connected to ground GND, and the source of the fifth gallium nitride HEMT 390 outputs a stable voltage VREG.

[0029] In the embodiments of the present invention, all gallium nitride HEMTs are enhancement-mode gallium nitride HEMTs.

[0030] In an embodiment of the present invention, the Zener diode 320 is an external Zener diode.

[0031] exist Figure 3The system includes enhancement-mode gallium nitride (GaN) HEMTs 325, 330, 335, 355, and 390, GaN resistive devices 360, 365, and 380, a GaN process capacitor 385, and an external Zener diode 320. Analysis of traditional GaN voltage regulator circuits shows that when GaN HEMTs 325, 330, and 355 are turned on, the change in power supply voltage primarily affects GaN resistive device 365. The voltage across GaN resistive devices 360 and 330 primarily affects GaN resistive device 360. Therefore, the approximately linear current flowing through GaN resistive device 365, which is linear with the power supply voltage, mostly flows through the GaN HEMT 325 branch, while the current in the GaN HEMT 330 branch hardly changes with the power supply voltage. In this circuit, the resistance values ​​of the gallium nitride (GaN) resistive devices 360 and 365 are set very high, reducing the current in GaN resistive device 365. This means that even with significant changes in the power supply voltage, the current change in this branch is minimal. To ensure sufficient breakdown of the Zener diode, a GaN HEMT 335 branch is added, proportionally amplifying the current of the GaN HEMT 330 branch, which is almost unaffected by the power supply voltage. In this case, the current in the GaN HEMT 335 branch becomes the main component of the reverse breakdown current 365 of the Zener diode 320. However, the drain potential of the GaN HEMT 335 varies greatly with the power supply voltage, while its drain potential remains almost constant. Therefore, the proportional amplification of the current is not precise, and the error increases with increasing power supply voltage.

[0032] Furthermore, such as Figure 4 As shown, in bias unit 315, the first gallium nitride HEMT 325, the second gallium nitride HEMT 330, and the third gallium nitride HEMT 335 are replicated and superimposed on this level. The replica of the first gallium nitride HEMT 325 is the sixth gallium nitride HEMT 340, the replica of the second gallium nitride HEMT 330 is the seventh gallium nitride HEMT 345, and the replica of the third gallium nitride HEMT 335 is the eighth gallium nitride HEMT 350. After superposition, the gate and drain of the first gallium nitride HEMT 325 are connected to the source of the sixth gallium nitride HEMT 340, the gate and drain of the sixth gallium nitride HEMT 340 are connected to the source of the fourth gallium nitride HEMT 355, and the gate and drain of the second gallium nitride HEMT 330 are connected to the source of the seventh gallium nitride HEMT 345. The gate and drain of 345 are connected to one end of the first gallium nitride resistive device 360, the drain of the third gallium nitride HEMT 335 is connected to the source of the eighth gallium nitride HEMT 350, the gate of the source of the eighth gallium nitride HEMT 350 is connected to the gate and drain of the seventh gallium nitride HEMT 345, and the drain of the eighth gallium nitride HEMT 350 is connected to the power supply VCC.

[0033] exist Figure 4 The series includes enhanced gallium nitride (HEMT) devices 325, 330, 335, 340, 345, 350, 355, and 490, gallium nitride resistive devices 360, 365, and 480, gallium nitride process capacitor 485, and external Zener diode 420. Compared to the first embodiment, the circuit of the present invention adds a layer of gallium nitride (GaN) HEMTs 340, 345, and 350. Similar to the above analysis, the resistance values ​​of GaN resistive devices 360 and 365 are increased, reducing the current on GaN resistive device 365. Most of the current on GaN resistive device 365 flows through the GaN HEMT 325 branch, while the current in the GaN HEMT 330 branch hardly changes with the power supply voltage. At this time, the GaN HEMT 335 branch amplifies the almost voltage-independent current of the GaN HEMT 330 branch. Due to the presence of GaN HEMTs 345 and 350, the drain voltages of GaN HEMTs 330 and 335 are equal, reducing the error in the current amplification process and lowering the rate of change of the reverse breakdown current 465 of the Zener diode 420 with the power supply voltage.

[0034] Figure 5 The wide power supply voltage range gallium nitride voltage regulator circuit disclosed in this invention differs from conventional voltage regulator circuits in that... Z -VCC characteristic curve. Compared to the traditional gallium nitride voltage regulator circuit 200, the reverse breakdown current 465 of the Zener diode 420 in the wide power supply voltage range gallium nitride voltage regulator circuit 400 disclosed in this invention changes minimally with the power supply voltage, enabling stable output over a wide power supply voltage range; furthermore, this invention also significantly improves the power supply voltage noise suppression capability.

[0035] The gallium nitride (GaN) voltage regulator circuit with a wide power supply voltage range proposed in the embodiments of the present invention, which is implemented using an enhanced gallium nitride (HEMT), can provide a stable power supply voltage for the internal circuit modules of the chip.

[0036] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0037] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.

Claims

1. A gallium nitride voltage regulator circuit with a wide power supply voltage range, characterized in that, It comprises: a power supply VCC, a ground GND, a biasing unit (315) and an output unit (375); The biasing unit comprises a first gallium nitride HEMT (325), a second gallium nitride HEMT (330), a third gallium nitride HEMT (335), a fourth gallium nitride HEMT (355), a first gallium nitride resistive device (360), a second gallium nitride resistive device (365) and a voltage stabilizing diode (320); the connection relationship is that the anode of the voltage stabilizing diode (320) is connected to the ground GND, and the cathode is connected to the source of the first gallium nitride HEMT (325), the second gallium nitride HEMT (330) and the third gallium nitride HEMT (335); the gate and drain of the first gallium nitride HEMT (325) are connected to the source of the fourth gallium nitride HEMT (355), the gate and drain of the fourth gallium nitride HEMT (355) are connected to one end of the first gallium nitride resistive device (360) and one end of the second gallium nitride resistive device (365), the other end of the second gallium nitride resistive device (365) is connected to the power supply VCC, the gate and drain of the second gallium nitride HEMT (330) are connected to the other end of the first gallium nitride resistive device (360), the gate of the third gallium nitride HEMT (335) is connected to the gate and drain of the second gallium nitride HEMT (330), and the drain of the third gallium nitride HEMT (335) is connected to the power supply VCC; The output unit comprises a fifth gallium nitride HEMT (390), a third gallium nitride resistive device (380) and a gallium nitride process capacitor (385); the connection relationship is that the drain of the fifth gallium nitride HEMT (390) is connected to the power supply VCC, the gate is connected to the drain and gate of the second gallium nitride HEMT (330), the source is connected to one end of the third gallium nitride resistive device (380) and one end of the gallium nitride process capacitor (385), the other end of the third gallium nitride resistive device (380) is connected to the ground GND, the other end of the gallium nitride process capacitor 385 is connected to the ground GND, and the source of the fifth gallium nitride HEMT (390) outputs a stable voltage VREG.

2. The gallium nitride voltage stabilizing circuit of a wide power supply voltage range according to claim 1, characterized in that, In the bias unit (315), the first GaN HEMT (325), the second GaN HEMT (330) and the third GaN HEMT (335) are copied and stacked on top of the level, the copied tube of the first GaN HEMT (325) is the sixth GaN HEMT (340), the copied tube of the second GaN HEMT (330) is the seventh GaN HEMT (345), and the copied tube of the third GaN HEMT (335) is the eighth GaN HEMT (350). After stacking, the gate and drain of the first GaN HEMT (325) are connected to the source of the sixth GaN HEMT (340), the gate and drain of the sixth GaN HEMT (340) are connected to the source of the fourth GaN HEMT (355), the gate and drain of the second GaN HEMT (330) are connected to the source of the seventh GaN HEMT (345), the gate and drain of the seventh GaN HEMT (345) are connected to one end of the first GaN resistor (360), the drain of the third GaN HEMT (335) is connected to the source of the eighth GaN HEMT (350), the gate of the eighth GaN HEMT (350) is connected to the gate and drain of the seventh GaN HEMT (345), and the drain of the eighth GaN HEMT (350) is connected to the power supply VCC.

3. The wide supply voltage range GaN voltage regulator circuit according to claim 1 or 2, wherein All GaN HEMTs are enhancement mode GaN HEMTs.

4. The wide supply voltage range GaN voltage regulator circuit according to claim 1, wherein The voltage regulator diode (320) is an external voltage regulator diode.

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