A method of material processing coupling an ultrasonic energy field and a thermal energy field

Abstract

The application discloses a material processing method of coupling ultrasonic energy field and thermal energy field, comprising the following steps: S1, fixing the material to be processed on a workbench, adjusting the amplitude and frequency of an ultrasonic device, and performing ultrasonic processing on the material to be processed; S2, performing sample preparation on the subsurface of the processed region of the material to be processed, judging whether the sample preparation has processing defects by using a transmission electron microscope, and obtaining the threshold value of the amplitude and frequency of ultrasonic processing; and S3, adjusting the amplitude and frequency of the ultrasonic device according to the threshold value of the amplitude and frequency in step S2, adjusting the temperature and time of a heating table at the same time, and performing processing of coupling ultrasonic energy field and thermal energy field on the material to be processed. Compared with the method containing chemical elements such as polishing liquid in the existing processing technology, the application avoids environmental pollution, reduces energy consumption, effectively controls and eliminates the processing damage of the material surface, and promotes the development of a lossless surface green processing technology.

Description

Technical Field

[0001] This invention relates to the field of machining technology, and in particular to a material processing method that couples an ultrasonic energy field and a thermal energy field. Background Technology

[0002] Advanced materials such as optical materials and semiconductor materials have broad application prospects in cutting-edge fields such as aerospace, industrial electronics, and clean energy due to their excellent physical and chemical properties. These material components place extremely high demands on processing technology, such as achieving sub-nanometer level surface roughness and eliminating surface / sub-surface defects. Therefore, the theory and technology of high-quality ultra-precision machining have received widespread attention from academia and industry.

[0003] Currently, the surface processing of advanced materials such as optical materials and semiconductor materials, including single-crystal silicon, fused silica, and silicon carbide, mainly adopts traditional grinding and chemical mechanical polishing techniques. The processing process is prone to causing deep damage to the surface and subsurface, and it is impossible to effectively control intrinsic material defects such as phase transitions, crystal defects, and local densification. In addition, the harmful chemical elements that must be used in the polishing fluid cause serious pollution and energy consumption.

[0004] On the other hand, in order to achieve the goal of precision / ultra-precision machining of difficult-to-machine materials, existing technologies also include laser-assisted cutting and grinding. However, these methods cannot effectively reduce surface and subsurface damage to the machined materials. In addition, the machining process parameters of the applied energy field are numerous, and the intensity of the energy field, the machining hysteresis distance, and the cutting depth can all cause problems for the machining process.

[0005] The above problems have severely restricted the manufacturing performance of advanced material components such as optical materials and semiconductor materials and their application in cutting-edge fields. Therefore, it is urgent to invent a processing method based on multi-energy field coupling to significantly reduce or avoid surface / subsurface processing defects of materials and significantly improve the processing quality and performance of advanced material components.

[0006] In view of this, existing non-destructive processing methods for advanced materials such as optical materials and semiconductor materials still need to be further improved. Summary of the Invention

[0007] This invention proposes a material processing method that couples ultrasonic energy fields and thermal energy fields, solving the technical problems of complex existing processing techniques, pollution caused by polishing fluid, and difficulty in controlling and eliminating processing damage.

[0008] To address the above problems, the present invention proposes the following technical solution:

[0009] On one hand, the present invention provides a material processing method that couples an ultrasonic energy field and a thermal energy field, comprising the following steps:

[0010] S1. Fix the material to be processed on the worktable, adjust the amplitude A0 and frequency f0 of the ultrasonic device, and perform ultrasonic processing on a local area of ​​the surface of the material to be processed.

[0011] S2. Next, prepare a sample of the subsurface of the processed area of ​​the material to be processed, and determine whether there are any processing defects in the sample. If there are no processing defects, proceed to step S3 to perform the overall actual processing of the material to be processed; if there are processing defects, repeat step S1 to obtain the threshold A of the amplitude and frequency of ultrasonic processing. 临界 and f 临界 ;

[0012] S3. Referring to the threshold values ​​of amplitude and frequency described in step S2, adjust the amplitude and frequency of the ultrasonic device, and simultaneously adjust the temperature and time of the heating stage to process the entire material to be processed by coupling the ultrasonic energy field and the thermal energy field, and repair the processed areas with processing defects.

[0013] Based on this technical solution, and more preferably, it further includes step S3', which specifically includes the following steps:

[0014] Referring to the threshold values ​​of amplitude and frequency described in step S2, adjust the amplitude and frequency of the ultrasonic device. After ultrasonic processing is completed, keep the gas environment of the worktable stable, and then adjust the temperature and time of the heating table to process the material to be processed by thermal energy field and repair the processed areas with processing defects.

[0015] Based on this technical solution, and further preferably, in step S2, the threshold A for obtaining the amplitude and frequency of ultrasonic processing is... 临界 and f 临界 Adjustments are made based on the occurrence of processing defects, using A0 and f0 as references.

[0016] Based on this technical solution, and further preferably, the processing defects include stacking faults, dislocations, localized densification, and the formation of amorphous layers.

[0017] Based on this technical solution, and more preferably, the material to be processed includes optical materials and semiconductor materials.

[0018] Based on this technical solution, and more preferably, the amplitude of the ultrasonic device is 0-10μm and the frequency is 20kHz-300kHz.

[0019] Based on this technical solution, and more preferably, the temperature of the heating table is 100℃~1000℃.

[0020] Based on this technical solution, and further preferably, maintaining a stable gas environment on the workbench includes using a vacuum pump to evacuate or introducing an inert gas.

[0021] Based on this technical solution, and further preferably, the vacuum pump evacuates to a vacuum level of 10. -6 Pa~10 -1 Pa.

[0022] Based on this technical solution, and more preferably, the inert gas includes nitrogen or argon.

[0023] Compared with the prior art, the technical effects achieved by the present invention include:

[0024] This invention discloses a method for processing non-destructive surfaces. It controls surface processing defects through ultrasonic energy field loading; for example, in monocrystalline silicon, only amorphization occurs, avoiding the generation of processing defects such as dislocations and stacking faults. Furthermore, a thermal energy field is used to repair the amorphous layer on the surface back to its original microstructure, eliminating surface processing damage caused by ultrasonic energy field loading. This method eliminates the use of polishing fluids containing harmful chemical elements in current production processes, thereby avoiding environmental pollution, reducing carbon dioxide emissions, and decreasing energy consumption. This invention processes non-destructive surfaces through the coupling of ultrasonic and thermal energy fields, avoiding the use of polishing fluids containing harmful chemical elements, and can control and eliminate surface processing damage, promoting the development of green processing for non-destructive surfaces. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the material processing device that couples ultrasonic energy fields and thermal energy fields according to the present invention;

[0026] Figure 2 This is a schematic diagram illustrating the processing defects that occur in the processed area of ​​the material to be processed according to the present invention;

[0027] Figure 3 This is a schematic diagram illustrating the repair of processing defects in the processed area of ​​the material to be processed according to the present invention;

[0028] Figure 4 This is a schematic diagram showing how the amorphous layer of the material to be processed in this invention is repaired into a microstructure.

[0029] 1-Surface to be processed; 2-Processed surface; 3-Amorphous layer; 3'-Second amorphous layer; 4-Original structure. Detailed Implementation

[0030] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art based on the technology to which the claims of the present invention pertain without creative effort are within the scope of protection of the present invention.

[0031] It should be understood that the terminology used in this specification of embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of the invention. As used in this specification of embodiments of the invention and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0032] Example 1

[0033] This embodiment provides a material processing method that couples an ultrasonic energy field and a thermal energy field, including the following steps:

[0034] S1. Fix the material to be processed on the worktable, such as... Figure 1 The diagram shows the material processing apparatus described in this embodiment. The material to be processed is placed on the worktable and fixed with a clamp. Then, the amplitude A0 and frequency f0 of the ultrasonic device are adjusted to perform ultrasonic processing on the subsurface of a local area of ​​the material to be processed. The material to be processed includes optical materials and semiconductor materials, such as single crystal silicon, fused silica, or silicon carbide.

[0035] S2. Next, prepare a sample of the subsurface of the processed area of ​​the material to be processed, and use a transmission electron microscope to perform high-resolution atomic-level imaging of the processed area of ​​the material to be processed. Based on the results of the high-resolution atomic-level imaging, determine whether the sample has processing defects such as stacking faults or dislocations, and whether only an amorphous layer is generated without other forms of damage. If there are no processing defects, proceed to step S3 for overall actual processing; if there are processing defects, repeat step S1 to obtain the threshold A of the amplitude and frequency of ultrasonic processing. 临界 and f 临界 ;

[0036] S3, Refer to the threshold A of amplitude and frequency described in step S2. 临界 and f 临界 Step S2 describes obtaining the threshold A for the amplitude and frequency of ultrasonic processing. 临界 Greater than A0, f 临界 The amplitude, frequency A0, and f0 of the ultrasonic device are adjusted to a value greater than f0, while the temperature T and time t of the heating stage are adjusted to process the material to be processed by coupling the ultrasonic energy field and the thermal energy field. Specifically, in the actual processing stage, the material to be processed is fixed on the heating stage, and a vacuum pump is used to evacuate the vacuum to a degree of 10. -6 Pa~10 -1 Pa stabilizes the gas environment in the processing chamber. The temperature T of the heating table is 100℃~1000℃, and constant temperature heating is maintained. The heating time t is 5 minutes, and the processed areas with processing defects are repaired.

[0037] In a preferred embodiment, a material processing method coupling an ultrasonic energy field and a thermal energy field further includes the following steps:

[0038] S1. Fix the material to be processed on the worktable. Place the material to be processed on the worktable and fix it with a clamp. Then adjust the amplitude A0 and frequency f0 of the ultrasonic device to perform ultrasonic processing on the local subsurface of the material to be processed. The material to be processed includes optical materials and semiconductor materials, such as single crystal silicon, fused silica or silicon carbide.

[0039] S2. Next, prepare a sample of the subsurface of the processed area of ​​the material to be processed, and use a transmission electron microscope to perform high-resolution atomic-level imaging of the processed area of ​​the material to be processed. Based on the results of the high-resolution atomic-level imaging, determine whether the sample has processing defects such as stacking faults or dislocations, and whether only an amorphous layer is generated without other forms of damage. If there are no processing defects, proceed to step S3 for overall actual processing; if there are processing defects, repeat step S1 to obtain the threshold A of the amplitude and frequency of ultrasonic processing. 临界 and f 临界 ;

[0040] S3', the threshold A of amplitude and frequency mentioned in step S2 临界 and f 临界 Step S2 describes obtaining the threshold A for the amplitude and frequency of ultrasonic processing. 临界 Greater than A0, f 临界 Greater than f 00 The amplitude A0 and frequency f0 of the ultrasonic device are adjusted to perform ultrasonic processing on the material to be processed. After ultrasonic processing, inert nitrogen gas is introduced for half an hour to maintain a stable gas environment in the processing chamber. Then, the temperature T and time t of the heating table are adjusted. The temperature T of the heating table is 100℃~1000℃ and the heating time t is 5 minutes to process the material to be processed by the thermal energy field and repair the processed areas with processing defects.

[0041] Step S3' specifically includes the actual processing stage, where the material to be processed is fixed on the worktable using a fixture, and the threshold A of amplitude and frequency described in step S2 is used. 临界 and f 临界 The amplitude A0 and frequency f0 of the ultrasonic device are adjusted to perform ultrasonic processing on the material to be processed. After ultrasonic processing, inert nitrogen gas is introduced into the processing chamber for half an hour to stabilize the gas environment inside the processing chamber. Then, the temperature T and time t of the heating table are adjusted to perform constant temperature heating treatment on the material to be processed. This not only repairs the surface of the processed area with processing defects, making it the microstructure of the original material, but also effectively adjusts the heating time t according to the form of the processing defects and the recovery conditions.

[0042] In a preferred embodiment, the gas introduced in step S3' can also be an inert gas such as argon. This has the advantage of maintaining a stable gas environment in the processing chamber, which is beneficial for subsequent thermal field processing and repair.

[0043] In a preferred embodiment, a material processing method coupling an ultrasonic energy field and a thermal energy field further includes the following steps:

[0044] S1. Fix the material to be processed on the worktable. Place the material to be processed on the worktable and fix it with a clamp. Then adjust the amplitude A0 and frequency f0 of the ultrasonic device to perform ultrasonic processing on the local subsurface of the material to be processed. The material to be processed includes optical materials and semiconductor materials, such as silicon carbide.

[0045] S2. Next, prepare a sample of the subsurface of the processed area of ​​the material to be processed, and use a transmission electron microscope to perform high-resolution atomic-level imaging of the processed area of ​​the material to be processed. Based on the results of the high-resolution atomic-level imaging, determine whether the sample has processing defects such as stacking faults or dislocations, and whether only an amorphous layer is generated without other forms of damage. If there are no processing defects, proceed to step S3 for overall actual processing; if there are processing defects, repeat step S1 to obtain the threshold A of the amplitude and frequency of ultrasonic processing. 临界 and f 临界 ;

[0046] In step S2, a focused ion beam (FIB) method is used to prepare a sample of the processed area of ​​silicon carbide material on the surface 1 to be processed. Then, a transmission electron microscope (TEM) is used to perform high-resolution atomic-level imaging of the subsurface 2 of the processed area of ​​silicon carbide material, such as... Figure 2 As shown, it is determined that the processed surface 2 of the material has an amorphous layer 3 and no other form of damage, and the original structure is 4. At this time, the threshold A of the ultrasonic processing amplitude and frequency can be obtained. 临界 and f 临界 ;

[0047] S3', the threshold A of amplitude and frequency mentioned in step S2 临界 and f 临界 Step S2 describes obtaining the threshold A for the amplitude and frequency of ultrasonic processing. 临界 Greater than A0, f 临界 The amplitude A0 and frequency f0 of the ultrasonic device are adjusted to a value greater than f0 to perform ultrasonic processing on the material to be processed; the amplitude A0 of the ultrasonic device is 0-10μm, and the frequency f0 is 20kHz-300kHz. After ultrasonic processing, a vacuum pump is used to evacuate the vacuum until the vacuum level drops to 10. -1Pa, to maintain a stable gas environment in the processing chamber, then adjust the temperature T and time t of the heating table. The temperature T of the heating table is 100℃~1000℃ and the heating time t is 5 minutes. The material to be processed is processed by the thermal energy field, and the processed areas with processing defects are repaired.

[0048] like Figure 3 As shown, after ultrasonic processing in step S2, the processing defects on the surface of the material to be processed are transformed into a second amorphous layer 3' after thermal energy field processing. This is the repaired amorphous layer. At this time, the microstructure of the second amorphous layer 3' is consistent with the original structure 4.

[0049] In a preferred embodiment, a material processing method coupling an ultrasonic energy field and a thermal energy field further includes the following steps:

[0050] S1. Fix the material to be processed on the worktable. Place the material to be processed on the worktable and fix it with a clamp. Then adjust the amplitude A0 and frequency f0 of the ultrasonic device to perform ultrasonic processing on the subsurface of a local area of ​​the material to be processed. The material to be processed includes semiconductor materials, such as silicon carbide.

[0051] S2. Next, prepare a sample of the subsurface of the processed area of ​​the silicon carbide material, and use a transmission electron microscope to perform high-resolution atomic-level imaging of the processed area of ​​the material to be processed. Based on the results of the high-resolution atomic-level imaging, determine whether the sample has processing defects such as stacking faults or dislocations, and whether only an amorphous layer is generated without other forms of damage. If there are no processing defects, proceed to step S3 to perform the actual processing of the entire silicon carbide material; if there are processing defects, repeat step S1 to obtain the threshold A of the amplitude and frequency of ultrasonic processing. 临界 and f 临界 ;

[0052] S3', the threshold A of amplitude and frequency mentioned in step S2 临界 and f 临界 Step S2 describes obtaining the threshold A for the amplitude and frequency of ultrasonic processing. 临界 Greater than A0, f 临界 The amplitude A0 and frequency f0 of the ultrasonic device are adjusted to be greater than f0 to perform ultrasonic processing on the silicon carbide material. After ultrasonic processing, inert nitrogen gas is introduced for half an hour to maintain a stable gas environment in the processing chamber. Then, the temperature T and time t of the heating table are adjusted. The temperature T of the heating table is 100℃~1000℃ and the heating time t is 5 minutes to perform thermal energy field processing on the silicon carbide material and repair the processed areas with processing defects.

[0053] Step S3' specifically includes the actual processing stage, where the silicon carbide material is fixed to the worktable using a fixture, and the amplitude and frequency threshold A described in step S2 are... 临界 and f 临界 The amplitude A0 and frequency f0 of the ultrasonic device are adjusted to perform ultrasonic processing on the material to be processed. After ultrasonic processing, inert nitrogen gas is introduced into the processing chamber for half an hour to stabilize the gas environment inside the processing chamber. Then, the temperature T of the heating table is adjusted to 800℃ and the time t is adjusted to perform constant temperature heating treatment on the material to be processed. The purpose of this is not only to repair the surface of the processed area with processing defects, making it the microstructure of the original material, but also to effectively adjust the heating time t according to the form of processing defects and recovery conditions.

[0054] like Figure 4 As shown in the diagram, the amorphous layer of the material to be processed in this invention is repaired into a microstructure. It can be seen that after ultrasonic processing in step S2, the amorphous layer processing defects generated on the surface of the material to be processed are repaired and transformed into the microstructure of the original material after thermal energy field processing.

[0055] In summary, this invention provides a material processing method that couples an ultrasonic energy field and a thermal energy field. It utilizes the ultrasonic energy field to control the processing defects on the subsurface of the material, and then uses the thermal energy field to further repair the amorphous layer generated on the subsurface into the original microstructure, thereby eliminating the processing damage caused by the ultrasonic energy field loading. Compared with existing processing methods that contain chemical elements such as polishing fluids, this method avoids environmental pollution, reduces energy consumption, effectively controls and eliminates processing damage on the material surface, and promotes the development of non-destructive surface green processing technology.

[0056] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A material processing method coupling an ultrasonic energy field and a thermal energy field, characterized in that, Includes the following steps: S1. Fix the material to be processed on the worktable and adjust the amplitude of the ultrasonic device. and frequency The surface of a local area of ​​the material to be processed is ultrasonically processed; the ultrasonic processing includes ultrasonic vibration with a vibration frequency of 20kHz-300kHz. S2. Next, prepare a sample of the subsurface of the processed area of ​​the material to be processed, and determine whether there are any processing defects in the sample. If there are no processing defects, proceed to step S3 to perform overall actual processing of the material to be processed; if there are processing defects, repeat step S1 to obtain the threshold values ​​of the amplitude and frequency of ultrasonic processing. , The processing defects include stacking faults, dislocations, localized densification, and the formation of amorphous layers. S3. Referring to the threshold values ​​of amplitude and frequency described in step S2, adjust the amplitude and frequency of the ultrasonic device, and simultaneously adjust the temperature and time of the heating stage to process the entire material to be processed by coupling the ultrasonic energy field and the thermal energy field, and repair the processed areas with processing defects.

2. The material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 1, characterized in that, It also includes step S3', which specifically includes the following: Referring to the threshold values ​​of amplitude and frequency described in step S2, adjust the amplitude and frequency of the ultrasonic device. After ultrasonic processing is completed, keep the gas environment of the worktable stable, and then adjust the temperature and time of the heating table to process the material to be processed by thermal energy field and repair the processed areas with processing defects.

3. The material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 1, characterized in that, Step S2 describes obtaining the threshold values ​​for the amplitude and frequency of ultrasonic processing. and Based on the occurrence of processing defects, respectively and Adjustments were made for reference.

4. The material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 1, characterized in that, The materials to be processed include optical materials and semiconductor materials.

5. The material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 1, characterized in that, The amplitude of the ultrasonic device is 0-10 μm.

6. The material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 1, characterized in that, The temperature of the heating platform is 100℃~1000℃.

7. A material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 2, characterized in that, Maintaining a stable gas environment on the workbench includes using a vacuum pump to create a vacuum or introducing an inert gas.

8. A material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 7, characterized in that, The vacuum pump evacuates the vacuum level to 10. -6 Pa~10 -1 Pa.

9. A material processing method for coupling an ultrasonic energy field and a thermal energy field as described in claim 7, characterized in that, The inert gas includes nitrogen or argon.

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