Glass substrate plated with a copper layer having high bonding strength and method for manufacturing the same

Abstract

The application provides a glass substrate plated with a copper layer with high bonding strength and a preparation method thereof. The glass substrate comprises a glass substrate, a gradient transition layer and a copper layer which are sequentially arranged on the glass substrate. The gradient transition layer comprises at least one composite layer which is composed of a Zr layer and a ZrN layer which are sequentially arranged. The Zr layer is located on the side close to the glass substrate, and the ZrN layer is located on the side close to the copper layer. The copper layer has strong bonding force with the glass substrate and is not easy to peel off, thereby improving the comprehensive performance of the glass substrate.

Description

Technical Field

[0001] This invention belongs to the fields of electronic packaging technology and functional thin film preparation technology, specifically relating to a glass substrate coated with a high-bonding-strength copper layer and its preparation method. Background Technology

[0002] Glass substrates (including printed circuit boards) possess excellent electrical insulation and chemical stability, and their coefficient of thermal expansion is similar to that of the components themselves. They hold promise as a replacement for traditional organic substrates as packaging substrate materials, thus showing broad application prospects in PCB, LED, and power device packaging. Before packaging, glass substrates require surface metallization. However, the high flatness, low surface energy, and chemical inertness of glass substrates, especially the inherent difference in thermal expansion coefficients with metals, create significant stress at the interface, leading to poor adhesion, low bonding strength, and easy peeling of the metal layer, ultimately causing glass substrate failure. Furthermore, preparing continuous and complete thin films on glass substrates is extremely difficult. Traditional methods such as electroplating and electroless plating produce metal films with poor bonding strength to the glass substrate, limiting their large-scale production applications. Summary of the Invention

[0003] To address the problems of the prior art, the present invention provides a glass substrate coated with a copper layer with high bonding strength and a method for preparing the same. The copper layer has a strong bond with the glass substrate and is not easily peeled off, thereby improving the overall performance of the glass substrate.

[0004] This invention is achieved through the following technical solution:

[0005] A glass substrate coated with a high-bonding-strength copper layer includes a glass substrate on which a gradient transition layer and a copper layer are sequentially stacked. The gradient transition layer includes at least one composite layer, which is composed of stacked Zr and ZrN layers. The Zr layer is located on the side closer to the glass substrate, and the ZrN layer is located on the side closer to the copper layer.

[0006] Preferably, the number of layers in the composite layer is 1 to 5.

[0007] Preferably, the thickness of the composite layer is 200–500 nm, and the thickness of the gradient transition layer is 0.2–1.5 μm.

[0008] Preferably, the thickness of the copper layer is 1–2 μm.

[0009] The method for preparing the glass substrate coated with a high-bonding-strength copper layer includes:

[0010] S1, Zr layer and ZrN layer are sequentially deposited on glass substrate by magnetron sputtering. This process is repeated until the desired number of composite layers is obtained, forming a gradient transition layer.

[0011] S2, a copper layer is deposited on the gradient transition layer by magnetron sputtering to obtain a glass substrate with a copper layer with high bonding strength.

[0012] Preferably, S1 specifically involves: using a Zr target as the target material, depositing a Zr layer on a glass substrate by magnetron sputtering under Ar gas conditions; then stopping sputtering, introducing Ar gas and N2 gas, and depositing a ZrN layer on the Zr layer by magnetron sputtering again; repeating this process until a composite layer with the required number of layers is obtained, forming a gradient transition layer.

[0013] Furthermore, the process parameters for depositing the Zr layer are: working gas pressure of 0.30–1.00 Pa, DC sputtering power of 50–80 W, and deposition time of 30–60 min; the process parameters for depositing the ZrN layer are: N2 gas flow rate of 2–10 sccm, working gas pressure of 0.30–1.00 Pa, DC sputtering power of 80 W, and deposition time of 60–120 min.

[0014] Furthermore, in S1, when the number of composite layers exceeds one, before depositing the Zr layer in the other composite layers besides the first composite layer, the target baffle is closed first for target sputtering cleaning. After cleaning, the target baffle is opened again for sputtering deposition of the Zr layer.

[0015] Preferably, S2 specifically involves: using a Cu target as the target material, and depositing a copper layer on the gradient transition layer by magnetron sputtering under Ar gas conditions.

[0016] Furthermore, the process parameters for depositing the copper layer are as follows: DC sputtering power of 80–120 W, working gas pressure of 0.5–1 Pa, and sputtering deposition time of 1–2 h.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] The glass substrate of the present invention has a (ZrN / Zr) layer disposed between the glass substrate and the copper layer. x (x is a positive integer) Gradient transition layer, which is composed of alternating Zr and ZrN layers. Both have thermal expansion coefficients between those of the glass substrate and the copper layer. Using only Zr or ZrN layers results in a difference in thermal expansion coefficients, which cannot alleviate interfacial stress. The combined use of Zr and ZrN layers creates a gradient change in thermal expansion coefficients, resolving the mismatch between the thermal expansion coefficients of the glass substrate and the copper layer, further enhancing interfacial compatibility and improving interfacial bonding strength. The glass substrate coated with a high-bonding-strength copper layer has a dense and smooth surface with uniform granular properties, exhibiting excellent electrical performance.

[0019] Furthermore, in the glass substrate of the present invention, the interface structure between the glass substrate and the copper layer can be optimized by adjusting the thickness of the gradient transition layer. As the number of composite layers increases, the bonding strength of the copper layer / glass substrate interface gradually increases. Therefore, the bonding strength of the copper / glass substrate interface can be adjusted by adjusting the number of composite layers, thereby improving the bonding performance of the copper layer / glass substrate interface.

[0020] This invention employs magnetron sputtering technology to deposit Zr, ZrN, and copper layers on a glass substrate. The preparation method is simple, highly controllable, and easy to prepare on a large scale.

[0021] Furthermore, by adjusting the working gas pressure of the zirconium target sputtering, the size of each particle in the Zr layer and ZrN layer can be adjusted, thereby regulating their microstructure. Attached Figure Description

[0022] Figure 1 This refers to (ZrN / Zr) in Embodiments 1-3 of the present invention. x Surface topography images of gradient transition layers; (a) and (b) are the (ZrN / Zr)1 gradient transition layer of Example 1; (c) and (d) are the (ZrN / Zr)2 gradient transition layer of Example 2; (e) and (f) are the (ZrN / Zr)3 gradient transition layer of Example 3.

[0023] Figure 2 This refers to Cu / (ZrN / Zr) in Examples 1-3 of this invention. x / Cross-sectional topography of the glass composite structure. Detailed Implementation

[0024] To further understand the present invention, the present invention will be described below with reference to embodiments. These descriptions are only for further explaining the features and advantages of the present invention and are not intended to limit the claims of the present invention.

[0025] The glass substrate with a high-bonding-strength copper layer according to the present invention includes a glass substrate, on which a gradient transition layer and a copper layer are sequentially stacked; the gradient transition layer includes at least one composite layer, which is composed of a stacked Zr layer and a ZrN layer; the Zr layer is located on the side closer to the glass substrate, and the ZrN layer is located on the side closer to the copper layer.

[0026] In specific embodiments of the present invention, the number of layers in the composite layer is 1 to 5, for example, the composite layer can be 1, 2, or 3 layers. The thickness of the composite layer is 200 to 500 nm, more preferably 400 to 500 nm; the thickness of the gradient transition layer is 0.2 to 1.5 μm, more preferably 0.4 to 1.2 μm; and the thickness of the copper layer is 1 to 2 μm, more preferably 0.9 to 1.1 μm.

[0027] The method for preparing the glass substrate with a high-bonding-strength copper layer according to the present invention includes:

[0028] S1, Zr layer and ZrN layer are sequentially deposited on glass substrate by magnetron sputtering. This process is repeated until the desired number of composite layers is obtained, forming a gradient transition layer.

[0029] S2, a copper layer is deposited on the gradient transition layer by magnetron sputtering to obtain a glass substrate with a copper layer with high bonding strength.

[0030] In a specific embodiment of the present invention, before S1, the glass substrate is pre-treated by cleaning: the glass substrate is placed in acetone and ethanol in sequence for ultrasonic cleaning, and then dried and placed in a vacuum chamber for later use.

[0031] In a specific embodiment of the present invention, S1 specifically involves: using a Zr target as the target material, depositing a Zr layer on a glass substrate by magnetron sputtering under Ar gas conditions; then, stopping the magnetron sputtering, introducing Ar and N2 gas, and depositing a ZrN layer on the Zr layer by magnetron sputtering again; repeating this process until a composite layer with the required number of layers is obtained, forming a gradient transition layer. Here, Ar gas is used as the sputtering gas, and N2 gas is used as the reactive gas for depositing ZrN. The ZrN layer in the gradient transition layer needs to be achieved through reactive sputtering.

[0032] In a specific embodiment of the present invention, the process parameters for depositing the Zr layer are as follows: Ar gas flow rate of 20 sccm, working gas pressure of 0.30–1.00 Pa, DC sputtering power of 50–80 W, and deposition time of 30–60 min. The process parameters for depositing the ZrN layer are as follows: Ar gas flow rate of 20 sccm, N2 gas flow rate of 2–10 sccm, working gas pressure of 0.30–1.00 Pa, DC sputtering power of 80 W, and deposition time of 60–120 min.

[0033] In a specific embodiment of the present invention, when the number of composite layers exceeds one, before depositing the Zr layer in the other composite layers besides the first composite layer, the target baffle is closed and the target is sputtered cleaned so that the ZrN remaining on the target surface during the sputtering deposition of the previous ZrN layer is fully sputtered onto the target baffle. Then the target baffle is opened and a pure Zr layer is sputtered and deposited.

[0034] In a specific embodiment of the present invention, S2 is: using a Cu target as the target material, a copper layer is deposited on the gradient transition layer by magnetron sputtering under Ar gas conditions.

[0035] In a specific embodiment of the present invention, the process parameters for depositing the copper layer are as follows: DC sputtering power of 80-120W, Ar gas flow rate of 20sccm, working gas pressure of 0.5-1Pa, and sputtering deposition time of 1-2h.

[0036] In this invention, all sputtering deposition is performed at room temperature.

[0037] Example 1

[0038] The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to the present invention includes:

[0039] Step 1): The glass substrate (2cm × 2cm) is ultrasonically cleaned in acetone and anhydrous ethanol for 10 minutes in sequence. After removal, it is dried with a hair dryer and horizontally fixed to the sample tray using high-temperature resistant double-sided tape. The Zr target (Φ50mm × 5mm, purity 99.95%) is polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed in the target position in the sputtering chamber.

[0040] Step 2), the background vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Ar gas (99.99% purity) was introduced at a flow rate of 20 sccm and a working pressure of 0.5 Pa. The DC power supply was turned on, and the Zr target sputtering power was adjusted to 80 W to begin sputtering and depositing the Zr layer for 60 min. After the Zr layer sputtering and deposition was completed, the sputtering power supply was turned off, and N2 gas was introduced at a flow rate of 6 sccm to ensure that the Ar and N2 gases in the sputtering chamber were fully mixed. The DC sputtering power was then adjusted to 80 W to begin sputtering again for 60 min, resulting in a (ZrN / Zr)1 / glass composite layer.

[0041] Step 3): Based on step 2), the copper layer is prepared. Specifically, the operation is as follows:

[0042] The Cu target (Φ50mm×5mm, purity 99.95%) was polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed on the target position in the sputtering chamber.

[0043] The process parameters are as follows: the base vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Pa, DC sputtering power of 100 W, Ar gas flow rate of 20 sccm, working pressure of 0.5 Pa, sputtering deposition for 1 h, yielding Cu / (ZrN / Zr)1 / glass (denoted as 1). # ).

[0044] Example 2

[0045] The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to the present invention includes:

[0046] Step 1): The glass substrate (2cm × 2cm) is ultrasonically cleaned in acetone and anhydrous ethanol for 10 minutes in sequence. After removal, it is dried with a hair dryer and horizontally fixed to the sample tray using high-temperature resistant double-sided tape. The Zr target (Φ50mm × 5mm, purity 99.95%) is polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed in the target position in the sputtering chamber.

[0047] Step 2), the background vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Ar gas (99.99% purity) was introduced at a flow rate of 20 sccm and a working pressure of 0.5 Pa. The DC power supply was turned on, and the Zr target sputtering power was adjusted to 80 W to begin sputtering and depositing the Zr layer for 60 min. After the Zr layer sputtering and deposition was completed, the sputtering power supply was turned off, and N2 gas was introduced at a flow rate of 6 sccm to ensure thorough mixing of Ar and N2 gas in the sputtering chamber. The DC sputtering power was then adjusted back to 80 W to begin sputtering again for 60 min. The first layer was deposited. The composite layer deposition is completed; then the N2 gas supply is stopped, the target baffle is closed, and the target is sputtered and cleaned. After cleaning, the target baffle is opened again, and the Zr layer is sputtered and deposited. After the Zr layer sputtering and deposition is completed, the sputtering power is turned off, and N2 gas is introduced. The flow rate of N2 gas is 6 sccm to ensure that the Ar gas and N2 gas in the sputtering chamber are fully mixed. Then the DC sputtering power is adjusted to 80W and sputtering is started. The sputtering deposition time is 60 minutes. The second composite layer deposition is completed, and the (ZrN / Zr)2 / glass with two composite layers is obtained.

[0048] Step 3): Based on step 2), the copper layer is prepared. Specifically, the operation is as follows:

[0049] The Cu target (Φ50mm×5mm, purity 99.95%) was polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed on the target position in the sputtering chamber.

[0050] The process parameters are as follows: the base vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Pa, DC sputtering power of 100W, Ar gas flow rate of 20sccm, working pressure of 0.5Pa, sputtering deposition for 1h yielded Cu / (ZrN / Zr)2 / glass (denoted as 2). # ).

[0051] Example 3

[0052] The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to the present invention includes:

[0053] Step 1): The glass substrate (2cm × 2cm) is ultrasonically cleaned in acetone and anhydrous ethanol for 10 minutes in sequence. After removal, it is dried with a hair dryer and horizontally fixed to the sample tray using high-temperature resistant double-sided tape. The Zr target (Φ50mm × 5mm, purity 99.95%) is polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed in the target position in the sputtering chamber.

[0054] Step 2), the background vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Ar gas (99.99% purity) was introduced at a flow rate of 20 sccm and a working pressure of 0.5 Pa. The DC power supply was turned on, and the Zr target sputtering power was adjusted to 80 W to begin sputtering and depositing the Zr layer for 60 minutes. After the Zr layer sputtering and deposition was completed, the sputtering power supply was turned off, and N2 gas was introduced at a flow rate of 6 sccm to ensure thorough mixing of Ar and N2 gas in the sputtering chamber. The DC sputtering power was then adjusted back to 80 W, and sputtering and deposition were resumed for 60 minutes, completing the deposition of the first composite layer. The N2 gas supply was then stopped, the target baffle was closed, and the target was sputtered and cleaned. After cleaning, the target baffle was reopened, and the Zr layer was sputtered and deposited. After the Zr layer sputtering and deposition was completed, the sputtering power supply was turned off. The source is activated by introducing N2 gas at a flow rate of 6 sccm to ensure thorough mixing of Ar and N2 gas in the sputtering chamber. The DC sputtering power is then adjusted to 80W to begin sputtering, with a deposition time of 60 minutes, completing the deposition of the second composite layer. The N2 gas supply is then stopped, the target baffle is closed, and the target is sputtered and cleaned. After cleaning, the target baffle is reopened, and a Zr layer is sputtered and deposited. After the Zr layer deposition is complete, the sputtering power is turned off, and N2 gas is introduced at a flow rate of 6 sccm to ensure thorough mixing of Ar and N2 gas in the sputtering chamber. The DC sputtering power is then adjusted to 80W to begin sputtering, with a deposition time of 60 minutes, completing the deposition of the third composite layer, resulting in a three-layer composite layer (ZrN / Zr)3 / glass.

[0055] Step 3): Based on step 2), the copper layer is prepared. Specifically, the operation is as follows:

[0056] The Cu target (Φ50mm×5mm, purity 99.95%) was polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed on the target position in the sputtering chamber.

[0057] The process parameters are as follows: the base vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Pa, DC sputtering power of 100 W, Ar gas flow rate of 20 sccm, working pressure of 0.5 Pa, sputtering deposition for 1 h, yielding Cu / (ZrN / Zr)3 / glass (denoted as 3). # ).

[0058] Comparative Example 1

[0059] The method for preparing a copper-plated glass substrate in this comparative example includes:

[0060] Step 1): Place the glass substrate (2cm×2cm) into acetone and anhydrous ethanol in sequence for ultrasonic cleaning for 10 minutes. After removing it, dry it with a hair dryer and fix it horizontally on the sample tray using high-temperature resistant double-sided tape.

[0061] Step 2) Polish the surface of the Cu target (Φ50mm×5mm, purity 99.95%) with 600-grit wet sandpaper, ultrasonically clean it in acetone for 10 minutes, and then install it on the target position in the sputtering chamber.

[0062] The sputtering process parameters are as follows: the background vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Pa was used to sputter a Cu target with a DC sputtering power of 100W, an Ar gas flow rate of 20sccm, and a working pressure of 0.5Pa to deposit a Cu layer for 60 minutes, resulting in Cu / glass.

[0063] Comparative Example 2

[0064] The method for preparing a copper-plated glass substrate in this comparative example includes:

[0065] Step 1): The glass substrate (2cm × 2cm) was ultrasonically cleaned in acetone and anhydrous ethanol for 10 minutes in sequence. After removal, it was dried with a hair dryer and horizontally fixed to the sample tray using high-temperature resistant double-sided tape. The Zr target (Φ50mm × 5mm, purity 99.95%) and Cu target (Φ50mm × 5mm, purity 99.95%) were polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed on the target position in the sputtering chamber.

[0066] Step 2), when the background vacuum of the sputtering chamber is 5.0 × 10⁻⁶ -4 At Pa, Ar gas (purity 99.99%) was introduced, the Ar gas flow rate was set to 20 sccm, the working gas pressure was 0.5 Pa, the DC power supply was turned on, the Zr target sputtering power was adjusted to 80 W to start sputtering and depositing the Zr layer, the sputtering time was 60 min, and Zr / glass was obtained;

[0067] Step 3): Based on step 2), the copper layer is prepared. Specifically, the operation is as follows:

[0068] The sputtering process parameters are as follows: the background vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Pa was used to sputter a Cu target with a DC sputtering power of 100W, an Ar gas flow rate of 20sccm, and a working gas pressure of 0.5Pa to deposit a Cu layer for 60 minutes, resulting in a Cu / Zr / glass.

[0069] Comparative Example 3

[0070] The method for preparing a copper-plated glass substrate in this comparative example includes:

[0071] Step 1): The glass substrate (2cm × 2cm) was ultrasonically cleaned in acetone and anhydrous ethanol for 10 minutes in sequence. After removal, it was dried with a hair dryer and horizontally fixed to the sample tray using high-temperature resistant double-sided tape. The Zr target (Φ50mm × 5mm, purity 99.95%) and Cu target (Φ50mm × 5mm, purity 99.95%) were polished with 600-grit wet sandpaper, ultrasonically cleaned in acetone for 10 minutes, and then installed on the target position in the sputtering chamber.

[0072] Step 2), when the background vacuum of the sputtering chamber is 5.0 × 10⁻⁶ -4 At Pa, Ar gas and N2 gas are introduced, with an Ar gas flow rate of 20 sccm and an N2 gas flow rate of 6 sccm. After the Ar gas and N2 gas are fully mixed in the sputtering chamber, the DC power supply is turned on and the Zr target sputtering power is adjusted to 80W to start the reaction sputtering deposition of ZrN layer. The sputtering time is 60 min to obtain ZrN / glass.

[0073] Step 3): Based on step 2), the copper layer is prepared. Specifically, the operation is as follows:

[0074] The sputtering process parameters are as follows: the background vacuum level of the sputtering chamber is 5.0 × 10⁻⁶. -4 Pa was used to sputter a Cu target with a DC sputtering power of 100W, an Ar gas flow rate of 20sccm, and a working gas pressure of 0.5Pa to deposit a Cu layer for 60 minutes, resulting in a Cu / ZrN / glass.

[0075] Figure 1 These are (ZrN / Zr) composite layers with different numbers of layers in Examples 1-3 of the present invention. x The surface morphology image of the gradient transition layer shows that the surface of the gradient transition layer is uniform, dense, flat and has obvious crystallization characteristics. As the number of composite layers increases, the particle size becomes larger.

[0076] Figure 2 This refers to Cu / (ZrN / Zr) in Examples 1-3 of this invention. x The cross-sectional morphology of the glass shows that during the sputtering deposition process, good interfacial bonding was formed between the composite layers, between the gradient transition layer and adjacent copper layers and the glass substrate. The copper layer surface is smooth and the thickness is uniform. The copper layer exhibits a columnar crystal structure and its thickness is close to 1 μm.

[0077] Table 1 shows the different Cu / (ZrN / Zr) ratios. xThe table shows the resistivity and interfacial bonding strength of the glass composite structure. It can be seen that when a pure Zr layer or a pure ZrN layer is used as the transition layer between the copper layer and the glass substrate, the resistivity is lower, but the interfacial bonding strength is lower than that of the composite structure using a ZrN / Zr composite layer as the transition layer. For a ZrN / Zr gradient transition layer, the resistivity of the composite structure increases slightly, but as the number of composite layers increases, the Cu / (ZrN / Zr) ratio decreases. x / Increase the interfacial bonding strength of the glass.

[0078] Table 1 Cu / (ZrN / Zr) x Electrical properties and interfacial bonding strength of glass composite structures

[0079]

[0080] The glass substrate with a high-bonding-strength copper layer described in this invention features a gradient transition layer with a polycrystalline or amorphous structure, which can alleviate compressive stress at the material interface and improve bonding strength. Glass substrates with different numbers of composite layers all exhibit excellent electrical and interfacial bonding properties. As the number of composite layers increases, the interfacial bonding strength between the copper layer and the glass substrate further improves. In summary, adding a Zr-based gradient transition layer between the glass substrate and the copper layer can improve the interfacial bonding strength between the two.

Claims

1. A glass substrate coated with a high-bonding-strength copper layer, characterized in that, The device includes a glass substrate on which a gradient transition layer and a copper layer are sequentially stacked. The gradient transition layer includes at least one composite layer, which is composed of stacked Zr and ZrN layers. The Zr layer is located on the side closer to the glass substrate, and the ZrN layer is located on the side closer to the copper layer.

2. The glass substrate coated with a high-bonding-strength copper layer according to claim 1, characterized in that, The number of layers in the composite layer is 1 to 5.

3. The glass substrate coated with a high-bonding-strength copper layer according to claim 1, characterized in that, The thickness of the composite layer is 200–500 nm, and the thickness of the gradient transition layer is 0.2–1.5 μm.

4. The glass substrate coated with a high-bonding-strength copper layer according to claim 1, characterized in that, The thickness of the copper layer is 1 to 2 μm.

5. The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to any one of claims 1 to 4, characterized in that, include: S1, Zr layer and ZrN layer are sequentially deposited on glass substrate by magnetron sputtering. This process is repeated until the desired number of composite layers is obtained, forming a gradient transition layer. S2, a copper layer is deposited on the gradient transition layer by magnetron sputtering to obtain a glass substrate with a copper layer with high bonding strength.

6. The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to claim 5, characterized in that, S1 specifically involves: using a Zr target as the target material, depositing a Zr layer on a glass substrate by magnetron sputtering under Ar gas conditions; then stopping sputtering, introducing Ar and N2 gas, and depositing a ZrN layer on the Zr layer by magnetron sputtering again; repeating this process until the desired number of composite layers is obtained, forming a gradient transition layer.

7. The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to claim 6, characterized in that, When depositing a Zr layer, the process parameters are: working gas pressure of 0.30–1.00 Pa, DC sputtering power of 50–80 W, and deposition time of 30–60 min; when depositing a ZrN layer, the process parameters are: N2 gas flow rate of 2–10 sccm, working gas pressure of 0.30–1.00 Pa, DC sputtering power of 80 W, and deposition time of 60–120 min.

8. The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to claim 6, characterized in that, In S1, when the number of composite layers exceeds one, before depositing the Zr layer in the other composite layers besides the first composite layer, the target baffle is closed and the target is sputtered cleaned. After cleaning, the target baffle is opened and the Zr layer is sputtered and deposited.

9. The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to claim 5, characterized in that, S2 specifically involves using a Cu target as the target material and depositing a copper layer on the gradient transition layer by magnetron sputtering under Ar gas conditions.

10. The method for preparing a glass substrate coated with a high-bonding-strength copper layer according to claim 9, characterized in that, When depositing copper layers, the process parameters are: DC sputtering power of 80-120W, working gas pressure of 0.5-1Pa, and sputtering deposition time of 1-2h.

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