An annealing device for thick silica films

Abstract

The present invention discloses a device for annealing a silica thick film, which relates to the technical field of semiconductor silicon wafers and includes: a furnace body; two heat preservation doors, which are symmetrically and slidably connected in the furnace body and divide the space in the furnace body into an annealing chamber and a buffer chamber, and a blocking door is hinged at the feeding port position; a rotating mechanism; a plurality of supporting mechanisms; a moving platform; through the movement of the moving platform, on the one hand, it drives the opening or closing of the two heat preservation doors and the opening and closing of the blocking door. With the cooperation of the two doors, during the process of taking and placing the silicon wafers, the temperature loss of the annealing chamber is reduced as much as possible; at the same time, during the rotation of the turntable, through the meshing of the gears with the first rack and the second rack, the second support ring is passively driven to repeatedly lift and lower, so as to realize the alternating support of the first support ring and the second support ring for the silicon wafers for multiple times, realize the adjustment of the supported position of the silicon wafers, reduce the annealing dead angle, and make the annealing of the silicon wafers more uniform.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor silicon wafers, and specifically to an annealing device for thick silicon dioxide films. Background Art

[0002] A thick silicon dioxide film is an electrolyte film with an amorphous glassy structure, having a short-range ordered network structure; its band gap is 8.1 eV, density is 2.2 g / cm3, dielectric constant is 3.9, refractive index is 1.45 - 1.47, resistivity is 1013 - 1015 Ω·m, and melting point is 1700 °C; it is prepared by thermal oxidation, anodic oxidation, or chemical vapor deposition on a silicon wafer, and is an excellent surface protection film and surface passivation film for semiconductor silicon devices.

[0003] For example, the publication number is: CN202211440782.1, the publication date is: March 14, 2023, and the name is: "An Annealing Furnace for Preparing Thin Films on Silicon Wafers", which includes an equipment box. The bottom end of the equipment box is fixedly connected to a base, the bottom end of the base is fixedly connected to support feet, a control panel is fixedly installed on the surface of the equipment box, an emergency switch is fixedly installed on the surface of the equipment box, a processing table is fixedly installed on the top end of the equipment box, a lower box body is fixedly installed on the processing table, a hinge is hinged to the rear side of the lower box body, and the other side of the hinge is hinged to an upper box body, and a handle is fixedly connected to the upper box body.

[0004] In the prior art such as the above, when annealing a silicon wafer, the silicon wafer needs to be placed into an annealing furnace, and the internal structure of the annealing furnace or a special support mechanism is used to support the silicon wafer, so that the silicon wafer is continuously heated in the annealing furnace for a certain period of time; the deficiencies of the prior art are as follows: 1. After the first batch of silicon wafers is annealed, when opening the furnace door to take out the silicon wafers and putting another batch of silicon wafers into the annealing furnace, due to the opening of the furnace door, the temperature of the annealing furnace will be lost. When re-performing the silicon wafer annealing operation, the annealing furnace needs to be heated first to make up for the lost heat. In this way, energy cannot be effectively utilized; 2. During the annealing process of the silicon wafer in the annealing furnace, the bottom of the silicon wafer is always supported, and the adjustment of the support points cannot be performed, resulting in uneven annealing at the position where the bottom of the silicon wafer is supported. Summary of the Invention

[0005] The purpose of the present invention is to provide an annealing device for thick silicon dioxide films to solve the above deficiencies in the prior art.

[0006] To achieve the above purpose, the present invention provides the following technical solution: An annealing device for thick silicon dioxide films, comprising: a furnace body; two heat-insulating doors, which are symmetrically and slidably connected in the furnace body and divide the space in the furnace body into an annealing chamber and a buffer chamber. A feeding port is opened on the furnace body, and a blocking door is hinged at the position of the feeding port;

[0007] A rotating mechanism, which includes a rotating shaft rotatably connected in an annealing chamber. A turntable is coaxially and fixedly connected to the rotating shaft. A plurality of placement grooves are circumferentially and arrayedly formed on the turntable.

[0008] A plurality of support mechanisms, each support mechanism is respectively and correspondingly arranged in each placement groove. Each support mechanism includes a first support ring rotatably connected in the placement groove. A wave groove is formed on the inner circumferential surface of the first support ring. A fixed seat is fixedly connected in the placement groove. A second support ring is vertically slidably connected to the fixed seat. A first abutting rod is fixedly connected to the second support ring. The abutting rod is slidably abutted and matched with the wave groove. A worm gear is coaxially and fixedly connected to the first support ring. A worm is rotatably connected in the placement groove and meshes with the worm gear. A gear is coaxially and fixedly connected to the worm. A first rack and a second rack are fixedly connected in the annealing chamber. The gear is respectively meshed and matched with the first rack and the second rack.

[0009] A moving platform, which is arranged in the furnace body and linearly slides along the length direction of the furnace body. The stroke of the moving platform sliding along the first direction drives the two heat preservation doors to slide open away from each other. The stroke of the moving platform sliding along the second direction drives the two heat preservation doors to slide close to each other.

[0010] Furthermore, a translation groove is formed in the furnace body. The moving platform is slidably connected in the translation groove. A screw rod is rotatably connected in the furnace body. The screw rod is screwed with the moving platform.

[0011] Furthermore, second abutting rods are fixedly connected to the bottoms of the two heat preservation doors. Guide frames are fixedly connected to both sides of the moving platform. Notches are formed on both guide frames. The two second abutting rods are respectively and slidably abutted and matched with the two guide frames.

[0012] Furthermore, it further includes a rising mechanism, which includes a sliding rod. A sliding groove is formed on the inner wall of the furnace body. The sliding rod is slidably connected in the sliding groove. A spring is arranged between the sliding rod and the sliding groove. An abutting plate is fixedly connected to the sliding rod. An abutting groove is formed on the abutting plate. A vertical plate is fixedly connected to the moving platform. A feeding plate is vertically slidably connected to the vertical plate. A silicon wafer is abutted and matched on the feeding plate. A third abutting rod is fixedly connected to the feeding plate. The third abutting rod is abutted and matched with the abutting groove.

[0013] Furthermore, it further includes a one-way transmission mechanism, which includes a ratchet wheel rotatably connected to the rotating shaft. A plurality of teeth are fixedly connected to the circumferential surface of the ratchet wheel in a circumferential array. A pawl is elastically rotatably connected to the rotating shaft. The pawl is engaged and matched with the ratchet wheel. A third rack is fixedly connected to the vertical plate. The third rack is engaged and matched with each tooth.

[0014] Furthermore, both the second rack and the first rack are arc-shaped, and the axes of the second rack and the first rack coincide with the axis of the rotating shaft.

[0015] Furthermore, the arc length of the second rack is twice that of the first rack.

[0016] Furthermore, a plurality of first through grooves are circumferentially arrayed on the first support ring, and a plurality of second through grooves are circumferentially arrayed on the second support ring, and the first through grooves and the second through grooves are arranged in an interleaved manner.

[0017] Furthermore, the sliding groove is composed of a first section horizontally opened and a second section obliquely upward opened connected to each other.

[0018] Furthermore, the feeding plate is semi-circular.

[0019] In the above technical solution, a device for annealing a thick silicon dioxide film provided by the present invention:

[0020] 1. Through the movement of the moving platform, on the one hand, it drives the opening or closing of the two heat preservation doors and the opening and closing of the sealing door. With the cooperation of the two doors, during the process of taking and placing the silicon wafer, the temperature loss of the annealing chamber is reduced as much as possible; at the same time, during the rotation of the turntable, through the meshing cooperation of the gear with the first rack and the second rack, the second support ring is passively driven to repeatedly lift and lower, so as to realize the alternating support of the silicon wafer by the first support ring and the second support ring for multiple times, realize the adjustment of the supported position of the silicon wafer, reduce the annealing dead angle, and make the annealing of the silicon wafer more uniform.

[0021] 2. By setting the rising mechanism, when the moving platform moves, through the abutting cooperation of the third abutting rod and the abutting groove, the sliding rod is driven to slide in the sliding groove, so that the horizontal height of the sliding rod increases, further driving the feeding plate to move vertically upward on the vertical plate, so that the feeding plate has an upward movement stroke. Through the cooperation of this upward movement stroke with the one-way transmission mechanism, through this upward movement stroke, the feeding and material taking actions can be completed simultaneously.

[0022] 3. Since the arc length of the second rack is twice that of the first rack, when the gear meshes with the first rack, a stroke is generated, that is: the second support ring rises. Then when the gear meshes with the second rack, two strokes will be generated, that is: the second support ring first descends and then rises. In this way, when the turntable rotates again and the gear meshes with the first rack again, the second support ring will change from the rising state to the descending state, so as to cooperate with the feeding plate with an upward movement stroke to transfer the silicon wafer, and the feeding plate takes the silicon wafer on the second support ring to complete the material taking action. Description of the Drawings

[0023] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings.

[0024] Figure 1 Schematic diagram of the overall structure provided by the embodiment of the present invention;

[0025] Figure 2 Schematic diagram of the internal structure provided by the embodiment of the present invention;

[0026] Figure 3 Schematic diagram of the internal structure provided by the embodiment of the present invention;

[0027] Figure 4 Schematic diagram of the internal structure from another angle provided by the embodiment of the present invention;

[0028] Figure 5 Schematic diagram of the partial enlargement provided by the embodiment of the present invention;

[0029] Figure 6 Schematic diagram of the mobile platform and screw structure provided by the embodiment of the present invention;

[0030] Figure 7 Schematic diagram of the rotating mechanism, supporting mechanism, and one-way transmission mechanism provided by the embodiment of the present invention;

[0031] Figure 8 Schematic diagram of the supporting mechanism provided by the embodiment of the present invention;

[0032] Figure 9 Schematic diagram of the first support ring and the second support ring provided by the embodiment of the present invention.

[0033] Explanation of reference numerals:

[0034] 1. Furnace body; 11. Annealing chamber; 12. Buffer chamber; 13. Feeding port; 14. Sealing door; 15. Translation groove; 16. Slide groove; 161. First section; 162. Second section; 2. Heat preservation door; 21. Second abutting rod; 3. Rotating mechanism; 31. Rotating shaft; 32. Turntable; 33. Placing groove; 4. Supporting mechanism; 41. First supporting ring; 411. First through groove; 412. Wavy groove; 42. Second supporting ring; 421. Second through groove; 422. First abutting rod; 43. Fixed seat; 44. Worm gear; 45. Worm; 46. Gear; 47. First rack; 48. Second rack; 5. Moving platform; 51. Guide frame; 511. Notch; 52. Vertical plate; 53. Feeding plate; 54. Third abutting rod; 55. Third rack; 6. Screw; 7. One-way transmission mechanism; 71. Ratchet; 72. Pawl; 73. Teeth; 8. Ascending mechanism; 81. Sliding rod; 82. Abutting plate; 83. Abutting groove; 84. Spring. Detailed implementation mode

[0035] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further introduced in detail below in conjunction with the accompanying drawings.

[0036] Please refer to Figures 1-9 , a silica thick film annealing device provided by an embodiment of the present invention includes: a furnace body 1; two heat preservation doors 2, which are symmetrically and slidably connected in the furnace body 1 and divide the space in the furnace body 1 into an annealing chamber 11 and a buffer chamber 12. A feeding port 13 is opened on the furnace body 1, and a sealing door 14 is hinged at the position of the feeding port 13.

[0037] A rotating mechanism 3, which includes a rotating shaft 31 rotatably connected in the annealing chamber 11, and a turntable 32 is coaxially and fixedly connected to the rotating shaft 31. A plurality of placing grooves 33 are arranged in a circumferential array on the turntable 32.

[0038] In an embodiment of the present invention: there are multiple support mechanisms 4, and the support mechanisms 4 can alternately support the silicon wafers, thereby changing the support positions of the silicon wafers and making the annealing of the silicon wafers more uniform; among them, the power source of the support mechanism 4 is the rotation of the turntable 32, and through the rotation of the turntable 32, the alternate support of the silicon wafers is realized passively; each support mechanism 4 is respectively arranged in each placement groove 33 in a one-to-one correspondence, and each support mechanism 4 includes a first support ring 41 rotatably connected in the placement groove 33, and a wave groove 412 is formed on the inner circumferential surface of the first support ring 41; specifically, the wave groove 412 is composed of multiple sections of obliquely upward and obliquely downward grooves that are alternately connected; there is a certain angle between the obliquely upward and obliquely downward grooves; a fixed seat 43 is fixedly connected in the placement groove 33, a second support ring 42 is vertically slidably connected to the fixed seat 43, a first abutting rod 422 is fixedly connected to the second support ring 42, the first abutting rod 422 is slidably abutted and matched with the wave groove 412, a worm gear 44 is coaxially fixedly connected to the first support ring 41, a worm 45 meshing with the worm gear 44 is rotatably connected in the placement groove 33, a gear 46 is coaxially fixedly connected to the worm 45, a first rack 47 and a second rack 48 are fixedly connected in the annealing chamber 11, and the gear 46 is meshed and matched with the first rack 47 and the second rack 48 respectively.

[0039] As a preferred embodiment of the present invention: a plurality of first through grooves 411 are formed on the first support ring 41 in a circumferential array, a plurality of second through grooves 421 are formed on the second support ring 42 in a circumferential array, and the first through grooves 411 and the second through grooves 421 are alternately arranged; by forming the first through grooves 411 and the second through grooves 421, when the first support ring 41 and the second support ring 42 support the silicon wafers, the bottom of the silicon wafers can be communicated with the hot air in the annealing furnace, making the heating more uniform; by alternately arranging the first through grooves 411 and the second through grooves 421, the support positions of the first support ring 41 and the second support ring 42 on the silicon wafers can be staggered, further optimizing the support effect.

[0040] It is worth mentioning that: through the meshing of the gear 46 with the first rack 47, this meshing stroke drives: the gear 46 drives the worm gear 44, the worm gear 44, and the first support ring 41 to rotate, and through the sliding abutting cooperation between the wave groove 412 and the first abutting rod 422, and the second support ring 42 is vertically slidably connected to the fixed seat 43, the second support ring 42 is vertically lifted, thereby supporting the silicon wafers conveyed by the feeding plate 53.

[0041] Among them, in the initial state, the first abutting rod 422 is located at the intersection of the obliquely downward and obliquely upward sections of the groove, and this intersection is located at a position below the first support ring 41. At this time, the opening of the angle formed between the obliquely downward and obliquely upward is upward, that is: the first abutting rod 422 is located at the lowest position at this time.

[0042] Furthermore, in the above initial state, when the first abutting rod 422 is located at the lowest position, the top surface of the second support ring 42 is lower than the top surface of the first support ring 41 , that is, the first support ring 41 supports the silicon wafer.

[0043] Specifically, the second rack 48 and the first rack 47 are both arc-shaped, and the axes of the second rack 48 and the first rack 47 coincide with the axis of the rotating shaft 31; the arc length of the second rack 48 is twice the arc length of the first rack 47; the purpose of the setting is to drive the second support ring 42 to rise through the engagement of the first rack 47 with the gear 46, so that the second support ring 42 completes a stroke, and the arc length of the second rack 48 is twice the arc length of the first rack 47. When the second rack 48 is engaged with the gear 46, it will drive the second support ring 42 to complete two more strokes, namely: from a raised state to a lowered state, and then from a lowered state to a raised state. Through the repeated lifting of the second support ring 42, the support position of the bottom of the silicon wafer can be repeatedly changed, so that the silicon wafer is heated more evenly.

[0044] The movable platform 5 is arranged in the furnace body 1 and slides linearly along the length direction of the furnace body 1. The sliding stroke of the movable platform 5 along the first direction drives the two thermal insulation doors 2 to slide away from each other and open; the sliding stroke of the movable platform 5 along the second direction drives the two thermal insulation doors 2 to slide towards each other and close.

[0045] Specifically, the bottom of the two thermal insulation doors 2 are fixedly connected with the second abutment rod 21, and the two sides of the mobile platform 5 are fixedly connected with the guide frames 51, and the two guide frames 51 are provided with notches 511; the purpose of the notches 511 is: when the two thermal insulation doors 2 are close to and abut against each other and are in a closed state, the guide frame 51 can be separated from the second abutment rod 21, so that the mobile platform 5 can continue to move; the two second abutment rods 21 respectively correspond to the two guide frames 51 in a sliding abutment cooperation.

[0046] In the embodiment of the present invention, the specific sliding mode of the mobile platform 5 is as follows: a translation groove 15 is opened in the furnace body 1, the mobile platform 5 is slidably connected in the translation groove 15, and a screw rod 6 is rotatably connected in the furnace body 1, and the screw rod 6 is screwed to the mobile platform 5.

[0047] In the embodiment of the present invention, the power for driving the screw rod 6 to rotate is a motor.

[0048] In another embodiment of the present invention: a cylinder is fixedly connected inside the furnace body 1 , and an output end of the cylinder is fixedly connected to the moving platform 5 .

[0049] In an embodiment of the present invention: It further includes a rising mechanism 8, which is used to drive the feeding plate 53 to rise during the sliding stroke of the moving platform 5, so that the feeding plate 53 can place the silicon wafers thereon on the supporting mechanism 4; it includes a sliding rod 81, a sliding groove 16 is opened on the inner wall of the furnace body 1, the sliding rod 81 is slidably connected in the sliding groove 16, and a spring 84 is arranged between the sliding rod 81 and the sliding groove 16; wherein, the sliding groove 16 is composed of a first section 161 opened horizontally and a second section 162 opened obliquely upward; specifically, the spring 84 is a compression spring; more specifically, during the process of elastic deformation of the spring 84, it drives the sliding rod 81 to slide from the first section 161 of the sliding groove 16 to the second section 162, that is: the height of the sliding rod 81 in the vertical position rises; a contact plate 82 is fixedly connected to the sliding rod 81, a contact groove 83 is opened on the contact plate 82, a vertical plate 52 is fixedly connected to the moving platform 5, and a feeding plate 53 is vertically slidably connected to the vertical plate 52, wherein, the feeding plate 53 is semicircular; silicon wafers are attached and fitted on the feeding plate 53, a third contact rod 54 is fixedly connected indirectly to the feeding plate 53, and the third contact rod 54 is in contact and cooperation with the contact groove 83; through the contact between the third contact rod 54 and the contact groove 83, the feeding plate 53 can be supported, and when the third contact rod 54 starts to rise, it will also drive the feeding plate 53 to rise vertically on the vertical plate 52, thereby driving the feeding plate 53 to rise.

[0050] In an embodiment of the present invention: It further includes a one-way transmission mechanism 7, which receives the power of the movement of the moving platform 5 and transmits this power unidirectionally to the rotating shaft 31, so that the turntable 32 rotates; it includes a ratchet wheel 71 rotatably connected to the rotating shaft 31, a plurality of teeth 73 are fixedly connected to the circumferential surface of the ratchet wheel 71 in a circumferential array, and a pawl 72 is elastically rotatably connected to the rotating shaft 31; wherein, the elastic rotational connection means that: an elastic member is arranged between the pawl 72 and the rotating shaft 31, and the elastic member is a torsion spring; the pawl 72 is in snap-fit with the ratchet wheel 71, and a third rack 55 is fixedly connected to the vertical plate 52, and the third rack 55 is in meshing cooperation with each tooth 73.

[0051] In an embodiment of the present invention: The heating structure in the annealing chamber 11 is the same as that of the existing annealing device, both are to increase the temperature in the furnace, such as heating wires, etc., which will not be elaborated here.

[0052] Working principle: When in use, the process of placing the silicon wafers is as follows: Open the sealing door 14, place the silicon wafers at the feeding port 13 position on the feeding plate 53, and after placing them, close the sealing door 14. At this time, the heat preservation door 2 is in the closed state, and the heat energy in the annealing chamber 11 will not be lost; subsequently, start the motor, the output end of the motor drives the screw rod 6 to rotate, and through the rotation of the screw rod 6, the moving platform 5 moves from the buffer chamber 12 towards the annealing chamber 11.

[0053] During the movement of the mobile platform 5, firstly, through the sliding contact and cooperation between the guiding frame 51 and the second abutting rod 21, the two heat preservation doors 2 are driven to move away from each other, so that the two heat preservation doors 2 are opened, enabling the mobile platform 5 to smoothly pass through between the two heat preservation doors 2.

[0054] Secondly, as the mobile platform 5 moves, the mobile platform 5 will drive the third rack 55 to move synchronously. After the mobile platform 5 passes over the heat preservation door 2, the third rack 55 meshes with the teeth 73 on the ratchet wheel 71. Thus, through the engagement and cooperation between the pawl 72 and the ratchet wheel 71, the rotating shaft 31 and the turntable 32 are driven to rotate counterclockwise. During the rotation of the turntable 32, the gear 46 is driven to mesh with the first rack 47, causing the gear 46 to drive the worm wheel 44, the worm wheel 44, and the first support ring 41 to rotate. Through the sliding contact and cooperation between the wave groove 412 and the first abutting rod 422, and the second support ring 42 being vertically slidably connected to the fixed seat 43, the second support ring 42 rises vertically.

[0055] Meanwhile, during the movement of the mobile platform 5, the third abutting rod 54 abuts against the abutting groove 83; through the abutment between the third abutting rod 54 and the abutting groove 83, when the mobile platform 5 continues to move, the sliding rod 81 slides from the first section 161 of the sliding groove 16 to the second section 162, causing the horizontal height of the sliding rod 81 to rise, thereby driving the feeding plate 53 to rise vertically on the vertical plate 52, and driving the silicon wafer on the feeding plate 53 to rise together.

[0056] As described above, on the one hand, the feeding plate 53 drives the silicon wafer to rise, and on the other hand, the second support ring 42 rises vertically. At this time, the second support ring 42 supports the silicon wafer.

[0057] Subsequently, the motor drives the screw rod 6 to reverse, and the mobile platform 5 slides in the opposite direction from the annealing chamber 11 towards the buffer chamber 12. At this time, the third rack 55 only drives the ratchet wheel 71 to rotate, and the ratchet wheel 71 cannot drive the rotating shaft 31 to rotate through the cooperation with the pawl 72, that is, the turntable 32 remains stationary.

[0058] During the reverse sliding of the mobile platform 5, by the same principle as described above, through the reverse sliding of the mobile platform 5, on the one hand: the sliding rod 81 slides from the second section 162 of the sliding groove 16 to the first section 161, that is, the sliding rod 81 resets, thereby causing the feeding plate 53 to vertically descend on the vertical plate 52, and the descending feeding plate 53 makes way for the silicon wafer supported by the second support ring 42; on the other hand, it drives the two heat preservation doors 2 to approach and abut against each other, making the heat preservation doors 2 in a closed state. At this time, one feeding of the silicon wafer is completed.

[0059] Subsequently, the second feeding is carried out. The blocking door 14 is opened again, and the silicon wafers are fed according to the above principle. It is worth mentioning that each time the feeding is carried out, the angle of rotation of the turntable 32 is the included angle formed between two adjacent placement grooves 33.

[0060] Among them, after two feedings, during the rotation of the turntable 32, it will drive the gear 46 to mesh with the second rack 48. Since the arc length of the second rack 48 is twice that of the first rack 47, during the meshing stroke of the gear 46 and the second rack 48, it will drive the second support ring 42 to change from the raised state to the lowered state, and then from the lowered state to the raised state. Through the repeated raising of the second support ring 42, the support position at the bottom of the silicon wafer can be repeatedly changed, so that the silicon wafer is heated more evenly. Among them, when the second support ring 42 is in the lowered state, as the second support ring 42 descends, at this time, the first support ring 41 supports the silicon wafer.

[0061] When the annealing is completed and the silicon wafer needs to be taken out, as described above, when the gear 46 disengages from the second rack 48, at this time, the second support ring 42 is in the raised state. As the turntable 32 rotates again, the gear 46 will mesh with the first rack 47 again. At this time, when meshing with the first rack 47, it will drive the second support ring 42 to change from the raised state to the lowered state. At the same time, during the movement of the moving platform 5, the feeding plate 53 will still generate a vertically upward movement. As the second support ring 42 drives the silicon wafer to move downward synchronously, the feeding plate 53 picks up the silicon wafer. Subsequently, the moving platform 5 moves in the reverse direction to complete the material taking.

[0062] Only some exemplary embodiments of the present invention have been described by way of illustration above. Undoubtedly, for those of ordinary skill in the art, without departing from the spirit and scope of the present invention, the described embodiments can be modified in various different ways. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A silica thick film annealing device, characterized in that, Including: A furnace body (1); Two heat-insulating doors (2), which are symmetrically and slidably connected inside the furnace body (1) and divide the space inside the furnace body (1) into an annealing chamber (11) and a buffer chamber (12). A feeding port (13) is opened on the furnace body (1), and a sealing door (14) is hinged at the position of the feeding port (13); A rotating mechanism (3), which includes a rotating shaft (31) rotatably connected inside the annealing chamber (11). A turntable (32) is coaxially and fixedly connected to the rotating shaft (31). A plurality of placing grooves (33) are circumferentially arranged on the turntable (32); A plurality of supporting mechanisms (4), each supporting mechanism (4) is respectively arranged in each placing groove (33). Each supporting mechanism (4) includes a first supporting ring (41) rotatably connected in the placing groove (33). A wave groove (412) is formed on the inner circumferential surface of the first supporting ring (41). A fixing seat (43) is fixedly connected in the placing groove (33). A second supporting ring (42) is vertically slidably connected to the fixing seat (43). A first abutting rod (422) is fixedly connected to the second supporting ring (42). The abutting rod (422) is slidably abutted and matched with the wave groove (412). A worm gear (44) is coaxially and fixedly connected to the first supporting ring (41). A worm (45) meshing with the worm gear (44) is rotatably connected in the placing groove (33). A gear (46) is coaxially and fixedly connected to the worm (45). A first rack (47) and a second rack (48) are fixedly connected inside the annealing chamber (11). The gear (46) is meshed and matched with the first rack (47) and the second rack (48) respectively; Both the second rack (48) and the first rack (47) are arc-shaped, and the axes of the second rack (48) and the first rack (47) coincide with the axis of the rotating shaft (31); The arc length of the second rack (48) is twice the arc length of the first rack (47); A moving platform (5), which is arranged inside the furnace body (1) and linearly slides along the length direction of the furnace body (1). The stroke of the moving platform (5) sliding along the first direction drives the two heat-insulating doors (2) to slide open away from each other; the stroke of the moving platform (5) sliding along the second direction drives the two heat-insulating doors (2) to slide close to each other.

2. The annealing device for silica thick film according to claim 1, wherein A translation groove (15) is opened inside the furnace body (1). The moving platform (5) is slidably connected in the translation groove (15). A screw rod (6) is rotatably connected inside the furnace body (1). The screw rod (6) is screwed to the moving platform (5).

3. A silica thick film annealing device according to claim 1, characterized in that, Second abutting rods (21) are fixedly connected to the bottoms of the two heat-insulating doors (2). Guide frames (51) are fixedly connected to both sides of the moving platform (5). Notches (511) are formed on both guide frames (51). The two second abutting rods (21) are respectively slidably abutted and matched with the two guide frames (51).

4. A silica thick film annealing device according to claim 1, wherein, It further includes a rising mechanism (8), which includes a sliding rod (81). A sliding groove (16) is formed on the inner wall of the furnace body (1). The sliding rod (81) is slidably connected in the sliding groove (16). A spring (84) is arranged between the sliding rod (81) and the sliding groove (16). A contact plate (82) is fixedly connected to the sliding rod (81). A contact groove (83) is formed on the contact plate (82). A vertical plate (52) is fixedly connected to the moving platform (5). A feeding plate (53) is vertically slidably connected to the vertical plate (52). A silicon wafer is abutted and fitted on the feeding plate (53). A third contact rod (54) is indirectly fixedly connected to the feeding plate (53). The third contact rod (54) is in contact and cooperation with the contact groove (83).

5. A silica thick film annealing apparatus according to claim 4, characterized in that, It further includes a one-way transmission mechanism (7), which includes a ratchet wheel (71) rotatably connected to the rotating shaft (31). A plurality of teeth (73) are fixedly connected to the circumferential surface of the ratchet wheel (71) in a circular array. A ratchet pawl (72) is elastically rotatably connected to the rotating shaft (31). The ratchet pawl (72) is in clamping cooperation with the ratchet wheel (71). A third rack (55) is fixedly connected to the vertical plate (52). The third rack (55) is in meshing cooperation with each tooth (73).

6. The annealing device for silica thick film according to claim 1, wherein, A plurality of first through grooves (411) are formed on the first support ring (41) in a circular array. A plurality of second through grooves (421) are formed on the second support ring (42) in a circular array. The first through grooves (411) and the second through grooves (421) are arranged in an alternating manner.

7. A silica thick film annealing apparatus according to claim 4, characterized in that, The sliding groove (16) is composed of a first section (161) horizontally opened and a second section (162) obliquely upwardly opened and communicated with each other.

8. A silica thick film annealing device according to claim 4, characterized in that, The feeding plate (53) is semi-circular.

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