High-frequency resonant pulsed bipolar dielectric barrier discharge power supply

Abstract

The application discloses a high-frequency resonant pulse type bipolar dielectric barrier discharge power supply, which is composed of two symmetrical multi-resonance circuits. The front stage of the multi-resonance circuit utilizes a first resonant circuit composed of a diode, a resonant inductor and a resonant capacitor to realize the charging of the resonant capacitor. The rear stage of the multi-resonance circuit utilizes a second resonant circuit composed of a resonant capacitor, a transformer leakage reactance and a load to generate high-frequency pulse excitation on the dielectric barrier load. By controlling the switching frequency of the symmetrical multi-resonance circuit, bipolar pulse excitation of different frequencies can be generated on the dielectric barrier load. The secondary side of the transformer can be connected to various different forms of loads, such as excimer lamps, ozone generators and the like.

Description

Technical Field

[0001] The present invention relates to the field of special power supplies for power electronics, in particular to the design of a power supply for a dielectric barrier discharge load, and specifically to a high-frequency resonant pulse bipolar dielectric barrier discharge power supply. Background Art

[0002] Dielectric barrier discharge (DBD) is a form of gas discharge, commonly used to generate low-temperature plasma containing a large number of active particles under atmospheric pressure. Therefore, it is widely used in material modification, energy conversion, environmental governance, biomedicine, aerospace and other fields.

[0003] With the continuous expansion of the application areas of dielectric barrier discharge (DBD) technology and the continuous development of pulse power technology, high-voltage pulse power supplies, as important excitation sources for dielectric barrier discharge (DBD) loads, have emerged. Parameters such as the amplitude, rise rate, frequency, shape, and polarity of their excitation pulses affect the power consumption, efficiency, uniformity, and stability of the DBD. Experiments have shown that high-rise-rate excitation pulses can increase the charge and energy transferred in each discharge cycle, thereby improving the discharge efficiency of DBD loads and enhancing the gas discharge intensity. Current power supplies, such as those based on multi-level circuits and Marx circuits, suffer from complex circuit structures, high drive pulse synchronization requirements, complex control, low overall power supply efficiency, and difficulty in achieving high frequencies.

[0004] Therefore, how to provide a high-frequency resonant pulse bipolar dielectric barrier discharge power supply that solves the above technical problems is a problem that those skilled in the art currently need to solve. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a high-frequency resonant pulse power supply for a dielectric barrier discharge load, so as to give full play to the performance of the dielectric barrier discharge load.

[0006] In view of this, the present application provides a high-frequency resonant pulsed bipolar dielectric barrier discharge power supply, characterized in that it includes: a DC power supply, a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a first resonant inductor (L1), a second resonant inductor (L2), a first absorption resistor (R1), a second absorption resistor (R2), a first power switch tube (S1), a second power switch tube (S2), a first resonant capacitor (C1), a second resonant capacitor (C2), and a step-up transformer with a center tap;

[0007] The anode of the DC power supply is connected to the cathode of the first diode (D1) and the cathode of the fourth diode (D4) respectively;

[0008] The anode of the first diode (D1) is connected to the first end of the first resonant inductor (L1);

[0009] The second end of the first resonant inductor (L1) is respectively connected to the first end of the first resonant capacitor (C1) and the cathode of the second diode (D2);

[0010] The anode of the second diode (D2) is connected to the cathode of the third diode (D3) and the first end of the first primary winding of the transformer respectively;

[0011] The cathode of the third diode (D3) is connected to the first end of the first absorption resistor (R1);

[0012] The second end of the first absorption resistor (R1) is respectively connected to the first end of the first power switch tube (S1) and the second end of the first primary winding of the transformer;

[0013] The anode of the fourth diode (D4) is connected to the first end of the second resonant inductor (L2);

[0014] The second end of the second resonant inductor (L2) is connected to the first end of the second resonant capacitor (C2) and the cathode of the fifth diode (D5) respectively;

[0015] The anode of the fifth diode (D5) is connected to the cathode of the sixth diode (D6) and the first end of the second primary winding of the transformer respectively;

[0016] The cathode of the sixth diode (D6) is connected to the first end of the second absorption resistor (R2);

[0017] The second end of the second absorption resistor (R2) is respectively connected to the first end of the second power switch tube (S2) and the second end of the second primary winding of the transformer;

[0018] The cathode of the DC power supply is respectively connected to the second end of the first resonant capacitor (C1), the second end of the second resonant capacitor (C2), the second end of the first power switch tube (S1), and the second end of the second power switch tube (S2);

[0019] The first end and the second end of the secondary winding of the transformer are respectively connected to the two ends of the dielectric barrier load.

[0020] Preferably, the capacitance value of the first resonant capacitor (C1) is equal to the capacitance value of the second resonant capacitor (C2).

[0021] Preferably, the inductance value of the first resonant inductor (L1) is equal to the inductance value of the second resonant inductor (L2).

[0022] Preferably, the resistance value of the first absorption resistor (R1) is equal to the resistance value of the second absorption resistor (R2).

[0023] Preferably, the operating frequency and duty cycle of the first power switch tube (S1) and the second power switch tube (S2) are equal, and the duty cycle is not higher than 0.5.

[0024] Preferably, the first diode (D1), the second diode (D2), the third diode (D3), the fourth diode (D4), the fifth diode (D5), and the sixth diode (D6) are all fast recovery diodes.

[0025] Preferably, the first power switch tube (S1) and the second power switch tube (S2) are both NMOS, wherein the first ends of the first power switch tube (S1) and the second power switch tube (S2) are both drains of the NMOS; and the second ends of the first power switch tube (S1) and the second power switch tube (S2) are both sources of the NMOS.

[0026] Preferably, the operating frequencies of the first power switch tube (S1) and the second power switch tube (S2) can be changed to adjust the output frequency of the power supply.

[0027] Preferably, the secondary side of the transformer can be connected to various types of loads, such as an excimer lamp and an ozone generator lamp.

[0028] Performance advantages:

[0029] The advantages of the present invention compared with the prior art are:

[0030] (1) The power supply disclosed in the present invention has a compact structure and a simple drive control scheme, which greatly reduces the control difficulty and cost of the power supply.

[0031] (2) The power supply disclosed in the present invention can provide a high-frequency bipolar pulse excitation voltage with a high rise rate for a dielectric barrier load, and the rise rate of the excitation voltage can be changed by adjusting the value of the resonant capacitor, which has a wider applicability; BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is a schematic diagram of a high-frequency dielectric barrier discharge load power supply structure based on a full-bridge inverter circuit in the prior art;

[0033] Figure 2 This is a schematic diagram of a power supply structure for a dielectric barrier discharge load based on a Marx circuit structure in the prior art;

[0034] Figure 3 A schematic diagram of the structure of the high-frequency resonant pulsed bipolar dielectric barrier discharge power supply provided by the invention;

[0035] Figure 4 This is a working waveform diagram of the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention;

[0036] Figure 5 A schematic diagram of the working process of the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention, wherein the first diode (D1) is turned on, the second diode (D2), the first power switch tube (S1) are turned off, and the second power switch tube (S2) are turned off;

[0037] Figure 6 A schematic diagram of the working process of the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention, wherein the first power switch tube (S1) is turned on, and the first diode (D1), the second diode (D2) and the second power switch tube (S2) are turned off;

[0038] Figure 7 A schematic diagram of the working process of the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention, when the fourth diode (D4) is turned on, the first diode (D1), the first power switch tube (S1) and the second power switch tube (S2) are turned off;

[0039] Figure 8 A schematic diagram of the working process of the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention, wherein the second power switch tube (S2) is turned on, and the first diode (D1), the fourth diode (D4) and the first power switch tube (S1) are turned off;

[0040] exist Figures 6 to 8 In the figure, E is a DC power supply, D1 is a first diode, D2 is a second diode, D3 is a third diode, D4 ​​is a fourth diode, D5 is a fifth diode, D6 is a sixth diode, L1 is a first resonant inductor; L2 is a second resonant inductor (L2), C1 is a first resonant capacitor, C2 is a second resonant capacitor (C2), S1 is a first power switch tube (S1), S2 is a second power switch tube, R1 is a first absorption resistor, R2 is a second absorption resistor, and T is a transformer.

[0041] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0042] For easier understanding, see Figure 3 , Figure 3 The present invention provides an embodiment of a high-frequency resonant pulsed bipolar dielectric barrier discharge power supply, comprising: a DC power supply, a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a first resonant inductor (L1), a second resonant inductor (L2), a first absorption resistor (R1), a second absorption resistor (R2), a first power switch tube (S1), a second power switch tube (S2), a first resonant capacitor (C1), a second resonant capacitor (C2), and a step-up transformer with a center tap;

[0043] The anode of the DC power supply is connected to the cathode of the first diode (D1) and the cathode of the fourth diode (D4) respectively;

[0044] The anode of the first diode (D1) is connected to the first end of the first resonant inductor (L1);

[0045] The second end of the first resonant inductor (L1) is respectively connected to the first end of the first resonant capacitor (C1) and the cathode of the second diode (D2);

[0046] The anode of the second diode (D2) is connected to the cathode of the third diode (D3) and the first end of the first primary winding of the transformer respectively;

[0047] The cathode of the third diode (D3) is connected to the first end of the first absorption resistor (R1);

[0048] The second end of the first absorption resistor (R1) is respectively connected to the first end of the first power switch tube (S1) and the second end of the first primary winding of the transformer;

[0049] The anode of the fourth diode (D4) is connected to the first end of the second resonant inductor (L2);

[0050] The second end of the second resonant inductor (L2) is connected to the first end of the second resonant capacitor (C2) and the cathode of the fifth diode (D5) respectively;

[0051] The anode of the fifth diode (D5) is connected to the cathode of the sixth diode (D6) and the first end of the second primary winding of the transformer respectively;

[0052] The cathode of the sixth diode (D6) is connected to the first end of the second absorption resistor (R2);

[0053] The second end of the second absorption resistor (R2) is respectively connected to the first end of the second power switch tube (S2) and the second end of the second primary winding of the transformer;

[0054] The cathode of the DC power supply is respectively connected to the second end of the first resonant capacitor (C1), the second end of the second resonant capacitor (C2), the second end of the first power switch tube (S1), and the second end of the second power switch tube (S2);

[0055] The first end and the second end of the secondary winding of the transformer are respectively connected to the two ends of the dielectric barrier load.

[0056] Specifically, the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention has four operating modes. The operating modes of the high-frequency resonant pulse bipolar dielectric barrier discharge power supply provided by the present invention are introduced below:

[0057] Here, E is set as the DC power supply, D1 is the first diode, D2 is the second diode, D3 is the third diode, D4 ​​is the fourth diode, D5 is the fifth diode, D6 is the sixth diode, L1 is the first resonant inductor; L2 is the second resonant inductor, C1 is the first resonant capacitor, C2 is the second resonant capacitor, S1 is the first power switch tube, S2 is the second power switch tube, R1 is the first absorption resistor, R2 is the second absorption resistor, and T is the transformer.

[0058] Working mode 1:

[0059] At this time, if Figure 5 As shown, Figure 5 This is a schematic diagram of the working process of the high-frequency resonant pulsed bipolar dielectric barrier discharge power supply provided by the present invention, with the first diode D1 turned on, the second diode D2, and the first power switch S1 and the second power switch S2 turned off. Due to the conduction of the first diode D1 and the disconnection of the second diode D2, the first power switch S1, and the second power switch S2, a resonant circuit D1→L1→C1 is formed, and the voltage on the first resonant capacitor C1 gradually increases. When the first resonant capacitor C1 reaches its maximum value, the reverse blocking effect of the conduction of the first diode (D1) causes all power switching devices in the power supply to be in the off state, and the voltage on the first resonant capacitor C1 remains unchanged.

[0060] Working mode 2:

[0061] At this time, if Figure 6 As shown, Figure 6 This is a schematic diagram of the high-frequency resonant pulsed bipolar dielectric barrier discharge power supply provided by the present invention, with the first power switch S1 turned on and the first diode D1, fourth diode D4, and second power switch S2 turned off. The conduction of the first power switch S1 and the disconnection of the first diode D1, fourth diode D4, and second power switch S2 form a resonant circuit (C1→N1→S1) on the primary side of the transformer, causing a sharp increase in the current flowing through coil N1. This causes a sharp increase in the voltage of the dielectric barrier discharge load connected to the secondary side of the transformer, resulting in a pulsed excitation voltage during the positive half-cycle.

[0062] Working mode 3:

[0063] At this time, if Figure 7 As shown, Figure 7 This is a schematic diagram of the high-frequency resonant pulsed bipolar dielectric barrier discharge power supply provided by the present invention, showing the operation of the power supply when the fourth diode D4 is turned on and the fifth diode D5, first power switch S1, and second power switch S2 are turned off. Due to the conduction of the fourth diode D4, the fifth diode D5, second power switch S1, and second power switch S2 are turned off, forming a resonant circuit from D4 to L2 to C2, and the voltage on the second resonant capacitor C2 gradually increases. When the second resonant capacitor C2 reaches its maximum value, the conduction of the second diode (D2) and the reverse blocking effect of the fourth diode D4 cause all power switches in the power supply to be turned off, and the voltage on the second resonant capacitor C2 remains unchanged.

[0064] Working mode 4:

[0065] At this time, if Figure 8 As shown, Figure 8 This is a schematic diagram of the operation of a high-frequency resonant pulsed bipolar dielectric barrier discharge power supply provided by the present invention, with the second power switch S2 turned on and the first diode D1, fourth diode D4, and second power switch S1 turned off. With the second power switch S2 turned on and the first diode D1, fourth diode D4, and second power switch S2 turned off, a resonant circuit C2 → N2 → S2 is formed on the primary side of the transformer. The current flowing through coil N2 increases dramatically, causing the voltage of the dielectric barrier load connected to the secondary side of the transformer to also increase sharply, forming a pulsed excitation voltage in the negative half-cycle.

[0066] In the power supply-resonant inductor-resonant capacitor series circuit, taking any positive half resonant circuit (power supply E, first resonant inductor L1, first resonant capacitor C1 circuit as an example), the mode 1 circuit constraint equation is:

[0067]

[0068] The circuit constraint equation for mode 2 is:

[0069]

[0070] Where, L s is the transformer leakage inductance, u DBD is the dielectric barrier discharge load voltage

[0071] Obviously, when the dielectric barrier load parameters and transformer parameters are determined, the specific parameter values ​​of the circuit can be obtained through equations (1) and (2).

[0072] As a preferred embodiment, the capacitance value of the first resonant capacitor (C1) is equal to the capacitance value of the second resonant capacitor (C2); the inductance value of the first resonant inductor (L1) is equal to the inductance value of the second resonant inductor (L2); the resistance value of the first absorption resistor (R1) is equal to the resistance value of the second absorption resistor (R2); the operating frequency and duty cycle of the first power switch tube (S1) and the second power switch tube (S2) are equal, and the duty cycle is not higher than 0.5; the first diode (D1), the second diode (D2), the third diode, the fourth diode (D4), the fifth diode (D5), and the sixth diode (D6) are all fast recovery diodes; the first power switch tube (S1) and the second power switch tube (S2) are both NMOS, wherein. The first ends of the first power switch tube (S1) and the second power switch tube (S2) are both NMOS drains; the second ends of the first power switch tube (S1) and the second power switch tube (S2) are both NMOS sources; the operating frequencies of the first power switch tube (S1) and the second power switch tube (S2) can be changed to adjust the output frequency of the power supply.

[0073] It should be noted that, in this specification, relational terms such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises", "comprising" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element.

[0074] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high-frequency resonant pulse bipolar dielectric barrier discharge power supply, characterized in that: include: A DC power supply, a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a first resonant inductor (L1), a second resonant inductor (L2), a first absorption resistor (R1), a second absorption resistor (R2), a first power switch tube (S1), a second power switch tube (S2), a first resonant capacitor (C1), a second resonant capacitor (C2), and a step-up transformer with a center tap; The anode of the DC power supply is connected to the anode of the first diode (D1) and the anode of the fourth diode (D4) respectively; The cathode of the first diode (D1) is connected to the first end of the first resonant inductor (L1); The second end of the first resonant inductor (L1) is respectively connected to the first end of the first resonant capacitor (C1) and the anode of the second diode (D2); The cathode of the second diode (D2) is respectively connected to the anode of the third diode (D3) and the first end of the first primary winding of the transformer; The cathode of the third diode (D3) is connected to the first end of the first absorption resistor (R1); The second end of the first absorption resistor (R1) is respectively connected to the first end of the first power switch tube (S1) and the second end of the first primary winding of the transformer; The cathode of the fourth diode (D4) is connected to the first end of the second resonant inductor (L2); The second end of the second resonant inductor (L2) is respectively connected to the first end of the second resonant capacitor (C2) and the anode of the fifth diode; The cathode of the fifth diode (D5) is respectively connected to the anode of the sixth diode (D6) and the first end of the second primary winding of the transformer; The cathode of the sixth diode (D6) is connected to the first end of the second absorption resistor (R2); The second end of the second absorption resistor (R2) is respectively connected to the first end of the second power switch tube (S2) and the second end of the second primary winding of the transformer; The cathode of the DC power supply is respectively connected to the second end of the first resonant capacitor (C1), the second end of the second resonant capacitor (C2), the second end of the first power switch tube (S1), and the second end of the second power switch tube (S2); The first end and the second end of the secondary winding of the transformer are respectively connected to the two ends of the dielectric barrier load.

2. A high-frequency resonant pulsed bipolar dielectric barrier discharge power supply according to claim 1, characterized in that: The capacitance value of the first resonant capacitor (C1) is equal to the capacitance value of the second resonant capacitor (C2).

3. The high-frequency resonant pulse bipolar dielectric barrier discharge power supply according to claim 1, characterized in that: The inductance value of the first resonant inductor (L1) is equal to the inductance value of the second resonant inductor (L2).

4. The high-frequency resonant pulse bipolar dielectric barrier discharge power supply according to claim 1, characterized in that: The resistance value of the first absorption resistor (R1) is equal to the resistance value of the second absorption resistor (R2).

5. The high-frequency resonant pulse bipolar dielectric barrier discharge power supply according to claim 1, characterized in that: The operating frequencies and duty cycles of the first power switch tube (S1) and the second power switch tube (S2) are equal, and the duty cycle is not higher than 0.

5.

6. A high-frequency resonant pulsed bipolar dielectric barrier discharge power supply according to any one of claims 1 to 5, characterized in that: The first diode (D1), the second diode (D2), the third diode (D3), the fourth diode (D4), the fifth diode (D5), and the sixth diode (D6) are all fast recovery diodes.

7. A high-frequency resonant pulsed bipolar dielectric barrier discharge power supply according to any one of claims 1 to 5, characterized in that: The first power switch tube (S1) and the second power switch tube (S2) are both NMOS, wherein the first ends of the first power switch tube (S1) and the second power switch tube (S2) are both drains of the NMOS; and the second ends of the first power switch tube (S1) and the second power switch tube (S2) are both sources of the NMOS.

8. A high-frequency resonant pulsed bipolar dielectric barrier discharge power supply according to any one of claims 1 to 5, characterized in that: The operating frequencies of the first power switch tube (S1) and the second power switch tube (S2) can be changed to adjust the output frequency of the power supply.

9. A high-frequency resonant pulse bipolar dielectric barrier discharge power supply according to any one of claims 1 to 5, characterized in that: The secondary side of the transformer can be connected to loads of various types.

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