X-ray Measurement Method, Device, Electronic Device and Storage Medium

Abstract

The present application provides a method, apparatus, electronic device, and storage medium for measuring X-rays. The measurement method is applied to an X-ray diffractometer and includes: obtaining the X-ray energy spectrum, X-ray light intensity ratio, scanning step size, and angular resolution of a preset polychromatic light source, where the preset polychromatic light source includes at least two characteristic radiation wavelengths; irradiating at least two diffraction crystal planes of a sample to be measured with the scanning step size to determine the crystal plane diffraction spectra of each diffraction crystal plane; determining the weighted crystal plane diffraction spectra of each diffraction crystal plane based on each X-ray light intensity ratio and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths; determining the broadened crystal plane diffraction spectra of each weighted crystal plane diffraction spectrum through variable convolution based on the angular resolution and each weighted crystal plane diffraction spectrum; determining the preset sample parameters of the sample to be measured through at least one method of searching the sample parameter space based on the crystal plane diffraction spectra and the broadened crystal plane diffraction spectra; reducing the duration of scanning the sample and improving the accuracy of analyzing the structural information of the sample.

Description

Technical Field

[0001] This application belongs to the technical field of X-ray diffraction, and particularly relates to a method, device, electronic device, and storage medium for measuring X-rays. Background Art

[0002] Currently, the parameters of a sample to be measured are mainly determined by irradiating the sample to be measured with a monochromatic X-ray source to obtain the X-ray diffraction spectrum of the sample to be measured, and then analyzing the structure information of the sample to be measured by analyzing the X-ray diffraction spectrum corresponding to the monochromatic X-ray source. However, at a relatively low defined emission power, the scanning time of the monochromatic X-ray source for irradiating the sample to be measured is long, and the accuracy of analyzing the structure information of the sample to be measured cannot meet the requirements.

[0003] The prior art has the problems of long scanning time of the monochromatic X-ray source for the sample to be measured and low accuracy of the measurement results. Summary of the Invention

[0004] Embodiments of this application provide a method, device, electronic device, and storage medium for measuring X-rays, which can solve the problems of long scanning time of the monochromatic X-ray source for the sample to be measured and low accuracy of the measurement results.

[0005] In a first aspect, an embodiment of this application provides a method for measuring X-rays, which is applied to an X-ray diffractometer and includes:

[0006] Obtaining the X-ray energy spectrum, X-ray light intensity ratio, scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer, where the preset polychromatic light source includes at least two characteristic radiation wavelengths;

[0007] Based on the preset polychromatic light source, irradiating at least two diffraction crystal planes of the sample to be measured with the scanning step size to determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes, where each of the diffraction crystal planes includes at least one asymmetric diffraction crystal plane;

[0008] Based on the respective X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths, determining the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes;

[0009] Based on the angular resolution and the respective weighted crystal plane diffraction spectra, determining the broadened crystal plane diffraction spectra corresponding to the respective weighted crystal plane diffraction spectra through variable convolution;

[0010] Based on the respective crystal plane diffraction spectra and the respective broadened crystal plane diffraction spectra, determining the preset sample parameters of the sample to be measured through at least one method of searching the sample parameter space.

[0011] In one embodiment, the preset composite color light source includes three characteristic radiation wavelengths, and each of the characteristic radiation wavelengths includes a first characteristic radiation wavelength, a second characteristic radiation wavelength, and a third characteristic radiation wavelength;

[0012] The X-ray light intensity ratio characterizes the radiation energy intensity ratio among the first characteristic radiation wavelength, the second characteristic radiation wavelength, and the third characteristic radiation wavelength. The radiation energy intensity ratio corresponding to the first characteristic radiation wavelength is the first proportionality coefficient, the radiation energy intensity ratio corresponding to the second characteristic radiation wavelength is the second proportionality coefficient, and the radiation energy intensity ratio corresponding to the third characteristic radiation wavelength is the third proportionality coefficient;

[0013] Any one of the simulated crystal plane diffraction spectra includes a first simulated crystal plane diffraction spectrum corresponding to the first characteristic radiation wavelength, a second simulated crystal plane diffraction spectrum corresponding to the second characteristic radiation wavelength, and a third simulated crystal plane diffraction spectrum corresponding to the third characteristic radiation wavelength.

[0014] In one embodiment, determining the weighted crystal plane diffraction spectrum corresponding to each diffraction crystal plane based on each of the X-ray light intensity ratios and the simulated crystal plane diffraction spectrum corresponding to the characteristic radiation wavelength includes:

[0015] Determining the first weighted crystal plane diffraction spectrum corresponding to any one of the diffraction crystal planes based on the product of the first proportionality coefficient and the first simulated crystal plane diffraction spectrum of any one of the diffraction crystal planes;

[0016] Determining the second weighted crystal plane diffraction spectrum corresponding to any one of the diffraction crystal planes based on the product of the second proportionality coefficient and the second simulated crystal plane diffraction spectrum of any one of the diffraction crystal planes;

[0017] Determining the third weighted crystal plane diffraction spectrum corresponding to any one of the diffraction crystal planes based on the product of the third proportionality coefficient and the third simulated crystal plane diffraction spectrum of any one of the diffraction crystal planes;

[0018] Determining the weighted crystal plane diffraction spectrum corresponding to any one of the simulated crystal plane diffraction spectra based on the sum of the first weighted crystal plane diffraction spectrum, the second weighted crystal plane diffraction spectrum, and the third weighted crystal plane diffraction spectrum.

[0019] In one embodiment, the angular resolution includes a constant angular resolution and a variable angular resolution. The constant angular resolution characterizes that the standard deviation of the Gaussian function is a constant standard deviation, and the variable angular resolution characterizes that the standard deviation of the Gaussian function is a polynomial standard deviation;

[0020] Determining the broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on the angular resolution and each weighted crystal plane diffraction spectrum includes:

[0021] Based on the Gaussian function corresponding to the constant standard deviation and each of the weighted crystal plane diffraction spectra, the broadened crystal plane diffraction spectra corresponding to each of the weighted crystal plane diffraction spectra are determined by variable convolution; or,

[0022] Based on the Gaussian function corresponding to the polynomial standard deviation and each of the weighted crystal plane diffraction spectra, the broadened crystal plane diffraction spectra corresponding to each of the weighted crystal plane diffraction spectra are determined by variable convolution.

[0023] In one embodiment, the calculation formula of the variable convolution is:

[0024]

[0025] where h(x) is the broadened crystal plane diffraction spectrum; f(x) is the weighted crystal plane diffraction spectrum based on the variable x; g(x, μ, σ) is the Gaussian function; μ is the central value of the Gaussian function; σ is the standard deviation of the Gaussian function, and σ(x) = ax 2 + bx + c, where a, b, and c are all coefficients; f(t) is the weighted crystal plane diffraction spectrum based on the variable t, is the convolution operator.

[0026] In one embodiment, if both coefficients a and b are 0, the standard deviation of the Gaussian function is the constant standard deviation;

[0027] if either of the coefficients a and b is not 0, the standard deviation of the Gaussian function is the polynomial standard deviation.

[0028] In one embodiment, the value range of the scanning step size is less than or equal to the preset scanning step size.

[0029] In a second aspect, an embodiment of the present application provides an X-ray measurement device, which is applied to an X-ray diffractometer and includes:

[0030] An acquisition module, configured to acquire the X-ray energy spectrum, X-ray light intensity ratio, scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer, where the preset polychromatic light source includes at least 2 characteristic radiation wavelengths;

[0031] A first determination module, configured to irradiate at least 2 diffraction crystal planes of a to-be-measured sample with the scanning step size based on the preset polychromatic light source, and determine the crystal plane diffraction spectra of the X-rays corresponding to each of the diffraction crystal planes, where each of the diffraction crystal planes includes at least 1 asymmetric diffraction crystal plane;

[0032] A second determination module, configured to determine the weighted crystal plane diffraction spectra corresponding to each of the diffraction crystal planes based on each of the X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths;

[0033] A third determination module, configured to determine, based on the angular resolution and each of the weighted crystal plane diffraction spectra, a broadened crystal plane diffraction spectrum corresponding to each of the weighted crystal plane diffraction spectra through variable convolution;

[0034] A fourth determination module, configured to determine a preset sample parameter of the sample to be measured by at least one method of searching a sample parameter space based on each of the crystal plane diffraction spectra and each of the broadened crystal plane diffraction spectra.

[0035] In a third aspect, an embodiment of the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the method described in any one of the above first aspect is implemented.

[0036] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium storing a computer program, and when the computer program is executed by a processor, the method described in any one of the above first aspect is implemented.

[0037] In a fifth aspect, an embodiment of the present application provides a computer program product, and when the computer program product runs on an electronic device, the electronic device is caused to execute the method described in any one of the above first aspect.

[0038] It can be understood that the beneficial effects of the above second aspect to the fifth aspect can refer to the relevant descriptions in the above first aspect, and will not be repeated here.

[0039] The beneficial effects of the embodiments of the present application compared with the prior art are:

[0040] The X-ray measurement method of the present application is applied to an X-ray diffractometer. By obtaining the X-ray energy spectrum, the X-ray light intensity ratio, the scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer, where the preset polychromatic light source includes at least two characteristic radiation wavelengths; irradiating at least two diffraction crystal planes of a sample to be measured with the scanning step size based on the preset polychromatic light source to determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes, where each diffraction crystal plane includes at least one asymmetric diffraction crystal plane; determining the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes based on the respective X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths; determining the broadened crystal plane diffraction spectra corresponding to the respective weighted crystal plane diffraction spectra through variable convolution based on the angular resolution and the respective weighted crystal plane diffraction spectra; determining the preset sample parameters of the sample to be measured through at least one method of searching the sample parameter space based on the respective crystal plane diffraction spectra and the respective broadened crystal plane diffraction spectra; compared with the prior art, when having the same low defined emission power as the monochromatic X-ray light source, since the scanning step size of the polychromatic X-ray light source including at least two characteristic radiation wavelengths in the present application is much larger than that of the monochromatic X-ray light source, the duration of scanning and irradiating the sample to be measured can be greatly reduced, and the working efficiency of the X-ray diffractometer is greatly improved. Moreover, due to the weighted processing and variable convolution broadening processing of the crystal plane diffraction spectra of multiple characteristic radiation wavelengths, the accuracy of analyzing the structural information of the sample to be measured is improved, and the satisfaction of users is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0042] Figure 1 is a schematic flowchart of the X-ray measurement method provided by an embodiment of the present application;

[0043] Figure 2 is a schematic diagram of the light intensity distribution curves of X-rays with scanning step sizes of 0.5°, 0.4°, and 0.2° respectively provided by an embodiment of the present application;

[0044] Figure 3 is a schematic diagram of the linear coordinate display of the crystal plane diffraction spectrum of X-rays of a single-layer silicon germanium epitaxial film on a single-layer silicon substrate provided by an embodiment of the present application;

[0045] Figure 4 is a schematic diagram of the logarithmic coordinate display of the crystal plane diffraction spectrum of X-rays of a single-layer silicon germanium epitaxial film on a single-layer silicon substrate provided by an embodiment of the present application;

[0046] Figure 5 It is a schematic flowchart for determining the weighted crystal plane diffraction spectra corresponding to each diffraction crystal plane based on the ratio of each X-ray light intensity and the simulated crystal plane diffraction spectrum corresponding to the characteristic radiation wavelength in another embodiment of the present application for S300;

[0047] Figure 6 It is a schematic comparison diagram between the weighted crystal plane diffraction spectrum before broadening and the broadened crystal plane diffraction spectrum with a constant standard deviation in one embodiment of the present application;

[0048] Figure 7 It is a schematic comparison diagram between the weighted crystal plane diffraction spectrum before broadening and the broadened crystal plane diffraction spectrum with a polynomial standard deviation in one embodiment of the present application;

[0049] Figure 8 It is a schematic structural diagram of the X-ray measuring device provided in the embodiment of the present application. Detailed implementation manners

[0050] In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are presented to thoroughly understand the embodiments of the present application. However, those skilled in the art should clearly understand that the present application can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid unnecessary details from interfering with the description of the present application.

[0051] It should be understood that when used in the specification and the appended claims of the present application, the term "comprising" indicates the presence of the described features, wholes, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0052] It should also be understood that the term "and / or" used in the specification and the appended claims of the present application refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0053] In addition, in the description of the specification and the appended claims of the present application, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0054] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of this application. Thus, statements such as "in one embodiment", "in some embodiments", "in other some embodiments", "in still other embodiments", etc. that appear in different places in this specification are not necessarily all referring to the same embodiment, but rather mean "one or more but not all embodiments", unless otherwise specifically emphasized in another way. The terms "comprising", "including", "having" and their variants all mean "including but not limited to", unless otherwise specifically emphasized in another way.

[0055] With the progress of science and technology, the semiconductor industrial process has gradually entered below 10 nanometers, which has put forward higher requirements for semiconductor measurement technology. Since X-rays have a shorter wavelength (0.01 - 10 nanometers), X-ray measurement has gradually been applied to the semiconductor industry. For example, the X-ray reflectivity (XRR) method for measuring the thickness of semiconductor thin films, the X-ray fluorescence method for measuring material composition or thickness, and the X-ray diffraction (XRD) method for measuring and characterizing material properties.

[0056] For the X-ray diffraction method for characterizing the material properties of semiconductors, currently, the parameters of the sample to be measured are mainly determined by irradiating the sample to be measured with a monochromatic X-ray light source to obtain the X-ray diffraction spectrum of the sample to be measured, and then the structural information of the sample to be measured is analyzed by analyzing the X-ray diffraction spectrum corresponding to the monochromatic X-ray light source. However, at a relatively low defined emission power, the scanning irradiation time of the monochromatic X-ray light source on the sample to be measured is long, and the accuracy of analyzing the structural information of the sample to be measured cannot meet the requirements.

[0057] In view of the above problems, the X-ray measurement method provided by the present application is applied to an X-ray diffractometer. By obtaining the X-ray energy spectrum, the X-ray light intensity ratio, the scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer, wherein the preset polychromatic light source includes at least two characteristic radiation wavelengths; irradiating at least two diffraction crystal planes of a sample to be measured with the scanning step size based on the preset polychromatic light source to determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes, wherein each diffraction crystal plane includes at least one asymmetric diffraction crystal plane; determining the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes based on each X-ray light intensity ratio and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths; determining the broadened crystal plane diffraction spectra corresponding to the respective weighted crystal plane diffraction spectra through variable convolution based on the angular resolution and each weighted crystal plane diffraction spectrum; determining the preset sample parameters of the sample to be measured through at least one method of searching the sample parameter space based on each crystal plane diffraction spectrum and each broadened crystal plane diffraction spectrum; compared with the prior art, when having the same low defined emission power as a monochromatic X-ray light source, since the scanning step size of the polychromatic X-ray light source including at least two characteristic radiation wavelengths in the present application is much larger than that of the monochromatic X-ray light source, the duration of scanning and irradiating the sample to be measured can be greatly reduced, and the working efficiency of the X-ray diffractometer can be greatly improved. Moreover, due to the weighted processing and variable convolution broadening processing of the crystal plane diffraction spectra of multiple characteristic radiation wavelengths, the accuracy of analyzing the structural information of the sample to be measured is improved, and the satisfaction of users is improved.

[0058] The technical solution of the present application will be described below through specific embodiments.

[0059] In the first aspect, as Figure 1 shown, an embodiment of the present application provides an X-ray measurement method, which is applied to an X-ray diffractometer and includes:

[0060] S100, obtaining the X-ray energy spectrum, the X-ray light intensity ratio, the scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer.

[0061] In the prior art, in an X-ray diffractometer, when copper is generally used as the anode target material, the most commonly used X-ray light source is copper Kα radiation. The Kα radiation line of copper generally includes the first characteristic line of Kα1 and the second characteristic line of Kα2. The characteristic radiation wavelength of the Kα1 characteristic ray of copper is and the characteristic radiation wavelength of the Kα2 radiation characteristic line of copper is . These two characteristic lines are very close and are usually regarded as a double peak in X-ray diffraction analysis, called the copper Kα double peak. In most X-ray diffraction analyses, the characteristic radiation wavelength of Kα1 is mainly used, that is, a monochromatic X-ray radiation light source is used.

[0062] In one embodiment, the preset polychromatic light source includes at least two characteristic radiation wavelengths, that is, each characteristic radiation wavelength includes a first characteristic radiation wavelength and a second characteristic radiation wavelength. For example, the preset polychromatic light source uses the first characteristic line and the second characteristic line of the Kα radiation line of copper, and each characteristic line has a corresponding characteristic radiation wavelength.

[0063] In another embodiment, the preset polychromatic light source includes three characteristic radiation wavelengths, that is, each characteristic radiation wavelength includes a first characteristic radiation wavelength, a second characteristic radiation wavelength, and a third characteristic radiation wavelength; for example, the preset polychromatic light source uses the first characteristic line, the second characteristic line, and the third characteristic line of the Kα radiation line of copper, and each characteristic line has a corresponding characteristic radiation wavelength.

[0064] In one embodiment, the X-ray light intensity ratio characterizes the radiation energy intensity ratio among the first characteristic radiation wavelength, the second characteristic radiation wavelength, and the third characteristic radiation wavelength. The two-dimensional light intensity distribution of the preset polychromatic light source is collected by a high-resolution semiconductor detector of an X-ray diffractometer, and then the two-dimensional light intensity distribution is converted into a one-dimensional X-ray energy spectrum (i.e., the light intensity distribution curve of the X-ray), and then the X-ray light intensity ratio among the first characteristic radiation wavelength, the first characteristic radiation wavelength, and the third characteristic radiation wavelength is determined according to the radiation energy intensities corresponding to the three characteristic radiation wavelengths in the X-ray energy spectrum; wherein, the radiation energy intensity ratio corresponding to the first characteristic radiation wavelength is the first proportionality coefficient, the radiation energy intensity ratio corresponding to the second characteristic radiation wavelength is the second proportionality coefficient, and the radiation energy intensity ratio corresponding to the third characteristic radiation wavelength is the third proportionality coefficient.

[0065] In one embodiment, when taking the radiation energy intensity ratio corresponding to any characteristic radiation wavelength as a reference, the sum of the first proportionality coefficient, the second proportionality coefficient, and the third proportionality coefficient is greater than 1; after normalizing the radiation energy intensity ratios corresponding to the first characteristic radiation wavelength, the second characteristic radiation wavelength, and the third characteristic radiation wavelength, the first proportionality coefficient, the second proportionality coefficient, and the third proportionality coefficient are all less than or equal to 1. It should be noted that in this embodiment, the setting method of the proportionality coefficient is not specifically limited and is set according to the requirements of the X-ray diffractometer.

[0066] In one embodiment, the value range of the scanning step is less than or equal to a preset scanning step, and the preset scanning step is 0.2°; since the scanning step of the monochromatic X-ray light source in the prior art is generally relatively small, for example, 0.001°, and the scanning of the sample generally requires 2° to 3°, so the prior art needs to scan the sample 2,000 to 3,000 times, which takes a long time. However, using the preset scanning step of the preset polychromatic light source in this embodiment only requires 20 to 30 scans. Compared with the prior art, the scanning speed is increased by 200 to 300 times, greatly reducing the long time of scanning and irradiating the sample to be measured, and greatly improving the working efficiency of the X-ray diffractometer.

[0067] In one embodiment, as Figure 2 shown, if the scanning step of the light intensity distribution curve of the X-ray is greater than 0.2°, it is necessary to perform a correction process on the light intensity distribution curve of the X-ray and convert it into a one-dimensional equivalent light intensity distribution curve with a scanning step equal to 0.2°. Figure 2 -(1) is the light intensity distribution curve of the X-ray with a scanning step of 0.5°. Figure 2 -(2) is the light intensity distribution curve of the X-ray with a scanning step of 0.4°. Figure 2 -(3) is the light intensity distribution curve of the X-ray with a scanning step of 0.2°.

[0068] In one embodiment, since single crystal silicon is a crystal material with the lowest impurity content made artificially, the preset polychromatic light source is used to irradiate the standard sample of single crystal silicon, and the X-ray diffraction spectrum of single crystal silicon is fitted by the Lorentz function, and the angle at 50% of the radiation energy intensity of the diffraction peak with the highest radiation energy intensity is calculated. The angle at 50% of the radiation energy intensity is the angular resolution of the X-ray diffractometer.

[0069] S200, irradiate at least two diffraction crystal planes of the sample to be measured with a scanning step based on the preset polychromatic light source, and determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes.

[0070] In one embodiment, irradiate at least two diffraction crystal planes of the sample to be measured with a scanning step based on the preset polychromatic light source, and determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes. The crystal plane diffraction spectra corresponding to the respective diffraction crystal planes also become the sample crystal plane diffraction spectra, reducing the irradiation time of the sample to be measured and improving the accuracy of the crystal plane diffraction spectra.

[0071] In one embodiment, each diffraction crystal plane includes at least one asymmetric diffraction crystal plane, and two parallel diffraction crystal planes of the sample to be measured cannot be selected. The value range of the included angle between the two diffraction crystal planes is less than or equal to 90°. For example, it is necessary to measure the lattice parameters (A H , C V ) of the diamond face-centered cubic material of the sample to be measured, and select two diffraction crystal planes as (H1 K 1 L 1 ) and (H 2 K 2 L 2 ), and determine the X-ray crystal plane diffraction spectra corresponding to two diffraction crystal planes respectively.

[0072] In one embodiment, any crystal plane diffraction spectrum includes a first crystal plane diffraction spectrum corresponding to a first characteristic radiation wavelength, a second crystal plane diffraction spectrum corresponding to a second characteristic radiation wavelength, and a third crystal plane diffraction spectrum corresponding to a third characteristic radiation wavelength.

[0073] In one embodiment, as Figure 3 、 4 shown, Figure 3 is a schematic diagram of the linear coordinate display of the X-ray crystal plane diffraction spectrum of a single-layer silicon germanium epitaxial film on a single-layer silicon substrate, Figure 4 is a schematic diagram of the logarithmic coordinate display of the X-ray crystal plane diffraction spectrum of a single-layer silicon germanium epitaxial film on a single-layer silicon substrate, where the ordinate is the normalized radiation energy intensity and the abscissa is the fitting angle.

[0074] S300. Based on the X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths, determine the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes.

[0075] In one embodiment, based on the X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths, determine the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes, where the simulated crystal plane diffraction spectrum is a diffraction spectrum generated by simulating the diffraction crystal planes of a sample to be measured according to an X-ray diffraction calculation model and the system parameters of an X-ray diffractometer. Since the weighted crystal plane diffraction spectrum is formed by combining the simulated crystal plane diffraction spectra of at least two characteristic lines, the accuracy of the simulated crystal plane diffraction spectrum of the sample to be measured is improved.

[0076] In one embodiment, before determining the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes based on the X-ray light intensity ratios and the respective crystal plane diffraction spectra, it further includes: selecting an X-ray diffraction calculation model and configuring the model parameters of the selected X-ray diffraction calculation model. Among them, the X-ray diffraction calculation model includes the X-ray diffraction kinematic equation and the X-ray diffraction dynamic equation. For example, the Takagi-Taupin X-ray diffraction dynamic equation.

[0077] In one embodiment, the model parameters include the system parameters of the X-ray diffractometer, where the system parameters include at least one of the detection angle resolution, crystal plane index (HKL), fitting angle range, upper and lower limits of the fitting parameters, at least two characteristic X-ray energy spectra, or the X-ray light intensity ratios of at least two characteristic X-rays;

[0078] In one embodiment, the model parameters further include parameters of the sample to be measured. The parameters of the sample to be measured are output parameters, and the parameters of the sample to be measured include at least one of material category, material concentration (or doping concentration), material thickness, crystal structure parameters, crystal plane inclination angle of the substrate, inclination angle of the epitaxial film relative to the substrate, dislocations, strain, or material relaxation degree.

[0079] In one embodiment, any simulated crystal plane diffraction spectrum includes a first simulated crystal plane diffraction spectrum corresponding to a first characteristic radiation wavelength, a second simulated crystal plane diffraction spectrum corresponding to a second characteristic radiation wavelength, and a third simulated crystal plane diffraction spectrum corresponding to a third characteristic radiation wavelength.

[0080] In one embodiment, as Figure 5 shown, based on the proportion of each X-ray light intensity and the simulated crystal plane diffraction spectrum corresponding to the characteristic radiation wavelength, determining the weighted crystal plane diffraction spectrum corresponding to each diffracted crystal plane includes:

[0081] S310, determining the first weighted crystal plane diffraction spectrum corresponding to any diffracted crystal plane based on the product of the first proportionality coefficient and the first simulated crystal plane diffraction spectrum of any diffracted crystal plane.

[0082] S320, determining the second weighted crystal plane diffraction spectrum corresponding to any diffracted crystal plane based on the product of the second proportionality coefficient and the second simulated crystal plane diffraction spectrum of any diffracted crystal plane.

[0083] S330, determining the third weighted crystal plane diffraction spectrum corresponding to any diffracted crystal plane based on the product of the third proportionality coefficient and the third simulated crystal plane diffraction spectrum of any diffracted crystal plane.

[0084] S340, determining the weighted crystal plane diffraction spectrum corresponding to any simulated crystal plane diffraction spectrum based on the sum of the first weighted crystal plane diffraction spectrum, the second weighted crystal plane diffraction spectrum, and the third weighted crystal plane diffraction spectrum.

[0085] In one embodiment, the first proportionality coefficient is r 1 , the second proportionality coefficient is r 2 , the third proportionality coefficient is r 3 , the first simulated crystal plane diffraction spectrum is f 1 (x), the second simulated crystal plane diffraction spectrum is f 2 (x), the third simulated crystal plane diffraction spectrum is f 3 (x); the weighted crystal plane diffraction spectrum f(x) = r 1 ×f 1 (x) + r 2 ×f 2 (x) + r 3 ×f 3 (x).

[0086] The S400 determines the broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on the angular resolution and each weighted crystal plane diffraction spectrum.

[0087] In one embodiment, for an infinitely thick crystal sample material, the X-ray diffraction spectrum is an infinitely narrow diffraction peak. Therefore, based on the angular resolution and each weighted crystal plane diffraction spectrum, the broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum is determined through variable convolution, improving the accuracy of the parameters of the sample to be measured.

[0088] In one embodiment, the angular resolution includes a constant angular resolution and a variable angular resolution. The constant angular resolution characterizes that the standard deviation of the Gaussian function is a constant standard deviation, and the variable angular resolution characterizes that the standard deviation of the Gaussian function is a polynomial standard deviation (for example, a quadratic function standard deviation).

[0089] In one embodiment, determining the broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on the angular resolution and each weighted crystal plane diffraction spectrum includes: determining the broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on the Gaussian function corresponding to the constant standard deviation and each weighted crystal plane diffraction spectrum; or determining the broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on the Gaussian function corresponding to the polynomial standard deviation and each weighted crystal plane diffraction spectrum; introducing the diffraction peak broadening caused by the resolution of the X-ray diffractometer and the diffraction peak broadening caused by the sample characteristics of the sample to be measured into the X-ray diffraction model simultaneously, improving the accuracy of the broadened crystal plane diffraction spectrum for the sample parameters of the sample to be measured.

[0090] In one embodiment, the calculation formula of the variable convolution is:

[0091]

[0092] where h(x) is the broadened crystal plane diffraction spectrum; f(x) is the weighted crystal plane diffraction spectrum based on the variable x; g(x, μ, σ) is the Gaussian function; μ is the central value of the Gaussian function; σ is the standard deviation of the Gaussian function, and σ(x) = ax 2 + bx + c, where a, b, and c are all coefficients; f(t) is the weighted crystal plane diffraction spectrum based on the variable t, is the convolution operator.

[0093] In one embodiment, if the coefficients a and b are both 0, the standard deviation of the Gaussian function is a constant standard deviation; if either of the coefficients a and b is not 0, the standard deviation of the Gaussian function is a polynomial standard deviation. As Figure 6 、 7 shown, Figure 6 is a comparison schematic diagram of the weighted crystal plane diffraction spectrum before broadening and the broadened crystal plane diffraction spectrum with a constant standard deviation, Figure 6The constant standard deviation σ(x) = 0.01, Figure 7 It is a schematic diagram for comparing the weighted crystal plane diffraction spectrum before broadening and the broadened crystal plane diffraction spectrum with the standard deviation of the quadratic function. Figure 7 The standard deviation of the quadratic function σ(x) = 0.0001x 2 + 0.01. The energy spectrum line at the upper part of the two figures is the broadened crystal plane diffraction spectrum after convolution, and the energy spectrum line at the lower part is the weighted crystal plane diffraction spectrum before convolution.

[0094] S500. Based on each crystal plane diffraction spectrum and each broadened crystal plane diffraction spectrum, the preset sample parameters of the sample to be measured are determined by at least one method of searching the sample parameter space.

[0095] In one embodiment, based on each crystal plane diffraction spectrum and each broadened crystal plane diffraction spectrum, the preset sample parameters of the sample to be measured are determined by at least one method of searching the sample parameter space, that is, the broadened diffraction spectrum processed by the X-ray diffraction model is fitted and compared with each crystal plane diffraction spectrum (i.e., the sample crystal plane diffraction spectrum) of the sample to be measured, so as to determine the preset sample parameters of the sample to be measured.

[0096] In one embodiment, the method of searching the sample parameter space includes at least one of the least squares method, the likelihood function method, the neural network gradient descent method or the genetic algorithm, which improves the operation speed of determining the preset sample parameters of the sample to be measured and reduces the working time of determining the preset sample parameters of the sample to be measured.

[0097] It should be understood that the magnitudes of the sequence numbers of the steps in the above embodiments do not mean the order of execution. The order of execution of each process should be determined according to its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

[0098] The beneficial effects of the embodiments of the present application compared with the prior art are:

[0099] The X-ray measurement method of the present application is applied to an X-ray diffractometer. By obtaining the X-ray energy spectrum, X-ray light intensity ratio, scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer, where the preset polychromatic light source includes at least two characteristic radiation wavelengths; irradiating at least two diffraction crystal planes of a sample to be measured with the scanning step size based on the preset polychromatic light source to determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes, where each diffraction crystal plane includes at least one asymmetric diffraction crystal plane; determining the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes based on the respective X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths; determining the broadened crystal plane diffraction spectra corresponding to the respective weighted crystal plane diffraction spectra through variable convolution based on the angular resolution and the respective weighted crystal plane diffraction spectra; determining the preset sample parameters of the sample to be measured through at least one method of searching the sample parameter space based on the respective crystal plane diffraction spectra and the respective broadened crystal plane diffraction spectra; compared with the prior art, when having the same low defined emission power as a monochromatic X-ray light source, since the scanning step size of the polychromatic X-ray light source including at least two characteristic radiation wavelengths in the present application is much larger than that of the monochromatic X-ray light source, the duration of scanning and irradiating the sample to be measured can be greatly reduced, and the working efficiency of the X-ray diffractometer is greatly improved. Moreover, due to the weighted processing and variable convolution broadening processing of the crystal plane diffraction spectra of multiple characteristic radiation wavelengths, the accuracy of analyzing the structural information of the sample to be measured is improved, and the satisfaction of users is improved.

[0100] In a second aspect, as Figure 8 shown, an embodiment of the present application provides an X-ray measurement device 100, which is applied to an X-ray diffractometer and includes:

[0101] An acquisition module 110, configured to acquire the X-ray energy spectrum, X-ray light intensity ratio, scanning step size of a preset polychromatic light source, and the angular resolution of the X-ray diffractometer, where the preset polychromatic light source includes at least two characteristic radiation wavelengths.

[0102] A first determination module 120, configured to irradiate at least two diffraction crystal planes of a sample to be measured with the scanning step size based on the preset polychromatic light source to determine the crystal plane diffraction spectra of the X-rays corresponding to the respective diffraction crystal planes, where each diffraction crystal plane includes at least one asymmetric diffraction crystal plane.

[0103] A second determination module 130, configured to determine the weighted crystal plane diffraction spectra corresponding to the respective diffraction crystal planes based on the respective X-ray light intensity ratios and the simulated crystal plane diffraction spectra corresponding to the characteristic radiation wavelengths.

[0104] A third determination module 140, configured to determine the broadened crystal plane diffraction spectra corresponding to the respective weighted crystal plane diffraction spectra through variable convolution based on the angular resolution and the respective weighted crystal plane diffraction spectra.

[0105] A fourth determination module 150 is configured to determine a preset sample parameter of a sample to be measured based on the diffraction spectra of each crystal plane and the broadened diffraction spectra of each crystal plane by using at least one method for searching a sample parameter space.

[0106] In one embodiment, the second determination module 130 is further configured to perform:

[0107] Determine a first weighted crystal plane diffraction spectrum corresponding to any diffraction crystal plane based on the product of a first proportionality coefficient and a first simulated crystal plane diffraction spectrum of any diffraction crystal plane; determine a second weighted crystal plane diffraction spectrum corresponding to any diffraction crystal plane based on the product of a second proportionality coefficient and a second simulated crystal plane diffraction spectrum of any diffraction crystal plane; determine a third weighted crystal plane diffraction spectrum corresponding to any diffraction crystal plane based on the product of a third proportionality coefficient and a third simulated crystal plane diffraction spectrum of any diffraction crystal plane; determine a weighted crystal plane diffraction spectrum corresponding to any diffraction crystal plane based on the sum of the first weighted crystal plane diffraction spectrum, the second weighted crystal plane diffraction spectrum, and the third weighted crystal plane diffraction spectrum.

[0108] In one embodiment, the third determination module 140 is further configured to determine a broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on a Gaussian function corresponding to a constant standard deviation and each weighted crystal plane diffraction spectrum; or determine a broadened crystal plane diffraction spectrum corresponding to each weighted crystal plane diffraction spectrum through variable convolution based on a Gaussian function corresponding to a polynomial standard deviation and each weighted crystal plane diffraction spectrum.

[0109] It should be noted that for the information interaction, execution process, etc. between the above-mentioned device / units, since they are based on the same concept as the method embodiment of the present application, for their specific functions and the technical effects brought, reference can be specifically made to the method embodiment part, and details are not described herein again.

[0110] Those skilled in the art can clearly understand that for the convenience and brevity of description, only the above-mentioned division of each functional unit and module is used as an example for illustration. In practical applications, the above-mentioned functions can be allocated to different functional units and modules according to needs, that is, the internal structure of the device is divided into different functional units or modules to complete all or part of the functions described above. Each functional unit and module in the embodiment can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of a software functional unit. In addition, the specific names of each functional unit and module are only for the convenience of mutual distinction and do not limit the protection scope of the present application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the foregoing method embodiment, and details are not described herein again.

[0111] In a third aspect, an embodiment of the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the method described in any one of the above first aspect is implemented.

[0112] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium storing a computer program, and when the computer program is executed by a processor, the method described in any one of the above first aspect is implemented.

[0113] In a fifth aspect, an embodiment of the present application provides a computer program product. When the computer program product runs on an electronic device, the electronic device is caused to execute the method described in any one of the above first aspect.

[0114] It can be understood that the beneficial effects of the above second aspect to fifth aspect can be referred to the relevant descriptions in the above first aspect, and will not be elaborated herein.

[0115] A method for measuring X-rays provided by an embodiment of the present application can be applied to terminal devices such as tablet computers, notebook computers, ultra-mobile personal computers (UMPCs), netbooks, personal digital assistants (PDAs), etc. The embodiment of the present application does not impose any restrictions on the specific type of the electronic device.

[0116] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, to implement all or part of the processes in the above embodiment methods of the present application, a computer program can be used to instruct relevant hardware to complete. The computer program can be stored in a computer-readable storage medium. When the computer program is executed by a processor, the steps of the above various method embodiments can be implemented. Among them, the computer program includes computer program code, and the computer program code can be in the form of source code, object code, executable file, or some intermediate form, etc.

[0117] The computer-readable medium may at least include: any entity or device capable of carrying computer program code to the photographing device / terminal device, a recording medium, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium. For example, a USB flash drive, a portable hard disk, a magnetic disk, or an optical disc, etc. In certain jurisdictions, according to legislation and patent practice, the computer-readable medium may not be an electrical carrier signal and a telecommunication signal.

[0118] In the above embodiments, the descriptions of the various embodiments have their own emphases. For the parts not detailed or recorded in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0119] Those of ordinary skill in the art can realize that the units and algorithm steps of the examples described in conjunction with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of this application.

[0120] In the embodiments provided in this application, it should be understood that the disclosed device / network device and method can be implemented in other ways. For example, the device / network device embodiments described above are merely illustrative. For example, the division of the modules or units is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed coupling or direct coupling or communication connection between each other can be through some interfaces, and the indirect coupling or communication connection of the device or unit can be in an electrical, mechanical or other form.

[0121] The units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or may be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0122] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included within the protection scope of the present application.

Claims

1. A method for measuring X-rays, characterized in that: Applications in X-ray diffractometers include: Obtaining an X-ray energy spectrum, an X-ray light intensity ratio, a scanning step length, and an angular resolution of an X-ray diffractometer of a preset polychromatic light source, wherein the preset polychromatic light source includes at least two characteristic radiation wavelengths; Based on the preset polychromatic light source, at least two diffraction crystal planes of the sample to be tested are irradiated with the scanning step length, and the crystal plane diffraction spectrum of the X-ray corresponding to each of the diffraction crystal planes is determined, wherein each of the diffraction crystal planes includes at least one asymmetric diffraction crystal plane; Determining a weighted crystal plane diffraction spectrum corresponding to each of the diffraction crystal planes based on the ratio of each of the X-ray light intensities and the simulated crystal plane diffraction spectrum corresponding to the characteristic radiation wavelength; Based on the angular resolution and each of the weighted crystal plane diffraction spectra, determining a broadened crystal plane diffraction spectrum corresponding to each of the weighted crystal plane diffraction spectra through variable convolution; Based on each of the crystal plane diffraction spectra and each of the broadened crystal plane diffraction spectra, determining the preset sample parameters of the sample to be tested by at least one method of searching the sample parameter space; The calculation formula of the variable convolution is: Wherein, h(x) is the broadened crystal plane diffraction spectrum; f(x) is the weighted crystal plane diffraction spectrum based on the variable x; g(x, μ, σ) is a Gaussian function; μ is the center value of the Gaussian function; σ is the standard deviation of the Gaussian function, σ(x)=ax 2 +bx+c, a, b, c are coefficients; f(t) is the weighted crystal plane diffraction spectrum based on variable t, is the convolution operator.

2. The method according to claim 1, characterized in that The preset polychromatic light source includes three characteristic radiation wavelengths, each of which includes a first characteristic radiation wavelength, a second characteristic radiation wavelength, and a third characteristic radiation wavelength; The X-ray light intensity ratio represents the radiation energy intensity ratio between the first characteristic radiation wavelength, the second characteristic radiation wavelength and the third characteristic radiation wavelength, the radiation energy intensity ratio corresponding to the first characteristic radiation wavelength is the first proportionality coefficient, the radiation energy intensity ratio corresponding to the second characteristic radiation wavelength is the second proportionality coefficient, and the radiation energy intensity ratio corresponding to the third characteristic radiation wavelength is the third proportionality coefficient; Any of the simulated crystal plane diffraction spectra includes a first simulated crystal plane diffraction spectrum corresponding to the first characteristic radiation wavelength, a second simulated crystal plane diffraction spectrum corresponding to the second characteristic radiation wavelength, and a third simulated crystal plane diffraction spectrum corresponding to the third characteristic radiation wavelength.

3. The method according to claim 2, characterized in that The step of determining a weighted crystal plane diffraction spectrum corresponding to each of the diffraction crystal planes based on the ratio of each of the X-ray light intensities and the simulated crystal plane diffraction spectrum corresponding to the characteristic radiation wavelength comprises: Determine a first weighted crystal plane diffraction spectrum corresponding to any of the diffraction crystal planes based on the product of the first proportionality coefficient and a first simulated crystal plane diffraction spectrum of any of the diffraction crystal planes; Determining a second weighted crystal plane diffraction spectrum corresponding to any of the diffraction crystal planes based on the product of the second proportionality coefficient and a second simulated crystal plane diffraction spectrum of any of the diffraction crystal planes; Determining a third weighted crystal plane diffraction spectrum corresponding to any of the diffraction crystal planes based on a product of the third proportionality coefficient and a third simulated crystal plane diffraction spectrum of any of the diffraction crystal planes; Based on the sum of the first weighted crystal plane diffraction spectrum, the second weighted crystal plane diffraction spectrum and the third weighted crystal plane diffraction spectrum, a weighted crystal plane diffraction spectrum corresponding to any of the diffraction crystal planes is determined.

4. The method according to claim 1, characterized in that The angular resolution includes a constant angular resolution and a variable angular resolution, wherein the constant angular resolution represents that the standard deviation of the Gaussian function is a constant standard deviation, and the variable angular resolution represents that the standard deviation of the Gaussian function is a polynomial standard deviation; Based on the angular resolution and each of the weighted crystal plane diffraction spectra, a broadened crystal plane diffraction spectrum corresponding to each of the weighted crystal plane diffraction spectra is determined by variable convolution, including: Based on the Gaussian function corresponding to the constant standard deviation and each of the weighted crystal plane diffraction spectra, determining the broadened crystal plane diffraction spectrum corresponding to each of the weighted crystal plane diffraction spectra through variable convolution; or, Based on the Gaussian function corresponding to the polynomial standard deviation and each of the weighted crystal plane diffraction spectra, the broadened crystal plane diffraction spectrum corresponding to each of the weighted crystal plane diffraction spectra is determined by variable convolution.

5. The method according to claim 1, characterized in that If the coefficients a and b are both 0, the standard deviation of the Gaussian function is a constant standard deviation; If any one of the coefficients a and b is not 0, the standard deviation of the Gaussian function is a polynomial standard deviation.

6. The method according to any one of claims 1 to 5, characterized in that The value range of the scanning step length is less than or equal to the preset scanning step length.

7. An X-ray measuring device, characterized in that: Applications in X-ray diffractometers include: An acquisition module, used to acquire an X-ray energy spectrum, an X-ray light intensity ratio and a scanning step length of a preset polychromatic light source and an angular resolution of an X-ray diffractometer, wherein the preset polychromatic light source includes at least two characteristic radiation wavelengths; A first determination module is used to irradiate at least two diffraction crystal planes of the sample to be tested with the scanning step length based on the preset polychromatic light source, and determine the crystal plane diffraction spectrum of the X-ray corresponding to each of the diffraction crystal planes, wherein each of the diffraction crystal planes includes at least one asymmetric diffraction crystal plane; A second determination module is used to determine a weighted crystal plane diffraction spectrum corresponding to each of the diffraction crystal planes based on the ratio of each of the X-ray light intensities and a simulated crystal plane diffraction spectrum corresponding to the characteristic radiation wavelength; A third determination module is used to determine the broadened crystal plane diffraction spectrum corresponding to each of the weighted crystal plane diffraction spectra through variable convolution based on the angular resolution and each of the weighted crystal plane diffraction spectra; A fourth determination module, configured to determine the preset sample parameters of the sample to be tested by at least one method of searching a sample parameter space based on each of the crystal plane diffraction spectra and each of the broadened crystal plane diffraction spectra; The calculation formula of the variable convolution is: Wherein, h(x) is the broadened crystal plane diffraction spectrum; f(x) is the weighted crystal plane diffraction spectrum based on the variable x; g(x, μ, σ) is a Gaussian function; μ is the center value of the Gaussian function; σ is the standard deviation of the Gaussian function, σ(x)=ax 2 +bx+c, a, b, c are coefficients; f(t) is the weighted crystal plane diffraction spectrum based on variable t, is the convolution operator.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the method according to any one of claims 1 to 6 is implemented.

9. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.

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