A method for detecting air tightness of semiconductor packaging

Abstract

The present application provides a method for detecting air tightness of semiconductor packaging, which relates to the field of air tightness detection technology. The method includes: obtaining a standard detection pressure value and a target detection pressure value, and calculating the pressure difference between the two. At the same time, the pressure tolerance value is calculated according to the temperature and humidity data of the standard and target detection environments. The pressure difference is evaluated using the tolerance value to obtain a leakage evaluation value, thereby judging the air tightness of the chip stacking structure to be tested and generating a test result. The present application can solve the problem that the existing technology cannot avoid the influence of environmental factors, the detection accuracy is insufficient, and the accuracy and reliability of the air tightness detection results are affected, which further affects the quality control of semiconductor devices, ensures the reliability and stability of the product under different environmental conditions, and improves the air tightness and overall performance.

Description

Technical Field

[0001] The present application relates to the technical field of airtightness detection, and in particular to an airtightness detection method for semiconductor packaging. Background Art

[0002] In the semiconductor packaging process, the chip is usually placed in a shell made of plastic, ceramic or other materials, and connected to the outside through various technologies such as wire bonding, flip chip, etc. The chip stacking structure is a technology that stacks multiple chips together to form an integral structure, which can provide higher performance, smaller size and lower power consumption. In the chip stacking structure, each chip may have different functions, such as processor, memory, input and output interface, etc. After the package is completed, it must be tested for airtightness to confirm whether the isolation between the inside of the package and the outside world is effective. Traditional airtightness detection methods include humidity sensitive indicator test, dye penetration test and helium leak detection test. But it is not accurate enough and the equipment cost is high. With the development of the semiconductor industry, the accuracy and efficiency of airtightness detection are increasingly required.

[0003] In summary, the prior art cannot avoid the influence of environmental factors and has insufficient detection accuracy, which affects the accuracy and reliability of airtightness detection results, further affecting the quality control of semiconductor devices. Summary of the invention

[0004] The purpose of this application is to provide a semiconductor package airtightness detection method to solve the problem that the prior art cannot avoid the influence of environmental factors and the detection accuracy is insufficient, which affects the accuracy and reliability of the airtightness detection results, further affecting the quality control of semiconductor devices.

[0005] In view of the above problems, the present application provides a method for detecting the airtightness of a semiconductor package.

[0006] The present application provides a method for detecting air tightness of semiconductor packaging, wherein the method includes: obtaining a standard detection pressure value, wherein the standard detection pressure value is used to characterize the air pressure change of a standard non-leakage product in a sealed detection space under a preset inflation pressure, wherein the standard pressure value is a continuous pressure data set with a time mark; obtaining a target detection pressure value, wherein the target detection pressure value characterizes the air pressure change of a chip stacking structure to be tested in a sealed detection space, wherein the target detection pressure value and the standard detection pressure value have the same preset inflation pressure and a corresponding time mark; performing a pressure difference operation on the standard detection pressure value and the target detection pressure value through a differential pressure operation module to obtain a pressure numerical difference; respectively obtaining standard detection temperature and humidity data and target detection temperature and humidity data, and based on the standard detection temperature and humidity data and the target detection temperature and humidity data, associating the non-leakage product with the chip stacking structure to be tested to calculate a pressure tolerance value and determine the pressure tolerance value; performing a pressure leakage evaluation on the pressure data difference according to the pressure tolerance value to determine a leakage evaluation value; and generating an air tightness detection result according to the leakage evaluation value.

[0007] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0008] By obtaining a standard detection pressure value, the standard detection pressure value is used to characterize the air pressure change of a standard leak-free product in a sealed detection space under a preset inflation pressure, wherein the standard pressure value is a continuous pressure data set with a time mark; obtaining a target detection pressure value, the target detection pressure value characterizes the air pressure change of the stacked structure of the chip to be tested in the sealed detection space, and the target detection pressure value has the same preset inflation pressure and a corresponding time mark as the standard detection pressure value; performing a pressure difference calculation on the standard detection pressure value and the target detection pressure value through a differential pressure calculation module to obtain a pressure numerical difference; respectively obtaining standard detection temperature and humidity data, target detection temperature and humidity data, The standard detection temperature and humidity data and the target detection temperature and humidity data are used to calculate the pressure tolerance value of the non-leaking product and the stacked structure of the chip to be tested, and the pressure tolerance value is determined; the pressure leakage amount of the pressure data difference is evaluated according to the pressure tolerance value to determine the leakage evaluation value; the airtightness test result is generated according to the leakage evaluation value, which effectively solves the problem that the accuracy and reliability of the airtightness test result are affected by the lack of detection accuracy due to the influence of environmental factors in the prior art, which further affects the quality control of semiconductor devices, ensures the reliability and stability of the product under different environmental conditions, and improves the airtightness and overall performance.

[0009] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented according to the contents of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are specifically cited below. It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present application, nor is it intended to limit the scope of the present application. Other features of the present application will become easy to understand through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the present application or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only exemplary, and for ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0011] Figure 1 A schematic diagram of a process for detecting air tightness of a semiconductor package according to the present application;

[0012] Figure 2 A schematic diagram of a process for obtaining a standard test pressure value in a semiconductor package airtightness test method of the present application. DETAILED DESCRIPTION

[0013] The present application provides a semiconductor package airtightness detection method to solve the problem that the prior art cannot avoid the influence of environmental factors and the detection accuracy is insufficient, which affects the accuracy and reliability of the airtightness detection results, further affecting the quality control of semiconductor devices, ensures the reliability and stability of the product under different environmental conditions, and improves the airtightness and overall performance.

[0014] Below, the technical solutions in the present application will be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments of the present application. It should be understood that the present application is not limited to the example embodiments described herein. Based on the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application. It should also be noted that, for the convenience of description, only the parts related to the present application are shown in the accompanying drawings, rather than all of them.

[0015] Embodiment 1

[0016] Please see attached Figure 1 The present application provides a method for detecting airtightness of a semiconductor package, wherein the method specifically comprises the following steps:

[0017] S1: Obtain a standard test pressure value, wherein the standard test pressure value is used to characterize the air pressure change of a standard leak-free product in a sealed test space under a preset inflation pressure, wherein the standard pressure value is a continuous pressure data set with a time stamp.

[0018] Specifically, ensure that the standard leak-free product is placed in a sealed test space, such as a pressure test chamber or container. Install one or more high-precision pressure sensors in the test space, connect the pressure sensors to the data acquisition system, and set a target inflation pressure value according to the product specifications and requirements. Use an air pressure source to inflate the test space to a preset pressure value. After reaching the preset pressure during the inflation process, start the data acquisition system to start recording pressure data. Ensure that the data acquisition system records pressure values ​​at a sufficient sampling frequency, such as at least 1000 samples per second, and records timestamps synchronously. Keep the product at the preset inflation pressure for a period of time to ensure that the air pressure is stable. During this process, continuously record pressure data and timestamps to form a continuous pressure data set with time stamps.

[0019] S2: Obtain a target detection pressure value, wherein the target detection pressure value represents the air pressure change of the chip stack structure to be tested in the sealed detection space, and the target detection pressure value and the standard detection pressure value have the same preset inflation pressure and a corresponding time mark.

[0020] Specifically, use an inflation output device to inflate the detection space to a preset inflation pressure, and record the pressure value and timestamp during the inflation process. Install the chip stack structure to be tested in the detection space to ensure that it is sealed and connected to the detection space. Start real-time monitoring of the air pressure changes of the chip stack structure to be tested in the detection space. Use a pressure sensor to record the pressure value at each time point, and ensure that the recorded timestamp corresponds to the timestamp of the standard detection pressure value. Synchronize the timestamp of the target detection pressure value with the timestamp of the standard detection pressure value to ensure the correspondence. Record all target detection pressure values ​​and their corresponding timestamps.

[0021] S3: performing pressure difference calculation on the standard detection pressure value and the target detection pressure value through a pressure difference calculation module to obtain a pressure numerical difference.

[0022] Specifically, synchronize the data sets to ensure that their timestamps are aligned. If the time resolution of the data sets is different, interpolate or resample them so that they can be compared at the same time point. Use the differential pressure operation module to operate on the two data sets. This is a module used to calculate the difference between two pressure values. In semiconductor package airtightness detection, it is used to compare the standard detection pressure value and the target detection pressure value. For each time point, calculate the difference between the standard detection pressure value and the target detection pressure value, that is, the pressure difference. Analyze the pressure difference data set and observe the trend of the pressure difference over time.

[0023] S4: obtaining standard detection temperature and humidity data and target detection temperature and humidity data respectively, and calculating the pressure tolerance value by associating the non-leaking product with the stacked structure of the chip to be tested based on the standard detection temperature and humidity data and the target detection temperature and humidity data, and determining the pressure tolerance value.

[0024] Specifically, use temperature and humidity sensors to obtain temperature and humidity data of the standard test environment and the target test environment respectively. Ensure that the sensor is accurately calibrated and has high enough precision to meet the test requirements. Record the temperature and humidity data of the standard test environment, which should be obtained when the leak-free product is in an ideal state. Also record the temperature and humidity data of the target test environment, which should be obtained when the chip stacking structure to be tested is tested. Ensure that the temperature and humidity data of the standard test and the target test have the same time resolution and corresponding timestamp. The pressure tolerance value refers to the pressure difference within a certain range of temperature and humidity changes that allows the product to work normally. Analyze the temperature and humidity data of the standard test and the target test to determine the relationship and difference between them. Evaluate the impact of temperature and humidity changes on the sealing performance of the product based on the material properties and design specifications of the product. Use this information to calculate the pressure tolerance value. The pressure tolerance value refers to the maximum range allowed for the internal pressure change of the product after taking into account the temperature and humidity changes.

[0025] S5: Evaluate the pressure leakage of the pressure data difference according to the pressure tolerance value to determine a leakage evaluation value.

[0026] Specifically, the pressure tolerance value refers to the maximum pressure difference that the product can withstand under specific temperature and humidity conditions without leakage or performance degradation. Use the calculated pressure data difference, that is, the difference between the standard detection pressure value and the target detection pressure value. Analyze the time series of the pressure data difference and observe its changing trend over time. Apply the pressure tolerance value to the analysis of the pressure data difference. If the pressure data difference is within the pressure tolerance value range, it can be considered that the sealing performance of the product is qualified. If the pressure data difference exceeds the pressure tolerance value range, it indicates that there is a leak or other problem. The leakage evaluation value can be determined by calculating the average, maximum or integral value of the pressure data difference that exceeds the pressure tolerance value. The leakage evaluation value can also be determined in combination with the sensitivity of the leak detection and the requirements of the specific application.

[0027] S6: Generate an airtightness detection result according to the leakage evaluation value.

[0028] Specifically, determine whether the leakage evaluation value is within an acceptable range, which is usually determined by the product design specifications. According to the application and performance requirements of the product, the judgment criteria for the leakage evaluation value are set by technical personnel in this field. These criteria include the maximum allowable leakage rate, the percentage limit of the leakage amount, etc. Based on the comparison results of the leakage evaluation value and the judgment criteria, the air tightness test results are generated. If the leakage evaluation value is within the acceptable range, the product can be considered to be qualified for air tightness. If the leakage evaluation value is out of range, the product may be judged to be unqualified for air tightness.

[0029] Further, if Figure 2 As shown, step S1 of the present application also includes:

[0030] A preset inflation pressure is set, an inflation output device is configured, the sealing detection space is inflated according to the preset inflation pressure, and the pressure value is recorded in real time through a pressure sensor, and a one-to-one mapping relationship between the pressure value and the monitoring time mark is established; when the pressure value reaches the target pressure, the inflation output device is cut off, the sealing state of the sealing detection space is maintained, the pressure value is continuously recorded through the pressure sensor, and the cut-off node mark is performed until the maintenance time period is reached; the standard detection pressure value is obtained according to all pressure values ​​and their time marks.

[0031] Specifically, a gas pressure value is preset by a technician in the field, and this value should be higher than the atmospheric pressure to ensure that the product can remain stable during the test. Prepare an inflatable output device, such as a compressed air source or a pump, and configure it to provide a preset inflatable pressure. Connect the inflatable output device to the sealed detection space and start to inflate it. The pressure value is recorded in real time by a pressure sensor installed in the sealed detection space. At the same time, the time mark corresponding to each pressure value is recorded to establish a one-to-one mapping relationship. When the pressure value recorded by the pressure sensor reaches the preset target pressure, the inflatable output device is immediately cut off. At this time, the sealed detection space should remain sealed, and gas leakage or external gas is not allowed to enter. After cutting off the inflatable output device, continue to record the pressure value through the pressure sensor. The moment of cutting off the inflatable output device is marked, and this moment is called the cut-off node. Continue to record the pressure value until the predetermined maintenance time period is reached. During the entire maintenance time, ensure that the sealing state of the sealed detection space is not destroyed. According to all the recorded pressure values ​​and their time marks, analyze the data and determine the period of stable pressure. During the period of stable pressure, the average or median of the pressure value can be calculated as the standard detection pressure value.

[0032] Furthermore, step S4 of the present application also includes:

[0033] According to the standard detection temperature and humidity data and the target detection temperature and humidity data, the first pressure change caused by the temperature and humidity difference is calculated; according to the stacking structure of the leakage-free product and the chip to be tested, the chip volume change is determined; according to the chip volume change, the influence of the chip volume change on the pressure is calculated to obtain the second pressure change; according to the first pressure change and the second pressure change, dimensionality reduction and fusion are performed to obtain the pressure tolerance value, which represents the normal pressure difference for temperature and humidity changes and chip volume changes.

[0034] Specifically, the standard detection temperature and humidity data and the target detection temperature and humidity data are analyzed and the difference between them is calculated. According to the physical properties of gas, such as Charles' law and Gay-Lussac's law, the pressure change caused by the change of temperature and humidity is calculated. At a constant volume, the pressure of the gas is proportional to the temperature and inversely proportional to the absolute humidity. According to the design and material characteristics of the stacked structure of the leak-free product and the chip to be tested, the volume change of the chip under temperature and humidity changes is analyzed. The volume change of the chip may be caused by factors such as thermal expansion coefficient and hygroscopic expansion. Using Boyle's law, at a constant temperature, the pressure of the gas is inversely proportional to the volume, to calculate the pressure change caused by the change of chip volume. If the chip volume increases, the pressure will decrease; if the volume decreases, the pressure will increase. The first pressure change and the second pressure change are comprehensively analyzed to consider all influencing factors. Dimensionality reduction fusion can combine data of multiple dimensions into a comprehensive indicator. It is used to combine the effects of temperature and humidity changes and chip volume changes on pressure. Through dimensionality reduction fusion analysis, a comprehensive pressure change, that is, the pressure tolerance value, is determined. The pressure tolerance value represents the normal pressure difference allowed under changes in temperature, humidity and chip volume.

[0035] Furthermore, the present application also includes:

[0036] Obtain standard detection temperature data and target detection temperature data, and calculate the pressure impact value of temperature, where the calculation formula is: ,in, is the standard initial pressure value, For standard detection temperature data, Detect temperature data for the target; obtain standard detection humidity data and target detection humidity data, and calculate the pressure impact value of humidity, where the calculation formula is: , Standard test humidity data, Target detection humidity data; superimpose the pressure influence value of the temperature and the pressure influence value of the humidity to obtain the first pressure change.

[0037] Specifically, standard detection temperature data and target detection temperature data are obtained, which are from temperature sensors and are measured in standard detection environments and target detection environments. Using the formula ,in, is the standard initial pressure value, For standard detection temperature data, To calculate the pressure impact value of temperature for the target detection temperature data, obtain the standard detection humidity data and the target detection humidity data, which come from the humidity sensor and are measured in the standard detection environment and the target detection environment. The calculation formula is: , Standard test humidity data, The target detects humidity data to calculate the pressure influence value of humidity, and adds the pressure influence value of temperature and the pressure influence value of humidity to obtain a first pressure change, which represents the total pressure change caused by changes in temperature and humidity.

[0038] Furthermore, the present application also includes:

[0039] According to the formula: , calculate and obtain the second pressure change, where, The volume of a standard leak-free product. is the chip volume change, is the volumetric strain coefficient.

[0040] Specifically, the volume of a standard leak-free product is measured or determined based on design data. The volumetric strain coefficient is a material property that indicates the amount of pressure change caused by a unit volume change. Use the formula , calculate the second pressure change, ensure the consistency of all units, for example, the unit of volume is cubic meter, and the unit of pressure is Pascal. Analyze the calculated second pressure change to evaluate the impact of chip volume change on system pressure.

[0041] Furthermore, the present application also includes:

[0042] Extract the pre-trained calibration prediction model and extract the initial calibration time; take the initial calibration time as the starting point, perform time distance calculation on the current time, and obtain a predicted time difference; input the predicted time difference into the calibration prediction model to predict the calibration amount and obtain a calibration coefficient; use the calibration coefficient to calibrate the standard detection pressure value and the target detection pressure value.

[0043] Specifically, a pre-trained calibration prediction model is extracted from a model library or storage system. This model is used to predict possible drift or changes in sensor readings over time. The time when the model was last calibrated, that is, the initial calibration time, is obtained. This timestamp is a reference point for the calibration state of the model. Taking the initial calibration time as the starting point, a time distance calculation is performed on the current time. The predicted time difference is the time difference between the current time and the initial calibration time, usually in hours, days, or weeks. The predicted time difference is input into the calibration prediction model. The model predicts the corresponding calibration coefficient based on the time difference. The model outputs the calibration coefficients, which are used to adjust the sensor readings to compensate for changes over time. The standard detection pressure value and the target detection pressure value are adjusted using the calibration coefficients. The purpose of calibration is to make the sensor reading as close as possible to its accurate state at the time of initial calibration. The standard detection pressure value and the target detection pressure value are multiplied by the calibration coefficients to obtain the calibrated pressure value. The calibrated pressure value more accurately reflects the actual pressure state.

[0044] Furthermore, the present application also includes:

[0045] Obtain historical sample data of the pressure detection equipment, obtain calibration data and acquisition data based on the historical sample data, and construct a calibration sample set; based on the calibration sample set, construct a sample sequence of multiple time series nodes; perform data calibration fitting with the calibration sample set of each time series node to obtain a calibration coefficient; based on the sample sequence, align the calibration coefficient with the time series relationship, fit the calibration change relationship between the calibration coefficient and the time difference, learn and train a calibration prediction model, and the calibration prediction model is used to predict the calibration coefficient according to the time difference relationship.

[0046] Specifically, collect historical sample data of pressure detection equipment, which should include calibration data and acquisition data. Calibration data refers to the accurate pressure value obtained by known standards or reference equipment, and acquisition data refers to the raw data obtained from the actual measurement of the pressure sensor. Use historical sample data to build a calibration sample set, and ensure that the sample set contains enough data points to represent different working conditions and environments. Each sample should contain information such as timestamp, calibration data, and acquisition data. According to the timestamp, the calibration sample set is constructed into a sample sequence of multiple time series nodes. Each time series node represents a specific time point, and the sample sequence is arranged in chronological order. Perform data calibration fitting on the calibration sample set of each time series node. Use statistical methods or machine learning algorithms, such as linear regression, neural networks, etc. to fit the relationship between calibration data and acquisition data to obtain calibration coefficients. Based on the sample sequence, align the calibration coefficients in time series. Ensure that the change of the calibration coefficient corresponds to the time difference, so as to analyze the change trend of the calibration coefficient over time. Use the data of the calibration coefficient and the time difference to fit the calibration change relationship between the calibration coefficient and the time difference. Train the calibration prediction model through supervised learning, regression analysis, etc. The goal of the model is to learn how to predict the calibration coefficient based on the time difference. Use a portion of the calibration sample set to validate the model's predictive capabilities. Adjust model parameters based on validation results to improve prediction accuracy. Once the calibration prediction model is trained and validated, it can be applied to actual pressure testing. Use the model to predict calibration coefficients based on the time difference between the current time and the initial calibration time to calibrate the actual collected data.

[0047] Furthermore, the present application also includes:

[0048] According to the number of layers and arrangement relationship of the chip stacking structure to be tested, multiple connection interfaces are set; based on the multiple connection interfaces, hierarchical connections between the chip multi-layer interface and the sealing detection space are established respectively; based on the connection interfaces, the chip multi-layer airtightness detection is performed to obtain the multi-layer airtightness detection result; and the leakage information in the chip stacking structure to be tested is located using the multi-layer airtightness detection result.

[0049] Specifically, according to the number of layers and arrangement relationship of the stacked structure of the chip to be tested, multiple connection interfaces are designed. The connection interface should be able to effectively connect the chip multilayer with the sealed detection space while ensuring airtightness. Based on the designed connection interface, the hierarchical connection between the chip multilayer interface and the sealed detection space is established respectively. Ensure that each layer of the chip can be correctly connected to the detection space and the connection has good airtightness. After the connection is established, the chip multilayer is tested for airtightness. The test can be carried out by methods such as pressure change and gas leakage rate to evaluate the sealing performance of the chip multilayer structure. Through the airtightness test, the multilayer airtightness test results are obtained. These results will contain the sealing performance information of each layer of the chip and the airtightness of the entire stacked structure. Using the multilayer airtightness test results, the sealing performance of each layer of the chip is analyzed to locate the leakage information in the stacked structure of the chip to be tested. The leakage information can be located to a specific chip layer or connection interface for further analysis and repair. According to the located leakage information, the cause of the leakage is analyzed, such as material defects, improper connection, etc. Take appropriate measures to repair it, such as replacing defective chips, adjusting the connection interface, etc.

[0050] In summary, the semiconductor package airtightness detection method provided by the present application has the following technical effects:

[0051] By obtaining a standard detection pressure value, the standard detection pressure value is used to characterize the air pressure change of a standard leak-free product in a sealed detection space under a preset inflation pressure, wherein the standard pressure value is a continuous pressure data set with a time mark; obtaining a target detection pressure value, the target detection pressure value characterizes the air pressure change of the stacked structure of the chip to be tested in the sealed detection space, and the target detection pressure value has the same preset inflation pressure and a corresponding time mark as the standard detection pressure value; performing a pressure difference calculation on the standard detection pressure value and the target detection pressure value through a differential pressure calculation module to obtain a pressure numerical difference; respectively obtaining standard detection temperature and humidity data, target detection temperature and humidity data, The standard detection temperature and humidity data and the target detection temperature and humidity data are used to calculate the pressure tolerance value of the non-leaking product and the stacked structure of the chip to be tested, and the pressure tolerance value is determined; the pressure leakage amount of the pressure data difference is evaluated according to the pressure tolerance value to determine the leakage evaluation value; the airtightness test result is generated according to the leakage evaluation value, which effectively solves the problem that the accuracy and reliability of the airtightness test result are affected by the lack of detection accuracy due to the influence of environmental factors in the prior art, which further affects the quality control of semiconductor devices, ensures the reliability and stability of the product under different environmental conditions, and improves the airtightness and overall performance.

[0052] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

[0053] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application belong to the scope of the present application and its equivalent technology, the present application is also intended to include these modifications and variations.

Claims

1. A method for detecting air tightness of semiconductor packaging, characterized in that: The semiconductor package airtightness detection method comprises: Obtaining a standard test pressure value, wherein the standard test pressure value is used to characterize the air pressure change of a standard leak-free product in a sealed test space under a preset inflation pressure, wherein the standard test pressure value is a continuous pressure data set with a time stamp; Obtaining a target detection pressure value, wherein the target detection pressure value represents the air pressure change of the chip stack structure to be tested in the sealed detection space, and the target detection pressure value and the standard detection pressure value have the same preset inflation pressure and a corresponding time mark; Performing pressure difference calculation on the standard detection pressure value and the target detection pressure value through a pressure difference calculation module to obtain a pressure value difference; Respectively obtain standard detection temperature and humidity data and target detection temperature and humidity data, and based on the standard detection temperature and humidity data and the target detection temperature and humidity data, associate the non-leaking product with the stacked structure of the chip to be tested to calculate the pressure tolerance value and determine the pressure tolerance value; Performing pressure leakage evaluation on the pressure numerical difference according to the pressure tolerance value to determine a leakage evaluation value; Generating an airtightness test result according to the leakage evaluation value; Wherein, the step of obtaining the standard detection pressure value includes: Set a preset inflation pressure, configure an inflation output device, inflate the sealed detection space according to the preset inflation pressure, and record the pressure value in real time through a pressure sensor to establish a one-to-one mapping relationship between the pressure value and the monitoring time mark; When the pressure value reaches the target pressure, the inflation output device is cut off, the sealing state of the sealing detection space is maintained, the pressure value is continuously recorded by the pressure sensor, and the cut-off node is marked until the maintenance time period is reached; According to all the pressure values ​​and their time stamps, the standard detection pressure value is obtained; Based on the standard detection temperature and humidity data and the target detection temperature and humidity data, the pressure tolerance value is calculated by associating the non-leaking product with the stacked structure of the chip to be tested, and the pressure tolerance value is determined, including: Calculating a first pressure change caused by a temperature and humidity difference according to the standard detection temperature and humidity data and the target detection temperature and humidity data; Determining the chip volume change according to the stacked structure of the non-leaking product and the chip to be tested; According to the chip volume change, calculating the influence of the chip volume change on the pressure, and obtaining a second pressure change; Performing dimensionality reduction fusion according to the first pressure variation and the second pressure variation to obtain the pressure tolerance value, where the pressure tolerance value represents a normal pressure difference for changes in temperature and humidity and changes in chip volume; Calculating a first pressure change caused by a temperature and humidity difference according to the standard detection temperature and humidity data and the target detection temperature and humidity data, including: Obtain standard detection temperature data and target detection temperature data, and calculate the pressure impact value of temperature, where the calculation formula is: ,in, is the standard initial pressure value, For standard detection temperature data, Detect temperature data for the target; Obtain standard detection humidity data and target detection humidity data, and calculate the pressure impact value of humidity. The calculation formula is: , Standard test humidity data, Target detection humidity data; Superimposing the pressure influence value of the temperature and the pressure influence value of the humidity to obtain the first pressure change; The calculating the influence of the chip volume change on the pressure to obtain the second pressure change includes: According to the formula: , calculate and obtain the second pressure change, where, The volume of a standard leak-free product. is the chip volume change, is the volumetric strain coefficient.

2. A semiconductor package airtightness detection method as claimed in claim 1, characterized in that: The pressure difference calculation is performed on the standard detection pressure value and the target detection pressure value by the differential pressure calculation module, and the method further includes: Extract the pre-trained calibration prediction model and extract the initial calibration time; Taking the initial calibration time as the starting point, performing time distance calculation on the current time to obtain a predicted time difference; Inputting the predicted time difference into the calibration prediction model to predict the calibration amount and obtain the calibration coefficient; The standard detection pressure value and the target detection pressure value are calibrated using the calibration coefficient.

3. A semiconductor package airtightness detection method as claimed in claim 2, characterized in that: The extracting of the pre-trained calibration prediction model comprises: Obtain historical sample data of the pressure detection device, obtain calibration data and acquisition data according to the historical sample data, and construct a calibration sample set; Based on the calibration sample set, construct a sample sequence of multiple time series nodes; Perform data calibration fitting with the calibration sample set of each time series node to obtain the calibration coefficient; Based on the sample sequence, the calibration coefficients are aligned in time series, the calibration change relationship between the calibration coefficients and the time difference is fitted, and a calibration prediction model is learned and trained. The calibration prediction model is used to predict the calibration coefficients according to the time difference relationship.

4. A semiconductor package airtightness detection method as claimed in claim 1, characterized in that: The semiconductor package airtightness detection method further comprises: According to the number and arrangement of the stacked layers of the stacked structure of the chip to be tested, a plurality of connection interfaces are provided; Based on the multiple connection interfaces, hierarchical connections are respectively established between the chip multi-layer interface and the sealing detection space; Performing a multi-layer air tightness test on the chip based on the connection interface to obtain a multi-layer air tightness test result; The leakage information in the stacked structure of the chip to be tested is located using the multi-layer airtightness test result.

Images