A single crystal silicon wafer cleaning device and method

Abstract

The present invention relates to a single crystal silicon wafer cleaning device and method, comprising a bearing support 1, a control support 2, a control support 1 and a bearing support 2; the bearing support 2 is hinged at a position directly above the bearing support 1, the control support 1 and the control support 2 are respectively located at two end points of the periphery of the bearing support 1, a bearing column is welded on the back of the bearing support 1, a bearing arm 3 is hinged directly above the control support 2, and a bearing arm 4 is docked at the upper side wall position of the bearing arm 3. The present invention enables the support seat to perform telescopic movement through the threaded transmission relationship between the threaded rod 2 and the internal threaded seat, and the linkage plate will be in staggered contact with the protrusions and grooves on the linkage frame, so that the linkage plate performs reciprocating telescopic movement, and under the action of the linkage rod, the transmission wheel rotates, and the transmission wheel is engaged with the transmission plate, and the nozzle can rotate at this time, and the single crystal silicon surface can be cleaned in two different forms of straight flushing and oblique flushing, thereby improving the cleaning effect of the single crystal silicon wafer.

Description

Technical Field

[0001] The present invention belongs to the technical field of photovoltaic processing, and in particular relates to a single crystal silicon wafer cleaning device and method. Background Art

[0002] Single crystal silicon wafers are prepared through a series of processes including cutting, outer diameter grinding and rounding, slicing, chamfering, grinding, corrosion, etching, cleaning and polishing. Cutting is the process of cutting off the head, tail and part of the single crystal silicon rod that exceeds the customer's specifications;

[0003] Chinese Patent: CN114792641A A single crystal silicon wafer cleaning machine and a method for cleaning single crystal silicon wafers, which respectively control and optimize the control temperature and spray pressure output by the single crystal silicon wafer cleaning machine. When both are optimal at the same time, the spray pressure and temperature are stopped, and the single crystal silicon wafer is cleaned at this temperature and spray pressure, so that the cleaning cleanliness and flatness of the single crystal silicon wafer after cleaning can be optimized;

[0004] However, after the monocrystalline silicon wafer is soaked and cleaned, alkaline components will remain on its surface, which will cause subsequent damage to the silicon wafer. It is difficult to clean it directly by spray cleaning.

[0005] In view of this, a single crystal silicon wafer cleaning device and method are proposed. Summary of the invention

[0006] The purpose of this section is to summarize some aspects of embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the specification abstract and the invention title of this application to avoid blurring the purpose of this section, the specification abstract and the invention title, and such simplifications or omissions cannot be used to limit the scope of the present invention.

[0007] In view of the following technical problems in the prior art: after the single crystal silicon wafer is soaked and cleaned, alkaline components will remain on its surface, which will cause subsequent damage to the silicon wafer and is difficult to clean directly by spray cleaning.

[0008] In order to solve the above technical problems, the present invention provides the following technical solutions: a single crystal silicon wafer cleaning device, comprising a carrying support 1, a control support 2, a control support 1 and a carrying support 2; the carrying support 2 is hinged at a position directly above the carrying support 1, the control support 1 and the control support 2 are respectively located at two end points of the periphery of the carrying support 1, a carrying column is welded to the back of the carrying support 1, a carrying arm 3 is hinged directly above the control support 2, and a carrying arm 4 is connected to the upper side wall of the carrying arm 3; the outer peripheral surfaces of the carrying arm 2 and the carrying arm 4 are both provided with a limit frame with a variable position, and the limit frame mainly includes It comprises a guide seat 1 and a limit clamp, wherein the guide seat 1 is variably connected to the bearing arm 2, and the limit clamp is fixedly connected to the lower position of the guide seat 1; a support frame is arranged between the two bearing arms 1, and a guide rod 2, a threaded rod 2 and a linkage frame are arranged between the support frame and the bearing arm 2, and a support seat with a variable position is arranged on the outer circumference of the guide rod 2 and the threaded rod 2, a nozzle is hinged on the inner edge of the support seat, and a guide seat 2 and an internal threaded seat are arranged above the support seat, the guide rod 2 and the guide seat 2 are in telescopic motion, and the threaded rod 2 and the internal threaded seat are in threaded transmission.

[0009] As an optimal technical solution for single crystal silicon wafer cleaning equipment, a collection groove is milled on the upper surface of the supporting support one, and a collection pipe is arranged around the supporting support one. The cleaned sewage can be treated through the collection groove and the collection pipe. A supporting arm one is hinged directly above the operating support one, and a supporting arm two is docked at the upper side wall of the supporting arm one.

[0010] As an optimal technical solution for single crystal silicon wafer cleaning equipment, the supporting arm 2 and the supporting arm 4 are both provided with a guide rod 1 and a threaded rod 1, the circumferential surface of the guide seat 1 is milled with a guide channel and a threaded channel, the guide seat 1 is telescopically connected to the guide rod 1 by means of the guide channel, the guide seat 1 is threadedly transmitted with the threaded rod 1 by means of the threaded channel, and the input end of the threaded rod 1 is connected to a motor 2.

[0011] As an optimal technical solution for single crystal silicon wafer cleaning equipment, a transmission plate is fixedly connected to the inner edge of the support seat, a transmission wheel is hingedly connected to the upper position of the nozzle, the transmission plate and the transmission wheel are meshed and linked, a linkage shaft is connected to the side of the transmission wheel, and the linkage shaft is located in an eccentric position of the transmission wheel.

[0012] As an optimal technical solution for single crystal silicon wafer cleaning equipment, a channel 1 is milled on the circumferential surface of the support seat, a linkage plate is provided for telescopic movement in the channel, a linkage rod is hingedly connected to the lower end of the linkage plate and the outer circumferential surface of the linkage shaft, and a synchronization plate is docked on the side of the linkage plate.

[0013] As an optimal technical solution for single crystal silicon wafer cleaning equipment, the back of the synchronization plate is provided with an elastic member 2, the bottom end of the elastic member 2 is connected to the upper surface of the support seat, the bottom of the linkage frame is staggered with protrusions and grooves, and the protrusions and grooves are combined into a wave shape.

[0014] As a preferred technical solution for single crystal silicon wafer cleaning equipment, the inner edge of the limit clamp is in a "C" shape, and the upper wall and the lower wall of the inner edge of the limit clamp are provided with supporting plates, and the upper wall and the lower wall circumference of the inner edge of the limit clamp are provided with guide channels, and the top surface of the guide seat is provided with a pressurizer, wherein the pressurizer is connected to the guide channel through an air pipe.

[0015] As an optimal technical solution for single crystal silicon wafer cleaning equipment, a guide tube is fixedly connected in the guide channel, a linkage block is telescopically movable in the guide tube, a bearing seat is arranged in the guide channel, an elastic member 1 is arranged between the sides of the bearing seat and the linkage block facing each other, the two ends of the elastic member 1 are respectively fixedly connected to the bearing seat and the circumferential surface of the linkage block, a flexible pad is arranged on the sides of the two bearing plates facing each other, and the flexible pad is located at the center of the bearing plates.

[0016] As an optimal technical solution for a single crystal silicon wafer cleaning device, a telescopic rod is hinged in the carrier one, and the running end of the telescopic rod is docked with the back of the carrier two. A carrying plate is arranged on the upper peripheral wall of the carrier two, and a number of flow channels are opened on the upper peripheral surface of the carrying plate. A pump is arranged at the eccentric part of the back of the carrier two, and a carrying frame is installed on the back of the carrier one, and a motor one is docked at one end of the carrying frame, and the running end of the motor one is docked with the bottom surface of the telescopic rod.

[0017] A method for cleaning a single crystal silicon wafer comprises the following steps:

[0018] S1. First, prepare a bucket of sodium hydroxide solution with a concentration of 0.1M. This concentration can effectively remove inorganic pollutants on the surface while preventing excessive alkalinity from damaging the silicon wafer.

[0019] S2. Heat the solution to about 60°C. This temperature can accelerate the chemical reaction between the solution and the pollutants, making the cleaning process more efficient.

[0020] S3. Slowly immerse the silicon wafer in the heated sodium hydroxide solution so that the surface of the silicon wafer is completely in contact with the solution. Keep the immersion time at about 15 minutes. During this period, the silicon wafer can be gently shaken to ensure that the solution is fully in contact with the surface contaminants and reacts;

[0021] S4. After cleaning, the silicon wafer is taken out from the solution, and the single crystal silicon wafer is placed on the support tray 2, wherein the nozzle is connected to a deionized water pipe, and the nozzle moves back and forth and swings during movement to remove the residual alkaline components on the single crystal silicon wafer to prevent it from causing subsequent damage to the silicon wafer.

[0022] Beneficial effects of the present invention:

[0023] 1. The present invention can place a single crystal silicon wafer on the carrier tray 2 for subsequent cleaning by controlling the carrier arm 1 and the carrier arm 3 to rotate, and through the motor 2, the threaded channel and the threaded rod 1, the limit frames on the carrier arm 2 and the carrier arm 4 can move in the direction of each other, so that the single crystal silicon wafer can be centered;

[0024] 2. The present invention uses a pressurizer and an air pipe to add air to the guide channel. At this time, the Pa in the guide channel increases, so that the linkage block is pushed out of the guide channel. At this time, the two carriers move toward each other, so that the impact of the single crystal silicon wafer can be reduced when it is vertically washed;

[0025] 3. The present invention uses the threaded transmission relationship between the second threaded rod and the internal threaded seat to make the support seat telescopic movement, and the linkage plate will come into staggered contact with the protrusions and grooves on the linkage frame, so that the linkage plate will reciprocate and telescopic movement. Under the action of the linkage rod, the transmission wheel rotates, and the transmission wheel engages with the transmission plate. At this time, the nozzle can rotate, and the surface of the single crystal silicon can be cleaned in two different forms: direct flushing and oblique flushing (direct flushing: when water directly rushes to the single crystal silicon wafer, the impact force may be large, which will better clean the tiny particles or pollutants on the surface of the silicon wafer, but at the same time, it may also cause some pollutants to slide on the surface of the silicon wafer instead of being thoroughly washed away; oblique flushing: when water rushes to the single crystal silicon wafer obliquely, the impact force may be dispersed, reducing the direct impact on the surface of the silicon wafer. This flushing method may make the water flow more evenly over the surface of the silicon wafer, which helps to take away more pollutants and improve the flushing effect). Through the cooperation of the two methods, the cleaning effect of the single crystal silicon wafer is improved;

[0026] 4. The present invention controls the telescopic rod to make the carrier plate fit with the back of the single crystal silicon wafer. After the vacuum pump is operated, the pressure in the carrier tray 2 causes the carrier plate to be sucked onto the back of the single crystal silicon wafer. At this time, when the motor 1 is running, it can link the telescopic rod and the single crystal silicon wafer to rotate, so that the single crystal silicon wafer can be fully cleaned, and the nozzle that cooperates with the telescopic movement can better clean the single crystal silicon wafer.

[0027] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them:

[0029] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0030] Figure 2 It is a schematic diagram of the back structure of the present invention.

[0031] Figure 3 It is a cutaway schematic diagram of the present invention.

[0032] Figure 4 For the present invention Figure 3 Enlarged schematic diagram at point A in the middle.

[0033] Figure 5 It is a schematic diagram of the structure of the bearing arm 1 and the bearing arm 2 of the present invention.

[0034] Figure 6 For the present invention Figure 5 Enlarged schematic diagram at point C in the middle.

[0035] Figure 7 For the present invention Figure 5 Cutting diagram Figure 1 .

[0036] Figure 8 For the present invention Figure 7 Enlarged schematic diagram of point B in the middle.

[0037] Fig. 9 For the present invention Figure 5 Cutting diagram Figure 2 .

[0038] Fig.10 For the present invention Figure 5 Cutting diagram Figure 3 .

[0039] Reference numerals:

[0040] 100, bearing support 1; 101, bearing column; 102, collecting tank; 103, collecting tube; 104, bearing frame; 105, motor 1; 200, control support 2; 201, bearing arm 3; 202, bearing arm 4; 203, guide rod 1; 204, guide channel; 205, threaded rod 1; 206, threaded channel; 207, motor 2; 208, control support 1; 209, bearing arm 1; 210, bearing arm 2; 211, limit frame; 212, guide seat 1; 213, pressurizer; 214, limit clamp; 215, bearing sheet; 216, flexible pad; 217, linkage block; 218, Guide tube; 219, elastic member 1; 220, bearing seat; 221, transmission plate; 222, linkage shaft; 223, nozzle; 224, transmission wheel; 225, bearing support 2; 226, pumping device; 227, bearing plate; 228, circulation channel; 229, telescopic rod; 300, support frame; 301, guide rod 2; 302, threaded rod 2; 303, linkage frame; 304, support seat; 305, guide seat 2; 306, internal thread seat; 307, protrusion; 308, groove; 309, channel 1; 310, linkage plate; 311, linkage rod; 312, synchronization plate; 313, elastic member 2. DETAILED DESCRIPTION

[0041] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0042] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0043] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0044] Secondly, the present invention is described in detail with reference to the schematic diagram. When describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0045] Example 1

[0046] Reference Figures 1 to 3, which is the first embodiment of the present invention, and provides a single crystal silicon wafer cleaning device, including a carrying tray 100, a control tray 200, a control tray 108 and a carrying tray 225;

[0047] The second bearing bracket 225 is hinged to the upper position of the first bearing bracket 100, the first control bracket 208 and the second control bracket 200 are respectively located at two end points of the periphery of the first bearing bracket 100, the back of the first bearing bracket 100 is welded with a bearing column 101, the upper surface of the first bearing bracket 100 is milled with a collecting groove 102, and the periphery of the first bearing bracket 100 is provided with a collecting pipe 103, and the cleaned sewage can be processed through the collecting groove 102 and the collecting pipe 103, the first bearing arm 209 is hinged to the upper side wall of the first bearing arm 209, and the second bearing arm 210 is connected to the upper side wall of the first bearing arm 209, and the third bearing arm 201 is hinged to the upper side wall of the second control bracket 200, and the fourth bearing arm 202 is connected to the upper side wall of the third bearing arm 201;

[0048] The outer circumferences of the second carrying arm 210 and the fourth carrying arm 202 are both provided with a position-adjustable limit frame 211, the limit frame 211 mainly comprises a guide seat 1 212 and a limit clamp 214, the guide seat 1 212 is variably connected to the second carrying arm 210, and the limit clamp 214 is fixedly connected to the lower position of the guide seat 1 212;

[0049] Reference Figure 5 , 7 , 9 and 10, a support frame 300 is arranged between the two supporting arms 209, a guide rod 2 301, a threaded rod 2 302 and a linkage frame 303 are arranged between the support frame 300 and the supporting arm 2 210, a support seat 304 with adjustable position is arranged on the outer circumference of the guide rod 2 301 and the threaded rod 2 302, a nozzle 223 is hinged on the inner edge of the support seat 304, a guide seat 2 305 and an internal threaded seat 306 are arranged above the support seat 304, the guide rod 2 301 and the guide seat 2 305 are in telescopic motion, and the threaded rod 2 302 and the internal threaded seat 306 are in threaded transmission.

[0050] Reference Figure 5 and 9 A guide rod 1 203 and a threaded rod 1 205 are both provided on the bearing arm 210 and the bearing arm 4 202. A guide channel 204 and a threaded channel 206 are milled on the circumference of the guide seat 1 212. The guide seat 1 212 is telescopically connected to the guide rod 1 203 by means of the guide channel 204. The guide seat 1 212 is threadedly transmitted with the threaded rod 1 205 by means of the threaded channel 206. The input end of the threaded rod 1 205 is connected to a motor 207, wherein the motor 207 drives the threaded rod 1 205 to operate.

[0051] When cleaning the single crystal silicon wafer, the carrying arm 1 209 and the control support 2 200 are controlled to rotate. At this time, the single crystal silicon wafer can be placed on the carrying support 2 225, and then the carrying arm 1 209 and the control support 2 200 are controlled to reset. At this time, the control motor 207, under the action of the threaded rod 1 205 and the threaded channel 206, makes the limit frame 211 move toward the axis of the carrying support 2 225. At this time, the two limit clamps 214 can limit the single crystal silicon wafer. It should be noted that when the single crystal silicon wafer is placed (that is, after a single operation is completed), the limit frame 211 will stay at a position close to the control support 1 208 and the control support 2 200, which can prevent the carrying arm 1 209 and the components on the carrying arm 2 210 from causing movement obstacles to the single crystal silicon wafer. The position of the limit clamp 214 can be changed by changing the position of the guide seat 1 212 on the carrying arm 210, so as to adapt to single crystal silicon wafers of different specifications.

[0052] Example 2

[0053] Reference Figure 4 and 8 FIG. 2 is a second embodiment of the present invention, which is different from the previous embodiment in that: a transmission sheet 221 is fixedly connected to the inner edge of the support seat 304, a transmission wheel 224 is hingedly connected to the upper position of the nozzle 223, the transmission sheet 221 and the transmission wheel 224 are engaged and linked, and a linkage shaft 222 is connected to the side of the transmission wheel 224, and the linkage shaft 222 is located at an eccentric position of the transmission wheel 224;

[0054] The peripheral surface of the support seat 304 is milled with a channel 309, and a linkage plate 310 is provided in the channel 309 for telescopic movement. The lower end of the linkage plate 310 is hingedly connected to the outer peripheral surface of the linkage shaft 222 with a linkage rod 311. When the linkage plate 310 undergoes telescopic movement, under the action of the linkage rod 311 and the linkage shaft 222, the transmission wheel 224 can be linked to rotate, and the transmission wheel 224 is engaged with the transmission sheet 221. At this time, the nozzle 223 can rotate, and the surface of the single crystal silicon can be cleaned in two different forms, namely, straight flushing and oblique flushing. The side of the linkage plate 310 is butted There is a synchronous plate 312, and an elastic member 313 is arranged on the back of the synchronous plate 312. The bottom end of the elastic member 313 is in contact with the upper surface of the support seat 304, so that the linkage plate 310 can be reset without being subjected to extrusion force. The bottom of the linkage frame 303 is staggered with protrusions 307 and grooves 308. The protrusions 307 and the grooves 308 are combined into a wave shape. When the support seat 304 changes its position, the linkage plate 310 can alternately contact the corresponding positions of the protrusions 307 and the grooves 308, thereby causing the linkage plate 310 to reciprocate and telescopic motion.

[0055] Reference Figure 5 , 6As shown in , 7 and 9, the inner edge of the limit clamp 214 is in a "C" shape, and the upper wall and the lower wall of the inner edge of the limit clamp 214 are both provided with bearing pieces 215, and the circumference of the upper wall and the lower wall of the inner edge of the limit clamp 214 are both provided with guide channels, and the top surface of the guide seat 212 is provided with a pressurizer 213, wherein the pressurizer 213 is connected to the guide channel through an air pipe, and a guide tube 218 is fixedly connected in the guide channel, and a linkage block 217 is telescopically moved in the guide tube 218, and a bearing seat 220 is arranged in the guide channel, and an elastic member 219 is arranged between the sides of the bearing seat 220 and the linkage block 217 facing each other, and the two ends of the elastic member 219 are respectively fixedly connected to the circumference of the bearing seat 220 and the linkage block 217, and the sides of the two bearing pieces 215 facing each other are provided with a flexible pad 216, and the flexible pad 216 is located at the center of the bearing piece 215;

[0056] Under the influence of the shape of the limiting clamp 214, the corners of the single crystal silicon wafer are in the limiting clamp 214, and the guide channel is aired through the air pipe of the pressurizer 213. At this time, Pa in the guide channel increases, and the linkage block 217 will be pushed out of the guide channel. At this time, the two supporting plates 215 move toward each other, one of which can limit the single crystal silicon wafer, and the other can reduce the impact when the single crystal silicon wafer is flushed.

[0057] Example 3

[0058] refer to Figure 1 , 2 3 is a third embodiment of the present invention, wherein a telescopic rod 229 is hingedly connected to the carrier 100, and the running end of the telescopic rod 229 is butted against the back of the carrier 225, and a bearing plate 227 is arranged on the upper peripheral wall of the carrier 225, and a plurality of flow channels 228 are provided on the upper peripheral surface of the bearing plate 227, and a pumping device 226 is arranged at the eccentric position of the back of the carrier 225, and a bearing frame 104 is mounted on the back of the carrier 100, and one end of the bearing frame 104 is butted against Motor 105, the running end of motor 105 is connected to the bottom surface of telescopic rod 229. When the limiting clamp 214 limits the single crystal silicon wafer, the supporting plate 227 is fitted with the back of the single crystal silicon wafer through the telescopic rod 229. The pump 226 works. Under the action of pressure, the supporting plate 227 is sucked onto the back of the single crystal silicon wafer. At this time, when motor 105 is running, it can link the telescopic rod 229 and the single crystal silicon wafer to rotate, and the single crystal silicon wafer can be fully cleaned.

[0059] Example 4

[0060] A method for cleaning a single crystal silicon wafer comprises the following steps: S1, first preparing a bucket of sodium hydroxide solution, with the concentration set to 0.1M, such concentration can effectively remove inorganic pollutants on the surface, while avoiding damage to the silicon wafer caused by excessive alkalinity; S2, heating the solution to about 60°C, such temperature can accelerate the chemical reaction between the solution and the pollutants, making the cleaning process more efficient; S3, slowly immersing the silicon wafer in the heated sodium hydroxide solution, so that the surface of the silicon wafer is completely in contact with the solution, and the immersion time is maintained at about 15 minutes, during which the silicon wafer can be gently shaken to ensure that the solution and the surface pollutants are fully in contact and react; S4, after cleaning, taking the silicon wafer out of the solution, and placing the single crystal silicon wafer on a support 225, wherein the nozzle 223 is externally connected to a deionized water pipe, and the nozzle 223 is reciprocatingly telescopically moved, and swung during the movement, to remove the residual alkaline components on the single crystal silicon wafer, so as to prevent the latter from causing subsequent damage to the silicon wafer.

[0061] It will be appreciated that in the development of any actual implementation, as in any engineering or design project, numerous implementation-specific decisions may be made. Such a development effort may be complex and time-consuming, but will be a routine task of design, fabrication, and production for those of ordinary skill having the benefit of this disclosure without undue experimentation.

[0062] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A single crystal silicon wafer cleaning device, characterized in that: It includes a first bearing support (100), a second control support (200), a first control support (208) and a second bearing support (225); The bearing support 2 (225) is hinged at a position directly above the bearing support 1 (100); the control support 1 (208) and the control support 2 (200) are respectively located at two end points of the periphery of the bearing support 1 (100); a bearing column (101) is welded to the back of the bearing support 1 (100); a bearing arm 3 (201) is hinged directly above the control support 2 (200); a bearing arm 4 (202) is butt-jointed to the upper side wall of the bearing arm 3 (201); a bearing arm 1 (209) is hinged directly above the control support 1 (208); and a bearing arm 2 (210) is butt-jointed to the upper side wall of the bearing arm 1 (209); The outer circumferences of the bearing arm 2 (210) and the bearing arm 4 (202) are both provided with a position-adjustable limit frame (211), the limit frame (211) comprising a guide seat 1 (212) and a limit clamp (214), the guide seat 1 (212) being variably connected to the bearing arm 2 (210), and the limit clamp (214) being fixedly connected to a position below the guide seat 1 (212); A support frame (300) is arranged between the two first bearing arms (209); a second guide rod (301), a second threaded rod (302) and a linkage frame (303) are arranged between the support frame (300) and the second bearing arm (210); a positionally variable support seat (304) is arranged on the outer circumference of the second guide rod (301) and the second threaded rod (302); a nozzle (223) is hingedly connected to the inner edge of the support seat (304); a second guide seat (305) and an internal threaded seat (306) are arranged above the support seat (304); the second guide rod (301) and the second guide seat (305) are telescopically movable; and the second threaded rod (302) and the internal threaded seat (306) are threadedly driven; A transmission sheet (221) is fixedly connected to the inner edge of the support seat (304); a transmission wheel (224) is hingedly connected to the upper position of the nozzle (223); the inner edge of the transmission sheet (221) and the outer edge of the transmission wheel (224) are both provided with tooth patterns; the transmission sheet (221) and the transmission wheel (224) are meshed and linked; a linkage shaft (222) is butted against the side of the transmission wheel (224); and the linkage shaft (222) is located at an eccentric position of the transmission wheel (224); The inner edge of the limiting clamp (214) is in a "C" shape, and the upper wall and the lower wall of the inner edge of the limiting clamp (214) are both provided with a bearing sheet (215), and the upper wall and the lower wall circumference of the inner edge of the limiting clamp (214) are both provided with a guide channel, and the top surface of the guide seat (212) is provided with a pressurizer (213), wherein the pressurizer (213) is connected to the guide channel through an air pipe.

2. The single crystal silicon wafer cleaning device according to claim 1, characterized in that: A collection groove (102) is milled on the upper surface of the carrier tray (100), and a collection pipe (103) is arranged around the carrier tray (100). Cleaned sewage can be processed through the collection groove (102) and the collection pipe (103).

3. The single crystal silicon wafer cleaning device according to claim 1, characterized in that: The bearing arm 2 (210) and the bearing arm 4 (202) are both provided with a guide rod 1 (203) and a threaded rod 1 (205); the peripheral surface of the guide seat 1 (212) is milled with a guide channel (204) and a threaded channel (206); the guide seat 1 (212) is telescopically connected to the guide rod 1 (203) by means of the guide channel (204); the guide seat 1 (212) is threadedly driven with the threaded rod 1 (205) by means of the threaded channel (206); and the input end of the threaded rod 1 (205) is connected to a motor 2 (207).

4. The single crystal silicon wafer cleaning device according to claim 1, characterized in that: The peripheral surface of the support seat (304) is milled with a channel 1 (309), and a linkage plate (310) is provided in the channel 1 (309) for telescopic movement. The lower end of the linkage plate (310) is hingedly connected to the outer peripheral surface of the linkage shaft (222) by a linkage rod (311), and the side of the linkage plate (310) is butt-jointed with a synchronization plate (312).

5. The single crystal silicon wafer cleaning device according to claim 4, characterized in that: The back of the synchronization plate (312) is provided with a second elastic member (313), the bottom end of the second elastic member (313) is in contact with the upper surface of the support seat (304), and the bottom of the linkage frame (303) is staggered with protrusions (307) and grooves (308), and the protrusions (307) and the grooves (308) are combined into a wave shape.

6. The single crystal silicon wafer cleaning equipment according to claim 1, characterized in that: A guide tube (218) is fixedly connected in the guide channel, a linkage block (217) is telescopically movable in the guide tube (218), a bearing seat (220) is arranged in the guide channel, an elastic member (219) is arranged between the mutually facing surfaces of the bearing seat (220) and the linkage block (217), two ends of the elastic member (219) are respectively fixedly connected to the bearing seat (220) and the circumferential surface of the linkage block (217), and a flexible pad (216) is arranged on the mutually facing surfaces of the two bearing sheets (215), and the flexible pad (216) is located at the center of the bearing sheet (215).

7. The single crystal silicon wafer cleaning device according to claim 1, characterized in that: A telescopic rod (229) is hinged in the support tray 1 (100), and the running end of the telescopic rod (229) is connected to the back of the support tray 2 (225). The upper peripheral wall of the support tray 2 (225) is provided with a support plate (227), and a number of flow channels (228) are opened on the upper peripheral surface of the support plate (227). A pump (226) is arranged at the eccentric position of the back of the support tray 2 (225). The back of the support tray 1 (100) is equipped with a support frame (104), and one end of the support frame (104) is connected to the motor 1 (105), and the running end of the motor 1 (105) is connected to the bottom surface of the telescopic rod (229).

8. A method for cleaning a single crystal silicon wafer, which is implemented based on the single crystal silicon wafer cleaning device according to any one of claims 1 to 7, characterized in that: The following steps are involved: S1. First, prepare a bucket of sodium hydroxide solution with a concentration of 0.1 M. This concentration can effectively remove inorganic pollutants on the surface while preventing excessive alkalinity from damaging the silicon wafer. S2. Heat the solution to 60°C. This temperature can accelerate the chemical reaction between the solution and the pollutants, making the cleaning process more efficient. S3, slowly immerse the silicon wafer in the heated sodium hydroxide solution so that the surface of the silicon wafer is completely in contact with the solution, and keep the immersion time at 15 minutes. During this period, the silicon wafer can be shaken to ensure that the solution is fully in contact with the surface contaminants and reacts; S4. After cleaning, the silicon wafer is taken out from the solution and the single crystal silicon wafer is placed on the second support (225), wherein the nozzle (223) is externally connected to a deionized water pipe, and the nozzle (223) is reciprocatingly telescopically moved, and swung during movement, to remove the residual alkaline components on the single crystal silicon wafer to prevent the alkaline components from causing subsequent damage to the silicon wafer.

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