Radio frequency units, radio frequency modules and electronic equipment

Abstract

The present application discloses a radio frequency unit, a radio frequency module and an electronic device. In the radio frequency module, a variety of circuit devices are formed on the die, and these circuit devices contain multiple metal layers. Each circuit device can be connected through the lines on the metal layer to form functional units such as LB ASM, MHB ASM, etc. Since LB ASM interferes with MHB ASM, LB ASM is an interference source. Therefore, the radio frequency module can be specifically designed in the following way: First, determine the active area of ​​the interference source in the die, and make a top metal layer on the active area. Furthermore, metal holes are set on the middle metal layer between the active area and the top metal layer. Specifically, metal holes can be set at corresponding positions on the middle metal layer along the periphery of the active area, so as to achieve complete connection between the top metal layer and the middle metal layer, and then cover a layer of metal shielding layer around the active area.

Description

Technical Field

[0001] The present application relates to the field of terminals, and in particular to a radio frequency unit, a radio frequency module and an electronic device. Background Art

[0002] Electronic devices are supporting an increasing number of communication modes and frequency bands. Consequently, the RF transceiver circuits within these devices' RF modules are becoming increasingly complex, and the number of functional units (cells) within these circuits is also increasing. To meet the demand for miniaturization, RF modules must be increasingly integrated. For example, the spacing between different functional units within an RF module must be increasingly tight. This can lead to interference between these units through cross-coupling, which can seriously impact RF module performance. Summary of the Invention

[0003] The present application discloses a radio frequency unit, a radio frequency module, and an electronic device. In the radio frequency module or radio frequency unit, the active area of ​​the interference source in the die is determined, and a top metal layer is formed on the active area. Furthermore, metal holes are provided on the intermediate metal layer between the active area and the top metal layer. Specifically, metal holes can be provided at corresponding positions on the intermediate metal layer along the periphery of the active area, thereby achieving a complete connection between the top metal layer and the intermediate metal layer, and then covering a metal shielding layer around the active area.

[0004] In the first aspect, the present application provides a radio frequency unit, which includes: a first functional unit and a second functional unit, the first functional unit being used to process radio frequency signals in a first frequency band, the second functional unit being used to process radio frequency signals in a second frequency band, and the harmonics of the first frequency band are located within the receiving band of the second frequency band; the first functional unit includes in sequence: a substrate, an intermediate metal layer, and a top metal layer, and a plurality of transistors are arranged on the substrate; the first area in the top metal layer and the intermediate metal layer and the active area are connected by a plurality of metal holes, and the plurality of metal holes are arranged on the periphery of the first area and the periphery of the second area in the intermediate metal layer, the first area and the second area both cover the active area, and the active area is the area on the substrate where the transistors for processing radio frequency signals in the first frequency band are located.

[0005] The RF unit provided in the first aspect can achieve the effect of a metal shield by designing the top and middle metal layers within the RF unit. This eliminates the need for additional isolation walls and allows for microscopic isolation within limited design areas, effectively isolating interference sources and improving the isolation of the RF module.

[0006] In combination with the radio frequency unit described in the first aspect, the first functional unit is a low-frequency band antenna switching switch module LB ASM, and the second functional unit is a mid-frequency band antenna switching switch module MHB ASM; or, the first functional unit is a low-frequency band power amplifier LB PA, and the second functional unit is a mid-frequency band power amplifier MB PA or a high-frequency band power amplifier HBPA; or, the first functional unit is a low-frequency band low-noise amplifier LB LNA, and the second functional unit is a mid-frequency band power amplifier MHB LNA.

[0007] In this way, the interference sources of various radio frequency units can be shielded to avoid interference in all directions.

[0008] With reference to the radio frequency unit described in the first aspect, the first frequency band is B8, and the second frequency band is B3 and / or B7.

[0009] In this way, in the scenario where the radio frequency unit supports B8 and performs carrier aggregation with B3 and / or B7, the second harmonic of the B8 frequency band can be effectively avoided from falling within the receiving band of the B3 frequency band, and will not cause interference with the signal reception of the auxiliary carrier component of the secondary cell; and the third harmonic of the B8 frequency band can be effectively avoided from falling within the receiving band of the B7 frequency band, and will not cause interference with the signal reception of the auxiliary carrier component of the secondary cell.

[0010] In combination with the radio frequency unit described in the first aspect, a distance between the first functional unit and the second functional unit is smaller than a threshold.

[0011] In this way, while ensuring that the interference source is effectively isolated, the first functional unit containing the interference source and the second functional unit affected by the interference can be designed closely, thereby improving the integration of the radio frequency unit and saving design area.

[0012] In combination with the radio frequency unit described in the first aspect, the first functional unit and the second functional unit are both designed on the same wafer Die.

[0013] In this way, while ensuring that the interference source is effectively isolated, the first functional unit containing the interference source and the interfered second functional unit can be designed closely, for example, by die design, to further improve the integration of the radio frequency unit and save design area.

[0014] In combination with the radio frequency unit described in the first aspect, the multiple metal holes include signal line through holes and power line through holes in the radio frequency unit.

[0015] In this way, the metal holes used to form the metal shielding cover can be the existing signal line through holes and power line through holes in the reused radio frequency unit, saving design costs.

[0016] In combination with the radio frequency unit described in the first aspect, the intermediate metal layer is further used to connect the transistor to achieve the first function.

[0017] In this way, the metal layer used to form the metal shield can be the existing metal layer in the reused radio frequency unit, saving design costs.

[0018] In combination with the RF unit described in the first aspect, the top metal layer is also used to set a first ground pin and a signal pin. The first ground pin is used to single-point ground the circuit of the first frequency band, the second ground pin is used to ground the circuit other than the circuit of the first frequency band, and the signal pin is used to transmit the RF signal of the first frequency band.

[0019] In this way, grounding the interference source at a single point can reduce the problem of interference generated by the interference source through the ground line and further improve the isolation of the radio frequency unit.

[0020] In combination with the radio frequency unit described in the first aspect, the first functional unit is further configured to process radio frequency signals in a third frequency band.

[0021] In a second aspect, the present application provides a radio frequency module, which includes a first radio frequency unit, which is used to control the antenna of the first frequency band or the antenna switch of the second frequency band. The first radio frequency unit is such as the radio frequency unit described in any one of the first aspects.

[0022] In combination with the RF module described in the second aspect, the RF module also includes a second RF unit, which is used to amplify the transmission signals of the first frequency band and the second frequency band. The second RF unit is such as the RF unit described in any one of the first aspects.

[0023] In combination with the RF module described in the second aspect, the RF module also includes a third RF unit, which is used to amplify the received signals of the first frequency band and the second frequency band. The third RF unit is such as the RF unit described in any one of the first aspects.

[0024] In a third aspect, the present application provides a chip system, which includes a radio frequency unit, and the radio frequency unit is as described in any one of the first aspects.

[0025] In a fourth aspect, the present application provides an electronic device, comprising one or more radio frequency units, one or more memories, and one or more processors; the radio frequency unit is such as the radio frequency unit described in any one of the first aspects; the memory is coupled to the one or more processors, the memory being used to store computer program code, the computer program code comprising computer instructions, the one or more processors calling the computer instructions to enable the electronic device to process radio frequency signals through the radio frequency unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic diagram of an application scenario of a radio frequency module provided in an embodiment of the present application;

[0027] Figure 2 A schematic diagram of the design structure of a radio frequency module provided in an embodiment of the present application;

[0028] Figure 3 A schematic diagram of the circuit structure corresponding to the interference source in the radio frequency unit provided in an embodiment of the present application;

[0029] Figure 4 A schematic diagram of the shielding cover structure of an interference source in a radio frequency unit provided in an embodiment of the present application;

[0030] Figure 5 A schematic diagram of the top metal layer structure in a radio frequency module provided in an embodiment of the present application;

[0031] Figure 6 The manufacturing process of the top shielding cover corresponding to the interference source in the radio frequency module provided in the embodiment of the present application;

[0032] Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0033] The following is a clear and detailed description of the technical solutions in the embodiments of the present application, with reference to the accompanying drawings. In the description of the embodiments of the present application, unless otherwise specified, " / " represents the meaning of "or." For example, A / B can represent A or B. "and / or" in the text is merely a description of the association relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone.

[0034] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to imply or suggest relative importance or implicitly indicate the number of the technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of this application, unless otherwise specified, "plurality" means two or more.

[0035] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0036] The term "user interface (UI)" in the following embodiments of this application refers to a medium interface for interaction and information exchange between an application or operating system and a user, which realizes the conversion between the internal form of information and the form acceptable to the user. The user interface is a source code written in a specific computer language such as Java and extensible markup language (XML). The interface source code is parsed and rendered on an electronic device and finally presented as content that the user can recognize. The commonly used form of user interface is graphical user interface (GUI), which refers to a user interface related to computer operations that is displayed in a graphical manner. It can be a visual interface element such as text, icons, buttons, menus, tabs, text boxes, dialog boxes, status bars, navigation bars, widgets, etc. displayed on the display screen of an electronic device.

[0037] First, the relevant concepts involved in this application are introduced.

[0038] A chip is formed by packaging one or more dies, each containing one or more functional units. Typically, to design a smaller chip, the distance between dies can be shortened, or multiple functional units can be combined into a single die.

[0039] A radio frequency module refers to a chip that contains a radio frequency integrated circuit. The radio frequency module is an important component of electronic equipment for realizing mobile communication functions and wireless communication functions.

[0040] refer to Figure 1 , Figure 1 A schematic diagram of an application scenario of a radio frequency module is shown as an example.

[0041] like Figure 1 As shown, the RF module can be coupled with the baseband processing unit, antenna, etc., thereby providing the electronic device with mobile communication functions such as 2G / 3G / 4G / 5G. Figure 1 In addition to the application scenarios shown, the RF module can also be coupled with a wireless local area network (WLAN) processing unit, antenna, etc. to provide wireless communication functions such as WLAN for electronic devices. Figure 1 As shown in the figure, the embodiments of the present application do not limit the specific application scenarios of the radio frequency module.

[0042] Continue to read Figure 1As shown, the RF module includes but is not limited to: antenna switch module (ASM) type functional units, power amplifier (PA) type functional units, and low noise amplifier (LNA) type functional units.

[0043] For example, the ASM may include a low-band (LB) switch module, referred to as an LB ASM, which can be used to connect to an LB antenna. The ASM may also include a middle-high-band (MHB) switch, referred to as an MHBASM, which can be used to connect to an MHB antenna.

[0044] For example, the PA may include an LB PA, which can be used to amplify low-frequency RF signals in the transmit channel. The PA may also include an MB PA and an HB PA, which can be used to amplify mid- and high-frequency RF signals in the transmit channel.

[0045] Exemplarily, the LNA may specifically include a LMHB LNA, which may be used to amplify radio frequency signals in a receiving channel and reduce noise.

[0046] The LB mentioned above may include any one or more frequency bands of B5, B8, B12, B26, and B28, the MB may include any one or more frequency bands of B1, B3, B34, and B39, and the HB may include any one or more frequency bands of B40, B41, and B7. The embodiment of the present application does not limit the frequency bands supported by each functional unit, wherein some frequency bands may have a harmonic combination relationship. For example, if the second harmonic or third harmonic of the LB falls into the MB or HB, the LB will interfere with the MB or HB.

[0047] In the embodiment of the present application, the size, position and number of the above-mentioned functional units included in the radio frequency module are not affected by Figure 1 The limitations shown are as follows, that is, the RF module may also include more or fewer functional units. For example, the LMHB LNA may be further divided into the LB LNA and the MHB LNA. These functional units may be arranged in the same or different dies, and the distance between these dies may be closer or farther. Figure 1 It should not be construed as limiting this application.

[0048] Continue to refer Figure 1 As shown, in order to reduce the area of ​​the RF module, the Figure 1The different functional units shown in the figure are combined and designed into the same die. For example, the LB ASM and the LMHBPA can be combined and designed into the same die 1, the LB PA and the MHBPA can be combined and designed into another die 2, and the LMHB LNA can be designed separately into another die 3. Die 1 can also be called the first radio frequency unit, Die 2 can also be called the second radio frequency unit, and Die 3 can also be called the third radio frequency unit.

[0049] Based on the above brief introduction to RF modules, we can see that most electronic devices currently support an increasing number of communication modes and frequency bands, resulting in a larger number of functional units such as ASMs, PAs, and LNAs within RF modules. Given the limited design area of ​​RF modules, the only options are to shorten the distance between dies or to combine multiple functional units on the same die (referred to as a combined die design). While this reduces the area of ​​the RF module, cross-coupling between closely spaced functional units can cause interference, which can seriously impact the performance of the RF module.

[0050] Taking a specific example, if the LB ASM and MHB ASM, two functional units used to control channels in different frequency bands, are designed in combination, in a scenario where electronic equipment supports carrier aggregation (CA) of the B8 and B3 bands, CA requires multiple frequency bands to communicate simultaneously, and the RF module needs to support multiple transmit / receive paths between the antenna and the transceiver. The LB ASM in these paths is used to control the operation of the B8 band channel, and the MHB ASM is used to control the operation of the B3 band channel. The B8 band serves as the primary carrier component of the primary cell, and the B3 band serves as the secondary carrier component of the secondary cell. The second harmonic of the B8 band will fall within the receiving band of the B3 band, which will cause interference with the signal reception of the secondary carrier component of the secondary cell.

[0051] Taking another specific example, if the LB ASM and MHB ASM, two functional units used to control channels in different frequency bands, are designed together, in a scenario where electronic equipment supports CA of the B8 and B7 bands, implementing CA requires simultaneous communication in multiple frequency bands. The RF module needs to support multiple transmit / receive paths between the antenna and transceiver. The LB ASM in these paths is used to control the operation of the B8 band channel, and the MHB ASM is used to control the operation of the B7 band channel. The B8 band serves as the primary carrier component of the primary cell, and the B7 band serves as the secondary carrier component of the secondary cell. The third harmonic of the B8 band will fall within the receiving band of the B3 band, which will cause interference with the signal reception of the secondary carrier component of the secondary cell.

[0052] In addition, in the RF module, interference may also occur when the design spacing between other functional units such as PA is too small. We will not go into details here.

[0053] In order to solve the above problems, we can Figure 2 Any one or more of the design structures of the RF module shown can be used to improve the isolation between different functional units, thereby avoiding affecting the performance of the RF module due to shrinking the RF module.

[0054] (1) Add a separation wall. For details, refer to Figure 2 As shown, isolation walls are added between Die1, Die2 and Die3. The isolation walls can also be called isolation lines, isolation fences, etc., which can be used to isolate each Die, thereby reducing interference between each Die.

[0055] Since isolation walls are made of insulating materials such as metal and are used to isolate interference sources from interfered sources, the method of adding isolation walls can only be implemented from a macro perspective, that is, isolation walls can only be set up between each Die, and more detailed isolation cannot be achieved. When multiple functional unit devices are set up in a Die, if a functional unit in the Die interferes with another functional unit, the method of setting up isolation walls between Dies cannot be precise enough to isolate each interference source and interfered source in the same Die. In addition, isolation walls will increase the module area and manufacturing costs.

[0056] (2) Place non-RF circuits between RF circuits to increase the distance between RF circuit functional units. Figure 2 As shown, if different functional units are manufactured on the same Die, the non-RF circuit area can be arranged between two RF circuit areas in the Die. Figure 2 As shown in the figure, when the LB ASM and MHB ASM are designed on the same die, the MIPI control area of ​​the control circuit is arranged between the two RF switch areas.

[0057] This method of isolating the active area through non-RF circuits can only be implemented if the die contains non-RF circuits or has a sufficiently large area. Furthermore, when large RF signals couple to some non-RF circuits, the nonlinearities of some components in the non-RF circuits can excite harmonics, causing radiated spurious emissions. Therefore, this method has limited application scenarios and is generally combined with increasing physical distance and leaving some blank areas to achieve effective isolation.

[0058] (3) Optimize the substrate routing to reduce coupling interference between routings. Specifically, after multiple dies are cut from the wafer and soldered to the substrate, the dies need to be connected through routing on the substrate. Therefore, the routing of each functional unit on the substrate can be optimized to reduce coupling between routings and thus improve isolation.

[0059] It can be seen that although the above methods can improve the isolation of RF modules, their isolation capabilities are limited and may also lead to losses in area and cost, which does not meet the needs of the development of module miniaturization technology.

[0060] In order to further solve the above-mentioned problems, the present application provides a radio frequency unit, a radio frequency module and an electronic device. In the radio frequency module, a variety of circuit devices, such as transistors, are formed on the die. These circuit devices contain multiple metal layers. Each circuit device can be connected through the lines on the metal layer to realize the corresponding functional units, such as LB ASM, MHB ASM and other functional units. Since the LB ASM will interfere with the MHB ASM, the LB ASM is an interference source in the die. For the die including the interference source, it can be designed in the following way: first, determine the interference source in the die, and keep the top metal layer above the interference source intact. Furthermore, a metal hole is set on the middle metal layer between the interference source and the top metal layer. Specifically, a metal hole can be set at the corresponding position on the middle metal layer along the periphery of the interference source, so as to realize the connection between the top metal layer and the middle metal layer, and then cover a layer of metal shielding layer around the interference source.

[0061] By implementing the method provided in this application, the existing components of the RF module, namely the top metal layer and the middle metal layer, can be redesigned to achieve the effect of a metal shield. This eliminates the need for additional isolation walls and allows for microscopic isolation within a limited design area, effectively isolating interference sources and improving the isolation of the RF module.

[0062] In further embodiments, after the interference source is identified, the method described in this application for designing a top metal shield can be precisely applied to only the active area within the interference source. This eliminates the need to reserve a large area of ​​the top metal layer while ensuring interference shielding, facilitating other design options for the top metal layer to achieve other functions of the RF module.

[0063] In a further embodiment, the metal holes used to connect different metal layers in the present application can also be reused through-holes in the RF module for realizing the following functions: signal line through-holes (regular vias) and power line through-holes (powervias). The present application does not limit the specific type of through-holes connecting the intermediate metal layers, as long as they can realize the connection of different metal layers through metal materials. In this way, by reusing through-holes for other purposes in the RF module, it is possible to save costs, improve integration and reduce design area.

[0064] In further implementations, the interference sources described in this application can include not only the LB ASM in the RF module but also other functional units or regions within those functional units. For example, when the LB PA and MHB PA are designed in a die configuration, and in a CA scenario, the LB PA also constitutes an interference source. In short, the methods provided in this application can be applied to any interference source. The embodiments of this application will be described below using the LB ASM as an example interference source. This allows for comprehensive shielding of all interference sources within the RF module.

[0065] In a further embodiment, the ground bump of the interference source can be grounded at a single point. Specifically, for example, the ground bump of the LB ASM can be grounded at a single point. This can reduce the problem of interference generated by the ground line and further improve the isolation of the RF module.

[0066] Based on the previous introduction, in application scenarios where the RF module supports multiple communication frequency bands, such as supporting B8 and B3, the LB ASM used to control B8 will interfere with the MHB ASM controlling B3. Therefore, the interference source is the LB ASM, specifically the active area of ​​B8 in the LB ASM.

[0067] Next, combine Figure 3-Figure 4 Specifically, the active area used to control the B8 frequency band in the LB ASM is used as an interference source to describe the RF unit, RF module, and electronic device provided in this application. If the LB ASM also supports frequency bands other than B8, such as B5, B26, or B28, and if these frequency bands interfere with other frequency bands, these frequency bands are also considered interference sources. The method described later in this article to shield B8 from interference can also be used to design the RF unit.

[0068] Figure 3 The following is a schematic diagram showing the circuit structure corresponding to the interference source in the radio frequency unit.

[0069] like Figure 3As shown in FIG, this circuit is the partial circuit structure corresponding to the LB ASM in the radio frequency unit, including the switch control circuit of B8, and the switch circuits of B26 and B28, etc. Among them, the switch control circuit of B8 is an interference source.

[0070] Figure 3 The circuit structure shown is only an example. The circuit corresponding to the LB ASM in the radio frequency unit may also include more or fewer circuit components, which should not constitute a limitation to the present application.

[0071] Figure 4 The schematic diagram of the shielding cover structure of the interference source in the radio frequency ternary is shown as an example.

[0072] Figure 4 (a) in the figure shows the top-view structure of the top shielding cover corresponding to the interference source in the RF unit. Specifically, the LB ASM and MHB ASM in the RF unit can be jointly manufactured on Die1 through a combined Die design. In order to preliminarily isolate the LB ASM and the MHB ASM, the passive control area, namely the MIPI, can be set between the LB ASM and the MHB ASM. Assuming that the interference source in the RF unit is the active area of ​​B8 in the LB ASM, the other areas are the active areas of other frequency bands of the LB ASM, the MIPI control area, and the active areas of other frequency bands of the MHB ASM.

[0073] Combine Figure 4 As shown in (a), the semiconductor process is used above the active area of ​​B8 to achieve the following: the top metal layer above B8 is completely retained, and then the top metal layer and the middle metal layer are connected through metal holes. These metal holes are located at corresponding positions on the metal layer along the periphery of the active area, thus forming a structure similar to a shielding cover. It can be understood that the middle metal hole is not visible in the top view structure (indicated by dotted lines), but the top pins can be seen (indicated by solid lines). In addition, the top pins can be used specifically for grounding and signal connection, so they can be divided into top metal layer grounding pins and top metal layer signal pins. Regarding the design methods of various pins in the top metal layer, please refer to the following description. Figure 5 The description of is omitted here.

[0074] Figure 4 (b) shows the side view of the top shielding cover corresponding to the interference source in the RF unit. Specifically, the LB ASM, MHB ASM, PA, and LNA functional units in the RF unit are all packaged on the substrate.

[0075] Among them, the LB ASM includes the B8 active area and active areas of other frequency bands. Multiple metal layers are arranged above the B8 active area, such as two intermediate metal layers, Metal layer1 and Metal layer2, and Metal layer3, which is the top metal layer. The corresponding top metal layer above the B8 active area (also known as the first area, the first area covers the active area) is completely retained, and the top metal layer, the intermediate metal layer and the active area are connected through metal holes (the area in the intermediate metal layer used to connect the top metal layer through the metal holes can also be called the second area, the second area covers the active area). These metal holes are located at corresponding positions on the metal layer along the periphery of the active area, so that a structure similar to a shielding cover can be formed. In effect, it is like shielding the interference source inside a three-dimensional shielding cover.

[0076] In the embodiments of this application, Figure 4 In the RF module shown in , Die1 can also be called a RF unit, the LB ASM containing the interference source in the RF unit can also be called a first functional unit, B8 supported by the LB ASM can also be called a RF signal of the first frequency band, and the MHB ASM affected by the interference source can also be called a second functional unit. B3 and / or B7 supported by the MHB ASM can also be called a RF signal of the second frequency band.

[0077] Figure 5 The following is a schematic diagram showing the top metal layer structure corresponding to an interference source in a radio frequency module.

[0078] like Figure 5 As shown, the top metal layer corresponding to the interference source in the RF module can be provided with multiple holes, including signal pins (such as RF port) and ground pins. The ground pins can be divided into the ground pins of the interference source (such as B8GND) and the ground pins of other frequency bands. In this way, the interference source, namely B8, is grounded at a single point, which can also prevent the interference source from interfering with other circuits to a certain extent. The above pins can be brought out by wire bonding or flipped on the substrate using a BUMP.

[0079] above Figure 5 This is only an exemplary introduction. In addition, the ground pins and signal pins can also be placed in areas other than the top metal layer corresponding to the interference source. The embodiments of the present application do not limit this. It is only necessary to ensure that the top metal layer of the interference source is connected to the ground through the ground pin so that the top metal layer maintains zero potential to achieve a shielding effect.

[0080] In the embodiments of the present application, the RF module design method is mainly used to summarize the overall design of the RF module and does not constitute a limitation on the process of the semiconductor involved in the RF module. For a specific process for implementing the RF module design method of the present application, please refer to the following description. Figure 6 The description of is omitted here.

[0081] Figure 6 The following example illustrates the production process of the top shielding cover corresponding to the interference source in the RF module.

[0082] like Figure 6 As shown, the production process includes the following steps:

[0083] S61, on the silicon wafer substrate, fabricate the bottom layer transistors and determine the active area of ​​the interference source.

[0084] Specifically, semiconductor process technology is used to manufacture bottom-layer transistors, such as Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), on a silicon wafer substrate.

[0085] For example, the interference source is the region of a transistor on a silicon wafer substrate used to control B8. The active area of ​​the interference source is the region on the substrate where the transistor is located to process the interference signal. This refers to the area on the silicon wafer where active devices are located, also known as the well region, or an area isolated using isolation technology. Taking a MOSFET as an example, the active area can be divided into the source and drain regions. Therefore, the industry generally refers to the area where ion implantation is subsequently performed as the active area.

[0086] Silicon wafer substrates are widely used in the semiconductor field, specifically for making multiple MOSFETs to create semiconductor chips. During the manufacturing process of semiconductor chips, high-purity silicon is extracted from silicon crystals, which are then processed into silicon wafer substrates. Finally, tiny electronic devices such as transistors are manufactured on the silicon wafer substrates through processes such as chemical vapor deposition, ion implantation, photolithography, and etching, forming integrated circuits. This is not described in detail in the examples of this application.

[0087] S62, a contact hole is formed between the active area and the metal layer 1, and the metal layer 1 is formed above the contact hole. Specifically, a contact hole (e.g., a metal hole) is formed between the active area and the metal layer 1 using semiconductor process technology, and the metal layer 1, also called Metal layer 1, is formed on the contact hole. The metal layer 1 is used to etch the horizontal metal connection line. The metal layer 1 may be disconnected rather than a complete piece. Specifically, the metal layer only needs to be formed in the area where the metal connection line is designed.

[0088] Specifically, the metal holes above the active area include a plurality of metal holes arranged along the periphery of the active area for connecting to the metal layer 1 .

[0089] S63, a contact hole is formed between metal layer 1 and metal layer 2, and metal layer 2 is formed above the contact hole. Specifically, semiconductor process technology is continued to be used to form a contact hole (e.g., a metal hole) between metal layer 1 and metal layer 2, and metal layer 2, also called Metal layer 2, is formed above the contact hole. Metal layer 2 is also used to etch lateral metal connecting lines. Metal layer 2 may be disconnected rather than a complete piece. Specifically, the metal layer only needs to be formed in the area where the metal connecting lines are designed.

[0090] Optionally, during the fabrication of metal interconnects at each layer, the metal holes and metal layers are fabricated simultaneously. For example, a copper process may include etching the areas where the conductors are to be formed, fabricating a barrier layer (etch), fabricating an adhesion layer (PVD), fabricating a seed layer (PVD), electroplating (ECP), and chemical-mechanical polishing (CMP).

[0091] S64, forming a contact hole between the metal layer N-2 and the metal layer N-1, and forming the metal layer N-1 above the contact hole.

[0092] The execution method of S64 is similar to that of S63 , that is, continuing to form a contact hole (eg, a metal hole) for connecting the metal layer and the metal layer.

[0093] In the embodiment of the present application, the number of metal layers depends specifically on the functional units implemented by the Die contained in the RF module to be designed. It is only necessary to meet the signal integrity, power integrity, thermal stability, manufacturability and design flexibility of the functional unit. The embodiment of the present application does not limit the number of metal layers.

[0094] Signal integrity refers to the fact that as the number of metal layers increases, the integrity of signal transmission can be better guaranteed. This is because multiple metal layers can provide more wiring layers, making the signal transmission path more direct and shorter, reducing signal transmission loss and distortion.

[0095] Among them, power integrity means that multi-layer metal can provide more power and ground layers, making power distribution more uniform and stable, and reducing power noise and electromagnetic interference.

[0096] Thermal stability refers to the fact that as the operating frequency and power density of integrated circuits increase, the thermal problems of chips become increasingly prominent. Multi-layer metal can provide more heat dissipation paths, making the chip more thermally stable.

[0097] Manufacturability refers to the fact that multi-layer metal processes can improve the manufacturability of integrated circuits. This is because multi-layer metal processes can provide more wiring layers and vias, allowing for better control of wiring density and complexity, reducing manufacturing difficulty and cost.

[0098] Design flexibility refers to the fact that multi-layer metal can provide more wiring layers and design space, making the design of integrated circuits more flexible and diverse. This helps to meet different application requirements and optimize circuit performance.

[0099] S65 , forming a contact hole between the metal layer N- 1 and the metal layer N, and forming the metal layer N above the contact hole.

[0100] S65 and S63 are similar in execution method, but also have some differences. The similarity is that the same method is used to form the metal hole between metal layer N-1 and metal layer N. The difference is that when forming metal layer N, i.e., the top metal layer, the portion corresponding to the active area must be completely preserved. In other words, the top metal layer corresponding to the active area is a complete piece, so that the top metal layer can completely cover the active area.

[0101] In an embodiment of the present application, completely preserving the top metal area corresponding to the active area includes not performing operations such as etching on the top metal layer corresponding to the active area, or includes only making ground pins and signal pins on the top metal layer corresponding to the active area without performing other etching operations.

[0102] Furthermore, since only horizontal connections without vertical connections are not enough to connect the modules, vias are required between the metal layers to serve as vertical connections, connecting the metal layers and thus realizing the functions of the entire chip. Therefore, the metal holes used to make the top metal shield in this application can also be the necessary vias in the reuse chip manufacturing process.

[0103] S66, covering the metal layer N with a corresponding dielectric (such as SiO2+SiN), and etching the signal pins and ground pins to lead out the pins.

[0104] Specifically, after the top metal layer is completed, in order to protect the top metal layer and prevent it from being affected by water vapor, it is necessary to passivate it by covering it with a dielectric, and then etch holes in the dielectric at the ground pins and signal pins in the metal layer to lead out the pins.

[0105] It can be seen that during the design of the RF module, if the above-mentioned process is used to make a top-level shielding cover for the interference source in the RF module, the top metal layer and the middle metal layer can be completely connected, thereby forming a shielding effect of a metal shielding fence around the active area, ensuring that the interference signal is confined to the maximum extent within the formed shielding cover. In this way, the interference caused by cross-coupling between the various functional units in the RF module will be reduced. For example, the signal of the switch functional unit operating in the B8 frequency band will not cross-couple to the switch functional unit operating in another B3 frequency band, that is, the interference path is blocked, achieving the effect of improving the performance of the interfered circuit.

[0106] Based on the RF module design method and related devices described above, the following details the device form and hardware architecture of the RF module.

[0107] The RF module described in this application can be used in electronic devices including: or portable terminal devices with other operating systems, such as mobile phones, tablet computers, desktop computers, laptop computers, handheld computers, notebook computers, ultra-mobile personal computers (UMPCs), netbooks, as well as cellular phones, personal digital assistants (PDAs), augmented reality (AR) devices, virtual reality (VR) devices, artificial intelligence (AI) devices, wearable devices, in-vehicle devices, smart home devices and / or smart city devices, etc.

[0108] Figure 7 A schematic structural diagram of an electronic device is shown.

[0109] The electronic device may include: a processor 710, a memory 720, a universal serial bus (USB) 730, an antenna 1, an antenna 2, a mobile communication module 740, a wireless communication module 750 and a subscriber identification module (SIM) card interface 760, etc.

[0110] It is understood that the structures illustrated in the embodiments of the present application do not constitute a specific limitation on the electronic device. In other embodiments of the present application, the electronic device may include more or fewer components than shown in the figure, or combine certain components, or split certain components, or arrange the components differently. The illustrated components can be implemented in hardware, software, or a combination of software and hardware. For example, the electronic device may also include an audio module, a sensor module, a button, a motor, an indicator, a camera, and a display screen.

[0111] The processor 710 may include one or more processing units. For example, the processor 710 may include an application processor (AP), a modem processor, a graphics processing unit (GPU), an image signal processor (ISP), a controller, a memory, a video codec, a digital signal processor (DSP), a baseband processor, and / or a neural-network processing unit (NPU). The different processing units may be independent devices or integrated into one or more processors.

[0112] The controller can be the nerve center and command center of the electronic device. The controller can generate operation control signals based on instruction operation codes and timing signals to complete the control of instruction fetching and execution.

[0113] Processor 710 may also include a memory for storing instructions and data. In some embodiments, the memory in processor 710 is a cache memory. This memory can store instructions or data that have just been used or are being recycled by processor 710. If processor 710 needs to use the same instruction or data again, it can directly access the memory. This avoids duplicate accesses, reduces processor 710 latency, and thus improves system efficiency.

[0114] In some embodiments, the processor 710 may include one or more interfaces. The interfaces may include an inter-integrated circuit (I2C) interface, an inter-integrated circuit sound (I2S) interface, a pulse code modulation (PCM) interface, a universal asynchronous receiver / transmitter (UART) interface, a mobile industry processor interface (MIPI), a general-purpose input / output (GPIO) interface, a subscriber identity module (SIM) interface, and / or a universal serial bus (USB) interface.

[0115] USB730 is a bus interface that complies with USB standards and can be a Mini USB port, Micro USB port, or USB Type-C port. USB730 can be used to connect a charger to charge electronic devices and transfer data between electronic devices and peripherals. It can also be used to connect headphones for audio playback. This port can also be used to connect other electronic devices, such as augmented reality devices.

[0116] It is understood that the interface connection relationship between the modules illustrated in the embodiments of the present application is only for illustrative purposes and does not constitute a structural limitation on the electronic device. In other embodiments of the present application, the electronic device may also adopt different interface connection methods from the above embodiments, or a combination of multiple interface connection methods.

[0117] The memory 720 may include one or more random access memories (RAM) and one or more non-volatile memories (NVM).

[0118] Random access memory may include static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM, for example, the fifth generation of DDR SDRAM is generally referred to as DDR5 SDRAM), etc.

[0119] Non-volatile memory may include disk storage devices and flash memory.

[0120] Flash memory can be divided into NOR FLASH, NAND FLASH, 3D NAND FLASH, etc. according to the operating principle; can be divided into single-level cell (SLC), multi-level cell (MLC), triple-level cell (TLC), quad-level cell (QLC), etc. according to the storage cell potential level; can be divided into universal flash storage (UFS), embedded multi media card (eMMC), etc. according to the storage specification.

[0121] The random access memory can be directly read and written by the processor 710, and can be used to store executable programs (such as machine instructions) of the operating system or other running programs, and can also be used to store user and application data.

[0122] The non-volatile memory may also store executable programs and user and application data, etc., and may be loaded into the random access memory in advance for direct reading and writing by the processor 710 .

[0123] The wireless communication function of the electronic device can be implemented through antenna 1, antenna 2, mobile communication module 740, wireless communication module 750, modem processor and baseband processor.

[0124] Antenna 1 and Antenna 2 are used to transmit and receive electromagnetic wave signals. Each antenna in an electronic device can be used to cover a single or multiple communication frequency bands. Different antennas can also be reused to improve antenna utilization. For example, antenna 1 can be reused as a diversity antenna for a wireless local area network. In other embodiments, the antennas can be used in conjunction with a tuning switch.

[0125] The mobile communication module 740 can provide solutions for wireless communications including 2G / 3G / 4G / 5G applied to electronic devices. The mobile communication module 740 may include at least one filter, a switch, a power amplifier, a low noise amplifier (LNA), etc. The mobile communication module 740 can receive electromagnetic waves from the antenna 1, and filter, amplify, and process the received electromagnetic waves, and transmit them to the modulation and demodulation processor for demodulation. The mobile communication module 740 can also amplify the signal modulated by the modulation and demodulation processor, and convert it into electromagnetic waves for radiation through the antenna 1. In some embodiments, at least some of the functional modules of the mobile communication module 740 can be set in the processor 710. In some embodiments, at least some of the functional modules of the mobile communication module 740 can be set in the same device as at least some of the modules of the processor 710. In the embodiment of the present application, the radio frequency module is part of the mobile communication module.

[0126] The modem processor may include a modulator and a demodulator. The modulator is used to modulate the low-frequency baseband signal to be transmitted into a medium-high frequency signal. The demodulator is used to demodulate the received electromagnetic wave signal into a low-frequency baseband signal. The demodulator then transmits the demodulated low-frequency baseband signal to the baseband processor for processing. After being processed by the baseband processor, the low-frequency baseband signal is passed to the application processor. The application processor outputs the sound signal through the audio device or displays the image or video through the display screen. In some embodiments, the modem processor may be an independent device. In other embodiments, the modem processor may be independent of the processor 710 and be set in the same device as the mobile communication module 740 or other functional modules.

[0127] The wireless communication module 750 can provide wireless communication solutions for electronic devices, including wireless local area networks (WLAN) (such as wireless fidelity (Wi-Fi) networks), Bluetooth (BT), global navigation satellite system (GNSS), frequency modulation (FM), near field communication (NFC), infrared technology (IR), etc. The wireless communication module 750 can be one or more devices that integrate at least one communication processing module. The wireless communication module 750 receives electromagnetic waves via the antenna 2, demodulates and filters the electromagnetic wave signals, and sends the processed signals to the processor 710. The wireless communication module 750 can also receive the signal to be sent from the processor 710, frequency modulate it, amplify it, and convert it into electromagnetic waves for radiation through the antenna 2. In the embodiment of the present application, the radio frequency module is part of the wireless communication module 750.

[0128] In some embodiments, antenna 1 of the electronic device is coupled to mobile communication module 740, and antenna 2 is coupled to wireless communication module 750, so that the electronic device can communicate with a network and other devices via wireless communication technologies. The wireless communication technologies may include global system for mobile communications (GSM), general packet radio service (GPRS), code division multiple access (CDMA), wideband code division multiple access (WCDMA), time-division code division multiple access (TD-SCDMA), long term evolution (LTE), BT, GNSS, WLAN, NFC, FM, and / or IR technology. The GNSS may include global positioning system (GPS), global navigation satellite system (GLONASS), Beidou navigation satellite system (BDS), quasi-zenith satellite system (QZSS) and / or satellite-based augmentation system (SBAS).

[0129] The SIM card interface 760 is used to connect a SIM card. The SIM card can be connected to and separated from the electronic device by inserting it into or removing it from the SIM card interface 760. The electronic device can support 1 or N SIM card interfaces, where N is a positive integer greater than 1. The SIM card interface 760 can support Nano SIM cards, Micro SIM cards, SIM cards, and the like. Multiple cards can be inserted into the same SIM card interface 760 at the same time. The types of the multiple cards can be the same or different. The SIM card interface 760 can also be compatible with different types of SIM cards. The SIM card interface 760 can also be compatible with external memory cards. Electronic devices interact with the network through SIM cards to implement functions such as calls and data communications. In some embodiments, the electronic device uses an eSIM, i.e., an embedded SIM card. The eSIM card can be embedded in the electronic device and cannot be separated from the electronic device.

[0130] It should be understood that each step in the above method embodiments provided herein can be implemented by hardware integrated logic circuits in a processor or by software instructions. The method steps disclosed in the embodiments of this application can be directly implemented as being executed by a hardware processor, or by a combination of hardware and software modules in a processor.

[0131] The present application also provides an electronic device, which may include: a memory and a processor, wherein the memory may be used to store a computer program; and the processor may be used to call the computer program in the memory so that the electronic device executes the method in any one of the above embodiments.

[0132] The present application also provides a chip system, which includes at least one radio frequency unit, for implementing the shielding function involved in any of the above embodiments.

[0133] In one possible design, the chip system further includes a memory, which is used to store program instructions and data, and the memory is located inside or outside the processor.

[0134] The chip system can be composed of chips, or can include chips and other discrete devices.

[0135] Optionally, there may be one or more processors in the chip system. The processor may be implemented in hardware or software. When implemented in hardware, the processor may be a logic circuit, an integrated circuit, etc. When implemented in software, the processor may be a general-purpose processor implemented by reading software code stored in a memory.

[0136] Optionally, the memory in the chip system may be one or more. The memory may be integrated with the processor or may be provided separately from the processor, which is not limited in the embodiments of the present application. For example, the memory may be a non-transient processor, such as a read-only memory (ROM), which may be integrated with the processor on the same chip or provided on different chips. The embodiments of the present application do not specifically limit the type of memory or the configuration of the memory and the processor.

[0137] Exemplarily, the chip system can be a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a system on chip (SoC), a central processor unit (CPU), a network processor (NP), a digital signal processor (DSP), a microcontroller unit (MCU), a programmable logic device (PLD) or other integrated chips.

[0138] The present application also provides a computer program product, which includes: a computer program (also referred to as code, or instruction), which, when executed, enables a computer to execute the method executed by the electronic device in any of the above embodiments.

[0139] The present application also provides a computer-readable storage medium storing a computer program (also referred to as code or instruction). When the computer program is executed, the computer executes the method executed by the electronic device in any of the above embodiments.

[0140] The various implementation modes of this application can be combined arbitrarily to achieve different technical effects.

[0141] In the above embodiments, all or part of the embodiments can be implemented by software, hardware, firmware, or any combination thereof. When implemented using software, all or part of the embodiments can be implemented in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in this application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, optical fiber, digital subscriber line) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more available media. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive).

[0142] Those skilled in the art will appreciate that all or part of the process steps in the above-described method embodiments can be implemented by a computer program instructing the relevant hardware. The program can be stored in a computer-readable storage medium, and when executed, the program can include the process steps in the above-described method embodiments. The aforementioned storage medium includes various media capable of storing program code, such as ROM or random access memory (RAM), magnetic disks, or optical disks.

[0143] In short, the above description is only an embodiment of the technical solution of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements, improvements, etc. made based on the disclosure of the present invention should be included in the scope of protection of the present invention.

Claims

1. A radio frequency unit, characterized in that: The radio frequency unit includes: a first functional unit and a second functional unit, the first functional unit is used to process radio frequency signals in the first frequency band and radio frequency signals in the third frequency band, the second functional unit is used to process radio frequency signals in the second frequency band, the first functional unit and the second functional unit are designed on the same wafer Die, the radio frequency signal in the first frequency band is an interference signal, the harmonics of the first frequency band are within the receiving band of the second frequency band, and the third frequency band does not interfere with the first frequency band and the second frequency band; The first functional unit includes, in sequence: a substrate, an intermediate metal layer, and a top metal layer; a plurality of transistors are provided on the substrate, the plurality of transistors are connected via circuits on the intermediate metal layer and the top metal layer; a first ground pin, a second ground pin, and a signal pin are provided on the top metal layer; the first ground pin is used to single-point ground the circuit of the interference signal; the second ground pin is used to ground the circuit of the non-interference signal; the signal pin is used to transmit the radio frequency signal of the first frequency band; the top metal layer is covered with a dielectric, and the dielectric includes openings for leading out the first ground pin, the second ground pin, and the signal pin; The first area in the top metal layer, the middle metal layer and the first active area are connected by multiple metal holes, and the multiple metal holes are arranged on the periphery of the first area and on the periphery of the second area in the middle metal layer. The multiple metal holes include signal line through-holes and power line through-holes. The first area and the second area both cover the first active area, and the first area and the second area do not cover the second active area. The first active area is the area on the substrate where the transistor for processing the radio frequency signal of the first frequency band is located, and the second active area is the area on the substrate where the transistor for processing the radio frequency signal of the third frequency band is located.

2. The radio frequency unit according to claim 1, wherein: The first functional unit is a low-frequency band antenna switching module LB ASM, and the second functional unit is a medium- and high-frequency band antenna switching module MHB ASM; Alternatively, the first functional unit is a low-frequency band power amplifier LB PA, and the second functional unit is a mid-frequency band power amplifier MB PA and / or a high-frequency band power amplifier HB PA; Alternatively, the first functional unit is a low noise amplifier LB LNA for a low frequency band, and the second functional unit is a power amplifier MHB LNA for a medium or high frequency band.

3. The radio frequency unit according to claim 1, wherein: The first frequency band is B8, and the second frequency band is B3 and / or B7.

4. The radio frequency unit according to any one of claims 1 to 3, characterized in that: A distance between the first functional unit and the second functional unit is smaller than a threshold.

5. The radio frequency unit according to any one of claims 1 to 3, characterized in that: The intermediate metal layer is further used to connect the multiple transistors provided on the substrate to achieve a first function.

6. A radio frequency module, characterized in that: The RF module includes a first RF unit, which is used to control the antenna switch of the first frequency band or the antenna switch of the second frequency band. The first RF unit is the RF unit according to any one of claims 1 to 5.

7. The radio frequency module according to claim 6, wherein: The RF module further includes a second RF unit, which is used to amplify transmission signals in the first frequency band and the second frequency band. The second RF unit is the RF unit according to any one of claims 1 to 5.

8. The radio frequency module according to claim 6 or 7, wherein: The RF module further includes a third RF unit, which is used to amplify received signals in the first frequency band and the second frequency band. The third RF unit is the RF unit according to any one of claims 1 to 5.

9. A chip system, characterized in that: The chip system includes a radio frequency unit, and the radio frequency unit is the radio frequency unit according to any one of claims 1 to 5.

10. An electronic device, characterized in that: The electronic device includes one or more radio frequency units, one or more memories, and one or more processors; the radio frequency unit is the radio frequency unit according to any one of claims 1 to 5; the memory is coupled to the one or more processors, the memory is used to store computer program code, the computer program code includes computer instructions, and the one or more processors call the computer instructions to enable the electronic device to process radio frequency signals through the radio frequency unit.

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