Method, device, equipment and storage medium for reducing energy consumption of single crystal furnace

Abstract

The present application discloses a method, device, electronic device and computer-readable storage medium for reducing energy consumption of a single crystal furnace, which belongs to the field of single crystal silicon preparation, and includes: constructing a physical model of a single crystal furnace; according to the physical model, establishing a thermodynamic equation of the single crystal furnace under working conditions, and solving the thermodynamic equation to obtain the thermodynamic distribution of the single crystal furnace under working conditions; according to the thermodynamic distribution, determining the transfer parameters of the energy loss of the single crystal furnace; according to the transfer parameters, determining a target single crystal furnace component among multiple single crystal furnace components, and modifying the target single crystal furnace component to reduce the overall energy consumption of the single crystal furnace. The present invention accurately analyzes the flow of energy loss in the single crystal furnace through the mathematical description and solution of the heat transfer relationship, so as to identify components with obvious energy loss, and then carry out targeted modification. It solves the problem in the prior art that the single crystal furnace components that need to be modified cannot be accurately selected to reduce the energy consumption of the single crystal furnace.

Description

Technical Field

[0001] The present application belongs to the field of single crystal silicon preparation, and specifically relates to a method, device, electronic equipment and computer-readable storage medium for reducing energy consumption of a single crystal furnace. Background Art

[0002] In the field of photovoltaic power generation, the production of monocrystalline silicon mainly adopts the direct-pull method. This mature technology is not only widely used in the photovoltaic industry, but also occupies an important position in the semiconductor industry.

[0003] In the production process of single crystal silicon, due to the closed space and high temperature environment inside the single crystal furnace, it is impossible to directly measure the experimental environment. Therefore, the traditional method of reducing energy consumption relies on engineering experience and reduces energy consumption by experimentally modifying the local thermal field structure inside the single crystal furnace.

[0004] However, this method is blind and cannot accurately select the single crystal furnace components that really need to be modified in order to deterministically reduce the energy consumption of the single crystal furnace. Summary of the invention

[0005] The present application aims to provide a method, device, electronic device and computer-readable storage medium for reducing the energy consumption of a single crystal furnace, at least to solve the problem in the prior art that it is impossible to accurately select the single crystal furnace components that need to be modified to reduce the energy consumption of the single crystal furnace.

[0006] In a first aspect, an embodiment of the present application discloses a method for reducing energy consumption of a single crystal furnace, comprising:

[0007] Constructing a physical model of a single crystal furnace; the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace;

[0008] According to the physical model, a thermodynamic equation of the single crystal furnace under working conditions is established, and the thermodynamic equation is solved to obtain the thermodynamic distribution of the single crystal furnace under working conditions; the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions;

[0009] Determine the transfer parameters of the single crystal furnace loss energy according to the thermodynamic distribution; the transfer parameters are used to characterize the flow mode, flow path and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace;

[0010] According to the transfer parameters, a target single crystal furnace component is determined among a plurality of single crystal furnace components, and the target single crystal furnace component is transformed to reduce the overall energy consumption of the single crystal furnace.

[0011] In a second aspect, the embodiment of the present application further discloses an energy consumption reduction device for a single crystal furnace, comprising:

[0012] A modeling module, used to construct a physical model of the single crystal furnace; the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace;

[0013] A solution module, used to establish a thermodynamic equation of the single crystal furnace under working conditions according to the physical model, and solve the thermodynamic equation to obtain the thermodynamic distribution of the single crystal furnace under working conditions; the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions;

[0014] A path module, used to determine the transfer parameters of the single crystal furnace loss energy according to the thermodynamic distribution; the transfer parameters are used to characterize the flow mode, flow path and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace;

[0015] The transformation module is used to determine a target single crystal furnace component among multiple single crystal furnace components according to the transfer parameters, and transform the target single crystal furnace component to reduce the overall energy consumption of the single crystal furnace.

[0016] In a third aspect, an embodiment of the present application further discloses an electronic device, comprising a processor and a memory, wherein the memory stores programs or instructions that can be run on the processor, and when the program or instructions are executed by the processor, the steps of the method described in the first aspect are implemented.

[0017] In a fourth aspect, an embodiment of the present application further discloses a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the steps of the method described in the first aspect are implemented.

[0018] In summary, in the embodiments of the present application, the single crystal furnace is accurately simulated to understand and predict the behavior of the single crystal furnace under actual working conditions, and then the distribution and flow of heat inside the single crystal furnace are accurately determined by mathematically describing and solving the heat transfer relationship, so as to analyze the flow of energy and identify components with obvious energy loss. Finally, based on the results of the identification, the components are targeted for modification to reduce unnecessary energy loss when the single crystal furnace is working. Therefore, based on the method of the embodiments of the present application, when improving the energy consumption of the single crystal furnace, there is no need to rely on experience to conduct trial modifications to the single crystal furnace, which avoids the blindness of empirical modifications and solves the problem in the prior art that the single crystal furnace components that need to be modified cannot be accurately selected to effectively reduce the energy consumption of the single crystal furnace. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In the attached picture:

[0020] Figure 1 is a flow chart of steps of a method for reducing energy consumption of a single crystal furnace provided in an embodiment of the present application;

[0021] Figure 2 It is a three-dimensional model diagram of a single crystal furnace provided in an embodiment of the present application;

[0022] Figure 3 It is a Sankey diagram of the transfer parameters of the single crystal furnace energy loss provided in the embodiment of the present application;

[0023] Figure 4 is a flowchart of another method for reducing energy consumption of a single crystal furnace provided in an embodiment of the present application;

[0024] Figure 5 It is a grid diagram established according to the geometric structure of the single crystal furnace in the embodiment of the present application;

[0025] Figure 6 is a block diagram of an energy consumption reduction device for a single crystal furnace provided in an embodiment of the present application;

[0026] Figure 7 is a block diagram of an electronic device according to an embodiment of the present application;

[0027] Figure 8 It is a block diagram of an electronic device of another embodiment provided by the embodiments of the present application.

[0028] Among them: 1-furnace wall; 2-insulation layer; 3-guide tube; 4-main heater; 5-silicon melt; 6-heater electrode; 7-exhaust pipe; 8-bottom heater; 9-graphite crucible; 10-water cooling screen; 11-silicon crystal; 12-quartz crucible. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0030] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0031] Figure 1 This embodiment provides a method for reducing energy consumption of a single crystal furnace, which may include the following steps:

[0032] Step 101, constructing a physical model of a single crystal furnace.

[0033] Among them, the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace.

[0034] In some implementations of the present application, in order to characterize the geometric structure and operating parameters of the single crystal furnace in detail, including the size, shape, material properties of the furnace body, and the temperature, pressure and other conditions during operation, it is necessary to construct a physical model of the single crystal furnace, which is the basis of the entire energy consumption reduction method. This physical model will be used to establish and solve the thermodynamic equations in the subsequent steps, as well as to determine the energy consumption transmission parameters.

[0035] For example, to build a physical model of a Czochralski silicon growth furnace, you first need to collect detailed geometric drawings of the furnace. Then, use 3D geometric modeling software to build a model based on the drawings. Figure 2 The three-dimensional model of the furnace is shown in Figure 1. Figure 2 As shown, in the model, the furnace wall 1, insulation layer 2, guide tube 3, main heater 4, silicon melt 5, heater electrode 6, exhaust pipe 7, bottom heater 8, graphite crucible 9, water cooling screen 10, silicon crystal 11 and other structures can be represented in detail. In principle, the more detailed the division of the structure, the more accurate the result calculated by the model. Technical personnel in the field can make fine adjustments to the model according to the actual needs of the industrial production process. The specific requirements are not repeated here. In this way, it can be ensured that the model can accurately reflect all thermal field structures, argon flow areas, melt flow areas and crystal areas inside the single crystal furnace.

[0036] Step 102, based on the physical model, establish a thermodynamic equation of the single crystal furnace under working conditions, and solve the thermodynamic equation to obtain the thermodynamic distribution of the single crystal furnace under working conditions.

[0037] Among them, the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions.

[0038] In some implementations of the present application, based on the previously constructed physical model of the single crystal furnace, the thermodynamic equations of the single crystal furnace under actual working conditions are established. These equations will characterize the heat transfer relationship inside the single crystal furnace, such as processes such as thermal radiation, thermal convection, and thermal conduction. Solving these thermodynamic equations can obtain the thermodynamic states such as temperature distribution, fluid flow, and energy loss of the single crystal furnace under working conditions, providing a theoretical basis for subsequent energy consumption analysis and optimization.

[0039] For example, based on the existing physical model of the CZ-method single crystal silicon growth furnace, the thermodynamic equations can be established using computational fluid dynamics (CFD) software. First, boundary conditions need to be set, such as furnace pressure, argon flow rate, crucible speed, etc., which are key factors affecting heat transfer. Then, the equations can be numerically iterated through the software's built-in solver until certain convergence criteria are met (for example, the maximum residual of the energy equation can be set to less than 0.000001 in advance). Finally, the three-dimensional velocity field and temperature field distribution in the furnace can be obtained. These results will directly reflect the thermodynamic state of the single crystal furnace. Such calculations not only improve the accuracy of the analysis, but also save a lot of experimental costs and time.

[0040] Step 103, determining the transfer parameters of the energy loss of the single crystal furnace according to the thermodynamic distribution.

[0041] The transfer parameter is used to characterize the flow mode, flow path and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace.

[0042] In some implementations of the present application, by using thermodynamic distribution data, the energy flow between the single crystal furnace components can be analyzed to determine the transfer parameters of the energy loss of the single crystal furnace. These parameters include the flow mode, path and flow amount of energy between the components of the single crystal furnace. This step is crucial for identifying the key areas of energy loss because it directly affects the formulation and implementation of subsequent energy consumption reduction measures.

[0043] For example, after obtaining the three-dimensional velocity field and temperature field distribution in the furnace, the energy transfer relationship between the various components in the single crystal furnace can be established through the three-dimensional velocity field and temperature field distribution, such as Figure 3 As shown, the energy transfer relationship between the various components of the single crystal furnace and the loss caused by energy transfer can be displayed in the form of a Sankey diagram. Assume that the transfer diagram between the various components in the single crystal furnace is as follows Figure 3As shown, it means that there is an energy transfer path named Q1 between the furnace wall 1 and the insulation layer 2, an energy transfer path named Q2 between the guide tube 3 and the main heater 4, an energy transfer path named Q3 between the main heater 4 and the insulation layer 2, an energy transfer path named Q4 between the silicon melt 5 and the silicon crystal 11, an energy transfer path named Q5 between the guide tube 3 and the water-cooled shield 10, an energy transfer path named Q6 between the exhaust tube 7 and the insulation layer 2, an energy transfer path named Q7 between the main heater 4 and the bottom heater 8, an energy transfer path named Q8 between the heater electrode 6 and the insulation layer 2, an energy transfer path named Q9 between the main heater 4 and the water-cooled shield 10, an energy transfer path named Q10 between the quartz crucible 12 and the guide tube 3, and an energy transfer path named Q11 between the water-cooled shield 10 and the silicon crystal 11. Assuming that the radiation energy consumption transmission value from the furnace wall 1 to the insulation layer 2 is found to exceed expectations, this may indicate that the energy loss on this path is large. Then this path can be determined as a key subpath of energy consumption transmission. Through further analysis, it was found that by increasing the reflectivity of furnace wall 1 or optimizing the design of the heater, the energy loss on this path can be effectively reduced, thereby reducing the overall energy consumption of the entire single crystal furnace. This analysis method not only helps to accurately identify components and paths with high energy consumption, but also provides a basis for targeted transformation.

[0044] Step 104 , determining a target single crystal furnace component from a plurality of single crystal furnace components according to the transferred parameters, and transforming the target single crystal furnace component to reduce the overall energy consumption of the single crystal furnace.

[0045] In some implementations of the present application, since the energy transfer parameters between the components of the single crystal furnace have been determined, the target single crystal furnace components can be selected based on these parameters so as to be modified, thereby reducing the overall energy consumption of the entire single crystal furnace. The specific selection principle can set specific thresholds based on the energy flow mode, flow path and flow amount in the transfer parameters, so as to select the target single crystal furnace components when the transfer parameters exceed the relevant thresholds, and make corresponding modifications based on the energy flow mode and flow path in the transfer parameters. This step is the key to energy consumption optimization because it directly affects the performance and energy efficiency of the single crystal furnace.

[0046] For example, suppose that analysis shows that the heat conduction energy consumption from the main heater electrode to the water cooling system accounts for a large proportion. Then the main heater electrode can be used as the target component. In order to reduce energy consumption, the following transformation measures can be considered: Optimize electrode materials: select new composite materials, reduce the thermal conductivity of the electrode, reduce the heat conduction loss from the heater to the electrode, or improve electrode design: optimize the shape and structure of the electrode to reduce the heat conduction efficiency and other means, or reduce the contact area between the main heater and other components during heat conduction. Through these transformations, the energy consumption of the main heater electrode can be effectively reduced, which has a positive impact on the energy consumption of the entire single crystal furnace. Similarly, similar analysis and transformation can be performed on other key components to achieve optimal energy consumption.

[0047] In summary, in the embodiments of the present application, the single crystal furnace is accurately simulated to understand and predict the behavior of the single crystal furnace under actual working conditions, and then the distribution and flow of heat inside the single crystal furnace are accurately determined by mathematically describing and solving the heat transfer relationship, so as to analyze the flow of energy and identify components with obvious energy loss. Finally, based on the results of the identification, the components are targeted for modification to reduce unnecessary energy loss when the single crystal furnace is working. Therefore, based on the method of the embodiments of the present application, when improving the energy consumption of the single crystal furnace, there is no need to rely on experience to conduct trial modifications to the single crystal furnace, which avoids the blindness of empirical modifications and solves the problem in the prior art that the single crystal furnace components that need to be modified cannot be accurately selected to effectively reduce the energy consumption of the single crystal furnace.

[0048] Figure 4 Another method for reducing energy consumption of a single crystal furnace provided in the embodiment of the application comprises the following steps:

[0049] Step 201, constructing a physical model of a single crystal furnace.

[0050] Among them, the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace.

[0051] The method shown in this step has been explained in step 101 and will not be repeated here.

[0052] Optionally, the working parameters include the geometric structure of the single crystal furnace and the property parameters of the single crystal furnace components and the reaction raw materials in the single crystal furnace, and the property parameters are used to characterize the physical and chemical properties of the single crystal furnace components and the reaction raw materials under the working conditions of the single crystal furnace; step 201 includes the following sub-steps:

[0053] Sub-step 2011, establishing a geometric model of the single crystal furnace according to the geometric structure.

[0054] Among them, the geometric model is used to characterize the shape structure of each single crystal furnace component and its spatial position in the single crystal furnace.

[0055] In some implementations of the present application, in order to accurately characterize the shape structure of each component inside the single crystal furnace and its spatial position in the entire furnace body, a process of constructing a geometric model of the single crystal furnace is carried out. The establishment of the geometric model is the basis for subsequent thermodynamic analysis and meshing, and it needs to reflect the design details of the single crystal furnace in detail, including but not limited to the size and shape of components such as furnace walls, insulation layers, heat shields, heaters, electrodes, and crucibles.

[0056] For example, when establishing the geometric model of a Czochralski single crystal silicon growth furnace, you can first use 3D modeling software to build a 3D model of the furnace body based on the design drawings of the furnace body. In this model, you can show in detail the cylindrical structure of the graphite crucible, the rod-shaped shape of the heater electrode, and the tubular structure of the gas guide tube, and ensure that their positions in the model are consistent with the actual layout inside the furnace body. Such a geometric model can provide the necessary spatial parameters for subsequent thermodynamic calculations.

[0057] Sub-step 2012, dividing the geometric model into mesh groups according to the property parameters.

[0058] Among them, a grid group contains multiple grids.

[0059] like Figure 5 As shown, in some implementations of the present application, in order to facilitate subsequent numerical stability testing and accurate calculation of physical models, the established single crystal furnace geometric model can be divided into grid groups. In this step, property parameters, such as thermal conductivity, density, viscosity, etc. of the material, will be used to guide the division of the grid. These parameters are crucial to ensure that the grid can accurately capture fluid mechanics and heat transfer phenomena.

[0060] For example, after constructing the geometric model of the Czochralski method single crystal silicon growth furnace, the various parts of the single crystal furnace can be meshed according to the property parameters of the furnace body material. For example, the meshing software can be used to use structured meshes in the silicon melt 5 and silicon crystal 11 areas to improve the calculation accuracy, and unstructured meshes are used in complex structural areas such as the furnace wall 1, insulation layer 2, guide tube 3, main heater 4, heater electrode 6, exhaust pipe 7, bottom heater 8, graphite crucible 9, and water cooling screen 10 to adapt to their shapes. Each grid corresponds to the physical properties of a specific area in the furnace, ensuring that accurate flow and heat transfer results can be obtained in numerical calculations. Such meshing will lay the foundation for numerical iterative calculations of computational fluid dynamics (CFD).

[0061] Sub-step 2013, testing the numerical stability of the divided grid group under the preset model, and obtaining the physical model of the single crystal furnace when the numerical stability meets the preset stability threshold.

[0062] The preset model is used to determine the accuracy of the calculation results of the grid group in the fluid dynamics calculation and the degree of independence between the grid groups.

[0063] In some implementations of the present application, when dividing the grids of various parts in the single crystal furnace, it is also necessary to ensure the numerical stability of the divided grid groups under the preset model, which is an important step to ensure the reliability of the calculation results. Numerical stability is also called grid independence, which means that the accuracy of the calculation results is not affected by the grid division, or the impact value is less than expected. After meeting the preset stability threshold, it can be confirmed that the obtained physical model is accurate and reliable when performing fluid mechanics calculations.

[0064] For example, after completing the meshing of a single crystal furnace, a series of numerical simulations can be performed using computational fluid dynamics (CFD) software. By changing the density of the grid, it can be observed whether the calculation results of the temperature field and velocity field tend to stabilize as the grid is refined. If the results show that even on a finer grid, the changes in the calculation results are within an acceptable error range, then the model can be considered to have good numerical stability. In this way, it can be determined that the established physical model can reliably predict the behavior of the single crystal furnace under actual working conditions.

[0065] Step 202: Establish a thermodynamic equation of the single crystal furnace under working conditions based on the physical model, and solve the thermodynamic equation to obtain the thermodynamic distribution of the single crystal furnace under working conditions.

[0066] Among them, the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions.

[0067] The method shown in this step has been explained in step 102 and will not be repeated here.

[0068] Optionally, step 202 includes the following sub-steps:

[0069] Sub-step 2021, based on the preset crystal pulling process parameters, respectively establish the control equation and boundary condition equation of the single crystal furnace under working conditions.

[0070] In some implementations of the present application, in order to simulate and control the thermodynamic behavior inside the single crystal furnace and ensure that key parameters such as temperature and pressure can be accurately controlled during the growth of silicon crystals, the control equations and boundary condition equations of the single crystal furnace under working conditions can be established according to the preset crystal pulling process parameters. The control equations usually include basic physical laws such as conservation of energy, conservation of mass, and conservation of momentum, while the boundary condition equations describe the interaction between the single crystal furnace and the external environment, such as heat exchange, mass inflow or outflow, etc.

[0071] For example, it is necessary to establish a control equation for a single crystal furnace used to grow single crystal silicon by the Czochralski method. First, the crystal pulling process parameters are collected, including crucible rotation speed, crystal pulling speed, argon flow rate, etc. These parameters can then be used to establish energy conservation equations to describe the process of heat transfer from the heater to the melt, and mass conservation equations to describe the flow of argon in the furnace. Boundary condition equations may include thermal radiation from the furnace wall, heat conduction between the crucible and the melt, and thermal convection on the crystal surface. These equations will be combined to form a complete mathematical model for simulating and controlling the working state of the single crystal furnace.

[0072] In some implementations of the present application, in order to establish the control equations and boundary condition equations of the single crystal furnace under working conditions, the model idealization process is performed according to the following conditions:

[0073] The silicon melt is defined as an incompressible fluid, and the thermophysical parameters of the melt are set as constants; the shielding gas is defined as argon, and the shielding gas is defined as an ideal gas, and a low Mach number is used to approximate the shielding gas; during the calculation process, the absorption of radiation by the gas is not considered, and all radiating surfaces are approximated as gray body surfaces; the Boussinesq approximation is used to calculate the thermal buoyancy.

[0074] Based on the above idealized process, the following control equations and boundary condition equations can be obtained:

[0075] Optionally, the control equation includes a turbulent flow equation considering argon gas and silicon melt, and the turbulent flow equation is in the form of:

[0076]

[0077]

[0078] in, represents velocity, ρ represents density, μ eff represents effective dynamic viscosity, p represents pressure, T represents temperature, T ref Indicates the preset reference temperature, β T Indicates the preset thermal expansion coefficient, In some implementations of the present application, the continuity, momentum conservation and buoyancy effect of the fluid may be considered, and the turbulent flow equation may be used to describe the flow characteristics of argon and silicon melt in the single crystal furnace. For example, the continuity equation ensures the conservation of mass of the fluid, while the momentum equation takes into account factors such as the inertia, pressure gradient, viscosity and buoyancy of the fluid.

[0079] Optionally, the control equation includes a heat transfer control equation considering the fluid and solid regions in the single crystal furnace. The heat transfer control equation is in the form of:

[0080]

[0081]

[0082] Where ρ represents density, C P represents specific heat capacity, represents speed, λ represents thermal conductivity, λ eff represents effective thermal conductivity, T represents temperature, S Q Represents the volume power density of the heater area. In some implementations of the present application, the physical laws of solid and fluid heat conduction, such as Fourier's law, can be considered to determine the continuity equation and momentum equation in fluid dynamics. The heat transfer control equation can comprehensively consider the heat transfer process in the fluid and solid regions, providing a comprehensive description of the heat distribution inside the single crystal furnace.

[0083] Optionally, the control equation includes a balance control equation considering the Marangoni force on the interface between the silicon melt and the argon gas, and the purge shear force of the argon gas on the silicon melt interface. The balance control equation is in the form of:

[0084]

[0085]

[0086]

[0087] in, represents the velocity of the solution in the normal direction, represents the velocity of argon in the normal direction, represents the tangential velocity of the solution, represents the tangential velocity of argon, represents the unit normal vector, represents the unit tangent vector, γ s Represents the temperature coefficient of surface tension; μ eff,m Indicates the effective dynamic viscosity of the solution, μ eff,g represents the effective dynamic viscosity of argon, and T represents the temperature. In some implementations of the present application, physical phenomena at the interface can be considered, including fluid dynamics and thermodynamic effects. Among them, the Marangoni force is the change in surface tension caused by the temperature gradient, and the purge shear force is the effect of the argon flow on the melt interface. The advantage of this set of equilibrium control equations is that they can accurately describe the interaction between the silicon melt and the argon interface.

[0088] Optionally, the control equation includes a latent heat control equation that takes into account the latent heat of crystallization of the silicon crystal at the interface between the silicon melt and the silicon crystal. The form of the latent heat control equation is:

[0089]

[0090] Where ΔH represents the latent heat of crystallization, V g represents the pulling speed of the crystal, represents the unit normal vector, λ represents the thermal conductivity, λ eff represents effective thermal conductivity, T represents temperature, (·) m Indicates that the object of investigation in this item is the solution, (·) c Indicates that the object of investigation of this item is the crystal. In some implementations of the present application, the physical principle of heat transfer during crystal growth can be considered. The advantage of the latent heat control equation is that it can accurately describe the effect of the release of latent heat on the temperature field during the crystallization of silicon crystals. The latent heat of crystallization is the energy released when the crystal changes from liquid to solid, and the pulling rate directly affects the temperature gradient of the crystal growth interface. The consideration of effective thermal conductivity and thermal conductivity enables the equation to accurately simulate the actual heat transfer process.

[0091] Optionally, the control equation includes a regulation control equation for characterizing an incremental proportional integral regulation control process for regulating and controlling the heat source in the single crystal furnace heater area, and the regulation control equation is in the form of:

[0092] S Q,t+1 =S Q,t +k p (ΔT t -ΔT t-1 )+k i ΔT t ,

[0093] Among them, k p represents the proportionality coefficient, k i Indicates the integral coefficient, ΔT t Represents the temperature difference between the triple point and the melting point of silicon at time t, ΔT t-1 represents the temperature difference between the triple point and the melting point of silicon at time t-1, S Q,t+1 represents the volume power density of the heater area at time t+1, S Q,t represents the volume power density of the heater area at time t, and t-1, t, and t+1 represent the three adjacent moments of incremental proportional integral regulation. In some implementations of the present application, since the PI (proportional-integral) control strategy in control theory is used to realize heat source regulation, it can dynamically adjust the heat source of the single crystal furnace heater area to respond to temperature changes, thereby maintaining the temperature stability inside the single crystal furnace. Therefore, it is necessary to introduce the incremental proportional integral regulation control equation. In the regulation process, the proportional coefficient k p Responsible for rapid response to temperature changes, and the integral coefficient k i It is responsible for eliminating steady-state errors.

[0094] The setting of these coefficients is usually based on the dynamic characteristics of the system and the required control performance, and can be obtained through experimental adjustment or calculation.

[0095] Optionally, the boundary condition equation includes a temperature relationship equation that considers temperature conservation between different phases of matter in the single crystal furnace. The temperature relationship equation is in the form of:

[0096] T s1 =T s2 ,

[0097] T s =T f ;

[0098] Among them, q s1 represents the temperature of solid s1, q s2 represents the temperature of solid s2, q s represents the temperature of the solid s, q f represents the temperature of the fluid f. In some implementations of the present application, the temperature conservation principle between interfaces of materials of different phases and different substances may also be considered in the boundary conditions. In a single crystal furnace, the temperature at the interface of materials of different phases must be equal to ensure the continuous transfer of energy and the stability of the crystal growth process.

[0099] Optionally, the boundary condition equation includes a first heat conservation equation that considers heat conservation between different phase substances in the single crystal furnace. The first heat conservation equation is in the form of:

[0100] q s1 =q s2 ,

[0101] q s =q f ;

[0102] Among them, q s1 represents the heat flux density of solid s1, q s2 represents the heat flux density of solid s2, q s represents the heat flux density of solid s, q f represents the heat flux density of fluid f.

[0103] In some implementations of the present application, the temperature conservation principle between interfaces of different substances in the same phase and between interfaces of different phases of the same substance can also be considered in the boundary conditions. In a single crystal furnace, the interfaces of different substances in the same phase and between interfaces of different phases of the same substance must be equal to ensure the continuous transfer of energy and the stability of the crystal growth process.

[0104] Optionally, the boundary condition equation includes a second heat conservation equation that takes into account thermal radiation, including thermal radiation on the argon side of the interface between the argon gas and the solid structure; the second heat conservation equation is in the form of:

[0105] q s =q f +qrad,in ,

[0106]

[0107]

[0108] Among them, q s represents the heat flux density of solid s, q f represents the heat flux density of fluid f, q rad,in The heat flux density, A, represents the incident radiation heat flux k represents the radiation area of ​​the single crystal furnace component k, q rad,in,k The heat flux density of the incident radiation heat flux of the single crystal furnace component k, q rad,out,i represents the heat flux density of the radiation heat flux emitted by single crystal furnace component i, N represents the total number of single crystal furnace components, A j represents the radiation area of ​​single crystal furnace component j, F jk represents the radiation angle coefficient of single crystal furnace component j to single crystal furnace component k, ε j represents the emissivity of single crystal furnace component j, T j represents the temperature of single crystal furnace component j, q rad,in,j The heat flux density representing the incident radiation heat flux of single crystal furnace component j.

[0109] In some implementations of the present application, the radiation heat flux transmission between the components inside the single crystal furnace can also be considered in the boundary conditions, which is crucial for analyzing and optimizing the energy consumption of the single crystal furnace. Through this equation, it is possible to determine which components have a large radiation energy consumption transmission value, so as to carry out targeted transformation to reduce energy consumption.

[0110] In the above-mentioned multiple sets of equations, parameters such as density, effective dynamic viscosity, thermal expansion coefficient, specific heat capacity, effective thermal conductivity, effective dynamic viscosity and temperature coefficient of surface tension can be determined experimentally or obtained from literature to ensure the accuracy of the calculation results.

[0111] The following Tables 1 and 2 provide reference parameters related to the calculation process of the above equations. It should be emphasized that within the concept of the technology disclosed in the present invention, those skilled in the art can make further selections on the relevant parameters according to the selection, adjustment and improvement of the production process:

[0112] Table 1 Physical properties of solid materials

[0113]

[0114] Table 2 Fluid material thermal properties parameters

[0115]

[0116] Sub-step 2022, the heat transfer equation is combined with the boundary condition equation, and the control equation is solved by a numerical method to obtain a solution to the control equation.

[0117] In some implementations of the present application, in order to obtain the solution of the control equation reflecting the working state of the single crystal furnace, it is necessary to combine the heat transfer equation with the boundary condition equation and solve these control equations by numerical methods, and these solutions will characterize the thermodynamic distribution in the furnace. The process of solving the control equations utilizes numerical methods, such as finite element analysis or finite difference method, which are usually used to deal with such complex equations because they can provide accurate simulation of physical processes.

[0118] For example, suppose that in the previous step, heat transfer equations including thermal radiation, thermal convection and thermal conduction, as well as equations describing boundary conditions such as furnace walls, crucibles and crystal surfaces have been established. Then, software that solves numerical methods, such as finite element calculation software, can be used to solve these equations. At this time, the input crystal pulling process parameters, such as argon flow rate, crucible and crystal rotation speed, etc., can be used as boundary conditions. Then, the software will solve the equations through iterative calculations. In this way, the thermodynamic distribution reflecting the actual working state of the single crystal furnace can be obtained, providing a basis for subsequent energy consumption analysis and optimization.

[0119] Sub-step 2023, when the residual of the solution of the control equation is less than a preset residual index threshold, the solution of the equation is determined to be a thermodynamic distribution.

[0120] In some implementations of the present application, it is necessary to ensure that the residual of the solution of the control equation is less than a preset residual index threshold. This step is an important step in verifying and confirming the accuracy of the solution of the equation. The residual refers to the difference between the calculation result and the actual physical behavior. The smaller the residual, the higher the reliability of the calculation result. Only when the residual meets the preset threshold, the solution of the equation is determined as the thermodynamic distribution of the single crystal furnace under working conditions, can the accuracy of the prediction be guaranteed.

[0121] For example, suppose that the control equations of a single crystal furnace are solved using the finite element method, and the distribution solutions of temperature and flow rate are obtained. At this time, the residuals of the energy equation at each grid point can be calculated, and it is ensured that these residuals are less than the preset threshold. For example, the maximum residual of the energy equation can be designed to be less than 0.000001. If the residuals of all grid points meet this condition, it can be confirmed that the obtained temperature and flow rate distributions are accurate, thereby determining that these solutions represent the thermodynamic distribution of the single crystal furnace. Such a thermodynamic distribution will provide important basic data for subsequent energy consumption analysis and optimization.

[0122] Step 203, according to the thermodynamic distribution, calculate the energy consumption transmission value between every two single crystal furnace components in the single crystal furnace, and determine a transmission sub-path between two single crystal furnace components whose energy consumption transmission value is greater than a preset energy consumption transmission index.

[0123] In some implementations of the present application, in order to identify and quantify the specific situation of energy flow between the components inside the single crystal furnace, after obtaining the thermodynamic distribution, the energy consumption transmission value between every two components in the single crystal furnace can be calculated. When the energy consumption transmission value exceeds the preset energy consumption transmission index, this indicates that the energy loss between the two components is large and requires special attention. At this time, a transmission sub-path can be determined between the two components to facilitate subsequent energy consumption optimization work.

[0124] For example, suppose that the energy transmission value between the graphite crucible and the insulation layer has been calculated through thermodynamic distribution during the analysis phase. If this value exceeds the set energy transmission index, it can be determined that there is a transmission sub-path with high energy consumption between the two components. In order to reduce the energy consumption on this path, it may be necessary to consider improving the material or structure of the crucible, or optimizing the insulation measures between the crucible and the insulation layer. Such analysis and identification processes are crucial to accurately control and reduce the overall energy consumption of the single crystal furnace.

[0125] Optionally, the transfer parameter includes a heat radiation transfer parameter, and the energy consumption transfer value includes a heat radiation energy consumption transfer value. In order to calculate the energy consumption transfer value between every two single crystal furnace components in the single crystal furnace according to the thermodynamic distribution, step 203 includes the following sub-steps:

[0126] Sub-step 2031, calculating the heat radiation energy consumption transmission value between every two single crystal furnace components in the single crystal furnace.

[0127] In some implementations of the present application, in order to quantify the heat energy exchange between components, especially the energy transferred through the radiation mechanism, it is necessary to calculate the heat radiation energy consumption transfer value between every two components in the single crystal furnace. In this process, it is necessary to consider the material properties, surface temperature, relative position and geometric relationship between each component, because these factors will affect the efficiency of heat radiation.

[0128] For example, suppose you want to calculate the thermal radiation energy transfer value between the heater and the graphite crucible. You first need to know the surface temperature of the heater, the surface temperature of the graphite crucible, and the distance between them. Then you can use Boltzmann's law to calculate the thermal radiation transfer between the two. Through this calculation, you can get the heat energy transferred from the heater to the graphite crucible, which will serve as an important reference for the thermal radiation energy transfer value. Such calculations are crucial for the subsequent determination of the thermal radiation energy value and the optimization of the furnace design to reduce energy consumption.

[0129] Optionally, the calculation formula for the thermal radiation energy transfer value is:

[0130] Q rad,ij =A i q rad,out,i Fij -A j q rad,out,j F ji ,

[0131]

[0132]

[0133] Among them, Q rad,ij A represents the thermal radiation energy consumption transmission value from single crystal furnace component i to single crystal furnace component j (i≠j), i represents the radiation area of ​​single crystal furnace component i, F ij represents the radiation angle coefficient of single crystal furnace component i to single crystal furnace component j, q rad,out,i The heat flux density of the radiation heat flux emitted by single crystal furnace component i, q rad,out,j The heat flux density of the radiation heat flux emitted by the single crystal furnace component j, q rad,out,k The heat flux density of the radiation heat flux emitted by the single crystal furnace component k, ε k represents the emissivity of the single crystal furnace component k, σ is the Stefan Boltzmann constant, T k represents the temperature of the single crystal furnace component k, q rad,in,k The heat flux density of the incident radiation heat flux of the single crystal furnace component k, A k A represents the radiation area of ​​single crystal furnace component k, m represents the radiation area of ​​the single crystal furnace component m, N represents the total number of single crystal furnace components, q rad,out,m The heat flux density of the radiation heat flux emitted by the single crystal furnace component m, F mk It represents the radiation angle coefficient of single crystal furnace component m to single crystal furnace component k.

[0134] In some implementations of the present application, the Stefan-Boltzmann law is used, which is a basic physical law describing blackbody radiation. The reason why it can obtain accurate values ​​is that it combines the basic characteristics and interactions of thermal radiation of objects. In some embodiments of the present application, it is used to calculate the outgoing radiation heat flux density of each component. At the same time, the introduction of the radiation angle coefficient takes into account the relative position and shape between the components, so that the calculation results are more in line with the actual situation.

[0135] By introducing the above formulas, the thermal radiation energy consumption transfer value between the components inside the single crystal furnace can be accurately calculated. By considering the radiation area, emissivity, temperature of each component and the radiation angle coefficient between each other, these formulas can describe the complex process of thermal radiation transmission in detail. This calculation method not only improves the accuracy of energy consumption analysis, but also helps to identify areas with high energy consumption, thus providing a scientific basis for energy consumption optimization.

[0136] Based on sub-step 2031, in order to determine a transmission sub-path between two single crystal furnace components whose energy consumption transmission values ​​are greater than a preset energy consumption transmission index, step 203 includes the following sub-steps:

[0137] Sub-step 2032, determining the thermal radiation energy consumption value of the single crystal furnace according to the thermal radiation energy consumption transmission value between every two single crystal furnace components.

[0138] In some implementations of the present application, by calculating the thermal radiation energy consumption transmission value between every two components in the single crystal furnace, these transmission values ​​are integrated to determine the thermal radiation energy consumption of the entire single crystal furnace.

[0139] For example, suppose that the thermal radiation energy consumption transmission value between the heater and the graphite crucible has been calculated in the previous step. Then this value can be added to the transmission values ​​between other components, such as the thermal radiation energy consumption transmission value between the graphite crucible and the quartz crucible. By accumulating the thermal radiation energy consumption transmission values ​​between all components, the thermal radiation energy consumption of the entire single crystal furnace can be obtained. This value will help to better understand the distribution of energy inside the single crystal furnace and provide guidance for energy consumption optimization.

[0140] Sub-step 2033, calculating a first ratio of the thermal radiation energy consumption transmission value to the thermal radiation energy consumption value.

[0141] In some implementations of the present application, the influence of the thermal radiation transmission between every two components on the overall energy consumption is evaluated by calculating the ratio between the thermal radiation energy consumption transmission value and the thermal radiation energy consumption of the entire single crystal furnace.

[0142] For example, assume that the thermal radiation energy consumption transmission value between the heater and the insulation layer and the thermal radiation energy consumption of the entire single crystal furnace have been calculated in the previous step. The ratio between the two can be calculated as the first ratio. If the first ratio is large, it means that the thermal radiation transmission between the heater and the insulation layer accounts for a large proportion of the overall energy consumption, and further optimization may be required. If the ratio is small, it means that this transmission has little impact on the overall energy consumption and can be regarded as a secondary factor. Such analysis helps to better understand the distribution of energy inside the single crystal furnace, thereby providing guidance for energy consumption optimization.

[0143] Sub-step 2034, when the first ratio is greater than a preset thermal radiation index, determining a thermal radiation transmission sub-path between the two single crystal furnace components.

[0144] In some implementations of the present application, whether the heat radiation transmission between the two single crystal furnace components is significant will be determined based on the first ratio. If the first ratio is greater than a preset heat radiation index, it will be determined that there is a heat radiation transmission subpath between the two components, which requires special attention.

[0145] For example, suppose that the thermal radiation energy consumption transfer value between the heater and the insulation layer has been calculated and a first ratio has been obtained. If this ratio exceeds the preset thermal radiation index, it can be determined that there is a thermal radiation transmission subpath between the two components. This means that the thermal radiation transmission between the heater and the insulation layer has a greater impact on the overall energy consumption, and the thermal radiation mechanism on this path needs to be further optimized or improved to reduce energy consumption. Such analysis helps to better understand the distribution of energy inside the single crystal furnace and provide guidance for energy consumption optimization.

[0146] In order to make the process from sub-step 2032 to sub-step 2034 in the above method more operable, in some embodiments of the present application, after calculating the thermal radiation energy consumption transmission value between each two single crystal furnace components, a radiation energy consumption transmission matrix Q of the following form can be formed: rad :

[0147] Q rad =[Q rad,ij ],

[0148] Among them, Q rad,ij Represents the thermal radiation energy consumption transmission value between single crystal furnace component i and single crystal furnace component j;

[0149] Then, the matrix elements of the radiation energy consumption transfer matrix are filtered to remove the paths with lower energy consumption. If the thermal radiation index is set to 1%, the following formula can be used:

[0150]

[0151] Among them, Q rad,ij represents the thermal radiation energy consumption transmission value between single crystal furnace component i and single crystal furnace component j, Q total Indicates the thermal radiation energy consumption value, namely:

[0152]

[0153] Among them, Q rad,ij represents the thermal conductivity between single crystal furnace component i and single crystal furnace component j, Q total It represents the energy consumption value of thermal radiation, and N represents the total number of components in the single crystal furnace.

[0154] Optionally, the transfer parameter includes a heat transfer path, and the energy consumption transfer value includes a heat conductivity value. In order to calculate the energy consumption transfer value between every two single crystal furnace components in the single crystal furnace according to the thermodynamic distribution, step 203 includes the following sub-steps:

[0155] Sub-step 2035, calculating the thermal conductivity between every two single crystal furnace components in the single crystal furnace.

[0156] In some implementations of the present application, in order to quantify the heat energy exchange between components, especially the energy transferred through the heat transfer mechanism, it is necessary to calculate the thermal conductivity between each two components in the single crystal furnace. In this process, it is necessary to consider the material properties of each component, the temperature gradient, and the contact area and distance between them, because these factors will affect the efficiency of heat conduction.

[0157] For example, suppose you want to calculate the thermal conductivity between the heater electrode and the insulation layer. You first need to know the surface temperature of the heater electrode, the surface temperature of the insulation layer, and the contact area between them. Then you can use Fourier's law to calculate the heat transfer between the two. Through this calculation, you can get the heat energy transferred from the heater to the insulation layer, which will serve as an important reference for the thermal conductivity value. Such calculations are crucial for the subsequent determination of the thermal energy consumption value and the optimization of the furnace design to reduce energy consumption.

[0158] Optionally, the thermal conductivity value is calculated as:

[0159]

[0160] Among them, Q con,ij A represents the thermal conductivity from single crystal furnace component i to single crystal furnace component j (i≠j), i represents the radiation area of ​​single crystal furnace component i, λ eff,ij represents the effective thermal conductivity between single crystal furnace component i and single crystal furnace component j, It represents the gradient calculation in the direction from single crystal furnace part i to single crystal furnace part j.

[0161] In some implementations of the present application, accurate thermal conductivity values ​​are obtained based on the basic physical principles of solid heat conduction. The effective thermal conductivity takes into account the thermal conductivity of the material and the contact quality between the components, while the temperature gradient is the main factor driving the heat transfer. The combination of these parameters makes the calculation results both reliable and practical.

[0162] The advantage of the above thermal conductivity calculation formula is that it can provide a quantitative method to evaluate the efficiency of heat transfer between different components inside the single crystal furnace. By considering the contact area and effective thermal conductivity, as well as the temperature gradient, this formula can accurately describe the heat transfer process, thereby helping engineers optimize the design of the single crystal furnace and reduce energy consumption.

[0163] Based on sub-step 2035, in order to determine a transmission sub-path between two single crystal furnace components whose energy consumption transmission values ​​are greater than a preset energy consumption transmission index, step 203 includes the following sub-steps:

[0164] Sub-step 2036, determining the thermal conductivity energy consumption value of the single crystal furnace according to the thermal conductivity value between every two single crystal furnace components.

[0165] In some implementations of the present application, the heat conduction value between every two components in the single crystal furnace calculated in the previous step is integrated to determine the heat conduction energy consumption of the entire single crystal furnace.

[0166] For example, suppose the thermal conductivity between the heater electrode and the insulation layer has been calculated in the previous step. This value can be added to the thermal conductivity between other components, such as the thermal conductivity between the heater and the heater electrode. By accumulating the thermal conductivity energy consumption between all components, the thermal conductivity energy consumption of the entire single crystal furnace can be obtained. This value will help to better understand the distribution of energy inside the single crystal furnace and provide guidance for energy consumption optimization.

[0167] Sub-step 2037, calculating a second ratio of the thermal conductivity value to the thermal conductivity energy consumption value.

[0168] In some implementations of the present application, the influence of heat conduction transmission between every two components on the overall energy consumption is evaluated by calculating the ratio between the heat conduction value and the heat conduction energy consumption value of the entire single crystal furnace.

[0169] For example, assuming that the thermal conductivity between the heater electrode and the insulation layer and the thermal conductivity energy consumption of the entire single crystal furnace have been calculated in the previous step. The ratio between the two can be calculated as the second ratio. If the second ratio is large, it means that the thermal conductivity transmission between the heater electrode and the insulation layer accounts for a large proportion of the overall energy consumption and may need further optimization. If the ratio is small, it means that this transmission has little impact on the overall energy consumption and can be regarded as a secondary factor. Such analysis helps to better understand the distribution of energy inside the single crystal furnace, thereby providing guidance for energy consumption optimization.

[0170] Sub-step 2038, when the second ratio is greater than a preset thermal conductivity index, determining a heat transfer sub-path between the two single crystal furnace components.

[0171] In some implementations of the present application, whether the heat transfer between the two single crystal furnace components is significant will be determined based on the second ratio. If the second ratio is greater than the preset heat transfer index, it will be determined that there is a heat radiation transfer subpath between the two components, which requires special attention.

[0172] For example, suppose that the thermal conductivity between the heater electrode and the insulation layer has been calculated and a second ratio has been obtained. If this ratio exceeds the preset thermal conductivity index, it can be determined that there is a heat transfer subpath between the two components. This means that the heat transfer between the heater electrode and the insulation layer has a greater impact on the overall energy consumption, and the heat conduction mechanism on this path needs to be further optimized or improved to reduce energy consumption. Such analysis helps to better understand the distribution of energy inside the single crystal furnace and provide guidance for energy consumption optimization.

[0173] In order to make the process from sub-step 2036 to sub-step 2038 in the above method more operable, in some embodiments of the present application, after calculating the thermal conductivity between every two single crystal furnace components, a thermal energy consumption transmission matrix Q of the following form can be formed: con :

[0174] Q con =[Q con,ij ],

[0175] Among them, Q con,ij Represents the thermal conductivity between single crystal furnace component i and single crystal furnace component j;

[0176] Then, the matrix elements of the thermal energy transfer matrix are filtered to remove the paths with lower energy consumption. If the thermal conductivity index is set to 1%, the following formula can be used:

[0177]

[0178] Among them, Q con,ij represents the thermal conductivity between single crystal furnace component i and single crystal furnace component j, Q total Indicates the thermal energy consumption value, that is:

[0179]

[0180] Among them, Q con,ij represents the thermal conductivity between single crystal furnace component i and single crystal furnace component j, Q total It represents the thermal energy consumption value, and N represents the total number of single crystal furnace components.

[0181] Step 204, determining the transmission parameters of the single crystal furnace loss energy according to all transmission sub-paths.

[0182] The transfer parameter is used to characterize the flow mode, flow path and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace.

[0183] In some implementations of this application, all determined transmission sub-paths will be comprehensively considered to determine the transmission parameters of the single crystal furnace loss energy, which will fully reflect the flow mode, flow path and flow amount of energy between various components inside the single crystal furnace. This step is the key to optimizing energy consumption management and implementing energy reduction transformation, because it provides a global perspective to observe and analyze the overall situation of energy loss.

[0184] For example, suppose that multiple energy consumption transmission sub-paths have been identified in the previous steps, such as the path from the heater to the graphite crucible, from the graphite crucible to the quartz crucible, and from the graphite crucible to the insulation layer. The energy consumption transmission values ​​on these paths can be calculated and summarized to determine the energy consumption transfer parameters of the entire single crystal furnace. These parameters may include total radiation energy consumption, thermal conductivity energy consumption, and energy exchange rates between components. In this way, components and paths with higher energy consumption can be located more accurately, thereby providing more targeted data support for subsequent energy-saving transformation.

[0185] Step 205 , determining a target single crystal furnace component from a plurality of single crystal furnace components according to the transferred parameters, and transforming the target single crystal furnace component to reduce the overall energy consumption of the single crystal furnace.

[0186] The method shown in this step has been explained in step 104 and will not be repeated here.

[0187] Optionally, the transfer parameters include a transfer path and an energy consumption transfer value, the transfer path includes a heat conduction transfer path and a heat radiation transfer path, and the energy consumption transfer value includes a heat radiation energy consumption transfer value and a heat conduction value; in order to determine a target single crystal furnace component from a plurality of single crystal furnace components according to the transfer parameters, step 205 includes the following sub-steps:

[0188] Sub-step 2051, when the thermal radiation energy consumption transmission values ​​of the two single crystal furnace components at both ends of the thermal radiation transmission path exceed a preset thermal radiation threshold, the single crystal furnace component that absorbs heat among the two single crystal furnace components is determined as a target single crystal furnace component.

[0189] In some implementations of the present application, in order to reduce the energy consumption caused by thermal radiation, it is necessary to determine the components in the single crystal furnace components that cause the thermal radiation energy consumption transmission value to be too large, so as to process the components to reduce the thermal radiation energy consumption. The specific selection principle is that when the thermal radiation energy consumption transmission values ​​of the two single crystal furnace components at both ends of the thermal radiation transmission path exceed the preset thermal radiation threshold, the single crystal furnace component that absorbs heat among the two single crystal furnace components is determined as the target single crystal furnace component.

[0190] For example, suppose that in the process of determining the target single crystal furnace components, Figure 3 It is determined that the energy transfer path Q1 is a path that transfers energy through thermal radiation from the insulation layer 2 to the furnace wall 1, and the thermal radiation energy consumption transmission value of the energy transfer path Q1 exceeds the preset thermal radiation threshold. At this time, the furnace wall 1 that absorbs heat in the energy transfer path Q1 can be determined as the target single crystal furnace component.

[0191] Sub-step 2052: when the heat conduction values ​​of the two single crystal furnace components at both ends of the heat conduction transmission path exceed a preset heat conduction threshold, both single crystal furnace components are determined as target single crystal furnace components.

[0192] In some implementations of the present application, in order to reduce the energy consumption caused by heat transfer, it is necessary to determine the components in the single crystal furnace components that cause excessive thermal conductivity values, so as to process the components and reduce the energy consumption generated by the heat conduction process. The specific selection principle is that when the thermal conductivity values ​​of the two single crystal furnace components at both ends of the heat transfer path exceed the preset thermal conductivity threshold, both single crystal furnace components are determined as target single crystal furnace components.

[0193] For example, suppose that in the process of determining the target single crystal furnace components, Figure 3 It is determined that the energy transfer path Q8 is a path that transfers energy through heat transfer from the heater electrode 6 to the insulation layer 2, and the thermal conductivity of the energy transfer path Q8 exceeds the preset thermal conductivity threshold. At this time, the heater electrode 6 and the insulation layer 2 at both ends of the energy transfer path Q8 can be determined as target single crystal furnace components.

[0194] Optionally, the transfer parameters include a transfer path and an energy consumption transfer value, the transfer path includes a heat conduction transfer path and a heat radiation transfer path, and the energy consumption transfer value includes a heat radiation energy consumption transfer value and a heat conduction value; in order to modify the target single crystal furnace components to reduce the overall energy consumption of the single crystal furnace, step 205 includes the following sub-steps:

[0195] Sub-step 2053, when the thermal radiation energy consumption transmission value of the target single crystal furnace component exceeds a preset thermal radiation threshold, reflective processing is performed on the surface of the target single crystal furnace component to reduce the energy absorption of the target single crystal furnace component.

[0196] In some implementations of the present application, in order to reduce the energy absorption of the component and thus reduce the energy consumption caused by thermal radiation, it is necessary to perform a reflective treatment on the surface of the component when the thermal radiation energy consumption transmission value of the target single crystal furnace component exceeds a preset thermal radiation threshold. The reflective treatment can be performed by coating a reflective material, changing the surface structure to increase the reflectivity, or by using other methods that can improve the thermal radiation reflection efficiency.

[0197] For example, suppose that in the process of determining the target single crystal furnace components, Figure 3 It is determined that the furnace wall 1 that absorbs heat through thermal radiation in the energy transfer path Q1 is the target single crystal furnace component. In order to reduce this energy consumption, a layer of high reflectivity ceramic coating can be applied to the outer surface of the furnace wall 1. This coating can reflect more thermal radiation and reduce the absorption of thermal energy, thereby reducing the energy consumption of the entire single crystal furnace. Through such a transformation, not only the energy efficiency of the single crystal furnace is improved, but also the temperature uniformity during the crystal growth process is improved.

[0198] Sub-step 2054, when the thermal conductivity value corresponding to the thermal conductivity transmission path of the target single crystal furnace component exceeds a preset thermal conductivity threshold, reducing the contact area of ​​the single crystal furnace components at both ends of the thermal conductivity transmission path, so that the thermal conductivity of the single crystal furnace components at both ends of the thermal conductivity transmission path is reduced.

[0199] In some implementations of the present application, in order to reduce the transmission of energy on this path and thus reduce the overall energy consumption of the entire single crystal furnace, the single crystal furnace components at both ends of the heat transfer path will be targeted and the thermal conductivity will be reduced by reducing the contact area between them.

[0200] For example, suppose that in the process of determining the target single crystal furnace components, Figure 3 It is determined that the heater electrode 6 and the insulation layer 2 that transmit energy through heat transfer in the energy transfer path Q8 are the target single crystal furnace components. In order to reduce the heat transfer on this path, it is possible to consider reducing the contact area between the heater electrode 6 and the insulation layer 2, and to reduce the thermal conductivity by adjusting the contact area between the heater electrode 6 and the insulation layer 2, such as reducing the width or length of the contact surface. In this way, the transmission of energy on this path will be reduced. It is also possible to consider setting an isolation layer, that is, by adding an isolation layer, such as a ceramic insulation pad, between the heater electrode 6 and the insulation layer 2 to reduce direct contact between components, thereby reducing energy consumption. Through such a transformation, the thermal conductivity of the single crystal furnace components at both ends of the heat transfer path can be effectively reduced, thereby optimizing the energy consumption of the entire single crystal furnace.

[0201] In summary, in the embodiments of the present application, the single crystal furnace is accurately simulated to understand and predict the behavior of the single crystal furnace under actual working conditions, and then the distribution and flow of heat inside the single crystal furnace are accurately determined by mathematically describing and solving the heat transfer relationship, so as to analyze the flow of energy and identify components with obvious energy loss. Finally, based on the results of the identification, the components are targeted for modification to reduce unnecessary energy loss when the single crystal furnace is working. Therefore, based on the method of the embodiments of the present application, when improving the energy consumption of the single crystal furnace, there is no need to rely on experience to conduct trial modifications to the single crystal furnace, which avoids the blindness of empirical modifications and solves the problem in the prior art that the single crystal furnace components that need to be modified cannot be accurately selected to effectively reduce the energy consumption of the single crystal furnace.

[0202] refer to Figure 6 , which shows an energy consumption reduction device 30 for a single crystal furnace provided in an embodiment of the present application, comprising:

[0203] The modeling module 301 is used to construct a physical model of the single crystal furnace; the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace.

[0204] The solution module 302 is used to establish the thermodynamic equation of the single crystal furnace under working conditions according to the physical model, and solve the thermodynamic equation to obtain the thermodynamic distribution of the single crystal furnace under working conditions; the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions.

[0205] The path module 303 is used to determine the transfer parameters of the single crystal furnace loss energy according to the thermodynamic distribution; the transfer parameters are used to characterize the flow mode, flow path and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace.

[0206] The transformation module 304 is used to determine a target single crystal furnace component from a plurality of single crystal furnace components according to the transferred parameters, and to transform the target single crystal furnace component to reduce the overall energy consumption of the single crystal furnace.

[0207] Optionally, the working parameters include the geometric structure of the single crystal furnace and the property parameters of the single crystal furnace components and the reaction raw materials in the single crystal furnace, and the property parameters are used to characterize the physical and chemical properties of the single crystal furnace components and the reaction raw materials under the working conditions of the single crystal furnace; the modeling module 301 includes:

[0208] The geometric modeling submodule is used to establish the geometric model of the single crystal furnace according to the geometric structure; the geometric model is used to characterize the shape structure of each single crystal furnace component and its spatial position in the single crystal furnace;

[0209] The meshing submodule is used to divide the geometric model into mesh groups according to the property parameters; the mesh group contains multiple meshes;

[0210] The grid verification submodule is used to test the numerical stability of the divided grid group under the preset model, and obtain the physical model of the single crystal furnace when the numerical stability meets the preset stability threshold; the preset model is used to determine the accuracy of the calculation results of the grid group in the fluid mechanics calculation and the degree of independence between the grid groups.

[0211] Optionally, the solution module 302 includes:

[0212] The equation establishment submodule is used to establish the control equation and boundary condition equation of the single crystal furnace under working conditions according to the preset crystal pulling process parameters;

[0213] The equation solving submodule is used to combine the heat transfer equation with the boundary condition equation and solve the control equation by numerical method to obtain the solution of the control equation;

[0214] The solution verification submodule is used to determine the solution as a thermodynamic distribution when the residual of the solution of the control equation is less than a preset residual index threshold.

[0215] Optionally, the path module 303 includes:

[0216] The sub-path sub-module is used to calculate the energy consumption transmission value between every two single crystal furnace components in the single crystal furnace according to the thermodynamic distribution, and determine a transmission sub-path between two single crystal furnace components whose energy consumption transmission value is greater than a preset energy consumption transmission index;

[0217] The transfer parameter submodule is used to determine the transfer parameters of the single crystal furnace loss energy according to all transmission subpaths.

[0218] Optionally, the transfer parameter includes a heat radiation transfer parameter, the energy consumption transfer value includes a heat radiation energy consumption transfer value, and the sub-path sub-module includes:

[0219] Component thermal radiation energy consumption unit, used to calculate the thermal radiation energy consumption transmission value between every two single crystal furnace components in the single crystal furnace;

[0220] The crystal furnace thermal radiation energy consumption unit is used to determine the thermal radiation energy consumption value of the single crystal furnace according to the thermal radiation energy consumption transmission value between every two single crystal furnace components;

[0221] A first ratio unit, used for calculating a first ratio of the thermal radiation energy consumption transmission value to the thermal radiation energy consumption value;

[0222] The first sub-path unit is used to determine a heat radiation transmission sub-path between two single crystal furnace components when the first ratio is greater than a preset heat radiation index.

[0223] Optionally, the transfer parameter includes a heat transfer path, the energy consumption transfer value includes a heat transfer value, and the sub-path sub-module includes:

[0224] Component heat conduction unit, used to calculate the heat conduction value between every two single crystal furnace components in the single crystal furnace;

[0225] The single crystal furnace heat conduction unit is used to determine the heat conduction energy consumption value of the single crystal furnace according to the heat conduction value between every two single crystal furnace components;

[0226] A second ratio unit, used for calculating a second ratio of the thermal conductivity value to the thermal conductivity energy consumption value;

[0227] The second sub-path unit is used to determine a heat transfer sub-path between two single crystal furnace components when the second ratio is greater than a preset heat conductivity index.

[0228] Optionally, the transfer parameter includes a transmission path and an energy consumption transmission value, the transmission path includes a heat conduction transmission path and a heat radiation transmission path, and the energy consumption transmission value includes a heat radiation energy consumption transmission value and a heat conduction value; the transformation module 304 includes:

[0229] A heat radiation selection submodule, for determining the heat-absorbing single crystal furnace component of the two single crystal furnace components as a target single crystal furnace component when the heat radiation energy consumption transmission values ​​of the two single crystal furnace components at both ends of the heat radiation transmission path exceed a preset heat radiation threshold;

[0230] A heat conduction selection submodule, used for determining both single crystal furnace components as target single crystal furnace components when the heat conduction output values ​​of the two single crystal furnace components at both ends of the heat conduction transmission path exceed a preset heat conduction threshold;

[0231] A reflection surface processing submodule is used to reflect the surface of the target single crystal furnace component when the thermal radiation energy consumption transmission value of the target single crystal furnace component exceeds a preset thermal radiation threshold value, so as to reduce the energy absorption of the target single crystal furnace component;

[0232] The contact surface processing submodule is used to reduce the contact area of ​​the single crystal furnace components at both ends of the heat transfer path when the thermal conductivity value corresponding to the heat transfer path of the target single crystal furnace component exceeds a preset thermal conductivity threshold, so as to reduce the thermal conductivity performance of the single crystal furnace components at both ends of the heat transfer path.

[0233] In summary, in the embodiments of the present application, the single crystal furnace is accurately simulated to understand and predict the behavior of the single crystal furnace under actual working conditions, and then the distribution and flow of heat inside the single crystal furnace are accurately determined by mathematically describing and solving the heat transfer relationship, so as to analyze the flow of energy and identify components with obvious energy loss. Finally, based on the results of the identification, the components are targeted for modification to reduce unnecessary energy loss when the single crystal furnace is working. Therefore, based on the method of the embodiments of the present application, when improving the energy consumption of the single crystal furnace, there is no need to rely on experience to conduct trial modifications to the single crystal furnace, which avoids the blindness of empirical modifications and solves the problem in the prior art that the single crystal furnace components that need to be modified cannot be accurately selected to effectively reduce the energy consumption of the single crystal furnace.

[0234] Reference Figure 7 , the electronic device 500 may include one or more of the following components: a processing component 502 , a memory 504 , a power component 506 , a multimedia component 508 , an audio component 510 , an input / output (I / O) interface 512 , a sensor component 514 , and a communication component 516 .

[0235] The processing component 502 generally controls the overall operation of the electronic device 500, such as operations associated with display, phone calls, data communications, camera operations, and recording operations. The processing component 502 may include one or more processors 520 to execute instructions to complete all or part of the steps of the above-mentioned method. In addition, the processing component 502 may include one or more modules to facilitate the interaction between the processing component 502 and other components. For example, the processing component 502 may include a multimedia module to facilitate the interaction between the multimedia component 508 and the processing component 502.

[0236] The memory 504 is used to store various types of data to support the operation of the electronic device 500. Examples of such data include instructions for any application or method operating on the electronic device 500, contact data, phone book data, messages, pictures, multimedia, etc. The memory 504 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0237] The power supply component 506 provides power to the various components of the electronic device 500. The power supply component 506 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to the electronic device 500.

[0238] The multimedia component 508 includes an interface that provides an output interface between the electronic device 500 and the user. In some embodiments, the interface may include a liquid crystal display (LCD) and a touch panel (TP). If the interface includes a touch panel, the interface may be implemented as a touch screen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touch, slide, and gestures on the touch panel. The touch sensor may not only sense the boundaries of the touch or slide action, but also detect the duration and pressure associated with the touch or slide operation. In some embodiments, the multimedia component 508 includes a front camera and / or a rear camera. When the electronic device 500 is in an operating mode, such as a shooting mode or a multimedia mode, the front camera and / or the rear camera may receive external multimedia data. Each front camera and rear camera may be a fixed optical lens system or have a focal length and optical zoom capability.

[0239] The audio component 510 is used to output and / or input audio signals. For example, the audio component 510 includes a microphone (MIC), and when the electronic device 500 is in an operating mode, such as a call mode, a recording mode, and a voice recognition mode, the microphone is used to receive an external audio signal. The received audio signal can be further stored in the memory 504 or sent via the communication component 516. In some embodiments, the audio component 510 also includes a speaker for outputting audio signals.

[0240] The input / output I / O interface 512 provides an interface between the processing component 502 and the peripheral interface module, which may be a keyboard, a click wheel, buttons, etc. These buttons may include but are not limited to: a home button, a volume button, a start button, and a lock button.

[0241] The sensor assembly 514 includes one or more sensors for providing various aspects of status assessment for the electronic device 500. For example, the sensor assembly 514 can detect the open / closed state of the electronic device 500, the relative positioning of components, such as the display and keypad of the electronic device 500, and the sensor assembly 514 can also detect the position change of the electronic device 500 or a component of the electronic device 500, the presence or absence of user contact with the electronic device 500, the orientation or acceleration / deceleration of the electronic device 500, and the temperature change of the electronic device 500. The sensor assembly 514 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. The sensor assembly 514 may also include an optical sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, the sensor assembly 514 may also include an accelerometer, a gyroscope sensor, a magnetic sensor, a pressure sensor, or a temperature sensor.

[0242] The communication component 516 is used to facilitate wired or wireless communication between the electronic device 500 and other devices. The electronic device 500 can access a wireless network based on a communication standard, such as WiFi, a carrier network (such as 2G, 3G, 4G or 5G), or a combination thereof. In an exemplary embodiment, the communication component 516 receives a broadcast signal or broadcast-related information from an external broadcast management system via a broadcast channel. In an exemplary embodiment, the communication component 516 also includes a near field communication (NFC) module to facilitate short-range communication. For example, the NFC module can be implemented based on radio frequency identification (RFID) technology, infrared data association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology and other technologies.

[0243] In an exemplary embodiment, the electronic device 500 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors or other electronic components to implement a display control method provided in an embodiment of the present application.

[0244] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 504 including instructions, and the instructions can be executed by a processor 520 of an electronic device 500 to perform the above method. For example, the non-transitory storage medium can be a ROM, a random access memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, an optical data storage device, etc.

[0245] Figure 8 600 is a block diagram of an electronic device 600 according to another embodiment of the present invention. For example, the electronic device 600 may be provided as a server. Figure 8 , the electronic device 600 includes a processing component 622, which further includes one or more processors, and a memory resource represented by a memory 632, for storing instructions that can be executed by the processing component 622, such as an application. The application stored in the memory 632 may include one or more modules, each corresponding to a set of instructions. In addition, the processing component 622 is configured to execute instructions to perform a display control method provided in an embodiment of the present application.

[0246] The electronic device 600 may also include a power supply component 626 configured to perform power management of the electronic device 600, a wired or wireless network interface 650 configured to connect the electronic device 600 to a network, and an input / output (I / O) interface 658. The electronic device 600 may operate based on an operating system stored in the memory 632, such as Windows Server TM, Mac OS X TM, Unix TM, Linux TM, FreeBSD TM or the like.

[0247] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0248] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A method for reducing energy consumption of a single crystal furnace, characterized in that: include: Constructing a physical model of a single crystal furnace; the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace; According to the physical model, a thermodynamic equation of the single crystal furnace under working conditions is established, and the thermodynamic equation is solved to obtain the thermodynamic distribution of the single crystal furnace under working conditions; the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions; Determining the transfer parameters of the single crystal furnace loss energy according to the thermodynamic distribution; The transfer parameter is used to characterize the flow mode, flow path, and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace; According to the transfer parameters, a target single crystal furnace component is determined from a plurality of single crystal furnace components, and the target single crystal furnace component is modified to reduce the overall energy consumption of the single crystal furnace; the transfer parameters include a transmission path and an energy consumption transmission value, the transmission path includes a heat conduction transmission path and a heat radiation transmission path, and the energy consumption transmission value includes a heat radiation energy consumption transmission value and a heat conduction value; Determining a target single crystal furnace component from a plurality of single crystal furnace components according to the transferred parameters comprises: When the heat radiation energy consumption transmission values ​​of the two single crystal furnace components at both ends of the heat radiation transmission path exceed a preset heat radiation threshold, determining the heat absorbing single crystal furnace component of the two single crystal furnace components as a target single crystal furnace component; When the heat conduction values ​​of the two single crystal furnace components at both ends of the heat conduction transmission path exceed a preset heat conduction threshold, determining both of the single crystal furnace components as target single crystal furnace components; The modification of the target single crystal furnace components to reduce the overall energy consumption of the single crystal furnace includes: When the thermal radiation energy consumption transmission value of the target single crystal furnace component exceeds a preset thermal radiation threshold, a reflective treatment is performed on the surface of the target single crystal furnace component so as to reduce the energy absorption of the target single crystal furnace component; When the thermal conductivity value corresponding to the thermal transmission path of the target single crystal furnace component exceeds a preset thermal conductivity threshold, the contact area of ​​the single crystal furnace components at both ends of the thermal transmission path is reduced so that the thermal conductivity of the single crystal furnace components at both ends of the thermal transmission path is reduced.

2. The method according to claim 1, characterized in that Determining the transfer parameters of the single crystal furnace loss energy according to the thermodynamic distribution includes: According to the thermodynamic distribution, the energy consumption transmission value between every two single crystal furnace components in the single crystal furnace is calculated, and a transmission sub-path is determined between two single crystal furnace components whose energy consumption transmission value is greater than a preset energy consumption transmission index; According to all transmission sub-paths, the transmission parameters of the single crystal furnace loss energy are determined.

3. The method according to claim 2, characterized in that The transfer parameter includes a heat radiation transfer parameter, the energy consumption transfer value includes a heat radiation energy consumption transfer value, and the energy consumption transfer value between every two single crystal furnace components in the single crystal furnace is calculated according to the thermodynamic distribution, including: Calculating the heat radiation energy consumption transmission value between every two single crystal furnace components in the single crystal furnace; The step of determining a transmission sub-path between two single crystal furnace components whose energy consumption transmission values ​​are greater than a preset energy consumption transmission index comprises: Determine the thermal radiation energy consumption value of the single crystal furnace according to the thermal radiation energy consumption transmission value between every two single crystal furnace components; Calculating a first ratio of the thermal radiation energy consumption transmission value to the thermal radiation energy consumption value; When the first ratio is greater than a preset thermal radiation index, a thermal radiation transmission sub-path is determined between the two single crystal furnace components.

4. The method according to claim 3, characterized in that The calculation formula for the heat radiation energy consumption transmission value between every two single crystal furnace components in the single crystal furnace is: ， ， ， in, It represents the thermal radiation energy consumption transmission value from single crystal furnace component i to single crystal furnace component j (i≠j), represents the radiation area of ​​the single crystal furnace component i, represents the radiation angle coefficient of single crystal furnace component i to single crystal furnace component j, The heat flux density representing the outgoing radiation heat flux of single crystal furnace component i, The heat flux density representing the outgoing radiation heat flux of single crystal furnace component j, The heat flux density representing the outgoing radiation heat flux of the single crystal furnace component k, represents the emissivity of the single crystal furnace component k, is the Stephen Boltzmann constant, represents the temperature of the single crystal furnace component k, The heat flux density representing the incident radiation heat flux of single crystal furnace component k, Indicates the total number of single crystal furnace components. represents the radiation area of ​​the single crystal furnace component k, represents the radiation area of ​​the single crystal furnace component m, The heat flux density representing the outgoing radiation heat flux of the single crystal furnace component m, It represents the radiation angle coefficient of single crystal furnace component m to single crystal furnace component k.

5. The method according to claim 2, characterized in that The transfer parameter includes a heat transfer path, the energy consumption transfer value includes a heat transfer value, and the energy consumption transfer value between every two single crystal furnace components in the single crystal furnace is calculated according to the thermodynamic distribution, including: Calculating the thermal conductivity between every two single crystal furnace components in the single crystal furnace; The step of determining a transmission sub-path between two single crystal furnace components whose energy consumption transmission values ​​are greater than a preset energy consumption transmission index comprises: According to the heat conduction value between every two single crystal furnace components, the heat conduction energy consumption value of the single crystal furnace is determined; Calculating a second ratio of the thermal conductivity value to the thermal conductivity energy consumption value; When the second ratio is greater than a preset thermal conductivity index, a heat transfer sub-path is determined between the two single crystal furnace components.

6. The method according to claim 5, characterized in that The calculation formula of the thermal conductivity between every two single crystal furnace components in the single crystal furnace is: ， in, It represents the thermal conductivity from single crystal furnace component i to single crystal furnace component j (i≠j), represents the radiation area of ​​single crystal furnace component i, represents the effective thermal conductivity between single crystal furnace component i and single crystal furnace component j, It represents the gradient calculation in the direction from single crystal furnace part i to single crystal furnace part j.

7. The method according to claim 1, characterized in that The transfer parameters include a transfer path and an energy consumption transfer value, the transfer path includes a heat conduction transfer path and a heat radiation transfer path, and the energy consumption transfer value includes a heat radiation energy consumption transfer value and a heat conduction value; Determining a target single crystal furnace component from a plurality of single crystal furnace components according to the transferred parameters comprises: When the heat radiation energy consumption transmission values ​​of the two single crystal furnace components at both ends of the heat radiation transmission path exceed a preset heat radiation threshold, determining the heat absorbing single crystal furnace component of the two single crystal furnace components as a target single crystal furnace component; When the heat conduction values ​​of the two single crystal furnace components at both ends of the heat conduction transmission path exceed a preset heat conduction threshold, determining both of the single crystal furnace components as target single crystal furnace components; The modification of the target single crystal furnace components to reduce the overall energy consumption of the single crystal furnace includes: When the thermal radiation energy consumption transmission value of the target single crystal furnace component exceeds a preset thermal radiation threshold, a reflective treatment is performed on the surface of the target single crystal furnace component so as to reduce the energy absorption of the target single crystal furnace component; When the thermal conductivity value corresponding to the thermal transmission path of the target single crystal furnace component exceeds a preset thermal conductivity threshold, the contact area of ​​the single crystal furnace components at both ends of the thermal transmission path is reduced so that the thermal conductivity of the single crystal furnace components at both ends of the thermal transmission path is reduced.

8. An energy consumption reduction device for a single crystal furnace, characterized in that: The device comprises: A modeling module, used to construct a physical model of the single crystal furnace; the physical model is used to characterize the geometric structure and working parameters of the single crystal furnace; A solution module, used to establish a thermodynamic equation of the single crystal furnace under working conditions according to the physical model, and solve the thermodynamic equation to obtain the thermodynamic distribution of the single crystal furnace under working conditions; the thermodynamic equation is used to characterize the heat transfer relationship of the single crystal furnace under working conditions; the thermodynamic distribution is used to characterize the thermodynamic state of the single crystal furnace under working conditions; A path module, used to determine the transfer parameters of the single crystal furnace loss energy according to the thermodynamic distribution; the transfer parameters are used to characterize the flow mode, flow path and flow amount of the loss energy between multiple single crystal furnace components of the single crystal furnace; A transformation module, used for determining a target single crystal furnace component among a plurality of single crystal furnace components according to the transfer parameter, and transforming the target single crystal furnace component to reduce the overall energy consumption of the single crystal furnace; The transfer parameters include a transmission path and an energy consumption transmission value, the transmission path includes a heat conduction transmission path and a heat radiation transmission path, and the energy consumption transmission value includes a heat radiation energy consumption transmission value and a heat conduction value; The transformation module comprises: A heat radiation selection submodule, for determining the heat-absorbing single crystal furnace component of the two single crystal furnace components as a target single crystal furnace component when the heat radiation energy consumption transmission values ​​of the two single crystal furnace components at both ends of the heat radiation transmission path exceed a preset heat radiation threshold; A heat conduction selection submodule, used for determining both single crystal furnace components as target single crystal furnace components when the heat conduction output values ​​of the two single crystal furnace components at both ends of the heat conduction transmission path exceed a preset heat conduction threshold; A reflection surface processing submodule, used for, when the thermal radiation energy consumption transmission value of the target single crystal furnace component exceeds a preset thermal radiation threshold, performing reflection processing on the surface of the target single crystal furnace component, so as to reduce the energy absorption of the target single crystal furnace component; The contact surface processing submodule is used to reduce the contact area of ​​the single crystal furnace components at both ends of the heat transfer path when the thermal conductivity value corresponding to the heat transfer path of the target single crystal furnace component exceeds a preset thermal conductivity threshold, so as to reduce the thermal conductivity performance of the single crystal furnace components at both ends of the heat transfer path.

9. An electronic device, characterized in that: include: A processor, a memory for storing instructions executable by the processor; The processor is configured to execute the instructions to implement the method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: When the instructions in the computer-readable storage medium are executed by a processor of an electronic device, the electronic device is enabled to perform the method as claimed in any one of claims 1 to 7.

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