Tubular furnace for plasma-enhanced thin film deposition

Abstract

The application discloses a furnace tube for plasma enhanced thin film deposition, comprising: a process tube, a reaction chamber and at least one ionization chamber are arranged in the process tube; a gas supply tube, the gas supply tube is used for conveying process gas to be ionized to the ionization chamber, after the process gas to be ionized is ionized in the ionization chamber, the process gas enters the reaction chamber to deposit corresponding thin film on the surface of a substrate or to realize layer-by-layer growth of the thin film on the surface of the substrate through adsorption reaction; a first electrode and a second electrode are located in the process tube and at the middle position of the ionization chamber, wherein the first electrode and / or the second electrode are supported by a baffle, one end of the baffle is connected with the corresponding electrode, and the other end of the baffle is connected with the inner wall of the ionization chamber, so that the process gas to be ionized passes between the first electrode and the second electrode. The application improves the ionization efficiency of the process gas.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment, and more particularly to a furnace tube for plasma-enhanced thin film deposition. Background Technology

[0002] Thin film deposition is a crucial process in semiconductor manufacturing. Since thin films are functional material layers in the chip structure, they remain within the chip after manufacturing, packaging, and testing. The technical parameters of the thin film directly affect chip performance. Due to the high precision required for semiconductor devices, thin films are typically achieved using thin film deposition processes. Thin film fabrication processes can be categorized into Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) based on their deposition methods. CVD refers to the process of depositing a solid film on the surface of a silicon wafer through a chemical reaction involving a gas mixture; CVD equipment is more widely used. CVD processes further include Low-Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and Atomic Layer Deposition (ALD), among others. Atomic Layer Deposition can also incorporate Plasma Enhanced Atomic Layer Deposition (PEALD).

[0003] Plasma-enhanced deposition (ALD) utilizes microwaves or radio frequency to ionize the gas containing the atoms that make up the thin film, creating a localized plasma. This plasma is highly chemically reactive and readily reacts, allowing the desired thin film to be deposited on the substrate. In traditional CVD processes, chemical gases are continuously introduced into the vacuum chamber, making the deposition process continuous. However, in ALD processes, different reactive precursors are alternately introduced into the reaction chamber in the form of gas pulses, making it a non-continuous process.

[0004] In the prior art, plasma-enhanced deposition (PECVD) and atomic layer deposition (ALD) processes can be performed using furnace tube substrate processing equipment.

[0005] Figure 11(a) shows a cross-sectional schematic diagram of the substrate processing apparatus disclosed in patent number ZL03109343.4. This substrate processing apparatus includes a reaction tube 1, a buffer chamber 2 disposed within the reaction tube 1, a gas nozzle 4 disposed within the buffer chamber 2, an electrode 5 for generating plasma, and a boat 6 for supporting a wafer 7. The gas nozzle inlet 10 is used to input chemical gases, which enter the buffer chamber 2 through the gas nozzle hole 9, are then supplied to the wafer 7 through the buffer chamber hole 3 for thin film deposition, and finally, inert gases and residual reaction gases are discharged through the exhaust port 8 of the reaction tube 1.

[0006] As shown in Figures 11(b) and 11(c), which are cross-sectional schematic diagrams of two different embodiments of Figure 11(a), in these two embodiments, since there is a gap between the electrode 5 and the side wall of the buffer chamber 2, when the chemical gas enters the buffer chamber 2 from the gas supply chamber, only a portion of the chemical gas passes between the two electrodes 5 and flows out through the buffer chamber hole 3, while the other portion of the chemical gas flows out directly through the buffer chamber hole 3 along the gap between the electrode 5 and the side wall of the buffer chamber 2. The chemical gas does not completely pass between the two electrodes 5, resulting in only a portion of the chemical gas being ionized and a portion not being ionized.

[0007] Figure 11(d) shows a cross-sectional schematic diagram of another embodiment of Figure 11(a). In this embodiment, two electrodes 5 are disposed on both sides of the buffer chamber hole 3, and the electrodes 5 are close to the inner wall of the buffer chamber 2, thereby defining the main flow direction of the gas. However, because the electrodes 5 are close to the inner wall of the buffer chamber 2, the side of the electrodes 5 that is close to the inner wall of the buffer chamber 2 is not effectively utilized. The electric field generated on this side is absorbed by the inner wall of the buffer chamber 2 and is not used for the ionization of the chemical gas. In addition, the distance between the gas nozzle hole 9 and the buffer chamber hole 3 is relatively short, and the ionization area between the two electrodes is limited. As a result, the chemical gas is not completely ionized after entering the buffer chamber 2 through the gas nozzle hole 9 and flows out through the buffer chamber hole 3, which leads to a low ionization efficiency of the chemical gas and an increase in power consumption. Summary of the Invention

[0008] To address the aforementioned technical problems, the objective of this invention is to improve the ionization efficiency of process gases within the furnace tube. To achieve this objective, this invention provides a furnace tube for plasma-enhanced thin film deposition.

[0009] In some embodiments, the furnace tube for plasma-enhanced thin film deposition includes:

[0010] The process tube includes a reaction chamber for accommodating a multilayer substrate and at least one ionization chamber arranged along the stacking direction of the multilayer substrate, wherein the ionization chamber has a plurality of first vent holes communicating with the reaction chamber.

[0011] A gas supply pipe is located in the ionization chamber and has a plurality of second gas holes sequentially opened along the stacking direction of the multilayer substrate. The gas supply pipe is used to transport the process gas to be ionized and pass it into the ionization chamber through the second gas holes. After the process gas to be ionized in the ionization chamber, it is passed into the reaction chamber through the first gas hole to deposit a corresponding thin film on the substrate surface.

[0012] The first electrode and the second electrode are located inside the process tube and in the middle of the ionization chamber, and are arranged along the stacking direction of the multilayer substrate.

[0013] The first electrode and / or the second electrode are supported by baffles. One end of each baffle is connected to the corresponding electrode, and the other end of each baffle is connected to the inner wall of the ionization chamber, so that the process gas to be ionized passes between the first electrode and the second electrode, thereby improving the ionization efficiency of the process gas. The first vent is located on the vertical line of the line connecting the first electrode and the second electrode.

[0014] In some embodiments, the furnace tube for plasma-enhanced thin film deposition includes:

[0015] The process tube includes a reaction chamber for accommodating a multilayer substrate and at least one ionization chamber arranged along the stacking direction of the multilayer substrate, wherein the ionization chamber has a plurality of first vent holes communicating with the reaction chamber.

[0016] A gas supply pipe is located in the ionization chamber and has a plurality of second gas holes sequentially opened along the stacking direction of the multilayer substrate. The gas supply pipe is used to transport the process gas to be ionized and pass it into the ionization chamber through the second gas holes. After the process gas to be ionized in the ionization chamber, it is passed into the reaction chamber through the first gas hole to deposit a corresponding thin film on the substrate surface.

[0017] The first electrode and the second electrode are located inside the process tube and are arranged along the stacking direction of the multilayer substrate. The first electrode and / or the second electrode are located on the side wall of the ionization chamber, and a portion of the electrode located on the side wall of the ionization chamber is located inside the ionization chamber and the other portion is located outside the ionization chamber.

[0018] Compared with the prior art, the present invention, on the one hand, improves the ionization efficiency of the process gas and maximizes its ionization by constructing a baffle between the electrode and the inner wall of the ionization chamber, allowing the process gas to pass between the two electrodes and preventing it from escaping directly out of the ionization chamber through the gap between the electrode and the inner wall of the ionization chamber without passing between the two electrodes. On the other hand, by constructing at least one electrode on the side wall of the ionization chamber, with part of the electrode located inside the ionization chamber and the other part located outside the ionization chamber, the electrode generates an electric field only in the part located inside the ionization chamber during the ionization process of the process gas, and does not generate an electric field in the part located outside the ionization chamber. This ensures that the electric field generated by the electrode is entirely used for the ionization of the process gas and is not absorbed by the side wall of the ionization chamber, thereby reducing the power consumption of the equipment. Attached Figure Description

[0019] The preferred embodiments will now be described in a clear and easy-to-understand manner, in conjunction with the accompanying drawings, to further explain the above-mentioned characteristics, technical features, advantages, and implementation methods of the present invention.

[0020] Figure 1(a)-1(e) This is a schematic diagram of the cross-sectional structure of a set of embodiments of the furnace tube of the present invention;

[0021] Figure 2(a)-2(e) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0022] Figure 3(a)-3(e) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0023] Figures 4(a)-4(d) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0024] Figure 5(a)-5(e) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0025] Figures 6(a)-6(d) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0026] Figure 7(a)-7(e) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0027] Figures 8(a)-8(b) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0028] Figures 9(a)-9(c) This is a schematic diagram of the cross-sectional structure of another embodiment of the furnace tube of the present invention;

[0029] Figures 10(a)-10(b) This is a three-dimensional structural cross-sectional schematic diagram of a set of embodiments of the furnace tube of the present invention;

[0030] Figures 11(a)-11(d) This is a set of structural schematic diagrams of a substrate processing apparatus in the background art of this invention. Detailed Implementation

[0031] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without any creative effort.

[0032] To keep the drawings concise, each figure only schematically shows the parts relevant to the invention, and these do not represent the actual structure of the product. Furthermore, to facilitate understanding, in some figures, only one of components with the same structure or function is schematically depicted, or only one is labeled. In this document, "one" not only means "only one," but can also mean "more than one."

[0033] In this document, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0034] like Figures 1(a) to 10(b) As shown, the present invention discloses a furnace tube 100 with various embodiments. The main difference between the various embodiments lies in the internal structure of the ionization chamber 140, and the arrangement of the electrodes (e.g., the first electrode 161 and the second electrode 162) and the gas supply pipe 150 within the ionization chamber 140. Regarding the overall structure of the furnace tube 100, the various embodiments employ a similar structure, including at least one process tube 120 that processes the substrate using plasma-enhanced deposition (PECVD) or atomic layer deposition (ALD) processes, and a power supply unit that provides power to the electrodes (e.g., the first electrode 161 and the second electrode 162).

[0035] Specifically, inside the process tube 120, there is a reaction chamber 130 for processing the substrate, an ionization chamber 140 for ionizing process gases, a gas supply pipe 150 for supplying process gases to be ionized into the ionization chamber 140, several additional gas supply pipes 180 for directly supplying process gases or inert gases into the reaction chamber 130, and a heater (not shown in the figure) for heating the process tube 120. Below the reaction chamber 130, there is a crystal boat for carrying the substrate and a lifting mechanism for moving the crystal boat up and down. The process tube 120 and its internal reaction chambers 130 and ionization chambers 140 are all vertical hollow cylindrical structures. The bottom of the reaction chamber 130 is provided with an opening for the crystal boat to enter and exit, so that the crystal boat can move up and down under the action of the lifting mechanism, and the substrate it carries can be moved into or out of the reaction chamber 130 with the crystal boat.

[0036] Figure 10(a) is a cross-sectional view of the furnace tube 100 along the axial direction, and Figure 10(b) is a longitudinal cross-sectional view of the furnace tube 100 outside the ionization chamber 140. At least one pair of electrodes (e.g., a first electrode 161 and a second electrode 162) and a gas supply pipe 150 are disposed inside the ionization chamber 140. The first electrode 161, the second electrode 162, and the gas supply pipe 150 are all fixed vertically within the ionization chamber 140. The ionization chamber 140 has several first gas holes 144 that communicate with the reaction chamber 130, sequentially opened along the vertical direction or the stacking direction of the multilayer substrate. The first electrode 161 and the second electrode 162, connected to a power supply unit, generate a high-frequency electric field for ionizing the process gas, with the highest ionization density between the first electrode 161 and the second electrode 162. The preferred distance between the first electrode 161 and the second electrode 162 is 15mm-60mm, and the preferred ionization power is 100-2000W. A gas supply pipe 150 has a plurality of second gas holes 151 sequentially opened along the vertical direction or the stacking direction of the multilayer substrate. The bottom of the gas supply pipe 150 is connected to an external gas source for conveying the process gas to be ionized into the ionization chamber 140 through the second gas holes 151. After the process gas to be ionized enters the ionization chamber 140, it will be ionized by the first electrode 161 and the second electrode 162, and then enter the reaction chamber 130 through the first gas hole 144 to deposit a corresponding thin film on the substrate surface, or to achieve layer-by-layer growth of the thin film on the substrate surface through an adsorption reaction. The cross-sectional shape of the ionization chamber 140 is not limited to the fan-shaped annular shape shown in the accompanying drawings of various embodiments, and can also be selected as a regular or irregular closed shape such as a semi-circle, triangle, or rectangle, depending on the actual situation. The gas flow rate range in the gas supply pipe 150 is preferably 1L / min-30L / min. The ratio of the flow area or cross-sectional area of ​​the gas supply pipe 150 to the second gas hole 151 is preferably 1:(0.21-0.48). By limiting the ratio of the flow area or cross-sectional area of ​​the gas supply pipe 150 to the second gas hole 151 to the above range, the flow rate of the process gas in the gas supply pipe 150 and the supply speed of the second gas hole 151 to the ionization chamber 140 can be effectively controlled, so that the process gas has sufficient ionization time in the ionization chamber 140.

[0037] Furthermore, as shown in Figures 1(a), 1(b), 1(c), and 1(e), some embodiments of the present invention employ a multi-tube furnace tube structure. In this embodiment, the process tube 120 further includes a fan-shaped inner tube 110, and the inner arc portion of the inner tube 110 forms a concentric circle structure with the process tube 120. The multilayer substrate is located within the inner tube 110. A hollow extraction chamber 112 is formed between the inner tube 110 and the process tube 120. The inner tube 110 has a plurality of third vents 111 connected to the reaction chamber 130 sequentially along the vertical direction or the stacking direction of the multilayer substrate. The third vents 111 are positioned opposite to the ionization chamber 140 and are connected to the extraction chamber 112. An exhaust pipe 113 connected to the extraction chamber 112 is provided at the bottom of the process tube 120, and the exhaust pipe 113 is positioned opposite to the ionization chamber 140. The radial distance d1 between the first vent 144 and the inner wall of the process tube 120 is not less than the radial distance d2 between the inner tube 110 and the inner wall of the process tube 120, so that the first vent 144 can be closer to the multilayer substrate, increasing the probability of process gas reaching the substrate surface.

[0038] As shown in Figure 1(d), another embodiment of the present invention adopts a single-tube furnace tube structure. In this embodiment, the process tube 120 does not have an inner tube 110. It should be noted that the internal structure of the ionization chamber 140 disclosed in the various embodiments of the present invention is not limited to the type of furnace tube. Without departing from the principle of the present invention, different ionization chambers 140 can be adapted to both single-tube and multi-tube furnace tube structures.

[0039] In addition, as shown in Figure 9(a), Figure 9(b) and 9(c) In some embodiments of the present invention, a structure of multiple ionization chambers 140 is adopted. In these embodiments, the internal structure of any embodiment of the ionization chamber 140 of the present invention can be selected according to actual needs, and the internal structures of different ionization chambers 140 can be the same or different.

[0040] Additionally, as shown in Figures 1(a), 1(b), and 1(c), in some embodiments of the multi-tube furnace tube structure of the present invention, the inner tube 110 and the process tube 120 can be fixedly connected by radial walls, and the additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the process tube 120. As shown in Figure 1(e), in another embodiment of the multi-tube furnace tube structure of the present invention, the inner tube 110 can also be fixed to the left side wall 141 and the right side wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 and the first air hole 144 are approximately located on the same arc line, such that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0041] Additionally, it should be noted that the first electrode 161 and the second electrode 162 mentioned in this invention being located in the middle of the ionization chamber 140 means that the first electrode 161 and the second electrode 162 are located in the middle between the first inner wall 146 and the second inner wall 143 of the ionization chamber 140, the first electrode 161 is located in the middle between the left side wall 141 and the right side wall 142, or the second electrode 162 is located in the middle between the left side wall 141 and the right side wall 142, or both the first electrode 161 and the second electrode 162 are located in the middle between the left side wall 141 and the right side wall 142.

[0042] For example, in an atomic layer deposition (ALD) process, a first process gas (e.g., dichlorosilane) is introduced into the process tube 120 through an auxiliary gas supply pipe 180. After the adsorption of the first process gas on the substrate surface reaches saturation, an inert gas is introduced into the process tube 120 through the auxiliary gas supply pipe 180. The inert gas removes excess first process gas from the process tube 120 through a third vent 111 and an exhaust pipe 113, leaving only the portion adsorbed on the substrate surface. Then, a second process gas (e.g., ammonia) enters the ionization chamber 140 through a gas supply pipe 150 and a second vent 151. The second process gas is ionized under the action of a first electrode 161 and a second electrode 162, and enters the reaction chamber 130 through a first vent 144 to react with the first process gas adsorbed on the substrate surface to form a thin film (e.g., a silicon nitride thin film). After the second process gas has completely adsorbed and reacted with the first process gas, the introduction of the second process gas into the ionization chamber 140 is stopped. An inert gas is then introduced into the process tube 120 through the auxiliary gas supply pipe 180 to purge the reaction byproducts on the substrate surface and discharge them through the exhaust pipe 113, thus completing one atomic layer deposition. In the semiconductor process, the above steps can be repeated multiple times as needed to form a thin film of the required thickness on the substrate surface.

[0043] The following will combine Figures 1(a) to 9(c) Each embodiment of the present invention will be described in detail below:

[0044]

Example 1

[0045] As shown in Figure 1(a), this is the first embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0046] In this embodiment, the ionization chamber 140 includes a left side wall 141, a right side wall 142, a first inner side wall 146, and a second inner side wall 143. The first inner side wall 146 may be formed by the inner wall of the process tube 120 between the left side wall 141 and the right side wall 142. One end of the left side wall 141 and the right side wall 142 are fixedly connected to the first inner side wall 146, and the other end is respectively connected to both ends of the second inner side wall 143. The second inner side wall 143 corresponds to the first inner side wall 146, and the second inner side wall 143 is located within the radius of the inner tube 110.

[0047] Inside the ionization chamber 140, the first electrode 161 and the second electrode 162 are located sequentially on the same arc line. The center of this arc is the same as the center of the process tube 120, and the radius of this arc lies between the radii of the process tube 120 and the inner tube 110. The gas supply pipe 150 is located near the left side wall 141, on the same side as the first electrode 161 and the second electrode 162. The first electrode 161 is located midway between the left side wall 141 and the right side wall 142, and the second electrode 162 is located near the right side wall 142. A first vent 144 is opened on the vertical line connecting the first electrode 161 and the second electrode 162.

[0048] Furthermore, baffles (171, 172) are respectively connected between the first electrode 161 and the second electrode 162 and the second inner sidewall 143. Specifically, the first electrode 161 is connected to the second inner sidewall 143 on the left side of the first vent 144 by a first baffle 171, and the second electrode 162 is connected to the second inner sidewall 143 on the right side of the first vent 144 by a second baffle 172. The first baffle 171 extends from the bottom to the top of the ionization chamber 140 along the length of the first electrode 161, and the second baffle 172 extends from the bottom to the top of the ionization chamber 140 along the length of the second electrode 162. In the vertical direction, the upper and lower ends of the first electrode 161 and the second electrode 162 are respectively fixed to the top and bottom of the ionization chamber 140; in the horizontal direction, the first electrode 161 is supported by the first baffle 171, and the second electrode 162 is supported by the second baffle 172. The first baffle 171 and the second baffle 172 are parallel to each other, and a flow channel for the process gas is formed between the first electrode 161 and the second electrode 162. This allows the process gas to pass through the ionization region between the first electrode 161 and the second electrode 162, preventing the process gas from escaping directly from the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140 without passing through the space between the first electrode 161 and the second electrode 162, thereby improving the ionization efficiency of the process gas. The baffles (171, 172) are made of insulating material, preferably quartz.

[0049] In this embodiment, a lifting mechanism raises a crystal boat carrying multilayer substrates into the reaction chamber 130. The process gas to be ionized enters the ionization chamber 140 through the gas supply pipe 150 and the second gas port 151. Inside the ionization chamber 140, a first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, and a second baffle 172 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the second electrode 162. This ensures that the process gas to be ionized must pass between the first electrode 161 and the second electrode 162 and between the first baffle 171 and the second baffle 172 before entering the reaction chamber 130 through the first gas port 144, thereby improving the ionization efficiency of the process gas. The ionized process gas enters the reaction chamber 130 through each of the first gas ports 144 and is uniformly supplied to each substrate carried by the crystal boat. When replacing or discharging the gas in the reaction chamber 130, the original gas in the reaction chamber 130 is first drawn into the extraction chamber 112 through the third vent 111, and then drawn out of the process pipe 120 through the exhaust pipe 113.

[0050]

Example 2

[0051] As shown in Figure 1(b), this is the second embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0052] The only difference between this embodiment and Embodiment 1 is the placement of the second baffle 172. In Embodiment 1, the second baffle 172 is positioned between the second electrode 162 and the second inner wall 143 on the right side of the first vent 144. In this embodiment, one side of the second baffle 172 is connected to the second electrode 162, and the other side is connected to the junction of the right side wall 142 and the first inner wall 146, such that the second baffle 172 forms an acute angle with the right side wall 142.

[0053] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner sidewall 143 and the first electrode 161, and the second baffle 172 blocks the flow of the process gas to be ionized along the space between the right sidewall 142 and the second electrode 162. This ensures that before the process gas to be ionized enters the reaction chamber 130 through the first gas hole 144, it must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the first baffle 171 and the second baffle 172. This prevents the process gas from escaping directly out of the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140 without passing between the first electrode 161 and the second electrode 162, thereby improving the ionization efficiency of the process gas.

[0054]

Example 3

[0055] As shown in Figure 1(c), this is the third embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0056] The difference between this embodiment and Embodiment 1 lies only in the placement of the first baffle 171 and the second baffle 172. In Embodiment 1, the first baffle 171 is perpendicular to the second inner sidewall 143, and the second baffle 172 is positioned between the second electrode 162 and the second inner sidewall 143 to the right of the first air hole 144. In this embodiment, one side of the first baffle 171 is connected to the first electrode 161, and the other side of the first baffle 171 is connected to the second inner sidewall 143. The connection point between the first baffle 171 and the second inner sidewall 143 is offset towards the air supply pipe 150, making the first baffle 171 and the second inner sidewall 143 form an acute angle. One side of the second baffle 172 is connected to the second electrode 162, and the other side is connected to the connection point between the right sidewall 142 and the first inner sidewall 146, making the second baffle 172 and the right sidewall 142 form an acute angle. The extension lines of the first baffle 171 and the second baffle 172 are parallel.

[0057] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, and the second baffle 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162. Furthermore, because the first baffle 171 is inclined, on the one hand, the process gas to be ionized supplied by the gas supply pipe 150 tends to flow more between the first electrode 161 and the first inner wall 146; on the other hand, it reduces the influence of the first baffle 171 on the ionization region between the first electrode 161 and the second electrode 162. This increases the ionization region space between the first electrode 161 and the second electrode 162, so that the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the first baffle 171 and the second baffle 172 before entering the reaction chamber 130 through the first gas hole 144. This prevents the process gas from escaping directly out of the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140 without passing through the space between the first electrode 161 and the second electrode 162, thereby improving the ionization efficiency of the process gas.

[0058]

Example 4

[0059] As shown in Figure 1(d), this is the fourth embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0060] The only difference between this embodiment and embodiment 2 is that the process tube 120 in this embodiment does not have an inner tube 110 inside, while the process tube 120 in embodiment 2 has an inner tube 110 inside and is a multi-tube furnace tube. The other structures are the same as in embodiment 2, and will not be described again here.

[0061] Furthermore, as shown in Figure 1(e), the inner tube 110 can also be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0062]

Example 5

[0063] As shown in Figure 2(a), this is the fifth embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0064] The only difference between this embodiment and Embodiment 1 is the addition of a third baffle 173. In Embodiment 1, the first electrode 161 is connected to the second inner wall 143 on the left side of the first vent 144 by a first baffle 171, and the second electrode 162 is connected to the second inner wall 143 on the right side of the first vent 144 by a second baffle 172. No baffle is provided between the second electrode 162 and the first inner wall 146. In this embodiment, the first baffle 171 and the second baffle 172 are positioned in the same way as in Embodiment 1, and the second electrode 162 is connected to the first inner wall 146 by a third baffle 173. The third baffle 173 is located on the extension line of the second baffle 172, and a vacuum cavity 145 is formed between the right side of the second baffle 172 and the third baffle 173 and the right side wall 142 of the ionization chamber 140. The second electrode 162 is partially located within the ionization chamber 140 to the left of the second baffle 172 and the third baffle 173, and partially located within the vacuum chamber 145 to the right of the second baffle 172 and the third baffle 173. The vacuum level within the vacuum chamber 145 can be independently controlled, and the vacuum level within the vacuum chamber 145 is not affected by the gas flow within the ionization chamber 140 and the reaction chamber 130. When the vacuum chamber 145 is maintained at atmospheric pressure or a low vacuum, the second electrode 162 will not generate an electric field within the vacuum chamber 145, ensuring that the electric field generated by the second electrode 162 and the first electrode 161 is always stably concentrated between the second electrode 162 and the first electrode 161. The vacuum level within the vacuum chamber 145 is preferably 0.005 torr to 10 torr.

[0065] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, the second baffle 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162, and the third baffle 173 blocks the flow of the process gas to be ionized along the space between the first inner wall 146 and the second electrode 162. This ensures that the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the first baffle 171 and the second baffle 172 before entering the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since the second electrode 162 is partially located within the vacuum chamber 145, the second electrode 162 will only generate an electric field within the ionization chamber 140 to the left of the second baffle 172 and the third baffle 173, and will not generate an electric field within the vacuum chamber 145, thus saving power.

[0066]

Example 6

[0067] As shown in Figure 2(b), this is the sixth embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0068] The only difference between this embodiment and Embodiment 5 is the placement of the second baffle 172 and the third baffle 173. In Embodiment 1, the second baffle 172 and the third baffle 173 are parallel to the right side wall 142. In this embodiment, the connection between the second baffle 172 and the second inner side wall 143 is offset towards the right side wall 142, making the second baffle 172 form an acute angle with the right side wall 142; the connection between the third baffle 173 and the first inner side wall 146 is offset towards the right side wall 142, making the third baffle 173 form an acute angle with the right side wall 142.

[0069] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, the second baffle 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162, and the third baffle 173 blocks the flow of the process gas to be ionized along the space between the first inner wall 146 and the second electrode 162. Furthermore, because the third baffle 173 is inclined, the process gas to be ionized tends to flow more between the first baffle 171 and the second baffle 172. This ensures that the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the first baffle 171 and the second baffle 172 before entering the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since both the second baffle 172 and the third baffle 173 are inclined towards the right side wall 142, the portion of the second electrode 162 exposed to the left side of the ionization chamber 140 by the second baffle 172 and the third baffle 173 is greater than the portion located in the vacuum chamber 145. This increases the ionization region of the second electrode 162 within the ionization chamber 140. Consequently, the electric field generated by the second electrode 162 is entirely used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, thus saving power.

[0070]

Example 7

[0071] As shown in Figure 2(c), this is the seventh embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0072] The only difference between this embodiment and embodiment 5 is the placement of the first baffle 171. In embodiment 5, the first baffle 171 is arranged perpendicular to the second inner sidewall 143. In this embodiment, the connection between the first baffle 171 and the second inner sidewall 143 is offset towards the left sidewall 141, so that the first baffle 171 and the second inner sidewall 143 form an acute angle.

[0073] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, the second baffle 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162, and the third baffle 173 blocks the flow of the process gas to be ionized along the space between the first inner wall 146 and the second electrode 162. Furthermore, because the first baffle 171 is inclined, the process gas to be ionized tends to flow between the first baffle 171 and the second baffle 172. This ensures that before entering the reaction chamber 130 through the first gas hole 144, the process gas must pass through the ionization region between the first electrode 161 and the second electrode 162, as well as the flow channel between the first baffle 171 and the second baffle 172. This prevents the process gas from escaping directly from the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140, thereby improving the ionization efficiency of the process gas. Furthermore, because the connection between the first baffle 171 and the second inner wall 143 is offset towards the left wall 141, the influence of the first baffle 171 on the ionization region between the first electrode 161 and the second electrode 162 is reduced, increasing the space of the ionization region between the first electrode 161 and the second electrode 162. This ensures that the electric field generated by the second electrode 162 is entirely used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0074]

Example 8

[0075] As shown in Figure 2(d), this is the eighth embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0076] The only difference between this embodiment and embodiment 6 is the placement of the first baffle 171. In embodiment 6, the first baffle 171 is arranged perpendicular to the second inner sidewall 143. In this embodiment, the connection between the first baffle 171 and the second inner sidewall 143 is offset towards the left sidewall 141, so that the first baffle 171 and the second inner sidewall 143 form an acute angle.

[0077] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner sidewall 143 and the first electrode 161, the second baffle 172 blocks the flow of the process gas to be ionized along the space between the right sidewall 142 and the second electrode 162, and the third baffle 173 blocks the flow of the process gas to be ionized along the space between the first inner sidewall 146 and the second electrode 162. Since the first baffle 171 is inclined, the process gas to be ionized tends to flow between the first baffle 171 and the second baffle 172. This means that before the process gas to be ionized enters the reaction chamber 130 through the first gas hole 144, it must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the first baffle 171 and the second baffle 172, thereby improving the ionization efficiency of the process gas. Furthermore, since both the second baffle 172 and the third baffle 173 are inclined towards the right side wall 142, the portion of the second electrode 162 exposed to the left side of the ionization chamber 140 by the second baffle 172 and the third baffle 173 is greater than the portion located in the vacuum chamber 145. This increases the ionization region of the second electrode 162 within the ionization chamber 140. Consequently, the electric field generated by the second electrode 162 is entirely used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, thus saving power.

[0078] Furthermore, as shown in Figure 2(e), based on Embodiment 6, the inner tube 110 can be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately located on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0079]

Example 9

[0080] As shown in Figure 3(a), this is the ninth embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0081] The difference between this embodiment and Embodiment 5 lies only in the position of the second electrode 162 and the number of baffles. In Embodiment 5, the second electrode 162 is connected to the second inner wall 143 by a second baffle 172, and the second electrode 162 is connected to the first inner wall 146 by a third baffle 173. The right sides of the second baffle 172 and the third baffle 173 form a vacuum cavity 145 with the right side wall 142 of the ionization chamber 140. In this embodiment, the second electrode 162 is disposed on the right side wall 142, and the second baffle 172 and the third baffle 173 are omitted. The second electrode 162 is partially located inside the ionization chamber 140 and partially located outside the ionization chamber 140. In this embodiment, the second electrode 162 is partially located inside the ionization chamber 140 and partially located in the reaction chamber 130.

[0082] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161. This ensures that the process gas must pass through the ionization region between the first electrode 161 and the second electrode 162, as well as the flow channel between the first baffle 171 and the right side wall 142 of the ionization chamber 140, before entering the reaction chamber 130 through the first gas hole 144. This improves the ionization efficiency of the process gas. Furthermore, since the second electrode 162 is partially located outside the ionization chamber 140, it will only generate an electric field within the ionization chamber 140 and will not generate an electric field outside the ionization chamber 140. This ensures that the electric field generated by the second electrode 162 is entirely used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0083] Furthermore, as shown in Figure 3(b), the first baffle 171 can be removed based on Embodiment 9.

[0084] As shown in Figure 3(c), based on Embodiment 9, only the air supply pipe 150 can be adjusted to be on the vertical line connecting the first electrode 161 and the second electrode 162.

[0085] As shown in Figure 3(d), based on Embodiment 9, the gas supply pipe 150 can be adjusted to be on the vertical line connecting the first electrode 161 and the second electrode 162, and positioned outside the radius of the process pipe 120. The process pipe 120 can be configured with a groove structure 121 for mounting the gas supply pipe 150 along its axial direction, thereby increasing the distance between the gas supply pipe 150 and the first gas hole 144, increasing the time for the process gas to pass between the first electrode 161 and the second electrode 162, and allowing the process gas sufficient ionization time.

[0086] As shown in Figure 3(e), based on Embodiment 9, the inner tube 110 can be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately located on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0087]

Example 10

[0088] As shown in Figure 4(a), this is the tenth embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0089] The difference between this embodiment and Embodiment 9 lies only in the structure of the right side wall 142. In Embodiment 9, the right side wall 142 is parallel to the left side wall 141. In this embodiment, the connection between the right side wall 142 and the first inner side wall 146 is offset away from the left side wall 141, and the connection between the right side wall 142 and the second inner side wall 143 is offset away from the left side wall 141, such that the upper end of the right side wall 142 forms an acute angle with the first inner side wall 146, and the lower end of the right side wall 142 forms an acute angle with the second inner side wall 143.

[0090] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161. This ensures that the process gas must pass through the ionization region between the first electrode 161 and the second electrode 162, as well as the flow channel between the first baffle 171 and the right side wall 142, before entering the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since both ends of the right side wall 142 are inclined towards the side away from the left side wall 141, the portion of the second electrode 162 exposed inside the left side of the ionization chamber 140 of the right side wall 142 is greater than the portion outside the ionization chamber 140, thereby increasing the ionization region of the second electrode 162 within the ionization chamber 140. Furthermore, since the second electrode 162 is partially located outside the ionization chamber 140, the second electrode 162 will only generate an electric field within the ionization chamber 140 to the left of the right side wall 142, and will not generate an electric field outside the ionization chamber 140. This allows the electric field generated by the second electrode 162 to be used entirely for the ionization of the process gas, without being absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0091]

Example 11

[0092] As shown in Figure 4(b), this is the 11th embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0093] The only difference between this embodiment and embodiment 9 is the placement of the first baffle 171. In embodiment 9, the first baffle 171 is perpendicular to the second inner sidewall 143. In this embodiment, the connection between the first baffle 171 and the second inner sidewall 143 is offset towards the side closer to the left sidewall 141, so that the first baffle 171 and the second inner sidewall 143 form an acute angle.

[0094] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161. Due to the inclined arrangement of the first baffle 171, the process gas to be ionized supplied by the gas supply pipe 150 tends to flow between the first electrode 161 and the first inner wall 146. This means that before the process gas to be ionized enters the reaction chamber 130 through the first gas hole 144, it must pass through the ionization region between the first electrode 161 and the second electrode 162, as well as the flow channel between the first baffle 171 and the right side wall 142 of the ionization chamber 140. Furthermore, the inclined arrangement of the first baffle 171 increases the ionization region between the right side of the first electrode 161 and the second electrode 162, thereby improving the ionization efficiency of the process gas. Furthermore, since the second electrode 162 is partially located outside the ionization chamber 140, the second electrode 162 will only generate an electric field inside the ionization chamber 140 and will not generate an electric field outside the ionization chamber 140. This allows the electric field generated by the second electrode 162 to be used entirely for the ionization of the process gas and not absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0095]

Example 12

[0096] As shown in Figure 4(c), this is the 12th embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0097] The only difference between this embodiment and embodiment 10 is the placement of the first baffle 171. In embodiment 10, the first baffle 171 is perpendicular to the second inner sidewall 143. In this embodiment, the connection between the first baffle 171 and the second inner sidewall 143 is offset towards the side closer to the left sidewall 141, making the first baffle 171 and the second inner sidewall 143 form an acute angle.

[0098] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161. Because the first baffle 171 is inclined, the process gas to be ionized supplied by the gas supply pipe 150 tends to flow more between the first electrode 161 and the first inner wall 146. This means that before entering the reaction chamber 130 through the first gas hole 144, the process gas must pass through the ionization region between the first electrode 161 and the second electrode 162, as well as the flow channel between the first baffle 171 and the right side wall 142 of the ionization chamber 140, thereby improving the ionization efficiency of the process gas. Furthermore, because the two ends of the right side wall 142 are inclined towards the side away from the left side wall 141, the portion of the second electrode 162 exposed inside the left side of the ionization chamber 140 of the right side wall 142 is greater than the portion outside the ionization chamber 140, thereby increasing the ionization region of the second electrode 162 within the ionization chamber 140. Furthermore, since the second electrode 162 is partially located outside the ionization chamber 140, the second electrode 162 only generates an electric field within the ionization chamber 140 to the left of the right side wall 142, and does not generate an electric field outside the ionization chamber 140. This allows the electric field generated by the second electrode 162 to be used entirely for the ionization of the process gas, without being absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0099] As shown in Figure 4(d), based on Embodiment 10, the inner tube 110 can be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately located on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0100]

Example 13

[0101] As shown in Figure 5(a), this is the 13th embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0102] The difference between this embodiment and Embodiment 1 lies only in the relative positions of the air supply pipe 150, the first electrode 161, and the second electrode 162. In Embodiment 1, the air supply pipe 150 is positioned near the left side wall 141, the first electrode 161 is located between the left side wall 141 and the right side wall 142, and the second electrode 162 is positioned near the right side wall 142. In this embodiment, the air supply pipe 150 is positioned near the first inner side wall 146, the first electrode 161 is positioned near the left side wall 141, the second electrode 162 is positioned near the right side wall 142, and the air supply pipe 150 and the first air hole 144 are located on the vertical line connecting the first electrode 161 and the second electrode 162.

[0103] In this embodiment, the first baffle 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 on the left side of the first gas hole 144 and the first electrode 161, and the second baffle 172 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 on the right side of the first gas hole 144 and the second electrode 162. This ensures that the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the first baffle 171 and the second baffle 172 before entering the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas.

[0104] In addition, as shown in Figure 5(b), the inner tube 110 can be removed from the basis of Example 13, and a single-tube furnace tube can be used.

[0105] As shown in Figure 5(c), based on Embodiment 13, the gas supply pipe 150 can be arranged outside the radius of the process pipe 120, and a groove structure 121 for mounting the gas supply pipe 150 can be adapted to be arranged on the process pipe 120 along its axial direction, thereby increasing the distance between the gas supply pipe 150 and the first gas hole 144 and improving the degree of ionization of the process gas.

[0106] As shown in Figure 5(d), based on Embodiment 13, the first baffle 171 can be adjusted to be between the first electrode 161 and the first inner wall 146 on the left side of the air supply pipe 150, and the second baffle 172 can be adjusted to be between the second electrode 162 and the first inner wall 146 on the right side of the air supply pipe 150.

[0107] As shown in Figure 5(e), based on Embodiment 13, the inner tube 110 can be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately located on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0108] As shown in Figure 6(a), the first baffle 171 can be adjusted to be between the first electrode 161 and the first inner wall 146 on the left side of the air supply pipe 150, based on embodiment 13.

[0109] As shown in Figure 6(b), the first baffle 171 can be removed based on Example 13.

[0110] As shown in Figure 6(c), the second baffle 172 can be removed based on Embodiment 13, and the first baffle 171 can be adjusted to be between the first electrode 161 and the first inner sidewall 146 on the left side of the air supply pipe 150.

[0111] As shown in Figure 6(d), based on Embodiment 13, the first baffle 171 can be adjusted to be between the first electrode 161 and the first inner wall 146 on the left side of the gas supply pipe 150, and the inner pipe 110 can be fixed to the left side wall 141 and the right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140 and is set close to the inner wall of the inner pipe 110. The radius of the inner pipe 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner pipe 110 at other locations. The additional gas supply pipe 180 is located inside the inner pipe 110 and is approximately located on the same arc line as the first air hole 144.

[0112]

Example 14

[0113] As shown in Figure 7(a), this is the 14th embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0114] The difference between this embodiment and embodiment 13 lies only in the placement of the first electrode 161 and the second electrode 162. In embodiment 13, the first electrode 161 is positioned near the left side wall 141, and the second electrode 162 is positioned near the right side wall 142. The air supply pipe 150 and the first air hole 144 are located on the vertical line connecting the first electrode 161 and the second electrode 162. A first baffle 171 is positioned between the second inner side wall 143 to the left of the first air hole 144 and the first electrode 161, and a second baffle 172 is positioned between the second inner side wall 143 to the right of the first air hole 144 and the second electrode 162. In this embodiment, the first baffle 171 and the second baffle 172 are removed. The first electrode 161 is positioned on the left side wall 141, and the second electrode 162 is positioned on the right side wall 142. The opposing sides of the first electrode 161 and the second electrode 162 are located inside the ionization chamber 140, while the opposite sides are located outside the ionization chamber 140.

[0115] In this embodiment, the gas supply pipe 150 and the first gas hole 144 are both located on the vertical line connecting the first electrode 161 and the second electrode 162, and both are located between the left side wall 141 and the right side wall 142. This ensures that the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the left side wall 141 and the right side wall 142 before entering the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since the first electrode 161 and the second electrode 162 are partially located outside the ionization chamber 140, they only generate an electric field inside the ionization chamber 140 and do not generate an electric field outside it. This ensures that the electric field generated by the first electrode 161 and the second electrode 162 is entirely used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0116]

Example 15

[0117] As shown in Figure 7(b), this is the 15th embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0118] The difference between this embodiment and Embodiment 14 lies only in the structure of the left side wall 141 and the right side wall 142. In Embodiment 14, the left side wall 141 and the right side wall 142 are parallel. In this embodiment, the left side wall 141 located between the first electrode 161 and the second inner side wall 143 and the right side wall 142 located between the second electrode 162 and the second inner side wall 143 are parallel, while the left side wall 141 located between the first electrode 161 and the first inner side wall 146 and the right side wall 142 located between the second electrode 162 and the first inner side wall 146 are inclined in opposite directions. In other words, the distance between the portions of the left side wall 141 and the right side wall 142 located between the electrode and the first inner side wall 146 gradually increases, while the portions located between the electrode and the second inner side wall 143 are parallel to each other.

[0119] In this embodiment, the gas supply pipe 150 and the first gas hole 144 are both located on the vertical line connecting the first electrode 161 and the second electrode 162, and both the gas supply pipe 150 and the first gas hole 144 are located between the left side wall 141 and the right side wall 142. This ensures that the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow channel between the left side wall 141 and the right side wall 142 before entering the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since the left side wall 141 and the right side wall 142 are inclined in opposite directions along the same end, the portion of the first electrode 161 and the second electrode 162 exposed inside the ionization chamber 140 is greater than the portion outside the ionization chamber 140, thereby increasing the ionization region of the first electrode 161 and the second electrode 162 within the ionization chamber 140. Furthermore, since the first electrode 161 and the second electrode 162 are partially located outside the ionization chamber 140, the first electrode 161 and the second electrode 162 will only generate an electric field inside the ionization chamber 140 and will not generate an electric field outside the ionization chamber 140. This allows the electric field generated by the first electrode 161 and the second electrode 162 to be used entirely for the ionization of the process gas and not absorbed by the inner wall of the ionization chamber 140, thereby saving power.

[0120] Furthermore, as shown in Figure 7(c), based on Embodiment 15, only the structure of the left side wall 141 and the right side wall 142 can be changed. The left side wall 141 located between the first electrode 161 and the second inner side wall 143 and the right side wall 142 located between the second electrode 162 and the second inner side wall 143 are tilted in opposite directions, and the left side wall 141 located between the first electrode 161 and the first inner side wall 146 and the right side wall 142 located between the second electrode 162 and the first inner side wall 146 are parallel.

[0121] As shown in Figure 7(d), based on Embodiment 15, only the structure of the left side wall 141 and the right side wall 142 can be changed. The left side wall 141 located between the first electrode 161 and the second inner side wall 143 and the right side wall 142 located between the second electrode 162 and the second inner side wall 143 are tilted in opposite directions. The left side wall 141 located between the first electrode 161 and the first inner side wall 146 and the right side wall 142 located between the second electrode 162 and the first inner side wall 146 are tilted in opposite directions, so that the distance between the first electrode 161 and the second electrode 162 is smaller than the distance between any two points of the left side wall 141 and the right side wall 142.

[0122] As shown in Figure 7(e), based on Embodiment 14, the inner tube 110 can be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately located on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0123]

Example 16

[0124] As shown in Figure 8(a), this is the 16th embodiment of the present invention. Based on the overall structure of the furnace tube 100, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement of the first electrode 161, the second electrode 162 and the gas supply pipe 150 within the ionization chamber 140.

[0125] The only difference between this embodiment and Embodiment 13 is the number of baffles. In Embodiment 13, the baffles include a first baffle 171 disposed between the first electrode 161 and the second inner wall 143 on the left side of the first air hole 144, and a second baffle 172 disposed between the second electrode 162 and the second inner wall 143 on the right side of the first air hole 144. In this embodiment, a third baffle 173 and a fourth baffle 174 are added. The third baffle 173 is disposed between the first electrode 161 and the first inner wall 146 on the left side of the air supply pipe 150, and the fourth baffle 174 is disposed between the second electrode 162 and the first inner wall 146 on the right side of the air supply pipe 150. A left vacuum chamber 1451 is formed between the left side of the first baffle 171 and the third baffle 173 and the left side wall 141, and a right vacuum chamber 1452 is formed between the right side of the second baffle 172 and the fourth baffle 174 and the right side wall 142. The vacuum levels in the left vacuum chamber 1451 and the right vacuum chamber 1452 can be controlled independently. The left side of the first electrode 161 is located inside the left vacuum cavity 1451, and the right side of the first electrode 161 is located in the ionization region; the right side of the second electrode 162 is located inside the right vacuum cavity 1452, and the left side of the second electrode 162 is located in the ionization region.

[0126] In this embodiment, a lifting mechanism raises a boat carrying a multilayer substrate into the reaction chamber 130. The process gas to be ionized enters the ionization chamber 140 through the gas supply pipe 150 and the second gas port 151. Within the ionization chamber 140, the process gas flows along the space between the third baffle 173 and the fourth baffle 174, and between the first baffle 171 and the second baffle 172. This ensures that the process gas must pass through the ionization region between the first electrode 161 and the second electrode 162 before entering the reaction chamber 130 through the first gas port 144, thereby improving the ionization efficiency of the process gas. Furthermore, since the first electrode 161 is partially located in the left vacuum chamber 1451 and the second electrode 162 is partially located in the right vacuum chamber 1452, the first electrode 161 and the second electrode 162 generate electric fields only in the ionization chamber 140 on their opposite sides, and do not generate electric fields in the left vacuum chamber 1451 and the right vacuum chamber 1452. This ensures that the electric fields generated by the first electrode 161 and the second electrode 162 are entirely used for the ionization of the process gas and are not absorbed by the inner wall of the ionization chamber 140, thereby saving power. The ionized process gas enters the reaction chamber 130 through each of the first gas holes 144 and is evenly supplied to each substrate carried by the crystal boat. When replacing or discharging the gas in the reaction chamber 130, the original gas in the reaction chamber 130 is first drawn to the extraction chamber 112 through the third gas hole 111, and then extracted from the process tube 120 through the exhaust pipe 113.

[0127] Furthermore, as shown in Figure 8(b), based on Embodiment 16, the inner tube 110 can be fixed to the left side wall 141 and right side wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140, close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations. The additional gas supply pipe 180 is located inside the inner tube 110 and is approximately located on the same arc line as the first air hole 144, so that the distance from the additional gas supply pipe 180 to the multilayer substrate is approximately equal to the distance from the first air hole 144 to the multilayer substrate.

[0128] It should be noted that the above embodiments can be freely combined as needed. The above are merely preferred embodiments of the present invention. For those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A furnace tube for plasma enhanced thin film deposition, characterized by, The process tube comprises a reaction chamber for accommodating a multi-layer substrate and at least one ionization chamber arranged along the stacking direction of the multi-layer substrate, the ionization chamber is provided with a plurality of first gas holes communicated with the reaction chamber; A gas supply pipe is arranged in the ionization chamber and is provided with a plurality of second gas holes along the stacking direction of the multi-layer substrate, the gas supply pipe is used for conveying process gas to be ionized and introducing the process gas into the ionization chamber through the second gas holes, the process gas to be ionized is ionized in the ionization chamber and then introduced into the reaction chamber through the first gas holes to deposit a corresponding thin film on the surface of the substrate; A first electrode and a second electrode are arranged in the process tube and located at the middle part of the ionization chamber, the first electrode and the second electrode are not in contact with the side wall of the ionization chamber and are arranged along the stacking direction of the multi-layer substrate, and the first gas holes are located on the vertical line of the connecting line between the first electrode and the second electrode; The gas supply pipe is located between the first electrode and the second electrode, and the first electrode and the second electrode are supported by a baffle, one end of each baffle is connected with the corresponding electrode, the other end of each baffle is connected with the inner wall of the ionization chamber, and at least one of the first electrode and the second electrode is supported by one baffle; Or the gas supply pipe is located on the same side of the first electrode and the second electrode, and one of the first electrode and the second electrode closer to the gas supply pipe is supported by a baffle, one end of the baffle is connected with the corresponding electrode, and the other end of the baffle is connected with the inner wall of the ionization chamber where the first gas holes are located. The process tube further comprises:

2. The furnace tube for plasma-enhanced thin film deposition of claim 1, wherein, An inner tube is arranged in the process tube, the inner tube and the process tube form a concentric circle structure, and the multi-layer substrate is arranged in the inner tube; The radial distance between the first gas holes and the inner wall of the process tube is not less than the radial distance between the inner tube and the inner wall of the process tube.

3. The furnace tube for plasma enhanced thin film deposition according to claim 1, wherein The side wall of the process tube is provided with an exhaust pipe corresponding to the ionization chamber.

4. The furnace tube for plasma enhanced thin film deposition according to claim 1, wherein The gas supply pipe is located on the vertical line of the connecting line between the first electrode and the second electrode.

5. The furnace tube for plasma enhanced thin film deposition according to claim 1, wherein Part of the inner wall of the process tube forms a first inner side wall of the ionization chamber, the ionization chamber further comprises a left side wall, a right side wall and a second inner side wall opposite to the first inner side wall, the same end of the left side wall and the right side wall is connected with the first inner side wall respectively, and the other end of the left side wall and the right side wall is connected with the second inner side wall respectively, so as to form the hollow ionization chamber along the axial direction of the process tube; The first electrode and the second electrode are sequentially arranged on the same arc line located at the middle part of the first inner side wall and the second inner side wall. ​ 6. The furnace tube for plasma enhanced thin film deposition according to claim 4, wherein the inner wall of the process tube forms a first inner side wall of an ionization chamber, the ionization chamber further comprises a left side wall, a right side wall and a second inner side wall opposite to the first inner side wall, the left side wall and the right side wall of the ionization chamber are connected to the first inner side wall at the same end, and the left side wall and the right side wall of the ionization chamber are connected to the second inner side wall at the other end, so as to form a hollow ionization chamber along the axial direction of the process tube. Wherein, the first electrode and the second electrode are sequentially located on the same arc line, the arc line is located at the middle position of the first inner side wall and the second inner side wall, the gas supply pipe is close to the inner wall of the process tube, and the gas supply pipe and the first gas hole are located on the vertical line of the connecting line between the first electrode and the second electrode.

7. The furnace tube for plasma enhanced thin film deposition according to claim 6, wherein the gas supply pipe is located outside the radius range of the process tube, and the process tube is configured with a groove structure for accommodating the gas supply pipe along the axial direction thereof.

8. The furnace tube for plasma enhanced thin film deposition according to claim 5, wherein a first baffle is connected between the first electrode and the second inner side wall; A second baffle is connected between the second electrode and the second inner side wall, or the right side wall, or the first inner side wall; The first gas hole is located between the first baffle and the second baffle.

9. The furnace tube for plasma enhanced thin film deposition according to claim 8, wherein the first baffle and the second baffle are parallel and perpendicular to the second inner side wall; Or the first baffle is perpendicular to the second inner side wall, and the second baffle is at an acute angle with the right side wall; Or the first baffle is at an acute angle with the second inner side wall, and the second baffle is at an acute angle with the right side wall.

10. The furnace tube for plasma enhanced thin film deposition according to claim 5, wherein a first baffle is connected between the first electrode and the second inner side wall; A second baffle is connected between the second electrode and the second inner side wall, and a third baffle is connected between the second electrode and the right side wall or the first inner side wall, the second baffle and the third baffle have a vacuum cavity with the right side wall, a part of the second electrode is located on the side of the second baffle and the third baffle close to the first electrode, and the other part of the second electrode is located in the vacuum cavity; The first gas hole is located between the first baffle and the second baffle.

11. The furnace tube for plasma enhanced thin film deposition according to claim 10, wherein the vacuum degree in the vacuum cavity is independently controlled.

12. The furnace tube for plasma enhanced thin film deposition according to claim 10, wherein the first baffle and the second baffle are parallel and perpendicular to the second inner side wall, and the third baffle is located on the same straight line with the second baffle; Or the first baffle is perpendicular to the second inner side wall, and the second baffle and the third baffle are at an acute angle with the right side wall, respectively. ​ ​ ​ ​ ​ ​ ​ or the first baffle is at an acute angle with the second inner side wall, the second baffle is perpendicular to the second inner side wall, and the third baffle is in line with the second baffle; or the first baffle is at an acute angle with the second inner side wall, and the second baffle and the third baffle are at an acute angle with the right side wall, respectively.

13. The furnace tube for plasma enhanced thin film deposition according to claim 6, wherein, a first baffle is connected between the first electrode and the second inner side wall or the first inner side wall; a second baffle is connected between the second electrode and the second inner side wall or the first inner side wall; the first gas hole is located between the first baffle and the second baffle.

14. The furnace tube for plasma enhanced thin film deposition according to claim 1, wherein, a ratio of the gas supply pipe to the second gas hole is in a range of 1: (0.21-0.48).

15. A furnace tube for plasma enhanced thin film deposition, characterized by, including: a process tube including a reaction chamber capable of accommodating a multi-layer substrate and at least one ionization chamber arranged along a stacking direction of the multi-layer substrate, the ionization chamber being provided with a plurality of first gas holes in communication with the reaction chamber; a gas supply pipe located in the ionization chamber and provided with a plurality of second gas holes along the stacking direction of the multi-layer substrate, the gas supply pipe being used to transport process gas to be ionized and pass into the ionization chamber through the second gas holes, the process gas to be ionized being ionized in the ionization chamber and then passing into the reaction chamber through the first gas holes to deposit a corresponding thin film on the substrate surface; first and second electrodes located in the process tube and arranged along the stacking direction of the multi-layer substrate, one of the first and second electrodes being located at a middle position of the ionization chamber, and the other being located on a side wall of the ionization chamber and arranged such that a part of the electrode is located in the ionization chamber and another part is located outside the ionization chamber; the electrode located at the middle position of the ionization chamber is supported by a baffle, one end of the baffle being connected to the electrode, and the other end of the baffle being connected to an inner wall of the ionization chamber where the first gas hole is located, so that the process gas to be ionized passes between the first and second electrodes to improve the ionization efficiency of the process gas, and the first gas hole is located between the first and second electrodes.

16. The furnace tube for plasma-enhanced thin film deposition of claim 15, wherein, the process tube further includes: an inner tube configured in the process tube, the inner tube and the process tube forming a concentric circle structure, and the multi-layer substrate being located in the inner tube; a radial distance between the first gas hole and the inner wall of the process tube is not less than a radial distance between the inner tube and the inner wall of the process tube.

17. The furnace tube for plasma enhanced thin film deposition according to claim 16, wherein, a side wall of the process tube is provided with an exhaust pipe corresponding to the ionization chamber.

18. The furnace tube for plasma enhanced thin film deposition according to claim 15, wherein, the first gas hole is located on a perpendicular line of a connecting line between the first and second electrodes.

19. The furnace tube for plasma enhanced thin film deposition according to claim 18, wherein, The gas supply pipe is located on the side of the first electrode away from the second electrode.

20. The furnace tube for plasma enhanced thin film deposition of claim 18, wherein, The gas supply pipe is located on the vertical line of the line connecting the first electrode and the second electrode.

21. The furnace tube for plasma enhanced thin film deposition of claim 19, wherein, The part of the inner wall of the process tube constitutes the first inner side wall of the ionization chamber, the ionization chamber further comprises a left side wall, a right side wall and a second inner side wall opposite to the first inner side wall, the same end of the left side wall and the right side wall of the ionization chamber is connected with the first inner side wall respectively, and the other end of the left side wall and the right side wall of the ionization chamber is connected with the second inner side wall respectively, so as to form the hollow ionization chamber along the axial direction of the process tube; Wherein, the first electrode and the second electrode are sequentially located on the same arc line, the arc line is located at the middle position between the second inner side wall and the first inner side wall, and the second electrode is located on the right side wall.

22. The furnace tube for plasma enhanced thin film deposition of claim 20, wherein, The part of the inner wall of the process tube constitutes the first inner side wall of the ionization chamber, the ionization chamber further comprises a left side wall, a right side wall and a second inner side wall opposite to the first inner side wall, the same end of the left side wall and the right side wall of the ionization chamber is connected with the first inner side wall respectively, and the other end of the left side wall and the right side wall of the ionization chamber is connected with the second inner side wall respectively, so as to form the hollow ionization chamber along the axial direction of the process tube; Wherein, the first electrode and the second electrode are sequentially located on the same arc line, the arc line is located at the middle position between the second inner side wall and the first inner side wall, and the second electrode is located on the right side wall.

23. The furnace tube for plasma enhanced thin film deposition of claim 22, wherein, The gas supply pipe is located outside the radius range of the process tube, and the process tube is configured with a groove structure for accommodating the gas supply pipe along the axial direction thereof.

24. The furnace tube for plasma enhanced thin film deposition of claim 21, wherein, The first electrode and the second inner side wall are connected with a baffle, the baffle is perpendicular to the second inner side wall or forms an acute angle with the second inner side wall, and the first gas hole is located between the baffle and the right side wall; The right side wall is parallel to the baffle, or the part of the right side wall between the second electrode and the first inner side wall forms an acute angle with the inner wall of the process tube, and the part of the right side wall between the second electrode and the second inner side wall forms an acute angle with the second inner side wall.

25. The furnace tube for plasma enhanced thin film deposition of claim 15, wherein, The ratio of the flow area of the gas supply pipe to the second gas hole is in the range of 1:(0.21-0.48).

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