A wide-band self-driven linear polarization sensitive photodetector and its preparation method
The van der Waals heterojunction of ZrS3 and ReSe2 layers realizes self-driven and linear polarization detection, which solves the problem of lack of wide-band, self-driven and linear polarization sensitive photodetectors in the prior art, and realizes high-performance and multi-functional photodetectors Application.
Patent Information
- Application Number
- CN202410976921.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-22
- Publication Date
- 2024-12-20
- Estimated Expiration
- 2044-07-22
AI Technical Summary
The prior art lacks photodetectors that have both wide band, self-drive, and linear polarization sensitive characteristics, which limits their application in optical communication, remote sensing, biomedical imaging and other fields.
The Van der Waals heterojunction formed by ZrS3 and ReSe2 layers uses its built-in electric field to achieve self-driven operation, and the detection of linearly polarized light is achieved through an anisotropic structure, covering the ultraviolet to near-infrared band in response spectral range.
It realizes wide-band, self-driven, linear polarization sensitive photodetectors, improves performance and applicability, has high responsiveness, fast response speed and low dark current, and is suitable for the development of multifunctional optoelectronic devices.
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Figure CN118522809B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of photoelectric detectors, and in particular to a wide-band self-driven linear polarization sensitive photoelectric detector and a preparation method thereof. Background Art
[0002] The polarization of light carries valuable information about its propagation source and environment, and can be used to analyze the shape, surface roughness, texture orientation, and physical and chemical properties of the target. Linearly polarized photodetectors can obtain polarization information of light, thereby increasing the recognition effect and distance of objects, and have important application value in the fields of optical communication, remote sensing, biomedical imaging, and display technology. At present, the means to achieve linear polarization photodetection are usually to integrate polarizers in front of traditional photodetectors or cover the detector surface with optical media with polarization effects, but this complex structural process hinders the miniaturization and integration of linear polarization photodetectors. To achieve highly integrated polarized light detectors, one effective way is to use semiconductor materials that are naturally sensitive to polarized light as the active layer in the detector. The anisotropy of the crystal structure of some two-dimensional (2D) semiconductor materials that have emerged in recent years makes them have significant sensitivity to linearly polarized light, making them suitable for polarization detection. Superimposing the unique properties of these anisotropic two-dimensional materials, such as atomic layer thickness, tunable band gap, dangling bond-free surface, bendable and foldable, provides a new platform for the realization of miniature and easily integrated linear polarization detectors. In addition, existing technologies have shown that van der Waals (vdW) heterostructures combining different anisotropic 2D materials have further advantages in polarized light detection, such as high responsivity, fast response speed, wide spectral response range and high polarization sensitivity.
[0003] Self-driven photodetectors are also critical to achieving energy-efficient integrated systems. Conventional photodetectors require external bias to generate appreciable photocurrent, which often limits their effectiveness in reducing dark current, reducing circuit noise, and achieving low power consumption. Therefore, the development of self-driven photodetectors has important application value in detection in harsh and complex environments.
[0004] In addition, the response spectral range, as a key parameter of the performance of photodetectors, directly affects the applicability, performance and economic benefits of photodetectors in specific applications, and is an important factor in evaluating photodetectors.
[0005] In the related technology, there have been relevant studies on improving the linear polarization sensitivity of photodetectors, realizing the self-driving of photodetectors, and improving the response spectral range of photodetectors. However, there is still a lack of photodetectors that have wide-band, self-driving, and linear polarization sensitive characteristics. Summary of the invention
[0006] In order to solve the deficiencies of the prior art, an object of the present invention is to provide a wide-band self-driven linear polarization sensitive photodetector and a preparation method thereof, so as to improve the performance and applicability of the photodetector.
[0007] To achieve the above object, according to some embodiments, the first aspect of the present invention provides a broadband self-driven linear polarization sensitive photodetector, comprising a substrate, and a ZrS 3 Layer and ReSe 2 Layer, ZrS 3 Layer and ReSe 2 The layers partially overlap to form ZrS 3 / ReSe 2 Van der Waals heterojunction, the source of the photodetector is set on ReSe 2 layer, the drain is set on ZrS 3 The gate is arranged on the back side of the substrate.
[0008] Preferably, the base comprises a silicon substrate and a silicon dioxide layer covering the silicon substrate.
[0009] Preferably, the silicon substrate is a p-type highly doped silicon substrate.
[0010] Preferably, ReSe 2 The layer is a p-type single layer or multilayer structure.
[0011] Preferably, ZrS 3 The layer is an n-type multilayer structure.
[0012] Preferably, the material of the source electrode is one or more of gold, silver, indium, copper, and titanium, and / or the material of the drain electrode is one or more of gold, silver, indium, copper, and titanium.
[0013] Preferably, the source electrode and the drain electrode are both used as lead-out electrodes for connecting to an external circuit.
[0014] Preferably, the gate is made of one or more of gold, silver, indium, copper and titanium.
[0015] Preferably, the gate serves as an extraction electrode for connecting to an external circuit.
[0016] The second aspect of the present invention provides a method for preparing the above-mentioned wide-band self-driven linear polarization sensitive photodetector, comprising:
[0017] preparing a substrate;
[0018] Preparation of ReSe 2 Thin film, ReSe 2 The film is covered on the substrate to obtain ReSe 2 layer;
[0019] Preparation of ZrS 3 , ZrS 3 Directed transfer to ReSe 2 On the film, ZrS 3 Layer and ZrS 3 / ReSe 2 Van der Waals heterojunction;
[0020] Use standard photolithography process, spin-coat photoresist, and position ZrS under the photolithography machine. 3 / ReSe 2 Van der Waals heterojunction, exposed using a photolithography mask and then developed;
[0021] ReSe 2 Layer and ZrS 3 A source electrode and a drain electrode are prepared on the layer;
[0022] A gate is prepared on the back side of the substrate to complete the preparation of the photodetector.
[0023] Compared with the prior art, the present invention has the following beneficial effects:
[0024] The present invention provides a wide-band self-driven linear polarization sensitive photodetector and a preparation method thereof, based on ZrS 3 / ReSe 2 Van der Waals heterojunction photodetector, using n-type ZrS 3 and p-type ReSe 2 The built-in electric field formed at the heterojunction interface realizes self-driven operation without the need for external bias voltage; 3 and ReSe 2 The photoelectric anisotropy caused by structural anisotropy realizes the detection of linearly polarized light; the response spectrum range covers the ultraviolet to near-infrared band (300nm-980nm), and the resulting photodetector has the characteristics of wide band, self-driving, and linear polarization sensitivity, which greatly improves the performance and applicability of the photodetector.
[0025] Advantages of additional aspects of the present invention will be given in part in the following description, and in part will become obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The accompanying drawings in the specification, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.
[0027] Figure 1 A schematic diagram of the structure of the photoelectric detector provided by the present invention;
[0028] Figure 2 The test results of the self-driven optical switch ratio of the photodetector under different wavelengths of light;
[0029] Figure 3 This is the polarization diagram of the photocurrent of the photodetector under 490nm linear polarized light in the self-driving mode as a function of the polarization angle;
[0030] Figure 4 This is the polarization diagram of the photocurrent of the photodetector under 980nm linear polarized light in the self-driven mode as a function of the polarization angle;
[0031] Figure 5 Schematic diagram of the optical switch response characteristics of the photodetector under the self-driven mode of 490nm light illumination;
[0032] Figure 6 for Figure 5 Schematic diagram of the time response characteristics in a single cycle of 0.004s-0.008s. DETAILED DESCRIPTION
[0033] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0034] In the present invention, terms such as "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "side", "bottom", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are relational words determined only for the convenience of describing the structural relationships of the various parts or elements of the present invention, and do not specifically refer to any part or element in the present invention and should not be understood as limitations on the present invention.
[0035] Glossary: ZrS 3 : Zirconium trisulfide; ReSe 2 : Rhenium diselenide.
[0036] like Figure 1 As shown, an embodiment of the present invention first provides a broadband self-driven linear polarization sensitive photodetector, comprising a substrate, and a ZrS 3 Layer and ReSe 2 Layer, ZrS 3 Layer and ReSe 2 The layers partially overlap to form ZrS 3 / ReSe 2 Van der Waals heterojunction, the source of the photodetector is set on ReSe 2 layer, the drain is set on ZrS 3 The gate is arranged on the back side of the substrate.
[0037] In the embodiment of the present invention, anisotropic two-dimensional n-type ZrS3 and p-type ReSe 2 Combined with the construction of a high-quality van der Waals heterojunction. The photodetector based on this heterostructure exhibits excellent photoresponse characteristics, including self-driving capability, linear polarization sensitivity, low dark current, a broadband response spectrum covering the ultraviolet to near-infrared region (300-980nm), a fast response speed (<1.0 milliseconds) and response stability. Experimental verification shows that the photoresponsivity at 490nm is approximately 3.6A / W, and the photoresponsivity at 980nm light is approximately 0.01A / W. In addition, the photocurrent anisotropy ratio in the self-driven mode reaches 2.02 at 490nm and 1.98 at 980nm. At the same time, high-quality self-driven polarization imaging can be performed under 400-980nm illumination.
[0038] In this embodiment, the substrate includes a silicon substrate and a silicon dioxide layer covering the silicon substrate. The silicon substrate is a p-type highly doped silicon substrate (P++ Si). ZrS 3 Layer and ReSe 2 The layer is arranged on top of the silicon dioxide layer, wherein the ReSe 2 The layer is a p-type single layer or multilayer structure, ZrS 3 The layer is an n-type multilayer structure. Single-layer or multi-layer ReSe 2 Layer and multilayer structure of ZrS 3 Layers can be grown by CVD (chemical vapor deposition) or obtained by bulk mechanical exfoliation; n-type or p-type can be obtained by atomic doping.
[0039] In this embodiment, the source, drain and gate are all made of metal and serve as extraction electrodes connected to an external circuit. Specifically, the source can be made of one or more of gold, silver, indium, copper and titanium, the drain can also be made of one or more of gold, silver, indium, copper and titanium, and the gate on the back can be made of one or more of gold, silver, indium, copper and titanium.
[0040] The photodetector provided in this embodiment uses n-type ZrS 3 and p-type ReSe 2 The built-in electric field formed at the heterojunction interface realizes self-driven operation without the need for an external bias voltage. When the source-drain voltage of the detector is zero, self-driven detection can be achieved. 3 and ReSe 2The photoelectric anisotropy caused by structural anisotropy can realize the detection of linearly polarized light. Experimental verification shows that the response spectrum range of the detector covers the ultraviolet to near-infrared band (300nm-980nm), the self-driven detection spectrum range covers the ultraviolet to near-infrared band (300nm-980nm), and the linear polarization response spectrum range can cover the visible to near-infrared band (400nm-980nm), realizing wide-spectrum self-driven polarization detection and imaging functions. In addition, the photodetector has an extremely low dark current in the self-driven mode, as low as ~1pA; in the self-driven working mode, the photogenerated current dichroic ratio in the 490nm band can reach 2.02, and in the 980nm band can reach 1.98, with excellent performance. Because it has the characteristics of wide band, self-driven, and linear polarization sensitivity, the ZrS-based 3 / ReSe 2 Van der Waals heterojunction photodetectors have great prospects in high-performance detection and imaging, providing a new platform and opening up new paths for the development of next-generation multifunctional optoelectronic devices. The devices have simple structures, low costs, small sizes and are easy to integrate.
[0041] Figure 2 The photodetector provided in this embodiment has a source-drain voltage V ds =0V (self-driving mode), light intensity P = 10mW / cm 2 The optical switching ratio test results under 300nm, 405nm, 490nm, 638nm, 830nm and 980nm light indicate the wide-spectrum self-driven detection capability of the photodetector, and the self-driven detection spectrum range can cover the ultraviolet to near-infrared band (300nm-980nm).
[0042] Figure 3 Polarization diagram of the photocurrent of the photodetector provided in this embodiment under 490nm linear polarized light in self-driving mode as a function of polarization angle; Figure 4 This is a polarization diagram of the photocurrent of the photodetector changing with the polarization angle under 980nm linear polarized light in the self-driven mode, indicating that the photodetector has a wide spectrum self-driven polarization detection capability.
[0043] Figure 5 This is a schematic diagram of the time response characteristics of the photodetector under the self-driving mode of 490nm light. Figure 6 for Figure 5 In one cycle (here we take Figure 5 The time response characteristics of the time range of 0.004s-0.008s are shown in Figure 1. Figure 6 It can be seen that in the 490nm light self-driving mode, the on / off response time of the photodetector can be as low as 0.35 / 0.28ms.
[0044] Based on the above-mentioned wide-band self-driven linear polarization sensitive photodetector, this embodiment further provides a method for preparing the photodetector, including:
[0045] S1. preparing a substrate;
[0046] S2. Preparation of ReSe 2 Thin film, ReSe 2 The film is covered on the substrate to obtain ReSe 2 layer;
[0047] S3. Preparation of ZrS 3 , ZrS 3 Directed transfer to ReSe 2 On the film, ZrS 3 Layer and ZrS 3 / ReSe 2 Van der Waals heterojunction;
[0048] S4, using standard photolithography process, spin-coating photoresist, positioning ZrS under the photolithography machine 3 / ReSe 2 Van der Waals heterojunction, exposed using a photolithography mask and then developed;
[0049] S5, respectively in ReSe 2 Layer and ZrS 3 A source electrode and a drain electrode are prepared on the layer;
[0050] S6. Prepare a gate on the back side of the substrate to complete the preparation of the photodetector.
[0051] Specifically, in step S1, taking the substrate including a p-type highly doped silicon substrate and a silicon dioxide layer as an example, firstly prepare a p-type highly doped silicon substrate, and then cover the surface of the substrate with a 300 nm thick silicon dioxide SiO 2 .
[0052] In step S2, ReSe is prepared by mechanical stripping or CVD (chemical vapor deposition) 2 Thin film, ReSe by directional transfer technology 2 The film is covered on the substrate to obtain ReSe 2 layer.
[0053] In step S3, a ZrS layer of a certain thickness is prepared by a mechanical stripping method or a CVD (chemical vapor deposition) method. 3 In this embodiment, the thickness is about 14nm, and ZrS 3 Directed transfer to ReSe 2The film was then cleaned with organic solvents such as acetone and deionized water and dried with nitrogen to obtain ZrS 3 layer.
[0054] In step S5, an electron beam evaporation device is used to deposit ReSe 2 Layer and ZrS 3 The source and drain metal materials are evaporated on the layers respectively. Chromium and gold are used as electrode materials here. First, 10nm thick chromium metal is evaporated, and then 50nm thick gold is evaporated on the chromium metal to enhance the stability and conductivity of the chromium metal. Then, the photoresist is stripped with an organic solvent and cleaned to form the source and drain electrodes.
[0055] In step S6, the back side of the silicon substrate is polished (or a double-polished substrate is directly selected), and metal is evaporated on the back side of the substrate as a gate to complete the preparation of the photodetector.
[0056] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. A broadband self-driven linear polarization sensitive photodetector, It is characterized in that A substrate and a ZrS 3 Layer and ReSe 2 Layer, ZrS 3 Layer and ReSe 2 The layers partially overlap to form ZrS 3 / ReSe 2 Van der Waals heterojunction, ZrS 3 The layer is an n-type multilayer structure, ReSe 2 The layer is a p-type single layer or multi-layer structure, and the source of the photodetector is set on ReSe 2 layer, the drain is set on ZrS 3 The gate is arranged on the back of the substrate; The photodetector utilizes n-type ZrS 3 and p-type ReSe 2 The built-in electric field formed at the heterojunction interface realizes self-driven operation without the need for external bias voltage; The photodetector uses ZrS 3 and ReSe 2 The photoelectric anisotropy caused by structural anisotropy enables the detection of linearly polarized light.
2. A broadband self-driven linear polarization sensitive photodetector as claimed in claim 1, It is characterized in that The base comprises a silicon substrate and a silicon dioxide layer covering the silicon substrate.
3. A broadband self-driven linear polarization sensitive photodetector as claimed in claim 2, It is characterized in that The silicon substrate is a p-type highly doped silicon substrate.
4. A broadband self-driven linear polarization sensitive photodetector as claimed in claim 1, It is characterized in that The material of the source electrode is one or more of gold, silver, indium, copper, and titanium, and / or the material of the drain electrode is one or more of gold, silver, indium, copper, and titanium.
5. A broadband self-driven linear polarization sensitive photodetector as claimed in claim 4, It is characterized in that The source electrode and the drain electrode are both used as extraction electrodes for connecting to an external circuit.
6. A broadband self-driven linear polarization sensitive photodetector as claimed in claim 1, It is characterized in that The gate is made of one or more of gold, silver, indium, copper and titanium.
7. A broadband self-driven linear polarization sensitive photodetector as claimed in claim 6, It is characterized in that The gate is used as an extraction electrode for connecting to an external circuit.
8. A method for preparing a broadband self-driven linear polarization sensitive photodetector according to any one of claims 1 to 7, It is characterized in that include: preparing a substrate; Preparation of ReSe 2 Thin film, ReSe 2 The film is covered on the substrate to obtain ReSe 2 layer; Preparation of ZrS 3 , ZrS 3 Directed transfer to ReSe 2 On the film, ZrS 3 Layer and ZrS 3 / ReSe 2 Van der Waals heterojunction; Use standard photolithography process, spin-coat photoresist, and position ZrS under the photolithography machine. 3 / ReSe 2 Van der Waals heterojunction, exposed using a photolithography mask and then developed; ReSe 2 Layer and ZrS 3 A source electrode and a drain electrode are prepared on the layer; A gate is prepared on the back of the substrate to complete the preparation of the photodetector; Using n-type ZrS 3 and p-type ReSe 2 The built-in electric field formed at the heterojunction interface realizes self-driven operation without the need for external bias voltage; With ZrS 3 and ReSe 2 The photoelectric anisotropy caused by structural anisotropy enables the detection of linearly polarized light.