A butterfly laser and its preparation method

Abstract

The present invention discloses a butterfly laser, comprising a heat sink, a laser chip, a capacitor, and a first conductive area; the first conductive area is arranged on the heat sink, and the laser chip is arranged in the first conductive area; wherein the capacitor and the heat sink are an integrated structure, the first electrode of the capacitor is connected to the first pin of the butterfly laser through the first conductive area, and the second electrode of the capacitor is connected to the first electrode of the laser chip. This simplifies the preparation process and improves product performance.

Description

Technical Field

[0001] The invention relates to the field of semiconductor laser devices, and in particular to a butterfly laser and a preparation method thereof. Background Art

[0002] The butterfly laser is a semiconductor laser component. Due to its small size, low power consumption, and high reliability, it has attracted more and more attention and applications. The butterfly laser is generally composed of a laser chip, a thermistor, a photodetector, a heat sink, and a collimating lens. Its structure is similar to the shape of a butterfly, hence the name "butterfly laser". Generally, the laser chip is directly connected to the pin of the laser through a metal lead, but directly connecting the pin through a metal lead may cause the signal received by the laser chip to be inaccurate, affecting the performance of the laser emitted by the laser chip. Summary of the invention

[0003] To this end, the present invention provides a butterfly laser and a preparation method thereof, in an effort to solve or at least alleviate at least one of the above problems.

[0004] According to one aspect of the present invention, there is provided a butterfly laser, comprising a heat sink, a laser chip, a capacitor, and a first conductive region; the first conductive region is arranged on the heat sink, and the laser chip is arranged in the first conductive region; wherein the capacitor and the heat sink are an integrated structure, a first electrode of the capacitor is connected to a first pin of the butterfly laser through the first conductive region, and a second electrode of the capacitor is connected to a first electrode of the laser chip.

[0005] Optionally, a second conductive area is further provided on the heat sink, the laser chip is provided in the second conductive area, and the first electrode of the laser chip is connected to the second electrode of the capacitor through the second conductive area.

[0006] Optionally, a third conductive area is further provided on the heat sink, and the second electrode of the laser chip is connected to the second pin of the butterfly laser via the third conductive area; the second conductive area is provided between the first conductive area and the third conductive area.

[0007] Optionally, an area of ​​the second conductive region is greater than an area of ​​the first conductive region and an area of ​​the third conductive region.

[0008] Optionally, the butterfly laser also includes a thermistor, and a fourth conductive area and a fifth conductive area are also provided on the heat sink. The thermistor is arranged in the fourth conductive area, one end of the thermistor is connected to the third pin of the butterfly laser through the fourth conductive area, and the other end of the thermistor is connected to the fourth pin of the butterfly laser through the fifth conductive area.

[0009] Optionally, the polishing flatness of the surface of the heat sink on which the first conductive area, the second conductive area and the third conductive area are provided is less than 0.2 micrometers.

[0010] Optionally, the thicknesses of the first conductive region, the second conductive region, the third conductive region, the fourth conductive region and the fifth conductive region are the same, ranging from 4 to 5 microns.

[0011] Optionally, the material of the first conductive region, the second conductive region, the third conductive region, the fourth conductive region and the fifth conductive region is an alloy of gold, platinum and titanium, and the material of the heat sink is aluminum oxide, copper diamond or aluminum nitride.

[0012] Optionally, the butterfly laser also includes an inductor and a sixth conductive region, the inductor is arranged in the sixth conductive region, one end of the inductor is connected to the sixth conductive region, the other end of the inductor is connected to the second pin of the butterfly laser through the third conductive region, and the second electrode of the laser chip is connected to the second pin through the sixth conductive region, the inductor, and the third conductive region.

[0013] According to another aspect of the present invention, a method for preparing a butterfly laser is also provided, comprising: forming a heat sink; forming a first conductive film layer on the heat sink; patterning the first conductive film layer to obtain a first conductive area and a second conductive area; forming a dielectric material layer on the surface of the heat sink formed with the first conductive area and the second conductive area, the dielectric material layer covering the first conductive area and the second conductive area; patterning the dielectric material layer to form a dielectric layer, a first part of the dielectric layer covering the first conductive area, and a second part of the dielectric layer covering the second conductive area; forming a second conductive film layer, the second conductive film layer covering the first conductive area, the second conductive area and the dielectric layer; patterning the second conductive film layer to form an electrode layer, the electrode layer being connected to the first conductive area; wherein a part of the second conductive area, the dielectric layer and the electrode layer serve as a capacitor of the butterfly laser.

[0014] The butterfly laser according to the present invention is characterized by comprising a heat sink, a laser chip, a capacitor, and a first conductive area; the first conductive area is arranged on the heat sink, and the laser chip is arranged in the first conductive area; wherein the capacitor and the heat sink are an integrated structure, the first electrode of the capacitor is connected to the first pin of the butterfly laser through the first conductive area, and the second electrode of the capacitor is connected to the first electrode of the laser chip. This simplifies the preparation process and improves product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0016] Figure 1 A schematic diagram showing the structure of a heat sink for a butterfly laser according to an embodiment of the present invention is shown;

[0017] Figure 2 A schematic diagram of the structure of a butterfly laser according to an embodiment of the present invention is shown;

[0018] Figure 3 shows a top view of a butterfly laser according to an embodiment of the present invention;

[0019] Figures 4a-4f A structural schematic diagram of each step of a method for preparing a butterfly laser according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0020] The exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present application and to fully convey the scope of the present application to those skilled in the art.

[0021] like Figure 1 As shown, a butterfly laser 10 according to an embodiment of the present invention includes a heat sink 11, a laser chip 12, a capacitor 13, and a first conductive area 101; the first conductive area 101 is arranged on the heat sink 11, and the laser chip 12 is arranged in the first conductive area 101; wherein the capacitor 13 and the heat sink 11 are an integrated structure, the first electrode of the capacitor 13 is connected to the first pin of the butterfly laser through the first conductive area 101, and the second electrode of the capacitor 13 is connected to the first electrode of the laser chip 12. The capacitor 13 and the heat sink 11 are an integrated structure, which simplifies the preparation process. In addition, the laser chip 12 is connected to the first pin through the capacitor 13 and the first conductive area 101, which can reduce the noise in the signal, improve the product performance, and reduce the signal loss.

[0022] The heat sink 11 is also provided with a second conductive area 102, the laser chip 12 is provided in the second conductive area 102, and the first electrode of the laser chip 12 is connected to the second electrode of the capacitor 13 through the second conductive area 102. The heat sink 11 is also provided with a third conductive area 103, and the second electrode of the laser chip 12 is connected to the second pin through the third conductive area 103; the second conductive area 102 is provided between the first conductive area 101 and the third conductive area 103. In this way, both electrodes of the laser chip 12 are connected to the pins through the conductive area, which can minimize signal loss. Specifically, the capacitor can be provided inside the heat sink, and the first conductive area and the third conductive area are respectively connected through the two exposed pins.

[0023] In the embodiment of the present invention, the first electrode of the laser chip 12 is a positive electrode, and the second electrode is a negative electrode. Specifically, the second electrode of the laser chip 12 is connected to the second conductive area 102 through gold-tin solder and fixed on the second conductive area 102. In order to fully connect and contact the second electrode of the laser chip 12 with the second conductive area 102, the area of ​​the second conductive area 102 is larger than the area of ​​the first conductive area 101 and the area of ​​the third conductive area 103.

[0024] In the embodiment of the present invention, the butterfly laser further includes a thermistor, and the heat sink 11 is further provided with a fourth conductive region 104 and a fifth conductive region 105. The thermistor 14 is provided in the fourth conductive region 104, and one end of the thermistor 14 is connected to the third pin of the butterfly laser through the fourth conductive region 104, and the other end of the thermistor 14 is connected to the fourth pin of the butterfly laser through the fifth conductive region 105. Both ends of the thermistor 14 are also connected to the third pin and the fourth pin through the fourth conductive region 104 and the fifth conductive region 105, respectively, so that the detection sensitivity of the thermistor can be improved, and the detection error and decreased detection sensitivity caused by the direct connection of the thermistor to the pin of the butterfly laser can be avoided.

[0025] In the embodiment of the present invention, the butterfly laser further includes an inductor (not shown in the figure) and a sixth conductive region 106. The inductor is arranged on the sixth conductive region 106, one end of the inductor is connected to the sixth conductive region 106, and the other end of the inductor is connected to the second pin of the butterfly laser through the third conductive region 103. The second electrode of the laser chip 12 is connected to the second pin of the butterfly laser through the sixth conductive region 106, the inductor, and the third conductive region 103. The function of the inductor is to filter out the rectified AC ripple by passing DC and blocking AC, passing low frequencies and blocking high frequencies; at the same time, the inductor can also filter out the effects of oscillation, choking, and notching.

[0026] Because laser chips, capacitors, thermistors and other devices will be set on the conductive area of ​​the heat sink later, and the conductive area will be connected to the pins by setting leads, in order to facilitate the subsequent process, the polishing flatness of the surface of the heat sink 11 with the first conductive area 101, the second conductive area 102 and the third conductive area 103 is less than 0.2 microns. For the convenience of preparation, the thickness of the first conductive area 101, the second conductive area 102, the third conductive area 103, the fourth conductive area 104, the fifth conductive area 105 and the sixth conductive area 106 are the same, ranging from 4 to 5 microns. Specifically, the number of conductive areas on the heat sink can be set as needed, so that the thickness of all conductive areas can be set to the same, which is convenient for one-time deposition and etching, and simplifies the preparation process. Specifically, different conductive areas are insulated from each other, and the thickness of different conductive areas can also be different.

[0027] In the embodiment of the present invention, the materials of the first conductive area, the second conductive area, the third conductive area, the fourth conductive area and the fifth conductive area are alloys of gold, platinum and titanium, and the material of the heat sink is aluminum oxide, copper diamond or aluminum nitride. Specifically, the materials of all conductive areas set on the heat sink can be alloys of gold, platinum and titanium. Specifically, the materials of different conductive areas can also be different.

[0028] In the embodiment of the present invention, Figure 2-3 As shown, the butterfly laser further includes a photodetector 15, a lens 16, an optical isolator 17, a spacer 18, a semiconductor cooler 19 (Thermoelectric Cooler, referred to as TEC), a tube shell 20, and a plurality of pins 21. Specifically, the photodetector 15 is also arranged on the heat sink 11, and the heat sink 11 is also provided with a seventh conductive area 107 and an eighth conductive area 108. One end of the photodetector is connected to a pin of the butterfly laser through the seventh conductive area 107, and the other end is connected to another pin of the butterfly laser through the eighth conductive area 108. The photodetector 15 is connected to different pins of the butterfly laser through the seventh conductive area 107 and the eighth conductive area 108, respectively, so that the detection accuracy of the photodetector can be improved.

[0029] In the embodiment of the present invention, the lens 16, the heat sink 11, and the optical isolator 17 are all connected to the TEC 19 via the pad 18. Specifically, the material of the pad 18 can be tungsten copper. The lens 16 and the optical isolator 17 can also be arranged on the heat sink 11. In this case, the pad 18 is not required, and the heat sink 11 is directly in contact with the TEC 19.

[0030] The embodiment of the present invention further provides a method for preparing a butterfly laser, comprising:

[0031] forming a heat sink 30;

[0032] A first conductive film layer 31 is formed on the heat sink 30. Figure 4a As shown;

[0033] The first conductive film layer 31 is patterned to obtain a first conductive region 311 and a second conductive region 312. Figure 4b As shown;

[0034] A dielectric material layer 32 is formed on the surface of the heat sink having the first conductive region 311 and the second conductive region 312. The dielectric material layer 32 covers the first conductive region 311 and the second conductive region 312. Figure 4c As shown;

[0035] The dielectric material layer 32 is patterned to form a dielectric layer 321, wherein a first portion of the dielectric layer 321 covers the first conductive region 311, and a second portion of the dielectric layer 321 covers the second conductive region 312. Figure 4d As shown;

[0036] A second conductive film layer 33 is formed, and the second conductive film layer 33 covers the first conductive region 311, the second conductive region 312 and the dielectric layer 321. Figure 4e As shown;

[0037] The second conductive film layer 33 is patterned to form an electrode layer 331, and the electrode layer 331 is connected to the first conductive region 311. Figure 4f shown.

[0038] A portion of the second conductive region 312, the dielectric layer 321, and the electrode layer 331 can be used as a capacitor for a butterfly laser. On the portion of the second conductive region 312 that does not cover the dielectric layer 321, the first electrode of the laser chip and the second conductive region 312 are welded together by gold-tin solder. Specifically, the first electrode of the laser chip is a negative electrode. The first conductive region 311 is connected to a pin of the laser through a conductive lead. Specifically, a portion of the second conductive region 312 is used as the second electrode of the capacitor, and the electrode layer 331 is used as the first electrode of the capacitor; in this way, a capacitor is formed by a simple process, which can improve the preparation efficiency and simplify the preparation process.

[0039] In the embodiment of the present invention, the patterning process may specifically include exposure, development, and etching processes.

[0040] The butterfly laser also includes a thermistor, a third conductive area, a fourth conductive area, and a fifth conductive area on the heat sink; the second electrode of the laser chip is connected to a pin of the laser through the third conductive area. The thermistor is set in the fourth conductive area, one end of the thermistor is connected to the third pin through the fourth conductive area, and the other end of the thermistor is connected to the fourth pin through the fifth conductive area. The third conductive area, the fourth conductive area, and the fifth conductive area can be formed at the same time as the first conductive area and the second conductive area. All conductive areas set on the heat sink can be formed at the same time.

[0041] The capacitor can also be built inside the heat sink. The specific method is: form a groove on the heat sink, fix the capacitor in the groove, expose the two electrodes of the capacitor, connect the two electrodes and the pins respectively through leads, inject curable glue, seal the capacitor into the groove, and only expose the pins.

[0042] In the description of the embodiments of the present application, it needs to be understood that the orientations or positional relationships indicated by “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0043] It should be understood that expressions such as "including" and "may include" that may be used in the present application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In the present application, terms such as "including" and / or "having" may be interpreted as indicating specific characteristics, numbers, operations, constituent elements, components, or combinations thereof, but may not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0044] In addition, in the embodiments of the present application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0045] In the embodiments of the present application, expressions including ordinal numbers such as "first" and "second" can modify various elements. However, such elements are not limited by the above expressions. For example, the above expressions do not limit the order and / or importance of the elements. The above expressions are only used to distinguish one element from other elements.

[0046] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0047] In the description of the embodiments of the present application, unless otherwise specified, “plurality” means two or more.

[0048] In the description of the embodiments of the present application, when a component is referred to as being "connected" or "accessed" to other components, it should be understood that: the component is not only directly connected to or accessed to other components, but also another component may exist between the component and the other components. On the other hand, when a component is referred to as being "directly connected" or "directly accessed" to other components, it should be understood that there is no component between them. When a component is referred to as being "movably connected" to other components, it means that the positional relationship between the component and the other components is changeable, such as the relationship between a slide rail and a slider, the slider can slide on the slide rail, and the slide rail and the track are movably connected. When a component is referred to as being "fixedly connected" to other components, it means that the positional relationship between the component and the other components after being assembled together is relatively fixed.

[0049] Furthermore, those skilled in the art will appreciate that although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features from different embodiments is meant to be within the scope of the present application and to form different embodiments.

[0050] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Although the present application is described according to a limited number of embodiments, it is understood by the technicians in the technical field that other embodiments can be envisioned within the scope of the present application described thereby, thanks to the above description. In addition, it should be noted that the language used in this specification is mainly selected for the purpose of readability and teaching, rather than for explaining or limiting the subject matter of the present application. Therefore, without departing from the scope and spirit of the attached claims, many modifications and changes are obvious to those of ordinary skill in the art. For the scope of the present application, the disclosure made in the present application is illustrative, not restrictive, and the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A butterfly laser, characterized in that: It includes a heat sink, a laser chip, a capacitor, and a first conductive area; the first conductive area is arranged on the heat sink, the heat sink is also provided with a second conductive area, and the laser chip is arranged in the second conductive area; wherein the capacitor and the heat sink are an integral structure, the first electrode of the capacitor is connected to the first pin of the butterfly laser through the first conductive area, the first electrode of the laser chip is connected to the second electrode of the capacitor through the second conductive area, the heat sink is also provided with a third conductive area, and the second electrode of the laser chip is connected to the second pin of the butterfly laser through the third conductive area; the butterfly laser also includes a thermistor, the heat sink is also provided with a fourth conductive area and a fifth conductive area, the thermistor is arranged in the fourth conductive area, one end of the thermistor is connected to the third pin through the fourth conductive area, and the other end of the thermistor is connected to the fourth pin through the fifth conductive area; the second conductive area is arranged between the first conductive area and the third conductive area, and the area of ​​the second conductive area is larger than the area of ​​the first conductive area and the area of ​​the third conductive area; Wherein, a first conductive film layer is formed on the heat sink; the first conductive film layer is patterned to obtain the first conductive area and the second conductive area; a dielectric material layer is formed on the surface of the heat sink formed with the first conductive area and the second conductive area, and the dielectric material layer covers the first conductive area and the second conductive area; the dielectric material layer is patterned to form a dielectric layer, a first part of the dielectric layer covers the first conductive area, and a second part of the dielectric layer covers the second conductive area; a second conductive film layer is formed, and the second conductive film layer covers the first conductive area, the second conductive area and the dielectric layer; the second conductive film layer is patterned to form a first electrode of the capacitor; a part of the second conductive area forms the second electrode of the capacitor.

2. The butterfly laser according to claim 1, characterized in that: The polishing flatness of the surface of the heat sink where the first conductive area, the second conductive area and the third conductive area are arranged is less than 0.2 micrometers.

3. The butterfly laser according to claim 1, characterized in that: The thickness of the first conductive region, the second conductive region, the third conductive region, the fourth conductive region and the fifth conductive region are the same, ranging from 4 to 5 microns.

4. The butterfly laser according to claim 1, characterized in that: The material of the first conductive region, the second conductive region, the third conductive region, the fourth conductive region and the fifth conductive region is an alloy of gold, platinum and titanium.

5. The butterfly laser according to claim 1, characterized in that: It also includes an inductor and a sixth conductive region, wherein the inductor is arranged in the sixth conductive region, one end of the inductor is connected to the sixth conductive region, the other end of the inductor is connected to the second pin through the third conductive region, and the second electrode of the laser chip is connected to the second pin through the sixth conductive region, the inductor, and the third conductive region.

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