Wafer probe station detection path planning method, device, equipment and probe station

Abstract

The present application relates to a method, device, computer equipment and probe station for planning a detection path of a wafer probe station. The method comprises the following steps: obtaining the central station of the needle card according to the path planning direction and the station data of the needle card; jumping columns / rows in the current row / current column of the wafer expansion diagram according to the central station of the needle card from the planned starting point of the wafer expansion diagram, and using the position of the central station as a test point when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram; when jumping to the end column / end row of the wafer expansion diagram, jumping rows / columns in the wafer expansion diagram according to the central station of the needle card; jumping columns / rows again according to the central station of the needle card in the new current row / current column after the row / column jump, and using the position of the central station as a test point when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, until the end row / end column of the wafer expansion diagram is reached; performing path planning according to the acquired test points to obtain a wafer test planning path.

Description

Technical Field

[0001] The present application relates to the field of computer control technology, and in particular to a method, device, equipment and probe station for detecting a wafer probe station. Background Art

[0002] With the continuous advancement of science and technology, the demand for chips in modern electronic technology products is gradually increasing. The requirements for chip production efficiency are also gradually increasing. In order to improve the efficiency of chip manufacturing, the probe station has also been optimized to a certain extent in various aspects. Before the probe station starts to pierce the needle, path planning is particularly important. In order to prevent wafer testing from being missed, the optimization of the row and column skipping algorithm of path planning has become inevitable. The traditional wafer probe station path planning is carried out for fixed-station type needle cards. The supported station types are relatively single, and cannot adapt to different test environments, and the convenience of wafer testing is low. Summary of the invention

[0003] Based on this, it is necessary to provide a wafer probe station detection path planning method, device, computer equipment and probe station that can improve the convenience of wafer testing in order to address the above problems.

[0004] A first aspect of the present application provides a method for planning a detection path of a wafer probe station, wherein the probe station includes a probe card for detecting a wafer, and the probe card includes more than two station types, and the method includes:

[0005] According to the path planning direction and the station data of the needle card, the central station of the needle card is obtained;

[0006] From the planned starting point of the wafer expansion diagram, jump columns / rows in the current row / column of the wafer expansion diagram according to the central station of the needle card, and when there is a test die at the corresponding position of the needle card on the wafer expansion diagram, the position of the central station is used as the test point;

[0007] When jumping to the end column / end row of the wafer expansion diagram, jumping rows / columns in the wafer expansion diagram according to the center position of the needle card;

[0008] After the row / column jump, the new current row / current column jumps again according to the center station of the needle card, and when there is a test die at the corresponding position of the needle card on the wafer expansion diagram, the position of the center station is used as the test point, until the end row / end column of the wafer expansion diagram is reached;

[0009] Path planning is performed according to the acquired test points to obtain a wafer test planning path.

[0010] In one embodiment, obtaining the center position of the needle card according to the path planning direction and the position data of the needle card includes:

[0011] According to the path planning direction and the station data of the needle card, determine the position of the stations at both ends of the row / column;

[0012] The center station of the needle clamp is calculated based on the positions of the stations at both ends of the row / column.

[0013] In one embodiment, the calculating the center station of the needle card according to the positions of the stations at both ends of the row / column includes:

[0014] Determine the center position of the row / column and the number of workstations according to the workstation positions at both ends of the row / column;

[0015] According to the number of workstations, determining whether the workstations in the row / column are even-numbered symmetrical workstations;

[0016] If yes, then select the station located downstream of the central position along the path planning direction as the central station of the needle clamp;

[0017] If not, the station where the center position is located is used as the center station of the needle clamp.

[0018] In one of the embodiments, the path planning direction is a left-right direction;

[0019] The step of jumping columns / rows in the current row / column of the wafer expansion diagram according to the central station of the needle card comprises: jumping columns in the current row of the wafer expansion diagram according to the central station of the needle card;

[0020] When jumping to the end column / end row of the wafer expansion diagram, jumping rows / columns in the wafer expansion diagram is performed according to the center position of the needle card, including: when jumping to the end column of the wafer expansion diagram, jumping rows in the wafer expansion diagram is performed according to the center position of the needle card.

[0021] In one embodiment, the step of jumping a column in a current row of the wafer expansion diagram according to a central station of the needle card includes:

[0022] Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero, and whether the number of stations projected on the X-axis of all stations of the needle card is equal to the number of stations in the X-axis direction;

[0023] If yes, then when the count reaches the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, and the number of skipped columns is the number of interval grains in adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, the number of skipped columns is 1, and the count is increased by 1;

[0024] If not, skipping is performed in the current row according to the central station of the needle card, and the number of skipped rows is the number of stations in the X-axis direction of the needle card; wherein the X-axis is parallel to the row of the wafer expansion diagram.

[0025] In one embodiment, the step of jumping a line in the wafer expansion diagram according to the center station of the needle card includes:

[0026] Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero, and whether the number of stations projected on the Y axis of all stations of the needle card is equal to the number of stations in the Y axis direction;

[0027] If yes, then when the count reaches the number of interval grains in adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is the number of interval grains in adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains in adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is 1, and the count is increased by 1;

[0028] If not, skipping is performed in the current column according to the central station of the needle card, and the number of skipped rows is the number of stations in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the column of the wafer expansion diagram.

[0029] In one of the embodiments, the path planning direction is an up-down direction;

[0030] The step of jumping columns / rows in the current row / column of the wafer expansion diagram according to the central station of the needle card comprises: jumping rows in the current column of the wafer expansion diagram according to the central station of the needle card;

[0031] When jumping to the end column / end row of the wafer expansion diagram, jumping row / column in the wafer expansion diagram is performed according to the center position of the needle card, including: when jumping to the end row of the wafer expansion diagram, jumping column in the wafer expansion diagram is performed according to the center position of the needle card.

[0032] In one embodiment, the step of jumping a row in a current column of the wafer expansion diagram according to the center station of the needle card includes:

[0033] Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero;

[0034] If yes, then when the count reaches the number of interval grains between adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is the number of interval grains between adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is 1, and the count is increased by 1;

[0035] If not, skipping is performed in the current column according to the central station of the needle card, and the number of skipped rows is the number of grains in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the column of the wafer expansion diagram.

[0036] In one embodiment, the step of jumping the wafer expansion diagram according to the center position of the needle card includes:

[0037] Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero;

[0038] If yes, then when the count reaches the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, and the number of skipped columns is the number of interval grains in adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, the number of skipped columns is 1, and the count is increased by 1;

[0039] If not, skipping is performed in the current row according to the central station of the needle card, and the number of skipped rows is the number of grains in the X-axis direction of the needle card; the X-axis is parallel to the row of the wafer expansion diagram.

[0040] A second aspect of the present application provides a wafer probe station detection path planning device, the probe station includes a probe card for detecting wafers, the probe card includes more than two station types, and the device includes:

[0041] A central station analysis module, used for obtaining the central station of the needle card according to the path planning direction and the station data of the needle card;

[0042] A jump processing module is used to jump columns / rows from a planned starting point of a wafer expansion diagram, according to a central station of the needle card, in a current row / column of the wafer expansion diagram, and sequentially use the position of the central station as a test point when a test grain exists at a corresponding position of the needle card on the wafer expansion diagram; when jumping to an end column / end row of the wafer expansion diagram, jump rows / columns in the wafer expansion diagram according to the central station of the needle card; and in a new current row / current column after the row / column jump, jump columns / rows again according to the central station of the needle card, and sequentially use the position of the central station as a test point when a test grain exists at a corresponding position of the needle card on the wafer expansion diagram, until the end row / end column of the wafer expansion diagram is reached;

[0043] The path planning module is used to perform path planning according to the acquired test points to obtain a wafer test planning path.

[0044] A third aspect of the present application provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0045] The fourth aspect of the present application provides a probe station, including a wafer carrier, a probe card and a control device, wherein the wafer carrier is used to place a wafer, and the control device connects the wafer carrier and the probe card for performing detection path planning according to the above method.

[0046] The above-mentioned wafer probe station detection path planning method, device, computer equipment and probe station, the probe station's probe card includes more than two station types, according to the path planning direction and the station data of the probe card, the central station of the probe card is obtained; from the planned starting point position of the wafer expansion diagram, the current row / current column of the wafer expansion diagram is jumped according to the central station of the needle card, and when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, the position of the center station is used as a test point; when jumping to the end column / end row of the wafer expansion diagram, the row / column is jumped according to the center station of the needle card in the wafer expansion diagram; in the new current row / current column after the row / column jump, the column / row is jumped again according to the center station of the needle card, and when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, the position of the center station is used as a test point, until the end row / end column of the wafer expansion diagram is reached; path planning is performed according to each acquired test point to obtain a wafer test planning path. By expanding the workstation types of the needle card and performing corresponding path planning optimization, it can adapt to more wafer testing environments and improve the convenience of wafer testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Flow chart of a method for planning a detection path for a wafer probe station in one embodiment;

[0048] Figure 2 A schematic diagram of various types of workstations of a needle clamp in one embodiment;

[0049] Figure 3 This is a schematic diagram of the station coordinates of a needle clamp in one embodiment;

[0050] Figure 4 It is a flow chart of obtaining the center station of the needle card according to the path planning direction and the station data of the needle card in one embodiment;

[0051] Figure 5 It is a flow chart of calculating the center station of the needle card according to the positions of the stations at both ends of the row / column in one embodiment;

[0052] Figure 6 It is a schematic diagram of the principle of determining the center station when the path planning direction is the left-right direction in one embodiment;

[0053] Figure 7 It is a schematic diagram of the principle of determining the center station when the path planning direction is the up and down direction in one embodiment;

[0054] Figure 8 This is a schematic diagram of path planning in which the test direction is "up and down" in an embodiment;

[0055] Fig. 9 This is a schematic diagram of path planning when the test direction is "left-right" in an embodiment;

[0056] Fig.10 A schematic diagram of a process flow of a row skipping rule in an embodiment;

[0057] Fig.11 This is an example diagram of skipping when the test direction is "up and down" in one embodiment;

[0058] Fig.12 This is an example diagram of skipping when the test direction is "left-right" in an embodiment;

[0059] Fig.13 A schematic diagram of a process for planning a detection path for a wafer probe station in one embodiment;

[0060] Fig.14 This is an example diagram of the detection path planning of a wafer probe station in an embodiment;

[0061] Fig.15 It is a structural block diagram of a wafer probe station detection path planning device in one embodiment;

[0062] Fig.16 1 is a diagram of the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0063] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0064] In one embodiment, a method for planning a detection path for a wafer probe station is provided, wherein the probe station includes a probe card for detecting wafers, and the probe card includes more than two types of workstations. The detection path planning of the wafer probe station can be performed by a host computer, and the obtained wafer test planning path is sent to the control device of the probe station, so that the control device can test the grains on the wafer according to the wafer test planning path; or the detection path planning of the wafer probe station can be performed directly by the control device of the probe station, and the grains on the wafer are tested according to the obtained wafer test planning path. Figure 1 As shown, the method includes:

[0065] Step S100: Acquire the center position of the needle card according to the path planning direction and the position data of the needle card.

[0066] Among them, the path planning direction is determined according to the test direction. The test direction may include "up and down form" and "left and right form". Correspondingly, the path planning direction includes the up and down direction (Y-axis direction) and the left and right direction (X-axis direction). It can be that M rows and N columns (such as 2 rows and 4 columns, 4 rows and 2 columns, etc.) of the same size of stations are set on the needle card, and each station corresponds to a die on the wafer. Probes for detecting the corresponding die on the wafer are set in all or part of the stations, thereby forming needle cards of different station types.

[0067] It should be made clear that the essence of path planning is to move the needle card on the corresponding wafer or to drive the wafer to move through the wafer stage, and to make the needle card contact the wafer. It is required to cover all positions on the wafer and there should be no duplication of the contact positions each time. Under this requirement, the premise for planning the path is that the distribution of the workstations of the needle card is regular and regular. For these regular and regular workstation distributions, path planning is performed to avoid missing or re-doing the workstations. However, the specific workstation types and quantities of needle cards that meet the prerequisites for planning the path are not unique, such as Figure 2 As shown, the station types of the needle card may include a horizontal station, a vertical station, an oblique station, a horizontal spacing station, a vertical spacing station, etc. In actual use, the station type of the needle card can be set according to the specific application scenario.

[0068] Furthermore, the station data of the needle card characterizes the relative position relationship between different stations on the needle card. By establishing a coordinate system, the coordinate position of each station can be obtained, and then the core feature data for path planning, that is, the station data of the needle card, can be obtained. Among them, the geometric center coordinates of each station can be used as the coordinate position of the station. Figure 3 As shown, the coordinate system is established with the lower leftmost station of the needle card as the origin, then the corresponding coordinates of the 8 stations of the needle card are (0, 0), (1, 0), (0, 1), (1, 1), (0, 2), (1, 2), (0, 3) and (1, 3). Through these coordinates, the following 6 core feature data of the station where the needle card is set can be calculated:

[0069] (1) The number of interval grains between adjacent stations in the same row;

[0070] (2) Number of grains along the Y axis (including both endpoints);

[0071] (3) Number of stations in the Y axis;

[0072] (4) The number of grains between adjacent stations in the same row;

[0073] (5) Number of grains in the X-axis direction (including both endpoints);

[0074] (6) Number of X-axis workstations.

[0075] According to the path planning direction and the station data of the needle card, the center station of the needle card can be determined, and the rules (row skipping rules, column skipping rules) used in subsequent path planning can be set.

[0076] Step S200: From the planned starting point of the wafer expansion diagram, jump columns / rows in the current row / column of the wafer expansion diagram according to the center station of the needle card, and when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, the position of the center station is used as the test point.

[0077] Among them, the wafer expansion map is a map after the wafer (MAP) image is expanded in rows and columns. Specifically, it can be expanded by 2 rows and 2 columns on the basis of the wafer image, or by other numbers of rows and columns. In the wafer expansion map after the row and column expansion, the size of each row and column corresponds to the size of a station of the needle card. On the basis of the wafer expansion map, the center station of the needle card is combined to jump rows / columns to avoid missing the grains on the wafer. After each jump column / row operation, it is detected whether there is a test grain at the center station of the needle card at the position corresponding to the wafer expansion map after the jump column / row, and the position of the center station when the test grain exists is recorded as a test point.

[0078] The planned starting point position of the wafer expansion diagram can be set according to the test direction. Depending on the test direction, the way to jump columns / rows in the current row / column of the wafer expansion diagram will be different. For example, if the test direction is "left-right form", you can select the first position in the upper right corner of the wafer expansion diagram as the planning starting point, use the center station of the needle card as the reference point, and jump columns from right to left in the first row of the wafer expansion diagram; if the test direction is "up-down form", you can select the first position in the upper right corner of the wafer expansion diagram as the planning starting point, use the center station of the needle card as the reference point, and jump rows from top to bottom in the first column of the wafer expansion diagram.

[0079] Step S300: When jumping to the end column / end row of the wafer expansion diagram, jumping rows / columns in the wafer expansion diagram is performed according to the center station of the needle card.

[0080] The end column / end row refers to the last column / last row of the wafer expansion diagram. When jumping columns / rows in the current row / current column of the wafer expansion diagram, it is also possible to determine whether to jump to the end column / end row of the wafer expansion diagram based on the size of the wafer expansion diagram. When jumping to the end column / end row of the wafer expansion diagram, the row / column is jumped in the wafer expansion diagram based on the center position of the needle card. For example, if the test direction is "left-right form", after the current row of the wafer expansion diagram jumps to the end column, the row is jumped with the center position of the needle card as the reference point; if the test direction is "up-down form", after the current column of the wafer expansion diagram jumps to the end row, the column is jumped with the center position of the needle card as the reference point.

[0081] Step S400: After jumping row / column, the new current row / current column jumps column / row again according to the center station of the needle card. When there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, the position of the center station is used as the test point until the end row / end column of the wafer expansion diagram is reached.

[0082] After completing the row / column jump, use the jumped row / column as the new current row / current column, repeat the operation of jumping columns / rows in the current row / current column with the center station of the needle card as the reference point, detect whether there is a test grain, record the test point, and jump to the end row / end column of the wafer expansion diagram. Use the end row / end column as the new current row / current column for detection and record the test point to complete the detection of all grains in the wafer expansion diagram.

[0083] Step S500: performing path planning according to the acquired test points to obtain a wafer test planning path.

[0084] Specifically, after completing the detection and recording of test points in all rows and columns of the wafer expansion diagram, path planning can be performed in chronological order according to the recording time of each test point to generate a wafer test planning path. In addition, the recorded test points can be screened first, such as deleting test points close to the wafer boundary, removing grains that may be damaged at the wafer boundary and not testing them, and generating a wafer test planning path based on the remaining test points. When the wafer is actually tested, the wafer stage can be controlled to drive the wafer to move according to the wafer test planning path, and each test point on the wafer can be aligned with the center station of the pin card in turn to test the test grains on the wafer.

[0085] The above-mentioned wafer probe station detection path planning method can cover all positions on the wafer and there is no duplication of the contact positions each time by expanding the station types of the needle card and performing corresponding path planning optimization, adapting to more wafer testing environments and improving the convenience of wafer testing.

[0086] It is understood that the method of determining the center position of the needle card based on the position data of the needle card is not unique. Figure 4 As shown, step S100 includes step S110 and step S120.

[0087] Step S110: Determine the positions of the stations at both ends of the row / column according to the path planning direction and the station data of the needle card. After determining the station data of the needle card, if the path planning direction is the left-right direction, the positions of the stations at both ends of the row can be determined by combining the coordinates of different stations on the needle card; if the path planning direction is the up-down direction, the positions of the stations at both ends of the column can be determined by combining the coordinates of different stations on the needle card.

[0088] Step S120: Calculate the center station of the needle card according to the positions of the stations at both ends of the row / column. Correspondingly, if the path planning direction is the left-right direction, after determining the positions of the stations at both ends of the row, the position of the center station of the needle card can be determined according to the positions of the stations at both ends of the row, as a reference point for subsequent row and column skipping; if the path planning direction is the up-down direction, after determining the positions of the stations at both ends of the column, the position of the center station of the needle card can be determined according to the positions of the stations at both ends of the column, as a reference point for subsequent row and column skipping.

[0089] Among them, Figure 5 As shown, step S120 may specifically include steps S122 to S128.

[0090] Step S122: Determine the center position of the row / column and the number of workstations according to the workstation positions at both ends of the row / column.

[0091] Step S124: According to the number of workstations, determine whether the workstations in the row / column are even-numbered symmetrical workstations; if so, execute step S126: select the workstation located downstream of the center position along the path planning direction as the center workstation of the needle card; if not, execute step S128: select the workstation at the center position as the center workstation of the needle card.

[0092] According to the different directions of path planning, the center position and the number of stations at both ends of the row or column are selected accordingly, and then the center position of the needle card is determined according to whether the station in the row or column is an even symmetrical station. The center position is used as a reference for the position of the needle card during the path planning process. When the center position is at a certain position, the position of the entire needle card can be known. Using the center position as a reference for the position of the needle card can ensure that more than half of the station span will not overflow upstream of the wafer along the path planning direction to avoid missing the detection of grains.

[0093] Specifically, in order to make the newly added station suitable for wafer testing, it is necessary to make the right side of the wafer exceed the station by no more than half. Therefore, in this application, the algorithm for determining the center station of the needle card is optimized, and the specific steps are as follows:

[0094] The calculation center station is mainly divided into two situations: X-axis direction and Y-axis direction. The steps in the X-axis direction are as follows:

[0095] First, find the maximum and minimum values ​​of the X-axis coordinates of each station of the needle card by using bubble sort. Let the X-axis coordinate of the rightmost station be X Max , the X-axis coordinate of the leftmost station is X Min , the center position is X Mid , the span of a single station on the X axis is X0, then use the formula X Mid =0.5*(X Max +X Min ), the coordinates of the center position can be calculated, and then the formula is used: Number of stations = (X Max –X Min ) / X0, calculate the number of workstations (including virtual workstations); determine whether it is an even number of symmetrical workstations. If so, select the workstation downstream of the center position along the path planning direction as the center workstation of the needle card to solve the even number symmetry problem. For example, when the path planning direction is from right to left, take the workstation to the left of the center position as the center workstation. Figure 6 If the needle card does not have an even number of symmetrical stations, the station at the center position can be used as the center station of the needle card.

[0096] The steps for the Y-axis direction are as follows: First, use bubble sort to find the maximum and minimum Y-axis coordinates of each station of the needle card. Let the Y-axis coordinate of the top station be Y Max , the Y-axis coordinate of the bottom station is Y Min, the center position is Y Mid , the span of a single station on the Y axis is Y0, then use the formula Y Mid =0.5*(Y Max +Y Min ), you can calculate the coordinates of the center position, and then use the formula: Number of stations = (Y Max –Y Min ) / Y0, calculate the number of workstations (including virtual workstations); determine whether it is an even number of symmetrical workstations. If so, select the workstation downstream of the center position along the path planning direction as the center workstation of the needle card to solve the even number symmetry problem. For example, when the path planning direction is from top to bottom, take the workstation at the lower center position as the center workstation, such as Figure 7 If the needle card does not have an even number of symmetrical stations, the station at the center position can be used as the center station of the needle card.

[0097] There are two forms of wafer testing directions. The "up and down form" means starting from the starting position and repeating: 1. Complete the planning from the current column (from top to bottom) 2. Change the column. Figure 8 , Figure 8 The direction of the arrow in the figure is the direction of the contact position during the test. The "left-right mode" is opposite to the "up-down mode". It plans the current row first, such as Fig. 9 shown.

[0098] In one embodiment, the path planning direction is the left-right direction; in step S200, the current row / current column of the wafer expansion diagram is jumped according to the center position of the needle card, including step 210: the current row of the wafer expansion diagram is jumped according to the center position of the needle card. Correspondingly, in step S300, when jumping to the end column / end row of the wafer expansion diagram, the row / column is jumped according to the center position of the needle card in the wafer expansion diagram, including step 310: when jumping to the end column of the wafer expansion diagram, the row is jumped according to the center position of the needle card in the wafer expansion diagram.

[0099] Further, step 210 may specifically include: judging whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero, and whether the number of stations projected on the X-axis of all stations of the needle card is equal to the number of stations in the X-axis direction; if so, when the count reaches the number of interval grains between adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, and the number of skipped columns is the number of interval grains between adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, the number of skipped columns is 1, and the count is increased by 1; if not, the current row is skipped according to the center station of the needle card, and the number of skipped columns is the number of stations in the X-axis direction of the needle card; wherein the X-axis is parallel to the rows of the wafer expansion diagram.

[0100] Step 310 may specifically include: determining whether the number of interval grains between adjacent stations in the same column of the needle card is greater than zero, and whether the number of stations projected on the Y-axis by all stations of the needle card is equal to the number of stations in the Y-axis direction; if so, when the count reaches the number of interval grains between adjacent stations in the same column of the needle card, skipping is performed in the current column according to the center station of the needle card, and the number of skipped rows is the number of interval grains between adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same column of the needle card, skipping is performed in the current column according to the center station of the needle card, the number of skipped rows is 1, and the count is increased by 1; if not, skipping is performed in the current column according to the center station of the needle card, and the number of skipped rows is the number of stations in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the columns of the wafer expansion diagram.

[0101] In another embodiment, the path planning direction is the up-down direction; in step S200, the current row / current column of the wafer expansion diagram is jumped according to the center position of the needle card, including step 220: the current column of the wafer expansion diagram is jumped according to the center position of the needle card. Correspondingly, in step S300, when jumping to the end column / end row of the wafer expansion diagram, the row / column of the wafer expansion diagram is jumped according to the center position of the needle card, including step 320: when jumping to the end row of the wafer expansion diagram, the column of the wafer expansion diagram is jumped according to the center position of the needle card.

[0102] Further, step 220 may specifically include: determining whether the number of interval grains between adjacent stations in the same column of the needle card is greater than zero; if so, when the count reaches the number of interval grains between adjacent stations in the same column of the needle card, jumping in the current column according to the center station of the needle card, the number of jumps is the number of interval grains between adjacent stations in the same column of the needle card, and when the count does not reach the number of interval grains between adjacent stations in the same column of the needle card, jumping in the current column according to the center station of the needle card, the number of jumps is 1, and the count is increased by 1; if not, jumping in the current column according to the center station of the needle card, the number of jumps is the number of grains in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the column of the wafer expansion diagram.

[0103] Step 320 may specifically include: determining whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero; if so, when the count reaches the number of interval grains between adjacent stations in the same row of the needle card, skipping the column in the current row according to the center station of the needle card, the number of skipped columns is the number of interval grains between adjacent stations in the same row of the needle card, and when the count does not reach the number of interval grains between adjacent stations in the same row of the needle card, skipping the column in the current row according to the center station of the needle card, the number of skipped columns is 1, and the count is increased by 1; if not, skipping the column in the current row according to the center station of the needle card, the number of skipped columns is the number of grains in the X-axis direction of the needle card; the X-axis is parallel to the row of the wafer expansion diagram.

[0104] Specifically, the skipping rule can be set to calculate the span required for each Y-direction movement. The algorithm logic is as follows: Fig.10As shown. The label in the upper right corner indicates the serial number of the eight characteristic data corresponding to the data; the count (initial zero), in the case of interlaced rows, before reaching the number of interlaced grains, jump a row and add 1 to the count; after reaching the number of interlaced grains, jump a station span and reset the count to zero. The algorithm logic of the row skipping rule includes:

[0105] (1) Determine the test direction.

[0106] (2) Determine the test direction. If the test direction is a continuous left-right direction, execute the skipping step (3).

[0107] (3) Determine whether the number of interval grains between adjacent stations in the same column of the needle card is greater than 0, and whether the number of stations projected on the Y axis of all stations of the needle card is equal to the number of stations in the Y axis. If the condition is true, determine the number of interval grains between adjacent stations in the same column in the Y direction. If the number of interval grains is less than the row skipping rule parameter (count Count), then skipping is performed in the current column according to the center station of the needle card, the number of row skipping is 1, and the count Count is increased by 1. Otherwise, skipping is performed in the current column according to the center station of the needle card, the number of row skipping is the number of interval grains between adjacent stations in the same column of the needle card, and the count Count is cleared. If the condition is false, skipping is performed in the current column according to the center station of the needle card, and the number of row skipping is the number of stations in the Y axis of the needle card.

[0108] (4) If the test direction is up and down, determine whether the number of interval grains in adjacent stations in the same column of the needle card is greater than 0. If the condition is true, determine the number of interval grains in adjacent stations in the same column in the Y direction. If the number of interval grains is less than the skip rule parameter (count Count), skip in the current column according to the center station of the needle card, the skip number is 1, and the count is increased by 1. Otherwise, skip in the current column according to the center station of the needle card, the skip number is the number of interval grains in adjacent stations in the same column of the needle card, and the count Count is cleared; if the condition is false, skip in the current column according to the center station of the needle card, and the skip number is the number of grains in the Y axis direction of the needle card.

[0109] Take the needle card set to 8 stations as an example. When the test direction is up and down, the skip line example is Fig.11 When the test direction is left and right, the skip line example is Fig.12 shown.

[0110] By setting the column skipping rule, the span required for each X-direction movement is calculated. The specific algorithm logic of the column skipping rule is similar to that of the row skipping rule, except that the rows and columns are swapped (XY swap).

[0111] Fig.13For the complete process of path planning, the test direction, the row and column jump algorithm logic, and the determination of the center station are all part of the entire path planning process. According to the test direction, the current row / column jumps the column / row, and the current position that can be measured is recorded as the test point, and then the row / column jumps, and the column / row jumps in the new current row / column and the test point is recorded until the end column / row is reached.

[0112] Fig.14 This is an example of the detection path planning of the wafer probe station. The specific steps include: ① Take the No. 6 station of the needle card as the central station, ② take the upper right corner of the wafer expansion diagram as the planning starting point, align the central station of the needle card with the planning starting point, and move according to the algorithm logic of jumping rows and columns. For example, first perform the column jump operation ③, and then jump rows after reaching the end column ④. Each time you jump a column / row, check whether there is a test grain in the position corresponding to the No. 1-8 stations of the needle card. If there is a test grain in the position corresponding to the No. 1-8 stations of the needle card, the point corresponding to the center station of the needle card is used as the test point, and the coordinates of the test point are recorded; if there is no test grain in the position corresponding to the No. 1-8 stations of the needle card, no record is made. Finally, a set of all the test points to be tested is obtained, and the planning is completed without re-binding. After recording all the test points, the wafer test planning path can be generated by placing the test points in each row in the order from right to left (or from left to right), or by placing the test points in each row in the order of first testing from right to left (or from left to right), then from left to right (or from right to left). When testing the wafer, the corresponding test point coordinates can be moved to the center station of the needle card according to the wafer test planning path to achieve contact testing.

[0113] The above-mentioned wafer probe station detection path planning method provided by this application improves the diversity of station types on the basis of traditional machines, so that wafer testing can adapt to a variety of environments. The center station algorithm is optimized to match the use of the newly added station in wafer testing. In addition, the row and column skipping algorithm is also optimized to be compatible with the row and column skipping of the newly added station during wafer testing.

[0114] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0115] Based on the same inventive concept, the embodiment of the present application also provides a wafer probe station detection path planning device for implementing the wafer probe station detection path planning method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more wafer probe station detection path planning device embodiments provided below can refer to the limitations of the wafer probe station detection path planning method above, and will not be repeated here.

[0116] In one embodiment, Fig.15 As shown, a wafer probe station detection path planning device is also provided, the probe station includes a needle card for detecting wafers, the needle card includes more than two station types, the device includes: a central station analysis module 100, a jump processing module 200 and a path planning module 300, wherein:

[0117] The central station analysis module 100 is used to obtain the central station of the needle card according to the path planning direction and the station data of the needle card.

[0118] The jump processing module 200 is used to jump columns / rows in the current row / current column of the wafer expansion diagram according to the center station of the needle card from the planned starting point of the wafer expansion diagram, and sequentially use the position of the center station as a test point when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram; when jumping to the end column / end row of the wafer expansion diagram, jump rows / columns in the wafer expansion diagram according to the center station of the needle card; jump columns / rows again according to the center station of the needle card in the new current row / current column after the row / column jump, and sequentially use the position of the center station as a test point when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, until the end row / end column of the wafer expansion diagram is reached;

[0119] The path planning module 300 is used to perform path planning according to the acquired test points to obtain a wafer test planning path.

[0120] In one embodiment, the center station analysis module 100 determines the positions of the stations at both ends of the row / column according to the path planning direction and the station data of the needle card; and calculates the center station of the needle card according to the positions of the stations at both ends of the row / column.

[0121] In one embodiment, the center workstation analysis module 100 determines the center position of the row / column and the number of workstations based on the positions of the workstations at both ends of the row / column; based on the number of workstations, determines whether the workstations in the row / column are even-numbered symmetrical workstations; if so, selects the workstation located downstream of the center position along the path planning direction as the center workstation of the needle card; if not, selects the workstation where the center position is located as the center workstation of the needle card.

[0122] In one embodiment, the path planning direction is left and right; the jump processing module 200 jumps columns in the current row of the wafer expansion diagram according to the center position of the needle card; and when jumping to the end column of the wafer expansion diagram, jumps rows in the wafer expansion diagram according to the center position of the needle card.

[0123] In one embodiment, the jump processing module 200 determines whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero, and the number of stations projected on the X-axis of all stations of the needle card is equal to the number of stations in the X-axis direction; if so, when the count reaches the number of interval grains between adjacent stations in the same row of the needle card, the current row is jumped according to the center station of the needle card, and the number of jumps is the number of interval grains between adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same row of the needle card, the current row is jumped according to the center station of the needle card, the number of jumps is 1, and the count is increased by 1; if not, the current row is jumped according to the center station of the needle card, and the number of jumps is the number of stations in the X-axis direction of the needle card; wherein, the X-axis is parallel to the rows of the wafer expansion diagram.

[0124] In one embodiment, the jump processing module 200 determines whether the number of interval grains between adjacent stations in the same column of the needle card is greater than zero, and the number of stations projected on the Y-axis of all stations of the needle card is equal to the number of stations in the Y-axis direction; if so, when the count reaches the number of interval grains between adjacent stations in the same column of the needle card, a row jump is performed in the current column according to the center station of the needle card, and the number of row jumps is the number of interval grains between adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same column of the needle card, a row jump is performed in the current column according to the center station of the needle card, the number of row jumps is 1, and the count is increased by 1; if not, a row jump is performed in the current column according to the center station of the needle card, and the number of row jumps is the number of stations in the Y-axis direction of the needle card; wherein, the Y-axis is parallel to the columns of the wafer expansion diagram.

[0125] In one embodiment, the path planning direction is the up and down direction; the jump processing module 200 jumps rows in the current column of the wafer expansion diagram according to the center position of the needle card; and when jumping to the end row of the wafer expansion diagram, jumps columns in the wafer expansion diagram according to the center position of the needle card.

[0126] In one embodiment, the jump processing module 200 determines whether the number of interval grains between adjacent stations in the same column of the needle card is greater than zero; if so, when the count reaches the number of interval grains between adjacent stations in the same column of the needle card, the current column is jumped according to the center station of the needle card, and the number of jumps is the number of interval grains between adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same column of the needle card, the current column is jumped according to the center station of the needle card, the number of jumps is 1, and the count is increased by 1; if not, the current column is jumped according to the center station of the needle card, and the number of jumps is the number of grains in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the column of the wafer expansion diagram.

[0127] In one embodiment, the jump processing module 200 determines whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero; if so, when the count reaches the number of interval grains between adjacent stations in the same row of the needle card, the current row is jumped according to the center station of the needle card, and the number of jumps is the number of interval grains between adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same row of the needle card, the current row is jumped according to the center station of the needle card, the number of jumps is 1, and the count is increased by 1; if not, the current row is jumped according to the center station of the needle card, and the number of jumps is the number of grains in the X-axis direction of the needle card; the X-axis is parallel to the row of the wafer expansion diagram.

[0128] Each module in the above-mentioned wafer probe station detection path planning device can be implemented in whole or in part by software, hardware and their combination. The above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.

[0129] In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as follows: Fig.16As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. Among them, the processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a wafer probe station detection path planning method is implemented. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0130] Those skilled in the art will understand that Fig.16 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0131] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0132] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of the above method are implemented.

[0133] In one embodiment, a computer program product is provided, comprising a computer program, which implements the steps of the above method when executed by a processor.

[0134] In one embodiment, a probe station is also provided, including a wafer carrier, a probe card and a control device, wherein the wafer carrier is used to place a wafer, and the control device connects the wafer carrier and the probe card for performing detection path planning according to the above method.

[0135] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0136] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0137] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A method for planning a detection path of a wafer probe station, wherein the probe station includes a probe card for detecting a wafer, and the probe card includes more than two station types, characterized in that: The method includes: According to the path planning direction and the station data of the needle card, the central station of the needle card is obtained; Align the central station of the needle card from the planned starting point of the wafer expansion diagram, jump the column / row in the current row / column of the wafer expansion diagram according to the central station of the needle card, and use the position of the central station as the test point when there is a test die at the corresponding position of the needle card on the wafer expansion diagram; When jumping to the end column / end row of the wafer expansion diagram, jumping rows / columns in the wafer expansion diagram according to the center position of the needle card; After the row / column jump, the new current row / current column jumps again according to the center station of the needle card, and when there is a test die at the corresponding position of the needle card on the wafer expansion diagram, the position of the center station is used as the test point, until the end row / end column of the wafer expansion diagram is reached; Path planning is performed according to the acquired test points to obtain a wafer test planning path.

2. The method according to claim 1, characterized in that The step of obtaining the central station of the needle card according to the path planning direction and the station data of the needle card includes: According to the path planning direction and the station data of the needle card, determine the position of the stations at both ends of the row / column; The center station of the needle clamp is calculated based on the positions of the stations at both ends of the row / column.

3. The method according to claim 2, characterized in that The step of calculating the center station of the needle card according to the positions of the stations at both ends of the row / column includes: Determine the center position of the row / column and the number of workstations according to the workstation positions at both ends of the row / column; According to the number of workstations, determining whether the workstations in the row / column are even-numbered symmetrical workstations; If yes, then select the station located downstream of the central position along the path planning direction as the central station of the needle clamp; If not, the station where the center position is located is used as the center station of the needle clamp.

4. The method according to claim 1, characterized in that: The path planning direction is the left and right direction; The step of jumping columns / rows in the current row / column of the wafer expansion diagram according to the central station of the needle card comprises: jumping columns in the current row of the wafer expansion diagram according to the central station of the needle card; When jumping to the end column / end row of the wafer expansion diagram, jumping rows / columns in the wafer expansion diagram is performed according to the center position of the needle card, including: when jumping to the end column of the wafer expansion diagram, jumping rows in the wafer expansion diagram is performed according to the center position of the needle card.

5. The method according to claim 4, characterized in that The step of jumping columns in the current row of the wafer expansion diagram according to the central station of the needle card includes: Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero, and whether the number of stations projected on the X-axis of all stations of the needle card is equal to the number of stations in the X-axis direction; If yes, then when the count reaches the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, and the number of skipped columns is the number of interval grains in adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, the number of skipped columns is 1, and the count is increased by 1; If not, skipping is performed in the current row according to the central station of the needle card, and the number of skipped rows is the number of stations in the X-axis direction of the needle card; wherein the X-axis is parallel to the row of the wafer expansion diagram.

6. The method according to claim 4 or 5, characterized in that: The step of jumping a line in the wafer expansion diagram according to the central station of the needle card comprises: Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero, and whether the number of stations projected on the Y axis of all stations of the needle card is equal to the number of stations in the Y axis direction; If yes, then when the count reaches the number of interval grains in adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is the number of interval grains in adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains in adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is 1, and the count is increased by 1; If not, skipping is performed in the current column according to the central station of the needle card, and the number of skipped rows is the number of stations in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the column of the wafer expansion diagram.

7. The method according to claim 1, characterized in that The path planning direction is the up and down direction; The step of jumping columns / rows in the current row / column of the wafer expansion diagram according to the central station of the needle card comprises: jumping rows in the current column of the wafer expansion diagram according to the central station of the needle card; When jumping to the end column / end row of the wafer expansion diagram, jumping row / column in the wafer expansion diagram is performed according to the center position of the needle card, including: when jumping to the end row of the wafer expansion diagram, jumping column in the wafer expansion diagram is performed according to the center position of the needle card.

8. The method according to claim 7, characterized in that The step of skipping a row in a current column of the wafer expansion diagram according to the central station of the needle card comprises: Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero; If yes, then when the count reaches the number of interval grains between adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is the number of interval grains between adjacent stations in the same column of the needle card; and when the count does not reach the number of interval grains between adjacent stations in the same column of the needle card, a row is skipped in the current column according to the center station of the needle card, and the number of skipped rows is 1, and the count is increased by 1; If not, skipping is performed in the current column according to the central station of the needle card, and the number of skipped rows is the number of grains in the Y-axis direction of the needle card; wherein the Y-axis is parallel to the column of the wafer expansion diagram.

9. The method according to claim 7 or 8, characterized in that: Jumping in the wafer expansion diagram according to the central station of the needle card includes: Determine whether the number of interval grains between adjacent stations in the same row of the needle card is greater than zero; If yes, then when the count reaches the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, and the number of skipped columns is the number of interval grains in adjacent stations in the same row of the needle card; and when the count does not reach the number of interval grains in adjacent stations in the same row of the needle card, the current row is skipped according to the center station of the needle card, the number of skipped columns is 1, and the count is increased by 1; If not, skipping is performed in the current row according to the central station of the needle card, and the number of skipped rows is the number of grains in the X-axis direction of the needle card; the X-axis is parallel to the row of the wafer expansion diagram.

10. A wafer probe station detection path planning device, the probe station includes a probe card for detecting wafers, the probe card includes more than two station types, characterized in that: The device includes: A central station analysis module, used for obtaining the central station of the needle card according to the path planning direction and the station data of the needle card; A jump processing module is used to align the central station of the needle card from the planned starting point position of the wafer expansion diagram, jump columns / rows in the current row / current column of the wafer expansion diagram according to the central station of the needle card, and use the position of the central station as a test point when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram; when jumping to the end column / end row of the wafer expansion diagram, jump rows / columns in the wafer expansion diagram according to the central station of the needle card; jump columns / rows again according to the central station of the needle card in the new current row / current column after jumping rows / columns, and use the position of the central station as a test point when there is a test grain at the corresponding position of the needle card on the wafer expansion diagram, until the end row / end column of the wafer expansion diagram is reached; The path planning module is used to perform path planning according to the acquired test points to obtain a wafer test planning path.

11. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 9 are implemented.

12. A probe station, characterized in that: It includes a wafer stage, a needle card and a control device, wherein the wafer stage is used to place a wafer, and the control device connects the wafer stage and the needle card and is used to plan a detection path according to the method described in any one of claims 1 to 9.

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