Diode detection apparatus, method, system, and photovoltaic module production method

Abstract

The application relates to a diode detection device, method and system, and a photovoltaic module production method. The diode detection device comprises a magnetic field detection module and an analysis module. The magnetic field detection module is used for detecting the magnetic field information around the diode to be detected in an electrified state. The analysis module is connected with the magnetic field detection module and is used for determining the breakdown result of the diode to be detected according to the magnetic field information. Therefore, the magnetic field information around the diode to be detected in the electrified state is analyzed by the diode detection device in the application, so that the breakdown detection of the diode to be detected can be realized, and the diode packaged in the on-line box does not need to be disassembled, dug, and wired, the breakdown state of one diode can be independently judged, and the on-line box is not damaged. Therefore, the diode detection device in the application can be suitable for the diode to be detected packaged in the on-line box.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic power generation, in particular to a diode detection device, method and system, and a photovoltaic module production method. BACKGROUND

[0002] In the technical field of photovoltaic power generation, photovoltaic modules will be shaded in actual operation, at which time the cell changes from the original power generation state to a load, and a large amount of heat is generated after the current flows through the load, thereby damaging the module, i.e. hot spot effect. In order to protect the module from the hot spot, a diode is usually installed on the photovoltaic module. The diode is in a reverse bias state in normal operation, and a current of tens of microamperes will flow through the diode, and the diode almost has no heating condition. However, due to poor chip supply, high welding temperature, and electrostatic voltage pulse, the diode may have a slight breakdown or complete breakdown. The diode in parallel with the module after breakdown will flow a large current, and will be burned out after a long time.

[0003] Therefore, it is necessary to detect the breakdown of the diode during the production process of the photovoltaic module. For diodes not connected to the photovoltaic module, a multimeter or other instruments can be used to determine whether the diode is broken down. However, on the production line, the diode is completely packaged in a line box, and only the positive and negative line boxes have exposed terminal ports, so it is impossible to determine whether a single diode is broken down by a multimeter. SUMMARY

[0004] Therefore, it is necessary to detect the breakdown of the diode during the production process of the photovoltaic module. For diodes not connected to the photovoltaic module, a multimeter or other instruments can be used to determine whether the diode is broken down. However, on the production line, the diode is completely packaged in a line box, and only the positive and negative line boxes have exposed terminal ports, so it is impossible to determine whether a single diode is broken down by a multimeter.

[0005] In a first aspect, the present application provides a diode detection device, comprising:

[0006] A magnetic field detection module is configured to detect magnetic field information around the diode to be tested when the diode to be tested is in a powered state.

[0007] An analysis module is connected to the magnetic field detection module and configured to determine the breakdown result of the diode to be tested according to the magnetic field information.

[0008] In one embodiment, the magnetic field detection module is arranged in a direction perpendicular to the current flow direction of the diode to be tested, and is spaced apart from the diode to be tested by a preset distance. The magnetic field detection module is configured to detect the magnetic induction intensity at the position.

[0009] The analysis module is configured to determine the breakdown result of the diode to be tested according to the magnetic induction intensity and the preset distance.

[0010] In one of the embodiments, the to-be-tested diode is a diode in a photovoltaic module, and is in the power-on state when the photovoltaic module performs photoelectric conversion; the diode detection device further comprises:

[0011] A light-emitting module is configured to provide light with a preset light intensity to the photovoltaic module connected with the to-be-tested diode.

[0012] In one of the embodiments, the diode detection device further comprises:

[0013] A heating module is configured to heat the to-be-tested diode.

[0014] In one of the embodiments, the breakdown result includes a slight breakdown; and the analysis module is configured to determine the breakdown result of the to-be-tested diode as the slight breakdown when the magnetic field information satisfies a first preset condition.

[0015] In one of the embodiments, the magnetic field information includes a magnetic induction intensity; and the first preset condition includes that the magnetic induction intensity is less than a first preset magnetic induction intensity and greater than or equal to a second preset magnetic induction intensity.

[0016] In one of the embodiments, the breakdown result includes a complete breakdown; and the analysis module is configured to determine the breakdown result of the to-be-tested diode as the complete breakdown when the magnetic field information satisfies a second preset condition.

[0017] In one of the embodiments, the magnetic field information includes a magnetic induction intensity; and the second preset condition includes that the magnetic induction intensity is greater than or equal to a first preset magnetic induction intensity.

[0018] In one of the embodiments, the magnetic field detection module includes a Hall element.

[0019] In a second aspect, the application further provides a diode detection method, comprising:

[0020] detecting magnetic field information around a to-be-tested diode in a power-on state;

[0021] determining a breakdown result of the to-be-tested diode according to the magnetic field information.

[0022] In one of the embodiments, the to-be-tested diode is a diode in a photovoltaic module, and is in the power-on state when the photovoltaic module performs photoelectric conversion; before detecting the magnetic field information around the to-be-tested diode in the power-on state, the method further comprises:

[0023] providing light with a preset light intensity to the photovoltaic module connected with the to-be-tested diode.

[0024] In one of the embodiments, before detecting the magnetic field information around the to-be-tested diode in the power-on state, the method further comprises:

[0025] heating the to-be-tested diode. In one embodiment, the breakdown result includes a slight breakdown; and the determining the breakdown result of the to-be-tested diode according to the magnetic field information includes:

[0026] determining the breakdown result of the to-be-tested diode as the slight breakdown when the magnetic field information meets a first preset condition.

[0027] In one embodiment, the breakdown result includes a complete breakdown; and the determining the breakdown result of the to-be-tested diode according to the magnetic field information includes:

[0028] determining the breakdown result of the to-be-tested diode as the complete breakdown when the magnetic field information meets a second preset condition.

[0029] In a third aspect, the present application provides a photovoltaic module production method, comprising:

[0030] performing EL testing on a to-be-shipped photovoltaic module;

[0031] detecting a diode in the to-be-shipped photovoltaic module by using the above diode detection device or by using the above diode detection method.

[0032] In a fourth aspect, the present application provides a diode detection system, comprising:

[0033] a plurality of to-be-tested diodes;

[0034] a plurality of diode detection devices for respectively detecting the plurality of to-be-tested diodes; wherein at least part of the diode detection devices are the above devices.

[0035] In one embodiment, at least part of the to-be-tested diodes are arranged in a photovoltaic module.

[0036] The above diode detection device, method, system and photovoltaic module production method, the diode detection device includes a magnetic field detection module and an analysis module, the magnetic field detection module is used for detecting the magnetic field information around the to-be-tested diode in the powered state; the analysis module is connected with the magnetic field detection module, and is used for determining the breakdown result of the to-be-tested diode according to the magnetic field information. Therefore, the magnetic field information around the to-be-tested diode in the powered state is analyzed by the diode detection device in the present application, that is, the breakdown detection of the to-be-tested diode can be realized, without disassembling, digging and leading the diode packaged in the on-line box, the breakdown state of one diode can be judged independently, and the on-line box is not damaged, so that the diode detection device in the present application can be suitable for the to-be-tested diode packaged in the on-line box. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 Fig. 1 is a schematic diagram of a diode detection device according to an embodiment of the present application;

[0038] Figure 2 Fig. 2 is a schematic diagram of a magnetic field detection circuit of a Hall element according to an embodiment of the present application;

[0039] Figure 3 Fig. 3 is a schematic diagram of an electro-magnetic effect according to an embodiment of the present application;

[0040] Figure 4 Fig. 4 is a schematic diagram of a Hall element testing the magnetic field information around a diode under test in a conducting state according to an embodiment of the present application;

[0041] Figure 5 Fig. 5 is a schematic diagram of a diode detection device according to an embodiment of the present application;

[0042] Figure 6 Fig. 6 is a schematic diagram of a diode detection method according to an embodiment of the present application;

[0043] Figure 7 Fig. 7 is a schematic diagram of a photovoltaic module production method according to an embodiment of the present application;

[0044] Figure 8 Fig. 8 is a schematic diagram of a photovoltaic module production method according to an embodiment of the present application;

[0045] Figure 9 Fig. 9 is a schematic diagram of a diode detection system according to an embodiment of the present application.

[0046] BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Diode detection system: 10; diode detection device: 100; magnetic field detection module: 110; Hall element: 111; analysis module: 120; light emitting module: 130; heating module: 140; photovoltaic module: 200; diode under test: 210; junction box: 220; cell: 230. DETAILED DESCRIPTION

[0048] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a number of different ways beyond the specific embodiments described and it is therefore contemplated to cover all such modifications as fall within the scope of the present application. It should be noted that the specific embodiments of the present application do not limit the scope of the present application.

[0049] In addition, the terms "first", "second", "third", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or an ordered ranking of the indicated technical features. Thus, features defined with "first", "second" or "third" can include, explicitly or implicitly, at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise explicitly and specifically limited.

[0050] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting", "fixing" and the like should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0051] In one embodiment, as shown in one of the structural schematic diagrams of the diode detection device 100, Figure 1 The diode detection device 100 includes a magnetic field detection module 110 and an analysis module 120. The magnetic field detection module 110 is used to detect the magnetic field information around the to-be-detected diode 210 in the energized state. The analysis module 120 is connected with the magnetic field detection module 110 and is used to determine the breakdown result of the to-be-detected diode 210 according to the magnetic field information.

[0052] It can be understood that when the to-be-detected diode 210 is in reverse bias, only about tens of microamperes of current will flow in the to-be-detected diode 210 in the energized state, but if the to-be-detected diode 210 has already broken down, the broken diode will flow a larger current than the normal diode. According to the electromagnetic induction law, the magnetic induction intensity around the broken diode will be much larger than that around the normal diode, so the magnetic field information around the to-be-detected diode 210 in the energized state can be detected, and the breakdown result of the to-be-detected diode 210 can be determined according to the magnetic field information. It can be understood that based on the electromagnetic induction law, the magnetic field information can be magnetic flux, magnetic field strength, magnetic induction intensity, etc.

[0053] The magnetic field detection module 110 can be any detection device or detection circuit capable of detecting magnetic field information, such as a Hall element. The Hall element can recognize a magnetic field range of 1 microtesla to 10 tesla and can sensitively sense the change of the magnetic field, so it can accurately detect the magnetic induction intensity around the to-be-detected diode 210. For example, the magnetic field detection module 110 is a Hall element, as shown in Figure 2The structure diagram of the magnetic field detection circuit of the Hall element 111 is shown. When detecting the magnetic field information around the diode 210 in the conduction state, the power supply U is first applied to the Hall element 111 to provide the electron flow q. Under the action of the external magnetic field M, the electron flow q is moved to one side under the action of the Lorentz force, and a large number of positive charges are gathered on the other side. A potential difference U is formed on both sides of the Hall element 111 h The greater the magnetic field, the greater the potential difference U h The greater the potential difference U h The breakdown of the diode can reflect the size of the magnetic field.

[0054] The analysis module 120 can be any chip capable of information analysis, such as MCU (MicroController Unit), single-chip microcomputer, etc. In other embodiments, the analysis module 120 can also be connected with other indication modules to send the breakdown result to the indication module to make the indication module indicate the breakdown result. For example, the analysis module 120 is connected with a display module, which can be an LED lamp, a display screen, etc. If the display module is an LED lamp, the lighting of the LED lamp indicates that the diode under test 210 has broken down. If there are multiple breakdown results, different colors of LED lamps can be used to indicate different breakdown results. If the display module is a display screen, the breakdown result can be indicated in the form of text or image on the display screen. For another example, the analysis module 120 is connected with a buzzer, and the breakdown result can be indicated by the frequency and duration of the buzzer, without limitation.

[0055] The diode detection device 100 in the embodiment analyzes the magnetic field information around the diode under test 210 in the conduction state, thereby realizing the breakdown detection of the diode under test 210, without the need to disassemble, dig, and lead the diode packaged in the line box. The breakdown state of one diode can be independently determined, and the line box will not be damaged. Therefore, the diode detection device 100 of the present application can be applied to the diode under test 210 packaged in the line box.

[0056] In one embodiment, the magnetic field detection module 110 is arranged in a direction perpendicular to the current flow direction of the diode under test 210 and at a predetermined distance from the diode under test 210. The magnetic field detection module 110 is used to detect the magnetic induction intensity at the location. The analysis module 120 is used to determine the breakdown result of the diode under test 210 according to the magnetic induction intensity and the predetermined distance.

[0057] In the embodiment, the electric-magnetic effect diagram shown in Figure 3 and the schematic diagram of the Hall element for testing the magnetic field information around the diode under test 210 in the conduction state shown in Figure 4 , wherein theFigure 4 The diode 210 to be tested is arranged in the junction box 220. It is understood that if the diode 210 to be tested breaks down, a current I flows through the diode 210 to be tested after the breakdown. Figure 3 In the figure, the charged conductor L is used to replace the diode 210 after breakdown. According to the Biot-Savrey law, the magnetic induction intensity B at the test point A can be obtained. According to the formula It can be seen that when detecting the magnetic field information around the diode under test 210 when it is energized, the closer the distance to the diode under test 210 is, the stronger the magnetic induction intensity B. In other words, the smaller the distance a (i.e., the preset distance) between the test point A and the test diode is, the greater the magnetic induction intensity B. For example, the preset distance in this embodiment can be 1mm to 5mm, such as 1mm, 1.5mm, 2mm, 2.5mm, 3mm, 3.5mm, 4mm, 4.5mm, 5mm, etc. Therefore, to improve the accuracy of the test, in this embodiment, the magnetic field detection module 110 is positioned in a direction perpendicular to the current flow of the diode under test 210 and at a preset distance from the diode under test 210. At this time, the direction of the magnetic field lines will flow through the magnetic field detection module 110 to the greatest extent, which is conducive to improving the stability and anti-interference performance of the test. At this time, the analysis module 120 further obtains the corresponding breakdown result based on the magnetic field information obtained by the magnetic field detection module 110 at the preset distance from the diode under test 210. For example, if the breakdown results include mild breakdown and complete breakdown, the magnetic induction intensity corresponding to mild breakdown is greater than the magnetic induction intensity corresponding to normal conditions, and the magnetic induction intensity corresponding to complete breakdown is greater than the magnetic induction intensity corresponding to mild breakdown. Therefore, the corresponding breakdown result can be determined based on the magnetic induction intensity of a normal diode at the same preset distance from the diode to be tested 210 and the magnetic induction intensity under different breakdown conditions.

[0058] In one embodiment, Figure 5 In the second structural schematic diagram of the diode detection device 100 shown, the diode 210 to be tested is a diode in the photovoltaic component 200 and is in a power-on state when the photovoltaic component 200 performs photoelectric conversion; the diode detection device 100 also includes a light-emitting module 130, which is used to provide light of a preset light intensity to the photovoltaic component 200 to which the diode 210 to be tested is connected.

[0059] In this embodiment, the to-be-tested diode 210 is a diode in the photovoltaic module 200, and thus the leakage current flowing through the to-be-tested diode 210 mainly comes from the cell in the photovoltaic module 200. Therefore, in order to sufficiently ensure the short-circuit current value of the photovoltaic module 200, the light-emitting module 130 is arranged in the diode detection device 100 in this embodiment to provide a preset light intensity to the photovoltaic module 200, so as to improve the accuracy of the breakdown detection result of the to-be-tested diode 210. The preset light intensity can be any light intensity greater than or equal to a set threshold, for example, a light intensity greater than or equal to 1000 W / m 2 .

[0060] In one embodiment, referring again to FIG. 2, the diode detection device 100 further includes a heating module 140 configured to heat the to-be-tested diode 210. Figure 5

[0061] In this embodiment, in order to improve the current flowing through the to-be-tested diode 210 as much as possible after breakdown, the diode detection device 100 in this embodiment further includes the heating module 140 configured to heat the to-be-tested diode 210. Specifically, the heating module 140 continuously heats the to-be-tested diode 210 at a preset temperature for a preset time length. For example, the to-be-tested diode 210 is continuously heated at a temperature of at least 75°C for 10 s. At this time, the resistance of the breakdown diode will decrease significantly, and the current flowing through the to-be-tested diode 210 after breakdown will be larger, so that the magnetic field around the to-be-tested diode 210 will be more easily detected. The leakage current of the normal to-be-tested diode 210 is very small, and the magnetic field can be ignored. Therefore, the diode detection device 100 in this embodiment can more accurately detect the breakdown result of the to-be-tested diode 210. It should be understood that the above-mentioned continuous heating time length and preset temperature are only random examples for facilitating explanation and illustration, and in other examples, the continuous heating time length and preset temperature can be flexibly set according to actual needs, and are not limited thereto.

[0062] In one embodiment, the breakdown result includes a slight breakdown, and the analysis module 120 is configured to determine that the breakdown result of the to-be-tested diode 210 is a slight breakdown when the magnetic field information satisfies a first preset condition.

[0063] ​Currently, the primary methods used on production lines to determine whether a diode has completely broken down are IV testing (current-voltage characteristic curve testing) and EL testing (electro-luminescence testing). If one diode completely breaks down during IV testing (equivalent to a short circuit), the module's open-circuit voltage will drop to two-thirds of its original value. Similarly, if two diodes completely break down, the open-circuit voltage will drop to one-third, and if three diodes completely break down, the open-circuit voltage will be zero. During EL testing, if a diode completely breaks down, the cell corresponding to that diode will exhibit no electroluminescence. These differences can be used to determine whether a diode has completely broken down. However, the above method can only determine the case of complete breakdown, that is, the diode is short-circuited and the resistance is close to 0. In fact, the breakdown state of the diode is mostly a mild breakdown state, that is, there is a resistance of several hundred ohms. The diode under this breakdown level and the normal diode perform almost the same in IV and EL tests, and it is impossible to screen out the mild breakdown diode. Moreover, the mild breakdown diode connected in parallel to the component is very easy to burn out outdoors. Therefore, it is necessary to design a detection method in the photovoltaic component 200 production line to determine whether the diode is broken down, especially the mild breakdown. In this embodiment, the magnetic field information is explained as the magnetic induction intensity. Correspondingly, the first preset condition can be that the magnetic induction intensity is less than the first preset magnetic induction intensity and greater than or equal to the second preset magnetic induction intensity. Among them, the first preset magnetic induction intensity can be the magnetic induction intensity corresponding to the complete breakdown of the diode 210 to be tested, and the second preset magnetic field induction intensity can be the magnetic induction intensity corresponding to the breakdown of the diode 210 to be tested. The first preset magnetic induction intensity is greater than the second preset magnetic induction intensity.

[0064] In one embodiment, the breakdown result includes complete breakdown; the analysis module 120 is configured to determine that the breakdown result of the diode under test 210 is complete breakdown when the magnetic field information satisfies a second preset condition. Continuing with the example of the magnetic field information being magnetic induction intensity, the second preset condition may be that the magnetic induction intensity is greater than or equal to the first preset magnetic induction intensity.

[0065] In one embodiment, Figure 6 The diode detection method shown is a flow chart of the diode detection method, which includes the following steps S602 to S604.

[0066] Step S602 , detecting magnetic field information around the diode to be tested when the diode is in a powered-on state.

[0067] The diode to be tested is a diode in a photovoltaic module and is in a power-on state when the photovoltaic module performs photoelectric conversion. Before detecting the magnetic field information around the diode to be tested when it is in the power-on state, it also includes providing light of a preset light intensity to the photovoltaic module connected to the diode to be tested.

[0068] Furthermore, to reduce the resistance of the diode under test when it is energized and increase the current flowing through it during breakdown, the diode under test may be heated before detecting the magnetic field information surrounding the diode under test when it is energized. Specifically, the diode under test may be heated at a preset temperature for a preset time, for example, at 70 degrees Celsius for 10 seconds.

[0069] Step S604: determining the breakdown result of the diode to be tested according to the magnetic field information.

[0070] The breakdown results include mild breakdown and complete breakdown; therefore, determining the breakdown result of the diode under test based on the magnetic field information includes: determining that the breakdown result of the diode under test is mild breakdown when the magnetic field information meets a first preset condition; and determining that the breakdown result of the diode under test is complete breakdown when the magnetic field information meets a second preset condition. For example, if the magnetic field information is magnetic induction intensity, the first preset condition may be that the magnetic induction intensity is less than the first preset magnetic induction intensity and greater than or equal to the second preset magnetic induction intensity; the second preset condition may be that the magnetic induction intensity is greater than or equal to the first preset magnetic induction intensity. The first preset magnetic induction intensity may be the magnetic induction intensity corresponding to a complete breakdown of the diode under test, and the second preset magnetic field induction intensity may be the magnetic induction intensity corresponding to a breakdown of the diode under test. The first preset magnetic induction intensity is greater than the second preset magnetic induction intensity.

[0071] In one embodiment, Figure 7 The schematic flow chart of the photovoltaic module production method shown in FIG. 1 includes the following steps S702 to S7041 or S702 to S7042.

[0072] Step S702: Performing EL testing on the photovoltaic modules to be shipped.

[0073] Among them, as attached Figure 8 The simplified process flow diagram of the photovoltaic module production method shown in the figure can also include other necessary processes related to diodes in the photovoltaic module before the EL test of the photovoltaic module to be shipped, such as installing the junction box, welding, potting, curing, installing the box cover, IV testing, insulation withstand voltage testing, EL testing, etc. The welding, IV testing, and EL testing steps can easily lead to diode breakdown. Therefore, adding the diode detection method of any of the above embodiments to the photovoltaic module to be shipped can prevent the production of broken diodes.

[0074] Specifically, when the photovoltaic module to be shipped out is finished with the EL test, the test tool is removed, and the two ends of the photovoltaic module to be shipped out are in an open circuit state. If the diode in the photovoltaic module to be shipped out is in a normal state, the reverse voltage of the photovoltaic module to be shipped out will cause a current of about tens of microamperes to flow through the diode to be tested, and there is almost no magnetic field near the photovoltaic module. If the diode to be tested in the photovoltaic module to be shipped out is completely broken down, the diode to be tested in the completely broken down state can be regarded as a short circuit, and the resistance is close to 0. The short circuit current of the photovoltaic module flows through the diode to be tested, and according to the electromagnetic effect, a large magnetic field is generated near the broken diode. The magnetic field can be easily measured by the magnetic field detection module. If the diode to be tested is slightly broken down, the diode to be tested at this time can be regarded as a resistance of several hundred ohms, and a current of about tens to hundreds of milliamperes will also flow through the resistance. The current also generates a small magnetic field. Although the magnetic field is smaller than that of the diode to be tested in the completely broken down state, it is still significantly different from the magnetic field generated by the normal diode, and can be measured by the magnetic field detection module.

[0075] In step S7041, the diode in the photovoltaic module to be shipped out is detected by the diode detection device 100 in any of the above embodiments. Alternatively, in step S7042, the diode is detected by steps S602 to S604.

[0076] With reference to the simple flowchart of the photovoltaic module production method as shown in Figure 8 After the diode to be tested is detected by the diode detection method in any of the above embodiments, the remaining procedures can be performed to complete the production of the photovoltaic module.

[0077] It should be understood that, although each step in the flowchart involved in each of the above embodiments is displayed in sequence according to the arrow, these steps are not necessarily executed in the order indicated by the arrow. Unless otherwise specified herein, the execution of these steps is not strictly limited in sequence, and these steps can be executed in other orders. Moreover, at least part of the steps in the flowchart involved in each of the above embodiments can include multiple steps or stages, which are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed in rotation or alternation with at least part of other steps or stages in other steps.

[0078] In one embodiment, as Figure 9The structure diagram of the diode detection system 10 is shown, and the application further provides a diode detection system 10, which comprises a plurality of to-be-tested diodes 210 and a plurality of diode detection devices 100, and the plurality of diode detection devices 100 are used for detecting the plurality of to-be-tested diodes 210 respectively; wherein, at least part of the diode detection devices 100 are the diode detection devices 100 in any one of the above embodiments.

[0079] In one embodiment, at least part of the to-be-tested diodes 210 are arranged in the photovoltaic module 200. Exemplarily, the to-be-tested diodes 210 are arranged in the photovoltaic module 200 in the form of a plurality of strings. Figure 9 A structure diagram of three to-be-tested diodes 210 (to-be-tested diode 210#1, to-be-tested diode 210#2, to-be-tested diode 210#3) arranged in the cell 230 of the photovoltaic module 200 is shown, and the three to-be-tested diodes 210 (to-be-tested diode 210#1, to-be-tested diode 210#2, to-be-tested diode 210#3) are connected in series in the photovoltaic module 200. Normally, the reverse currents I1, I2 and I3 flow through the three to-be-tested diodes 210 (to-be-tested diode 210#1, to-be-tested diode 210#2, to-be-tested diode 210#3) respectively, and if all the three to-be-tested diodes 210 (to-be-tested diode 210#1, to-be-tested diode 210#2, to-be-tested diode 210#3) do not break down, then I1, I2 and I3 are only about tens of microamperes at this time, and if a to-be-tested diode 210 (such as to-be-tested diode 210#1) breaks down slightly, then I1 will rise to about tens of milliamperes to tens of amperes at this time, and the magnetic field near the to-be-tested diode 210#1 will be much larger than that of a normal diode, so whether the to-be-tested diode 210#1 breaks down slightly can be judged by detecting the magnetic induction intensity.

[0080] The technical features of the above embodiments can be combined in any manner. To make the description concise, all possible combinations of the technical features in the above embodiments are not described, but as long as the combinations of the technical features do not exist contradictory, they shall be considered as the scope of the present application.

[0081] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it shall not be understood as the limitation of the application scope. It should be noted that for those skilled in the art, some modifications and improvements can be made without departing from the concept of the present application, and these shall be within the protection scope of the present application. Therefore, the protection scope of the present application patent shall be subject to the appended claims.

Claims

1. A diode detection device, characterized in that: The method comprises the following steps: A magnetic field detection module is used to detect the magnetic field information around the diode under test in the current-carrying state; An analysis module is connected with the magnetic field detection module and is used to determine the breakdown result of the diode under test according to the magnetic field information; the breakdown result includes slight breakdown; A heating module is used to heat the diode under test to increase the leakage current of the diode under test with slight breakdown; The magnetic field detection module is arranged in a direction perpendicular to the current flow direction of the diode under test and is located at a preset distance from the diode under test; the magnetic field detection module is used to detect the magnetic induction intensity at the location; The analysis module is used to determine the breakdown result of the diode under test according to the magnetic induction intensity and the preset distance.

2. The diode detection apparatus of claim 1, wherein The diode under test is a diode in a photovoltaic module and is in the current-carrying state when the photovoltaic module performs photoelectric conversion; The diode detection device further comprises: An illuminating module is used to provide light with a preset illuminance to the photovoltaic module connected with the diode under test.

3. The diode detection apparatus of claim 1, wherein The breakdown result includes slight breakdown; the analysis module is used to determine the breakdown result of the diode under test as the slight breakdown when the magnetic field information meets a first preset condition.

4. The diode detection apparatus of claim 3, wherein The magnetic field information includes magnetic induction intensity; the first preset condition includes that the magnetic induction intensity is less than a first preset magnetic induction intensity and greater than or equal to a second preset magnetic induction intensity.

5. The diode detection apparatus of claim 1, wherein The breakdown result includes complete breakdown; the analysis module is used to determine the breakdown result of the diode under test as the complete breakdown when the magnetic field information meets a second preset condition.

6. The diode detection apparatus of claim 5, wherein The magnetic field information includes magnetic induction intensity; the second preset condition includes that the magnetic induction intensity is greater than or equal to a first preset magnetic induction intensity.

7. The diode detection apparatus of claim 1, wherein The magnetic field detection module includes a Hall element.

8. A method of diode detection, the method comprising: The method comprises the following steps: Heating the diode under test to increase the leakage current of the diode under test with slight breakdown; Detecting the magnetic field information around the diode under test in the current-carrying state; the magnetic field information includes magnetic induction intensity; Determining the breakdown result of the diode under test according to the magnetic field information; The breakdown result includes slight breakdown; Determining the breakdown result of the diode under test according to the magnetic field information includes determining the breakdown result of the diode under test according to the magnetic induction intensity and a preset distance; The preset distance is the distance between the magnetic field detection module arranged in a direction perpendicular to the current flow direction of the diode under test and the diode under test.

9. The diode detection method of claim 8, wherein, The diode under test is a diode in a photovoltaic module and is in the current-carrying state when the photovoltaic module performs photoelectric conversion; before detecting the magnetic field information around the diode under test in the current-carrying state, the method further comprises the following step: Providing light with a preset illuminance to the photovoltaic module connected with the diode under test.

10. The diode detection method of claim 8, wherein, The breakdown result includes slight breakdown; determining the breakdown result of the diode under test according to the magnetic field information includes: Determining the breakdown result of the diode under test as the slight breakdown when the magnetic field information meets a first preset condition.

11. The diode detection method of claim 8, wherein, The breakdown result includes complete breakdown; and the determining the breakdown result of the to-be-tested diode according to the magnetic field information includes: When the magnetic field information satisfies a second preset condition, determining that the breakdown result of the to-be-tested diode is the complete breakdown.

12. A method for producing a photovoltaic module, characterized in that: The method comprises: performing EL testing on a photovoltaic module to be shipped; detecting the diode in the photovoltaic module to be shipped by using the diode detection device according to any one of claims 1 to 7 or by using the diode detection method according to any one of claims 8 to 11.

13. A diode detection system characterized by, The method comprises: a plurality of to-be-tested diodes; a plurality of diode detection devices for respectively detecting the plurality of to-be-tested diodes; at least part of the diode detection devices are the devices according to any one of claims 1 to 7.

14. The diode detection system according to claim 13, characterized in that: At least part of the to-be-tested diodes are arranged in a photovoltaic module.

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