Image sensing panel, flat panel detection device, and method for manufacturing image sensing panel

Abstract

Embodiments of the present application disclose an image sensing panel, a flat panel detection device, and a method for manufacturing an image sensing panel, including a driving circuit and a plurality of array-arranged photosensitive units, the photosensitive units being used to convert received light into electrical signals, the image sensing panel also including a substrate, a signal line, and an electrode layer, the photosensitive units being arranged on the surface of the substrate, the electrode layer covering the photosensitive units and being electrically connected to the photosensitive units, the driving circuit being electrically connected to the electrode layer via the signal line, the driving circuit being used to provide a driving voltage signal to the photosensitive units via the signal line and the electrode layer, so as to cooperate with the photosensitive units in converting the received light into electrical signals, wherein the signal line and the electrode layer are made of the same transparent conductive material to increase the area of ​​the photosensitive units receiving light, thereby improving the accuracy of light detection by the photosensitive units.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an image sensing panel, a flat panel detection device, and a method for manufacturing the image sensing panel. Background Art

[0002] X-ray photography utilizes the short wavelength and easy penetration properties of X-rays, as well as the different absorption characteristics of X-rays by different tissues, to form images by detecting the intensity of X-rays passing through objects. The flat panel detector (FPD) is responsible for converting X-rays into electrical signals and recording the images. The electrical signals can be stored for subsequent reading or connected to a monitor for real-time display. The flat panel detector is equipped with multiple photosensitive units, which are used to convert the received light into electrical signals. Currently, due to the setting of the signal line, the area of ​​the photosensitive unit that receives light becomes smaller, thereby affecting the accuracy of the photosensitive unit in detecting light.

[0003] Therefore, how to increase the light receiving area of ​​the photosensitive unit to improve the accuracy of the light detection signal is an urgent problem to be solved. Summary of the Invention

[0004] In view of the above-mentioned deficiencies in the prior art, the present application provides an image sensing panel, a flat panel detection device, and a method for manufacturing the image sensing panel, which can effectively increase the light receiving area of ​​the photosensitive unit.

[0005] The present application provides an image sensing panel, comprising a driving circuit and a plurality of photosensitive units arranged in an array, wherein the photosensitive units are configured to convert received light into electrical signals. The image sensing panel further comprises a substrate, signal lines, and an electrode layer, wherein the photosensitive units are disposed on a surface of the substrate, the electrode layer covers the photosensitive units and is electrically connected to the photosensitive units, the driving circuit is electrically connected to the electrode layer via the signal lines, and the driving circuit is configured to provide a driving voltage signal to the photosensitive units via the signal lines and the electrode layer, thereby cooperating with the photosensitive units to convert received light into the electrical signals, wherein the signal lines and the electrode layer are made of the same transparent conductive material.

[0006] Optionally, the image sensing panel also includes a scanning control circuit, a reading circuit, multiple scanning lines and multiple data lines, the scanning control circuit is electrically connected to the photosensitive unit via the scanning line, and the reading circuit is electrically connected to the photosensitive unit via the data line; the scanning control circuit is used to output a scanning signal to the photosensitive unit to control the reading circuit to obtain the electrical signal from the photosensitive unit through the data line.

[0007] Optionally, the photosensitive unit includes a photoelectric conversion element and a switching element, the photoelectric conversion element is used to convert the received light into the electrical signal, the switching element is electrically connected to the photoelectric conversion element, the scanning line and the data line, and the switching element is used to be turned on under the control of the scanning signal to control the reading circuit to receive the electrical signal from the photoelectric conversion element.

[0008] Optionally, the switching element includes a gate, a source, a drain and a channel layer, the source and the drain are stacked on the base substrate, the channel layer is stacked on the side of the source and the drain away from the base substrate, the gate is stacked on the side of the channel layer away from the base substrate, the gate is electrically connected to the scan line, the source is electrically connected to the photoelectric conversion element, and the drain is electrically connected to the data line.

[0009] Optionally, the image sensing panel further comprises a pad, wherein the pad is stacked on a side of the data line away from the base substrate, and the signal line is stacked on a side of the pad away from the data line, and the pad is used to increase the vertical distance between the data line and the signal line, and the pad and the gate of the switching element are made of the same metal material.

[0010] Optionally, the signal line is arranged in an "E" or "T" shape and covers a side of the pad away from the data line, so as to reduce the overlapping area between the signal line and the data line.

[0011] The present application also provides a flat-panel detection device, comprising a light-conducting layer, a scintillator layer and the aforementioned image sensing panel, wherein the light-conducting layer, the scintillator layer and the image sensing panel are stacked in sequence, the light-conducting layer is used to receive a first ray and transmit the first ray to the scintillator layer, the scintillator layer is used to convert the first ray into visible light and transmit the visible light to the image sensing panel, and the image sensing panel converts the received visible light into an electrical signal for storage.

[0012] The present application also provides a method for manufacturing the aforementioned image sensing panel, comprising: providing a base substrate, forming a plurality of array-arranged photosensitive units on the base substrate; forming an electrode layer and a signal line on a side of the photosensitive unit away from the base substrate, wherein the electrode layer and the signal line are made of the same transparent conductive material.

[0013] Optionally, the formation of multiple array-arranged photosensitive units on the base substrate includes: forming a first metal layer on the base substrate, and etching the first metal layer to form a source and a drain of the switching element, forming a channel layer of the switching element on the side of the first metal layer away from the base substrate, forming a second metal layer on the side of the channel layer away from the first metal layer, and etching the second metal layer to form a gate and a pad of the switching element.

[0014] Optionally, a photoelectric conversion element is formed adjacent to the switch element, the photoelectric conversion element is located on a side of the first metal layer away from the base substrate, and the photoelectric conversion element is electrically connected to the source of the switch element through the first metal layer.

[0015] Optionally, the forming of the electrode layer and the signal line on the side of the photosensitive unit away from the base substrate includes: forming a transparent conductive layer on the side of the photoelectric conversion element away from the base substrate, and etching the transparent conductive layer to form the electrode layer and the signal line, the electrode layer covers the photoelectric conversion element, and the signal line covers the pad. Compared with the existing technical problems, the embodiment of the present application can effectively avoid the signal line from blocking the photoelectric conversion element by making the transparent conductive layer into the electrode layer and the signal line, so as to increase the light receiving area of ​​the photoelectric conversion element, thereby improving the detection accuracy of the photoelectric conversion element. Compared with the existing method of making an insulating layer and making a via on the insulating layer to connect the signal line to the electrode layer, this embodiment can effectively reduce the voltage fluctuation of the electrode layer, and since no via is set, the resistance value at the via position can be close to the resistance value at other positions of the electrode layer, which can further improve the accuracy of the signal. By making the second metal layer into a gate, the gate shields the channel layer, effectively preventing light from irradiating the switching element and causing leakage. The second metal layer can also be used to form a spacer to prevent voltage crosstalk between the data line and the electrode layer, as well as shielding the capacitance between the signal line and the electrode layer. Furthermore, since the first electrode of the photoelectric conversion element is directly connected to the first metal layer, the metal layer can be eliminated. Furthermore, by covering the gate with the channel layer, the metal layer can be further eliminated compared to existing manufacturing methods, thereby saving material. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1A schematic side view of the structure of a flat-panel detection device provided in an embodiment of the present application;

[0018] Figure 2 for Figure 1 A schematic diagram of the planar layout of the image sensing panel;

[0019] Figure 3 for Figure 1 A schematic diagram of the cross-sectional structure of the image sensing panel;

[0020] Figure 4 A schematic diagram of a planar layout of an image sensing panel provided in a second embodiment of the present application;

[0021] Figure 5 for Figure 4 Schematic diagram of the planar structure of the middle photosensitive unit;

[0022] Figure 6 for Figure 5 Schematic diagram of the cross-sectional structure of the middle photosensitive unit;

[0023] Figure 7 A schematic diagram of a planar structure of a photosensitive unit provided in the third embodiment of the present application;

[0024] Figure 8 A schematic diagram of a planar structure of a photosensitive unit provided in the fourth embodiment of the present application;

[0025] Figure 9 A flow chart of a method for manufacturing an image sensing panel according to a fifth embodiment of the present application;

[0026] Figure 10 Schematic diagram of the manufacturing process of the image sensor panel.

[0027] Explanation of the accompanying drawings: image sensing panel-100, light transmission layer-10, scintillator layer-20, image sensing panel-30, photosensitive unit-31, scanning control circuit-32, reading circuit-33, driving circuit-36, data line-DL, scanning line-GL, signal line-BL, electrode layer-34, pad-35, photoelectric conversion element-311, switching element-312, gate-g, source-s, drain-d, channel layer-a, substrate-Sub, insulating layer-PV, flat layer-PF, first metal layer-M1, second metal layer-M2. DETAILED DESCRIPTION

[0028] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present application.

[0029] The following descriptions of the embodiments are made with reference to the attached diagrams to illustrate specific embodiments that the present application can be used to implement. The serial numbers assigned to the components herein, such as "," second," etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in the present application include direct and indirect connections (couplings) unless otherwise specified. The directional terms mentioned in the present application, such as "upper," "lower," "front," "back," "left," "right," "inside," "outside," "side," etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0030] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances. It should be noted that the terms "first", "second", etc. in the description, claims, and drawings of this application are used to distinguish different objects, rather than to describe a specific order.

[0031] In addition, the terms "include", "may include", "include", or "may include" used in this application indicate the existence of the corresponding functions, operations, elements, etc. disclosed, and do not limit one or more other functions, operations, elements, etc. In addition, the terms "include" or "include" indicate the existence of the corresponding features, numbers, steps, operations, elements, components, or combinations thereof disclosed in the specification, and do not exclude the existence or addition of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, and are intended to cover non-exclusive inclusions. In addition, when describing the embodiments of the present application, "may" is used to indicate "one or more embodiments of the present application". And, the term "exemplary" is intended to refer to an example or illustration.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0033] See also Figure 1 , Figure 1 A schematic side view of the structure of a flat-panel detection device provided in an embodiment of the present application.

[0034] like Figure 1 As shown, the flat panel detection device 100 includes a light-conducting layer 10, a scintillator layer 20 and an image sensing panel 30 stacked in sequence, wherein the light-conducting layer 10 is used to receive a first ray and transmit the first ray to the scintillator layer 20, the scintillator layer 20 is used to convert the first ray into visible light, and transmit the visible light to the image sensing panel 30, and the image sensing panel 30 is used to convert the received visible light into an electrical signal for storage.

[0035] In this embodiment, the first ray can be an X-ray or a γ-ray, that is, the flat panel detection device can act as an X-ray detector or a γ-ray detector. Of course, it can also be a detector for other rays, and this application does not limit this.

[0036] In an exemplary embodiment, the flat-panel detection device may also include a control module, a signal processing module and a communication module. The flat-panel detection device is used to cooperate with an X-ray emitting device (not shown). The X-ray emitting device is used to emit X-rays that penetrate objects. The flat-panel detection device is used to receive X-rays that pass through objects and convert the X-rays into visible light. The optical sensor panel (image sensing panel 30) is used to convert visible light into electrical signals, and under the processing of the control module, the signal processing module and the communication module, the electrical signals are amplified and converted into digital signals and transmitted to a computer for image processing to form an X-ray digital image.

[0037] Please also refer to Figure 2 and Figure 3 , Figure 2 for Figure 1 Schematic diagram of the planar layout of the image sensing panel, Figure 3 for Figure 1 Schematic diagram of the cross-sectional structure of the image sensing panel.

[0038] like Figure 2 and Figure 3As shown, the image sensing panel 30 includes a plurality of scan lines GL and a plurality of data lines DL disposed on a substrate Sub. The scan lines GL and the data lines DL intersect to form a plurality of photosensitive cells 31, which are arranged in an array. The photosensitive cells 31 are configured to receive visible light from the scintillator layer 20 and convert the intensity of the visible light into electrical signals. The image sensing panel 30 also includes a scan control circuit 32 and a readout circuit 33. The scan control circuit 32 is configured to output scan signals to the photosensitive cells 31 via the scan lines GL, enabling the readout circuit 33 to read the electrical signals stored in the photosensitive cells 31 from the data lines DL, thereby reading image information and displaying the image.

[0039] The photosensitive unit 31 includes a photoelectric conversion element 311 and a switching element 312. The photoelectric conversion element 311 is used to convert received visible light into an electrical signal for storage. The switching element 312 includes a gate g, a source s, a drain d, and a channel layer a. The gate g of the switching element 312 is connected to the scan line GL of the image sensing panel 30, the drain d of the switching element 312 is connected to the data line DL of the image sensing panel 30, and the source s of the switching element 312 is connected to the photoelectric conversion element 311. The positions of the source s and drain d are interchangeable.

[0040] When the switch element 312 is turned on under the control of the scan signal, the reading circuit 33 reads the electrical signal from the photoelectric conversion element 311 via the data line DL. The photoelectric signal is collected by controlling the signal timing on the scan line GL and the data line DL, that is, the photocurrent signal generated by the photoelectric conversion element 311 is collected by controlling the switching state of the switch element 312. More specifically, when the image sensing panel 30 is in operation, each photosensitive unit 31 receives a light signal and converts it into an electrical signal, which is stored in the storage capacitor or the capacitor of the photoelectric conversion element 311 itself. The photoelectric conversion element 311 receives the visible light converted by the scintillator layer 20 and generates photogenerated carriers, which are converted into electrical signals proportional to the intensity of the visible light. The scanning control circuit 32 is connected to the photosensitive unit array, controls the gate of each row of the switch element 312, and controls the conduction and disconnection between the source and drain of the switch element 312 through voltage. Therefore, each photosensitive unit 31 can be turned on row by row. The readout circuit 33 is connected to the photosensitive cell array. When the switch elements 312 in the same row are turned on, the readout circuit 33 reads the charge in the photosensitive cells 31 in that row, thereby reading the image information. Generally, the size of the photosensitive cells determines the resolution of the image. Therefore, the smaller the area of ​​the photosensitive cells, the higher the image resolution. The photoelectric conversion element 311 can be a photodiode, and the switch element 312 can be a thin film transistor (TFT).

[0041] The image sensor panel 30 further includes a signal line BL and a drive circuit 36. The signal line BL is disposed on a side of the photoelectric conversion element 311 away from the substrate Sub and is connected to the photoelectric conversion element 311. The drive circuit 36 ​​is configured to provide a drive voltage signal to the photoelectric conversion element 311 via the signal line BL. The drive voltage signal may be a bias voltage signal that cooperates with the photoelectric conversion element 311 to convert received light into an electrical signal.

[0042] The electrode layer 34 is provided on the side of the photoelectric conversion element 311 close to the signal line BL to increase the contact area between the signal line BL and the photoelectric conversion element 311 .

[0043] Among them, the signal line BL is usually made of a non-transparent metal layer, which results in a smaller effective area for the photoelectric conversion element 311 to receive light, thereby affecting the conversion of the photoelectric signal and resulting in a poor final display effect. Based on this, the second embodiment of the present application provides an image sensing panel that can effectively solve the problem of the small effective area for the photoelectric conversion element 311 to receive light.

[0044] Please also refer to Figures 4 to 6 , Figure 4 This is a schematic diagram of a planar layout of an image sensing panel provided in the second embodiment of the present application. Figure 5 for Figure 4 Schematic diagram of the planar structure of the photosensitive unit. Figure 6 for Figure 5 Schematic diagram of the cross-sectional structure of the photosensitive unit.

[0045] like Figure 4 As shown, the image sensing panel 30 includes a plurality of scan lines GL and a plurality of data lines DL disposed on a substrate Sub. The scan lines GL and the data lines DL intersect to form a plurality of photosensitive cells 31, which are arranged in an array. The photosensitive cells 31 are configured to receive visible light from the scintillator layer 20 and convert the intensity of the visible light into electrical signals for storage. The image sensing panel 30 also includes a scan control circuit 32 and a readout circuit 33. The scan control circuit 32 is configured to output scan signals to the photosensitive cells 31 via the scan lines GL, enabling the readout circuit 33 to read the electrical signals stored in the photosensitive cells 31 from the data lines DL, thereby reading image information and displaying the image on a predetermined display panel.

[0046] The image sensing panel 30 also includes a signal line BL and a driving circuit 36. The driving circuit 36 ​​is electrically connected to the signal line BL and is electrically connected to the photosensitive unit 31 through the signal line BL. The driving circuit 36 ​​is used to provide a driving voltage signal to the photosensitive unit 31. The photosensitive unit 31 converts the received light into an electrical signal for storage based on the driving voltage signal. The driving voltage signal can be a bias voltage, which is used to cooperate with the photosensitive unit 31 to perform photoelectric conversion on the received light.

[0047] like Figure 5 and Figure 6 As shown, the image sensing panel 30 also includes an electrode layer 34, and the driving circuit 36 ​​is electrically connected to the electrode layer 34 through the signal line BL. The electrode layer 34 covers the photosensitive unit 31 and is electrically connected to the photosensitive unit 31. The signal line BL is used to provide a driving voltage signal to the photosensitive unit 31 through the electrode layer 34 to cooperate with the photosensitive unit 31 to receive light and convert it into an electrical signal, wherein the signal line BL and the electrode layer 34 are made of the same transparent conductive material.

[0048] The photosensitive unit 31 includes a photoelectric conversion element 311 and a switching element 312. The photoelectric conversion element 311 is used to convert the received visible light into an electrical signal for storage. The switching element 312 is electrically connected to the data line DL, the scan line GL and the photoelectric conversion element 311. The switching element 312 is used to be turned on under the control of the scan signal so that the photoelectric conversion element 311 transmits the stored electrical signal to the reading circuit 33 through the data line.

[0049] The image sensing panel 30 also includes a pad 35, which is sandwiched between the signal line BL and the data line DL. That is, the pad 35 is stacked on the side of the signal line BL (source s) away from the substrate Sub. The pad 35 and the gate g are made of the same metal layer. The pad 35 is used to increase the vertical distance between the data line DL and the signal line BL to shield the capacitive crosstalk between the data line DL and the signal line BL.

[0050] In this embodiment, the signal line BL is a long strip that completely covers the pad 35. The projections of the signal line BL and the data line DL on the substrate Sub overlap. Specifically, the switching element 312 includes a source s, a drain d, a gate g, and a channel layer a. The source s and drain d are stacked on the substrate Sub and fabricated from a first metal layer. The channel layer a is stacked on the source substrate Sub side of the source a and drain d. The gate g is stacked on the side of the channel layer a away from the substrate Sub and fabricated from a second metal layer. The gate g of the switching element 312 is connected to the scan line GL of the image sensor panel 30, the drain d of the switching element 312 is connected to the data line DL of the image sensor panel 30, and the source s of the switching element 312 is connected to the photoelectric conversion element 311. The positions of the source s and drain d are interchangeable. The pad 35 is fabricated from the second metal layer, i.e., the same metal layer as the gate g.

[0051] The electrode layer 34 is stacked on the side of the photoelectric conversion element 311 away from the substrate Sub. The signal line BL and the electrode layer 34 are made of the same transparent conductive layer. The signal line BL is used to provide a driving voltage signal to the photoelectric conversion element 311 through the electrode layer 34 .

[0052] For example, the signal line BL and the electrode layer 34 may be made of a conductive material having a transmittance of 50% or more, such as a transparent conductive material, including but not limited to IZO (Indium Zinc Oxide), ITO (Indium Tin Oxide), AZO (Al Zinc Oxide), IFO (Indium FOxide), etc., which is not limited in this embodiment.

[0053] By making the signal line BL and the electrode layer 34 from the same transparent conductive layer, the light transmitted to the photoelectric conversion element 311 can penetrate the signal line BL and be transmitted to the photoelectric conversion element 311, thereby avoiding the problem of the photoelectric conversion element 311 receiving light receiving area being reduced due to the obstruction of the signal line BL, thereby improving the accuracy of detection. In addition, by making the second metal layer into the gate g of the switching element 312, the gate g can cover the channel layer a of the switching element 312. Since the gate g is a non-transparent conductive layer, the gate g can effectively block the rays around the channel layer a, thereby preventing the channel layer a from being affected by the rays and causing leakage current.

[0054] See also Figure 7 , Figure 7 A schematic diagram of the planar structure of a photosensitive unit provided in the third embodiment of the present application.

[0055] like Figure 7As shown, the signal line BL is in an "E" shape and covers the side of the pad 35 away from the substrate Sub, that is, the signal line BL partially covers the pad 35 and the data line DL to reduce the capacitive crosstalk between the signal line BL and the data line DL.

[0056] See also Figure 8 , Figure 8 This is a schematic diagram of a planar structure of a photosensitive unit provided in the fourth embodiment of the present application. Figure 8 As shown, the signal line BL is in a "three" shape and covers the side of the pad 35 away from the substrate Sub, that is, the signal line BL partially covers the pad 35 and the data line DL to reduce the capacitive crosstalk between the signal line BL and the data line DL.

[0057] See also Figure 9 , Figure 9 This is a flow chart of a method for manufacturing an image sensor panel provided in the fifth embodiment of the present application.

[0058] like Figure 9 As shown, the specific steps include:

[0059] S101, providing a base substrate, and forming a plurality of photosensitive units arranged in an array on the base substrate.

[0060] S102, forming an electrode layer and a signal line on a side of the photosensitive unit away from the base substrate, wherein the electrode layer and the signal line are made of the same transparent conductive layer.

[0061] Please refer to the following for details: Figure 10 , Figure 10 Schematic diagram of the manufacturing process of the image sensor panel.

[0062] like Figure 10 As shown, a base substrate Sub is provided, a first metal layer M1 is formed on the base substrate Sub, and the first metal layer M1 is etched to form the source s and drain d of the switching element 312. A channel layer a is formed on the side of the first metal layer M1 away from the base substrate Sub. The channel layer a is partially embedded between the source s and the drain d. The channel layer a includes a contact layer, a semiconductor layer, and an insulating layer stacked in sequence.

[0063] A second metal layer M2 is formed on the side of the channel layer a away from the first metal layer M1. The second metal layer M2 is etched to form the gate g of the switching element 312 and the spacer 35. The gate g and the spacer 35 are horizontally spaced a predetermined distance apart. The gate g of the switching element 312 covers the source s, drain d, and the channel layer a. An insulating layer PV is formed on the side of the second metal layer M2 away from the substrate Sub.

[0064] The photoelectric conversion element 311 is formed near the switch element 312 and is stacked on the first metal layer M1 away from the substrate Sub. That is, the first electrode of the photoelectric conversion element 311 is electrically connected to the source s of the switch element 312 through the first metal layer M1.

[0065] A transparent conductive layer is formed on the side of the photoelectric conversion element 311 away from the substrate Sub, and the transparent conductive layer is etched to form an electrode layer 34 and a signal line BL. The electrode layer 34 covers the photoelectric conversion element 311, and the signal line BL covers the pad 35. The signal line BL is electrically connected to the second electrode of the photoelectric conversion element 311 through the electrode layer 34. The driving circuit 36 ​​is used to provide a voltage signal to the photoelectric conversion element 311 through the signal line BL.

[0066] That is, the pad 35 is sandwiched between the data line DL and the signal line BL to increase the vertical height between the data line DL and the signal line BL, which can effectively reduce the voltage crosstalk between the data line DL and the signal line BL and the electrode layer 34, and at the same time effectively shield the capacitance between the data line DL and the signal line B and the electrode layer 34.

[0067] A flat layer PF is formed on a side of the transparent conductive layer ITO away from the substrate Sub and a side of the insulating layer PV away from the substrate Sub.

[0068] By making the transparent conductive layer ITO into the electrode layer 34 and the signal line BL, the signal line BL can be effectively avoided from blocking the photoelectric conversion element 311, so as to increase the light receiving area of ​​the photoelectric conversion element 311, thereby improving the detection accuracy of the photoelectric conversion element 311. Compared with the existing method of making an insulating layer and making a via on the insulating layer to connect the signal line BL to the electrode layer 34, this embodiment can effectively reduce the voltage fluctuation of the electrode layer 34, and since no via is set, the resistance value at the via position can be close to the resistance value at other positions of the electrode layer 34, which can further improve the accuracy of the signal.

[0069] At the same time, by forming the second metal layer M2 into a gate g, the gate g can shield the channel layer a, effectively preventing light from irradiating the switching element 312 and causing leakage. The second metal layer M2 can also be used to form a pad 35 to prevent voltage crosstalk between the data line DL, the signal line BL, and the electrode layer 34, and to shield the capacitance between the data line DL, the signal line BL, and the electrode layer 34. Furthermore, since the first electrode of the photoelectric conversion element 311 is directly connected to the first metal layer M1, the metal layer can be eliminated. Furthermore, the gate g covers the channel layer a, which can further reduce the metal layer compared to existing manufacturing methods, thereby saving material.

[0070] It should be understood that the application of the present invention is not limited to the above examples. For those skilled in the art, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. An image sensing panel comprising a driving circuit and a plurality of photosensitive units arranged in an array, wherein the photosensitive units are configured to convert received light into electrical signals; It is characterized by: The image sensing panel further includes a base substrate, signal lines, and an electrode layer. The photosensitive units are disposed on a surface of the base substrate. The electrode layer covers the photosensitive units and is electrically connected to the photosensitive units. The driving circuit is electrically connected to the electrode layer via the signal lines. The driving circuit is configured to provide a driving voltage signal to the photosensitive units via the signal lines and the electrode layer, so as to cooperate with the photosensitive units in converting received light into the electrical signals. The signal lines and the electrode layer are made of the same transparent conductive material. The image sensing panel also includes a pad and a data line. The data line is connected to the photosensitive unit for transmitting an electrical signal. The pad is stacked on the side of the data line away from the base substrate. The signal line is stacked on the side of the pad away from the data line. The pad is used to increase the vertical distance between the data line and the signal line.

2. The image sensor panel according to claim 1, wherein: The image sensing panel further includes a scanning control circuit, a reading circuit, and a plurality of scanning lines, wherein the scanning control circuit is electrically connected to the photosensitive unit via the scanning lines, and the reading circuit is electrically connected to the photosensitive unit via the data lines; The scanning control circuit is used to output a scanning signal to the photosensitive unit to control the reading circuit to obtain the electrical signal from the photosensitive unit through the data line.

3. The image sensor panel according to claim 2, wherein: The photosensitive unit includes a photoelectric conversion element and a switching element. The photoelectric conversion element is used to convert the received light into the electrical signal. The switching element is electrically connected to the photoelectric conversion element, the scanning line and the data line. The switching element is used to be turned on under the control of the scanning signal to control the reading circuit to receive the electrical signal from the photoelectric conversion element.

4. The image sensor panel according to claim 3, wherein: The switching element includes a gate, a source, a drain and a channel layer, the source and the drain are stacked on the base substrate, the channel layer is stacked on the side of the source and the drain away from the base substrate, the gate is stacked on the side of the channel layer away from the base substrate, the gate is electrically connected to the scan line, the source is electrically connected to the photoelectric conversion element, and the drain is electrically connected to the data line.

5. The image sensor panel according to claim 4, wherein: The pad and the gate of the switching element are made of the same metal material.

6. The image sensor panel according to claim 5, wherein: The signal line is arranged in an "E" or "T" shape and covers the side of the pad away from the data line, so as to reduce the overlapping area between the signal line and the data line.

7. A flat panel detection device, characterized in that: The invention comprises a light-conducting layer, a scintillator layer and an image sensing panel according to any one of claims 1 to 6, wherein the light-conducting layer, the scintillator layer and the image sensing panel are stacked in sequence, the light-conducting layer is used to receive a first ray and transmit the first ray to the scintillator layer, the scintillator layer is used to convert the first ray into visible light and transmit the visible light to the image sensing panel, and the image sensing panel converts the received visible light into an electrical signal for storage.

8. A method for manufacturing an image sensor panel according to any one of claims 1 to 6, characterized in that: include: Providing a base substrate, and forming a plurality of photosensitive units arranged in an array on the base substrate; An electrode layer and a signal line are formed on a side of the photosensitive unit away from the base substrate, and the electrode layer and the signal line are made of the same transparent conductive material.

9. The method for manufacturing an image sensor panel according to claim 8, wherein: The method of forming a plurality of array-arranged photosensitive units on a base substrate includes: forming a first metal layer on the base substrate, etching the first metal layer to form a source and a drain of a switching element, forming a channel layer of the switching element on a side of the first metal layer away from the base substrate, forming a second metal layer on a side of the channel layer away from the first metal layer, and etching the second metal layer to form a gate and a pad of the switching element.

10. The method for manufacturing an image sensor panel according to claim 9, wherein: A photoelectric conversion element is formed adjacent to the switch element. The photoelectric conversion element is located on a side of the first metal layer away from the base substrate. The photoelectric conversion element is electrically connected to the source of the switch element through the first metal layer.

11. The method for manufacturing an image sensor panel according to claim 10, wherein: The method of forming the electrode layer and the signal line on the side of the photosensitive unit away from the base substrate includes: forming a transparent conductive layer on the side of the photoelectric conversion element away from the base substrate, and etching the transparent conductive layer to form the electrode layer and the signal line, the electrode layer covers the photoelectric conversion element, and the signal line covers the pad.

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