Wafer processing methods, systems, and apparatus

Abstract

The application provides a wafer processing method, system and device, and relates to the technical field of semiconductors.The wafer processing method comprises the following steps: determining the surface topography shape of a wafer to be processed according to the topography parameters of the wafer to be processed; determining the disc type shape of a double-side polishing disc according to the historical disc type parameters of the double-side polishing disc; and using the double-side polishing disc with the corresponding disc type shape to polish the wafer to be processed with different surface topography shapes.The wafer to be processed with a certain surface topography shape is polished by using the double-side polishing disc with a certain disc type shape, so that the quality of the wafer after double-side polishing can be improved, the stability of the data can be improved, and the processing cost of the product can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer processing method, system and equipment. Background Art

[0002] As more semiconductor companies begin deploying processes below 14nm, wafer fabrication plants must provide wafers with higher-quality flatness. Double-side polishing (DSP) is a crucial process in wafer fabrication, significantly determining wafer flatness. However, existing DSP processes lack profile analysis of incoming and post-process materials. This results in poor product quality and stability when wafers with varying profiles are processed using the same DSP equipment. Summary of the Invention

[0003] The embodiments of the present invention provide a wafer processing method, system and equipment to solve the problems in the prior art of poor product quality and poor product stability after using the same DSP equipment to process wafers of different morphologies.

[0004] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0005] An embodiment of the present invention provides a wafer processing method, comprising:

[0006] Determining the surface topography of the wafer to be processed according to the topography parameters of the wafer to be processed;

[0007] determining a disc shape of the double-sided polishing disc according to historical processing disc shape parameters of the double-sided polishing disc;

[0008] For the wafers to be processed with different surface topography, double-sided polishing is performed using a double-sided polishing processing disc with a corresponding disc shape.

[0009] In some embodiments, for the wafers to be processed with different surface topography shapes, double-sided polishing is performed using a double-sided polishing processing disk with a corresponding disk shape, including at least one of the following:

[0010] When the surface topography of the wafer to be processed is convex, double-sided polishing is performed using a group of polishing discs with concave disc shapes among the double-sided polishing processing discs;

[0011] When the surface topography of the wafer to be processed is concave, double-sided polishing is performed using a group of polishing discs with convex disc shapes among the double-sided polishing processing discs;

[0012] When the surface topography of the wafer to be processed is W-shaped, double-sided polishing is performed using a group of polishing discs with an M-shaped disc shape among the double-sided polishing processing discs;

[0013] When the surface topography of the wafer to be processed is M-shaped, double-sided polishing is performed using a group of W-shaped polishing discs among the double-sided polishing processing discs.

[0014] In some embodiments, the topography parameters include:

[0015] The thickness value of the center point of the surface of the wafer to be processed;

[0016] The average thickness value of the edge of the wafer to be processed;

[0017] The average thickness value of the first concentric circle on the wafer to be processed, wherein the radius of the first concentric circle is one third to two thirds of the radius of the wafer to be processed.

[0018] In some embodiments, determining the surface topography of the wafer to be processed based on the topography parameters of the wafer to be processed includes at least one of the following:

[0019] In the case where the thickness value of the center point of the surface of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, determining that the surface topography of the wafer to be processed is convex;

[0020] In the case where the thickness value of the center point of the surface of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface topography of the wafer to be processed is concave;

[0021] When the thickness value of the center point of the surface of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, determining that the surface topography of the wafer to be processed is M-shaped;

[0022] When the thickness value of the surface center point of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the surface center point of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface morphology shape of the wafer to be processed is W-shaped.

[0023] In some embodiments, the double-sided polishing processing disk includes two sets of polishing disks arranged opposite to each other, wherein one set of polishing disks is arranged above the wafer to be processed, and the other set of polishing disks is arranged below the wafer to be processed;

[0024] Each set of polishing discs includes at least two polishing discs;

[0025] The historical processing disc type parameters include at least one of the following:

[0026] a cross-sectional shape of each polishing disk in each group of polishing disks;

[0027] The orientation of each polishing disk in each group of polishing disks.

[0028] In some embodiments, determining the disk shape of the double-sided polishing disk based on historical disk shape parameters of the double-sided polishing disk includes at least one of the following:

[0029] When the cross-sectional shape of each polishing pad in a set of the double-sided polishing pads is a straight line and each of the polishing pads is directed from the edge of the wafer to be processed toward the center of the wafer to be processed, determining that the disk shape of the set of polishing pads is concave;

[0030] When the cross-sectional shape of each polishing pad in a set of double-sided polishing pads is a straight line and each of the polishing pads extends from the center of the wafer to be processed toward the edge of the wafer to be processed, determining that the disk shape of the set of polishing pads is convex;

[0031] When the cross-sectional shape of each polishing pad in a set of double-sided polishing pads is a curve convex toward the wafer to be processed, determining that the disk shape of the set of polishing pads is M-shaped;

[0032] When the cross-sectional shape of each polishing pad in a group of the double-sided polishing pads is a curve convex away from the wafer to be processed, the disk shape of the group of polishing pads is determined to be W-shaped.

[0033] In some embodiments, the method further comprises:

[0034] Obtaining flatness parameters of a wafer after double-sided polishing using a double-sided polishing disc of a corresponding disc shape; wherein the flatness parameters include at least one of the following: global flatness GBIR, local flatness SFQR, and edge flatness ESFQR;

[0035] When the flatness parameter does not meet the preset parameter requirement, the disc shape parameter of the double-sided polishing disc is adjusted.

[0036] In some embodiments, the method further comprises:

[0037] After performing double-sided polishing for a preset period of time using a double-sided polishing disc of a corresponding disc shape, obtaining real-time disc shape parameters of the double-sided polishing disc;

[0038] When the difference between the real-time disc type parameter and the historical processing disc type parameter is greater than a preset threshold, the disc type parameter of the double-sided polishing disc is adjusted to the historical processing disc type parameter.

[0039] An embodiment of the present invention further provides a wafer processing system, comprising:

[0040] Control equipment, transfer mechanism and double-sided polishing processing plate;

[0041] The transfer mechanism is connected to the control device;

[0042] The control device is configured to determine the surface topography of the wafer to be processed based on the topography parameters of the wafer to be processed, and to determine the disc shape of the double-sided polishing disc based on the historical processing disc shape parameters of the double-sided polishing disc;

[0043] The control device is further configured to determine a double-sided polishing processing disc with a corresponding disc shape for the wafers to be processed with different surface topography shapes, and to send a transfer signal to the transfer mechanism;

[0044] The transfer mechanism is used to transfer the wafers to be processed with different surface topography shapes to the double-sided polishing processing disc of the corresponding disc shape according to the transfer signal;

[0045] The double-sided polishing processing disc is used for performing double-sided polishing on the wafer to be processed.

[0046] An embodiment of the present invention also provides a wafer processing device, comprising: a transceiver, a memory, a processor, and a computer program stored in the memory and runnable on the processor; the processor is used to read the program in the memory to implement the steps in the wafer processing method described above.

[0047] An embodiment of the present invention further provides a wafer processing system, comprising:

[0048] Control device, transfer mechanism and double-sided polishing processing disc

[0049] The transfer mechanism is connected with the control device;

[0050] The control device is configured to determine a surface topography shape of the wafer to be processed according to a topography parameter of the wafer to be processed, and determine a disc type shape of the double-sided polishing processing disc according to a historical processing disc type parameter of the double-sided polishing processing disc.

[0051] The control device is further configured to determine a double-sided polishing processing disc of a corresponding disc type shape for the wafer to be processed with different surface topography shapes, and send a transfer signal to the transfer mechanism.

[0052] The transfer mechanism is configured to transfer the wafer to be processed with different surface topography shapes to the double-sided polishing processing disc of the corresponding disc type shape according to the transfer signal.

[0053] The double-sided polishing processing disc is configured to perform double-sided polishing on the wafer to be processed.

[0054] The embodiment of the present application also provides a wafer processing device, which comprises a transceiver, a memory, a processor and a computer program stored in the memory and executable on the processor; the processor is configured to read the program in the memory to realize the steps in the wafer processing method according to any one of the above.

[0055] The embodiment of the present application has the following beneficial effects:

[0056] The wafer processing method provided by the embodiment of the present application determines a surface topography shape of the wafer to be processed according to a topography parameter of the wafer to be processed, and determines a disc type shape of the double-sided polishing processing disc according to a first historical processing disc type parameter of the double-sided polishing processing disc, so as to realize classification of the wafer to be processed and the double-sided polishing processing disc; after the classification, the double-sided polishing processing disc of the corresponding disc type shape is used to perform double-sided polishing on the wafer to be processed with different surface topography shapes, that is, the double-sided polishing processing disc of one disc type shape is used to process the wafer to be processed with one type of surface topography shape, so that the quality of the wafer after double-sided polishing can be improved, the stability of data can be improved, and the processing cost of products can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0057] Figure 1 A flow chart of the wafer processing method provided by the embodiment of the present application is shown;

[0058] Figure 2 A schematic diagram of a convex surface topography shape provided by the embodiment of the present application is shown;

[0059] Figure 3A schematic diagram showing the concave surface morphology provided by an embodiment of the present invention;

[0060] Figure 4 A schematic diagram showing the surface morphology of an M-shaped structure provided by an embodiment of the present invention;

[0061] Figure 5 A schematic diagram showing the W-shaped surface morphology provided by an embodiment of the present invention;

[0062] Figure 6 A schematic diagram showing a concave disk shape provided by an embodiment of the present invention;

[0063] Figure 7 A schematic diagram showing a convex disc shape provided by an embodiment of the present invention;

[0064] Figure 8 A schematic diagram showing an M-shaped disc shape provided by an embodiment of the present invention;

[0065] Figure 9 A schematic diagram showing a W-shaped disc shape provided by an embodiment of the present invention;

[0066] Figure 10 The figure shows the overall flow chart of the wafer processing method provided by the embodiment of the present invention. DETAILED DESCRIPTION

[0067] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, they will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0068] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present invention.

[0069] To solve the problems in the prior art of large fluctuations in flatness parameters and poor product stability of products after processing wafers of different morphologies using the same DSP device, the embodiments of the present invention provide a wafer processing method, system and device.

[0070] like Figure 1 As shown, an embodiment of the present invention provides a wafer processing method, comprising:

[0071] Step 101: Determine the surface topography of the wafer to be processed according to the topography parameters of the wafer to be processed.

[0072] The wafer to be processed may also be referred to as a silicon wafer to be processed.

[0073] In this step, according to different topographic parameters of the wafer to be processed, the surface topography shape of the wafer to be processed is determined, and the surface topography classification of the wafer to be processed is realized.

[0074] Optionally, the topographic parameters include at least one of:

[0075] The thickness value of the surface center point of the wafer to be processed, wherein the surface of the wafer to be processed includes the upper surface of the wafer to be processed and the lower surface of the wafer to be processed, that is, the thickness value of the surface center point of the wafer to be processed includes the thickness value of the upper surface center point of the wafer to be processed and the thickness value of the upper surface center point of the wafer to be processed.

[0076] The average thickness value of the edge of the wafer to be processed, wherein the average thickness value of the edge of the wafer to be processed can be obtained by measuring the thickness values of a plurality of points on the edge of the wafer to be processed and then taking the average, and the edge of the wafer to be processed can be a position as close as possible to the outer periphery of the wafer to be processed or a position on the wafer to be processed with a distance from the outer periphery less than a certain preset distance, which is selected according to requirements and can be a small distance.

[0077] The average thickness value of the first concentric circle on the wafer to be processed, wherein the radius of the first concentric circle is one-third to two-thirds of the radius of the wafer to be processed, and the number of the first concentric circles can be one or more, that is, the average thickness values of at least one first concentric circle on the wafer to be processed are obtained, and the first concentric circle is located as close as possible to the middle of the wafer to be processed.

[0078] Step 102: According to the historical processing disc type parameters of the double-sided polishing processing disc, the disc type shape of the double-sided polishing processing disc is determined.

[0079] In this step, according to different historical processing disc type parameters of the double-sided polishing processing disc, the disc type shape of the double-sided polishing processing disc is determined, and the disc type shape classification of the double-sided polishing processing disc is realized. The historical processing disc type parameters can be understood as initial disc type parameters when the double-sided polishing processing disc has not started processing the wafer, or as disc type parameters (or preferred disc type parameters) maintained after the double-sided polishing processing disc processes the wafer for a period of time.

[0080] The double-sided polishing processing disc includes two sets of polishing discs arranged oppositely, wherein one set of polishing discs is arranged above the wafer to be processed, and the other set of polishing discs is arranged below the wafer to be processed, that is, the upper surface and the lower surface of the wafer to be processed are processed by the two sets of polishing discs respectively, and the wafer to be processed is double-sided polished.

[0081] The historical processing disc type parameters include at least one of the following:

[0082] The cross-sectional shape (also referred to as the initial cross-sectional shape) of each polishing disk in each group of polishing disks may include a straight shape, a curved shape, etc.;

[0083] The orientation of each polishing pad in each group of polishing pads (also called initial orientation) includes being concave inward from the periphery of the wafer to be processed, being concave from the center of the wafer to be processed toward the periphery, and having the polishing pad be horizontal.

[0084] It should be noted that the shapes of the polishing pads in the two groups of double-sided polishing pads are the same or different, but the shapes of the polishing pads in the same group are the same.

[0085] Step 103: For the wafers to be processed with different surface topography shapes, double-sided polishing is performed using a double-sided polishing processing disc with a corresponding disc shape.

[0086] In this step, for double-sided polishing discs of different disc shapes, the surface morphology that matches the double-sided polishing disc of the disc shape is determined, and the double-sided polishing disc of a certain disc shape is used to polish the wafer to be processed with the corresponding surface morphology, thereby improving the flatness of the wafer after double-sided polishing and improving stability.

[0087] In an optional embodiment, determining the surface topography of the wafer to be processed according to the topography parameters of the wafer to be processed includes at least one of the following:

[0088] In the case where the thickness value of the center point of the surface of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, it is determined that the surface morphology of the wafer to be processed is convex, that is, the thickness value of the surface of the wafer to be processed gradually decreases from the center point to the edge, or generally shows a trend of gradually decreasing, then the surface morphology of the wafer to be processed is convex, and the schematic diagram of the convex surface morphology is as shown below. Figure 2 As shown, Thickness represents the thickness value;

[0089] In the case where the thickness value of the surface center point of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the surface center point of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface morphology of the wafer to be processed is concave, that is, the thickness value of the surface of the wafer to be processed gradually increases from the center point to the edge, or generally shows a trend of gradually increasing, then the surface morphology of the wafer to be processed is concave, and the schematic diagram of the concave surface morphology is as shown below. Figure 3 As shown, Thickness represents the thickness value;

[0090] In the case where the thickness value of the surface center point of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the surface center point of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, it is determined that the surface morphology of the wafer to be processed is M-type, that is, the thickness value of the surface of the wafer to be processed gradually increases from the center point to the edge and then gradually decreases, or generally presents the above trend, then the surface morphology of the wafer to be processed is M-type, and the schematic diagram of the M-type surface morphology is as shown below. Figure 4 As shown, Thickness represents the thickness value;

[0091] In the case where the thickness value of the center point of the surface of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface morphology of the wafer to be processed is W-shaped, that is, the thickness value of the surface of the wafer to be processed gradually decreases from the center point to the edge and then gradually increases, or generally presents the above trend, then the surface morphology of the wafer to be processed is W-shaped, and the schematic diagram of the W-shaped surface morphology is as shown below. Figure 5 As shown, Thickness represents the thickness value.

[0092] Optionally, a DSP device can be designed in which the cross-sectional shape of the upper polishing plate (a group of polishing plates located above the wafer to be processed) can only be a straight line during the adjustment process, and only its horizontal angle (i.e., direction) can be adjusted, while the horizontal angle of the lower polishing plate (a group of polishing plates located below the wafer to be processed) cannot be adjusted, but its cross-sectional shape can be adjusted to a curve.

[0093] In some embodiments, determining the disk shape of the double-sided polishing disk based on historical disk shape parameters of the double-sided polishing disk includes at least one of the following:

[0094] In the case where the cross-sectional shape of each polishing disk in a group of double-sided polishing disks is a straight line and each of the polishing disks is from the edge of the wafer to be processed toward the center of the wafer to be processed, the disk shape of the group of polishing disks is determined to be concave, that is, each polishing disk in the group of polishing disks is a flat polishing disk and is concave from the edge of the wafer to be processed toward the center of the wafer to be processed, then the disk shape of the group of polishing disks is concave, and the schematic diagram of the concave disk shape is as shown in FIG. Figure 6 As shown, Figure 6 In the embodiment, the cross-sectional shape of another set of polishing discs in the double-sided polishing processing disc is a straight line and is horizontally oriented as an example;

[0095] In the case where the cross-sectional shape of each polishing disk in a group of double-sided polishing disks is a straight line and each of the polishing disks extends from the center of the wafer to be processed toward the edge of the wafer to be processed, the disk shape of the group of polishing disks is determined to be convex, that is, each polishing disk in the group of polishing disks is a flat polishing disk and is concave from the center of the wafer to be processed toward the edge of the wafer to be processed, then the disk shape of the group of polishing disks is convex, and the schematic diagram of the convex disk shape is as shown below. Figure 7 As shown, Figure 7 In the embodiment, the cross-sectional shape of another set of polishing discs in the double-sided polishing processing disc is a straight line and is horizontally oriented as an example;

[0096] In the case where the cross-sectional shape of each polishing pad in a group of double-sided polishing pads is a curve convex toward the wafer to be processed, the disk shape of the group of polishing pads is determined to be M-shaped, that is, each polishing pad in the group of polishing pads (i.e., the lower polishing pad) is a curved disk shape, convex toward the wafer to be processed, and horizontally oriented, then the disk shape of the group of polishing pads is M-shaped. The schematic diagram of the M-shaped disk shape is as shown in FIG. Figure 8 As shown, Figure 8 In the embodiment, the cross-sectional shape of another set of polishing discs in the double-sided polishing processing disc is a straight line and is horizontally oriented as an example;

[0097] In the case where the cross-sectional shape of each polishing pad in a group of the double-sided polishing pads is a curve convex away from the wafer to be processed, the disk shape of the group of polishing pads is determined to be W-shaped, that is, each polishing pad in the group of polishing pads (i.e., the lower polishing pad) is a curved disk shape, convex away from the wafer to be processed, and horizontally oriented, then the disk shape of the group of polishing pads is W-shaped. The schematic diagram of the W-shaped disk shape is as shown in FIG. Figure 9 As shown, Figure 9 In the embodiment, the cross-sectional shape of another set of polishing discs in the double-sided polishing processing disc is a straight line and is horizontally oriented as an example.

[0098] It should be noted that the two sets of polishing discs in the double-sided polishing processing disc may have the same disc shape, for example, both are horizontal straight lines, but this possibility is generally small. In most cases, the disc shapes of the two sets of polishing discs are different, and the cross-section of the disc shape of each polishing disc in the set of polishing discs located above the wafer to be processed can only be a straight line, and its angle (i.e., orientation) can only be changed horizontally during the adjustment process. The cross-section of the disc shape of each polishing disc in the set of polishing discs located below the wafer to be processed can be changed into a curve during the adjustment process, but the curve can only be changed in the horizontal direction, and its horizontal angle (i.e., orientation) cannot be adjusted. Therefore, the present invention lists the morphology type combinations of wafers suitable for the other disc shape corresponding to the lower disc surface being a horizontal straight line and the upper disc surface being a horizontal straight line.

[0099] In some optional embodiments, for the wafers to be processed with different surface topography shapes, double-sided polishing is performed using a double-sided polishing processing disk with a corresponding disk shape, including at least one of the following:

[0100] In the case where the surface topography of the wafer to be processed is convex, double-sided polishing is performed using a group of polishing discs with concave disc shapes in the double-sided polishing processing disc, that is, for the convex surface of the wafer to be processed, double-sided polishing is performed using a group of polishing discs with concave disc shapes in the double-sided polishing processing disc, so as to increase the removal amount of the middle part of the wafer to be processed;

[0101] In the case where the surface topography of the wafer to be processed is concave, double-sided polishing is performed using a group of polishing discs with convex disc shapes in the double-sided polishing processing disc, that is, for the concave surface of the wafer to be processed, double-sided polishing is performed using a group of polishing discs with convex disc shapes in the double-sided polishing processing disc, so as to increase the edge removal amount of the wafer to be processed;

[0102] In the case where the surface topography of the wafer to be processed is W-shaped, double-sided polishing is performed using a group of polishing discs with an M-shaped disc shape in the double-sided polishing processing disc, that is, for the W-shaped surface of the wafer to be processed, double-sided polishing is performed using a group of polishing discs with an M-shaped disc shape in the double-sided polishing processing disc, so as to increase the removal amount of the middle ring of the wafer to be processed;

[0103] When the surface morphology of the wafer to be processed is M-shaped, double-sided polishing is performed using a group of polishing discs with a W-shaped disc shape in the double-sided polishing processing disc. That is, for the M-shaped surface of the wafer to be processed, double-sided polishing is performed using a group of polishing discs with a W-shaped disc shape in the double-sided polishing processing disc to increase the removal amount of the wafer to be processed except for the middle ring.

[0104] In some embodiments, the method further comprises:

[0105] The flatness parameter of the wafer after double-side polishing by using the double-side polishing processing disc corresponding to the disc type shape is obtained, wherein the flatness parameter comprises at least one of the following: global backsurface-referenced ideal plane / range (GBIR), site frontsurface referenced least squares / range (SFQR), and edge site frontsurface referenced least squares / range (ESFQR).

[0106] That is, in the embodiment, after double-side polishing of the wafer to be processed by using the double-side polishing processing disc corresponding to the disc type shape, the flatness parameter of the processed wafer is obtained, and the flatness parameter is used for wafer topography monitoring.

[0107] In a case where the flatness parameter does not meet the preset parameter requirement, the disc type parameter of the double-side polishing processing disc is adjusted, wherein the preset parameter requirement comprises: preset GBIR, preset SFQR, and preset ESFQR.

[0108] That is, after processing of the wafer to be processed by using the double-side polishing processing disc, the processed wafer does not meet the requirement, and then the disc type parameter of the double-side polishing processing disc is adjusted for processing again, so that the processed product meets the requirement.

[0109] In some embodiments, the method further comprises:

[0110] After double-side polishing for a preset time length by using the double-side polishing processing disc corresponding to the disc type shape, the real-time disc type parameter of the double-side polishing processing disc is obtained, that is, after the double-side polishing processing disc works for a preset time length, whether the real-time disc type parameter meets the requirement is monitored.

[0111] In a case where a difference between the real-time disc type parameter and the historical processing disc type parameter is greater than a preset threshold, the disc type parameter of the double-side polishing processing disc is adjusted to the historical processing disc type parameter.

[0112] The difference between the real-time disc type parameter and the historical processing disc type parameter greater than the preset threshold comprises at least one of the following: a shape deviation between a real-time cross-sectional shape of each polishing disc in each group of polishing discs and an initial cross-sectional shape greater than a preset deviation, and an angle difference between a real-time orientation of each polishing disc in each group of polishing discs and an initial orientation greater than a preset angle deviation.

[0113] That is, when the difference between the real-time disc type parameters and the historical processing disc type parameters is greater than the preset threshold (that is, it does not meet the preset requirements), the disc type parameters of the double-sided polishing processing disc must be corrected so that the disc type parameters are adjusted to the historical processing disc type parameters.

[0114] The embodiment of the present invention classifies wafers to be processed and processes the classified wafers using polishing pads of corresponding disc shapes, thereby reducing the need to adjust the disc parameters of the polishing pad and increasing the flatness of the processed wafers.

[0115] The following combination Figure 10 , specifically describes the wafer processing method provided by the embodiment of the present invention:

[0116] Obtain the wafer to be processed, perform DSP incoming material classification according to the morphological parameters of the wafer to be processed, that is, determine the surface morphology of the wafer to be processed, match the historical data of the DSP device (i.e., the double-sided polishing disk) according to the historical processing disk type parameters of the double-sided polishing disk, determine the disk shape of the double-sided polishing disk, and the wafer to be processed with the surface morphology corresponding to the DSP device, process the wafer to be processed with the corresponding surface morphology by the DSP device, obtain the real-time disk type parameters of the DSP device after processing for a period of time, and when the difference between the real-time disk type parameters and the historical processing disk type parameters is greater than a preset threshold, correct the DSP parameters, that is, adjust the disk type parameters of the double-sided polishing disk to the historical processing disk type parameters.

[0117] An embodiment of the present invention further provides a wafer processing system, comprising:

[0118] Control equipment, transfer mechanism and double-sided polishing processing plate;

[0119] The transfer mechanism is connected to the control device;

[0120] The control device is configured to determine the surface topography of the wafer to be processed based on the topography parameters of the wafer to be processed, and to determine the disc shape of the double-sided polishing disc based on the historical processing disc shape parameters of the double-sided polishing disc;

[0121] The control device is further configured to determine a double-sided polishing processing disc with a corresponding disc shape for the wafers to be processed with different surface topography shapes, and to send a transfer signal to the transfer mechanism;

[0122] The transfer mechanism is used to transfer the wafers to be processed with different surface topography shapes to the double-sided polishing processing disc of the corresponding disc shape according to the transfer signal;

[0123] The double-sided polishing processing disc is used for performing double-sided polishing on the wafer to be processed.

[0124] In an embodiment of the present invention, after using the control device to determine the double-sided polishing processing disk with the disk shape corresponding to the wafer to be processed with different surface morphologies in the manner as described above, a transfer signal is sent to the transfer mechanism, and the transfer mechanism automatically transfers the wafer to be processed for processing according to the transfer signal.

[0125] In some embodiments, the topography parameters include:

[0126] The thickness value of the center point of the surface of the wafer to be processed;

[0127] The average thickness value of the edge of the wafer to be processed;

[0128] an average thickness value of a first concentric circle on the wafer to be processed, wherein the radius of the first concentric circle is one-third to two-thirds of the radius of the wafer to be processed;

[0129] The surface of the wafer to be processed includes an upper surface of the wafer to be processed and a lower surface of the wafer to be processed.

[0130] In some embodiments, the control device is specifically used for at least one of the following:

[0131] In the case where the thickness value of the center point of the surface of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, determining that the surface topography of the wafer to be processed is convex;

[0132] In the case where the thickness value of the center point of the surface of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface topography of the wafer to be processed is concave;

[0133] When the thickness value of the center point of the surface of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is greater than the average thickness value of the first concentric circles on the wafer to be processed, and the average thickness value of the first concentric circles on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface topography of the wafer to be processed is M-shaped;

[0134] When the thickness value of the surface center point of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the surface center point of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface morphology shape of the wafer to be processed is W-shaped.

[0135] In some embodiments, the double-sided polishing processing disk includes two sets of polishing disks arranged opposite to each other, wherein one set of polishing disks is arranged above the wafer to be processed, and the other set of polishing disks is arranged below the wafer to be processed;

[0136] Each set of polishing discs includes at least two polishing discs;

[0137] The historical processing disc type parameters include at least one of the following:

[0138] a cross-sectional shape of each polishing disk in each group of polishing disks;

[0139] The orientation of each polishing disk in each group of polishing disks.

[0140] In some embodiments, the control device is specifically used for at least one of the following:

[0141] When the cross-sectional shape of each polishing pad in a set of the double-sided polishing pads is a straight line and each of the polishing pads is directed from the edge of the wafer to be processed toward the center of the wafer to be processed, determining that the disk shape of the set of polishing pads is concave;

[0142] When the cross-sectional shape of each polishing pad in a set of double-sided polishing pads is a straight line and each of the polishing pads extends from the center of the wafer to be processed toward the edge of the wafer to be processed, determining that the disk shape of the set of polishing pads is convex;

[0143] When the cross-sectional shape of each polishing pad in a set of double-sided polishing pads is a curve convex toward the wafer to be processed, determining that the disk shape of the set of polishing pads is M-shaped;

[0144] When the cross-sectional shape of each polishing pad in a group of the double-sided polishing pads is a curve convex away from the wafer to be processed, the disk shape of the group of polishing pads is determined to be W-shaped.

[0145] In some embodiments, the control device is specifically used for at least one of the following:

[0146] In the case where the surface topography of the wafer to be processed is convex, determining to use a group of polishing discs with concave disc shapes among the double-sided polishing processing discs to perform double-sided polishing;

[0147] in the case that the surface topography shape of the wafer to be processed is concave, determining to use a group of polishing discs with convex disc type shape in the double-side polishing processing disc to perform double-side polishing;

[0148] in the case that the surface topography shape of the wafer to be processed is W type, determining to use a group of polishing discs with M type disc type shape in the double-side polishing processing disc to perform double-side polishing;

[0149] in the case that the surface topography shape of the wafer to be processed is M type, determining to use a group of polishing discs with W type disc type shape in the double-side polishing processing disc to perform double-side polishing.

[0150] the control device, in the case that the surface topography shape of the wafer to be processed is convex, determines to use a group of polishing discs with concave disc type shape in the double-side polishing processing disc to perform double-side polishing, and then sends a transfer signal to a transfer mechanism, which is used to transfer the wafer to be processed with convex surface topography shape to the group of polishing discs with concave disc type shape in the double-side polishing processing disc to perform double-side polishing according to the transfer signal;

[0151] the control device, in the case that the surface topography shape of the wafer to be processed is concave, determines to use a group of polishing discs with convex disc type shape in the double-side polishing processing disc to perform double-side polishing, and then sends a transfer signal to a transfer mechanism, which is used to transfer the wafer to be processed with concave surface topography shape to the group of polishing discs with convex disc type shape in the double-side polishing processing disc to perform double-side polishing according to the transfer signal;

[0152] the control device, in the case that the surface topography shape of the wafer to be processed is W type, determines to use a group of polishing discs with M type disc type shape in the double-side polishing processing disc to perform double-side polishing, and then sends a transfer signal to a transfer mechanism, which is used to transfer the wafer to be processed with W type surface topography shape to the group of polishing discs with M type disc type shape in the double-side polishing processing disc to perform double-side polishing according to the transfer signal;

[0153] the control device, in the case that the surface topography shape of the wafer to be processed is M type, determines to use a group of polishing discs with W type disc type shape in the double-side polishing processing disc to perform double-side polishing, and then sends a transfer signal to a transfer mechanism, which is used to transfer the wafer to be processed with M type surface topography shape to the group of polishing discs with W type disc type shape in the double-side polishing processing disc to perform double-side polishing according to the transfer signal.

[0154] In some embodiments, the control device is further used to:

[0155] Obtaining flatness parameters of a wafer after double-sided polishing using a double-sided polishing disc of a corresponding disc shape; wherein the flatness parameters include at least one of the following: global flatness GBIR, local flatness SFQR, and edge flatness ESFQR;

[0156] When the flatness parameter does not meet the preset parameter requirement, the disc shape parameter of the double-sided polishing disc is adjusted.

[0157] In some embodiments, the control device is further configured to:

[0158] After performing double-sided polishing for a preset period of time using a double-sided polishing disc of a corresponding disc shape, obtaining real-time disc shape parameters of the double-sided polishing disc;

[0159] When the difference between the real-time disc type parameter and the historical processing disc type parameter is greater than a preset threshold, the disc type parameter of the double-sided polishing disc is adjusted to the historical processing disc type parameter.

[0160] It should be noted that the control device provided in the embodiment of the present invention is capable of executing any of the wafer processing methods described above, so all embodiments of the above-mentioned wafer processing methods are applicable to the wafer processing system and can achieve the same or similar technical effects.

[0161] An embodiment of the present invention also provides a wafer processing device, comprising: a transceiver, a memory, a processor, and a computer program stored in the memory and runnable on the processor; the processor is used to read the program in the memory to implement the steps in the wafer processing method described above.

[0162] It should be noted that the controller provided in the embodiment of the present invention is capable of executing the steps of any of the above-mentioned wafer processing methods. All embodiments of the above-mentioned wafer processing methods are applicable to the wafer processing equipment and can achieve the same or similar technical effects.

[0163] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A wafer processing method, characterized in that: include: Determining the surface topography of the wafer to be processed according to the topography parameters of the wafer to be processed; determining a disc shape of the double-sided polishing disc according to historical processing disc parameters of the double-sided polishing disc; For the wafers to be processed with different surface topography, double-sided polishing is performed using a double-sided polishing processing disc with a corresponding disc shape; Wherein, for the wafers to be processed with different surface morphologies, double-sided polishing is performed using a double-sided polishing processing disc with a corresponding disc shape, including at least one of the following: When the surface topography of the wafer to be processed is convex, double-sided polishing is performed using a group of polishing discs with concave disc shapes among the double-sided polishing processing discs; When the surface topography of the wafer to be processed is concave, double-sided polishing is performed using a group of polishing discs with convex disc shapes among the double-sided polishing processing discs; When the surface topography of the wafer to be processed is W-shaped, double-sided polishing is performed using a group of polishing discs with an M-shaped disc shape among the double-sided polishing processing discs; When the surface topography of the wafer to be processed is M-shaped, double-sided polishing is performed using a group of W-shaped polishing discs in the double-sided polishing processing disc; The method further comprises: After performing double-sided polishing for a preset time using a double-sided polishing disc of a corresponding disc shape, obtaining real-time disc shape parameters of the double-sided polishing disc; When the difference between the real-time disc type parameter and the historical processing disc type parameter is greater than a preset threshold, the disc type parameter of the double-sided polishing disc is adjusted to the historical processing disc type parameter.

2. The wafer processing method according to claim 1, wherein: The morphology parameters include: The thickness value of the center point of the surface of the wafer to be processed; The average thickness value of the edge of the wafer to be processed; The average thickness value of the first concentric circle on the wafer to be processed, wherein the radius of the first concentric circle is one third to two thirds of the radius of the wafer to be processed.

3. The wafer processing method according to claim 2, wherein: Determining the surface topography of the wafer to be processed according to the topography parameters of the wafer to be processed includes at least one of the following: In the case where the thickness value of the center point of the surface of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, determining that the surface topography of the wafer to be processed is convex; In the case where the thickness value of the center point of the surface of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface topography of the wafer to be processed is concave; When the thickness value of the center point of the surface of the wafer to be processed is less than the edge thickness value of the wafer to be processed, the thickness value of the center point of the surface of the wafer to be processed is less than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is greater than the edge thickness value of the wafer to be processed, determining that the surface topography of the wafer to be processed is M-shaped; When the thickness value of the surface center point of the wafer to be processed is greater than the edge thickness value of the wafer to be processed, the thickness value of the surface center point of the wafer to be processed is greater than the average thickness value of the first concentric circle on the wafer to be processed, and the average thickness value of the first concentric circle on the wafer to be processed is less than the edge thickness value of the wafer to be processed, it is determined that the surface morphology shape of the wafer to be processed is W-shaped.

4. The wafer processing method according to claim 1, wherein: The double-sided polishing processing disc includes two sets of polishing discs arranged opposite to each other, wherein one set of polishing discs is arranged above the wafer to be processed, and the other set of polishing discs is arranged below the wafer to be processed; Each set of polishing discs includes at least two polishing discs; The historical processing disc type parameters include at least one of the following: a cross-sectional shape of each polishing disk in each group of polishing disks; The orientation of each polishing disk in each group of polishing disks.

5. The wafer processing method according to claim 1, wherein: The method further comprises: Obtaining flatness parameters of a wafer after double-sided polishing using a double-sided polishing disc of a corresponding disc shape; wherein the flatness parameters include at least one of the following: global flatness GBIR, local flatness SFQR, and edge flatness ESFQR; When the flatness parameter does not meet the preset parameter requirement, the disc shape parameter of the double-sided polishing disc is adjusted.

6. A wafer processing system, characterized in that: Applied to the wafer processing method according to any one of claims 1 to 5, the wafer processing system comprises: Control equipment, transfer mechanism and double-sided polishing processing plate; The transfer mechanism is connected to the control device; The control device is configured to determine the surface topography of the wafer to be processed based on the topography parameters of the wafer to be processed, and to determine the disc shape of the double-sided polishing disc based on the historical processing disc shape parameters of the double-sided polishing disc; The control device is further configured to determine a double-sided polishing processing disc with a corresponding disc shape for the wafers to be processed with different surface topography shapes, and to send a transfer signal to the transfer mechanism; The transfer mechanism is used to transfer the wafers to be processed with different surface topography shapes to the double-sided polishing processing disc of the corresponding disc shape according to the transfer signal; The double-sided polishing processing disc is used for performing double-sided polishing on the wafer to be processed; The control device is specifically used for at least one of the following: In the case where the surface topography of the wafer to be processed is convex, determining to use a group of polishing discs with concave disc shapes among the double-sided polishing processing discs to perform double-sided polishing; In the case where the surface topography of the wafer to be processed is concave, determining to use a group of polishing discs with convex disc shapes among the double-sided polishing processing discs to perform double-sided polishing; When the surface topography of the wafer to be processed is W-shaped, determining to use a group of polishing discs with an M-shaped disc shape among the double-sided polishing processing discs for double-sided polishing; When the surface topography of the wafer to be processed is M-shaped, determining to use a group of W-shaped polishing discs among the double-sided polishing discs for double-sided polishing; Wherein, the control device is further used for: After performing double-sided polishing for a preset period of time using a double-sided polishing disc of a corresponding disc shape, obtaining real-time disc shape parameters of the double-sided polishing disc; When the difference between the real-time disc type parameter and the historical processing disc type parameter is greater than a preset threshold, the disc type parameter of the double-sided polishing disc is adjusted to the historical processing disc type parameter.

7. A wafer processing device comprising: A transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor; wherein the processor is configured to read the program in the memory to implement the steps of the wafer processing method as described in any one of claims 1 to 5.

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