Drive protection circuit, drive protection method and application thereof for power semiconductor device

Abstract

The present application provides a driving protection circuit, a driving protection method and an application thereof for a power semiconductor device. The driving protection circuit includes: a turn-on module and a turn-off module connected in parallel between the gate and the cathode of the power semiconductor device. The turn-off module includes: a switch group and a turn-off capacitor group, and the switch group is connected in series with the turn-off capacitor group; in the switch group, the switch group includes a normally-closed switch group. Through the present application, the technical problems in the prior art such as the difficult parameter design, high cost and large static loss of the driving protection circuit can be solved, and the tolerance of the power semiconductor device to the rising rate of the anode-cathode voltage can be improved by means of the improvement of the driving protection circuit.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of semiconductor devices, and in particular, to a driving protection circuit, a driving protection method and an application thereof for a power semiconductor device.

Background Art

[0002] In order to drive a semiconductor device, in the prior art, it is known that the driving protection circuit of the power semiconductor device 1 includes: a turn-off module 2, a turn-on module 3, a maintaining module 4, and a protection module 5. Figure 1

[0003] When the converter formed by the power semiconductor device 1 is in the black start process, that is, the converter starts when the entire system is powered off (it does not exclude that an isolated small power grid still maintains operation), a relatively large rising-rate anode-cathode voltage V will be generated between the gate and the cathode of the power semiconductor device. This voltage will generate a displacement current on the parasitic capacitance of the gate-cathode PN junction. At this time, the drive is not powered on, and all the switch groups in the driving protection circuit are in the off state. The displacement current can only be injected into the gate of the power semiconductor device, which may cause the power semiconductor device to be mis-triggered, and the converter will also have a bridge arm short circuit, resulting in serious system failures and black start failures.

[0004] In order to solve the above problems, a protection module 5 is also provided in the prior art. Specifically, active protection methods and passive protection methods can be adopted. For the protection module, the following problems exist:

[0005] 1) High cost and poor reliability: Adding a protection module requires additional circuits, increasing the driving cost and reducing the reliability of the converter.

[0006] 2) Difficult design: It is difficult to balance the impedance design of the passive protection module 5. If the impedance is too small, the losses of the turn-on module and the maintaining module will increase, and the conduction characteristics of the power semiconductor device 1 will be reduced. If the impedance is too large, the discharged displacement current will be reduced, and the tolerance of the power semiconductor device 1 to the large rising-rate anode-cathode voltage V will be reduced. AK Tolerance ability;

[0007] 3) High static loss: In order to further increase the tolerance of the power semiconductor device to the large rising-rate anode-cathode voltage V, AK multiple normally closed switches need to be connected in parallel to reduce the on-state impedance of the active protection module 5. Therefore, after the drive is powered on, a continuous turn-off command needs to be given, increasing the static loss.

Summary of the Invention

[0008] ​In view of this, the present application provides a drive protection circuit, a drive protection method and an application thereof for a power semiconductor device, so as to solve the technical problems of difficult parameter design, high cost and large static loss of the drive protection circuit in the prior art. By improving the drive protection circuit, the tolerance of the power semiconductor device to the rate of rise of the anode-cathode voltage is enhanced.

[0009] In a first aspect, the present application provides a drive protection circuit for a power semiconductor device, including: a turn-on module and a turn-off module connected in parallel between the gate and the cathode of the power semiconductor device,

[0010] The turn-off module includes: a switch group and a turn-off capacitor group,

[0011] The switch group is connected in series with the turn-off capacitor group;

[0012] The switch group includes: a normally closed switch group.

[0013] Through the present application, the drive protection circuit of the power semiconductor device does not need to set an additional protection module, reduces the number of components, simplifies the design process and control logic, reduces the drive cost and static loss, improves the overall reliability, and improves the tolerance of the power semiconductor device to the rate of rise of the anode-cathode voltage by changing the topology of the turn-off module. It can solve the technical problems of difficult parameter design, high cost and large static loss of the drive protection circuit in the prior art. By improving the drive protection circuit, the tolerance of the power semiconductor device to the rate of rise of the anode-cathode voltage is enhanced.

[0014] In a possible way, the normally closed switch group includes a depletion-type semiconductor switch or a normally closed mechanical switch, or a plurality of parallel-connected depletion-type semiconductor switches and / or normally closed mechanical switches.

[0015] In a possible way, the depletion-type semiconductor switch includes at least one of a depletion-type MOSFET, a JEFT, and a depletion-type HEMT; and / or, the normally closed mechanical switch includes at least one of a normally closed relay, a normally closed contactor, and a circuit breaker.

[0016] In a possible way, the turn-off capacitor group includes a ceramic capacitor group or an electrolytic capacitor group,

[0017] The ceramic capacitor group includes a ceramic capacitor or a plurality of parallel-connected ceramic capacitors;

[0018] The electrolytic capacitor group includes an electrolytic capacitor or a plurality of parallel-connected electrolytic capacitors.

[0019] In a possible way, the turn-off capacitor group includes a ceramic capacitor group and an electrolytic capacitor group;

[0020] The ceramic capacitor bank includes one ceramic capacitor or multiple ceramic capacitors connected in parallel;

[0021] The electrolytic capacitor bank includes one electrolytic capacitor or multiple electrolytic capacitors connected in parallel;

[0022] The ceramic capacitor bank is connected in parallel with the electrolytic capacitor bank.

[0023] In one possible way, the switch group further includes a normally open switch group, and the normally open switch group is connected in parallel at both ends of the normally closed switch group.

[0024] In one possible way, the normally open switch group includes one enhancement-mode semiconductor switch or multiple enhancement-mode semiconductor switches connected in parallel.

[0025] In one possible way, the enhancement-mode semiconductor switch includes at least one of enhancement-mode MOSFET, IGBT, or enhancement-mode HEMT.

[0026] In one possible way, it further includes: a maintaining module;

[0027] The maintaining module is connected in parallel between the gate and the cathode of the power semiconductor device, and is used to inject current into the gate to keep the power semiconductor device conducting continuously.

[0028] In a second aspect, the present application provides a driving and protecting method for a power semiconductor device, which is applied to the driving and protecting circuit described in the first aspect of the present application, and specifically includes:

[0029] Receiving a control signal, where the control signal is used to: switch the state of the switch group to realize the connection or disconnection of the turn-off capacitor bank.

[0030] In a third aspect, the present application provides a power semiconductor device, and the driving and protecting circuit described in the first aspect is used to drive the power semiconductor device to work.

[0031] In one possible way, the power semiconductor device is one of IGBT, GTO, Thyristor, and IGCT.

[0032] In a fourth aspect, the present application provides an electronic device, and the power semiconductor device described in the third aspect is used as a control element and / or a current / voltage switching element of the electronic device.

[0033] It should be understood that the technical solutions of the second to fourth aspects of the present invention are consistent with those of the first aspect of the present invention, and the beneficial effects obtained by each aspect and the corresponding feasible implementation manners are similar, and will not be elaborated here.

Description of the Drawings

[0034] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0035] Figure 1 It is a structural diagram of a driving protection circuit for a power semiconductor device in the prior art;

[0036] Figure 2 It is a structural diagram of a driving protection circuit for a power semiconductor device provided by an embodiment of the present application;

[0037] Figure 3 It is a structural diagram of a driving protection circuit for a power semiconductor device provided by another embodiment of the present application;

[0038] Figure 4 It is a circuit diagram of a turn-off module shown in an exemplary embodiment provided by the present application;

[0039] Figure 5 It is a circuit diagram of a turn-off module shown in another exemplary embodiment provided by the present application;

[0040] Figure 6 It is a circuit diagram of a turn-off module shown in another exemplary embodiment provided by the present application;

[0041] Figure 7 It is a circuit diagram of a turn-off module shown in another exemplary embodiment provided by the present application.

[0042] 1 - Power semiconductor device; 2 - Turn-off module; 3 - Turn-on module; 4 - Maintenance module; 5 - Protection module;

[0043] 21 - Normally open switch group; 22 - Normally closed switch group; 23 - Turn-off capacitor group; 221 - Depletion-type semiconductor switch; 222 - Normally closed mechanical switch; 211 - Enhancement-type semiconductor switch; 231 - Electrolytic capacitor; 232 - Ceramic capacitor.

Specific Embodiments

[0044] To better understand the technical solutions of the embodiments of the present invention, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0045] It should be clear that the described embodiments are only some embodiments of the embodiments of the present invention, rather than all embodiments. Based on the embodiments in the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope protected by the embodiments of the present invention.

[0046] The terms used in the embodiments of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the embodiments of the present invention. The singular forms "a", "the" and "said" used in the embodiments of the present invention and the appended claims are also intended to include the plural forms unless the context clearly dictates otherwise.

[0047] In order to drive a semiconductor device, in the prior art, in combination Figure 1 As can be seen, the drive protection circuit of the power semiconductor device 1 includes: a turn-off module 2, a turn-on module 3, a maintenance module 4, and a protection module 5.

[0048] Specifically, the turn-off module 2 is connected in parallel between the gate G and the cathode K of the power semiconductor device 1. The turn-off module 2 is usually composed of a switch group and a negative voltage turn-off capacitor group connected in series. When the switch group is closed, the negative voltage turn-off capacitor group provides a reverse voltage bias for the gate-cathode, and the power semiconductor device 1 is turned off, and a high-impedance state exists between the anode A and the cathode K. These switch groups are usually composed of a large number of normally open switches connected in parallel and will only close when the drive power supply is working properly and receives a control instruction, otherwise they are in an open state, and the negative voltage of the turn-off capacitor group cannot act on the power semiconductor device 1.

[0049] The turn-on module 3 and the maintenance module 4 are also connected in parallel between the gate G and the cathode K of the power semiconductor device 1 and are both usually composed of a switch group and a current source connected in series. When the switch group is closed, the current sources of the turn-on module 3 and the maintenance module 4 respectively inject a steep-wave strong trigger current pulse and a constant-amplitude maintenance current into the gate G to ensure reliable and uniform conduction of the power semiconductor device 1, and a low-impedance state exists between the anode A and the cathode K.

[0050] When the converter composed of the power semiconductor device 1 is in the black start process, that is, the converter starts when the entire system is powered off (isolated small power grids still operating are not excluded), a relatively large rate-of-rise anode-cathode voltage V will be generated between the gate and the cathode of the power semiconductor device AK , and this voltage will generate a displacement current on the parasitic capacitance of the gate-cathode PN junction. At this time, the drive is not powered on, and all the switch groups in the drive protection circuit are in the off state. The displacement current can only be injected into the gate of the power semiconductor device, which will cause the power semiconductor device to be mis-triggered at this time, and the converter will also have a bridge arm short circuit, resulting in serious system failures and black start failures.

[0051] To solve the above problems, a protection module 5 is also provided in the prior art. Specifically, an active protection method and a passive protection method can be adopted. Its main purpose is to provide a discharge path for the displacement current when the drive power supply is not yet energized, thereby improving the tolerance of the power semiconductor device to the rate of rise of the anode-cathode voltage V AK .

[0052] For the active method, the active protection module 5 uses a normally closed switch, which remains conducting when the drive is not energized, forming a low-impedance path between the gate and cathode through which the displacement current preferentially passes, and is controlled to turn off after the drive is started and energized. The normally closed switch includes a normally closed relay, a depletion-type field-effect transistor, etc. The passive protection module uses a series of diodes and resistors to provide a low-impedance path for the gate current regardless of whether the drive is energized or not.

[0053] Regarding the protection module, there are the following problems:

[0054] 1) High cost and poor reliability: Adding a protection module requires additional circuitry, increasing the drive cost and reducing the reliability of the converter.

[0055] 2) Difficult design: It is difficult to balance the impedance design of the passive protection module 5. If the impedance is too small, it will increase the losses of the turn-on module and the maintenance module and reduce the conduction characteristics of the power semiconductor device 1. If the impedance is too large, it will reduce the discharged displacement current and reduce the tolerance of the semiconductor device 1 to the large rising rate of the anode-cathode voltage V AK tolerance ability;

[0056] 3) High static loss: To further increase the tolerance of the semiconductor device 1 to the large rising rate of the anode-cathode voltage V AK tolerance ability, multiple normally closed switches need to be connected in parallel to reduce the on-state impedance of the active protection module 5. For this reason, a turn-off instruction needs to be continuously given after the drive is energized, increasing the static loss.

[0057] In summary, in the prior art, the parameter design of the drive protection circuit is difficult, costly, and has a large static loss, and the tolerance of the power semiconductor device to the rising rate of the anode-cathode voltage needs to be improved.

[0058] To solve the above problems, referring to Figure 2 This application provides a drive protection circuit for a power semiconductor device, including: a turn-on module 3 and a turn-off module 2 connected in parallel between the gate and cathode of the power semiconductor device 1,

[0059] The turn-off module 2 includes: a switch group and a turn-off capacitor group,

[0060] The switch group is connected in series with the turn-off capacitor group;

[0061] In the switch group, the switch group includes a normally closed switch group.

[0062] When the drive protection circuit does not receive an electrical signal, the normally closed switch group remains closed. At this time, the turn-off capacitor group is connected between the gate and cathode of the power semiconductor device, and the anode-cathode voltage V AKThe gate displacement current generated by the rising rate injects into the turn-off capacitor bank, slowing down the rising speed of the gate-cathode voltage and preventing the power semiconductor device from being triggered into conduction; when the drive is powered on, the normally closed switch bank is controlled by a control signal to operate, closing or opening, and connecting or disconnecting the turn-off capacitor bank as required.

[0063] Preferably, as Figure 3 shown, the drive protection circuit of the power semiconductor device according to the embodiment of the present application further includes a maintenance module 4, and the maintenance module 4 is connected in parallel between the gate and the cathode of the power semiconductor device 1 for injecting current into the gate to keep the power semiconductor device conducting continuously.

[0064] By contrast Figure 2-3 and Figure 1 , the drive protection circuit of the power semiconductor device in the embodiment of the present application does not need to set up an additional protection module, reducing the number of components, simplifying the design process and control logic, reducing the drive cost and static loss, improving the overall reliability. At the same time, the turn-off capacitor bank has a lower impedance to displacement current and a better discharge and absorption effect, further improving the tolerance of the power semiconductor device to the rising rate of the anode-cathode voltage, reducing the design difficulty of designers, and improving the tolerance of the power semiconductor device to the rising rate of the anode-cathode voltage by changing the topology of the turn-off module.

[0065] As Figure 4 shown, in some embodiments, the switch bank only includes a normally closed switch bank, that is to say, at this time, the turn-off module 2 includes a series-connected normally closed switch bank 22 and a turn-off capacitor bank 23. In this context, when the drive is not powered on, the normally closed switch bank 22 is not controlled and remains conducting. At this time, the turn-off capacitor bank 23 is connected between the gate and the cathode of the power semiconductor device 1, and the anode-cathode voltage V AK The gate displacement current generated by the rising rate injects into the large-capacity turn-off capacitor bank 23, slowing down the rising speed of the gate-cathode voltage and preventing the power semiconductor device from being triggered into conduction; when the drive is powered on, the normally closed switch bank 22 is controlled by a control signal to operate, closing or opening, and connecting or disconnecting the turn-off capacitor bank as required.

[0066] For the normally closed switch bank, a depletion-type semiconductor switch or a normally closed mechanical switch can be specifically used, or multiple parallel-connected depletion-type semiconductor switches and / or normally closed mechanical switches. Specifically, the normally closed switch bank can only include a depletion-type semiconductor switch or a normally closed mechanical switch, or can include multiple parallel-connected depletion-type semiconductor switches or multiple parallel-connected normally closed mechanical switches, or can include at least one depletion-type semiconductor switch and at least one normally closed mechanical switch connected in parallel. Among them, the on / off condition of the depletion-type semiconductor switch is: it closes and conducts when a zero or positive bias voltage signal is input to the gate, and disconnects and cuts off when a negative bias voltage signal is input.

[0067] Specifically, the depletion-type semiconductor switch includes at least one of a depletion-type MOSFET, a JEFT, and a depletion-type HEMT; the normally-closed mechanical switch includes at least one of a normally-closed relay, a normally-closed contactor, and a circuit breaker.

[0068] Regarding the turn-off capacitor bank 23, specifically, it includes a ceramic capacitor bank or an electrolytic capacitor bank.

[0069] The ceramic capacitor bank includes one ceramic capacitor or multiple ceramic capacitors connected in parallel.

[0070] The electrolytic capacitor bank includes one electrolytic capacitor or multiple electrolytic capacitors connected in parallel.

[0071] Alternatively, the turn-off capacitor bank 23 specifically includes a ceramic capacitor bank and an electrolytic capacitor bank.

[0072] The ceramic capacitor bank is connected in parallel with the electrolytic capacitor bank.

[0073] That is, in some embodiments, the turn-off capacitor bank 23 only includes a ceramic capacitor bank; in some other embodiments, the turn-off capacitor bank 23 only includes an electrolytic capacitor bank; in still some other embodiments, the turn-off capacitor bank 23 includes both a ceramic capacitor bank and an electrolytic capacitor bank, and the ceramic capacitor bank is connected in parallel with the electrolytic capacitor bank.

[0074] As an exemplary embodiment, as Figure 4 shown, the normally-closed switch group 22 includes multiple depletion-type semiconductor switches 221 connected in parallel; the turn-off capacitor bank 23 includes a ceramic capacitor 232 and an electrolytic capacitor 231 connected in parallel.

[0075] Figure 5 Shows the turn-off module circuit diagram of another exemplary embodiment provided by the present application. Comparing Figure 4 and Figure 5 the embodiments shown, it can be seen that compared with Figure 4 the embodiment shown, Figure 5 the turn-off module shown in Figure 5 also includes: a normally-open switch group 21. Combining

[0076] it can be known that the normally-open switch group is connected in parallel at both ends of the normally-closed switch group 22.

[0077] In contrast to the aforementioned normally-closed switch group, in the embodiments provided by the present application, an enhancement-type semiconductor switch 211 is used in parallel to form the normally-open switch group. In other words, the normally-open switch group includes one enhancement-type semiconductor switch or multiple enhancement-type semiconductor switches connected in parallel.

[0078] Similarly, in contrast to depletion-mode semiconductor switches, the on / off conditions of enhancement-mode semiconductor switches are as follows: they turn on and conduct when a positive bias voltage signal is input to the gate, and turn off and cut off when a zero or negative bias voltage signal is input.

[0079] Specifically, the enhancement-mode semiconductor switch includes at least one of an enhancement-mode MOSFET, an IGBT, or an enhancement-mode HEMT.

[0080] Similar to the previous embodiment, referring to Figure 5 As can be seen, the turn-off capacitor bank 23 specifically includes a ceramic capacitor bank and an electrolytic capacitor bank. Among them, the ceramic capacitor bank includes one ceramic capacitor 232, the electrolytic capacitor bank includes three electrolytic capacitors 231, and the ceramic capacitor 232 and the three electrolytic capacitors 231 are all connected in parallel.

[0081] As an alternative embodiment, the normally-closed switch group includes one normally-closed mechanical switch or multiple parallel-connected normally-closed mechanical switches. The normally-closed mechanical switch includes at least one of a normally-closed relay, a normally-closed contactor, and a circuit breaker.

[0082] As Figure 6 As shown in an exemplary embodiment, the normally-closed switch group 22 includes multiple parallel-connected normally-closed mechanical switches 222, the normally-open switch group 21 includes multiple parallel-connected enhancement-mode semiconductor switches 211, and the turn-off capacitor bank 23 includes one ceramic capacitor 232 and three electrolytic capacitors 231 connected in parallel; the normally-closed switch group 22 is connected in parallel with the normally-open switch group 21, and both are connected in series with the turn-off capacitor bank 23.

[0083] When the drive is not powered, the normally-closed switch group 22 is not controlled and remains conducting. At this time, the turn-off capacitor bank 23 is connected between the gate and cathode of the power semiconductor device 1, and the gate displacement current generated by the rising rate of the anode-cathode voltage V AK is injected into the large-capacity turn-off capacitor bank 23, slowing down the rising speed of the gate-cathode voltage and preventing the power semiconductor device from being triggered into conduction; when the drive is powered, the normally-closed switch group 22 is controlled by a control signal to remain open, and the normally-open switch group 21 is controlled by a control signal to operate, closing or opening as needed to connect or disconnect the turn-off capacitor bank.

[0084] As yet another alternative embodiment, the normally-closed switch group includes at least one depletion-mode semiconductor switch and at least one normally-closed mechanical switch connected in parallel. The depletion-mode semiconductor switch includes at least one of a depletion-mode MOSFET, a JEFT, and a depletion-mode HEMT; the normally-closed mechanical switch includes at least one of a normally-closed relay, a normally-closed contactor, and a circuit breaker.

[0085] As Figure 7An exemplary embodiment is shown. The normally-closed switch group 22 includes a plurality of depletion-type semiconductor switches 221 and a plurality of normally-closed mechanical switches 222 connected in parallel, the normally-open switch group 21 includes a plurality of enhancement-type semiconductor switches 211 connected in parallel, and the turn-off capacitor group 23 includes a ceramic capacitor 232 and a plurality of electrolytic capacitors 231 connected in parallel; the normally-closed switch group 22 is connected in parallel with the normally-open switch group 21, and both are connected in series with the turn-off capacitor group 23.

[0086] When the drive is not powered, the normally-closed switch group 22 is not controlled and remains conducting. At this time, the turn-off capacitor group 23 is connected between the gate and cathode of the power semiconductor device 1, and the anode-cathode voltage V AK The gate displacement current generated by the rising rate is injected into the large-capacity turn-off capacitor group 23, slowing down the rising speed of the gate-cathode voltage and preventing the power semiconductor device from being triggered into conduction; when the drive is powered, the normally-closed mechanical switch group in the normally-closed switch group 22 is controlled by a control signal to remain open, and the depletion-type semiconductor switch group in the normally-open switch group 21 and the normally-closed switch group 22 are controlled by the control signal to cooperate, closing or opening simultaneously, and connecting or disconnecting the turn-off capacitor group as needed.

[0087] The above is the drive protection circuit of the power semiconductor device provided by the present application. On the basis of the foregoing embodiments, the present application also provides a drive protection method for a power semiconductor device, which specifically includes:

[0088] Receiving a control signal for switching the state of the switch group to connect or disconnect the turn-off capacitor group.

[0089] It can be understood that when the drive is not powered, a zero voltage signal is input to the gate of the switch group, and the normally-closed switch group is not controlled and remains conducting, connecting the turn-off capacitor group between the gate and cathode of the power semiconductor device, and the anode-cathode voltage V AK The gate displacement current generated by the rising rate is injected into the large-capacity turn-off capacitor group, slowing down the rising speed of the gate-cathode voltage and preventing the power semiconductor device from being triggered into conduction. In this case, no control signal is required.

[0090] When the drive is powered, the normally-closed switch group and the normally-open switch group are controlled by the control signal to cooperate, closing or opening simultaneously, and connecting or disconnecting the turn-off capacitor group as needed.

[0091] It can be understood that in the case where the switch group of the turn-off module only includes a normally-closed switch group, when the drive is powered, the normally-closed switch group is controlled by the control signal to operate, closing or opening, and connecting or disconnecting the turn-off capacitor group as needed.

[0092] Preferably, in the case where the switch group of the turn-off module only includes a normally-closed switch group, and the normally-closed switch group includes a normally-closed mechanical switch and a depletion-type semiconductor switch, due to the slow response speed of the normally-closed mechanical switch, the normally-closed mechanical switch can be kept open, and the depletion-type semiconductor switch in the normally-closed switch group is controlled by a control signal to work, close or open, and connect or disconnect the turn-off capacitor bank as required.

[0093] Preferably, in the case where the switch group of the turn-off module includes a normally-closed switch group and a normally-open switch group, and the normally-closed switch group includes a normally-closed mechanical switch, due to the slow response speed of the normally-closed mechanical switch, the normally-closed mechanical switch can be kept open, and the normally-open switch group or the depletion-type semiconductor switch in the normally-open switch group and the normally-closed switch group is controlled by a control signal to work, close or open, and connect or disconnect the turn-off capacitor bank as required.

[0094] As an alternative implementation, when the drive is energized, the control signal provided by the present application includes: a first control signal and a second control signal;

[0095] First, the first control signal in the present application is described:

[0096] The first control signal: is used to control the switch group to close, and connect the turn-off capacitor bank between the gate and cathode of the power semiconductor device.

[0097] Exemplarily, assuming that the switch group only includes a normally-closed switch group, when the drive protection circuit receives the first control signal, the normally-closed switch group continues to remain closed, and the turn-off capacitor bank is connected to the drive protection circuit.

[0098] Assuming that the switch group includes a normally-closed switch group and a normally-open switch group, when the drive protection circuit receives the first control signal, the normally-closed switch group continues to remain closed, and the normally-open switch group closes, and the turn-off capacitor bank is connected to the drive protection circuit.

[0099] Then, the second control signal is described:

[0100] Here, the second control signal: is used to control the switch group to open and disconnect the connection of the turn-off capacitor bank.

[0101] Exemplarily, assuming that the switch group only includes a normally-closed switch group, when the drive protection circuit receives the second control signal, the normally-closed switch group opens, and the turn-off capacitor bank is disconnected from the drive protection circuit.

[0102] Assuming that the switch group includes a normally-closed switch group and a normally-open switch group, when the drive protection circuit receives the second control signal, the normally-open switch group continues to remain open, and the normally-closed switch group opens, and the turn-off capacitor bank is disconnected from the drive protection circuit.

[0103] Based on the foregoing embodiments, the present application further provides a power semiconductor device, which adopts the drive protection circuit described in the foregoing embodiments and is used to drive the power semiconductor device to operate.

[0104] Specifically, the power semiconductor device is one of IGBT, GTO, Thyristor, and IGCT.

[0105] Based on the foregoing embodiments, the present application further provides an electronic device, which adopts the power semiconductor device described in the foregoing embodiments as the control element and / or current / voltage switching element of the electronic device.

[0106] In the description of the embodiments of the present invention, the descriptions with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the embodiments of the present invention. In the embodiments of the present invention, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in the embodiments of the present invention and the features of the different embodiments or examples.

[0107] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the embodiments of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0108] Depending on the context, the word "if" as used herein can be interpreted as "when" or "while" or "in response to determining" or "in response to detecting". Similarly, depending on the context, the phrase "if determined" or "if detected (stated condition or event)" can be interpreted as "when determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)".

[0109] In several embodiments provided by the embodiments of the present invention, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections between each other can be through some interfaces. The indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms.

[0110] The above are only the preferred embodiments of the embodiments of the present invention and are not intended to limit the embodiments of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the embodiments of the present invention shall be included within the scope of protection of the embodiments of the present invention.

Claims

1. A driving protection circuit for a power semiconductor device, characterized in that: include: The turn-on module and the turn-off module are connected in parallel between the gate and cathode of the power semiconductor device. The shutdown module includes: a switch group and a shutdown capacitor group, The switch group is connected in series with the turn-off capacitor group; The switch group includes: a normally closed switch group; When the driving protection circuit does not receive an electrical signal, the normally closed switch group remains closed. At this time, the cut-off capacitor group is connected between the gate and cathode of the power semiconductor device, and the positive-cathode voltage V AK The gate displacement current generated by the rising rate is injected into the turn-off capacitor group, which slows down the rising speed of the gate cathode voltage and prevents the power semiconductor device from being triggered to turn on; when the drive is energized, the normally closed switch group is controlled by the control signal to close or open, and the turn-off capacitor group is connected or removed as needed.

2. The driving protection circuit according to claim 1, characterized in that: The normally closed switch group includes a depletion-type semiconductor switch or a normally closed mechanical switch, or a plurality of parallel-connected depletion-type semiconductor switches and / or normally closed mechanical switches.

3. The driving protection circuit according to claim 2, characterized in that: The depletion-type semiconductor switch includes: at least one of a depletion-type MOSFET, a JFET and a depletion-type HEMT; and / or the normally closed mechanical switch includes: at least one of a normally closed relay, a normally closed contactor and a circuit breaker.

4. The driving protection circuit according to claim 1, characterized in that: The shutdown capacitor group includes a ceramic capacitor group or an electrolytic capacitor group, The ceramic capacitor group includes one ceramic capacitor or a plurality of ceramic capacitors connected in parallel; The electrolytic capacitor group includes one electrolytic capacitor or a plurality of electrolytic capacitors connected in parallel.

5. The driving protection circuit according to claim 1, characterized in that: The shut-off capacitor group includes a ceramic capacitor group and an electrolytic capacitor group; The ceramic capacitor group includes one ceramic capacitor or a plurality of ceramic capacitors connected in parallel; The electrolytic capacitor group includes one electrolytic capacitor or a plurality of electrolytic capacitors connected in parallel; The ceramic capacitor group is connected in parallel with the electrolytic capacitor group.

6. The driving protection circuit according to any one of claims 1 to 5, characterized in that: The switch group further includes a normally open switch group, and the normally open switch group is connected in parallel to two ends of the normally closed switch group.

7. The driving protection circuit according to claim 6, characterized in that: The normally open switch group includes one enhanced semiconductor switch or a plurality of enhanced semiconductor switches connected in parallel.

8. The driving protection circuit according to claim 7, characterized in that: The enhancement mode semiconductor switch includes at least one of an enhancement mode MOSFET, an IGBT or an enhancement mode HEMT.

9. The driving protection circuit according to claim 1, characterized in that: Also includes: maintenance module; The maintenance module is connected in parallel between the gate and cathode of the power semiconductor device, and is used to inject current into the gate to keep the power semiconductor device turned on continuously.

10. A driving protection method for a power semiconductor device, characterized in that: A driving protection circuit as claimed in any one of claims 1 to 9, comprising: A control signal is received, wherein the control signal is used to switch the state of the switch group to achieve connection or disconnection of the shutdown capacitor group.

11. A power semiconductor device, characterized in that: The power semiconductor device is driven to operate by the driving protection circuit as described in any one of claims 1 to 9.

12. The device according to claim 11, characterized in that The power semiconductor device is one of IGBT, GTO, Thyristor and IGCT.

13. An electronic device, characterized in that: The power semiconductor device according to claim 11 or 12 is used as a control element and / or a current / voltage switching element of the electronic device.

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