Organic-inorganic hybrid perovskite transistor-based sensing and computing devices

Abstract

This invention discloses an integrated sensing and computing device based on an organic-inorganic hybrid perovskite transistor, comprising: a gate layer, a gate dielectric layer, a heterojunction channel layer, and a source / drain electrode layer sequentially disposed therefrom; the heterojunction channel layer comprises: an organic-inorganic hybrid perovskite layer and a fullerene derivative layer interconnected thereto; wherein, the organic-inorganic hybrid perovskite layer is connected to the gate dielectric layer, and the fullerene derivative layer is connected to the source / drain electrode layer; the fullerene derivative layer is used to passivate the organic-inorganic hybrid perovskite layer. Because the passivation effect of the fullerene derivative layer can not only effectively slow down the degradation rate of the organic-inorganic hybrid perovskite layer and improve device stability, but also effectively slow down the recovery time of the device after the removal of the detected gas through charge transfer, thereby enabling the device to perform computational functions in addition to gas sensing.

Description

Technical Field

[0001] The present invention relates to the technical field of transistor devices, and in particular to an organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device. Background Art

[0002] With the rapid development of the Internet of Things and artificial intelligence, the use of sensing nodes has shown an explosive growth trend. A large part of the raw data generated by these sensor devices is unstructured redundant data, which will not have any effect on the perception and processing of information. Due to different preparation technologies and functional requirements, the sensing system and the computing system are physically separated. Therefore, all data collected by the sensors need to be uniformly transmitted to the cloud computing system or local computing unit. This process not only causes serious time delays and energy consumption, but also has a huge impact on communication bandwidth and security. This limitation has a serious impact on platforms that rely heavily on a large number of sensors (such as autonomous driving and intelligent robots). In order to overcome this problem, it is necessary to transform the computing-centric architecture model into a data-centric sensing and computing integrated architecture.

[0003] In the existing technology, the integrated sensing and computing device can perform tasks such as data collection, pre-processing, and encryption within the sensor, which can effectively reduce or eliminate data transmission and conversion, and is considered to be a new direction for deep learning to empower sensor systems. Current integrated sensing and computing technology mainly focuses on bionic vision and bionic touch, and there is relatively little research on bionic olfaction. The main reason is that it is difficult to organically integrate the bionic synapse with integrated sensing and computing functions into the olfactory sensor, making it impossible to achieve in-sense computing.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] The technical problem to be solved by the present invention is that, in response to the above-mentioned defects of the prior art, a sensing and computing integrated device based on an organic-inorganic hybrid perovskite transistor is provided, aiming to solve the problem that it is difficult for sensors in the prior art to form sensing and computing integrated functions.

[0006] The technical solution adopted by the present invention to solve the technical problem is as follows:

[0007] An organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device, comprising: a gate layer, a gate dielectric layer, a heterojunction channel layer and a source-drain electrode layer arranged in sequence; the heterojunction channel layer comprises:

[0008] An organic-inorganic hybrid perovskite layer and a fullerene derivative layer connected to each other; wherein the organic-inorganic hybrid perovskite layer is connected to the gate dielectric layer, and the fullerene derivative layer is connected to the source-drain electrode layer;

[0009] The fullerene derivative layer is used to passivate the organic-inorganic hybrid perovskite layer.

[0010] The organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device, wherein when the action time and reaction intensity of the organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device and the gas are different, the organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device exhibits nonlinear relaxation to simulate the olfactory synapse.

[0011] The organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device, wherein the fullerene derivative layer includes: [6,6]-phenyl-C61-butyric acid isomethyl ester;

[0012] The organic-inorganic hybrid perovskite includes: MAPbI 3 or (PEA) 2 PbI 4 .

[0013] The organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device, wherein the thickness of the fullerene derivative layer is less than 20 nm;

[0014] The thickness of the organic-inorganic hybrid perovskite layer is 100nm to 500nm.

[0015] The organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device, wherein the source-drain electrode layer is a gold-chromium double-layer metal electrode; the thickness of the source-drain electrode layer is 10nm to 60nm.

[0016] The organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device, wherein the gate layer is a heavily doped polysilicon gate; and the gate dielectric layer is a 300-nanometer silicon dioxide layer on the surface.

[0017] The organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device, wherein the gate layer is a gold thin film layer, and the gate dielectric layer is an aluminum oxide layer; a flexible material layer is provided on the side of the gate layer away from the gate dielectric layer.

[0018] In the organic-inorganic hybrid perovskite transistor-type integrated sensing and computing device, the flexible material layer is selected from a polyimide layer or a polyethylene terephthalate layer.

[0019] A method for preparing an organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device as described in any one of the above, comprising the steps of:

[0020] Providing a gate layer covered with a gate dielectric layer, an organic-inorganic hybrid perovskite precursor solution, and a fullerene derivative solution;

[0021] Using the organic-inorganic hybrid perovskite precursor solution, preparing an organic-inorganic hybrid perovskite layer on the gate dielectric layer of the gate layer covered with the gate dielectric layer;

[0022] Using the fullerene derivative solution, preparing a fullerene derivative layer on the organic-inorganic hybrid perovskite layer;

[0023] A source-drain electrode layer is prepared on the fullerene derivative layer to obtain an organic-inorganic hybrid perovskite transistor-type sensor-computing integrated device.

[0024] The method for preparing the organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device, wherein the organic-inorganic hybrid perovskite layer is prepared by a one-step spin coating method assisted by an anti-solvent;

[0025] The fullerene derivative layer is prepared by spin coating;

[0026] The source-drain electrode layer is prepared by thermal evaporation.

[0027] Beneficial effects: The passivation effect of the fullerene derivative layer can not only effectively slow down the deterioration rate of the organic-inorganic hybrid perovskite layer and improve the stability of the device; but also effectively slow down the recovery time of the device after the detected gas is removed through mutual charge transfer, so that the device has a computing function on the basis of realizing gas sensing. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the structure of an organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device in an embodiment of the present invention.

[0029] Figure 2 It is a schematic structural diagram of a flexible organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device in an embodiment of the present invention.

[0030] Figure 3 It is a flow chart of a method for preparing an organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device in an embodiment of the present invention.

[0031] Figure 4 This is a first response time test diagram of the organic-inorganic hybrid perovskite transistor-type integrated sensing and computing device in an embodiment of the present invention.

[0032] Figure 5 This is a second response time test diagram of the organic-inorganic hybrid perovskite transistor-type integrated sensing and computing device in an embodiment of the present invention.

[0033] Figure 6 This is the third response time test diagram of the organic-inorganic hybrid perovskite transistor-type integrated sensing and computing device in an embodiment of the present invention.

[0034] Description of reference numerals:

[0035] 10. Gate layer; 20. Gate dielectric layer; 30. Heterojunction channel layer; 31. Organic-inorganic hybrid perovskite layer; 32. Fullerene derivative layer; 40. Source-drain electrode layer; 41. Source; 42. Drain; 50. Flexible material layer; D2. Thickness; D31. Thickness; D32. Thickness; D4. Thickness. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the present invention clearer and more specific, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0037] Please also see Figure 1-Figure 2 The present invention provides some embodiments of an organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device.

[0038] like Figure 1 As shown, the organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device of the present invention includes: a gate layer 10, a gate dielectric layer 20, a heterojunction channel layer 30 and a source-drain electrode layer 40 arranged in sequence; the heterojunction channel layer 30 includes: an organic-inorganic hybrid perovskite layer 31 and a fullerene derivative layer 32 connected to each other; wherein the organic-inorganic hybrid perovskite layer 31 is connected to the gate dielectric layer 20, and the fullerene derivative layer 32 is connected to the source-drain electrode layer 40; the fullerene derivative layer 32 is used to passivate the organic-inorganic hybrid perovskite layer 31.

[0039] Specifically, the current prior art research on organic-inorganic hybrid perovskite transistor gas sensors is only focused on sensing, mainly used to improve the gas sensing response speed and improve the sensing stability of the device. The present application uses a heterojunction channel layer 30 to form a transistor-type sensing and computing integrated device. The heterojunction channel layer 30 includes: an organic-inorganic hybrid perovskite layer 31 and a fullerene derivative layer 32. The fullerene derivative layer 32 is located between the organic-inorganic hybrid perovskite layer 31 and the drain-source electrode layer, and the organic-inorganic hybrid perovskite layer 31 is passivated to form a heterojunction. Due to the passivation effect of the fullerene derivative layer 32, not only can the deterioration rate of the organic-inorganic hybrid perovskite layer 31 be effectively slowed down, and the stability of the device can be improved; but also the recovery time of the device after the detected gas is removed can be effectively slowed down through mutual charge transfer, so that the device has a computing function on the basis of realizing gas sensing.

[0040] In a preferred implementation of an embodiment of the present invention, when the action time and reaction intensity of the organic-inorganic hybrid perovskite transistor-based sensing and computing device and the gas are different, the organic-inorganic hybrid perovskite transistor-based sensing and computing device exhibits nonlinear relaxation to simulate the olfactory synapse.

[0041] Specifically, after the organic-inorganic hybrid perovskite transistor-type sensing and computing device contacts the detected gas and removes the detected gas, if the action time of the device and the detected gas is different, the device exhibits nonlinear relaxation; if the reaction intensity of the device and the detected gas is different, the device also exhibits nonlinear relaxation, which can be used to simulate the double pulse facilitation, accumulation effect and other characteristics of the olfactory nerve synapses, and then realizes the dual functions of sensing and computing in the sensor, so that when simulating the olfactory synapses, it has better computing function, paving the way for the simulation of bionic olfactory systems in the future, especially laying a solid foundation for the development of bionic olfactory systems in artificial intelligence robots.

[0042] In a preferred implementation of the embodiment of the present invention, the fullerene derivative layer 32 includes: [6,6]-phenyl-C61-butyric acid isomethyl ester; the organic-inorganic hybrid perovskite includes: MAPbI 3 or (PEA) 2 PbI 4 .

[0043] Specifically, the fullerene derivative in the fullerene derivative layer 32 may be [6,6]-phenyl-C61-butyric acid isomethyl ester. [6,6]-phenyl-C61-butyric acid isomethyl ester is PCBM60. Organic-inorganic hybrid perovskites include MAPbI 3 or (PEA) 2 PbI 4 MAPbI 3 It is methylamine iodide perovskite, with the chemical formula CH 3 NH 3 PbI 3 (PEA) 2 PbI 4 It is phenylethylamine lead iodine, with the chemical formula (C 6 H 5 CH 2 CH 2 NH 3 ) 2 PbI 4 .

[0044] In a preferred implementation of the embodiment of the present invention, Figure 1 As shown, the thickness D32 of the fullerene derivative layer 32 is less than 20 nm; the thickness D31 of the organic-inorganic hybrid perovskite layer 31 is 100 nm to 500 nm.

[0045] Specifically, the thickness D32 of the fullerene derivative layer 32 is relatively thin, and the thickness D31 of the organic-inorganic hybrid perovskite layer 31 is relatively thick. For example, the thickness D32 of the fullerene derivative layer 32 is less than 20 nm. Preferably, the thickness D32 of the fullerene derivative layer 32 is 10 nm to 20 nm. The thickness D31 of the organic-inorganic hybrid perovskite layer 31 is 100 nm to 500 nm.

[0046] In a preferred implementation of the embodiment of the present invention, Figure 1 As shown, the source-drain electrode layer 40 is a gold-chromium double-layer metal electrode; the thickness D4 of the source-drain electrode layer 40 is 10 nm to 60 nm.

[0047] Specifically, the thickness D4 of the source-drain electrode layer 40 is 10 nm to 60 nm, and the source-drain electrode layer 40 includes a source electrode 41 and a drain electrode 42. The source electrode 41 may be a gold-chromium double-layer metal electrode (Au / Cr electrode), and the gold-chromium double-layer metal electrode includes a gold layer and a chromium layer, for example, the thickness of the gold layer is 50 nm, and the thickness of the chromium layer is 10 nm.

[0048] In a preferred implementation of the embodiment of the present invention, Figure 1 As shown, the gate layer 10 is a heavily doped polysilicon gate; the gate dielectric layer 20 is a 300 nanometer silicon dioxide layer.

[0049] Specifically, the gate is made of polysilicon (Si) gate, and specifically, a heavily doped polysilicon gate can be used. The gate dielectric layer 20 is made of silicon dioxide (SiO 2 ) layer, specifically, a 300-nanometer silicon dioxide layer may be used, and the particle size of the silicon dioxide on the surface of the 300-nanometer silicon dioxide layer is less than or equal to 300 nm. The thickness D2 of the gate dielectric layer 20 is 10 nm to 40 nm.

[0050] In a preferred implementation of the embodiment of the present invention, Figure 2 As shown, the gate layer 10 is a gold thin film layer, and the gate dielectric layer 20 is an aluminum oxide layer; a flexible material layer 50 is disposed on a side of the gate layer 10 away from the gate dielectric layer 20 .

[0051] Specifically, the device of the present application can also be formed into a flexible device, and the gate can be made of a gold thin film layer. The gate dielectric layer 20 is an aluminum oxide layer (Al 2 O 3 ), the thickness of the aluminum oxide layer can be 30nm. The entire device uses the flexible material layer 50 as a substrate, and a flexible device can be obtained.

[0052] In a preferred implementation of the embodiment of the present invention, the flexible material layer 50 is selected from a polyimide layer or a polyethylene terephthalate layer.

[0053] Specifically, the material used for the flexible material layer 50 may be a polyimide (PI) layer or a polyethylene terephthalate (PET) layer.

[0054] Based on the organic-inorganic hybrid perovskite transistor-based sensing-computing integrated device described in any of the above embodiments, the present invention also provides a preferred embodiment of a method for preparing an organic-inorganic hybrid perovskite transistor-based sensing-computing integrated device:

[0055] like Figure 3 As shown, the method for preparing the organic-inorganic hybrid perovskite transistor-type sensing-computing integrated device according to the embodiment of the present invention comprises the following steps:

[0056] Step S100: providing a gate layer covered with a gate dielectric layer, an organic-inorganic hybrid perovskite precursor solution, and a fullerene derivative solution.

[0057] Step S200: using the organic-inorganic hybrid perovskite precursor solution to prepare an organic-inorganic hybrid perovskite layer on the gate dielectric layer of the gate layer covered with the gate dielectric layer.

[0058] Step S300: using the fullerene derivative solution to prepare a fullerene derivative layer on the organic-inorganic hybrid perovskite layer.

[0059] Step S400: preparing a source-drain electrode layer on the fullerene derivative layer to obtain an organic-inorganic hybrid perovskite transistor-type sensor-computing integrated device.

[0060] Specifically, a gate dielectric layer is formed on the gate layer to obtain a gate layer covered with the gate dielectric layer, and an organic-inorganic hybrid perovskite precursor solution and a fullerene derivative solution are pre-configured. First, an organic-inorganic hybrid perovskite layer is formed on the gate dielectric layer of the gate layer covered with the gate dielectric layer using an organic-inorganic hybrid perovskite precursor solution, and then a fullerene derivative layer is formed on the organic-inorganic hybrid perovskite layer using a fullerene derivative solution, and finally a source-drain electrode layer is formed on the fullerene derivative layer.

[0061] Step S100 specifically includes:

[0062] Step S110, cleaning the gate layer covered with the gate dielectric layer, ultrasonically cleaning with a cleaning solution (such as Decon 90), ethanol and deionized water in sequence, then drying the cleaned gate layer covered with the gate dielectric layer with nitrogen, and finally treating with an ultraviolet ozone cleaner to remove residual organic solvents on the surface.

[0063] Specifically, the time for ultrasonic cleaning with deionized water is 10 minutes to 30 minutes, and the time for treatment with an ultraviolet ozone cleaning machine is 5 minutes to 25 minutes.

[0064] Step S100 specifically includes:

[0065] Step S120, mixing the organic-inorganic hybrid perovskite precursor and the solvent, heating and stirring, to obtain an organic-inorganic hybrid perovskite precursor solution. The organic-inorganic hybrid perovskite precursor includes: methyl ammonium iodide and lead iodide, or the organic-inorganic hybrid perovskite precursor includes: phenethyl ammonium iodide and lead iodide; the solvent includes: N,N-dimethylformamide and dimethyl sulfoxide.

[0066] MAPbI 3 For example, the organic-inorganic hybrid perovskite precursor solution includes: methyl ammonium iodide (MAI, i.e. CH 3 NH 3 I), lead iodide (PbI 2 ), N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), the volume ratio of DMF and DMSO is 5-20:1, MAI and PbI 2 The molar ratio is 1:1. 2 PbI 4 For example, the organic-inorganic hybrid perovskite precursor solution includes: phenethylamine iodide (PEAI, i.e. C 6 H 5 CH 2 CH 2 NH 3 I), lead iodide (PbI 2 ), N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), the volume ratio of DMF and DMSO is 5-20:1, PEAI and PbI 2 The molar ratio is 1:1.

[0067] The fullerene derivative solution comprises a fullerene derivative and a solvent, wherein the solvent comprises methyl butyrate and chlorobenzene. The concentration of the fullerene derivative in the fullerene derivative solution is 2 mg / ml to 10 mg / ml.

[0068] The organic-inorganic hybrid perovskite layer is prepared by a one-step spin coating method assisted by an anti-solvent, and step S200 specifically includes:

[0069] Step S210 , spin-coating an organic-inorganic hybrid perovskite precursor solution on the gate dielectric layer of the gate layer covered with the gate dielectric layer.

[0070] Step S220, rapidly dropwise adding ether anti-solvent, and heating and annealing to obtain an organic-inorganic hybrid perovskite layer; wherein the heating and annealing temperature is 100°C to 140°C.

[0071] Specifically, the amount of the ether anti-solvent added can be determined as needed. Usually, the ether anti-solvent covers the entire gate dielectric layer. For example, the ether anti-solvent can be 500 μL.

[0072] The fullerene derivative layer is prepared by spin coating, and step S300 specifically includes:

[0073] Step S310, spin-coating the fullerene derivative solution on the organic-inorganic hybrid perovskite layer, and annealing to obtain a fullerene derivative layer; wherein the annealing temperature is 80° C. to 120° C., and the annealing time is 20 minutes to 40 minutes.

[0074] Specifically, a fullerene derivative solution is spin-coated on the organic-inorganic hybrid perovskite layer, and then annealed to obtain a fullerene derivative layer. The source-drain electrode layer is prepared by thermal evaporation. Specific embodiments

[0076] SiO 2 / Si wafer as the gate layer covered with a gate dielectric layer, cleaning SiO 2 / Si wafers were ultrasonically cleaned with Decon 90, ethanol and deionized water for 20 minutes in sequence, and then the cleaned SiO 2 / Si wafer was blown dry and finally treated with UV ozone cleaning machine for 15 minutes to remove residual organic solvent on the surface. 2 The mixture was dissolved in a mixed solution of DMF and DMSO (the volume ratio of DMF and DMSO was 10:1) in a predetermined proportion, and the solution was stirred on a magnetic stirring heating table for 2 hours to obtain a light yellow organic-inorganic hybrid perovskite precursor solution; a PCBM solution was prepared, the solvent was a mixed solution of methyl butyrate and chlorobenzene, and the solution concentrations were 10 mg / ml.

[0077] SiO 2 / Si wafer as substrate, directly on SiO 2 The organic-inorganic hybrid perovskite layer was prepared by the "anti-solvent-assisted one-step spin coating method" above; after spin coating the organic-inorganic hybrid perovskite precursor solution, 500 μL of ether anti-solvent was quickly added. The wafer was then placed on a 120°C heating table for annealing.

[0078] The PCBM solution is then spin-coated on the organic-inorganic hybrid perovskite layer, and then annealed at 100°C for 30 minutes to obtain the PCBM layer. Finally, Au (50nm) / Cr (10nm) source and drain electrodes are prepared on the PCBM layer by thermal evaporation to obtain an organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device.

[0079] The thickness of the organic-inorganic hybrid perovskite layer of the organic-inorganic hybrid perovskite transistor-type sensing and computing integrated device is 305nm, and the thickness of the PCBM layer is 19nm.

[0080] Based on the organic-inorganic hybrid perovskite transistor-based sensing and computing device, as the air intake time increases, the pulse width also increases (such as Figure 4 As shown), the PPF index decreases accordingly (as shown Figure 5 When the inlet time (120s) and outlet time (80s) are fixed, nonlinear relaxation is shown. PPF index refers to the paired pulse promotion index, PPF index = R 2 / R 1 , R 1 and R 2 Respectively represent two adjacent pulse peaks.

[0081] Specifically, first, after gas pulse stimulation, due to nonlinear relaxation decay, the current will not quickly return to the initial state. After the next pulse stimulation, the post-stimulation current will further increase (e.g. Figure 5 As shown in Figure 2, the double pulse facilitation characteristic is shown. If the gas pulse is continued to be applied, the current will continue to increase until saturation (as shown in Figure 2). Figure 6 ), which shows certain time information: after stimulation, the current will gradually increase with time until saturation.

[0082] Secondly, when the device is far away from the gas, the concentration will gradually decrease due to diffusion, resulting in a decrease in the stimulated current after the gas acts. Similarly, when the device is close to the gas, the concentration will be relatively large, making the stimulated current larger. This shows certain spatial information: after the gas acts, the stimulating current is related to the distance.

[0083] Therefore, the device can calculate and infer the gas diffusion direction and diffusion distance through these spatiotemporal information (including time information and space information).

[0084] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A sensor-computing integrated device based on an organic-inorganic hybrid perovskite transistor, characterized in that: include: A gate layer, a gate dielectric layer, a heterojunction channel layer and a source-drain electrode layer are sequentially arranged; the heterojunction channel layer comprises: An organic-inorganic hybrid perovskite layer and a fullerene derivative layer connected to each other; wherein the organic-inorganic hybrid perovskite layer is connected to the gate dielectric layer, and the fullerene derivative layer is connected to the source-drain electrode layer; the fullerene derivative layer comprises: [6,6]-phenyl-C61-butyric acid isomethyl ester; the organic-inorganic hybrid perovskite comprises: MAPbI3 or (PEA)2PbI4; The fullerene derivative layer is used to passivate the organic-inorganic hybrid perovskite layer.

2. The organic-inorganic hybrid perovskite transistor-based sensing and computing device according to claim 1, characterized in that: When the action time and reaction intensity of the organic-inorganic hybrid perovskite transistor-based sensing and computing device and the gas are different, the organic-inorganic hybrid perovskite transistor-based sensing and computing device exhibits nonlinear relaxation to simulate the olfactory synapse.

3. The organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to claim 1, characterized in that: The thickness of the fullerene derivative layer is less than 20 nm; The thickness of the organic-inorganic hybrid perovskite layer is 100nm to 500nm.

4. The organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to claim 1, characterized in that: The source-drain electrode layer is a gold-chromium double-layer metal electrode; the thickness of the source-drain electrode layer is 10nm-60nm.

5. The organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to claim 4, characterized in that: The gate layer is a heavily doped polysilicon gate; the gate dielectric layer is a 300 nanometer silicon dioxide layer on the surface.

6. The organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to claim 4, characterized in that: The gate layer is a gold thin film layer, and the gate dielectric layer is an aluminum oxide layer; a flexible material layer is arranged on the side of the gate layer away from the gate dielectric layer.

7. The organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to claim 6, characterized in that: The flexible material layer is selected from a polyimide layer or a polyethylene terephthalate layer.

8. A method for preparing an organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to any one of claims 1 to 7, characterized in that: Includes steps: Providing a gate layer covered with a gate dielectric layer, an organic-inorganic hybrid perovskite precursor solution, and a fullerene derivative solution; Using the organic-inorganic hybrid perovskite precursor solution, preparing an organic-inorganic hybrid perovskite layer on the gate dielectric layer of the gate layer covered with the gate dielectric layer; Using the fullerene derivative solution, preparing a fullerene derivative layer on the organic-inorganic hybrid perovskite layer; A source-drain electrode layer is prepared on the fullerene derivative layer to obtain an organic-inorganic hybrid perovskite transistor-type sensor-computing integrated device.

9. The method for preparing an organic-inorganic hybrid perovskite transistor-based sensing and computing integrated device according to claim 8, characterized in that: The organic-inorganic hybrid perovskite layer is prepared by a one-step spin coating method assisted by an anti-solvent; The fullerene derivative layer is prepared by spin coating; The source-drain electrode layer is prepared by thermal evaporation.

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