A structure that provides a test environment for testing the resolution of μK-level temperature sensors

Abstract

This application discloses a structure providing a test environment for μK-level temperature sensor resolution testing, comprising a thermal insulation fixing layer, an inner metal layer, a thermal insulation filling layer, and an intermediate metal layer. The thicknesses of the thermal insulation filling layer, the intermediate metal layer, and the inner metal layer are determined by calculation using the frequency domain Fourier thermal conductivity law for solids. The thermal insulation filling layer is used to isolate ambient temperature fluctuations. The intermediate metal layer utilizes the high thermal conductivity of the metal material to homogenize ambient temperature fluctuations before they are conducted to the inner metal layer. A groove is formed inside the inner metal layer, and the temperature probe and wires of the μK-level temperature sensor under test are installed in the groove. The gap between the temperature probe and wires and the inner metal layer is filled with thermal conductive paste to provide a stable and uniform sub-μK-level temperature fluctuation environment for the μK-level temperature sensor. This application can provide a sub-μK-level temperature fluctuation environment for μK-level temperature sensor resolution testing, facilitating accurate testing of μK-level temperature sensor resolution.

Description

Technical Field

[0001] This application belongs to the field of precision measurement, and more specifically, relates to a structure that provides a test environment for testing the resolution of μK-level temperature sensors. Background Technology

[0002] Temperature fluctuations are a significant factor affecting high-precision measurements such as the Tianqin gravitational wave detection. To reduce the impact of temperature fluctuations on Tianqin's measurement noise, Tianqin proposes that the temperature fluctuation in its core payload region should not exceed 5 μK Hz. -1 / 2 (@6mHz). To monitor the actual temperature fluctuations in this region, it is necessary to develop a device with extremely high resolution (the resolution requirement is at least 3μKHz). -1 / 2 A temperature sensor with a temperature fluctuation of (@6mHz) is being developed. Accurately testing the actual resolution of a temperature sensor that theoretically meets μK-level resolution requirements is one of the current research focuses.

[0003] Current methods for testing temperature sensor resolution involve placing the sensor in a temperature fluctuation environment below its noise floor. In this state, the sensor is considered unable to detect ambient temperature fluctuations, and its output is thus assumed to be its actual resolution. However, the temperature stability of commercially available temperature control devices for temperature sensor resolution testing is typically in the mK range. This makes it difficult for current resolution testing equipment to provide the necessary testing environment for μK-level temperature sensor resolution testing, thus preventing them from accurately measuring the actual resolution and other performance characteristics of μK-level temperature sensors. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the purpose of this application is to provide a structure that provides a testing environment for μK-level temperature sensor resolution testing. This aims to solve the problem that traditional temperature sensor resolution testing devices are unable to provide the necessary testing environment for μK-level temperature sensor testing, thus preventing them from accurately testing the actual resolution of μK-level temperature sensors.

[0005] To achieve the above objectives, in a first aspect, this application provides a structure for providing a test environment for μK-level temperature sensor resolution testing, including a heat-insulating fixing layer and an inner metal layer, with a plurality of heat-insulating filling layers and an intermediate metal layer nested and superimposed between the heat-insulating fixing layer and the inner metal layer;

[0006] The thermal insulation filling layer is used to isolate ambient temperature fluctuations by utilizing the thermal insulation properties of low thermal conductivity materials. The intermediate metal layer is used to homogenize ambient temperature fluctuations before they are conducted to the inner metal layer by utilizing the high thermal conductivity of metal materials. The inner metal layer has a groove inside, and the temperature probe and wires of the μK-level temperature sensor to be tested are installed in the groove. The gap between the temperature probe and wires and the inner metal layer is filled with thermal conductive paste. The inner metal layer is used to provide a stable and uniform sub-μK-level temperature fluctuation environment for the μK-level temperature sensor by utilizing the high thermal conductivity of metal materials. The thickness of the thermal insulation filling layer, the intermediate metal layer and the inner metal layer is determined by calculation using the frequency domain Fourier thermal conductivity law for solids.

[0007] The structure provided in this application, which provides a test environment for testing the resolution of μK-level temperature sensors, utilizes the thermal insulation properties of low thermal conductivity materials and the high thermal conductivity properties of metallic materials. By using the frequency domain Fourier thermal conductivity law for solids, the thickness of the thermal insulation filling layer that meets the thermal insulation requirements, as well as the thickness of the intermediate metal layer and the inner metal layer that meet the temperature uniformity requirements, can be calculated. This can provide a stable and uniform sub-μK-level temperature fluctuation environment for μK-level temperature sensors, facilitating accurate testing of the resolution of μK-level temperature sensors.

[0008] As a further preferred embodiment, the wire extends out after being wound inside the structure. The winding method is as follows: the winding plane of the wire is on the horizontal plane, located at the middle height of the vertical height of the entire structure, and the wire is wound around the outer wall of the inner metal layer and the outer wall of the middle metal layer at least once. The remaining length of the wire is wound in the heat insulation filling layer.

[0009] As a further preferred embodiment, the length of the wire wound within the structure is determined by environmental heat leakage analysis and air convection analysis.

[0010] As a further preferred embodiment, the ambient heat leakage is the heat energy leaked from the ambient temperature to the inner metal layer through the wire, and the air convection is the air convection within the gap between the wire and the structure.

[0011] As a further preferred embodiment, the heat insulation filling layer is made of a heat insulation paste material with curing ability.

[0012] As a further preferred embodiment, both the intermediate metal layer and the inner metal layer are made of copper.

[0013] As a further preferred embodiment, the thicknesses of the thermal insulation filling layer, the intermediate metal layer, and the inner metal layer are calculated as follows: based on the frequency domain Fourier thermal conductivity law, a heat transfer equation including the material properties and dimensions of each layer is solved; then, based on this equation, a transfer function between the ambient temperature and the temperature of the inner metal layer is obtained; while ensuring that the amplitude of the transfer function is lower than a set value, the thickness of the thermal insulation filling layer that meets the thermal insulation requirements, as well as the thicknesses of the intermediate metal layer and the inner metal layer that meet the temperature uniformity requirements, are calculated.

[0014] Secondly, this application provides a resolution testing apparatus based on the structure described above for providing a test environment for μK-level temperature sensor resolution testing, comprising:

[0015] The first data acquisition unit is used to acquire voltage data output by the electronic circuit in the μK-level temperature sensor;

[0016] The first processor is used to convert the voltage data acquired by the first data acquisition unit into temperature data, and to calculate the noise power spectrum of the μK-level temperature sensor by performing a Fourier transform on the temperature data, thereby outputting the actual resolution of the μK-level temperature sensor.

[0017] Thirdly, this application provides a temperature sensor performance evaluation device based on the structure described above for providing a test environment for μK-level temperature sensor resolution testing, comprising:

[0018] Commercial temperature sensors are installed on the outer surface of the thermal insulation layer to measure ambient temperature;

[0019] The second data acquisition unit is used to acquire voltage data output by the electronic circuit in the μK-level temperature sensor;

[0020] The second processor is used to receive and convert the voltage data acquired by the second data acquisition unit into temperature data, and then compare the temperature data with the ambient temperature data measured by the commercial temperature sensor, and determine the actual performance of the μK-level temperature sensor based on the comparison result.

[0021] Fourthly, this application provides a method for evaluating the performance of a temperature sensor using the aforementioned temperature sensor performance evaluation device, comprising the following steps:

[0022] The temperature probe and wires of the μK-level temperature sensor to be tested are installed in the groove of the inner metal layer, and the gap between the temperature probe and wires and the inner metal layer is filled with thermal paste.

[0023] Each layer of the structure is sealed sequentially, and a certain length of wire is arranged in a certain winding method. After sealing, a commercial temperature sensor is installed on the outer surface of the heat insulation fixing layer. The certain length is determined by environmental heat leakage analysis and air convection analysis. The certain winding method is as follows: the winding plane of the wire is in the horizontal plane, located at the middle height of the vertical height of the entire structure, and the wire is wound around the outer wall of the inner metal layer and the outer wall of the middle metal layer at least once. The remaining length of the wire is wound in the heat insulation filling layer.

[0024] The second processor converts the voltage data output by the μK-level temperature sensor acquired by the second data acquisition unit into temperature data, then compares the temperature data with the ambient temperature data measured by a commercial temperature sensor, and determines the actual performance of the μK-level temperature sensor based on the comparison results.

[0025] It is understood that the beneficial effects of the second, third and fourth aspects mentioned above can be found in the relevant descriptions in the first aspect above, and will not be repeated here. Attached Figure Description

[0026] Figure 1 This is an exploded view of the structure providing a test environment for testing the resolution of μK-level temperature sensors, as provided in the embodiments of this application.

[0027] Figure 2 This is a three-dimensional cross-sectional view of the structure that provides a test environment for testing the resolution of μK-level temperature sensors, as provided in the embodiments of this application.

[0028] Figure 3 This is a schematic diagram of the winding method of the wire provided in the embodiment of this application.

[0029] In all the accompanying drawings, the same reference numerals are used to denote the same elements or structures, wherein: 10 is the thermal insulation fixing layer, 20 is the thermal insulation filling layer, 30 is the intermediate metal layer, 40 is the inner metal layer, 50 is the thermal conductive paste, 61 is the temperature probe in the μK-level temperature sensor, 62 is the wire in the μK-level temperature sensor, and 62 is the electronic circuit in the μK-level temperature sensor. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0031] It should be understood that, in the description of this application, the term "several" means at least one, such as one, two, etc., unless otherwise expressly and specifically defined; the term "multiple" means two or more, unless otherwise expressly and specifically defined; the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order of objects; the term "and / or" includes any and all combinations of one or more of the related listed items.

[0032] Furthermore, throughout this specification, references to "an embodiment"; "an embodiment," "an example," or similar language indicate that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of this application. Therefore, the appearance of the phrase "in one embodiment;" throughout this specification, and similar language, may, but not necessarily, refer to the same embodiment.

[0033] It should be noted that temperature sensors that theoretically meet the μK-level resolution requirement (i.e., μK-level temperature sensors) have a similar structure to traditional temperature sensors, mainly consisting of a temperature probe, electronic circuitry, and wires connecting the temperature probe and the electronic circuitry. The temperature probe is used to measure temperature data; the electronic circuitry can be a conversion circuit used to convert the temperature data into voltage data.

[0034] This application considers that the expected resolution of the temperature sensor needs to reach the μK level. By placing the temperature sensor in a sub-μK temperature environment, the sensor cannot detect ambient temperature fluctuations, and the obtained results can accurately reflect its actual resolution. Based on this, to test the actual resolution of a μK-level temperature sensor, this application provides a structure for providing a test environment for μK-level temperature sensor resolution testing, which can provide a sub-μK temperature fluctuation environment for μK-level temperature sensor resolution testing.

[0035] like Figure 1 and 2 As shown, the structure of the test environment provided for the μK-level temperature sensor resolution test in this application includes a heat-insulating fixing layer 10 and an inner metal layer 40. Several heat-insulating filling layers 20 and intermediate metal layers 30 are provided between the heat-insulating fixing layer 10 and the inner metal layer 40. The heat-insulating filling layers 20 and intermediate metal layers 30 can be nested and superimposed on each other between the heat-insulating fixing layer 10 and the inner metal layer 40.

[0036] The thermal insulation filler layer 20 can be made of a low thermal conductivity material, mainly serving as a thermal insulation layer to prevent fluctuations in ambient temperature. Preferably, a low thermal conductivity insulating paste with curing ability can be used.

[0037] The intermediate metal layer 30 can be made of a metal material with high thermal conductivity, such as copper, to homogenize the uneven ambient temperature before it reaches the inner metal layer 40. The ambient temperature cannot be the same everywhere due to various reasons such as people walking and weather. The intermediate metal layer 30 uses the high thermal conductivity of metal to homogenize the ambient temperature fluctuations before they are conducted to the inner metal layer 40.

[0038] The inner metal layer 40 can be made of a highly thermally conductive metal material, such as copper. A groove is formed inside the inner metal layer 40, and the temperature probe 61 and wire 62 of the μK-level temperature sensor to be tested are installed in the groove. Thermal paste 50 is used to fill the gap between the temperature probe 61 and wire 62 and the inner metal layer 40. The wire 62 extends out after being wound inside the structure and connects to the electronic circuit 63 located outside the structure. The inner metal layer 40 provided in this embodiment utilizes the high thermal conductivity of metal to provide a stable and uniform sub-μK-level temperature fluctuation environment for the μK-level temperature sensor.

[0039] Specifically, the thermal paste 50 provided in this embodiment can be a paste material with curing ability and high thermal conductivity. After the temperature probe and wires in the μK-level temperature sensor are installed in the inner metal layer 40, the thermal paste 50 is used to fill the gap between the temperature probe 61 and the wires 62 and the groove of the inner metal layer 40. This can eliminate the influence of air convection in the internal gap and assist the self-heating effect of the μK-level temperature sensor to dissipate heat, so that the temperature of the μK-level temperature sensor is closer to that of the inner metal layer 40.

[0040] The heat insulation fixing layer 10 serves as a support and fixation structure for the entire device. Since the material of the heat insulation filling layer 20 is initially liquid, it needs to be loaded into a solid container to ensure the curing process of the heat insulation paste.

[0041] Specifically, the shapes of the heat insulation fixing layer 10, heat insulation filling layer 20, intermediate metal layer 30, and inner metal layer 40 provided in this embodiment can be spherical or cubic, etc., and this embodiment is not limited thereto. In addition, the dimensions of the heat insulation fixing layer 10, heat insulation filling layer 20, intermediate metal layer 30, and inner metal layer 40 provided in this embodiment can be set according to the actual situation, and this embodiment is not limited thereto.

[0042] It is understood that the thermal insulation effect of the thermal insulation filling layer 20 provided in this embodiment, as well as the temperature uniformity effect of the intermediate metal layer 30 and the inner metal layer 40, are determined by the selected materials, dimensions, and thicknesses. By solving the heat transfer equation containing the material properties and dimensions of each layer based on the frequency domain Fourier thermal conductivity law for solids, and then obtaining the transfer function between the ambient temperature and the temperature of the inner metal layer based on this equation, while ensuring that the amplitude of the transfer function is lower than a set value, and after determining the materials of each layer, the thicknesses of the low thermal conductivity thermal insulation filling layer 20 and the high thermal conductivity intermediate metal layer 30 and inner metal layer 40 can be obtained, thereby effectively ensuring that the inner metal layer 40 can provide a stable and uniform sub-μK temperature fluctuation environment for the μK-level temperature sensor.

[0043] The structure provided in this application, which provides a test environment for testing the resolution of μK-level temperature sensors, utilizes the thermal insulation properties of low thermal conductivity materials and the high thermal conductivity properties of metallic materials. By using the frequency domain Fourier thermal conductivity law for solids, the thickness of the thermal insulation filling layer that meets the thermal insulation requirements, as well as the thickness of the intermediate metal layer and the inner metal layer that meet the temperature uniformity requirements, can be calculated. This can provide a stable and uniform sub-μK-level temperature fluctuation environment for μK-level temperature sensors, facilitating accurate testing of the resolution of μK-level temperature sensors.

[0044] In one embodiment, such as Figure 3 As shown, the wire 62 in the μK-level temperature sensor extends out after being wound inside the structure. The winding method can be as follows: the winding plane of the wire 62 is on the horizontal plane, located at the middle height of the vertical height of the entire structure, and the wire 62 is wound around the outer wall of the inner metal layer 40 and the outer wall of the middle metal layer 30 at least once. The remaining length of the wire is wound in the heat insulation filling layer 20.

[0045] In one embodiment, the length of the wire 62 wound within the structure in the μK-level temperature sensor needs to meet the requirements of environmental heat leakage analysis and air convection analysis. The environmental heat leakage analysis requires that the ambient temperature, through the wire 62, transfers heat to the inner metal layer 40, affecting the μK-level temperature sensor test. Calculations determine the wire length at which heat leakage from the wire 62 does not affect the μK-level temperature sensor test. The air convection analysis requires that the gap between the wire 62 and the structure exists, and that air convection within this gap may affect the μK-level temperature sensor test. Calculations determine that air convection does not affect the wire length at which the μK-level temperature sensor test is performed.

[0046] This application also provides a resolution testing device, which includes the structure described above that provides a testing environment for μK-level temperature sensor resolution testing, a first data acquisition unit, and a first processor.

[0047] The structure providing the test environment for μK-level temperature sensor resolution testing is designed to provide a stable and uniform sub-μK-level temperature fluctuation environment for the μK-level temperature sensor. The first data acquisition unit is used to collect the voltage data output by the μK-level temperature sensor. The first processor is used to convert the voltage data collected by the first data acquisition unit into temperature measurement data, and calculate the noise power spectrum of the μK-level temperature sensor through Fourier transform, thereby providing the actual resolution.

[0048] This application also provides a temperature sensor performance evaluation device, including the structure described above that provides a test environment for μK-level temperature sensor resolution testing, a commercial temperature sensor, a second data acquisition unit, and a second processor.

[0049] The structure providing the test environment for μK-level temperature sensor resolution testing is designed to provide a stable and uniform sub-μK-level temperature fluctuation environment for the μK-level temperature sensor. A commercial temperature sensor is mounted on the outer surface of the thermal insulation layer 10 to measure the ambient temperature. A second data acquisition unit is used to acquire voltage data output from the electronic circuitry of the μK-level temperature sensor. A second processor converts the voltage data acquired by the second data acquisition unit into temperature data, then compares this temperature data with the ambient temperature data measured by the commercial temperature sensor, and determines the actual performance of the μK-level temperature sensor based on the comparison result.

[0050] In addition, this application also provides a method for evaluating the performance of the temperature sensor of the above-mentioned temperature sensor performance evaluation device, including the following steps: (1) Install the temperature probe and wire in the μK-level temperature sensor to be tested in the groove of the inner metal layer, and fill the gap between the temperature probe and wire and the inner metal layer with thermal conductive paste; (2) Seal each layer structure in sequence, and arrange the wire of a certain length according to a certain winding rule. After sealing in sequence, install the commercial temperature sensor on the outer surface of the heat insulation fixing layer; (3) Relying on the heat insulation performance of the device, the inner metal layer will provide a stable temperature fluctuation environment at the sub-μK level. At this time, the result measured by the μK-level temperature sensor in the inner metal layer is its actual resolution. The second data acquisition unit sends the ambient temperature data obtained by the commercial temperature sensor and the voltage data output by the μK-level temperature sensor to the second processor. The second processor converts the voltage data collected by the second data acquisition unit into temperature data, and then compares the temperature data with the ambient temperature data measured by the commercial temperature sensor. Based on the comparison result, the actual performance of the μK-level temperature sensor is judged.

[0051] In step (2), a certain length is determined by environmental heat leakage analysis and air convection analysis. The certain winding method is as follows: the winding plane of the wire is in the horizontal plane, located at the middle height of the vertical height of the entire structure, and the wire is wound around the outer wall of the inner metal layer and the outer wall of the middle metal layer at least once, and the remaining length of the wire is wound in the heat insulation filling layer;

[0052] The resolution testing device, temperature sensor performance evaluation device, and temperature sensor performance evaluation method provided in this application utilize the thermal insulation properties of low thermal conductivity materials and the high thermal conductivity properties of metallic materials. By applying the frequency domain Fourier thermal conductivity law for solids, the thickness of the thermal insulation filling layer that meets the thermal insulation requirements, as well as the thickness of the intermediate metal layer and inner metal layer that meet the temperature uniformity requirements, are calculated. This provides a uniform and stable installation and testing platform for μK-level temperature sensors while simultaneously mitigating the influence of ambient temperature. When a μK-level temperature sensor is placed in a sub-μK-level temperature fluctuation environment, the measured result of the temperature sensor can be considered as its actual resolution. At the same time, the ambient temperature fluctuation is recorded for comparison, ultimately accurately determining the actual performance of the measured temperature sensor.

[0053] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. One type is μK The structure of the test environment provided for the resolution testing of the grade temperature sensor is characterized by: It includes a heat-insulating fixing layer and an inner metal layer, with several heat-insulating filling layers and intermediate metal layers nested and superimposed between the heat-insulating fixing layer and the inner metal layer; The thermal insulation filler layer utilizes the thermal insulation properties of low thermal conductivity materials to isolate ambient temperature fluctuations; the intermediate metal layer utilizes the high thermal conductivity of metal materials to homogenize ambient temperature fluctuations before they are conducted to the inner metal layer; the inner metal layer has grooves inside, to be tested. μK The temperature sensor's probe and wires are installed in a slot, and the gap between the probe and wires and the inner metal layer is filled with thermal conductive paste. The inner metal layer utilizes the high thermal conductivity of the metal material to... μK The high-performance temperature sensor provides stable and uniform sub-temperature performance. μK Level temperature fluctuation environment; the thickness of the heat insulation filling layer, the intermediate metal layer and the inner metal layer are determined by calculation using the frequency domain Fourier thermal conductivity law for solids; The length of the wire wound within the structure was determined by environmental heat leakage analysis and air convection analysis. The thicknesses of the thermal insulation filling layer, the intermediate metal layer, and the inner metal layer are calculated as follows: the heat transfer equation, which includes the material properties and dimensions of each layer, is solved based on the frequency domain Fourier thermal conductivity law; then, the transfer function between the ambient temperature and the temperature of the inner metal layer is obtained based on the heat transfer equation; and, while ensuring that the amplitude of the transfer function is lower than a set value, the thickness of the thermal insulation filling layer that meets the thermal insulation requirements, as well as the thicknesses of the intermediate metal layer and the inner metal layer that meet the temperature uniformity requirements, are calculated.

2. As described in claim 1 μK The structure of the test environment provided for the resolution testing of the grade temperature sensor is characterized by: The conductor extends out after being wound inside the structure. The winding method is as follows: the winding plane of the conductor is on the horizontal plane, located at the middle height of the vertical height of the entire structure, and the conductor is wound around the outer wall of the inner metal layer and the outer wall of the middle metal layer at least once. The remaining length of the conductor is wound in the heat insulation filling layer.

3. As described in claim 1 μK The structure of the test environment provided for the resolution testing of the grade temperature sensor is characterized by: The ambient heat leakage refers to the heat energy leaked from the ambient temperature to the inner metal layer through the wire, and the air convection refers to the air convection within the gap between the wire and the structure.

4. As described in claim 1 μK The structure of the test environment provided for the resolution testing of the grade temperature sensor is characterized by: The heat insulation filling layer is made of heat insulation paste material with curing ability.

5. As described in claim 1 μK The structure of the test environment provided for the resolution testing of the grade temperature sensor is characterized by: Both the intermediate metal layer and the inner metal layer are made of copper.

6. A method based on any one of claims 1 to 5 for... μK A resolution testing device for a temperature sensor provides a structural resolution testing environment, characterized in that... include: The first data acquisition unit is used for data collection. μK Voltage data output by the electronic circuitry in the temperature sensor. The first processor is configured to convert the voltage data acquired by the first data acquisition device into temperature data, and to calculate the temperature data by performing a Fourier transform. μK The noise power spectrum of the temperature sensor is used to output the noise power spectrum. μK The actual resolution of the temperature sensor.

7. A method based on any one of claims 1 to 5 for... μK A temperature sensor performance evaluation device that provides a test environment for high-resolution temperature sensor testing is characterized by its ability to evaluate sensor performance. include: Commercial temperature sensors are installed on the outer surface of the thermal insulation layer to measure ambient temperature; The second data acquisition unit is used for data acquisition. μK Voltage data output by the electronic circuitry in the temperature sensor. The second processor receives and converts the voltage data acquired by the second data acquisition unit into temperature data, then compares this temperature data with the ambient temperature data measured by the commercial temperature sensor, and determines the appropriate temperature based on the comparison result. μK The actual performance of the temperature sensor.

8. A method for evaluating the performance of a temperature sensor using the temperature sensor performance evaluation device as described in claim 7, characterized in that, Includes the following steps: To be tested The temperature sensor probe and wires in the primary temperature sensor are installed in the groove of the inner metal layer, and the gap between the temperature sensor probe and wires and the inner metal layer is filled with thermal grease. Each layer of the structure is sealed sequentially, and a certain length of wire is arranged in a certain winding method. After sealing, a commercial temperature sensor is installed on the outer surface of the heat insulation fixing layer. The certain length is determined by environmental heat leakage analysis and air convection analysis. The certain winding method is as follows: the winding plane of the wire is in the horizontal plane, located at the middle height of the vertical height of the entire structure, and the wire is wound around the outer wall of the inner metal layer and the outer wall of the middle metal layer at least once. The remaining length of the wire is wound in the heat insulation filling layer. The second processor is used to process the data collected by the second data acquisition unit. μK The voltage data output by the high-level temperature sensor is converted into temperature data, which is then compared with the ambient temperature data measured by a commercial temperature sensor. The result of this comparison is used to determine... μK The actual performance of the temperature sensor.

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