Equivalent calculation model library and construction method for failure rate of key components of controllable commutation converter

Abstract

A controllable phase-commutated converter key component failure rate equivalent calculation model library and construction method, determine the type of controllable phase-commutated converter key components, and subdivide the key components according to device models; determine the basic failure rate model of key components of each type and different models; determine the failure rate model of key components of each type and model taking stress into account, and on the basis of establishing the basic failure rate model of converter key components, determine the stress parameters that affect the failure rate of each type of components, and then adjust the component failure rate. The present invention solves the problem of calculating component failure rate under variable stress conditions, and is more in line with the actual operating conditions and needs on site.

Description

Technical Field

[0001] The present invention belongs to the technical field of power transmission and transformation, and relates to state monitoring of a direct current transmission converter, and in particular to a failure rate equivalent calculation model library of key components of a controllable commutation converter and a construction method thereof. Background Art

[0002] The controllable commutation converter is developed on the basis of the traditional thyristor converter. It is a new type of converter with controllable commutation capability, which can effectively solve the commutation failure problem of the receiving-end converter and avoid the occurrence and expansion of multi-feed receiving-end power grid failure.

[0003] Compared with traditional converters, the structure of controllable commutation converters is more complex, with an additional transfer branch containing controllable and uncontrollable valves, and controllable valves are also added to the main flow branch. Compared with traditional converters, the number of components of controllable commutation converters has increased significantly, and the operation mode has also changed greatly. Stress factors also have a great impact on the operation safety of converter components. Accurate calculation of the fault model and failure rate of key components is of great significance to the safe operation of controllable commutation converters.

[0004] CN201810840499.5 discloses a submodule state monitoring method for a modular multi-level converter, the method comprising: respectively monitoring the change of the capacitance value of each submodule in real time, thereby monitoring the fault state of each submodule according to the change of the capacitance value of the submodule. The method for monitoring the change of the capacitance value of the submodule is: in each sampling period, judging the charging and discharging state of the capacitor; in the charging process of the capacitor, detecting the bridge arm current in each sampling period, thereby accumulating the charging amount of the capacitor according to the sampling period and the bridge arm current in each sampling period, and then calculating the capacitance value of the capacitor according to the charging amount, the initial voltage, and the termination voltage; judging its change according to the capacitance value of the capacitor calculated multiple times.

[0005] CN201810333875.1 discloses a key equipment failure risk assessment method for improving the reliability of converter valves. The method aims to improve the reliability of high-voltage direct current transmission converter valves. In the method, the key equipment of the converter valve is evaluated from two aspects: system operating characteristics and operating environment parameters. The operating electrical parameters of the equipment are obtained through electromagnetic transient analysis of the system, and the equipment operating environment corresponding to the specific operating parameters is obtained through finite element simulation analysis.

[0006] The above-mentioned existing technical solutions all fail to consider the influence of operating environment and stress when calculating component failure rate, resulting in a lack of accuracy in calculating the failure rate of key components. The component failure rate calculation model library cannot provide strong support for the safety assessment of controllable commutation converters. Summary of the invention

[0007] In order to solve the technical problems that the prior art lacks a fault calculation model library for key components of a controllable commutation converter and the calculation of component failure rate does not consider stress factors, the present invention discloses an equivalent calculation model library for the failure rate of key components of a controllable commutation converter and a construction method.

[0008] In order to achieve the above-mentioned object of the invention, the present invention specifically adopts the following technical solutions.

[0009] A method for constructing an equivalent calculation model library for failure rate of key components of a controllable phase-commutated converter, characterized in that the construction method comprises the following contents:

[0010] (1) Determine the types of key components of controllable commutation converters and subdivide the key components according to device models; key component types include thyristors, IGBTs, diodes, resistors, capacitors, and printed circuit boards;

[0011] (2) Determine the basic failure rate model of key components of various types and models; the basic failure rate model is represented by a fixed failure rate λ, which refers to the probability of a product that has not failed at a certain time and will fail per unit time after this time. The unit is "times / hour". The fixed failure rate parameter provided by the component manufacturer is used as the basic failure rate;

[0012] (3) Determine the failure rate model of key components of each type and model taking into account stress,

[0013] On the basis of establishing the basic model of the failure rate of key components of the converter, the stress parameters that affect the failure rate of various components are determined; among them, the stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and impact;

[0014] The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient:

[0015] ,

[0016] in, Indicates the working failure rate;

[0017] represents the basic failure rate;

[0018] , , is the failure rate adjustment factor;

[0019] Indicates the temperature adjustment coefficient. For thyristors, diodes, and IGBTs, the temperature coefficient By ambient temperature coefficient and junction temperature coefficient Multiply them together to get;

[0020] Indicates the voltage regulation factor;

[0021] Indicates the mechanical vibration adjustment coefficient. For thyristors, diodes, IGBTs and resistors, the mechanical vibration coefficient , no adjustment is made; for printed circuit boards, adjustments are made based on the peak value of vibration acceleration that the printed circuit board installation position is borne during actual operation.

[0022] The present invention further includes the following preferred embodiments.

[0023] Further preferably, based on the classification of key component types, they are subdivided according to specific models to form a list of key components of the controllable commutation converter.

[0024] More preferably,

[0025] When the relevant temperature detection value of the component in actual operation is greater than the reference temperature when the component manufacturer determines the basic failure rate, the temperature adjustment coefficient Adjust to be greater than 1 or not adjusted;

[0026] When the relevant temperature detection value of the component in actual operation is not greater than the reference temperature when the component manufacturer determines the basic failure rate, the temperature adjustment coefficient Adjust to less than 1 or no adjustment;

[0027] When the relevant voltage detection value of the component in actual operation is greater than the reference voltage when the component manufacturer determines the basic failure rate, the voltage adjustment coefficient Adjust to be greater than 1 or not adjusted;

[0028] When the relevant voltage detection value of the component in actual operation is not greater than the reference voltage when the component manufacturer determines the basic failure rate, the voltage adjustment coefficient Adjust to less than 1 or no adjustment;

[0029] According to the peak value of vibration acceleration borne by the installation position during actual operation, the mechanical vibration adjustment coefficient Adjust to a value not less than 1.

[0030] More preferably,

[0031] For thyristors and diodes,

[0032] Temperature adjustment factor Calculate as follows:

[0033] ,

[0034] Ambient temperature coefficient ;

[0035] Junction temperature coefficient in, is the reference operating environment temperature corresponding to the basic failure rate, is the reference junction temperature of the thyristor / diode corresponding to the basic failure rate; , They are the actual operating environment temperature and the actual operating junction temperature of the thyristor / diode obtained by real-time monitoring; is the first ambient temperature parameter, is the first junction temperature parameter, .

[0036] More preferably,

[0037] For thyristors and diodes,

[0038] Voltage Regulation Factor Calculated using the following formula:

[0039] ,

[0040] in, is the thyristor / diode blocking voltage rating, is the voltage across the thyristor / diode in actual operation, is the first voltage parameter, with a value of 0.2-0.4; voltage coefficient adjustment constant The value is 0.3-0.5; is the first correction parameter, The value is 2-2.7;

[0041] Mechanical vibration coefficient The value is 1.

[0042] More preferably,

[0043] For IGBT,

[0044] Temperature adjustment factor Calculate as follows:

[0045] ,

[0046] Ambient temperature coefficient ,

[0047] Junction temperature coefficient ,

[0048] in, is the reference operating environment temperature corresponding to the basic failure rate of IGBT, is the IGBT reference junction temperature corresponding to the basic failure rate; , They are the actual operating ambient temperature and actual operating junction temperature of the IGBT obtained by real-time monitoring; is the second ambient temperature parameter, is the second junction temperature parameter.

[0049] More preferably,

[0050] The second ambient temperature parameter and the second junction temperature parameter have the following values:

[0051] .

[0052] More preferably,

[0053] For IGBT,

[0054] Voltage Regulation Factor Calculated using the following formula:

[0055] ,

[0056] in, is the IGBT collector-emitter voltage rating, is the IGBT emitter voltage value in actual operation, is the second voltage parameter, ; Voltage coefficient adjustment constant The value is 1; is the second correction parameter, ;

[0057] Mechanical vibration coefficient The value is 1.

[0058] More preferably,

[0059] For resistors and capacitors,

[0060] Temperature adjustment factor Calculate as follows:

[0061] ,

[0062] in, is the reference operating environment temperature corresponding to the basic failure rate of resistors or capacitors, They are respectively the actual operating environment temperature of the resistor or capacitor obtained by real-time monitoring; is the third ambient temperature parameter,

[0063] ;

[0064] Voltage Regulation Factor The value is 1, the mechanical vibration coefficient The value is 1.

[0065] More preferably,

[0066] For printed circuit boards,

[0067] Temperature adjustment factor Calculate as follows:

[0068] ,

[0069] in, To determine the basic failure rate of printed circuit boards The corresponding maximum temperature rise of the core components of the printed circuit board, The maximum temperature rise of the core components of the printed circuit board during actual operation. The maximum allowable temperature rise of the core components of the printed circuit board. Adjust parameters for printed circuit board temperature;

[0070] .

[0071] More preferably,

[0072] For printed circuit boards,

[0073] Mechanical vibration adjustment factor Determine by the following formula:

[0074] ,

[0075] in, It is the peak value of vibration acceleration that the printed circuit board installation position is subjected to during actual operation;

[0076] Voltage Regulation Factor The value is 1.

[0077] In a second aspect of the present application, a failure rate equivalent calculation model library of key components of a controllable commutation converter obtained based on the aforementioned construction method is disclosed, comprising a key component classification module, a failure rate basic model acquisition module, and a failure rate model calculation module taking stress into account; characterized in that:

[0078] The key component classification module determines the types of key components of the controllable commutation converter and subdivides the key components according to device models;

[0079] The failure rate basic model acquisition module determines the basic failure rate models of key components of various types and models;

[0080] The failure rate model calculation module taking into account stress determines the failure rate model of key components of various types and models taking into account stress. The stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and shock.

[0081] The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient:

[0082] ,

[0083] in, Indicates the working failure rate;

[0084] represents the basic failure rate;

[0085] , , is the failure rate adjustment factor;

[0086] represents the temperature adjustment factor;

[0087] Indicates the voltage regulation factor;

[0088] Indicates the mechanical vibration adjustment factor.

[0089] The present application also discloses an electronic device,

[0090] It includes one or more processors, one or more memories and one or more programs, wherein the one or more programs are stored in the one or more memories and are configured to be executed by the one or more processors, and the one or more programs include instructions for executing a method for constructing a failure rate equivalent calculation model library of key components of the controllable commutation converter according to the aforementioned method.

[0091] The present application also discloses a computer-readable storage medium having a computer program stored thereon, characterized in that the program is used to process the steps of the method for constructing a failure rate equivalent calculation model library of key components of the aforementioned controllable commutation converter.

[0092] Compared with the prior art, the present invention has the following beneficial effects:

[0093] Existing methods use static failure rates when evaluating converter risks. The present invention proposes a method for constructing a component failure rate model of a controllable commutation converter taking stress into account, which solves the problem of calculating component failure rates under variable stress conditions and is more in line with actual operating conditions and requirements on site. BRIEF DESCRIPTION OF THE DRAWINGS

[0094] Figure 1 The present invention is a flowchart of a method for constructing a failure rate equivalent calculation model library for key components of a controllable commutation converter. DETAILED DESCRIPTION

[0095] In order to make the purpose, technical scheme and advantages of the present invention clearer, the technical scheme of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. The embodiments described in this application are only part of the embodiments of the present invention, not all of them. Based on the spirit of the present invention, other embodiments obtained by ordinary technicians in this field without creative work are all within the scope of protection of the present invention.

[0096] like Figure 1 As shown, the present invention discloses a method for constructing an equivalent calculation model library of failure rates of key components of a controllable commutation converter, and the construction method includes the following contents:

[0097] (1) Determine the types of key components of controllable commutation converters and subdivide the key components according to device models;

[0098] The key components of the controllable commutation converter determined include thyristors, IGBTs, diodes, resistors, capacitors, and printed circuit board types; based on the classification of key component types, they are subdivided according to specific models to form a list of key components of the controllable commutation converter.

[0099] (2) Determine the basic failure rate model of key components of different types and models;

[0100] Determine the basic model of key component failure rate, including:

[0101] The basic component failure rate model is constructed using data provided by component manufacturers. The basic failure rate model is represented by a fixed failure rate λ. The failure rate λ refers to the probability of a product that has not failed at a certain moment failing per unit time after this moment, and its unit is "times / hour".

[0102] In a preferred embodiment of the present invention, a failure rate parameter with a fixed value provided by a component manufacturer is used as the basic failure rate.

[0103] (3) Determine the failure rate model of key components of each type and model taking into account stress,

[0104] On the basis of establishing the basic model of the failure rate of key components of the converter, the stress parameters that affect the failure rate of various components are determined; among them, the stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and impact;

[0105] The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient:

[0106] ,

[0107] in, Indicates the working failure rate;

[0108] represents the basic failure rate;

[0109] , , is the failure rate adjustment factor;

[0110] represents the temperature adjustment factor;

[0111] Indicates the voltage regulation factor;

[0112] Indicates the mechanical vibration adjustment factor.

[0113] When the relevant temperature detection value of the component in actual operation is greater than the reference temperature when the component manufacturer determines the basic failure rate, the temperature adjustment coefficient Adjust to be greater than 1 or not adjusted;

[0114] When the relevant temperature detection value of the component in actual operation is not greater than the reference temperature when the component manufacturer determines the basic failure rate, the temperature adjustment coefficient Adjust to less than 1 or no adjustment;

[0115] When the relevant voltage detection value of the component in actual operation is greater than the reference voltage when the component manufacturer determines the basic failure rate, the voltage adjustment coefficient Adjust to be greater than 1 or not adjusted;

[0116] When the relevant voltage detection value of the component in actual operation is not greater than the reference voltage when the component manufacturer determines the basic failure rate, the voltage adjustment coefficient Adjust to less than 1 or no adjustment;

[0117] According to the peak value of vibration acceleration borne by the installation position during actual operation, the mechanical vibration adjustment coefficient Adjust to a value not less than 1.

[0118] In a preferred embodiment of the present invention,

[0119] For thyristors and diodes,

[0120] Temperature adjustment factor Calculate as follows:

[0121] ,

[0122] in, is the reference operating environment temperature corresponding to the basic failure rate, is the reference junction temperature of the thyristor / diode corresponding to the basic failure rate; , They are the actual operating environment temperature and the actual operating junction temperature of the thyristor / diode obtained by real-time monitoring; is the first ambient temperature parameter, is the first junction temperature parameter. .

[0123] Voltage Regulation Factor Calculated using the following formula:

[0124] ,

[0125] in, is the thyristor / diode blocking voltage rating, is the voltage across the thyristor / diode in actual operation, is the first voltage parameter, with a value of 0.2-0.4; voltage coefficient adjustment constant The value is 0.3-0.5; is the first correction parameter, The value is 2-2.7.

[0126] Mechanical vibration coefficient The value is 1.

[0127] For IGBT,

[0128] Temperature adjustment factor Calculate as follows:

[0129] ,

[0130] in, is the reference operating environment temperature corresponding to the basic failure rate of IGBT, is the IGBT reference junction temperature corresponding to the basic failure rate; , They are the actual operating ambient temperature and actual operating junction temperature of the IGBT obtained by real-time monitoring; is the second ambient temperature parameter, is the second junction temperature parameter.

[0131] . Voltage Regulation Factor Calculated using the following formula:

[0132] ,

[0133] in, is the IGBT collector-emitter voltage rating, is the IGBT emitter voltage value in actual operation, is the second voltage parameter, ; Voltage coefficient adjustment constant The value is 1; is the second correction parameter, .

[0134] Mechanical vibration coefficient The value is 1.

[0135] For resistors and capacitors,

[0136] Temperature adjustment factor Calculate as follows:

[0137] ,

[0138] in, is the reference operating environment temperature corresponding to the basic failure rate of resistors or capacitors, They are respectively the actual operating environment temperature of the resistor or capacitor obtained by real-time monitoring; is the third ambient temperature parameter.

[0139] .

[0140] Voltage Regulation Factor The value is 1, the mechanical vibration coefficient The value is 1.

[0141] For printed circuit boards,

[0142] Temperature adjustment factor Calculate as follows:

[0143]

[0144] in, To determine the basic failure rate of printed circuit boards The corresponding maximum temperature rise of the core components of the printed circuit board, The maximum temperature rise of the core components of the printed circuit board during actual operation. The maximum allowable temperature rise of the core components of the printed circuit board. Adjust parameters for printed circuit board temperature.

[0145] .

[0146] Voltage Regulation Factor The value is 1.

[0147] Mechanical vibration adjustment factor Determine by the following formula:

[0148]

[0149] in, It is the peak value of vibration acceleration that the printed circuit board installation location is subjected to during actual operation.

[0150] The present application also discloses a failure rate equivalent calculation model library of key components of a controllable commutation converter obtained based on the aforementioned construction method, including a key component classification module, a failure rate basic model acquisition module, and a failure rate model calculation module taking stress into account.

[0151] The key component classification module determines the types of key components of the controllable commutation converter and subdivides the key components according to device models;

[0152] The failure rate basic model acquisition module determines the basic failure rate models of key components of various types and models;

[0153] The failure rate model calculation module taking into account stress determines the failure rate model of key components of various types and models taking into account stress. The stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and shock.

[0154] The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient:

[0155] ,

[0156] in, Indicates the working failure rate;

[0157] represents the basic failure rate;

[0158] , , is the failure rate adjustment factor;

[0159] represents the temperature adjustment factor;

[0160] Indicates the voltage regulation factor;

[0161] Indicates the mechanical vibration adjustment factor.

[0162] The technical solution of the present invention is described in detail below in conjunction with an embodiment.

[0163] First, follow the steps below to build a model library of key electrical components and stress failure rates of controllable commutation converters:

[0164] (1) Determine the types of key electrical components of controllable commutation converters and subdivide the key components according to device models;

[0165] Among them, the key components of the controllable commutation converter determined include thyristors, IGBTs, diodes, resistors, capacitors, and printed circuit board types; based on the classification of key component types, they are subdivided according to specific models to form a list of key components of the controllable commutation converter.

[0166]

[0167] (2) Determine the basic failure rate model of key components of different types and models;

[0168] The basic model of component failure rate is constructed using data provided by device manufacturers. The basic model of failure rate is represented by a fixed value failure rate λ, with the unit of "times / hour".

[0169] In a preferred embodiment of the present invention, a failure rate parameter with a fixed value provided by a component manufacturer is used as the basic failure rate.

[0170] (3) Determine the failure rate model of key components and parts of each type and model taking into account stress;

[0171] On the basis of establishing the basic model of the failure rate of key components of the converter, the stress parameters that affect the failure rate of various components are determined. Among them, the stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and impact.

[0172] The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient:

[0173] ,

[0174] in, Indicates the working failure rate;

[0175] represents the basic failure rate;

[0176] , , is the failure rate adjustment factor;

[0177] represents the temperature coefficient;

[0178] represents the voltage coefficient;

[0179] Represents the mechanical vibration coefficient.

[0180] And follow the steps below to get the value of the failure rate adjustment factor:

[0181] Thyristor, diode

[0182] (1) Temperature adjustment coefficient The calculation steps are:

[0183] 1) Determine the basic failure rate based on the basic failure rate model of the component Corresponding benchmark operating environment temperature =50℃, reference junction temperature ℃;

[0184] 2) Determine the actual operating environment temperature =70℃, actual operating junction temperature =120℃;

[0185] 3) Calculate the temperature adjustment factor , Temperature coefficient By ambient temperature coefficient and junction temperature coefficient composition,

[0186] Ambient temperature coefficient ;

[0187] Junction temperature coefficient ;

[0188] The composition is ,

[0189] 4) Take , the ambient temperature coefficient calculation formula is: ;

[0190] 5) Take, The calculation formula of junction temperature coefficient is: ;

[0191] 6) Calculate the actual temperature adjustment factor .

[0192] (2) Voltage coefficient The calculation steps are:

[0193] 1) Determine the thyristor / diode blocking voltage rating based on the device parameter table , the blocking voltage rating of a thyristor in this embodiment is =8.5kV;

[0194] 2) Determine the voltage across the thyristor / diode under actual operating conditions =6.5kV;

[0195] 3) Get parameters , , The voltage coefficient calculation formula is: ;

[0196] 4) Mechanical vibration coefficient The calculation steps are:

[0197] For thyristor / diode devices, directly take the mechanical vibration coefficient , no adjustment is made.

[0198] IGBT

[0199] (1) Temperature coefficient The calculation steps are:

[0200] 1) Determine the basic failure rate based on the basic failure rate model of the component Corresponding benchmark operating environment temperature ℃, reference junction temperature ℃;

[0201] 2) Determine the actual operating environment temperature ℃, actual operating junction temperature ℃;

[0202] 3) Calculate the temperature coefficient , Temperature coefficient By ambient temperature coefficient and junction temperature coefficient Composition, the composition method is ;

[0203] 4) Take , the ambient temperature coefficient calculation formula is:

[0204] ;

[0205] 5) Take ,

[0206] The calculation formula of junction temperature coefficient is:

[0207] ;

[0208] 6) Calculate the actual temperature adjustment factor ,

[0209] (2) Voltage adjustment factor The calculation steps are:

[0210] 1) Determine the collector-emitter voltage of the IGBT based on the device parameter table Rating ;

[0211] 2) Determine the collector-emitter voltage under actual operating conditions kV;

[0212] 3) ,

[0213] Take parameters ,

[0214] ;

[0215] 4) The voltage coefficient calculation formula is:

[0216] ,

[0217] (3) Mechanical vibration coefficient The calculation steps are:

[0218] For IGBT devices, the mechanical vibration coefficient is directly taken , no adjustment is made.

[0219] resistance

[0220] (1) Temperature coefficient The calculation steps are:

[0221] 1) Determine the basic failure rate based on the basic failure rate model of the component Corresponding benchmark operating environment temperature ℃;

[0222] 2) Determine the actual operating environment temperature ℃;

[0223] 3) Take , temperature coefficient calculation formula:

[0224] .

[0225] (2) Voltage coefficient The calculation steps are:

[0226] For resistor devices, directly take the voltage coefficient , no adjustment is made.

[0227] (3) Mechanical vibration coefficient The calculation steps are:

[0228] For resistor devices, directly take the mechanical vibration coefficient , no adjustment is made.

[0229] Printed Circuit Board

[0230] (1) Temperature coefficient The calculation steps are:

[0231] 1) Determine the basic failure rate based on the basic failure rate model of the component The corresponding maximum temperature rise of the core components of the printed circuit board =30℃; Maximum allowable temperature rise of core components of printed circuit boards ;

[0232] 2) Determine the maximum temperature rise of the core components of the printed circuit board during actual operation =20℃;

[0233] 3) =1, calculate the temperature coefficient ;

[0234] ,

[0235] (2) Voltage coefficient The calculation steps are:

[0236] For printed circuit boards, the voltage coefficient is directly taken , no adjustment is made.

[0237] (3) Mechanical vibration coefficient The calculation steps are:

[0238] 1) Determine the peak vibration acceleration that the printed circuit board installation location is subjected to during actual operation =10m / s 2 ;

[0239] 2) Determine the mechanical vibration coefficient according to the following formula :

[0240] .

[0241] The present disclosure may be a system, a method and / or a computer program product. The computer program product may include a computer-readable storage medium carrying computer-readable program instructions for causing a processor to implement various aspects of the present disclosure.

[0242] A computer-readable storage medium may be a tangible device that can hold and store instructions used by an instruction execution device. A computer-readable storage medium may be, for example, but not limited to, an electrical storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the above. More specific examples (a non-exhaustive list) of computer-readable storage media include: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a static random access memory (SRAM), a portable compact disk read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanical encoding device, such as a punch card or a raised structure in a groove on which instructions are stored, and any suitable combination of the above. The computer-readable storage medium used herein is not to be interpreted as a transient signal itself, such as a radio wave or other freely propagating electromagnetic wave, an electromagnetic wave propagating through a waveguide or other transmission medium (e.g., a light pulse through a fiber optic cable), or an electrical signal transmitted through a wire.

[0243] The computer-readable program instructions described herein can be downloaded from a computer-readable storage medium to each computing / processing device, or downloaded to an external computer or external storage device via a network, such as the Internet, a local area network, a wide area network, and / or a wireless network. The network can include copper transmission cables, optical fiber transmissions, wireless transmissions, routers, firewalls, switches, gateway computers, and / or edge servers. The network adapter card or network interface in each computing / processing device receives the computer-readable program instructions from the network and forwards the computer-readable program instructions for storage in the computer-readable storage medium in each computing / processing device.

[0244] The computer program instructions for performing the operations of the present disclosure may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, state setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages, such as Smalltalk, C++, etc., and conventional procedural programming languages, such as "C" language or similar programming languages. The computer-readable program instructions may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer, partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider to connect through the Internet). In some embodiments, by using the state information of the computer-readable program instructions to personalize an electronic circuit, such as a programmable logic circuit, a field programmable gate array (FPGA), or a programmable logic array (PLA), the electronic circuit may execute the computer-readable program instructions, thereby implementing various aspects of the present disclosure.

[0245] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents, and any modifications or equivalent replacements that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for constructing an equivalent calculation model library for failure rate of key components of a controllable phase-commutated converter, characterized in that: The construction method includes the following contents: (1) Determine the types of key components of controllable commutation converters and subdivide the key components according to device models; key component types include thyristors, IGBTs, diodes, resistors, capacitors, and printed circuit boards; (2) Determine the basic failure rate model of key components of various types and models; the basic failure rate model is represented by a fixed failure rate λ, which refers to the probability of a product that has not failed at a certain time and will fail per unit time after this time. The unit is "times / hour". The fixed failure rate parameter provided by the component manufacturer is used as the basic failure rate; (3) Determine the failure rate model of key components of each type and model taking into account stress, On the basis of establishing the basic model of the failure rate of key components of the converter, the stress parameters that affect the failure rate of various components are determined; among them, the stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and impact; The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient: in, Indicates the working failure rate; represents the basic failure rate; is the failure rate adjustment factor; Indicates the temperature adjustment coefficient. For thyristors, diodes, and IGBTs, the temperature adjustment coefficient By ambient temperature coefficient and junction temperature coefficient Multiply them together to get; Indicates the voltage regulation factor; Indicates the mechanical vibration adjustment coefficient. For thyristors, diodes, IGBTs and resistors, the mechanical vibration coefficient , no adjustment is made; for printed circuit boards, adjustments are made based on the peak value of vibration acceleration that the printed circuit board installation position is subjected to during actual operation.

2. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable phase-commutated converter according to claim 1, characterized in that: Based on the classification of key component types, they are subdivided according to specific models to form a list of key components of controllable commutation converters.

3. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable phase-commutated converter according to claim 1, characterized in that: When the relevant temperature detection value of the component in actual operation is greater than the reference temperature when the component manufacturer determines the basic failure rate, the temperature adjustment coefficient Adjust to be greater than 1 or not adjusted; When the relevant temperature detection value of the component in actual operation is not greater than the reference temperature when the component manufacturer determines the basic failure rate, the temperature adjustment coefficient Adjust to less than 1 or no adjustment; When the relevant voltage detection value of the component in actual operation is greater than the reference voltage when the component manufacturer determines the basic failure rate, the voltage adjustment coefficient Adjust to be greater than 1 or not adjusted; When the relevant voltage detection value of the component in actual operation is not greater than the reference voltage when the component manufacturer determines the basic failure rate, the voltage adjustment coefficient Adjust to less than 1 or no adjustment; According to the peak value of vibration acceleration borne by the installation position during actual operation, the mechanical vibration adjustment coefficient Adjust to a value not less than 1.

4. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 1 or 3, characterized in that: For thyristors and diodes, Temperature adjustment factor Calculate as follows: Ambient temperature coefficient ; Junction temperature coefficient in, is the reference operating environment temperature corresponding to the basic failure rate, is the reference junction temperature of the thyristor / diode corresponding to the basic failure rate; , They are the actual operating environment temperature and the actual operating junction temperature of the thyristor / diode obtained by real-time monitoring; is the first ambient temperature parameter, is the first junction temperature parameter, .

5. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 4 is characterized in that: For thyristors and diodes, Voltage Regulation Factor Calculated using the following formula: in, is the thyristor / diode blocking voltage rating, is the voltage across the thyristor / diode in actual operation, is the first voltage parameter, with a value of 0.2-0.4; voltage coefficient adjustment constant The value is 0.3-0.5; is the first correction parameter, The value is 2-2.7; Mechanical vibration coefficient The value is 1.

6. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 1 or 3, characterized in that: For IGBT, Temperature adjustment factor Calculate as follows: Ambient temperature coefficient ; Junction temperature coefficient ; in, is the reference operating environment temperature corresponding to the basic failure rate of IGBT, is the IGBT reference junction temperature corresponding to the basic failure rate; , They are the actual operating ambient temperature and actual operating junction temperature of the IGBT obtained by real-time monitoring; is the second ambient temperature parameter, is the second junction temperature parameter.

7. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 6, characterized in that: The second ambient temperature parameter and the second junction temperature parameter have the following values: 。 8. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 7, characterized in that: For IGBT, Voltage Regulation Factor Calculated using the following formula: in, is the IGBT collector-emitter voltage rating, is the IGBT emitter voltage value in actual operation, is the second voltage parameter, ; Voltage coefficient adjustment constant The value is 1; is the second correction parameter, ; Mechanical vibration coefficient The value is 1.

9. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 1 or 3, characterized in that: For resistors and capacitors, Temperature adjustment factor Calculate as follows: in, is the reference operating environment temperature corresponding to the basic failure rate of resistors or capacitors, They are respectively the actual operating environment temperature of the resistor or capacitor obtained by real-time monitoring; is the third ambient temperature parameter, ； Voltage Regulation Factor The value is 1, the mechanical vibration coefficient The value is 1.

10. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable commutation converter according to claim 1 or 3, characterized in that: For printed circuit boards, Temperature adjustment factor Calculate as follows: in, To determine the basic failure rate of printed circuit boards The corresponding maximum temperature rise of the core components of the printed circuit board, The maximum temperature rise of the core components of the printed circuit board during actual operation. The maximum allowable temperature rise of the core components of the printed circuit board. Adjust parameters for printed circuit board temperature; 。 11. The method for constructing an equivalent calculation model library for failure rate of key components of a controllable phase-commutated converter according to claim 10, characterized in that: For printed circuit boards, Mechanical vibration adjustment factor Determine as follows: in, It is the peak value of vibration acceleration that the printed circuit board installation position is subjected to during actual operation; Voltage Regulation Factor The value is 1.

12. A controllable phase-commutated converter key component failure rate equivalent calculation model library obtained based on any one of the construction methods of claims 1-11, comprising a key component classification module, a failure rate basic model acquisition module, and a failure rate model calculation module taking stress into account; characterized in that: The key component classification module determines the types of key components of the controllable commutation converter and subdivides the key components according to device models; The failure rate basic model acquisition module determines the basic failure rate models of key components of various types and models; The failure rate model calculation module taking into account stress determines the failure rate model of key components of various types and models taking into account stress. The stress parameters that affect the failure rate of components include temperature, voltage, mechanical vibration and shock. The failure rate model of key components of various types and models taking into account stress is constructed as follows, which consists of the basic failure rate and the failure rate adjustment coefficient: in, Indicates the working failure rate; represents the basic failure rate; is the failure rate adjustment factor; represents the temperature adjustment factor; Indicates the voltage regulation factor; Indicates the mechanical vibration adjustment factor.

13. An electronic device, characterized in that: It comprises one or more processors, one or more memories and one or more programs, wherein the one or more programs are stored in the one or more memories and are configured to be executed by the one or more processors, and the one or more programs include instructions for executing a method for constructing a failure rate equivalent calculation model library of key components of a controllable commutation converter according to any one of claims 1-11.

14. A computer-readable storage medium having a computer program stored thereon, characterized in that: The program processes the steps of the method for constructing an equivalent calculation model library for failure rates of key components of a controllable commutation converter as described in any one of claims 1-11.

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