Charging Coil Module and Related Products, and Preparation Method of Charging Coil Module

Abstract

The present application provides a charging coil module, its related products, and a preparation method of the charging coil module. In the present application, the substrate of the circuit board is arranged on the same layer as the substrate of the charging coil, the first wiring layer is arranged on the same layer as the first coil, and the second wiring layer is arranged on the same layer as the second coil, so that the charging coil and the circuit board form a structure with relatively strong integrity. The first coil and the second coil can be directly electrically connected to the wiring on the circuit board, such as the wiring of the first wiring layer or the second wiring layer of the circuit board. Thus, on the one hand, the charging path between the charging coil and the load can be shortened, thereby reducing the link loss. On the other hand, the BTB connector can be saved, the structure of the charging coil module can be simplified, and the cost investment of the charging coil module can be reduced.

Description

Technical Field

[0001] This application relates to the field of wireless charging, and particularly to a charging coil module and related products thereof, and a preparation method of the charging coil module. Background Art

[0002] Currently, wireless charging technology has attracted more and more attention from major manufacturers. The power supply path of traditional wireless charging is electrically connected from the charging coil to the adapter small board through the coil BTB (board to board), and then through the adapter small board and the small board BTB to the charging FPC (flexible printed circuit), and finally the power is supplied to the device or chip that needs to be driven by electric energy through the charging circuit board. The power supply path of the traditional wireless charging coil is relatively long, with large losses and low wireless charging efficiency. Summary of the Invention

[0003] Embodiments of this application provide a charging coil module, related products including the charging coil module, and a preparation method including the charging coil module, aiming to obtain a charging coil module with a shorter power supply path and related products including the charging coil module.

[0004] In a first aspect, a charging coil module is provided. The charging coil module includes a charging coil and a circuit board;

[0005] The charging coil includes a substrate, a first coil, and a second coil, and the substrate of the charging coil is located between the first coil and the second coil;

[0006] The circuit board includes a substrate, a first wiring layer, and a second wiring layer, and the substrate of the circuit board is located between the first wiring layer and the second wiring layer;

[0007] The substrate of the circuit board and the substrate of the charging coil are of an integrated structure, the first wiring layer and the first coil are arranged on the same layer, and the second wiring layer and the second coil are arranged on the same layer. It can be understood that the integrated structure can be two parts of the same board piece. Compared with the first coil and the second coil being electrically connected to the circuit board through a BTB connector, the first coil and the second coil in this embodiment can be directly electrically connected to the traces on the circuit board (such as the traces on the first wiring layer or the second wiring layer of the circuit board), so that on the one hand, the charging path between the charging coil and the load can be shortened, thereby reducing the link loss and improving the wireless charging efficiency.

[0008] It can be understood that by setting the substrate of the circuit board and the substrate of the charging coil to be an integrated structure, and setting the first wiring layer and the first coil on the same layer, and the second wiring layer and the second coil on the same layer, the charging coil and the circuit board form a structure with relatively strong integrity, and the structural strength of the charging coil module is better. In this way, compared with the solution of stacking the charging coil on the circuit board, the charging coil and the circuit board in this embodiment have an overlapping area in the thickness direction, and the thickness of the charging coil module can be reduced to a large extent.

[0009] It can be understood that compared with the solution of separately manufacturing the charging coil and the circuit board and then connecting the charging coil to the circuit board through a BTB connector, in this embodiment, the circuit board can be manufactured together while manufacturing the charging coil, or the charging coil can be manufactured together while manufacturing the circuit board. On the one hand, this can save one process of manufacturing the charging coil or the circuit board, thereby reducing the cost investment of the charging coil module; on the other hand, the charging coil and the circuit board are set as an integrated structure, which can save the assembly steps of the charging coil module and reduce the manufacturing difficulty of the charging coil module.

[0010] In a possible implementation manner, the first wiring layer includes a first wiring, and the first wiring and the first coil are of an integrally formed structure;

[0011] And / or, the second wiring layer includes a second wiring, and the second wiring and the second coil are of an integrally formed structure.

[0012] It can be understood that the first coil can be directly electrically connected to the first wiring of the circuit board and / or, the second coil can be directly electrically connected to the second wiring of the circuit board, so as to greatly shorten the charging path between the charging coil and the load, and further reduce the link loss.

[0013] In a possible implementation manner, the charging coil includes a first insulating layer, the first insulating layer of the charging coil is arranged on the first coil and covers the first coil; the first insulating layer of the charging coil and the first coil are on the same side of the substrate of the charging coil.

[0014] The circuit board includes a first insulating layer, and the first insulating layer of the circuit board is arranged on the first wiring layer and covers the first wiring layer;

[0015] The first insulating layer of the charging coil and the first insulating layer of the circuit board are arranged on the same layer and are of an integrally formed structure.

[0016] It can be understood that the first insulating layer of the charging coil and the first insulating layer of the circuit board are arranged on the same layer. In this way, the first insulating layer of the circuit board can be prepared simultaneously when the first insulating layer of the charging coil is prepared, or the first insulating layer of the charging coil can be prepared simultaneously when the first insulating layer of the circuit board is prepared. On the one hand, this can save a process of preparing the first insulating layer of the charging coil or the first insulating layer of the circuit board, thereby reducing the cost investment of the charging coil module.

[0017] In a possible implementation manner, in the length direction of the circuit board, the circuit board includes a first part, a second part, and a third part that are sequentially connected; when the first part and the third part are folded or unfolded relative to each other, the second part is bent;

[0018] The circuit board includes a first sub-insulating layer, a second sub-insulating layer, and a third sub-insulating layer. The first sub-insulating layer is disposed on the first wiring layer of the second part, the second sub-insulating layer is disposed on the first wiring layer of the first part, and the third sub-insulating layer is disposed on the first wiring layer of the third part;

[0019] The glass transition temperature of the first sub-insulating layer is greater than the glass transition temperature of the second sub-insulating layer and the glass transition temperature of the third sub-insulating layer.

[0020] It can be understood that by setting the glass transition temperature of the first sub-insulating layer to be greater than the glass transition temperature of the second sub-insulating layer and the glass transition temperature of the third sub-insulating layer, on the one hand, the first sub-insulating layer is not easily vitrified due to high-temperature processing in the subsequent processes of the circuit board, thereby avoiding the bending stress neutral line of the second part of the circuit board from shifting and the first sub-insulating layer losing its protection of the first wiring layer of the second part; on the other hand, the first sub-insulating layer is not easily vitrified during the folding or flattening of the circuit board, thereby avoiding the bending stress neutral line of the second part of the circuit board from shifting and the first sub-insulating layer losing its protection of the first wiring layer of the second part.

[0021] In a possible implementation manner, the charging coil includes a first insulating layer. The first insulating layer of the charging coil is disposed on the first coil and covers the first coil;

[0022] The first insulating layer of the charging coil and the second sub-insulating layer are of an integrally formed structure; or, the first insulating layer of the charging coil and the third sub-insulating layer are of an integrally formed structure.

[0023] It can be understood that by setting the first insulating layer of the charging coil and the second sub-insulating layer to be an integrally formed structure; or, the first insulating layer of the charging coil and the third sub-insulating layer to be an integrally formed structure, the second sub-insulating layer or the third sub-insulating layer of the circuit board can be prepared simultaneously while preparing the first insulating layer of the charging coil, or the first insulating layer of the charging coil can be prepared simultaneously while preparing the second sub-insulating layer or the third sub-insulating layer of the circuit board. In this way, on the one hand, one process of preparing the first insulating layer of the charging coil or the second sub-insulating layer or the third sub-insulating layer of the circuit board can be omitted, thereby reducing the cost investment of the charging coil module.

[0024] In a possible implementation manner, the glass transition temperature of the first sub-insulating layer is greater than or equal to 90 °C, and the glass transition temperatures of the second sub-insulating layer and the third sub-insulating layer are both less than 90 °C.

[0025] It can be understood that by setting the glass transition temperature of the first sub-insulating layer to be greater than or equal to 90 °C, on the one hand, the first sub-insulating layer is not easily vitrified due to high-temperature processing in the subsequent processes of the circuit board, thereby avoiding the shift of the bending stress neutral line of the second part of the circuit board and the first sub-insulating layer losing the protection of the first wiring layer of the second part; on the other hand, the first sub-insulating layer is not easily vitrified during the folding or flattening of the circuit board, thereby avoiding the shift of the bending stress neutral line of the second part of the circuit board and the first sub-insulating layer losing the protection of the first wiring layer of the second part.

[0026] In addition, since the first part and the third part of the circuit board can be not bent during the folding or unfolding of the circuit board, the problem of the center line shift of the first part and the third part of the circuit board does not need to be considered. In this embodiment, by setting the glass transition temperatures of the second sub-insulating layer and the third sub-insulating layer to be both less than 90 °C, in this way, the second sub-insulating layer and the third sub-insulating layer do not need to be respectively disposed on the first wiring layer of the first part and the first wiring layer of the third part through high-temperature treatment, thereby reducing the covering difficulty of the second sub-insulating layer and the third sub-insulating layer.

[0027] In a possible implementation manner, the thickness of the first wiring layer of the first part and the thickness of the first wiring layer of the third part are both greater than the thickness of the first wiring layer of the second part.

[0028] It can be understood that by setting the thickness of the first wiring layer of the second part to be relatively small, the stress neutral line of the second part of the circuit board is adjusted so that the stress neutral line of the second part of the circuit board is located on the insulating layer of the second part of the circuit board, that is, to prevent the stress neutral line of the second part of the circuit board from being located on the first wiring layer of the second part, thereby ensuring that the first sub-insulating layer can protect the first wiring layer of the second part, and further improving the service life of the charging coil module.

[0029] In a possible implementation manner, the first wiring layer of the first part is composed of three metal layers, and the second wiring of the second part is composed of two metal layers;

[0030] The first metal layer of the first wiring layer of the first part is arranged on the same layer as the first metal layer of the first wiring layer of the second part and is an integrally formed structure,

[0031] The second metal layer of the first wiring layer of the first part is arranged on the same layer as the second metal layer of the first wiring layer of the second part and is an integrally formed structure.

[0032] It can be understood that since the first wiring layer of the second part does not include the third metal layer, the third metal layer of the first wiring layer of the first part protrudes relative to the second metal layer of the first wiring layer of the second part.

[0033] In a possible implementation manner, the distance d between the first sub-insulating layer and the third metal layer of the first wiring layer of the first part 1 satisfies: 0.2 mm ≤ d 1 ≤ 0.5 mm. In this way, it can be ensured that the first wiring layer and the second wiring layer of the second part of the circuit board are not easily broken due to excessive stress concentration, thereby ensuring that the charging coil module has a better service life.

[0034] In a possible implementation manner, a part of the second sub-insulating layer overlaps the first sub-insulating layer;

[0035] The width L of the part of the second sub-insulating layer arranged on the first sub-insulating layer 1 satisfies: L 1 ≥ 0.05 mm. In this way, during the bending process of the second part of the circuit board, the connection between the first sub-insulating layer and the second sub-insulating layer is not easily separated, the first wiring layer of the second part of the circuit board can be covered by the first sub-insulating layer and the second sub-insulating layer, and the first wiring layer of the second part of the circuit board is not easily broken, thereby ensuring that the charging coil module has a better service life.

[0036] In a possible implementation manner, the thickness of the first adhesive layer of the first sub-insulating layer is less than the thicknesses of the second adhesive layer of the second sub-insulating layer and the third adhesive layer of the third sub-insulating layer.

[0037] It can be understood that by setting the thickness of the first adhesive layer of the first sub-insulating layer to be relatively small, the first adhesive layer of the relatively thin first sub-insulating layer is used to cover the first wiring layer of the relatively thin second part, so as to ensure that while not significantly increasing the thickness of the circuit board, it can also better cover the first wiring layer of the second part of the circuit board and better protect the first wiring layer of the second part.

[0038] In addition, by setting the thickness of the second adhesive layer of the second sub-insulating layer to be relatively thick, the relatively thick second adhesive layer of the second sub-insulating layer is used to cover the first wiring layer of the relatively thick first part, so as to ensure that the second sub-insulating layer can better cover the first wiring layer of the first part of the circuit board, that is, the second sub-insulating layer can well fill the gap between two adjacent wirings in the first wiring layer of the first part.

[0039] In addition, by setting the thickness of the third adhesive layer of the third sub-insulating layer to be relatively thick, the relatively thick third adhesive layer of the third sub-insulating layer is used to cover the first wiring layer of the relatively thick third part, so as to ensure that the third sub-insulating layer can better cover the first wiring layer of the third part of the circuit board, that is, the third sub-insulating layer can well fill the gap between two adjacent wirings in the first wiring layer of the third part.

[0040] In a possible implementation manner, the thickness of the first adhesive layer of the first sub-insulating layer is less than 25 microns, and the thicknesses of the second adhesive layer of the second sub-insulating layer and the third adhesive layer of the third sub-insulating layer are greater than 25 microns.

[0041] In a possible implementation manner, the charging coil includes a first nanocrystalline layer and a first graphite layer, and the first nanocrystalline layer and the first graphite layer are stacked in sequence on the first insulating layer of the charging coil.

[0042] In a possible implementation manner, the number of turns of the first coil is greater than or equal to 2, and the distance between two adjacent turns in the first coil is in the range of 40 microns to 100 microns.

[0043] It can be understood that the first coil in the charging coil can achieve a narrow pitch setting. Under the condition of the same size, compared with the charging coil without the narrow pitch setting, the metal (such as copper) content per unit area of the charging coil in this embodiment is higher, thereby effectively reducing the charging loss, which is beneficial to extending the time for the charging coil to maintain a 50W peak during the charging process and improving the charging efficiency.

[0044] In addition, under the condition that the outer diameters of the charging coils are the same, compared with the charging coil module that does not implement narrow pitch setting, the charging coil in this embodiment can achieve narrow pitch setting in the first coil of the charging coil without reducing the volume of the traces in the first coil, so as to thin the thickness of the first coil and thus thin the overall thickness of the charging coil. In other words, the charging coil of this embodiment can achieve miniaturization of the charging coil by reducing the distance between two adjacent turns in the first coil.

[0045] In a possible implementation manner, each turn of the first coil includes a first conductive part and a second conductive part. The first conductive part is disposed on the substrate of the charging coil, and the second conductive part is formed on the first conductive part by electroplating.

[0046] In a possible implementation manner, the line width of the first coil is greater than or equal to 50 microns. Exemplarily, the line width of the first coil is between 50 microns and 100 microns. In this way, it is beneficial to reduce the charging impedance of the charging coil.

[0047] In a possible implementation manner, the thickness of the first coil is greater than or equal to 50 microns. Exemplarily, the thickness of the first coil is between 50 microns and 100 microns. In this way, it is beneficial to reduce the charging impedance of the charging coil.

[0048] In a possible implementation manner, the first conductive part further includes two layers of metal, wherein the second layer of metal is formed on the first layer of metal by electroplating, and the first layer of metal is disposed on the substrate of the charging coil.

[0049] In a second aspect, an electronic device is provided. The electronic device includes a battery and the charging coil module as described above, and the charging coil module is used to charge the battery. By applying the charging coil module with higher charging efficiency to the electronic device, the electronic device can also achieve higher charging efficiency.

[0050] In a third aspect, a charger is provided. The charger includes the charging coil module as described above. By applying the charging coil module with higher charging efficiency to the charger, the charger can also achieve higher charging efficiency.

[0051] In a fourth aspect, a charging system is provided. The charging system includes an electronic device and a charger, and at least one of the electronic device and the charger includes the charging coil module as described above, and the charger is used to charge the electronic device.

[0052] In a fifth aspect, a method for manufacturing a charging coil module is provided, and the method includes:

[0053] Prepare a double-sided board, wherein the double-sided board includes a substrate, a first etching layer, and a second etching layer, and the substrate of the double-sided board is located between the first etching layer and the second etching layer;

[0054] Process the first etching layer of the double-sided board to form the first coil of the charging coil and the first wiring layer of the circuit board;

[0055] Process the second etching layer of the double-sided board to form the second coil of the charging coil and the second wiring layer of the circuit board.

[0056] It can be understood that the substrate of the circuit board and the substrate of the charging coil are formed in the same process, the first wiring layer and the first coil are formed in the same process, and the second wiring layer and the second coil are formed in the same process, so that the charging coil and the circuit board form a structure with strong integrity.

[0057] It can be understood that compared with the solution of separately preparing the charging coil and the circuit board and then connecting the charging coil to the circuit board through a BTB connector, in this embodiment, the circuit board can be prepared together while preparing the charging coil, or the charging coil can be prepared together while preparing the circuit board. On the one hand, this can save a process of preparing the charging coil or the circuit board, thereby reducing the cost investment of the charging coil module; on the other hand, the charging coil and the circuit board are set as an integral structure, which can save the assembly steps of the charging coil module and reduce the preparation difficulty of the charging coil module.

[0058] In addition, compared with the first coil and the second coil being electrically connected to the circuit board through a BTB connector, the first coil and the second coil in this embodiment can be directly electrically connected to the traces on the circuit board (such as the traces on the first wiring layer or the second wiring layer of the circuit board), so as to save the BTB connector, simplify the structure of the charging coil module, and reduce the cost investment of the charging coil module.

[0059] In a possible implementation manner, the first wiring layer includes a first trace, and the first trace and the first coil are an integrally formed structure;

[0060] And / or, the second wiring layer includes a second trace, and the second trace and the second coil are an integrally formed structure.

[0061] It can be understood that the first coil can be directly electrically connected to the first trace of the circuit board and / or the second coil can be directly electrically connected to the second trace of the circuit board, so as to greatly shorten the charging path between the charging coil and the load, thereby reducing the link loss.

[0062] In a possible implementation manner, in the step of preparing the double-sided board, the method includes:

[0063] Bond the first substrate of the first flexible copper clad laminate and the second substrate of the second flexible copper clad laminate to two surfaces of the bonding sheet;

[0064] Press the first flexible copper clad laminate, the bonding sheet, and the second flexible copper clad laminate;

[0065] Electroplate on the first metal layer of the first flexible copper clad laminate to form a third metal layer, and the first metal layer and the third metal layer constitute a first etching layer;

[0066] Electroplate on the second metal layer of the second flexible copper clad laminate to form a fourth metal layer, and the second metal layer and the fourth metal layer constitute a second etching layer.

[0067] In a possible implementation manner, the method further includes:

[0068] Form a first covering layer on the first coil of the charging coil and the first wiring layer of the circuit board, and form a second covering layer on the second coil of the charging coil and the second wiring layer of the circuit board, where the first covering layer includes a first insulating layer of the charging coil and a first insulating layer of the circuit board, and the second covering layer includes a second insulating layer of the charging coil and a second insulating layer of the circuit board.

[0069] It can be understood that the first insulating layer of the charging coil and the first insulating layer of the circuit board are formed in the same process, that is, the first insulating layer of the circuit board can be prepared simultaneously when preparing the first insulating layer of the charging coil, or the first insulating layer of the charging coil can be prepared simultaneously when preparing the first insulating layer of the circuit board. In this way, on the one hand, a process of preparing the first insulating layer of the charging coil or the first insulating layer of the circuit board can be saved, thereby reducing the cost investment of the charging coil module.

[0070] It can be understood that the second insulating layer of the charging coil and the second insulating layer of the circuit board are formed in the same process, that is, the second insulating layer of the circuit board can be prepared simultaneously when preparing the second insulating layer of the charging coil, or the second insulating layer of the charging coil can be prepared simultaneously when preparing the second insulating layer of the circuit board. In this way, on the one hand, a process of preparing the second insulating layer of the charging coil or the second insulating layer of the circuit board can be saved, thereby reducing the cost investment of the charging coil module.

[0071] In a possible implementation manner, in the length direction of the circuit board, the circuit board includes a first part, a second part, and a third part connected in sequence; when the first part and the third part are folded or unfolded relative to each other, the second part is bent.

[0072] The method further includes:

[0073] A first sub-insulating layer is formed on the first wiring layer of the second part of the circuit board;

[0074] A second sub-insulating layer is formed on the first wiring layer of the first part of the circuit board, and a part of the second sub-insulating layer overlaps the first sub-insulating layer, wherein the glass transition temperature of the first sub-insulating layer is greater than the glass transition temperature of the second sub-insulating layer.

[0075] A third sub-insulating layer is formed on the first wiring layer of the third part of the circuit board, and a part of the third sub-insulating layer overlaps the first sub-insulating layer, wherein the glass transition temperature of the first sub-insulating layer is greater than the glass transition temperature of the third sub-insulating layer.

[0076] Press the first sub-insulating layer, the second sub-insulating layer and the third sub-insulating layer.

[0077] It can be understood that by setting the glass transition temperature of the first sub-insulating layer to be greater than the glass transition temperature of the second sub-insulating layer and the glass transition temperature of the third sub-insulating layer, on the one hand, the first sub-insulating layer is not easily vitrified due to high-temperature processing in the subsequent processes of the circuit board, thereby avoiding the offset of the bending stress neutral line of the second part of the circuit board and the loss of protection of the first wiring layer of the second part by the first sub-insulating layer; on the other hand, the first sub-insulating layer is not easily vitrified during the folding or flattening of the circuit board, thereby avoiding the offset of the bending stress neutral line of the second part of the circuit board and the loss of protection of the first wiring layer of the second part by the first sub-insulating layer.

[0078] In a possible implementation manner, the pressing is a hot pressing process, the hot pressing temperature of the hot pressing process is in the range of 150 °C to 200 °C, and the hot pressing time of the hot pressing process is in the range of 0.5 hours to 3 hours;

[0079] Or, the pressing is a pressure transfer process, the pressure transfer temperature of the pressure transfer process is in the range of 170 °C to 190 °C, and the hot pressing time of the pressure transfer process is in the range of 0.5 hours to 3 hours;

[0080] Or, the pressing is a quick pressing process, the quick pressing temperature of the quick pressing process is in the range of 170 °C to 190 °C, and the quick pressing time of the quick pressing process is in the range of 1 minute to 8 minutes.

[0081] It can be understood that this embodiment adopts a one-time pressing process, which can avoid the vitrification of the first sub-insulating layer at high temperatures multiple times, thereby avoiding the loss of protection of the first wiring layer of the second part of the circuit board due to the offset of the stress neutral line during the folding movement. Description of the Drawings

[0082] To more clearly illustrate the technical solutions in the embodiments of the present application or the background art, the following will describe the drawings required to be used in the embodiments of the present application or the background art.

[0083] Figure 1 is a schematic structural diagram of a wireless charging system provided by an embodiment of the present application;

[0084] Figure 2 is Figure 1 a schematic structural diagram of an implementation manner of an electronic device of the wireless charging system shown;

[0085] Figure 3 is Figure 2 a schematic structural diagram of an implementation manner in a charging coil module shown;

[0086] Figure 4 is Figure 3 a schematic structural diagram of an implementation manner in a charging coil shown;

[0087] Figure 5 is Figure 4 a partial exploded view of an implementation manner of a charging coil shown;

[0088] Figure 6 is Figure 4 a schematic structural diagram of a substrate, a first coil, and a second coil shown;

[0089] Figure 7 is Figure 6 a schematic structural diagram of an implementation manner of a first coil shown;

[0090] Figure 8 is Figure 6 a partial sectional view of an implementation manner of the structure shown on line A-A;

[0091] Figure 9 is Figure 3 a partial sectional view of an implementation manner of the charging coil module at line B-B shown;

[0092] Figure 10 is Figure 3 a partial schematic structural diagram of an implementation manner of the charging coil module shown;

[0093] Figure 11 is Figure 10 a schematic structural diagram of a partial charging coil module shown from another angle;

[0094] Figure 12 is Figure 3 a preparation flow chart of the charging coil module shown;

[0095] Figures 13 to 23 isFigure 12 Schematic structure of some steps in the method for preparing the charging coil module shown in some embodiments Figures 1 to 11 ;

[0096] Figure 24 is a partial cross-sectional view of the charging coil module shown in this embodiment in another embodiment;

[0097] Figure 25 is a schematic structural diagram of an embodiment when the electronic device provided in the embodiment of the present application is in an unfolded state;

[0098] Figure 26 is Figure 25 a partial exploded view of an embodiment of the electronic device shown;

[0099] Figure 27 is Figure 25 a schematic structural diagram of an embodiment of the charging coil module shown;

[0100] Figure 28 is Figure 27 a partial cross-sectional view of an embodiment of the charging coil module shown along line G-G;

[0101] Figure 29 and Figure 30 is Figure 12 schematic structure of some steps in the method for preparing the charging coil module shown in other embodiments Figures 1 to 2 ;

[0102] Figure 31 is Figure 28 a preparation flow chart of an embodiment of the charging coil module shown;

[0103] Figure 32 is Figure 31 schematic structure of some steps in the method for preparing the charging coil module shown in some embodiments Figure 1 . Detailed implementation manners

[0104] The embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application.

[0105] In the description of the embodiments of the present application, it should be noted that unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. In addition, the integration of two components by an integral molding process means that during the process of forming one of the two components, the component is connected to the other component, and there is no need to connect the two components by means of reprocessing (such as bonding, welding, snap connection, screw connection).

[0106] In addition, the orientation terms mentioned in the embodiments of the present application, such as "left", "right", etc., are only with reference to the direction of the accompanying drawings. Therefore, the orientation terms used are for better and clearer description and understanding of the embodiments of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation on the embodiments of the present application. "Plurality" means at least two.

[0107] In the embodiments of the present application, the terms "first", "second", "third", and "fourth" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", "third", and "fourth" may explicitly or implicitly include one or more of such features.

[0108] In the embodiments of the present application, "and / or" is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after.

[0109] The reference to "an embodiment" or "some embodiments" etc. described in this specification means that in one or more embodiments of the present application, specific features, structures, or characteristics described in connection with that embodiment are included. Thus, the statements "in some embodiments", "in other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in another way. The terms "comprising", "having" and their variants mean "including but not limited to", unless otherwise specifically emphasized in another way.

[0110] It can be understood that the specific embodiments described herein are only used to explain the relevant invention and are not a limitation on the invention. Additionally, it should be noted that for ease of description, only parts related to the invention are shown in the drawings.

[0111] Figure 1 FIG. 2 is a schematic structural diagram of a wireless charging system 1000 provided by an embodiment of the present application. Figure 2 is Figure 1 FIG. 3 is a schematic structural diagram of an implementation manner of an electronic device 100 of the wireless charging system 1000 shown in FIG. 2.

[0112] As Figure 1 and Figure 2 shown in FIGS. 2 and 3, the wireless charging system 1000 may include an electronic device 100 and a wireless charger 200. When the wireless charger 200 is plugged into a power source, the wireless charger 200 can be used to wirelessly charge the electronic device 100. Figure 1 and Figure 2 Taking the electronic device 100 including a charging coil module 1 as an example for illustration. Among them, the electronic device 100 may be a mobile phone, a tablet computer, a folding terminal device, a wearable device, or other devices with a wireless charging function in other forms. The wearable device may be a smart bracelet, a smart watch, smart glasses, etc. Figure 1 and Figure 2 The electronic device 100 in the embodiment shown in FIGS. 2 and 3 is described by taking a mobile phone as an example.

[0113] In this embodiment, the electronic device 100 may be a straight phone (i.e., an electronic device that cannot be folded), or a folding phone (i.e., an electronic device that can be folded). The following will specifically introduce the electronic device 100 with these two structures in combination with relevant drawings. First, the electronic device 100 is described by taking it as a straight phone as an example.

[0114] As Figure 1 and Figure 2 shown in FIGS. 4 and 5, the electronic device 100 is a straight phone. The electronic device 100 may include a charging coil module 1, a display screen 2, a housing 3, and a load 4. The display screen 2 may be fixed to the housing 3. The display screen 2 and the housing 3 may enclose an internal space of the electronic device 100. The charging coil module 1 and the load 4 may both be located in the internal space of the electronic device 100. The load 4 may be a battery, a chip, a speaker, a camera, or other devices waiting to be charged. Figure 1 and Figure 2 Taking the load 4 as a battery for illustration.

[0115] It can be understood that Figure 1 and Figure 2 only some components of the electronic device 100 are schematically shown, and the actual shapes and actual sizes of these components are not limited by Figure 1 and the following respective drawings. In addition, since both the charging coil module 1 and the load 4 are internal devices of the electronic device 100, Figure 1 and Figure 2The charging coil module 1 and the load 4 are schematically shown by dashed lines. In other embodiments, when the electronic device 100 is in other forms, the electronic device 100 may not include the display screen 2.

[0116] As Figure 1 and Figure 2 shown, the charging coil module 1 can be electrically connected to the load 4. When the electronic device 100 is in the charging state, the charging coil module 1 can charge the load 4.

[0117] Figure 3 is Figure 2 a schematic structural diagram of one embodiment of the charging coil module 1 shown.

[0118] As Figure 3 shown, the charging coil module 1 may include a charging coil 10 and a circuit board 20. The charging coil 10 and the circuit board 20 are an integral structure. It can be understood that in this embodiment, while forming the structure of the charging coil 10, the circuit board 20 is formed together. In this way, compared with the solution of separately forming the charging coil 10 and the circuit board 20 and then electrically connecting the charging coil 10 and the circuit board 20 through a BTB, the solution of this embodiment can save the preparation steps of the charging coil module 1, thereby reducing the cost investment. In addition, this embodiment can eliminate the BTB, which can further save the device cost investment on the one hand and reduce the electrical connection path between the charging coil 10 and the circuit board 20 on the other hand, thereby reducing the loss.

[0119] It can be understood that the charging coil module 1 may further include more structures. For example, the charging coil module 1 may further include a system on chip (SOC) (not shown in the figure). The SOC can be integrated on the circuit board 20.

[0120] It should be noted that the circuit board can be the main board in the electronic device or the flexible board in the electronic device.

[0121] Figure 4 is Figure 3 a schematic structural diagram of one embodiment of the charging coil 10 shown. Figure 5 is Figure 4 a partial exploded view of one embodiment of the charging coil 10 shown.

[0122] As Figure 4 and Figure 5 shown, exemplarily, the charging coil 10 includes a substrate 11, a first coil 12, a second coil 13, a first insulating layer 14, a second insulating layer 15, a first nanocrystalline layer 16, and a first graphite layer 17.

[0123] In one embodiment, the material of the substrate 11 of the charging coil 10 may be an insulating material. Exemplarily, the substrate 11 of the charging coil 10 includes a three-layer structure, specifically including a first PI layer, an adhesive layer, and a second PI layer stacked in sequence. The adhesive layer uses a polymer-based insulating adhesive (booding sheet).

[0124] In one embodiment, the materials of the first coil 12 and the second coil 13 may both be metals. For example, the materials of the first coil 12 and the second coil 13 may both be copper.

[0125] In one embodiment, the first insulating layer 14 and the second insulating layer 15 of the charging coil 10 may be insulating materials. Exemplarily, both the first insulating layer 14 and the second insulating layer 15 of the charging coil 10 are two-layer structures, specifically including a PI layer and an adhesive layer.

[0126] As Figure 4 and Figure 5 shown, the substrate 11 of the charging coil 10 may include a first surface 111 and a second surface 112 disposed opposite to each other. The first coil 12 may be disposed on the first surface 111 of the substrate 11 of the charging coil 10. The second coil 13 may be disposed on the second surface 112 of the substrate 11 of the charging coil 10. In other words, the substrate 11 of the charging coil 10 is disposed between the first coil 12 and the second coil 13.

[0127] In addition, the first insulating layer 14 of the charging coil 10 may be disposed on the first coil 12 and cover the first coil 12. The first nanocrystalline layer 16 may be disposed on the side of the first insulating layer 14 away from the first coil 12. The first graphite layer 17 may be connected to the surface of the first nanocrystalline layer 16 away from the first insulating layer 14. Additionally, the second insulating layer 15 may be disposed on the second coil 13 and cover the second coil 13. The first insulating layer 14 of the charging coil 10 and the first coil 12 are on the same side of the substrate 11 of the charging coil 10. The second insulating layer 15 of the charging coil 10 and the second coil 13 are on the same side of the substrate 11 of the charging coil 10.

[0128] It can be understood that the first insulating layer 14 of the charging coil 10 can be used to protect the first coil 12. The second insulating layer 15 of the charging coil 10 can be used to protect the second coil 13.

[0129] It can be understood that the charging coil 10 may also include more or fewer structures. For example, the charging coil 10 may include more structures. The charging coil 10 may also include a second nanocrystalline layer and a second graphite layer. The second nanocrystalline layer and the second graphite layer are stacked on the second insulating layer 15 in sequence. Again, for example, the charging coil 10 may include fewer structures. The charging coil 10 may also not include the first nanocrystalline layer 16 and / or the first graphite layer 17, etc.

[0130] Figure 6 is Figure 4 A schematic structural diagram of the substrate 11, the first coil 12, and the second coil 13 shown in the figure. Figure 7 is Figure 6 A schematic structural diagram of an embodiment of the first coil 12 shown in the figure. Figure 8 is Figure 6 A partial sectional view of an embodiment of the structure shown in the figure along the line A-A.

[0131] As Figures 6 to 8 shown, the first coil 12 may include a first lead portion 121 and a first main body portion 122. The first lead portion 121 is connected to the output end of the first main body portion 122. It can be understood that, in Figure 6 this case, since the first coil 12 is located at the bottom of the second coil 13 and the second coil 13 blocks a part of the first coil 12, therefore, Figure 6 the first coil 12 is not shown.

[0132] Exemplarily, the first main body portion 122 includes a plurality of first sub-coils 1221 arranged at intervals and electrically connected to each other. It can be understood that one first sub-coil 1221 may form one turn of the first coil 12. The number of turns of the first coil 12 is greater than or equal to 2.

[0133] Exemplarily, one end of the first lead portion 121 may be electrically connected to the outermost first sub-coil 1221 among the plurality of first sub-coils 1221.

[0134] Exemplarily, the spacing D1 between two adjacent first sub-coils 1221, that is, the distance between two adjacent turns in the first coil 12, may be in the range of 40 micrometers to 100 micrometers. For example, the spacing between two adjacent first sub-coils 1221 may be 40 micrometers, 50 micrometers, 60 micrometers, 80 micrometers, or 100 micrometers. At this time, the wire spacing of the first coil 12 is relatively narrow. The first coil 12 can achieve a narrow spacing setting. It can be understood that a first gap 124 may be formed between two adjacent first sub-coils 1221. The spacing between two adjacent first sub-coils 1221 may be the minimum width of the first gap 124.

[0135] The following specifically introduces the structure of an embodiment of the first sub-coil 1221 in conjunction with the relevant drawings.

[0136] As Figures 6 to 8As shown, the first sub-coil 1221 may include a first conductive portion 1222 and a second conductive portion 1223. Among them, the first conductive portion 1222 is provided on the first surface 111 of the substrate 11. The second conductive portion 1223 is wrapped around the outer surface of the first conductive portion 1222. Exemplarily, the second conductive portion 1223 may be formed on the first conductive portion 1222 through an electroplating process.

[0137] In some embodiments, the second conductive portion 1223 is formed on the first conductive portion 1222 of the first coil 12 by lead electroplating.

[0138] It can be understood that the spacing D1 between two adjacent first sub-coils 1221 is the spacing between the second conductive portions 1223 of two adjacent first sub-coils 1221. The space between the second conductive portions 1223 of two adjacent first sub-coils 1221 is the first gap 124.

[0139] In some embodiments, the first conductive portion 1222 of the first sub-coil 1221 further includes two layers of metal. Among them, the second layer of metal is formed on the first layer of metal by electroplating, and the first layer of metal is disposed on the substrate 11 of the charging coil 10.

[0140] As Figure 6 and Figure 8 shown, the second coil 13 may include a second lead portion 131 and a second main body portion 132. The second lead portion 131 is connected to the output end of the second main body portion 132.

[0141] Exemplarily, the second main body portion 132 includes a plurality of second sub-coils 1321 arranged at intervals and are electrically connected to each other. It can be understood that one second sub-coil 1321 may form one turn of the second coil 13. The number of turns of the second coil 13 is greater than or equal to 2.

[0142] Exemplarily, one end of the second lead portion 131 may be electrically connected to the outermost second sub-coil 1321 among the plurality of second sub-coils 1321.

[0143] Exemplarily, the spacing D2 between two adjacent second sub-coils 1321, that is, the distance between two adjacent turns in the second coil 13, may be in the range of 40 microns to 100 microns. For example, the spacing between two adjacent second sub-coils 1321 may be 40 microns, 50 microns, 60 microns, 80 microns or 100 microns. At this time, the wire spacing of the second coil 13 is relatively narrow. The second coil 13 can achieve a narrow spacing setting. It can be understood that a second gap 134 may be formed between two adjacent second sub-coils 1321. The spacing between two adjacent second sub-coils 1321 may be the minimum width of the second gap 134.

[0144] The following specifically introduces the structure of an implementation manner of the second sub-coil 1321 in combination with relevant attached drawings.

[0145] As Figures 6 to 8 shown, the second sub-coil 1321 may include a first conductive portion 1322 and a second conductive portion 1323. Among them, the first conductive portion 1322 is disposed on the second surface 112 of the substrate 11. The second conductive portion 1323 is wrapped around the outer surface of the first conductive portion 1322. Exemplarily, the second conductive portion 1323 may be formed on the first conductive portion 1322 by an electroplating process.

[0146] In some implementation manners, the second conductive portion 1323 is formed on the first conductive portion 1322 of the second coil 13 by wire electroplating.

[0147] It can be understood that the distance D2 between two adjacent second sub-coils 1321 is the distance between the second conductive portions 1323 of two adjacent second sub-coils 1321. The space between the second conductive portions 1323 of two adjacent second sub-coils 1321 is the second gap 134.

[0148] In some implementation manners, the first conductive portion 1322 of the second sub-coil 1321 further includes two layers of metal. Among them, the second layer of metal is formed on the first layer of metal by electroplating, and the first layer of metal is disposed on the substrate 11 of the charging coil 10.

[0149] It can be understood that the second coil 13 and the first coil 12 may have the same or similar structures, symmetric or partially symmetric structures, or different structures. In this implementation manner, the second coil 13 and the first coil 12 are symmetric structures. For the basic design of the component structure of the second coil 13, the design of the connection relationship between components, and the design of the connection relationship between components and other structures outside the component, the relevant solutions of the first coil 12 can be referred to. At the same time, it is allowed that there are some differences in the detailed structure or position arrangement of the components between the second coil 13 and the first coil 12. For example,

[0150] Exemplarily, the charging coil 10 may further include a plurality of vias (not shown in the figure). The plurality of vias can all penetrate the first surface 111 and the second surface 112 of the substrate 11 of the charging coil 10. The plurality of first sub-coils 1221 in the first coil 12 can be electrically connected to the plurality of second sub-coils 1321 of the second coil 13 one by one through the plurality of vias 14, so as to realize the electrical connection between the internal traces of the entire charging coil 10.

[0151] It can be understood that both the first coil 12 and the second coil 13 in the charging coil 10 can be set with a narrow pitch. Under the condition of the same size, compared with the charging coil without the narrow pitch setting, the charging coil 10 in this embodiment has a higher content of metal (such as copper) per unit area, thereby effectively reducing the charging loss, which is beneficial to extending the time for the charging coil 10 to maintain the 50W peak value during the charging process and improving the charging efficiency.

[0152] In addition, under the condition that the outer diameter of the charging coil 10 is the same, compared with the charging coil module without the narrow pitch setting, in the charging coil 10 of this embodiment, both the first coil 12 and the second coil 13 can be set with a narrow pitch without reducing the volume of the traces in the first coil 12 and the second coil 13, so as to reduce the thickness of the first coil 12 and / or the second coil 13, and thus reduce the overall thickness of the charging coil 10. In other words, the charging coil 10 of this embodiment can realize the miniaturization setting of the charging coil 10 by reducing the distance between two adjacent turns in the first coil 12 and the second coil 13.

[0153] Figure 9 Yes Figure 3 It is a partial cross-sectional view of an embodiment of the charging coil module 1 at the B-B line as shown.

[0154] As Figure 9 As shown, the circuit board 20 includes a substrate 21, a first trace layer 22, a second trace layer 23, a first insulating layer 24, and a second insulating layer 25. It can be understood that the circuit board 20 may also include more or fewer structures. For example, the circuit board 20 may include more structures. The circuit board 20 may also include a plurality of insulating layers and a plurality of trace layers. The plurality of insulating layers and the plurality of trace layers may be alternately stacked on the first trace layer 22 and / or the second trace layer 23. For another example, the circuit board 20 may include fewer structures. The circuit board 20 may also not include the first insulating layer 24 and / or the second insulating layer 25 of the circuit board 20.

[0155] In one embodiment, the material of the substrate 21 of the circuit board 20 may be an insulating material. Exemplarily, the substrate 21 of the circuit board 20 includes a three-layer structure, specifically including a first PI layer, an adhesive layer, and a second PI layer stacked in sequence. The adhesive layer uses a polymer-based insulating adhesive (booding sheet).

[0156] In one embodiment, the materials of both the first trace layer 22 and the second trace layer 23 may be metal. For example, the materials of both the first trace layer 22 and the second trace layer 23 may be copper.

[0157] In one embodiment, the first insulating layer 24 and the second insulating layer 25 of the circuit board 20 may be insulating materials. Exemplarily, both the first insulating layer 24 and the second insulating layer 25 of the circuit board 20 are two-layer structures, specifically including a PI layer and an adhesive layer.

[0158] As Figure 9 shown, the substrate 21 of the circuit board 20 may include a first surface 211 and a second surface 212 that are disposed opposite to each other. The first wiring layer 22 may be disposed on the first surface 211 of the substrate 21 of the circuit board 20. The second wiring layer 23 may be disposed on the second surface 212 of the substrate 21 of the circuit board 20. In other words, the substrate 21 of the circuit board 20 is located between the first wiring layer 22 and the second wiring layer 23.

[0159] In addition, the first insulating layer 24 of the circuit board 20 may be disposed on the first wiring layer 22 and cover the first wiring layer 22. The second insulating layer 25 of the circuit board 20 may be disposed on the second wiring layer 23 and cover the second wiring layer 23. The first insulating layer 24 of the circuit board 20 may be used to protect the first wiring layer 22. The second insulating layer 25 of the circuit board 20 may be used to protect the second wiring layer 23.

[0160] It can be understood that the first wiring layer 22 of the circuit board 20 may be composed of multiple wirings. Among them, two adjacent wirings are spaced apart. In this way, when the first insulating layer 24 of the circuit board 20 is disposed on the first wiring layer 22 and covers the first wiring layer 22, the first insulating layer 24 of the circuit board 20 can be filled in the gap between two adjacent wirings. Similarly, the arrangement of the second wiring layer 23 of the circuit board 20 can also refer to the arrangement of the first wiring layer 22 of the circuit board 20.

[0161] Figure 10 is Figure 3 a partial structural schematic diagram of one embodiment of the charging coil module 1 shown in Figure 11 is Figure 10 a structural schematic diagram of a partial charging coil module 1 shown in another angle.

[0162] As Figure 10 and Figure 11As shown, the first trace layer 22 includes a first trace 221. The second trace layer 23 includes a second trace 231. Among them, the first trace 221 of the first trace layer 22 and the first lead portion 121 of the first coil 12 are of an integrally formed structure. The second trace 231 of the second trace layer 23 and the second lead portion 131 of the second coil 13 are of an integrally formed structure. In this way, one end of the first trace 221 is electrically connected to the first lead portion 121 of the first coil 12, and the other end is electrically connected to the BTB connector 61. One end of the second trace 231 is electrically connected to the second lead portion 131 of the second coil 13, and the other end is electrically connected to the BTB connector 61. At this time, the BTB connector 61 can be electrically connected to the load 4 through other circuit boards. It can be understood that the first coil 12 and the second coil 13 can be directly electrically connected to the first trace 221 and the second trace 231 of the circuit board 20, thereby greatly shortening the charging path between the charging coil 10 and the load 4 to be charged, and further reducing the link loss.

[0163] It can be understood that the position of the BTB connector 61 is not limited to Figure 10 and Figure 11 the position shown. The BTB connector 61 can be set at any position on the circuit board 20. Specifically, it can be flexibly set according to requirements. In addition, the position of the load 4 can also be directly set on the circuit board 20. At this time, the circuit board 20 can be the main board of the electronic device 100.

[0164] In other embodiments, the first coil 12 may not be electrically connected to the BTB connector 61 through the first trace 221. For example, when the circuit board 20 includes more trace layers, the first coil 12 can also be electrically connected to the BTB connector 61 through the traces of other trace layers and the vias of the circuit board 20. Similarly, the second coil 13 may not be electrically connected to the BTB connector 61 through the second trace 231. For example, when the circuit board 20 includes more trace layers, the second coil 13 can also be electrically connected to the BTB connector 61 through the traces of other trace layers and the vias of the circuit board 20.

[0165] In one embodiment, the first trace layer 22 may further include a third trace 222. Exemplarily, the third trace 222 can be electrically connected between two electronic devices for mutually transmitting electrical signals between the two electronic devices. Exemplarily, the third trace 222 can also be used to provide a wired power supply path for the load 4.

[0166] In one embodiment, the line width of the third trace 222 can be greater than or equal to 40 microns. Exemplarily, the line width of the third trace 222 is equal to 40 microns.

[0167] In other embodiments, the first trace layer 22 may not include the third trace 222.

[0168] In one embodiment, the second wiring layer 23 includes a fourth wiring 232. The fourth wiring 232 and the third wiring 222 may be arranged similarly or identically. Details are not elaborated here.

[0169] As Figure 8 and Figure 9 shown, the substrate 21 of the circuit board 20 and the substrate 11 of the charging coil 10 are arranged on the same layer and are of an integrally formed structure. The substrate 21 of the circuit board 20 and the substrate 11 of the charging coil 10 can be formed through the same step. Exemplarily, the first PI layer of the substrate 11 of the charging coil 10 and the first PI layer of the substrate 21 of the circuit board 20 are arranged on the same layer and are of an integrally formed structure. The adhesive layer of the substrate 11 of the charging coil 10 and the adhesive layer of the substrate 21 of the circuit board 20 are arranged on the same layer and are of an integrally formed structure. The second PI layer of the substrate 11 of the charging coil 10 and the second PI layer of the substrate 21 of the circuit board 20 are arranged on the same layer and are of an integrally formed structure.

[0170] As Figure 8 and Figure 9 shown, the first wiring layer 22 of the circuit board 20 and the first coil 12 of the charging coil 10 can be arranged on the same layer. At this time, the first wiring layer 22 of the circuit board 20 and the first coil 12 of the charging coil 10 can be formed through the same process step. Among them, the first wiring 221 of the first wiring layer 22 and the first lead portion 121 of the first coil 12 of the charging coil 10 are of an integrally formed structure.

[0171] As Figure 8 and Figure 9 shown, the second wiring layer 23 of the circuit board 20 and the second coil 13 of the charging coil 10 can be arranged on the same layer. At this time, the second wiring layer 23 of the circuit board 20 and the second coil 13 of the charging coil 10 can be formed through the same process step. Among them, the second wiring 231 of the second wiring layer 23 and the second lead portion 131 of the second coil 13 are of an integrally formed structure.

[0172] As Figure 9 and Figure 4 shown, the first insulating layer 24 of the circuit board 20 and the first insulating layer 14 of the charging coil 10 can be arranged on the same layer. The first insulating layer 24 of the circuit board 20 and the first insulating layer 14 of the charging coil 10 are of an integrally formed structure. At this time, the first insulating layer 24 of the circuit board 20 and the first insulating layer 14 of the charging coil 10 can be formed through the same process step.

[0173] As Figure 9 and Figure 4As shown, the second insulating layer 25 of the circuit board 20 and the second insulating layer 15 of the charging coil 10 can be arranged on the same layer. The second insulating layer 25 of the circuit board 20 and the second insulating layer 15 of the charging coil 10 are of an integrally formed structure. At this time, the second insulating layer 25 of the circuit board 20 and the second insulating layer 15 of the charging coil 10 can be formed through the same process step.

[0174] It can be understood that by arranging the substrate 21 of the circuit board 20 and the substrate 11 of the charging coil 10 on the same layer, the first wiring layer 22 and the first coil 12 on the same layer, and the second wiring layer 23 and the second coil 13 on the same layer, the charging coil 10 and the circuit board 20 form a structure with relatively strong integrity, and the structural strength of the charging coil module 1 is better. In this way, compared with the scheme of stacking the charging coil 10 on the circuit board 20, there is an overlapping area in the thickness direction between the charging coil 10 and the circuit board 20 in this embodiment, and the thickness of the charging coil module 1 can be reduced to a large extent.

[0175] It can be understood that compared with the scheme of separately preparing the charging coil 10 and the circuit board 20 and then connecting the charging coil 10 to the circuit board 20 through a BTB connector, in this embodiment, the circuit board 20 can be prepared together while preparing the charging coil 10, or the charging coil 10 can be prepared together while preparing the circuit board 20. On the one hand, this can save a process of preparing the charging coil 10 or the circuit board 20, thereby reducing the cost investment of the charging coil module 1; on the other hand, the charging coil 10 and the circuit board 20 are set as an integral structure, which can save the assembly steps of the charging coil module 1 and reduce the preparation difficulty of the charging coil module 1.

[0176] In addition, compared with the first coil 12 and the second coil 13 being electrically connected to the circuit board 20 through a BTB connector, the first coil 12 and the second coil 13 in this embodiment can be directly electrically connected to the traces on the circuit board 20 (such as the traces on the first wiring layer 22 or the second wiring layer 23 of the circuit board 20). On the one hand, this can shorten the charging path between the charging coil 10 and the load 4, thereby reducing the link loss. On the other hand, it can save the BTB connector, simplify the structure of the charging coil module 1, and reduce the cost investment of the charging coil module 1.

[0177] It can be understood that the first insulating layer 14 of the charging coil 10 and the first insulating layer 24 of the circuit board 20 are arranged on the same layer. In this way, the first insulating layer 24 of the circuit board 20 can be prepared simultaneously when preparing the first insulating layer 14 of the charging coil 10, or the first insulating layer 14 of the charging coil 10 can be prepared simultaneously when preparing the first insulating layer 24 of the circuit board 20. On the one hand, this can save a process of preparing the first insulating layer 14 of the charging coil 10 or the first insulating layer 24 of the circuit board 20, thereby reducing the cost input of the charging coil module 1.

[0178] It can be understood that while the charging coil module 1 achieves higher wireless charging efficiency by reducing link loss, the first coil 12 and the second coil 13 in the charging coil 10 can be arranged with a narrow pitch. Under the condition of the same size, compared with the charging coil 10 without the narrow pitch arrangement, the charging coil 10 in this embodiment has a higher metal (such as copper) content per unit area, thereby effectively reducing the charging loss, which is beneficial to extending the time for the charging coil 10 to maintain a 50W peak during charging and improving the charging efficiency.

[0179] It can be understood that while the charging coil module 1 achieves higher wireless charging efficiency by reducing link loss, the first coil 12 and the second coil 13 in the charging coil 10 can be arranged with a narrow pitch and at the same time, be arranged with a high thickness (such as a thickness greater than 40 microns) and a high line width (such as a line width greater than 40 microns). This is beneficial to reducing the impedance of the charging path. Exemplarily, compared with the charging impedance of the traditional charging coil module (such as 45.2 ohm), the charging coil module 1 in this embodiment can be reduced to 25.6 ohm, which is reduced by nearly 43%. In addition, the heat dissipation ability of the charging coil module 1 can also be improved.

[0180] The specific structure of the charging coil module 1 of the present application is specifically introduced above. The preparation process of the charging coil module 1 will be specifically introduced below with reference to the drawings.

[0181] Figure 12 is Figure 3 The preparation flow chart of the charging coil module 1 shown. Figures 13 to 23 is Figure 12 The structural schematic of some steps in the method for preparing the charging coil module 1 shown in some embodiments Figures 1 to 11 . Among them, Figure 15 is Figure 14 The partial cross-sectional view of an embodiment of the double-sided board 30 at the C-C line shown. Figure 19 is Figure 18 The partial cross-sectional view of an embodiment of the structural member at the C-C line shown. Figure 20 is Figure 19Partial cross-sectional view of the second conductive portion 1223 formed on the first conductive portion 1222 shown. Figure 23 is Figure 21 Partial cross-sectional view of the first nanocrystalline layer 16 and the first graphite layer 17 formed on the first insulating layer 14 shown.

[0182] The preparation process of the charging coil module 1 is not limited to including steps S110 - S160 as Figure 12 shown:

[0183] S110: Prepare the double-sided board 30. As Figures 13 to 15 shown, the double-sided board 30 includes a substrate 31, a first etching layer 32, and a second etching layer 33. The first etching layer 32 and the second etching layer 33 are respectively disposed on the first surface 311 and the second surface 312 of the substrate 31. The first surface 311 and the second surface 312 of the substrate 31 of the double-sided board 30 are disposed opposite to each other. The substrate 31 of the double-sided board 30 is formed as the substrate 11 of the charging coil 10 (please refer to Figure 8 ) and the substrate 21 of the circuit board 20 (please refer to Figure 9 ).

[0184] Exemplarily, in the step of preparing the double-sided board 30, step S110 further includes:

[0185] Bond the first substrate 341 of the first flexible copper clad laminate 34 (FCCL) and the second substrate 351 of the second flexible copper clad laminate 35 to two surfaces of the adhesive sheet 36. Among them, the first flexible copper clad laminate 34 includes a first substrate 341 and a first metal layer 342. The first metal layer 342 is disposed on the first surface 3411 of the first substrate 341. The second flexible copper clad laminate 35 includes a second substrate 351 and a second metal layer 352. The second metal layer 352 is disposed on the first surface 3511 of the second substrate 351. Bond the second surface 3412 of the first substrate 341 and the second surface 3512 of the second substrate 351 to two surfaces of the adhesive sheet 36.

[0186] Exemplarily, the materials of the first substrate 341 and the second substrate 351 can both be insulating materials such as polyester film or polyimide (PI). The materials of the first metal layer 342 and the second metal layer 352 can both be copper.

[0187] Exemplarily, the weight of the first metal layer 342 of the first flexible copper clad laminate 34 can be one-third ounce (oz). The weight of the second metal layer 352 of the second flexible copper clad laminate 35 can be one-third ounce (oz).

[0188] Exemplarily, in the Z-axis direction, the thickness of the first substrate 341 of the first flexible copper clad laminate 34 is less than or equal to 12.5 micrometers. The thickness of the second substrate 351 of the second flexible copper clad laminate 35 is less than or equal to 12.5 micrometers.

[0189] Exemplarily, the material of the adhesive sheet 36 can be a sticky polymer material.

[0190] Exemplarily, in the Z-axis direction, the thickness of the adhesive sheet is less than or equal to 15 micrometers.

[0191] Press the first flexible copper clad laminate 34, the adhesive sheet 36, and the second flexible copper clad laminate 35 together to form a double-sided board 30.

[0192] In one embodiment, processes such as hot pressing, transfer pressing, quick pressing, or vacuum pressing can be used to press the first flexible copper clad laminate 34, the adhesive sheet 36, and the second flexible copper clad laminate 35 into one piece, thereby forming a double-sided board 30 with a firm and stable structure.

[0193] It can be understood that the first substrate 341 of the first flexible copper clad laminate 34, the adhesive sheet 36, and the second substrate 351 of the second flexible copper clad laminate 35 constitute the substrate 31 of the double-sided board 30, that is, the substrate 11 of the charging coil 10 and the substrate 21 of the circuit board 20.

[0194] Exemplarily, the first substrate 341 of the first flexible copper clad laminate 34 can constitute the first PI layer of the substrate 11 of the charging coil 10 and the first PI layer of the substrate 21 of the circuit board 20. The adhesive sheet 36 can constitute the adhesive layer of the substrate 11 of the charging coil 10 and the adhesive layer of the substrate 21 of the circuit board 20. The second substrate 351 of the second flexible copper clad laminate 35 can constitute the second PI layer of the substrate 11 of the charging coil 10 and the second PI layer of the substrate 21 of the circuit board 20.

[0195] It can be understood that the first metal layer 342 of the first flexible copper clad laminate 34 constitutes the first etching layer 32 of the double-sided board 30. The second metal layer 352 of the second flexible copper clad laminate 35 constitutes the second etching layer 33 of the double-sided board 30.

[0196] Exemplarily, in the step of preparing the double-sided board 30, step S110 further includes drilling the double-sided board 30 to form a plurality of vias. Each via can penetrate from the first metal layer 342 of the first flexible copper clad laminate 34 to the second metal layer 352 of the second flexible copper clad laminate 35. The vias can be used to electrically connect the first metal layer 342 of the first flexible copper clad laminate 34 and the second metal layer 352 of the second flexible copper clad laminate 35.

[0197] Exemplarily, in the step of preparing the double-sided panel 30, step S110 further includes operations such as pre-treating and micro-etching the double-sided panel 30 to facilitate subsequent preparation. For example, the pre-treatment can be removing contaminants on the first metal layer 342 and the second metal layer 352 using a brush wheel to increase the surface roughness of the first metal layer 342 and the second metal layer 352. The micro-etching can be using chemical corrosion to increase the surface roughness of the first metal layer 342 and the second metal layer 352.

[0198] As Figure 14 and Figure 15 shown, exemplarily, in the step of preparing the double-sided panel 30, step S110 further includes: electroplating to form a third metal layer 343 on the first metal layer 342 of the first flexible copper clad laminate 34, and the first metal layer 342 and the third metal layer 343 constitute the first etching layer 32; and / or, electroplating to form a fourth metal layer 353 on the second metal layer 352 of the second flexible copper clad laminate 35, and the second metal layer 352 and the fourth metal layer 353 constitute the second etching layer 33.

[0199] It can be understood that through the electroplating process, a third metal layer 343 is electroplated on the first metal layer 342 of the first flexible copper clad laminate 34, thereby increasing the thickness of the first metal layer 342 to meet the thickness requirements for etching, and further facilitating the operation of subsequent processes.

[0200] It can be understood that through the electroplating process, a fourth metal layer 353 is electroplated on the second metal layer 352 of the second flexible copper clad laminate 35, thereby increasing the thickness of the second metal layer 352 to meet the thickness requirements for etching, and further facilitating the operation of subsequent processes.

[0201] Exemplarily, in the Z-axis direction, the thickness of the first etching layer 32 can be in the range of 10 microns to 60 microns. For example, the thickness of the first etching layer 32 can be 10 microns, 20 microns, 25 microns, 30 microns, 42 microns, or 60 microns.

[0202] Exemplarily, in the Z-axis direction, the thickness of the second etching layer 33 is in the range of 10 microns to 60 microns. For example, the thickness of the second etching layer 33 can be 10 microns, 20 microns, 25 microns, 30 microns, 42 microns, or 60 microns.

[0203] S120: Processing the first etching layer 32 of the double-sided panel 30 to form the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20; As Figure 10 shown, the first coil 12 includes a first lead portion 121. The first wiring layer 22 includes a first wiring 221. The first lead portion 121 and the first wiring 221 are an integrally formed structure.

[0204] As Figures 16 to 19As shown, exemplarily, in the step of processing the first etching layer 32 of the double-sided panel 30, the S120 step includes processes such as film pasting, exposure, development, etching, and film stripping. For example, the film pasting process may be pasting a first photoresist layer 51 on the first etching layer 32 of the double-sided panel 30. The exposure process may be that the light source 52 exposes the first etching layer 32 through the mask plate 53. In this way, a first pattern 511 and a second pattern 512 are formed on the first photoresist layer 51. Among them, the first pattern 511 is irradiated by light. The second pattern 512 is not irradiated by light. In addition, the first pattern 511 is a pattern having the first coil 12 and the first wiring layer 22. The development process may be washing away the first pattern 511 or the second pattern 512 with a developer. It can be understood that whether the developer washes away the first pattern 511 or the second pattern 512 depends on the material and structure of the first photoresist layer 51. Specifically, it can be selected according to requirements. In this embodiment, the case where the developer washes away the second pattern 512 is taken as an example for description. The etching process may adopt a plasma etching process. Specifically, the part of the first etching layer 32 exposed relative to the first photoresist layer 51 is etched, that is, the part of the first etching layer 32 opposite to the second pattern 512 is etched, so that the part of the first etching layer 32 opposite to the first pattern 511 remains after etching. The film stripping process may be removing the first pattern 511 of the first etching layer 32 to expose the part of the first etching layer 32 opposite to the first pattern 511. For example, the first pattern 511 of the first photoresist layer 51 can be removed by a stripping liquid to expose the part of the first etching layer 32 opposite to the first pattern 511. It can be understood that the remaining part of the first etching layer 32 can form the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20. In this embodiment, since an electroplating process is also performed after film stripping, after processes such as film pasting, exposure, development, etching, and film stripping, the remaining part of the first etching layer 32 can form the first conductive part 1222 of the first coil 12 of the charging coil 10 and a part of the first wiring layer 22 of the circuit board 20.

[0205] As Figure 19 shown, a third gap 125 is formed in the space between the first conductive parts 1222 of two adjacent first coils 12. The spacing D3 between the first conductive parts 1222 of two adjacent first coils 12 may be the minimum width of the third gap 125. Exemplarily, the spacing D3 between the first conductive parts 1222 of two adjacent first coils 12 may be in the range of 60 micrometers to 100 micrometers. In one embodiment, the spacing D3 between the first conductive parts 1222 of two adjacent first coils 12 may be 80 micrometers.

[0206] It can be understood that when etching the first etching layer 32 of the double-sided board 30 through processes such as film pasting, exposure, development, etching, and film stripping, the thicker the metal thickness to be etched, the greater the side etching generated during the etching process, and the wider the width of the finally formed gap (i.e., the first gap). In this embodiment, by etching the first etching layer 32 with a relatively thin thickness, the generation of side etching is effectively reduced, the width of the formed gap is narrowed, and it is beneficial to control the etching quality of the first coil 12. At the same time, the thinner the etched metal thickness, the shorter the etching time required, which is beneficial to improving production efficiency.

[0207] In other embodiments, the first etching layer 32 with a relatively thick thickness can also be etched. The width of the third gap 125 formed after etching can be in the range of 100 micrometers to 130 micrometers. In one embodiment, the width of the third gap 125 can be 120 micrometers.

[0208] As Figure 20 shown, exemplarily, in the step of processing the first etching layer 32 of the double-sided board 30, the S120 step further includes an electroplating process. For example, the electroplating process can be electroplating on the first conductive part 1222 of the first coil 12 of the charging coil 10 to form the second conductive part 1223 of the first coil 12. For example, the electroplating process can be lead electroplating.

[0209] It can be understood that the space between the second conductive parts 1223 of two adjacent first coils 12 forms the first gap 124. The distance D1 between the second conductive parts 1223 of two adjacent first coils 12 can be the minimum width of the first gap 124.

[0210] Exemplarily, the distance D1 between the second conductive parts 1223 of two adjacent first coils 12 can be in the range of 40 micrometers to 60 micrometers. At this time, the width of the first gap 124 formed by the first coil 12 is relatively narrow. In one embodiment, the distance D1 between the second conductive parts 1223 of two adjacent first coils 12 can be 55 micrometers.

[0211] It can be understood that by electroplating on the first conductive part 1222 of the first coil 12 of the charging coil 10 to form the second conductive part 1223 of the first coil 12, the width of the third gap D3 is reduced, that is, a first gap D1 with a smaller width is formed. In this way, compared with the scheme of directly etching the circuit of the charging coil 10, the first coil 12 of the charging coil 10 in this embodiment can significantly reduce the distance between two adjacent first conductive parts 1222 through electroplating to obtain the first coil 12 of the charging coil 10 with a narrow pitch setting.

[0212] It can be understood that under the condition that the outer diameter of the first coil 12 of the charging coil 10 is the same, compared with the charging coil without the narrow-spacing setting, the first coil 12 of the charging coil 10 in this embodiment can reduce the thickness of the first coil 12 by reducing the width of the third gap D3 of the first coil 12 without reducing the volume of the circuit of the first coil 12, so as to reduce the overall thickness of the charging coil 10, which is beneficial to realizing the thin-type setting of the charging coil 10.

[0213] In addition, under the condition that the sizes of the charging coils 10 are the same, compared with the charging coils without the narrow-spacing setting, the content of metal (such as copper) per unit area of the charging coil 10 in this embodiment is higher, and the volume of the traces in the charging coil 10 can be larger, so that the charging loss can be reduced, which is beneficial to extending the time for the charging coil 10 to maintain a 50W peak value during the charging process and improving the charging efficiency.

[0214] As Figures 14 to 20 shown, in this embodiment, in step S110, through the electroplating process, a third metal layer 343 is electroplated on the first metal layer 342 of the first flexible copper clad laminate 34, so as to increase the thickness of the first metal layer 342, that is, the thickness of the first etching layer 32 formed by the first metal layer 342 and the third metal layer 343 is relatively thick. Thus, after the first conductive portion 1222 of the first coil 12 is formed by processing the first etching layer 32, since the thickness of the first etching layer 32 remains unchanged during the processing, the thickness of the first conductive portion 1222 of the first coil 12 formed by processing also remains unchanged. In this way, the thickness of the first conductive portion 1222 of the first coil 12 formed by processing is also relatively thick. At this time, when the second conductive portion 1223 of the first coil 12 is electroplated on the first conductive portion 1222 of the first coil 12 of the charging coil 10, the thickness of the second conductive portion 1223 of the first coil 12 does not need to be electroplated too thick. It can be understood that when the second conductive portion 1223 of the first coil 12 is electroplated, for every 20 microns of metal thickness formed, the thickness tolerance generated during its preparation process is about ±8 microns. In this embodiment, by directly electroplating the first conductive portion 1222 of the first coil 12 with a relatively thick thickness, the thickness error generated during the second electroplating process can be reduced, so that the thickness of the second conductive portion 1023 of the first coil 12 formed is more uniform.

[0215] It can be understood that although the above electroplating process is for electroplating the first coil 12 of the charging coil 10, in other embodiments, the first trace layer 22 of the circuit board 20 can also be electroplated to make the content of metal (such as copper) per unit area of the first trace layer 22 of the circuit board 20 higher, and the volume of the traces in the first trace layer 22 of the circuit board 20 can be larger, so that the charging loss can be reduced.

[0216] In other embodiments, in the step of processing the first etching layer 32 of the double-sided board 30, the S120 step may not include the electroplating process. At this time, after the first etching layer 32 of the double-sided board 30 undergoes processes such as film pasting, exposure, development, etching, and film stripping, the remaining part of the first etching layer 32 directly forms the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20. Details are not elaborated here.

[0217] S130: Process the second etching layer 33 of the double-sided board 30 to form the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20; as Figure 11 shown, the second coil 13 includes a second lead portion 131. The second wiring layer 23 includes a second wiring 231. The second lead portion 131 and the second wiring 231 are an integrally formed structure.

[0218] Exemplarily, in the step of processing the second etching layer 33 of the double-sided board 30, the S130 step includes film pasting, exposure, development, etching, and film stripping. For the processes of film pasting, exposure, development, etching, and film stripping, reference can be made to those in S120. Details are not elaborated here.

[0219] Exemplarily, in the step of processing the second etching layer 33 of the double-sided board 30, the S130 step may further include the electroplating process. For the electroplating process, reference can also be made to the electroplating process in S120. Details are not elaborated here.

[0220] It can be understood that the electroplating process in the S130 step can be carried out simultaneously with the electroplating process in the S120 step.

[0221] S140: Form a first covering layer 41 on the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20, and form a second covering layer 42 on the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20. As Figure 21 and Figure 22 shown, the first covering layer 41 covers the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20. The second covering layer 42 covers the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20. It can be understood that the first covering layer 41 is formed as the first insulating layer 14 of the charging coil 10 and the first insulating layer 24 of the circuit board 20. The second covering layer 42 is formed as the second insulating layer 15 of the charging coil 10 and the second insulating layer 25 of the circuit board 20.

[0222] It can be understood that since the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20 are covered by the first covering layer 41, and the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20 are covered by the second covering layer 42,Figure 21 The first coil 12 of the charging coil 10, the first trace layer 22 of the circuit board 20, the second coil 13 of the charging coil 10, and the second trace layer 23 of the circuit board 20 are schematically shown by dashed lines.

[0223] Exemplarily, the material of the first covering layer 41 is an insulating material. The first covering layer 41 has a two-layer structure. The first layer of the first covering layer 41 may be PI. The second layer of the first covering layer 41 may be an adhesive (AD). The second layer of the first covering layer 41 is adhered to the first coil 12 of the charging coil 10 and the first trace layer 22 of the circuit board 20. The first covering layer 41 is used to protect the first coil 12 of the charging coil 10 and the first trace layer 22 of the circuit board 20.

[0224] Exemplarily, the material of the second covering layer 42 is an insulating material. The second covering layer 42 has a two-layer structure. The first layer of the second covering layer 42 may be PI. The second layer of the second covering layer 42 may be an adhesive (AD). The second layer of the second covering layer 42 is adhered to the second coil 13 of the charging coil 10 and the second trace layer 23 of the circuit board 20. The second covering layer 42 is used to protect the second coil 13 of the charging coil 10 and the second trace layer 23 of the circuit board 20.

[0225] Exemplarily, the color of the first covering layer 41 and / or the second covering layer 42 may be black.

[0226] Exemplarily, after the step of forming the first covering layer 41 on the first coil 12 of the charging coil 10 and the first trace layer 22 of the circuit board 20, and forming the second covering layer 42 on the second coil 13 of the charging coil 10 and the second trace layer 23 of the circuit board 20, the first covering layer 41 and / or the second covering layer 42 is pressed.

[0227] In one embodiment, processes such as hot pressing, transfer pressing, quick pressing, or vacuum pressing can be used to press the first covering layer 41 and / or the second covering layer 42, thereby forming a structurally firm and stable charging coil module 1.

[0228] S150: Form a first nanocrystalline layer 16 on the first insulating layer 14 of the charging coil 10.

[0229] Exemplarily, the first nanocrystalline layer 16 can be adhered to the first insulating layer 14 of the charging coil 10 through an adhesive layer. The adhesive layer can be a double-sided adhesive;

[0230] S160: Form a first graphite layer 17 on the first nanocrystalline layer 16.

[0231] Exemplarily, the first graphite layer 17 can be connected to the surface of the first nanocrystalline layer 16 away from the first insulating layer 14 by means of adhesive pressing.

[0232] It can be understood that before preparing the charging coil module 1 by the preparation method of this embodiment, the target parameters such as the structure and material of the charging coil module 1 can be input into the electrical simulation software first, and the electromagnetic field can be added for single simulation to obtain the simulated DC impedance of the charging coil module 1. Then, according to the obtained simulation values, parameters such as the wire spacing of the first coil 12, the wire spacing of the second coil 1313, the thickness of the first nanocrystalline layer 16, and the thickness of the first graphite layer 17 in the charging coil module 1 are adjusted so that the adjusted charging coil module 1 can meet the design requirements. Exemplarily, the simulated DC impedance of the charging coil module 1 can be 98.7 mΩ. And the DC impedance of the charging coil module 1 that meets the design requirements of 3.49 μH inductance and 50 W power is less than or equal to 100 mΩ. In other words, the charging coil module 1 prepared by the preparation method of the present application can meet the general design requirements.

[0233] It can be understood that both the first coil 12 and the second coil 13 of the charging coil module 1 of the present application can be set with narrow spacing. Under the condition that the outer diameter of the charging coil module 1 is the same, compared with the traditional charging coil module solution without narrow spacing setting, the DC resistance (Remote Differential Compression, RDC) of the charging coil module 1 of the present application can be the same as that of the traditional charging coil module, and the power can be the same, but the overall thickness can be thinner. In other words, the charging coil module 1 of the present application can reduce the overall thickness of the charging coil module 1 while meeting the power requirements of the traditional charging coil module, and realize the miniaturization setting of the charging coil module 1. Among them, the thickness of the charging coil module 1 can be reduced by about 20 to 70 microns. In this way, when the charging coil module 1 of the present application is applied to an electronic device 100 with a relatively tight internal space such as a mobile phone, the overall thickness of the charging coil module 1 can be reduced, so as to better meet the thinning requirements of the electronic device 100.

[0234] At the same time, compared with the traditional charging coil module 1 solution without narrow spacing setting, the impedance of the charging coil module 1 of this embodiment can be reduced by about 17%. Under the condition that the power of the charging coil module 1 (such as 50 W) is the same as that of the traditional charging coil module, the charging loss of the charging coil module 1 of this embodiment is smaller, and the time for maintaining the 50 W peak during the charging process is longer.

[0235] In some embodiments, Automated Optical Inspection (AOI) can also be performed in both step S120 and step S130 to reduce product defects and thus improve product yield.

[0236] In some embodiments, in step S140, the charging coil module 1 provided with the first insulating layer 14 and the second insulating layer 15 can also be processed. For example, operations such as pressing, desmutting, sandblasting, immersion gold, hot water washing, screen printing, baking of screen printing, electrical testing, cutting, and in-warehouse inspection can be sequentially performed on the charging coil module 1 covered with the first insulating layer 14 and the second insulating layer 15.

[0237] In some embodiments, during the process of manufacturing the charging coil module 1, a copper foil (not shown in the figure) can also be disposed around the first conductive portion 1222 of the first coil 12. The copper foil can be spaced apart from the first conductive portion 1222 of the first coil 12. In this way, the current can be made uniform through the copper foil during subsequent electroplating. Compared with the charging coil module 1 without the copper foil disposed around the first conductive portion 1222 of the first coil 12, the charging coil module 1 in this embodiment can increase the electroplated area by disposing the copper foil, thereby making the current uniform, reducing the current density for forming the first coil 12 and the second coil 13, making the electroplating more uniform, and being beneficial to improving product yield. It can be understood that the copper foil can be removed after the charging coil module 1 is manufactured, that is, the manufactured charging coil module 1 may not include the copper foil inside.

[0238] In some embodiments, the electroplating parameters in step S120 and step S130 can also be adjusted to change the electroplating speed and optimize the electroplating leads. The electroplating parameters can be the current density or the electroplating time. Exemplarily, the current density of the first conductive portion 1222 of the first coil 12 and the current density of the first conductive portion 1322 of the second coil 13 can be set differently. For example, the electroplating density of the first conductive portion 1222 of the first coil 12 can be 2.3 ADS, and the electroplating density of the first conductive portion 1321 of the second coil 13 can be 2.5 ADS. Here, ADS is the unit of current density, that is, amperes per square decimeter. At this time, the current density of the first conductive portion 1222 of the first coil 12 is lower than the current density of the first conductive portion 1322 of the second coil 13. In this way, by reducing the current density of the first conductive portion 1222 of the first coil 12, the thickness of the first coil 12 obtained after electroplating is made more uniform, which is beneficial to improving product yield.

[0239] In some embodiments, in step S150, other electrical components can also be arranged in the charging coil module 1 through Surface Mounted Technology (SMT). Among them, when pasting components on the substrate 11 of the charging coil 10 before the reflow soldering step of the surface mounting technology, the substrate 11 of the charging coil 10 can be clamped by using a magnetic fixture to share the heat. This can reduce the risk of blistering when forming the first insulating layer 14 and the second insulating layer 15, and improve the product yield.

[0240] In some embodiments, in step S140, when washing the charging coil module 1 covered with the first insulating layer 14 and the second insulating layer 15, either end of the substrate 11 of the charging coil 10 can be placed on a guide plate to pass through the cleaning section. In this way, by arranging the guide plate to support the substrate 11 of the charging coil 10 and guiding the transmission of the substrate 11 of the charging coil 10, the risk of wrinkles or creases generated during the water washing process can be effectively reduced, which is beneficial to improving the product yield.

[0241] The above text introduced the structure of a charging coil 10 and its preparation method in combination with relevant drawings. The following will introduce another structure of the charging coil 10 and its preparation method in combination with relevant drawings.

[0242] Figure 24 is a partial cross-sectional view of the charging coil module 1 shown in this embodiment in another embodiment. Exemplarily, Figure 24 is Figure 22 a partial cross-sectional view of the second nanocrystalline layer 18 and the second graphite layer 19 formed on the second insulating layer 15 shown.

[0243] In this embodiment, the charging coil module 11 is Figure 23 substantially the same as the structure of the charging coil module 1 shown, and the same technical content will not be elaborated here. As Figure 24 shown, the charging coil 10 can further include a second nanocrystalline layer 18 and a second graphite layer 19. The second nanocrystalline layer 18 and the second graphite layer 19 are laminated on the second insulating layer 15 in sequence. Among them, the materials of the second nanocrystalline layer 18 and the second graphite layer 19 can refer to the settings of the first nanocrystalline layer and the second graphite layer 19. Details are not elaborated here specifically.

[0244] Exemplarily, the second nanocrystalline layer 18 can be bonded to the surface of the second insulating layer 15 of the charging coil 10 away from the second coil 13 through an adhesive layer. The second graphite layer 19 can be connected to the surface of the second nanocrystalline layer 18 away from the second insulating layer 15 through adhesive pressing. In this way, by arranging the second nanocrystalline layer 18 and the second graphite layer 19, the volume of nanocrystals and graphite in the charging coil module 1 is increased, effectively improving the charging power of the charging coil module 1.

[0245] It can be understood that in this embodiment, the charging coil module 1 is Figure 23 substantially the same as the preparation method of the charging coil module 1 shown, and the same technical content will not be elaborated here.

[0246] In S150 above, after forming the first nanocrystalline layer 16, a second nanocrystalline layer 18 can be formed on the second insulating layer 15 of the charging coil 10. For example, the second nanocrystalline layer 18 can be adhered to the second insulating layer 15 of the charging coil 10 through an adhesive layer. Of course, the second nanocrystalline layer 18 can also be formed on the second insulating layer 15 of the charging coil 10 while forming the first nanocrystalline layer 16.

[0247] In S160 above, after forming the first graphite layer 17, a second graphite layer 19 can be formed on the second nanocrystalline layer 18. Exemplarily, the second graphite layer 19 can be connected to the surface of the second nanocrystalline layer 18 away from the second insulating layer 15 by means of adhesive pressing. Of course, the second graphite layer 19 can also be formed on the second nanocrystalline layer 18 while forming the first graphite layer 17.

[0248] The above specifically introduced the structure and preparation method of a charging coil module 1 in combination with relevant drawings. The charging coil module 1 can be applied to a straight phone, that is, a non-foldable electronic device. The following will specifically introduce the structure and preparation method of another charging coil module 1 in combination with relevant drawings. The charging coil module 1 can be applied to a folding phone, that is, a foldable electronic device. The same technical content as above will not be elaborated here.

[0249] Figure 25 is a schematic structural diagram of an embodiment when the electronic device 100 provided in the embodiment of the present application is in an unfolded state. As Figure 25 shown, the electronic device 100 provided in the present application is a foldable electronic device 100. The foldable electronic device 100 can be a foldable device such as a mobile phone, a tablet computer, a personal computer, a laptop computer, a vehicle-mounted device, or a wearable device. Figure 25 and Figure 26 The foldable electronic device 100 in the shown embodiment is described by taking a mobile phone as an example. It can be understood that the number of folds of the electronic device 100 is not limited to Figure 25 and Figure 26 the 1 time shown, that is, the electronic device 100 is not limited to Figure 25 the two-fold electronic device 100 shown. In other embodiments, the number of folds of the electronic device 100 can be greater than 1 time, that is, the electronic device 100 can be an electronic device 100 with more than two folds.

[0250] For ease of description, exemplarily, the thickness direction of the electronic device 100 is defined as the Z-axis direction, and the extending direction of the rotation axis of the electronic device 100 is the Y-axis direction, that is, the width direction of the electronic device 100 is the Y-axis direction. The direction perpendicular to the Y-axis direction and the Z-axis direction is the X-axis direction, that is, the length direction of the electronic device 100 is the X-axis. It can be understood that the coordinate system of the electronic device 100 can also be flexibly set according to specific requirements. Exemplarily, the X-axis direction is defined as the first direction, and the Y-axis direction is defined as the second direction. In other embodiments, the first direction and the second direction can also be flexibly set according to requirements, as long as the first direction and the second direction are different. It can be understood that in this embodiment, when the direction of the rotation axis of the electronic device 100 is the Y-axis direction, the electronic device 100 can be relatively unfolded or folded along the Y-axis direction. In this way, when the electronic device 100 is in the closed state, the size of the electronic device 100 in the X-axis direction becomes smaller.

[0251] Figure 26 Yes Figure 25 is a partial exploded view of an embodiment of the electronic device 100 shown.

[0252] As Figure 25 and Figure 26 shown, the electronic device 100 includes a charging coil module 1, a display screen 2, a first housing 37, a second housing 38, a folding mechanism 39, and a load 4. Among them, the first housing 37, the second housing 38, and the folding mechanism 39 can form the housing device of the electronic device 100.

[0253] In addition, the folding mechanism 39 connects the first housing 37 and the second housing 38. The folding mechanism 39 is used to relatively unfold or fold the first housing 37 and the second housing 38. It can be understood that in this application, the folding mechanism 39 can be an internal folding mechanism or an external folding mechanism. The internal folding mechanism refers to a folding mechanism that can fold at least part of the display screen 2 between the two housings. The external folding mechanism refers to a folding mechanism that can fold at least part of the display screen 2 outside the housing. This application does not limit the specific structure of the folding mechanism 39. In this embodiment, the folding mechanism 39 is taken as an example of an internal folding mechanism for description.

[0254] As Figure 25 and Figure 26 shown, when the first housing 37, the second housing 38, and the folding mechanism 39 are relatively unfolded to the unfolded state, the electronic device 100 is in the unfolded state. Exemplarily, when the electronic device 100 is in the unfolded state, the first housing 37, the second housing 38, and the folding mechanism 39 can be arranged along the X-axis direction, and can be approximately 180° (allowing some deviation, such as 165°, 177°, or 185°, etc.).

[0255] AsFigure 25 and Figure 26 As shown in Figure 26 , when the first housing 37, the second housing 38, and the folding mechanism 39 are relatively folded to the folded state, the electronic device 100 is in the folded state. Exemplarily, when the electronic device 100 is in the folded state, the first housing 37 and the second housing 38 may approach each other, and the first housing 37 and the second housing 38 are stacked in the thickness direction of the electronic device 100 (i.e., the Z-axis direction). When the first housing 37 and the second housing 38 are converted from the unfolded state to the folded state, the folding mechanism 39 may enclose an accommodation space 331. It can be understood that folding mechanisms 39 with different structures have accommodation spaces 331 with different shapes.

[0256] As Figure 25 and Figure 26 shown in Figure 26 , the display screen 2 may adopt a flexible screen. For example, the display screen 2 may be an organic light-emitting diode (OLED) display panel, an active-matrix organic light-emitting diode (AMOLED) display panel, a mini organic light-emitting diode display panel, a micro organic light-emitting diode display panel, or a quantum dot light-emitting diode (QLED) display panel, etc.

[0257] As Figure 25 and Figure 26 shown in Figure 26 , the display screen 2 includes a first screen area 21, a second screen area 22, and a third screen area 23 that are sequentially connected. The second screen area 22 is connected between the first screen area 21 and the third screen area 23. Exemplarily, Figure 25 and Figure 26 both take the first screen area 21, the second screen area 22, and the third screen area 23 arranged along the X-axis direction as an example for illustration, and the first screen area 21, the second screen area 22, and the third screen area 23 are schematically distinguished by dotted lines.

[0258] Among them, the first screen area 21 of the display screen 2 can be fixed on the first housing 37. The third screen area 23 can be fixed on the second housing 38. It can be understood that when the folding mechanism 39 makes the first housing 37 and the second housing 38 relatively unfold or fold, the first housing 37 can drive the first screen area 21 of the display screen 2 to unfold or fold relative to the third screen area 23, and the second housing 38 can drive the third screen area 23 of the display screen 2 to unfold or fold relative to the first screen area 21. At this time, the second screen area 22 of the display screen 2 can be bent.

[0259] In one implementation, the first screen area 21 of the display screen 2 can be fixedly connected to the first housing 37 through a first adhesive layer (not shown in the figure). The third screen area 23 can be fixed on the second housing 38 through a second adhesive layer (not shown in the figure). It can be understood that the shape, position, and size of the first adhesive layer and the second adhesive layer are not specifically limited.

[0260] Such as Figure 25 and Figure 26 As shown, when the electronic device 100 is in the unfolded state, the display screen 2 can be in the unfolded state. Exemplarily, the first screen area 21, the second screen area 22, and the third screen area 23 of the display screen 2 can be approximately 180° (allowing slight deviations, such as 165°, 177°, or 185°). At this time, the display screen 2 has a continuous large-area display area, that is, the display screen 2 can achieve large-screen display, and the user experience is better.

[0261] Exemplarily, when the electronic device 100 is in the unfolded state, at least part of the folding mechanism 39 can be used to support the second screen area 22. In this way, when the second screen area 22 of the display screen 2 is subjected to pressing force, squeezing force, or impact force, etc., the folding mechanism 39 can be used to improve the compressive resistance and impact resistance of the second screen area 22, that is, to ensure that the second screen area 22 is not easily dented or the like.

[0262] Such as Figure 25 and Figure 26 As shown, when the electronic device 100 is in the folded state, the display screen 2 can be in the folded state. Exemplarily, the first screen area 21 and the third screen area 23 of the display screen 2 are arranged close to each other. At this time, the first screen area 21 and the third screen area 23 of the display screen 2 can be arranged along the Z-axis direction. In addition, the second screen area 22 of the display screen 2 is bent.

[0263] Exemplarily, when the electronic device 100 is in a folded state, the first screen area 21, the second screen area 22, and the third screen area 23 of the display screen 2 are all located between the first housing 37 and the second housing 38, and the second screen area 22 is located in the accommodation space of the folding mechanism 39. Among them, when the electronic device 100 is in a folded state, since the first screen area 21, the second screen area 22, and the third screen area 23 of the display screen 2 are all located between the first housing 37 and the second housing 38, the display surface of the first screen area 21 faces the display surface of the third screen area 23, the second screen area 22 is bent and disposed between the first screen area 21 and the third screen area 23, and the second screen area 22 is located in the accommodation space of the folding mechanism 39, the first screen area 21, the second screen area 22, and the third screen area 23 of the display screen 2 can be referred to as the inner screen of the display screen 2. When the first housing 37 and the second housing 38 are folded, the first screen area 21, the second screen area 22, and the third screen area 23 are folded into the space formed by the first housing 37, the second housing 38, and the folding mechanism 39. Therefore, the first screen area 21, the second screen area 22, and the third screen area 23 can also be referred to as the inner screen of the display screen 2.

[0264] As Figure 25 and Figure 26 shown, when the display screen 2 is installed between the first housing 37 and the second housing 38, the display screen 2, the first housing 37, the second housing 38, and the folding mechanism 39 enclose the internal space of the electronic device 100. The charging coil module 1 and the load 4 can both be located in the internal space of the electronic device 100. The charging coil module 1 is electrically connected to the load 4. When the electronic device 100 is in a charging state, the charging coil module 1 can charge the load 4. The load 4 can be a battery, a chip, a speaker, a camera, or other devices waiting to be charged. Figure 25 and Figure 26 Taking the load 4 as a battery as an example for illustration.

[0265] It can be understood that since the charging coil module 1 and the load 4 can both be located in the internal space of the electronic device 100, Figure 25 the charging coil module 1 and the load 4 are schematically shown by dotted lines.

[0266] Figure 27 is Figure 25 a schematic structural diagram of the charging coil module 1 in an embodiment.

[0267] As Figure 27 shown, the charging coil module 1 includes a charging coil 10 and a circuit board 20. The charging coil 10 and the circuit board 20 can be an integral structure. Among them, the structure of the charging coil 10 can refer to the structure of the charging coil 10 in the first embodiment. Specifically, it will not be elaborated here.

[0268] As Figure 27As shown, in the X-axis direction, the circuit board 20 includes a first part 201, a second part 202, and a third part 203 that are sequentially connected. In other words, the second part 202 is connected between the first part 201 and the third part 203. The second part 202 can be bent. It can be understood that Figure 27 The first part 201, the second part 202, and the third part 203 are schematically distinguished by dashed lines.

[0269] In addition, the second part 202 of the circuit board 20 includes a first side surface 204 and a second side surface 205 that are disposed back to back. The circuit board 20 is provided with a through hole 206. The through hole 206 forms openings on the first side surface 204 and the second side surface 205.

[0270] Please refer to Figure 27 , and in combination with Figures 25 to 26 As shown, the first part 201 of the circuit board 20 can be disposed on the first housing 37. The third part 203 can be disposed on the second housing 38. In addition, the folding mechanism 39 passes through the through hole 206 of the circuit board 20. In other words, a part of the folding mechanism 39 is located on the side where the first side surface 204 of the second part 202 is located. A part of the folding mechanism 39 is located within the through hole 206 of the second part 202. A part of the folding mechanism 39 is located on the side where the second side surface 205 of the second part 202 is located.

[0271] Exemplarily, in the X-axis direction, the width of the through hole 206 is greater than the width of the folding mechanism 39. In this way, the folding mechanism 39 can pass through the through hole 206 more easily.

[0272] It can be understood that by disposing the first part 201 of the circuit board 20 on the first housing 37 and the third part 203 on the second housing 38, the circuit board 20 can be used to provide a power supply path for the loads on the first housing 37 and the second housing 38, and the circuit board 20 can also be used to provide a signal transmission path for the electronic devices on the first housing 37 and the second housing 38.

[0273] It can be understood that when the folding mechanism 39 expands or folds the first housing 37 relative to the second housing 38, the first housing 37 can drive the first part 201 of the circuit board 20 to expand or fold relative to the third part 203, and the second housing 38 can drive the third part 203 of the circuit board 20 to expand or fold relative to the first part 201. At this time, the second part 202 of the circuit board 20 can be bent. In one implementation, the first part 201 of the circuit board 20 can be fixed to the first housing 37. The third part 203 of the circuit board 20 can be fixed to the second housing 38.

[0274] Please refer to Figure 27 , and in combination with Figure 25 andFigure 26 As shown, when the electronic device 100 is in the unfolded state, the circuit board 20 can be in the unfolded state. Exemplarily, the first part 201, the second part 202, and the third part 203 of the circuit board 20 can be approximately 180° (allowing slight deviations, such as 165°, 177°, or 185°). The circuit board 20 can be in a flat plate shape.

[0275] Please refer to Figure 27 , and in combination with Figure 25 and Figure 26 As shown, when the electronic device 100 is in the folded state, the circuit board 20 can be in the folded state. Exemplarily, the first part 201 and the third part 203 of the circuit board 20 can be arranged close to each other. The second part 202 is bent. The circuit board 20 can be approximately in a "U" shape.

[0276] Please refer to Figure 27 , and in combination with Figure 25 and Figure 26 As shown, the charging coil 10 can be located in the first part 201 or the third part 203. It can be understood that when the folding mechanism 39 unfolds or folds the first housing 37 relative to the second housing 38, the first part 201 and the third part 203 of the circuit board 20 are not bent. In this way, by locating the charging coil in the first part 201 or the third part 203, the charging coil 10 does not need to be bent when the first housing 37 and the second housing 38 are unfolded or folded relative to each other, thereby avoiding damage to the charging coil 10, that is, improving the reliability of the charging coil 10. In other embodiments, the charging coil 10 can also be located in the second part 202 of the circuit board 20.

[0277] Figure 28 is Figure 27 A partial cross-sectional view of an embodiment of the charging coil module 1 along the G-G line as shown.

[0278] As Figure 28 shown, in the Z-axis direction, the circuit board 20 includes a substrate 21, a first wiring layer 22, a second wiring layer 23, a first insulating layer 24, and a second insulating layer 25. It can be understood that the circuit board 20 can also include more or fewer structures. For example, the circuit board 20 can include more structures. The circuit board 20 can also include multiple insulating layers and multiple wiring layers. The multiple wiring layers and multiple insulating layers can be alternately laminated on the first insulating layer 24 and / or the second insulating layer 25. Again, for example, the circuit board 20 can include fewer structures. The circuit board 20 can also not include the first insulating layer 24 and / or the second insulating layer 25 of the circuit board 20.

[0279] In one embodiment, the material of the substrate 21 of the circuit board 20 may be an insulating material. Exemplarily, the substrate 21 of the circuit board 20 includes a three-layer structure, specifically including a first PI layer 21b, an adhesive layer 21a, and a second PI layer 21c that are stacked in sequence. The adhesive layer 21a uses a polymer-based insulating adhesive material (booding sheet).

[0280] In one embodiment, the materials of the first wiring layer 22 and the second wiring layer 23 may both be metals. For example, the materials of the first wiring layer 22 and the second wiring layer 23 may both be copper.

[0281] In one embodiment, the first insulating layer 24 and the second insulating layer 25 of the circuit board 20 may be insulating materials. Exemplarily, both the first insulating layer 24 and the second insulating layer 25 of the circuit board 20 are two-layer structures, specifically including a PI layer and an adhesive layer.

[0282] As Figure 28 shown, the substrate 21 of the circuit board 20 may include a first surface 211 and a second surface 212 that are disposed opposite to each other. Among them, the first surface 211 of the substrate 21 of the circuit board 20 is the surface of the first PI layer 21b that is far from the adhesive layer 21a. The second surface 212 of the substrate 21 of the circuit board 20 is the surface of the second PI layer 21c that is far from the adhesive layer 21a. The first wiring layer 22 may be disposed on the first surface 211 of the substrate 21 of the circuit board 20. The second wiring layer 23 may be disposed on the second surface 212 of the substrate 21 of the circuit board 20. In other words, the substrate 21 of the circuit board 20 is located between the first wiring layer 22 and the second wiring layer 23.

[0283] As Figure 28 shown, the through hole 206 of the circuit board 20 is located on the substrate 21 of the circuit board 20, and the through hole 206 of the circuit board 20 forms openings on two sides of the substrate 21 of the circuit board 20. In this way, when the folding mechanism 39 passes through the through hole 206 of the circuit board 20, the folding mechanism 39 is not likely to affect the first wiring layer 22 and the second wiring layer 23 of the circuit board 20. Exemplarily, when the substrate 21 of the circuit board 20 includes a first PI layer 21b, an adhesive layer 21a, and a second PI layer 21c that are stacked in sequence. The through hole 206 of the circuit board 20 is provided in the adhesive layer 21a of the substrate 21 of the circuit board 20.

[0284] It can be understood that in the X-axis direction, the circuit board 20 is divided into three parts, namely a first part 201, a second part 202, and a third part 203. In the X-axis direction, the first wiring layer 22 also correspondingly is divided into three parts, namely the first wiring layer 223 of the first part 201, the first wiring layer 224 of the second part 202, and the first wiring layer 225 of the third part 203. It can be understood that, Figure 28The first part 201, the second part 202, and the third part 203 are schematically distinguished by dashed boxes with different linear scales.

[0285] In this embodiment, in the Z-axis direction, the thickness of the first wiring layer 224 of the second part 202 is less than the thickness of the first wiring layer 223 of the first part 201 and the thickness of the first wiring layer 225 of the third part 203. Among them, the first wiring layer 223 of the first part 201 and the first wiring layer 225 of the third part 203 are arranged in the same or similar manner. Hereinafter, the first wiring layer 223 of the first part 201 will be taken as an example for description.

[0286] In one embodiment, in the Z-axis direction, the thickness of the first wiring layer 223 of the first part 201 is between 5 microns and 100 microns. Exemplarily, the thickness of the first wiring layer 223 of the first part 201 is equal to 85 microns.

[0287] In one embodiment, in the Z-axis direction, the thickness of the first wiring layer 224 of the second part 202 is in the range of 10 microns to 80 microns. Exemplarily, the thickness of the first wiring layer 223 of the first part 201 is equal to 40 microns.

[0288] In one embodiment, in the Z-axis direction, the thickness of the first wiring layer 225 of the third part 203 is between 5 microns and 100 microns. Exemplarily, the thickness of the first wiring layer 225 of the third part 203 is equal to 85 microns.

[0289] Exemplarily, the first wiring layer 223 of the first portion 201 is composed of three metal layers. The second wiring of the second portion 202 is composed of two metal layers. Among them, the first metal layer 223a of the first wiring layer 223 of the first portion 201, the first metal layer 224a of the first wiring layer 224 of the second portion 202, and the first metal layer 225a of the first wiring layer 225 of the third portion 203 are arranged on the same layer and are of an integrally formed structure. In addition, the second metal layer 223b of the first wiring layer 223 of the first portion 201, the second metal layer 224b of the first wiring layer 224 of the second portion 202, and the second metal layer 225b of the first wiring layer 225 of the third portion 203 are also arranged on the same layer and are of an integrally formed structure. The third metal layer 223c of the first wiring layer 223 of the first portion 201 and the third metal layer 225c of the first wiring layer 225 of the third portion 203 are arranged at intervals but on the same layer, that is, the third metal layer 223c of the first wiring layer 223 of the first portion 201 and the third metal layer 225c of the first wiring layer 225 of the third portion 203 can be formed by the same process. It can be understood that both the third metal layer 223c of the first wiring layer 223 of the first portion 201 and the third metal layer 225c of the first wiring layer 225 of the third portion 203 protrude relative to the second metal layer 224b of the first wiring layer 224 of the second portion 202.

[0290] Exemplarily, the second metal layer 223b of the first wiring layer 223 of the first portion 201, the second metal layer 224b of the first wiring layer 224 of the second portion 202, and the second metal layer 225b of the first wiring layer 225 of the third portion 203 can be formed on the first metal layer 223a of the first wiring layer 223 of the first portion 201, the first metal layer 224a of the first wiring layer 224 of the second portion 202, and the first metal layer 225a of the first wiring layer 225 of the third portion 203 respectively by an electroplating process. The third metal layer 223c of the first wiring layer 223 of the first portion 201 can be formed on the second metal layer 223b of the first wiring layer 223 of the first portion 201 by an electroplating process. The third metal layer 225c of the first wiring layer 225 of the third portion 203 can be formed on the second metal layer 225b of the first wiring layer 225 of the third portion 203 by an electroplating process.

[0291] As Figure 28 shown, the first insulating layer 24 of the circuit board 20 can be provided on the first wiring layer 22 and cover the first wiring layer 22. The first insulating layer 24 of the circuit board 20 can be used to protect the first wiring layer 22.

[0292] In this embodiment, the first insulating layer 24 includes a first sub-insulating layer 241, a second sub-insulating layer 242, and a third sub-insulating layer 243. The glass transition temperature (Tg) of the first sub-insulating layer 241 is greater than the glass transition temperature of the second sub-insulating layer 242 and the glass transition temperature of the third sub-insulating layer 243. In this way, on the one hand, the first sub-insulating layer 241 is not easily vitrified due to high-temperature processing in the subsequent processes of the circuit board 20, thereby avoiding the shift of the bending stress neutral line of the second part 202 of the circuit board 20 and the first sub-insulating layer 241 losing the protection of the first wiring layer 224 of the second part 202. On the other hand, the first sub-insulating layer 241 is not easily vitrified during the folding or flattening of the circuit board 20, thereby avoiding the shift of the bending stress neutral line of the second part 202 of the circuit board 20 and the first sub-insulating layer 241 losing the protection of the first wiring layer 224 of the second part 202.

[0293] Exemplarily, the glass transition temperature of the first sub-insulating layer 241 is greater than or equal to 90 °C. For example, the glass transition temperature of the first sub-insulating layer 241 is in the range of 90 °C to 150 °C.

[0294] Exemplarily, the glass transition temperature of the second sub-insulating layer 242 is less than 90 °C. For example, the glass transition temperature of the second sub-insulating layer 242 is in the range of 60 °C to 70 °C.

[0295] Exemplarily, the glass transition temperature of the third sub-insulating layer 243 is less than 90 °C. For example, the glass transition temperature of the third sub-insulating layer 243 is in the range of 60 °C to 70 °C.

[0296] In this embodiment, the first sub-insulating layer 241 is disposed on the first wiring layer 224 of the second part 202 and covers a part of the first wiring layer 224 of the second part 202. The first sub-insulating layer 241 is spaced apart from the third layer of metal 223c of the first wiring layer 223 of the first part 201. The first sub-insulating layer 241 is also spaced apart from the third layer of metal 225c of the first wiring layer 225 of the third part 203. This can ensure that during the bending process of the second part 202 of the circuit board 20, the wirings of the first wiring layer 22 and / or the second wiring layer 23 are not easily broken due to stress concentration.

[0297] Exemplarily, in the X-axis direction, the distance d between the first sub-insulating layer 241 and the third layer of metal 223c of the first wiring layer 223 of the first part 201 1 satisfies: d 1 ≥ 0 mm. Exemplarily, 0.2 mm ≤ d 1 ≤ 0.5 mm.

[0298] Exemplarily, in the X-axis direction, the distance d between the first sub-insulating layer 241 and the third layer of metal 225c of the first trace layer 225 of the third part 203 2 satisfies: d 2 ≥ 0 mm. Exemplarily, 0.2 mm ≤ d 2 ≤ 0.5 mm.

[0299] In this embodiment, a part of the second sub-insulating layer 242 is disposed on the first trace layer 223 of the first part 201, and a part is disposed on the first sub-insulating layer 241, that is, a part of the second sub-insulating layer 242 overlaps the first sub-insulating layer 241. At this time, the second sub-insulating layer 242 can cover the first trace layer 223 of the first part 201, the space between the first trace layer 223 of the first part 201 and the first sub-insulating layer 241, and a part of the first sub-insulating layer 241. In this way, during the bending process of the second part 202 of the circuit board 20, the first sub-insulating layer 241 and the second sub-insulating layer 242 can always cover the first trace layer 224 of the first part 201 and the second part 202.

[0300] In one embodiment, in the X-axis direction, the width L of the part where the second sub-insulating layer 242 is disposed on the first sub-insulating layer 241 1 satisfies: L 1 ≥ 0.05 mm. Exemplarily, 0.2 mm ≤ L 1 ≤ 0.5 mm.

[0301] In this embodiment, a part of the third sub-insulating layer 243 is disposed on the first trace layer 225 of the third part 203, and a part is disposed on the first sub-insulating layer 241, that is, a part of the third sub-insulating layer 243 overlaps the first sub-insulating layer 241. In this way, the third sub-insulating layer 243 can cover the first trace layer 225 of the third part 203, the space between the first trace layer 225 of the third part 203 and the first sub-insulating layer 241, and a part of the first sub-insulating layer 241. In this way, during the bending process of the second part 202 of the circuit board 20, the first sub-insulating layer 241 and the second sub-insulating layer 242 can always cover the first trace layer 224 of the third part 203 and the second part 202.

[0302] In one embodiment, in the X-axis direction, the width L of the part where the third sub-insulating layer 243 is disposed on the first sub-insulating layer 241 2 satisfies: L 2 ≥ 0.2 mm. Exemplarily, 0.2 mm ≤ L 2 ≤ 0.5 mm.

[0303] In one embodiment, in the Z-axis direction, the first sub-insulating layer 241 includes a first PI layer 241a (i.e., the first polyimide layer) and a first AD layer 241b (the first adhesive layer). Among them, the first AD layer 241b is bonded to the first wiring layer 224 of the second part 202. In addition, in the Z-axis direction, the second sub-insulating layer 242 includes a second PI layer 242a and a second AD layer 242b. Among them, the second AD layer 242b is bonded to the first wiring layer 223 of the first part 201. In addition, the third sub-insulating layer 243 includes a third PI layer 243a and a third AD layer 243b. Among them, the third AD layer 243b is bonded to the first wiring layer 225 of the third part 203.

[0304] In this embodiment, in the Z-axis direction, the thicknesses of the second AD layer 242b and the third AD layer 243b are greater than the thickness of the first AD layer 241b. In this way, the relatively thick second AD layer 242b can better cover the first wiring layer 223 of the first part 201, and two adjacent wirings in the first wiring layer 223 of the first part 201 can be better separated by the second AD layer 242b. In addition, the relatively thick third AD layer 243b can better cover the first wiring layer 225 of the third part 201, and two adjacent wirings in the first wiring layer 223 of the third part 201 can be better separated by the third AD layer 243b. In addition, since the thickness of the first wiring layer 224 of the second part 202 is relatively thin, the relatively thin first AD layer 241b can better cover the first wiring layer 224 of the second part 202, and two adjacent wirings in the first wiring layer 224 of the second part 202 can be better separated by the first AD layer 241b.

[0305] Exemplarily, in the Z-axis direction, the ratio of the thickness of the first AD layer 241b to the thickness of the first wiring layer 224 of the second part 202 is between 0.6 and 0.9. For example, in the Z-axis direction, the ratio of the thickness of the first AD layer 241b to the thickness of the first wiring layer 224 of the second part 202 can be 0.6, 0.7, 0.8 or 0.9. This can ensure that the first AD layer 241b can better cover the first wiring layer 224 of the second part 202.

[0306] Exemplarily, in the Z-axis direction, the ratio of the thickness of the second AD layer 242b to the thickness of the first wiring layer 223 of the first part 201 is between 0.6 and 0.9. For example, in the Z-axis direction, the ratio of the thickness of the second AD layer 242b to the thickness of the first wiring layer 223 of the first part 201 can be 0.6, 0.7, 0.8 or 0.9. This can ensure that the second AD layer 242b can better cover the first wiring layer 223 of the first part 201.

[0307] It can be understood that the thickness of the third AD layer 243b can refer to the setting method of the thickness of the second AD layer 242b. Specifically, it will not be elaborated here.

[0308] Exemplarily, in the Z-axis direction, the thickness of the first AD layer 241b is less than 25 microns. For example, the thickness of the first AD layer 241b is 12 microns.

[0309] Exemplarily, in the Z-axis direction, the thickness of the second AD layer 242b is greater than 25 microns. For example, the thickness of the first AD layer 241b is 32 microns.

[0310] Exemplarily, in the Z-axis direction, the thickness of the third AD layer 243b is greater than 25 microns. For example, the thickness of the third AD layer 243b is 32 microns.

[0311] In one embodiment, in the Z-axis direction, the thickness of the first AD layer 241b is between 5 microns and 40 microns.

[0312] In one embodiment, in the Z-axis direction, the thickness of the second AD layer 242b is between 5 microns and 40 microns.

[0313] In one embodiment, in the Z-axis direction, the thickness of the third AD layer 243b is between 5 microns and 40 microns.

[0314] It can be understood that the second wiring layer 23 and the first wiring layer 22 can have the same or similar structures, symmetric or partially symmetric structures, or different structures. In this embodiment, the second wiring layer 23 and the first wiring layer 22 are symmetric structures. For the basic design of the component structure, the design of the connection relationship between components, and the design of the connection relationship between components and other structures outside the component of the second wiring layer 23, the relevant solutions of the first wiring layer 22 can be referred to. At the same time, it is allowed that there are some differences in the detailed structure or position arrangement of the components between the second wiring layer 23 and the first wiring layer 22.

[0315] In addition, the second insulating layer 25 and the first insulating layer 24 can have the same or similar structures, symmetric or partially symmetric structures, or different structures. In this embodiment, the second insulating layer 25 and the first insulating layer 24 are symmetric structures. For the basic design of the component structure, the design of the connection relationship between components, and the design of the connection relationship between components and other structures outside the component of the second insulating layer 25, the relevant solutions of the first insulating layer 24 can be referred to. At the same time, it is allowed that there are some differences in the detailed structure or position arrangement of the components between the second insulating layer 25 and the first insulating layer 24.

[0316] It can be understood that the settings of the second wiring layer 23 and the second insulating layer 25 will not be elaborated here.

[0317] In this embodiment, by setting the thickness of the first wiring layer 224 of the second part 202 to be less than the thicknesses of the first wiring layer 223 of the first part 201 and the first wiring layer 225 of the third part 203, that is, by setting the thickness of the first wiring layer 224 of the second part 202 to be smaller, the stress neutral line of the second part 202 of the circuit board 20 is adjusted, so that the stress neutral line of the second part 202 of the circuit board 20 is located on the insulating layer of the second part 202 of the circuit board 20, that is, to avoid the stress neutral line of the second part 202 of the circuit board 20 being located on the first wiring layer 224 of the second part 202, thereby ensuring that the first sub-insulating layer 241 can protect the first wiring layer 224 of the second part 202, and further improving the service life of the charging coil module 1.

[0318] In addition, a through hole 206 is provided on the substrate of the second part 202 of the circuit board 20. On the one hand, it can be used for the folding mechanism 39 to pass through, and on the other hand, it can adjust the stress neutral line of the second part 202 of the circuit board 20, so that the stress neutral line of the second part 202 of the circuit board 20 is located on the insulating layer of the second part 202 of the circuit board 20, that is, to avoid the stress neutral line of the second part 202 of the circuit board 20 being located on the first wiring layer 224 of the second part 202, thereby ensuring that the first sub-insulating layer 241 can protect the first wiring layer 224 of the second part 202, and further improving the service life of the charging coil module 1.

[0319] It can be understood that by providing the first sub-insulating layer 241 on the first wiring layer 224 of the second part 202, providing the second sub-insulating layer 242 on the first wiring layer 223 of the first part 201, and providing the third sub-insulating layer 243 on the first wiring layer 225 of the third part 203, and the glass transition temperature of the first sub-insulating layer 241 is greater than the glass transition temperatures of the second sub-insulating layer 242 and the third sub-insulating layer 243. In this way, on the one hand, the first sub-insulating layer 241 is not easily vitrified due to high-temperature processing in the subsequent processes of the circuit board, thereby avoiding the bending stress neutral line of the second part 202 from shifting and the first sub-insulating layer 241 losing its protection of the first wiring layer 224 of the second part 202; on the other hand, the first sub-insulating layer 241 is not easily vitrified during the folding or flattening process of the circuit board 20, thereby avoiding the bending stress neutral line of the first wiring layer 224 of the second part 202 from shifting and the first sub-insulating layer 241 losing its protection of the first wiring layer 224 of the second part 202.

[0320] In addition, since the first part 201 and the third part 203 of the circuit board 20 may not be bent during the folding or unfolding process of the circuit board 20, the problem of center line offset of the first part 201 and the third part 203 of the circuit board 20 does not need to be considered. In this embodiment, by setting the glass transition temperatures of the second sub-insulating layer 242 and the third sub-insulating layer 243 to be relatively low, in this way, the second sub-insulating layer 242 and the third sub-insulating layer 243 do not need to be respectively disposed on the first wiring layer 223 of the first part 201 and the first wiring layer 225 of the third part 203 through high-temperature treatment, thereby reducing the covering difficulty of the second sub-insulating layer 242 and the third sub-insulating layer 243.

[0321] It can be understood that by setting the thicknesses of the first wiring layer 223 of the first part 201 and the first wiring layer 225 of the third part 203 to be greater than the thickness of the first wiring layer 224 of the second part 202. In this way, by setting the thickness of the first wiring layer 224 of the second part 202 to be relatively small, the stress neutral line of the second part 202 of the circuit board 20 can be adjusted, so that the stress neutral line of the second part 202 of the circuit board 20 is located on the insulating layer of the second part 202 of the circuit board 20, that is, to avoid the stress neutral line of the second part 202 of the circuit board 20 being located on the first wiring layer 224 of the second part 202, thereby ensuring that the first sub-insulating layer 241 can protect the first wiring layer 224 of the second part 202, and further improving the service life of the charging coil module 1.

[0322] It can be understood that by setting a part of the second sub-insulating layer 242 to overlap the first sub-insulating layer 241, and the distance d between the first sub-insulating layer 241 and the third layer of metal of the first wiring layer of the first part 1 satisfies: 0.2 mm ≤ d 1 ≤ 0.5 mm. In this way, it can be ensured that the first wiring layer 224 of the second part 202 is prone to wiring breakage due to excessive stress concentration, thereby ensuring that the charging coil module 1 has a better service life.

[0323] It can be understood that by setting the width L of the part where the second sub-insulating layer 242 is disposed on the first sub-insulating layer 241 1 satisfies: L 1 ≥ 0.05 mm, so that during the bending process of the second part 202 of the circuit board 20, the connection between the first sub-insulating layer 241 and the second sub-insulating layer 242 is not prone to separation, the first wiring layer 224 of the second part 202 can be covered by the first sub-insulating layer 241 and the second sub-insulating layer 242, and the first wiring layer 224 of the second part 202 is not prone to breakage, thereby ensuring that the charging coil module 1 has a better service life.

[0324] It can be understood that while the charging coil module 1 achieves higher wireless charging efficiency by reducing link losses, the first coil 12 and the second coil 13 in the charging coil 10 can be arranged with a narrow pitch. Under the condition of the same size, compared with the charging coil 10 without the narrow pitch arrangement, the charging coil 10 in this embodiment has a higher metal (such as copper) content per unit area, thereby effectively reducing the charging loss, which is beneficial to extending the time for the charging coil 10 to maintain a 50W peak during charging and improving the charging efficiency.

[0325] It can be understood that while the charging coil module 1 achieves higher wireless charging efficiency by reducing link losses, the first coil 12 and the second coil 13 in the charging coil 10 can be arranged with a narrow pitch, a high thickness (such as a thickness greater than 40 microns) and a high line width (such as a line width greater than 40 microns). This is beneficial to reducing the impedance of the charging path. Exemplarily, compared with the charging impedance of a traditional charging coil module (such as 45.2 ohm), the charging coil module 1 in this embodiment can be reduced to 25.6 ohm, which is nearly 43% less. In addition, the heat dissipation capacity of the charging coil module 1 can also be improved.

[0326] The specific structure of the charging coil module 1 of the present application is specifically introduced above. The preparation process of the charging coil module 1 will be specifically introduced below with reference to the drawings. The preparation method of the charging coil module 1 in this embodiment ( Figures 12 to 24 ) is substantially the same as that in the above embodiment, and the same technical content will not be repeated here.

[0327] Prepare the double-sided board 30. Among them, the same technical content of this step as that of step S110 in the above embodiment will not be repeated. The difference is that Figure 29 and Figure 30 are Figure 12 structural schematic diagrams of some steps in another embodiment of the method for preparing the charging coil module 1 shown. Figures 1 to 2 . As Figure 29 and Figure 30 shown, two adhesive sheets 36 are used in this embodiment. The two adhesive sheets 36 are spaced between the first flexible copper clad laminate 34 and the second flexible copper clad laminate 35. In this way, after pressing the first flexible copper clad laminate 34, the two adhesive sheets 36 and the second flexible copper clad laminate 35 to form the double-sided board 30, the first flexible copper clad laminate 34, the second flexible copper clad laminate 35 and the two adhesive sheets 36 enclose the through hole 206 of the circuit board 20.

[0328] Etch the first etching layer 32 of the double-sided board 30 to form the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20. It can be understood that the technical content of this step, which is the same as that of step S120 in the above embodiment, will not be elaborated here. Specifically, reference can be made to the above Figures 16 to 20 shown manufacturing method. Specifically, it will not be elaborated here.

[0329] The difference from step S120 above is as follows: It can be understood that in step S120 above, after the first etching layer 32 of the double-sided board 30 is processed through processes such as film pasting, exposure, development, etching, and film stripping, electroplating can also be performed on the first conductive part 1222 of the first coil 12 of the charging coil 10 to form the second conductive part 1223 of the first coil 12. In this embodiment, electroplating can also be performed on the first conductive parts of the first wiring layer 22 of the first part 201 and the third part 203 to form the second conductive part, thereby greatly increasing the thickness of the first wiring layer 22 of the first part 201 and the third part 203. The first wiring layer 22 of the second part 202 of the circuit board 20 is not electroplated. For example, in the electroplating process, the first wiring layer 22 of the second part 202 of the circuit board 20 is covered by a dry film, so as to electroplate the first wiring layer 22 of the first part 201 and the third part 203.

[0330] It can be understood that the content of metal (such as copper) per unit area of the first wiring layer 22 of the first part 201 and the third part 203 is higher, and the volume of the traces in the first wiring layer 22 of the circuit board 20 can be larger, thereby reducing the charging loss. In addition, when realizing traces with the same function, the number of stacked layers of the circuit board 20 can be reduced.

[0331] Etch the second etching layer 33 of the double-sided board 30 to form the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20. It can be understood that this step is the same as or similar to the etching of the first etching layer 32 of the double-sided board 30. Specifically, it will not be elaborated here.

[0332] Form a first covering layer 41 on the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20, and form a second covering layer 42 on the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20. The first covering layer 41 covers the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20. The second covering layer 42 covers the second coil 13 of the charging coil 10 and the second wiring layer 23 of the circuit board 20.

[0333] It is understandable that the formation method and structure of the first covering layer 41 are similar to or the same as those of the second covering layer 42. The formation method and structure of the first covering layer 41 will be described as an example below. Figure 31 Yes Figure 28 is a preparation flow chart of an implementation manner of the charging coil module 1 shown. Figure 32 Yes Figure 31 is a structural schematic of some steps in the method for preparing the charging coil module 1 shown in some embodiments Figure 1 .

[0334] Please refer to Figure 31 and Figure 32 , in an implementation manner, in the step of forming the first covering layer 41 on the first coil 12 of the charging coil 10 and the first wiring layer 22 of the circuit board 20, it includes:

[0335] S141: Form a first sub-insulating layer 241 on the first wiring layer 224 of the second part 202 of the circuit board 20. Among them, the first sub-insulating layer 241 covers at least part of the first wiring layer 224 of the second part 202 of the circuit board 20. It is understandable that the setting of the first sub-insulating layer 241 can refer to the setting of the first sub-insulating layer 241 of the charging coil module 1 above. Specifically, it will not be elaborated here.

[0336] S142: Form a second sub-insulating layer 242 on the first wiring layer 223 of the first part 201 of the circuit board 20, and a part of the second sub-insulating layer 242 overlaps on the first sub-insulating layer 241. Among them, the second sub-insulating layer 242 can cover the first wiring layer 223 of the first part 201, the space between the first wiring layer 223 of the first part 201 and the first sub-insulating layer 241, and part of the first sub-insulating layer 241.

[0337] It is understandable that the setting of the second sub-insulating layer 242 can refer to the setting of the second sub-insulating layer 242 of the charging coil module 1 above. Specifically, it will not be elaborated here.

[0338] S143: Form a third sub-insulating layer 243 on the first wiring layer 225 of the third part 203 of the circuit board 20, and a part of the third sub-insulating layer 243 overlaps on the first sub-insulating layer 241. It is understandable that this step can refer to step S242. Specifically, it will not be elaborated here.

[0339] S144: Press the first sub-insulating layer 241, the second sub-insulating layer 242, and the third sub-insulating layer 243.

[0340] In one embodiment, a hot pressing process is adopted. The hot pressing temperature can be in the range of 150°C to 200°C, and the hot pressing time can be in the range of 0.5 hour (unit: h) to 3 hours (h).

[0341] In one embodiment, a pressure transmission process is adopted. The pressure transmission temperature can be in the range of 170°C to 190°C, and the pressure transmission time can be in the range of 0.5 hour (unit: h) to 3 hours (h). For example, the pressure transmission time can be 2 hours. The pressure can be in the range of 350 N / cm 2 to 450 N / cm 2 range.

[0342] In one embodiment, a quick pressing process is adopted. The quick pressing temperature can be in the range of 170°C to 190°C, and the quick pressing time can be in the range of 1 minute (unit: min) to 8 minutes (unit: min). Exemplarily, the quick pressing time can be in the range of 2 min to 3 min. Additionally, the pressure can be in the range of 100 N / cm 2 to 150 N / cm 2 range. The baking temperature can be in the range of 160°C to 180°C, and the baking time can be in the range of 1 hour (unit: h) to 3 hours (h). Exemplarily, the baking time can be 2 hours.

[0343] In other embodiments, a vacuum pressing process can also be adopted to press the first sub-insulating layer 241, the second sub-insulating layer 242, and the third sub-insulating layer 243. Details are not elaborated here.

[0344] In one embodiment, after the step of forming the first sub-insulating layer 241 on the first trace layer 224 of the second part 202 of the circuit board 20, the first sub-insulating layer 241 is first laminated through the first lamination process. After the steps of forming the second sub-insulating layer 242 on the first trace layer 223 of the first part 201 of the circuit board 20 and forming the third sub-insulating layer 243 on the first trace layer 225 of the third part 203 of the circuit board 20, the second sub-insulating layer 242 and the third sub-insulating layer 243 are then laminated through the second lamination process. For example, the temperature of the two lamination processes can be in the range of 175°C to 190°C, and the hot pressing time can be in the range of 0.5 hour (unit: h) to 3 hours (h). It can be understood that in this embodiment, two lamination processes are adopted. For the above-mentioned one-time lamination process, the mass production delamination risk of hot pressing the first sub-insulating layer 241, the second sub-insulating layer 242, and the third sub-insulating layer 243 twice can be reduced. In addition, it is possible to avoid the neutral line shift caused by the vitrification transformation of the first sub-insulating layer 241, the second sub-insulating layer 242, and the third sub-insulating layer 243 at high temperatures multiple times, thereby resulting in the loss of protection for the first trace layer 22 during the folding process.

[0345] Form a first nanocrystalline layer 16 on the first insulating layer 14 of the charging coil 10.

[0346] It can be understood that this step is the same as or similar to step S150 of the above embodiment. Specifically, it will not be elaborated here. Form a first graphite layer 17 on the first nanocrystalline layer 16.

[0347] It can be understood that this step is the same as or similar to step S160 of the above embodiment. Specifically, it will not be elaborated here.

[0348] It can be understood that the charging coil 10 of this embodiment may also include a second nanocrystalline layer and a second graphite layer. For the setting method and formation method of the second nanocrystalline layer and the second graphite layer, reference can be made to the setting method and formation method of the second nanocrystalline layer 18 and the second graphite layer 19 above. Specifically, it will not be elaborated here.

[0349] It should be noted that, without conflict, the features in the embodiments and implementation manners in this application can be combined with each other, and any combination of features in different implementation manners is also within the protection scope of this application. That is to say, the above-described multiple embodiments can also be arbitrarily combined according to actual needs.

[0350] It should be noted that all the above drawings are exemplary illustrations of this application and do not represent the actual size of the product. And the dimensional proportional relationship between the components in the drawings is not used as a limitation on the actual product of this application.

[0351] The above are only some embodiments and implementation manners of the present application. The protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present application, and all of them should be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A charging coil module (1), characterized in that, it includes a charging coil (10) and a circuit board (20); The charging coil (10) includes a substrate (11), a first coil (12) and a second coil (13), and the substrate (11) of the charging coil (10) is located between the first coil (12) and the second coil (13); The circuit board (20) includes a substrate (21), a first wiring layer (22) and a second wiring layer (23), and the substrate (21) of the circuit board (20) is located between the first wiring layer (22) and the second wiring layer (23); The substrate (21) of the circuit board (20) and the substrate (11) of the charging coil (10) are of an integrated structure, the first wiring layer (22) and the first coil (12) are arranged on the same layer, and the second wiring layer (23) and the second coil (13) are arranged on the same layer; The first coil (12) includes a first lead portion (121) and a first main body portion (122), the first lead portion (121) is connected to the output end of the first main body portion (122), the first lead portion (121) is located outside the first main body portion (122), and the first wiring layer (22) includes a first wiring (221), and the first wiring (221) and the first lead portion (121) are of an integrally formed structure.

2. The charging coil module (1) according to claim 1, characterized in that, The second wiring layer (23) includes a second wiring (231), and the second wiring (231) and the second coil (13) are of an integrally formed structure.

3. The charging coil module (1) according to claim 1 or 2, characterized in that, The charging coil (10) includes a first insulating layer (14), and the first insulating layer (14) of the charging coil (10) is provided on the first coil (12) and covers the first coil (12); The circuit board (20) includes a first insulating layer (24), and the first insulating layer (24) of the circuit board (20) is provided on the first wiring layer (22) and covers the first wiring layer (22); The first insulating layer (14) of the charging coil (10) and the first insulating layer (24) of the circuit board (20) are arranged on the same layer and are of an integrally formed structure.

4. The charging coil module (1) according to claim 1 or 2, characterized in that, In the length direction of the circuit board (20), the circuit board (20) includes a first part (201), a second part (202) and a third part (203) connected in sequence; when the first part (201) and the third part (203) are folded or unfolded relative to each other, the second part (202) is bent; The circuit board (20) includes a first sub-insulating layer (241), a second sub-insulating layer (242), and a third sub-insulating layer (243). The first sub-insulating layer (241) is disposed on the first wiring layer (224) of the second part (202), the second sub-insulating layer (242) is disposed on the first wiring layer (223) of the first part (201), and the third sub-insulating layer (243) is disposed on the first wiring layer (225) of the third part (203). The glass transition temperature of the first sub-insulating layer (241) is greater than the glass transition temperatures of the second sub-insulating layer (242) and the third sub-insulating layer (243).

5. The charging coil module (1) according to claim 4, wherein, the charging coil (10) includes a first insulating layer (14). The first insulating layer (14) of the charging coil (10) is disposed on the first coil (12) and covers the first coil (12). The first insulating layer (14) of the charging coil (10) and the second sub-insulating layer (242) are of an integrally formed structure; or the first insulating layer (14) of the charging coil (10) and the third sub-insulating layer (243) are of an integrally formed structure.

6. The charging coil module (1) according to claim 4 or 5, wherein, the glass transition temperature of the first sub-insulating layer (241) is greater than or equal to 90 °C, and the glass transition temperatures of the second sub-insulating layer (242) and the third sub-insulating layer (243) are both less than 90 °C.

7. The charging coil module (1) according to any one of claims 4 to 6, wherein, the thickness of the first adhesive layer (241b) of the first sub-insulating layer (241) is less than the thicknesses of the second adhesive layer (242b) of the second sub-insulating layer (242) and the third adhesive layer (243b) of the third sub-insulating layer (243).

8. The charging coil module (1) according to claim 7, wherein, the thickness of the first adhesive layer (241b) of the first sub-insulating layer (241) is less than 25 micrometers, and the thicknesses of the second adhesive layer (242b) of the second sub-insulating layer (242) and the third adhesive layer (243b) of the third sub-insulating layer (243) are greater than 25 micrometers.

9. The charging coil module (1) according to any one of claims 5 to 8, wherein, the thickness of the first wiring layer (224) of the second part (202) is less than the thicknesses of the first wiring layer (223) of the first part (201) and the first wiring layer (225) of the third part (203).

10. The charging coil module (1) according to claim 9, wherein, the first wiring layer (223) of the first part (201) is composed of three metal layers, and the second wiring of the second part (202) is composed of two metal layers. The first layer of metal (223a) of the first wiring layer (223) of the first part (201) is arranged on the same layer as the first layer of metal (224a) of the first wiring layer (224) of the second part (202), and they are of an integrally formed structure. The second layer of metal (223b) of the first wiring layer (223) of the first part (201) is arranged on the same layer as the second layer of metal (224b) of the first wiring layer (224) of the second part (202), and they are of an integrally formed structure.

11. The charging coil module (1) according to claim 9, characterized in that The distance d between the first sub-insulating layer (241) and the third layer of metal (223c) of the first trace layer (223) of the first part (201) 1 satisfies: 0.2 mm ≤ d 1 ≤ 0.5 mm.

12. The charging coil module (1) according to any one of claims 9 to 11, characterized in that A part of the second sub-insulating layer (242) overlaps the first sub-insulating layer (241); The width L of the portion of the second sub-insulating layer (242) disposed on the first sub-insulating layer (241) 1 satisfies: L 1 ≥ 0.05 mm.

13. The charging coil module (1) according to any one of claims 4 to 12, characterized in that The charging coil (10) includes a first nanocrystalline layer (16) and a first graphite layer (17), and the first nanocrystalline layer (16) and the first graphite layer (17) are sequentially stacked on the first insulating layer (14) of the charging coil (10).

14. The charging coil module (1) according to any one of claims 1 to 13, characterized in that The number of turns of the first coil (12) is greater than or equal to 2, and the distance between two adjacent turns in the first coil (12) is in the range of 40 micrometers to 100 micrometers.

15. The charging coil module (1) according to any one of claims 1 to 14, characterized in that Each turn of the first coil (12) includes a first conductive part (1222) and a second conductive part (1223), the first conductive part (1222) is arranged on the substrate (11) of the charging coil (10), and the second conductive part (1223) is formed on the first conductive part (1222) by electroplating.

16. An electronic device (100), characterized in that It includes a load (4) and the charging coil module (1) according to any one of claims 1 to 15, and the charging coil module (1) is electrically connected to the load (4).

17. A charger (200), characterized in that It includes the charging coil module (1) according to any one of claims 1 to 15.

18. A charging system (1000), characterized in that It includes an electronic device (100) and a charger (200), and at least one of the electronic device (100) and the charger (200) includes the charging coil module (1) according to any one of claims 1 to 15, and the charger (200) is used to charge the electronic device (100).

19. A preparation method of a charging coil module (1), characterized in that including: Prepare a double-sided board (30), wherein the double-sided board (30) includes a substrate (31), a first etching layer (32) and a second etching layer (33), and the substrate (31) of the double-sided board (30) is located between the first etching layer (32) and the second etching layer (33); Process the first etching layer (32) of the double-sided board (30) to form a first coil (12) of the charging coil (10) and a first wiring layer (22) of the circuit board (20). The first coil (12) includes a first lead portion (121) and a first main body portion (122). The first lead portion (121) is connected to the output end of the first main body portion (122). The first lead portion (121) is located outside the first main body portion (122). The first wiring layer (22) includes a first wiring (221), and the first wiring (221) and the first lead portion (121) are of an integrally formed structure; Process the second etching layer (33) of the double-sided board (30) to form a second coil (13) of the charging coil (10) and a second wiring layer (23) of the circuit board (20).

20. The method for preparing the charging coil module (1) according to claim 19, wherein, the second wiring layer (23) includes a second wiring (231), and the second wiring (231) and the second coil (13) are of an integrally formed structure.

21. The method for preparing the charging coil module (1) according to claim 19 or 20, wherein, the method further includes: forming a first covering layer (41) on the first coil (12) of the charging coil (10) and the first wiring layer (22) of the circuit board (20), and forming a second covering layer (42) on the second coil (13) of the charging coil (10) and the second wiring layer (23) of the circuit board (20). The first covering layer (41) includes a first insulating layer (14) of the charging coil (10) and a first insulating layer (24) of the circuit board (20), and the second covering layer (42) includes a second insulating layer (15) of the charging coil (10) and a second insulating layer (25) of the circuit board (20).

22. The method for preparing the charging coil module (1) according to claim 19 or 20, wherein, in the length direction of the circuit board (20), the circuit board (20) includes a first part (201), a second part (202) and a third part (203) connected in sequence; when the first part (201) and the third part (203) are folded or unfolded relative to each other, the second part (202) is bent; the method further includes: forming a first sub-insulating layer (241) on the first wiring layer (224) of the second part (202) of the circuit board (20); A second sub-insulating layer (242) is formed on the first trace layer (223) of the first part (201) of the circuit board (20), and a part of the second sub-insulating layer (242) overlaps on the first sub-insulating layer (241), wherein the glass transition temperature of the first sub-insulating layer (241) is greater than the glass transition temperature of the second sub-insulating layer (242); A third sub-insulating layer (243) is formed on the first trace layer (225) of the third part (203) of the circuit board (20), and a part of the third sub-insulating layer (243) overlaps on the first sub-insulating layer (241), wherein the glass transition temperature of the first sub-insulating layer (241) is greater than the glass transition temperature of the third sub-insulating layer (243); Press the first sub-insulating layer (241), the second sub-insulating layer (242) and the third sub-insulating layer (243).

23. The preparation method of the charging coil module (1) according to claim 22, characterized in that, The pressing is a hot pressing process, the hot pressing temperature of the hot pressing process is in the range of 150 °C to 200 °C, and the hot pressing time of the hot pressing process is in the range of 0.5 hour to 3 hours; Or, the pressing is a pressure transfer process, the pressure transfer temperature of the pressure transfer process is in the range of 170 °C to 190 °C, and the hot pressing time of the pressure transfer process is in the range of 0.5 hour to 3 hours; Or, the pressing is a quick pressing process, the quick pressing temperature of the quick pressing process is in the range of 170 °C to 190 °C, and the quick pressing time of the quick pressing process is in the range of 1 minute to 8 minutes.

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