Electro-optical components

Abstract

The present invention provides an electro-optical element, comprising: a substrate; a waveguide, which is arranged on the substrate and on which a tunable material layer and a polarization material layer are arranged, and the waveguide is configured to receive an optical signal input from the outside; the tunable material layer, and the optical signal interacts with the tunable material layer to change the optical properties of the optical signal; the polarization material layer is configured to generate a plurality of polarization fields with different polarization directions based on different externally applied excitations, and the plurality of polarization fields include a first-direction polarization field and a second-direction polarization field, and the material properties of a region aligned with the first-direction polarization field and a region aligned with the second-direction polarization field in the tunable material layer are changed to achieve at least one of detection and modulation of the optical signal.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic technology, and more specifically, to an electro-optical element. Background Art

[0002] With the massive emergence and rapid development of Internet applications, the massive amount of data generated is transmitted within and between the user end, enterprise end, data center end and cloud end, which inevitably requires the use of modulators and photodetectors for data processing. The modulator can carry the coded information contained in the signal onto the optical signal to achieve signal conversion and transmit the signal at a higher speed. Photodetectors usually serve as the receiving end to convert optical signals into electrical signals. With the development of optical communication technology towards short-distance interconnection and on-chip interconnection, it is required to use low-energy consumption, high-modulation efficiency modulators and photodetectors with fast response speed, high sensitivity and high responsiveness in optical links. Summary of the invention

[0003] In view of this, in order to solve at least one of the technical problems in the prior art, an embodiment of the present invention provides an electro-optical element that can realize non-volatile and reconfigurable control of material properties of tunable materials, such as electrons or holes, and realize at least one of detection and modulation of optical signals.

[0004] According to the inventive concept of one aspect of the present invention, there is provided an electro-optical element, comprising: a substrate; a waveguide, arranged on the substrate, a tunable material layer and a polarization material layer being arranged on the waveguide, the waveguide being configured to receive an optical signal input from the outside; the tunable material layer, the optical signal interacting with the tunable material layer to change the optical properties of the optical signal; the polarization material layer being configured to generate a plurality of polarization fields with different polarization directions based on different externally applied excitations, the plurality of polarization fields comprising a first direction polarization field and a second direction polarization field, the material properties of a region aligned with the first direction polarization field and a region aligned with the second direction polarization field in the tunable material layer being changed to achieve at least one of detection and modulation of the optical signal.

[0005] Optionally, the above-mentioned material properties include at least one of the following: thermal properties, mechanical properties, and chemical properties.

[0006] Optionally, the tunable material layer is disposed on the waveguide, and the polarization material layer is disposed on the tunable material layer; or, the polarization material layer is disposed on the waveguide, and the tunable material layer is disposed on the polarization material layer.

[0007] Optionally, the electro-optical element further includes: a first insulating layer, arranged between the waveguide and the tunable material layer or between the waveguide and the polarization material layer to achieve electrical insulation.

[0008] Optionally, the polarization material layer includes: a polarization zone, which is configured to generate the first direction polarization field and the second direction polarization field based on different external excitations; an unpolarized zone, which is arranged between the first direction polarization field and the second direction polarization field to form carriers of different concentrations in the tunable material layer, thereby forming different semiconductor junctions in the tunable material layer. Under the action of external excitation, the refractive index and optical absorption coefficient of the tunable material layer change, thereby realizing modulation of the optical signal.

[0009] Optionally, the tunable material layer is arranged on the waveguide, the polarization material layer is arranged on the tunable material layer, and the electro-optical element further includes: a covering layer arranged on the polarization material layer; and a second insulating layer arranged between the polarization material layer and the covering layer to achieve electrical insulation between the polarization material layer and the covering layer.

[0010] Optionally, the capping layer is located above a region of a semiconductor junction in the tunable material layer or the capping layer is located above the polarization region.

[0011] Optionally, the waveguide includes any one of the following: a rectangular waveguide, a strip waveguide, a ridge waveguide, a slab waveguide and a slot waveguide.

[0012] Optionally, the slit waveguide includes: a first waveguide, which is N-type doped so that holes are accumulated in the region above the first waveguide in the tunable material layer; a second waveguide, which is P-type doped so that electrons are accumulated in the region above the second waveguide in the tunable material layer; and a slit intermediate layer, which is arranged between the first waveguide and the second waveguide so as to localize the optical signal between the first waveguide and the second waveguide.

[0013] Optionally, the tunable material layer includes: a first tunable material layer, which is arranged in a region aligned with the first direction polarization field, and the first tunable material layer is configured to accumulate holes under the action of the first direction polarization field; a second tunable material layer, which is arranged in a region aligned with the second direction polarization field, the material of the second tunable material layer is different from that of the first tunable material layer, and the second tunable material layer is configured to accumulate electrons or holes under the action of the second direction polarization field to form a heterojunction on the surface where the first tunable material layer and the second tunable material layer are in contact.

[0014] According to an electro-optical element of an embodiment of the present invention, a waveguide is arranged on a substrate, a tunable material layer and a polarization material layer are arranged on the waveguide, the waveguide receives and transmits an optical signal input from the outside, the optical signal interacts with the tunable material layer to change the optical properties of the optical signal, the polarization material layer is constructed to generate multiple polarization fields with different polarization directions based on different external excitations, and the tunable material properties can be regulated, the multiple polarization fields include a first direction polarization field and a second direction polarization field, and the material properties of the region aligned with the first direction polarization field and the region aligned with the second direction polarization field in the tunable material layer are changed to achieve at least one of the detection and modulation of the optical signal. The non-volatile and reconfigurable first direction polarization field and the second direction polarization field can be used to achieve non-volatile and reconfigurable regulation of the material properties of the tunable material, such as non-volatile and reconfigurable doping of electrons or holes therein, to achieve at least one of the detection and modulation of the optical signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0016] Figure 1 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention;

[0017] Figure 2 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which a polarization material layer is disposed on a waveguide and a tunable material layer is disposed on the polarization material layer;

[0018] Figure 3 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, wherein the polarization material layer includes a polarization region and an unpolarization region;

[0019] Figure 4 is a cross-sectional view of an electro-optical element in which a polarization material layer includes a polarization region and an unpolarization region according to another embodiment of the present invention;

[0020] Figure 5 is a cross-sectional view showing that a cover layer is disposed on a polarization material layer according to an embodiment of the present invention;

[0021] Figure 6 is a cross-sectional view of a cover layer disposed on a polarization material layer according to another embodiment of the present invention;

[0022] Figure 7 is a cross-sectional view of a cover layer located above a polarization region according to an embodiment of the present invention;

[0023] Figure 8 is a cross-sectional view of a cover layer located above a polarization region according to another embodiment of the present invention;

[0024] Fig. 9 is a cross-sectional view when the waveguide of the electro-optical element according to one embodiment of the present invention is a ridge waveguide;

[0025] Fig.10 is a cross-sectional view of an electro-optical element according to another embodiment of the present invention when the waveguide is a ridge waveguide;

[0026] Fig.11 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which the waveguide is a ridge waveguide and the cover layer is located above the polarization material layer;

[0027] Fig.12 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which the waveguide is a ridge waveguide and the cover layer is located above the unpolarized region of the polarization material layer;

[0028] Fig.13 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which the waveguide is a planar waveguide and the cover layer is located above the polarization material layer;

[0029] Fig.14 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which the waveguide is a planar waveguide and the cover layer is located above the unpolarized region of the polarization material layer;

[0030] Fig.15 is a cross-sectional view when the waveguide of the electro-optical element according to one embodiment of the present invention is a slot waveguide;

[0031] Fig.16 is a cross-sectional view of a case where the waveguide of the electro-optical element according to another embodiment of the present invention is a slot waveguide;

[0032] Fig.17 is a cross-sectional view when the waveguide of the electro-optical element according to an embodiment of the present invention is a slot waveguide and the slot waveguide is of different doping types;

[0033] Fig.18 is a cross-sectional view of an electro-optical element according to another embodiment of the present invention when the waveguide is a slot waveguide and the slot waveguide is of different doping types;

[0034] Fig.19 is a cross-sectional view of a case where the waveguide of an electro-optical element according to still another embodiment of the present invention is a slot waveguide and the slot waveguide is of different doping types;

[0035] Fig. 20 is a cross-sectional view of a case where the waveguide of an electro-optical element according to an embodiment of the present invention is a ridge waveguide and the ridge waveguide is of different doping types;

[0036] Fig.21is a cross-sectional view of a tunable material layer composed of different materials according to an embodiment of the present invention;

[0037] Fig. 22 is a cross-sectional view of a tunable material layer composed of different materials according to another embodiment of the present invention.

[0038] In the drawings, the meanings of the reference numerals are as follows:

[0039] 1. Substrate;

[0040] 2. Waveguide;

[0041] 21. First waveguide;

[0042] 22. Second waveguide;

[0043] 23. Slit middle layer;

[0044] 24. Third waveguide;

[0045] 25. Fourth waveguide;

[0046] 3. Tunable material layer;

[0047] 31. A first tunable material layer;

[0048] 32. A second tunable material layer;

[0049] 4. Polarized material layer;

[0050] 41. Polarization field in the first direction;

[0051] 42. Second direction polarization field;

[0052] 43. Unpolarized region;

[0053] 5. The first insulating layer;

[0054] 6. Covering layer;

[0055] 7. Second insulation layer. DETAILED DESCRIPTION

[0056] At present, electro-optic modulators of low-dimensional materials regulate materials through electrostatic fields and control material properties by changing gate voltages. However, the modulation effect of this electrostatic field is volatile and requires continuous application of gate voltage to maintain. Photodetectors of low-dimensional materials detect light through electrostatic field doping or heterojunction structures constructed through heterogeneous integration. However, the electrostatic field doping effect is volatile and also requires continuous application of gate voltage for doping.

[0057] In order to solve the volatility of electrostatic field regulation of material properties, according to the inventive concept of one aspect of the present invention, a waveguide is arranged on a substrate, a tunable material layer and a polarization material layer are arranged on the waveguide, the waveguide receives and transmits an optical signal input from the outside, the optical signal interacts with the tunable material layer to change the optical properties of the optical signal, the polarization material layer is constructed to generate multiple polarization fields with different polarization directions based on different external excitations, and the properties of the tunable material can be regulated, the multiple polarization fields include a first direction polarization field and a second direction polarization field, and the regions aligned with the first direction polarization field and the regions aligned with the second direction polarization field in the tunable material layer change the material properties to achieve at least one of the detection and modulation of the optical signal. Through the non-volatile and reconfigurable first direction polarization field and the second direction polarization field, the properties of the tunable material can be non-volatile and reconfigurable regulated, for example, the non-volatile and reconfigurable doping of electrons or holes can achieve both modulation and detection of the optical signal.

[0058] Figure 1 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention.

[0059] An electro-optical element provided according to an embodiment of the present invention comprises a substrate 1, a waveguide 2, a tunable material layer 3 and a polarization material layer 4. Figure 1 As shown, the waveguide 2 is arranged on the substrate 1, and a tunable material layer 3 and a polarization material layer 4 are arranged on the waveguide 2. The waveguide 2 is configured to receive an optical signal input from the outside. The optical signal interacts with the tunable material layer 3 to change the optical properties of the optical signal. The polarization material layer 4 is configured to generate a plurality of polarization fields with different polarization directions based on different external excitations, and the plurality of polarization fields include a first direction polarization field 41 and a second direction polarization field 42. The material properties of the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3 are changed to achieve at least one of detection and modulation of the optical signal.

[0060] According to an embodiment of the present invention, the regions in the tunable material layer 3 aligned with the first-direction polarization field 41 and the regions aligned with the second-direction polarization field 42 change their material properties to different degrees and in different ways.

[0061] According to an embodiment of the present invention, the material property includes at least one of the following: thermal property, mechanical property, and chemical property.

[0062] According to an embodiment of the present invention, the thermal properties include but are not limited to thermal conductivity, the mechanical properties include but are not limited to elastic modulus, and the chemical properties include but are not limited to ion exchange performance.

[0063] An electro-optical element provided according to an embodiment of the present invention comprises a substrate 1, a waveguide 2, a tunable material layer 3 and a polarization material layer 4. Figure 1 As shown, the waveguide 2 is arranged on the substrate 1, and a tunable material layer 3 and a polarization material layer 4 are arranged on the waveguide 2. The waveguide 2 is configured to receive an optical signal input from the outside. The optical signal interacts with the tunable material layer 3 to form an electron-hole pair in the tunable material layer 3 or modulate the optical signal. The polarization material layer 4 is configured to generate a plurality of polarization fields with different polarization directions based on different external excitations, and the plurality of polarization fields include a first direction polarization field 41 and a second direction polarization field 42. Holes are accumulated in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and electrons are accumulated in the region aligned with the second direction polarization field 42 in the tunable material layer 3 to form different semiconductor junctions in the tunable material layer 3. Under the combined action of the built-in electric field in the semiconductor junction, or the built-in electric field and the externally applied voltage, the electrons and holes in the electron-hole pairs are separated to generate an electrical signal.

[0064] According to an embodiment of the present invention, the material of the substrate 1 may be a dielectric or semiconductor material, such as silicon, silicon dioxide, or silicon nitride.

[0065] According to an embodiment of the present invention, the material of the waveguide 2 may be selected from, for example, silicon, silicon nitride, silicon carbide, and semiconductor materials.

[0066] According to an embodiment of the present invention, the material of the polarization material layer 4 may be a polarizable material having at least two polarization states, such as a ferroelectric polymer (P(VDF-TrFE)), tin-telluride, M I M II P2X6 family (M I 、M II are two metal atoms, X is oxygen, sulfur, selenium, tellurium atom, such as CuInP2S6, etc.), M2X2Y6 family (M is a metal atom, X is silicon, germanium, tin atom, Y is sulfur, selenium, tellurium atom, such as Hf2Ge2Te6, etc.), lithium niobate (LiNbO3), potassium nitrate (KNO3), perovskite compound (KTa x Nb 1-x O3), perovskite oxide (Ba x Sr 1-x TiO3), perovskite-type compounds (SrBaNbO3), special perovskite-type compounds (K3Li2Nb5O 15 )、Potassium dihydrogen phosphate (KH2PO4), K x Na 1-x Sr y Ba 1-y-Nb2O6, potassium dihydrogen arsenate (KH2AsO4), ammonium dihydrogen phosphate (NH4H2PO4), ND4D2PO4, cesium-containing dihydrogen arsenate (RbH2AsO4), potassium titanate (KTiOPO4), potassium titanium arsenate (KTiOAsO4) and other materials.

[0067] According to an embodiment of the present invention, the material of the tunable material layer 3 may be a low-dimensional material or a semiconductor material, and the low-dimensional material includes a two-dimensional material or a one-dimensional material, such as graphene, transition metal sulfide and the like. Transition metal sulfides include but are not limited to molybdenum disulfide and molybdenum ditelluride. Semiconductor materials include but are not limited to indium selenide, indium phosphide and indium triselenide. The number of layers of the tunable material layer 3 may be a single layer or multiple layers, and may be formed by stacking one or more materials.

[0068] According to an embodiment of the present invention, the optical signal interacts with the tunable material layer 3, and the tunable material layer 3 absorbs the optical signal, thereby forming electron-hole pairs inside the tunable material of the tunable material layer 3, or the optical signal interacts with the tunable material layer 3, and parameters such as the amplitude and phase of the optical signal change under the influence of properties such as the complex refractive index (real part - refractive index and imaginary part - absorption coefficient) of the tunable material.

[0069] According to an embodiment of the present invention, any area of ​​the polarization material layer 4 can be selected for polarization. The polarization material layer 4 is constructed to have at least a first direction polarization field 41 and a second direction polarization field 42 with different polarization directions. The first direction polarization field 41 and the second direction polarization field 42 can polarize and control the material properties of the tunable material layer 3, such as carrier concentration or doping type.

[0070] According to an embodiment of the present invention, the polarization orientation and polarization intensity of the polarization material layer 4 can be regulated by applying voltage or light stimulation or other excitation to the polarization material layer 4 to generate a polarization field with different polarization directions.

[0071] According to an embodiment of the present invention, a waveguide 2 is disposed on a substrate 1, and a tunable material layer 3 and a polarization material layer 4 are disposed on the waveguide 2. The waveguide 2 receives and transmits an optical signal input from the outside, and the optical signal interacts with the tunable material layer 3, for example, electron-hole pairs are formed in the tunable material layer 3 or the optical signal is modulated. The polarization material layer 4 is constructed to have multiple polarization fields with different polarization directions, and the properties of the tunable material can be regulated. The multiple polarization fields include a first direction polarization field 41 and a second direction polarization field 42. For example, holes are accumulated in an area of ​​the tunable material layer 3 that is aligned with the first direction polarization field 41, and electrons are accumulated in an area of ​​the tunable material layer 3 that is aligned with the second direction polarization field 42, so as to form different semiconductor junctions in the tunable material layer 3. Under the action of a built-in electric field in the semiconductor junction, or a built-in electric field and an externally applied voltage, the electrons and holes in the electron-hole pairs are separated to generate electrical signals. The polarization material layer 4 is used as the gate of the electro-optical element. Through the non-volatile and reconfigurable first-direction polarization field 41 and the second-direction polarization field 42, the material properties of the tunable material can be non-volatile and reconfigurable regulated, and the tunable material can be continuously non-volatile and reconfigurable modulated. By applying an external voltage to the tunable material, the properties of the tunable material can be further modulated, thereby achieving both modulation and detection of optical signals.

[0072] According to an embodiment of the present invention, the tunable material layer 3 is disposed on the waveguide 2 , and the polarization material layer 4 is disposed on the tunable material layer 3 , or the polarization material layer 4 is disposed on the waveguide 2 , and the tunable material layer 3 is disposed on the polarization material layer 4 .

[0073] According to an embodiment of the present invention, the tunable material layer 3 and the polarization material layer 4 may be disposed below the waveguide 2 .

[0074] According to an embodiment of the present invention, Figure 1 As shown, the tunable material layer 3 is arranged on the waveguide 2, and the polarization material layer 4 is arranged on the tunable material layer 3. In the first direction, the polarization field 41 is in an upward direction (eg Figure 1 When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Figure 1In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes, for example, electrons accumulate in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. Since the material properties of the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3 are different, such as the carrier concentration, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function.

[0075] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, lateral voltage, light excitation, etc., the material properties of the tunable material, such as the refractive index, optical absorption coefficient, electrical conductivity and carrier mobility, are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the waveguide 2.

[0076] Figure 2 It is a cross-sectional view of an electro-optical element in which a polarization material layer 4 is disposed on a waveguide 2 and a tunable material layer 3 is disposed on the polarization material layer 4 according to an embodiment of the present invention.

[0077] According to an embodiment of the present invention, Figure 2 As shown, the polarization material layer 4 is arranged on the waveguide 2, and the tunable material layer 3 is arranged on the polarization material layer 4. In the first direction, the polarization field 41 is in the downward direction (eg Figure 2 When the polarization field 42 in the second direction is in the upward direction (as shown by the downward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Figure 2 In the case of polarization (as shown by the upward arrow in the figure), the tunable material properties undergo different changes, for example, electrons accumulate in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. Since the material properties of the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3 are different, such as the carrier concentration, NP / PP can be formed in the tunable material layer 3. + / N + P / N + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function.

[0078] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, lateral voltage, light excitation, etc., the material properties of the tunable material, such as the refractive index, optical absorption coefficient, and electrical conductivity, are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the waveguide 2.

[0079] According to an embodiment of the present invention, the electro-optical element further comprises a first insulating layer 5. Figure 1 As shown, the first insulating layer 5 is arranged between the waveguide 2 and the tunable material layer 3, or as shown in Figure 2 As shown, the first insulating layer 5 is arranged between the waveguide 2 and the polarization material layer 4 to achieve electrical insulation.

[0080] Figure 3 4 is a cross-sectional view of an electro-optical element in which the polarization material layer 4 includes a polarization region and an unpolarization region 43 according to an embodiment of the present invention.

[0081] According to an embodiment of the present invention, Figure 3 As shown, the polarization material layer 4 includes a polarization region and an unpolarized region 43. The polarization region is configured to generate a first direction polarization field 41 and a second direction polarization field 42 based on different external excitations. The unpolarized region 43 is arranged between the first direction polarization field 41 and the second direction polarization field 42 to form carriers of different concentrations in the tunable material layer 3, thereby forming different semiconductor junctions in the tunable material layer 3. Under the action of external excitation, the refractive index and optical absorption coefficient of the tunable material layer 3 change, thereby realizing modulation of the optical signal.

[0082] According to an embodiment of the present invention, the polarized region is a region with a relatively high polarization intensity, and the unpolarized region 43 is a region with a weak polarization intensity or no polarization.

[0083] According to an embodiment of the present invention, the tunable material layer 3 is disposed on the waveguide 2, and the polarization material layer 4 is disposed on the tunable material layer 3. In the first direction, the polarization field 41 is in an upward direction (eg Figure 3 When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Figure 3In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes, for example, electrons accumulate in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in this region increases. The polarized material in the unpolarized region 43 does not show a macroscopic polarization intensity, or the polarization intensity is lower than that in the polarized region, and the material properties of the region aligned with the unpolarized region 43 in the tunable material layer 3 do not change or change only slightly. Since the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the carrier concentration, are different, a P can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function.

[0084] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, lateral voltage, light excitation, etc., the material properties of the tunable material, such as the refractive index, optical absorption coefficient, and electrical conductivity, are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the waveguide 2.

[0085] Figure 4 4 is a cross-sectional view of an electro-optical element in which a polarization material layer includes a polarization region and an unpolarization region 43 according to another embodiment of the present invention.

[0086] According to an embodiment of the present invention, Figure 4 As shown, the polarization material layer 4 is arranged on the waveguide 2, and the tunable material layer 3 is arranged on the polarization material layer 4. In the first direction, the polarization field 41 is in the downward direction (eg Figure 4 When the polarization field 42 in the second direction is in the upward direction (as shown by the downward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Figure 4In the case of polarization (as indicated by the upward arrow in the figure), the tunable material properties undergo different changes, for example, electrons accumulate in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. The polarized material in the unpolarized region 43 does not show a macroscopic polarization intensity, or the polarization intensity is lower than that in the polarized region, and the material properties of the region aligned with the unpolarized region 43 in the tunable material layer 3 do not change or change only slightly. Since the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the carrier concentration, are different, NPP can be formed in the tunable material layer 3. + / NIP / N + NP / N + NP / N + IP + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function.

[0087] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, lateral voltage, light excitation, etc., the material properties of the tunable material, such as the refractive index, optical absorption coefficient, and electrical conductivity, are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the waveguide 2.

[0088] Figure 5 4 is a cross-sectional view showing a cover layer 6 disposed on a polarization material layer 4 according to an embodiment of the present invention. Figure 5 The electro-optical element of the embodiment shown is Figure 1 The electro-optical element of the embodiment shown is different in that Figure 1 A second insulating layer 7 and a covering layer 6 are arranged on the polarization material layer 4.

[0089] According to an embodiment of the present invention, Figure 5 As shown, the tunable material layer 3 is arranged on the waveguide 2, the polarization material layer 4 is arranged on the tunable material layer 3, and the electro-optical element further comprises a covering layer 6. The covering layer 6 is arranged on the polarization material layer 4. The second insulating layer 7 is arranged between the polarization material layer 4 and the covering layer 6 to achieve electrical insulation between the polarization material layer 4 and the covering layer 6.

[0090] According to an embodiment of the present invention, the material of the cover layer 6 can be metal, semiconductor material and dielectric material. Providing the cover layer 6 can enhance the local effect of the electro-optical element on the light field, reduce light leakage, and thus increase the light field in the polarization material layer 4 and the tunable material layer 3.

[0091] According to an embodiment of the present invention, providing a second insulating layer 7 between the polarization material layer 4 and the covering layer 6 can improve the interface contact between the polarization material layer 4 and the covering layer 6 to better grow the covering layer 6 while achieving electrical insulation between the polarization material layer 4 and the covering layer 6.

[0092] According to the embodiment of the present invention, since the material properties of the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3, such as the difference in carrier concentration, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function. The enhanced light field in the polarization material layer 4 and the tunable material layer 3 can achieve a stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0093] According to the embodiment of the present invention, external excitation is applied to the tunable material layer 3, such as strain, transverse voltage, optical excitation, etc., to further change the properties of the tunable material such as the complex refractive index, so as to modulate the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the waveguide 2. The enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0094] Figure 6 is a cross-sectional view showing a cover layer 6 disposed on a polarization material layer 4 according to another embodiment of the present invention. Figure 6 The electro-optical element of the embodiment shown is Figure 3 The electro-optical element of the embodiment shown is different in that Figure 3 A second insulating layer 7 and a covering layer 6 are arranged on the polarization material layer 4.

[0095] According to an embodiment of the present invention, Figure 6 As shown, due to the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the difference in carrier concentration, P can be formed in the tunable material layer 3. + PN / PIN / PNN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function. The enhanced light field in the polarization material layer 4 and the tunable material layer 3 can achieve a stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0096] According to the embodiment of the present invention, external excitation is applied to the tunable material layer 3, such as strain, transverse voltage, optical excitation, etc., to further change the properties of the tunable material such as the complex refractive index, so as to modulate the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the waveguide 2. The enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0097] Figure 7 is a cross-sectional view of a cover layer 6 located above a polarization region according to an embodiment of the present invention, Figure 7 The electro-optical element of the embodiment shown is Figure 5 The electro-optical element of the illustrated embodiment is different in that the position at which the cover layer 6 is provided is changed. Figure 8 is a cross-sectional view of a cover layer 6 located above a polarization region according to another embodiment of the present invention, Figure 8 The electro-optical element of the embodiment shown is Figure 6 The electro-optical element of the illustrated embodiment is different in that the position at which the cover layer 6 is provided is changed.

[0098] According to an embodiment of the present invention, Figure 5 and Figure 6 As shown, the cap layer 6 is located above the region of the semiconductor junction in the tunable material layer 3, or as shown in FIG. Figure 7 and Figure 8 As shown, a cover layer 6 is located above the polarization region.

[0099] According to an embodiment of the present invention, Figure 7 As shown, the covering layer 6 is located above the polarization zone, and the length of the cross section of the covering layer 6 may be different from the length of the cross section of the polarization zone.

[0100] According to an embodiment of the present invention, Figure 8 As shown, an unpolarized zone 43 is provided between the first direction polarization field 41 and the second direction polarization field 42, and the covering layer 6 is located above the polarization zone. The cross-sectional length of the covering layer 6 located above the polarization zones on both sides may be different from the cross-sectional length of the polarization zone.

[0101] According to an embodiment of the present invention, the waveguide 2 includes any one of the following: a rectangular waveguide, a strip waveguide, a ridge waveguide, a slab waveguide and a slot waveguide.

[0102] Fig. 9 1 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention when the waveguide 2 is a ridge waveguide. Fig. 9 The electro-optical element of the embodiment shown is Figure 1 The electro-optical element of the embodiment shown is different in that Figure 1 The waveguide 2 becomes a ridge waveguide.

[0103] According to an embodiment of the present invention, Fig. 9 As shown, in the first direction, the polarization field 41 is in an upward direction (such as Fig. 9 When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Fig. 9 In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes. For example, electrons accumulate in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. Since the carrier concentrations in the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3 are different, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function. By applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties such as the complex refractive index of the tunable material are further changed, and the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the ridge waveguide are modulated.

[0104] Fig.10 1 is a cross-sectional view of an electro-optical element according to another embodiment of the present invention when the waveguide 2 is a ridge waveguide. Fig.10 The electro-optical element of the embodiment shown is Figure 3 The electro-optical element of the embodiment shown is different in that Figure 3 The waveguide 2 becomes a ridge waveguide.

[0105] According to an embodiment of the present invention, Fig.10 As shown, in the first direction, the polarization field 41 is in an upward direction (such as Fig.10 When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Fig.10In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes, for example, electrons accumulate in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in this region increases. The polarized material in the unpolarized region 43 does not show a macroscopic polarization intensity, or the polarization intensity is lower than that in the polarized region, and the material properties of the region aligned with the unpolarized region 43 in the tunable material layer 3 do not change or change only slightly. Since the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the carrier concentration, are different, a P can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the ridge waveguide, that is, the photoelectric detection function. By applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties such as the complex refractive index of the tunable material are further changed, and the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the ridge waveguide are modulated.

[0106] Fig.11 4 is a cross-sectional view showing that the waveguide 2 of the electro-optical element according to an embodiment of the present invention is a ridge waveguide and the cover layer 6 is located above the polarization material layer 4 . Fig.11 The electro-optical element of the embodiment shown is Figure 5 The electro-optical element of the embodiment shown is different in that Figure 5 The waveguide 2 becomes a ridge waveguide.

[0107] According to an embodiment of the present invention, Fig.11 As shown, due to the difference in material properties, such as carrier concentration, between the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the ridge waveguide, that is, the photoelectric detection function. By arranging the cover layer 6 on the polarization material layer 4, the enhanced light field in the polarization material layer 4 and the tunable material layer 3 can achieve a stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0108] According to the embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties of the tunable material such as the complex refractive index are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the ridge waveguide. The enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0109] Fig.12 4 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which the waveguide 2 is a ridge waveguide and the cover layer 6 is located above the unpolarized region 43 of the polarization material layer 4 . Fig.12 The electro-optical element of the embodiment shown is Figure 6 The electro-optical element of the embodiment shown is different in that Figure 6 The waveguide 2 becomes a ridge waveguide.

[0110] According to an embodiment of the present invention, Fig.12 As shown, due to the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the difference in carrier concentration, P can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the ridge waveguide, that is, the photoelectric detection function. By arranging the cover layer 6 above the unpolarized region 43 of the polarization material layer 4, the enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve a stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0111] According to an embodiment of the present invention, external excitation is applied to the tunable material layer 3, such as strain, transverse voltage, optical excitation, etc., to further change the properties of the tunable material such as the complex refractive index, so as to achieve electro-optical modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the ridge waveguide. The enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0112] Fig.13 4 is a cross-sectional view showing that the waveguide 2 of the electro-optical element according to an embodiment of the present invention is a planar waveguide and the cover layer 6 is located above the polarization material layer 4 . Fig.13 The electro-optical element of the embodiment shown is Figure 5The electro-optical element of the embodiment shown is different in that Figure 5 The waveguide 2 becomes a planar waveguide.

[0113] According to an embodiment of the present invention, Fig.13 As shown, due to the difference in material properties, such as carrier concentration, between the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the planar waveguide, that is, the photoelectric detection function. By arranging the cover layer 6 on the polarization material layer 4, the enhanced light field in the polarization material layer 4 and the tunable material layer 3 can achieve a stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0114] According to the embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties of the tunable material such as the complex refractive index are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the planar waveguide. The enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0115] Fig.14 4 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention, in which the waveguide 2 is a planar waveguide and the cover layer 6 is located above the unpolarized region 43 of the polarization material layer 4 . Fig.14 The electro-optical element of the embodiment shown is Figure 6 The electro-optical element of the embodiment shown is different in that Figure 6 The waveguide 2 becomes a planar waveguide.

[0116] According to an embodiment of the present invention, Fig.14 As shown, due to the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the difference in carrier concentration, P can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN +At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the planar waveguide, that is, the photoelectric detection function. By arranging the cover layer 6 above the unpolarized region 43 of the polarization material layer 4, the enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve a stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0117] According to the embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties of the tunable material such as the complex refractive index are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the planar waveguide. The enhanced optical field in the polarization material layer 4 and the tunable material layer 3 can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0118] Fig.15 1 is a cross-sectional view of an electro-optical element according to an embodiment of the present invention when the waveguide 2 is a slot waveguide. Fig.15 The electro-optical element of the embodiment shown is Figure 1 The electro-optical element of the embodiment shown is different in that Figure 1 The waveguide 2 becomes a slot waveguide.

[0119] According to an embodiment of the present invention, the slot waveguide may be Fig.15 The partially etched form shown, that is, the slot intermediate layer 23 does not penetrate the bottom of the slot waveguide. The slot waveguide can also be in a completely etched form, that is, the slot intermediate layer 23 penetrates the bottom of the slot waveguide, so that the left and right sides of the slot waveguide are separated.

[0120] According to the embodiment of the present invention, the slot waveguide has a strong binding ability for the light field and can bind the light field in the slot intermediate layer 23 of the slot waveguide, so that the light field in the slot intermediate layer 23 is significantly enhanced.

[0121] According to an embodiment of the present invention, Fig.15 As shown, due to the difference in material properties, such as carrier concentration, between the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the slit waveguide, that is, the photoelectric detection function. The local optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0122] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties of the tunable material such as the complex refractive index are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the slit waveguide. The localized optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0123] Fig.16 2 is a cross-sectional view of an electro-optical element according to another embodiment of the present invention when the waveguide 2 is a slot waveguide. Fig.16 The electro-optical element of the embodiment shown is Figure 3 The electro-optical element of the embodiment shown is different in that Figure 3 The waveguide 2 becomes a slot waveguide.

[0124] According to an embodiment of the present invention, Fig.16 As shown, due to the material properties of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the region aligned with the unpolarized region 43 in the tunable material layer 3, such as the difference in carrier concentration, P can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the slit waveguide, that is, the photoelectric detection function. The local optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0125] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties of the tunable material such as the complex refractive index are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the slit waveguide. The localized optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby improving the modulation efficiency of the electro-optical element.

[0126] Fig.17 It is a cross-sectional view when the waveguide 2 of the electro-optical element according to an embodiment of the present invention is a slot waveguide and the slot waveguide is of different doping types. Fig.17The electro-optical element of the embodiment shown is Figure 1 The electro-optical element of the embodiment shown is different in that Figure 1 Waveguide 2 is changed into a slot waveguide and the slot waveguide has a different doping type.

[0127] According to an embodiment of the present invention, Fig.17 As shown, the slot waveguide includes a first waveguide 21, a second waveguide 22 and a slot intermediate layer 23. The first waveguide 21 is N-type doped so that holes are accumulated in the region above the first waveguide 21 in the tunable material layer 3. The second waveguide 22 is P-type doped so that electrons are accumulated in the region above the second waveguide 22 in the tunable material layer 3. The slot intermediate layer 23 is disposed between the first waveguide 21 and the second waveguide 22 to localize the optical signal between the first waveguide 21 and the second waveguide 22.

[0128] According to an embodiment of the present invention, in the first direction, the polarization field 41 is in an upward direction (eg Fig.17 When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Fig.17 In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes. For example, electrons are accumulated in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. The first waveguide 21 is N-type doped, so that holes are further accumulated in the region above the first waveguide 21 in the tunable material layer 3. The second waveguide 22 is P-type doped, so that electrons are further accumulated in the region above the second waveguide 22 in the tunable material layer 3. Since the carrier concentrations in the region aligned with the first direction polarization field 41 and the region aligned with the second direction polarization field 42 in the tunable material layer 3 are different, a PN / P + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the slit waveguide, that is, the photoelectric detection function. The first waveguide 21 is N-type doped and the second waveguide 22 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3, and the local light field enhancement effect of the slit waveguide can locally enhance the light field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0129] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties of the tunable material such as the complex refractive index are further changed, so as to achieve electro-optical modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the slit waveguide. The first waveguide 21 is N-type doped and the second waveguide 22 is P-type doped, which can further enhance the degree of property change in the tunable material layer 3. At the same time, the local optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger light-matter interaction, thereby improving the modulation efficiency of the electro-optical element.

[0130] Fig.18 It is a cross-sectional view of an electro-optical element according to another embodiment of the present invention when the waveguide 2 is a slot waveguide and the slot waveguide is of different doping types. Fig.18 The electro-optical element of the embodiment shown is Figure 3 The electro-optical element of the embodiment shown is different in that Figure 3 Waveguide 2 is changed into a slot waveguide and the slot waveguide has a different doping type.

[0131] According to an embodiment of the present invention, in the first direction, the polarization field 41 is in an upward direction (eg Fig.18 When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Fig.18 In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes. For example, electrons are accumulated in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. The polarized material in the unpolarized region 43 does not show a macroscopic polarization intensity, or the polarization intensity is lower than that in the polarized region, and the material properties of the region aligned with the unpolarized region 43 in the tunable material layer 3 do not change or change only slightly. The first waveguide 21 is N-type doped so that holes are further accumulated in the region above the first waveguide 21 in the tunable material layer 3. The second waveguide 22 is P-type doped so that electrons are further accumulated in the region above the second waveguide 22 in the tunable material layer 3, and the hole or electron doping concentration in the tunable material layer 3 is further regulated. Since there are differences in the carrier concentrations of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the unpolarized region 43 in the tunable material layer 3, a P-type doped region can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN +At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the slit waveguide, that is, the photoelectric detection function. The first waveguide 21 is N-type doped and the second waveguide 22 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3, and the local light field enhancement effect of the slit waveguide can locally enhance the light field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0132] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., the properties such as the complex refractive index of the tunable material are further changed, so as to achieve modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the slit waveguide. The first waveguide 21 is N-type doped and the second waveguide 22 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3. At the same time, the local optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger light-matter interaction, thereby improving the modulation efficiency of the electro-optical element.

[0133] Fig.19 It is a cross-sectional view of an electro-optical element according to another embodiment of the present invention when the waveguide 2 is a slot waveguide and the slot waveguide is of different doping types. Fig.19 The electro-optical element of the embodiment shown is Fig.18 The electro-optical element of the embodiment shown is different in that Fig.18 The electro-optical element of the illustrated embodiment is provided with a plurality of unpolarized regions 43 on its basis.

[0134] According to an embodiment of the present invention, the first directional polarization field 41 is located above the first waveguide 21, and the length of its cross section is less than Fig.18 In the embodiment shown, the length of the cross section of the first direction polarization field 41 is when the first direction polarization field 41 is in the upward direction (eg Fig.19 When the polarization field 42 is in the first direction (indicated by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. The second direction polarization field 42 is located above the second waveguide 22, and the length of its cross section is less than Fig.18 In the embodiment shown, the length of the cross section of the second direction polarization field 42 is when the second direction polarization field 42 is in the downward direction (eg Fig.19In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes. For example, electrons are accumulated in the region aligned with the second direction polarization field 42 in the tunable material layer 3, and the electron concentration in the region increases. The polarized material in the unpolarized region 43 does not show a macroscopic polarization intensity, or the polarization intensity is lower than that in the polarized region, and the material properties of the region aligned with the unpolarized region 43 in the tunable material layer 3 do not change or change slightly. The first waveguide 21 is N-type doped so that holes are further accumulated in the region above the first waveguide 21 in the tunable material layer 3. The second waveguide 22 is P-type doped so that electrons are further accumulated in the region above the second waveguide 22 in the tunable material layer 3, and the hole or electron doping concentration in the tunable material layer 3 is further regulated. Since there are differences in the carrier concentrations of the region aligned with the first direction polarization field 41, the region aligned with the second direction polarization field 42, and the unpolarized region 43 in the tunable material layer 3, a P-type doped region can be formed in the tunable material layer 3. + PN / PIN / PNN + / P + NN + / P + IN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the slit waveguide, that is, the photoelectric detection function. The first waveguide 21 is N-type doped and the second waveguide 22 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3, and the local light field enhancement effect of the slit waveguide can locally enhance the light field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger interaction between light and matter, thereby enhancing the optical response of the electro-optical element.

[0135] According to an embodiment of the present invention, external excitation is applied to the tunable material layer 3, such as applying strain, transverse voltage, optical excitation, etc., to further change the properties of the complex refractive index of the tunable material, so as to achieve electro-optical modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the slit waveguide. The first waveguide 21 is N-type doped and the second waveguide 22 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3. At the same time, the local optical field enhancement effect of the slit waveguide can locally enhance the optical field in the tunable material layer 3 and the polarization material layer 4, and can achieve stronger light-matter interaction, thereby improving the modulation efficiency of the electro-optical element.

[0136] Fig. 20 It is a cross-sectional view when the waveguide 2 of the electro-optical element according to an embodiment of the present invention is a ridge waveguide and the ridge waveguide is of different doping types.

[0137] According to an embodiment of the present invention, in the first direction, the polarization field 41 is in an upward direction (eg Fig. 20When the polarization field 42 in the second direction is in the downward direction (as shown by the upward arrow in the figure), the tunable material properties change. For example, holes accumulate in the region aligned with the first direction polarization field 41 in the tunable material layer 3, and the hole concentration in the region increases. Fig. 20 In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes, for example, electrons are accumulated in the region of the tunable material layer 3 that is aligned with the second direction polarization field 42, and the electron concentration in the region increases. The third waveguide 24 is N-type doped, so that holes are further accumulated in the region above the third waveguide 24 in the tunable material layer 3. The fourth waveguide 25 is P-type doped, so that electrons are further accumulated in the region above the fourth waveguide 25 in the tunable material layer 3, and the hole or electron doping concentration in the tunable material layer 3 is further regulated. Since the carrier concentrations in the region of the tunable material layer 3 that is aligned with the first direction polarization field 41 and the region that is aligned with the second direction polarization field 42 are different, a PN / P can be formed in the tunable material layer 3. + P / PN + / NN + At the same time, the homojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the ridge waveguide, that is, the photoelectric detection function. The third waveguide 24 is N-type doped and the fourth waveguide 25 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3 and improve the photoelectric response of the electro-optical element.

[0138] According to an embodiment of the present invention, external excitation is applied to the tunable material layer 3, such as strain, transverse voltage, optical excitation, etc., to further change the properties of the complex refractive index of the tunable material, so as to achieve electro-optical modulation of the intensity, phase, frequency, polarization, angular momentum and other parameters of the optical signal in the ridge waveguide. The third waveguide 24 is N-type doped and the fourth waveguide 25 is P-type doped, which can further increase the carrier concentration in the tunable material layer 3 and improve the modulation efficiency of the electro-optical element.

[0139] Fig.21 is a cross-sectional view of a tunable material layer 3 composed of different materials according to an embodiment of the present invention. Fig.21 The electro-optical element of the embodiment shown is Figure 1 The electro-optical element of the illustrated embodiment is different in that the tunable material layer 3 is composed of different materials.

[0140] According to an embodiment of the present invention, Fig.21As shown, the tunable material layer 3 includes a first tunable material layer 31 and a second tunable material layer 32. The first tunable material layer 31 is arranged in a region aligned with the first direction polarization field 41, and the first tunable material layer 31 is configured to accumulate holes under the action of the first direction polarization field 41. The second tunable material layer 32 is arranged in a region aligned with the second direction polarization field 42, and the material of the second tunable material layer 32 is different from that of the first tunable material layer 31, and the second tunable material layer 32 is configured to accumulate electrons under the action of the second direction polarization field 42, so as to form a heterojunction on the surface where the first tunable material layer 31 and the second tunable material layer 32 contact.

[0141] According to an embodiment of the present invention, the materials of the first tunable material layer 31 and the second tunable material layer 32 each include at least one of the following: graphene, transition metal sulfide, semiconductor material, and dielectric material.

[0142] According to an embodiment of the present invention, in the first direction, the polarization field 41 is in an upward direction (eg Fig.21 In the case of polarization of the first tunable material layer 31 (as shown by the upward arrow in the figure), the tunable material properties change, for example, the first tunable material layer 31 accumulates holes, and the hole concentration in the first tunable material layer 31 increases. Fig.21 In the case of polarization (as shown by the downward arrow in the figure), the tunable material properties undergo different changes. For example, the second tunable material layer 32 accumulates electrons, and the electron concentration in the second tunable material layer 32 increases. Due to the difference in energy bands and properties of different materials between the first tunable material layer 31 and the second tunable material layer 32, a P is formed on the surface where the first tunable material layer 31 and the second tunable material layer 32 contact. + P / PN / PN + / NN + The optical signal transmitted in the waveguide 2 is partially coupled to the tunable material layer 3 and the polarization material layer 4. The waveguide 2 includes rectangular waveguides, strip waveguides, ridge waveguides, slab waveguides, and slot waveguides.

[0143] Fig. 22 is a cross-sectional view of a case where the tunable material layer 3 is composed of different materials according to another embodiment of the present invention. Fig. 22 The electro-optical element of the embodiment shown is Fig.21 The electro-optical elements of the illustrated embodiments differ in that the polarization directions of the second directional polarization field 42 are different.

[0144] According to an embodiment of the present invention, Fig. 22As shown, the tunable material layer 3 includes a first tunable material layer 31 and a second tunable material layer 32. The first tunable material layer 31 is arranged in a region aligned with the first direction polarization field 41, and the first tunable material layer 31 is configured to accumulate holes under the action of the first direction polarization field 41. The second tunable material layer 32 is arranged in a region aligned with the second direction polarization field 42, and the material of the second tunable material layer 32 is different from that of the first tunable material layer 31, and the second tunable material layer 32 is configured to accumulate holes under the action of the second direction polarization field 42, so as to form a heterojunction on the surface where the first tunable material layer 31 and the second tunable material layer 32 contact.

[0145] According to an embodiment of the present invention, the polarization intensities of the first direction polarization field 41 and the second direction polarization field 42 may be the same or different. In the first direction polarization field 41, the polarization intensities of the first direction polarization field 41 and the second direction polarization field 42 may be the same or different. Fig. 22 In the case of polarization of the first tunable material layer 31 (as shown by the upward arrow on the left side of the figure), the tunable material properties change, for example, the first tunable material layer 31 accumulates holes, and the hole concentration in the first tunable material layer 31 increases. Fig. 22 In the case of polarization (indicated by the upward arrow on the right side of the figure), the tunable material properties undergo different changes, for example, the second tunable material layer 32 accumulates holes, and the hole concentration in the second tunable material layer 32 increases. Due to the difference in energy bands and properties of different materials between the first tunable material layer 31 and the second tunable material layer 32, and the difference between the first direction polarization field 41 and the second direction polarization field 42, a PP is formed on the surface where the first tunable material layer 31 and the second tunable material layer 32 contact. + / PN / P + P / P + N / NP / NP + At the same time, the heterojunction formed in the tunable material layer 3 can respond to the optical signal, and can detect the optical signal transmitted in the waveguide 2, that is, the photoelectric detection function.

[0146] According to an embodiment of the present invention, by applying external excitation to the tunable material layer 3, such as applying strain, lateral voltage, optical excitation, etc., the properties such as the complex refractive index of the tunable material are further changed, so as to realize electro-optical modulation of parameters such as the intensity, phase, frequency, polarization, angular momentum, etc. of the optical signal in the waveguide.

[0147] The embodiments of the present invention are described above. However, these embodiments are only for the purpose of illustration, and are not intended to limit the scope of the present invention. Although each embodiment is described above, it does not mean that the measures in each embodiment cannot be used in combination. The scope of the present invention is defined by the attached claims and their equivalents. Without departing from the scope of the present invention, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present invention.

Claims

1. An electro-optical element, characterized in that: include: substrate; A waveguide, disposed on the substrate, wherein a tunable material layer and a polarization material layer are disposed on the waveguide, and the waveguide is configured to receive an optical signal input from the outside; the tunable material layer, the optical signal interacting with the tunable material layer to change the optical properties of the optical signal; The polarization material layer is configured to generate a plurality of polarization fields with different polarization directions based on different external excitations, the plurality of polarization fields including a first direction polarization field and a second direction polarization field, and the material properties of the region aligned with the first direction polarization field and the region aligned with the second direction polarization field in the tunable material layer are changed to achieve at least one of detection and modulation of the optical signal; The waveguide comprises a ridge waveguide, the ridge waveguide comprising: a third waveguide, the third waveguide being N-type doped so as to allow hole accumulation in a region above the third waveguide in the tunable material layer; The fourth waveguide is P-type doped so that electrons are accumulated in a region above the fourth waveguide in the tunable material layer.

2. The electro-optical element according to claim 1, characterized in that The material properties include at least one of the following: thermal properties, mechanical properties, and chemical properties.

3. The electro-optical element according to claim 1, characterized in that The tunable material layer is disposed on the waveguide, and the polarization material layer is disposed on the tunable material layer. Alternatively, the polarization material layer is disposed on the waveguide, and the tunable material layer is disposed on the polarization material layer.

4. The electro-optical element according to claim 3, characterized in that Also includes: A first insulating layer is disposed between the waveguide and the tunable material layer or between the waveguide and the polarization material layer to achieve electrical insulation.

5. The electro-optical element according to claim 3, characterized in that The polarization material layer comprises: A polarization region, configured to generate the first-direction polarization field and the second-direction polarization field based on different externally applied excitations; An unpolarized region is disposed between the first-direction polarization field and the second-direction polarization field to form carriers of different concentrations in the tunable material layer, thereby forming different semiconductor junctions in the tunable material layer; Under the action of external excitation, the refractive index and optical absorption coefficient of the tunable material layer change, thereby achieving modulation of the optical signal.

6. The electro-optical element according to claim 5, characterized in that The tunable material layer is disposed on the waveguide, and the polarization material layer is disposed on the tunable material layer. The electro-optical element further comprises: A covering layer, disposed on the polarization material layer; The second insulating layer is arranged between the polarization material layer and the covering layer to achieve electrical insulation between the polarization material layer and the covering layer.

7. The electro-optical element according to claim 6, characterized in that The capping layer is located above the region of the semiconductor junction in the tunable material layer or the capping layer is located above the polarization region.

8. An electro-optical element, characterized in that include: substrate; A waveguide, disposed on the substrate, wherein a tunable material layer and a polarization material layer are disposed on the waveguide, and the waveguide is configured to receive an optical signal input from the outside; the tunable material layer, the optical signal interacting with the tunable material layer to change the optical properties of the optical signal; The polarization material layer is configured to generate a plurality of polarization fields with different polarization directions based on different external excitations, the plurality of polarization fields including a first direction polarization field and a second direction polarization field, and the material properties of the region aligned with the first direction polarization field and the region aligned with the second direction polarization field in the tunable material layer are changed to achieve at least one of detection and modulation of the optical signal; The waveguide comprises a slot waveguide, and the slot waveguide comprises: a first waveguide, wherein the first waveguide is N-type doped so that holes are accumulated in a region of the tunable material layer above the first waveguide; a second waveguide, the second waveguide being P-type doped so that electrons are accumulated in a region above the second waveguide in the tunable material layer; A slit intermediate layer is disposed between the first waveguide and the second waveguide to localize the optical signal between the first waveguide and the second waveguide.

9. An electro-optical element, characterized in that: include: substrate; A waveguide, disposed on the substrate, wherein a tunable material layer and a polarization material layer are disposed on the waveguide, and the waveguide is configured to receive an optical signal input from the outside; the tunable material layer, the optical signal interacting with the tunable material layer to change the optical properties of the optical signal; The polarization material layer is configured to generate a plurality of polarization fields with different polarization directions based on different external excitations, the plurality of polarization fields including a first direction polarization field and a second direction polarization field, and the material properties of the region aligned with the first direction polarization field and the region aligned with the second direction polarization field in the tunable material layer are changed to achieve at least one of detection and modulation of the optical signal; The tunable material layer comprises: A first tunable material layer is disposed in a region aligned with the first-direction polarization field, and the first tunable material layer is configured to accumulate holes under the action of the first-direction polarization field; A second tunable material layer is arranged in a region aligned with the second-direction polarization field, the material of the second tunable material layer is different from the material of the first tunable material layer, and the second tunable material layer is configured to accumulate electrons or holes under the action of the second-direction polarization field to form a heterojunction on the surface where the first tunable material layer and the second tunable material layer are in contact.

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