Light emitting device and vehicle

Abstract

The application relates to a light-emitting device and a vehicle. The light-emitting device comprises a first substrate, a first conductive layer, a first functional layer, an ion conductive layer, a second functional layer, a second conductive layer and a second substrate which are sequentially stacked, wherein the first functional layer is one of a light modulation functional layer and an electroluminescent functional layer, and the second functional layer is the other of the light modulation functional layer and the electroluminescent functional layer; the light-emitting device further comprises a first electrode, a second electrode and a third electrode, wherein the first electrode is electrically connected with the first conductive layer, the second electrode is electrically connected with the second conductive layer, and the third electrode is electrically connected with the ion conductive layer; a short-circuit prevention structure is arranged in a surrounding area of the third electrode, wherein the short-circuit prevention structure is used for preventing short circuit between the third electrode and the first conductive layer or the second conductive layer when the light-emitting device is bent. The application can reduce the risk of short circuit.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a light-emitting device and a vehicle. Background Art

[0002] Electroluminescent technology is widely used in display and atmosphere products, while dimming technology has the function of adjusting light transmittance. Therefore, the light-emitting device obtained by combining the two technologies can not only achieve excellent luminous display or atmosphere effects during the day, but also simplify the process and save costs.

[0003] However, the light emitting device in the related art has the risk of being easily short-circuited. Summary of the Invention

[0004] Based on this, it is necessary to provide a light-emitting device and a vehicle that can reduce the risk of short circuit in order to address the above technical problems.

[0005] In the first aspect, the present application provides a light-emitting device, comprising a first substrate, a first conductive layer, a first functional layer, an ion conductive layer, a second functional layer, a second conductive layer and a second substrate stacked in sequence, wherein the first functional layer is one of a dimming functional layer and an electroluminescent functional layer, and the second functional layer is the other of the dimming functional layer and the electroluminescent functional layer; the light-emitting device also includes a first electrode, a second electrode and a third electrode, wherein the first electrode is electrically connected to the first conductive layer, the second electrode is electrically connected to the second conductive layer, and the third electrode is electrically connected to the ion conductive layer; an anti-short-circuit structure is provided in the surrounding area of ​​the third electrode, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode and the first conductive layer or the second conductive layer when the light-emitting device is bent.

[0006] In one embodiment, the anti-short circuit structure includes a first anti-short circuit layer arranged between the third electrode and the first substrate; the orthographic projection of the first anti-short circuit layer on the first substrate covers part or all of the orthographic projection of the third electrode on the first substrate.

[0007] In one embodiment, the first short-circuit preventing layer is bonded to the third electrode and the first bonded layer respectively; the first bonded layer includes at least one of the first substrate, the first conductive layer and the first functional layer.

[0008] In one embodiment, the first short circuit prevention layer and the third electrode extend to a side of the first substrate away from the first conductive layer.

[0009] In one embodiment, the anti-short circuit structure includes a second anti-short circuit layer disposed between the first functional layer and the second substrate; an orthographic projection of the second anti-short circuit layer on the first substrate partially overlaps with an orthographic projection of the third electrode on the first substrate.

[0010] In one embodiment, the second anti-short circuit layer is bonded to the third electrode and the second bonded layer respectively; the second bonded layer includes one of the following: an ion conductive layer; an ion conductive layer and a first functional layer; an ion conductive layer and a first substrate; an ion conductive layer, a first functional layer, a first conductive layer and a first substrate; an ion conductive layer, a first functional layer and a first substrate; an ion conductive layer, a first conductive layer and a first substrate.

[0011] In one embodiment, the anti-short circuit structure includes a third anti-short circuit layer arranged between the third electrode and the second substrate; the orthographic projection of the third anti-short circuit layer on the second substrate covers the orthographic projection of the electrically connected portion of the third electrode and the ion conductive layer on the second substrate.

[0012] In one embodiment, the third anti-short circuit layer is arranged in the ion conductive layer, or the third anti-short circuit layer is bonded to the second functional layer and the second conductive layer respectively; or the third anti-short circuit layer is bonded to the ion conductive layer and the third bonded layer respectively; the third bonded layer includes one of the following: the second functional layer; the second functional layer and the second conductive layer.

[0013] In one embodiment, the anti-short circuit structure includes a first etching line arranged between a first region and a second region of the first conductive layer, the first etching line being used to insulate the first region and the second region; wherein the first region covers the positive projection of the third electrode on the first conductive layer.

[0014] In one embodiment, the anti-short circuit structure includes a second etching line arranged between a third region and a fourth region of the second conductive layer, and the second etching line is used to insulate the third region and the fourth region; wherein the third region covers the positive projection of the third electrode on the second conductive layer.

[0015] In one embodiment, the light emitting device further includes a packaging structure, which is used to prevent the electroluminescent functional layer, the ion conductive layer and the dimming functional layer from contacting the external environment.

[0016] In a second aspect, the present application further provides a luminescent glass comprising the light-emitting device described in any one of the first aspects and a transparent panel, wherein the light-emitting device is arranged on the transparent panel.

[0017] In a third aspect, the present application further provides a vehicle comprising the light-emitting device described in the first aspect or the light-emitting glass described in the second aspect.

[0018] The above-mentioned light-emitting device includes a first substrate, a first conductive layer, a first functional layer, an ion conductive layer, a second functional layer, a second conductive layer and a second substrate stacked in sequence, wherein the first functional layer is one of the dimming functional layer and the electroluminescent functional layer, and the second functional layer is the other of the dimming functional layer and the electroluminescent functional layer; the light-emitting device also includes a first electrode, a second electrode and a third electrode, wherein the first electrode is electrically connected to the first conductive layer, the second electrode is electrically connected to the second conductive layer, and the third electrode is electrically connected to the ion conductive layer; an anti-short-circuit structure is provided in the surrounding area of ​​the third electrode, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode and the first conductive layer or the second conductive layer when the light-emitting device is bent, thereby reducing the short-circuit risk of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 Schematic diagram of a light emitting device in related art;

[0021] Figure 2 is an exploded schematic diagram of a light emitting device according to an embodiment;

[0022] Figure 3 is an exploded schematic diagram of another light-emitting device according to an embodiment;

[0023] Figure 4 is a top view of a light emitting device in another embodiment;

[0024] Figure 5 is a schematic cross-sectional view of three electrode unit regions in one embodiment;

[0025] Figure 6 is a cross-sectional schematic diagram of another three-electrode unit region in one embodiment;

[0026] Figure 7 1 is a schematic plan view of a first type of first anti-short-circuit layer in one embodiment;

[0027] Figure 8 is a schematic plan view of a second first anti-short-circuit layer in one embodiment;

[0028] Figure 9 is a schematic plan view of a third first anti-short-circuit layer in one embodiment;

[0029] Figure 10 A partial plan view of a third electrode and a first anti-short-circuit layer being attached to each other in one embodiment;

[0030] Figure 11 is a schematic plan view of a second anti-short-circuit layer in one embodiment;

[0031] Figure 12 is a schematic cross-sectional view of a first third anti-short-circuit layer in one embodiment;

[0032] Figure 13 is a schematic cross-sectional view of a second third anti-short-circuit layer in one embodiment;

[0033] Figure 14 is a cross-sectional schematic diagram of a third type of third short-circuit prevention layer in one embodiment;

[0034] Figure 15 is a schematic cross-sectional view of a fourth third anti-short-circuit layer in one embodiment;

[0035] Figure 16 is a plan view of a first etching line in one embodiment;

[0036] Figure 17 FIG. 4 is a plan view of a second etching line in an embodiment. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0039] It will be understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor without departing from the scope of this application. The first resistor and the second resistor are both resistors, but they are not the same resistor.

[0040] It will be understood that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only embodiments.

[0041] In the description of this application, it should be understood that "electrical connection" in this application can be understood as physical contact and electrical conduction between components, wherein the modes of electrical conduction include ionic conduction and electronic conduction. For example, the ionic conductive layer is electrically connected to the third electrode, which is to achieve electrical conduction through ionic conduction, and the first conductive layer is electrically connected to the first electrode, which is to achieve electrical conduction through electronic conduction. It can also be understood as a form of connection between different components in a circuit structure through physical lines such as printed circuit board (PCB) copper foil or wires that can transmit electrical signals.

[0042] Electroluminescent technology is widely used in display and atmosphere products, while dimming technology has the function of adjusting light transmittance. Therefore, the light-emitting device obtained by combining the two technologies can not only achieve excellent luminous display or atmosphere effects during the day, but also simplify the process and save costs.

[0043] In related technologies, light-emitting devices obtained by combining electroluminescence technology with dimming technology are as follows: Figure 1 As shown, the light-emitting device in this related art includes two upper and lower substrates, each of which is covered with a transparent conductive layer, and two electrodes that respectively supply power to the two transparent conductive layers. A soft ion conductive layer is disposed between the two substrates. The ion conductive layer is a gel material that functions as ion transport and ion storage. The ion conductive layer is electrically connected to a third electrode. A tungsten trioxide (WO3) film layer (serving as a dimming layer) is disposed between the upper substrate and the ion conductive layer, and a copper-doped zinc sulfide (ZnS:Cu) layer (serving as an electroluminescent layer) is disposed between the ion conductive layer and the lower substrate. The third electrode cannot be directly fabricated on the transparent conductive layer and generally needs to be attached to the electroluminescent layer or the dimming layer and electrically connected to the ion conductive layer.

[0044] However, such an electrode arrangement is not suitable for flexible devices. For example, a device based on a flexible transparent conductive film ITO-PET is used as an example. A conductive tape is used as the third electrode and bonded to the bonded layer through an adhesive. However, the substance in the ion conductor layer will destroy the adhesion of the adhesive. When the flexible device is bent, the third electrode and the bonded layer including the ion conductive layer are separated from each other. Under extrusion, it will penetrate the middle layer and contact the transparent conductive layer on the substrate, causing a short circuit. Therefore, the light-emitting device in the related art is prone to short circuit.

[0045] Based on this, it is necessary to propose effective technical means to solve the above-mentioned problems. The following specific embodiments are used to describe in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems. In addition, the following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.

[0046] In an exemplary embodiment, Figure 2 As shown, an exploded schematic diagram of a light-emitting device is provided, wherein the light-emitting device includes a first substrate 101, a first conductive layer 102, a first functional layer 103, an ion conductive layer 104, a second functional layer 105, a second conductive layer 106 and a second substrate 107 stacked in sequence, wherein the first functional layer 103 is one of the dimming functional layer DM and the electroluminescent functional layer EL, and the second functional layer 105 is the other of the dimming functional layer DM and the electroluminescent functional layer EL; the light-emitting device also includes a first electrode 108a, a second electrode 109a and a third electrode 110a, wherein the first electrode 108a is electrically connected to the first conductive layer 102, the second electrode 109a is electrically connected to the second conductive layer 106, and the third electrode 110a is electrically connected to the ion conductive layer 104; an anti-short-circuit structure is provided in the surrounding area of ​​the third electrode 110a, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode 110a and the first conductive layer 102 or the second conductive layer 106 when the light-emitting device is bent.

[0047] The first substrate 101 and the second substrate 107 are both transparent substrates, specifically inorganic glass plates or organic films. The organic films may be, for example, polyethylene terephthalate (PET) films, polycarbonate (PC) films, polymethyl methacrylate (PMMA) films, and the like.

[0048] Both the first conductive layer 102 and the second conductive layer 106 may be transparent conductive layers.

[0049] like Figure 2As shown, the first functional layer 103 is the dimming functional layer DM, and the second functional layer 105 is the electroluminescent functional layer EL. In this way, the first electrode 108a, the first conductive layer 102, the first functional layer 103 (dimming functional layer DM), the ion conductor layer 104 and the third electrode 110a can be used to realize electrically controlled dimming; the second electrode 109a, the second conductive layer 106, the second functional layer 105 (electroluminescent functional layer EL), the ion conductor layer 104 and the third electrode 110a can be used to realize electroluminescence.

[0050] like Figure 3 FIG. 1 shows an exploded view of another light-emitting device, in which the first functional layer 103 is an electroluminescent layer EL, and the second functional layer 105 is a dimming layer DM. Thus, the first electrode 108a, the first conductive layer 102, the first functional layer 103 (electroluminescent layer EL), the ion conductor layer 104, and the third electrode 110a can be used to achieve electroluminescence; the second electrode 109a, the second conductive layer 106, the second functional layer 105 (dimming layer DM), the ion conductor layer 104, and the third electrode 110a can be used to achieve electrically controlled dimming.

[0051] It can be seen that in the light emitting device, the dimming function layer DM and the electroluminescent function layer EL share the ion conductor layer 104 and the third electrode 110 a .

[0052] like Figure 2 and Figure 3 As shown, the light-emitting device further includes a first transmission line 108b, a second transmission line 109b, and a third transmission line 110b electrically connected to the first electrode 108a, the second electrode 109a, and the third electrode 110a, respectively. The first transmission line 108b, the second transmission line 109b, and the third transmission line 110b are connected to an external power source. The first electrode 108a and the first transmission line 108b constitute a first electrode unit 108, the second electrode 109a and the second transmission line 109b constitute a second electrode unit 109, and the third electrode 110a and the third transmission line 110b constitute a third electrode unit 110.

[0053] The first electrode unit 108, the second electrode unit 109, and the third electrode unit 110 can be located on either side of the light-emitting device. Preferably, the first electrode unit 108, the second electrode unit 109, and the third electrode unit 110 are located on different sides of the light-emitting device to avoid interference between the electrode units. However, to facilitate connection of the transmission line to an external power source, the first electrode unit 108, the second electrode unit 109, and the third electrode unit 110 can be located on the same side. However, an electronic insulation layer must be provided between the electrodes to prevent short circuits.

[0054] like Figure 2 and Figure 3As shown, the anti-short-circuit structure includes a first anti-short-circuit layer 111 and a second anti-short-circuit layer 112, wherein the first anti-short-circuit layer 111 is arranged between the third electrode 110a and the first substrate 101, which is equivalent to being arranged above the third electrode 110a, and the orthographic projection of the first anti-short-circuit layer 111 on the first substrate 101 covers part of or all of the orthographic projection of the third electrode 110a on the first substrate 101. Therefore, the first anti-short-circuit layer 111 is used to prevent the third electrode 110a from contacting the first conductive layer 102 and causing a short circuit after the first anti-short-circuit layer 111 is separated from the bonded layers including the ion conductive layer 104 when the light-emitting device is bent. The second anti-short-circuit layer 112 is arranged between the first functional layer 103 and the second substrate 107, which is equivalent to being arranged below the third electrode 110a, and the orthographic projection of the second anti-short-circuit layer 112 on the first substrate 101 partially overlaps with the orthographic projection of the third electrode 110a on the first substrate 101. Therefore, the second anti-short-circuit layer 112 is used to prevent the third electrode 110a from contacting the second conductive layer 106 and causing a short circuit after the third electrode 110a is separated from the bonded layer including the ion conductive layer 104 when the light-emitting device is bent.

[0055] It should be noted that the areas of the first substrate 101 , the first conductive layer 102 , the first functional layer 103 , the ion conductive layer 104 , the second functional layer 105 , the second conductive layer 106 , the second substrate 107 and the anti-short-circuit layer are not limited here and can be adjusted as needed.

[0056] The light-emitting device includes a first substrate 101, a first conductive layer 102, a first functional layer 103, an ion conductive layer 104, a second functional layer 105, a second conductive layer 106, and a second substrate 107 stacked in sequence, wherein the first functional layer 103 is one of the dimming functional layer DM and the electroluminescent functional layer EL, and the second functional layer 105 is the other of the dimming functional layer DM and the electroluminescent functional layer EL; the light-emitting device also includes a first electrode 108a, a second electrode 109a, and a third electrode 110a. Among them, the first electrode 108a is electrically connected to the first conductive layer 102, the second electrode 109a is electrically connected to the second conductive layer 106, and the third electrode 110a is electrically connected to the ion conductive layer 104; the surrounding area of ​​the third electrode 110a is provided with an anti-short-circuit structure, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode 110a and the first conductive layer 102 or the second conductive layer 106 when the light-emitting device is bent, thereby reducing the short-circuit risk of the light-emitting device and thus meeting the stability of the use of the flexible device.

[0057] In an exemplary embodiment, based on Figure 2 or Figure 3 , provides a Figure 4The light emitting device shown is a top view. The light emitting device further includes an encapsulation structure 113. The encapsulation structure 113 is used to prevent the electroluminescent functional layer EL, the ion conductive layer 104 and the dimming functional layer DN from contacting the external environment.

[0058] The packaging structure 113 is provided on a side of the electroluminescent functional layer EL, the ion conductive layer 104 and the dimming layer DM that contacts the external environment (such as air).

[0059] Figure 4 In the figure, the orthographic projection of the first substrate 101 on the ground plane partially overlaps with the orthographic projection of the second substrate 107 on the ground plane, that is, the arrangement of the first substrate 101 and the second substrate 107 is not aligned vertically. The packaging structure 113 is provided on the side of the electroluminescent functional layer EL, the ion conductive layer 104 and the dimming layer DM that is in contact with the external environment. Figure 2 or Figure 3 The top view of the light emitting device shows the first substrate 101, the second conductive layer 106, the packaging structure 113, the first transmission line 108b, the second electrode 109a, the second transmission line 109b and the third transmission line 110b.

[0060] in addition, Figure 4 In the figure, 1081 refers to the relevant area of ​​the first electrode unit 108 , 1091 refers to the relevant area of ​​the second electrode unit 109 , and 1101 refers to the relevant area of ​​the third electrode unit 110 .

[0061] Furthermore, in order to facilitate understanding of the relationship between the components, based on Figure 2 and Figure 4 Provides such Figure 5 The cross-sectional diagram of the three electrode unit areas shown is based on Figure 3 and Figure 4 Provides such Figure 6 Schematic diagram of the three electrode unit areas shown, Figure 5 and Figure 6 The only difference is the location of the dimming function layer DM and the electroluminescent function layer EL. Figure 5 and Figure 6 , 1081 is a cross-sectional view of the first electrode unit 108 , 1091 is a cross-sectional view of the second electrode unit 109 , and 1101 is a cross-sectional view of the third electrode unit 110 .

[0062] from Figure 5 and Figure 6As can be seen in the figure, an encapsulation structure 113 is provided between the first anti-short-circuit layer 111 and the first functional layer 103. This is because, when the first anti-short-circuit layer 111 cannot completely isolate the air due to material problems, the encapsulation structure 113 is required to prevent the first functional layer 103 from coming into contact with the air. In this case, the first anti-short-circuit layer 111 directly bonds to the first conductive layer 102 across the encapsulation structure 113. Of course, if the first anti-short-circuit layer 111 can completely isolate the air, the encapsulation structure 113 is not required between the first anti-short-circuit layer 111 and the first functional layer 103.

[0063] In this embodiment, the encapsulation structure 113 prevents the electroluminescent functional layer EL, the ion conductive layer 104 and the dimming functional layer DN from contacting the external environment, thereby extending the service life of the light emitting device.

[0064] In an exemplary embodiment, Figure 2 and Figure 5 As shown, or as Figure 3 and Figure 6 As shown, the anti-short circuit structure includes a first anti-short circuit layer 111 arranged between the third electrode 110a and the first substrate 101; the orthographic projection of the first anti-short circuit layer 111 on the first substrate 101 covers part or all of the orthographic projection of the third electrode 110a on the first substrate 101.

[0065] The first short-circuit prevention layer 111 is in the form of a solid sheet, which can be formed by direct bonding with tape or by in-situ curing of a fluid slurry. The overall shape can be regular or irregular. The first short-circuit prevention layer 111 can be made of a non-electronic conductive material with adhesive properties, preferably an ionic conductor or an insulating material. Specifically, it can be an organic non-electronic conductive material, whose components include at least one of polyacrylates, polyolefins, epoxies, polyesters, polyurethanes, polyimides, and silicone polymers. Of course, inorganic non-electronic conductive materials can also be used. The material of the first short-circuit prevention layer 111 is not limited herein.

[0066] Optionally, the first short circuit preventing layer 111 is bonded to the third electrode 110 a and the first bonded layer respectively; the first bonded layer includes at least one of the first substrate 101 , the first conductive layer 102 and the first functional layer 103 .

[0067] The following describes various situations of the first anti-short-circuit layer 111 in detail:

[0068] The first one, such as Figure 7As shown, the first short-circuit prevention layer 111 is bonded to the third electrode 110a and the first functional layer 103: the first functional layer 103 and the first conductive layer 102 completely cover the first short-circuit prevention layer 111, and the first short-circuit prevention layer 111 is bonded to the first functional layer 103. The orthographic projection of the first short-circuit prevention layer 111 on the first substrate 101 covers the entire area of ​​the orthographic projection of the third electrode 110a on the first substrate 101.

[0069] The second type, such as Figure 8 As shown, the first short-circuit prevention layer 111 is bonded to the third electrode 110a, the first functional layer 103, and the first conductive layer 102: the first conductive layer 102 completely covers the first short-circuit prevention layer 111, the first functional layer 103 and the first short-circuit prevention layer 111 do not overlap each other, and the first short-circuit prevention layer 111 is bonded to the first functional layer 103 and the first conductive layer 102. This is equivalent to a window being opened in the first functional layer 103, through which the first short-circuit prevention layer 111 passes and is bonded to the first conductive layer 102, and the first short-circuit prevention layer 111 is bonded to the edge of the window. The orthographic projection of the first short-circuit prevention layer 111 on the first substrate 101 covers the entire area of ​​the orthographic projection of the third electrode 110a on the first substrate 101.

[0070] The third type, such as Figure 9 As shown, the first short-circuit prevention layer 111 is bonded to the third electrode 110a, the first functional layer 103, and the first substrate 101: the first conductive layer 102 and the first functional layer 103 do not cover each other with the first short-circuit prevention layer 111. The first short-circuit prevention layer 111 is bonded to the first functional layer 103 and the first substrate 101, which is equivalent to having windows in both the first functional layer 103 and the first conductive layer 102. The first short-circuit prevention layer 111 passes through the windows in the first functional layer 103 and the windows in the second conductive layer 102 in sequence and is bonded to the first substrate 101. The first short-circuit prevention layer 111 is bonded to the edge of the window in the first functional layer 103, but not to the edge of the window in the first conductive layer 102. The orthographic projection of the first short-circuit prevention layer 111 on the first substrate 101 covers part or all of the orthographic projection of the third electrode 110a on the first substrate 101.

[0071] Among them, if the window on the first conductive layer 102 is large, even if the third electrode 110a is separated from the adhesive layer including the ion conductive layer 104 and penetrates, it will not contact the first conductive layer 102. Then, the orthographic projection of the first anti-short-circuit layer 111 on the first substrate 101 can cover part of the orthographic projection of the third electrode 110a on the first substrate 101.

[0072] It can be understood that the first anti-short circuit layer 111 can be bonded to the edge of the window on the first functional layer 103 and the edge of the window on the first conductive layer 102, which results in the fourth situation, where the first anti-short circuit layer 111 is bonded to the third electrode 110a, the first functional layer 103, the first conductive layer 102 and the first substrate 101.

[0073] Similarly, the first anti-short-circuit layer 111 may not be bonded to the edge of the window on the first functional layer 103, but may be bonded to the edge of the window on the first conductive layer 102, which results in the fifth case, where the first anti-short-circuit layer 111 is bonded to the third electrode 110a, the first conductive layer 102 and the first substrate 101.

[0074] Similarly, the first anti-short-circuit layer 111 is not bonded to the edge of the window on the first functional layer 103 and the edge of the window on the first conductive layer 102, resulting in the sixth case, where the first anti-short-circuit layer 111 is bonded to the third electrode 110a and the first substrate 101.

[0075] In the above six cases, if the light emitting device is provided with Figure 2 If the second short-circuit preventing layer 112 is provided, the first short-circuit preventing layer 111 may be bonded to the second short-circuit preventing layer 112 or not. Figure 7-9 In the examples, the second anti-short-circuit layer 112 is provided.

[0076] exist Figure 7 In the stacking order of the light emitting device, the stacking order is: first substrate 101, first conductive layer 102, first functional layer 103, first anti-short circuit layer 111, third electrode 110a and second anti-short circuit layer 112. Figure 8 In the stacking order of the light emitting device, the stacking order is: first substrate 101, first conductive layer 102, first anti-short circuit layer 111, third electrode 110a and second anti-short circuit layer 112. Figure 9 In the embodiment, the stacking order of the light emitting device is: a first substrate 101 , a first anti-short-circuit layer 111 , a third electrode 110 a and a second anti-short-circuit layer 112 .

[0077] Optionally, the orthographic projection of the first anti-short-circuit layer 111 on the first substrate 101 covers the entire area of ​​the orthographic projection of the third electrode 110a on the first substrate 101. The orthographic projection of the first anti-short-circuit layer 111 on the first substrate 101 may only cover the entire area of ​​the orthographic projection of the third electrode 110a on the first substrate 101, and does not cover or covers part of the orthographic projection of the third transmission line 110b on the first substrate 101. The orthographic projection of the first anti-short-circuit layer 111 on the first substrate 101 may not only cover the entire area of ​​the orthographic projection of the third electrode 110a on the first substrate 101, but also cover the entire area of ​​the orthographic projection of the third transmission line 110b on the first substrate 101, as shown in FIG. Figure 10, a partial plan view of the adhesion of the third electrode and the first anti-short-circuit layer is provided. The third electrode 110 a and the third transmission line 110 b are made of the same conductive tape and are adhered to the first anti-short-circuit layer 111 .

[0078] In this embodiment, the first anti-short-circuit layer 111 is used to prevent direct electronic conduction between the third electrode 110a and the first conductive layer 102 when the light-emitting device is bent, thereby preventing a short circuit. Furthermore, the first anti-short-circuit layer 111 also strengthens the adhesion between the third electrode 110a and the bonded layer, including the ion-conductive layer, thereby preventing the third electrode 110a from separating from the bonded layer. If a second anti-short-circuit layer 112 is provided and the first anti-short-circuit layer 111 is bonded to the second anti-short-circuit layer 112, the first anti-short-circuit layer 111 also strengthens the adhesion of the second anti-short-circuit layer 112 to the bonded layer, thereby preventing the second anti-short-circuit layer 112 from separating from the bonded layer.

[0079] In one embodiment, the first short circuit prevention layer 111 and the third electrode 110 a extend to a side of the first substrate 101 away from the first conductive layer 102 .

[0080] That is, the first short-circuit prevention layer 111 and the third electrode 110a extend to the side of the first substrate 101 that is not in contact with the first conductive layer. This is done to facilitate connection to an external power source when the light-emitting element is installed on a vehicle.

[0081] In an exemplary embodiment, Figure 2 and Figure 5 As shown, or as Figure 3 and Figure 6 As shown, the anti-short circuit structure includes a second anti-short circuit layer 112 arranged between the first functional layer 103 and the second substrate 107; the orthographic projection of the second anti-short circuit layer 112 on the first substrate 101 partially overlaps with the orthographic projection of the third electrode 110a on the first substrate 101.

[0082] Among them, the second anti-short-circuit layer 112 is in the form of a solid sheet, which can be directly bonded by tape or formed by in-situ solidification of a flowing slurry, and the overall shape can be regular or irregular. The second anti-short-circuit layer 112 can be made of non-electronic conductive materials with adhesive properties, preferably ionic conductors and insulating materials. Specifically, it can be an organic non-electronic conductive material, whose components include at least one of polyacrylates, polyolefins, epoxy resins, polyesters, polyurethanes, polyimides, and silicone polymers. Of course, inorganic non-electronic conductive materials can also be used. Secondly, the second anti-short-circuit layer 112 can also use an ion-conductive adhesive, such as a slurry mixed with an ion conductor powder and an adhesive. This can avoid the use of ionic insulating materials and the loss of the function of the part of the electrode covered by it. The material of the second anti-short-circuit layer 112 is not limited here.

[0083] Optionally, the second anti-short circuit layer 112 is bonded to the third electrode 110a and the second bonded layer respectively; the second bonded layer includes one of the following: an ion conductive layer 104; an ion conductive layer 104 and a first functional layer 103; an ion conductive layer 104 and a first substrate 101; an ion conductive layer 104, a first functional layer 103, a first conductive layer 102 and a first substrate 101; an ion conductive layer 104, a first functional layer 103 and a first substrate 101; an ion conductive layer 104, a first conductive layer 102 and a first substrate 101.

[0084] The following describes various situations of the second anti-short-circuit layer 112 in detail:

[0085] The first type is that the second anti-short-circuit layer 112 is bonded to the third electrode 110a and the ion conductive layer 104 respectively. At this time, the orthographic projection of the third electrode 110a on the first substrate 101 completely covers the orthographic projection of the second anti-short-circuit layer 112 on the first substrate 101. Note that the orthographic projection of the second anti-short-circuit layer 112 on the first substrate 101 will not completely cover the orthographic projection of the third electrode 110a on the first substrate 101, which is equivalent to the second anti-short-circuit layer 112 being arranged between the third electrode 110a and the ion conductive layer 104.

[0086] The second anti-short-circuit layer 112 is bonded to the third electrode 110a, the ion conductive layer 104 and the first functional layer 103 respectively, which is equivalent to Figure 5 or Figure 6 In the embodiment, one side of the second anti-short-circuit layer 112 connected to the first anti-short-circuit layer 111 is extended to be bonded to the first functional layer 103 .

[0087] The third type, such as Figure 11 As shown, the second anti-short-circuit layer 112 is bonded to the third electrode 110a, the ion conductive layer 104 and the first substrate 101 respectively. At this time, windows are opened on the first functional layer 103 and the first conductive layer 102. The first anti-short-circuit layer 111 passes through the window on the first functional layer 103 and the window on the second conductive layer 102 in sequence and is bonded to the first substrate 101. Moreover, the second anti-short-circuit layer 112 is not bonded to the edges of the window on the first functional layer 103 and the edges of the window on the first conductive layer 102.

[0088] It can be understood that the second anti-short circuit layer 112 can be bonded to the edge of the window on the first functional layer 103 and the edge of the window on the first conductive layer 102, which results in the fourth situation, where the second anti-short circuit layer 112 is bonded to the third electrode 110a, the ion conductive layer 104, the first functional layer 103, the first conductive layer 102 and the first substrate 101.

[0089] Similarly, the second anti-short circuit layer 112 can be bonded to the edge of the window on the first functional layer 103, but not to the edge of the window on the first conductive layer 102, which results in the fifth situation, where the second anti-short circuit layer 112 is bonded to the third electrode 110a, the ion conductive layer 104, the first functional layer 103 and the first substrate 101.

[0090] Similarly, the second anti-short circuit layer 112 may not be bonded to the edge of the window on the first functional layer 103, but may be bonded to the edge of the window on the first conductive layer 102, which results in the sixth case, where the second anti-short circuit layer 112 is bonded to the third electrode 110a, the ion conductive layer 104, the first conductive layer 102 and the first substrate 101.

[0091] In the above six cases, if the light emitting device is provided with Figure 2 The first anti-short circuit layer 111 is formed in the second anti-short circuit layer 112 , and the second anti-short circuit layer 112 may be bonded to the first anti-short circuit layer 111 or not. Figure 11 In the examples, the first anti-short-circuit layer 111 is not provided.

[0092] In this embodiment, the second anti-short-circuit layer 112 strengthens the adhesion of the third electrode 110a to the bonded layer, preventing the third electrode 110a from separating from the bonded layer, including the ion conductive layer 104, when the light-emitting device is bent. In addition, if the first anti-short-circuit layer 111 is provided and the second anti-short-circuit layer 112 is bonded to the first anti-short-circuit layer 111, the second anti-short-circuit layer 112 also strengthens the adhesion of the first anti-short-circuit layer 111 to the bonded layer, preventing the first anti-short-circuit layer 111 from separating from the bonded layer.

[0093] In one embodiment, the anti-short circuit structure includes a third anti-short circuit layer 114 arranged between the third electrode 110a and the second substrate 107; the orthographic projection of the third anti-short circuit layer 114 on the second substrate 107 covers the orthographic projection of the electrically connected part of the third electrode 110a and the ion conductive layer 104 on the second substrate 107.

[0094] The third short-circuit prevention layer 114 and the second short-circuit prevention layer 112 may be made of the same material or different materials, which is not limited herein. The overall shape of the third short-circuit prevention layer 114 may be regular or irregular.

[0095] Optionally, the third anti-short circuit layer 114 is provided in the ion conductive layer 104, such as Figure 12 Alternatively, the third anti-short-circuit layer 114 is bonded to the second functional layer 105 and the second conductive layer 106, respectively, as shown Figure 13 As shown; alternatively, the third anti-short circuit layer 114 is bonded to the ion conductive layer 104 and the third bonded layer respectively; the third bonded layer includes one of the following: the second functional layer 105; the second functional layer 105 and the second conductive layer 106.

[0096] The third anti-short circuit layer 114 is bonded to the ion conductive layer 104 and the second functional layer 105, respectively. Figure 14 The third anti-short circuit layer 114 is bonded to the ion conductive layer 104, the second functional layer 105 and the second conductive layer 106 respectively, as shown. Figure 15 shown.

[0097] In this embodiment, the third anti-short-circuit layer 114 is not in direct contact with the third electrode 110a. When the light-emitting device is bent, the third electrode 110a is separated from the bonded layers including the ion conductive layer 104. The third anti-short-circuit layer 114 is used to prevent the third electrode 110a from being electrically connected to the second conductive layer 106. Therefore, the side of the third anti-short-circuit layer 114 facing the third electrode 110a is harder than the hardness of the third electrode 110a, thereby avoiding being damaged by the third electrode 110a.

[0098] In an exemplary embodiment, Figure 16 As shown, the anti-short circuit structure includes a first etching line 115 arranged between a first area and a second area of ​​the first conductive layer 102, and the first etching line 115 is used to insulate the first area and the second area; wherein the first area covers the positive projection of the third electrode 110a on the first conductive layer 102.

[0099] The first etching line 115 can be formed by laser engraving or mechanical cutting.

[0100] In this embodiment, the first etching line 115 can avoid the risk of short circuit caused by contact between the third electrode 110 a and the first conductive layer 102 .

[0101] In an exemplary embodiment, Figure 17 As shown, the anti-short circuit structure includes a second etching line 116 arranged between the third region and the fourth region of the second conductive layer 106, and the second etching line 116 is used to insulate the third region and the fourth region; wherein the third region covers the positive projection of the third electrode 110a on the second conductive layer 106.

[0102] The second etching line 116 can be formed by laser engraving or mechanical cutting.

[0103] In this embodiment, the second etched line 116 can avoid the risk of short circuit caused by contact between the third electrode 110 a and the second conductive layer 106 .

[0104] The above-mentioned first anti-short circuit structure 111, second anti-short circuit structure 112, third anti-short circuit structure 114, anti-short circuit structure including first etching line 115 and anti-short circuit structure including second etching line 116 can be arbitrarily combined, as shown below. Of course, there are more combinations, which are not listed here one by one.

[0105] First combination: a first anti-short-circuit layer 111 and a second anti-short-circuit layer 112 are provided.

[0106] Second combination: providing the first anti-short-circuit layer 111 and the third anti-short-circuit layer 114 .

[0107] The third combination: a first anti-short circuit layer 111 , a second anti-short circuit layer 112 and a third anti-short circuit layer 114 are provided.

[0108] Fourth combination: providing a first anti-short circuit layer 111 and a second etching line 116 .

[0109] Fifth combination: providing a second anti-short circuit layer 112 and a first etching line 115 .

[0110] Sixth combination: providing a third anti-short-circuit layer 114 and a first etching line 115 .

[0111] In an exemplary embodiment, the present application further provides a luminescent glass, which includes the light-emitting device described in any one of the above embodiments and a transparent panel, wherein the light-emitting device is arranged on the transparent panel.

[0112] Wherein, the transparent panel is glass, and if the glass is laminated glass, the light emitting device can be arranged on any one of the first surface, the second surface, the third surface and the fourth surface of the laminated glass.

[0113] In an exemplary embodiment, the present application further provides a vehicle, which includes the light-emitting device described in any one of the above embodiments, or the vehicle includes the above-mentioned light-emitting glass.

[0114] Among them, the means of transport may include road vehicles, water vehicles, air vehicles, industrial equipment, agricultural equipment, or entertainment equipment, etc. For example, the means of transport may be a vehicle, which is a vehicle in a broad sense and may be a means of transport (such as a commercial vehicle, a passenger car, a motorcycle, a flying car, a train, etc.), an industrial vehicle (such as a forklift, a trailer, a tractor, etc.), an engineering vehicle (such as an excavator, a bulldozer, a crane, etc.), agricultural equipment (such as a lawn mower, a harvester, etc.), amusement equipment, a toy vehicle, etc. The embodiments of the present application do not specifically limit the type of vehicle. For another example, the means of transport may be a vehicle such as an airplane or a ship.

[0115] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0116] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A light emitting device, characterized in that: The light-emitting device comprises a first substrate, a first conductive layer, a first functional layer, an ion conductive layer, a second functional layer, a second conductive layer, and a second substrate, which are sequentially stacked, wherein the first functional layer is one of a dimming functional layer and an electroluminescent functional layer, and the second functional layer is the other of the dimming functional layer and the electroluminescent functional layer; The light emitting device further comprises a first electrode, a second electrode and a third electrode, wherein the first electrode is electrically connected to the first conductive layer, the second electrode is electrically connected to the second conductive layer, and the third electrode is electrically connected to the ion conductive layer; An anti-short-circuit structure is provided in a surrounding area of ​​the third electrode, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode and the first conductive layer or the second conductive layer when the light-emitting device is bent; The anti-short-circuit structure includes a first anti-short-circuit layer arranged between the third electrode and the first substrate; the orthographic projection of the first anti-short-circuit layer on the first substrate covers part of or all of the orthographic projection of the third electrode on the first substrate; the first anti-short-circuit layer is bonded to the third electrode and the first bonded layer respectively; the first bonded layer includes at least one of the first substrate, the first conductive layer and the first functional layer.

2. The light emitting device according to claim 1, wherein The first short circuit prevention layer and the third electrode extend to a side of the first substrate away from the first conductive layer.

3. The light emitting device according to claim 1, wherein The anti-short circuit structure further includes a second anti-short circuit layer disposed between the first functional layer and the second substrate; An orthographic projection of the second short-circuit preventing layer on the first substrate partially overlaps with an orthographic projection of the third electrode on the first substrate.

4. The light emitting device according to claim 3, characterized in that The second short-circuit preventing layer is bonded to the third electrode and the second bonded layer respectively; The second bonded layer includes one of the following: the ion conductive layer; the ion conductive layer and the first functional layer; the ion conductive layer and the first substrate; the ion conductive layer, the first functional layer, the first conductive layer and the first substrate; the ion conductive layer, the first functional layer and the first substrate; the ion conductive layer, the first conductive layer, and the first substrate.

5. The light emitting device according to claim 1, wherein The anti-short circuit structure further includes a third anti-short circuit layer provided between the third electrode and the second substrate; The orthographic projection of the third short-circuit preventing layer on the second substrate covers the orthographic projection of the portion where the third electrode is electrically connected to the ion conductive layer on the second substrate.

6. The light emitting device according to claim 5, characterized in that The third short-circuit prevention layer is provided in the ion conductive layer, or the third short-circuit prevention layer is bonded to the second functional layer and the second conductive layer respectively; or the third short-circuit prevention layer is bonded to the ion conductive layer and the third bonded layer respectively; The third bonded layer includes one of the following: the second functional layer; the second functional layer and the second conductive layer.

7. The light emitting device according to claim 1, characterized in that The anti-short circuit structure further includes a first etching line disposed between the first region and the second region of the first conductive layer, wherein the first etching line is used to insulate the first region from the second region; The first region covers the orthographic projection of the third electrode on the first conductive layer.

8. The light emitting device according to claim 1, wherein The anti-short circuit structure further includes a second etching line disposed between the third region and the fourth region of the second conductive layer, wherein the second etching line is used to insulate the third region from the fourth region; The third region covers the orthographic projection of the third electrode on the second conductive layer.

9. The light emitting device according to claim 1, wherein The light emitting device further includes a packaging structure, which is used to prevent the electroluminescent functional layer, the ion conductive layer and the dimming functional layer from contacting the external environment.

10. A light emitting device, characterized in that: The light-emitting device comprises a first substrate, a first conductive layer, a first functional layer, an ion conductive layer, a second functional layer, a second conductive layer, and a second substrate, which are sequentially stacked, wherein the first functional layer is one of a dimming functional layer and an electroluminescent functional layer, and the second functional layer is the other of the dimming functional layer and the electroluminescent functional layer; The light emitting device further comprises a first electrode, a second electrode and a third electrode, wherein the first electrode is electrically connected to the first conductive layer, the second electrode is electrically connected to the second conductive layer, and the third electrode is electrically connected to the ion conductive layer; An anti-short-circuit structure is provided in a surrounding area of ​​the third electrode, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode and the first conductive layer or the second conductive layer when the light-emitting device is bent; The anti-short circuit structure includes a second anti-short circuit layer provided between the first functional layer and the second substrate; an orthographic projection of the second anti-short circuit layer on the first substrate partially overlaps with an orthographic projection of the third electrode on the first substrate; The second short-circuit preventing layer is bonded to the third electrode and the second bonded layer respectively; The second bonded layer includes one of the following: the ion conductive layer; the ion conductive layer and the first functional layer; the ion conductive layer and the first substrate; the ion conductive layer, the first functional layer, the first conductive layer and the first substrate; the ion conductive layer, the first functional layer and the first substrate; the ion conductive layer, the first conductive layer, and the first substrate.

11. The light emitting device according to claim 10, characterized in that The anti-short circuit structure further includes a third anti-short circuit layer provided between the third electrode and the second substrate; The orthographic projection of the third short-circuit preventing layer on the second substrate covers the orthographic projection of the portion where the third electrode is electrically connected to the ion conductive layer on the second substrate.

12. The light emitting device according to claim 11, characterized in that The third short-circuit prevention layer is provided in the ion conductive layer, or the third short-circuit prevention layer is bonded to the second functional layer and the second conductive layer respectively; or the third short-circuit prevention layer is bonded to the ion conductive layer and the third bonded layer respectively; The third bonded layer includes one of the following: the second functional layer; the second functional layer and the second conductive layer.

13. The light emitting device according to claim 10, characterized in that The anti-short circuit structure further includes a first etching line disposed between the first region and the second region of the first conductive layer, wherein the first etching line is used to insulate the first region from the second region; The first region covers the orthographic projection of the third electrode on the first conductive layer.

14. The light emitting device according to claim 10, characterized in that The anti-short circuit structure further includes a second etching line disposed between the third region and the fourth region of the second conductive layer, wherein the second etching line is used to insulate the third region from the fourth region; The third region covers the orthographic projection of the third electrode on the second conductive layer.

15. The light emitting device according to claim 10, characterized in that The light emitting device further includes a packaging structure, which is used to prevent the electroluminescent functional layer, the ion conductive layer and the dimming functional layer from contacting the external environment.

16. A light emitting device, characterized in that: The light-emitting device comprises a first substrate, a first conductive layer, a first functional layer, an ion conductive layer, a second functional layer, a second conductive layer, and a second substrate, which are sequentially stacked, wherein the first functional layer is one of a dimming functional layer and an electroluminescent functional layer, and the second functional layer is the other of the dimming functional layer and the electroluminescent functional layer; The light emitting device further comprises a first electrode, a second electrode and a third electrode, wherein the first electrode is electrically connected to the first conductive layer, the second electrode is electrically connected to the second conductive layer, and the third electrode is electrically connected to the ion conductive layer; An anti-short-circuit structure is provided in a surrounding area of ​​the third electrode, wherein the anti-short-circuit structure is used to prevent a short circuit between the third electrode and the first conductive layer or the second conductive layer when the light-emitting device is bent; The anti-short circuit structure includes a third anti-short circuit layer provided between the third electrode and the second substrate; the orthographic projection of the third anti-short circuit layer on the second substrate covers the orthographic projection of the portion electrically connected between the third electrode and the ion conductive layer on the second substrate; The third short-circuit prevention layer is provided in the ion conductive layer, or the third short-circuit prevention layer is bonded to the second functional layer and the second conductive layer respectively; or the third short-circuit prevention layer is bonded to the ion conductive layer and the third bonded layer respectively; The third bonded layer includes one of the following: the second functional layer; the second functional layer and the second conductive layer.

17. The light emitting device according to claim 16, characterized in that The anti-short circuit structure further includes a first etching line disposed between the first region and the second region of the first conductive layer, wherein the first etching line is used to insulate the first region from the second region; The first region covers the orthographic projection of the third electrode on the first conductive layer.

18. The light emitting device according to claim 16, characterized in that The anti-short circuit structure includes a second etching line arranged between the third region and the fourth region of the second conductive layer, wherein the second etching line is used to insulate the third region from the fourth region; The third region covers the orthographic projection of the third electrode on the second conductive layer.

19. The light emitting device according to claim 16, wherein: The light emitting device further includes a packaging structure, which is used to prevent the electroluminescent functional layer, the ion conductive layer and the dimming functional layer from contacting the external environment.

20. A vehicle, characterized in that: A light-emitting device comprising the light-emitting device according to any one of claims 1 to 19.

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