Wireless wafer temperature measurement device and temperature measurement method using it

Abstract

A wireless wafer temperature measurement device and a temperature measurement method using the same, the wafer temperature measurement device includes: a single-chip temperature measurement wafer; a temperature acquisition module; wherein the temperature acquisition module includes: a temperature probe, fixed on the temperature measurement surface of the temperature measurement wafer; a data processing unit, fixed on the temperature measurement wafer and coupled to the temperature probe through a data transmission line; a protective cover, fixed on the temperature measurement wafer, the protective cover covers the temperature probe, the data processing unit and the data transmission line, and exposes the remaining positions on the temperature measurement wafer. The protective cover of the embodiment of the present invention can protect the temperature acquisition module, reduce the adverse effects of the process atmosphere on the temperature acquisition module when executing process conditions, and the protective cover exposes the position on the temperature measurement wafer where the temperature acquisition module is not provided, which is also conducive to improving the accuracy of the wafer temperature information obtained by the wireless wafer temperature measurement device.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a wireless wafer temperature measurement device and a temperature measurement method using the same. Background Art

[0002] In the process of integrated circuit manufacturing, temperature is an extremely important parameter, especially as the chip process size continues to decrease, the temperature measurement and control of the wafer surface is extremely important. For example, in the ion implantation process, it is generally necessary to accurately measure the temperature of the wafer in order to accurately control the temperature of the wafer and ensure a good ion implantation effect. Therefore, it is necessary to record the temperature information of the wafer during the processing through a wafer temperature measuring device, so that engineers can adjust the equipment parameters and processes by analyzing this temperature information, so as to improve the yield of chip manufacturing.

[0003] At present, most semiconductor process steps require a vacuum environment, and the requirements for such a vacuum environment are very strict to meet the requirements of temperature balance on the entire wafer surface and uniform process results. Due to the limitations of the vacuum environment, it is difficult to measure the wafer temperature, which leads to poor accuracy of the temperature information obtained during the wafer processing process.

[0004] Therefore, there is an urgent need to provide a wireless wafer temperature measurement device and a temperature measurement method using the same, so as to improve the accuracy of the temperature information obtained when executing the process conditions. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a wireless wafer temperature measurement device and a temperature measurement method using the same, so as to improve the accuracy of temperature information obtained when executing process conditions.

[0006] To solve the above problems, an embodiment of the present invention provides a wireless wafer temperature measurement device, comprising: a single-piece temperature measurement wafer; a temperature acquisition module; wherein the temperature acquisition module comprises: a temperature probe, fixed on the temperature measurement surface of the temperature measurement wafer; a data processing unit, fixed on the temperature measurement wafer and coupled to the temperature probe through a data transmission line; a protective cover, fixed on the temperature measurement wafer, the protective cover covers the temperature probe, the data processing unit and the data transmission line, and exposes the rest of the position on the temperature measurement wafer.

[0007] Correspondingly, an embodiment of the present invention also provides a temperature measurement method using a wireless wafer temperature measurement device, including: obtaining the wafer temperature of the temperature measurement wafer when executing the process conditions through a temperature acquisition module; and obtaining the wafer temperature of the process wafer when executing the process conditions based on the wafer temperature of the temperature measurement wafer.

[0008] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0009] The wireless wafer temperature measuring device provided in an embodiment of the present invention includes: a single temperature measuring wafer, a temperature acquisition module fixedly connected to the temperature measuring wafer, and a protective cover fixed on the temperature measuring wafer, wherein the protective cover covers the temperature probe, the data processing unit and the data transmission line, and exposes the rest of the position on the temperature measuring wafer. Since the protective cover covers the temperature probe, the data processing unit and the data transmission line, the protective cover can protect the temperature acquisition module, reduce the adverse effects of the process atmosphere on the temperature acquisition module when the process conditions are executed, and accordingly help to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device (for example, when the wireless wafer temperature measuring device is applied to the ion implantation process, it can block the bombardment of the ion beam, reduce the impact of the ion beam bombardment on the temperature acquisition module, and accordingly help to reduce the degree of temperature rise of the temperature acquisition module caused by the ion beam bombardment, thereby helping to reduce the probability of the temperature acquisition module being damaged during the temperature measurement process); moreover, because the protective cover exposes the position on the temperature measuring wafer where the temperature probe, the data processing unit and the data transmission line are not provided, the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when the process conditions are executed, thereby also helping to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a schematic diagram of the cross-sectional structure of a wireless wafer temperature measurement device;

[0011] Figure 2 It is a schematic diagram of the top view of the structure of the first embodiment of the wireless wafer temperature measurement device of the present invention;

[0012] Figure 3 yes Figure 2 A schematic diagram of the cross-sectional structure at AA1;

[0013] Figure 4 for Figure 3 A local enlarged view of area B;

[0014] Figure 5 for Figure 3 A local enlarged view of area C;

[0015] Figure 6 It is a schematic cross-sectional structural diagram of a second embodiment of a wireless wafer temperature measurement device of the present invention;

[0016] Figure 7 yes Figure 6 A local enlarged view of area D;

[0017] Figure 8 It is a flow chart of an embodiment of a temperature measurement method using the wireless wafer temperature measurement device of the present invention. DETAILED DESCRIPTION

[0018] At present, the accuracy of the wafer temperature information obtained when executing the process conditions still needs to be improved. Now, combined with a wireless wafer temperature measurement device, the reasons why the accuracy of the wafer temperature information obtained when executing the process conditions still needs to be improved are analyzed. Figure 1 The present invention is a schematic diagram of the cross-sectional structure of a wireless wafer temperature measuring device.

[0019] refer to Figure 1 The wireless wafer temperature measuring device includes: a first wafer 11; a temperature measuring wafer 12, which covers the first wafer 11 and is fixedly connected to the first wafer 11; a temperature acquisition module 13, which is located in the temperature measuring wafer 12 and is fixedly connected to the first wafer 11; a second wafer 14, which covers the temperature measuring wafer 12 and the temperature acquisition module 13 and is fixedly connected to the temperature measuring wafer 12, and the second wafer 14 completely covers the surface of the temperature measuring wafer 12 facing the second wafer 14.

[0020] After research, it was found that, because the second wafer 14 completely covers the surface of the temperature measuring wafer 12 facing the second wafer 14 when executing the process conditions, the wafer temperature of the temperature measuring wafer 12 when executing the process conditions cannot reach the wafer temperature of the process wafer when executing the process conditions. As a result, there is a large difference between the wafer temperature when executing the process conditions obtained by the wireless wafer temperature measuring device and the wafer temperature of the process wafer when executing the process conditions, and accordingly, the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device is poor.

[0021] In order to solve the above technical problems, an embodiment of the present invention provides a wireless wafer temperature measurement device, including: a single-chip temperature measurement wafer; a temperature acquisition module; wherein the temperature acquisition module includes: a temperature probe, fixed on the temperature measurement surface of the temperature measurement wafer; a data processing unit, fixed on the temperature measurement wafer and coupled to the temperature probe through a data transmission line; a protective cover, fixed on the temperature measurement wafer, the protective cover covers the temperature probe, the data processing unit and the data transmission line, and exposes the rest of the position on the temperature measurement wafer.

[0022] The wireless wafer temperature measuring device provided in an embodiment of the present invention includes: a single temperature measuring wafer, a temperature acquisition module fixedly connected to the temperature measuring wafer, and a protective cover fixed on the temperature measuring wafer, wherein the protective cover covers the temperature probe, the data processing unit and the data transmission line, and exposes the rest of the position on the temperature measuring wafer. Since the protective cover covers the temperature probe, the data processing unit and the data transmission line, the protective cover can protect the temperature acquisition module, reduce the adverse effects of the process atmosphere on the temperature acquisition module when the process conditions are executed, and accordingly help to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device (for example, when the wireless wafer temperature measuring device is applied to the ion implantation process, it can block the bombardment of the ion beam, reduce the impact of the ion beam bombardment on the temperature acquisition module, and accordingly help to reduce the degree of temperature rise of the temperature acquisition module caused by the ion beam bombardment, thereby helping to reduce the probability of the temperature acquisition module being damaged during the temperature measurement process); moreover, because the protective cover exposes the position on the temperature measuring wafer where the temperature probe, the data processing unit and the data transmission line are not provided, the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when the process conditions are executed, thereby also helping to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device.

[0023] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0024] Figure 2 is a schematic diagram of a top view of the structure of the first embodiment of the wireless wafer temperature measurement device of the present invention, Figure 3 yes Figure 2 Schematic diagram of the cross-sectional structure at AA1, Figure 4 for Figure 3 A partial enlarged view of area B. Figure 5 for Figure 3 A partial enlarged view of area C.

[0025] refer to Figures 2 to 5 In this embodiment, the wireless wafer temperature measurement device includes: a single temperature measurement wafer 100; a temperature acquisition module 110; wherein the temperature acquisition module 110 includes: a temperature probe 111, fixed on the temperature measurement surface 101 of the temperature measurement wafer 100; a data processing unit 113, fixed on the temperature measurement wafer 100 and transmitted through a data transmission line 114 (such as Figure 3As shown) is coupled to the temperature probe 111; a protective cover 120 is fixed on the temperature measuring wafer 100, the protective cover 120 covers the temperature probe 111, the data processing unit 113 and the data transmission line 114, and exposes the rest of the position on the temperature measuring wafer 100.

[0026] The temperature measuring wafer 100 is used as an object for temperature detection by a temperature probe 111 .

[0027] Since the number of process wafers when executing process conditions is one, the number of temperature measuring wafers 100 is one, so the condition of the temperature measuring wafer 100 when executing the process conditions is close to the condition of the process wafer when executing the process conditions, thereby improving the similarity between the wafer temperature of the temperature measuring wafer 100 when executing the process conditions and the wafer temperature of the process wafer when executing the process conditions.

[0028] Specifically, the temperature measurement wafer 100 has the same specification as the process wafer.

[0029] The same specifications of the temperature measuring wafer 100 and the process wafer refer to: the shape, size and material of the temperature measuring wafer 100 and the process wafer are the same.

[0030] Taking the ion implantation process as an example, the following explains why when there is only one temperature measuring wafer 100 , the condition of the temperature measuring wafer 100 when executing the process condition is close to the condition of the process wafer when executing the process condition.

[0031] Typically during the ion implantation process, the chuck used to hold the process wafer will also cool the process wafer, causing one side of the process wafer to heat up due to ion bombardment, while the other side is cooled. The wafer temperature of the process wafer when executing the process conditions is the combined result of the two.

[0032] When the number of the temperature measuring wafer 100 is one, the temperature measuring wafer 100 is also heated up by ion bombardment on one side and cooled down on the other side, and the wafer temperature of the temperature measuring wafer 100 when executing the process condition is also the result of the combination of the two. Therefore, when the number of the temperature measuring wafer 100 is one, it is beneficial to improve the similarity between the wafer temperature of the temperature measuring wafer 100 when executing the process condition and the wafer temperature of the process wafer when executing the process condition.

[0033] The temperature acquisition module 110 is used to detect the temperature of the temperature measuring wafer 100 and perform data processing on the detected temperature measurement results.

[0034] The temperature probe 111 is used to detect the temperature of the temperature measuring wafer 100 and obtain an analog electrical signal corresponding to the temperature measurement result.

[0035] In this embodiment, the temperature acquisition module 110 includes a plurality of temperature probe groups 112 , which are respectively located at different radii from the center of the temperature measurement wafer 100 . The temperature probe group 112 includes one or more temperature probes 111 .

[0036] The temperature acquisition module 110 includes multiple temperature probe groups 112, which are respectively located at different radii from the center of the temperature measuring wafer 100, which is conducive to detecting the temperature measurement results at different positions of the temperature measuring wafer 100, so as to more comprehensively understand the temperature changes of the temperature measuring wafer 100 during the execution of process conditions.

[0037] It should be noted that the temperature probe group 112 includes a plurality of temperature probes 111 evenly arranged along the circumferential direction.

[0038] The temperature probe group 112 includes a plurality of temperature probes 111 evenly arranged along the circumferential direction, which is beneficial to make the center of gravity of the wireless wafer temperature measurement device coincide with the center of the temperature measurement wafer 100, thereby facilitating improving the structural stability of the wireless wafer temperature measurement device.

[0039] It should also be noted that the temperature probes 111 of different temperature probe groups 112 are staggered in the circumferential direction of the temperature measuring wafer 100 , that is, the connecting line of the temperature probes 111 of any adjacent temperature probe groups 112 does not coincide with the radius of the temperature measuring wafer 100 .

[0040] The temperature probes 111 of different temperature probe groups 112 are staggered in the circumferential direction of the temperature measurement wafer 100 , which is beneficial to increase the distance between adjacent temperature probes 111 , thereby helping to reduce the probability of mutual influence between adjacent temperature probes 111 .

[0041] It is also necessary to explain that the number of the temperature probe groups 112 should not be too large. If the number of the temperature probe groups 112 is too large, the number of the temperature probes 111 will be too large, which will easily lead to the excessive weight of the wireless wafer temperature measuring device, thereby increasing the difficulty of transmitting the wireless wafer temperature measuring device, for example, increasing the difficulty of the chuck stably adsorbing the temperature measuring wafer 100 of the wireless wafer temperature measuring device. Therefore, in this embodiment, the number of the temperature probe groups 112 is two.

[0042] In other embodiments, the temperature measuring surface of the temperature measuring wafer has a first groove; and the temperature probe is arranged in the first groove.

[0043] The temperature probe is arranged in the first groove, which is beneficial to increase the contact area between the temperature probe and the temperature measuring wafer, so that the heat of the temperature measuring wafer is better transferred to the temperature probe, which is beneficial to improve the accuracy of the temperature measurement result detected by the temperature probe.

[0044] In this embodiment, the data processing unit 113 is used to receive the temperature measurement result detected by the temperature probe 111, and send the real-time temperature measurement result in a wireless transmission manner, or convert the real-time temperature measurement result into readable temperature data.

[0045] The converting of the real-time temperature measurement result into readable temperature data refers to: converting the real-time temperature measurement result into temperature data which is locally stored and has a timestamp.

[0046] The wireless wafer temperature measuring device enables the temperature acquisition module 110 to still detect the temperature of the temperature measuring wafer 100 in real time when the temperature measuring wafer 100 moves between different processing stations. Accordingly, the temperature acquisition module 110 can not only obtain the wafer temperature information of the temperature measuring wafer 100 at a certain processing station, but also obtain the wafer temperature information of the temperature measuring wafer 100 when it moves between different processing stations, thereby improving the integrity and accuracy of the wafer temperature information obtained of the temperature measuring wafer 100, and then facilitating the adjustment of equipment parameters and process parameters by analyzing the temperature information, so as to improve the yield and efficiency of wafer manufacturing.

[0047] In this embodiment, the wireless wafer temperature measurement device also includes: a remote information receiving module (not shown), which is independently arranged from the temperature acquisition module 110, and is used to receive real-time temperature measurement results sent by the temperature acquisition module 110, or to obtain readable temperature data stored in the temperature acquisition module 110.

[0048] In this embodiment, the data processing unit 113 is fixed at a preset position on the temperature measuring surface 101 of the temperature measuring wafer 100 .

[0049] The data processing unit 113 is fixed at a preset position on the temperature measuring surface 101 of the temperature measuring wafer 100 , so that the contact area between the data processing unit 113 and the temperature measuring wafer 100 is larger, which is beneficial to reduce the difficulty of fixing the data processing unit 113 and the temperature measuring wafer 100 .

[0050] In this embodiment, in a solution where the data processing unit 113 is fixed at a preset position on the temperature measuring surface 101 of the temperature measuring wafer 100 , the data processing unit 113 is disposed at a central position of the temperature measuring surface 101 of the temperature measuring wafer 100 .

[0051] The data processing unit 113 is disposed at the center of the temperature measuring surface 101 of the temperature measuring wafer 100 , which is beneficial for coinciding the center of gravity of the wireless wafer temperature measuring device with the center of the temperature measuring wafer 100 , thereby further improving the structural stability of the wireless wafer temperature measuring device.

[0052] It should be noted that, in the solution where the data processing unit 113 is fixed on the temperature measuring surface 101 of the temperature measuring wafer 100 , the number of the data processing unit 113 is one.

[0053] The number of the data processing unit 113 is one, which is beneficial to reducing the number of data processing units 113, thereby helping to reduce the cost of manufacturing the wireless wafer temperature measurement device.

[0054] As an example, the number of the data processing unit 113 is one, and it is arranged at the center position of the temperature measuring surface 101 of the temperature measuring wafer 100, so that when the number of the temperature probes 111 is multiple and the multiple temperature probes 111 are arranged at different positions of the temperature measuring wafer 100, it is convenient for the data processing unit 113 to couple with the temperature probes 111 at different positions.

[0055] In this embodiment, the top of the data processing unit 113 contacts the bottom of the protective cover 120 .

[0056] The top of the data processing unit 113 contacts the bottom of the protective cover 120 , so that the data processing unit 113 can also support the protective cover 120 , thereby making the protective cover 120 and the temperature measuring wafer 100 more firmly fixedly connected.

[0057] In other embodiments, the temperature measuring surface of the temperature measuring wafer has a second groove; the data processing unit is fixed on the temperature measuring surface of the temperature measuring wafer and is disposed in the second groove.

[0058] The data processing unit is fixed on the temperature measuring surface of the temperature measuring wafer and is arranged in the second groove, which is beneficial to reducing the distance from the top of the data processing unit to the temperature measuring surface of the temperature measuring wafer. Because the protective cover covers the temperature probe, the data processing unit and the data transmission line, it is also beneficial to reduce the distance from the top of the protective cover to the temperature measuring surface of the temperature measuring wafer, thereby helping to reduce the overall height of the wireless wafer temperature measuring device, and further facilitating the wireless wafer temperature measuring device to pass through the transmission window of the wafer.

[0059] In this embodiment, the data transmission line 114 is fixed on the temperature measuring surface 101 of the temperature measuring wafer 100 .

[0060] The data transmission line 114 is fixed on the temperature measuring surface 101 of the temperature measuring wafer 100 , so as to reduce the difficulty of coupling between the temperature probe 111 and the data processing unit 113 .

[0061] In this embodiment, the data transmission line 114 is used as a connector. In other embodiments, the connector may also be other components that can achieve coupling between the temperature probe and the data processing unit.

[0062] The protective cover 120 covers the temperature probe 111, the data processing unit 113 and the data transmission line 114, so that the protective cover 120 can protect the temperature acquisition module 110, reduce the adverse effects of the process atmosphere on the temperature acquisition module 110 when the process conditions are executed, and accordingly help to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device (for example, when the wireless wafer temperature measuring device is applied to the ion implantation process, it can block the bombardment of the ion beam, reduce the impact of the bombardment of the ion beam on the temperature acquisition module 110, and accordingly help In order to reduce the degree of temperature rise of the temperature acquisition module 110 caused by ion beam bombardment, it is helpful to reduce the probability of the temperature acquisition module 110 being damaged during the temperature measurement process); and because the protective cover 120 exposes the position where the temperature probe 111, the data processing unit 113 and the data transmission line 114 are not provided on the temperature measuring wafer 100, the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when the process conditions are executed, which is also helpful to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device.

[0063] Exposing the remaining positions on the temperature measuring wafer 100 means that the positions on the temperature measuring wafer 100 that do not have the temperature probe 111 , the data processing unit 113 and the data transmission line 114 are exposed outside the protective cover 120 .

[0064] In this embodiment, the material of the protective cover plate 120 is conductive.

[0065] During the process of executing the process (for example, ion implantation process), when the protective cover plate 120 is bombarded by ions, it is easy for charges to accumulate on the protective cover plate 120. If the static charges accumulated on the protective cover plate 120 cannot be eliminated in time, static high voltage is easy to be generated, which is easy to affect the normal operation of the temperature acquisition module 110. Therefore, in this embodiment, the material of the protective cover plate 120 is a conductive material, so that when charges accumulate on the protective cover plate 120, the charges are released through the temperature measuring wafer 100 fixedly connected to the protective cover plate 120 and the chuck used to carry the temperature measuring wafer 100, which correspondingly reduces the probability of generating static high voltage.

[0066] In this embodiment, the material of the protective cover plate 120 includes one or more of silicon, graphite and aluminum.

[0067] The silicon, graphite and aluminum all have good electrical conductivity and are widely used, which is beneficial to reducing process costs.

[0068] As an example, the material of the protective cover plate 120 includes silicon or graphite.

[0069] The material of the protective cover 120 includes silicon or graphite, so that when the protective cover 120 is bombarded with ions during the execution of a process (for example, an ion implantation process), it is not easy to generate metal contamination on the surface of the temperature measuring wafer 100, thereby reducing the probability of the temperature measuring wafer 100 causing temperature changes due to metal contamination, thereby achieving a better effect of improving the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device.

[0070] In other embodiments, the material of the protective cover plate may also be other suitable materials (not prone to metal pollution or less metal pollution) and conductive materials.

[0071] refer to Figure 4 In this embodiment, the wireless wafer temperature measurement device further includes a first heat insulation layer 130 , which is located on the surface of the protective cover 120 facing the temperature measurement wafer 100 .

[0072] During the process of executing the process (for example, ion implantation process), the protective cover plate 120 is bombarded by the ion beam, which causes its temperature to rise, and accordingly the heat of the protective cover plate 120 is transferred to the temperature acquisition module 110 and the temperature measuring wafer 100 by means of thermal radiation. Therefore, in order to reduce the heat transferred to the temperature acquisition module 110 and the temperature measuring wafer 100 by means of thermal radiation, a first thermal insulation layer 130 is provided on the surface of the protective cover plate 120 facing the temperature measuring wafer 100.

[0073] It should be noted that the thickness of the first thermal insulation layer 130 should be minimized if process conditions permit.

[0074] It should also be noted that the thermal radiation coefficient of the material of the first thermal insulation layer 130 should not be too large. When performing ion implantation process conditions, the process chamber is a vacuum chamber, and the heat transfer in the vacuum chamber is mainly thermal radiation. Therefore, when the thermal radiation coefficient of the material of the first thermal insulation layer 130 is small, it is beneficial for the first thermal insulation layer 130 to reduce the heat of the protective cover plate 120 and transfer it to the temperature acquisition module 110 and the temperature measurement wafer 100 by thermal radiation. Therefore, in this embodiment, the thermal radiation coefficient of the material of the first thermal insulation layer 130 is less than or equal to 0.05.

[0075] In a specific embodiment, the material of the first heat insulation layer 130 includes aluminum.

[0076] Aluminum has a low thermal radiation coefficient, is widely used and is easily available, which helps reduce process costs.

[0077] As an example, the first heat insulation layer 130 is aluminum foil.

[0078] refer to Figure 5 In this embodiment, the wireless wafer temperature measurement device further includes: a second thermal insulation layer 131 , located on the surface of the data processing unit 113 facing the temperature measurement wafer 100 .

[0079] The second thermal insulation layer 131 is used to reduce the heat transfer between the temperature measuring wafer 100 and the data processing unit 113, so that the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when executing the process conditions.

[0080] Specifically, the material of the second heat insulation layer 131 includes aluminum.

[0081] The reason why the material of the second heat insulation layer 131 includes aluminum is similar to the reason why the material of the first heat insulation layer 130 includes aluminum, so it is not repeated here.

[0082] In this embodiment, Figures 3 to 5 As shown, the wireless wafer temperature measurement device further includes: a first adhesive 141 located between the data processing unit 113 and the temperature measurement wafer 100 ; and a second adhesive 142 located between the protective cover 120 and the temperature measurement wafer 100 .

[0083] The first adhesive 141 is used for fixed connection between the data processing unit 113 and the temperature measuring wafer 100 ; the second adhesive 142 is used for fixed connection between the protective cover 120 and the temperature measuring wafer 100 .

[0084] Specifically, the second adhesive 142 is conductive.

[0085] The second adhesive 142 is conductive, which is beneficial for accumulating charges on the protective cover 120 so that the charges can be easily conducted to the temperature measurement wafer 100 through the second adhesive 142 .

[0086] It should be noted that the first adhesive 141 is a dot-shaped structure; the second adhesive 142 is a dot-shaped structure.

[0087] The first adhesive 141 is a dot-shaped structure, and the second adhesive 142 is a dot-shaped structure, which is beneficial to reducing the weight of the wireless wafer temperature measuring device. The smaller the weight of the wireless wafer temperature measuring device, the more conducive it is for the chuck to stably adsorb the wireless wafer temperature measuring device. Therefore, the number of the first adhesive 141 and the second adhesive 142 only needs to meet the minimum number requirements for stable fixed connection between the temperature measuring wafer 100 and the temperature acquisition module 110, and between the temperature measuring wafer 100 and the protective cover 120.

[0088] The first adhesive 141 located between the data processing unit 113 and the temperature measuring wafer 100 is a dot structure, which is also beneficial to reducing the heat transfer between the data processing unit 113 and the temperature measuring wafer 100, so that the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when executing the process conditions, which is better.

[0089] Figure 6 is a schematic cross-sectional view of a second embodiment of a wireless wafer temperature measurement device according to the present invention, Figure 7 yes Figure 6 A partial enlarged view of area D.

[0090] The similarities between the second embodiment and the above embodiment are not described in detail here. The difference between the second embodiment and the above embodiment is that the data processing unit 213 is fixed at a preset position outside the edge of the temperature measuring wafer 200 .

[0091] The data processing unit 213 is fixed at a preset position outside the edge of the temperature measuring wafer 200, and the protective cover 220 covers the temperature probe 211, the data processing unit 213 and the data transmission line 214, that is, part of the protective cover 220 does not cover the temperature measuring wafer 200, thereby reducing the area of ​​the temperature measuring wafer 200 covered by the protective cover 220, so that the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when executing the process conditions, which is better and helps to further improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device.

[0092] Moreover, the data processing unit 213 is fixed on the outer side of the edge of the temperature measuring wafer 200, which is also beneficial to reduce the distance from the top of the protective cover 220 to the temperature measuring surface 201 of the temperature measuring wafer 200, thereby helping to reduce the overall height of the wireless wafer temperature measuring device.

[0093] In this embodiment, in a solution where the data processing unit 213 is fixed outside the edge of the temperature measuring wafer 200 , the data processing unit 213 surrounds the entire side wall or part of the side wall of the temperature measuring wafer 200 along the circumference of the temperature measuring wafer 200 .

[0094] The data processing unit 213 surrounds the entire side wall or a portion of the side wall of the temperature measuring wafer 200 along the circumference of the temperature measuring wafer 200 , so that the data processing unit 213 is coupled to the temperature probe 211 .

[0095] Specifically, in the solution in which the data processing unit 213 is fixed on the outer side of the edge of the temperature measuring wafer 200 , there are multiple data processing units 213 , and the multiple data processing units 213 are distributed at intervals along the circumference of the temperature measuring wafer 200 and all surround a portion of the side wall of the temperature measuring wafer 200 .

[0096] There are multiple data processing units 213, which are distributed at intervals along the circumference of the temperature measuring wafer 200 and surround part of the side wall of the temperature measuring wafer 200, which is beneficial to make the center of gravity of the wireless wafer temperature measuring device coincide with the center of the temperature measuring wafer 200, thereby helping to improve the structural stability of the wireless wafer temperature measuring device.

[0097] In other embodiments, the number of the data processing unit may also be one, that is, one data processing unit surrounds the entire side wall or a portion of the side wall of the temperature measuring wafer along the circumference of the temperature measuring wafer.

[0098] In this embodiment, the temperature measuring surface 201 of the temperature measuring wafer 200 has a first groove (not marked); the temperature probe 211 is disposed in the first groove.

[0099] The temperature probe 211 is arranged in the first groove, which is beneficial to increase the contact area between the temperature probe 211 and the temperature measuring wafer 200, so that the heat of the temperature measuring wafer 200 is better transferred to the temperature probe 211, which is beneficial to improve the accuracy of the temperature measurement result detected by the temperature probe 211.

[0100] Moreover, the temperature probe 211 is arranged in the first groove, which is also beneficial to reducing the distance from the top of the temperature probe 211 to the temperature measuring surface 201 of the temperature measuring wafer 200, thereby helping to further reduce the distance from the top of the protective cover 220 to the temperature measuring surface 201 of the temperature measuring wafer 200.

[0101] Specifically, the data transmission line 214 is also located in the first groove.

[0102] The data transmission line 214 is also located in the first groove to facilitate the coupling between the temperature probe 211 and the data processing unit 213 .

[0103] Correspondingly, the present invention also provides a temperature measurement method using the wireless wafer temperature measurement device. Figure 8 It is a flow chart of an embodiment of a temperature measurement method using the wireless wafer temperature measurement device of the present invention.

[0104] refer to Figure 8 , and combined with reference Figures 2 to 5 , execute step S1: obtain the wafer temperature of the temperature measuring wafer 100 when executing the process conditions through the temperature acquisition module 110.

[0105] The temperature acquisition module 110 acquires the wafer temperature of the temperature measuring wafer 100 when executing the process conditions, so as to provide a basis for acquiring the wafer temperature of the process wafer when executing the process conditions.

[0106] refer to Figure 8 , and combined with reference Figures 2 to 5 , execute step S2: according to the wafer temperature of the temperature measuring wafer 100, obtain the wafer temperature of the process wafer when executing the process condition.

[0107] Since the protective cover 120 covers the temperature probe 111, the data processing unit 113 and the data transmission line 114, the protective cover 120 can protect the temperature acquisition module 110, reduce the adverse effects of the process atmosphere on the temperature acquisition module 110 when the process conditions are executed, and correspondingly help to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device (for example, when the wireless wafer temperature measuring device is applied to the ion implantation process, it can block the bombardment of the ion beam, reduce the impact of the bombardment of the ion beam on the temperature acquisition module 110, and correspondingly help to reduce the temperature of the temperature acquisition module 110 caused by the bombardment of the ion beam). degree of temperature rise, thereby helping to reduce the probability of the temperature acquisition module 110 being damaged during the temperature measurement process); moreover, because the protective cover 120 exposes the position on the temperature measuring wafer 100 where the temperature probe 111, the data processing unit 113 and the data transmission line 114 are not provided, the temperature measurement result obtained by the wireless wafer temperature measuring device is closer to the wafer temperature of the process wafer when the process condition is executed, which is also helpful to improve the accuracy of the wafer temperature information obtained by the wireless wafer temperature measuring device, and further improves the accuracy of obtaining the wafer temperature of the process wafer when the process condition is executed according to the wafer temperature of the temperature measuring wafer 100.

[0108] In this embodiment, according to the wafer temperature of the temperature measuring wafer 100, the method for obtaining the wafer temperature of the process wafer when executing the process conditions includes: adjusting the temperature based on the wafer temperature of the temperature measuring wafer 100, and using the temperature value after temperature adjustment as the wafer temperature of the process wafer when executing the process conditions.

[0109] Temperature adjustment is performed based on the wafer temperature of the temperature measuring wafer 100, and the temperature value after temperature adjustment is used as the wafer temperature of the process wafer when executing the process conditions, so that the temperature difference between the wafer temperature of the temperature measuring wafer 100 and the wafer temperature of the process wafer when executing the process conditions can be temperature compensated, which is beneficial to further improve the accuracy of obtaining the wafer temperature of the process wafer when executing the process conditions.

[0110] In other embodiments, the wafer temperature of the temperature measurement wafer is used as the wafer temperature of the process wafer when executing the process conditions.

[0111] In a specific embodiment, before obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions through the temperature acquisition module 110, it also includes: obtaining the first initial temperature of the temperature measuring wafer 100 and the second initial temperature of the process wafer before executing the process conditions; adjusting the temperature based on the wafer temperature of the temperature measuring wafer 100, and using the temperature value after the temperature adjustment as the wafer temperature of the process wafer when executing the process conditions. The method includes: obtaining the second temperature difference between the wafer temperature of the temperature measuring wafer 100 and the first initial temperature, the area of ​​the protective cover 120, and the area of ​​the temperature measuring wafer 100 not covered by the protective cover 120 when executing the process conditions and the second initial temperature; and adjusting the temperature based on the second temperature difference and the second initial temperature.

[0112] First, based on the first temperature difference between the wafer temperature of the temperature measuring wafer 100 and the first initial temperature, the area of ​​the protective cover 120, and the area of ​​the temperature measuring wafer 100 not covered by the protective cover 120, the second temperature difference between the wafer temperature of the process wafer when executing the process conditions and the second initial temperature is obtained, and then the temperature is adjusted based on the second temperature difference and the second initial temperature, which helps to reduce the difficulty of temperature adjustment.

[0113] Specifically, based on the following formula: ΔT / Δt=(A in +A c ) / (A in ), obtain a second temperature difference; wherein Δt is a first temperature difference between the wafer temperature of the temperature measuring wafer 100 when executing the process condition and the first initial temperature, A in is the area of ​​the temperature measuring wafer 100 not covered by the protective cover 120, A c is the area of ​​the temperature measuring wafer 100 covered by the protective cover 120 , and ΔT is the second temperature difference between the wafer temperature of the process wafer when executing the process condition and the second initial temperature.

[0114] Based on the following formula: ΔT / Δt=(A in +A c ) / (A in ), obtaining the second temperature difference is helpful to reduce the difficulty of obtaining the second temperature difference, thereby helping to further reduce the difficulty of temperature adjustment.

[0115] The following takes the case where the process condition is an ion implantation process and the chuck carrying the temperature measurement wafer 100 has a cooling function as an example to explain the process based on the formula: ΔT / Δt=(A in +A c) / (A in ), the reason for obtaining the second temperature difference.

[0116] The temperature change value of the process wafer when executing the process conditions satisfies: ΔT∝(J in +J c -J out ), Δt∝(J in -J out ); wherein ΔT is the second temperature difference between the wafer temperature of the process wafer when executing the process condition and the second initial temperature, J in is the heat added to the portion of the temperature measuring wafer 100 not covered by the protective cover 120 when executing the process conditions, J c The heat added to the portion of the temperature-measuring wafer 100 covered by the protective structure when executing the process conditions, J out is the amount of heat reduced by the cooling function of the chuck, and Δt is a first temperature difference between the wafer temperature of the temperature measuring wafer 100 when executing the process condition and the first initial temperature.

[0117] The J out Assuming it as a constant, then ΔT∝(J in +J c -J out ) can be converted to: ΔT∝(J in +J c ), Δt∝(J in -J out ) can be converted to: Δt∝J in , that is, ΔT / Δt=(J in +J c ) / (J in ).

[0118] The portion of the temperature measuring wafer 100 not covered by the protective cover 120 and the portion of the temperature measuring wafer 100 covered by the protective cover 120 are bombarded with the same ions, so that the heat added by both is only related to the area of ​​both facing the ion beam, that is, ΔT / Δt=(J in +J c ) / (J in ) = (A in +A c ) / (A in ), that is, ΔT / Δt=(A in +A c ) / (A in ).

[0119] It should be noted that the first initial temperature and the second initial temperature are equal; the method for adjusting temperature based on the second temperature difference and the second initial temperature includes: taking the sum of the second temperature difference and the second initial temperature as the temperature value after temperature adjustment.

[0120] When the first initial temperature and the second initial temperature are equal, the sum of the second temperature difference and the second initial temperature is used as the temperature value after temperature adjustment, so as to facilitate temperature adjustment based on the second temperature difference and the second initial temperature.

[0121] Moreover, when the first initial temperature and the second initial temperature are equal, it is also beneficial to reduce the difference between the acquired second temperature difference and the actual second temperature difference, so that the result after adding the second temperature difference and the value of the second initial temperature is closer to the actual wafer temperature of the process wafer when executing the process conditions.

[0122] In this embodiment, before obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions, it also includes: verifying the wireless wafer temperature measuring device to determine whether the wireless wafer temperature measuring device can work normally; when the wireless wafer temperature measuring device can work normally, obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions through the temperature acquisition module 110.

[0123] Before obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions, it also includes: verifying the wireless wafer temperature measuring device to determine whether the wireless wafer temperature measuring device can work normally, which is beneficial to ensuring the reliability of the wireless wafer temperature measuring device, and thus is beneficial to ensuring the reliability of the wafer temperature information obtained by the wireless wafer temperature measuring device.

[0124] Specifically, the method for verifying the wireless wafer temperature measuring device to determine whether the wireless wafer temperature measuring device can work normally includes: setting a temperature sticker on the temperature measuring surface 101 of the temperature measuring wafer 100; obtaining a first detection temperature value through the temperature acquisition module 110, obtaining a second detection temperature value through the temperature sticker, and obtaining a third temperature difference between the first detection temperature value and the second detection temperature value; judging whether the third temperature difference meets the preset requirements, if so, judging that the wireless wafer temperature measuring device can work normally, otherwise, judging that the wireless wafer temperature measuring device cannot work normally; after verifying the wireless wafer temperature measuring device, before obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions through the temperature acquisition module 110, it also includes: removing the temperature sticker on the temperature measuring surface 101 of the temperature measuring wafer 100.

[0125] Since the temperature sticker has high technical maturity and is widely used, obtaining the second detected temperature value through the temperature sticker is conducive to reducing the difficulty of obtaining the second detected temperature value. Before obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions through the temperature acquisition module 110, removing the temperature sticker on the temperature measuring surface 101 of the temperature measuring wafer 100 is conducive to avoiding the influence of the temperature sticker on the temperature acquisition module 110 obtaining the wafer temperature of the temperature measuring wafer 100 when executing the process conditions.

[0126] More specifically, the temperature acquisition module 110 includes: a temperature probe 111, which is fixed on the temperature measuring surface 101 of the temperature measuring wafer 100, and is used to perform contact temperature detection on the temperature measuring wafer 100; in the step of setting a temperature sticker on the temperature measuring surface 101 of the temperature measuring wafer 100, the temperature sticker is located close to the temperature probe 111.

[0127] The temperature sticker is located close to the temperature probe 111, which is beneficial to reducing the degree of temperature difference caused by being at different positions of the temperature measuring wafer 100, thereby helping to reduce the probability of the third temperature difference being interfered by other factors, thereby making the third temperature difference more effective as a basis for judging whether the wireless wafer temperature measuring device can work normally.

[0128] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A wireless wafer temperature measurement device, characterized in that: include: Single-chip temperature measurement wafer; A temperature acquisition module; wherein the temperature acquisition module comprises: a temperature probe fixed on the temperature measuring surface of the temperature measuring wafer; a data processing unit fixed on the temperature measuring wafer and coupled to the temperature probe through a data transmission line; A protective cover is fixed on the temperature measuring wafer, and the protective cover covers the temperature probe, the data processing unit and the data transmission line, and exposes the rest of the position on the temperature measuring wafer. Exposing the rest of the position on the temperature measuring wafer means that the position on the temperature measuring wafer that does not have the temperature probe, the data processing unit and the data transmission line is exposed outside the protective cover.

2. The wireless wafer temperature measurement device according to claim 1, characterized in that: The data processing unit is fixed at a preset position on the temperature measuring surface of the temperature measuring wafer, or fixed at a preset position outside the edge of the temperature measuring wafer.

3. The wireless wafer temperature measurement device according to claim 2, characterized in that: In the solution where the data processing unit is fixed on the temperature measuring surface of the temperature measuring wafer, the data processing unit is arranged at the center of the temperature measuring surface of the temperature measuring wafer; or, In a solution in which the data processing unit is fixed outside the edge of the temperature measuring wafer, the data processing unit surrounds the entire side wall or a portion of the side wall of the temperature measuring wafer along the circumference of the temperature measuring wafer.

4. The wireless wafer temperature measurement device according to claim 3, characterized in that: In the solution where the data processing unit is fixed on the temperature measuring surface of the temperature measuring wafer, the number of the data processing unit is one; or, In the solution where the data processing unit is fixed outside the edge of the temperature measuring wafer, there are multiple data processing units, which are distributed at intervals along the circumference of the temperature measuring wafer and all surround a portion of the side wall of the temperature measuring wafer.

5. The wireless wafer temperature measurement device according to claim 1, characterized in that: The top of the data processing unit contacts the bottom of the protective cover.

6. The wireless wafer temperature measurement device according to claim 1, characterized in that: The temperature measuring surface of the temperature measuring wafer has a first groove; the temperature probe is arranged in the first groove.

7. The wireless wafer temperature measurement device according to claim 2, characterized in that: The temperature measuring surface of the temperature measuring wafer has a second groove; the data processing unit is fixed on the temperature measuring surface of the temperature measuring wafer and is arranged in the second groove.

8. The wireless wafer temperature measurement device according to claim 1, characterized in that: The data processing unit is used to receive the temperature measurement result detected by the temperature probe, and send the real-time temperature measurement result in a wireless transmission manner, or store the real-time temperature measurement result as readable temperature data.

9. The wireless wafer temperature measurement device according to any one of claims 1 to 8, characterized in that: The material of the protective cover plate is conductive.

10. The wireless wafer temperature measurement device according to claim 9, characterized in that: The material of the protective cover plate includes one or more of silicon, graphite and aluminum.

11. The wireless wafer temperature measurement device according to any one of claims 1 to 8, characterized in that: The temperature measurement wafer has the same specifications as the process wafer.

12. The wireless wafer temperature measurement device according to any one of claims 1 to 8, characterized in that: The wireless wafer temperature measurement device also includes a first heat insulation layer located on a surface of the protective cover plate facing the temperature measurement wafer.

13. The wireless wafer temperature measurement device according to claim 12, characterized in that: The material of the first heat insulation layer includes aluminum.

14. The wireless wafer temperature measurement device according to any one of claims 1 to 8, characterized in that: The wireless wafer temperature measuring device also includes: The first adhesive is located between the data processing unit and the temperature measuring wafer; the second adhesive is located between the protective cover and the temperature measuring wafer.

15. The wireless wafer temperature measurement device according to claim 14, characterized in that: The second adhesive is conductive.

16. The wireless wafer temperature measurement device according to claim 14, characterized in that: The first adhesive is a dot-shaped structure; the second adhesive is a dot-shaped structure.

17. The wireless wafer temperature measurement device according to any one of claims 1 to 8, characterized in that: The wireless wafer temperature measurement device further includes: a second heat insulation layer, which is located on a surface of the data processing unit facing the temperature measurement wafer.

18. The wireless wafer temperature measurement device according to claim 17, characterized in that: The material of the second heat insulation layer includes aluminum.

19. The wireless wafer temperature measurement device according to any one of claims 1 to 8, characterized in that: The temperature acquisition module includes a plurality of temperature probe groups, which are respectively located at different radii from the center of the temperature measuring wafer, and the temperature probe group includes one or more temperature probes.

20. The wireless wafer temperature measurement device according to claim 19, characterized in that: The temperature probe group includes a plurality of temperature probes evenly arranged along a circumferential direction.

21. The wireless wafer temperature measurement device according to claim 19, characterized in that: The temperature probes of different temperature probe groups are staggered in the circumferential direction of the temperature measuring wafer.

22. The wireless wafer temperature measurement device according to claim 19, wherein: The number of the temperature probe groups is two.

23. A temperature measurement method using the wireless wafer temperature measurement device according to any one of claims 1 to 22, characterized in that: include: Acquiring the wafer temperature of the temperature measuring wafer when executing the process conditions through a temperature acquisition module; The wafer temperature of the process wafer when executing the process conditions is obtained according to the wafer temperature of the temperature measuring wafer.

24. The temperature measurement method according to claim 23, characterized in that: The method for obtaining the wafer temperature of the process wafer when executing the process conditions according to the wafer temperature of the temperature measuring wafer includes: Performing temperature adjustment based on the wafer temperature of the temperature measuring wafer, and using the temperature value after the temperature adjustment as the wafer temperature of the process wafer when executing the process condition; or, The wafer temperature of the temperature-measured wafer is used as the wafer temperature of the process wafer when the process condition is executed.

25. The temperature measurement method according to claim 24, characterized in that: Before obtaining the wafer temperature of the temperature measuring wafer when executing the process condition through the temperature acquisition module, it also includes: obtaining the first initial temperature of the temperature measuring wafer and the second initial temperature of the process wafer before executing the process condition; The method of adjusting the temperature based on the wafer temperature of the temperature measuring wafer and using the temperature value after the temperature adjustment as the wafer temperature of the process wafer when executing the process condition comprises: According to a first temperature difference between the wafer temperature of the temperature measuring wafer and the first initial temperature, the area of ​​the protective cover, and the area of ​​the temperature measuring wafer not covered by the protective cover, obtaining a second temperature difference between the wafer temperature of the process wafer when executing the process condition and the second initial temperature; Temperature adjustment is performed based on the second temperature difference and the second initial temperature.

26. The temperature measurement method according to claim 25, characterized in that: Based on the following formula: ΔT / Δt=(Ain+Ac) / (Ain), a second temperature difference is obtained; Among them, Δt is the first temperature difference between the wafer temperature of the temperature measuring wafer when executing the process conditions and the first initial temperature, Ain is the area of ​​the temperature measuring wafer not covered by the protective cover, Ac is the area of ​​the temperature measuring wafer covered by the protective cover, and ΔT is the second temperature difference between the wafer temperature of the process wafer when executing the process conditions and the second initial temperature.

27. The temperature measurement method according to claim 25, characterized in that: The first initial temperature and the second initial temperature are equal; The method for performing temperature adjustment based on the second temperature difference and the second initial temperature includes: taking the sum of the second temperature difference and the second initial temperature as the temperature value after temperature adjustment.

28. The temperature measurement method according to claim 23, characterized in that: Before obtaining the wafer temperature of the temperature measuring wafer when executing the process conditions, the method further includes: verifying the wireless wafer temperature measuring device to determine whether the wireless wafer temperature measuring device can work normally; When the wireless wafer temperature measurement device can work normally, the temperature acquisition module is used to obtain the wafer temperature of the temperature measurement wafer when the process conditions are executed.

29. The temperature measurement method according to claim 28, characterized in that: The wireless wafer temperature measuring device is calibrated to determine The method for determining whether the wireless wafer temperature measuring device can work normally comprises: setting a temperature sticker on the temperature measuring surface of the temperature measuring wafer; Acquire a first detected temperature value through the temperature acquisition module, acquire a second detected temperature value through the temperature sticker, and acquire a third temperature difference between the first detected temperature value and the second detected temperature value; Determine whether the third temperature difference meets the preset requirement, if so, determine that the wireless wafer temperature measuring device can work normally, otherwise, determine that the wireless wafer temperature measuring device cannot work normally; After the wireless wafer temperature measuring device is verified, before the temperature of the temperature measuring wafer when executing the process conditions is obtained by the temperature acquisition module, it also includes: removing the temperature sticker on the temperature measuring surface of the temperature measuring wafer.

30. The temperature measurement method according to claim 29, characterized in that: In the step of arranging a temperature sticker on the temperature measuring surface of the temperature measuring wafer, the temperature sticker is located close to the temperature probe.

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