A phase shifter based on hafnium oxide / zinc oxide radio frequency switch and its preparation method

Abstract

The present invention discloses a phase shifter based on a hafnium oxide / zinc oxide radio frequency switch and a method for preparing the same. The phase shifter uses a silicon-based wafer as a carrier, platinum and silver as electrode layers of the radio frequency switch device, and hafnium oxide as the resistive material of the radio frequency switch. The phase shifter comprises a silicon substrate layer, an aluminum nitride layer, a nickel layer, a platinum layer, a hafnium oxide layer, a silver layer, a titanium nitride layer, a nickel layer, and a copper layer, arranged sequentially from bottom to top. Multiple radio frequency switches with transmission lines of the same length are connected in series, and a control circuit is designed for the series structure to generate and send control signals, thereby enabling the phase shifter to perform multi-phase shifting. The present invention utilizes a photolithography process and a PVD magnetron sputtering coating process to prepare the phase shifter on a silicon substrate. The preparation method is simple and low-cost. The prepared phase shifter has excellent performance and good application prospects.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic devices, and in particular to a phase shifter based on a hafnium oxide / zinc oxide radio frequency switch and a preparation method thereof. Background Art

[0002] Phase shifters are key components for controlling the phase of RF signals and are widely used in fields such as phase-shift keying oscillators, phased array radar, and communication systems. Traditional RF phase shifters typically use RF switches based on PIN diodes or metal-insulator-metal (MIM) structures. However, these traditional structures have limitations in high-frequency and high-power applications, such as high power consumption, slow response speed, and high manufacturing costs. These technical issues include the following:

[0003] 1. Consider the specific parameters of the RF switch, such as the size of each part, and whether the ideal performance indicators can be achieved.

[0004] 2. During the preparation of the transmission line layer, attention should be paid to the difficulty of copper stripping.

[0005] 3. How to ensure that the phase shifter maintains highly stable phase accuracy across the entire operating spectrum and that the entire phase shifter system maintains good impedance matching within the designed frequency band. Summary of the Invention

[0006] To solve the above problems, the present invention discloses a phase shifter based on a hafnium oxide / zinc oxide radio frequency switch and a preparation method thereof, which has excellent radio frequency performance, high electron mobility and chemical stability and is applied to the design of a phase shifter to obtain a phase shifter with multi-phase shifting function based on a hafnium oxide / zinc oxide radio frequency switch.

[0007] A phase shifter based on a hafnium oxide radio frequency switch uses a silicon-based wafer as a carrier and includes, from bottom to top, a silicon substrate layer, an aluminum nitride layer, a nickel layer, a platinum layer, a hafnium oxide layer, a silver layer, a titanium nitride layer, a nickel layer, and a copper layer. The phase shifter is connected in series to multiple radio frequency switches with transmission lines of the same length, and a control circuit is designed for the series structure to enable the phase shifter to perform multi-phase shifting.

[0008] Furthermore, the radio frequency switch adopts a platinum-hafnium oxide-silver switch structure.

[0009] Furthermore, the aluminum nitride layer is deposited on the silicon substrate layer to serve as an insulator.

[0010] Furthermore, a nickel layer is plated as an adhesion layer before plating the bottom electrode platinum layer to reduce the difficulty of stripping the transmission line.

[0011] Furthermore, the size of the hafnium oxide layer is larger than that of the upper and lower electrodes to prevent the upper and lower electrodes from contacting and causing a short circuit during the preparation process.

[0012] Furthermore, the titanium nitride layer is deposited on the upper electrode silver layer to prevent oxidation.

[0013] Furthermore, a nickel layer is plated as an adhesion layer before the copper layer is plated to reduce the difficulty of stripping the transmission line.

[0014] Furthermore, a circle of copper layer around the signal transmission line serves as a ground wire structure. The hourglass shape in the middle is the signal transmission line, and a rectangular ring around it is the ground wire.

[0015] A method for preparing a phase shifter based on a hafnium oxide radio frequency switch, the method comprising the following steps:

[0016] Step 1: Use magnetron sputtering coating technology to coat 40nm thick aluminum nitride as an insulating layer on the silicon substrate layer;

[0017] Step 2: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the bottom electrode pattern on the spin-coated photoresist layer;

[0018] Step 3: Use magnetron sputtering technology to plate a 10nm thick nickel layer and a 100nm thick platinum layer on the surface, then place the wafer in acetone solution for ultrasonic treatment, then wash the wafer in ultrapure water, and then wash it in anhydrous ethanol and ultrapure water in sequence, and finally remove the residual photoresist to obtain the mask pattern of the platinum bottom electrode;

[0019] Step 4: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the dielectric layer pattern on the spin-coated photoresist layer;

[0020] Step 5: Use magnetron sputtering coating technology to coat hafnium oxide (5) with a thickness of 60 nm on the surface, then put the wafer into acetone solution for ultrasonic treatment, then put the wafer into ultrapure water for cleaning, and then put it into anhydrous ethanol and ultrapure water for cleaning in sequence, and finally remove the residual photoresist to obtain the mask pattern of the dielectric layer;

[0021] Step 6: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the upper electrode pattern on the spin-coated photoresist layer;

[0022] Step 7: Use magnetron sputtering technology to deposit a 95nm thick silver layer and a 5nm thick titanium nitride layer on the surface. Then, place the wafer in an acetone solution for ultrasonic treatment. After that, the wafer is washed in ultrapure water, and then in anhydrous ethanol and ultrapure water in sequence. Finally, the residual photoresist is removed to obtain the mask pattern of the dielectric layer.

[0023] Step 8: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the transmission line pattern on the spin-coated photoresist layer;

[0024] Step 9: Use magnetron sputtering coating technology to plate a 10nm thick nickel layer and a 100nm thick copper layer on the surface, then place the chip in acetone solution for ultrasonic treatment, then place the chip in ultrapure water for cleaning, and then place it in anhydrous ethanol and ultrapure water for cleaning, and finally remove the residual photoresist to obtain the mask pattern of the transmission line.

[0025] The present invention describes a phase shifter constructed using zinc oxide radio frequency switches. The device uses a silicon wafer as a substrate, platinum and silver as electrode layers, and molybdenum disulfide and zinc oxide as resistive materials. The device comprises, from bottom to top, a silicon substrate layer, an aluminum nitride layer, a platinum layer, a molybdenum disulfide layer, a zinc oxide layer, a silver layer, a titanium nitride layer, a nickel layer, and a copper layer. Multiple radio frequency switches with transmission lines of equal length are connected in series, and a control circuit is designed for this series structure to generate and transmit control signals, enabling the phase shifter to perform multi-phase shifts.

[0026] Furthermore, the phase shifter of the present invention adopts a special switch structure of platinum-molybdenum disulfide-zinc oxide-silver.

[0027] Furthermore, in the phase shifter of the present invention, the aluminum nitride layer is deposited on the silicon substrate layer to serve as an insulator.

[0028] Furthermore, in the phase shifter of the present invention, a nickel layer is first plated as an adhesion layer before plating the bottom electrode platinum layer.

[0029] Furthermore, in the phase shifter of the present invention, the size of the dielectric layer is larger than the size of the upper and lower electrodes to prevent the upper and lower electrodes from contacting and causing a short circuit during the preparation process.

[0030] Furthermore, in the phase shifter of the present invention, the titanium nitride layer is deposited on the upper electrode silver layer to prevent oxidation.

[0031] Furthermore, in the phase shifter of the present invention, a nickel layer is first plated as an adhesion layer before plating the copper layer of the transmission line to reduce the difficulty of peeling the transmission line.

[0032] Furthermore, in the phase shifter of the present invention, a surrounding copper layer serves as a ground structure.

[0033] Furthermore, in the phase shifter of the present invention, multiple radio frequency switches of transmission lines of the same length are connected in series, and a control circuit is designed for the series-connected structure to realize the multi-phase shifting function of the phase shifter.

[0034] The method for preparing a phase shifter based on a zinc oxide radio frequency switch of the present invention comprises the following steps:

[0035] Step 1: Use magnetron sputtering coating technology to coat 80nm thick aluminum nitride as an insulating layer on the silicon substrate;

[0036] Step 2: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the bottom electrode pattern on the spin-coated photoresist layer;

[0037] Step 3: Use magnetron sputtering technology to deposit a 10nm thick nickel layer and a 100nm thick platinum layer on the surface. Then put the wafer into acetone solution for ultrasonic treatment. After that, put the wafer into ultrapure water for cleaning, and then put it into anhydrous ethanol and ultrapure water for cleaning in sequence. Finally, remove the residual photoresist to obtain the mask pattern of the platinum bottom electrode;

[0038] Step 4: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the dielectric layer pattern on the spin-coated photoresist layer;

[0039] Step 5: Use magnetron sputtering technology to deposit a 5nm thick molybdenum disulfide layer and a 60nm thick zinc oxide layer on the surface. Then, place the wafer in an acetone solution for ultrasonic treatment. After that, the wafer is washed in ultrapure water, and then in anhydrous ethanol and ultrapure water in sequence. Finally, the residual photoresist is removed to obtain the mask pattern of the dielectric layer.

[0040] Step 6: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the upper electrode pattern on the spin-coated photoresist layer;

[0041] Step 7: Use magnetron sputtering technology to deposit a 95nm thick silver layer and a 5nm thick titanium nitride layer on the surface. Then, place the wafer in an acetone solution for ultrasonic treatment. After that, the wafer is washed in ultrapure water, and then in anhydrous ethanol and ultrapure water in sequence. Finally, the residual photoresist is removed to obtain the mask pattern of the dielectric layer.

[0042] Step 8: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the transmission line pattern on the spin-coated photoresist layer;

[0043] Step 9: Use magnetron sputtering coating technology to plate a 10nm thick nickel layer and a 100nm thick copper layer on the surface, then place the chip in acetone solution for ultrasonic treatment, then place the chip in ultrapure water for cleaning, and then place it in anhydrous ethanol and ultrapure water for cleaning, and finally remove the residual photoresist to obtain the mask pattern of the transmission line.

[0044] Beneficial effects of the present invention:

[0045] The phase shifter for the RF switch fabricated in this invention features a simple fabrication process, using only photolithography and magnetron sputtering. This makes it easy to operate and readily scalable. Furthermore, the phase shifter is cost-effective, with low material, manufacturing equipment, and labor costs, making the product more competitive in the market. The phase shifter has a simple structure and can achieve different phase shifts in different bands, offering high reconfigurability and controllability. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 Side view of a phase shifter based on a hafnium oxide RF switch.

[0047] Figure 2 Top view of a phase shifter based on a hafnium oxide RF switch.

[0048] In the figure, there are: silicon substrate layer 1, aluminum nitride layer 2, nickel layer 3, platinum layer 4, hafnium oxide layer 5, silver layer 6, titanium nitride layer 7, nickel layer 8, and copper layer 9.

[0049] Figure 3 Process flow chart for phase shifters based on hafnium oxide RF switches.

[0050] Figure 4 Side view of a phase shifter based on a zinc oxide RF switch.

[0051] Figure 5 Top view of a phase shifter based on a zinc oxide RF switch.

[0052] The figure includes: silicon substrate layer 1, aluminum nitride layer 2, nickel layer 3, platinum layer 4, molybdenum disulfide layer 10, zinc oxide layer 11, silver layer 6, titanium nitride layer 7, nickel layer 8, and copper layer 9.

[0053] Figure 6 Process flow chart of phase shifter based on zinc oxide RF switch.

[0054] Figure 7 Simulation diagram of the phase shift accuracy of the 4-phase shifter based on hafnium oxide RF switch in the Ku band. DETAILED DESCRIPTION

[0055] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be understood that the following specific embodiments are intended only to illustrate the present invention and are not intended to limit the scope of the present invention. It should be noted that the terms "front," "rear," "left," "right," "up," and "down" used in the following description refer to directions in the accompanying drawings, and the terms "inward" and "outward" refer to directions toward or away from the geometric center of a particular component, respectively. Example

[0056] like Figure 1-3As shown, the phase shifter of this embodiment uses a silicon-based wafer as a carrier and includes a silicon substrate layer 1, an aluminum nitride layer 2, a nickel layer 3, a platinum layer 4, a hafnium oxide layer 5, a silver layer 6, a titanium nitride layer 7, a nickel layer 8, and a copper layer 9, which are arranged in sequence from bottom to top. The phase shifter adopts a special switch structure of platinum-hafnium oxide-silver. The aluminum nitride layer is deposited on the silicon substrate layer to act as an insulator. The size of the dielectric layer is larger than that of the upper and lower electrodes to prevent the upper and lower electrodes from contacting and causing a short circuit during the preparation process. The titanium nitride layer is deposited on the upper electrode silver layer to act as an anti-oxidation layer. Before plating the copper layer of the transmission line, a nickel layer is first plated as an adhesion layer to reduce the difficulty of peeling the transmission line. A copper layer is also plated around it as a ground wire structure. The phase shifter connects multiple RF switches of the same length of transmission lines in series, and a control circuit is designed for the series structure to realize the multi-phase shift function of the phase shifter.

[0057] The method for preparing a phase shifter based on a hafnium oxide radio frequency switch of the present invention takes the preparation of a four-phase shifter with upper and lower electrodes of 50 μm × 60 μm, a dielectric layer of 50 μm × 50 μm, and a transmission line of 510 μm × 100 μm as an example. The preparation process is as follows:

[0058] Step 1: Use nitrogen to blow away surface impurities from the purchased commercial silicon substrate, and use magnetron sputtering technology to deposit an 80nm thick aluminum nitride layer 2 as an insulating layer on the silicon substrate layer 1;

[0059] Step 2: The silicon substrate with the insulating layer was ultrasonically cleaned (5 minutes each) with acetone, anhydrous ethanol, and ultrapure water, followed by nitrogen blow-drying. A photoresist was first spin-coated on the surface of the silicon substrate with the insulating layer using a spin coater at 600 rpm for 9 seconds, and then at 4000 rpm for 40 seconds. The bottom electrode pattern was then defined on the spin-coated photoresist layer using optical lithography using an MA6 lithography machine.

[0060] Step 3: A nickel layer 3 with a thickness of 10 nm and a platinum layer 4 with a thickness of 100 nm are deposited on the surface using magnetron sputtering technology. The wafer is then placed in an acetone solution for ultrasonic treatment. The wafer is then washed in ultrapure water, followed by washing in anhydrous ethanol and ultrapure water. Finally, the remaining photoresist is removed to obtain a mask pattern for the platinum lower electrode.

[0061] Step 4: After drying with nitrogen, a photoresist is spin-coated on the surface of the silicon substrate with the insulating layer using a spin coater at 600 rpm for 9 seconds, then at 4000 rpm for 40 seconds. Optical lithography is then used to define the dielectric layer pattern on the spin-coated photoresist layer.

[0062] Step 5: A 60nm thick hafnium oxide layer 5 is deposited on the surface using magnetron sputtering technology. The wafer is then ultrasonically treated in an acetone solution. The wafer is then cleaned in ultrapure water, followed by cleaning in anhydrous ethanol and ultrapure water. The remaining photoresist is then removed to obtain a mask pattern for the dielectric layer.

[0063] Step 6: After drying with nitrogen, a photoresist is spin-coated on the surface of the silicon substrate with the insulating layer using a coater at 600 rpm for 9 seconds, then at 4000 rpm for 40 seconds. Optical lithography is then used to define the top electrode pattern on the spin-coated photoresist layer.

[0064] Step 7: A 95nm thick silver layer 6 and a 5nm thick titanium nitride layer 7 are deposited on the surface using magnetron sputtering technology. The wafer is then ultrasonically treated in an acetone solution. The wafer is then cleaned in ultrapure water, followed by cleaning in anhydrous ethanol and ultrapure water. The remaining photoresist is then removed to obtain a mask pattern for the dielectric layer.

[0065] Step 8: After drying with nitrogen, a photoresist is spin-coated on the surface of the silicon substrate with the insulating layer using a spin coater at 600 rpm for 9 seconds, and then at 4000 rpm for 40 seconds. Optical lithography is then used to define the transmission line pattern on the spin-coated photoresist layer.

[0066] Step 9: Use magnetron sputtering coating technology to plate a 10nm thick nickel layer 8 and a 100nm thick copper layer 9 on the surface, then place the wafer in acetone solution for ultrasonic treatment, then place the wafer in ultrapure water for cleaning, and then place it in anhydrous ethanol and ultrapure water for cleaning in turn, and finally remove the residual photoresist to obtain the mask pattern of the transmission line. Example

[0067] like Figure 4-6As shown, the phase shifter of this embodiment uses a silicon-based wafer as a carrier and includes, from bottom to top, a silicon substrate layer, an aluminum nitride layer, a nickel layer, a platinum layer, a molybdenum disulfide layer, a zinc oxide layer, a silver layer, a titanium nitride layer, a nickel layer, and a copper layer. The phase shifter employs a special switch structure of platinum-molybdenum disulfide-zinc oxide-silver. The aluminum nitride layer is deposited on the silicon substrate layer to provide insulation. The dielectric layer is larger than the upper and lower electrodes to prevent short circuits caused by contact between the upper and lower electrodes during the fabrication process. The titanium nitride layer is deposited on the upper electrode silver layer to provide oxidation protection. Before plating the copper layer of the transmission line, a nickel layer is plated as an adhesion layer to reduce the difficulty of peeling the transmission line. A copper layer is also plated around the transmission line as a ground structure. The phase shifter connects multiple RF switches of the same length transmission lines in series, and a control circuit is designed for the series structure to achieve the phase shifter's multi-phase shifting function.

[0068] The method for preparing a phase shifter based on a zinc oxide radio frequency switch of the present invention takes the preparation of a four-phase shifter with upper and lower electrodes of 50 μm × 60 μm, a dielectric layer of 50 μm × 50 μm, and a transmission line of 510 μm × 100 μm as an example. The preparation process is as follows:

[0069] Step 1: Use nitrogen to blow away surface impurities from the purchased commercial silicon substrate, and use magnetron sputtering technology to deposit an 80nm thick aluminum nitride layer 2 as an insulating layer on the silicon substrate layer 1;

[0070] Step 2: The silicon substrate with the insulating layer was ultrasonically cleaned (5 minutes each) with acetone, anhydrous ethanol, and ultrapure water, followed by nitrogen blow-drying. A photoresist was first spin-coated on the surface of the silicon substrate with the insulating layer using a spin coater at 600 rpm for 9 seconds, and then at 4000 rpm for 40 seconds. The bottom electrode pattern was then defined on the spin-coated photoresist layer using optical lithography using an MA6 lithography machine.

[0071] Step 3: A 10nm thick nickel layer 3 and a 100nm thick platinum layer 4 are deposited on the surface using magnetron sputtering technology. The wafer is then placed in an acetone solution for ultrasonic treatment. The wafer is then rinsed in ultrapure water, followed by washing in anhydrous ethanol and ultrapure water. Finally, the remaining photoresist is removed to obtain a mask pattern for the platinum bottom electrode.

[0072] Step 4: After drying with nitrogen, a photoresist is spin-coated on the surface of the silicon substrate with the insulating layer using a spin coater at 600 rpm for 9 seconds, then at 4000 rpm for 40 seconds. Optical lithography is then used to define the dielectric layer pattern on the spin-coated photoresist layer.

[0073] Step 5: A 5nm thick molybdenum disulfide layer 10 and a 60nm thick zinc oxide layer 11 are deposited on the surface using magnetron sputtering technology. The wafer is then ultrasonically treated in an acetone solution. The wafer is then cleaned in ultrapure water, followed by cleaning in anhydrous ethanol and ultrapure water. The remaining photoresist is then removed to obtain a mask pattern for the dielectric layer.

[0074] Step 6: After drying with nitrogen, a photoresist is spin-coated on the surface of the silicon substrate with the insulating layer using a coater at 600 rpm for 9 seconds, then at 4000 rpm for 40 seconds. Optical lithography is then used to define the top electrode pattern on the spin-coated photoresist layer.

[0075] Step 7: A 95nm thick silver layer 6 and a 5nm thick titanium nitride layer 7 are deposited on the surface using magnetron sputtering technology. The wafer is then ultrasonically treated in an acetone solution. The wafer is then cleaned in ultrapure water, followed by cleaning in anhydrous ethanol and ultrapure water. The remaining photoresist is then removed to obtain a mask pattern for the dielectric layer.

[0076] Step 8: After drying with nitrogen, a photoresist is spin-coated on the surface of the silicon substrate with the insulating layer using a spin coater at 600 rpm for 9 seconds, and then at 4000 rpm for 40 seconds. Optical lithography is then used to define the transmission line pattern on the spin-coated photoresist layer.

[0077] Step 9: Use magnetron sputtering coating technology to plate a 10nm thick nickel layer 8 and a 100nm thick copper layer 9 on the surface, then place the wafer in acetone solution for ultrasonic treatment, then place the wafer in ultrapure water for cleaning, and then place it in anhydrous ethanol and ultrapure water for cleaning in turn, and finally remove the residual photoresist to obtain the mask pattern of the transmission line.

[0078] like Figure 7 As shown in the figure, since the phase shifter is composed of multiple identical RF switches connected in series, and the Ku-band is the primary frequency band for early warning radar, a four-phase shifter is used as an example to simulate the phase shift of the phase shifter at Ku-band frequencies. The phase shifter can achieve a phase shift accuracy of 5° between 10° and 25° at Ku-band frequencies (13GHz-18GHz). When only the first switch is turned on, the phase shift is one position, achieving a 10° phase shift; when both switches are turned on, the phase shift is two positions, achieving a 15° phase shift; when all three switches are turned on, the phase shift is three positions, achieving a 20° phase shift; and when all four switches are turned on, the phase shift is four positions, achieving a 25° phase shift.

[0079] The technical means disclosed in the solution of the present invention are not limited to the technical means disclosed in the above-mentioned embodiment, but also include technical solutions composed of any combination of the above technical features.

Claims

1. A phase shifter based on a hafnium oxide / zinc oxide radio frequency switch, characterized in that: The phase shifter uses a silicon-based wafer as a carrier and adopts a platinum-hafnium oxide-silver switch structure; wherein the platinum-hafnium oxide-silver switch structure comprises a silicon substrate layer (1), an aluminum nitride layer (2), a nickel layer (3), a platinum layer (4), a hafnium oxide layer (5), a silver layer (6), a titanium nitride layer (7), a nickel layer (8), and a copper layer (9) arranged in sequence from bottom to top.

2. The phase shifter based on the hafnium oxide / zinc oxide radio frequency switch according to claim 1, characterized in that: Alternatively, a platinum-molybdenum disulfide-zinc oxide-silver switch structure is used; the platinum-molybdenum disulfide-zinc oxide-silver switch structure includes a silicon substrate layer (1), an aluminum nitride layer (2), a nickel layer (3), a platinum layer (4), a molybdenum disulfide layer (10), a zinc oxide layer (11), a silver layer (6), a titanium nitride layer (7), a nickel layer (8) and a copper layer (9) arranged in sequence from bottom to top.

3. A phase shifter based on a hafnium oxide / zinc oxide radio frequency switch according to claim 1 or 2, characterized in that: The phase shifter is connected in series with multiple radio frequency switches of transmission lines of the same length, and a control circuit is designed for the series structure to realize the multi-phase shifting function of the phase shifter.

4. A phase shifter based on a hafnium oxide / zinc oxide radio frequency switch according to claim 1 or 2, characterized in that: The aluminum nitride layer (2) is deposited on the silicon substrate layer (1).

5. The phase shifter based on the hafnium oxide / zinc oxide radio frequency switch according to claim 1, characterized in that: Before plating the bottom electrode platinum layer (4), a nickel layer (3) is first plated as an adhesion layer.

6. The phase shifter based on the hafnium oxide / zinc oxide radio frequency switch according to claim 1, characterized in that: The size of the hafnium oxide layer (5) is larger than the size of the upper and lower electrodes.

7. The phase shifter based on the hafnium oxide / zinc oxide radio frequency switch according to claim 1, characterized in that: The titanium nitride layer (7) is deposited on the upper electrode silver layer (6) to prevent oxidation; a nickel layer (8) is plated as an adhesion layer before the copper layer (9) is plated; and a circle of copper layer (9) around the signal transmission line serves as a ground wire structure.

8. The phase shifter based on the hafnium oxide / zinc oxide radio frequency switch according to claim 2, characterized in that: The sizes of the molybdenum disulfide layer (10) and the zinc oxide layer (11) are both larger than the sizes of the upper and lower electrodes; the titanium nitride layer (7) is deposited on the silver layer (6) of the upper electrode.

9. The phase shifter based on the hafnium oxide / zinc oxide radio frequency switch according to claim 2, characterized in that: A copper layer (9) around the signal transmission line serves as a ground structure.

10. The method for preparing a phase shifter based on a hafnium oxide / zinc oxide radio frequency switch according to any one of claims 1 to 9, characterized in that: The method for preparing a phase shifter of a hafnium oxide radio frequency switch comprises the following steps: Step 1: using magnetron sputtering coating technology to coat a 40 nm thick aluminum nitride layer (2) on the silicon substrate layer (1) as an insulating layer; Step 2: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the bottom electrode pattern on the spin-coated photoresist layer; Step 3: A nickel layer (3) with a thickness of 10 nm and a platinum layer (4) with a thickness of 100 nm are plated on the surface using magnetron sputtering technology, and then the wafer is placed in an acetone solution for ultrasonic treatment, and then the wafer is placed in ultrapure water for cleaning, and then placed in anhydrous ethanol and ultrapure water for cleaning in sequence, and finally the residual photoresist is removed to obtain a mask pattern of the platinum lower electrode; Step 4: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the dielectric layer pattern on the spin-coated photoresist layer; Step 5: A 60 nm thick hafnium oxide layer (5) is deposited on the surface using magnetron sputtering technology, and then the wafer is placed in an acetone solution for ultrasonic treatment. The wafer is then placed in ultrapure water for cleaning, and then placed in anhydrous ethanol and ultrapure water for cleaning in sequence. Finally, the residual photoresist is removed to obtain a mask pattern of the dielectric layer. Step 6: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the upper electrode pattern on the spin-coated photoresist layer; Step 7: A 95 nm thick silver layer (6) and a 5 nm thick titanium nitride layer (7) are plated on the surface using magnetron sputtering technology, and then the wafer is placed in an acetone solution for ultrasonic treatment. The wafer is then washed in ultrapure water, and then in anhydrous ethanol and ultrapure water in sequence. Finally, the residual photoresist is removed to obtain a mask pattern of the dielectric layer. Step 8: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the transmission line pattern on the spin-coated photoresist layer; Step 9: A nickel layer (8) with a thickness of 10 nm and a copper layer (9) with a thickness of 100 nm are plated on the surface using magnetron sputtering technology. The wafer is then placed in an acetone solution for ultrasonic treatment. The wafer is then washed in ultrapure water, followed by washing in anhydrous ethanol and ultrapure water. The remaining photoresist is finally removed to obtain a mask pattern of the transmission line. The method for preparing the phase shifter of the zinc oxide radio frequency switch is as follows: the first step: using magnetron sputtering coating technology to plate a 40nm thick aluminum nitride layer (2) on the silicon substrate layer (1) as an insulating layer; Step 2: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the bottom electrode pattern on the spin-coated photoresist layer; Step 3: A nickel layer (3) with a thickness of 10 nm and a platinum layer (4) with a thickness of 100 nm are plated on the surface using magnetron sputtering technology, and then the wafer is placed in an acetone solution for ultrasonic treatment, and then the wafer is placed in ultrapure water for cleaning, and then placed in anhydrous ethanol and ultrapure water for cleaning in sequence, and finally the residual photoresist is removed to obtain a mask pattern of the platinum lower electrode; Step 4: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the dielectric layer pattern on the spin-coated photoresist layer; Step 5: A 5 nm thick molybdenum disulfide layer (10) and a 60 nm thick zinc oxide layer (11) are deposited on the surface using magnetron sputtering technology, and then the wafer is placed in an acetone solution for ultrasonic treatment. The wafer is then washed in ultrapure water, and then sequentially in anhydrous ethanol and ultrapure water. Finally, the residual photoresist is removed to obtain a mask pattern of the dielectric layer. Step 6: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the upper electrode pattern on the spin-coated photoresist layer; Step 7: A 95 nm thick silver layer (6) and a 5 nm thick titanium nitride layer (7) are plated on the surface using magnetron sputtering technology, and then the wafer is placed in an acetone solution for ultrasonic treatment. The wafer is then washed in ultrapure water, and then in anhydrous ethanol and ultrapure water in sequence. Finally, the residual photoresist is removed to obtain a mask pattern of the dielectric layer. Step 8: Spin-coat photoresist on the surface of the silicon wafer, and then use optical lithography technology to define the transmission line pattern on the spin-coated photoresist layer; Step 9: Use magnetron sputtering coating technology to plate a nickel layer (8) with a thickness of 10nm and a copper layer (9) with a thickness of 100nm on the surface, then put the chip into acetone solution for ultrasonic treatment, then put the chip into ultrapure water for cleaning, and then put it into anhydrous ethanol and ultrapure water for cleaning in turn, and finally remove the residual photoresist to obtain the mask pattern of the transmission line.

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