Epitaxial apparatus, gas inlet method thereof, readable storage medium and computer device

Abstract

The application discloses an epitaxial equipment and an air inlet method thereof, a readable storage medium and a computer device, and relates to the field of semiconductor manufacturing equipment. The epitaxial equipment comprises the following steps: obtaining film thickness values of each region of a wafer; determining gas flow adjustment values of carrier gas output elements corresponding to each region according to the obtained film thickness values of each region; introducing reaction gas into a reaction cavity through a first air inlet structure, and introducing carrier gas into the reaction cavity through a plurality of independently air-inletable carrier gas output elements of a second air inlet structure, wherein the gas flow output by each carrier gas output element is determined after being adjusted according to a preset gas flow according to the gas flow adjustment value, and the carrier gas sprayed by the second air inlet structure can press down at least part of the reaction gas sprayed by the first air inlet structure. The air inlet method of the epitaxial equipment can control the corresponding carrier gas output element to adjust the air flow field in a targeted manner according to the film thickness values of each region of the wafer surface, does not affect the reaction of the reaction gas, and can be accurately adjusted to make the wafer surface thickness more uniform.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing equipment, in particular to an epitaxial equipment, an air inlet method thereof, a readable storage medium and a computer device. BACKGROUND

[0002] Epitaxy is to deposit a thin single crystal layer on a single crystal substrate. The newly deposited layer is called epitaxial layer. Epitaxy provides great flexibility for device designers to optimize device performance, for example, to control the thickness, concentration and profile of the epitaxial layer, which is independent of the silicon wafer substrate. As the device requirements become higher and higher, the thickness uniformity of the epitaxial growth equipment is also required to be higher and higher. At present, there are various methods to adjust the air flow field uniformity of the epitaxial growth equipment, but none of them is ideal and cannot meet the uniformity requirements of high-quality devices. SUMMARY

[0003] In order to solve the problem of non-ideal wafer thickness uniformity, the first aspect of the present application provides an air inlet method of an epitaxial equipment, comprising the following steps:

[0004] Obtaining the film thickness value of each region on the upper surface of the wafer;

[0005] Determining the gas flow adjustment value of the carrier gas output member corresponding to each region according to the film thickness value of each region obtained;

[0006] Passing a preset gas flow of reaction gas into the reaction cavity through a first air inlet structure, wherein the first air inlet structure extends into the reaction cavity from the center of the top of the reaction cavity and can output reaction gas around, passing carrier gas into the reaction cavity through a plurality of independently air-inletable carrier gas output members of a second air inlet structure, wherein the carrier gas output members are arranged around the first air inlet structure and can output carrier gas downward, wherein the gas flow output by each carrier gas output member is determined after the preset gas flow is adjusted according to the gas flow adjustment value, and the carrier gas sprayed by the second air inlet structure can press down at least part of the reaction gas sprayed by the first air inlet structure.

[0007] Optionally, the step of obtaining the film thickness value of each region on the upper surface of the wafer comprises:

[0008] S101: detecting the film thickness value of the to-be-measured position points distributed in each region on the surface of the wafer, wherein the regions are adjacent non-overlapping concentric regions;

[0009] S102: obtaining the film thickness value of each region of the wafer according to the film thickness value of the to-be-measured position points;

[0010] Optionally, the step of determining the gas flow adjustment value of the carrier gas output member corresponding to each region according to the film thickness value of each region obtained comprises:

[0011] S201: determining a target value according to the film thickness value of each region or calling a pre-stored target value;

[0012] S202: calculating the comparison value of each region of the wafer by comparing the film thickness value of each region of the wafer with the target value;

[0013] S203: matching the comparison value of each region with the pre-stored preset comparison value of each region with the preset comparison value in the corresponding relationship between the gas flow adjustment value of the carrier gas output member;

[0014] S204: if the matching is successful, determining the gas flow adjustment value of the carrier gas output member corresponding to each region according to the comparison value of each region and the preset comparison value of each region pre-stored in the corresponding relationship between the gas flow adjustment value of the carrier gas output member.

[0015] Optionally, the step of obtaining the film thickness value of each region of the upper surface of the wafer comprises the following steps:

[0016] The wafer is taken out of the reaction chamber and placed in the film thickness detection device.

[0017] Optionally, the step of introducing the reaction gas with a preset gas flow into the reaction chamber through the first gas inlet structure comprises the following steps:

[0018] The wafer is taken out of the film thickness detection device and placed in the reaction chamber.

[0019] The second aspect of the present application provides an epitaxial device, which applies the gas inlet method of any one of the first aspect of the present application, comprising:

[0020] a reaction chamber, comprising a reaction chamber, a first gas inlet structure and a second gas inlet structure, the first gas inlet structure extends from the top center of the reaction chamber into the reaction chamber and can output reaction gas around, the second gas inlet structure comprises a plurality of independent gas inlets, the carrier gas output member, the carrier gas output member is arranged around the first gas inlet structure and can output carrier gas downward, the carrier gas output member of the second gas inlet structure can press down at least part of the reaction gas output by the first gas inlet structure;

[0021] a film thickness detection device for obtaining the film thickness value of each region of the upper surface of the wafer;

[0022] The controller is configured to determine a gas flow adjustment value of the carrier gas output corresponding to each of the regions according to the acquired film thickness values of the regions, and to control the gas pipeline to introduce the preset gas flow of the reaction gas into the reaction cavity through the first gas inlet structure, and to control the gas pipeline to introduce the carrier gas into the reaction cavity through the second gas inlet structure, wherein the gas flow output by each of the carrier gas outputs is determined according to the preset gas flow and the gas flow adjustment value.

[0023] Optionally, the reaction chamber comprises an upper cover, a base, and a plurality of satellite disks, the upper cover is arranged on the top of the reaction cavity, the upper cover is provided with the first gas inlet structure and the second gas inlet structure, the first gas inlet structure extends into the reaction cavity along the rotation center axis of the base and can spray the reaction gas around, the second gas inlet structure is arranged around the first gas inlet structure and comprises a plurality of independently gas-inletable carrier gas outputs, the base is arranged in the reaction cavity and is arranged in parallel and spaced apart from the upper cover, the plurality of satellite disks are circumferentially distributed on the base, and the plurality of satellite disks are used for carrying wafers, the base can rotate around the rotation center axis of the base with the satellite disks, and the satellite disks can also rotate around the rotation center axis of the satellite disks.

[0024] Optionally, the reaction chamber comprises an upper cover, a base, and a plurality of satellite disks, the upper cover is arranged on the top of the reaction cavity, the upper cover is provided with the first gas inlet structure and the second gas inlet structure, the first gas inlet structure extends into the reaction cavity along the rotation center axis of the base and can spray the reaction gas around, the second gas inlet structure is arranged around the first gas inlet structure and comprises a plurality of independently gas-inletable carrier gas outputs, the base is arranged in the reaction cavity and is arranged in parallel and spaced apart from the upper cover, the plurality of satellite disks are circumferentially distributed on the base, and the plurality of satellite disks are used for carrying wafers, the base can rotate around the rotation center axis of the base with the satellite disks, and the satellite disks can also rotate around the rotation center axis of the satellite disks.

[0025] The third aspect of the present application provides a readable storage medium, which stores a computer program, and the computer program is executed by a processor to realize the gas inlet method of the epitaxial device of any one of the first aspect.

[0026] The fourth aspect of the present application provides a computer device, which comprises a memory, a processor, and a computer program stored on the memory and executable on the processor, and the processor executes the computer program to realize the gas inlet method of the epitaxial device of any one of the first aspect.

[0027] The beneficial effects of the present application: the gas inlet method of the epitaxial equipment of the present application can obtain the film thickness value of each area of the wafer, and can obtain the gas flow size of the corresponding carrier gas output member that needs to be adjusted, so as to accurately control the film growth rate of the specified area of the corresponding wafer surface, and greatly improve the uniformity of the film thickness of each area of the wafer surface. At the same time, the reaction gas is dispersed by the carrier gas, on the one hand, the normal reaction of the preset proportion of the reaction gas will not be damaged; on the other hand, the reaction gas is dispersed more uniformly, so that the final film grows more uniformly in each area of the wafer surface, and through the scheme of increasing the carrier gas output member corresponding to each area of the wafer on the top, the traditional adjustment method can be overturned, and the difficulty of adjusting the film thickness uniformity is greatly reduced. BRIEF DESCRIPTION OF DRAWINGS

[0028] The technical scheme and other beneficial effects of the present application will be apparent from the following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings.

[0029] Figure 1 It is a flowchart of a gas inlet method of an epitaxial equipment in an embodiment of the present application;

[0030] Figure 2 It is a flowchart of a gas inlet method of an epitaxial equipment in an embodiment of the present application;

[0031] Figure 3 It is a flowchart of a gas inlet method of an epitaxial equipment in an embodiment of the present application;

[0032] Figure 4 It is a structural schematic diagram of an epitaxial equipment in an embodiment of the present application;

[0033] Figure 5 It is a structural schematic diagram of a reaction chamber of an epitaxial equipment in an embodiment of the present application;

[0034] Figure 6 It is a structural schematic diagram of a wafer in an embodiment of the present application;

[0035] Figure 7 It is a structural schematic diagram of a wafer in an embodiment of the present application;

[0036] Figure 8 It is a structural schematic diagram of a first gas inlet structure of a reaction chamber of an epitaxial equipment in an embodiment of the present application;

[0037] Figure 9 It is a structural schematic diagram of an upper cover of a reaction chamber of an epitaxial equipment in an embodiment of the present application;

[0038] Figure 10 It is a structural schematic diagram of an upper cover of a reaction chamber of an epitaxial equipment in an embodiment of the present application;

[0039] Figure 11 A wafer film growth thickness curve diagram in an embodiment of the present application.

[0040] Wherein, the reference signs are: 100, reaction chamber; 1, upper cover; 2, reaction cavity; 21, side wall; 3, base; 31, satellite disc; 32, wafer; 321, outer ring area; 322, middle ring area; 323, inner ring area; 4, first gas inlet structure; 41, first gas outlet hole; 5, second gas inlet structure; 51, top gas outlet hole; 52, carrier gas output; 521, inner side carrier gas output; 522, middle carrier gas output; 523, outer side carrier gas output; 6, gas inlet pipeline; 7, rotating mechanism; 8, controller; 9, heating device; 10, film thickness detection device; 11, mechanical arm; 12, through hole. DETAILED DESCRIPTION

[0041] In order to understand the technical content of the present application more clearly, specific embodiments are described below with reference to the accompanying drawings.

[0042] Aspects of the present application are described in the disclosure by reference to the accompanying drawings, in which a number of illustrative embodiments are shown. The embodiments of the present disclosure are not necessarily intended to include all aspects of the present application. It should be understood that a variety of concepts and embodiments as described above, and those described in more detail below, can be implemented in any of numerous ways, as the disclosed concepts and embodiments are not limited to any particular manner of implementation. Also, some aspects of the present application can be utilized independently of other aspects of the present application, or in suitable combination with other aspects of the present application.

[0043] It should be noted that when an element is referred to as being "connected to" or "set on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0044] In addition, the terms "first", "second", and the like, are used only to describe the purpose and are not to be construed as indicating or implying relative importance or a specific number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited. The meaning of "a plurality of" is one or more, unless otherwise specifically limited.

[0045] In the description of the present application, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0046] In the description of the present application, it needs to be understood that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0047] Throughout the specification, reference to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Thus, the appearances of the phrase "in one embodiment", "in some embodiments", or "in some embodiments" in various places throughout the specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0048] In some epitaxial equipment reaction chambers provided with horizontal gas outlet structure, due to the gradual decrease of the concentration of the horizontally sprayed reaction gas along the forward direction with continuous chemical reaction, the film growth rate of the wafer is the highest on the side closest to the horizontal gas outlet structure, and the farther away from the horizontal gas outlet structure, the lower the film growth rate of the wafer. At the same time, due to the continuous rotation of the satellite disc 31 with the wafer, the area closest to the horizontal gas outlet structure on the wafer will be repeatedly deposited by more reaction products after reaction, and the area away from the horizontal gas outlet structure will be repeatedly deposited by less reaction products or even no repeated deposition, so that the film growth on the wafer is very uneven.

[0049] Referring to Figure 1 , the embodiment of the present application provides an epitaxial equipment gas inlet method, comprising the following steps:

[0050] In one embodiment, please refer to Figure 1 , Figure 5 , Figure 9The gas flow adjusting method of the multi-piece planetary semiconductor epitaxial equipment according to any one of the above embodiments comprises the following steps:

[0051] S100: obtaining the film thickness value of each region on the upper surface of the wafer 32;

[0052] S200: determining the gas flow adjusting value of the carrier gas output member 52 corresponding to each region according to the obtained film thickness value of each region;

[0053] S300: introducing the reaction gas with a preset gas flow into the reaction cavity 2 through the first gas inlet structure 4, wherein the first gas inlet structure 4 extends into the reaction cavity 2 from the center of the top of the reaction cavity 2 and can output the reaction gas around; introducing the carrier gas into the reaction cavity through the second gas inlet structure 5, wherein the second gas inlet structure 5 comprises a plurality of carrier gas output members 52 which can independently introduce the carrier gas, the carrier gas output members 52 are arranged around the first gas inlet structure 4 and can output the carrier gas downward, and the gas flow output by each carrier gas output member 52 is determined by adjusting the preset gas flow according to the gas flow adjusting value, and the carrier gas sprayed by the second gas inlet structure 5 can press down at least part of the reaction gas sprayed by the first gas inlet structure 4.

[0054] Specifically, in step S100, the film thickness value of each region on the upper surface of the wafer 32 can be obtained after the film forming process is completed, or can be obtained during the film forming process. Taking the case after the film forming process is completed as an example.

[0055] As an implementation manner, please refer to Figure 2 Step S100 further comprises:

[0056] Step S101: detecting the film thickness value of the to-be-measured position points distributed in each region on the surface of the wafer 32, wherein the regions are adjacent and non-overlapping concentric regions;

[0057] Step S102: obtaining the film thickness value of each region of the wafer according to the film thickness value of the to-be-measured position points.

[0058] In one embodiment, a plurality of to-be-measured position points can be selected along the diameter direction of the wafer 32 and distributed in all regions on the surface of the wafer 32. For example, when there are three regions, at least three points are selected as to-be-measured position points, and at least three points are located in three different regions. In other embodiments, the plurality of to-be-measured position points can be selected in other distribution forms, which are not limited as long as all regions are covered. It should be noted that please refer to Figure 6, the surface of the wafer 32 is divided into a plurality of continuous line segments, each of which forms a plurality of adjacent non-overlapping concentric regions when rotated once around the center of the wafer, each of the regions corresponding to one or more of the carrier gas output members 52. It is understood that the length of the plurality of continuous line segments is not limited, as an example, the radius of 9 cm can be divided into 3 line segments, for example, 3 cm each. As another example, please refer to Figure 7 , the radius of 11 cm can be divided into 1 line segment of 2 cm from the inside to the outside, 1 line segment of 2 cm, 1 line segment of 3 cm, and 1 line segment of 4 cm. The gas flow coverage area of the corresponding carrier gas output member 52 also needs to be adjusted, so that the gas flow sprayed by each carrier gas output member 52 can cover the concentric region formed by rotating one line segment around the center of the wafer 32.

[0059] The wafer 32 refers to any substrate on which film formation processing is performed during the manufacturing process. The substrate includes a wafer 32 or is described as a wafer, a substrate, an epitaxial wafer, a base plate, etc. The material on which film formation processing can be performed includes materials such as silicon, silicon carbide, silicon oxide, strained silicon, carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, gallium nitride, glass, sapphire, and any other material such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the specific application. The wafer 32 usually has a circular or approximately circular surface.

[0060] In one embodiment, please refer to Figure 4 , the film thickness detection device 10 is arranged outside the reaction chamber 100, and the wafer 32 is taken out of the reaction chamber 100 and placed in the film thickness detection device 10 before the film thickness detection device 10 detects the film thickness values of a plurality of to-be-measured position points on the surface of the wafer 32. The wafer 32 can be taken and placed by a mechanical arm 11, the mechanical arm 11 is electrically connected with the controller 8 and controlled by the controller 8 to move, rotate, clamp, release, etc. The mechanical arm 11 is arranged between the film thickness detection device 10 and the reaction chamber 100. It is understood that the wafer 32 can be placed back into the reaction chamber 100 from the film thickness detection device 10 by the mechanical arm 11 after the gas flow adjustment value of each carrier gas output member 52 is determined.

[0061] In one embodiment, the film thickness detection device 10 is arranged inside the reaction chamber 100, and the wafer 32 does not need to be taken out of the reaction chamber 100.

[0062] In one embodiment, the controller 8 controls the film thickness detection device 10 to detect the film thickness value of the wafer 32. The film thickness detection device 10 can be a Fourier Transform Infrared Spectrometer (FTIR) or other devices without limitation.

[0063] In one embodiment, the step S102 comprises: obtaining the film thickness value of each region of the wafer according to the film thickness value of the to-be-detected position point. Specifically, when the number of to-be-detected position points is equal to the number of regions divided on the wafer 32 and one to-be-detected position point is distributed in each region, the film thickness value of the to-be-detected position point is taken as the film thickness value of the region of the wafer 32 where the to-be-detected position point is located. In another embodiment, when the number of to-be-detected position points is greater than the number of regions divided on the wafer 32, the film thickness value of the to-be-detected position point collected in each region needs to be calculated in the controller 8 to obtain the film thickness value of the region, for example, the weighted average of the film thickness values of all to-be-detected position points in each region is taken as the film thickness value of the region, or the standard deviation of all to-be-detected position points of the wafer 32 is calculated first, then the film thickness value of the position point with larger standard deviation is removed, and then the weighted average of the film thickness values of all to-be-detected position points in each region is taken as the film thickness value of the region. It can be understood that other statistical methods can also be used to calculate the film thickness value of each region.

[0064] The step S200 comprises: determining the gas flow adjustment value of the carrier gas output member 52 corresponding to each region according to the obtained film thickness value of each region. It needs to be explained that the step S200 can obtain the gas flow adjustment value of each carrier gas output member according to the film thickness value of each region, so that the gas flow field can be accurately adjusted according to the film thickness of each region on the wafer 32. It needs to be explained that the corresponding relationship between the region and the carrier gas output member 52 means that the carrier gas output by the carrier gas output member 52 can affect the gas flow field of a region on the wafer 32. As an example, the number of carrier gas output members 52 of the reaction chamber 100 is equal to the number of regions of the wafer 32 and one-to-one corresponding, and each carrier gas output member 52 is located directly above the corresponding region of the wafer 32, so that the corresponding relationship between the two is established.

[0065] As an implementation, please refer to Figure 3 The step S200 comprises the following steps:

[0066] The step S201 comprises: determining a target value according to the film thickness value of each region or calling a pre-stored target value.

[0067] As an example, the target value is an average of the film thickness values of the regions obtained in step S102. As another example, the target value is an average of the film thickness values of the plurality of measurement points calculated by the controller 8 and divided by the number of the measurement points. It is understood that the target value can also be a weighted average. As another implementation, the pre-stored target value is a pre-stored target value obtained by experience or big data or other appropriate means. The target value can be obtained by either pre-storing or calculating.

[0068] Step S202: Calculate the comparison value of each region of the wafer 32 by comparing the film thickness value of each region of the wafer 32 with the target value.

[0069] Specifically, the comparison value includes but is not limited to the difference between the film thickness value of each region and the target value, or the ratio of the difference to the target value, or the ratio of the film thickness value of the measurement point to the target value, or other forms of comparison value. The difference is calculated by the controller 8 by subtracting the film thickness value of each measurement point from the target value. The difference ratio is obtained by dividing the difference by the target value. For example, the difference is not limited to -2 μm, -1 μm, 0 μm, 1 μm, 2 μm, etc., and the difference ratio is not limited to -2%, -1%, 0, 1%, 2%, etc., and the ratio of the film thickness value of the measurement point to the target value is not limited to -102%, -101%, 100%, 101%, 102%, etc.

[0070] Step S203: Match the comparison value of each region with the pre-stored preset comparison value of each region with the gas flow adjustment value of the carrier gas output corresponding relationship of the preset comparison value.

[0071] Specifically, the controller 8 pre-stores the preset comparison value of each region with the gas flow adjustment value of the carrier gas output corresponding relationship, wherein the preset comparison value of each region can be a plurality of specific values or a plurality of threshold ranges, for example, Q E、 Q E+1、 Q E+2……、 Q E+Fwherein E, F are natural numbers. Further, the plurality of threshold ranges are sequentially and continuously increased. For example, when the preset comparison value is a threshold range, and when the preset comparison value is a difference value, the five threshold ranges of Q1 to Q5 can be selected, Q1 < -1.5 μm, -1.5 μm ≤ Q2 < -0.5 μm, -0.5 μm ≤ Q3 < 0.5 μm, 0.5 μm ≤ Q4 < -1.5 μm, Q5 ≥ 1.5 μm. Wherein, Q1, Q3, Q5 are not in the threshold range to be adjusted, Q1 and Q5 represent that the error is too large, and other means are needed to eliminate the error, Q3 is a reasonable error, and no adjustment is needed, Q2 and Q4 are the threshold ranges to be adjusted. It can be understood that when the comparison value is a difference ratio, the above Q1 to Q5 are percentage ranges, for example, Q1 ≤ -1.5%, -1.5% ≤ Q2 < -0.5%, -0.5% ≤ Q3 < 0.5%, 0.5% ≤ Q4 < 1.5%, Q5 ≥ 1.5%. This step is that the controller 8 matches the comparison value of each of the regions obtained in step S202 with the preset comparison value in the preset comparison value and gas flow adjustment value corresponding relationship of the carrier gas output. As an example, the region can be queried first for matching, and if the region matching is successful, the preset comparison value corresponding to the region is queried for matching. It can be understood that the preset comparison value can also be queried first for matching, and if the matching is successful, the region to which it belongs is queried for matching.

[0072] The plurality of threshold ranges are set in this embodiment, so that different operations are taken according to different difference values or difference ratios of the film thickness values of the to-be-measured position points and the target values, the carrier gas output 52 gas flow can be more accurately adjusted, so as to adjust the gas flow field in the reaction chamber 2, and make the film thickness values of each region on the surface of the wafer 32 more uniform.

[0073] Step S204: If the matching is successful, the gas flow adjustment value of the carrier gas output corresponding to the region is determined according to the comparison value of each of the regions and the preset comparison value and gas flow adjustment value corresponding relationship of each of the regions.

[0074] Specifically, if the comparison value of each region obtained is equal to or within the preset comparison value range, it means that the matching is successful. The controller 8 queries the preset comparison value and gas flow adjustment value corresponding relationship of each of the regions according to the comparison value of each of the regions, and finally determines the gas flow adjustment value of the carrier gas output corresponding to the region.

[0075] Step S300: introducing the reaction gas with the preset gas flow into the reaction cavity 2 through the first gas inlet structure 4, wherein the first gas inlet structure 4 extends from the center of the top of the reaction cavity 2 into the reaction cavity 2 and can output the reaction gas around; introducing the carrier gas into the reaction cavity 2 through the plurality of independently gas-inletable carrier gas output members 52 of the second gas inlet structure 5, wherein the carrier gas output members 52 are arranged around the first gas inlet structure 4 and can output the carrier gas downward, and the gas flow output by each carrier gas output member 52 is determined by adjusting the preset gas flow according to the gas flow adjustment value; and the carrier gas sprayed by the second gas inlet structure 5 can press down at least part of the reaction gas sprayed by the first gas inlet structure 4.

[0076] Specifically, the controller 8 controls the gas inlet pipeline 6 to introduce the reaction gas with the preset gas flow into the reaction cavity 2 through the first gas inlet structure 4, wherein the first gas inlet structure 4 extends from the center of the top of the reaction cavity 2 into the reaction cavity 2 and can output the reaction gas around; and the controller 8 also controls the gas inlet pipeline 6 to introduce the carrier gas into the reaction cavity 2 through the plurality of independently gas-inletable carrier gas output members 52 of the second gas inlet structure 5, wherein the carrier gas output members 52 are arranged around the first gas inlet structure 4 and can output the carrier gas downward. It should be noted that the gas flow output by each carrier gas output member 52 is determined by adjusting the preset gas flow according to the gas flow adjustment value, which means that the controller 8 adjusts the final gas flow to be output on the basis of the preset gas flow according to the gas flow adjustment value obtained in step S204. For example, the originally preset gas flow is 150 SCCM, the determined gas flow adjustment value is +50 SCCM, and the final output gas flow is 200 SCCM. Finally, the controller 8 controls the gas inlet pipeline 6 to output the carrier gas through each carrier gas output member 52.

[0077] For example, the controller 8 pre-stores the preset comparison value of each region and the corresponding relationship between the gas flow adjustment value of each carrier gas output member. For example, when the comparison value is the difference value, and the preset comparison values are: Q1<-1.5 μm, -1.5 μm≤Q2<-0.5 μm, -0.5 μm≤Q3<0.5 μm, 0.5 μm≤Q4<-1.5 μm, and Q5≥1.5 μm. Assuming that the difference value is 0.8 μm, i.e., the target value minus the film thickness value of the region is 0.8 μm, which falls within the Q4 threshold range of 0.5-1.5 μm, the corresponding gas flow adjustment mode is that the gas flow of the carrier gas of the carrier gas output member 52 corresponding to the region is reduced by 50 SCCM; the gas flow adjustment mode corresponding to Q2 is that the gas flow of the carrier gas of the carrier gas output member 52 corresponding to the region is increased by 50 SCCM, and Q1, Q3, and Q5 do not need to be operated.

[0078] The gas inlet method of the epitaxial device of the embodiment can obtain the gas flow size that the carrier gas output member 52 corresponding to each region needs to adjust by obtaining the film thickness value of each region of the wafer 32, so as to accurately control the film growth rate of the specified region on the surface of the corresponding wafer 32, and greatly improve the uniformity of the film thickness of each region on the surface of the wafer 32. At the same time, the reaction gas is dispersed by the carrier gas, on the one hand, the preset proportion of the reaction gas will not be damaged, and on the other hand, the reaction gas is more uniformly dispersed, so that the final film grows more uniformly on each region of the wafer 32. At the same time, by increasing the carrier gas output member 52 corresponding to each region of the wafer 32 above, the adjustment method can be simplified, and the difficulty of adjusting the uniformity of the film growth is greatly reduced.

[0079] As an example, Table 1 shows the preset comparison value of each region of a wafer 32 with three regions and the corresponding relationship between the gas flow adjustment value of the carrier gas output member. The controller 8 has the corresponding relationship stored in advance. When the film thickness value of each to-be-detected position point is obtained, the comparison value is obtained by subtracting the target value from the film thickness value of each region, and the gas flow adjustment value is found according to the comparison value in the table and the corresponding relationship of the carrier gas output member 52, and then the gas flow of the corresponding carrier gas output member 52 is adjusted.

[0080] Table 1: Corresponding relationship between preset comparison value of each region of wafer 32 and gas flow adjustment value of carrier gas output member 52

[0081]

[0082] Please refer to Figure 6 , it is assumed that the actual film thickness values of the five positions S1-S5 on the surface of the wafer 32 are 11 μm, 12 μm, 13 μm, 12 μm and 12 μm, and the wafer 32 is provided with three regions, wherein S1 belongs to the outer ring region 321, S2 and S3 belong to the middle ring region 322, and S4 and S5 belong to the inner ring region 323. In an embodiment, the target value of the film thickness of each region is set to 12 μm. Alternatively, in other embodiments, the target value of the film thickness is the average value of the film thickness calculated by the controller based on the sum of the film thickness values of the five positions S1-S5 divided by 5, which is also 12 μm in the embodiment. It can be understood that in other embodiments, the target value can also be the average value of the film thickness of each region, that is, the film thickness of the outer ring region 321 is 11 μm, the average value of S2 and S3 is 12.5 μm, the film thickness of the middle ring region 322 is 12 μm, and the target value is 11.8 μm.

[0083] In the embodiment, please refer to Figure 6 , Figure 9 , Figure 10, the target value is calculated by adding the film thickness values of the five positions according to S1-S5 and dividing by 5, i.e. 12 μm, the controller 8 pre-stores five preset comparison values of Q1-Q5 of each region, i.e. five threshold ranges, Q1<-1.5 μm, -1.5 μm≤Q2<-0.5 μm, -0.5 μm≤Q3<0.5 μm, 0.5 μm≤Q4<-1.5 μm, Q5≥1.5 μm, then the comparison values (here the difference is selected) of the three film thickness values of the outer ring region 321 to the inner ring region 323 and the target value are-1 μm, 0.5 μm, 0 μm respectively, then the film thickness values of the outer ring region 321, the middle ring region 322 and the inner ring region 323 are within the threshold ranges Q2, Q4 and Q3 respectively, then the controller 8 queries the pre-stored corresponding relationship (Table 1) of the film thickness values of each region of the wafer 32 surface and the gas flow adjustment values of the corresponding carrier gas output member 52, and it is known that the comparison values of the outer ring region 321 and the middle ring region 322 are within the threshold range that needs to be adjusted, and the inner ring region 323 does not need to be adjusted. In this embodiment, the second gas inlet structure 5 is provided with three carrier gas output members, i.e. the inner side carrier gas output member 521, the middle carrier gas output member 522 and the outer side carrier gas output member 523, the outer ring region 321 corresponds to the inner side carrier gas output member 521, the middle ring region 322 corresponds to the middle carrier gas output member 522, and the inner ring region 323 corresponds to the outer side carrier gas output member 523. It is known from the query of the preset comparison values of each region and the gas flow adjustment values of the carrier gas output member 52 that the inner side carrier gas output member 521 needs to increase the gas flow by 50 SLM respectively, then the controller 8 controls the inner side carrier gas output member 521 to increase the flow of the carrier gas by 50 SCCM, assuming that the original preset gas flow is 200 SCCM, then the output gas flow is 250 SCCM. The middle carrier gas output member 522 needs to reduce the flow by 75 SCCM, the controller 8 controls the middle carrier gas output member 522 to reduce the flow of the carrier gas by 75 SCCM, assuming that the original preset gas flow is 200 SCCM, then the output gas flow is 125 SCCM. The method of the present application can control the gas inlet of each carrier gas output member 52 individually, can adjust the gas flow of each region corresponding to the carrier gas output member 52 according to the film thickness detection results of each region, can accurately control the gas flow field of each region on the wafer 32 surface, so that the film thickness of each region on the wafer 32 surface is more uniform.

[0084] Figure 11Figure 6 is a film growth thickness curve diagram, wherein "the present application" is the film thickness curve of the wafer 32 surface of the epitaxial device of the present application using the above-mentioned gas inlet method of the epitaxial device, "comparative experiment 1" is the film thickness curve of the wafer 32 surface of the epitaxial device without the second gas inlet structure 5, only retaining the first gas inlet structure 4 and using the conventional gas inlet method, without adjusting the thickness of each region of the wafer 32. It can be seen from the figure that the film thickness uniformity of the epitaxial device using the gas inlet method of the present application is obviously better than that of comparative experiment 1.

[0085] Figure 4 Figure 1 is a schematic diagram of an epitaxial device using the gas inlet method of the present application, the epitaxial device comprising:

[0086] Figure 2 is a schematic diagram of a reaction chamber 100 of the epitaxial device, please refer to Figure 5 、 Figure 9 , comprising a reaction chamber 2, a first gas inlet structure 4 and a second gas inlet structure 5, the first gas inlet structure 4 extends from the center of the top of the reaction chamber 2 into the reaction chamber 2 and can output reaction gas around, the second gas inlet structure 5 comprises a plurality of independently gas-inletable carrier gas output members 52, the carrier gas output members 52 are arranged around the first gas inlet structure 4 and can output carrier gas downward, the carrier gas sprayed by the second gas inlet structure 5 can press down at least part of the reaction gas sprayed by the first gas inlet structure 4;

[0087] Figure 3 is a schematic diagram of a film thickness detection device 10 of the epitaxial device, for obtaining the film thickness value of each region of the upper surface of the wafer 32;

[0088] Figure 4 is a schematic diagram of a controller 8 of the epitaxial device, for determining the gas flow adjustment value of the carrier gas output member corresponding to each region according to the obtained film thickness value of each region; and for controlling the gas inlet pipeline 6 to introduce the reaction gas with a preset gas flow into the reaction chamber 2 through the first gas inlet structure 4, and for controlling the gas inlet pipeline 6 to introduce the carrier gas into the reaction chamber through the plurality of independently gas-inletable carrier gas output members 52 of the second gas inlet structure 5, wherein the gas flow output by each carrier gas output member 52 is determined by adjusting the preset gas flow according to the gas flow adjustment value.

[0089] In one embodiment, please refer to Figure 10 , the second gas inlet structure 5 comprises a plurality of carrier gas output members 52, each carrier gas output member 52 comprises one circle of top gas outlet holes 51, and gas can flow into the reaction chamber 2 through the top gas outlet holes 51.

[0090] In some embodiments, each carrier gas output member 52 comprises two or three adjacent circles of top gas outlet holes 51, and the number of circles of top gas outlet holes 51 can be set as needed and is not limited.

[0091] In some embodiments, please refer toFigure 5 The reaction chamber 100 for the epitaxial process includes an upper cover 1, a reaction chamber 2, a base 3, and multiple satellite disks 31. The reaction chamber 2 defines a process environment space. The upper cover 1 is disposed on the top of the reaction chamber 2. The base 3 is rotatably disposed in the reaction chamber 2 and is spaced apart from and parallel to the upper cover 1. Furthermore, the base 3 can rotate around the rotation center axis c of the base 3. Multiple satellite disks 31 are circumferentially distributed on the base 3. The satellite disks 31 are used to carry wafers 32. The number of satellite disks 31 can be 4, 5, 6, 7, etc. and is not limited. The satellite disks 31 can rotate around the rotation center axis c of the base 3 and can also rotate around the rotation center axis d of the satellite disks 31. The base 3 rotates, optionally at a speed of 20-100 rpm, and the satellite disks 31 rotate, optionally at a speed of 200-800 rpm.

[0092] In one embodiment, see Figure 8 、 Figure 9 The upper cover 1 is provided with a through hole 12 for the first air inlet structure 4 to pass through. The first air inlet structure 4 extends through the upper cover 1 into the reaction chamber 2. The first air inlet structure 4 includes multiple first air inlet channels (not shown). The carrier gas output element 52 of the second air inlet structure 5 is arranged vertically. The first air inlet structure 4 includes a dense array of first air outlet holes 41 along its outer circumference. The first air outlet holes 41 are arranged in multiple layers from top to bottom, with each layer of first air outlet holes 41 communicating with a first air inlet channel. The first air outlet holes 41 are all arranged horizontally.

[0093] The second air intake structure 5 is provided on the upper cover 1. The second air intake structure 5 surrounds the central axis of the first air intake structure 4 and is spaced apart from the first air intake structure 4. In one embodiment, the second air intake structure 5 is arranged in a ring on the upper cover 1. Optionally, the first air intake structure 4 and the second air intake structure 5 are spaced apart in the horizontal direction by 50mm-500mm, further, 60mm-200mm, and further, 80mm-120mm. The second air intake structure 5 includes a plurality of top air outlet holes 51 opened on the bottom surface of the upper cover 1 toward the reaction chamber 2 and used to spray out the carrier gas, and the top air outlet holes 51 are evenly arranged on multiple concentric circles distributed outward from the rotation center axis c of the base 3. It should be noted that being evenly arranged on multiple concentric circles means that the top air outlet holes 51 on each circle are evenly distributed.

[0094] In some embodiments, see Figure 10 The number of the top air outlet holes 51 on each concentric circle is the same, and the top air outlet holes 51 are radially distributed along multiple evenly distributed radial directions.

[0095] The second gas inlet structure 5 comprises a plurality of independently gas-inletable carrier gas outlets 52, each of which comprises a plurality of top gas outlet holes 51 on one or more adjacent concentric circles. One or more carrier gas outlets 52 correspond to one area on the wafer 32, and the film growth rate of the area on the wafer 32 corresponding to the carrier gas outlet 52 can be adjusted by changing the gas flow of the carrier gas outlet 52. It should be noted that one or more carrier gas outlets 52 correspond to one area on the wafer 32 means that the gas flow sprayed by each carrier gas outlet 52 can affect the film growth rate of a specified area on the wafer 32, and in some embodiments, it can be understood that the gas flow sprayed can cover the area on the wafer 32. All areas on the wafer 32 have corresponding carrier gas outlets 52, and the film growth rate of a specified area can be affected by adjusting the carrier gas flow of any carrier gas outlet 52.

[0096] Please refer to Figure 9 A first gas inlet channel of the first gas inlet structure 4 is individually communicated with one gas inlet pipeline 6, and all the first gas inlet channels are communicated with gas inlet pipelines 6. One carrier gas outlet 52 of the second gas inlet structure 5 is individually communicated with one gas inlet pipeline 6, and all the carrier gas outlets 52 are communicated with gas inlet pipelines 6. Each gas inlet pipeline 6 is individually provided with a flow controller (not shown), which can be a mass flow controller (MFC) for example, and the flow controller is connected with the controller 8, so as to control the gas flow of the carrier gas, the reaction gas (at least one of the first precursor gas and the second precursor gas), and the doping gas as needed. In this way, the gas flow in each first gas inlet channel / carrier gas outlet 52 can be controlled by the controller 8, so as to realize independent gas inlet of each carrier gas outlet 52.

[0097] In one embodiment, the wafer 32 can be taken and placed by a mechanical arm 11, which is electrically connected with the controller 8 and controlled by the controller 8 to move, rotate, clamp, release, and the like. The mechanical arm 11 is arranged between the film thickness detection device 10 and the reaction chamber 100.

[0098] In one embodiment, the reaction chamber 100 comprises a sidewall 21 below the upper cover 1, and the sidewall 21 and the upper cover 1 jointly enclose the reaction cavity 2. The upper cover 1 and the sidewall 21 can be made of quartz or other high-temperature-resistant materials. In one embodiment, a rotating mechanism 7 is arranged at the lower center of the susceptor 3, and the rotating mechanism 7 can drive the susceptor 3 to rotate. The bottom of the susceptor 3 is further provided with a heating device 9, which can be an electric resistance heating device, or an electromagnetic induction heating device, or an RFC heating device, etc. without limitation. The heating device 9 is used to heat the satellite disk 31, the wafer 32, and the susceptor 3. In some embodiments, the reaction chamber 100 is further provided with a base (not shown), which is used to seal the reaction cavity 2 from below and to support the devices in the reaction cavity 2. The gas flow of the first gas inlet structure 4 is horizontally injected towards the satellite disk 31, and a gap is left between the susceptor 3 and the sidewall 21, which serves as an exhaust channel. The exhaust channel is in communication with an exhaust pump, and the exhaust pump is electrically connected to the controller 8. The exhaust pump can extract part of the reaction products and unreacted gas from the exhaust channel together with the reaction cavity 2.

[0099] It should be noted that the downward pressing refers to further moving downwardly deviating from the original movement track, that is, the movement track after the downward pressing is below the movement track before the downward pressing. The downward pressing is not limited to vertical downward pressing, but also includes downward pressing to the oblique downward direction. When the gas flow advances to the injection direction, it is also impacted by the gas flow vertically downward or obliquely downward, so that the gas flow blows to the satellite disk 31 in a parabolic shape and is scattered compared with the gas flow naturally falling in the horizontal injection direction, so that the gas flow field is more uniform. It should be noted that although the carrier gas of the second gas inlet structure 5 can press the reaction gas sprayed by the first gas inlet structure 4 downward, part of the reaction gas will flow through the gap of the carrier gas sprayed by the second gas inlet structure 5, that is, this part of the gas flow is not impacted by the downward gas flow, but is naturally deposited after reaction, or is directly extracted out of the reaction cavity 2 without reaction.

[0100] The epitaxial apparatus has a controller 8, which can be one of any form of general- purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. Support circuits are coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, and the like. One or more processes can be stored in the memory as software routines that can be executed or invoked to achieve the intended functionality. The software routines can also be stored and / or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU. The controller 8 can include one or more configurations that can include any commands or functions used to control the flow rate, gas valves, gas sources, rotation, movement, heating, cooling, or other processes that perform the various configurations, such as can control the movement, rotation, gripping, releasing, etc. operations of a robotic arm. The controller 8 can be coupled to various components of the multi-wafer planetary epitaxial apparatus to control the operation thereof, for example, the controller 8 can control the gas flow on / off, flow rate, flow, etc. in the first gas inlet structure 4 and the second gas inlet structure 5, in particular, the gas flow on / off, flow rate, flow, etc. of each gas inlet line 6 that is in communication with the first gas inlet passage of the first gas inlet structure 4. The gas flow on / off, flow rate, flow, etc. of each carrier gas output 52 of the second gas inlet structure 5 can also be controlled. It is noted that the multi-wafer planetary epitaxial apparatus includes a plurality of gas inlet lines 6, each first gas inlet passage and each carrier gas output 52 is in communication with a separate gas inlet line 6, the gas inlet line 6 is provided with a flow controller, the controller 8 is electrically connected with the flow controller to control the gas flow on / off, flow rate, flow, etc. of the gas inlet line 6, so that the gas inlet of each first gas inlet passage and each carrier gas output 52 can be controlled by controlling the gas inlet line 6. In some embodiments, the controller 8 includes a central processing unit (CPU), a memory, and support circuits, optionally, the controller 8 is a single-chip microcomputer.

[0101] Accordingly, the embodiment also provides a computer device, comprising a processor and a memory, the processor is adapted to implement instructions, and the memory is adapted to store a plurality of instructions, wherein the instructions are adapted to be loaded and executed by the processor to implement the gas inlet method of the epitaxial apparatus as described above.

[0102] Accordingly, the embodiment also provides a computer readable storage medium, the computer readable storage medium has computer executable instructions stored thereon, wherein when the computer executable instructions are executed, the gas inlet method of the epitaxial apparatus as described above can be implemented.

[0103] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of the changes or replacements within the technical range disclosed by the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A gas intake method for epitaxial equipment, characterized in that: The steps include: Obtaining film thickness values ​​of various regions on the upper surface of the wafer; determining a gas flow adjustment value of a carrier gas output element corresponding to each of the regions according to the obtained film thickness values ​​of the regions; The reaction gas with a preset gas flow rate is introduced into the reaction chamber through the first gas inlet structure, the first gas inlet structure extends into the reaction chamber from the center of the top of the reaction chamber and can output the reaction gas to the surrounding area, and the carrier gas is introduced into the reaction chamber through multiple carrier gas output parts that can independently intake gas through the second gas inlet structure, the carrier gas output parts are arranged around the first gas inlet structure and can output the carrier gas downward, wherein the gas flow rate output by each of the carrier gas output parts is determined by the preset gas flow rate after adjusting the gas flow rate according to the gas flow rate adjustment value, and the carrier gas ejected by the second gas inlet structure can absorb at least part of the reaction gas ejected by the first gas inlet structure. The gas is pressed down and blown toward the satellite dish for carrying the chip. The second air inlet structure includes a plurality of top air outlets opened on the bottom surface of the upper cover toward the reaction chamber and used for ejecting the carrier gas. The top air outlets are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base. Each carrier gas output element includes the top air outlets on one or more adjacent concentric circles. A radius of the chip surface is divided into a plurality of continuous line segments, and each line segment rotates around the center of the chip to form a plurality of adjacent non-overlapping concentric areas. Each of the areas corresponds to one or more carrier gas output elements.

2. The gas intake method of epitaxial equipment according to claim 1, characterized in that: The step of obtaining the film thickness values ​​of various areas on the upper surface of the wafer includes: S101: Detecting film thickness values ​​at locations to be measured distributed in various regions on the surface of the wafer, wherein the regions are adjacent, non-overlapping, concentric regions; S102: Obtaining the film thickness value of each region of the wafer according to the film thickness value of the position to be measured.

3. The gas intake method of epitaxial equipment according to claim 1, characterized in that: The step of determining the gas flow adjustment value of the carrier gas output element corresponding to each of the regions according to the obtained film thickness values ​​of the regions comprises: S201: determining a target value according to the film thickness value of each region or calling the pre-stored target value; S202: Calculating the film thickness value of each region of the wafer with the target value to obtain a comparison value of each region of the wafer; S203: matching the comparison value of each of the regions with the pre-stored preset comparison value of each of the regions and the preset comparison value in the correspondence relationship between the gas flow rate adjustment value of the carrier gas output component; S204: If the match is successful, the gas flow adjustment value of the carrier gas output component corresponding to the area is determined according to the comparison value of each area and the pre-stored correspondence between the preset comparison value of each area and the gas flow adjustment value of the carrier gas output component.

4. The gas intake method of epitaxial equipment according to claim 1, characterized in that: The step of obtaining the film thickness values ​​of each area on the upper surface of the wafer includes the following steps: The wafer is taken out of the reaction chamber and placed into a film thickness detection device.

5. The gas intake method of epitaxial equipment according to claim 1, characterized in that: The step of introducing a preset flow rate of reaction gas into the reaction chamber through the first gas inlet structure includes the following steps: The wafer is taken out from the film thickness detection device and placed into the reaction chamber.

6. An air intake system for an epitaxial device, wherein the air intake method according to any one of claims 1 to 5 is applied to the epitaxial device, characterized in that: include: A reaction chamber comprising a reaction chamber, a first air inlet structure, and a second air inlet structure, wherein the first air inlet structure extends from the center of the top of the reaction chamber into the reaction chamber and can output reaction gas to the surrounding area, and the second air inlet structure includes a plurality of carrier gas output elements that can independently intake gas, the carrier gas output elements being arranged around the first air inlet structure and capable of outputting carrier gas downward, and the carrier gas ejected from the second air inlet structure can press down at least a portion of the reaction gas ejected from the first air inlet structure; A film thickness detection device, used to obtain the film thickness value of each area on the upper surface of the wafer; A controller is used to determine the gas flow adjustment value of the carrier gas output component corresponding to each of the areas according to the obtained film thickness value of each of the areas; it is also used to control the air inlet pipeline to pass a preset gas flow rate of reaction gas into the reaction chamber through the first air inlet structure, and is also used to control the air inlet pipeline to pass the carrier gas into the reaction chamber through the multiple carrier gas output components of the second air inlet structure that can independently intake gas, wherein the gas flow rate output by each of the carrier gas output components is determined by adjusting the preset gas flow rate according to the gas flow adjustment value.

7. The air intake system of the epitaxial device according to claim 6, characterized in that: include: The reaction chamber includes an upper cover, a base, and multiple satellite disks. The upper cover is arranged at the top of the reaction chamber. The upper cover is provided with a first air intake structure and a second air intake structure. The first air intake structure extends into the reaction chamber along the rotation center axis of the base and can spray reaction gas to the surroundings. The second air intake structure is arranged around the first air intake structure and includes multiple carrier gas output parts that can independently intake air. The base is rotatably arranged in the reaction chamber and is arranged parallel to the upper cover at intervals. The multiple satellite disks are distributed in a circle on the base. The multiple satellite disks are used to carry chips. The base can rotate around the rotation center axis of the base with the satellite disks, and the satellite disks can also rotate around the rotation center axis of the satellite disks.

8. The air intake system of the epitaxial device according to claim 6, characterized in that: It also includes a robotic arm, which is arranged between the reaction chamber and the film thickness detection device, and is used to take the wafer out of the reaction chamber and place it into the film thickness detection device, and also to take the wafer out of the film thickness detection device and place it into the reaction chamber.

9. A readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the gas intake method for the epitaxial device according to any one of claims 1 to 5 is implemented.

10. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the gas intake method for the epitaxial device according to any one of claims 1 to 5 is implemented.

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