Coilless proton inductor, design method and control method

Abstract

The present invention discloses a wireless coil-type proton inductor with ultra-high inductance performance generated by the synergistic action of coaxial magnetoelectric coupling effect and spin transfer torque effect, as well as a design and regulation method. This inductor selects a suitable single crystal material with room-temperature coaxial magnetoelectric coupling characteristics and proton conductivity as the carrier, applies an alternating voltage along the crystal coaxial magnetoelectric coupling direction, uses the coaxial magnetoelectric coupling characteristics to regulate the simultaneous change of proton momentum and spin, realizes the "effective spin-orbit coupling" of protons, and then through the spin-orbit transfer torque, realizes the dynamic change of the local magnetic moment inside the structure driven by protons, generating a proton-type inductance function with ultra-high performance. The inductance value is as high as 10<supgt;3< / supgt; H on a micron-sized device, and the corresponding inductance density is as high as 10<supgt;5< / supgt> H / mm<supgt;2< / supgt>. This proton inductor has the advantages of low energy consumption, miniaturization, high inductance density, etc., and has great potential in the field of integrated circuits.

Description

Technical Field

[0001] The present invention belongs to the field of basic passive circuit element inductors, and in particular relates to a coil-free proton-type inductor with ultra-high inductance performance at room temperature, a design method and a control method. Background Art

[0002] As the most basic passive circuit element, inductors are widely used in integrated circuits. With the continuous improvement of the miniaturization of integrated circuits, inductor miniaturization has also become one of the key directions for the development of modern electronic technology, which is of great significance. Miniaturized inductors can significantly reduce the size and weight of electronic devices, making portable devices such as smartphones, wearable devices, medical electronics and IoT devices more compact and lightweight. It also improves the electrical performance of the device, such as higher operating frequency and lower energy loss, and enhances the performance and battery life of the device. At the same time, miniaturization helps to improve circuit integration and system integration, optimize circuit design, and improve manufacturing efficiency and production cost-effectiveness. In addition, miniaturized inductors are particularly prominent in high-frequency and high-speed applications, supporting advanced communication technologies such as 5G and Wi-Fi 6, as well as the realization of various high-frequency RF circuits. With the increasing complexity and diversification of electronic product functions, inductor miniaturization not only meets the requirements of smaller size and higher performance, but also promotes innovation and progress in the electronics industry, helping to achieve smarter and more efficient electronic systems. Therefore, inductor miniaturization has far-reaching significance for improving the overall performance of electronic equipment, achieving technological innovation, and promoting industry development.

[0003] The traditional inductors based on Faraday's law of electromagnetic induction that are widely used currently require a special coil-type device structure, which cannot take into account both performance and size. More importantly, it is difficult to further integrate with other basic circuit components. Therefore, research on new inductors based on mechanisms that are different from traditional inductance is particularly important.

[0004] Emergent inductance is a new inductance mechanism that originates from the dynamic changes of the Berry phase in the field of quantum mechanics. It can be divided into two types according to the excitation mode: translation and rotation of the spiral plane. In the translation mode, when current flows through a special spiral magnetic structure, the local magnetic moment in the structure exchanges angular momentum with the conduction electrons through exchange coupling, generating a series of spin transfer torques and spin driving potentials, thereby storing energy in the spiral magnetic structure. This is also called spiral magnetic emergent inductance. Here, the Berry connection generated by the spatial change of the local magnetic moment replaces the electromagnetic potential effect in the traditional inductor, thereby generating an emergent inductance. The rotation mode is similar to this, also known as spin-orbit emergent inductance. It gets rid of the dependence on special spiral magnetic structures and uses the spin-orbit coupling effect of conduction electrons to change the spin of the conduction electrons, thereby driving the rotation of the local magnetic moment to form a dynamic Berry phase. Therefore, the requirements for the magnetic structure are much broader. Although the emergence of emergent inductance has broken away from the structural limitations of the traditional Faraday's law of electromagnetic induction and provided a new direction for the miniaturization of inductors, the translational mode of helical magnetic emergent inductance is mainly negative inductance and has a low inductance value in experiments, which greatly limits the scope of practical applications (such as the inability to achieve the basic function of the inductor - filtering function). The spin-orbit emergent inductance has not only not been realized experimentally, but also, from the theoretically derived formula, the low effective mass of electrons is destined to have a low inductance value (only 10 -6 H level), it is difficult to meet the needs of high performance and miniaturization of inductors. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a coil-free proton-type inductor with ultra-high inductance performance at room temperature, a design method and a control method, which solves the problem in the prior art that high performance and miniaturization of inductors cannot coexist and are difficult to integrate into micro-integrated circuits.

[0006] The present invention adopts the following technical solutions to solve the above technical problems:

[0007] A coil-free proton inductor comprises an insulating substrate, a pair of electrodes arranged on the insulating substrate and spaced a certain distance apart along the same horizontal line, a single crystal sheet electrically connected to the pair of electrodes, and an AC voltage is applied between the electrodes at both ends; the single crystal sheet has room temperature coaxial magnetoelectric coupling characteristics and proton conductive properties.

[0008] A pair of electrodes is parallel to the direction in which the single crystal sheet has coaxial magnetoelectric coupling properties.

[0009] The electrode is a metal electrode with a certain thickness grown on a silicon oxide sheet covering a mask plate by magnetron sputtering.

[0010] The preparation method thereof comprises the following steps:

[0011] Step 1: growing a metal electrode pattern with a thickness of 10 nm as a bottom electrode on a silicon oxide wafer covered with a mask by magnetron sputtering;

[0012] Step 2, selecting a suitable single crystal sheet with room temperature coaxial magnetoelectric coupling characteristics and proton conductivity properties and transferring it to the surface of the polyvinyl alcohol film covering the surface of the polydimethylsiloxane film;

[0013] Step 3, non-destructively laminating the single crystal sheet on the surface of polyvinyl alcohol to the metal electrode, so that the direction in which a pair of electrodes and the single crystal sheet have coaxial magnetoelectric coupling properties is parallel;

[0014] Step 4: Apply a changing temperature to the single crystal slice, and utilize the different viscosities of the polydimethylsiloxane film and the polyvinyl alcohol film after heating to separate the polyvinyl alcohol film from the silicon wafer surface and carry the single crystal slice to further fit tightly with the metal electrode.

[0015] In step 4, a heating rate of 10°C / min was applied to the single crystal wafer, which was raised to 50°C and maintained for 5 minutes, and then cooled to room temperature at a cooling rate of 5°C / min.

[0016] In order to further solve the problem of weak intrinsic spin-orbit coupling effect of protons with high effective mass, the present invention also provides a design method and a control method of a coil-free proton-type inductor. The specific technical solution is as follows:

[0017] The design method of the coil-free proton type inductor includes the following steps:

[0018] Step a: According to the emergent inductance theory formula, it can be known that the inductance value is proportional to the effective mass of the carriers, and protons are selected as the driving force for the local magnetic moment movement inside the single crystal thin film structure;

[0019] Step b, according to the characteristic that the carrier spin-orbit coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton is ignored, and the coaxial magneto-electric coupling characteristics are used to change the coaxial effective magnetic field of the single crystal slice under the action of an external alternating electric field, so as to regulate the proton spin and realize the simultaneous change of the proton spin and momentum, thereby forming "effective spin-orbit coupling";

[0020] Step c, the spin of the proton changes during the movement, generating a self-selected transfer torque acting on the local magnetic moment, forming an equivalent perturbation magnetic field, driving the local magnetic moment to precess around the effective magnetic field direction of the single crystal thin slice itself, superimposing a nutation phenomenon;

[0021] In the absence of proton flow, the local magnetic moment only precesses around the effective magnetic field, and the angle between the local magnetic moment and the effective magnetic field remains unchanged;

[0022] When protons flow through the local magnetic moment, assuming that the spin transfer torque and the perturbation magnetic field Hg and the local magnetic moment m are perpendicular to each other;

[0023] Step d: Different moments with the same and The local magnetic moment of m is placed in the same Bloch sphere, and the motion trajectory of m forms a conical structure with a changing solid angle; it is concluded that the Berry connection a ± The time derivative can induce an electric field Under the action of the induced electric field, an electromotive force is induced, generating the required emergent inductance, where: is the angle between the local magnetic moment and the effective magnetic field, is the time rate of change of the angle between the local magnetic moment and the effective magnetic field, and e is the unit charge.

[0024] The theoretical formula of the emergent inductance is as follows:

[0025]

[0026] Where p is the spin polarization of the proton, m H is the effective mass of proton, l x is the length of the proton channel, A is the cross-sectional area of ​​the proton channel, G xz is the proton "effective spin-orbit coupling" strength factor, is the current density in the direction of proton flow, is the complex value of the dynamic magnetic susceptibility at the angular frequency ω = 2πf, and the subscripts x, y, and z represent the directions of the crystal axes a, b, and c.

[0027] The phenomenon in step c can be described by the LLG equation:

[0028]

[0029] Here γ and α represent the gyromagnetic ratio and Gilbert damping constant, respectively, and H eff is the effective magnetic field of the single crystal slice itself, H g represents the equivalent perturbative magnetic field originating from the self-selected transfer torque.

[0030] The proton-type emergent inductance is calculated by the following formula:

[0031]

[0032] Among them, l b is the proton channel length in the direction in which the single crystal sheet has coaxial magnetoelectric coupling properties, that is, the length of a unit cell in the crystal structure is the channel length, and K is the magnetocrystalline anisotropy constant.

[0033] The invention discloses a control method for a coil-free proton inductor, wherein the resonant frequency of the proton inductor is obtained, and an alternating voltage is applied between electrodes at both ends, wherein the frequency of the applied alternating voltage is lower than the resonant frequency.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] 1. The present invention provides a coil-free proton inductor with ultra-high inductance performance at room temperature. Compared with the traditional spiral coil inductor, the coil-free proton inductor has the advantage that the size is only at the micron level and has the potential for further miniaturization.

[0036] 2. Structurally, it only requires two-terminal electrodes in the plane to be connected to single crystal materials that meet the requirements. It is similar to the structure of other basic electronic components in integrated circuits and has good planar compatibility.

[0037] 3. Since protons have a high effective mass, the inductance generated by the local magnetic moment movement inside the drive structure is as high as 10 3 H, considering the device size is at the micron level, the corresponding inductance density is 10 5 H / mm 2 .

[0038] 4. Compared with traditional coil inductors, the size of coil-free proton inductors is reduced by 10% while maintaining the same inductance value. 10 times or more.

[0039] 5. Compared with traditional coil-type inductors with the same inductance value, coil-free proton-type inductors have extremely low energy consumption and require a driving voltage of only less than 1V. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 Schematic diagram of the structure of a traditional coil inductor.

[0041] Figure 2 It is a schematic structural diagram of a coil-free proton-type inductor with ultra-high inductance performance according to the present invention.

[0042] Figure 3 This is a test diagram of the frequency dependence of the complex impedance of the coil-free proton-type inductor of the present invention.

[0043] Figure 4 (a) is the frequency dependence test diagram of complex impedance at room temperature; (b) is the frequency dependence test diagram of complex impedance at a high temperature of 320K.

[0044] Figure 5 This is the Nyquist impedance spectrum test diagram of the present invention.

[0045] Figure 6 This is a proton activation energy test diagram of the present invention.

[0046] Figure 7 This is a comparison chart of the conductivity of the single crystal sample after isotope substitution of the present invention and the original sample.

[0047] Figure 8 (A) is the frequency dependence diagram of the inductance value under different alternating voltage conditions; (B) is the frequency dependence diagram of the imaginary part of the complex impedance under different alternating voltage conditions; (C) is the frequency dependence diagram of the phase angle under different alternating voltage conditions. DETAILED DESCRIPTION

[0048] The structure and working process of the present invention will be further described below in conjunction with the accompanying drawings.

[0049] The basic working principle of traditional coil inductors is based on Faraday's law of electromagnetic induction: when current passes through the inductor, it generates a magnetic field, and the changing magnetic field induces an electric potential in the inductor. Its main structure includes a conductor coil, a magnetic core material, and an external insulating material, such as Figure 1 As shown. Therefore, under the limitation of basic structure, it is very difficult to miniaturize inductors. In addition, the inductance performance of traditional coil inductors is closely related to the size and number of turns of the coil. With the assistance of advanced micro-nano processing technology, the size can be reduced to the micron level, but the inductance value associated with it is also significantly reduced to only nH level, and the corresponding inductance density is 10 -9 H / mm 2 , it is difficult to meet the demand for high inductance performance in miniaturized integrated circuits. In addition, the structure of the spiral coil also makes it difficult for traditional inductors to be integrated into miniaturized integrated circuits, hindering the further development of integrated circuits.

[0050] Emergent inductance is a new inductance mechanism that originates from the dynamic changes of the Berry phase in the field of quantum mechanics. The local magnetic moment in the structure exchanges angular momentum with the conduction electrons through exchange coupling, generating a series of spin transfer torques and spin driving potentials, thereby storing energy in the magnetic structure. Here, the Berry connection generated by the spatial change of the local magnetic moment replaces the electromagnetic potential effect in the traditional inductor, thereby generating inductance. Although the emergence of emergent inductance has broken away from the structural limitations of the traditional Faraday's law of electromagnetic induction and provided a new direction for the miniaturization of inductors, in experiments, it is mainly negative inductance and has a low inductance value (only 10 -6 H level), which greatly limits the scope of practical application and makes it difficult to meet the needs of high performance and miniaturization of inductors. Therefore, an inductor is designed to solve the above problems, specifically:

[0051] A coil-free proton inductor comprises an insulating substrate, a pair of electrodes arranged on the insulating substrate and spaced a certain distance apart along the same horizontal line, a single crystal sheet electrically connected to the pair of electrodes, and an AC voltage is applied between the electrodes at both ends; the single crystal sheet has room temperature coaxial magnetoelectric coupling characteristics and proton conductive properties.

[0052] The specific design method of the coil-free proton inductor is as follows:

[0053] According to the emergent inductance theory formula

[0054]

[0055] Where p is the spin polarization of the proton, m H is the effective mass of proton, l x is the length of the proton channel, A is the cross-sectional area of ​​the proton channel, G xz is the proton "effective spin-orbit coupling" strength factor, is the current density in the direction of proton flow, is the complex value of the dynamic magnetic susceptibility at angular frequency ω = 2πf, and the subscript xyz represents the direction of the crystal axis (abc). It can be seen that the inductance value L xy and the proton effective mass m H Therefore, in order to obtain high-performance inductance values, it is necessary to use carriers with high effective mass, such as protons, which are widely used in the field of neuro-like devices, to drive the movement of local magnetic moments inside the structure, which requires that the spin of the protons changes during the movement.

[0056] Considering that the coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton can be ignored, so it is necessary to find a new way to control the proton spin and achieve the simultaneous change of the proton's spin and momentum. According to the LLG equation, when a proton with a high effective mass moves in a changing magnetic field, its spin magnetic moment m H A change occurs, that is, the momentum and spin of the proton change at the same time, forming "effective spin-orbit coupling".

[0057] Since the proton spin changes during the motion, it interacts with the local magnetic moment m in the structure in different directions, that is, the self-selected transfer torque acts on m, causing m to move around H eff The nutation is superimposed on the precession process. This phenomenon can be described by the LLG equation:

[0058]

[0059] Here γ and α represent the gyromagnetic ratio and Gilbert damping constant, respectively, and H eff is the effective magnetic field of the single crystal slice itself, H grepresents the equivalent perturbative magnetic field originating from the self-selected transfer torque.

[0060] In the absence of proton flow, the local magnetic moment m only revolves around the effective magnetic field H eff Precession, m and H eff However, when protons flow through the local magnetic moment, the H originating from the spin transfer torque generated by the protons g The induced m superimposes the nutation on the basis of precession. Here, it is assumed that the spin transfer torque and the perturbation magnetic field H g and the local magnetic moment m are perpendicular to each other. Accordingly, m revolves around H eff During exercise (the angle between the local magnetic moment and the effective magnetic field) and (The time rate of change of the angle between the local magnetic moment and the effective magnetic field) changes with time t. To further clearly show the relationship between m and H eff The motion state of is the superposition of precession and nutation. We divide different moments t with the same and m is placed in the same Bloch sphere. It can be seen that the motion trajectory of m forms a conical structure with a changing solid angle. This motion behavior is similar to the Berry phase dynamics acting on electrons in the spin-orbit coupling emergent inductance mechanism. Similarly, we can deduce that the Berry contact a ± The time derivative can induce an electric field Under the action of the induced electric field, an electromotive force is induced, thereby generating emergent inductance. When the frequency of the alternating current is lower than the resonant frequency, the formula for the proton-type emergent inductance can be approximated as:

[0061]

[0062] Among them, l b is the length of the proton channel in the direction where the single crystal sheet has coaxial magnetoelectric coupling properties (here the length of a unit cell in the crystal structure is the channel length), A is the cross-sectional area of ​​the proton channel (here the cross-sectional area of ​​a unit cell in the crystal structure is the proton channel cross-sectional area), and K is the magnetocrystalline anisotropy constant. It can be seen that the inductance value is proportional to the square of the effective mass of the proton.

[0063] Specific embodiments, such as Figures 2 to 8 As shown,

[0064] Example 1: Preparation of a coil-free proton-type inductor.

[0065] Select suitable single crystal thin film materials with room temperature magnetoelectric coupling characteristics and proton conductivity properties, and prepare high-quality single crystal thin film samples according to the standard growth plan. Using electrostatic adsorption, select suitable single crystal thin films through a gold-plated fine needle for subsequent device preparation. A metal electrode pattern of 10 nm thick is grown on a silicon oxide wafer covered with a mask by magnetron sputtering as a bottom electrode. Then the selected single crystal is transferred to one side of the pre-prepared polyvinyl alcohol (PVA) film, and the other side of the polyvinyl alcohol film is attached to a polydimethylsiloxane (PDMS) film attached to a smooth glass slide. Then use a two-dimensional transfer platform to adjust the angle so that the electrode is parallel to the direction of the coaxial magnetoelectric coupling of the single crystal sample, and the single crystal sample is non-destructively attached to the metal electrode, and then heated to 50°C at a rate of 10°C / min and maintained for 5 minutes, and then cooled to room temperature at a rate of 5°C / min. Slowly lift the glass slide. At this time, due to the different viscosity caused by temperature change, the polyvinyl alcohol film and the single crystal thin film are separated from the polydimethylsiloxane film closely attached to the surface of the silicon oxide wafer, thereby completing the device preparation, such as Figure 2 shown.

[0066] Example 2: Frequency dependence test of complex impedance of a coil-free proton-type inductor.

[0067] Due to the coaxial magnetoelectric coupling of the single crystal, under the control of the external alternating electric field, the effective magnetic field H in the coaxial direction eff The magnitude changes periodically with the same frequency as the external alternating electric field. eff The periodic change of the proton spin magnetic moment m H During the motion of protons, periodic changes occur (similar to the spin-orbit effect of electrons). The spin magnetic moment m of the proton changes H There is an exchange coupling effect with the local magnetic moment m, which generates a spin transfer torque and thus affects m around H eff The movement (changing spiral motion) forms a changing magnetic field, which ultimately produces an inductor function. Figure 3 As shown in the figure, the probe station is connected to an LCR tester to conduct a preliminary complex impedance-frequency test of the coil-free proton-type inductor in the room temperature atmosphere. It can be seen that under the AC voltage V ac =0.7V, the complex impedance value shows a trend of first increasing and then decreasing with the AC frequency, which is consistent with the complex impedance-frequency table characteristics of the standard inductor, that is, it shows inductance characteristics before the resonance frequency and capacitance characteristics after the resonance frequency, which indicates that the device has a standard inductance function.

[0068] Example 3: Temperature-dependent frequency dependence test of complex impedance of a coil-free proton-type inductor.

[0069] From the selected material properties, it can be seen that its coaxial magnetoelectric coupling property disappears above 304K. ac= 0.7V, the frequency dependence of complex impedance was tested at room temperature and 320K. Figure 4 In (a), at room temperature, the single crystal sample exhibits the complex impedance-frequency relationship of a standard inductor, while at 320K, the magnetoelectric coupling property disappears (ferroelectricity disappears, ferromagnetism exists), and the single crystal sample exhibits the complex impedance-frequency relationship of a standard capacitor (such as Figure 4 (b) in Figure 1). It can be seen that the coaxial magnetoelectric coupling property is the key condition for the generation of proton-type emergent inductance.

[0070] Example 4 verifies that the carriers of the coil-free proton-type inductor are protons.

[0071] The Nyquist impedance spectroscopy test further verified that the conductive mechanism was proton conduction. Figure 5 As shown, different AC voltage V ac Under the conditions, the impedance spectrum shows a standard semicircular curve that conforms to proton conductivity. Unlike the conventional proton conductivity impedance spectrum, the imaginary part of the complex impedance is positive in the lower frequency range, which is due to the unique inductance characteristics of the sample. The single crystal sample was tested for proton conductivity at variable temperature using a comprehensive physical property measurement instrument (PPMS). The relationship between proton conductivity and temperature is shown in Figure 6 As shown, as the temperature decreases, the proton conductivity decreases. According to the Arrhenius formula, the proton activation energy E can be estimated. a About 0.044eV, indicating that the mechanism of proton conduction is the Grothes mechanism. Deuterium oxide was further used to replace water molecules in the raw material structure, and the voltammetric characteristics of the two were tested respectively. As expected, since deuterium atoms are heavier than hydrogen atoms and more difficult to separate from oxygen, the conductivity of the sample replaced by deuterium oxide will decrease significantly. Figure 7 As shown in the figure, the conductivity of the single crystal sample after deuterium oxide substitution decreases by about 4 orders of magnitude compared to the original single crystal sample. Combined with the Nyquist impedance spectroscopy experiment, it can be confirmed that the material is a proton-based conductive type.

[0072] Example 5: Inductance function test of a coil-free proton-type inductor.

[0073] According to the relationship between inductance and the imaginary part of complex impedance, the relationship between the inductance value and frequency of the prepared coil-free proton inductor can be obtained. Figure 8 As shown in (A), the inductor can have an inductance value of up to 10 3 H, resonant frequency ~40kHz. Considering the channel size of the device, the inductance density is ~10 5 H / mm 2, which is a huge improvement compared to the inductors widely used now, about 8 orders of magnitude or more. In addition, as the AC voltage increases further, the inductance value gradually decreases, which shows that the proton-type emergent inductance is inversely proportional to the AC voltage (i.e., the alternating current density). By comparing the complex impedance imaginary part-frequency and phase angle-frequency relationships, we can find that the frequency range in which the complex impedance imaginary part is positive is consistent with the frequency range in which the phase angle is positive, further confirming that the device has excellent intrinsic inductance function ( Figure 8 (B) and (C) in the figure).

[0074] Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. A person with ordinary knowledge in the technical field to which the present invention belongs may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the definition of the claims.

Claims

1. A coil-free proton inductor, characterized in that: According to the characteristic that the carrier spin-orbit coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton is ignored, and the coaxial magnetoelectric coupling characteristics are used to change the coaxial effective magnetic field of the single crystal slice under the action of an external alternating electric field, so as to regulate the proton spin and realize the simultaneous change of the proton spin and momentum, thus forming an effective spin-orbit coupling. The proton-type inductor comprises an insulating substrate, a pair of electrodes arranged on the insulating substrate and spaced at a certain distance along the same horizontal line, a single crystal sheet electrically connected to the pair of electrodes, and an AC voltage is applied between the electrodes at both ends; the single crystal sheet has room temperature coaxial magnetoelectric coupling characteristics and proton conductive properties; the pair of electrodes are parallel to the direction in which the single crystal sheet has coaxial magnetoelectric coupling properties; The inductance value generated by the local magnetic moment movement inside the proton inductor drive structure is as high as 10 3 H and above.

2. The coil-free proton inductor according to claim 1, characterized in that: The electrode is a metal electrode with a certain thickness grown on a silicon oxide sheet covering a mask plate by magnetron sputtering.

3. The coil-free proton inductor according to claim 1, characterized in that: The preparation method thereof comprises the following steps: Step 1: grow a metal electrode pattern of 10 nm thick as a bottom electrode on a silicon oxide wafer covered with a mask by magnetron sputtering; Step 2, selecting a single crystal sheet with room temperature coaxial magnetoelectric coupling characteristics and proton conductivity properties and transferring it to the surface of the polyvinyl alcohol film covering the surface of the polydimethylsiloxane film; Step 3, non-destructively laminating the single crystal sheet on the surface of polyvinyl alcohol to the metal electrode, so that the direction in which a pair of electrodes and the single crystal sheet have coaxial magnetoelectric coupling properties is parallel; Step 4: Apply a changing temperature to the single crystal slice, and utilize the different viscosities of the polydimethylsiloxane film and the polyvinyl alcohol film after heating to separate the polyvinyl alcohol film from the silicon wafer surface and carry the single crystal slice to further fit tightly with the metal electrode.

4. The coil-free proton inductor according to claim 3, characterized in that: In step 4, a heating rate of 10°C / min was applied to the single crystal wafer, which was raised to 50°C and maintained for 5 minutes, and then cooled to room temperature at a cooling rate of 5°C / min.

5. The design method of the coil-free proton-type inductor according to any one of claims 1 to 4, characterized in that: The steps include: Step a: According to the emergent inductance theory formula, it can be known that the inductance value is proportional to the effective mass of the carriers. Protons with high effective mass are selected as the driving force for the local magnetic moment movement inside the single crystal thin film structure to increase the inductance value; Step b, according to the characteristic that the carrier spin-orbit coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton is ignored, and the coaxial magnetoelectric coupling characteristics are used to change the coaxial effective magnetic field of the single crystal sheet under the action of an external alternating electric field, so as to regulate the proton spin, realize the simultaneous change of the proton spin and momentum, and form an effective spin-orbit coupling; Step c, the spin of the proton changes moment by moment during the movement, generating a spin transfer torque acting on the local magnetic moment, forming an equivalent perturbation magnetic field, driving the local magnetic moment to precess around the effective magnetic field direction of the single crystal thin slice itself, superimposing a nutation phenomenon; In the absence of proton flow, the local magnetic moment only precesses around the effective magnetic field, and the angle between the local magnetic moment and the effective magnetic field remains unchanged; When protons flow through the local magnetic moment, assuming that the spin transfer torque, the perturbation magnetic field and the local magnetic moment The three are perpendicular to each other; Step d: Different moments with the same and The local magnetic moment of is placed in the same Bloch sphere, The motion trajectory forms a conical structure with a changing solid angle; it is concluded that the Berry connection The time derivative can induce an electric field ; Under the action of the induced electric field, an electromotive force is induced, generating the required emergent inductance, among which, is the angle between the local magnetic moment and the effective magnetic field, is the time rate of change of the angle between the local magnetic moment and the effective magnetic field, is the unit charge.

6. The method for preparing the coil-free proton-type inductor according to claim 5, characterized in that: The theoretical formula of the emergent inductance is as follows: ， in, is the spin polarization of the proton, is the effective mass of the proton, is the length of the proton channel, A is the cross-sectional area of ​​the proton channel, is the effective proton spin-orbit coupling strength factor, is the current density in the direction of proton flow, At angular frequency The complex value of the dynamic magnetic susceptibility, subscript Represents the crystal axis direction.

7. The method for preparing the coil-free proton-type inductor according to claim 5, characterized in that: The phenomenon in step c can be described by the LLG equation: ， here and denote the gyromagnetic ratio and the Gilbert damping constant, respectively. is the effective magnetic field of the single crystal slice itself, represents the equivalent perturbative magnetic field originating from the spin transfer torque.

8. The method for preparing a coil-free proton-type inductor according to claim 5, characterized in that: The proton-type emergent inductance is calculated by the following formula: ， in, is the proton channel length in the direction where the single crystal sheet has coaxial magnetoelectric coupling properties, and K is the magnetocrystalline anisotropy constant.

9. The control method of the coil-free proton inductor according to any one of claims 1 to 4, characterized in that: The resonant frequency of the proton-type inductor is obtained, and an AC voltage is applied between the electrodes at both ends, wherein the frequency of the applied AC voltage is lower than the resonant frequency.

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