Semiconductor process apparatus and method of controlling the same

Abstract

The application discloses a semiconductor process equipment and a control method thereof. The disclosed semiconductor process equipment comprises a chamber, a wafer support, a spectral intensity detection device and a cooling pipeline. The wafer support is arranged in the chamber. A transparent window is arranged on the top wall of the chamber opposite to the wafer support. The spectral intensity detection device is located outside the chamber and opposite to the transparent window. The cooling pipeline is arranged on the wafer support and used for blowing cooling gas to the wafer on the wafer support. The spectral intensity detection device comprises a light emitting device and a light receiving device. The light emitting device is used for emitting light with a first spectral intensity to the wafer. The light receiving device is used for receiving light with a second spectral intensity obtained after the light with the first spectral intensity is reflected by the surface of the wafer. The cooling pipeline is used for adjusting the parameter of blowing the cooling gas to the wafer when the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, so as to reduce the temperature of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment, and in particular to a semiconductor process equipment and a control method thereof. Background Art

[0002] In semiconductor process equipment, plasma-related equipment (such as plasma etcher, plasma enhanced chemical vapor deposition equipment, physical vapor deposition equipment, etc.) has important applications in integrated circuits (ICs), micro-electromechanical systems (MEMS) and advanced packaging. The corresponding etching processes and coating processes are very important processes in industrial production. In these processes, the control of wafer temperature is an important process indicator. If the temperature of the wafer is too high, it is easy to cause the wafer to become sticky during the process, resulting in the wafer not meeting the process requirements. In related technologies, in order to detect whether an abnormality occurs to the wafer during the process, usually after the wafer process is completed, the wafer-related characteristics are analyzed to determine whether an abnormality occurs to the wafer during the process. However, this judgment method cannot detect the process defects of the wafer in time during the process of the wafer, resulting in the generation of waste wafers. Summary of the Invention

[0003] The present invention discloses a semiconductor process equipment and a control method thereof, so as to solve the problem in the related art that the semiconductor process equipment cannot timely detect process defects of wafers during the process of wafers, resulting in the generation of waste wafers.

[0004] In order to solve the above-mentioned technical problems, the present invention is achieved as follows:

[0005] In a first aspect, the present application discloses a semiconductor process apparatus comprising a chamber, a wafer support, a spectral intensity detection device, and a cooling circuit, wherein the wafer support is disposed within the chamber, a transparent window is provided on a top wall of the chamber opposite the wafer support, the spectral intensity detection device is located outside the chamber and opposite the transparent window, the cooling circuit is disposed within the wafer support and is configured to blow cooling gas toward a wafer on the wafer support, and the spectral intensity detection device comprises a light emitting device and a light receiving device;

[0006] The light emitting device is used to emit light of a first spectral intensity toward the wafer, the light receiving device is used to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer, and the cooling pipeline is used to adjust the parameters of the cooling gas blown toward the wafer to reduce the temperature of the wafer when the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold.

[0007] In a second aspect, the present application further discloses a control method for semiconductor process equipment. The disclosed semiconductor process equipment is the semiconductor process equipment described in the first aspect. The disclosed control method includes:

[0008] Controlling the light emitting device to emit light of a first spectral intensity toward the wafer on the wafer supporting seat;

[0009] Controlling the light receiving device to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer;

[0010] detecting whether a difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold;

[0011] When the difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold, the parameters of the cooling gas blown to the wafer by the cooling pipeline are adjusted to reduce the temperature of the wafer.

[0012] The technical solution adopted by the present invention can achieve the following technical effects:

[0013] The semiconductor process equipment disclosed in the embodiment of the present application is provided with a spectral intensity detection device, and the spectral intensity detection device is provided with a structure including a light emitting device and a light receiving device, so that when the semiconductor process equipment processes the wafer, the light emitting device emits light of a first spectral intensity to the wafer, and the light receiving device receives light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer. Therefore, when the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold value, it can be determined that the surface of the wafer has caused phenomena such as sticking due to the high temperature. Therefore, during the process of the semiconductor process equipment processing the wafer, the parameters of the cooling pipe blowing cooling gas to the wafer can be adjusted in time to reduce the temperature of the wafer, thereby avoiding process defects such as sticking on the surface of the wafer, thereby solving the problem in the related art that the semiconductor process equipment cannot detect the process defects of the wafer in time during the process of the wafer, resulting in the generation of waste wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic structural diagram of a first semiconductor process equipment disclosed in an embodiment of the present invention;

[0015] Figure 2 A schematic structural diagram of a second semiconductor process equipment disclosed in an embodiment of the present invention;

[0016] Figure 3 A diagram showing the positional relationship between the first spectral intensity detection device and the wafer support base;

[0017] Figure 4 is a positional relationship diagram of the second spectrum intensity detection device and the wafer support base;

[0018] Figure 5 is a positional relationship diagram of the third spectrum intensity detection device and the wafer support base;

[0019] Figure 6 is a positional relationship diagram of the fourth spectrum intensity detection device and the wafer support base;

[0020] Figure 7 This is a flow chart of a first method for controlling semiconductor process equipment disclosed in an embodiment of the present invention;

[0021] Figure 8 This is a flow chart of a second method for controlling semiconductor process equipment disclosed in an embodiment of the present invention.

[0022] Description of reference numerals:

[0023] 100-chamber, 110-transparent window, 120-main cylindrical member, 130-extension cylindrical member,

[0024] 200-wafer holder,

[0025] 300 - spectral intensity detection device, 310 - light emitting device, 320 - light receiving device. DETAILED DESCRIPTION

[0026] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0027] The technical solutions disclosed in various embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0028] Please refer to Figures 1 to 8 An embodiment of the present invention discloses a semiconductor process equipment. The disclosed semiconductor process equipment may be a plasma etcher, a plasma enhanced chemical vapor deposition equipment, a physical vapor deposition equipment, etc. This application does not impose any specific restrictions on the type of semiconductor process equipment.

[0029] The semiconductor process equipment disclosed in the embodiment of the present application includes a chamber 100, a wafer support 200, a spectrum intensity detection device 300 and a cooling pipeline.

[0030] The chamber 100 can provide a mounting base for some components of semiconductor processing equipment. A wafer support 200 is disposed within the chamber 100. The wafer support 200 can be disposed on the bottom wall of the chamber 100 and can be used to support wafers. A transparent window 110 is provided on the top wall of the chamber 100, opposite the wafer support 200. The top wall of the chamber 100 is opposite the bottom wall of the chamber 100.

[0031] The spectral intensity detecting device 300 is located outside the chamber 100 and opposite the transparent window 110. A cooling pipeline is provided on the wafer carrier 200 and used to blow cooling gas to the wafer on the wafer carrier 200.

[0032] It should be noted that the semiconductor processing equipment needs to control the temperature of the wafer during some processes of the wafer to prevent the temperature of the wafer from being too high. The semiconductor processing equipment can control the temperature of the wafer by controlling the temperature of the wafer carrier 200. Since there is still a gap between the wafer carrier 200 and the wafer in the state of being attached, the semiconductor processing equipment blows cooling gas to the wafer on the wafer carrier 200 through the cooling pipeline to cool the wafer. The cooling pipeline can be provided in the wafer carrier 200, and the gas outlet of the cooling pipeline can be exposed to the surface of the wafer carrier 200 for carrying the wafer, so that the cooling gas can be blown between the wafer and the wafer carrier 200 when the wafer is placed on the wafer carrier 200. Of course, the cooling pipeline can also be provided outside the wafer carrier 200, and the cooling pipeline can blow cooling gas to the side of the wafer away from the wafer carrier 200 when the wafer is placed on the wafer carrier 200. The embodiment of the present application does not limit the way the cooling pipeline blows cooling gas to the wafer.

[0033] The spectral intensity detecting device 300 includes a light emitting device 310 and a light receiving device 320. The light emitting device 310 is used to emit light of a first spectral intensity to the wafer, and the light receiving device 320 is used to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer. It should be noted that the light of the first spectral intensity emitted by the light emitting device 310 to the wafer on the wafer carrier 200 can pass through the transparent window 110 to reach the wafer on the wafer carrier 200. The light of the second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer can pass through the transparent window 110 to reach the light receiving device 320. The light of the second spectral intensity is the light obtained after the light of the first spectral intensity is reflected by the wafer. The light of the first spectral intensity can be incident perpendicularly to the wafer, of course, the light of the first spectral intensity can also be incident at a certain inclination angle relative to the wafer.

[0034] It should be further explained that when the wafer temperature is too high, the surface roughness of the wafer increases, i.e., the "stickiness" phenomenon occurs. In other words, there is a certain correspondence between the wafer temperature and the wafer surface roughness, and this correspondence can be obtained experimentally. When the wafer surface roughness is large, light of the first spectral intensity undergoes significant diffuse reflection upon reaching the wafer surface, resulting in a weaker intensity of light of the second spectral intensity received by the light receiving device 320. When the wafer surface roughness is small, the diffuse reflection of light of the first spectral intensity upon reaching the wafer surface is also relatively small, resulting in a stronger intensity of light of the second spectral intensity received by the light receiving device 320. Therefore, when the intensity of the light of the first spectral intensity emitted by the light emitting device 310 is constant, the intensity of the light of the second spectral intensity received by the light receiving device 320 has a certain correspondence with the roughness of the wafer surface. This correspondence can be obtained experimentally, and thus, a correspondence between the intensity of the light of the second spectral intensity received by the light receiving device 320 and the wafer temperature can be obtained.

[0035] The cooling pipeline is used to adjust the parameters of the cooling gas blown to the wafer to reduce the temperature of the wafer when the difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold.

[0036] It should be noted that, based on the correspondence between the intensity of the light of the second spectral intensity received by the light receiving device 320 and the wafer temperature, when the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, it can be determined that the temperature of the wafer is too high, resulting in a large roughness on the wafer surface or a "glue sticking" phenomenon. The preset threshold can be set artificially or obtained through experiments. The embodiment of the present application does not impose any specific restrictions on the value of the preset threshold.

[0037] The cooling gas disclosed in the embodiment of the present application may be helium. Of course, the cooling gas may also be other inert gases. The present application does not limit the type of cooling gas.

[0038] The parameters of the cooling gas can be the temperature, flow rate, pressure, etc. of the cooling gas. This application does not limit the specific types of the cooling gas parameters. Adjusting the parameters of the cooling gas can achieve temperature regulation of the wafer. The correspondence between the parameters of the cooling gas and the temperature of the wafer can be obtained through experiments.

[0039] During the process of semiconductor process equipment processing a wafer, the wafer is placed on the wafer support 200, the light emitting device 310 emits light of a first spectral intensity to the wafer, and the light receiving device 320 receives light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer. When the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, the cooling pipeline adjusts the parameters of the cooling gas blown to the wafer to reduce the temperature of the wafer.

[0040] The semiconductor process equipment disclosed in the embodiment of the present application is provided with a spectral intensity detection device 300, and the spectral intensity detection device 300 is provided as a structure including a light emitting device 310 and a light receiving device 320, so that when the semiconductor process equipment processes the wafer, the light emitting device 310 emits light of a first spectral intensity to the wafer, and the light receiving device 320 receives light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer. When the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, it can be determined that the surface of the wafer has a phenomenon such as sticking due to a high temperature. Therefore, during the process of the semiconductor process equipment processing the wafer, the parameters of the cooling gas blown to the wafer by the cooling pipeline can be adjusted in time to reduce the temperature of the wafer, thereby avoiding process defects such as sticking on the surface of the wafer. This can solve the problem in the related art that the semiconductor process equipment cannot timely detect the process defects of the wafer during the process of the wafer, resulting in the generation of waste wafers.

[0041] In an optional embodiment, there may be multiple cooling pipes, which may include a central cooling pipe and an edge cooling pipe. The central cooling pipe can be used to blow cooling gas to the center area of ​​the wafer, and the edge cooling pipe can be used to blow cooling gas to the edge area of ​​the wafer.

[0042] It should be noted that the edge area of ​​the wafer surrounds the central area of ​​the wafer.

[0043] The semiconductor process equipment disclosed in the embodiment of the present application is configured with multiple cooling pipes, and the multiple cooling pipes are configured into a structure including a central cooling pipe and an edge cooling pipe, so that the central cooling pipe can blow cooling gas to the central area of ​​the wafer, and the edge cooling pipe can blow cooling gas to the edge area of ​​the wafer, thereby enabling independent adjustment of each, which is beneficial to improving the flexibility of adjustment.

[0044] During wafer processing by semiconductor processing equipment, the temperature of the wafer may be too high in only the center area or only the edge area, or in both the center and edge areas. In order to more accurately adjust the temperature of the wafer, there may be multiple spectral intensity detection devices 300, and the multiple spectral intensity detection devices 300 may include a central spectral intensity detection device and an edge spectral intensity detection device. In other words, a part of the multiple spectral intensity detection devices 300 serves as the central spectral intensity detection device, and another part of the multiple spectral intensity detection devices 300 serves as the edge spectral intensity detection device. The central spectral intensity detection device and the edge spectral intensity detection device both include a light emitting device 310 and a corresponding light receiving device 320.

[0045] The central spectral intensity detection device can be used to transmit light of a first sub-spectral intensity toward the central region of the wafer via the light emitting device 310, and receive light of a second sub-spectral intensity obtained after reflection from the surface of the central region via the light receiving device 320. When the difference between the first and second sub-spectral intensities detected by the central spectral intensity detection device is greater than a first preset threshold, the parameters of the central cooling pipe blowing cooling gas toward the central region of the wafer can be adjusted to cool the central region of the wafer. The first preset threshold can be set manually or obtained through experimentation, and the embodiments of the present application do not limit the specific value of the first preset threshold.

[0046] The edge spectrum intensity detection device can be used to transmit light of a third sub-spectral intensity toward the edge region of the wafer via the light emitting device 310, and receive light of a fourth sub-spectral intensity obtained after surface reflection from the edge region via the light receiving device 320. When the difference between the third and fourth sub-spectral intensities detected by the edge spectrum intensity detection device is greater than a second preset threshold, the parameters of the cooling gas blown by the edge cooling pipe toward the edge region of the wafer can be adjusted to cool the edge region of the wafer. The second preset threshold can be set manually or obtained through experimentation, and the embodiments of the present application do not limit the specific value of the second preset threshold.

[0047] It should be noted that in the process of semiconductor process equipment processing wafers, different processes have different tolerances for the roughness of the wafers. In some embodiments, when the tolerances for the center area of ​​the wafer and the edge area of ​​the wafer are of the same standard, the first preset threshold and the second preset threshold may be the same; of course, in some embodiments, when different standards are used for the tolerances for the center area of ​​the wafer and the edge area of ​​the wafer, the first preset threshold and the second preset threshold may be different.

[0048] It should also be noted that, in some cases, the spectrum of the light emitted by the central spectrum intensity detection device through the light emitting device 310 and the spectrum of the light emitted by the edge spectrum intensity detection device through the light emitting device 310 can be the same (i.e., the same light is used). For example, when the tolerance of the central area of ​​the wafer and the edge area of ​​the wafer are at the same standard, the light emitting device 310 of the central spectrum intensity detection device and the light emitting device 310 of the edge spectrum intensity detection device can emit light of the same spectrum. Of course, this embodiment is not limited to the application scenario where the tolerance of the central area of ​​the wafer and the edge area of ​​the wafer are at the same standard. For other scenarios, this embodiment will not be repeated. Among them, the first sub-spectral intensity and the third sub-spectral intensity can be the same or different, and can be set according to the actual application.

[0049] Of course, in other cases, the spectrum lines of the light emitted by the central spectrum intensity detection device through the light emitting device 310 and the light emitted by the edge spectrum intensity detection device through the light emitting device 310 can be different (that is, different light lines are used). For example, when different standards are adopted for the tolerance of the central area of ​​the wafer and the edge area of ​​the wafer, the light emitting device 310 of the central spectrum intensity detection device and the light emitting device 310 of the edge spectrum intensity detection device can emit light with different spectrum lines. At this time, the first preset threshold value and the second preset threshold value can be the same or different, and can be set specifically according to the actual application. Of course, this embodiment is not limited to the application scenario of adopting different standards for the tolerance of the central area of ​​the wafer and the edge area of ​​the wafer. For other scenarios, this embodiment will not be repeated. Among them, the first sub-spectral intensity and the third sub-spectral intensity can be the same or different, and can be set specifically according to the actual application.

[0050] It should be noted that the central spectral intensity detection device, the edge spectral intensity detection device, the central cooling pipeline and the edge cooling pipeline can all be connected to the control module. The control module can control the parameters of the cooling gas blown by the central cooling pipeline and the edge cooling pipeline based on the difference between the first spectral intensity and the second spectral intensity detected by the central spectral intensity detection device and the edge spectral intensity detection device respectively.

[0051] The semiconductor process equipment disclosed in the embodiment of the present application is configured with multiple spectral intensity detection devices 300, and the multiple spectral intensity detection devices 300 are configured to include a central spectral intensity detection device and an edge spectral intensity detection device, so that the central cooling pipe can adjust the parameters of the cooling gas blown to the central area of ​​the wafer according to the difference between the first sub-spectral intensity and the second sub-spectral intensity detected by the central spectral intensity detection device, and the edge cooling pipe can adjust the parameters of the cooling gas blown to the edge area of ​​the wafer according to the difference between the third sub-spectral intensity and the fourth sub-spectral intensity detected by the edge spectral intensity detection device, thereby achieving independent adjustment of the cooling gas blown by the central cooling pipe and the edge cooling pipe, thereby achieving precise adjustment of the local area of ​​the wafer, and thus more accurately adjusting the temperature of the wafer.

[0052] In one embodiment, reference Figure 3 , the edge spectrum intensity detection device can be one. In other embodiments, please refer to 4 to Figure 6 There can be multiple edge spectrum intensity detection devices, and the multiple edge spectrum intensity detection devices can detect different positions of the wafer edge. There can also be multiple edge cooling pipes, and the multiple edge cooling pipes correspond one-to-one to the multiple edge spectrum intensity detection devices. The multiple edge cooling pipes can detect the difference between the third sub-spectrum intensity and the fourth sub-spectrum intensity according to the corresponding edge spectrum intensity detection devices, so that the parameters of the blown cooling gas can be independently adjusted, and ultimately precise adjustment of the wafer edge area can be achieved.

[0053] In some embodiments, spectral intensity detection device 300 can also be used to detect the endpoint of a wafer process performed by semiconductor processing equipment, that is, to detect when the semiconductor processing equipment has stopped processing the wafer. Specifically, the light of a first spectral intensity emitted by the light emitting device of spectral intensity detection device 300 and the light of a second spectral intensity received by the light receiving device have an optical path difference. Regardless of the surface topography of the wafer, this difference in surface height will directly translate into a phase shift difference at the corresponding pixel points, thereby deriving a film thickness value. When the wafer thickness reaches a predetermined thickness, the semiconductor processing equipment can stop processing the wafer.

[0054] Of course, in other embodiments, the semiconductor process equipment may be provided with an endpoint detection device that is different from the spectral intensity detection device 300. The endpoint detection device may detect the process endpoint of the semiconductor process equipment on the wafer. The endpoint detection device may be detected by methods such as laser interferometry end point (IEP) or optical emission spectrum (OES).

[0055] For an optional embodiment, please refer to Figure 1 The chamber 100 may include a main cylindrical member 120 and an extension cylindrical member 130. The extension cylindrical member 130 may be connected to the main cylindrical member 120, or the extension cylindrical member 130 may be an integral structure with the main cylindrical member 120. The extension cylindrical member 130 may be in communication with the main cylindrical member 120. The end of the extension cylindrical member 130 facing away from the main cylindrical member 120 may be provided with a transparent window 110. The transparent window 110 on the extension cylindrical member 130 may be opposite to the center spectrum intensity detection device. The main cylindrical member 120 may form a shoulder at the connection with the extension cylindrical member 130. The shoulder may also be provided with a transparent window 110. The transparent window 110 on the main cylindrical member 120 may be opposite to the edge spectrum intensity detection device.

[0056] Please refer to Figure 2 The chamber 100 may not be provided with the extending cylindrical member 130. The top of the chamber 100 may be a planar structure. The top of the chamber 100 may be provided with a plurality of transparent windows 110, which may be respectively provided corresponding to the central spectrum intensity detection device and the edge spectrum intensity detection device.

[0057] The chamber 100 can be made of ceramic material. Of course, the chamber 100 can also be made of other materials. The embodiment of the present application does not limit the material of the chamber 100. In another embodiment, the chamber wall of the chamber 100 where the transparent window 110 is provided can be made of an aluminum cover plate, so as to facilitate the opening of the transparent window 110.

[0058] Please refer to Figure 7 Based on the semiconductor process equipment disclosed in the above embodiment, the present application further discloses a control method for semiconductor process equipment. The disclosed semiconductor process equipment is the semiconductor process equipment disclosed in the above embodiment. The disclosed control method includes:

[0059] S101 , controlling the light emitting device 310 to emit light of a first spectral intensity toward the wafer on the wafer supporting base 200 .

[0060] S102 , controlling the light receiving device 320 to receive light with a second spectral intensity obtained after the light with the first spectral intensity is reflected by the surface of the wafer.

[0061] S103: Detect whether the difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold.

[0062] S104 , when the difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold, adjusting the parameters of the cooling pipe blowing cooling gas to the wafer to reduce the temperature of the wafer.

[0063] It should be noted that the steps in the control method of the semiconductor process equipment disclosed in the embodiments of the present application have the same or similar functions as the steps in the semiconductor process equipment disclosed in the above embodiments, and can be mutually referred to, which will not be repeated here.

[0064] The control method of the semiconductor process equipment disclosed in the embodiments of the present application controls the light emitting device 310 to emit light of the first spectral intensity to the wafer on the wafer carrier 200, controls the light receiving device 320 to receive the light of the second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer, so that when the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, the parameters of the cooling pipeline blowing the cooling gas to the wafer are adjusted to reduce the temperature of the wafer, thereby avoiding the process defects such as paste of the wafer, thereby solving the problem that the semiconductor process equipment in the related art cannot timely find the process defects of the wafer in the process of the wafer to cause the waste wafer.

[0065] Further, please refer to Figure 8 , in order to avoid the difference between the detected first spectral intensity and the second spectral intensity, optionally, the control light receiving device 320 receives the light of the second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer, comprising:

[0066] S201, every first preset time length, control the light receiving device 320 to receive the light of the second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer.

[0067] After detecting whether the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, and when the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, the control method further comprises:

[0068] S202, if the difference between the detected first spectral intensity and the second spectral intensity is greater than the preset threshold, the abnormal number is increased by 1.

[0069] S203, if the difference between the detected first spectral intensity and the second spectral intensity is less than or equal to the preset threshold, the abnormal number is cleared.

[0070] When the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, the parameters of the cooling pipeline blowing the cooling gas to the wafer are adjusted, comprising:

[0071] S204, when the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, and the abnormal number is equal to the preset allowed number, the parameters of the cooling pipeline blowing the cooling gas to the wafer are adjusted.

[0072] It should be noted that the preset allowed number of times is greater than 1, for example, the preset allowed number of times is 5.

[0073] The control method of the semiconductor process equipment disclosed in the embodiment of the present application is to increase the number of abnormalities by 1 when the difference between the detected first spectral intensity and the second spectral intensity is greater than a preset threshold, and reset the number of abnormalities to zero when the difference between the detected first spectral intensity and the second spectral intensity is less than or equal to the preset threshold, so that when the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold and the number of abnormalities is equal to the preset allowed number, the parameters of the cooling pipeline for blowing cooling gas to the wafer are adjusted, so that the parameters of the cooling pipeline for blowing cooling gas to the wafer are adjusted only when the number of consecutive abnormalities reaches the preset allowed number, thereby avoiding erroneous detection of the difference between the first spectral intensity and the second spectral intensity.

[0074] In an optional embodiment, after controlling the light receiving device 320 to receive light of a second spectral intensity obtained after light of a first spectral intensity is reflected by the surface of the wafer at every first preset time duration, and before detecting whether the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, the control method disclosed in the embodiment of the present application further includes:

[0075] Step A1: Calculate the total duration accumulated from all the first preset durations that have passed.

[0076] Step A2: When the total time is less than the preset process time, executing the step of detecting whether the difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold.

[0077] The control method of the semiconductor process equipment disclosed in the embodiment of the present application calculates the total accumulated time of all the first preset time lengths that have passed, so that when it is detected that the first preset time length is greater than or equal to the accumulated total time length, it can be determined that the process is finished, so that it can be judged in a timely and accurate manner whether the process is finished. When it is detected that the total time length is less than the preset process time length, it can be determined that the process is not finished, so that it can continue to detect whether the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold.

[0078] To improve the accuracy of detecting the difference between the first spectral intensity and the second spectral intensity, the disclosed control method may optionally further include:

[0079] Step B1, determining the spectral intensity of the selected spectral line in the chamber 100, and using the spectral intensity of the selected spectral line as a reference spectral intensity.

[0080] It should be noted that the selection of spectral lines should avoid the spectral intensity required by the background when the semiconductor process equipment processes the wafer. For example, when the wafer requires fluorine-containing gas for etching, the wavelengths of 390nm, 703nm and 777nm need to be avoided to avoid mutual interference.

[0081] Controlling the light emitting device 310 to emit light of a first spectral intensity toward the wafer on the wafer supporting base 200 includes:

[0082] Step B2, controlling the emitting device 310 to emit light of a first spectral intensity toward the wafer on the wafer supporting base 200, wherein the spectrum line of the light of the first spectral intensity is consistent with the selected spectrum line, and the first spectral intensity is an integer multiple of the reference spectral intensity.

[0083] It should be noted that the first spectral intensity can be twice the reference spectral intensity. Of course, the first spectral intensity can also be 3 times, 5 times, etc. of the reference spectral intensity. The embodiment of the present application does not limit the multiple of the first spectral intensity relative to the reference spectral intensity.

[0084] The control method of the semiconductor process equipment disclosed in the embodiment of the present application can enhance the signal of the detected spectral intensity and improve the accuracy of detecting the difference between the first spectral intensity and the second spectral intensity by setting the spectral line of the light of the first spectral intensity to the same spectral line as the selected spectral line, and setting the first spectral intensity to an integer multiple of the reference spectral intensity.

[0085] Optionally, before controlling the light emitting device 310 to emit light of the first spectral intensity toward the wafer on the wafer supporting base 200 , the disclosed control method further includes:

[0086] Step C1: inputting a spectral intensity change threshold.

[0087] The spectral intensity change threshold can be set accordingly according to different process adjustments. The embodiment of the present application does not limit the size of the spectral intensity change threshold.

[0088] Step C2: Calculate a preset threshold, wherein the preset threshold=spectral intensity change threshold×first spectrum intensity.

[0089] The control method of the semiconductor process equipment disclosed in the embodiment of the present application inputs a spectral intensity change threshold before controlling the light emitting device 310 to emit light of a first spectral intensity to the wafer on the wafer carrier 200, so that the preset threshold can be calculated through the relationship of preset threshold = spectral intensity change threshold × first spectral intensity.

[0090] In an optional embodiment, when there are multiple spectral intensity detection devices 300, and the multiple spectral intensity detection devices 300 include a central spectral intensity detection device and an edge spectral intensity detection device, controlling the light emitting device 310 to emit light of the first spectral intensity toward the wafer on the wafer supporting base 200 may include:

[0091] In step D1 , the light emitting device 310 of the central spectrum intensity detection device is controlled to emit light of a first sub-spectrum intensity toward the central area of ​​the wafer, and the light emitting device 310 of the edge spectrum intensity detection device is controlled to emit light of a third sub-spectrum intensity toward the edge area of ​​the wafer.

[0092] Controlling the light receiving device 320 to receive the light of the second spectral intensity emitted by the light emitting device 310 and reflected by the surface of the wafer may include:

[0093] In step D2, the light receiving device 320 of the central spectrum intensity detection device is controlled to receive the light of the second sub-spectral intensity obtained after being reflected from the surface of the central area by the light emitting device 310, and the light receiving device 320 of the edge spectrum intensity detection device is controlled to receive the light of the fourth sub-spectral intensity obtained after being reflected from the surface of the edge area by the light emitting device 310.

[0094] The control method of the semiconductor process equipment disclosed in the embodiment of the present application detects the central area and edge area of ​​the wafer respectively through the central spectrum intensity detection device and the edge spectrum intensity detection device, thereby making the detection of the wafer spectrum intensity more accurate.

[0095] Furthermore, when the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, adjusting the parameters of the cooling pipe blowing cooling gas to the wafer includes:

[0096] Step E1, when the difference between the first sub-spectral intensity and the second sub-spectral intensity detected by the central spectrum intensity detection device is greater than the first preset threshold, adjust the parameters of the central cooling pipe for blowing cooling gas to the central area of ​​the wafer; when the difference between the third sub-spectral intensity and the fourth sub-spectral intensity detected by the edge spectrum intensity detection device is greater than the second preset threshold, adjust the parameters of the edge cooling pipe for blowing cooling gas to the edge area of ​​the wafer.

[0097] The control method of the semiconductor process equipment disclosed in the embodiment of the present application adjusts the parameters of the central cooling pipe for blowing cooling gas to the central area of ​​the wafer when the difference between the first sub-spectral intensity and the second sub-spectral intensity detected by the central spectral intensity detection device is greater than the first preset threshold value; and adjusts the parameters of the edge cooling pipe for blowing cooling gas to the edge area of ​​the wafer when the difference between the third sub-spectral intensity and the fourth sub-spectral intensity detected by the edge spectral intensity detection device is greater than the second preset threshold value, thereby achieving independent adjustment of the cooling gas blown by the central cooling pipe and the edge cooling pipe, thereby achieving precise adjustment of the local area of ​​the wafer, and thus more accurately adjusting the temperature of the wafer.

[0098] To facilitate adjustment of cooling line parameters each time, optionally, the parameters of the cooling gas blown from the cooling line to the wafer are adjusted to lower the temperature of the wafer, including:

[0099] In step F1 , the parameters of the cooling gas blown from the cooling pipe to the wafer are adjusted at a preset ratio each time to reduce the temperature of the wafer.

[0100] It should be noted that when the control method for semiconductor process equipment requires input of a spectral intensity change threshold, the preset ratio can be the same as the spectral intensity change threshold. For example, if the spectral intensity change threshold is 10%, the preset ratio can also be 10%. For example, if the pressure of the cooling gas delivered by the cooling pipeline is 8 Torr and the preset ratio is 10%, the pressure of the cooling gas delivered by the cooling pipeline can be increased or decreased by 0.8 Torr each time.

[0101] The control method of the semiconductor process equipment disclosed in the embodiment of the present application adjusts the parameters of the cooling pipeline for blowing cooling gas to the wafer at a preset ratio each time, thereby facilitating the adjustment of the cooling pipeline parameters each time, and each adjustment of the parameters is relatively stable.

[0102] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0103] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are protected by the present invention.

Claims

1. A semiconductor process equipment, characterized in that: The invention comprises a chamber (100), a wafer supporting seat (200), a spectrum intensity detection device (300) and a cooling pipeline, wherein the wafer supporting seat (200) is arranged in the chamber (100), a transparent window (110) is provided on the top wall of the chamber (100) opposite to the wafer supporting seat (200), the spectrum intensity detection device (300) is located outside the chamber (100) and opposite to the transparent window (110), the cooling pipeline is arranged on the wafer supporting seat (200) and is used to blow cooling gas to the wafer on the wafer supporting seat (200), and the spectrum intensity detection device (300) comprises a light emitting device (310) and a light receiving device (320); The light emitting device (310) is used to emit light of a first spectral intensity toward the wafer, the light receiving device (320) is used to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer, and the cooling pipeline is used to adjust the parameters of the cooling gas blown toward the wafer when the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold value, so as to reduce the temperature of the wafer.

2. The semiconductor process equipment according to claim 1, wherein: There are multiple cooling pipes, including a central cooling pipe and an edge cooling pipe. The central cooling pipe is used to blow the cooling gas to the central area of ​​the wafer, and the edge cooling pipe is used to blow the cooling gas to the edge area of ​​the wafer.

3. The semiconductor process equipment according to claim 2, wherein: There are a plurality of spectrum intensity detection devices (300), and the plurality of spectrum intensity detection devices (300) include a central spectrum intensity detection device and an edge spectrum intensity detection device; The central spectrum intensity detection device is used to emit light of a first sub-spectral intensity to the central area of ​​the wafer through the light emitting device (310), and receive light of a second sub-spectral intensity obtained after being reflected by the surface of the central area through the light receiving device (320), and when the difference between the first sub-spectral intensity and the second sub-spectral intensity detected by the central spectrum intensity detection device is greater than a first preset threshold, adjust the parameters of the central cooling pipeline for blowing the cooling gas to the central area of ​​the wafer; The edge spectrum intensity detection device is used to emit light of a third sub-spectral intensity to the edge area of ​​the wafer through the light emitting device (310), and receive light of a fourth sub-spectral intensity obtained after being reflected from the surface of the edge area through the light receiving device (320). When the difference between the third sub-spectral intensity and the fourth sub-spectral intensity detected by the edge spectrum intensity detection device is greater than a second preset threshold, the parameters of the edge cooling pipeline for blowing the cooling gas to the edge area of ​​the wafer are adjusted.

4. A control method for semiconductor process equipment, characterized in that: The semiconductor process equipment is the semiconductor process equipment according to any one of claims 1 to 3, and the control method includes: controlling the light emitting device (310) to emit light of a first spectral intensity toward the wafer on the wafer supporting seat (200); controlling the light receiving device (320) to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer; detecting whether a difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold; When the difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold, the parameters of the cooling gas blown to the wafer by the cooling pipeline are adjusted to reduce the temperature of the wafer.

5. The control method according to claim 4, characterized in that: The controlling the light receiving device (320) to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer comprises: controlling the light receiving device (320) to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer at intervals of a first preset time; After detecting whether the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, and before adjusting the parameters of the cooling gas blown by the cooling pipeline to the wafer when the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, the control method further includes: If the difference between the first spectrum intensity and the second spectrum intensity detected is greater than the preset threshold, the number of abnormalities is increased by 1; if the difference between the first spectrum intensity and the second spectrum intensity detected is less than or equal to the preset threshold, the number of abnormalities is reset to zero; When the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, the parameters of the cooling pipe for blowing the cooling gas to the wafer are adjusted, including: when the difference between the first spectral intensity and the second spectral intensity is greater than the preset threshold, and the number of abnormalities is equal to the preset allowed number, the parameters of the cooling pipe for blowing the cooling gas to the wafer are adjusted.

6. The control method according to claim 5, characterized in that: After controlling the light receiving device (320) to receive light of a second spectral intensity obtained after the light of the first spectral intensity is reflected by the surface of the wafer at intervals of the first preset time, and before detecting whether the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, the control method further comprises: Calculate the total duration accumulated by all the first preset durations; When the total time is less than a preset process time, a step of detecting whether a difference between the first spectrum intensity and the second spectrum intensity is greater than a preset threshold is performed.

7. The control method according to claim 4, characterized in that: Before controlling the light emitting device (310) to emit light of a first spectral intensity toward the wafer on the wafer supporting seat (200), the control method further comprises: Determining the spectral intensity of a selected spectral line in the chamber (100), and using the spectral intensity of the selected spectral line as a reference spectral intensity; The controlling the light emitting device (310) to emit light of a first spectral intensity toward the wafer on the wafer supporting seat (200) comprises: The emitting device (310) is controlled to emit light of a first spectral intensity toward the wafer on the wafer support seat (200), wherein the spectrum line of the light of the first spectral intensity is consistent with the selected spectrum line, and the first spectral intensity is an integer multiple of the reference spectral intensity.

8. The control method according to claim 4, characterized in that: Before controlling the light emitting device (310) to emit light of a first spectral intensity toward the wafer on the wafer supporting seat (200), the control method further comprises: Enter the spectral intensity change threshold; The preset threshold is calculated, wherein the preset threshold=the spectrum intensity change threshold×the first spectrum intensity.

9. The control method according to claim 4, characterized in that: The semiconductor process equipment is the semiconductor process equipment according to claim 3, The controlling the light emitting device (310) to emit light of a first spectral intensity toward the wafer on the wafer supporting seat (200) comprises: controlling the light emitting device (310) of the central spectral intensity detection device to emit light of a first sub-spectral intensity toward the central region of the wafer, and controlling the light emitting device (310) of the edge spectral intensity detection device to emit light of a third sub-spectral intensity toward the edge region of the wafer; The controlling of the light receiving device (320) to receive the light of the second spectral intensity obtained after being reflected by the surface of the wafer and emitted by the light emitting device (310) comprises: controlling the light receiving device (320) of the central spectral intensity detection device to receive the light of the second sub-spectral intensity obtained after being reflected by the surface of the central area and emitted by the light emitting device (310), and controlling the light receiving device (320) of the edge spectral intensity detection device to receive the light of the fourth sub-spectral intensity obtained after being reflected by the surface of the edge area and emitted by the light emitting device (310).

10. The control method according to claim 9, characterized in that: When the difference between the first spectral intensity and the second spectral intensity is greater than a preset threshold, the parameters of the cooling gas blown by the cooling pipe to the wafer are adjusted, including: when the difference between the first sub-spectral intensity and the second sub-spectral intensity detected by the central spectral intensity detection device is greater than a first preset threshold, the parameters of the cooling gas blown by the central cooling pipe to the central area of ​​the wafer are adjusted; when the difference between the third sub-spectral intensity and the fourth sub-spectral intensity detected by the edge spectral intensity detection device is greater than a second preset threshold, the parameters of the cooling gas blown by the edge cooling pipe to the edge area of ​​the wafer.

11. The control method according to claim 4, characterized in that: Adjusting the parameters of the cooling gas blown by the cooling pipeline to the wafer to reduce the temperature of the wafer includes: The parameters of the cooling gas blown toward the wafer by the cooling pipeline are adjusted at a preset ratio each time to reduce the temperature of the wafer.

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