A method for monitoring the operating status of a resistor array infrared scene generating device

Abstract

The present invention relates to the field of electrical measurement technology, and in particular to a method for monitoring the operating state of a resistor array infrared scene generating device, the method comprising: obtaining current data and temperature data of a resistor element of the resistor array infrared scene generating device; determining the abnormality of the resistor element based on the current data and the temperature data; determining the changing trend of the temperature difference of the resistor element in a neighborhood based on the temperature data; determining the degree of fault manifestation of the resistor element based on the abnormality and the changing trend of the temperature difference; and monitoring the operating state of the resistor array infrared scene generating device based on the fault manifestation degree. By monitoring the changing trend of the temperature difference, the method can timely discover the fault of the resistor element and prevent the fault from further spreading, thereby improving the accuracy of monitoring the operating state of the resistor array infrared scene generating device.

Description

Technical Field

[0001] The invention relates to the technical field of electrical measurement, and in particular to a method for monitoring the operating state of a resistor array infrared scene generating device in the technical field of electrical measurement. Background Art

[0002] The resistor array infrared scene generation device is a device used to acquire and present thermal infrared images. By precisely controlling the current flowing through the resistor element, the temperature of each resistor element can be adjusted, thereby controlling the intensity of the infrared radiation it emits. Each resistor element in the resistor array can independently simulate pixels with different temperatures and radiation characteristics to form a high-resolution infrared image. In order to ensure that the device continuously and stably generates high-quality infrared images, it is necessary to collect and analyze key data of the resistor array in real time to evaluate the operating status of the device.

[0003] Usually, when evaluating the operating status of a resistor array infrared scene generation device, it is necessary to observe the abnormal state of the generated infrared scene image or monitor whether the working parameters deviate from the normal range. However, the abnormal state obtained by this monitoring method is a serious failure of the device, and the generated image is blurred, distorted or missing; if the resistor element is aged or damaged, affecting normal operation, the key parameters of the resistor are still within the normal range, but the generated infrared image has errors and the accuracy is reduced. Moreover, when a resistor element fails, the surrounding resistor elements will be affected, resulting in low accuracy in monitoring the operating status of the resistor array infrared scene generation device. Summary of the invention

[0004] In order to solve the technical problem of low monitoring accuracy of the operating state of the resistor array infrared scene generation device in the prior art, the purpose of the present invention is to provide a method for monitoring the operating state of the resistor array infrared scene generation device, and the technical solution adopted is as follows:

[0005] In a first aspect, an embodiment of the present invention provides a method for monitoring the operating status of a resistor array infrared scene generating device, the method comprising:

[0006] Acquiring current data and temperature data of the resistor elements of the resistor array infrared scene generating device;

[0007] determining a degree of abnormality of the resistance element based on the current data and the temperature data;

[0008] Based on the temperature data, determining a change trend of the temperature difference of the resistance element in a neighborhood;

[0009] Determining a fault manifestation degree of the resistance element based on the abnormality and the change trend of the temperature difference;

[0010] Based on the degree of the fault manifestation, the operating state of the resistor array infrared scene generating device is monitored.

[0011] In a second aspect, a device for monitoring the operating status of a resistor array infrared scene generating device is provided, the device comprising:

[0012] An acquisition module, used for acquiring current data and temperature data of the resistance elements of the resistance array infrared scene generating device;

[0013] A first determination module, configured to determine the abnormality of the resistance element based on the current data and the temperature data;

[0014] A second determination module, configured to determine a change trend of a temperature difference of the resistance element within a neighborhood based on the temperature data;

[0015] A third determination module, configured to determine a fault manifestation degree of the resistance element based on a change trend of the abnormality and the temperature difference;

[0016] A monitoring module is used to monitor the operating state of the resistor array infrared scene generating device based on the degree of the fault manifestation.

[0017] According to a third aspect, a computer program product is provided, comprising: a computer program code, which, when executed on a computer, enables the computer to execute the method according to the first aspect or any possible implementation of the first aspect.

[0018] In a fourth aspect, a computer-readable storage medium is provided, which stores a computer program code. When the computer program code runs on a computer, the computer executes the method in the above-mentioned first aspect or any possible implementation manner of the first aspect.

[0019] The present invention has the following beneficial effects: after obtaining the current data and temperature data of the resistor element of the resistor array infrared scene generating device, the abnormality of the resistor element is calculated through the current data and the temperature data, so that by monitoring the change trend of the monitored temperature difference of the resistor element, the abnormality of the resistor element can be timely and accurately obtained. Afterwards, based on the temperature data, the change trend of the temperature difference of the resistor element in the neighborhood is determined, so that through the temperature data obtained in real time, the change trend of the temperature difference of the resistor element in the neighborhood can be accurately analyzed, so that it is convenient to determine the degree of fault manifestation of the resistor element through the abnormality and the change trend of the temperature difference, and monitor the operating state of the resistor array infrared scene generating device based on the fault manifestation degree. In this way, by monitoring the change trend of the temperature difference, the fault of the resistor element can be discovered in time to prevent the fault from spreading further, thereby improving the accuracy of monitoring the operating state of the resistor array infrared scene generating device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is a schematic diagram of the implementation flow of a method for monitoring the operating status of a resistor array infrared scene generating device provided by an embodiment of the present invention;

[0022] Figure 2 It is another implementation flow diagram of a method for monitoring the operating status of a resistor array infrared scene generating device provided by an embodiment of the present invention;

[0023] Figure 3 It is another implementation flow diagram of a method for monitoring the operating status of a resistor array infrared scene generating device provided by an embodiment of the present invention;

[0024] Figure 4 It is another implementation flow diagram of a method for monitoring the operating status of a resistor array infrared scene generating device provided by an embodiment of the present invention;

[0025] Figure 5 It is a structural schematic diagram of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0026] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the following is a detailed description of the operation status monitoring method of a resistor array infrared scene generation device proposed by the present invention, its specific implementation method, structure, characteristics and effects, in conjunction with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0027] Among them, in the description of the embodiments of the present invention, unless otherwise specified, " / " means or, for example, A / B can mean A or B: "and / or" in the text is only a way to describe the association relationship of associated objects, indicating that there can be three relationships, for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the description of the embodiments of the present invention, "multiple" refers to two or more than two.

[0028] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as suggesting or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features.

[0029] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0030] The following is a detailed description of a method for monitoring the operating status of a resistor array infrared scene generating device provided by the present invention in conjunction with the accompanying drawings. Figure 1 , which shows a flow chart of a method for monitoring the operating status of a resistor array infrared scene generating device provided by an embodiment of the present invention, the method comprising:

[0031] 101, collecting current data and temperature data of the resistor elements of the resistor array infrared scene generating device, and performing preprocessing.

[0032] 102, obtaining a corresponding relationship between temperature data and current data of each resistor element.

[0033] 103, by changing the corresponding relationship, the abnormality of each resistance element is obtained.

[0034] 104, obtaining the variation trend of the temperature difference in the neighborhood of each resistor element.

[0035] 105, obtaining the degree of fault manifestation of the resistance element.

[0036] 106. Based on the degree of the fault manifestation, monitor the operating status of the resistor array infrared scene generating device.

[0037] In the embodiment of the present invention, when a certain resistor element in the resistor array infrared scene generating device fails, the current of the entire system will be redistributed to the surrounding resistor elements. This redistribution changes the temperature corresponding to the surrounding resistor elements. By monitoring the change trend of the temperature difference, the resistance abnormality can be obtained, the failure of the resistor element can be discovered in time, and the further spread of the failure can be prevented. At the same time, through accurate fault monitoring and positioning, the maintenance cost can be reduced, unnecessary inspection and replacement can be avoided, the occurrence rate of system failures can be reduced, and the reliability of the entire resistor array infrared scene generating device can be improved.

[0038] The embodiment of the present invention provides a method for monitoring the operating status of a resistor array infrared scene generating device. Figure 2 The steps shown achieve:

[0039] 201, obtaining current data and temperature data of resistor elements of a resistor array infrared scene generating device.

[0040] Here, the current data of each resistor element is obtained by acquiring the input current allocated to each resistor element by the resistor array infrared scene generating device. The temperature data of each resistor element of the resistor array infrared scene generating device during operation is determined by acquiring the thermal distribution image corresponding to the resistor array infrared scene generating device; and based on the thermal distribution image, the temperature data of each resistor element of the resistor array infrared scene generating device during operation is determined. Here, after obtaining the thermal distribution image, the temperature data of each resistor element of the generating device during the entire operation is recorded. In this way, by acquiring the current allocated to each resistor element by the resistor array infrared scene generating device in real time, and recording the temperature data of each resistor element in real time, it is convenient to perform fault monitoring through the temperature data and current data in the subsequent process.

[0041] In some possible implementations, the resistor array infrared scene generating device controls the intensity of infrared radiation emitted by the resistor element by precisely controlling the magnitude of the current flowing through the resistor element. That is, when current flows through these resistor elements, they are heated due to the thermal effect of the current, and the temperature of each resistor element can be adjusted to control the intensity of infrared radiation emitted by them. The magnitude of the current allocated to each resistor element by the generating device is recorded, or the input current of each resistor element is measured using a precision current sensor. At the same time, a bracket is used to fix the position of the resistor array, a thermal imaging camera is aimed at the resistor array, and the thermal imaging camera is used to scan the resistor array to obtain a thermal distribution image of the entire resistor array, so as to record the temperature data of each resistor element during the entire operation of the generating device. The current data and temperature data of each resistor element obtained are subjected to noise reduction filtering and normalization, so as to obtain the final temperature data and current data.

[0042] 202 , determining the abnormality of the resistance element based on the current data and the temperature data.

[0043] Here, by analyzing the corresponding relationship between current data and temperature data, the abnormality of each resistor element is calculated. In the resistor array infrared scene generation device, the corresponding relationship between the temperature and current of each resistor element is first obtained, which helps to establish a benchmark for comparison and monitoring during the operation of the system. When the corresponding relationship of the resistor element changes, it means that there is some abnormality, which may be caused by aging, damage or other potential problems of the resistor element. By monitoring the corresponding relationship between the temperature and current of each resistor element, these changes can be discovered in time, and the abnormality of each resistor element can be calculated accordingly, indicating the degree to which the resistor element deviates from the normal state, which helps maintenance personnel to quickly locate the problem and repair it. At the same time, the temperature difference change trend in the neighborhood of each resistor element is observed. Once a resistor element fails, its current may be redistributed to the surrounding resistor elements, resulting in a change in temperature, affecting the accuracy of the neighboring resistor elements, and then obtaining the degree of fault performance of each resistor element, realizing detailed monitoring of the resistor array infrared scene generation device, improving the overall efficiency and reliability of the system, and reducing the cost of fault maintenance.

[0044] In some possible implementations, the above step 202 can be performed by Figure 3 The steps shown achieve:

[0045] 301 : Determine a corresponding relationship between the current data and the temperature data.

[0046] Here, the resistor array infrared scene generation device adjusts the temperature of each resistor element by precisely controlling the current of each resistor element, thereby controlling the infrared radiation intensity emitted by it, simulating various infrared radiation patterns, and generating infrared images. In order to monitor the operating status of the resistor array infrared scene generation device, it is necessary to monitor the key parameters of the device. However, when some resistor elements of the resistor array have problems such as failure or aging, infrared images can still be generated, and the parameters are still within the normal range, but the accuracy of the infrared image has been reduced and cannot be used normally. The working principle of the device is to adjust the temperature of the resistor element through current. If there is a problem with the resistor element, when the resistor element passes current, it may not generate the expected temperature, and the normal corresponding relationship between current and temperature changes and deviates. Therefore, the corresponding relationship between the temperature and current of the resistor element is first obtained to judge the possibility of abnormal operation of the resistor element.

[0047] The corresponding relationship between the current data and temperature data of the resistor element is shown in formula (1):

[0048] (1);

[0049] Among them, exp() represents the exponential function with the natural constant e as the base. represents the corresponding relationship between the current data and the temperature data of the i-th resistor element; Indicates the number of resistor elements in the resistor array; Indicates Current data of each resistor element; Indicates Temperature data of each resistor element; Indicates The Pearson correlation coefficient of the current data and temperature data of a resistor element indicates the correlation between these two types of data. The larger the value, the stronger the correlation between the current data and the temperature, and the greater the corresponding relationship between the input current and the temperature data of the resistor element. Indicates The dynamic time warping (DTW) matching distance between the current data and temperature data of the resistor element reflects the similarity metric. The smaller it is, the smaller the DTW distance between the two types of data sets is, which means that the change similarity between the two types of data sets is greater, and the corresponding relationship between the current data and the temperature data of the resistor element is stronger; It represents the average correspondence between the current data and the temperature data of all the resistor elements in the resistor array. The correspondence obtained in this way is representative, avoiding the interference of individual errors, and represents the general level of the correspondence between the current data and the temperature data of each resistor element.

[0050] 302. Determine the abnormality of the resistor element based on the corresponding relationship.

[0051] Here, for any resistor element, the abnormality of the resistor element is calculated by combining the correspondence of the resistor element and the average correspondence of multiple resistor elements. In this way, by analyzing the correspondence between the current data and the temperature data of each resistor element, the abnormality of the resistor element can be accurately calculated.

[0052] In some possible implementations, the above step 302 may be implemented by the following steps 321 and 322 (not shown):

[0053] 321 , based on the correspondence between the current data and the temperature data of each resistor element, determine an average correspondence.

[0054] Here, by summing the corresponding relationship between the current data and the temperature data of multiple resistor elements and then calculating the average, the average corresponding relationship is obtained, which can be expressed as , Indicates The corresponding relationship between the current data and temperature data of each resistor element, represents the average corresponding relationship, Indicates the number of resistor elements in a resistor array.

[0055] 322, based on the correspondence between the current data and the temperature data of any resistance element and the average correspondence, determine the abnormality of any resistance element.

[0056] Here, when a certain resistor element fails, although the current flowing through the resistor element can be controlled, its temperature response does not meet expectations, resulting in a change in the correspondence between the actual temperature and the set current. When the correspondence between the temperature and current of a certain resistor element deviates from the average correspondence between the current data and the temperature data of the resistor element, the greater the difference, indicating that the possibility of abnormal operation of the resistor element is greater and its abnormality is greater.

[0057] The abnormality of each resistor element is shown in formula (2):

[0058] (2);

[0059] in, Indicates The abnormality of each resistor element; Indicates The corresponding relationship between the current data and the temperature data of each resistance element; Indicates the average correspondence between the current data and the temperature data of the resistor element. Indicates The difference between the correspondence between the current data and the temperature data of each resistor element and the average correspondence between the current data and the temperature data of the resistor element. The larger the formula, the greater the abnormality of the resistor element. In this way, by combining the correspondence between each resistor element and the average correspondence, the abnormality of each resistor element can be accurately calculated.

[0060] 203. Determine a change trend of the temperature difference of the resistor element in a neighborhood based on the temperature data.

[0061] Here, by analyzing the temperature difference between the actual temperature and the expected temperature in the neighborhood of the resistor element, the variation trend of the temperature difference in the neighborhood of the resistor element is calculated.

[0062] In some possible implementations, the above step 203 can be performed by Figure 4 The steps shown achieve:

[0063] 401 : Determine a neighborhood of the resistor element based on each pixel point in the infrared image corresponding to the resistor element.

[0064] Here, when a resistor element fails, the current that should have flowed through the resistor element will be redistributed to the surrounding resistor elements according to the physical characteristics of the circuit. This redistribution increases the temperature difference between the expected temperature and the actual temperature of the surrounding resistor elements, because the additional current causes the temperature of these resistor elements to rise, thereby changing their infrared radiation intensity. By monitoring the trend of temperature difference changes, the degree of resistance fault manifestation can be inferred, which helps to timely discover the spread of the fault and take corresponding measures. When a resistor element fails, the greater the difference between its actual temperature and the expected temperature, and it has a certain impact on the surrounding resistor elements, which also increases the difference between the actual temperature and the expected temperature of the surrounding resistor elements. The actual and expected temperature difference change trend is characterized by the maximum central fault resistor element decreasing synchronously with the surrounding resistor elements. The greater the degree of compliance with this temperature difference change trend, the more likely the resistor element is to fail.

[0065] Each resistor element in the resistor array of the resistor array infrared scene generating device corresponds to each pixel point in the infrared image, the eight neighborhoods of the resistor element are equivalent to the eight neighborhoods of the pixel point, and the neighborhood radius of each resistor element in the eight neighborhood directions is set to 3 to form the neighborhood of the resistor element.

[0066] 402 , in the neighborhood, determine a temperature difference between an expected temperature and temperature data of a resistance element.

[0067] Here, the temperature difference between the expected temperature and the temperature data of the resistance element is as shown in formula (3):

[0068] (3);

[0069] in, Indicates The temperature difference between the expected temperature and the actual temperature of a resistor element; Indicates The expected temperature of each resistor element is the expected temperature response value of the resistor array infrared scene generating device, which is given by the regulating system of the resistor array infrared scene generating device; Indicates The temperature data actually monitored by the resistor element.

[0070] 403 : Based on the temperature difference, determine a change trend of the temperature difference of the resistance element in a neighborhood.

[0071] Here, the average temperature difference is calculated by the temperature differences corresponding to the multiple resistor elements, and the change trend of the temperature difference of each resistor element in the neighborhood is further calculated by the average temperature difference. In this way, by analyzing the neighborhood where each pixel point is located and calculating the temperature difference between the expected temperature and the temperature data of the resistor element, the change trend of the temperature difference of the resistor element in the neighborhood can be accurately analyzed.

[0072] In some possible implementations, the above step 403 may be implemented by the following steps 431 and 432 (not shown):

[0073] 431. For any resistor element, based on the temperature difference, determine the consistency of the rate of change of the temperature difference between a plurality of candidate resistor elements in the neighborhood of the resistor element and the resistor element.

[0074] Here, the degree of consistency of the rate of change of the temperature difference between a plurality of candidate resistor elements in the neighborhood of any resistor element and any resistor element is as shown in formula (4):

[0075] (4);

[0076] Where exp{} represents an exponential function with the natural constant e as the base. Indicates Resistor element All the resistance elements in the eight neighborhoods under the radius are compared with the The greater the value, the more consistent the temperature difference change rate of the resistor elements. The more synchronous the temperature difference changes of the resistor elements in the eight-neighborhood direction, the When a resistor element fails, the resistor elements in the neighborhood are affected more synchronously; Represents the first The number of all resistor elements in the eight-neighborhood under the radius; Indicates The temperature difference between the expected temperature and the actual temperature of the resistor element, and Not 0; Indicates Resistor element In the eight neighborhoods under the radius The temperature difference between the expected temperature and the actual temperature of a resistor element; Indicates Resistor element The average temperature difference between the expected temperature and the actual temperature of all resistor elements in the eight neighborhoods under a radius. Indicates that from The resistor element is In the eight neighborhoods under the radius The rate of change of the temperature difference between the expected temperature and the actual temperature in the direction of a resistive element. Indicates The resistor element is In the eight neighborhoods under the radius The rate of change of the temperature difference between the expected temperature and the actual temperature in the direction of the first resistor element, and the Resistor element The difference between the average temperature difference between the expected temperature and the actual temperature of all resistor elements in the eight neighborhoods under a radius. Indicates The resistor element is The degree of consistency of the rate of change of the temperature difference between the expected temperature and the actual temperature in the direction of all the resistance elements in the eight neighborhoods under the radius; The larger the temperature difference is, the The more consistent the change of a resistor element toward the surrounding resistor elements.

[0077] It should be noted that the eight neighborhoods of the i-th resistor element under the r-th radius can be regarded as a neighborhood range composed of the resistor elements in the eight directions corresponding to the eight neighborhoods of the i-th resistor element within a circular range with the i-th resistor element as the center and r as the radius.

[0078] 432. Determine a change trend of the temperature difference of any resistor element in the neighborhood based on the consistency of the change rate and the temperature difference.

[0079] Here, by multiplying the change rate consistency and the temperature difference, and combining the multiplication result and the corresponding relationship between the input current and the temperature data of the resistor element, the change trend of the temperature difference of any resistor element in the neighborhood is calculated. In this way, for any resistor element, by analyzing the change rate consistency of the temperature difference between multiple candidate resistor elements in the neighborhood and the resistor element, the change trend of the temperature difference of the resistor element in the neighborhood can be accurately calculated.

[0080] In some possible implementations, the above step 432 may be implemented by the following process:

[0081] First, based on the temperature differences corresponding to multiple candidate resistor elements in the neighborhood, the average temperature difference is determined. Secondly, the difference between the average temperature difference and the temperature difference corresponding to any resistor element is determined. Finally, based on the difference and the consistency of the change rate, the change trend of the temperature difference of any resistor element in the neighborhood is determined. In this way, for any resistor element, by calculating the difference between the average temperature difference and the temperature difference corresponding to the resistor element, and combining the difference with the consistency of the change rate of the temperature difference, the change trend of the temperature difference of the resistor element in the neighborhood can be accurately analyzed.

[0082] In some possible implementations, the variation trend of the temperature difference in the neighborhood of each resistor element is as shown in formula (5):

[0083] (5);

[0084] in, Indicates The variation trend of temperature difference in the neighborhood of each resistor element; Indicates the average correspondence between the current data and the temperature data of the resistor element. represents the average temperature difference, Indicates Resistor element All the resistance elements in the eight neighborhoods under the radius are compared with the The degree of consistency of the rate of change of the temperature difference of the resistor elements. Indicates The temperature difference between the first resistor and the Resistor element The larger the difference in the average temperature difference of all resistor elements in the eight neighborhoods under a radius (that is, the difference between the average temperature difference and the temperature difference corresponding to any resistor element), the smaller the temperature difference of the resistor element is toward the neighborhood. Indicates The change trend of the temperature difference of each resistor element in the neighborhood range is as follows: when the difference in temperature difference is greater and the synchronization of the change rate of the resistor elements in the neighborhood is higher, the possibility of failure is higher.

[0085] 204 : Determine the degree of fault manifestation of the resistance element based on the change trend of the abnormality and the temperature difference.

[0086] Here, the degree of fault performance of the resistor element is obtained by combining the change trend of the abnormality and the temperature difference. The change trend of the actual and expected temperature difference in the neighborhood of the resistor element reflects the influence of the faulty resistor element on the neighboring resistor elements. When the change trend of the temperature difference of the resistor element is more consistent with the operating state at the time of the fault, and the greater the deviation between the corresponding relationship between the current and temperature of the resistor element and the general level, that is, the greater the abnormality, the greater the possibility that the resistor element is faulty. The degree of fault performance of each resistor element is shown in formula (6):

[0087] (6);

[0088] in, Indicates The degree of failure performance of each resistor element; Indicates The abnormality of a resistor element. The larger the value, the greater the deviation between the corresponding relationship between the current data and the temperature data of the resistor element from the normal situation. The more likely it is that there is a fault that affects normal operation, and the greater the degree of fault manifestation. Indicates The change trend of the temperature difference in the neighborhood of a resistor element. The larger the value, the more consistent the change of the temperature difference in the neighborhood of the resistor element is with the operating state when the resistor element fails, and the greater the degree of fault manifestation.

[0089] 205 , based on the fault manifestation degree, monitor the operating state of the resistor array infrared scene generating device.

[0090] Here, by determining the numerical relationship between the fault manifestation degree and the preset threshold; wherein the numerical relationship includes: the fault manifestation degree is greater than or equal to the preset threshold, or the fault manifestation degree is less than the preset threshold and the difference with the mean of the fault manifestation degree of all resistor elements is greater than the preset difference threshold. Afterwards, based on the numerical relationship, the operating state of the resistor array infrared scene generating device is monitored. Wherein, the preset threshold can be a custom setting, for example, the preset threshold is 0.6, and the preset difference threshold can be 0.2. Here, according to the fault manifestation degree of each resistor element in the resistor array infrared scene generating device, the operating state of the generating device is analyzed, and when there is a fault manifestation degree of a resistor element greater than the preset threshold 0.6, it indicates that the resistor element may have a fault or the accuracy of generating infrared images is reduced. In other words, when there is a fault manifestation degree of a certain resistor element less than the preset threshold 0.6, and the difference between the fault manifestation degree of the corresponding resistor element and the mean of the fault manifestation degree of all resistor elements is greater than 0.2, it indicates that the resistor array infrared scene generating device has a fault or the accuracy of generating infrared images is reduced, and the personnel are immediately prompted to perform maintenance to improve the performance and reliability of the device.

[0091] In an embodiment of the present invention, after obtaining the current data and temperature data of the resistor element of the resistor array infrared scene generating device, the abnormality of the resistor element is calculated through the current data and the temperature data. In this way, by monitoring the change trend of the monitored temperature difference of the resistor element, the abnormality of the resistor element can be timely and accurately obtained. Afterwards, based on the temperature data, the change trend of the temperature difference of the resistor element in the neighborhood is determined. In this way, through the temperature data obtained in real time, the change trend of the temperature difference of the resistor element in the neighborhood can be accurately analyzed, so that it is convenient to determine the degree of fault manifestation of the resistor element through the abnormality and the change trend of the temperature difference, and monitor the operating state of the resistor array infrared scene generating device based on the fault manifestation degree. In this way, by monitoring the change trend of the temperature difference, the fault of the resistor element can be discovered in time to prevent the fault from spreading further. At the same time, through accurate fault monitoring, it is possible to reduce maintenance costs, avoid unnecessary inspections and replacements, reduce the incidence of system failures, and improve the reliability of the resistor array infrared scene generating device.

[0092] An embodiment of the present invention provides an operating status monitoring device for a resistor array infrared scene generating device, the device comprising:

[0093] An acquisition module, used for acquiring current data and temperature data of the resistance elements of the resistance array infrared scene generating device;

[0094] A first determination module, configured to determine the abnormality of the resistance element based on the current data and the temperature data;

[0095] A second determination module, configured to determine a change trend of a temperature difference of the resistance element within a neighborhood based on the temperature data;

[0096] A third determination module, configured to determine a fault manifestation degree of the resistance element based on a change trend of the abnormality and the temperature difference;

[0097] A monitoring module is used to monitor the operating state of the resistor array infrared scene generating device based on the degree of the fault manifestation.

[0098] In some possible implementations, the first determination module is further configured to determine a correspondence between the current data and the temperature data; and determine the abnormality of the resistance element based on the correspondence.

[0099] In some possible implementations, the first determination module is further used to determine an average correspondence based on the correspondence between the current data and the temperature data of each resistor element; and to determine the abnormality of any resistor element based on the correspondence between the current data and the temperature data of any resistor element and the average correspondence.

[0100] In some possible implementations, the second determination module is further used to determine the neighborhood of the resistor element based on each pixel point in the infrared image corresponding to the resistor element; determine the temperature difference between the expected temperature and the temperature data of the resistor element in the neighborhood; and determine the changing trend of the temperature difference of the resistor element in the neighborhood based on the temperature difference.

[0101] In some possible implementations, the second determination module is further used to determine, for any resistor element, based on the temperature difference, a degree of consistency in the rate of change of the temperature difference between a plurality of candidate resistor elements in a neighborhood of the any resistor element and the any resistor element; and to determine a trend of change of the temperature difference of the any resistor element in the neighborhood based on the degree of consistency in the rate of change and the temperature difference.

[0102] In some possible implementations, the second determination module is further used to determine an average temperature difference based on the temperature differences corresponding to multiple candidate resistor elements in the neighborhood; determine the difference between the average temperature difference and the temperature difference corresponding to any resistor element; and determine a changing trend of the temperature difference of any resistor element in the neighborhood based on the degree of consistency between the difference and the changing rate.

[0103] In some possible implementations, the third determination module is further configured to merge the abnormality degree and the change trend of the temperature difference to obtain the fault manifestation degree of the resistance element.

[0104] In some possible implementations, the monitoring module is further used to determine a numerical relationship between the fault manifestation degree and a preset threshold; and based on the numerical relationship, monitor the operating state of the resistor array infrared scene generating device.

[0105] In some possible implementations, the acquisition module is further used to acquire the input current allocated to each resistor element by the resistor array infrared scene generating device; and determine the input current as the current data.

[0106] In some possible implementations, the acquisition module is further used to acquire a thermal distribution image corresponding to the resistor array infrared scene generation device; based on the thermal distribution image, determine the temperature data of each resistor element of the resistor array infrared scene generation device during operation.

[0107] Optionally, the transmission medium may be a wired link (such as but not limited to coaxial cable, optical fiber and digital subscriber line (DSL), etc.) or a wireless link (such as but not limited to wireless Fidelity (WIFI), Bluetooth and mobile device network, etc.). It should be noted that the device provided in the above embodiment is only illustrated by the division of the above functional modules. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the computer device is divided into different functional modules to complete all or part of the functions described above. In addition, the method embodiments provided in the above embodiments belong to the same concept. The specific implementation process is detailed in the method embodiments, which will not be repeated here.

[0108] Figure 5 is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. Figure 5 As shown, the electronic device 500 includes: a memory 501, a processor 502, and a computer program 503 stored in the memory 501 and running on the processor 502, wherein when the processor 502 executes the computer program 503, the device can execute any of the aforementioned methods for monitoring the operating status of a resistor array infrared scene generation device. In addition, the embodiment of the present invention also protects a device, which may include a memory and a processor, wherein the memory stores an executable program code, and the processor is used to call and execute the executable program code to execute a method for monitoring the operating status of a resistor array infrared scene generation device provided by an embodiment of the present invention.

[0109] This embodiment can divide the functional modules of the device according to the above method example. For example, it can correspond to each functional module, or two or more functions can be integrated into one processing module. The above integrated module can be implemented in the form of hardware. It should be noted that the division of modules in this embodiment is schematic and is only a logical function division. There may be other division methods in actual implementation. It should be noted that all relevant contents of each step involved in the above method embodiment can be referred to the functional description of the corresponding functional module, which will not be repeated here.

[0110] It should be understood that the device provided in this embodiment is used to execute the above-mentioned method for monitoring the operating status of a resistor array infrared scene generating device, so the same effect as the above-mentioned implementation method can be achieved. In the case of an integrated unit, the device may include a processing module and a storage module. Among them, when the device is applied to a device, the processing module can be used to control and manage the actions of the device. The storage module can be used to support the device to execute mutual program codes, etc. Among them, the processing module can be a processor or a controller, which can implement or execute various exemplary logic boxes, modules and circuits described in conjunction with the disclosure of the present invention. The processor can also be a combination that implements a computing function, such as a combination of one or more microprocessors, a combination of digital signal processing (DSP) and a microprocessor, etc., and the storage module can be a memory.

[0111] In addition, the device provided in the embodiment of the present invention may be a chip, a component or a module, and the chip may include a connected processor and a memory; wherein the memory is used to store instructions, and when the processor calls and executes the instructions, the chip may execute the operation status monitoring method of a resistor array infrared scene generating device provided in the above embodiment. This embodiment also provides a computer-readable storage medium, in which a computer program code is stored, and when the computer program code is executed on a computer, the computer executes the above-mentioned related method steps to implement the operation status monitoring method of a resistor array infrared scene generating device provided in the above embodiment.

[0112] The present embodiment also provides a computer program product. When the computer program product is run on a computer, the computer executes the above-mentioned related steps to implement a method for monitoring the operating state of a resistor array infrared scene generating device provided in the above embodiment. Among them, the device, computer-readable storage medium, computer program product or chip provided in the present embodiment are all used to execute the corresponding method provided above. Therefore, the beneficial effects that can be achieved can refer to the beneficial effects in the corresponding method provided above, and will not be repeated here. Through the description of the above implementation mode, the technicians in the relevant field can understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example. In practical applications, the above-mentioned function allocation can be completed by different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In the embodiments provided by the present invention, it should be understood that the disclosed device and method can be implemented in other ways. For example, the device embodiment described above is only schematic. For example, the division of modules or units is only a logical function division. There can be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interfaces, devices or units, which may be electrical, mechanical or other forms. It should be noted that the sequence of the above embodiments of the present invention is only for description and does not represent the advantages and disadvantages of the embodiments. The processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multi-tasking and parallel processing are also possible or may be advantageous. The various embodiments in this specification are described in a progressive manner, and the same and similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. The above content is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed by the present invention, which should be covered within the protection scope of the present invention.

Claims

1. A method for monitoring the operating status of a resistor array infrared scene generating device, It is characterized in that The method comprises: Acquiring current data and temperature data of the resistor elements of the resistor array infrared scene generating device; determining a degree of abnormality of the resistance element based on the current data and the temperature data; Based on the temperature data, determining a change trend of the temperature difference of the resistance element in a neighborhood; Determining a fault manifestation degree of the resistance element based on the abnormality and the change trend of the temperature difference; Based on the degree of the fault manifestation, monitoring the operating state of the resistor array infrared scene generating device; The determining the abnormality of the resistance element based on the current data and the temperature data comprises: The corresponding relationship between the current data and the temperature data is determined as follows: Among them, exp() represents the exponential function with the natural constant e as the base; represents the corresponding relationship between the current data and the temperature data of the i-th resistor element; Indicates the number of resistor elements in the resistor array; Indicates Current data of each resistor element; Indicates Temperature data of each resistor element; Indicates The Pearson correlation coefficient between the current data and the temperature data of the resistor element, Indicates Dynamic time-warping matching distance between current data and temperature data of each resistor element; Based on the correspondence between the current data and the temperature data of each resistor element, an average correspondence is determined; Based on the correspondence between the current data and the temperature data of any resistance element and the average correspondence, the abnormality of any resistance element is determined, and the formula is: in, Indicates The abnormality of each resistor element; Indicates The corresponding relationship between the current data and the temperature data of each resistance element; Indicates the average correspondence between the current data and the temperature data of the resistance element; The determining, based on the temperature data, a change trend of the temperature difference of the resistance element in the neighborhood includes: Determine a neighborhood of the resistor element based on each pixel point in the infrared image corresponding to the resistor element; In the neighborhood, the temperature difference between the expected temperature and the temperature data of the resistance element is determined, the formula is: in, Indicates The temperature difference between the expected temperature and the actual temperature of a resistor element; Indicates The expected temperature of each resistor element is the expected temperature response value of the resistor array infrared scene generating device, which is given by the regulating system of the resistor array infrared scene generating device; Indicates The temperature data actually monitored by each resistor element; For any resistor element, based on the temperature difference, the degree of consistency of the change rate of the temperature difference between a plurality of candidate resistor elements in the neighborhood of the resistor element and the resistor element is determined, and the formula is: Where, exp{} represents an exponential function with the natural constant e as the base; Indicates Resistor element All the resistance elements in the eight neighborhoods under the radius are compared with the The degree of consistency of the rate of change of the temperature difference of the resistor elements; The resistance element The number of all resistor elements in the eight-neighborhood under the radius; Indicates The temperature difference between the expected temperature and the actual temperature of the resistor element, and Not 0; Indicates Resistor element In the eight neighborhoods under the radius The temperature difference between the expected temperature and the actual temperature of a resistor element; Indicates Resistor element The average temperature difference between the expected temperature and the actual temperature of all resistor elements in the eight neighborhoods under the radius; Determining a change trend of the temperature difference of any resistor element in the neighborhood based on the consistency of the change rate and the temperature difference; The determining, based on the consistency of the change rate and the temperature difference, a change trend of the temperature difference of any resistor element in the neighborhood includes: determining an average temperature difference based on temperature differences corresponding to a plurality of candidate resistor elements in the neighborhood; Determining a difference between the average temperature difference and a temperature difference corresponding to any one of the resistance elements; Based on the consistency between the difference and the change rate, the change trend of the temperature difference of any resistor element in the neighborhood is determined, and the formula is: in, Indicates The variation trend of temperature difference in the neighborhood of each resistor element; Indicates the average correspondence between the current data and the temperature data of the resistance element; represents the average temperature difference, Indicates Resistor element All the resistance elements in the eight neighborhoods under the radius are compared with the The degree of consistency of the rate of change of the temperature difference of the resistor elements; The determining the degree of fault manifestation of the resistance element based on the change trend of the abnormality and the temperature difference includes: The abnormality and the temperature difference variation trends are combined to obtain the fault performance degree of the resistor element, and the formula is: in, Indicates The degree of failure performance of each resistor element; Indicates The abnormality of each resistor element, Indicates The variation trend of the temperature difference in the neighborhood of a resistor element.

2. The method for monitoring the operating status of a resistor array infrared scene generating device according to claim 1, It is characterized in that The step of monitoring the operating state of the resistor array infrared scene generating device based on the degree of the fault manifestation includes: Determining a numerical relationship between the fault manifestation degree and a preset threshold; Based on the numerical relationship, the operating status of the resistor array infrared scene generating device is monitored.

3. The method for monitoring the operating status of a resistor array infrared scene generating device according to claim 1, It is characterized in that The method of obtaining current data of a resistor element of a resistor array infrared scene generating device comprises: Acquiring the input current distributed to each resistor element by the resistor array infrared scene generating device; The input current is determined as the current data.

4. The method for monitoring the operating status of a resistor array infrared scene generating device according to claim 1, It is characterized in that Acquiring temperature data of a resistor element of a resistor array infrared scene generating device, including: Acquire a thermal distribution image corresponding to the resistor array infrared scene generating device; Based on the thermal distribution image, the temperature data of each resistor element of the resistor array infrared scene generating device during operation is determined.

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