A double crystal detection method and system for expanded wafers

Abstract

The present invention relates to the field of semiconductor technology, and in particular to a method and system for detecting twin crystals of expanded wafers, the method comprising: obtaining a scanned image of the expanded wafer, establishing a global coordinate system on the scanned image with the pixel points of the scanned image as the unit; identifying the crystal grains to be tested on the scanned image based on the target detection algorithm; confirming the coordinates of the center point of the crystal grains to be tested according to the coordinates of the pixel points in the identification frame; calculating the distance from the crystal grain to be tested to the adjacent crystal grains to be tested according to the coordinates of the center point of the crystal grain to be tested, and obtaining the actual spacing between each crystal grain to be tested and the adjacent crystal grains to be tested; traversing all the crystal grains to be tested, comparing the actual spacing between each crystal grain to be tested and the adjacent crystal grains to be tested with the preset standard spacing, and judging whether the crystal grain to be tested has twin crystals. The present invention can avoid interference caused by factors such as fluctuations in expansion spacing, skewed grain arrangement, and process debris on the wafer, reduce the abnormality rate, reduce the loss of normal products due to over-inspection, and improve production efficiency.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a double crystal detection method and system for expanded wafers. Background Art

[0002] Automatic Optical Inspection (AOI) is a detection method that uses camera lenses and different online light sources to collect images of wafers, quantify them into different grayscale values, and compare them with set values. With the advancement of the market for fine products such as Micro and Mini LED, the current dual-crystal detection for expanded wafers is basically conventional grayscale value + card control area detection, which cannot completely avoid the problem of wrong judgment caused by arrangement / expansion spacing, debris, contamination, rotation, etc., which leads to a large number of normal products being lost due to inspection, increased costs, and reduced benefits. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a double crystal detection method and system for expanded wafers.

[0004] The present invention adopts the following technical solution: a double crystal detection method for an expanded wafer, the method comprising:

[0005] Acquire a scanned image of the expanded wafer, and establish a global coordinate system on the scanned image using pixels of the scanned image as units;

[0006] Identifying the crystal grains to be tested on the scanned image based on a target detection algorithm, wherein each of the crystal grains to be tested corresponds to an identification frame;

[0007] Confirming the coordinates of the center point of the grain to be measured according to the coordinates of the pixel points in the identification frame;

[0008] Calculating the distance between the crystal grain to be measured and the adjacent crystal grain to be measured according to the coordinates of the center point of the crystal grain to be measured, and obtaining the actual distance between each crystal grain to be measured and the adjacent crystal grain to be measured;

[0009] All the crystal grains to be tested are traversed, and the actual spacing between each crystal grain to be tested and the adjacent crystal grain to be tested is compared with a preset standard spacing to determine whether twin crystals occur in the crystal grain to be tested.

[0010] A twin crystal detection method for expanded wafers according to an embodiment of the present invention establishes a global coordinate system in units of pixels on a scanned image, and uses a pre-trained target detection algorithm to identify each grain to be tested on the scanned image, and then determines the center coordinates of the grain to be tested based on the pixels falling within the identification frame, obtains the center position of each grain to be tested, and thereby calculates the actual spacing between adjacent grains to be tested, and finally compares the actual spacing with the standard spacing to determine whether twin crystals appear in the corresponding grain to be tested. The center point of the grain to be tested is located based on the pixel points, and the spacing between adjacent grains to be tested is calculated, which has higher accuracy and can avoid interference caused by factors such as fluctuations in the expansion spacing, skewed grain arrangement, and process debris on the wafer, thereby reducing misjudgment of twin crystals, reducing the abnormality rate, reducing the loss of normal products that pass inspection, and effectively improving production efficiency.

[0011] Furthermore, the step of acquiring a scanned image of the expanded wafer and establishing a global coordinate system on the scanned image using pixels of the scanned image as units specifically includes:

[0012] Obtaining a scan image of the expanded wafer based on a CCD camera;

[0013] A global coordinate system is established with the upper left vertex of the scanned image as the origin, the upper side of the scanned image as the x-axis, the left side of the scanned image as the y-axis, and the pixel points of the scanned image as units.

[0014] Furthermore, the step of confirming the coordinates of the center point of the to-be-measured grain according to the coordinates of the pixel points in the identification frame specifically includes:

[0015] Selecting four pixels in the recognition frame that are closest to the four corners of the recognition frame, and using the coordinates of the four pixels as the four corner coordinates of the recognition frame, wherein the line thickness of the recognition frame is less than the distance between two adjacent pixels;

[0016] The absolute value of half the difference between the horizontal coordinates of the two corners on any horizontal axis of the identification frame is taken as the horizontal coordinate of the center point of the grain to be measured, and the absolute value of half the difference between the vertical coordinates of the two corners on any vertical axis of the identification frame is taken as the vertical coordinate of the center point of the grain to be measured.

[0017] Further, the step of calculating the distance between the crystal grain to be tested and the adjacent crystal grain to be tested according to the center point coordinates of the crystal grain to be tested to obtain the actual distance between each crystal grain to be tested and the adjacent crystal grain to be tested specifically includes:

[0018] Let the crystal grain to be tested be , and the measured grain The upper adjacent grain to be tested is , and the measured grain The adjacent crystal grain to be tested at the lower side is , and the measured grain The adjacent grain to be tested on the left is , and the measured grain The adjacent grain to be tested on the right is ; and the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are The grain to be tested The center point coordinates are ;

[0019] Define the die to be tested to the die to be tested The center distance is the upper side spacing, and the measured grains to the die to be tested The center distance is the lower side spacing, and the measured grains to the die to be tested The center distance is the left spacing, and the measured grain to the die to be tested The center distance is the right side spacing; wherein the actual spacing between each of the to-be-tested crystal grains and the adjacent to-be-tested crystal grains is composed of the upper side spacing, the lower side spacing, the left side spacing and the right side spacing;

[0020] The crystal grain to be tested The corresponding upper spacing is:

[0021]

[0022] in, The crystal grain to be tested The corresponding upper spacing, is the resolution of the scanned image;

[0023] The crystal grain to be tested The corresponding bottom spacing is:

[0024]

[0025] in, The crystal grain to be tested The corresponding lower side spacing;

[0026] The crystal grain to be tested The corresponding left spacing is:

[0027]

[0028] in, The crystal grain to be tested The corresponding left spacing;

[0029] The crystal grain to be tested The corresponding right spacing is:

[0030]

[0031] in, The crystal grain to be tested The corresponding right spacing;

[0032] If the crystal grain to be tested There is no upper adjacent grain to be tested. , then let the grain to be tested Corresponding upper spacing ;

[0033] If the crystal grain to be tested There is no adjacent lower side of the measured grain , then let the grain to be tested Corresponding bottom spacing ;

[0034] If the crystal grain to be tested There is no adjacent grain to the left. , then let the grain to be tested Corresponding left spacing ;

[0035] If the crystal grain to be tested There is no adjacent grain to the right. , then let the grain to be tested Corresponding right spacing .

[0036] Furthermore, the step of comparing the actual spacing between each of the tested grains and the adjacent tested grains with a preset standard spacing to determine whether twinning occurs in the tested grains specifically includes:

[0037] The standard spacing is determined according to the standard size of the grain to be measured, wherein the standard spacing includes a transverse standard spacing and a longitudinal standard spacing, and the transverse standard spacing is the length of the standard size of the grain to be measured, denoted as , the longitudinal standard spacing is the width of the standard size of the grain to be measured, denoted as ;

[0038] When the measured grain Corresponding Any one of , or the grain to be tested Corresponding Any one of When the crystal grain to be tested is Twin crystals appear.

[0039] The present invention also provides a dual-wafer detection system for an expanded wafer, the system comprising:

[0040] An acquisition module, used for acquiring a scanned image of the expanded wafer, and establishing a global coordinate system on the scanned image with pixel points of the scanned image as units;

[0041] An identification module, used for identifying the crystal grains to be tested on the scanned image based on a target detection algorithm, wherein each crystal grain to be tested corresponds to an identification frame;

[0042] A first calculation module, used for confirming the coordinates of the center point of the grain to be measured according to the coordinates of the pixel points in the identification frame;

[0043] A second calculation module is used to calculate the distance between the crystal grain to be measured and the adjacent crystal grain to be measured according to the center point coordinates of the crystal grain to be measured, so as to obtain the actual distance between each crystal grain to be measured and the adjacent crystal grain to be measured;

[0044] The judgment module is used to traverse all the crystal grains to be tested, compare the actual spacing between each crystal grain to be tested and the adjacent crystal grain to be tested with a preset standard spacing, and judge whether twin crystals appear in the crystal grains to be tested.

[0045] A twin crystal detection system for expanded wafers according to an embodiment of the present invention establishes a global coordinate system in units of pixels on a scanned image, and uses a pre-trained target detection algorithm to identify each grain to be tested on the scanned image, and then determines the center coordinates of the grain to be tested based on the pixels falling within the identification frame, obtains the center position of each grain to be tested, and thereby calculates the actual spacing between adjacent grains to be tested, and finally compares the actual spacing with the standard spacing to determine whether twin crystals appear in the corresponding grain to be tested. The center point of the grain to be tested is located based on the pixel points, and the spacing between adjacent grains to be tested is calculated, which has higher accuracy and can avoid interference caused by factors such as fluctuations in the expanded spacing, skewed grain arrangement, and process debris on the wafer, thereby reducing misjudgment of twin crystals, reducing the abnormality rate, reducing the loss of normal products that pass inspection, and effectively improving production efficiency.

[0046] Furthermore, the acquisition module is specifically used for:

[0047] Obtaining a scan image of the expanded wafer based on a CCD camera;

[0048] A global coordinate system is established with the upper left vertex of the scanned image as the origin, the upper side of the scanned image as the x-axis, the left side of the scanned image as the y-axis, and the pixel points of the scanned image as units.

[0049] Furthermore, the first calculation module is specifically used for:

[0050] Selecting four pixels in the recognition frame that are closest to the four corners of the recognition frame, and using the coordinates of the four pixels as the four corner coordinates of the recognition frame, wherein the line thickness of the recognition frame is less than the distance between two adjacent pixels;

[0051] The absolute value of half the difference between the horizontal coordinates of the two corners on any horizontal axis of the identification frame is taken as the horizontal coordinate of the center point of the grain to be measured, and the absolute value of half the difference between the vertical coordinates of the two corners on any vertical axis of the identification frame is taken as the vertical coordinate of the center point of the grain to be measured.

[0052] Furthermore, the second calculation module is specifically used for:

[0053] Let the crystal grain to be tested be , and the measured grain The upper adjacent grain to be tested is , and the measured grain The adjacent crystal grain to be tested at the lower side is , and the measured grain The adjacent grain to be tested on the left is , and the measured grain The adjacent grain to be tested on the right is ; and the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are The grain to be tested The center point coordinates are ;

[0054] Define the die to be tested to the die to be tested The center distance is the upper side spacing, and the measured grains to the die to be tested The center distance is the lower side spacing, and the measured grains to the die to be tested The center distance is the left spacing, and the measured grain to the die to be tested The center distance is the right side spacing; wherein the actual spacing between each of the to-be-tested crystal grains and the adjacent to-be-tested crystal grains is composed of the upper side spacing, the lower side spacing, the left side spacing and the right side spacing;

[0055] The crystal grain to be tested The corresponding upper spacing is:

[0056]

[0057] in, The crystal grain to be tested The corresponding upper spacing, is the resolution of the scanned image;

[0058] The crystal grain to be tested The corresponding bottom spacing is:

[0059]

[0060] in, The crystal grain to be tested The corresponding lower side spacing;

[0061] The crystal grain to be tested The corresponding left spacing is:

[0062]

[0063] in, The crystal grain to be tested The corresponding left spacing;

[0064] The crystal grain to be tested The corresponding right spacing is:

[0065]

[0066] in, The crystal grain to be tested The corresponding right spacing;

[0067] If the crystal grain to be tested There is no upper adjacent grain to be tested. , then let the grain to be tested Corresponding upper spacing ;

[0068] If the crystal grain to be tested There is no adjacent lower side of the measured grain , then let the grain to be tested Corresponding bottom spacing ;

[0069] If the crystal grain to be tested There is no adjacent grain to the left. , then let the grain to be tested Corresponding left spacing ;

[0070] If the crystal grain to be tested There is no adjacent grain to the right. , then let the grain to be tested Corresponding right spacing .

[0071] Furthermore, the judgment module is specifically used for:

[0072] The standard spacing is determined according to the standard size of the grain to be measured, wherein the standard spacing includes a transverse standard spacing and a longitudinal standard spacing, and the transverse standard spacing is the length of the standard size of the grain to be measured, denoted as , the longitudinal standard spacing is the width of the standard size of the grain to be measured, denoted as ;

[0073] When the measured grain Corresponding Any one of , or the grain to be tested Corresponding Any one of When the crystal grain to be tested is Twin crystals appear. BRIEF DESCRIPTION OF THE DRAWINGS

[0074] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0075] Figure 1 It is a flow chart of a double wafer detection method for an expanded wafer according to a first embodiment of the present invention;

[0076] Figure 2 Schematic diagram of the principle of step S4 in the double wafer detection method for expanded wafers according to the first embodiment of the present invention;

[0077] Figure 3 FIG. 4 is a structural block diagram of a dual wafer inspection system for expanded wafers according to a second embodiment of the present invention. DETAILED DESCRIPTION

[0078] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the embodiments of the present invention, and should not be construed as limiting the present invention.

[0079] In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0080] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0081] In the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0082] Embodiment 1

[0083] Reference Figure 1 to Figure 2 The first embodiment of the present invention is a double crystal detection method for an expanded wafer, the method comprising:

[0084] S1: Obtain a scanned image of the expanded wafer, and establish a global coordinate system on the scanned image using pixels of the scanned image as units; further, the steps specifically include:

[0085] Obtaining a scan image of the expanded wafer based on a CCD camera;

[0086] A global coordinate system is established with the upper left vertex of the scanned image as the origin, the upper side of the scanned image as the x-axis, the left side of the scanned image as the y-axis, and the pixel points of the scanned image as the unit.

[0087] S2: Identify the grains to be tested on the scanned image based on the target detection algorithm, wherein each grain to be tested corresponds to an identification frame; in this embodiment, the target detection algorithm adopts the mature YOLOv7 algorithm. After training and convergence, the YOLOv7 algorithm can accurately identify the grains on the expanded wafer and select the grains using the identification frame.

[0088] S3: Confirm the coordinates of the center point of the grain to be measured according to the coordinates of the pixel points in the identification frame; further, the steps specifically include:

[0089] Select four pixel points in the identification frame that are closest to the four corners of the identification frame, and use the coordinates of the four pixel points as the four corner coordinates of the identification frame, wherein the line thickness of the identification frame is less than the distance between two adjacent pixel points; this can further ensure the accuracy of the selection of the four corner coordinates of the identification frame, thereby ensuring the accuracy of the coordinates of the center point of the grain to be measured;

[0090] The absolute value of half the difference between the horizontal coordinates of the two corners on any horizontal axis of the identification frame is taken as the horizontal coordinate of the center point of the grain to be measured, and the absolute value of half the difference between the vertical coordinates of the two corners on any vertical axis of the identification frame is taken as the vertical coordinate of the center point of the grain to be measured.

[0091] In this embodiment, the pixel points at the four corners of the recognition frame are respectively , top right , bottom left , bottom right , then the center point of the grain to be measured corresponding to the identification frame for:

[0092]

[0093]

[0094] in, , , so there is no need to take the absolute value of the difference.

[0095] S4: Calculate the distance between the crystal grain to be tested and the adjacent crystal grain to be tested according to the coordinates of the center point of the crystal grain to be tested, and obtain the actual distance between each crystal grain to be tested and the adjacent crystal grain to be tested; further, the steps specifically include:

[0096] Let a crystal to be tested be , and the grain to be tested The adjacent grain to be tested on the upper side is , and the grain to be tested The adjacent grain to be tested on the lower side is , and the grain to be tested The adjacent grain to be tested on the left is , and the grain to be tested The adjacent grain to be tested on the right is ; and the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are ; Grain to be tested The center point coordinates are ;

[0097] Define the die to be tested To the die to be tested The center distance is the upper side spacing, and the grain to be measured To the die to be tested The center distance is the lower side spacing, and the grain to be measured To the die to be tested The center distance is the left spacing, and the grain to be measured To the die to be tested The center distance is the right spacing; wherein the actual spacing between each measured crystal grain and the adjacent measured crystal grain is composed of the upper spacing, the lower spacing, the left spacing and the right spacing;

[0098] Die to be tested The corresponding upper spacing is:

[0099]

[0100] in, For the crystal to be tested The corresponding upper spacing, is the resolution of the scanned image;

[0101] Die to be tested The corresponding bottom spacing is:

[0102]

[0103] in, For the crystal to be tested The corresponding lower side spacing;

[0104] Die to be tested The corresponding left spacing is:

[0105]

[0106] in, For the crystal to be tested The corresponding left spacing;

[0107] Die to be tested The corresponding right spacing is:

[0108]

[0109] in, For the crystal to be tested The corresponding right spacing;

[0110] If the grain to be tested There is no adjacent die to be tested on the upper side , then let the grain to be tested Corresponding upper spacing ;

[0111] If the grain to be tested There is no adjacent die to be tested on the lower side , then let the grain to be tested Corresponding bottom spacing ;

[0112] If the grain to be tested There is no adjacent die to the left. , then let the grain to be tested Corresponding left spacing ;

[0113] If the grain to be tested There is no adjacent die to the right. , then let the grain to be tested Corresponding right spacing .

[0114] S5: traverse all the grains to be tested, compare the actual spacing between each grain to be tested and the adjacent grain to be tested with the preset standard spacing, and determine whether twin crystals appear in the grains to be tested;

[0115] Furthermore, the actual spacing between each tested grain and the adjacent tested grain is compared with a preset standard spacing to determine whether twinning occurs in the tested grains. Specifically, the step includes:

[0116] The standard spacing is determined according to the standard size of the grain to be measured, wherein the standard spacing includes a transverse standard spacing and a longitudinal standard spacing. The transverse standard spacing is the length of the standard size of the grain to be measured, denoted as , the longitudinal standard spacing is the width of the standard size of the grain to be measured, recorded as ;

[0117] When the crystal to be tested Corresponding Any one of , or the grain to be tested Corresponding Any one of When Twin crystals appear.

[0118] A twin crystal detection method for expanded wafers according to an embodiment of the present invention establishes a global coordinate system in units of pixels on a scanned image, and uses a pre-trained target detection algorithm to identify each grain to be tested on the scanned image, and then determines the center coordinates of the grain to be tested based on the pixels falling within the identification frame, obtains the center position of each grain to be tested, and thereby calculates the actual spacing between adjacent grains to be tested, and finally compares the actual spacing with the standard spacing to determine whether twin crystals appear in the corresponding grain to be tested. The center point of the grain to be tested is located based on the pixel points, and the spacing between adjacent grains to be tested is calculated, which has higher accuracy and can avoid interference caused by factors such as fluctuations in the expansion spacing, skewed grain arrangement, and process debris on the wafer, thereby reducing misjudgment of twin crystals, reducing the abnormality rate, reducing the loss of normal products that pass inspection, and effectively improving production efficiency.

[0119] Embodiment 2

[0120] Reference Figure 3 The present invention also provides a dual-crystal detection system for an expanded wafer, the system comprising:

[0121] An acquisition module, used for acquiring a scanned image of the expanded wafer, and establishing a global coordinate system on the scanned image with the pixel points of the scanned image as units;

[0122] An identification module is used to identify the crystal grains to be tested on the scanned image based on a target detection algorithm, wherein each crystal grain to be tested corresponds to an identification frame;

[0123] A first calculation module is used to confirm the coordinates of the center point of the grain to be measured according to the coordinates of the pixel points in the identification frame;

[0124] A second calculation module is used to calculate the distance between the crystal grain to be measured and the adjacent crystal grain to be measured according to the center point coordinates of the crystal grain to be measured, so as to obtain the actual distance between each crystal grain to be measured and the adjacent crystal grain to be measured;

[0125] The judgment module is used to traverse all the crystal grains to be tested, compare the actual spacing between each crystal grain to be tested and the adjacent crystal grain to be tested with the preset standard spacing, and judge whether the crystal grain to be tested has twin crystals.

[0126] Furthermore, the acquisition module is specifically used for:

[0127] Obtaining a scan image of the expanded wafer based on a CCD camera;

[0128] A global coordinate system is established with the upper left vertex of the scanned image as the origin, the upper side of the scanned image as the x-axis, the left side of the scanned image as the y-axis, and the pixel points of the scanned image as the unit.

[0129] Furthermore, the first calculation module is specifically used for:

[0130] Select four pixels in the recognition frame that are closest to the four corners of the recognition frame, and use the coordinates of the four pixels as the four corner coordinates of the recognition frame, wherein the line thickness of the recognition frame is less than the distance between two adjacent pixels;

[0131] The absolute value of half the difference between the horizontal coordinates of the two corners on any horizontal axis of the identification frame is taken as the horizontal coordinate of the center point of the grain to be measured, and the absolute value of half the difference between the vertical coordinates of the two corners on any vertical axis of the identification frame is taken as the vertical coordinate of the center point of the grain to be measured.

[0132] Furthermore, the second calculation module is specifically used for:

[0133] Let a crystal to be tested be , and the grain to be tested The adjacent grain to be tested on the upper side is , and the grain to be tested The adjacent grain to be tested on the lower side is , and the grain to be tested The adjacent grain to be tested on the left is , and the grain to be tested The adjacent grain to be tested on the right is ; and the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are ; Grain to be tested The center point coordinates are ;

[0134] Define the die to be tested To the die to be tested The center distance is the upper side spacing, and the grain to be measured To the die to be tested The center distance is the lower side spacing, and the grain to be measured To the die to be tested The center distance is the left spacing, and the grain to be measured To the die to be tested The center distance is the right spacing; wherein the actual spacing between each measured crystal grain and the adjacent measured crystal grain is composed of the upper spacing, the lower spacing, the left spacing and the right spacing;

[0135] Die to be tested The corresponding upper spacing is:

[0136]

[0137] in, For the crystal to be tested The corresponding upper spacing, is the resolution of the scanned image;

[0138] Die to be tested The corresponding bottom spacing is:

[0139]

[0140] in, For the crystal to be tested The corresponding lower side spacing;

[0141] Die to be tested The corresponding left spacing is:

[0142]

[0143] in, For the crystal to be tested The corresponding left spacing;

[0144] Die to be tested The corresponding right spacing is:

[0145]

[0146] in, For the crystal to be tested The corresponding right spacing;

[0147] If the grain to be tested There is no adjacent die to be tested on the upper side , then let the grain to be tested Corresponding upper spacing ;

[0148] If the grain to be tested There is no adjacent die to be tested on the lower side , then let the grain to be tested Corresponding bottom spacing ;

[0149] If the grain to be tested There is no adjacent die to the left. , then let the grain to be tested Corresponding left spacing ;

[0150] If the grain to be tested There is no adjacent die to the right. , then let the grain to be tested Corresponding right side spacing .

[0151] Furthermore, the judgment module is specifically used for:

[0152] The standard spacing is determined according to the standard size of the grain to be measured, wherein the standard spacing includes a transverse standard spacing and a longitudinal standard spacing. The transverse standard spacing is the length of the standard size of the grain to be measured, denoted as , the longitudinal standard spacing is the width of the standard size of the grain to be measured, recorded as ;

[0153] When the crystal to be tested Corresponding Any one of , or the grain to be tested Corresponding Any one of When Twin crystals appear.

[0154] A twin crystal detection system for expanded wafers according to an embodiment of the present invention establishes a global coordinate system in units of pixels on a scanned image, and uses a pre-trained target detection algorithm to identify each grain to be tested on the scanned image, and then determines the center coordinates of the grain to be tested based on the pixels falling within the identification frame, obtains the center position of each grain to be tested, and thereby calculates the actual spacing between adjacent grains to be tested, and finally compares the actual spacing with the standard spacing to determine whether twin crystals appear in the corresponding grain to be tested. The center point of the grain to be tested is located based on the pixel points, and the spacing between adjacent grains to be tested is calculated, which has higher accuracy and can avoid interference caused by factors such as fluctuations in the expanded spacing, skewed grain arrangement, and process debris on the wafer, thereby reducing misjudgment of twin crystals, reducing the abnormality rate, reducing the loss of normal products that pass inspection, and effectively improving production efficiency.

[0155] Embodiment 3

[0156] The third embodiment of the present invention is based on the same inventive concept and proposes a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the dual crystal detection method for expanded wafers of the above embodiment are implemented.

[0157] The logic and / or steps represented in the flowchart or otherwise described herein, for example, may be considered as an ordered list of executable instructions for implementing logical functions, and may be embodied in any computer-readable medium for use by an instruction execution system, device or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or apparatus and execute instructions), or in conjunction with such instruction execution system, device or apparatus. For purposes of this specification, "computer-readable medium" may be any device that contains storage, communication, propagation or transmission of a program for use by an instruction execution system, device or apparatus, or in conjunction with such instruction execution system, device or apparatus.

[0158] More specific examples of computer-readable media (a non-exhaustive list) include the following: an electrical connection with one or more wires (electronic device), a portable computer disk case (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable medium may even be a paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, deciphering or, if necessary, processing in another suitable manner, and then stored in a computer memory.

[0159] Among them, the memory may include a large-capacity memory for data or instructions. By way of example and not limitation, the memory may include a hard disk drive (HDD), a floppy disk drive, a solid-state drive (SSD), a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. Where appropriate, the memory may include a removable or non-removable (or fixed) medium. Where appropriate, the memory may be inside or outside the data processing device. In a specific embodiment, the memory is a non-volatile memory. In a specific embodiment, the memory includes a read-only memory (ROM) and a random access memory (RAM). Where appropriate, the ROM may be a mask-programmed ROM, a programmable ROM (PROM), an erasable PROM (EPROM), an electrically erasable PROM (EEPROM), an electrically alterable ROM (EAROM) or a flash memory (FLASH), or a combination of two or more of these. Under appropriate circumstances, the RAM can be a static random access memory (SRAM) or a dynamic random access memory (DRAM), wherein the DRAM can be a fast page mode dynamic random access memory (FPMDRAM), an extended data output dynamic random access memory (EDODRAM), a synchronous dynamic random access memory (SDRAM), etc.

[0160] Embodiment 4

[0161] The fourth embodiment of the present invention is based on the same inventive concept. The present invention proposes a terminal, which includes: a processor and a memory; the processor and the memory communicate with each other; the memory is used to store instructions; the processor is used to execute the instructions in the memory, and execute the dual crystal detection method for expanded wafers of the above embodiment.

[0162] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0163] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0164] Under the premise that no conflict occurs, those skilled in the art may freely combine and superimpose the above-mentioned additional technical features.

[0165] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for detecting double crystals of an expanded wafer, characterized in that: The method comprises: Acquire a scanned image of the expanded wafer, and establish a global coordinate system on the scanned image using pixels of the scanned image as units; Identifying the crystal grains to be tested on the scanned image based on a target detection algorithm, wherein each of the crystal grains to be tested corresponds to an identification frame; Confirming the coordinates of the center point of the grain to be measured according to the coordinates of the pixel points in the identification frame; Calculating the distance between the crystal grain to be measured and the adjacent crystal grain to be measured according to the coordinates of the center point of the crystal grain to be measured, and obtaining the actual distance between each crystal grain to be measured and the adjacent crystal grain to be measured; Traversing all the crystal grains to be tested, comparing the actual spacing between each crystal grain to be tested and the adjacent crystal grain to be tested with a preset standard spacing, and determining whether twinning occurs in the crystal grain to be tested; The step of confirming the coordinates of the center point of the to-be-measured grain according to the coordinates of the pixel points in the identification frame specifically comprises: Selecting four pixels in the recognition frame that are closest to the four corners of the recognition frame, and using the coordinates of the four pixels as the four corner coordinates of the recognition frame, wherein the line thickness of the recognition frame is less than the distance between two adjacent pixels; The absolute value of half the difference between the horizontal coordinates of two corners on any horizontal axis of the identification frame is taken as the horizontal coordinate of the center point of the grain to be measured, and the absolute value of half the difference between the vertical coordinates of two corners on any vertical axis of the identification frame is taken as the vertical coordinate of the center point of the grain to be measured; The step of calculating the distance between the crystal grain to be tested and the adjacent crystal grain to be tested according to the coordinates of the center point of the crystal grain to be tested to obtain the actual distance between each crystal grain to be tested and the adjacent crystal grain to be tested specifically includes: Let the crystal grain to be tested be , and the measured grain The upper adjacent grain to be tested is , and the measured grain The adjacent crystal grain to be tested at the lower side is , and the measured grain The adjacent grain to be tested on the left is , and the measured grain The adjacent grain to be tested on the right is ; and the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are The grain to be tested The center point coordinates are ; Define the die to be tested to the die to be tested The center distance is the upper side spacing, and the measured grains to the die to be tested The center distance is the lower side spacing, and the measured grains to the die to be tested The center distance is the left spacing, and the measured grain to the die to be tested The center distance is the right side spacing; wherein the actual spacing between each of the to-be-tested crystal grains and the adjacent to-be-tested crystal grains is composed of the upper side spacing, the lower side spacing, the left side spacing and the right side spacing; The crystal grain to be tested The corresponding upper spacing is: in, The crystal grain to be tested The corresponding upper spacing, is the resolution of the scanned image; The crystal grain to be tested The corresponding bottom spacing is: in, The crystal grain to be tested The corresponding lower spacing; The crystal grain to be tested The corresponding left spacing is: in, The crystal grain to be tested The corresponding left spacing; The crystal grain to be tested The corresponding right spacing is: in, The crystal grain to be tested The corresponding right spacing; If the crystal grain to be tested There is no upper adjacent grain to be tested. , then let the grain to be tested Corresponding upper spacing ; If the crystal grain to be tested There is no adjacent lower side of the measured grain , then let the grain to be tested Corresponding bottom spacing ; If the crystal grain to be tested There is no adjacent grain to the left. , then let the grain to be tested Corresponding left spacing ; If the crystal grain to be tested There is no adjacent grain to the right. , then let the grain to be tested Corresponding right side spacing .

2. The double crystal detection method for an expanded wafer according to claim 1, characterized in that: The steps of obtaining a scanned image of the expanded wafer and establishing a global coordinate system on the scanned image using pixels of the scanned image as units specifically include: Obtaining a scan image of the expanded wafer based on a CCD camera; A global coordinate system is established with the upper left vertex of the scanned image as the origin, the upper side of the scanned image as the x-axis, the left side of the scanned image as the y-axis, and the pixel points of the scanned image as units.

3. The double crystal detection method for an expanded wafer according to claim 1, characterized in that: The step of comparing the actual spacing between each of the tested grains and the adjacent tested grains with a preset standard spacing to determine whether twinning occurs in the tested grains specifically includes: The standard spacing is determined according to the standard size of the grain to be measured, wherein the standard spacing includes a transverse standard spacing and a longitudinal standard spacing, and the transverse standard spacing is the length of the standard size of the grain to be measured, denoted as , the longitudinal standard spacing is the width of the standard size of the grain to be measured, recorded as ; When the measured grain Corresponding Any one of , or the grain to be tested Corresponding Any one of When the crystal grain to be tested is Twin crystals appear.

4. A dual crystal detection system for an expanded wafer, characterized in that: The system comprises: An acquisition module, used for acquiring a scanned image of the expanded wafer, and establishing a global coordinate system on the scanned image with pixel points of the scanned image as units; An identification module, used for identifying the crystal grains to be tested on the scanned image based on a target detection algorithm, wherein each crystal grain to be tested corresponds to an identification frame; A first calculation module, used for confirming the coordinates of the center point of the grain to be measured according to the coordinates of the pixel points in the identification frame; A second calculation module is used to calculate the distance between the crystal grain to be measured and the adjacent crystal grain to be measured according to the center point coordinates of the crystal grain to be measured, so as to obtain the actual distance between each crystal grain to be measured and the adjacent crystal grain to be measured; A judgment module, used for traversing all the crystal grains to be tested, comparing the actual spacing between each crystal grain to be tested and the adjacent crystal grain to be tested with a preset standard spacing, and judging whether twin crystals occur in the crystal grains to be tested; The first calculation module is specifically used for: Selecting four pixels in the recognition frame that are closest to the four corners of the recognition frame, and using the coordinates of the four pixels as the four corner coordinates of the recognition frame, wherein the line thickness of the recognition frame is less than the distance between two adjacent pixels; The absolute value of half the difference between the horizontal coordinates of two corners on any horizontal axis of the identification frame is taken as the horizontal coordinate of the center point of the grain to be measured, and the absolute value of half the difference between the vertical coordinates of two corners on any vertical axis of the identification frame is taken as the vertical coordinate of the center point of the grain to be measured; The second calculation module is specifically used for: Let the crystal grain to be tested be , and the measured grain The upper adjacent grain to be tested is , and the measured grain The adjacent crystal grain to be tested at the lower side is , and the measured grain The adjacent grain to be tested on the left is , and the measured grain The adjacent grain to be tested on the right is ; and the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are , the grain to be tested The center point coordinates are The grain to be tested The center point coordinates are ; Define the die to be tested to the die to be tested The center distance is the upper side spacing, and the measured grains to the die to be tested The center distance is the lower side spacing, and the measured grains to the die to be tested The center distance is the left spacing, and the measured grain to the die to be tested The center distance is the right side spacing; wherein the actual spacing between each of the to-be-tested crystal grains and the adjacent to-be-tested crystal grains is composed of the upper side spacing, the lower side spacing, the left side spacing and the right side spacing; The crystal grain to be tested The corresponding upper spacing is: in, The crystal grain to be tested The corresponding upper spacing, is the resolution of the scanned image; The crystal grain to be tested The corresponding bottom spacing is: in, The crystal grain to be tested The corresponding lower spacing; The crystal grain to be tested The corresponding left spacing is: in, The crystal grain to be tested The corresponding left spacing; The crystal grain to be tested The corresponding right spacing is: in, The crystal grain to be tested The corresponding right spacing; If the crystal grain to be tested There is no upper adjacent grain to be tested. , then let the grain to be tested Corresponding upper spacing ; If the crystal grain to be tested There is no adjacent lower side of the measured grain , then let the grain to be tested Corresponding bottom spacing ; If the crystal grain to be tested There is no adjacent grain to the left. , then let the grain to be tested Corresponding left spacing ; If the crystal grain to be tested There is no adjacent grain to the right. , then let the grain to be tested Corresponding right side spacing .

5. The double crystal detection system for expanded wafers according to claim 4, characterized in that: The acquisition module is specifically used for: Obtaining a scan image of the expanded wafer based on a CCD camera; A global coordinate system is established with the upper left vertex of the scanned image as the origin, the upper side of the scanned image as the x-axis, the left side of the scanned image as the y-axis, and the pixel points of the scanned image as units.

6. The double crystal detection system for expanded wafers according to claim 4, characterized in that: The judgment module is specifically used for: The standard spacing is determined according to the standard size of the grain to be measured, wherein the standard spacing includes a transverse standard spacing and a longitudinal standard spacing, and the transverse standard spacing is the length of the standard size of the grain to be measured, denoted as , the longitudinal standard spacing is the width of the standard size of the grain to be measured, recorded as ; When the measured grain Corresponding Any one of , or the grain to be tested Corresponding Any one of When the crystal grain to be tested is Twin crystals appear.

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