Power module with balanced current flow

Abstract

The present disclosure relates to a power module designed to have balanced current flow for each parallel power switch such that each power switch has a similar current path length. The power module can include a first plurality of power switches electrically coupled to a first region and a second plurality of power switches electrically coupled to a second region. A first plurality of conductive clips is configured to conduct a first plurality of currents and a second plurality of conductive clips is configured to conduct a second plurality of currents. The power module can include a first leadframe configured to apply a positive voltage to the first region, a second leadframe configured to conduct current from the second region, and a third leadframe configured to conduct current from the third region.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Provisional Patent Application Serial No. 63 / 501,913, filed May 12, 2023, entitled “POWER MODULE WITH BALANCED CORRENT FLOW,” the contents of which are incorporated herein by reference in their entirety for all purposes. Technical Field

[0003] The described embodiments generally relate to power electronic devices comprising one or more semiconductor dies. More specifically, this embodiment relates to power electronic devices having semiconductor dies arranged to provide balanced current flow in each semiconductor die. Background Technology

[0004] Currently, there are many types of power modules used for power management. A power module may include multiple semiconductor switches. However, when there is a current imbalance among one or more of the semiconductor switches, the switching performance and reliability of the power module may be affected. New electronic packaging architectures are needed to provide balanced current flow in the power module. Summary of the Invention

[0005] In some embodiments, a power module is disclosed. The power module includes a substrate. The substrate includes an electrically insulating layer. Furthermore, the substrate includes a first conductive region disposed on the electrically insulating layer. The substrate also includes a second conductive region disposed on the electrically insulating layer and electrically isolated from the first conductive region. The substrate includes a third conductive region disposed on the electrically insulating layer and electrically isolated from each of the first and second conductive regions. The power module also includes a plurality of high-side power switches disposed on and electrically coupled to the first conductive region. Furthermore, the power module includes a plurality of first connectors electrically coupled between the plurality of high-side power switches and the second conductive region. The power module includes a plurality of low-side power switches disposed on and electrically coupled to the second conductive region. The power module also includes a plurality of second connectors electrically coupled between the plurality of low-side power switches and the third conductive region. Multiple high-side current paths extending from the first conductive region through the plurality of high-side power switches to the second conductive region may be substantially equal in length. Multiple low-side current paths extending from the third conductive region to the second conductive region through these multiple low-side power switches can be substantially equal in length.

[0006] In some implementations, the second conductive region may define an opening and the third conductive region may be disposed within the opening.

[0007] In some implementations, the third conductive region may have a periphery recessed from the opening to define a gap between the third conductive region and the second conductive region.

[0008] In some implementations, the plurality of second connectors may extend across the gap.

[0009] In some implementations, the first conductive region may be separated from the second conductive region by a space.

[0010] In some implementations, each of the plurality of first connectors may extend across space.

[0011] In some implementations, the source of each of the plurality of high-side power switches may be connected to the drain of each of the plurality of low-side power switches in a half-bridge configuration.

[0012] In some implementations, each of the plurality of high-side current paths may have a length that is within 15% of each other, and each of the plurality of low-side current paths may have a length that is within 15% of each other.

[0013] In some implementations, each of the plurality of high-side power switches and each of the plurality of low-side power switches may be a silicon carbide transistor.

[0014] In some embodiments, an electronic module is disclosed. The electronic module may include a substrate. The substrate may include an electrically insulating layer. Furthermore, the substrate may include a conductive layer formed on the electrically insulating layer. The conductive layer may define a first conductive region, a second conductive region, and a third conductive region, each mutually insulated from the other. The second conductive region may define an opening, and the third conductive layer may be disposed within the opening. The electronic module may also include a plurality of high-side power switches disposed on and electrically coupled to the first conductive region. Furthermore, the electronic module may include a plurality of first connectors electrically coupled between the plurality of high-side power switches and the second conductive region. The electronic module may include a plurality of low-side power switches disposed on and electrically coupled to the second conductive region. Furthermore, the electronic module may include a plurality of second connectors electrically coupled between the plurality of low-side power switches and the third conductive region.

[0015] In some implementations, the multiple high-side current paths extending from the first conductive region through the plurality of high-side power switches to the second conductive region may be substantially equal in length.

[0016] In some implementations, the multiple low-side current paths extending from the third conductive region through the multiple low-side power switches to the second conductive region may be substantially equal in length.

[0017] In some implementations, the third conductive region of the conductive layer may have a periphery recessed from the opening to define a gap between the third conductive region and the second conductive region.

[0018] In some implementations, the plurality of second connectors of the electronic module may extend across the gap.

[0019] In some implementations, the first conductive region of the electronic module may be separated from the second conductive region by a space.

[0020] In some implementations, each of the plurality of first connectors of the electronic module may extend across space.

[0021] In some implementations, the source of each of the plurality of high-side power switches of the electronic module may be connected to the drain of each of the plurality of low-side power switches in a half-bridge configuration.

[0022] In some embodiments, a method is disclosed. The method may include forming an insulating layer on a substrate. Furthermore, the method may include forming a first conductive region, a second conductive region, and a third conductive region on a top surface of the substrate. Each of the first, second, and third conductive regions may be electrically insulated from each other. The second conductive region may define an opening. The third conductive region may be disposed within the opening. Furthermore, the method may include attaching a plurality of high-side power switches to the first conductive region. The method may also involve electrically coupling a plurality of first connectors between the plurality of high-side power switches and the second conductive region. The method may include electrically coupling a plurality of low-side power switches to the second conductive region. Furthermore, the method may include electrically coupling a plurality of second connectors between the plurality of low-side power switches and the third conductive region.

[0023] In some implementations, the method may involve multiple high-side current paths of substantially equal length extending from a first conductive region through the plurality of high-side power switches to a second conductive region.

[0024] In some implementations, the method may involve multiple low-side current paths of substantially equal length extending from the third conductive region through the plurality of low-side power switches to the second conductive region. Attached Figure Description

[0025] Figure 1 This is an assembly diagram of a half-bridge power module comprising four high-side power switches connected in parallel with four low-side power switches, according to the implementation scheme disclosed herein.

[0026] Figure 2 yes Figure 1 The diagram shows the assembly of the lead frame of the power module.

[0027] Figure 3 yes Figure 1 The diagram shows an assembly of a power module, which is attached to... Figure 2 The lead frame shown;

[0028] Figure 4 yes Figures 1 to 3 The side view of the assembly diagram of the power module shown;

[0029] Figure 5 This is a flowchart of a manufacturing process that can be used to manufacture a power module according to the embodiments disclosed herein;

[0030] Figures 6A to 6C It is an assembly diagram of a standardized power module based on the implementation scheme disclosed herein; and

[0031] Figures 7A to 7B This is an assembly diagram of a power module depicting the current paths under two operating modes according to the embodiments disclosed herein. Detailed Implementation

[0032] In some implementations, the high-power DC-DC power conversion module includes multiple high-side power switches and multiple low-side power switches connected in parallel, arranged in a half-bridge configuration. The power switches are attached to a thermally conductive substrate that provides electrical paths for the power switches and provides electrical isolation between the high-side and low-side power switches. Metal clips are used to provide electrical connections between the top surfaces of the power switches and the substrate. The electrical paths and metal clips are designed to provide balanced current flow through each parallel-connected power switch, thus ensuring that each power switch has similar current flow and current path length. Balanced current flow reduces current congestion in the power switches, which can lead to increased electrical losses and reduced reliability.

[0033] The leadframe assembly forms power input, ground, and signal connections between the substrate and the module exterior. The ground lead of the leadframe assembly is positioned above the power input area of ​​the power switch and between the power input leads of the leadframe to minimize stray inductance. The module is encapsulated in a dielectric molding material to protect the power switch and hold the assembly in place. The bottom surface of the substrate is exposed, allowing it to be directly coupled to a heat sink for effective heat dissipation from the power switch.

[0034] The module has input / output pins on each of its four sides, allowing power pins to be accessed from the front and back, while signal (I / O) pins are accessed from adjacent sides such as the left and right. This enables optimal use of substrate area within a given footprint and provides the most compact module size with the lowest possible packaging cost. In some embodiments, the power switches are silicon carbide (SiC); however, in other embodiments, they may be silicon, gallium nitride (GaN), or other suitable semiconductor switches.

[0035] Figure 1 This is a semi-transparent plan view of an example power module 100 according to an embodiment of this disclosure. (See attached image.) Figure 1 As shown, the power module 100 includes a substrate 102 within a molded housing 104. Figure 1 For clarity, some components (e.g., lead frames) have been removed and will be discussed in subsequent figures. Power switches 110 are soldered (or sintered) to substrate 102. In some embodiments, power switches 110 are field-effect transistors (FETs), and they are soldered to substrate 102, thereby electrically coupling their drains to the substrate. Four low-side power switches 110-1, 110-2, 110-3, and 110-4 are connected in parallel with the drain terminals soldered to the second conductive region 144. Although Figure 1 Four low-side power switches are shown, but the power module 100 may include any number of low-side power switches, including a single low-side power switch. The four high-side power switches 110-5, 110-6, 110-7, and 110-8 are connected in parallel with the drain terminal soldered to the first conductive region 146. Although Figure 1 Four high-side power switches are shown, but the power module 100 may include any number of high-side power switches, including a single high-side power switch. The second conductive region 144 and the first conductive region 146 are conductive and electrically isolated from each other. In some embodiments, the substrate 102 may be a directly bonded copper, insulating metal substrate, or other suitable high thermal conductivity substrate.

[0036] One end of the second connector 112 is soldered to the top (source) of the power switch 110-1, and the other end of the second connector 112 is soldered to the third conductive region 142. One end of the second connector 114 is soldered to the top of the power switch 110-2, and the other end of the second connector 114 is soldered to the third conductive region 142. One end of the second connector 116 is soldered to the top of the power switch 110-3, and the other end of the second connector 116 is soldered to the third conductive region 142. One end of the second connector 118 is soldered to the top of the power switch 110-4, and the other end of the second connector 118 is soldered to the third conductive region 142.

[0037] One end of the first connector 120 is soldered to the top (source) of the power switch 110-5, and the other end of the first connector 120 is soldered to the second conductive region 144 (switch node). One end of the first connector 122 is soldered to the top (source) of the power switch 110-6, and the other end of the first connector 122 is soldered to the second conductive region 144. One end of the first connector 124 is soldered to the top (source) of the power switch 110-7, and the other end of the first connector 124 is soldered to the second conductive region 144. One end of the first connector 126 is soldered to the top (source) of the power switch 110-8, and the other end of the first connector 126 is soldered to the second conductive region 144.

[0038] The second connectors 112, 114, 116, and 118 are all of similar length, such that the current paths for current entering and leaving the low-side power switch are equal in length. The first connectors 120, 122, 124, and 126 are all of similar length, such that the current paths for current entering and leaving the high-side power switch are equal in length (discussed in detail below). Sensing conductor 130 serves as the Kelvin sensing line for power switches 110-1 to 110-4, and gate conductor 128 is used to operate the gate of the power switch. Sensing conductor 132 serves as the Kelvin sensing line for switches 110-5 to 110-8, and gate conductor 134 is used to operate the gate of the power switch. In some embodiments, the clip is attached first, followed by the sensing line. A negative thermal coefficient (NTC) thermal sensor 150 is attached to the second conductive region 144.

[0039] In some implementations, the power module 100 is configured in a half-bridge configuration; however, other suitable electrical configurations may also be used. The input voltage DC (+) is electrically coupled to the drains of all high-side power switches 110-5 to 110-8 connected in parallel. The sources of high-side power switches 110-5 to 110-9 are coupled to the drains of low-side power switches 110-1 to 110-4 to form a second conductive region 144. The sources of low-side switches 110-1 to 110-4 are coupled to ground DC (-) and are all coupled in parallel.

[0040] Figure 2 It can be formed Figure 1 The diagram shows a plan view of the lead frame 200, a portion of the power module 100. The lead frame uses a right positive power lead 220 and a left positive power lead 240 to connect the module to a DC (+) voltage. The right positive power lead 220 includes a connection to a first conductive region 146 (see [reference]). Figure 1 The left positive power lead 240 includes a contact 242 connected to the first conductive region 146. The DC (-) power supply uses the negative power lead 230 to connect to the third conductive region 142 (see [link]). Figure 1The negative power supply lead 230 has three negative power supply lead contacts 230-1, 230-2, and 230-3, which are connected to the third conductive region 142 (see [link]). Figure 1 The current flowing through the positive power leads 220 and 240 in the DC (+) direction is opposite to the current flowing through the negative power lead 230 in the DC (-) direction. The two current paths are very close, thus reducing parasitic / stray inductance. Reduced parasitic inductance improves switching characteristics. Output lead 212 is connected to the second conductive region 144. Output lead 212 is connected to the substrate using tabs 212-1 and 212-2. Tabs 250-1 to 250-8 can form input / output signal connections with the power module 100.

[0041] Figure 3 It is a semi-transparent plan view of the power module 100 with the lead frame 200 attached. Figure 3 So many components have been described, for the sake of simplicity, in Figure 1 Some of the components that have been numbered and discussed in the text are in Figure 3 There is no number in it. Figure 3 The description involves Figure 1 The component numbers are defined in the description. The assembly diagram shows positive power connections 240-2 and 220-2 connected to the first conductive region 146. Negative power lead contacts 230-1, 230-2, and 230-3 are connected to the third conductive region 142. Output lead contacts 212-5 and 212-6 are connected to the second conductive region 144. Kelvin connections are shown and connected to connectors 250-6 and 250-7, and 250-3 and 250-4. The NTC thermal sensor 150 is connected to 250-9.

[0042] Tracing the current flowing through power module 100: A positive voltage power supply drives current from the positive voltage power supply to a first conductive region 146 connected to the drain of devices 110-5, 110-6, 110-7, and 110-18. Current paths originate from two positive voltage inputs (e.g., contacts 221 and 242) to the drain of devices 110-5, 110-6, 110-7, and 110-8. All current paths may be of equal length or of the same distance. Equal distance means that the parasitic impedance is the same for all paths. Equal impedance means that the current will be the same. As defined herein, equal distance or substantially equal distance means that the length of each current path deviates from the length of other current paths by within 0.1 mm, 0.5 mm, 1 mm, or 2 mm. Current flows through devices 110-5, 110-6, 110-7, and 110-8, and the source of each device is connected to the second conductive region 144 via first connectors 120, 122, 124, and 126. Each of the first connectors 120, 122, 124, and 126 has the same length, ensuring that the current through each device is identical. The second conductive region 144 conducts current to the drains of power devices 110-1, 110-2, 110-3, and 110-4. Current flows through devices 110-1, 110-2, 110-3, and 110-4 and is conducted through second connectors 112, 114, 116, and 118, and is electrically coupled to the third conductive region 142. Since the current path lengths through the power devices and conductor clamps are all equal, the parasitic impedances will also be equal. Thus, the current across the devices will be equal. In other words, multiple switches connected to multiple clips generate multiple currents, and the physical current paths (or multiple current paths) of these multiple currents are equal. The third conductive region 142 is connected to the negative power supply connections 230-1, 230-2, and 230-3. The current returning to the negative power supply can flow through the current originating from the positive power supply, thereby canceling some of the magnetic properties of the interconnection and producing a lower parasitic inductance.

[0043] Figure 4 This is a semi-transparent side view of the power module 100. (Example) Figure 4 As shown, dielectric mold material 104 partially encapsulates substrate 102, exposing the bottom surface of the substrate. Negative power lead 230 is shown coupled to substrate 102 and extends above a high-side power switch (e.g., 110-5). Right positive power lead 220 is shown connected to substrate 102. Output lead 212 is shown attached to substrate 102.

[0044] The power module 100 is shown attached to the heat sink 405. The power module 100 is thermally coupled to the heat sink 405 at the bottom surface of the substrate 102. The substrate 102 can be thermally coupled to the heat sink 405 using solder, sintered silver bonding, thermal interface materials, or other suitable coupling materials.

[0045] Figure 5 This is a flowchart of an example manufacturing process 500 that can be used to manufacture a power module 100 according to an embodiment of the present disclosure. The process begins with die attachment 504, whereby the switch is attached to the substrate via soldering, sintering, or other suitable processes. In step 506, a solder dispensing process is performed, followed by placement of the lead frame and clips. In step 508, solder is reflowed to solder the clips and lead frame into place. In step 510, the module forms a Kelvin connection via wire bonding. In step 512, the module is encapsulated with a dielectric die material. In step 514, the leads are trimmed and shaped. Various other processes can be performed, including cleaning, etc. For example, in some embodiments, the clips and / or lead frames can be soldered, brazed, glued, or attached using processes other than soldering.

[0046] Figures 6A to 6C A standardized power module 600 is shown, which can be configured differently to minimize cost and enable a variety of products. Power module 600 can be or include any component, feature, or characteristic of any power module previously described. Figure 6A A standardized power module with a reduced-size substrate and two high-side power switches and two low-side power switches is shown. This standardized power module can be designed to reduce current and lower cost. Figure 6B A standardized power module with a full-size substrate and two high-side power switches and two low-side power switches is shown. Figure 6B The standardized modules in [the system] can be used with [other systems]. Figure 6A The module uses the same lead frame and packaging device, but may have improved thermal performance due to the larger substrate. Figure 6C A standardized power module with a full-size substrate and four high-side power switches and four low-side power switches is shown. Figure 6C The modules in can be used with Figure 6A and Figure 6B The module uses the same lead frame and package, but may have improved current capability due to the increased number of power switches. Other variations are also within the scope of this disclosure.

[0047] Figures 7A to 7B It is a simplified diagram depicting the current path in various operating modes of the power module 600. Figure 7A The power module 600 is depicted operating in a first "high-side" operating mode. The power module 600 may include a substrate 755 within a molded housing. Figure 7AIn this diagram, for clarity, some components (e.g., lead frames) have been removed and discussed in previous figures. The substrate 755 may include an electrically insulating layer 760 made of ceramic, polymer, or other electrically insulating material. A conductive layer 765 may be formed on the electrically insulating layer 760 and defines a first conductive region 146, a second conductive region 144, and a third conductive region 142, each electrically insulating from the others. The second conductive region 144 defines an opening 770, and the third conductive region 142 is disposed within this opening.

[0048] The third conductive region 142 has a periphery 775 recessed from the opening 770 to define a gap 780 between the third conductive region and the second conductive region 144. The first conductive region 146 is separated from the second conductive region 144 by a space 785.

[0049] Power switch 110 is soldered (or sintered) to the substrate. In some embodiments, the power switch is soldered to the substrate by electrically coupling its drain to the substrate. Two low-side power switches 110-1 and 110-2 are connected in parallel with the drain terminals soldered to the second conductive region 144. Although Figure 7A Two low-side power switches are shown, but the power module 600 may include any number of low-side power switches, including a single low-side power switch. The two high-side power switches 110-3 and 110-4 are connected in parallel with the drain terminal attached to the first conductive region 146. Although Figure 7A Two high-side power switches are shown, but the power module may include any number of high-side power switches, including a single high-side power switch. The second conductive region 144 and the first conductive region 146 are conductive and electrically isolated from each other by an insulating substrate, which may be made of ceramic. In some embodiments, the substrate may be directly bonded copper, an insulating metal substrate, or other suitable high thermal conductivity substrate. In a first operating mode, the two high-side power switches 110-3 and 110-4 may be in a 'conducting' state, while the two low-side power switches 110-1 and 110-2 may be in a 'disconnecting' state.

[0050] One end of the first connector 120 can be soldered to the top (source) of the power switch 110-4, and the second end of the first connector 120 can be soldered to the second conductive region 144 (switch node). One end of the first connector 122 can be soldered to the top (source) of the power switch 110-3, and the second end of the first connector 122 can be soldered to the second conductive region 144. Each of the first connectors 120 and 122 can be a conductive clip. The first connectors 120 and 122 can all have the same or similar length, such that the current paths for current to enter and exit the high-side power switches 110-3 and 110-4 are equal in length. In some embodiments, the connectors can be made of a conductive metal such as copper or a copper-based alloy.

[0051] In some implementations, the power module 600 is configured in a half-bridge configuration; however, other suitable electrical configurations may also be used. The input DC voltage (e.g., via the positive terminal, such as...) Figure 2 The positive power leads 220 and 240 shown can be electrically coupled to the drain of the high-side power switches 110-3 and 110-4, which can be connected in parallel. The sources of the high-side power switches 110-3 and 110-4 can be electrically coupled to the drain of the low-side power switches 110-2 and 110-1 to form a second conductive region 144. The sources of the low-side power switches 110-2 and 110-1 can be coupled to ground (e.g., via the negative terminal, such as...). Figure 2 The negative power supply lead 230 shown can be connected in parallel.

[0052] When the power module 600 is in the first "high-side" operating mode, the first parallel current path 720A and the second parallel current path 720B can be formed through the power module 600. Each of the first current path 720A and the second current path 720B can originate from the positive terminal (e.g., Figure 2 The positive power supply lead shown is 220 or 240 and may terminate at an output terminal (e.g., Figure 2 The output lead 212 is shown. The first path 720A may begin in the lower left portion of the first conductive region 146 and lead to the drain of the power switch 110-4. The first path 720A may continue from the drain of the power switch 110-4 to the source and through the first connector 120 into the second conductive region 144. The first path 720A may continue through the second conductive region 144 until the first path terminates at the upper left corner of the second conductive region 144, where the second conductive region 144 is adjacent to the output terminal (e.g., ...). Figure 2 The output lead 212 shown is an electrical contact.

[0053] The second path 720B may begin in the lower right portion of the first conductive region 146 and lead to the drain of the power switch 110-3. The second path 720B may extend from the drain of the power switch 110-3 to the source and pass through the first connector 122 into the second conductive region 144. The second path 720B may continue through the second conductive region 144 until the first path terminates at the upper right corner of the second conductive region 144, where the second conductive region 144 is adjacent to the output terminal (e.g., ...). Figure 2 The output lead 212 shown is an electrical contact. Figure 7AAs shown, the first path 720A and the second path 720B can be of equal length and can contribute to current balance in the power module 600 during the first operating mode. More specifically, the first path 720A and the second path 720B can each have substantially the same path length between a common Vin position 725 and a common Vout position 730. As defined herein, substantially the same path lengths deviate from each other within 15%, 10%, 7%, 5%, or 2%. As described herein, substantially the same or equal path lengths enable equal current sharing and equal switching performance between semiconductor switches, resulting in reduced electrical losses and improved reliability.

[0054] Figure 7B The diagram depicts the power module 600 operating in a second "low-side" operating mode. Two low-side power switches 110-1 and 110-2 are connected in parallel with the drain terminals soldered to the second conductive region 144. Although Figure 7B Two low-side power switches are shown, but the power module 600 may include any number of low-side power switches, including a single low-side power switch. The second conductive region 144 and the first conductive region 146 are conductive and electrically isolated from each other. In the second "low-side" operating mode, the two high-side power switches 110-3 and 110-4 may be in the "off" state, while the two low-side power switches 110-1 and 110-2 may be in the "on" state.

[0055] One end of the second connector 112 can be soldered to the top (source) of the power switch 110-2, and the second end of the second connector 112 can be soldered to the third conductive region 142. One end of the second connector 114 can be soldered to the top (source) of the power switch 110-1, and the second end of the second connector 114 can be soldered to the third conductive region 142. Each of the second connectors 112 and 114 can be a conductive clip. The second connectors 112 and 114 can all have the same or similar length, such that the current paths for current to enter and exit the low-side power switches 110-1 and 110-2 are equal in length.

[0056] When the power module 600 is in the second "low-side" operating mode, the third current path 750A and the fourth current path 750B can be formed through the power module 600, respectively. Each of the two paths can originate from the output terminals (e.g., Figure 2 The output lead 212 shown may terminate at a ground terminal (e.g., Figure 2The negative power supply lead 230 is shown. The third current path 750A can begin at the ground region of the substrate (e.g., the third conductive region 142), pass through the connector to the source of switch 110-2, and then to the Vin region of the substrate. The fourth current path 750B can begin at the ground region of the substrate (e.g., the third conductive region 142), pass through the connector to the source of switch 110-1, and then to the Vin region of the substrate. (See diagram 230). Figure 7B As shown, the third current path 750A and the fourth current path 750B may be of equal length and may contribute to current balance in the power module 600 during the second operating mode. More specifically, the third current path 750A and the fourth current path 750B may each have substantially the same or substantially equal path lengths between the common ground location 740 and the common Vout location 730. As defined herein, substantially the same path lengths deviate from each other within 15%, 10%, 7%, 5%, or 2%.

[0057] In some embodiments, the switches and / or diodes may be fabricated using gallium nitride (GaN), silicon carbide (SiC), and / or silicon. In various embodiments, one or more switches may be field-effect switches, including but not limited to enhancement-mode switches and depletion-mode switches.

[0058] Those skilled in the art will understand that various features and aspects of a power supply module with balanced current can be changed, modified, and manipulated within the scope of this disclosure.

[0059] In the foregoing description, numerous specific details have been described with reference to embodiments of this disclosure, which may vary depending on the specific implementation. Therefore, the description and drawings should be considered illustrative rather than restrictive. The unique and exclusive indication of the scope of this disclosure, and what the applicant wishes to define as the scope of this disclosure, is the literal and equivalent scope of the claims published in this application, taking the specific form published by those claims, including any subsequent amendments. Specific details of particular embodiments may be combined in any suitable manner without departing from the spirit and scope of embodiments of this disclosure.

[0060] Furthermore, spatially relative terms (such as "bottom" or "top") may be used to describe the relationship of one element and / or feature to another element and / or feature, for example, as shown in the figure. It should be understood that spatially relative terms are intended to cover different orientations of the switch in use and / or operation than those depicted in the figure. For example, if the switch in the figure is flipped, the element described as the "bottom" surface may then be oriented "above" other elements or features. The switch may be oriented in other ways (e.g., rotated 90 degrees or otherwise) and may be interpreted accordingly by the spatially relative descriptors used herein.

[0061] As used herein, the terms “and,” “or,” and “and / or” can have a variety of meanings, which are also expected to depend at least in part on the context in which the terms are used. Generally, “or,” when used in a list of associations (such as A, B, or C), is intended to mean A, B, and C (used herein in an inclusive sense) and A, B, or C (used herein in an exclusive sense). Furthermore, the term “one or more” as used herein can be used to describe any feature, structure, or property in the singular form, or can be used to describe some combination of features, structures, or properties. However, it should be noted that this is merely an illustrative example and the claimed subject matter is not limited to this example. Additionally, the term “at least one,” when used in a list of associations (such as A, B, or C), can be interpreted to mean any combination of A, B, and / or C, such as A, B, C, AB, AC, BC, AA, AAB, ABC, AABBCCC, etc.

[0062] Throughout this specification, references to “an example,” “example,” “some examples,” or “exemplary embodiment” mean that a particular feature, structure, or characteristic described in conjunction with a feature and / or example may be included in at least one feature and / or example of the claimed subject matter. Therefore, the phrases “in an example,” “example,” “in some examples,” “in some embodiments,” or other similar phrases appearing throughout this specification do not necessarily refer to the same feature, example, and / or limitation. Furthermore, a particular feature, structure, or characteristic may be combined into one or more examples and / or features.

[0063] In the foregoing detailed description, numerous specific details have been set forth to provide a thorough understanding of the claimed subject matter. However, those skilled in the art will understand that the claimed subject matter can be practiced without these specific details. In other instances, methods and apparatus known to those of ordinary skill in the art have not been described in detail to avoid obscuring the claimed subject matter. Therefore, the claimed subject matter is not limited to the specific examples disclosed, but rather includes all aspects falling within the scope of the appended claims and their equivalents.

Claims

1. A power module comprising: a substrate comprising: an electrically insulating layer; a first conductive region disposed on the electrically insulating layer; a second conductive region disposed on the electrically insulating layer and electrically isolated from the first conductive region; and a third conductive region disposed on the electrically insulating layer and electrically isolated from each of the first conductive region and the second conductive region; a plurality of high-side power switches disposed on and electrically coupled to the first conductive region; a plurality of first connectors electrically coupled between the plurality of high-side power switches and the second conductive region; a plurality of low-side power switches disposed on and electrically coupled to the second conductive region; a plurality of second connectors electrically coupled between the plurality of low-side power switches and the third conductive region; wherein a plurality of high-side current paths extending from the first conductive region through the plurality of high-side power switches to the second conductive region are substantially equal in length; and wherein a plurality of low-side current paths extending from the third conductive region through the plurality of low-side power switches to the second conductive region are substantially equal in length.

2. The power module of claim 1, wherein the second conductive region defines an opening and wherein the third conductive region is disposed within the opening.

3. The power module of claim 2, wherein the third conductive region has a perimeter that is recessed from the opening to define a gap between the third conductive region and the second conductive region.

4. The power module of claim 3, wherein each of the plurality of second connectors extends across the gap.

5. The power module of claim 1, wherein the first conductive region is spaced apart from the second conductive region by a space.

6. The power module of claim 5, wherein each of the plurality of first connectors extends across the space.

7. The power module of claim 1, wherein a source of each of the plurality of high-side power switches is connected to a drain of each of the plurality of low-side power switches in a half-bridge configuration.

8. The power module of claim 1, wherein each of the plurality of high-side current paths has a length that is within 15% of each other, and wherein each of the plurality of low-side current paths has a length that is within 15% of each other.

9. The power module of claim 1, wherein each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor.

10. An electronic module comprising: a substrate comprising: an electrically insulating layer; and a conductive layer formed on the electrically insulating layer and defining a first conductive region, a second conductive region, and a third conductive region each electrically isolated from each other, wherein the second conductive region defines an opening, and wherein the third conductive region is disposed within the opening; a plurality of high-side power switches disposed on and electrically coupled to the first conductive region; a plurality of first connectors electrically coupled between the plurality of high-side power switches and the second conductive region; a plurality of low-side power switches disposed on and electrically coupled to the second conductive region; and a plurality of second connectors electrically coupled between the plurality of low-side power switches and the third conductive region.

11. The electronic module of claim 10, wherein a plurality of high-side current paths extending from the first conductive region through the plurality of high-side power switches to the second conductive region are substantially equal in length.

12. The electronic module of claim 10, wherein a plurality of low-side current paths extending from the third conductive region through the plurality of low-side power switches to the second conductive region are substantially equal in length.

13. The electronic module of claim 10, wherein the third conductive region is defined by a perimeter that is recessed from the opening to define a gap between the third conductive region and the second conductive region.

14. The electronic module of claim 13, wherein each of the plurality of second connectors extends across the gap.

15. The electronic module of claim 10, wherein the first conductive region is spaced apart from the second conductive region by a space.

16. The electronic module of claim 15, wherein each of the plurality of first connectors extends across the space.

17. The electronic module of claim 10, wherein a source of each of the plurality of high-side power switches is connected to a drain of each of the plurality of low-side power switches in a half-bridge configuration.

18. A method of forming an electronic module, the method comprising: forming an insulating layer of a substrate; forming a first conductive region, a second conductive region, and a third conductive region on a top surface of the substrate, wherein each of the first conductive region, the second conductive region, and the third conductive region are each electrically isolated from one another, wherein the second conductive region defines an opening, and wherein the third conductive region is disposed within the opening; attaching a plurality of high-side power switches to the first conductive region; electrically coupling a plurality of first connectors between the plurality of high-side power switches and the second conductive region; electrically coupling a plurality of low-side power switches to the second conductive region; and electrically coupling a plurality of second connectors between the plurality of low-side power switches and the third conductive region.

19. The method of claim 18, wherein a plurality of high-side current paths extending from the first conductive region through the plurality of high-side power switches to the second conductive region are substantially equal in length.

20. The method of claim 18, wherein a plurality of low-side current paths extending from the third conductive region through the plurality of low-side power switches to the second conductive region are substantially equal in length.

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