Reaction chamber structure and deposition equipment

Abstract

The embodiments of the present disclosure relate to the field of semiconductor manufacturing, and provide a reaction chamber structure and deposition equipment, wherein the reaction chamber structure includes a reaction chamber body, an air inlet mechanism, an air extraction port, a movable carrier, a curing mechanism and a controller. The reaction chamber includes a deposition chamber and a curing chamber connected in the vertical direction, and the movable carrier can move up and down in the vertical direction in the reaction chamber so that a wafer is placed in the deposition chamber to deposit a film layer on the surface of the wafer, or the wafer is placed in the curing chamber. The curing mechanism is located in the curing chamber, and the curing mechanism is used to provide curing energy to the film layer while the wafer is placed in the curing chamber, so as to convert the film layer into a target material layer. The controller is connected to the movable carrier and the curing mechanism, and is used to control the movable carrier to move in the vertical direction, and is also used to control the curing mechanism to provide curing energy to the film layer. The embodiments of the present disclosure can at least improve the efficiency and reliability of preparing the target material layer.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor manufacturing, and in particular to a reaction chamber structure and deposition equipment. Background Art

[0002] In the semiconductor industry, as the requirements for device integration become increasingly higher, the size of devices continues to decrease in order to increase the integration density of various electronic components (for example, transistors, diodes, resistors, capacitors, etc.). Therefore, semiconductor devices need to have a high aspect ratio structure, and insulating materials can be used to fill the gaps between high aspect ratio structures. Among them, flowable chemical vapor deposition (FCVD) is a preparation method for materials suitable for filling high aspect ratio structures. It can form a film layer with relatively good fluidity on the wafer, and then use a curing mechanism to provide curing energy to convert the film layer on the wafer surface into a target material layer. Since the target material layer prepared by FCVD exhibits good conformality, step coverage and the ability to fully fill high aspect ratio spaces, FCVD can be used to fill high aspect ratio gaps in semiconductor devices.

[0003] However, the efficiency and reliability of the deposition equipment currently used in FCVD for preparing target material layers need to be improved. Summary of the Invention

[0004] The embodiments of the present disclosure provide a reaction chamber structure and deposition equipment, which can at least improve the efficiency and reliability of preparing a target material layer.

[0005] According to some embodiments of the present disclosure, on the one hand, embodiments of the present disclosure provide a reaction chamber structure, comprising: a reaction chamber body, wherein the reaction chamber body includes a reaction chamber, and the reaction chamber includes a deposition chamber and a curing chamber connected in a vertical direction; an air intake mechanism, wherein the air intake mechanism is arranged at the top of the reaction chamber, the air intake mechanism has an air inlet and an air inlet channel connected to the air inlet, the air inlet channel is connected to the reaction chamber, and the air inlet is used to connect to an air inlet pipe for providing gas; an air suction port, wherein the air suction port is connected to the reaction chamber; a movable carrier, wherein the movable carrier is used to carry a wafer, and the movable carrier can move up and down along the vertical direction in the reaction chamber, so that the wafer is placed in the deposition chamber to be A film layer is deposited on the surface of the wafer, or the wafer is placed in the curing chamber; a curing mechanism is located in the curing chamber, and the curing mechanism is used to provide curing energy to the film layer while the wafer is placed in the curing chamber, so as to convert the film layer into a target material layer; a controller is connected to the movable stage and the curing mechanism, and is used to control the movable stage to move in the vertical direction so that the wafer is placed in the deposition chamber to deposit a film layer on the wafer surface, and is also used to control the movable stage to move in the vertical direction after depositing the film layer so that the wafer is placed in the curing chamber, and to control the curing mechanism to provide curing energy to the film layer.

[0006] In some embodiments, the curing mechanism is circumferentially disposed within the curing chamber, or the curing mechanism includes a plurality of curers, and the curers are circumferentially arranged within the curing chamber.

[0007] In some embodiments, the controller controls the movable stage to move alternately in the deposition chamber and the curing chamber, so that the wafer is alternately placed in the deposition chamber or the curing chamber.

[0008] In some embodiments, the curing mechanism is vertically arranged on a side wall of the curing chamber.

[0009] In some embodiments, the reaction chamber structure further includes: a baffle, which is located at the top of the curing mechanism, and is retractable in the horizontal direction. The baffle is connected to the controller. During the deposition of the film layer, the controller is used to control the baffle to stretch so that the baffle blocks the passage between the deposition chamber and the curing chamber. After the film layer is deposited, the controller is used to control the baffle to shrink so that the baffle does not block the movable carrier from moving in the vertical direction.

[0010] In some embodiments, the reaction chamber structure also includes: a baffle, which is located at the top of the curing mechanism; a first telescopic mechanism, which is arranged on the side wall of the curing chamber, and the first telescopic mechanism is telescopic in the horizontal direction, and the first telescopic mechanism is connected to the baffle, used to drive the baffle to move, and the first telescopic mechanism is connected to the controller. During the deposition of the film layer, the controller controls the first telescopic mechanism to stretch, and the first telescopic mechanism drives the baffle to move, and the baffle is used to block the passage between the deposition chamber and the curing chamber. After the film layer is deposited, the controller controls the first telescopic mechanism to contract, and the first telescopic mechanism drives the baffle to move, so that the baffle does not block the movable carrier from moving in the vertical direction.

[0011] In some embodiments, the curing mechanism is a light source curing mechanism, which is used to provide a light beam to provide the curing energy to the film layer. The side of the baffle facing away from the air intake mechanism is a reflective surface. During the period when the light source curing mechanism provides the curing energy, the reflective surface is used to reflect the light beam.

[0012] In some embodiments, the curing mechanism includes at least one movable curing device; the reaction chamber structure also includes: a second telescopic mechanism, the second telescopic mechanism is arranged on the side wall of the curing chamber, the second telescopic mechanism is connected to the movable curing device, and the second telescopic mechanism is connected to the controller. When the movable carrier is located in the curing chamber, the controller controls the second telescopic mechanism to stretch, drive the movable curing device to move, so that the movable curing device is located directly above the wafer, and the controller controls the movable curing device to provide the curing energy. After curing the film layer, the controller controls the movable curing device to stop providing the curing energy, and the controller controls the second telescopic mechanism to contract, drive the movable curing device away from directly above the wafer, so that the movable curing device does not block the movable carrier from moving in the vertical direction; wherein, the cross-sectional area of ​​the curing chamber perpendicular to the vertical direction is equal to or greater than the cross-sectional area of ​​the deposition chamber perpendicular to the vertical direction.

[0013] In some embodiments, the curing mechanism includes at least one rotatable curing device; the reaction chamber structure also includes: a rotating fixed part, the rotating fixed part is located in the curing chamber, and the rotatable curing device is rotatably connected to the rotating fixed part; wherein, the controller is connected to the rotatable curing device, when the movable carrier is located in the curing chamber, the controller controls the rotatable curing device to rotate around the rotating fixed part to be parallel to the horizontal direction, so that at least part of the rotatable curing device is located directly above the wafer, and the controller controls the rotatable curing device to provide the curing energy, after curing the film layer, the controller controls the rotatable curing device to stop providing the curing energy, and the controller controls the rotatable curing device to rotate around the rotating fixed part to be parallel to the vertical direction, so that the rotatable curing device fits the side wall of the curing chamber.

[0014] According to some embodiments of the present disclosure, another aspect of the present disclosure further provides a deposition device, comprising the reaction chamber structure described in any of the above embodiments.

[0015] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0016] The technical solution of the reaction chamber structure provided in the embodiment of the present disclosure includes a reaction chamber body, an air inlet mechanism, an air extraction port, a movable carrier, a curing mechanism and a controller. The reaction chamber body includes a reaction chamber, and the reaction chamber includes a deposition chamber and a curing chamber connected in the vertical direction. The air inlet mechanism is arranged at the top of the reaction chamber, and the air inlet mechanism has an air inlet hole and an air inlet channel connected to the air inlet hole. The air inlet channel is connected to the reaction chamber, and the air inlet hole is used to connect to the air inlet pipe for providing gas. The air extraction port is connected to the reaction chamber. The movable carrier is used to carry the wafer, and the movable carrier can move up and down in the vertical direction in the reaction chamber, so that the wafer is placed in the deposition chamber to deposit a film layer on the surface of the wafer, or the wafer is placed in the curing chamber. The curing mechanism is located in the curing chamber, and the curing mechanism is used to provide curing energy to the film layer while the wafer is placed in the curing chamber, so as to convert the film layer into a target material layer. The controller is connected to the movable stage and the curing mechanism, and is used to control the movable stage to move in the vertical direction so that the wafer is placed in the deposition chamber to deposit a film layer on the wafer surface. It is also used to control the movable stage to move in the vertical direction after the film layer is deposited so that the wafer is placed in the curing chamber, and control the curing mechanism to provide curing energy for the film layer. In this reaction chamber structure, the deposition chamber and the curing chamber are located in the same reaction chamber. After the film layer deposition is completed, the movable stage can be moved in the vertical direction to move the wafer to the curing chamber, providing curing energy for the film layer to convert it into a target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art. On the one hand, a lot of time can be saved, thereby improving the preparation efficiency of the target material layer. On the other hand, it can also avoid the increase of defects due to the movement of the wafer between different chambers, thereby improving the reliability of the preparation of the target material layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 A schematic diagram of a deposition chamber structure in related art;

[0019] Figure 2 A schematic diagram of a curing cavity structure in related art;

[0020] Figure 3A schematic diagram of a reaction chamber structure in related art;

[0021] Figure 4 A schematic cross-sectional view of a first reaction chamber structure provided in some embodiments of the present disclosure, wherein the movable stage is located within the deposition chamber;

[0022] Figure 5 A schematic cross-sectional view of a first reaction chamber structure provided in some embodiments of the present disclosure, wherein the movable carrier is located within the curing chamber;

[0023] Figure 6 A schematic cross-sectional view of an air intake mechanism provided in some embodiments of the present disclosure;

[0024] Figure 7 A schematic top view of the curing mechanism and movable platform provided in some embodiments of the present disclosure;

[0025] Figure 8 Another schematic top view of the curing mechanism and the movable stage provided in some embodiments of the present disclosure;

[0026] Figure 9 A schematic cross-sectional view of a second reaction chamber structure provided in some embodiments of the present disclosure, wherein the baffle is in a retracted state;

[0027] Figure 10 A schematic cross-sectional view of a baffle in a stretched state in a second reaction chamber structure provided in some embodiments of the present disclosure;

[0028] Figure 11 A schematic cross-sectional view of a second reaction chamber structure provided in some embodiments of the present disclosure, wherein the movable carrier is located within the curing chamber;

[0029] Figure 12 A schematic cross-sectional view of a first telescopic mechanism in a contracted state in a third reaction chamber structure provided in some embodiments of the present disclosure;

[0030] Figure 13 A schematic cross-sectional view of a first telescopic mechanism in a stretched state in a third reaction chamber structure provided in some embodiments of the present disclosure;

[0031] Figure 14 A schematic cross-sectional view of a third reaction chamber structure provided in some embodiments of the present disclosure, in which a movable carrier is located within a curing chamber;

[0032] Figure 15 A schematic cross-sectional view of the second telescopic mechanism in a contracted state in the first reaction chamber structure provided in other embodiments of the present disclosure;

[0033] Figure 16A schematic cross-sectional view of the second telescopic mechanism in a stretched state in the first reaction chamber structure provided in other embodiments of the present disclosure;

[0034] Figure 17 A schematic cross-sectional view of a second telescopic mechanism in a retracted state in a second reaction chamber structure provided in other embodiments of the present disclosure;

[0035] Figure 18 A schematic cross-sectional view of a retractable solidifier in a reaction chamber structure in some embodiments of the present disclosure in a retracted state;

[0036] Figure 19 A schematic cross-sectional view of a retractable solidifier in a stretched state in a reaction chamber structure provided by some other embodiments of the present disclosure;

[0037] Figure 20 A schematic diagram of a cross-sectional structure of a reaction chamber structure provided in some further embodiments of the present disclosure, wherein a rotatable solidifier is parallel to the vertical direction;

[0038] Figure 21 This is a schematic diagram of a cross-sectional structure in which a rotatable solidifier is parallel to the horizontal direction in a reaction chamber structure provided in some further embodiments of the present disclosure. DETAILED DESCRIPTION

[0039] Figure 1 A schematic diagram of a deposition chamber structure in related art is shown in FIG. Figure 2 This is a structural diagram of a curing cavity structure in related technology.

[0040] Combined with reference Figure 1 and Figure 2 The reaction chamber structure in the related art includes a deposition chamber structure 100 and a curing chamber structure 101. The deposition chamber structure 100 includes a deposition chamber 110, a first vacuum transfer chamber 120, a first loading chamber 130, and a first wafer boat 140 for placing the wafer 11; the curing chamber structure 101 includes a curing chamber 111, a second vacuum transfer chamber 121, a second loading chamber 131, and a second wafer boat 141 for placing the wafer 11. After the film layer is deposited on the wafer 11 in the deposition chamber 110, the wafer 11 needs to pass through the first vacuum transfer chamber 120, the first loading chamber 130, the first wafer boat 140, the second wafer boat 141, the second loading chamber 131, and the second vacuum transfer chamber 121 in sequence and then be moved to the curing chamber 111, so that the film layer on the surface of the wafer 11 can receive curing energy in the curing chamber 111 and be converted into a target material layer.

[0041] In this reaction chamber structure, the deposition chamber 110 and the curing chamber 111 are located on two platforms. After the wafer 11 deposits the film layer in the deposition chamber 110, it will waste a lot of time to move through other chambers to the curing chamber 111, making the efficiency of preparing the target material layer on the surface of the wafer 11 low.

[0042] Figure 3 It is a structural schematic diagram of a reaction chamber structure in related technology.

[0043] refer to Figure 3 The reaction chamber structure in the related art includes a deposition chamber 200, a vacuum transfer chamber 201, a curing chamber 202, a loading chamber 203, and a wafer boat 204 for placing the wafer 11. After the wafer 11 is deposited in the deposition chamber 200 to deposit a film layer on the surface of the wafer 11, the wafer 11 needs to pass through the vacuum transfer chamber 201 and move to the curing chamber 202 so that the film layer on the surface of the wafer 11 can receive curing energy in the curing chamber 202 and be converted into a target material layer.

[0044] In this reaction chamber structure, although the deposition chamber 200 and the curing chamber 202 are located on the same platform, after the film layer is deposited in the deposition chamber 200, the wafer 11 still needs to be moved to the curing chamber 202. A lot of time will be wasted during the movement, making the efficiency of preparing the target material layer on the surface of the wafer 11 low.

[0045] In summary, in the current reaction chamber structure of related technologies, the deposition chamber and the curing chamber are two independent chambers. After depositing the film layer in the deposition chamber, the wafer needs to be moved to another chamber so that the film layer can receive curing energy and be converted into the target material layer. This movement consumes a lot of time, resulting in a low efficiency in preparing the target material layer on the wafer surface. In addition, the movement of the wafer between different chambers may increase defects in the wafer and / or the target material layer, reducing the reliability of preparing the target material layer.

[0046] Therefore, the efficiency and reliability of the target material layer prepared by the reaction chamber structure in the related art need to be improved.

[0047] In the reaction chamber structure provided in the embodiment of the present disclosure, the deposition chamber and the curing chamber are located in the same reaction chamber. After the film deposition is completed, the movable stage can be moved in the vertical direction to move the wafer into the curing chamber to provide curing energy for the film layer to convert it into a target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related technology. On the one hand, a lot of time can be saved, thereby improving the preparation efficiency of the target material layer. On the other hand, it can also avoid the increase of defects due to the movement of the wafer between different chambers, thereby improving the reliability of the preparation of the target material layer.

[0048] The following describes various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the various embodiments of the present disclosure to facilitate a better understanding of the present disclosure. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can still be implemented.

[0049] Figure 4 A schematic cross-sectional view of a first reaction chamber structure in which a movable stage is located within a deposition chamber, provided in some embodiments of the present disclosure. Figure 5 A schematic cross-sectional structure diagram of a movable carrier located in a curing chamber in a first reaction chamber structure provided in some embodiments of the present disclosure.

[0050] Combined with reference Figure 4 and Figure 5 The reaction chamber structure includes: a reaction chamber body 300, an air intake mechanism 301, an air extraction port 302, a movable stage 303, a curing mechanism 304, and a controller (not shown). The reaction chamber body 300 includes a reaction chamber 310, and the reaction chamber 310 includes a deposition chamber 320 and a curing chamber 330 connected in the vertical direction Y. The air intake mechanism 301 is arranged at the top of the reaction chamber 310. The air intake mechanism 301 has an air inlet 311 and an air inlet channel 321 connected to the air inlet 311. The air inlet channel 321 is connected to the reaction chamber 310, and the air inlet 311 is used to connect to the air inlet pipe for providing gas. The air extraction port 302 is connected to the reaction chamber 310. The movable stage 303 is used to support the wafer 11 and can move up and down in the vertical direction Y within the reaction chamber 310 to place the wafer 11 in the deposition chamber 320 to deposit a film layer on the surface of the wafer 11, or to place the wafer 11 in the curing chamber 330. The curing mechanism 304 is located in the curing chamber 330 and is used to provide curing energy to the film layer while the wafer 11 is in the curing chamber 330, thereby converting the film layer into a target material layer. The controller is connected to the movable stage 303 and the curing mechanism 304 and is used to control the movable stage 303 to move in the vertical direction Y to place the wafer 11 in the deposition chamber 320 to deposit a film layer on the surface of the wafer 11. It is also used to control the movable stage 303 to move in the vertical direction Y after the film layer is deposited to place the wafer 11 in the curing chamber 330 and control the curing mechanism 304 to provide curing energy to the film layer.

[0051] The reaction chamber structure is used to generate a target material layer on the surface of the wafer 11 . Specifically, the reaction chamber body 300 is used to generate a target material layer on the surface of the wafer 11 .

[0052] Wafer 11 may be a silicon wafer, a germanium wafer, or a silicon-germanium wafer. Wafer 11 may have trenches with a high aspect ratio (aspect ratio greater than 8:1), with the trench opening narrower than 20 nm; alternatively, wafer 11 may have trenches with an aspect ratio less than or equal to 8:1, with the trench opening greater than or equal to 20 nm; alternatively, wafer 11 may have a smooth surface (i.e., without trenches).

[0053] The film layer is a thin film with good fluidity. After the film layer is deposited, it needs to be solidified to make it densified and transformed into the target material layer.

[0054] For example, when growing a fluid silicon oxide film, the precursors for the film can be TSA (Trisilylamine) and NH3 (ammonia), and the curing gas can be a gaseous source containing oxygen atoms, such as O3 or O2. Another example is when growing a normal stress silicon nitride film, the reaction gases can include SiH4, N2, NH3, etc., and the curing gas can be an inert gas such as He or Ar.

[0055] The target material layer can be silicon oxide, or materials with a dielectric constant greater than 3.9 such as silicon nitride and silicon oxynitride, or materials with a dielectric constant less than 3.9 such as fluorine-doped silicon dioxide, carbon-doped silicon dioxide, and fluorocarbon compounds.

[0056] The deposition chamber 320 is used to provide a reaction space for depositing a film layer on the surface of the wafer 11 .

[0057] The curing chamber 330 is used to provide a reaction space for the film layer to receive curing energy and convert it into a target material layer.

[0058] The gas inlet mechanism 301 is used to provide gas to the reaction chamber 310 .

[0059] The gas can be one or more of a reaction gas, a cleaning gas, or a curing gas. The reaction gas reacts on the surface of the wafer 11 to form a film layer; the curing gas is the gas required for the film layer to receive curing energy and transform into the target material layer; and the cleaning gas is used to clean byproducts from the sidewalls of the reaction chamber structure.

[0060] In one example, the reaction gas may include H2N(SiH3), HN(SiH3)2, N(SiH3)3, HMDSO(C6H 18 Si2O, hexamethyldisiloxane) or other gases containing SiH3 groups, the reaction gas may also include at least one of NH3, N2H4, N2, H2, the reaction gas may also include other gases with NH- groups or NH2- groups, the curing gas may include oxygen-containing gases such as O3, O2, H2O, N2O, NO2, etc., and the curing gas may also be an inert gas such as He, Ar, etc.

[0061] It is understandable that the parameters such as the composition and content of the reaction gas, cleaning gas and curing gas can be adjusted according to actual conditions, and the embodiments of the present disclosure do not limit the parameters such as the composition and content of the reaction gas, cleaning gas and curing gas.

[0062] Figure 6 A schematic cross-sectional view of an air intake mechanism provided in some embodiments of the present disclosure.

[0063] Combined with reference Figure 4 and Figure 6 In some embodiments, the air intake mechanism 301 includes a guide plate 331, a first air outlet plate 341, and a second air outlet plate 351. The guide plate 331 has an air inlet hole 311 and a guide channel 3211 connected to the air inlet hole 311; the first air outlet plate 341 has a plurality of first air outlet holes 3212 that pass through the first air outlet plate, and the first air outlet holes 3212 are connected to the guide channel 3211; the second air outlet plate 351 and the guide plate 331 are respectively located on the first air outlet plate 341. On both sides, the second air outlet plate 351 has a plurality of second air outlet holes 3213 passing through the second air outlet plate 351, the second air outlet holes 3213 are connected to the first air outlet holes 3212, the distribution density of the second air outlet holes 3213 is greater than the distribution density of the first air outlet holes 3212, and the aperture of the second air outlet holes 3213 is smaller than the aperture of the first air outlet holes 3212; the air inlet channel 321 is composed of the guide channel 3211, the first air outlet hole 3212 and the second air outlet hole 3213.

[0064] The guide plate 331 is used to connect the air inlet pipe for providing gas. Specifically, the air inlet hole 311 of the guide plate 331 is used to connect the air inlet pipe for providing gas and guide the gas so that the gas is distributed not only near the air inlet hole 311 but also in the part far away from the air inlet hole 311.

[0065] The first outlet plate 341 is configured to communicate with the guide channel 3211 and transfer gas in the guide channel 3211 to the second outlet plate 351. Specifically, the first outlet hole 3212 of the first outlet plate 341 is configured to communicate with the guide channel 3211 and transfer gas in the gas guide channel 3211 to the second outlet plate 351.

[0066] The second gas outlet plate 351 and the guide plate 331 are respectively located on two opposite sides of the first gas outlet plate 341. The second gas outlet plate 351 is used to transport the gas in the first gas outlet plate 341 to the reaction chamber 310. Specifically, the second gas outlet hole 3213 of the second gas outlet plate 351 is connected to the first gas outlet hole 3212 to transport the gas in the first gas outlet plate 341 to the reaction chamber 310.

[0067] The second air outlet 3213 is connected to the first air outlet 3212. The distribution density of the second air outlet 3213 is greater than the distribution density of the first air outlet, and the aperture of the second air outlet 3213 is smaller than the aperture of the first air outlet 3212, so that the gas is first roughly diverted through the first air outlet 3212 and then finely diverted through the second air outlet 3213, so that the gas entering the reaction chamber 310 through the air intake mechanism 301 is as uniform as possible in the horizontal direction X, which is beneficial to improving the uniformity of the target material layer prepared on the wafer 11.

[0068] Continue to refer Figure 4 The exhaust port 302 is used to remove by-products and waste gas from the reaction chamber 310.

[0069] In some embodiments, a vacuum pump may be provided on the side of the vacuum port 302 away from the reaction chamber 310 to help quickly exhaust gas from the vacuum port 302. A controller may be connected to the vacuum pump. After a film layer is deposited on the surface of the wafer 11, before the movable stage 303 moves in the vertical direction Y to the curing chamber 330, the controller may control the vacuum pump to remove byproducts and waste gases from the film layer deposition in the reaction chamber 310. This prevents the curing effect of the film layer from being affected by the reaction gas remaining in the reaction chamber 310 during the deposition of the target material layer when curing gas is introduced into the reaction chamber 310, thereby improving the reliability of the reaction chamber structure.

[0070] The movable stage 303 is used to place the wafer 11. The movable stage 303 is movable in the vertical direction Y, thereby driving the wafer 11 to move in the vertical direction Y.

[0071] In some embodiments, the controller may control the movable stage 303 to move alternately in the deposition chamber 320 and the curing chamber 330 , so that the wafer 11 is alternately placed in the deposition chamber 320 or the curing chamber 330 . Thus, the reaction chamber structure can alternately deposit and cure the film layer, allowing the wafer 11 to deposit a film layer in the deposition chamber 320, and after the wafer 11 is moved to the curing chamber 330 by the movable stage 303 to convert the film layer into a target material layer, the wafer is moved to the deposition chamber 320 by the movable stage 303, and another film layer is deposited on the surface of the target material layer, and then moved to the curing chamber 330 by the movable stage 303, so that the film layer on the surface of the target material layer is converted into the target material layer in the curing chamber 330. The above-mentioned steps of depositing the film layer and curing the film layer can be alternately performed multiple times by moving the movable stage 303, which can ensure that the curing effect of the upper and lower parts of the prepared target material layer is the same, and can avoid the situation where other film layers and / or the target material layer are bent when other film layers are subsequently prepared on the target material layer due to different curing effects of the upper and lower parts of the target material layer, thereby affecting the performance of the device containing the target material layer, thereby improving the reliability of the prepared target material layer.

[0072] In a specific example, when a 500 angstrom thick normal stress silicon nitride layer needs to be prepared, a first silicon nitride film layer with a thickness of 170 angstroms can be deposited in the deposition chamber 320, and then the first silicon nitride film layer is moved to the curing chamber 330 via the movable stage 303, so that the first silicon nitride film layer receives curing energy and is converted into a first normal stress silicon nitride layer. Then, the wafer 11 is moved to the deposition chamber 320 via the movable stage 303, and a second silicon nitride film layer with a thickness of 170 angstroms is deposited on the surface of the first normal stress silicon nitride layer, and then the wafer 11 is moved to the deposition chamber 320 via the movable stage 303. The stage 303 is moved to the curing chamber 330, where the second silicon nitride film layer receives curing energy and is converted into a second normal stress silicon nitride layer. The wafer 11 is then moved to the deposition chamber 320 via the movable stage 303, where a third silicon nitride film layer having a thickness of 170 angstroms is deposited on the surface of the second normal stress silicon nitride layer. The movable stage 303 is then moved to the curing chamber 330, where the third silicon nitride film layer receives curing energy and is converted into a third normal stress silicon nitride layer, thereby obtaining a desired normal stress silicon nitride layer having a thickness of 500 angstroms. In other words, the movable stage 303 can be moved alternately to perform three deposition and curing processes, each time depositing a 170 angstrom thick silicon nitride film layer, ultimately obtaining a 500 angstrom normal stress silicon nitride layer. The film layer during each curing process is a 170 angstrom thick silicon nitride film layer. The thinner thickness of the silicon nitride film layer ensures that the upper and lower portions of each silicon nitride film layer have the same curing effect, resulting in the same curing effect for the upper and lower portions of the resulting positive stress silicon nitride layer. This results in a higher reliability of the positive stress silicon nitride layer prepared using this reaction chamber structure. It is understood that curing a film layer densifies it into a target material layer, so the thickness of the film layer after curing is slightly lower than the thickness of the film layer before curing. Therefore, when performing three deposition and curing processes to prepare a 500 angstrom positive stress silicon nitride layer, a 170 angstrom thick silicon nitride film layer is required for each deposition.

[0073] It can be understood that when the required thickness of the target material layer to be prepared is relatively thin, after the film layer is deposited in the deposition chamber 320 and converted into the target material layer in the curing chamber 330 through the movable stage 303, the preparation of the target material layer of the required thickness and the same curing effect of the upper and lower parts can be completed. When the required thickness of the target material layer to be prepared is relatively thick, the movable stage 303 can be moved alternately in the deposition chamber 320 and the curing chamber 330 so that the wafer 11 is alternately placed in the deposition chamber 320 or the curing chamber 330 to complete the alternation of depositing the film layer and curing the film layer to obtain the target material layer of the required thickness and the same curing effect of the upper and lower parts. That is, when the reaction chamber structure in the embodiment of the present disclosure prepares the target material layer, the preparation of the target material layer can be completed directly by first depositing and then curing, or the preparation of the target material layer can be completed by alternating deposition and curing multiple times. The embodiment of the present disclosure does not limit the number of alternations of depositing the film layer and curing the film layer.

[0074] In some embodiments, a heater (not shown) may be provided in the movable stage 303, and the heater is used to heat the wafer 11; the heater is also connected to a controller, and the controller is also used to control the heating temperature of the heater. Such an arrangement enables the reaction chamber structure to provide the required temperature during the deposition of the film layer, and also to provide the required temperature during the curing of the film layer, which is conducive to improving the practicality of the reaction chamber structure. In addition, the controller can control the heating temperature of the heater. When the temperature required for the deposition of the film layer is different from the temperature required for the curing of the film layer, the heating temperature of the heater can be controlled by the controller, and the heating temperature of the heater is adjusted to the temperature required for the deposition of the film layer during the deposition of the film layer, and the heating temperature of the heater is adjusted to the temperature required for the curing of the film layer during the curing of the film layer, which can further improve the practicality of the reaction chamber structure.

[0075] The curing mechanism 304 is used to provide curing energy to the film layer so that the film layer can be transformed into a target material layer.

[0076] Curing mechanism 304 can be a light source curing mechanism such as a UV curing mechanism that provides light energy. The wavelength of the light beam provided by the light source curing mechanism can be between 100 nm and 400 nm. The light beam provided by the light source curing mechanism can have a fixed wavelength, or can be a combination of several wavelengths or a wavelength range. Curing mechanism 304 can also be a thermal curing mechanism that provides heat energy, or a plasma curing mechanism that provides a plasma energy source.

[0077] Figure 7 A schematic top view of the curing mechanism and movable platform provided in some embodiments of the present disclosure.

[0078] Combined with reference Figure 4 and Figure 7In some embodiments, the curing mechanism 304 can be circumferentially arranged within the curing chamber 330. With this arrangement, the curing mechanism 304 is an integrated unit and can provide curing energy to the film layer on the surface of the wafer 11 placed on the movable stage 303 in all directions. This allows the film layer to receive the curing energy and convert it into the target material layer, thereby improving the reliability of preparing the target material layer.

[0079] Figure 8 Another schematic top view of the curing mechanism and movable platform provided in some embodiments of the present disclosure.

[0080] Combined with reference Figure 4 and Figure 8 In some embodiments, the curing mechanism 304 may include multiple curing devices 314, which are arranged circumferentially within the curing chamber 330. This arrangement can save manufacturing costs for the curing mechanism 304 while meeting the curing energy required for converting the film layer into the target material layer, thereby reducing the manufacturing costs of the reaction chamber structure.

[0081] It is understandable that Figure 8 The figure shows a case where the curing mechanism includes 8 curing devices. In fact, the number of curing devices in the curing mechanism can also be other values ​​besides 8. The embodiment of the present disclosure does not limit the number of curing devices in the curing mechanism.

[0082] Continue to refer Figure 4 In some embodiments, the curing mechanism 304 can be vertically mounted on the sidewall of the curing chamber 330. With this arrangement, when the wafer 11 is positioned in the curing chamber 330, the curing mechanism 304, which is circumferentially disposed and vertically mounted on the sidewall of the curing chamber 304, can provide the film layer with the required curing energy, allowing it to be converted into the target material layer. Furthermore, since the curing mechanism 304 is vertically mounted on the sidewall of the curing chamber 330, the curing mechanism 304 does not need to be moved, extended, or otherwise operated, thereby simplifying the reaction chamber structure of the disclosed embodiment and improving the production cost of the reaction chamber structure.

[0083] Figure 9 This is a schematic cross-sectional view of a reaction chamber structure in which a baffle is in a retracted state, provided in some embodiments of the present disclosure. Figure 10 Schematic diagram of the cross-sectional structure of the baffle in a stretched state in the reaction chamber structure provided in some embodiments of the present disclosure.

[0084] Combined with reference Figure 9 and Figure 10In some embodiments, the reaction chamber structure may further include a baffle 305, which is located on top of the curing mechanism 304. The baffle 305 is retractable in the horizontal direction X. The baffle 305 is connected to a controller. During film deposition, the controller is used to control the baffle 305 to extend so that the baffle 305 blocks the passage between the deposition chamber 320 and the curing chamber 330. After film deposition, the controller is used to control the baffle 305 to retract so that the baffle 305 does not block the passage between the deposition chamber 320 and the curing chamber 330. Figure 10 During the film deposition process, the controller controls the baffle 305 to stretch in the horizontal direction X, so that the baffle 305 blocks the passage between the deposition chamber 320 and the curing chamber 330 to prevent the reaction gas from entering the curing chamber 330 and contaminating the curing mechanism 304. Figure 9 After film deposition is completed in deposition chamber 320, the controller controls baffle 305 to retract in the horizontal direction X, allowing movable stage 303 to move in the vertical direction Y, thereby enabling movable stage 303 to move from deposition chamber 320 to curing chamber 330 and from curing chamber 330 to deposition chamber 320. Baffle 305 is provided to prevent reaction gases from contaminating curing mechanism 304 without affecting the movement of movable stage 303, thereby ensuring the curing effect of curing mechanism 304 and improving the reliability of the reaction chamber structure.

[0085] Figure 11 A schematic cross-sectional structure diagram of a movable platform located in a curing chamber in the second reaction chamber structure provided in some embodiments of the present disclosure.

[0086] refer to Figure 11 In some embodiments, the curing mechanism 304 may be a light curing mechanism that provides a light beam to provide curing energy for the film layer. The surface of the baffle 305 facing away from the air inlet mechanism 301 is a reflective surface 325. While the light curing mechanism is providing curing energy, the reflective surface 325 is used to reflect the light beam. When the movable stage 303 is within the curing chamber 330, and the film layer is receiving curing energy and being transformed into the target material layer (i.e., during the curing process), the controller controls the baffle 305 to extend in the horizontal direction X, causing at least a portion of the reflective surface 325 to extend beyond the top portion of the curing mechanism 304. Furthermore, the light curing mechanism provides curing energy through a light beam. This arrangement allows a portion of the light emitted upward by the light curing mechanism to be reflected onto the surface of the wafer 11 via the reflective surface 325, thereby increasing the light beam energy utilization of the light curing mechanism and improving the practicality of the reaction chamber structure. When the film layer is cured, the controller controls the baffle 305 to retract in the horizontal direction X, so that the baffle 305 no longer blocks the movable stage 303 from moving from the curing chamber 330 to the deposition chamber 320.

[0087] Figure 12This is a schematic cross-sectional view of the first telescopic mechanism in a contracted state in the third reaction chamber structure provided in some embodiments of the present disclosure. Figure 13 A schematic cross-sectional structure diagram of a first telescopic mechanism in a stretched state in a third reaction chamber structure provided in some embodiments of the present disclosure.

[0088] Combined with reference Figure 12 and Figure 13 In some embodiments, the reaction chamber structure may further include: a baffle 305 and a first telescopic mechanism 315 . The baffle 305 is located on top of the curing mechanism 304 . The first telescopic mechanism 315 is disposed on the sidewall of the curing chamber 330 and is retractable in the horizontal direction X. The first telescopic mechanism 315 is connected to the baffle 305 and is used to drive the baffle 305 to move. The first telescopic mechanism 315 is connected to a controller. During film deposition, the controller controls the first telescopic mechanism 315 to extend, which drives the baffle 305 to move. The baffle 305 is used to block the passage between the deposition chamber 320 and the curing chamber 330 . After film deposition, the controller controls the first telescopic mechanism 315 to retract, which drives the baffle 305 to move, so that the baffle 305 no longer blocks the passage between the deposition chamber 320 and the curing chamber 330 . During film deposition in deposition chamber 320, the controller controls first telescopic mechanism 315 to extend in horizontal direction X, causing baffle 305 to block the passage between deposition chamber 320 and curing chamber 330. This prevents reactant gases from entering curing chamber 330 and contaminating curing mechanism 304. When film deposition in deposition chamber 320 is complete, the controller controls first telescopic mechanism 315 to retract in horizontal direction X, allowing movable stage 303 to move in vertical direction Y, allowing movable stage 303 to move from deposition chamber 320 to curing chamber 330 or vice versa. The baffle 305 is designed to prevent reactant gases from contaminating curing mechanism 304 without affecting the movement of movable stage 303, thereby ensuring the curing effect of curing mechanism 304 and improving the reliability of the reaction chamber structure.

[0089] Figure 14 A schematic cross-sectional view of a movable platform located within a curing chamber in a third reaction chamber structure provided for some embodiments of the present disclosure.

[0090] refer to Figure 14In some embodiments, the curing mechanism 304 may be a light source curing mechanism, which is configured to provide a light beam to provide curing energy for the film layer. The surface of the baffle 305 facing away from the air inlet mechanism 301 may be a reflective surface 325. During the period when the light source curing mechanism provides curing energy, the reflective surface 325 is configured to reflect the light beam. When the movable stage 303 is within the curing chamber 330, and the film layer receives curing energy and is converted into a target material layer, i.e., during the curing of the film layer, the controller controls the first telescopic mechanism 315 to extend in the horizontal direction X, thereby driving the baffle 305 to move so that at least a portion of the reflective surface 325 extends beyond the top portion of the curing mechanism 304. The light source curing mechanism provides curing energy via a light beam. This configuration allows a portion of the light emitted upward by the light source curing mechanism to be reflected via the reflective surface 325 onto the surface of the wafer 11, thereby increasing the light beam energy utilization rate of the light source curing mechanism and thereby improving the practicality of the reaction chamber structure. When the film layer is cured, the controller controls the first telescopic mechanism 315 to retract in the horizontal direction X so that the baffle 30 does not block the movable stage 303 from moving from the curing chamber 330 to the deposition chamber 320 .

[0091] It is understandable that the reaction chamber structure may also not be provided with a baffle. After the target material layer is prepared on the surface of the wafer 11 and the wafer 11 is taken out, some by-products produced by the introduction of the reaction gas may be deposited on the surface of the curing mechanism 304. The clean gas can be introduced through the air intake mechanism 301 to clean the side walls of the reaction chamber body 300 while also cleaning the curing mechanism 304 to ensure that the curing mechanism 304 can work normally during the subsequent curing process, and the reliability of the reaction chamber structure can also be improved.

[0092] Continue to refer Figure 4 In some embodiments, the reaction chamber structure may further include a radio frequency (RF) power supply 306 and / or a remote plasma source (RPS) 316. RF power supply 306 is used to provide the electric field required to form the plasma. Remote plasma source 316 is used to convert the gas into a plasma state.

[0093] The power source of the RF power source 306 may include at least one of a high frequency power source and a low frequency power source. The operating frequency of the high frequency power source is generally above 10 kHz, while the frequency of the low frequency power source is generally below 10 kHz.

[0094] The controller is connected to the RF power supply 306 and can control the power of the RF power supply 306 .

[0095] In a specific example, when the target material layer is a normal stress silicon nitride layer, the reaction gases are SiH4, N2, and NH3, the flow rate of each gas can be 0 sccm-20,000 sccm, and the RF power supply 306 uses a high-frequency power supply and a low-frequency power supply. The power of the high-frequency power supply is 1W-1500W, and the power of the low-frequency power supply is 0W-1000W. The pressure in the reaction chamber 310 is 0.1 torr-20 torr, and the temperature is 100°C-600°C. The stress, thickness, uniformity, and optical constants of the normal stress silicon nitride layer can be adjusted by adjusting the pressure in the reaction chamber 310, the flow rate and gas ratio of the reaction gases, and the power of the high-frequency / low-frequency power supplies.

[0096] It can be understood that when the reaction gas is introduced through the air intake mechanism 301, the reaction gas can first pass through the RF power supply 306 or the remote control plasma controller 316 to convert the reaction gas into a plasma state, and then enter the reaction chamber 310 through the air intake mechanism 301. When the air intake mechanism 301 introduces the curing gas required for film curing and the curing gas does not need to be in a plasma state, the curing gas can directly enter the reaction chamber 310 through the air intake mechanism 301. At this time, the curing gas does not need to pass through the RF power supply 306 and the remote control plasma controller 316.

[0097] In some embodiments, the reaction chamber structure may further include a ceramic sleeve 307 . The ceramic sleeve 307 is located on a sidewall of the deposition chamber 320 to protect the deposition chamber 320 .

[0098] Other embodiments of the present disclosure also provide a reaction chamber structure. This reaction chamber structure is substantially similar to the reaction chamber structure provided in the aforementioned embodiments, with the primary difference being that the curing mechanism in the reaction chamber structure provided in the following embodiments includes at least one movable curing device. This reaction chamber structure will be described in detail below with reference to the accompanying drawings. It should be noted that features that are identical or corresponding to those in the aforementioned embodiments will not be described in detail below to avoid redundancy. Unless there is a conflict, the corresponding descriptions of the aforementioned embodiments also apply to the corresponding features of the following embodiments.

[0099] Figure 15 Schematic diagram of the cross-sectional structure of the second telescopic mechanism in the first reaction chamber structure in another embodiment of the present disclosure in a contracted state, Figure 16 Schematic diagram of the cross-sectional structure of the second telescopic mechanism in the contracted state in the first reaction chamber structure provided in other embodiments of the present disclosure.

[0100] It should be noted that Figure 15 and Figure 16The figure shows a case where the curing mechanism includes two movable curing devices. In fact, the number of movable curing devices in the curing mechanism can also be other values. The embodiment of the present disclosure does not limit the number of movable curing devices.

[0101] Combined with reference Figure 15 and Figure 16 The reaction chamber structure includes a reaction chamber body 400, an air intake mechanism 401, an air extraction port 402, a movable stage 403, a curing mechanism 404, and a controller. The reaction chamber body 400 includes a reaction chamber 410, which includes a deposition chamber 420 and a curing chamber 430 connected in the vertical direction Y. The air intake mechanism 401 is arranged at the top of the reaction chamber 410. The air intake mechanism 401 has an air inlet 411 and an air inlet channel 421 connected to the air inlet 411. The air inlet channel 421 is connected to the reaction chamber 410, and the air inlet 411 is used to connect to the air inlet pipe for providing gas. The air extraction port 402 is connected to the reaction chamber 410. The movable stage 403 is used to carry the wafer 11, and the movable stage 403 can move up and down in the vertical direction Y within the reaction chamber 410, so that the wafer 11 can be placed in the deposition chamber 420 to deposit a film layer on the surface of the wafer 11, or so that the wafer 11 can be placed in the curing chamber 430. The curing mechanism 404 is located in the curing chamber 430, and the curing mechanism 404 is used to provide curing energy to the film layer while the wafer 11 is placed in the curing chamber 430, so as to convert the film layer into a target material layer. The controller is connected to the movable stage 403 and the curing mechanism 404, and is used to control the movable stage 403 to move in the vertical direction Y so that the wafer 11 can be placed in the deposition chamber 420 to deposit a film layer on the surface of the wafer 11. It is also used to control the movable stage 403 to move in the vertical direction Y after the film layer is deposited, so that the wafer 11 can be placed in the curing chamber 430, and to control the curing mechanism 404 to provide curing energy to the film layer.

[0102] It should be noted that the reaction chamber body 400, the air inlet mechanism 401, the air exhaust port 402, the movable carrier 403, the RF power supply 406, the remote control plasma controller 416 and the ceramic kit 407 of the embodiment of the present disclosure can refer to the reaction chamber body 300, the air inlet mechanism 301, the air exhaust port 302, the movable carrier 303, the RF power supply 306, the remote control plasma controller 316 and the ceramic kit 307 in the previous embodiment, and will not be repeated here.

[0103] In some embodiments, the curing mechanism 404 may include at least one movable curing device 424; the reaction chamber structure includes: a second telescopic mechanism 408, the second telescopic mechanism 408 is arranged on the side wall of the curing chamber 430, the second telescopic mechanism 408 is connected to the movable curing device 424, and the second telescopic mechanism 408 is connected to the controller. When the movable carrier 403 is located in the curing chamber 430, the controller controls the second telescopic mechanism 408 to stretch, driving the movable curing device 424 to move, so that the movable curing device 424 is located directly above the wafer 11, and the controller controls the movable curing device 424 to provide the curing energy. After the film layer is cured, the controller controls the rotatable curing device 424 to stop providing curing energy, and the controller controls the second telescopic mechanism 408 to contract, driving the movable curing device 424 away from directly above the wafer 11, so that the movable curing device 424 does not block the movable carrier from moving in the vertical direction Y.

[0104] After the film layer is deposited, the movable carrier 543 moves into the curing chamber 430, and the movable curing device 424 moves via the second telescopic mechanism 408, so that the movable curing device 424 is located directly above the wafer 11, so that the movable curing device 424 provides curing energy to the film layer on the surface of the wafer 11. Since the movable curing device 424 is located directly above the wafer 11, the curing energy received by the central area of ​​the film layer on the surface of the wafer 11 and the edge area surrounding the central area can be made consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of the reaction chamber structure in preparing the target material layer. In addition, after the film layer is cured, the movable curing device 424 moves via the second telescopic mechanism 408, so that the movable curing device 424 does not affect the movement of the movable carrier 403 in the vertical direction Y.

[0105] In some embodiments, the cross-sectional area of ​​the curing chamber 430 perpendicular to the vertical direction Y can be equal to the cross-sectional area of ​​the deposition chamber 420 perpendicular to the vertical direction Y. In other words, the orthographic projection of the curing chamber 430 on the horizontal plane coincides with the orthographic projection of the deposition chamber 420 on the horizontal plane. This configuration can reduce the manufacturing cost of the reaction chamber structure.

[0106] Figure 17 Schematic diagram of the cross-sectional structure of the second telescopic mechanism in the retracted state in the second reaction chamber structure provided in other embodiments of the present disclosure.

[0107] refer to Figure 17In some embodiments, the cross-sectional area of ​​the curing chamber 430 perpendicular to the vertical direction Y can be larger than the cross-sectional area of ​​the deposition chamber 420 perpendicular to the vertical direction Y. In other words, the orthographic projection of the deposition chamber 420 on the horizontal plane is located within the orthographic projection of the curing chamber 430 on the horizontal plane, and the orthographic projection area of ​​the deposition chamber 420 on the horizontal plane is smaller than the orthographic projection area of ​​the curing chamber 430 on the horizontal plane. With this configuration, the deposition chamber 420 has more space in the horizontal direction X, which can accommodate the movable curing device 424 that is longer in the horizontal direction X. When curing a film layer, the movable curing device 424 that is longer in the horizontal direction X can cure a larger area of ​​the film layer, thereby improving the curing efficiency of the curing mechanism 404 and thereby improving the efficiency of preparing the target material layer.

[0108] Some embodiments of the present disclosure further provide a reaction chamber structure. This reaction chamber structure is substantially similar to the reaction chamber structure provided in the aforementioned embodiments, with the primary difference being that the curing mechanism in the reaction chamber structure provided in the following embodiments includes at least one retractable curing device. This reaction chamber structure will be described in detail below with reference to the accompanying drawings. It should be noted that features that are identical or corresponding to those in the aforementioned embodiments will not be described in detail below to avoid redundancy. Unless there is a conflict, the corresponding descriptions of the aforementioned embodiments also apply to the corresponding features of the following embodiments.

[0109] Figure 18 Schematic diagram of the cross-sectional structure of the retractable solidifier in the reaction chamber structure provided in some embodiments of the present disclosure in a retracted state, Figure 19 Another schematic cross-sectional structure diagram of a retractable solidifier in a stretched state in a reaction chamber structure provided in some embodiments of the present disclosure.

[0110] It should be noted that Figure 18 and Figure 19 The figure shows a case where the curing mechanism includes two retractable curing devices. In fact, the number of retractable curing devices in the curing mechanism can also be other values. The embodiment of the present disclosure does not limit the number of retractable curing devices.

[0111] Combined with reference Figure 18 and Figure 19The reaction chamber structure includes a reaction chamber body 500, an air intake mechanism 501, an air extraction port 502, a movable stage 503, a curing mechanism 504, and a controller. The reaction chamber body 500 includes a reaction chamber 510, which includes a deposition chamber 520 and a curing chamber 530 connected in the vertical direction Y. The air intake mechanism 501 is arranged at the top of the reaction chamber 510. The air intake mechanism 501 has an air inlet 511 and an air inlet channel 521 connected to the air inlet 511. The air inlet channel 521 is connected to the reaction chamber 510, and the air inlet 511 is used to connect to the air inlet pipe for providing gas. The air extraction port 502 is connected to the reaction chamber 510. The movable stage 503 is used to carry the wafer 11, and the movable stage 503 can move up and down in the vertical direction Y within the reaction chamber 510, so that the wafer 11 can be placed in the deposition chamber 520 to deposit a film layer on the surface of the wafer 11, or so that the wafer 11 can be placed in the curing chamber 530. The curing mechanism 504 is located in the curing chamber 530 and is used to provide curing energy to the film layer while the wafer 11 is placed in the curing chamber 530, so as to convert the film layer into a target material layer. The controller is connected to the movable stage 503 and the curing mechanism 504, and is used to control the movable stage 503 to move in the vertical direction Y so that the wafer 11 can be placed in the deposition chamber 520 to deposit a film layer on the surface of the wafer 11. It is also used to control the movable stage 503 to move in the vertical direction Y after the film layer is deposited, so that the wafer 11 can be placed in the curing chamber 530, and to control the curing mechanism 504 to provide curing energy to the film layer.

[0112] It should be noted that the reaction chamber body 500, the air inlet mechanism 501, the air exhaust port 502, the movable carrier 503, the RF power supply 506, the remote control plasma controller 516 and the ceramic kit 507 of the embodiment of the present disclosure can refer to the reaction chamber body 300, the air inlet mechanism 301, the air exhaust port 302, the movable carrier 303, the RF power supply 306, the remote control plasma controller 316 and the ceramic kit 307 in the embodiment, and will not be repeated here.

[0113] In some embodiments, the curing mechanism 504 may include at least one retractable curing device 534, which is retractable in the curing chamber 530. The retractable curing device 534 is connected to a controller. When the movable carrier 503 is located in the curing chamber 530, the controller controls the retractable curing device 534 to stretch so that at least part of the retractable curing device 534 is located directly above the wafer 11, and the controller controls the retractable curing device 534 to provide the curing energy. After curing the film layer, the controller controls the retractable curing device 534 to stop providing the curing energy, and the controller controls the retractable curing device 534 to contract so that the retractable curing device 534 does not block the movable carrier 503 from moving in the vertical direction Y.

[0114] After the film layer is deposited, the movable carrier 503 moves into the curing chamber 530, and the retractable curing device 534 is stretched so that at least part of the retractable curing device 534 is located directly above the wafer 11, so that the retractable curing device 534 provides curing energy to the film layer on the surface of the wafer 11. Since at least part of the retractable curing device 534 is located directly above the wafer 11, the curing energy received by the central area of ​​the film layer on the surface of the wafer 11 and the edge area surrounding the central area can be made consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of the reaction chamber structure in preparing the target material layer. In addition, after the film layer is cured, the retractable curing device 534 contracts so that the retractable curing device 534 does not affect the movement of the movable carrier 503 in the vertical direction Y. In addition, because the retractable curing device 534 is retractable, the reaction chamber structure does not need to be equipped with an additional device to move the retractable curing device 534, thereby making the device of the reaction chamber structure more streamlined.

[0115] Some further embodiments of the present disclosure further provide a reaction chamber structure. This reaction chamber structure is substantially similar to the reaction chamber structure provided in the aforementioned embodiments, with the primary difference being that the curing mechanism in the reaction chamber structure provided in the following embodiments includes at least one rotatable curing device. This reaction chamber structure will be described in detail below with reference to the accompanying drawings. It should be noted that features that are identical or corresponding to those in the aforementioned embodiments will not be described in detail below to avoid redundancy. Unless there is a conflict, the corresponding descriptions of the aforementioned embodiments also apply to the corresponding features of the following embodiments.

[0116] Figure 20 This is a schematic cross-sectional view of a reaction chamber structure provided in some further embodiments of the present disclosure, wherein the rotatable solidifier is parallel to the vertical direction. Figure 21 Schematic diagram of the cross-sectional structure of the rotatable solidifier parallel to the horizontal direction in the reaction chamber structure provided in some further embodiments of the present disclosure.

[0117] It should be noted that Figure 20 and Figure 21 The figure shows the case where the curing mechanism includes two rotatable curing devices. In fact, the number of rotatable curing devices in the curing mechanism can also be other values. The embodiment of the present disclosure does not limit the number of rotatable curing devices.

[0118] Combined with reference Figure 20 and Figure 21The reaction chamber structure includes a reaction chamber body 600, an air inlet mechanism 601, an air extraction port 602, a movable stage 603, a curing mechanism 604, and a controller. The reaction chamber body 600 includes a reaction chamber 610, which includes a deposition chamber 620 and a curing chamber 630 connected in the vertical direction Y. The air inlet mechanism 601 is arranged at the top of the reaction chamber 610. The air inlet mechanism 601 has an air inlet hole 611 and an air inlet channel 621 connected to the air inlet hole 611. The air inlet channel 621 is connected to the reaction chamber 610, and the air inlet hole 611 is used to connect to the air inlet pipe for providing gas. The air extraction port 602 is connected to the reaction chamber 610. The movable stage 603 is used to support the wafer 11, and the movable stage 603 can move up and down in the vertical direction Y within the reaction chamber 610, so that the wafer 11 can be placed in the deposition chamber 620 to deposit a film layer on the surface of the wafer 11, or so that the wafer 11 can be placed in the curing chamber 630. The curing mechanism 604 is located in the curing chamber 630 and is used to provide curing energy to the film layer while the wafer 11 is placed in the curing chamber 630, thereby converting the film layer into a target material layer. The controller is connected to the movable stage 603 and the curing mechanism 604, and is used to control the movable stage 603 to move in the vertical direction Y so that the wafer 11 can be placed in the deposition chamber 620 to deposit a film layer on the surface of the wafer 11. It is also used to control the movable stage 603 to move in the vertical direction Y after the film layer is deposited, so that the wafer 11 can be placed in the curing chamber 630, and to control the curing mechanism 604 to provide curing energy to the film layer.

[0119] It should be noted that the reaction chamber body 600, the air inlet mechanism 601, the air exhaust port 602, the movable carrier 603, the RF power supply 606, the remote control plasma controller 616 and the ceramic kit 607 of the embodiment of the present disclosure can refer to the reaction chamber body 300, the air inlet mechanism 301, the air exhaust port 302, the movable carrier 303, the RF power supply 306, the remote control plasma controller 316 and the ceramic kit 307 in the above-mentioned embodiment, and no further details are given here.

[0120] In some embodiments, the curing mechanism 604 may include at least one rotatable curing device 644; the reaction chamber structure may further include a rotating fixture 609, which is located in the curing chamber 630, and the rotatable curing device 644 is rotatably connected to the rotating fixture 609; wherein the controller is connected to the rotatable curing device 644, and when the movable carrier 603 is located in the curing chamber 630, the controller controls the rotatable curing device 644 to rotate around the rotating fixture 609 to be parallel to the horizontal direction X, so that at least part of the rotatable curing device 644 is located directly above the wafer 11, and the controller controls the rotatable curing device 644 to provide the curing energy. After the film layer is cured, the controller controls the rotatable curing device 644 to stop providing the curing energy, and the controller controls the rotatable curing device 644 to rotate around the rotating fixture 609 to be parallel to the vertical direction Y, so that the rotatable curing device 644 fits the side wall of the curing chamber 630.

[0121] After the film layer is deposited, the movable carrier 603 moves into the curing chamber 630, and the rotatable curing device 644 rotates to be parallel to the horizontal direction X, so that at least a portion of the rotatable curing device 644 is located directly above the wafer 11, so that the rotatable curing device 644 provides curing energy to the film layer on the surface of the wafer 11. Since at least a portion of the rotatable curing device 644 is located directly above the wafer 11, the curing energy received by the central area of ​​the film layer on the surface of the wafer 11 and the edge area surrounding the central area can be made consistent, thereby improving the reliability of the cured film layer and further improving the reliability of the reaction chamber structure in preparing the target material layer. In addition, when the film layer is cured, the rotatable curing device 644 rotates to be parallel to the vertical direction Y, so that the rotatable curing device 644 does not affect the movement of the movable carrier 603 in the vertical direction Y.

[0122] The rotating fixing member 609 can be a rotating bearing or a slewing bearing or other components.

[0123] In the above-mentioned embodiment of the reaction chamber structure, the deposition chamber and the curing chamber are located in the same reaction chamber. After the film deposition is completed, the movable stage can be moved in the vertical direction to move the wafer into the curing chamber to provide curing energy for the film layer to convert it into a target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related technology. Not only can a lot of time be saved, thereby improving the preparation efficiency of the target material layer, but also defects caused by moving the wafer between different chambers can be avoided, thereby improving the reliability of preparing the target material layer.

[0124] Accordingly, another embodiment of the present disclosure further provides a deposition device having the reaction chamber structure of any of the above embodiments. For the same or corresponding parts as the previous embodiment, reference can be made to the corresponding description of the previous embodiment, and will not be repeated in detail below.

[0125] The deposition device includes the reaction chamber structure described in any one of the above embodiments.

[0126] The deposition equipment can be used to implement flowable chemical vapor deposition to produce a target material layer. The deposition equipment can also be used to implement other vapor phase chemical deposition methods to produce the target material layer, such as atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), ultrahigh vacuum chemical vapor deposition (UHVCVD), metal-organic chemical vapor deposition (MOCVD), or plasma-enhanced chemical vapor deposition (PECVD).

[0127] Those skilled in the art will appreciate that the above-described embodiments are specific examples for implementing the present disclosure, and that in actual applications, various changes in form and detail may be made thereto without departing from the spirit and scope of the present disclosure. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be subject to the scope defined in the claims.

Claims

1. A reaction chamber structure, applied to a deposition device, characterized in that: include: A reaction chamber body, wherein the reaction chamber body includes a reaction chamber, wherein the reaction chamber includes a deposition chamber and a curing chamber connected in a vertical direction, wherein the orthographic projection of the deposition chamber on a horizontal plane coincides with the orthographic projection of the curing chamber on a horizontal plane, or the orthographic projection of the deposition chamber on a horizontal plane is located within the orthographic projection of the curing chamber on a horizontal plane; An air intake mechanism, the air intake mechanism being disposed at the top of the reaction chamber, the air intake mechanism comprising an air intake hole and an air intake channel communicating with the air intake hole, the air intake channel being communicated with the reaction chamber, and the air intake hole being used to communicate with an air intake pipe for providing gas; an air extraction port, the air extraction port being in communication with the reaction chamber; A movable stage, the movable stage is used to carry a wafer, and the movable stage can move up and down along the vertical direction in the reaction chamber, so that the wafer is placed in the deposition chamber to deposit a film layer on the surface of the wafer, or the wafer is placed in the curing chamber, and the movable stage moves alternately between the deposition chamber and the curing chamber, so that the wafer is alternately placed in the deposition chamber or the curing chamber; A light source curing mechanism, the light source curing mechanism being located in the curing chamber and circumferentially arranged on a side wall of the curing chamber, the light source curing mechanism being configured to provide a light beam to provide curing energy to the film layer while the wafer is placed in the curing chamber, thereby converting the film layer into a target material layer; a controller connected to the movable stage and the curing mechanism, configured to control the movable stage to move in the vertical direction so that the wafer is placed in the deposition chamber to deposit a film layer on the wafer surface, and further configured to control the movable stage to move in the vertical direction after depositing the film layer so that the wafer is placed in the curing chamber, and to control the light source curing mechanism to provide curing energy for the film layer; The baffle has a side facing away from the air inlet mechanism as a reflective surface. During the deposition of the film layer, the baffle blocks the passage between the deposition chamber and the curing chamber. During the curing of the film layer, the reflective surface reflects the light beam.

2. The reaction chamber structure according to claim 1, characterized in that: The light source curing mechanism includes a plurality of curing devices, and the curing devices are circumferentially arranged in the curing chamber.

3. The reaction chamber structure according to claim 1, characterized in that: The baffle is located at the top of the curing mechanism and is retractable in the horizontal direction. The baffle is connected to the controller. During the deposition of the film layer, the controller is used to control the baffle to stretch so that the baffle blocks the passage between the deposition chamber and the curing chamber. After the film layer is deposited, the controller is used to control the baffle to retract so that the baffle does not block the movable stage from moving in the vertical direction.

4. The reaction chamber structure according to claim 1, characterized in that: The baffle is located on the top of the curing mechanism; A first telescopic mechanism, wherein the first telescopic mechanism is arranged on the side wall of the curing chamber, the first telescopic mechanism is telescopic in the horizontal direction, the first telescopic mechanism is connected to the baffle, and is used to drive the baffle to move, the first telescopic mechanism is connected to the controller, during the deposition of the film layer, the controller controls the first telescopic mechanism to stretch, and the first telescopic mechanism drives the baffle to move, and the baffle is used to block the passage between the deposition chamber and the curing chamber, and after the deposition of the film layer, the controller controls the first telescopic mechanism to contract, and the first telescopic mechanism drives the baffle to move, so that the baffle does not block the movable carrier from moving in the vertical direction.

5. A deposition device, characterized in that: The invention comprises the reaction chamber structure according to any one of claims 1 to 4.

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