Temperature intelligent sensing system and preparation method and test method

Abstract

The application provides a temperature intelligent sensing system and a preparation method and a test method, and comprises a synaptic transistor, the synaptic transistor comprises a substrate, a source electrode, a drain electrode and a gate electrode on the substrate, a channel layer on the source electrode first structure and the drain electrode first structure, an insulating protective layer on the substrate, the insulating protective layer exposes the source electrode, the gate electrode, the drain electrode and the channel layer respectively, an electrolyte layer covering the channel layer and the gate electrode, and a temperature sensing layer arranged to cover the surface of the gate electrode and used for generating a voltage pulse signal acting on the gate electrode according to the change of the ambient temperature. Since the temperature sensing layer can generate the voltage pulse signal according to the change of the ambient temperature based on the pyroelectric effect, the temperature sensor and the pulse coding module in the prior art are omitted, so that the temperature intelligent sensing system is small in size and simple in structure.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of temperature detection, in particular to a temperature intelligent sensing system and a preparation method and a test method. BACKGROUND

[0002] In recent years, with the development of artificial intelligence, human-like intelligent sensing systems are widely used in intelligent robots, human-computer interfaces, wearable medical systems and other fields. In order to realize the accurate control of the surrounding environment information by human-like machine devices, it is necessary to collect information about the temperature of the surrounding environment and integrate the information, so as to better and more accurately interact with the human-computer.

[0003] However, the temperature detection principle in the existing temperature intelligent sensing system based on synaptic transistors is usually based on the Seebeck effect, such as patent CN117470282A. However, the problem of temperature detection based on the Seebeck effect is that a voltage signal can only be generated when there is a temperature gradient across the sensor, and this voltage signal needs to be coded into a voltage pulse signal before it can be applied to the synaptic transistor. Therefore, the existing temperature intelligent sensing system based on synaptic transistors needs to be composed of a temperature sensor, a pulse coding module and a synaptic transistor, which increases the structural complexity and volume of the temperature intelligent sensing system.

[0004] Therefore, it has become a technical problem in the industry to provide a temperature intelligent sensing system with small volume and simple structure. SUMMARY

[0005] The technical problem solved by the present application is to provide a temperature intelligent sensing system and a preparation method and a test method, which realizes a temperature intelligent sensing system with small volume and simple structure.

[0006] To solve the above technical problems, the present application provides a temperature intelligent sensing system, comprising:

[0007] A synaptic transistor, the synaptic transistor comprising:

[0008] A substrate;

[0009] A source electrode, a drain electrode and a gate electrode located on the substrate, the source electrode comprising a source first structure and a source second structure, the drain electrode comprising a drain first structure and a drain second structure, and the gate electrode comprising a gate first structure and a gate second structure;

[0010] A channel layer located on the source first structure and the drain first structure;

[0011] An insulating protective layer on the substrate, the insulating protective layer comprising a blocking region, a first window region, a second window region, a third window region and a fourth window region, the first window region exposing the source second structure, the second window region exposing the drain second structure, the third window region exposing the channel layer and the gate first structure, and the fourth window region exposing the gate second structure;

[0012] An electrolyte layer covering the third window region;

[0013] A temperature sensing layer arranged to cover the fourth window region, the temperature sensing layer being configured to generate a voltage pulse signal acting on the gate second structure according to a change in ambient temperature based on a pyroelectric effect.

[0014] Optionally, the temperature sensing layer is at least composed of polyvinylidene fluoride.

[0015] Optionally, the substrate comprises a polyimide substrate.

[0016] Optionally, a spacing between the source first structure and the drain first structure is 80 μm.

[0017] Optionally, the electrolyte layer comprises an ionic gel liquid.

[0018] Optionally, the ionic gel liquid at least comprises poly(vinylidene fluoride-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide.

[0019] Optionally, a mass ratio of poly(vinylidene fluoride-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide is 1:4:7.5:7.5.

[0020] Correspondingly, the present application also provides a preparation method of the temperature intelligent sensing system, comprising:

[0021] providing a substrate;

[0022] forming patterned source electrodes, drain electrodes and gate electrodes on the substrate respectively, wherein the source electrodes comprise source first structures and source second structures, the drain electrodes comprise drain first structures and drain second structures, and the gate electrodes comprise gate first structures and gate second structures;

[0023] forming a patterned channel layer on the substrate, the channel layer covering the source first structures and the drain first structures;

[0024] forming a patterned insulating protective layer on the substrate, the insulating protective layer comprising a blocking region, a first window region, a second window region, a third window region and a fourth window region, the first window region exposing the source second structure, the second window region exposing the drain second structure, the third window region exposing the channel layer and the gate first structure, and the fourth window region exposing the gate second structure;

[0025] forming an electrolyte layer in the third window region;

[0026] forming a temperature sensing layer in the fourth window region.

[0027] Optionally, forming an electrolyte layer in the third window region, specifically comprising:

[0028] water-bath heating and magnetic stirring the ion gel liquid for a first time;

[0029] after the first time of magnetic stirring the ion gel liquid, stirring the ion gel liquid without heating for a second time;

[0030] after the second time of stirring the ion gel liquid without heating, dropping the ion gel liquid on the third window region by a pipette to form the electrolyte layer.

[0031] Correspondingly, the present application also provides a test method based on the above-mentioned temperature intelligent sensing system, comprising:

[0032] applying a first bias voltage on the source second structure and the drain second structure;

[0033] irradiating the temperature sensing layer by an infrared device;

[0034] recording the current information between the source electrode and the drain electrode.

[0035] Compared with the prior art, the technical scheme of the embodiment of the present application has the following beneficial effects:

[0036] In the temperature intelligent sensing system of the present application, the temperature sensing layer is arranged at the fourth window region of the synaptic transistor, thereby realizing a temperature intelligent sensing system with small volume and simple structure. This is because the temperature sensing layer can generate a voltage pulse signal acting on the gate second structure when the ambient temperature changes, thereby eliminating the pulse encoding module of the prior art. At the same time, since the pulse encoding module is not needed, the temperature sensing layer can be directly arranged inside the synaptic transistor, thereby eliminating the temperature sensor arranged outside the synaptic transistor in the prior art, and realizing a temperature intelligent sensing system with small volume and simple structure.

[0037] Further, by setting the polyimide substrate, the temperature intelligent sensing system can be attached to any designated position, greatly improving the convenience of the temperature intelligent sensing system. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 is a preparation flow chart of the temperature intelligent sensing system provided by the technical scheme of the present application;

[0039] Figure 2 is a preparation flow chart of S1 in an embodiment of the present application;

[0040] Figure 3 is a preparation flow chart of S2 in an embodiment of the present application;

[0041] Figure 4 is a device three-dimensional structure diagram obtained after the preparation process of Figure 3 is completed;

[0042] Figure 5 is a preparation flow chart of S3 in an embodiment of the present application;

[0043] Figure 6 is a device three-dimensional structure diagram obtained after the preparation process of Figure 5 is completed;

[0044] Figure 7 is a preparation flow chart of S4 in an embodiment of the present application;

[0045] Figure 8 is a device three-dimensional structure diagram obtained after the preparation process of Figure 7 is completed;

[0046] Figure 9 is a preparation flow chart of S5 in an embodiment of the present application;

[0047] Figure 10 is a device three-dimensional structure diagram obtained after the preparation process of Figure 9 is completed;

[0048] Figure 11 is a preparation flow chart of S6 in an embodiment of the present application;

[0049] Figure 12 is a device three-dimensional structure diagram obtained after the preparation process of Figure 11 is completed;

[0050] Figure 13 is a flow chart of a test method based on the temperature intelligent sensing system provided by the technical scheme of the present application;

[0051] Figure 14 is a mechanism diagram of generating a double electric layer in the temperature intelligent sensing system provided by the embodiment of the present application;

[0052] Figure 15 A voltage pulse signal waveform diagram generated by a temperature sensing layer in the temperature intelligent sensing system provided by the embodiment of the present application;

[0053] Figure 16 A synaptic current waveform diagram generated by the temperature intelligent sensing system provided by the embodiment of the present application with different infrared light intensities.

[0054] Reference signs:

[0055] 10 - substrate;

[0056] 20 - source electrode;

[0057] 30 - drain electrode;

[0058] 22 - source first structure;

[0059] 21 - source second structure;

[0060] 32 - drain first structure;

[0061] 31 - drain second structure;

[0062] 40 - gate electrode;

[0063] 42 - gate first structure;

[0064] 41 - gate second structure;

[0065] 50 - channel layer;

[0066] 60 - insulating protective layer;

[0067] 70 - electrolyte layer;

[0068] 80 - temperature sensing layer. DETAILED DESCRIPTION

[0069] As described in the background, the prior art temperature intelligent sensing system has the problems of complex structure and large size.

[0070] Therefore, the present application provides a temperature intelligent sensing system, and a preparation method and a test method of the system.

[0071] Before introducing the temperature intelligent sensing system provided by the technical scheme of the present application, the preparation method of the temperature intelligent sensing system is described.

[0072] Among them, Figure 1 is the preparation flow chart of the temperature intelligent sensing system provided by the technical scheme of the present application.

[0073] Please refer to Figure 1The preparation method of the temperature intelligent sensing system provided by the technical scheme of the present application comprises the following specific steps:

[0074] S1: providing a substrate.

[0075] S2: forming patterned source electrodes, drain electrodes and gate electrodes on the substrate respectively, wherein the source electrodes comprise source electrode first structures and source electrode second structures, the drain electrodes comprise drain electrode first structures and drain electrode second structures, and the gate electrodes comprise gate electrode first structures and gate electrode second structures.

[0076] S3: forming a patterned channel layer on the substrate, wherein the channel layer covers the source electrode first structures and the drain electrode first structures.

[0077] S4: forming a patterned insulating protective layer on the substrate, wherein the insulating protective layer comprises a barrier region, a first window region, a second window region, a third window region and a fourth window region, the first window region exposes the source electrode second structures, the second window region exposes the drain electrode second structures, the third window region exposes the channel layer and the gate electrode first structures, and the fourth window region exposes the gate electrode second structures.

[0078] S5: forming an electrolyte layer in the third window region.

[0079] S6: forming a temperature sensing layer in the fourth window region.

[0080] The preparation method of the temperature intelligent sensing system of the present application will be described in detail through the specific embodiments as follows:

[0081] As a specific embodiment, S1 provides a substrate, which specifically comprises the following steps:

[0082] In one embodiment, a clean glass plate is directly provided as the glass substrate.

[0083] Please refer to Figure 2 In another embodiment, S11: a polyimide reagent is spin-coated on the clean glass plate to obtain a polyimide substrate.

[0084] S12: the polyimide substrate is subjected to thermal annealing according to a set annealing temperature.

[0085] S13: a plasma-enhanced chemical vapor deposition process is adopted to form a silicon nitride layer and a silicon dioxide layer on the surface of the polyimide substrate after the annealing treatment, and a buffer layer composed of the silicon nitride layer and the silicon dioxide layer is formed, so as to finally obtain a flexible polyimide substrate. Figure 2 The preparation flowchart of S1 in an embodiment of the present application.

[0086] The flexible polyimide substrate has the beneficial effect that after the preparation of the temperature intelligent sensing system is completed, the temperature intelligent sensing system can be directly taken off from the glass plate and attached to any designated position through the bottom of the polyimide substrate, thereby greatly improving the convenience of the temperature intelligent sensing system.

[0087] It should be noted that during the process of spin-coating the polyimide reagent, the speed of spin-coating can be selected as 1500r / min-2000r / min to ensure that the thickness of the obtained polyimide layer meets the requirements.

[0088] Please refer to Figure 3 and Figure 4 , as a specific embodiment, S2 in the substrate 10 respectively form patterned source electrode 20, drain electrode 30 and gate electrode 40, specifically including:

[0089] S21: using sputtering PVD equipment first sputtering molybdenum or aluminum on the substrate 10.

[0090] S22: using sputtering PVD equipment again sputtering indium tin oxide on the substrate 10 to obtain a composite electrode layer.

[0091] S23: using a film applicator to spin-coat photoresist on the composite electrode layer.

[0092] S24: using a patterned mask and wet etching, the source electrode 20, drain electrode 30 and gate electrode 40 are respectively patterned. Among them, the source electrode 20 includes a source first structure 22 and a source second structure 21, the drain electrode 30 includes a drain first structure 32 and a drain second structure 31, and the gate electrode 40 includes a gate first structure 42 and a gate second structure 41. Figure 3 is the preparation flow chart of S2 in an embodiment of the present application. Figure 4 is the device three-dimensional structure diagram obtained after the preparation flow of Figure 3 is completed.

[0093] It should be noted that the sputtering thickness of molybdenum or aluminum is 150nm, and the sputtering thickness of indium tin oxide is 50nm. After spin-coating the photoresist, a pre-baking of 125℃ is also needed. The distance between the source first structure 22 and the drain first structure 32 is set to 80μm.

[0094] Please refer to Figure 5 and Figure 6 , as a specific embodiment, S3 in the substrate 10 form a patterned channel layer 50, specifically including:

[0095] S31: using sputtering PVD equipment to sputter channel semiconductor material on the substrate 10 to obtain a channel layer 50.

[0096] S32: patterning the channel layer 50 using a patterned mask and wet etching, the patterned channel layer 50 being on the source first structure 22 and the drain first structure 32. Figure 5 The preparation flow chart of S3 in an embodiment of the present application. Figure 6 The device structure diagram obtained after the preparation flow of Figure 5 The device structure diagram obtained after the preparation flow of

[0097] It should be added that the channel semiconductor material at least includes at least one or more of ZnO, InZnO and InGaZnO. The thickness of the channel layer 50 can be prepared as 60 nm to achieve the optimal carrier concentration in the channel layer 50.

[0098] Please refer to Figure 7 and Figure 8 As a specific embodiment, the patterned insulating protective layer 60 is formed on the substrate 10 in S4, which specifically includes:

[0099] S41: preparing the insulating protective layer 60 on the surface of the channel layer 50 by plasma-enhanced chemical vapor deposition process.

[0100] S42: punching the insulating protective layer 60 to form the first window area, the second window area, the third window area and the fourth window area using a patterned mask and dry etching technology. Figure 7 The preparation flow chart of S4 in an embodiment of the present application. Figure 8 The device structure diagram obtained after the preparation flow of Figure 7 The device structure diagram obtained after the preparation flow of

[0101] It should be added that the thickness of the insulating protective layer 60 is 200 nm.

[0102] Please refer to Figure 9 and Figure 10 As a specific embodiment, the electrolyte layer 70 is formed in the third window area in S5, which specifically includes:

[0103] S51: water bath heating and magnetic stirring of the ionic gel liquid for a first time.

[0104] S52: after the ionic gel liquid is magnetically stirred for the first time, the ionic gel liquid is stirred without heating for a second time.

[0105] S53: after the ionic gel liquid is stirred without heating for the second time, the ionic gel liquid is dropped on the third window area by a pipette to form the electrolyte layer 70. Figure 9The preparation flow chart of S5 in an embodiment of the present application. Figure 10 To complete the preparation flow of Figure 9 The device perspective structure diagram obtained after the preparation flow of

[0106] It should be added that if the substrate 10 is a polyimide substrate 10, before the ion gel liquid is dropped on the third window area by the pipette, the substrate 10 also needs to be placed in 45℃ water for 30 minutes, and then the polyimide substrate 10 is torn off from the glass plate and dried.

[0107] The ion gel liquid at least includes poly(vinylidene fluoride-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide, and the mass ratio of each is 1:4:7.5:7.5.

[0108] The temperature of the water bath heating can be set to 60℃, the first time can be set to 5 hours, and the second time can be set to 2 hours.

[0109] Please refer to Figure 11 and Figure 12 as a specific embodiment, the temperature sensing layer 80 is formed in the fourth window area in S6, specifically including:

[0110] S61: electrodes are deposited on both sides of the polyvinylidene fluoride film by spin coating to obtain the temperature sensing layer 80.

[0111] S62: The temperature sensing layer 80 is attached to the contact end of the gate second structure 41 exposed in the fourth window area, and the preparation of the temperature intelligent sensing system is completed. Figure 11 The preparation flow chart of S6 in an embodiment of the present application. Figure 12 To complete the preparation flow of Figure 11 The device perspective structure diagram obtained after the preparation flow of

[0112] It should be added that the thickness of the polyvinylidene fluoride film can be set to 30μm. The electrode material can be selected as multi-walled carbon nanotubes, and the spin coating speed can be selected as 300r / min, and the spin coating thickness can be selected as 2000nm.

[0113] The temperature intelligent sensing system provided by the technical scheme of the present application is introduced as follows:

[0114] Please refer to Figure 12 The temperature intelligent sensing system provided by the present application includes:

[0115] The synapse transistor includes:

[0116] The substrate 10;

[0117] a source electrode 20, a drain electrode 30 and a gate electrode 40 located on the substrate 10, the source electrode 20 comprising a source first structure 22 and a source second structure 21, the drain electrode 30 comprising a drain first structure 32 and a drain second structure 31, the gate electrode 40 comprising a gate first structure 42 and a gate second structure 41;

[0118] a channel layer 50 located on the source first structure 22 and the drain first structure 32;

[0119] an insulating protective layer 60 located on the substrate 10, the insulating protective layer 60 comprising a blocking area, a first window area, a second window area, a third window area and a fourth window area, the first window area exposing the source second structure 21, the second window area exposing the drain second structure 31, the third window area exposing the channel layer 50 and the gate first structure 42, and the fourth window area exposing the gate second structure 41;

[0120] an electrolyte layer 70 covering the third window area;

[0121] a temperature sensing layer 80 arranged to cover the fourth window area, the temperature sensing layer 80 being configured to generate a voltage pulse signal acting on the gate second structure 41 according to a change in ambient temperature based on pyroelectric effect.

[0122] By means of the above technical means, the temperature intelligent sensing system of the present application can achieve small size and simple structure. The specific reasons are as follows:

[0123] In the existing temperature intelligent sensing system, the temperature sensing layer 80 uses a mixture of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and carbon nanotubes as a temperature sensing material. This material can only generate a voltage signal when a temperature gradient is generated at both ends of the temperature sensing layer 80. This voltage signal needs to be encoded by a pulse encoder to obtain a voltage pulse signal applied to the synaptic transistor. Therefore, the existing temperature intelligent sensing system at least needs to be composed of a temperature sensor provided with a temperature sensing layer 80, a pulse encoder and a synaptic transistor. The temperature sensing layer 80 provided by the present application can directly generate a voltage pulse signal according to the change in ambient temperature based on pyroelectric effect, so it can be directly arranged at the gate of the synaptic transistor, thereby eliminating the pulse encoder and greatly simplifying the structure of the temperature sensor, achieving small size and simple structure of the temperature intelligent sensing system of the present application.

[0124] The temperature intelligent sensing system provided by the embodiment of the present application will be described in detail below through a specific embodiment:

[0125] As a specific embodiment, the temperature sensing layer is composed of at least polyvinylidene fluoride.

[0126] As a specific embodiment, the substrate comprises a polyimide substrate.

[0127] As a specific embodiment, the interval between the source first structure and the drain first structure is 80 μm.

[0128] As a specific embodiment, the channel layer is 60 nm in thickness to optimize the carrier concentration in the channel layer.

[0129] As a specific embodiment, the insulating protective layer is 200 nm in thickness.

[0130] As a specific embodiment, the electrolyte layer comprises an ionic gel liquid, which comprises at least poly (vinylidene fluoride-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis (trifluoromethylsulfonyl) imide, acetone and N, N-dimethylformamide, and the mass ratio of each is 1:4:7.5:7.5.

[0131] In summary, the temperature intelligent sensing system provided by the embodiments of the present application can directly generate a voltage pulse signal acting on the gate second structure when the ambient temperature changes through the temperature sensing layer composed of at least polyvinylidene fluoride, so that the temperature sensing layer can be directly arranged at the gate of the synaptic transistor, thereby eliminating the pulse encoder and greatly simplifying the structure of the temperature sensor, realizing the small size and simple structure of the temperature intelligent sensing system of the present application.

[0132] Further, by arranging the polyimide substrate, the temperature intelligent sensing system can be attached to any specified position, greatly improving the convenience of the temperature intelligent sensing system of the present application.

[0133] Figure 13 The technical solution of the present application provides a flowchart of a test method based on the temperature intelligent sensing system.

[0134] Please refer to Figure 13 The technical solution of the present application also provides a test method based on the temperature intelligent sensing system, and the specific steps of the method are as follows:

[0135] S71: A first bias voltage is applied to the source second structure and the drain second structure.

[0136] S72: The temperature sensing layer is irradiated by an infrared device.

[0137] S73: The current information between the source electrode and the drain electrode is recorded.

[0138] The following describes the testing principle of the temperature intelligent sensing system:

[0139] Please refer to Figure 12 、 Figure 14 、 Figure 15 、 Figure 16 When the temperature sensing layer 80 is irradiated by the infrared device, the polyvinylidene fluoride in the temperature sensing layer 80 will generate a voltage pulse signal due to heating. The voltage pulse signal will cause the ions in the electrolyte layer 70 to move directionally, so as to form a double electric layer at the intersection of the gate electrode 40 and the electrolyte layer 70 and at the intersection of the channel layer 50 and the electrolyte layer 70, thereby causing the electronic arrangement in the channel layer 50 to form a conductive channel. Because a first bias is applied to the source second structure 21 and the drain second structure 31, a synaptic current will be generated at the source second structure 21 and the drain second structure 31 under the action of the bias. At the same time, because the ion movement is slow, the conductive channel in the channel layer 50 will not disappear immediately after the temperature is removed, so the synaptic current will not disappear immediately either, thereby realizing the learning and memory of the temperature intelligent sensing system to the temperature by recording the synaptic current size at different temperatures. Figure 14 The mechanism diagram of the double electric layer generated in the temperature intelligent sensing system provided by the embodiment of the present application. Figure 15 The voltage pulse signal waveform diagram generated by the temperature sensing layer in the temperature intelligent sensing system provided by the embodiment of the present application. Figure 16 The synaptic current waveform diagram generated by the temperature intelligent sensing system with different infrared light intensities provided by the embodiment of the present application.

[0140] Although the present application is disclosed as above, the present application is not limited to this. Any person skilled in the art, without departing from the spirit and scope of the present application, can make various changes and modifications, therefore the protection scope of the present application should be limited by the scope defined by the claims.

Claims

1. A temperature intelligent sensing system, characterized in that, Comprising: a synapse transistor, the synapse transistor comprising: a substrate; a source electrode, a drain electrode and a gate electrode on the substrate, the source electrode comprising a source first structure and a source second structure, the drain electrode comprising a drain first structure and a drain second structure, the gate electrode comprising a gate first structure and a gate second structure; a channel layer on the source first structure and the drain first structure; an insulating protection layer on the substrate, the insulating protection layer comprising a blocking region, a first window region, a second window region, a third window region and a fourth window region, the first window region exposing the source second structure, the second window region exposing the drain second structure, the third window region exposing the channel layer and the gate first structure, the fourth window region exposing the gate second structure; an electrolyte layer covering the third window region; a temperature sensing layer arranged to cover the fourth window region, the temperature sensing layer generating a voltage pulse signal acting on the gate second structure according to a change in ambient temperature based on a pyroelectric effect; the electrolyte layer comprising an ionic gel liquid, the ionic gel liquid comprising at least poly(vinylidene-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide, and the poly(vinylidene-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide each having a mass ratio of 1:4:7.5:7.

5.

2. The temperature intelligent sensing system of claim 1, wherein, the temperature sensing layer is at least composed of polyvinylidene fluoride.

3. The temperature intelligent sensing system of claim 1, wherein, the substrate comprises a polyimide substrate.

4. The temperature intelligent sensing system of claim 1, wherein, a spacing between the source first structure and the drain first structure is 80 μm.

5. A method of preparing a temperature intelligent sensing system, characterized by, Comprising: providing a substrate; forming patterned source, drain and gate electrodes on the substrate, the source electrode comprising a source first structure and a source second structure, the drain electrode comprising a drain first structure and a drain second structure, the gate electrode comprising a gate first structure and a gate second structure; forming a patterned channel layer on the substrate, the channel layer covering the source first structure and the drain first structure; forming a patterned insulating protection layer on the substrate, the insulating protection layer comprising a blocking region, a first window region, a second window region, a third window region and a fourth window region, the first window region exposing the source second structure, the second window region exposing the drain second structure, the third window region exposing the channel layer and the gate first structure, the fourth window region exposing the gate second structure; forming an electrolyte layer in the third window area, the electrolyte layer comprising an ionic gel liquid, the ionic gel liquid comprising at least poly(vinylidene fluoride-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide, and the mass ratio of poly(vinylidene fluoride-co-hexafluoropropylene), 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, acetone and N,N-dimethylformamide is 1:4:7.5:7.5 respectively; forming a temperature sensing layer in the fourth window area.

6. The method for preparing the intelligent temperature sensing system according to claim 5, characterized in that, forming an electrolyte layer in the third window area, specifically comprising: water bath heating and magnetic stirring the ionic gel liquid for a first time; after the ionic gel liquid is stirred for the first time, the ionic gel liquid is stirred without heating for a second time; after the ionic gel liquid is stirred without heating for the second time, the ionic gel liquid is dropped on the third window area by a pipette to form the electrolyte layer.

7. A test method based on the temperature intelligent perception system according to any one of claims 1 to 4, characterized in that, comprising: applying a first bias voltage on the source second structure and the drain second structure; irradiating the temperature sensing layer by an infrared device; recording the current information between the source electrode and the drain electrode.

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