A light emitting diode, a manufacturing method thereof, a light emitting module, and a light emitting device

Abstract

This invention provides a light-emitting diode (LED), its manufacturing method, and a light-emitting module and device. In the LED of this invention, the epitaxial structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. The active layer and the second conductivity type semiconductor layer sequentially cover at least a portion of the sidewalls of the first conductivity type semiconductor layer. This epitaxial structure feature reduces defects at the sidewalls of the epitaxial structure, reduces non-radiative recombination, and improves the luminous efficiency of the epitaxial structure. Furthermore, the active layer and the second conductivity type semiconductor layer also cover the sidewalls of the first conductivity type semiconductor layer, thereby forming radiative recombination regions at the sidewalls, further improving the light extraction efficiency. In manufacturing the LED, the first surface of the growth substrate is formed into a patterned surface. The patterned structure includes a raised structure and a recessed region complementary to the raised structure. After growing the epitaxial structure on the growth substrate, the growth substrate and the epitaxial structure formed in the recessed region are removed. The remaining epitaxial structure above the raised structure forms the LED, reducing sidewall defects and non-radiative recombination caused by these defects, thereby improving the luminous efficiency of the LED.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, specifically to a light-emitting diode, its manufacturing method, and a light-emitting module and device. Background Technology

[0002] With technological advancements, Micro-LED (Micro Light Emitting Diode) displays have become widely used in backlighting, VR screens, mobile phone displays, and small displays. In particular, Micro-LED chip display technology, used in AR and VR micro-displays, offers unparalleled advantages over other display technologies, such as high brightness and high pixel density that exceed the theoretical limits of other micro-display technologies. Micro-LED manufacturing requires highly precise and advanced technologies, including nanofabrication and thin-film transfer, epitaxial growth, and electrode deposition—key steps that are crucial to the performance of the light-emitting diodes.

[0003] The manufacturing of Micro-LEDs in existing technologies typically includes the following steps: 1. Epitaxial growth: Depositing compound semiconductor materials such as gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum gallium indium phosphide (AlGaInP) onto a sapphire, gallium nitride, or gallium arsenide substrate to form an epitaxial layer with light-emitting properties; 2. Thin-film transfer: Separating the epitaxial layer from the substrate and transferring it onto a flexible or stretchable substrate, such as a polyimide film; 3. Electrode deposition: Depositing metal electrodes on the surface of the thin film. These electrodes supply power to the LED and generate light; 4. Device definition: Patterning the thin film using techniques such as photolithography and etching to define individual micro-LED devices. This process involves precise control of the LED's geometry and size; 5. Chip separation: Separating the defined micro-LED chips from the thin film, typically using laser cutting or a dicing machine; 6. Fixing: Placing the micro-LED chips on a circuit board or other substrate and fixing them with adhesive or solder.

[0004] As Micro LEDs become smaller, surface recombination on the sidewalls increases, leading to a higher non-radiative recombination rate and a sharp drop in luminous efficiency. As mentioned above, the current definition of Micro LED chips uses dry etching technology, which exacerbates sidewall defects during the etching process, resulting in a more significant decrease in brightness. Summary of the Invention

[0005] In view of the problems existing in the prior art in the manufacturing of Micro LED chips, this application provides a light-emitting diode and its manufacturing method, as well as a light-emitting module and a light-emitting device. In the light-emitting diode of the present invention, the epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The active layer and the second conductivity type semiconductor layer wrap around the sidewall of the first conductivity type semiconductor layer. The light-emitting diode of the present invention has reduced sidewall defects, increased radiative recombination rate and improved brightness.

[0006] To achieve the above and other related objectives, the present invention provides a light-emitting diode, comprising:

[0007] An epitaxial structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially, wherein the active layer and the second conductivity type semiconductor layer sequentially cover at least a portion of the sidewalls of the first conductivity type semiconductor layer.

[0008] Another aspect of the present invention provides a method for manufacturing a light-emitting diode, comprising the following steps:

[0009] A growth substrate is provided, having a first surface and a second surface disposed opposite to each other;

[0010] A patterned structure is formed on the first surface side of the growth substrate, the patterned structure including periodically arranged protrusions and recessed regions complementary to the protrusions.

[0011] A first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially grown on the growth substrate to form an epitaxial structure. The epitaxial structure is formed at least above the protrusion structure, and in the epitaxial structure above the protrusion structure, the active layer and the second conductivity type semiconductor layer cover at least a portion of the sidewalls of the first conductivity type semiconductor layer.

[0012] Remove the growth substrate and the epitaxial structure of the recessed region.

[0013] Another aspect of the present invention provides a light-emitting module, which includes a substrate and a light-emitting unit fixed to the substrate, the light-emitting unit including a light-emitting diode provided by the present invention.

[0014] Another aspect of the present invention provides a light-emitting device comprising a plurality of light-emitting elements, wherein the light-emitting elements include at least one light-emitting module provided by the present invention.

[0015] As described above, the light-emitting diode, its manufacturing method, light-emitting module, and light-emitting device provided by the present invention have at least the following beneficial technical effects:

[0016] In the light-emitting diode of the present invention, the epitaxial structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially, wherein the active layer and the second conductivity type semiconductor layer sequentially cover at least a portion of the sidewalls of the first conductivity type semiconductor layer. This epitaxial structure feature reduces defects at the sidewalls of the epitaxial structure, reduces non-radiative recombination of the epitaxial structure, and improves the luminous efficiency of the epitaxial structure. Furthermore, the active layer and the second conductivity type semiconductor layer also cover the sidewalls of the first conductivity type semiconductor layer, thereby forming radiative recombination regions at the sidewalls, further improving the light extraction efficiency.

[0017] In manufacturing the aforementioned light-emitting diode (LED), the present invention forms a patterned surface on the first surface of the growth substrate. The patterned structure includes raised structures and recessed regions complementary to the raised structures. After growing an epitaxial structure on the growth substrate, the growth substrate and the epitaxial structure formed in the recessed regions are removed. The remaining epitaxial structure above the raised structures forms the LED. As described above, the method of the present invention does not use dry etching to divide the LED. Instead, it forms individual LEDs by stripping the substrate and removing the epitaxial structure in the recessed regions using a laser. Therefore, sidewall defects caused by dry etching are reduced, and non-radiative recombination caused by these defects is reduced, thereby improving the luminous efficiency of the epitaxial structure.

[0018] In addition, the above-mentioned patterned structure of the growth substrate can ensure that the epitaxial structure layers are grown in a stacked manner according to their shapes in the raised structure and the recessed region, respectively, and will not grow laterally between the raised structure and the recessed region. This allows the epitaxial structure to form a stacked structure that covers the sidewall of the raised structure along the sidewall portion of the raised structure, which facilitates the subsequent separation of the epitaxial structure to form an independent light-emitting diode. Attached Figure Description

[0019] Figure 1 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 1 of the present invention.

[0020] Figure 2 The diagram shows a schematic representation of a light-emitting diode provided in an optional embodiment.

[0021] Figure 3 The diagram shown is a flowchart of the LED manufacturing method provided in Embodiment 2 of the present invention.

[0022] Figure 4 The diagram shows the structure of the growth substrate.

[0023] Figure 5 The diagram shows an epitaxial structure grown on a growth substrate.

[0024] Figure 6a and Figure 6b Displayed as Figure 5A magnified structural diagram of part A in the middle.

[0025] Figure 7 This diagram illustrates the bonding of a transfer substrate to an epitaxial structure.

[0026] Figure 8 The diagram shows a structural schematic of the stripped growth substrate.

[0027] Figure 9 This diagram shows the epitaxial structure corresponding to the recessed region of the growth substrate after removal.

[0028] Figure 10 The diagram shows a structural schematic of a growth substrate provided in an optional embodiment.

[0029] Figure 11 Displayed as in Figure 10 A schematic diagram of an epitaxial structure grown on a growth substrate is shown.

[0030] Figure 12 Displayed as Figure 11 A magnified structural diagram of part B.

[0031] Figure 13 The diagram shown is a schematic diagram of the structure of the light-emitting module provided in Embodiment 3 of the present invention.

[0032] Figure 14 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment 4 of the present invention.

[0033] Figure Labels

[0034] 100, Light-emitting diode; 110 (110'), Epitaxial structure; 111, Semiconductor layer of first conductivity type; 112, Active layer; 113, Semiconductor layer of second conductivity type; 120, Insulating protective layer; 130, Reflective structure; 140, Electrode structure; 141, First electrode; 142, Second electrode.

[0035] 200, Growth substrate; 201, Raised structure; 202, Recessed area.

[0036] 300, Transfer substrate; 301, Adhesive layer.

[0037] 400, Light-emitting module; 401, Substrate; 402, Light-emitting unit; 403, CMOS device layer; 404, Circuit layer.

[0038] 500. Light-emitting device; 501. Light-emitting body. Detailed Implementation

[0039] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0040] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this invention, and the layout of the components may also be more complex.

[0041] Example 1

[0042] This embodiment provides a light-emitting diode, such as Figure 1 As shown, the light-emitting diode 100 of this embodiment includes an epitaxial structure 110, which includes components in a first direction (i.e., Figure 1 A first conductivity type semiconductor layer 111, an active layer 112, and a second conductivity type semiconductor layer 113 are sequentially stacked in the Y direction (in the middle direction). In the second direction (i.e., the X direction shown in the figure) intersecting the first direction, the active layer 112 and the second conductivity type semiconductor layer 113 sequentially cover at least a portion of the sidewalls of the first conductivity type semiconductor layer 111. That is, as shown... Figure 1 As shown, the active layer 112 is not only stacked above the first conductivity type semiconductor layer 111 in the Y direction, but also stacked and covering the sidewalls of the first conductivity type semiconductor layer 111 in the X direction. Similarly, the second conductivity type semiconductor layer 113 is not only stacked above the active layer 112 in the Y direction, but also stacked and covering the sidewalls of the active layer 112 in the X direction. Thus... Figure 1 As shown, the epitaxial structure 110 includes an electron-hole recombination region in the Y direction and an electron-hole recombination region in the X direction, thus increasing the area of ​​the electron-hole recombination region and improving the luminous efficiency.

[0043] like Figure 1 The diagram shows that the active layer 112 completely covers the sidewall of the first conductivity type semiconductor layer 111, and the second conductivity type semiconductor layer 113 completely covers the sidewall of the active layer 112. It can be understood that the active layer 112 may cover part of the sidewall of the first semiconductor layer, and the second conductivity type semiconductor layer 113 may partially cover the sidewall of the active layer 112.

[0044] Figure 1The sidewalls of the epitaxial structure 110 of the light-emitting diode 100 shown form the above-mentioned stacked structure. The sidewalls are formed without the need for dry etching or other steps, and the structural defects of the sidewalls are relatively reduced, which reduces the non-recombination radiation at the sidewall defects. Therefore, the light extraction effect of the light-emitting diode 100 can be further improved.

[0045] In this embodiment, the light-emitting diode 100 is a Micro LED with a size of less than 50 μm. Further, the size of the light-emitting diode 100 is between 10 μm and 20 μm, meaning the side length of the light-emitting diode 100 is between 10 μm and 20 μm. The light-emitting diode 100 can be a commonly used LED such as a blue LED, green LED, yellow LED, or red LED.

[0046] Taking a red LED as an example, the first conductivity type semiconductor layer 111 and the second conductivity type semiconductor layer 113 of the epitaxial structure 110 are a P-type layer and an N-type layer, respectively. This embodiment uses a P-type semiconductor layer 111 and an N-type semiconductor layer 113 as an example. The epitaxial structure 110 is an AlGaInP-based red LED epitaxial structure, where the P-type layer 111 can be a P-type doped AlInP layer, such as a Mg-doped AlInP layer; the N-type layer 113 is an N-type doped AlGaInP layer; and the active layer 112 can be a multiple quantum well structure composed of alternating AlGaInP quantum well layers and GaInP quantum barrier layers. The multiple quantum well structure can include alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 1 to 5 periods. Optionally, the multiple quantum well structure includes alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 2 periods. Optionally, the thickness of the epitaxial structure 110 is less than or equal to 2 μm, and the thickness of the multiple quantum well structure is 100 nm to 400 nm.

[0047] Similarly, Figure 1 As shown, the light-emitting diode 100 also includes an insulating protective layer 120 and a reflective structure 130. The insulating protective layer 120 covers the entire epitaxial structure 110, that is, it covers the upper and lower surfaces and sidewalls of the epitaxial structure 110. The reflective structure 130 is formed outside the insulating protective layer 120, covering the remaining insulating protective layer 120 except for the light-emitting side of the light-emitting diode 100. The insulating protective layer 120 can be SiO2 or SiN. xThe reflective structure 130 can be a combination of one or more inorganic insulating materials such as SiO2 and SiO2, or an organic insulating material such as resin, to block impurities such as moisture and dust. The reflective structure 130 can be a DBR structure formed by alternating layers of materials with different refractive indices, such as a DBR structure with alternating SiO2 / TiO2 layers. The formation of the reflective structure 130 allows as much of the light radiated by the epitaxial structure 110 as possible to exit from the light-emitting surface, improving the light extraction effect of the light-emitting diode 100.

[0048] Similarly, refer to Figure 1 The light-emitting diode 100 also includes an electrode structure 140 formed above the DBR structure, comprising a first electrode 141 and a second electrode 142. Specifically, the electrode structure 140 is formed above the DBR structure on one side of the second conductivity type semiconductor layer 113, and the side of the first conductivity type semiconductor layer 111 is the light-emitting side of the light-emitting diode 100. The first electrode 141 penetrates the DBR structure, the insulating protective layer 120, the second conductivity type semiconductor layer 113, and the active layer 112, and is connected to the first conductivity type semiconductor layer 111. The second electrode 142 penetrates the DBR structure and the insulating protective layer 120 and is connected to the second conductivity type semiconductor layer 113. It is understood that, in order to improve the lateral diffusion effect of the current, a current spreading layer can also be formed between the first conductivity type semiconductor layer 111 and the first electrode 141, and between the second conductivity type semiconductor layer 113 and the second electrode 142, to improve the lateral current spreading and improve the light emission uniformity of the light-emitting diode 100.

[0049] Reference Figure 2 In an optional embodiment of this invention, the electrode structure 140 is formed on one side of the first conductive semiconductor layer 111, specifically above the reflective structure 130 (DBR) on the side of the first conductive semiconductor layer 111, and the side of the second conductive semiconductor layer 113 serves as the light-emitting side of the light-emitting diode 100. The first electrode 141 penetrates the DBR structure and the insulating protective layer 120 and is connected to the first conductive semiconductor layer 111. The second electrode 142 penetrates the DBR structure, the insulating protective layer 120, the second conductive semiconductor layer 113, and the active layer 112, and is connected to the second conductive semiconductor layer 113.

[0050] Example 2

[0051] This embodiment provides a method for manufacturing a light-emitting diode, such as... Figure 3 As shown, the method includes the following steps:

[0052] S100: Provides a first growth substrate having a first surface and a second surface disposed opposite to each other;

[0053] S200: A patterned structure is formed on the first surface side of the growth substrate, the patterned structure including periodically arranged protrusions and recessed regions complementary to the protrusions.

[0054] The growth substrate 200 can be any substrate suitable for growing the epitaxial structure 110, such as a silicon substrate, silicon carbide substrate, sapphire substrate, gallium arsenide substrate, etc. Taking the growth of a red light epitaxial structure as an example, the growth substrate 200 is selected as a gallium arsenide substrate.

[0055] The growth substrate 200 is patterned from the first surface side to form a patterned structure on the first surface side, such as... Figure 4 As shown, the patterned structure includes protrusions 201 and recessed regions 202 complementary to the protrusions 201. The protrusions 201 are periodically arranged and spaced apart by the recessed regions 202. The longitudinal (i.e., along the thickness direction of the growth substrate 200) cross-section of the protrusions 201 is rectangular, trapezoidal, inverted trapezoidal, etc., as illustrated in this embodiment. Figure 4 As shown, a raised structure 201 with an inverted trapezoidal longitudinal cross-section is used as an example. The shape and size of the top surface of this raised structure 201 correspond to the size of the subsequently formed light-emitting diode 100. For example, for a light-emitting diode 100 with a side length between 10 μm and 20 μm, the side length D1 of the top surface of the raised structure 201 is also between 10 μm and 20 μm. The height of the raised structure 201 is between 2 μm and 10 μm, and further between 4 μm and 6 μm. The spacing between adjacent raised structures 201 is between 5 μm and 20 μm, and further between 10 μm and 15 μm. The spacing of the protrusions 201, i.e. the size of the recessed region 202, ensures that when the epitaxial structure 110 is grown on the growth substrate 200, the epitaxial structure 110 can be grown in a conformal stacked manner between the protrusions 201 and the recessed region 202, and will not grow laterally between the protrusions 201 and the recessed region 202. This allows the epitaxial structure 110 to form a stacked structure that covers the sidewall of the protrusions 201 in the sidewall portion of the protrusions 201.

[0056] S300: A first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially grown on the growth substrate to form an epitaxial structure. The epitaxial structure is formed at least above the protrusion structure, and in the epitaxial structure above the protrusion structure, the active layer and the second conductivity type semiconductor layer cover at least a portion of the sidewalls of the first conductivity type semiconductor layer.

[0057] like Figure 5As shown, an epitaxial structure 110 is grown on the first surface side of the patterned growth substrate 200. Taking a red-light epitaxial structure as an example, a P-type layer—a P-type doped AlInP layer, such as a Mg-doped AlInP layer—is grown first. Due to the formation of the aforementioned protrusion structure 201, the P-type layer forms at least partial coverage at the sidewalls of the protrusion structure 201. Then, an active layer 112 is formed above the P-type layer, for example, by alternately growing AlGaInP quantum well layers and AlGaInP quantum barrier layers to form a multiple quantum well structure. The thickness of the multiple quantum well structure is 100 nm to 400 nm. The multiple quantum well structure may include alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 1 to 5 cycles. Optionally, the multiple quantum well structure may include alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 2 cycles. Similarly, the active layer 112 at least partially covers the P-type layer at its sidewalls. Then, an N-type layer, such as an AlGaInP layer, is grown above the active layer 112. The thickness of the resulting epitaxial structure 110 is less than or equal to 2 μm.

[0058] like Figure 6a As shown, in an optional embodiment, the epitaxial structure 110 of the protruding structure 201 and the recessed region 202 is a discontinuous structure. In this case, the active layer 112 at the sidewall of the epitaxial structure 110 partially covers the sidewall of the P-type layer, and the N-type layer covers the active layer 112. Figure 6b As shown, in another optional embodiment, the epitaxial structure 110 forms a continuous structure in the protruding structure 201 and the recessed region 202, and the active layer 112 completely covers the P-type layer and the N-type layer completely covers the active layer 112 at the sidewall.

[0059] S300: Remove the growth substrate and the epitaxial structure of the recessed region.

[0060] like Figure 7 As shown, a transfer substrate 300 is first provided, on which an adhesive layer 301 is formed. Optionally, the transfer substrate 300 can be a glass substrate, ceramic substrate, sapphire substrate, or other substrate suitable for transfer. In this embodiment, a sapphire substrate is used as an example. An adhesive layer 301 is formed on one side of the sapphire substrate. This adhesive layer 301 can be, for example, a laser-degradable or thermally degradable tape or adhesive. The adhesive layer 301 on the transfer substrate 300 is aligned with the epitaxial structure 110 on the growth substrate 200 and adhered to the epitaxial structure 110. Then, as... Figure 8As shown, the growth substrate 200 is peeled off, for example, by selective wet etching or laser lift-off. After the growth substrate 200 is peeled off, the epitaxial structure 110 adheres to the transfer substrate 300. At this time, the epitaxial structure 110 includes the epitaxial structure portion corresponding to the protrusion structure 201 and the epitaxial structure portion 110' corresponding to the recessed region 202. The epitaxial structure portion corresponding to the protrusion structure 201 is the epitaxial structure 110 required to finally form the light-emitting diode 100. Therefore, the epitaxial structure portion 110' corresponding to the recessed region 202 is then removed. In this embodiment, the adhesive layer 301 is a laser-degradable adhesive layer. Therefore, as... Figure 9 As shown, the adhesive layer 301 between the epitaxial structure portion 110' corresponding to the recessed region 202 and the transfer substrate 300 is locally irradiated with a laser, causing the colloid in this part to decompose, and the epitaxial structure portion 110' corresponding to the recessed region to fall off, thereby obtaining the desired epitaxial structure 110.

[0061] As described above, during the formation of the epitaxial structure 110 of the light-emitting diode 100, methods such as dry etching are not used to etch the epitaxial structure 110 to define the size of the light-emitting diode 100. Instead, the size is achieved through the definition of the pattern structure of the growth substrate 200, the growth of the epitaxial structure 110, and related removal processes. This process avoids sidewall defects caused by dry etching, such as rough sidewalls, partial missing sides, or incomplete etching that leaves unnecessary sidewalls, thereby reducing non-radiative recombination at the sidewalls and improving light extraction efficiency. Furthermore, as mentioned above, the active layer 112 and the N-type layer cover at least part of the sidewalls of the P-type layer, thus forming electron-hole recombination regions at the sidewalls, increasing the light radiation area, and improving the luminous efficiency of the light-emitting diode 100.

[0062] In an optional embodiment, before providing the transfer substrate 300 after the epitaxial structure 110 is grown, the step of forming an insulating layer, a reflective structure 130, and an electrode structure 140 on the epitaxial structure 110 is further included. The insulating layer covers the surface and sidewalls of the epitaxial structure 110, and the reflective structure 130 covers the insulating layer. At this time, the electrode structure 140 is formed on the reflective structure 130 on the side of the second conductivity type semiconductor layer. After removing the growth substrate 200 and the epitaxial structure portion 110' corresponding to the recessed region 202, the step of forming an insulating layer on the first conductivity type semiconductor layer 111 is further included. At this time, the side of the first conductivity type semiconductor layer 111 is the light-emitting side. Finally, as shown in the figure... Figure 1 The light-emitting diode 100 shown is shown.

[0063] In another alternative embodiment, before providing the transfer substrate 300 after the epitaxial structure 110 is grown, an insulating protective layer 120 is first formed on the surface and sidewalls of the epitaxial structure 110, and then the transfer substrate 300 is adhered to the epitaxial structure 110. After removing the growth substrate 200 and the portion of the epitaxial structure 110 corresponding to the recessed region 202, an insulating protective layer 120 and a reflective structure 130 are formed on the exposed side of the first conductivity type semiconductor layer 111 of the epitaxial structure 110, and then an electrode structure 140 is formed. At this time, the side of the second conductivity type semiconductor layer of the epitaxial structure 110 is the light-emitting side. Finally, as shown in the figure... Figure 2 The light-emitting diode 100 shown is shown.

[0064] In another optional embodiment of this example, such as Figure 10 As shown, the growth substrate 200 also forms a protrusion structure 201 and a recessed region 202, wherein the longitudinal cross-section of the protrusion structure 201 is trapezoidal. Figure 11 An epitaxial structure 110 is grown on the patterned side of the growth substrate 200, and the epitaxial structure 110 forms a continuous structure above the growth substrate 200. For example... Figure 12 As shown, the epitaxial structure 110 includes a first conductivity type semiconductor layer 111, an active layer 112, and a second conductivity type semiconductor layer sequentially stacked from the growth substrate 200. The epitaxial structure 110 completely covers the sidewalls of the protrusion structure 201. Therefore, after removing the growth substrate 200 and the epitaxial structure portion 110' corresponding to the recessed region 202, the epitaxial structure 110 also forms a structure in which the active layer 112 covers the first conductivity type semiconductor layer 111.

[0065] Example 3

[0066] This embodiment provides a light-emitting module, such as Figure 13 As shown, the light-emitting module 400 includes a substrate 401 and a plurality of light-emitting units 402 fixed to the substrate. In this embodiment, the light-emitting unit 402 includes at least one light-emitting diode 100 provided in Embodiment 1. The substrate 401 may be a substrate having a CMOS device layer 403 formed thereon, and also has a circuit layer 404 connected to the CMOS device layer 403. The light-emitting units 402 are connected to the CMOS device layer 403 via the circuit layer 404, thereby realizing the control of the light-emitting units.

[0067] Example 4

[0068] This embodiment provides a light-emitting device 500, which includes a plurality of light-emitting elements 501. Each light-emitting element 501 includes at least one light-emitting module 400 provided in Embodiment 4, and the light-emitting modules 400 are spliced ​​together. The light-emitting device 500 may also include a structure, such as a housing, that protects and supports the light-emitting modules 400.

[0069] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a light-emitting diode, characterized in that, Includes the following steps: A growth substrate is provided, having a first surface and a second surface disposed opposite to each other; A patterned structure is formed on the first surface side of the growth substrate, the patterned structure including periodically arranged protrusions and recessed regions complementary to the protrusions. A first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially grown on the first surface of the growth substrate to form an epitaxial structure. The epitaxial structure is formed at least above the protrusion structure, and in the epitaxial structure above the protrusion structure, the active layer and the second conductivity type semiconductor layer cover at least a portion of the sidewalls of the first conductivity type semiconductor layer. Remove the growth substrate and the epitaxial structure of the recessed region; The side length of the top surface of the longitudinal section of the protruding structure is between 10 μm and 20 μm, the height of the protruding structure is between 2 μm and 10 μm, the spacing between adjacent protruding structures is between 5 μm and 20 μm, and the longitudinal section shape of the protruding structure is a trapezoidal structure or an inverted trapezoidal structure.

2. The method for manufacturing a light-emitting diode according to claim 1, characterized in that, Removing the epitaxial structure from the growth substrate and the recessed region specifically includes: A transfer substrate is provided, wherein an adhesive layer is disposed on the transfer substrate; The adhesive layer is bonded to the epitaxial structure; Laser ablation of the growth substrate; The adhesive layer corresponding to the recessed area is locally irradiated with a laser to remove the epitaxial structure of the recessed area.

3. The method for manufacturing a light-emitting diode according to claim 1, characterized in that, The process also includes: after the epitaxial structure is formed but before the growth substrate is removed. An insulating protective layer is formed on the top and sidewalls of the extension structure above the protruding structure; A reflective structure is formed above the insulating protective layer; An electrode structure is formed above the reflective structure, the electrode structure including a first electrode connected to the first conductivity type semiconductor layer and a second electrode connected to the second conductivity type semiconductor layer.

4. The method for manufacturing a light-emitting diode according to claim 1, characterized in that, After removing the growth substrate and the epitaxial structure of the recessed region, the method further includes: An insulating protective layer is formed on the top and sidewalls of the extended structure corresponding to the retained protrusion structure; A reflective structure is formed above the insulating protective layer; An electrode structure is formed above the reflective structure, the electrode structure including a first electrode connected to the first conductivity type semiconductor layer and a second electrode connected to the second conductivity type semiconductor layer.

5. A light-emitting diode manufactured by the light-emitting diode manufacturing method according to any one of claims 1 to 4, characterized in that, The structure includes an epitaxial structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially in a first direction, wherein in a second direction intersecting the first direction, the active layer and the second conductivity type semiconductor layer sequentially cover at least a portion of the sidewalls of the first conductivity type semiconductor layer.

6. The light-emitting diode according to claim 5, characterized in that, It also includes an insulating protective layer that covers the surface of the epitaxial structure.

7. The light-emitting diode according to claim 5, characterized in that, It also includes an electrode structure formed on one side of the first conductivity type semiconductor layer, and the side of the second conductivity type semiconductor layer opposite to the first conductivity type semiconductor layer is the light-emitting side of the light-emitting diode; The electrode structure includes: a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer.

8. The light-emitting diode according to claim 5, characterized in that, It also includes an electrode structure formed on one side of the second conductivity type semiconductor layer, and the first conductivity type semiconductor layer opposite to the second conductivity type semiconductor layer is the light-emitting side of the light-emitting diode. The electrode structure includes: a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer.

9. The light-emitting diode according to claim 7 or 8, characterized in that, It also includes a reflective structure that covers the surface of the epitaxial structure except for the light-emitting side.

10. A light-emitting module, characterized in that, The device includes a substrate and a light-emitting unit fixed to the substrate, wherein the light-emitting unit includes at least one light-emitting diode as described in any one of claims 5 to 9.

11. The light-emitting module according to claim 10, characterized in that, A CMOS device layer and a circuit layer connected to the CMOS device layer are formed in the substrate, and the light-emitting unit is connected to the CMOS device layer through the circuit layer.

12. A light-emitting device, characterized in that, It includes a plurality of light-emitting elements, wherein the light-emitting elements include at least one light-emitting module as described in claim 10 or 11.

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