Infrared glass large-angle multi-band optical window and manufacturing method thereof

Abstract

The present invention discloses an infrared glass large-angle multi-band optical window and a manufacturing method thereof, relating to the field of optical coating. The window comprises a substrate, wherein the upper and lower surfaces of the substrate are sequentially vapor-deposited with a first YBF3 film, a first ZnS film, a second YBF3 film, a second ZnS film, a third YBF3 film, a third ZnS film, a fourth YBF3 film, a fourth ZnS film, a fifth YBF3 film, a fifth ZnS film, a sixth YBF3 film, a sixth ZnS film, a seventh YBF3 film, a seventh ZnS film, an eighth YBF3 film, an eighth ZnS film, a ninth YBF3 film, a ninth ZnS film, a tenth YBF3 film, and an AF film. The present invention can obtain an optical window with a light transmittance greater than 85% in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band (within the range of 0°-60°) and a high water drop angle.

Description

Technical Field

[0001] The present application relates to the field of optical coating, and in particular to an infrared glass large-angle multi-band optical window and a manufacturing method thereof. Background Art

[0002] With the advancement of modern optical technology, the demand for optical windows with high transmittance is growing, particularly in high-end applications such as military, aerospace, surveillance, and optical instrumentation. Traditional optical window materials often only achieve high transmittance in specific wavelength bands and cannot meet the demand for transmittance in multiple wavelength bands. Furthermore, optical windows are susceptible to contamination from dust, oil, and other factors during use, which can affect optical performance and require frequent cleaning, increasing maintenance costs. Summary of the Invention

[0003] In order to improve the problem that optical windows in related technologies are difficult to meet the requirements of multi-band high transmittance and are easily contaminated, the present application provides an infrared glass large-angle multi-band optical window and a manufacturing method thereof.

[0004] In a first aspect, the present application provides an infrared glass large-angle multi-band optical window adopts the following technical solution: a multi-band optical window, comprising a substrate, wherein the upper and lower surfaces of the substrate are sequentially evaporated with a first YBF3 film, a first ZnS film, a second YBF3 film, a second ZnS film, a third YBF3 film, a third ZnS film, a fourth YBF3 film, a fourth ZnS film, a fifth YBF3 film, a fifth ZnS film, a sixth YBF3 film, a sixth ZnS film, a seventh YBF3 film, a seventh ZnS film, an eighth YBF3 film, an eighth ZnS film, a ninth YBF3 film, a ninth ZnS film, a tenth YBF3 film, and an AF film from the inside out;

[0005] The thickness of the first YBF3 film is 48.78±2% nm, the thickness of the first ZnS film is 23.59±2% nm, the thickness of the second YBF3 film is 109.07±2% nm, the thickness of the second ZnS film is 27.14±2% nm, the thickness of the third YBF3 film is 43.53±2% nm, the thickness of the third ZnS film is 177.33±2% nm, the thickness of the fourth YBF3 film is 41.91±2% nm, the thickness of the fourth ZnS film is 26.77±2% nm, the thickness of the fifth YBF3 film is 84.69±2% nm, the thickness of the fifth ZnS film is 9.79±2 % nm, the thickness of the sixth YBF3 film is 89.95±2% nm, the thickness of the sixth ZnS film is 17.39±2% nm, the thickness of the seventh YBF3 film is 78.84±2% nm, the thickness of the seventh ZnS film is 18.65±2% nm, the thickness of the eighth YBF3 film is 311.74±2% nm, the thickness of the eighth ZnS film is 11.10±2% nm, the thickness of the ninth YBF3 film is 103.16±2% nm, the thickness of the ninth ZnS film is 7.74±2% nm, the thickness of the tenth YBF3 film is 167.60±2% nm, and the thickness of the AF film is 20±50% nm.

[0006] The present application can obtain an optical window with a light transmittance greater than 85% in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band (within the range of 0° to 60°) by alternately evaporating a YBF3 film and a ZnS film of a specific thickness on a substrate. In addition, by using an AF film of a specific thickness instead of a ZnS film on the outer surface of the tenth YBF3 film, the water drop angle of the optical window can be increased, which is conducive to obtaining an optical window with good self-cleaning ability, anti-fouling and dust-proof, and not prone to contamination. Frequent maintenance is not required, and the problem of the optical window's light transmittance in a specific band being affected by scratches during maintenance can be prevented. This is conducive to maintaining the stability of the optical window's light transmittance in a specific band and extending the service life of the optical window.

[0007] In some specific embodiments, the substrate is a ZnS substrate or a ZnSe substrate.

[0008] The optical window of the present application is constructed from a ZnS or ZnSe substrate. Both ZnS and ZnSe have high light transmittance in the infrared band. When combined with the aforementioned vapor-deposited film layer, this facilitates obtaining an optical window with a light transmittance greater than 85% in the 0.5μm-1μm, 3.7μm-4.8μm, and 7.7μm-12μm bands (within the range of 0° to 60°). Furthermore, both ZnS and ZnSe have excellent chemical stability, which helps improve the stability of the optical window.

[0009] In some specific embodiments, the multi-band optical window simultaneously satisfies the light transmittance of the 0.5 μm-1 μm band, the 3.7 μm-4.8 μm band, and the 7.7 μm-12 μm band within the range of 0° to 60° greater than 85%.

[0010] In some specific embodiments, the water drop angle of the multi-band optical window is 110-120°.

[0011] In the present application, the water drop angle of the multi-band optical window is in the range of 110-120°, which can improve the bonding strength between the multi-band optical window and the tenth YBF3 film while obtaining an optical window with good self-cleaning ability, anti-fouling and dust-proof, and not easy to be contaminated.

[0012] In a second aspect, the present application provides a method for manufacturing a multi-band optical window, which adopts the following technical solution:

[0013] A method for manufacturing a multi-band optical window comprises the following steps:

[0014] Prepare coating materials YBF3, ZnS and AF pellets;

[0015] An evaporation coating machine with an RF ion source is used to vacuum evaporate the first YBF3 film, the first ZnS film, the second YBF3 film, the second ZnS film, the third YBF3 film, the third ZnS film, the fourth YBF3 film, the fourth ZnS film, the fifth YBF3 film, the fifth ZnS film, the sixth YBF3 film, the sixth ZnS film, the seventh YBF3 film, the seventh ZnS film, the eighth YBF3 film, the eighth ZnS film, the ninth YBF3 film, the ninth ZnS film, the tenth YBF3 film and the AF film on the upper and lower surfaces of the substrate in sequence.

[0016] In this application, an evaporation coating machine with an RF ion source is used to evaporate YBF3 film, ZnS film and AF film. Compared with the Hall ion source, the RF ion source has greater energy, which is beneficial to optimize the lattice structure of each film layer and obtain an optical window with a light transmittance greater than 85% in the 0.5μm-1μm band, 3.7μm-4.8μm band, and 7.7μm-12μm band (within the range of 0° to 60°).

[0017] In some specific embodiments, when evaporating the first to tenth YBF3 films, the screen grid voltage of the RF ion source is controlled to be 500±10%V, the screen grid current is 350±10%A, the accelerating electrode voltage is 500±10%V, the RF power is 205±10%KW, and the argon flow rate is 20±10%sccm; the emitter voltage of the RF neutralizer is controlled to be 150±10%V, the emitter current is 2±10%A, the sustaining electrode voltage is 100±10%V, the sustaining electrode current is 1500±10%A, and the argon flow rate is 10±10%sccm.

[0018] When vapor-depositing the YBF3 film, controlling the parameters of the RF ion source and the RF neutralizer within the above range is beneficial to optimizing the lattice structure of the YBF3 film, reducing the YBF3 film's absorption of specific light, and enabling the multi-band optical window to simultaneously meet the light transmittance of greater than 85% in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band within the range of 0° to 60°.

[0019] In some specific embodiments, when evaporating the first to tenth YBF 3 films, the deposition rate of the YBF 3 film layer is controlled to be 5±2% A / s.

[0020] When evaporating the YBF3 film, controlling the deposition rate of the YBF3 film layer in the first YBF3 film to the tenth YBF3 film within the range of 5±2% A / s is beneficial to further improving the deposition uniformity of the first YBF3 film to the tenth YBF3 film. While obtaining an optical window with a light transmittance greater than 85% in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band (within the range of 0° to 60°), it further promotes the firm bonding between the film layers, which is beneficial to extending the service life of the multi-band optical window.

[0021] In some specific embodiments, when evaporating the first to ninth ZnS films, the screen gate voltage of the RF ion source is controlled to be 1100±10% V, the screen gate current is 800±10% A, the accelerating electrode voltage is 700±10% V, the RF power is 430±10% KW, the argon flow rate is 100±10% sccm, and the oxygen flow rate is 60±10% sccm; the emitter voltage of the RF neutralizer is controlled to be 150±10% V, the emitter current is 2±10% A, the sustaining electrode voltage is 100±10% V, the sustaining electrode current is 1500±10% A, and the argon flow rate is 10±10% sccm.

[0022] When evaporating the ZnS film, controlling the parameters of the RF ion source and the RF neutralizer within the above range is beneficial to optimizing the lattice structure of the ZnS film, reducing the ZnS film's absorption of specific light, and enabling the multi-band optical window to simultaneously meet the light transmittance of greater than 85% in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band within the range of 0° to 60°.

[0023] In some specific embodiments, when evaporating the first to ninth ZnS films, the deposition rate of the ZnS film layer is controlled to be 3±2% A / s.

[0024] When evaporating the ZnS film, controlling the deposition rate of the ZnS film layer in the first ZnS film to the ninth ZnS film within the range of 3±2% A / s is beneficial to further improve the deposition uniformity of the first ZnS film to the ninth ZnS film, while obtaining optical windows with light transmittance greater than 85% in the 0.5μm-1μm band, 3.7μm-4.8μm band, and 7.7μm-12μm band (within the range of 0° to 60°), further promoting the firm bonding between the film layers, and beneficial to extending the service life of the multi-band optical window.

[0025] In some specific embodiments, when evaporating the AF film, the evaporation rate of the AF pellet is controlled to be greater than 6 A / s.

[0026] In some specific embodiments, the vacuum degree of the evaporation coating machine with RF ion source is controlled to be 3.0*10 -5 torr-2.0*10 -5 torr, and the temperature was controlled at 150±10%℃.

[0027] In the present application, controlling the vacuum degree and temperature of the evaporation coating machine with an RF ion source within the above range is conducive to stabilizing the deposition rate and obtaining a uniform and dense film structure.

[0028] In summary, this application has at least the following beneficial technical effects:

[0029] The present application can obtain an optical window with a light transmittance greater than 85% in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band (within the range of 0° to 60°) by alternately evaporating a YBF3 film and a ZnS film of a specific thickness on a substrate. In addition, by using an AF film of a specific thickness instead of a ZnS film on the outer surface of the tenth YBF3 film, the water drop angle of the optical window can be increased, which is conducive to obtaining an optical window with good self-cleaning ability, anti-fouling and dust-proof, and not prone to contamination. Frequent maintenance is not required, and the problem of the optical window's light transmittance in a specific band being affected by scratches during maintenance can be prevented. This is conducive to maintaining the stability of the optical window's light transmittance in a specific band and extending the service life of the optical window. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a structural schematic diagram of an infrared glass large-angle multi-band optical window in an embodiment of the present application.

[0031] Figure 2 This is a graph of the light transmittance of the infrared glass wide-angle multi-band optical window in Example 3 in the 0.5μm-1μm band at 0°, 10°, 20°, 30°, 40°, 50°, and 60°.

[0032] Figure 3 This is a graph of the light transmittance of the infrared glass wide-angle multi-band optical window in Example 3 in the 3.7μm-4.8μm band at 0°, 10°, 20°, 30°, 40°, 50°, and 60°.

[0033] Figure 4 This is a graph of the light transmittance of the infrared glass wide-angle multi-band optical window in Example 3 in the 7.7μm-12μm band at 0°, 10°, 20°, 30°, 40°, 50°, and 60°.

[0034] Figure 5 This is a graph of the light transmittance of the infrared glass wide-angle multi-band optical window in Example 4 in the 0.5μm-1μm band at 0°, 10°, 20°, 30°, 40°, 50°, and 60°.

[0035] Figure 6 This is a graph of the light transmittance of the infrared glass wide-angle multi-band optical window in Example 4 in the 3.7μm-4.8μm band at 0°, 10°, 20°, 30°, 40°, 50°, and 60°.

[0036] Figure 7 This is a graph of the light transmittance of the infrared glass wide-angle multi-band optical window in Example 4 in the 7.7μm-12μm band at 0°, 10°, 20°, 30°, 40°, 50°, and 60°.

[0037] Figure 8 It is a comparison chart of the light transmittance curve of the optical window in Example 1 at 0° in the 0.5μm-1μm band (dark color) and the light transmittance curve of the infrared glass wide-angle multi-band optical window in Example 4 at 0° in the 0.5μm-1μm band (light color).

[0038] Figure 9 It is a comparison chart of the light transmittance curve of the optical window in Example 2 at 0° in the 0.5μm-1μm band (dark color) and the light transmittance curve of the infrared glass large-angle multi-band optical window in Example 4 at 0° in the 0.5μm-1μm band (light color).

[0039] Figure 10 It is a comparison chart of the light transmittance curve of the optical window in Example 3 at 0.5μm-1μm band at 0° (dark color) and the light transmittance curve of the infrared glass large-angle multi-band optical window in Example 4 at 0.5μm-1μm band at 0° (light color).

[0040] Figure 11 It is a comparison chart of the light transmittance curve of the optical window in Example 4 at 0.5μm-1μm band at 0° (dark color) and the light transmittance curve of the infrared glass large-angle multi-band optical window in Example 4 at 0.5μm-1μm band at 0° (light color).

[0041] Figure 12 It is a comparison chart of the light transmittance curve of the optical window in Example 5 at 0.5μm-1μm band at 0° (dark color) and the light transmittance curve of the infrared glass large-angle multi-band optical window in Example 4 at 0.5μm-1μm band at 0° (light color).

[0042] Figure 13 It is a comparison chart of the light transmittance curve of the optical window in Example 6 at 0° in the 0.5μm-1μm band (dark color) and the light transmittance curve of the infrared glass wide-angle multi-band optical window in Example 4 at 0° in the 0.5μm-1μm band (light color).

[0043] Figure 14 It is a comparison chart of the light transmittance curve of the optical window in Example 7 at 0° in the 0.5μm-1μm band (dark color) and the light transmittance curve of the infrared glass wide-angle multi-band optical window in Example 4 at 0° in the 0.5μm-1μm band (light color).

[0044] Figure 15It is a comparison chart of the light transmittance curve of the optical window in Example 8 at 0° in the 0.5μm-1μm band (dark color) and the light transmittance curve of the infrared glass wide-angle multi-band optical window in Example 4 at 0° in the 0.5μm-1μm band (light color).

[0045] Description of reference numerals:

[0046] 1. Substrate; 01. First YBF3 film; 02. First ZnS film; 03. Second YBF3 film; 04. Second ZnS film; 05. Third YBF3 film; 06. Third ZnS film; 07. Fourth YBF3 film; 08. Fourth ZnS film; 09. Fifth YBF3 film; 10. Fifth ZnS film; 11. Sixth YBF3 film; 12. Sixth ZnS film; 13. Seventh YBF3 film; 14. Seventh ZnS film; 15. Eighth YBF3 film; 16. Eighth ZnS film; 17. Ninth YBF3 film; 18. Ninth ZnS film; 19. Tenth YBF3 film; 20. AF film. DETAILED DESCRIPTION

[0047] The following is a further explanation of this application in conjunction with specific experiments:

[0048] Example

[0049] [Example 1]

[0050] An infrared glass large-angle multi-band optical window includes a ZnS substrate, on the upper and lower surfaces of the ZnS substrate are sequentially deposited with a first YBF3 film 01 with a thickness of 47.8044 nm, a first ZnS film 02 with a thickness of 23.1182 nm, a second YBF3 film 03 with a thickness of 106.8886 nm, a second ZnS film 04 with a thickness of 26.5972 nm, a third YBF3 film 05 with a thickness of 42.5972 nm, a third ZnS film 06 with a thickness of 173.7834 nm, a fourth YBF3 film 07 with a thickness of 41.0718 nm, a fourth ZnS film 08 with a thickness of 26.2346 nm, a fifth YBF3 film 09 with a thickness of 82.9962 nm, and a third ZnS film 01 with a thickness of 173.7834 nm. BF3 film 09, a fifth ZnS film 10 with a thickness of 9.5942 nm, a sixth YBF3 film 11 with a thickness of 88.151 nm, a sixth ZnS film 12 with a thickness of 17.0422 nm, a seventh YBF3 film 13 with a thickness of 77.2632 nm, a seventh ZnS film 14 with a thickness of 18.277 nm, an eighth YBF3 film 15 with a thickness of 305.5052 nm, an eighth ZnS film 16 with a thickness of 10.878 nm, a ninth YBF3 film 17 with a thickness of 101.0968 nm, a ninth ZnS film 18 with a thickness of 7.5852 nm, a tenth YBF3 film 19 with a thickness of 164.248 nm, and an AF film 20 with a thickness of 25 nm.

[0051] In this embodiment, the method for manufacturing the infrared glass wide-angle multi-band optical window includes the following steps:

[0052] S1, prepare coating materials YBF3, ZnS and AF pellets;

[0053] S2. Using an evaporation coating machine with an RF ion source, vacuum-deposit a first YBF3 film 01, a first ZnS film 02, a second YBF3 film 03, a second ZnS film 04, a third YBF3 film 05, a third ZnS film 06, a fourth YBF3 film 07, a fourth ZnS film 08, a fifth YBF3 film 09, a fifth ZnS film 10, a sixth YBF3 film 11, a sixth ZnS film 12, a seventh YBF3 film 13, a seventh ZnS film 14, an eighth YBF3 film 15, an eighth ZnS film 16, a ninth YBF3 film 17, a ninth ZnS film 18, a tenth YBF3 film 19, and an AF film 20 on the upper and lower surfaces of the ZnS substrate in sequence;

[0054] Specifically, during the deposition of the first to tenth YBF3 films, the deposition rate of the YBF3 film layer was controlled to be 5.1 A / s; more specifically, the vacuum degree of the evaporation coating machine with the RF ion source was controlled to be 2.0*10 -5 torr, the temperature was controlled at 135°C, the screen grid voltage of the RF ion source was controlled to be 550V, the screen grid current was 385A, the accelerating electrode voltage was 550V, the RF power was 225.5KW, the argon gas flow rate was 22sccm, the emitter voltage of the RF neutralizer was controlled to be 165V, the emitter current was 2.2A, the sustaining electrode voltage was 110V, the sustaining electrode current was 1650A, and the argon gas flow rate was 11sccm;

[0055] Specifically, during the deposition of the first to ninth ZnS films, the deposition rate of the ZnS film layer was controlled to be 3.06 A / s; more specifically, the vacuum degree of the evaporation coating machine with the RF ion source was controlled to be 2.0*10 -5 torr, the temperature is controlled at 135℃, the screen grid voltage of the RF ion source is controlled to be 1210V, the screen grid current is 880A, the accelerating electrode voltage is 770V, the RF power is 473KW, the argon flow rate is 110sccm, and the oxygen flow rate is 66sccm. The emitter voltage of the RF neutralizer is controlled to be 165V, the emitter current is 2.2A, the maintaining electrode voltage is 110V, the maintaining electrode current is 1650A, and the argon flow rate is 11sccm.

[0056] Specifically, when evaporating the AF film, the evaporation rate of the AF pills was controlled to be 6.5 A / s.

[0057] [Example 2]

[0058] An infrared glass large-angle multi-band optical window includes a ZnSe substrate, on the upper and lower surfaces of the ZnSe substrate are sequentially deposited with a first YBF3 film 01 with a thickness of 49.7556 nm, a first ZnS film 02 with a thickness of 24.0618 nm, a second YBF3 film 03 with a thickness of 111.2514 nm, a second ZnS film 04 with a thickness of 27.6828 nm, a third YBF3 film 05 with a thickness of 44.4006 nm, a third ZnS film 06 with a thickness of 180.8766 nm, a fourth YBF3 film 07 with a thickness of 42.7482 nm, a fourth ZnS film 08 with a thickness of 27.3054 nm, a fifth ZnS film 09 with a thickness of 86.3838 nm, and a third YBF3 film 01 with a thickness of 49.7556 nm. YBF3 film 09, a fifth ZnS film 10 with a thickness of 9.9858 nm, a sixth YBF3 film 11 with a thickness of 91.749 nm, a sixth ZnS film 12 with a thickness of 17.7378 nm, a seventh YBF3 film 13 with a thickness of 80.4168 nm, a seventh ZnS film 14 with a thickness of 19.023 nm, an eighth YBF3 film 15 with a thickness of 317.9748 nm, an eighth ZnS film 16 with a thickness of 11.322 nm, a ninth YBF3 film 17 with a thickness of 105.2232 nm, a ninth ZnS film 18 with a thickness of 7.8948 nm, a tenth YBF3 film 19 with a thickness of 170.952 nm, and an AF film 20 with a thickness of 15 nm.

[0059] In this embodiment, the method for making the infrared glass wide-angle multi-band optical window differs from the method for making the infrared glass wide-angle multi-band optical window in [Example 1] in that:

[0060] Specifically, during the deposition of the first to tenth YBF3 films, the deposition rate of the YBF3 film layer was controlled to be 4.9 A / s; more specifically, the vacuum degree of the evaporation coating machine with the RF ion source was controlled to be 3.0*10 -5 torr, the temperature was controlled at 135°C, the screen grid voltage of the RF ion source was controlled at 450V, the screen grid current was 315A, the accelerating electrode voltage was controlled at 450V, the RF power was controlled at 184.5KW, the argon gas flow rate was controlled at 18sccm, the emitter voltage of the RF neutralizer was controlled at 135V, the emitter current was controlled at 1.8A, the sustaining electrode voltage was controlled at 90V, the sustaining electrode current was controlled at 1350A, and the argon gas flow rate was controlled at 9sccm;

[0061] Specifically, during the deposition of the first to ninth ZnS films, the deposition rate of the ZnS film layer was controlled to be 2.94 A / s; more specifically, the vacuum degree of the evaporation coating machine with the RF ion source was controlled to be 3.0*10 -5torr, the temperature is controlled at 135℃, the screen grid voltage of the RF ion source is controlled to be 990V, the screen grid current is 720A, the accelerating electrode voltage is 630V, the RF power is 387KW, the argon flow rate is 90sccm, and the oxygen flow rate is 54sccm. The emitter voltage of the RF neutralizer is controlled to be 135V, the emitter current is 1.8A, the maintaining electrode voltage is 90V, the maintaining electrode current is 1350A, and the argon flow rate is 9sccm.

[0062] Specifically, when evaporating the AF film, the evaporation rate of the AF pills was controlled to be 7.5 A / s.

[0063] [Example 3]

[0064] An infrared glass large-angle multi-band optical window includes a ZnS substrate, on the upper and lower surfaces of the ZnS substrate are sequentially deposited with a first YBF3 film 01 with a thickness of 48.78 nm, a first ZnS film 02 with a thickness of 23.59 nm, a second YBF3 film 03 with a thickness of 109.07 nm, a second ZnS film 04 with a thickness of 27.14 nm, a third YBF3 film 05 with a thickness of 43.53 nm, a third ZnS film 06 with a thickness of 177.33 nm, a fourth YBF3 film 07 with a thickness of 41.91 nm, a fourth ZnS film 08 with a thickness of 26.77 nm, a fifth YBF3 film 09 with a thickness of 84.69 nm, and a third ZnS film 01 with a thickness of 177.33 nm. 3 film 09, a fifth ZnS film 10 with a thickness of 9.79 nm, a sixth YBF3 film 11 with a thickness of 89.95 nm, a sixth ZnS film 12 with a thickness of 17.39 nm, a seventh YBF3 film 13 with a thickness of 78.84 nm, a seventh ZnS film 14 with a thickness of 18.65 nm, an eighth YBF3 film 15 with a thickness of 311.74 nm, an eighth ZnS film 16 with a thickness of 11.10 nm, a ninth YBF3 film 17 with a thickness of 103.16 nm, a ninth ZnS film 18 with a thickness of 7.74 nm, a tenth YBF3 film 19 with a thickness of 167.60 nm, and an AF film 20 with a thickness of 20 nm.

[0065] In this embodiment, the method for manufacturing the infrared glass wide-angle multi-band optical window differs from that in [Example 1] in that:

[0066] Specifically, during the deposition of the first to tenth YBF3 films, the deposition rate of the YBF3 film layer was controlled to be 5A / s; more specifically, the vacuum degree of the evaporation coating machine with the RF ion source was controlled to be 2.5*10 -5torr, the temperature was controlled at 135°C, the screen grid voltage of the RF ion source was controlled to be 500V, the screen grid current was 350A, the accelerating electrode voltage was 500V, the RF power was 205KW, and the argon gas flow rate was 20sccm; the emitter voltage of the RF neutralizer was controlled to be 150V, the emitter current was 2A, the sustaining electrode voltage was 100V, the sustaining electrode current was 1500A, and the argon gas flow rate was 10sccm;

[0067] Specifically, during the deposition of the first to ninth ZnS films, the deposition rate of the ZnS film layer was controlled to be 3A / s; more specifically, the vacuum degree of the evaporation coating machine with the RF ion source was controlled to be 2.5*10 -5 torr, the temperature is controlled at 135°C, the screen grid voltage of the RF ion source is controlled to be 1100V, the screen grid current is 800A, the accelerating electrode voltage is 700V, the RF power is 430KW, the argon flow rate is 100sccm, and the oxygen flow rate is 60sccm. The emitter voltage of the RF neutralizer is controlled to be 150V, the emitter current is 2A, the maintaining electrode voltage is 100V, the maintaining electrode current is 1500A, and the argon flow rate is 10sccm.

[0068] Specifically, when evaporating the AF film, the evaporation rate of the AF pills was controlled to be 7.0 A / s.

[0069] [Example 4]

[0070] An infrared glass wide-angle multi-band optical window differs from Example 3 in that the substrate 1 is different. In this embodiment, the substrate 1 is a ZnSe substrate.

[0071] Comparative Example

[0072] [Comparative Example 1]

[0073] An optical window, which differs from [Example 4] in that the third YBF3 film 05 is not evaporated.

[0074] [Comparative Example 2]

[0075] An optical window, which differs from [Example 4] in that the vapor-deposited thickness of the third YBF3 film 05 is 63.53 nm.

[0076] [Comparative Example 3]

[0077] An optical window, which differs from [Example 4] in that the fifth YBF3 film 09 is not evaporated.

[0078] [Comparative Example 4]

[0079] An optical window, which differs from [Example 4] in that the vapor-deposited thickness of the fifth YBF3 film 09 is 19.79 nm.

[0080] [Comparative Example 5]

[0081] An optical window, which differs from [Example 4] in that the eighth YBF3 film 15 is not evaporated.

[0082] [Comparative Example 6]

[0083] An optical window, which differs from [Example 4] in that the vapor-deposited thickness of the eighth YBF3 film 15 is 321.74 nm.

[0084] [Comparative Example 7]

[0085] An optical window, which differs from [Example 4] in that the ninth YBF3 film 17 is not evaporated.

[0086] [Comparative Example 8]

[0087] An optical window, which differs from [Example 4] in that the vapor-deposited thickness of the ninth YBF3 film 17 is 113.16 nm.

[0088] [Comparative Example 9]

[0089] An infrared glass large-angle multi-band optical window, which differs from [Example 4] in that it does not have an AF film evaporated.

[0090] Performance testing

[0091] 1. Light Transmittance: A Fourier transform infrared (FTIR) tester was used to test the light transmittance of the wide-angle, multi-band infrared glass optical windows of Examples 1-4 and Comparative Example 9 in the 0.5μm-1μm, 3.7μm-4.8μm, and 7.7μm-12μm bands. The test angle range was 0°-60°, with light transmittance measured every 10°. The results are recorded in Table 1 below. Additionally, the light transmittance of the optical windows of Comparative Examples 1-8 in the 0.5μm-1μm band at 0° was tested. If the light transmittance did not meet a light transmittance of greater than 85%, light transmittance in other bands was not tested. The results are recorded in Table 2 below.

[0092] 2. Water drop angle: The water drop angle of the infrared glass wide-angle multi-band optical window prepared in each embodiment and comparative example was tested using a water drop angle tester, and the results are recorded in Table 3 below.

[0093] Table 1

[0094]

[0095]

[0096] Table 2

[0097]

[0098] Table 3

[0099] Sample Water drop corner Example 1 110°-120° Example 2 110°-120° Example 3 110°-120° Example 4 110°-120° Comparative Example 1 110°-120° Comparative Example 2 110°-120° Comparative Example 3 110°-120° Comparative Example 4 110°-120° Comparative Example 5 110°-120° Comparative Example 6 110°-120° Comparative Example 7 110°-120° Comparative Example 8 110°-120° Comparative Example 9 35°-45°

[0100] According to the test results in Example 4, Comparative Examples 1-8 and Table 1-2, the light transmittance of the infrared glass wide-angle multi-band optical window in the 0.5μm-1μm band, 3.7μm-4.8μm band, and 7.7μm-12μm band (within the range of 0° to 60°) is greater than 85%, which depends on the coordination of the film structure and the film thickness, neither of which can be missing.

[0101] According to the test results in Example 4, Comparative Example 9 and Table 3, it can be seen that: the outermost layer of the infrared glass wide-angle multi-band optical window is provided with an AF film of a specific film thickness, which can improve the water drop angle of the infrared glass wide-angle multi-band optical window, so that the infrared glass wide-angle multi-band optical window obtains an optical window with a water drop angle within the range of 110-120°, good self-cleaning ability, anti-fouling and dust-proof, and not easy to be contaminated.

[0102] This specific implementation manner is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make non-creative modifications to the specific implementation manner as needed, but as long as they are within the scope of the claims of the present application, they are protected by the patent law.

Claims

1. A multi-band optical window, characterized in that: The invention comprises a substrate (1), wherein the upper and lower surfaces of the substrate (1) are sequentially vapor-deposited with a first YBF3 film (01) with a thickness of 48.78±2%nm, a first ZnS film (02) with a thickness of 23.59±2%nm, a second YBF3 film (03) with a thickness of 109.07±2%nm, a second ZnS film (04) with a thickness of 27.14±2%nm, a third YBF3 film (05) with a thickness of 43.53±2%nm, a third ZnS film (06) with a thickness of 177.33±2%nm, a fourth YBF3 film (07) with a thickness of 41.91±2%nm, a fourth ZnS film (08) with a thickness of 26.77±2%nm, a fifth YBF3 film (09) with a thickness of 84.69±2%nm, a fifth ZnS film (010) with a thickness of 9.79 ±2% nm, a fifth ZnS film (10) with a thickness of 89.95±2% nm, a sixth YBF3 film (11) with a thickness of 89.95±2% nm, a sixth ZnS film (12) with a thickness of 17.39±2% nm, a seventh YBF3 film (13) with a thickness of 78.84±2% nm, a seventh ZnS film (14) with a thickness of 18.65±2% nm, an eighth YBF3 film (15) with a thickness of 311.74±2% nm, an eighth ZnS film (16) with a thickness of 11.10±2% nm, a ninth YBF3 film (17) with a thickness of 103.16±2% nm, a ninth ZnS film (18) with a thickness of 7.74±2% nm, a tenth YBF3 film (19) with a thickness of 167.60±2% nm, and an AF film (20) with a thickness of 20±50% nm.

2. The multi-band optical window according to claim 1, characterized in that: The substrate (1) is a ZnS substrate or a ZnSe substrate.

3. The multi-band optical window according to claim 1, wherein: The multi-band optical window simultaneously satisfies the requirement that the light transmittance in the range of 0°~60° in the 0.5μm-1μm band, the 3.7μm-4.8μm band, and the 7.7μm-12μm band is greater than 85%.

4. The multi-band optical window according to claim 1, wherein: The water drop angle of the multi-band optical window is 110-120°.

5. The method for manufacturing a multi-band optical window according to any one of claims 1 to 4, characterized in that: The following steps are involved: Prepare coating materials ZnS, YbF3 and AF pellets; The upper and lower surfaces of the substrate (1) are vacuum coated in sequence using an evaporation coating machine with an RF ion source. The first YBF3 film (01), the first ZnS film (02), the second YBF3 film (03), the second ZnS film (04), the third YBF3 film (05), the third ZnS film (06), the fourth YBF3 film (07), the fourth ZnS film (08), the fifth YBF3 film (09), the fifth ZnS film (10), the sixth YBF3 film (11), the sixth ZnS film (12), the seventh YBF3 film (13), the seventh ZnS film (14), the eighth YBF3 film (15), the eighth ZnS film (16), the ninth YBF3 film (17), the ninth ZnS film (18), the tenth YBF3 film (19) and the AF film (20) are evaporated.

6. The method for manufacturing a multi-band optical window according to claim 5, wherein: When evaporating the first to tenth YBF3 films, the screen grid voltage of the RF ion source was controlled to be 500±10%V, the screen grid current was 350±10%A, the accelerating electrode voltage was 500±10%V, the RF power was 205±10%KW, and the argon gas flow rate was 20±10%sccm. The emitter voltage of the RF neutralizer was controlled to be 150±10%V, the emitter current was 2±10%A, the sustaining electrode voltage was 100±10%V, the sustaining electrode current was 1500±10%A, and the argon gas flow rate was 10±10%sccm.

7. The method for manufacturing a multi-band optical window according to claim 5, wherein: When evaporating the first to tenth YBF 3 films, the deposition rate of the YBF 3 film layer is controlled to be 5±2% A / s.

8. The method for manufacturing a multi-band optical window according to claim 5, wherein: When evaporating the first to ninth ZnS films, the screen grid voltage of the RF ion source was controlled to be 1100±10%V, the screen grid current was 800±10%A, the accelerating electrode voltage was 700±10%V, the RF power was 430±10%KW, the argon flow rate was 100±10%sccm, and the oxygen flow rate was 60±10%sccm. The emitter voltage of the RF neutralizer was controlled to be 150±10%V, the emitter current was 2±10%A, the sustaining electrode voltage was 100±10%V, the sustaining electrode current was 1500±10%A, and the argon flow rate was 10±10%sccm.

9. The method for manufacturing a multi-band optical window according to claim 5, wherein: When evaporating the first to ninth ZnS films, the deposition rate of the ZnS film layers is controlled to be 3±2% A / s.

10. The method for manufacturing a multi-band optical window according to claim 5, characterized in that: The vacuum degree of the evaporation coating machine with RF ion source is controlled to 3.0*10 -5 torr-2.0*10 -5 torr, and the temperature is controlled at 150±10%℃.

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