A method and device for evaluating reliability of ion electric propulsion

Abstract

The present application relates to an ion electric propulsion reliability evaluation method and device. Collect a grid sputtering etching data set, a beam scintillation data set, and an operating condition parameter data set for ion electric propulsion reliability evaluation; perform ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling for ion electric propulsion reliability evaluation based on the grid sputtering etching data set, the beam scintillation data set, and the operating condition parameter data set; perform ion electric propulsion reliability modeling for ion electric propulsion reliability evaluation based on ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling; determine the reliability of ion electric propulsion reliability evaluation based on ion electric propulsion reliability modeling and beam scintillation data set. The present application improves the effectiveness and accuracy of the ion electric propulsion reliability evaluation model obtained by ion electric propulsion reliability modeling; and improves the accuracy of ion electric propulsion performance evaluation and lifetime reliability evaluation.

Description

Technical Field

[0001] The present invention relates to the field of space electric propulsion technology, and more specifically, to an ion electric propulsion reliability evaluation method and device. Background Art

[0002] In order to continuously adapt to the new requirements of high reliability of propulsion systems in the new situation of space missions, ion electric propulsion, as the core unit of the electric propulsion system, is facing an urgent need to further improve the reliability of its service performance. Therefore, how to construct a reliability evaluation model that best fits the actual working process to accurately evaluate its service reliability has become an essential basic research task.

[0003] Existing research mainly starts from failure mode analysis, and constructs life distribution and reliability evaluation models for a single failure mechanism of either degradation failure or sudden failure. With the accumulation of research experience and further understanding of the failure mechanism of ion electric propulsion, it is not difficult to find that due to the complexity of ion electric propulsion products themselves and the uncertainty of the working environment, its failure is often caused by the simultaneous occurrence of multiple failure mechanisms, and multiple mechanisms often show a coupled relationship, which makes the failure evolution process of ion electric propulsion show significant differences from the single failure process. Therefore, the limitations of the ion electric propulsion reliability evaluation model that only considers a single failure mechanism are becoming increasingly prominent. Summary of the invention

[0004] The embodiments of the present application provide a method and device for evaluating the reliability of ion electric propulsion. In order to have a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. This summary is not a general review, nor is it intended to identify key / important components or describe the scope of protection of these embodiments. Its only purpose is to present some concepts in a simple form as a preface to the detailed description that follows.

[0005] In a first aspect, the present application provides a method for evaluating the reliability of ion electric propulsion, the method comprising:

[0006] Collect grid sputtering and etching data sets, beam scintillation data sets, and operating condition parameter data sets for ion electric propulsion reliability evaluation;

[0007] According to the grid sputtering etching data set, the beam scintillation data set and the operating condition parameter data set, ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling for the ion electric propulsion reliability evaluation are performed;

[0008] According to the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling, ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is performed;

[0009] The reliability of the ion electric propulsion reliability evaluation is determined based on the ion electric propulsion reliability modeling and the beam scintillation data set.

[0010] According to a preferred embodiment, the acquisition of a gate sputtering etching data set for ion electric propulsion reliability evaluation includes:

[0011] Collect the running time of ion electric propulsion samples, gate sputtering etching depth and first gate failure threshold for ion electric propulsion reliability evaluation;

[0012] The ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold are used as data in a gate sputtering etching data set for the ion electric propulsion reliability evaluation.

[0013] According to a preferred embodiment, the acquisition of an operating condition parameter data set for ion electric propulsion reliability evaluation includes:

[0014] Collect the grid inner and outer hole circle areas, grid design thickness, grid spacing, screen grid voltage and acceleration grid voltage for ion electric propulsion reliability evaluation;

[0015] The inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the acceleration gate voltage are used as data in the operating condition parameter data set for the ion electric propulsion reliability evaluation.

[0016] According to a preferred embodiment, the acquisition of a beam scintillation data set for ion electric propulsion reliability evaluation includes:

[0017] Collect the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of grid material, second grid failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point for ion electric propulsion reliability evaluation;

[0018] The beam flicker frequency, the single beam flicker pulse current, the single beam flicker pulse width, the mass loss rate caused by the unit charge transfer of the gate material, the second gate failure threshold corresponding to the beam flicker energy impact and the impact interval corresponding to the transition point are used as data in the beam flicker data set for the ion electric propulsion reliability evaluation.

[0019] According to a preferred embodiment, the ion electric propulsion reliability modeling for evaluating the ion electric propulsion reliability based on the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling includes:

[0020] The overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is determined based on the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam scintillation energy impact of the ion electric propulsion grid beam scintillation impact modeling.

[0021] According to a preferred embodiment, determining the reliability of the ion electric propulsion reliability evaluation based on the ion electric propulsion reliability modeling and the beam scintillation data set includes:

[0022] The reliability of the ion electric propulsion reliability evaluation is determined according to the overall performance degradation amount of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

[0023] In a second aspect, the present application provides an ion electric propulsion reliability evaluation device, the device comprising:

[0024] An acquisition module is used to acquire grid sputtering and etching data sets, beam scintillation data sets, and operating condition parameter data sets for ion electric propulsion reliability evaluation;

[0025] A primary modeling module, configured to perform ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling for the ion electric propulsion reliability evaluation according to the grid sputtering etching data set, the beam scintillation data set and the operating condition parameter data set;

[0026] A secondary modeling module is used to perform ion electric propulsion reliability modeling for evaluating the ion electric propulsion reliability based on the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling;

[0027] The reliability determination module is used to determine the reliability of the ion electric propulsion reliability evaluation according to the ion electric propulsion reliability modeling and the beam scintillation data set.

[0028] According to a preferred embodiment, the acquisition module is specifically used for:

[0029] Collecting the ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold for ion electric propulsion reliability evaluation; using the ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold as data in the gate sputtering etching data set for the ion electric propulsion reliability evaluation;

[0030] Collecting the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the accelerating gate voltage for the reliability evaluation of the ion electric propulsion; using the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the accelerating gate voltage as data in the operating condition parameter data set for the reliability evaluation of the ion electric propulsion;

[0031] The beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point for the reliability evaluation of the ion electric propulsion are collected; the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point are used as data in the beam flicker data set for the reliability evaluation of the ion electric propulsion.

[0032] According to a preferred embodiment, the re-modeling module is used to determine the overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation based on the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam flicker energy impact of the ion electric propulsion grid beam flicker impact modeling.

[0033] According to a preferred embodiment, the reliability determination module is used to determine the reliability of the ion electric propulsion reliability evaluation based on the overall performance degradation of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

[0034] In a third aspect, the present application provides a computer storage medium, which stores a plurality of instructions, and the instructions are suitable for being loaded by a processor and executing the above-mentioned method steps.

[0035] In a fourth aspect, the present application provides a terminal, which may include: a processor and a memory; wherein the memory stores a computer program, and the computer program is suitable for being loaded by the processor and executing the above-mentioned method steps.

[0036] The technical solution provided by this application may have the following beneficial effects:

[0037] In the present application, the ion electric propulsion reliability evaluation method collects a grid sputtering etching data set, a beam scintillation data set and an operating condition parameter data set for the ion electric propulsion reliability evaluation; based on the grid sputtering etching data set, the beam scintillation data set and the operating condition parameter data set, the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam scintillation impact modeling for the ion electric propulsion reliability evaluation are performed; based on the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam scintillation impact modeling, the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is performed; based on the ion electric propulsion reliability modeling and the beam scintillation data set, the reliability of the ion electric propulsion reliability evaluation is determined. Compared with the prior art, the present application incorporates the coupling effects such as the combination, superposition and induction between the ion electric propulsion grid sputtering etching and the beam scintillation impact into the ion electric propulsion reliability evaluation model, improves the accuracy of the ion electric propulsion performance evaluation and the life reliability evaluation, and better supports the formulation of the ion electric propulsion on-orbit application strategy based on the service life reliability. This application improves the structure of the ion electric propulsion reliability evaluation model and enhances the effectiveness and accuracy of the ion electric propulsion reliability evaluation model.

[0038] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0040] Figure 1 It is a flow chart of a method for evaluating the reliability of ion electric propulsion provided in an embodiment of the present application;

[0041] Figure 2 is a schematic diagram of an ion electric propulsion reliability evaluation device provided in an embodiment of the present application;

[0042] Figure 3 This is a terminal schematic diagram provided in an embodiment of the present application.

[0043] Reference numerals:

[0044] 10000, acquisition module, 20000, initial modeling module, 30000, secondary modeling module, 40000, reliability determination module;

[0045] 1001. Processor, 1002. Communication bus, 1003. User interface, 1004. Network interface, 1005. Memory. DETAILED DESCRIPTION

[0046] The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them.

[0047] It should be clear that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are only examples of systems and methods consistent with some aspects of the present invention as detailed in the attached claims.

[0049] In the description of the present invention, it should be understood that the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, in the description of the present invention, unless otherwise specified, "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the previously associated objects are in an "or" relationship.

[0050] See also Figure 1 , which is a flow chart of a method for evaluating the reliability of ion electric propulsion according to an embodiment of the present application. Figure 1 As shown, the method of the embodiment of the present application may include the following steps:

[0051] The present application provides an ion electric propulsion reliability evaluation method, which is an ion electric propulsion reliability evaluation method based on the coupling effect of sputtering etching and beam scintillation. On the basis of constructing the grid sputtering etching degradation model and the beam scintillation energy impact model of ion electric propulsion, considering the coupling effect of the two, an ion electric propulsion reliability evaluation model is constructed to achieve an ion electric propulsion reliability evaluation that is closer to engineering practice.

[0052] S100, collecting the grid sputtering etching data set, beam scintillation data set and operating condition parameter data set for ion electric propulsion reliability evaluation.

[0053] The gate sputtering etching data, beam scintillation data and operating condition parameter data collection of the ion electric propulsion in the embodiment of the present application are three sub-datasets of ion electric propulsion constructed based on the ion electric propulsion ground test status monitoring data and on-orbit telemetry data: a gate sputtering etching data set, a beam scintillation data set and an operating condition parameter data set, which provide input for subsequent ion electric propulsion gate sputtering etching degradation modeling, ion electric propulsion gate beam scintillation impact modeling and ion electric propulsion reliability modeling.

[0054] Among them, the collecting of the gate sputtering etching data set for ion electric propulsion reliability evaluation includes: collecting the running time of multiple ion electric propulsion samples for ion electric propulsion reliability evaluation, the gate sputtering etching depth corresponding to the specified running time, and the first gate failure threshold; using the ion electric propulsion sample running time, the gate sputtering etching depth and the first gate failure threshold as the data in the gate sputtering etching data set for ion electric propulsion reliability evaluation.

[0055] Among them, the operating condition parameter data set for collecting the reliability evaluation of ion electric propulsion includes: collecting the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the acceleration gate voltage for the reliability evaluation of ion electric propulsion; and using the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the acceleration gate voltage as the data in the operating condition parameter data set for the reliability evaluation of ion electric propulsion.

[0056] Wherein, the beam flicker data set for ion electric propulsion reliability evaluation includes: collecting the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval value corresponding to its transition point for ion electric propulsion reliability evaluation; the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval value corresponding to its transition point are used as data in the beam flicker data set for ion electric propulsion reliability evaluation.

[0057] The first gate failure threshold and the second gate failure threshold of the embodiment of the present application refer to gate performance degradation failure thresholds; the impact interval is represented by the impact interval value.

[0058] S200, based on the grid sputtering etching data set, the beam scintillation data set and the operating condition parameter data set, perform ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling for the ion electric propulsion reliability evaluation. The ion electric propulsion grid sputtering etching degradation model is obtained by modeling the ion electric propulsion grid sputtering etching degradation, and the beam scintillation energy impact model is obtained by modeling the ion electric propulsion grid beam scintillation impact.

[0059] When modeling the sputtering etching degradation of the ion electric propulsion gate in the embodiments of the present application, the effects of electric field distortion caused by the degradation of the gate state should be considered, and both linear and nonlinear effects should be considered in the gate sputtering etching degradation model. High-energy particles such as charge exchange ions generated during the operation of the ion electric propulsion will move rapidly toward the accelerating gate under the attraction of the negative voltage of the accelerating gate, resulting in pits caused by sputtering etching on the surface of the accelerating gate. During this process, the ion electric propulsion beam extraction performance gradually degrades. Structural failure occurs when the pit depth, that is, the gate sputtering etching depth, reaches the designed thickness of the accelerating gate. The degradation process can be expressed as:

[0060]

[0061] in, represents the ion electric propulsion sample running time, represents the degradation amount of ion electric propulsion sputtering etching when the ion electric propulsion sample is running for time t, that is, the degradation amount caused by the sputtering etching of the gate of ion electric propulsion, is the degradation amount at the initial moment, is the sputtering etching degradation rate, which follows a normal distribution A random variable, express The mean value of express The variance of is the random perturbation. Since the working electric field of ion electric propulsion will change under the action of beam flickering, thus affecting sputtering etching, the sputtering etching degradation process may also satisfy nonlinear evolution. , denote linear and nonlinear functions of time variables, respectively. , They represent the significance screening coefficients of the linear term and the nonlinear term respectively. When the value is 0, it means that the term has no effect on sputtering etching, and when the value is 1, the opposite is true.

[0062] The embodiment of the present application performs ion electric propulsion grid beam scintillation impact modeling, which can be: According to the electrode ablation principle, the charge transfer amount of a single beam scintillation discharge is , including subscript i , jThe parameter represents the i Ion electric propulsion, j The corresponding parameter value at the moment, Represents the pulse width of a single beam scintillation. Different single beam scintillation pulse currents correspond to different discharge charge transfer amounts, and the grid ablation mass due to the beam scintillation energy impact loss is also different. According to the grid working performance requirements, the calculation process of the beam scintillation impact energy loss can be:

[0063] There are two different calculation methods from two different perspectives. One of the calculation methods is: the grid ablation mass lost by beam scintillation energy impact is related to the charge transfer amount of a single beam scintillation discharge, and the grid ablation mass caused by beam scintillation energy impact is calculated as:

[0064]

[0065] in, The grid ablation quality caused by the beam scintillation energy impact, It is the mass loss rate of the gate material caused by unit charge transfer.

[0066] Another calculation method is to use the gate structure change to calculate the gate ablation mass of a single hole:

[0067]

[0068] in, In order to calculate the gate ablation quality of a single hole using the gate structure change, is the gate material density, is the area of ​​the inner hole of the gate, is the area of ​​the outer hole of the gate.

[0069] Since the calculated results from these two different perspectives are equal, , that is .

[0070] The first i Ion electric propulsion, j The gate performance degradation caused by the single beam flash energy impact at time is:

[0071]

[0072] in, is the loss in the grid thickness direction caused by the beam scintillation energy impact, indicating the Ion electric propulsion, The gate performance degradation caused by the single beam scintillation energy impact at time t, and it is subject to normal distribution of independent and identically distributed non-negative random variables, express The mean of Indicated variance, Represents the single beam scintillation pulse current.

[0073] Considering the induced effect of the gate surface state change on the gate beam flicker after sputtering etching, this induced effect will lead to the enhancement of the beam flicker energy impact, and the enhancement factor is:

[0074]

[0075] in, is the enhancement factor, is the net accelerating voltage, which is the screen grid voltage and the accelerating gate voltage The sum of the absolute values, is the work function of the gate material, is the field emission current, represents the enhancement factor function, represents the gate spacing, d l Indicates the second grid failure threshold corresponding to the beam flicker energy impact.

[0076] Therefore, during the ion electric propulsion service life The amount of (grid) performance degradation caused by beam scintillation energy impact is:

[0077]

[0078] in, is the gate performance degradation caused by the beam scintillation energy impact within the service period t, For service period The beam scintillation count within is also called the beam scintillation frequency; the service cycle is the operating time of the above-mentioned ion electric propulsion sample.

[0079] S300, performing ion electric propulsion reliability modeling for ion electric propulsion reliability evaluation according to the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling, thereby obtaining an ion electric propulsion reliability evaluation model, including:

[0080] The overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is determined based on the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam scintillation energy impact of the ion electric propulsion grid beam scintillation impact modeling.

[0081] The embodiment of the present application is based on the reliability modeling of ion electric propulsion based on the coupling effect of sputtering etching degradation and beam scintillation impact, which fully considers the coupling effect of gate sputtering etching degradation and beam scintillation energy impact, and the coupling effect is reflected in the following three aspects: First, the performance degradation of ion electric propulsion is composed of two parts: sputtering etching and beam scintillation energy impact, and the overall performance degradation is the superposition of the degradation caused by the two respectively; second, the second gate failure threshold corresponding to the beam scintillation energy impact is related to the overall performance degradation. When the overall performance degradation reaches d l When, among them, d l < d 0, It represents the first grid failure threshold. The beam flicker frequency changes due to the deterioration of the performance of the ion electric propulsion system, and correspondingly, the second grid failure threshold corresponding to the beam flicker energy impact also changes. Third, the surface state of the gate deteriorates after sputtering and etching, which leads to changes in the beam flicker frequency and single beam flicker energy. That is, sputtering etching has an inducing effect on the beam flicker energy impact.

[0082] The coupling effect of gate sputtering etching degradation and beam scintillation energy impact is reflected in the ion electric propulsion reliability evaluation model as follows:

[0083] 1)

[0084] The amount of overall performance degradation modeled for ion electric propulsion reliability.

[0085] 2) The impact interval value corresponding to the transition point of the second grid failure threshold corresponding to the beam scintillation energy impact is , that is, the impact interval value between two impacts, which includes: the maximum impact interval value and the minimum impact interval value when sputtering etching failure occurs in this sputtering etching failure mode. The maximum impact interval value is Indicates the minimum impact interval value. When the overall performance degradation reaches d l When the beam scintillation energy impact corresponds to the second grid failure threshold value from Change to ,in, d l < d 0, represents the first gate failure threshold.

[0086] 3) Sputtering etching has an inducing effect on the energy impact of beam scintillation, and this inducing effect is characterized by the enhancement factor. From the above, it can be seen that the enhancement factor is not only a piecewise function of the gate degradation state, but also related to parameters such as the gate net acceleration voltage, gate spacing, gate material characteristics, and field emission current. It is not only a piecewise function of the gate degradation state, but also related to parameters such as the gate net acceleration voltage, gate spacing, gate material characteristics, and field emission current.

[0087] S400, determining the reliability of the ion electric propulsion reliability evaluation according to the ion electric propulsion reliability modeling and the beam scintillation data set, including:

[0088] The reliability of the ion electric propulsion reliability evaluation is determined according to the overall performance degradation amount of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

[0089] In the embodiment of the present application, when the impact interval value of the beam scintillation satisfies the beam scintillation energy impact model, the occurrence time obeys the parameter A homogeneous Poisson process, represents the parameters of the homogeneous Poisson process, so the time intervals between two flashes, i.e., the impulse intervals, are independent and follow the parameters The exponential distribution of The second grid failure threshold corresponding to the beam flicker energy impact at the time is the maximum impact interval value. The second grid failure threshold corresponding to the beam flicker energy impact at is the minimum impact interval value.

[0090] Therefore, ion electric propulsion is The reliability within is:

[0091]

[0092] represents the probability, and z represents the counting sign of the number of flicker occurrences.

[0093] In the embodiment of the present application, when evaluating the reliability of ion electric propulsion based on the ion electric propulsion reliability evaluation model, due to It is related to the beam flickering frequency, so the reliability of ion electric propulsion can be analyzed according to the following mutually exclusive states:

[0094] State 1: Ion electric propulsion in time No beam flicker occurs within 10 seconds, that is, the beam flicker frequency is 0, and the reliability is:

[0095]

[0096] in, represents the reliability in state 1;

[0097] State 2: Ion electric propulsion in time Beam flicker occurs inside the beam, and the beam flicker frequency is 1, and the reliability is:

[0098]

[0099] in, represents the reliability in state 2, represents the parameters of the homogeneous Poisson process;

[0100] State 3: When the ion electric propulsion is at time Beam flicker occurs inside the beam, and the beam flicker frequency More than 1 time, and in The overall performance degradation of ion electric propulsion is less than Since the time interval between each breakdown, i.e. the impact interval, must be greater than , otherwise the ion electric propulsion fails, then at time Inner beam flicker frequency No more than , the reliability is:

[0101]

[0102] in, It indicates the reliability in state 3;

[0103] State 4: When the ion electric propulsion is at time Beam flicker occurs inside the beam, and the beam flicker frequency More than 1 time, and in The overall performance degradation of ion electric propulsion is greater than , then the ion electric propulsion must be at a certain moment The overall performance degradation reached . Remember the interval Frequency of beam flickering for , then the second gate failure threshold in this interval is ,therefore The value cannot exceed In the interval Inner beam flicker frequency is c, and within this range, the second gate failure threshold of ion electric propulsion burst is , so the value of c cannot exceed , the reliability is:

[0104]

[0105] in, represents the reliability in state 4, represents the density function;

[0106] At runtime , the state of ion electric propulsion is one of the above four states, and they are mutually exclusive events. Therefore, ion electric propulsion is at time The reliability of is the sum of the reliability under the four conditions, namely

[0107]

[0108] in, The value representing the final reliability evaluation result,

[0109] This allows for a quantitative evaluation of the reliability of ion electric propulsion at any moment.

[0110] In the present application, the ion electric propulsion reliability evaluation method collects a gate sputtering etching data set, a beam scintillation data set and an operating condition parameter data set for the ion electric propulsion reliability evaluation; performs ion electric propulsion gate sputtering etching degradation modeling and ion electric propulsion gate beam scintillation impact modeling for the ion electric propulsion reliability evaluation based on the gate sputtering etching data set, the beam scintillation data set and the operating condition parameter data set; performs ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation based on the ion electric propulsion gate sputtering etching degradation modeling and the ion electric propulsion gate beam scintillation impact modeling; determines the reliability of the ion electric propulsion reliability evaluation based on the ion electric propulsion reliability modeling and the beam scintillation data set. Based on the ion electric propulsion ground test status monitoring data and on-orbit telemetry data, combined with the ion electric propulsion working mechanism and model fitting related methods, this application incorporates the coupling effects such as the combination, superposition and induction between the ion electric propulsion grid sputtering etching and the beam scintillation energy impact into the ion electric propulsion reliability evaluation model; considering the coupling effect between the grid sputtering etching and the beam scintillation energy impact, the ion electric propulsion reliability evaluation model structure is improved, and the effectiveness and accuracy of the ion electric propulsion reliability evaluation model are improved. This application improves the accuracy of ion electric propulsion performance evaluation and life reliability evaluation, better supports the formulation of ion electric propulsion on-orbit application strategies based on service life reliability, and provides more accurate theoretical support for product optimization design.

[0111] The following are embodiments of the device of the present invention, which can be used to implement the method embodiments of the present invention. For details not disclosed in the device embodiments of the present invention, please refer to the method embodiments of the present invention.

[0112] See also Figure 2 , which shows a schematic diagram of the structure of an ion electric propulsion reliability evaluation device provided by an exemplary embodiment of the present invention. The device includes: a collection module 10000, a primary modeling module 20000, a secondary modeling module 30000 and a reliability determination module 40000.

[0113] The acquisition module 10000 is used to acquire a grid sputtering etching data set, a beam scintillation data set and an operating condition parameter data set for ion electric propulsion reliability evaluation;

[0114] The initial modeling module 20000 is used to perform ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling for the ion electric propulsion reliability evaluation according to the grid sputtering etching data set, the beam scintillation data set and the operating condition parameter data set;

[0115] A secondary modeling module 30000 is used to perform ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation according to the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling;

[0116] The reliability determination module 40000 is used to determine the reliability of the ion electric propulsion reliability evaluation based on the ion electric propulsion reliability modeling and the beam scintillation data set.

[0117] According to a preferred embodiment, the acquisition module 10000 is specifically used for:

[0118] Collecting the ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold for ion electric propulsion reliability evaluation; using the ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold as data in the gate sputtering etching data set for the ion electric propulsion reliability evaluation;

[0119] Collecting the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the accelerating gate voltage for the reliability evaluation of the ion electric propulsion; using the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the accelerating gate voltage as data in the operating condition parameter data set for the reliability evaluation of the ion electric propulsion;

[0120] The beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point for the reliability evaluation of the ion electric propulsion are collected; the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point are used as data in the beam flicker data set for the reliability evaluation of the ion electric propulsion.

[0121] According to a preferred embodiment, the re-modeling module 30000 is used to determine the overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation based on the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam flickering energy impact of the ion electric propulsion grid beam flickering impact modeling.

[0122] According to a preferred embodiment, the reliability determination module 40000 is used to determine the reliability of the ion electric propulsion reliability evaluation based on the overall performance degradation of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

[0123] It should be noted that the ion electric propulsion reliability evaluation device provided in the above embodiment only uses the division of the above functional modules as an example when executing the ion electric propulsion reliability evaluation method. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In addition, the ion electric propulsion reliability evaluation device provided in the above embodiment and the ion electric propulsion reliability evaluation method embodiment belong to the same concept, and the implementation process thereof is detailed in the method embodiment, which will not be repeated here.

[0124] In the present application, the ion electric propulsion reliability evaluation device collects the grid sputtering etching data set, beam flickering data set and operating condition parameter data set for ion electric propulsion reliability evaluation; according to the grid sputtering etching data set, the beam flickering data set and the operating condition parameter data set, the ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam flickering impact modeling for the ion electric propulsion reliability evaluation are performed; according to the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling, the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is performed; according to the ion electric propulsion reliability modeling and the beam flickering data set, the reliability of the ion electric propulsion reliability evaluation is determined. The present application incorporates the coupling effects such as the combination, superposition and induction between the ion electric propulsion grid sputtering etching and the beam flickering impact into the ion electric propulsion reliability evaluation model, improves the accuracy of the ion electric propulsion performance evaluation and life reliability evaluation, and better supports the formulation of the ion electric propulsion on-orbit application strategy based on the service life reliability. The present application improves the structure of the ion electric propulsion reliability evaluation model and improves the effectiveness and accuracy of the ion electric propulsion reliability evaluation model.

[0125] The present invention also provides a computer-readable medium having program instructions stored thereon, which, when executed by a processor, implement the ion electric propulsion reliability evaluation method provided by the above-mentioned various method embodiments.

[0126] The present invention also provides a computer program product comprising instructions, which, when executed on a computer, enables the computer to execute the ion electric propulsion reliability evaluation method of each of the above method embodiments.

[0127] See also Figure 3 , which is a schematic diagram of the structure of a terminal according to an embodiment of the present application. The terminal may include: at least one processor 1001, at least one network interface 1004, a user interface 1003, a memory 1005, and at least one communication bus 1002.

[0128] The communication bus 1002 is used to realize the connection and communication between these components.

[0129] The user interface 1003 may include a display screen (Display) and a camera (Camera), and the optional user interface 1003 may also include a standard wired interface and a wireless interface.

[0130] The network interface 1004 may optionally include a standard wired interface or a wireless interface (such as a WI-FI interface).

[0131] Among them, the processor 1001 may include one or more processing cores. The processor 1001 uses various interfaces and lines to connect various parts in the entire terminal, and executes various functions of the terminal and processes data by running or executing instructions, programs, code sets or instruction sets stored in the memory 1005, and calling data stored in the memory 1005. Optionally, the processor 1001 can be implemented in at least one hardware form of digital signal processing (Digital Signal Processing, DSP), field programmable gate array (Field-Programmable Gate Array, FPGA), and programmable logic array (Programmable Logic Array, PLA). The processor 1001 can integrate one or a combination of a central processing unit (Central Processing Unit, CPU), a graphics processing unit (Graphics Processing Unit, GPU) and a modem. Among them, the CPU mainly processes the operating system, user interface and application programs; the GPU is responsible for rendering and drawing the content to be displayed on the display screen; the modem is used to process wireless communications. It can be understood that the above-mentioned modem may not be integrated into the processor 1001, and it can be implemented separately through a chip.

[0132] Among them, the memory 1005 may include a random access memory (Random Access Memory, RAM) and may also include a read-only memory (Read-Only Memory). Optionally, the memory 1005 includes a non-transitory computer-readable storage medium. The memory 1005 can be used to store instructions, programs, codes, code sets or instruction sets. The memory 1005 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playback function, an image playback function, etc.), instructions for implementing the above-mentioned various method embodiments, etc.; the data storage area may store data involved in the above-mentioned various method embodiments, etc. The memory 1005 may optionally be at least one storage device located away from the aforementioned processor 1001. As Figure 3 As shown, the memory 1005 as a computer storage medium may include an operating system, a network communication module, a user interface module, and an ion electric propulsion reliability evaluation application.

[0133] exist Figure 3In the terminal shown, the user interface 1003 is mainly used to provide an input interface for the user and obtain the data input by the user; and the processor 1001 can be used to call the ion electric propulsion reliability evaluation application stored in the memory 1005, and specifically perform the following operations:

[0134] Collect grid sputtering and etching data sets, beam scintillation data sets, and operating condition parameter data sets for ion electric propulsion reliability evaluation;

[0135] According to the grid sputtering etching data set, the beam scintillation data set and the operating condition parameter data set, ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam scintillation impact modeling for the ion electric propulsion reliability evaluation are performed;

[0136] According to the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling, ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is performed;

[0137] The reliability of the ion electric propulsion reliability evaluation is determined based on the ion electric propulsion reliability modeling and the beam scintillation data set.

[0138] In one embodiment, when the processor 1001 executes the method of collecting a gate sputtering etching data set for ion electric propulsion reliability evaluation, the processor 1001 specifically performs the following operations:

[0139] Collect the running time of ion electric propulsion samples, gate sputtering etching depth and first gate failure threshold for ion electric propulsion reliability evaluation;

[0140] The ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold are used as data in a gate sputtering etching data set for the ion electric propulsion reliability evaluation.

[0141] In one embodiment, when the processor 1001 executes the step of collecting the operating condition parameter data set for ion electric propulsion reliability evaluation, the processor 1001 specifically performs the following operations:

[0142] Collect the grid inner and outer hole circle areas, grid design thickness, grid spacing, screen grid voltage and acceleration grid voltage for ion electric propulsion reliability evaluation;

[0143] The inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the acceleration gate voltage are used as data in the operating condition parameter data set for the ion electric propulsion reliability evaluation.

[0144] In one embodiment, when the processor 1001 executes the method of collecting a beam scintillation data set for evaluating the reliability of ion electric propulsion, the processor 1001 specifically performs the following operations:

[0145] Collect the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of grid material, second grid failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point for ion electric propulsion reliability evaluation;

[0146] The beam flicker frequency, the single beam flicker pulse current, the single beam flicker pulse width, the mass loss rate caused by the unit charge transfer of the gate material, the second gate failure threshold corresponding to the beam flicker energy impact and the impact interval corresponding to the transition point are used as data in the beam flicker data set for the ion electric propulsion reliability evaluation.

[0147] In one embodiment, when the processor 1001 performs the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation according to the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling, the processor 1001 specifically performs the following operations:

[0148] The overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is determined based on the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam scintillation energy impact of the ion electric propulsion grid beam scintillation impact modeling.

[0149] In one embodiment, when the processor 1001 determines the reliability of the ion electric propulsion reliability evaluation according to the ion electric propulsion reliability modeling and the beam scintillation data set, the processor 1001 specifically performs the following operations:

[0150] The reliability of the ion electric propulsion reliability evaluation is determined according to the overall performance degradation amount of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

[0151] In the present application, the ion electric propulsion reliability evaluation method collects the grid sputtering etching data set, beam flickering data set and operating condition parameter data set for ion electric propulsion reliability evaluation; based on the grid sputtering etching data set, the beam flickering data set and the operating condition parameter data set, the ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam flickering impact modeling for the ion electric propulsion reliability evaluation are performed; based on the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling, the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is performed; based on the ion electric propulsion reliability modeling and the beam flickering data set, the reliability of the ion electric propulsion reliability evaluation is determined. The present application incorporates the coupling effects such as the combination, superposition and induction between the ion electric propulsion grid sputtering etching and the beam flickering impact into the ion electric propulsion reliability evaluation model, improves the accuracy of the ion electric propulsion performance evaluation and life reliability evaluation, and better supports the formulation of the ion electric propulsion on-orbit application strategy based on the service life reliability. The present application improves the structure of the ion electric propulsion reliability evaluation model and improves the effectiveness and accuracy of the ion electric propulsion reliability evaluation model.

[0152] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing related hardware through a computer program, and the program can be stored in a computer-readable storage medium, and when the program is executed, it can include the processes of the embodiments of the above-mentioned methods. The storage medium can be a disk, an optical disk, a read-only storage memory, or a random access memory, etc.

[0153] The above disclosure is only the preferred embodiment of the present application, which certainly cannot be used to limit the scope of rights of the present application. Therefore, equivalent changes made according to the claims of the present application are still within the scope covered by the present application.

Claims

1. A method for evaluating the reliability of ion electric propulsion, characterized in that: The following steps are involved: Collect grid sputtering and etching data sets, beam scintillation data sets, and operating condition parameter data sets for ion electric propulsion reliability evaluation; According to the grid sputtering etching data set, the beam flickering data set and the operating condition parameter data set, the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling for the ion electric propulsion reliability evaluation are performed; wherein the ion electric propulsion sputtering etching degradation amount calculation formula of the ion electric propulsion grid sputtering etching degradation modeling is: ， Where t represents the running time of the ion electric propulsion sample, represents the ion electric propulsion sputtering etching degradation amount when the ion electric propulsion sample runs for time t, is the degradation amount at the initial moment, is the sputtering etching degradation rate, which follows a normal distribution A random variable, express The mean value of express The variance of is the random perturbation; because the working electric field of ion electric propulsion will change under the action of beam flickering, thus affecting the sputtering etching, the sputtering etching degradation process also satisfies the nonlinear evolution, , denote the linear function of time variables and the nonlinear function of time variables respectively, They represent the significance screening coefficient of the linear term and the significance screening coefficient of the nonlinear term respectively. When the value is 0, it means that the term has no effect on sputtering etching, and when the value is 1, it means the opposite. The performance degradation calculation formula of the beam scintillation energy impact modeling of the ion electric propulsion grid beam scintillation impact is: ， In the formula, is the performance degradation caused by the beam scintillation energy impact during the operation time t of the ion electric propulsion sample, is the beam flashing frequency during the operation time t of the ion electric propulsion sample, is the enhancement factor, It means i Ion electric propulsion, j The amount of performance degradation caused by a single beam scintillation energy impact at time.

2. The ion electric propulsion reliability evaluation method according to claim 1, characterized in that: The acquisition of a grid sputtering etching data set for ion electric propulsion reliability evaluation includes: Collect the running time of ion electric propulsion samples, gate sputtering etching depth and first gate failure threshold for ion electric propulsion reliability evaluation; The ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold are used as data in a gate sputtering etching data set for the ion electric propulsion reliability evaluation.

3. The ion electric propulsion reliability evaluation method according to claim 1, characterized in that: The operating condition parameter data set collected for ion electric propulsion reliability evaluation includes: Collect the grid inner and outer hole circle areas, grid design thickness, grid spacing, screen grid voltage and acceleration grid voltage for ion electric propulsion reliability evaluation; The inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the acceleration gate voltage are used as data in the operating condition parameter data set for the ion electric propulsion reliability evaluation.

4. The ion electric propulsion reliability evaluation method according to claim 1, characterized in that: The beam scintillation data set for collecting ion electric propulsion reliability evaluation includes: Collect the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of grid material, second grid failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point for ion electric propulsion reliability evaluation; The beam flicker frequency, the single beam flicker pulse current, the single beam flicker pulse width, the mass loss rate caused by the unit charge transfer of the gate material, the second gate failure threshold corresponding to the beam flicker energy impact and the impact interval corresponding to the transition point are used as data in the beam flicker data set for the ion electric propulsion reliability evaluation.

5. The ion electric propulsion reliability evaluation method according to claim 4, characterized in that: The ion electric propulsion reliability modeling for evaluating the ion electric propulsion reliability based on the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling includes: The overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation is determined based on the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam scintillation energy impact of the ion electric propulsion grid beam scintillation impact modeling.

6. The ion electric propulsion reliability evaluation method according to claim 5, characterized in that: Determining the reliability of the ion electric propulsion reliability evaluation according to the ion electric propulsion reliability modeling and the beam scintillation data set includes: The reliability of the ion electric propulsion reliability evaluation is determined according to the overall performance degradation amount of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

7. An ion electric propulsion reliability evaluation device, the device being used to execute the ion electric propulsion reliability evaluation method according to any one of claims 1 to 6, characterized in that: include: An acquisition module is used to acquire grid sputtering and etching data sets, beam scintillation data sets, and operating condition parameter data sets for ion electric propulsion reliability evaluation; The initial modeling module is used to perform ion electric propulsion grid sputtering etching degradation modeling and ion electric propulsion grid beam flickering impact modeling for the ion electric propulsion reliability evaluation according to the grid sputtering etching data set, the beam flickering data set and the operating condition parameter data set; wherein the ion electric propulsion sputtering etching degradation amount calculation formula of the ion electric propulsion grid sputtering etching degradation modeling is: ， Where t represents the running time of the ion electric propulsion sample, represents the ion electric propulsion sputtering etching degradation amount when the ion electric propulsion sample runs for time t, is the degradation amount at the initial moment, is the sputtering etching degradation rate, which follows a normal distribution A random variable, express The mean value of express The variance of is the random perturbation; because the working electric field of ion electric propulsion will change under the action of beam flickering, thus affecting the sputtering etching, the sputtering etching degradation process also satisfies the nonlinear evolution, , denote the linear function of time variables and the nonlinear function of time variables respectively, They represent the significance screening coefficient of the linear term and the significance screening coefficient of the nonlinear term respectively. When the value is 0, it means that the term has no effect on sputtering etching, and when the value is 1, it means the opposite. The performance degradation calculation formula of the beam scintillation energy impact modeling of the ion electric propulsion grid beam scintillation impact is: ， In the formula, is the performance degradation caused by the beam scintillation energy impact during the operation time t of the ion electric propulsion sample, is the beam flashing frequency during the operation time t of the ion electric propulsion sample, is the enhancement factor, It means i Ion electric propulsion, j The performance degradation caused by the energy impact of a single beam scintillation at a certain moment; A secondary modeling module is used to perform ion electric propulsion reliability modeling for evaluating the ion electric propulsion reliability based on the ion electric propulsion grid sputtering etching degradation modeling and the ion electric propulsion grid beam flickering impact modeling; The reliability determination module is used to determine the reliability of the ion electric propulsion reliability evaluation according to the ion electric propulsion reliability modeling and the beam scintillation data set.

8. The ion electric propulsion reliability evaluation device according to claim 7, characterized in that: The acquisition module is specifically used for: Collecting the ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold for ion electric propulsion reliability evaluation; using the ion electric propulsion sample operation time, the gate sputtering etching depth and the first gate failure threshold as data in the gate sputtering etching data set for the ion electric propulsion reliability evaluation; Collecting the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the accelerating gate voltage for the reliability evaluation of the ion electric propulsion; using the inner and outer hole circle areas of the gate, the designed gate thickness, the gate spacing, the screen gate voltage and the accelerating gate voltage as data in the operating condition parameter data set for the reliability evaluation of the ion electric propulsion; The beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point for the reliability evaluation of the ion electric propulsion are collected; the beam flicker frequency, single beam flicker pulse current, single beam flicker pulse width, mass loss rate caused by unit charge transfer of gate material, second gate failure threshold corresponding to beam flicker energy impact and impact interval corresponding to its transition point are used as data in the beam flicker data set for the reliability evaluation of the ion electric propulsion.

9. The ion electric propulsion reliability evaluation device according to claim 8, characterized in that: The re-modeling module is used to determine the overall performance degradation amount of the ion electric propulsion reliability modeling for the ion electric propulsion reliability evaluation according to the ion electric propulsion sputtering etching degradation amount of the ion electric propulsion grid sputtering etching degradation modeling and the performance degradation amount caused by the beam flickering energy impact of the ion electric propulsion grid beam flickering impact modeling.

10. The ion electric propulsion reliability evaluation device according to claim 9, characterized in that: The reliability determination module is used to determine the reliability of the ion electric propulsion reliability evaluation according to the overall performance degradation amount of the ion electric propulsion reliability modeling, the second grid failure threshold, the beam flicker frequency and the impact interval.

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