Seed layer preparation method and carrier

Abstract

The present application relates to a method for preparing a seed layer and a carrier, including the following steps: providing a substrate stage with a cold air pipeline; placing a tray with an opening on the substrate stage, so that the opening is in fluid communication with the air outlet of the cold air pipeline, and the opening avoids the through hole of the substrate to be processed; placing the substrate with a through hole on the tray; inputting cooling gas into the cold air pipeline, so that the cooling gas contacts the substrate through the tray; forming a thin film layer on the substrate. Through the design of the substrate stage and the tray in conjunction with the substrate, on the one hand, the cooling effect on the substrate is guaranteed, and the cooling gas can be evenly distributed to various positions of the substrate through the substrate stage and the tray, and the cooling effect is better and more uniform. Therefore, in the film formation process of the seed layer, the uniformity of the substrate temperature is guaranteed, thereby avoiding the influence of uneven temperature on the uniformity of the film quality; on the other hand, it is conducive to reducing the air outlet, and under the premise of the same cooling effect, the effect of reducing the amount of gas used is achieved, which is conducive to cost saving.

Description

Technical Field

[0001] The present application relates to the field of semiconductor devices, and in particular to a method for preparing a seed layer and a carrier. Background Art

[0002] Chiplets, also known as small chips, are key to the development and integration of heterogeneous integration technology, which lies in the integration of multi-scale and multi-dimensional chip interconnection, thereby improving power efficiency and reducing latency, providing smaller size and higher performance chips for high-performance computing, artificial intelligence, and smart terminals.

[0003] The vertical interconnection of the chip relies on technologies such as Through Silicon Via (TSV) or Through Glass Via (TGV), and the horizontal interconnection is achieved through the Re-Distribution Layer (RDL) technology.

[0004] The metal filling of TGV and TSV through-holes is generally done by first using magnetron sputtering to deposit a copper (Cu) seed layer on the substrate and on the sidewalls of the through-holes, and then electroplating Cu to fill the through-holes with metal Cu. However, during the production of the TGV and TSV seed layers, since the through-holes of the substrate are through-holes and the material difference between the sputtered film layer and the substrate stage is at an angle, part of the sputtered metal will pass through the through-holes and be deposited on the substrate stage.

[0005] In addition, some sputtered metals, especially metal Cu, have poor adhesion to the substrate. Over time, the film layer may fall off, resulting in the risk of particles in the product, which will cause random failures in production and affect production consistency.

[0006] The conventional solution is to place a tray (carrier) under the TGV or TSV substrate. After the carrier has been used for a period of time, the original carrier is taken out for cleaning and replaced with a new or cleaned carrier. In addition, for TGV and TSV technologies, the coating time is usually long and a high RF (radio frequency) bias is applied. The metal atoms sputtered onto the substrate have high energy, so the substrate stage must be cooled. However, the commonly used carrier is set between the substrate stage and the substrate, which affects the cooling effect. Summary of the invention

[0007] Based on this, it is necessary to provide a method for preparing a seed layer and a carrier.

[0008] In one embodiment, a method for preparing a seed layer comprises the steps of:

[0009] Providing a substrate stage with a cooling air pipeline;

[0010] Placing a tray with an opening on the substrate stage, so that the opening is in fluid communication with the air outlet of the cold air pipeline, and the opening avoids the through hole of the substrate to be processed;

[0011] placing the substrate having the through hole on the tray;

[0012] Inputting cooling gas into the cold air pipeline so that the cooling gas contacts the substrate through the tray;

[0013] A thin film layer is formed on the substrate.

[0014] The above-mentioned method for preparing the seed layer, through the design of the substrate stage and the tray cooperating with the substrate, on the one hand ensures the cooling effect on the substrate. The cooling gas can be evenly distributed to various positions of the substrate through the substrate stage and the tray, and the cooling effect is better and more uniform. Therefore, in the film formation process of the seed layer, the uniformity of the substrate temperature is guaranteed, thereby avoiding the influence of temperature unevenness on the uniformity of the film quality; on the other hand, it is beneficial to reduce the gas outlet, and under the premise of achieving the same cooling effect, the effect of reducing the use of cooling gas is achieved, which is beneficial to saving costs.

[0015] In one embodiment, the substrate is a glass substrate, and the through hole is a TGV through hole; or,

[0016] The substrate is a silicon substrate, and the through hole is a TSV through hole.

[0017] In one embodiment, the substrate has a process effective area and a process ineffective area, and the opening is located below the process ineffective area.

[0018] Illustratively, in one of the embodiments, the tray further has a second air channel in fluid communication with the opening, the second air channel is located below the process effective area, and the second air channel avoids the through hole of the substrate.

[0019] In one embodiment, the cooling gas is input into the cold air pipeline, including: using an inert gas as the cooling gas, the gas pressure in the substrate stage and the tray is 1 torr to 10 torr, and the gas flow rate is 2 sccm to 20 sccm.

[0020] In one of the embodiments, inputting cooling gas into the cold air pipeline includes: inputting pre-cooled cooling gas.

[0021] In one embodiment, the passage area of ​​the air outlet is greater than or equal to the passage area of ​​the opening; or,

[0022] The air outlet holes are arranged in one-to-one correspondence with the openings, or the number of the air outlet holes is less than the number of the openings.

[0023] In one embodiment, forming a thin film layer on the substrate comprises:

[0024] forming a first film layer on the substrate;

[0025] A second film layer is formed on the first film layer.

[0026] In one embodiment, the first film layer is a Cu film layer, and the second film layer is a Ti film layer.

[0027] In one embodiment, a seed layer preparation stage includes a substrate stage and a tray detachably disposed on the substrate stage;

[0028] The substrate stage has a cold air pipeline, and the tray has an opening, and the opening is fluidically connected to an air outlet of the cold air pipeline;

[0029] The opening is configured to avoid the through hole of the substrate.

[0030] In one embodiment, the cold air pipeline has an air inlet, a first air duct and an air outlet that are fluidly connected;

[0031] The passage area of ​​the air inlet is larger than the passage area of ​​the air outlet;

[0032] The passage area of ​​the air outlet is greater than or equal to the passage area of ​​the opening;

[0033] The air outlet holes are arranged in one-to-one correspondence with the openings, or the number of the air outlet holes is less than the number of the openings.

[0034] Illustratively, in one of the embodiments, the tray further has a second air channel in fluid communication with the opening, and the second air channel avoids the through hole of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] FIG. 1 is a schematic flow chart of the method for preparing the seed layer described in the present application.

[0037] FIG. 2 is a schematic structural diagram of an embodiment of a preparation platform for a seed layer described in the present application.

[0038] FIG. 3 is a schematic diagram of an application of the embodiment shown in FIG. 2 .

[0039] FIG. 4 is a schematic structural diagram of a substrate of the embodiment shown in FIG. 3 .

[0040] FIG. 5 is a schematic diagram of the embodiment shown in FIG. 4 in another direction.

[0041] FIG. 6 is a schematic structural diagram of another embodiment of a preparation platform for the seed layer described in the present application.

[0042] FIG. 7 is a schematic diagram of an application of the embodiment shown in FIG. 6 .

[0043] FIG. 8 is a schematic diagram of further film formation of the embodiment shown in FIG. 7 .

[0044] FIG. 9 is a schematic structural diagram of a substrate of another embodiment of a preparation platform for a seed layer described in the present application.

[0045] FIG. 10 is a schematic structural diagram of a tray applied to the substrate shown in FIG. 9 .

[0046] FIG. 11 is a schematic structural diagram of a tray in which the tray shown in FIG. 10 is applied to the substrate shown in FIG. 9 .

[0047] FIG. 12 is a schematic structural diagram of a substrate stage applied to the tray shown in FIG. 11 .

[0048] FIG. 13 is a schematic structural diagram of the substrate stage of the embodiment shown in FIG. 2 .

[0049] FIG. 14 is a schematic structural diagram of the tray of the embodiment shown in FIG. 2 .

[0050] Figure numerals: substrate 200, through hole 210, substrate stage 300, air outlet hole 310, air flow direction 320, first air channel 330, air inlet hole 340, tray 400, opening 410, second air channel 420, RF bias source 500, first film layer 600, second film layer 700. DETAILED DESCRIPTION

[0051] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0052] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it may be directly on the other component or there may also be a central component. When a component is considered to be "connected to" another component, it may be directly connected to the other component or there may be a central component at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in the specification of this application are for illustrative purposes only and do not represent the only implementation method.

[0053] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0054] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first feature is directly in contact with the second feature, or the first feature and the second feature are in contact indirectly through an intermediate medium. Moreover, a first feature being “above”, “above”, or “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, or “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0055] Unless otherwise defined, all technical and scientific terms used in the specification of this application have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in the specification of this application includes any and all combinations of one or more related listed items.

[0056] The present application discloses a method for preparing a seed layer and a carrier, which include some or all of the technical features of the following embodiments; as an example, the carrier for preparing the seed layer includes some or all of the following structures. The method for preparing the seed layer and the carrier are described in detail below in conjunction with Figures 1 to 14. In one embodiment of the present application, a method for preparing a seed layer is shown in Figure 1, which includes the steps of: providing a substrate stage with a cold air pipeline; arranging a tray with an opening on the substrate stage, so that the opening is fluidly connected to the air outlet of the cold air pipeline, and the opening avoids the through hole of the substrate to be processed; arranging the substrate with the through hole on the tray; inputting cooling gas into the cold air pipeline so that the cooling gas contacts the substrate through the tray; and forming a thin film layer on the substrate. The above-mentioned method for preparing the seed layer, through the design of the substrate stage and the tray cooperating with the substrate, on the one hand ensures the cooling effect on the substrate. The cooling gas can be evenly distributed to various positions of the substrate through the substrate stage and the tray, and the cooling effect is better and more uniform. Therefore, in the film formation process of the seed layer, the uniformity of the substrate temperature is guaranteed, thereby avoiding the influence of temperature unevenness on the uniformity of the film quality; on the other hand, it is beneficial to reduce the gas outlet, and under the premise of the same cooling effect, the effect of reducing the gas usage is achieved, which is beneficial to saving costs.

[0057] In one embodiment, a seed layer preparation carrier is shown in FIG2, which includes a substrate stage 300 and a tray 400 detachably disposed on the substrate stage 300; illustratively, the tray 400 is snap-connected or screwed to the substrate stage 300 so that it can be removed and cleaned when necessary. In conjunction with FIG3, the tray 400 is used to carry the substrate 200 to be processed. Such a design allows the tray 400 to be removed and cleaned after use. In one embodiment, the seed layer preparation carrier adopts the seed layer preparation method described in any embodiment, that is, the seed layer preparation carrier adopts each step of the seed layer preparation method described in any embodiment.

[0058] As an example, the substrate 200 is shown in FIG. 4 and FIG. 5 , and the substrate 200 is provided with through holes 210 to realize the interconnection of the chips in the vertical direction. Taking the TGV substrate as an example, its size can be 300mm×300mm or other specifications, and the thickness is usually 0.4mm to 1.5mm. The density of the through holes 210 is about 0.1% to 10%; during the manufacturing process of the TGV substrate, the temperature is required to be lower than 150°C, and the temperature uniformity index is required to be no more than 10%.

[0059] In one embodiment, the substrate 200 is a glass substrate, and the through hole 210 is a TGV through hole; or, the substrate 200 is a silicon substrate, and the through hole 210 is a TSV through hole. In the subsequent process, the surface of the substrate 200 and the hole wall portion of the through hole 210 will form a thin film layer by a related process such as magnetron sputtering, and the thin film layer is used as a seed layer. As an example, the aperture of the through hole 210 is 10μm to 100μm. It can be understood by those skilled in the art that the above aperture is only an example and is not a special limitation on the substrate 200 and its through hole 210. It should be noted that the through hole 210 described in each embodiment of the present application includes a hole that completely penetrates the substrate 200 in the thickness direction, and a hole that does not completely penetrate the substrate 200 in the thickness direction, the latter of which can also be called a blind hole. With such a design, the substrate 200 can meet the requirements of processes such as TGV or TSV.

[0060] As an example, as shown in FIG2 , the substrate stage 300 has a cold air pipeline, and the tray 400 has an opening 410, and the opening 410 is in fluid communication with the air outlet 310 of the cold air pipeline; in conjunction with FIG3 , the opening 410 is configured to avoid the through hole 210 of the substrate 200. Exemplarily, the aperture or through area of ​​the opening 410 in the central area of ​​the tray 400 is larger than the aperture or through area of ​​the opening 410 in the edge area of ​​the tray 400, so as to form a stronger cooling effect in the central area of ​​the substrate 200 relative to the edge area of ​​the substrate 200. Exemplarily, the distribution density of the opening 410 in the central area of ​​the tray 400 is larger than the distribution density of the opening 410 in the edge area of ​​the tray 400, so as to form a more sufficient cooling effect in the central area of ​​the substrate 200 relative to the edge area of ​​the substrate 200, so as to adapt to the application environment where the heat in the center of the substrate 200 is generally greater than the heat in the surrounding area, thereby improving the cooling uniformity of the substrate 200.

[0061] In one embodiment, the substrate 200 has a process effective area and a process invalid area, and the opening 410 is located below the process invalid area. Those skilled in the art can understand the specific process effective area and process invalid area, which will not be described here. Such a design ensures the cooling effect on the substrate 200, and the cooling gas can be evenly distributed to various positions of the substrate 200 through the substrate stage 300 and the tray 400, so that the cooling effect is better and more uniform; and the cooling gas enters the opening 410 through the cold air pipeline to cool the substrate 200, but will not directly enter the through hole 210, so that on the premise of achieving the cooling effect on the substrate 200, it avoids affecting the formation of the seed layer, thereby ensuring the uniformity of the temperature of the substrate 200 during the film formation process of the seed layer, and then avoiding the uneven temperature from affecting the uniformity of the film quality. In addition, such a structural design is conducive to reducing the gas outlet, and on the premise of achieving the same cooling effect, it can achieve the effect of reducing the amount of cooling gas used, which is conducive to saving costs.

[0062] Exemplarily, as shown in Fig. 6, the seed layer preparation stage further includes a radio frequency bias source 500, and the substrate stage 300 is grounded through the radio frequency bias source 500. In this way, radio frequency bias energy can be provided to the substrate stage 300 to achieve isotropic deposition of the metal film layer.

[0063] Based on the preparation stage of the seed layer shown in FIG6 , in combination with FIG7 , the substrate 200 having the through hole 210 is disposed on the tray 400, and then a thin film layer is formed on the substrate 200. FIG7 shows that a first film layer 600 is formed on the substrate 200. As an example, the first film layer 600 is a Cu layer, and it can be understood that the first film layer 600 can also be other metal layers, which can be set according to actual production requirements.

[0064] Based on the preparation stage of the seed layer shown in FIG. 7 , in combination with FIG. 8 , a second film layer 700 is further formed on the first film layer 600. Similarly, the second film layer 700 can also be other metal layers, which can be set according to the actual production needs. As an example, the first film layer 600 is a Cu layer, and the second film layer 700 is a Ti layer. The first film layer 600 and the second film layer 700 serve as a seed layer together. As an example, a seed layer is deposited inside the through hole of the glass substrate 200 by physical vapor deposition, after which bottom-up electroplating can be performed to achieve seamless filling of the TGV process.

[0065] In one embodiment, as shown in FIG. 12 and FIG. 13 , the cold air pipeline has an air inlet 340, a first air channel 330 and an air outlet 310 in fluid communication; illustratively, the air inlet 340 is in fluid communication with each of the air outlets 310, and each of the first air channels 330 is in fluid communication with at least two of the air outlets 310, so as to be in fluid communication with the air inlet 340 through the air outlets 310, and the first air channel 330 is located on the upper surface of the substrate stage 300, so that the cooling gas contacts the tray 400 through the first air channel 330, or the cooling gas flows directly or indirectly into the opening 410 of the tray 400 through the first air channel 330. As an example, in the use direction, that is, in the gravity direction, the air inlet 340 is located at the bottom of the substrate stage 300, and the first air channel 330 and the air outlet 310 are located at the top of the substrate stage 300. Exemplarily, the tray 400 is provided with a third air channel corresponding to the first air channel 330, the third air channel is fluidly connected to the opening 410, and the shape of the third air channel is mirrored to the first air channel 330, so that when the tray 400 is set on the substrate stage 300, the parts of the first air channel 330 are stacked with the parts of the third air channel, so that the cooling gas directly enters the third air channel through the first air channel 330, and then enters the opening 410 through the third air channel. For an embodiment with a second air channel 420, the third air channel is fluidly connected to the second air channel 420. As an example, the third air channel is directly fluidly connected to the second air channel 420, or the third air channel is indirectly fluidly connected to the second air channel 420 through the opening 410, so that the cooling gas also enters the second air channel 420 through the third air channel. Such a design further improves the cooling uniformity of the tray 400 itself, and on this premise further improves the cooling uniformity of the substrate 200, and is further conducive to reducing the gas outlets, thereby achieving the effect of reducing the amount of cooling gas used while achieving the same cooling effect, thereby helping to save costs.

[0066] In one embodiment, the passage area of ​​the air inlet 340 is greater than the passage area of ​​the air outlet 310; illustratively, the substrate stage 300 is provided with only one air inlet 340 and at least two air outlets 310. In one embodiment, the passage area of ​​the air outlet 310 is greater than or equal to the passage area of ​​the opening 410; or, the air outlet 310 is provided in a one-to-one correspondence with the opening 410, or the number of the air outlet 310 is less than the number of the opening 410. Such a design, on the one hand, is conducive to simplifying the centralized input of cooling gas and facilitating the connection of the pipeline structure to input cooling gas; on the other hand, it is conducive to the uniform output of cooling gas, improving the uniform cooling effect on the tray 400, thereby improving the uniform cooling effect on the substrate 200.

[0067] In one embodiment, the passage area of ​​the air outlet 310 is greater than or equal to the passage area of ​​the opening 410; for the embodiment in which the passage area of ​​the air outlet 310 is equal to the passage area of ​​the opening 410, in combination with the embodiment in which the air outlet 310 and the opening 410 are arranged in a one-to-one correspondence, such a structural design is conducive to effectively and accurately delivering cooling gas to the opening 410. For the embodiment in which the passage area of ​​the air outlet 310 is greater than the passage area of ​​the opening 410, in combination with the embodiment in which the air outlet 310 and the opening 410 are arranged in a one-to-one correspondence, such a structural design is conducive to improving the cooling effect of the tray 400 itself, so that the tray 400 itself provides a part of the cooling environment.

[0068] In one of the embodiments, the air outlet holes 310 are arranged in a one-to-one correspondence with the openings 410, or the number of the air outlet holes 310 is less than the number of the openings 410; in combination with the embodiment in which the passing area of ​​the air outlet holes 310 is greater than or equal to the passing area of ​​the openings 410, it is beneficial to achieve some preset cooling purposes.

[0069] Exemplarily, as shown in FIG. 11 and FIG. 14 , the tray 400 further has a second air channel 420 in fluid communication with the opening 410, and the second air channel 420 avoids the through hole 210 of the substrate 200. In one embodiment, the tray 400 further has a second air channel 420 in fluid communication with the opening 410, the second air channel 420 is located below the process effective area, and the second air channel 420 avoids the through hole 210 of the substrate 200. Exemplarily, the second air channel 420 is arranged in a horizontal and vertical manner and is located on the surface of the tray 400. That is, the second air channel 420 includes two groups of air channels, the air channels in the first group of air channels are parallel to each other, the air channels in the second group of air channels are also parallel to each other, and any air channel in the first group of air channels is perpendicular to any air channel in the second group of air channels. The design of the second air duct 420 cooperating with the opening 410 and avoiding the through hole 210 together is, on the one hand, conducive to improving the uniform cooling effect of the substrate 200 and avoiding the risk of product defects caused by partial overheating; on the other hand, it is conducive to achieving accurate control of the process temperature of the substrate 200 and ensuring that the temperature of the substrate 200 at all positions is in a state that meets the production process requirements.

[0070] Exemplarily, the through holes 210 of the substrate 200 are regularly distributed into N groups, and the N groups of through holes 210 are arranged in a matrix, and the through holes 210 in each group are also arranged in a matrix, so that the openings 410 and the second air ducts 420 avoid the through holes 210 of the substrate 200. As an example, as shown in FIG9 , the through holes 210 of the substrate 200 are regularly distributed into 4 groups, that is, N is 4, and the 4 groups of through holes 210 are arranged in a matrix of 2 rows and 2 columns. The through holes 210 in each group are also arranged in a matrix of 3 rows and 3 columns; the corresponding tray 400 is shown in FIG10 , and the substrate 200 is disposed on the tray 400 as shown in FIG11 , which shows that the openings 410 and the second air ducts 420 avoid the through holes 210 of the substrate 200. It is understandable that, in this case, even if the through hole 210 completely penetrates the substrate 200, the through hole 210 is a blind hole relative to the overall structure of the tray 400 and the substrate 200, that is, with the tray 400 as the bottom, any through hole 210 is neither connected to the opening 410 nor to the second air channel 420. With such a design, the cooling gas can be evenly distributed to various positions of the substrate 200 through the substrate stage 300 and the tray 400, thereby ensuring a uniform cooling effect on the substrate 200, and thus avoiding the uniformity of the film quality of the seed layer being affected by uneven temperature during the film formation process of the seed layer.

[0071] Based on the seed layer preparation carrier, in one embodiment, the present application also provides a seed layer preparation method, which is implemented based on the seed layer preparation carrier of any embodiment, that is, the seed layer preparation method adopts the seed layer preparation carrier of any embodiment. Since the seed layer preparation carrier of any embodiment is adopted, the seed layer preparation method also has the beneficial technical effects of the device, which will not be described in detail here.

[0072] In one of the embodiments, a method for preparing a seed layer includes the following steps: providing a substrate stage 300 with a cold air pipeline; placing a tray 400 with an opening 410 on the substrate stage 300, so that the opening 410 is fluidically connected to the air outlet 310 of the cold air pipeline, and the opening 410 avoids the through hole 210 of the substrate 200 to be processed; placing the substrate 200 with the through hole 210 on the tray 400; inputting cooling gas into the cold air pipeline so that the cooling gas contacts the substrate 200 through the tray 400; forming a thin film layer on the substrate 200; illustratively, using the thin film layer as a seed layer.

[0073] In one embodiment, inputting cooling gas into the cold air pipeline includes: using inert gas as the cooling gas, the gas pressure in the substrate stage 300 and the tray 400 is 1 torr to 10 torr, and the gas flow rate is 2 sccm to 20 sccm; or, inputting cooling gas into the cold air pipeline includes: inputting pre-cooled cooling gas. The pre-cooling of the cooling gas can be set according to actual needs. As an example, the pre-cooled cooling gas is 15 degrees Celsius or 10 degrees Celsius. Those skilled in the art will understand that this is only an example and not a limitation on the cooling gas.

[0074] In one embodiment, forming a thin film layer on the substrate 200 includes: forming a first film layer 600 on the substrate 200; and forming a second film layer 700 on the first film layer 600. In one embodiment, the first film layer 600 is a Cu film layer, and the second film layer 700 is a Ti film layer.

[0075] The following continues to illustrate the method for preparing the seed layer and the preparation stage of the seed layer with reference to Figures 1 to 14. In one embodiment, a TGV substrate with glass through holes is first provided as the substrate 200, and a substrate stage with a cold air pipeline for gas cooling is provided, and the gas is generally a commonly used inert gas, including but not limited to Ar and He.

[0076] Then, a tray 400 with openings 410 is provided. The tray 400 is designed to be placed above the substrate stage 300, and the two are fixed together by bolts, and are used to place the TGV substrate for deposition. Exemplarily, the number and size of the openings 410 of the tray 400 are appropriately distributed according to the size of the substrate 200, and can be evenly distributed or unevenly distributed. For example, the number and / or density of the openings 410 in the center can be greater than those in the surroundings because the heat in the center of the substrate 200 is usually greater than the heat in the surroundings.

[0077] The number and size of the openings 410 of the tray 400 may be the same as or different from the number and size of the outlet holes 310 for gas cooling of the substrate stage 300. As an example, the area of ​​the openings 410 of the tray 400 is larger than the area of ​​the outlet holes 310 of the substrate stage 300. In the embodiments of the present application, when the TGV seed layer TiCu film is produced, a tray 400 with openings 410 is provided above the substrate stage 300 in the sputtering deposition chamber. The function of the openings 410 is to ensure that the gas cooling of the substrate stage 300 can be transferred to the substrate.

[0078] In one of the embodiments, when the TGV seed layer TiCu film is produced, a tray 400 with an opening 410 is arranged above the substrate stage 300 of the sputtering deposition chamber, and the tray 400 can be disassembled for cleaning and replacement; an air inlet 340 is arranged below the substrate stage 300 of the sputtering deposition chamber as a cooling gas inlet, and the substrate stage 300 is provided with an air outlet 310 connected to the air inlet 340.

[0079] The tray 400 has openings 410 connected to the air outlets 310, and the number and density of the openings 410 may be uniform or non-uniform; the number and size of the openings 410 may be the same as the number and size of the air outlets 310 for gas cooling of the substrate stage 300, or may be different, preferably the same or the area of ​​the openings 410 of the tray 400 is larger than the area of ​​the openings 410 of the substrate stage 300. The positions of the openings 410 of the tray 400 may correspond one-to-one to the positions of the air outlets 310 of the substrate stage 300, or may not correspond one-to-one. As an example, the positions of the air outlets 310 of the substrate stage 300 correspond to the positions of the openings 410 of the tray 400.

[0080] Furthermore, the gas distribution channels and air holes of the tray 400, including the opening 410 and the second air channel 420, need to avoid the TGV via. As an example, the opening 410 is set in the process invalid area of ​​the TGV substrate, and the second air channel 420 is set in the process valid area of ​​the TGV substrate.

[0081] As an example, the air inlet 340 of the substrate stage 300 is larger than the air outlet 310 of the substrate stage 300; as an example, the air outlet 310 of the substrate stage 300 coincides with the opening 410 of the tray 400 or the opening 410 of the tray 400 is more than the air outlet 310 of the substrate stage 300; as an example, the air outlet 310 of the substrate stage 300 is larger than the opening 410 of the tray 400.

[0082] In this way, the substrate stage 300 and the tray 400 achieve uniform gas distribution through structures such as the air outlet 310, the first air channel 330 and the opening 410, thereby ensuring the cooling effect on the substrate 200 while maintaining a small flow of cooling gas and a high air pressure; as an example, the flow rate of the cooling gas is less than 20sccm, and illustratively, the air pressure of the cooling gas is greater than 3torr to ensure the cooling effect.

[0083] As an example, the gas flow rate of the cooling gas used for the substrate 200 or the substrate stage 300 is 2 sccm to 20 sccm, that is, the gas flow rate introduced during the process is 2 sccm to 20 sccm, and the gas pressure in the cooling gas layer between the substrate 200 and the tray 400 needs to be controlled at 1 torr to 10 torr, that is, the gas pressure in the cooling gas filling area between the substrate 200 and the tray 400, and the tray 400 and the substrate stage 300 needs to be controlled at 1 torr to 10 torr.

[0084] As an example, the cooling gas type can be selected from Ar or He. The cooling gas must be an inert gas. The cooling gas will enter the cavity, so it must have no effect on the coating process of the cavity and must not react after ionization. He gas has high specific heat capacity and thermal conductivity, and can achieve better cooling effect. Although Ar gas has lower thermal conductivity than He, it is cheaper, and the gas used for sputtering the target during TGV coating is Ar, which can reduce the number of gas distribution pipelines and further reduce costs.

[0085] Furthermore, through the above-mentioned structural design, under the premise of ensuring the cooling effect on the substrate 200, compared with the traditional technology, the air outlet 310 can be appropriately reduced and the first air channel 330 can be increased, so as to reduce the gas usage, that is, save costs, and increase the uniform cooling effect on the substrate 200. The gas can be evenly distributed to various positions of the substrate 200, and the cooling effect is better and more uniform, thereby ensuring the uniformity of the temperature of the substrate 200 during the TGV coating process, thereby avoiding the influence of uneven temperature on the uniformity of the film quality.

[0086] It should be noted that other embodiments of the present application also include a method for preparing a seed layer and a carrier that can be implemented by combining the technical features in the above embodiments.

[0087] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0088] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the scope of patent protection of the present application shall be subject to the attached claims.

Claims

1. A method for preparing a seed layer, characterized in that: Includes steps: Providing a substrate stage (300) having a cooling air pipeline; A tray (400) having an opening (410) is arranged on the substrate stage (300), so that the opening (410) is in fluid communication with the air outlet (310) of the cold air pipeline, and the opening (410) avoids the through hole (210) of the substrate (200) to be processed; the substrate (200) has a process effective area and a process invalid area, and the opening (410) is located below the process invalid area; the tray (400) also has a second air channel (420) in fluid communication with the opening (410), the second air channel (420) is located below the process effective area, and the second air channel (420) avoids the through hole (210) of the substrate (200); Placing the substrate (200) having the through hole (210) on the tray (400); Inputting cooling gas into the cold air pipeline so that the cooling gas contacts the substrate (200) through the tray (400); A thin film layer is formed on the substrate (200).

2. The method for preparing the seed layer according to claim 1, characterized in that: The substrate (200) is a glass substrate, and the through hole (210) is a TGV through hole.

3. The method for preparing the seed layer according to claim 1, characterized in that: The substrate (200) is a silicon substrate, and the through hole (210) is a TSV through hole.

4. The method for preparing the seed layer according to claim 3, characterized in that: Inputting cooling gas into the cold air pipeline includes: using inert gas as the cooling gas, the gas pressure in the substrate stage (300) and the tray (400) is 1 torr to 10 torr, and the gas flow rate is 2 sccm to 20 sccm.

5. The method for preparing a seed layer according to claim 1, characterized in that: Inputting cooling gas into the cooling gas pipeline includes: inputting pre-cooled cooling gas; Furthermore, the cold air pipeline comprises an air inlet (340), a first air passage (330), and an air outlet (310) which are fluidically connected; a passage area of ​​the air inlet (340) is greater than a passage area of ​​the air outlet (310); a passage area of ​​the air outlet (310) is greater than or equal to a passage area of ​​the opening (410); the air outlet (310) and the opening (410) are arranged in a one-to-one correspondence, or the number of the air outlet (310) is less than the number of the opening (410); The tray (400) is provided with a third air channel corresponding to the first air channel (330), and the third air channel is fluidically connected to the opening (410) and the second air channel (420), and the shape of the third air channel is mirrored to the first air channel (330), so that when the tray (400) is set on the substrate table (300), the parts of the first air channel (330) and the parts of the third air channel are stacked, so that the cooling gas directly enters the third air channel through the first air channel (330), and then enters the opening (410) through the third air channel.

6. The method for preparing a seed layer according to claim 1, characterized in that: The passage area of ​​the air outlet hole (310) is greater than or equal to the passage area of ​​the opening hole (410).

7. The method for preparing a seed layer according to claim 1, characterized in that: The air outlet holes (310) and the opening holes (410) are arranged in a one-to-one correspondence, or the number of the air outlet holes (310) is less than the number of the opening holes (410).

8. The method for preparing a seed layer according to any one of claims 1 to 7, characterized in that: Forming a thin film layer on the substrate (200), comprising: forming a first film layer (600) on the substrate (200); A second film layer (700) is formed on the first film layer (600).

9. The method for preparing a seed layer according to claim 8, characterized in that: The first film layer (600) is a Cu film layer, and the second film layer (700) is a Ti film layer.

10. A seed layer preparation stage, characterized in that: It comprises a substrate stage (300) and a tray (400) detachably arranged on the substrate stage (300); The substrate stage (300) has a cold air pipeline, the tray (400) has an opening (410), and the opening (410) is fluidically connected to the air outlet (310) of the cold air pipeline; The opening (410) is configured to avoid the through hole (210) of the substrate (200); The substrate (200) has a process effective area and a process ineffective area, and the opening (410) is located below the process ineffective area; the tray (400) also has a second air channel (420) in fluid communication with the opening (410), the second air channel (420) is located below the process effective area, and the second air channel (420) avoids the through hole (210) of the substrate (200).

11. The seed layer preparation stage according to claim 10, characterized in that: The cold air pipeline comprises an air inlet (340), a first air channel (330) and an air outlet (310) which are fluidically connected; The passage area of ​​the air inlet (340) is larger than the passage area of ​​the air outlet (310); The passage area of ​​the air outlet hole (310) is greater than or equal to the passage area of ​​the opening hole (410); The air outlet holes (310) and the opening holes (410) are arranged in a one-to-one correspondence, or the number of the air outlet holes (310) is less than the number of the opening holes (410); The tray (400) is provided with a third air channel corresponding to the first air channel (330), and the third air channel is fluidically connected to the opening (410) and the second air channel (420), and the shape of the third air channel is mirrored to the first air channel (330), so that when the tray (400) is set on the substrate table (300), the parts of the first air channel (330) and the parts of the third air channel are stacked, so that the cooling gas directly enters the third air channel through the first air channel (330), and then enters the opening (410) through the third air channel.

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