A device for producing multi-layer polycrystalline diamond composite sheets and a pressing and controlling method thereof

Abstract

The present invention relates to the field of mechanical automation technology, and discloses an apparatus for producing multi-layer polycrystalline diamond composite sheets and a pressing and control method thereof, wherein the apparatus comprises a heating unit, a pressure unit, a cooling unit, and a control system. The heating unit is responsible for providing a temperature field to produce the multi-layer polycrystalline diamond composite sheet; the pressure unit applies pressure during the heating process; the cooling unit is used to cool the product after synthesis; the control system connects the various parts and includes a pressing and control program, which sets working parameters according to raw material data and target parameters, and adjusts cooling part parameters according to the environment. The present invention achieves precise control of the production process by optimizing the pressing and control program, thereby improving the quality and production efficiency of the multi-layer polycrystalline diamond composite sheet.

Description

Technical Field

[0001] The present invention relates to the field of mechanical automation technology, and in particular to a device for producing a multi-layer polycrystalline diamond composite sheet and a pressing and controlling method thereof. Background Art

[0002] In modern industry, polycrystalline diamond (PCD) compacts are widely used in cutting, drilling, and grinding due to their excellent hardness, wear resistance, and thermal stability. However, traditional single-layer PCD compacts have limitations in certain applications, such as interlayer delamination under high-temperature and high-pressure conditions. To address this issue, multi-layer PCD compacts have emerged. This multi-layer structure effectively improves the overall performance of the compact, enhancing its stability and service life under extreme conditions.

[0003] However, existing multi-layer PCD composite production technology has numerous shortcomings. For example, achieving uniform distribution and tight bonding of the layers during the pressing process can be difficult, resulting in unstable final product performance. Furthermore, conventional pressing equipment has limitations in terms of control, making it impossible to precisely control pressing parameters such as pressure, temperature, and time, thus affecting product quality and consistency.

[0004] Therefore, the invention of an apparatus for producing multi-layer polycrystalline diamond composite sheets and a pressing and controlling method thereof can effectively solve the problems in the prior art and improve the production quality and consistency of multi-layer PCD composite sheets. Summary of the Invention

[0005] In view of this, the present invention proposes an apparatus for producing multi-layer polycrystalline diamond compacts and a pressing and controlling method thereof, aiming to overcome the deficiencies in the prior art and improve the production quality and consistency of multi-layer polycrystalline diamond compacts.

[0006] The present invention provides an apparatus for producing a multi-layer polycrystalline diamond compact, comprising a heating unit, a pressure unit, a cooling unit and a control system;

[0007] Wherein, the heating portion is configured to provide a temperature field for producing a multi-layer polycrystalline diamond compact;

[0008] The pressure portion is configured to apply pressure during the heating process;

[0009] The cooling unit is configured to cool the synthesis product after the synthesis process is completed;

[0010] The control system is connected to the heating part, the pressure part and the cooling part; the control system is equipped with a pressing control program, which is configured to set the initial working parameters of the heating part, the pressure part and the cooling part according to the original property data of the raw materials and the product target parameters; the pressing control program is also configured to adjust the initial working parameters of the cooling part according to the environmental parameters.

[0011] Preferably, the suppression control program is configured as follows:

[0012] a1) obtaining an initial heating temperature based on the melting point of the raw materials;

[0013] a2) obtaining an initial heating rate based on the initial heating temperature, heating power, specific heat capacity of the raw material, initial temperature of the raw material, total weight of the raw material, and target heating time;

[0014] a3) determining an initial applied pressure based on the initial compacted density, particle size, purity, and target compacted density of the raw material, combined with the thermal expansion coefficient of the raw material during heating;

[0015] a4) obtaining an initial pressure application rate based on the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure;

[0016] a5) obtaining an initial cooling rate based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time.

[0017] Preferably, the initial heating temperature is obtained according to the melting point of the raw materials using the following calculation formula:

[0018] T0=max(Tm,d,Tm,s)+ΔTm;

[0019] Where T0 represents the initial heating temperature; Tm,d represents the melting point of the diamond powder; Tm,s represents the melting point of the cemented carbide substrate; ΔTm represents the safety temperature margin; and max(Tm,d, Tm,s) represents the larger value of Tm,d and Tm,s.

[0020] Preferably, the initial heating rate is obtained using the following formula based on the initial heating temperature, heating power, specific heat capacity of the raw material, initial temperature of the raw material, total weight of the raw material, and target heating time:

[0021]

[0022]

[0023] Wherein, Rh0 represents the initial heating rate; Rh1 represents the heating rate I; Rh2 represents the heating rate II; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; th represents the target heating time; Q represents the heating power; m represents the total weight of the raw material; cp represents the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate.

[0024] Preferably, the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate is calculated as follows:

[0025]

[0026] Wherein, cp represents the weighted average specific heat capacity of diamond powder and cemented carbide substrate; mi is the mass of the i-th raw material; cp,i represents the specific heat capacity of the i-th raw material.

[0027] Preferably, the initial applied pressure is obtained using the following calculation formula based on the initial compaction density, particle size, raw material purity, and target compaction density of the raw material, combined with the thermal expansion coefficient of the raw material during heating:

[0028]

[0029] Where Pi is the initial applied pressure; Di is the initial compaction density of the raw material; Dt is the target compaction density; CF is the compaction factor determined based on particle size and purity; EV is the effective volume after thermal expansion;

[0030] The calculation formula of the compaction factor CF based on particle size and purity is:

[0031]

[0032] Wherein, Ja represents the average particle size of diamond powder; Jmax represents the maximum particle size of diamond powder; Pp represents the purity of diamond powder;

[0033] The calculation formula for the effective volume EV after thermal expansion is:

[0034]

[0035] ΔT=T0-Ti;

[0036] Where V0,i represents the initial volume of the i-th material; βi represents the volume thermal expansion coefficient of the i-th material; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; and ΔT represents the temperature change.

[0037] Preferably, the initial pressure application rate is obtained using the following calculation formula based on the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure:

[0038] ΔVd=Vd·βd·ΔT;

[0039] ΔVa=Va·βa·ΔT;

[0040]

[0041] Vt=Va+Vd;

[0042]

[0043] Wherein, Rp represents the initial pressure application rate; Kd represents the bulk modulus of diamond powder; βd represents the volume thermal expansion coefficient of diamond powder; Vd represents the initial volume of diamond powder; Ka represents the bulk modulus of cemented carbide substrate; βa represents the volume thermal expansion coefficient of cemented carbide substrate; Va represents the initial volume of cemented carbide substrate; Pd represents the additional pressure requirement of diamond powder; Pa represents the additional pressure requirement of cemented carbide substrate; ΔPd represents the pressure increment of diamond powder due to temperature change; ΔPa represents the pressure increment of cemented carbide substrate due to temperature change; Vt represents the total initial volume of diamond powder and cemented carbide substrate; Vd represents the initial volume of diamond powder; Va represents the initial volume of cemented carbide substrate; Δt represents the pressure application time; ΔVa represents the volume expansion of cemented carbide substrate; ΔVd represents the volume expansion of diamond powder; Pf represents the target applied pressure.

[0044] Preferably, the initial cooling rate is obtained using the following calculation formula based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time:

[0045]

[0046] Ht=(md·cp,d+ma·cp,a)·Tx;

[0047] Where Rc represents the initial cooling rate; Ht represents the total heat of the diamond powder and cemented carbide substrate; Hf represents the heat corresponding to the final target temperature; Δtx represents the target cooling time; md represents the mass of the diamond powder; ma represents the mass of the cemented carbide substrate; cp,d represents the specific heat capacity of the diamond powder; cp,a represents the specific heat capacity of the cemented carbide substrate; and Tx represents the temperature at the start of cooling.

[0048] Preferably, the following calculation formula is used to adjust the initial operating parameters of the cooling unit according to the environmental parameters:

[0049]

[0050] Wherein, Ra represents the adjusted cooling rate; Rc represents the initial cooling rate; Ty represents the target cooling temperature; k represents the cooling rate empirical adjustment coefficient; Tamb represents the ambient temperature during the cooling process.

[0051] The present invention also provides a pressing and controlling method for producing a multilayer polycrystalline diamond compact, comprising:

[0052] Obtain the initial heating temperature based on the melting point of the raw material;

[0053] obtaining an initial heating rate based on the initial heating temperature, the heating power, the specific heat capacity of the raw material, the initial temperature of the raw material, the total weight of the raw material, and the target heating time;

[0054] The initial applied pressure is obtained based on the initial compaction density, particle size, purity of the raw material and the target compaction density, combined with the thermal expansion coefficient of the raw material during heating;

[0055] obtaining an initial pressure application rate according to an initial heating temperature, a thermal expansion coefficient of the raw material, a bulk modulus of the raw material, an initial applied pressure, and a target applied pressure;

[0056] Obtaining an initial cooling rate based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time;

[0057] The multi-layer polycrystalline diamond compact is produced by pressing according to the initial heating temperature, initial heating rate, initial applied pressure, initial pressure application rate and initial cooling rate.

[0058] Compared with the prior art, the present invention has the following beneficial effects:

[0059] 1. Improved the accuracy of the pressing process. By comprehensively considering the physical properties of the raw materials (such as particle size, purity, thermal expansion coefficient, etc.), the initial applied pressure and pressure application rate can be set more accurately, thereby ensuring that the raw materials reach the expected compaction density during the heating process.

[0060] 2. The cooling process has been optimized. By calculating the initial cooling rate and the adjusted cooling rate, the cooling speed can be controlled more effectively, avoiding internal stress and cracks in the material caused by rapid temperature changes, thereby improving the quality of multi-layer polycrystalline diamond composite sheets.

[0061] 3. By adjusting the environmental parameters, the present invention can adapt to different production environments and ensure the stability and repeatability of the pressing process under different temperature conditions, thereby improving production efficiency and product consistency.

[0062] 4. The pressing and controlling method of the present invention is not only applicable to the production of multi-layer polycrystalline diamond composite sheets, but can also be extended to the pressing production of other composite materials, and has broad application prospects.

[0063] 5. By precisely controlling the heating and cooling processes, the present invention can reduce energy consumption, lower production costs, and at the same time reduce the impact on the environment.

[0064] In summary, the present invention provides an efficient, precise and environmentally friendly method for pressing and controlling multi-layer polycrystalline diamond composite sheets, which can significantly improve product quality and production efficiency and has important industrial application value. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present invention. The same reference symbols are used throughout the drawings to represent the same components. In the drawings:

[0066] Figure 1 Schematic diagram of the equipment for producing multi-layer polycrystalline diamond compacts according to the present invention;

[0067] Figure 2 The present invention is a flow chart of the pressing and controlling method for producing multi-layer polycrystalline diamond composite sheets. DETAILED DESCRIPTION

[0068] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, unless there is a conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0069] See Figure 1 , this embodiment provides an apparatus for producing a multilayer polycrystalline diamond compact, comprising a heating portion, a pressure portion, a cooling portion, and a control system;

[0070] Wherein, the heating portion is configured to provide a temperature field for producing a multi-layer polycrystalline diamond compact;

[0071] The pressure portion is configured to apply pressure during the heating process;

[0072] The cooling unit is configured to cool the synthesis product after the synthesis process is completed;

[0073] The control system is connected to the heating part, the pressure part and the cooling part; the control system is equipped with a pressing control program, which is configured to set the initial working parameters of the heating part, the pressure part and the cooling part according to the original property data of the raw materials and the product target parameters; the pressing control program is also configured to adjust the initial working parameters of the cooling part according to the environmental parameters.

[0074] As will be appreciated, this embodiment introduces an advanced device specifically designed for producing multi-layer polycrystalline diamond compacts. The device consists of several key components, including a heating unit, a pressure unit, a cooling unit, and a highly intelligent control system. These components work together to ensure high-quality production of multi-layer polycrystalline diamond compacts.

[0075] Specifically, the heating unit's primary function is to provide the necessary temperature field for the production of multilayer polycrystalline diamond compacts. By precisely controlling the temperature, the heating unit ensures that the raw materials achieve ideal reaction conditions during the synthesis process, thereby promoting the formation of high-quality compacts.

[0076] The pressure section applies appropriate pressure during the heating process. By applying uniform and controllable pressure, it helps the raw materials fuse better under high temperature and pressure, forming a multi-layer polycrystalline diamond compact with a dense structure and superior performance.

[0077] The cooling unit is responsible for effectively cooling the composite product after the synthesis process is completed. Through a reasonable cooling process, the cooling unit can prevent cracks or other defects in the composite sheet during the cooling process, ensuring the quality of the final product.

[0078] The control system is the core of the entire equipment, closely linked to the heating, pressing, and cooling sections, ensuring their coordinated operation. The control system includes a software module called the Press Control Program, which sets the initial operating parameters for the heating, pressing, and cooling sections based on the raw material's properties and the target product parameters. This means that before production begins, the control system's parameters are precisely set based on the raw material's characteristics and the target product's requirements.

[0079] Furthermore, the press control program dynamically adjusts the initial operating parameters of the cooling unit based on environmental parameters. This means that if environmental conditions change during production, the control system can adjust the cooling program in real time to ensure that the quality of the final product is not affected. This flexibility and adaptability is one of the key factors in ensuring the production quality of multi-layer polycrystalline diamond compacts.

[0080] In summary, the equipment provided in this embodiment achieves comprehensive control over the production process of multi-layer polycrystalline diamond compacts through its heating unit, pressure unit, cooling unit and control system, thereby ensuring high quality and consistency of the products.

[0081] In some preferred embodiments of the present application, the suppression control program is configured as follows:

[0082] a1) obtaining an initial heating temperature based on the melting point of the raw materials;

[0083] a2) obtaining an initial heating rate based on the initial heating temperature, the heating power, the specific heat capacity of the raw material, the initial temperature of the raw material, the total weight of the raw material, and the target heating time;

[0084] a3) determining an initial applied pressure based on the initial compacted density, particle size, purity, and target compacted density of the raw material, combined with the thermal expansion coefficient of the raw material during heating;

[0085] a4) obtaining an initial pressure application rate based on the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure;

[0086] a5) obtaining an initial cooling rate based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time.

[0087] It can be understood that the suppression control program of this embodiment is designed and configured to perform the following steps:

[0088] a1) First, determine an initial heating temperature based on the melting point of the raw material. This melting point is the temperature at which the raw material changes from solid to liquid and is an important factor in selecting the initial heating temperature.

[0089] a2) Next, an initial heating rate is calculated using parameters such as the initial heating temperature, heating power, specific heat capacity of the raw material, initial temperature of the raw material, total weight of the raw material, and target heating time. This heating rate determines the rate at which the raw material temperature rises during the heating process, ensuring that the raw material is heated evenly and efficiently to the desired temperature.

[0090] a3) An initial applied pressure is then calculated based on the initial compacted density, particle size, purity, and target compacted density of the raw material, combined with the thermal expansion coefficient of the raw material during heating. This applied pressure is intended to maintain the shape and density of the raw material during heating and to prevent uneven expansion or deformation of the raw material during heating.

[0091] a4) Further, an initial pressure application rate is calculated based on the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure. This pressure application rate determines the rate of change of the applied pressure during the heating process to ensure that the raw material expands uniformly during the heating process and reaches the target compaction density.

[0092] a5) Finally, an initial cooling rate is calculated based on the initial heating temperature, target cooling temperature, thermal conductivity, density, specific heat capacity, and target cooling time. This cooling rate determines how quickly the material cools to the target temperature after heating, ensuring that cracks or other defects are not formed during the cooling process due to rapid temperature changes.

[0093] Through the above steps, the pressing control program can accurately control the temperature and pressure changes of the raw materials during the heating and cooling process, thereby ensuring the quality and performance of the final product.

[0094] In some preferred embodiments of the present application, the initial heating temperature is obtained according to the melting point of the raw material using the following calculation formula:

[0095] T0=max(Tm,d,Tm,s)+ΔTm;

[0096] Where T0 represents the initial heating temperature; Tm,d represents the melting point of the diamond powder; Tm,s represents the melting point of the cemented carbide substrate; ΔTm represents the safety temperature margin; and max(Tm,d, Tm,s) represents the larger value of Tm,d and Tm,s.

[0097] It can be understood that the present embodiment determines the initial heating temperature through a specific calculation formula. Specifically, the initial heating temperature is calculated based on the melting point of the raw material. In the formula, T0 represents the initial heating temperature, and Tm,d represents the melting point of the diamond powder. Tm,s represents the melting point of the cemented carbide substrate. ΔTm represents a safety temperature margin, which is used to ensure that the material is not damaged due to excessive temperature during the heating process. max(Tm,d, Tm,s) means taking the larger value of Tm,d and Tm,s to ensure that the initial heating temperature is at least higher than the one with the higher melting point of the two raw materials.

[0098] This method ensures that both the diamond powder and the cemented carbide substrate are heated within a safe temperature range during the heating process, thus avoiding material damage caused by excessive temperatures. This calculation method is not only simple and easy to implement, but also effectively ensures the safety and reliability of the heating process.

[0099] In some preferred embodiments of the present application, the initial heating rate is obtained according to the initial heating temperature, heating power, specific heat capacity of the raw material, initial temperature of the raw material, total weight of the raw material, and target heating time using the following calculation formula:

[0100]

[0101] Wherein, Rh0 represents the initial heating rate; Rh1 represents the heating rate I; Rh2 represents the heating rate II; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; th represents the target heating time; Q represents the heating power; m represents the total weight of the raw material; cp represents the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate.

[0102] As can be appreciated, the advantage of this embodiment lies in its ability to precisely control the heating process, thereby ensuring a uniform temperature distribution across the raw materials during heating. By optimizing the initial heating rate, thermal stress concentration caused by excessive temperature gradients can be effectively avoided, thereby reducing potential cracking and deformation of the raw materials during heating. Furthermore, by accurately calculating heating power and heating time, production efficiency can be significantly improved, cycle time can be shortened, and energy consumption can be reduced.

[0103] In some preferred embodiments of the present application, the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate is calculated as follows:

[0104]

[0105] Wherein, cp represents the weighted average specific heat capacity of diamond powder and cemented carbide substrate; mi is the mass of the i-th raw material; cp,i represents the specific heat capacity of the i-th raw material.

[0106] It can be appreciated that the advantage of this embodiment is that by accurately calculating the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate, thermal management during the pressing process can be optimized. During the pressing process, temperature control is crucial to ensuring coating quality. If the temperature is too high, thermal damage to the diamond may occur, or even deformation of the cemented carbide substrate; while if the temperature is too low, the diamond powder may not be fully activated, affecting the adhesion and uniformity of the coating. Therefore, by accurately calculating the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate, an optimal thermal equilibrium state can be ensured during the pressing process. This thermal equilibrium helps maintain a constant temperature during the pressing process, thereby avoiding the aforementioned problems.

[0107] In some preferred embodiments of the present application, the initial applied pressure is obtained using the following formula based on the initial compaction density, particle size, purity of the raw material, and target compaction density, combined with the thermal expansion coefficient of the raw material during heating:

[0108]

[0109] Where Pi is the initial applied pressure; Di is the initial compaction density of the raw material; Dt is the target compaction density; CF is the compaction factor determined based on particle size and purity; EV is the effective volume after thermal expansion;

[0110] The calculation formula of the compaction factor CF based on particle size and purity is:

[0111]

[0112] Wherein, Ja represents the average particle size of diamond powder; Jmax represents the maximum particle size of diamond powder; Pp represents the purity of diamond powder;

[0113] The calculation formula for the effective volume EV after thermal expansion is:

[0114]

[0115] ΔT=T0-Ti;

[0116] Where V0,i represents the initial volume of the i-th material; βi represents the volume thermal expansion coefficient of the i-th material; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; and ΔT represents the temperature change.

[0117] As can be appreciated, the advantage of this embodiment is that it can precisely calculate the initial applied pressure, ensuring that the thermal expansion of the raw materials during the heating process is properly controlled, thereby achieving the target compaction density. This calculation method not only improves production efficiency but also reduces material waste and energy consumption.

[0118] In some preferred embodiments of the present application, the initial pressure application rate is obtained using the following calculation formula according to the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure:

[0119] ΔVd=Vd·βd·ΔT;

[0120] ΔVa=Va·βa·ΔT;

[0121]

[0122] Vt=Va+Vd;

[0123]

[0124] Wherein, Rp represents the initial pressure application rate; Kd represents the bulk modulus of diamond powder; βd represents the volume thermal expansion coefficient of diamond powder; Vd represents the initial volume of diamond powder; Ka represents the bulk modulus of cemented carbide substrate; βa represents the volume thermal expansion coefficient of cemented carbide substrate; Va represents the initial volume of cemented carbide substrate; Pd represents the additional pressure requirement of diamond powder; Pa represents the additional pressure requirement of cemented carbide substrate; ΔPd represents the pressure increment of diamond powder due to temperature change; ΔPa represents the pressure increment of cemented carbide substrate due to temperature change; Vt represents the total initial volume of diamond powder and cemented carbide substrate; Vd represents the initial volume of diamond powder; Va represents the initial volume of cemented carbide substrate; Δt represents the pressure application time; ΔVa represents the volume expansion of cemented carbide substrate; ΔVd represents the volume expansion of diamond powder; Pf represents the target applied pressure.

[0125] As can be appreciated, the advantage of this embodiment lies in its ability to accurately calculate the initial pressure application rate, ensuring that the thermal expansion and volume changes of the diamond powder and cemented carbide substrate during the synthesis process are fully accounted for. This effectively avoids material damage or synthesis failure caused by improper pressure application, thereby improving the yield and quality of synthetic diamonds.

[0126] In practice, the initial heating temperature is crucial to the entire synthesis process. Increasing temperature causes the volume of the diamond powder and carbide substrate to expand, which in turn affects the effectiveness of the applied pressure. The above formula can be used to predetermine the required initial applied pressure at different temperatures, ensuring that the applied pressure remains optimal throughout the heating process.

[0127] Furthermore, the bulk modulus and coefficient of thermal expansion of the raw material are important parameters that influence pressure application. The bulk modulus reflects the material's resistance to volume change, while the coefficient of thermal expansion describes its volumetric expansion characteristics under temperature changes. By accurately measuring and calculating these parameters, the volume change of the material during heating can be more accurately predicted, thereby optimizing the pressure application strategy.

[0128] In some preferred embodiments of the present application, the initial cooling rate is obtained using the following formula according to the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time:

[0129]

[0130] Ht=(md·cp,d+ma·cp,a)·Tx;

[0131] Where Rc represents the initial cooling rate; Ht represents the total heat of the diamond powder and cemented carbide substrate; Hf represents the heat corresponding to the final target temperature; Δtx represents the target cooling time; md represents the mass of the diamond powder; ma represents the mass of the cemented carbide substrate; cp,d represents the specific heat capacity of the diamond powder; cp,a represents the specific heat capacity of the cemented carbide substrate; and Tx represents the temperature at the start of cooling.

[0132] As can be appreciated, the advantage of this embodiment lies in its ability to precisely calculate the initial cooling rate, ensuring optimal thermal matching between the diamond powder and the cemented carbide substrate during the cooling process. This thermal matching is crucial for ensuring the bond strength between the diamond powder and the cemented carbide substrate. By optimizing the cooling rate, thermal stress can be effectively reduced, preventing cracking or flaking of the coating during the cooling process, thereby improving the overall quality and service life of the coating.

[0133] In practice, by adjusting the initial heating temperature and target cooling time, the cooling rate can be flexibly controlled to suit the specific needs of different diamond powders. For example, in some cases, a faster cooling rate may be required to shorten the production cycle, while in other cases, a slower cooling rate may be required to ensure uniformity and stability of the coating.

[0134] Furthermore, this example considers the impact of the raw material's thermal conductivity and density on the cooling process. Materials with higher thermal conductivity conduct heat more quickly, thus contributing to more uniform cooling. The raw material's density, on the other hand, affects its heat capacity during cooling, which in turn influences the cooling rate calculation. By comprehensively considering these factors, the cooling process can be more precisely controlled, ensuring optimal diamond powder performance.

[0135] In summary, this embodiment, by accurately calculating the initial cooling rate, not only improves the quality and reliability of diamond powder, but also provides greater flexibility and controllability in the diamond powder production process. This makes diamond powder more widely applicable in various industrial applications, especially in areas requiring high wear resistance and hardness, such as cutting tools, drill bits, and wear-resistant parts.

[0136] In some preferred embodiments of the present application, the initial operating parameters of the cooling unit are adjusted according to the environmental parameters using the following calculation formula:

[0137]

[0138] Wherein, Ra represents the adjusted cooling rate; Rc represents the initial cooling rate; Ty represents the target cooling temperature; k represents the cooling rate empirical adjustment coefficient; Tamb represents the ambient temperature during the cooling process.

[0139] It is understandable that the advantage of this embodiment is that the cooling parameters can be flexibly adjusted according to the actual environmental conditions, thereby ensuring the efficiency and stability of the cooling process. By introducing the ambient temperature Tamb and the target cooling temperature Ty, the system can monitor and adapt to external changes in real time, avoiding poor cooling effects caused by environmental fluctuations. In addition, the introduction of the empirical adjustment coefficient k makes the adjustment of the cooling rate more precise and personalized, thereby meeting the needs of different application scenarios. Among them, the setting of the empirical adjustment coefficient k can be optimized based on a large amount of experimental data and historical records. In actual applications, the setting of the k value usually needs to consider factors such as the type of cooling medium, the performance of the cooling equipment, and the characteristics of the object to be cooled. For example, in a coolant cooling system, the k value may be adjusted according to the thermal conductivity and fluidity of the coolant. In an air cooling system, the k value may be related to the speed and air volume of the fan.

[0140] See Figure 2 This embodiment also provides a method for controlling and pressing a multilayer polycrystalline diamond compact, comprising:

[0141] Obtain the initial heating temperature based on the melting point of the raw material;

[0142] obtaining an initial heating rate based on the initial heating temperature, the heating power, the specific heat capacity of the raw material, the initial temperature of the raw material, the total weight of the raw material, and the target heating time;

[0143] The initial applied pressure is obtained based on the initial compaction density, particle size, purity of the raw material and the target compaction density, combined with the thermal expansion coefficient of the raw material during heating;

[0144] obtaining an initial pressure application rate according to an initial heating temperature, a thermal expansion coefficient of the raw material, a bulk modulus of the raw material, an initial applied pressure, and a target applied pressure;

[0145] Obtaining an initial cooling rate based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time;

[0146] The multi-layer polycrystalline diamond compact is produced by pressing according to the initial heating temperature, initial heating rate, initial applied pressure, initial pressure application rate and initial cooling rate.

[0147] As can be appreciated, the advantage of this embodiment lies in its ability to precisely control key parameters during the production process, thereby ensuring the quality and performance of the multilayer polycrystalline diamond compact. By optimizing the initial heating temperature, overheating or uneven heating of the raw material during heating can be avoided, thereby ensuring the uniformity of the raw material. Calculating the initial heating rate ensures a smooth heating process and avoids stress concentration within the raw material caused by rapid temperature changes.

[0148] The initial applied pressure takes into account the raw material's initial compaction density, particle size, purity, and target compaction density. This helps achieve uniform distribution and tight bonding of the raw materials during the pressing process. Furthermore, the thermal expansion coefficient of the raw materials during heating is taken into account to effectively prevent internal stress caused by temperature fluctuations and ensure stability during the pressing process.

[0149] Calculation of the initial pressure application rate ensures uniform pressure transfer during the pressing process, avoiding cracks or defects caused by rapid pressure changes. The initial cooling rate, which takes into account the thermal conductivity, density, and specific heat capacity of the raw materials, as well as the target cooling time, helps control temperature gradients during the cooling process and prevent thermal stress and cracks caused by excessive cooling.

[0150] In summary, this embodiment achieves fine regulation of the pressing process of the multi-layer polycrystalline diamond compact by precisely controlling key parameters in the production process, thereby improving the quality and performance of the product.

[0151] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may take the form of a complete hardware embodiment, a complete software embodiment, or a combination of software and hardware embodiments. Furthermore, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0152] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0153] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0154] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0155] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the scope of protection of the claims of the present invention.

Claims

1. An apparatus for producing multi-layer polycrystalline diamond compacts, characterized in that: It includes heating part, pressure part, cooling part and control system; The heating portion is configured to provide a temperature field for producing a multi-layer polycrystalline diamond compact; The pressure portion is configured to apply pressure during the heating process; The cooling unit is configured to cool the synthesis product after the synthesis process is completed; The control system is connected to the heating part, the pressure part and the cooling part; the control system is configured with a pressing control program, and the pressing control program is configured as follows: a1) Use the following formula to calculate the initial heating temperature based on the melting point of the raw materials: T0=max(Tm,d,Tm,s)+ΔTm; Wherein, T0 represents the initial heating temperature; Tm,d represents the melting point of diamond powder; Tm,s represents the melting point of cemented carbide substrate; ΔTm represents the safety temperature margin; max(Tm,d, Tm,s) represents the larger value of Tm,d and Tm,s; a2) Calculate the initial heating rate using the following formula based on the initial heating temperature, heating power, specific heat capacity of the raw material, initial temperature of the raw material, total weight of the raw material, and target heating time: ； ； ； Wherein, Rh0 represents the initial heating rate; Rh1 represents the heating rate I; Rh2 represents the heating rate II; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; th represents the target heating time; Q represents the heating power; m represents the total weight of the raw material; cp represents the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate; The calculation formula of the weighted average specific heat capacity of diamond powder and cemented carbide substrate is: ； Where, cp represents the weighted average specific heat capacity of diamond powder and cemented carbide substrate; mi is the mass of the i-th raw material; cp,i represents the specific heat capacity of the i-th raw material; a3) Calculate the initial applied pressure using the following formula based on the initial compacted density, particle size, purity, and target compacted density of the raw material, combined with the thermal expansion coefficient of the raw material during heating: ； Where Pi is the initial applied pressure; Di is the initial compaction density of the raw material; Dt is the target compaction density; CF is the compaction factor determined based on particle size and purity; EV is the effective volume after thermal expansion; The calculation formula of the compaction factor CF based on particle size and purity is: ； Wherein, Ja represents the average particle size of diamond powder; Jmax represents the maximum particle size of diamond powder; Pp represents the purity of diamond powder; The calculation formula for the effective volume EV after thermal expansion is: ； ΔT=T0-Ti; Wherein, V0,i represents the initial volume of the i-th material; βi represents the volume thermal expansion coefficient of the i-th material; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; ΔT represents the temperature change; a4) Calculate the initial pressure application rate using the following formula based on the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure: ； ； Vt=Va+Vd; ； Wherein, Rp represents the initial pressure application rate; Kd represents the bulk modulus of diamond powder; βd represents the volume thermal expansion coefficient of diamond powder; Vd represents the initial volume of diamond powder; Ka represents the bulk modulus of cemented carbide substrate; βa represents the volume thermal expansion coefficient of cemented carbide substrate; Va represents the initial volume of cemented carbide substrate; ΔPd represents the pressure increment of diamond powder due to temperature change; ΔPa represents the pressure increment of cemented carbide substrate due to temperature change; Vt represents the total initial volume of diamond powder and cemented carbide substrate; Δt represents the pressure application time; Pf represents the target applied pressure, and Pi represents the initial applied pressure. a5) obtaining an initial cooling rate based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time.

2. The apparatus for producing a multilayer polycrystalline diamond compact according to claim 1, wherein: The initial cooling rate is calculated using the following formula based on the initial heating temperature, target cooling temperature, thermal conductivity of the raw material, density of the raw material, specific heat capacity of the raw material, and target cooling time: ； ； Where Rc represents the initial cooling rate; Ht represents the total heat of the diamond powder and cemented carbide substrate; Hf represents the heat corresponding to the final target temperature; Δtx represents the target cooling time; md represents the mass of the diamond powder; ma represents the mass of the cemented carbide substrate; cp,d represents the specific heat capacity of the diamond powder; cp,a represents the specific heat capacity of the cemented carbide substrate; and Tx represents the temperature at the start of cooling.

3. The apparatus for producing a multi-layer polycrystalline diamond compact according to claim 2, wherein: The following calculation formula is used to adjust the initial operating parameters of the cooling unit according to the environmental parameters: ； Where Ra represents the adjusted cooling rate; Rc represents the initial cooling rate; Ty represents the target cooling temperature; u represents the cooling rate empirical adjustment coefficient; and Tamb represents the ambient temperature during the cooling process.

4. A method for producing a multilayer polycrystalline diamond compact, characterized in that: Applied to the apparatus for producing a multilayer polycrystalline diamond compact according to any one of claims 1 to 3, the pressing and regulating method comprises: a1) Use the following formula to calculate the initial heating temperature based on the melting point of the raw materials: T0=max(Tm,d,Tm,s)+ΔTm; Wherein, T0 represents the initial heating temperature; Tm,d represents the melting point of diamond powder; Tm,s represents the melting point of cemented carbide substrate; ΔTm represents the safety temperature margin; max(Tm,d, Tm,s) represents the larger value of Tm,d and Tm,s; a2) Calculate the initial heating rate using the following formula based on the initial heating temperature, heating power, specific heat capacity of the raw material, initial temperature of the raw material, total weight of the raw material, and target heating time: ； ； ； Wherein, Rh0 represents the initial heating rate; Rh1 represents the heating rate I; Rh2 represents the heating rate II; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; th represents the target heating time; Q represents the heating power; m represents the total weight of the raw material; cp represents the weighted average specific heat capacity of the diamond powder and the cemented carbide substrate; The calculation formula of the weighted average specific heat capacity of diamond powder and cemented carbide substrate is: ； Where, cp represents the weighted average specific heat capacity of diamond powder and cemented carbide substrate; mi is the mass of the i-th raw material; cp,i represents the specific heat capacity of the i-th raw material; a3) Calculate the initial applied pressure using the following formula based on the initial compacted density, particle size, purity, and target compacted density of the raw material, combined with the thermal expansion coefficient of the raw material during heating: ； Where Pi is the initial applied pressure; Di is the initial compaction density of the raw material; Dt is the target compaction density; CF is the compaction factor determined based on particle size and purity; EV is the effective volume after thermal expansion; The calculation formula of the compaction factor CF based on particle size and purity is: ； Wherein, Ja represents the average particle size of diamond powder; Jmax represents the maximum particle size of diamond powder; Pp represents the purity of diamond powder; The calculation formula for the effective volume EV after thermal expansion is: ； ΔT=T0-Ti; Wherein, V0,i represents the initial volume of the i-th material; βi represents the volume thermal expansion coefficient of the i-th material; T0 represents the initial heating temperature; Ti represents the initial temperature of the raw material; ΔT represents the temperature change; a4) Calculate the initial pressure application rate using the following formula based on the initial heating temperature, the thermal expansion coefficient of the raw material, the bulk modulus of the raw material, the initial applied pressure, and the target applied pressure: ； ； Vt=Va+Vd; ； Wherein, Rp represents the initial pressure application rate; Kd represents the bulk modulus of diamond powder; βd represents the volume thermal expansion coefficient of diamond powder; Vd represents the initial volume of diamond powder; Ka represents the bulk modulus of cemented carbide substrate; βa represents the volume thermal expansion coefficient of cemented carbide substrate; Va represents the initial volume of cemented carbide substrate; ΔPd represents the pressure increment of diamond powder due to temperature change; ΔPa represents the pressure increment of cemented carbide substrate due to temperature change; Vt represents the total initial volume of diamond powder and cemented carbide substrate; Δt represents the pressure application time; Pf represents the target applied pressure, and Pi represents the initial applied pressure. a5) obtaining an initial cooling rate based on the initial heating temperature, the target cooling temperature, the thermal conductivity of the raw material, the density of the raw material, the specific heat capacity of the raw material, and the target cooling time.

Images