Semiconductor switching device with pressure system and method for assembling the same

Abstract

The present disclosure relates to a semiconductor switching device with a pressure system. A semiconductor switching device (1) comprises a gate ring (5) and a gate connector element (6) for contacting the gate ring (5) and comprises a pressure system (7) for pressing the gate connector element (6) onto the gate ring (5), the pressure system (7) comprising an insulation ring (11) and a plurality of elastic beams (12) arranged circumferentially on the insulation ring (11), wherein the insulation ring (11) comprises a plurality of support portions (16, 17) for supporting end portions (14, 15) of the elastic beams (12).

Description

Technical Field

[0001] This disclosure relates to a semiconductor switching device and a method for assembling the semiconductor switching device. The device may be a gate-commutated thyristor (GCT), and in particular an integrated gate-commutated thyristor (IGCT). Background Technology

[0002] The increased maximum controllable turn-off current rating required by IGCTs has led to an increase in the size of the IGCT wafer from approximately 100 mm in diameter to 150 mm. This, in turn, results in a larger housing, leading to greater complexity and cost. Furthermore, simplified installation of the large-area device must be achieved. Additionally, all parts within the housing must be properly aligned and supported during transportation to ensure proper contact after shipment.

[0003] Document US 9,698,067 B2 discloses a spacer system for a semiconductor switching device, the spacer system being formed by spacer rings and a plurality of insulating elements. Document US 10,892,245 B2 discloses a switching device including a semiconductor element and a housing, the housing including a spring system with an annular washer laterally surrounding the semiconductor element for clamping the semiconductor element between two electrodes. Summary of the Invention

[0004] Embodiments of this disclosure relate to an improved semiconductor switching device.

[0005] According to a first aspect of this disclosure, a semiconductor switching device includes a gate ring and a gate connector element for contacting the gate ring, and includes a pressure system for pressing the gate connector element onto the gate ring. The pressure system includes an insulating ring and a plurality of resilient beams circumferentially arranged on the insulating ring, wherein the insulating ring includes a plurality of supports for supporting ends of the resilient beams.

[0006] As an example, a semiconductor switching device can be a gate-commutated thyristor (GCT) or a gate-turn-off thyristor (GTO). A semiconductor switching device can also be an integrated gate-commutated thyristor (IGCT).

[0007] Semiconductor switching devices are often shipped to customers as single units, and multiple devices can be stacked by the customer. In the stack, each device is clamped. In the clamped state, a pressure system presses the gate connector element onto the gate ring.

[0008] The gate connector element may include multiple fingers. Each finger may rest on one of the resilient beams. The fingers may rest on the central section of the resilient beam. The fingers may be partially bent around the resilient beam.

[0009] To prevent the elastic beam from moving in the circumferential direction, walls can be present between adjacent supports. This allows the elastic beam to remain aligned with the fingers of the gate connector element.

[0010] The elastic beam may include a thickened portion in its central section. Accordingly, the central section of the elastic beam may be thicker than the ends of the elastic beam. The thickened portion may protrude axially beyond the support portion. This allows for an increase in the gap between the gate ring and the support portion. Furthermore, it ensures the gap between the cathode electrode and the semiconductor substrate during the non-clamped state of the device.

[0011] The insulating ring may include a plurality of pins on a second side of the insulating ring opposite to the first side on which the elastic beam is arranged, wherein the plurality of pins are configured to provide rotational locking of the insulating ring and / or other parts of the semiconductor switching device. As an example, rotational locking of a gate connector element may be implemented.

[0012] The switching device may include a spacer ring for insulating the gate connector element from the cathode electrode. A pressure system may provide rotational locking of the spacer ring. The spacer ring may include a plurality of support elements for supporting the gate connector element and a plurality of slots between the support elements, wherein pins engage in the slots. Accordingly, rotational locking can be achieved by simply inserting pins into the slots.

[0013] Each support element may include a first portion and a second portion. The gate connector element may rest on the first portion and be prevented from rotating in one rotational direction by the second portion. The first and second portions may be provided as steps.

[0014] The pressure system can be configured to be supplied as a single unit for the assembly of semiconductor switching devices. Accordingly, the elastic beam is securely fixed to the insulating ring by the support of the pressure system. This allows for quick and easy assembly and disassembly of the device.

[0015] According to another aspect of this disclosure, a method for assembling a semiconductor switching device includes the steps of: providing a housing assembly of the semiconductor switching device, and providing a pressure system for pressing a gate connector element onto a gate ring of the switching device. The housing assembly may include a housing, a gate connector element, and a cathode electrode. The pressure system includes an insulating ring and a plurality of resilient beams circumferentially arranged on the insulating ring, wherein the insulating ring includes a plurality of supports for supporting the ends of the resilient beams. In this method, the pressure system is assembled with the housing assembly, wherein the pressure system is provided as a single piece.

[0016] The semiconductor switching device assembled in this method can have any of the structural and functional characteristics of the aforementioned device.

[0017] By providing a pressure system in single-piece form, assembly can be simplified. Therefore, compared to a pressure system that provides individual parts and requires separate assembly of these parts with the various components of the device, costs can be reduced and correct assembly can be easily ensured.

[0018] Before assembling the pressure system with the housing assembly, a spacer ring can be provided to insulate the gate connector element from the cathode electrode. The spacer ring includes multiple support elements, wherein the spacer ring is positioned and rotated around the cathode electrode until the gate connector element is positioned on the support elements of the spacer ring.

[0019] Specifically, the finger portion of the gate connector element can be positioned on the first support portion of the support element, and the second portion of the support element blocks further rotation of the spacer ring.

[0020] When assembling the pressure system, the pins of the pressure system can be inserted into the grooves of the spacer ring. This provides a simple and effective self-locking mechanism between the pressure system and the spacer ring.

[0021] After the pressure system is assembled, the fingers of the gate connector element can be bent to be positioned on the elastic beam.

[0022] This disclosure includes several aspects and embodiments. Each feature described with respect to one aspect and embodiment is also disclosed herein with respect to other aspects and embodiments, even if the corresponding feature is not explicitly mentioned in the context. Attached Figure Description

[0023] Further features, improvements, and conveniences will become clear from the following description of exemplary embodiments taken in conjunction with the accompanying drawings. In the drawings, elements with the same structure and / or function may be represented by the same reference numerals. It should be understood that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0024] Figure 1 A cross-sectional view showing details of the switching device according to an embodiment is shown.

[0025] Figure 2A yes Figure 1 A three-dimensional diagram of the pressure system of the switching device.

[0026] Figure 2B It shows Figure 2A Details

[0027] Figure 2C It shows Figure 2B Details

[0028] Figure 3 The image shows the clamped state. Figure 1 Switching device,

[0029] Figure 4A A perspective view of the spacer ring of the switching device according to an embodiment is shown.

[0030] Figure 4B It shows Figure 4A Magnified details

[0031] Figure 5A and Figure 5B The steps in a method for assembling a switching device according to an embodiment are illustrated in a perspective view.

[0032] Figure 6A A cross-sectional view showing details of a switching device according to another embodiment is shown.

[0033] Figure 6B It shows Figure 6A A three-dimensional diagram of the pressure system in a switching device. Detailed Implementation

[0034] Figure 1 Details of a semiconductor switching device 1 are shown. Switching device 1 can be a GCT (Gate-Commutated Thyristor), and more particularly an IGCT (Integrated Gate-Commutated Thyristor). The IGCT can be a large-area IGCT, wherein the gate structure on the GCT wafer is placed on the periphery of the wafer.

[0035] The switching device 1 includes a semiconductor substrate 2, a cathode electrode 3, an anode electrode 4, and a gate ring 5. The cathode electrode 3 includes a cathode strain buffer plate 19, and the anode electrode 4 includes an anode strain buffer plate 20. The strain buffer plates 19 and 20 are made of a conductive material with a coefficient of thermal expansion that is between that of the semiconductor substrate 2 and the respective electrodes 3 and 4. The gate ring 5 is electrically connected by a gate connector element 6.

[0036] The pressure system 7 is used to apply the required pressure to the gate connector element 6. The gate connector element 6 transmits force to the gate ring 5 to ensure proper switching capability of the semiconductor substrate 2.

[0037] In addition, the pressure system 7 is used to lock the component in place (e.g., during transport or during vibration testing). The pressure system 7 locks the spacer ring 8 and prevents it from rotating. The spacer ring 8 electrically insulates the gate connector element 6 from the cathode electrode 3.

[0038] The switching device 1 includes a housing 9, which includes a creepage section on its outer side. The housing 9 is connected to the anode plate 4 via an anode flange 10.

[0039] During transport and vibration testing, the switch device 1 is typically supplied as a single unit. In operation, a stack of switch devices 1 can be formed in a clamped state for electrical interconnection. Within the stack, the anode plate 4 is pressed against the semiconductor substrate 2.

[0040] Figure 2A Pressure system 7 is shown, and the pressure system is Figure 1 A portion of the switching device 1 may be assembled together with the housing assembly during the formation of the switching device 1 (see Figure 5A ). Figure 2B It shows Figure 2A Magnified details Figure 2C It shows Figure 2B Zoomed-in details.

[0041] The pressure system 7 includes an insulating ring 11 made of an insulating material. For example, the insulating ring 11 may include a plastic material.

[0042] The pressure system 7 further includes a plurality of elastic beams 12. The pressure system 7 may consist of an insulating ring 11 and a plurality of elastic beams 12. The elastic beams 12 are configured to deflect and subsequently return to their original shape. The elastic beams 12 may comprise an elastic material (e.g., spring steel). Since a plurality of elastic beams 12 replace a single spring extending circumferentially along the insulating ring 11, the pressure system 7 may be referred to as a “segmented” pressure system 7.

[0043] A flexible beam 12 is mounted on a first side 13 of the insulating ring 11. The first side 13 can be referred to as the top side. The flexible beam 12 is arranged circumferentially along the first side 13 and forms a closed ring. Each flexible beam 12 is fixed at each of its ends 14, 15 to one of a plurality of supports 16, 17. The supports 16, 17 may be integral parts of the insulating ring 11. The flexible beam 12 may be held in the supports 16, 17. The supports 16, 17 have a flexible self-locking design, so that the flexible beam 12 is securely fixed to the ring 2. As an example, the flexible beam 12 may snap into the supports 16, 17.

[0044] The wall 18 between adjacent supports 16 and 17 positions the resilient beam 12 in the correct circumferential position. This ensures that the resilient beam 12 is centered relative to the gate connector element 6, ensuring proper pressure distribution.

[0045] Due to the segmented design of the insulating ring 11, the pressure on the grid ring 5 can be easily adjusted by changing the length, diameter, or total number of elastic beams 12. Furthermore, the segmented design allows for a reduction in the overall height of the pressure system 7, while also allowing for a reduction in the overall height of the housing 9 of the switching device 1. This allows for a lower overall height, particularly when designed for lower voltage levels.

[0046] The pressure system 7 includes a pin 21 at a second side 22 of the insulating ring 11. The second side 22 is the side opposite to the first side 13 and may be the bottom side of the insulating ring 11. The pin 21 is used to hold another part of the switching device 1 in place, which will combine... Figure 5A and Figure 5B A detailed explanation follows. Pin 21 can be an integral part of insulating ring 11.

[0047] Figure 3 The image shows the clamped state. Figure 1 Switching device 1. With Figure 1 The non-clamped state shown is distinguished by the fact that the anode electrode 4 is pressed against the semiconductor substrate 2. The gap between the cathode strain buffer plate 19 and the semiconductor substrate 2 is removed.

[0048] In addition, the elastic beam 12 deflects downward in its central section and is therefore subjected to strain. Accordingly, the elastic beam 12 applies an elastic force to the gate connector element 6 in a manner toward the gate ring 5. In such a manner... Figure 1 In the unclamped state shown, the elastic beam 12 is relaxed. It is also possible that the elastic beam 12 has deflected slightly and therefore experienced strain in the unclamped state. Furthermore, it is possible that, in the unclamped state of the device, the pressure system has slightly pressed the gate connector element against the gate ring.

[0049] Figure 4A A three-dimensional view of spacer ring 8 is shown. Figure 4B Details of the spacer ring are shown. The spacer ring 8 includes an annular wall 30 and a plurality of support elements 23 arranged circumferentially on the bottom side of the wall 30.

[0050] Each support element 23 includes a first portion 24 and a second portion 25, wherein the height of the first portion 24 is less than the height of the second portion 25. The first portion 24 is used to support the gate connector element 6, and in particular the finger portion 27 of the gate connector element 6 (see also). Figure 5A ).

[0051] The second part 25 is configured as a stop for the finger portion 27 when forming the assembled switch device 1 (see also...). Figure 5A The second part 25 can be additionally formed as a support for the pressure system 7.

[0052] Slot 26 is configured to receive pin 21 of pressure system 7 (see...) Figure 5B ).

[0053] Figure 5A and Figure 5B The steps in a method for assembling the switching device 1 are shown. The switching device 1 and its components can be described in conjunction with the foregoing figures.

[0054] exist Figure 5AThe present invention provides a housing assembly 31 for a switching device 1, the housing assembly including a housing 9, a cathode electrode 3, and a gate connector element 6. The gate connector element 6 is fixed to the housing 9, and, as an example, is soldered between two portions of the housing 9. The housing assembly 31 also includes another gate connector element 32 fixed to the housing 9 and fixed to the cathode electrode 3 (see [reference needed]). Figure 3 ).

[0055] The spacer ring 8 is inserted into the housing assembly 31 from the top. The slot 26 is initially aligned with the fingers 27 of the gate connector element 6. Once the spacer ring 8 is on the cathode electrode 3, it is rotated until the fingers 27 are on the first portion 24 of the support element 23. This rotation stops when the fingers 27 abut against the left side of the second portion 25. The rotation is clockwise when viewed from the top to the bottom of the housing 9. Figure 5A The finger portion 27 is shown in its final position after rotation.

[0056] Figure 5B The subsequent steps are shown, in which the pressure system 7 is inserted into the housing 9 from the top side, such that the pin 21 is fitted into the slot 26. The pressure system 7 is inserted as a single pre-assembled component. The pressure system 7 may then be located on the second portion 25 of the support element 23 and / or directly on the cathode electrode 3.

[0057] In this position, the pressure system 7 prevents the finger portion 27 from moving counterclockwise backward. The spacer ring 8, the pressure system 7, and the finger portion 27 are locked together and prevented from rotating. Accordingly, a self-locking design is provided for the pressure system 7, the gate connector element 6, and the spacer ring 8.

[0058] Furthermore, since the pin 21 is properly fitted into the slot 26, the elastic beam 12 is also properly aligned with the finger 27. In a subsequent step, the finger 27 is bent onto the elastic beam 12. The finger 27 is aligned with the central section of the beam 12 so that the pressure on the grid ring 5 can be evenly distributed.

[0059] Subsequently, the gate ring 5, the semiconductor substrate 2, and the anode plate 4 are inserted into the housing 9 from the top side, and the anode flange 10 is fixed to the anode plate 4.

[0060] The rotational locking by inserting the pin 21 into the slot 26 is simple and requires no special tools. Accordingly, this assembly is simpler and faster than the prior art method of bending the finger 27 to a specific position on the spacer ring to prevent the spacer ring from rotating.

[0061] Figure 6A and Figure 6BAnother embodiment of the semiconductor switching device 1 with pressure system 7 is shown. The only difference from the previous embodiment is that the elastic beam 12 has a thickened portion 28 in the central section. The thickened portion 28 may be integral with the rest of the elastic beam 12. Alternatively, the thickened portion 28 may be an additional element surrounding the rest of the elastic beam 12.

[0062] Due to the thickened portion 28, the elastic beam 12 protrudes beyond the support portions 16 and 17 in the axial direction.

[0063] Therefore, the gap 29 between the cathode electrode 3 and the semiconductor substrate 2 can be widened. Furthermore, it ensures that the proper distance between the supports 16, 17 and the gate ring 5 is maintained. The thickened portion 28 also allows the elastic beam 12 to bend more when the gate ring 5 is not located on the supports 16, 17.

[0064] Overall, the segmented pressure system 7 makes the assembly of the switching device 1 easier, faster, and more error-proof (poka-yoke) because the pressure system 7 can be inserted into the housing 9 as a pre-assembled part. This is an advantage over the prior art, in which several disc springs and spring washers must be inserted into the housing 9 one by one during the assembly of the GCT element, and each element must be correctly oriented.

[0065] In addition, the segmented pressure system 7 can be made more compact in terms of overall height. As a result, the housing 9 can also have a smaller height and save costs, provided that the height is sufficient for the desired voltage level.

[0066] The spring characteristics of the pressure system 7 can be finely adjusted by adjusting the number, diameter, or length of the elastic beams 12 to achieve the required pressure applied to the grid ring 5.

[0067] Due to the simple design of the elastic beam 12 (essentially a beam supported at both ends), the spring characteristics can be easily calculated based on fundamental principles of mechanics during the first iteration. Suitable elastic beams 12 are available in a variety of materials and sizes on the market and are less expensive than the disc springs and spring washers in existing pressure systems. Because of the simplicity of the design, the pressure system 7 can be easily tested before implementation in production (e.g., in 3D printing). Furthermore, when the pressure system 7 comprises only two stacked parts (i.e., the insulating ring 11 and the elastic beam 12), the accuracy requirements for total thickness and clearance are lower than in existing solutions with more parts (i.e., a stack of two washers and two disc springs).

[0068] Figure Labels

[0069] 1 Semiconductor Switching Device

[0070] 2 Semiconductor substrates

[0071] 3 Cathode Plates

[0072] 4 Anode plates

[0073] 5 grid rings

[0074] 6-gate connector element

[0075] 7 Pressure System

[0076] 8 spacer rings

[0077] 9 shells

[0078] 10 Anode Flange

[0079] 11 Insulating Rings

[0080] 12 elastic beams

[0081] 13 First side

[0082] 14 end

[0083] 15 end

[0084] 16 Support sections

[0085] 17 Support Section

[0086] The wall between 18 support parts

[0087] 19 Cathode Strain Buffer Plate

[0088] 20 Anode Strain Buffer Plate

[0089] 21 sales

[0090] 22 Second side

[0091] 23 Supporting elements

[0092] 24 Part 1

[0093] 25 Part Two

[0094] 26 slots

[0095] 27 finger-like parts

[0096] 28 Thickened section

[0097] 29 gaps

[0098] 30 spacer ring wall

[0099] 31 Housing Assembly

[0100] 32 Another gate connector element

Claims

1. A semiconductor switching device (1), the semiconductor switching device comprising a gate ring (5) and a gate connector element (6) for contacting the gate ring (5), and comprising a pressure system (7) for pressing the gate connector element (6) onto the gate ring (5), characterized in that, The pressure system (7) includes an insulating ring (11) and a plurality of elastic beams (12) arranged circumferentially on the insulating ring (11), wherein the insulating ring (11) includes a plurality of supports (16, 17) for supporting the ends (14, 15) of the elastic beams (12).

2. The semiconductor switching device (1) as described in claim 1. in, The gate connector element (6) includes a plurality of fingers (27), wherein each finger (27) rests on one of the elastic beams (12).

3. The semiconductor switching device (1) as claimed in claim 1 or 2, comprising a wall (18) between adjacent supports in the supports (16, 17), the wall being used to prevent the elastic beam (12) from moving in the circumferential direction.

4. The semiconductor switching device (1) as claimed in claim 1 or 2, wherein, The elastic beam (12) includes a thickened portion (28) in the central section.

5. The semiconductor switching device (1) as claimed in claim 1 or 2, wherein, The insulating ring (11) includes a plurality of pins (21) on a second side (22) opposite to the first side (13) on which the elastic beam (12) is arranged, wherein the plurality of pins (21) are configured to provide rotational locking of the pressure system (7) and / or other parts of the semiconductor switching device (1).

6. The semiconductor switching device (1) as claimed in claim 5, comprising a spacer ring (8) for insulating the gate connector element (6) from the cathode electrode (3), wherein, The pressure system (7) provides rotational locking of the spacer ring (8).

7. The semiconductor switching device (1) as claimed in claim 6, wherein, The spacer ring (8) includes a plurality of support elements (23) for supporting the gate connector element (6) and a plurality of slots (26) between the support elements (23), wherein the pin (21) engages in the slots (26).

8. The semiconductor switching device (1) as described in claim 7. in, Each support element (23) includes a first part (24) and a second part (25), wherein the gate connector element (6) rests on the first part (24) and is prevented from rotating in a rotational direction by the second part (25).

9. The semiconductor switching device (1) as claimed in claim 1 or 2, wherein, The pressure system (7) is configured to be provided as a single piece for the assembly of the semiconductor switching device (1).

10. The semiconductor switching device (1) as claimed in claim 1 or 2, wherein the semiconductor switching device (1) is selected from a gate-commutated thyristor, an integrated gate-commutated thyristor, and a gate-turn-off thyristor.

11. A method for assembling a semiconductor switching device (1) including a gate ring (5), the method comprising the steps of: A) Provide a housing assembly (31) for the semiconductor switching device (1), the housing assembly including a housing (9), a gate connector element (6) and a cathode electrode (3). A pressure system (7) is provided for pressing the gate connector element (6) onto the gate ring (5). The pressure system (7) is characterized in that it includes an insulating ring (11) and a plurality of elastic beams (12) arranged circumferentially on the insulating ring (11), wherein the insulating ring (11) includes a plurality of supports (16, 17) for supporting the ends (14, 15) of the elastic beams (12). B) Assemble the pressure system (7) together with the housing assembly (31), wherein the pressure system (7) is provided as a single piece.

12. The method as described in claim 11, in, Prior to step B), a spacer ring (8) is provided for insulating the gate connector element (6) from the cathode electrode (3). The spacer ring (8) includes a plurality of support elements (23), wherein the spacer ring (8) is placed around the cathode electrode (3) and rotated until the gate connector element (6) is positioned on the support elements (23) of the spacer ring (8).

13. The method as described in claim 12, in, The gate connector element (6) includes a plurality of fingers (27), and the support element (23) includes a first portion (24) and a second portion (25), wherein the spacer ring (8) is rotated until the fingers (27) are positioned on the first portion (24) and further rotation is blocked by the second portion (25).

14. The method as described in claim 13, in, Assembling the pressure system (7) includes inserting the pin (21) of the pressure system (7) into the groove (26) of the spacer ring (8).

15. The method as described in any one of claims 11 to 14, in, The gate connector element (6) includes a plurality of fingers (27) which are bent to be positioned on the elastic beam (12).

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