Components that enable 3D sensing in a single Hall zone

Abstract

The present invention provides a component for realizing 3D sensing in a single Hall region, and relates to the technical field of Hall effect sensors. The component for realizing 3D sensing in a single Hall region includes a substrate, a buffer layer, a functional layer, a sensing layer, a magnetic core and a plurality of electrodes, wherein the buffer layer, the functional layer and the sensing layer are formed in sequence; two groups of electrodes are arranged on the sensing layer, and each group includes at least 4 electrodes distributed along the same circumference, and the two groups of electrodes are arranged staggered in the circumferential direction and are centrally symmetrical; the magnetic core is arranged on the sensing layer; the cross section of the magnetic core is a symmetrical structure, and the projection center overlaps with the distribution center of the plurality of electrodes. Compared with the prior art, the present invention has a compact structure, can effectively save space, is compatible with conventional planar processes, reduces production difficulty and cost, and has high symmetry in design, good sensing performance, high directional uniformity, extremely convenient and simple calibration, and the output voltage has high linearity in three directions.

Description

Technical Field

[0001] The present invention relates to the technical field of Hall effect sensors, and in particular to a component for realizing 3D sensing in a single Hall region. Background Art

[0002] The invention of 3D Hall effect sensors stems from the need for more accurate and comprehensive magnetic field information. In the industrial field, multi-axis motion detection becomes particularly important, such as angle measurement of robot arms or multi-axis detection on each roller of a mobile robot. Traditional Hall effect sensors can only measure magnetic fields in a single direction, while 3D Hall effect sensors can collect complete magnetic field information in a three-dimensional environment.

[0003] At present, the mainstream 3D Hall sensor element manufacturing schemes are divided into three-dimensional Hall structure and planar Hall structure. However, its manufacturing difficulties are many and its performance is poor. First,. Secondly, the use of planar Hall elements to realize 3D magnetic field detection is mostly achieved through multiple planar Hall elements and magnetic cores, which are placed at different positions and angles. Due to the design of multiple planar structures combined with magnetic concentration, the sensing range and sensitivity of planar elements that realize 3D sensing in a single Hall area are subject to certain limitations and will be affected by the position, size and shape of the magnetic core. This structure makes the magnetic field distribution in the sensing area uneven, resulting in weaker sensing signals at certain angles, affecting the performance and stability of the component. At the same time, the sensitivity of the component is greatly affected by the assembly position of the magnetic core, which brings the problem of poor product consistency. Summary of the invention

[0004] The objects of the present invention include, for example, providing an element for realizing 3D sensing in a single Hall region, which can realize 3D magnetic field detection through a single Hall element and a single magnetic concentrating core, and has a simple structure, simple calibration, and high element volume utilization.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a component for implementing 3D sensing in a single Hall region, comprising:

[0007] substrate;

[0008] a buffer layer disposed on the substrate;

[0009] A functional layer disposed on the buffer layer;

[0010] A sensing layer formed on the functional layer and having a centrally symmetrical structure;

[0011] Two groups of electrodes are arranged on the sensing layer, the two groups of electrodes respectively include at least four electrodes distributed along the same circumference, and the two groups of electrodes are staggered in the circumferential direction and are distributed in a centrally symmetrical manner;

[0012] and a magnetic core disposed on the induction layer;

[0013] The magnetic core has a symmetrical structure, and the projection center of the magnetic core on the induction layer overlaps with the distribution center of the plurality of electrodes.

[0014] In an optional embodiment, each of the electrodes includes a first metal electrode layer, which is arranged on the sensing layer and forms an ohmic contact with the sensing layer. A passivation layer is also arranged on the sensing layer, and a passivation opening is formed by opening the passivation layer. The passivation opening corresponds to the first metal electrode layer and partially exposes the first metal electrode layer.

[0015] In an optional embodiment, each of the electrodes further includes a second metal electrode layer, wherein the second metal electrode layer covers the passivation opening and is connected to the first metal electrode layer.

[0016] In an optional embodiment, the magnetic core is in the shape of a cylinder or a sphere, and the cross section of the magnetic core is in the shape of a circle, a ring or a regular polygon.

[0017] In an optional embodiment, the passivation layer covers the sensing layer, and an edge of the passivation layer extends outward by at least 5 μm relative to an edge of the sensing layer.

[0018] In an optional embodiment, the width of the passivation opening is smaller than the width of the first metal electrode layer, and the passivation opening is spaced apart from an edge of the first metal electrode layer.

[0019] In an optional embodiment, a distance between an edge of the passivation opening and an edge of the first metal electrode layer is greater than or equal to 2 μm.

[0020] In an optional embodiment, the relative magnetic permeability of the magnetic core is greater than 100.

[0021] In an optional embodiment, the plurality of electrodes are divided into two input electrodes, two output electrodes and four first sensing electrodes, the two input electrodes and the two output electrodes are respectively arranged in a centrally symmetrical manner, and the connection line between the two input electrodes is orthogonal to the connection line between the two output electrodes.

[0022] In an optional embodiment, the four first sensing electrodes are distributed along a rectangle and arranged at the top corners of the rectangle, the two input electrodes are respectively arranged on two opposite sides of the rectangle, and the two output electrodes are respectively arranged on the remaining two opposite sides of the rectangle.

[0023] In an optional implementation, the two input electrodes and the two output electrodes are distributed along a rectangle and are respectively arranged at the four vertices of the rectangle, and the four first sensing electrodes are respectively arranged on the four sides of the rectangle.

[0024] In an optional implementation, the two input electrodes, the two output electrodes and the four first sensing electrodes are staggered and distributed on the same circumference.

[0025] In an optional implementation, a distance between any one of the two input electrodes, the two output electrodes and the four first sensing electrodes and an edge of the sensing layer is greater than or equal to 5 μm.

[0026] In an optional embodiment, the plurality of electrodes further include four second induction electrodes, the four second induction electrodes are distributed in a rectangular shape at the center of the circle, and the magnetic concentrating core is disposed on the four second induction electrodes.

[0027] In an optional embodiment, four positioning posts are further provided on the induction layer, and the four positioning posts are distributed in a rectangular shape at the center of the circle, and the magnetic core is provided on the four positioning posts.

[0028] In an optional embodiment, the magnetic core is spherical, and the distance between two adjacent positioning posts is less than 20% of the radius of the magnetic core.

[0029] In an optional embodiment, the magnetic core is in the shape of a ring cylinder, and the inner diameter of the magnetic core is less than or equal to half of the outer diameter of the magnetic core.

[0030] The beneficial effects of the embodiments of the present invention include, for example:

[0031] The embodiment of the present invention provides an element for realizing 3D sensing in a single Hall region, wherein a buffer layer and a functional layer are sequentially arranged on a substrate to complete the preparation of a Hall chip, and then a sensing layer is formed on the functional layer, the sensing layer is a centrally symmetrical structure, and then a plurality of electrodes are arranged on the sensing layer, the plurality of electrodes are centrally symmetrically distributed, and finally a magnetic core is arranged on the sensing layer, wherein the cross section of the magnetic core is also a symmetrical structure, and the projection center of the magnetic core on the sensing layer overlaps with the geometric center of the plurality of electrodes, and the projection of the magnetic core on the sensing layer overlaps with at least part of the electrodes. Compared with the prior art, the present invention has a compact structure, can effectively save space, realizes the packaging of a micro-Hall element, utilizes a single planar Hall structure combined with a magnetic core to form a 3D structure, does not require the deposition of a thicker magnetic layer, is compatible with conventional planar processes, reduces the difficulty and cost of production, and the present invention has high symmetry in design, good sensing performance, high directional uniformity, extremely convenient and simple calibration, and the output voltage has high linearity in three directions. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0033] Figure 1 A schematic diagram of the structure of a component for implementing 3D sensing in a single Hall region at a first viewing angle provided by the first embodiment of the present invention;

[0034] Figure 2 for Figure 1 A partial enlarged schematic diagram of middle Ⅱ;

[0035] Figure 3 A schematic diagram of the structure of a component for implementing 3D sensing in a single Hall region provided in the first embodiment of the present invention at a second viewing angle;

[0036] Figure 4 A schematic diagram of electrode distribution of an element for implementing 3D sensing in a single Hall region provided in the first embodiment of the present invention;

[0037] Figures 5 to 8 A flow chart of manufacturing a component for realizing 3D sensing in a single Hall region provided in the first embodiment of the present invention;

[0038] Fig. 9 A schematic diagram of the structure of a component for implementing 3D sensing in a single Hall region provided in a second embodiment of the present invention;

[0039] Fig.10A schematic diagram of electrode distribution of an element for implementing 3D sensing in a single Hall region provided in a second embodiment of the present invention;

[0040] Fig.11 A schematic diagram of electrode distribution of an element for implementing 3D sensing in a single Hall region provided in a third embodiment of the present invention;

[0041] Fig.12 A schematic structural diagram of a component for implementing 3D sensing in a single Hall region provided in a third embodiment of the present invention;

[0042] Fig.13 A schematic diagram of electrode distribution of an element for implementing 3D sensing in a single Hall region provided in a fourth embodiment of the present invention;

[0043] Fig.14 A schematic structural diagram of a component for implementing 3D sensing in a single Hall region provided in a fourth embodiment of the present invention;

[0044] Fig.15 A schematic structural diagram of a positioning column in a component for implementing 3D sensing in a single Hall region provided in a fifth embodiment of the present invention;

[0045] Fig.16 A schematic structural diagram of a component for implementing 3D sensing in a single Hall region provided in a fifth embodiment of the present invention;

[0046] Fig.17 A schematic structural diagram of a component for implementing 3D sensing in a single Hall region provided in a sixth embodiment of the present invention.

[0047] Icon: 100-element for realizing 3D sensing in a single Hall region; 110-substrate; 120-buffer layer; 130-functional layer; 140-sensing layer; 150-magnetic core; 150a-glue layer; 151-positioning column; 153-photoresist substrate; 160-electrode; 161-first metal electrode layer; 163-second metal electrode layer; 165-passivation layer; 167-passivation opening; 170a-input electrode; 170b-output electrode; 180-first sensing electrode; 190-second sensing electrode. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0049] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0051] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0052] In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.

[0053] As disclosed in the background technology, the prior art uses planar Hall elements to implement 3D magnetic field detection, mostly through multiple planar Hall elements and magnetic cores, which are placed at different positions and angles. Due to the design of planar structure combined with magnetic concentration, the sensing range and sensitivity of planar elements that implement 3D sensing in a single Hall area are subject to certain limitations, and will be affected by the position, size and shape of the magnetic core. This structure makes the magnetic field distribution in the sensing area uneven, resulting in weaker sensing signals at certain angles, affecting the performance and stability of the element. At the same time, the sensitivity of the element is greatly affected by the assembly position of the magnetic core, which brings about the problem of poor product consistency.

[0054] In order to solve the above problems, an embodiment of the present invention provides a novel element for realizing 3D sensing in a single Hall region. It should be noted that the features in the embodiments of the present invention can be combined with each other without conflict.

[0055] First embodiment

[0056] See also Figures 1 to 4The embodiment of the present invention provides a component 100 for realizing 3D sensing in a single Hall region, which can realize 3D magnetic field detection through a single Hall element and a single magnetic core 150, and has a simple structure, simple calibration, and high component volume utilization. In addition, its preparation process is compatible with conventional planar Hall processes, has a basis for large-scale production, and greatly reduces the cost and process difficulty. At the same time, calibration is simple, and detection in all directions is accurate. In addition, the component volume utilization is high and can be miniaturized.

[0057] The element 100 for realizing 3D sensing in a single Hall region provided in this embodiment includes a substrate 110, a buffer layer 120, a functional layer 130, a sensing layer 140, a magnetic core 150 and two groups of electrodes 160. The buffer layer 120 is arranged on the substrate 110; the functional layer 130 is arranged on the buffer layer 120; the sensing layer 140 is formed on the functional layer 130 and has a central symmetrical structure; the two groups of electrodes 160 are arranged on the sensing layer 140, and the two groups of electrodes 160 respectively include at least 4 electrodes distributed along the same circumference. The electrodes 160 are arranged in a staggered manner in the circumferential direction and are distributed symmetrically. Preferably, the two groups of electrodes 160 are distributed at 45 degrees. The magnetic core 150 is arranged on the induction layer 140. The cross section of the magnetic core 150 is symmetrical, and the projection center of the magnetic core 150 on the induction layer 140 overlaps with the geometric distribution center of the multiple electrodes 160. The projection of the magnetic core 150 on the induction layer 140 overlaps at least partially with some of the electrodes 160. Cured glue is also arranged between the magnetic core 150 and the electrode 160 to form a glue layer 150a, which can play a role of protection and insulation.

[0058] It should be noted that the functional layer 130 in this embodiment can be a semiconductor epitaxial wafer, wherein the buffer layer 120 and the functional layer 130 can be epitaxially grown on the substrate 110 in sequence, and the mesa is etched, passivated, and the passivation opening 167 is performed in sequence through photolithography and etching processes, and then the Hall chip structure is obtained through photolithography, evaporation, and annealing processes, wherein the construction and preparation principle of the Hall chip structure part are consistent with conventional Hall chips, and no further introduction is given here. The substrate 110 can be a compound semiconductor substrate 110 based on semiconductor materials, such as GaAs, SiC and other materials, and the carrier concentration of the substrate 110 should be lower than 1E-15 / cm 3 Even lower, the doping of the functional layer 130 can be adjusted according to the application requirements. There are three general methods for forming the functional layer 130. For example, a diffusion process can be used to immerse impurities such as Si, Sn, S, Ge or C into the substrate 110 and activate them by heating. It can also be grown on the substrate 110 by MOCVD (metal organic chemical vapor deposition) method or MBE (molecular beam epitaxy) method.

[0059] After the functional layer 130 is prepared, the sensing mesa can be obtained by etching, such as Figure 5 , wherein the sensing layer 140 is a semiconductor layer having a lower resistance than the substrate 110 , wherein the shape of the sensing layer 140 may be circular, rectangular or polygonal, and there are generally two etching methods, dry etching or wet etching.

[0060] Please continue to see Figure 2 It is worth noting that the multiple electrodes 160 are all metal-semiconductor electrodes 160, which can be 8 electrodes 160, each electrode 160 includes a first metal electrode layer 161 and a second metal electrode layer 163, the first metal electrode layer 161 is arranged on the sensing layer 140, and forms an ohmic contact with the sensing layer 140, and a passivation layer 165 is also arranged on the sensing layer 140, and a passivation opening 167 is formed by opening the passivation layer 165, and the passivation opening 167 corresponds to the first metal electrode layer 161 and partially exposes the first metal electrode layer 161, and the second metal electrode layer 163 covers the passivation opening 167 and is connected to the first metal electrode layer 161.

[0061] In other preferred embodiments, each electrode 160 may also include only the first metal electrode layer 161, and the second metal electrode layer 163 may be selected as needed. When the second metal electrode layer 163 is not needed, wire bonding may be performed directly after the opening.

[0062] After the sensing layer 140 is prepared, the first metal evaporation can be performed to form eight first metal electrode layers 161, such as Figure 6 , wherein the first metal electrode layer 161 and the sensing layer 140 form a metal-semiconductor contact region, and the patterns and positions of the eight first metal electrode layers 161 need to have a high degree of central symmetry, so as to avoid excessive voltage caused by imbalance, and at the same time improve the accuracy of three-dimensional sensing of magnetic fields in different directions. After the first metal evaporation is completed, passivation and opening can be performed. The passivation layer 165 covers the entire sensing layer 140 and the first metal electrode layer 161, and extends to the outside of the edge of the sensing layer 140 to enhance reliability. Then, an opening is made on the passivation layer 165 to expose the first metal electrode layer 161. The passivation opening 167 is located in the region of the eight first metal electrode layers 161, and the size of the passivation opening 167 is slightly smaller than the region of the first metal electrode layer 161, so as to ensure that the passivation layer 165 can completely cover the sensing layer 140, such as Figure 7 Then, a second metal evaporation is performed to form a second metal electrode layer 163, which can be connected to the metal-semiconductor electrode 160 and can be used for wire bonding. Then, a layer of glue 150a is applied. The glue layer 150a is the area where the magnetic core needs to be mounted, such as Figure 8 Finally, the assembly of the magnetic core 150 is completed, as shown in FIG. Figure 3 .

[0063] Please continue to see Figure 1 and Figure 2 In this embodiment, the passivation layer 165 covers the sensing layer 140, and the edge of the passivation layer 165 extends outward by at least 5 μm relative to the edge of the sensing layer 140. Specifically, when the passivation layer 165 is prepared, the passivation layer 165 completely covers the sensing layer 140 and extends outward by at least 5 μm, thereby enhancing reliability and ensuring the coverage effect of the passivation layer 165.

[0064] In this embodiment, the width of the passivation opening 167 is smaller than the width of the first metal electrode layer 161, and the passivation opening 167 is spaced apart from the edge of the first metal electrode layer 161. Specifically, the opening size of the passivation opening 167 is slightly smaller than the size of the first metal electrode layer 161, and preferably, the distance between the edge of the passivation opening 167 and the edge of the first metal electrode layer 161 is greater than or equal to 2 μm, so as to ensure that the passivation layer 165 can completely cover the sensing layer 140.

[0065] It should be noted that in this embodiment, the shape of the first metal electrode layer 161 can be circular, so that the passivation opening 167 is also circular, and the second metal electrode layer 163 can be rectangular, and the width of the second metal electrode layer 163 is greater than the width of the first metal electrode layer 161, which is convenient for subsequent wire bonding.

[0066] Please continue to see Figure 3 and Figure 4 In this embodiment, the plurality of electrodes 160 are divided into two input electrodes 170a, two output electrodes 170b and four first sensing electrodes 180. The two input electrodes 170a and the two output electrodes 170b are respectively arranged in a central symmetric manner, and the connection line between the two input electrodes 170a is orthogonal to the connection line between the two output electrodes 170b. Specifically, the two input electrodes 170a, the two output electrodes 170b and the four first sensing electrodes 180 are symmetric with respect to the center of the sensing layer 140 and the connection lines are orthogonal, and the four first sensing electrodes 180 are stacked in pairs and the connection lines are orthogonal. The shape of each electrode 160 is not specifically limited, but must ensure mutual central symmetry.

[0067] Preferably, in this embodiment, the four first sensing electrodes 180 are distributed along the rectangle and are arranged at the vertices of the rectangle, the two input electrodes 170a are respectively arranged on two opposite sides of the rectangle, and the two output electrodes 170b are respectively arranged on the other two opposite sides of the rectangle. Specifically, the four first sensing electrodes 180 are distributed along the four vertices of the square, and at the same time, the two input electrodes 170a and the two output electrodes 170b are respectively located at the midpoints of the four sides, and the input electrode 170a is located at the midpoint of two opposite sides, and the output electrode 170b is located at the midpoint of two opposite sides. For specific distribution, please refer to Figure 4 .

[0068] It should be noted that, in this embodiment, the distribution arrangement of the input electrode 170 a , the output electrode 170 b , and the first sensing electrode 180 all refers to the position distribution of the center point of the electrode 160 .

[0069] In this embodiment, the output data of the Hall voltage at the sensing end of the element can be obtained through the Hall effect and the magnetic focusing effect of the paramagnet. The two input electrodes 170a of the Hall element simultaneously output current / voltage, while the two output electrodes 170b are grounded. Figure 4 Distribution, the points are V1, V2, V3 and V4 respectively.

[0070] In this embodiment, the sensing layer 140 is in a truncated cone shape, the two input electrodes 170a are both driven by constant current / constant voltage, the input resistance can be adjusted by doping, and the distance between the magnetic core 150 and the surface of the sensing layer 140 is less than or equal to 100 μm, thereby ensuring good sensitivity in the x and y directions.

[0071] The separation of three-dimensional magnetic field is obtained by measuring V1, V2, V3 and V4. The sensitivity in the x direction is VHx=V1-V2-V3+V4, the sensitivity in the y direction is VHy=V1+V2-V3-V4, and the sensitivity in the z direction is VHz=V1-V2+V3-V4. The data under the specific magnetic induction intensity (B0) is used for calibration, that is, the magnetic induction intensity Bx=B0×(V1-V2-V3+V4) / VHx(B0); this is basically consistent with the typical Hall element induced magnetic field calculation method. Similarly, in the Z direction, Bz=B0×((V1-V2+V3-V4)) / VHz(B0), where VHx(B0) and VHz(B0) are the Hall voltages in the x and z directions under the specific magnetic induction intensity. V12 and V34 are antisymmetric output voltages. The difference between the two can isolate the magnetic field in the y direction. V12 alone does not meet the isolation condition.

[0072] In this embodiment, secondary metal evaporation is performed after the passivation opening 167 to form the second metal electrode layer 163 , which can enlarge the wiring area, thereby realizing application in small and micro components and helping to improve the signal-to-noise ratio.

[0073] In this embodiment, the relative magnetic permeability of the magnetic core 150 is greater than 100. Therefore, this embodiment has good linearity in three directions.

[0074] Please refer to the mechanical Figure 1 and Figure 3 In this embodiment, the cross section of the magnetic core 150 is circular, annular or regular polygonal. Preferably, in this embodiment, the magnetic core 150 is cylindrical in shape, has the highest symmetry, and has no height limit, for example, it can be 80μm, and in order to ensure the magnetic focusing effect, the radius of the magnetic core 150 here does not exceed the width of the induction layer 140, and is not less than 20% of the width of the induction layer 140. Preferably, the radius of the magnetic core 150 here can be 60% of the width of the induction layer 140. Of course, the magnetic core 150 here can also be a regular polygon, and the number of sides is a multiple of 4, so as to have better performance.

[0075] It should be noted that the element 100 for realizing 3D sensing in a single Hall region provided in this embodiment can reduce costs and process difficulties. Compared with the existing 3D Hall solutions, this embodiment is compact in design, can effectively save space, and has the advantage of low cost. The epitaxial growth, photolithography, etching and other processes in the preparation process are compatible with the processes of conventional planar Hall sensors, and the production difficulty is lower. And through the compact design of the second metal electrode layer 163, it is possible to take into account the wiring and realize the packaging of micro Hall elements. In addition, due to the poor integration and symmetry of the traditional 3D Hall solution, there are problems such as calibration in all three directions and uneven drift with temperature and time. In this embodiment, because it is concentrated in the same Hall functional area, the design has high symmetry, which greatly improves the directional uniformity, and the calibration is extremely convenient and simple. At the same time, the use of differential algorithms eliminates problems such as drift. Moreover, this embodiment has ultra-high symmetry. Compared with other 3D Hall devices, this embodiment has high linearity in the three directions of its output voltage.

[0076] In summary, the element 100 for realizing 3D sensing in a single Hall region provided in this embodiment is composed of a buffer layer 120 and a functional layer 130 sequentially arranged on a substrate 110 to complete the preparation of a Hall chip, and then a sensing layer 140 is formed on the functional layer 130, wherein the sensing layer 140 has a centrally symmetrical structure, and then a plurality of electrodes 160 are arranged on the sensing layer 140, wherein the plurality of electrodes 160 are centrally symmetrically distributed, and finally a magnetic core 150 is arranged on the sensing layer 140, wherein the cross section of the magnetic core 150 also has a symmetrical structure, and the projection center of the magnetic core 150 on the sensing layer 140 overlaps with the geometric center of the plurality of electrodes 160, and the projection of the magnetic core 150 on the sensing layer 140 at least partially overlaps with some of the electrodes 160. Compared with the prior art, the present invention has a compact structure, can effectively save space, realize the packaging of micro-Hall elements, and utilizes a single planar Hall structure combined with a magnetic core to form a 3D structure. There is no need to deposit a thicker magnetic layer, and it is compatible with conventional planar processes, reducing production difficulty and cost. The present invention has high symmetry in design, good sensing performance, high directional uniformity, extremely convenient and simple calibration, and the output voltage has high linearity in three directions.

[0077] Second embodiment

[0078] See also Fig. 9 and Fig.10 This embodiment provides another element 100 for realizing 3D sensing in a single Hall region. Its basic structure, principle and technical effects are the same as those of the first embodiment. For the sake of brief description, for parts not mentioned in this embodiment, reference may be made to the corresponding contents in the first embodiment. The difference between this embodiment and the first embodiment is that the distribution of the multiple electrodes 160 is different.

[0079] In this embodiment, the two input electrodes 170a and the two output electrodes 170b are distributed along the rectangle and are respectively arranged at the four vertices of the rectangle, and the four first sensing electrodes 180 are respectively arranged on the four sides of the rectangle. Specifically, the two input electrodes 170a and the two output electrodes 170b are located at the four vertices of the rectangle, and the four first sensing electrodes 180 are arranged at the center of the four sides of the rectangle. This arrangement can make the first sensing electrodes 180 closer to the center of the sensing layer 140.

[0080] It should be noted that, in this embodiment, the projection of the magnetic core 150 on the sensing layer 140 overlaps with the projection of the four first sensing electrodes 180, but can be separated from the two input electrodes 170a and the two output electrodes 170b. In this case, the volume of the magnetic core 150 can be designed to be smaller and achieve the same magnetic deflection effect as the first embodiment.

[0081] Third embodiment

[0082] See also Fig.11 and Fig.12 This embodiment provides another element 100 for realizing 3D sensing in a single Hall region. Its basic structure, principle and technical effects are the same as those of the first embodiment. For the sake of brief description, for parts not mentioned in this embodiment, reference may be made to the corresponding contents in the first embodiment. The difference between this embodiment and the first embodiment is that the distribution of the multiple electrodes 160 is different.

[0083] In this embodiment, the eight electrodes 160 are evenly distributed along the same circumference and present a completely centrally symmetrical structure. Specifically, the two input electrodes 170a, the two output electrodes 170b and the four first sensing electrodes 180 are staggeredly distributed on the same circumference, that is, the two input electrodes 170a and the two output electrodes 170b are distributed in a rectangular shape, and the four first sensing electrodes 180 are also distributed in a rectangular shape. The connection line of the two input electrodes 170a and the connection line of the two output electrodes 170b are orthogonal, and are correspondingly arranged along the diameter direction of the circumference.

[0084] It should be noted that in this embodiment, the multiple electrodes 160 can present a completely centrally symmetrical structure, and the magnetic core 150 is set at the center position, which can achieve better magnetic field detection performance. In addition, compared with the first embodiment or the second embodiment, this embodiment has higher input and output resistance and sensitivity under the same epitaxial doping conditions.

[0085] In this embodiment, the distance between any one of the two input electrodes 170a, the two output electrodes 170b and the four first sensing electrodes 180 and the edge of the sensing layer 140 is greater than or equal to 5 μm. Specifically, it means that the distance between the first metal electrode 160 and the edge of the sensing layer 140 is greater than or equal to 5 μm, and the positional relationship between the second metal electrode 160 and the sensing layer 140 is not limited because it needs to be wired later.

[0086] The current distribution and magnetic field signal output of the structure are described in detail below:

[0087] When only the X-direction magnetic field (horizontally rightward magnetic field Bx in the figure) is applied, due to the magnetization of the magnetic core 150, a vertical magnetic field (i.e., a Z-direction magnetic field) will be generated on the surface of the induction layer 140. Among them, the left half (the area where V1 and V2 are located) is a vertically upward magnetic field, and the right half (the area where V3 and V4 are located) is a vertically downward magnetic field. Therefore, after the X-direction magnetic field Bx is applied, the potential of V1-V4 changes as follows:

[0088]

[0089] Due to the central symmetry, the amplitude of potential change is also symmetrical.

[0090] Right now:

[0091] VHx=V1-V2-V3+V4=V12-V34∝Bx;

[0092] VHy=V1+V2-V3-V4=V23-V41∝By=0;

[0093] VHz=V1-V2+V3-V4=V23+V41∝Bz=0;

[0094] Similarly, when only the positive y-direction magnetic field (the upward magnetic field By in the figure) is applied, a vertical magnetic field (z-direction magnetic field) will be generated on the surface of the sensing area. Among them, the upper half (the area where V2 and V3 are located) is a vertical downward magnetic field, and the lower half (the area where V4 and V1 are located) is a vertical downward magnetic field. Therefore, after the magnetic field By is applied, the potential of V1-V4 changes as follows:

[0095]

[0096] Right now:

[0097] VHx=V1-V2-V3+V4=V12-V34∝Bx=0;

[0098] VHy=V1+V2-V3-V4=V23-V41∝By;

[0099] VHz=V1-V2+V3-V4=V23+V41∝Bz=0;

[0100] Similarly, when a magnetic field (Bz) is applied upward only to the vertical element, an upward magnetic field will exist in the entire sensing area, and the potential changes of V1-V4 are as follows:

[0101]

[0102] Right now:

[0103] VHx=V1-V2-V3+V4=V12-V34∝Bx=0;

[0104] VHy=V1+V2-V3-V4=V23-V41∝By=0;

[0105] VHz=V1-V2+V3-V4=V23+V41∝Bz;

[0106] Due to the symmetry of the structure and the vector nature of the magnetic field, the projection components of the magnetic field in any direction on the three coordinate axes will be independently calculated by the above three differential formulas, and they do not affect each other. Example: The following are 8 sets of magnetic fields, their projection components on x, y, z and the VH of the element induction output are as follows.

[0107]

[0108] Among them, under the same magnetic field in all directions, the sensitivity of VHx and VHy is smaller than that of VHz, which is related to the specific thickness and shape of the magnet. The data comes from Fig.11 The samples shown are similar to those in the previous embodiments.

[0109] Fourth embodiment

[0110] See also Fig.13 and Fig.14 This embodiment provides another element 100 for realizing 3D sensing in a single Hall region. Its basic structure, principle and technical effects are the same as those of the first embodiment. For the sake of brief description, for parts not mentioned in this embodiment, reference may be made to the corresponding contents in the third embodiment. The difference between this embodiment and the third embodiment is that the composition and distribution of the multiple electrodes 160 are different.

[0111] In this embodiment, two input electrodes 170 a, two output electrodes 170 b and four first sensing electrodes 180 are staggered and distributed on the same circumference. The multiple electrodes 160 also include four second sensing electrodes 190 . The four second sensing electrodes 190 are distributed in a rectangular shape at the center of the circumference. The magnetic core 150 is set on the four second sensing electrodes 190 .

[0112] It should be noted that, compared with the third embodiment, this embodiment has four additional second sensing electrodes 190 , which are located at the edge or inner side of the magnetic core 150 , and the accuracy is improved through multiple sets of output operations.

[0113] In this embodiment, the influence of the assembly of the magnetic core 150 can be reduced by further differential algorithms. For example, the four added second sensing electrodes 190 are set to V5, V6, V7, and V8. When the configured magnetic core 150 is not located at the center and a deviation occurs, the changes of V12-V34 and V56-V78 will be opposite, that is, VHx=V12-V34+k(V56-V78) can be used, which can effectively reduce the influence of the assembly error of the magnetic core, where k is a constant used for calibration; the calibration constant k can be obtained by the formula, that is, k=-(V12-V34) / (V56-V78).

[0114] It should be noted that the structure of the second sensing electrode 190 is the same as that of the first sensing electrode 180 , and during preparation, the magnetic core 150 may correspond to the four second sensing electrodes 190 to further reduce the volume of the magnetic core 150 .

[0115] Fifth embodiment

[0116] See also Fig.15 and Fig.16 This embodiment provides another element 100 for realizing 3D sensing in a single Hall region. Its basic structure, principle and technical effects are the same as those of the first embodiment. For the sake of brief description, for the parts not mentioned in this embodiment, reference may be made to the corresponding contents in the first embodiment. The difference between this embodiment and the first embodiment is that a positioning column 151 is added.

[0117] In this embodiment, four positioning posts 151 are further provided on the sensing layer 140, and the four positioning posts 151 are distributed in a rectangular shape at the center of the four first sensing electrodes 180, and the magnetic core 150 is provided on the four positioning posts 151. Specifically, the four positioning posts 151 are distributed on the surface of the sensing layer 140 along the inner rectangle, and are respectively located at the four vertex corners of the inner rectangle. Meanwhile, the four first sensing electrodes 180 are distributed along the outer rectangle, and are respectively located at the four vertex corners of the outer rectangle. The centers of the inner rectangle and the outer rectangle overlap, and correspond to the center of the magnetic core 150.

[0118] It should be noted that, in this embodiment, the positioning column 151 can be formed by photolithography and metal electroplating or evaporation. Specifically, photoresist can be coated on the sensing layer 140, and four photoresist substrates 153 can be formed after patterning. Then, the positioning column 151 is formed on the four photoresist substrates 153 by metal electroplating or evaporation. The positioning column 151 is a metal column.

[0119] In this embodiment, the magnetic core 150 is spherical, and the distance between two adjacent positioning posts 151 is less than 20% of the radius of the magnetic core 150. Specifically, the magnetic core 150 adopts a spherical structure, which further improves its symmetry and reduces the difficulty of installation. Among them, the distance between two adjacent positioning posts 151 is less than 20% of the spherical radius, which can ensure the support effect while avoiding the positioning posts 151 from being too small and causing unstable support.

[0120] It is worth noting that in this embodiment, by adding the positioning column 151 and the magnetic core 150 being spherical, the assembly error can be reduced and the overall symmetry can be ensured.

[0121] Sixth embodiment

[0122] See also Fig.17 This embodiment provides another element 100 for realizing 3D sensing in a single Hall region. Its basic structure, principle and technical effects are the same as those of the first embodiment. For the sake of brief description, for the parts not mentioned in this embodiment, reference can be made to the corresponding contents in the first embodiment. The difference between this embodiment and the first embodiment lies in the shape of the magnetic core 150.

[0123] In this embodiment, the magnetic core 150 is in the shape of a ring cylinder, and the inner diameter of the magnetic core 150 is less than or equal to half of the outer diameter of the magnetic core 150. The magnetic core 150 is designed to be ring-shaped, and the inner ring radius can be used for positioning during photolithography and attachment of the magnetic core 150 to ensure assembly accuracy. At the same time, the inner ring radius does not exceed 50% of the outer ring radius, which will not affect the deflection effect of the magnetic core 150.

[0124] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A component for realizing 3D sensing in a single Hall region, characterized in that: include: substrate; a buffer layer disposed on the substrate; A functional layer disposed on the buffer layer; A sensing layer formed on the functional layer and having a centrally symmetrical structure; A plurality of electrodes are arranged on the sensing layer, wherein the plurality of electrodes are divided into two input electrodes, two output electrodes, four first sensing electrodes and four second sensing electrodes, and the two input electrodes, the two output electrodes and the four first sensing electrodes are staggered and distributed on the same circumference and are centrally symmetrically distributed; and a magnetic core disposed on the induction layer; The magnetic core has a symmetrical structure, and the projection center of the magnetic core on the induction layer overlaps with the distribution center of the plurality of electrodes; The projection of the magnetic core on the sensing layer at least partially overlaps with some of the electrodes, so that the planar Hall structure is combined with the magnetic core to form a 3D structure; The four second induction electrodes are distributed in a rectangular shape at the center of the circle, and the magnetic concentrating core is arranged on the four second induction electrodes.

2. The element for realizing 3D sensing in a single Hall region according to claim 1, characterized in that: Each of the electrodes includes a first metal electrode layer, which is arranged on the sensing layer and forms an ohmic contact with the sensing layer. A passivation layer is also arranged on the sensing layer, and a passivation opening is formed by opening a hole in the passivation layer. The passivation opening corresponds to the first metal electrode layer and partially exposes the first metal electrode layer.

3. The element for realizing 3D sensing with a single Hall region according to claim 2, characterized in that: Each of the electrodes further includes a second metal electrode layer, which covers the passivation opening and is connected to the first metal electrode layer.

4. The element for realizing 3D sensing in a single Hall region according to claim 2, characterized in that: The magnetic core is in the shape of a column or a sphere, and the cross section of the magnetic core is in the shape of a circle, a ring or a regular polygon.

5. The element for realizing 3D sensing in a single Hall region according to claim 2, characterized in that: The passivation layer covers the sensing layer, and an edge of the passivation layer extends outward by at least 5 μm relative to an edge of the sensing layer.

6. The element for realizing 3D sensing in a single Hall region according to claim 2, characterized in that: The width of the passivation opening is smaller than the width of the first metal electrode layer, and the passivation opening is spaced apart from an edge of the first metal electrode layer.

7. The element for realizing 3D sensing in a single Hall region according to claim 6, characterized in that: A distance between an edge of the passivation opening and an edge of the first metal electrode layer is greater than or equal to 2 μm.

8. The element for realizing 3D sensing in a single Hall region according to claim 1, characterized in that: The relative magnetic permeability of the magnetic core is greater than 100.

9. The element for realizing 3D sensing in a single Hall region according to claim 1, characterized in that: A distance between any one of the two input electrodes, the two output electrodes and the four first sensing electrodes and an edge of the sensing layer is greater than or equal to 5 μm.

10. The element for realizing 3D sensing in a single Hall region according to claim 1, characterized in that: Four positioning posts are also arranged on the induction layer. The four positioning posts are distributed in a rectangular shape at the centers of the four first induction electrodes. The magnetic core is arranged on the four positioning posts.

11. The element for realizing 3D sensing in a single Hall region according to claim 10, characterized in that: The magnetic core is spherical, and the distance between two adjacent positioning posts is less than 20% of the radius of the magnetic core.

12. The element for realizing 3D sensing in a single Hall region according to claim 10, characterized in that: The magnetic core is in the shape of a ring cylinder, and the inner diameter of the magnetic core is less than or equal to half of the outer diameter of the magnetic core.

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